Feedback system and feedback method

Abstract

Embodiments of the present disclosure provide a feedback system and a feedback method. The feedback system comprises: a marking unit, marking photoresists by batches; an identification unit, obtaining parameters of the photoresists of the current marking when the marking of the photoresists changes during wafer production; a comparison unit, comparing the parameters of the photoresists of the current marking with preset photoresist parameters; and an execution unit, adjusting exposure parameters during production of the photoresists of the current marking when the parameters of the photoresists of the current marking are out of the range of the preset photoresist parameters. The above technical solution marks the photoresists by batches, obtains the parameters of the photoresists of the current marking, compares the parameters of the photoresists of the current marking with the preset photoresist parameters, and adjusts the exposure parameters during production of the photoresists of the current marking, so as to automatically adjust accurate exposure parameters during the photoetching process.

Description

Technical Field

[0001] This application relates to the field of semiconductor lithography, and more particularly to a feedback system and feedback method. Background Technology

[0002] In semiconductor manufacturing, photolithography is typically used to define patterns on the wafer surface and dielectric layer, and then semiconductor devices are manufactured through pattern transfer. During pattern definition, the target critical dimensions are calculated in advance based on the desired pattern. However, because different batches of photoresist have varying photoresist strengths, the critical dimensions of the pattern formed after exposure differ from the calculated target critical dimensions when the photoresist is changed, ultimately affecting the yield of semiconductor devices.

[0003] Therefore, providing a method that can accurately adjust or reset exposure parameters is a technical problem that needs to be solved. Summary of the Invention

[0004] The technical problem to be solved by this disclosure is to provide a feedback system and feedback method that can accurately adjust or reset exposure parameters during the photolithography process.

[0005] To address the aforementioned issues, this disclosure provides a feedback system comprising: a marking unit for marking photoresist batch by batch; an identification unit for acquiring parameters of the currently marked photoresist when the marking changes during wafer production; a comparison unit for comparing the parameters of the currently marked photoresist with preset photoresist parameters; and an execution unit for adjusting the exposure parameters of the currently marked photoresist during production when the parameters of the currently marked photoresist are outside the range of the preset photoresist parameters.

[0006] In some embodiments, obtaining the parameters of the photoresist currently marked includes obtaining the key dimension parameters of the pattern formed using the photoresist currently marked as a mask.

[0007] In some embodiments, the feedback system further includes: when the parameters of the currently marked photoresist are within the preset photoresist parameter range, the execution unit does not change the exposure parameters during the production of the currently marked photoresist.

[0008] In some embodiments, not changing the exposure parameters during the production of the photoresist of the current label includes: using the exposure parameters during the production of the photoresist of the previous label as the standard for the exposure parameters during the production of the photoresist of the current label.

[0009] In some embodiments, the feedback system further includes: comparing the key dimension parameters of the pattern formed using the currently marked photoresist as a mask with a preset target key dimension; and adjusting the exposure parameters during the production of the currently marked photoresist when the key dimension parameters of the pattern formed using the currently marked photoresist as a mask are outside the range of the preset target key dimension.

[0010] In some embodiments, adjusting the exposure parameters during the production of the photoresist includes: adjusting the exposure parameters during the production of the currently marked photoresist based on the previously marked exposure parameters and calibration values ​​during the production of the photoresist.

[0011] In some embodiments, the feedback system includes: dividing the currently marked photoresist into N batches, where N is an integer greater than or equal to 0; adjusting the exposure parameters of the first batch of photoresist based on the exposure parameters and calibration values ​​during the production of the previously marked photoresist; adjusting the exposure parameters of the second batch of photoresist based on the exposure parameters and calibration values ​​during the production of the currently marked first batch of photoresist; when N is greater than or equal to 3 and less than or equal to 6, adjusting the exposure parameters of the Nth batch of photoresist based on the average value and calibration value of the exposure parameters during the production of the photoresist of the N-1 batches preceding the current mark; when N is greater than or equal to 7, adjusting the exposure parameters of the Nth batch of photoresist based on the average value and calibration value of the exposure parameters during the production of the photoresist of the N-5th to N-1th batches preceding the current mark.

[0012] In some embodiments, the feedback system further includes: pre-storing the exposure parameters that match the preset photoresist parameters, and recalling the exposure parameters that match the preset photoresist parameters when the parameters of the currently marked photoresist are consistent with the preset photoresist parameters.

[0013] This disclosure also provides a feedback method, including: marking photoresist by batch; when the marking of the photoresist changes during wafer production, obtaining the parameters of the currently marked photoresist; comparing the parameters of the currently marked photoresist with preset photoresist parameters; and adjusting the exposure parameters of the currently marked photoresist during production when the parameters of the currently marked photoresist are outside the range of the preset photoresist parameters.

[0014] In some embodiments, obtaining the parameters of the photoresist currently marked includes obtaining the key dimension parameters of the pattern formed using the photoresist currently marked as a mask.

[0015] In some embodiments, the feedback system further includes: when the parameters of the currently marked photoresist are within the preset photoresist parameter range, the execution unit does not change the exposure parameters during the production of the currently marked photoresist.

[0016] In some embodiments, not changing the exposure parameters during the production of the photoresist of the current label includes: using the exposure parameters during the production of the photoresist of the previous label as the standard for the exposure parameters during the production of the photoresist of the current label.

[0017] In some embodiments, the feedback method further includes: comparing the key dimension parameters of the pattern formed using the currently marked photoresist as a mask with a preset target key dimension; and adjusting the exposure parameters during the production of the currently marked photoresist when the key dimension parameters of the pattern formed using the currently marked photoresist as a mask are outside the range of the preset target key dimension.

[0018] In some embodiments, adjusting the exposure parameters during the production of the photoresist includes: adjusting the exposure parameters during the production of the currently marked photoresist based on the previously marked exposure parameters and calibration values ​​during the production of the photoresist.

[0019] In some embodiments, the feedback method includes: dividing the currently marked photoresist into N batches, where N is an integer greater than or equal to 0; adjusting the exposure parameters of the first batch of photoresist based on the exposure parameters and calibration values ​​during the production of the previously marked photoresist; adjusting the exposure parameters of the second batch of photoresist based on the exposure parameters and calibration values ​​during the production of the currently marked first batch of photoresist; when N is greater than or equal to 3 and less than or equal to 6, adjusting the exposure parameters of the Nth batch of photoresist based on the average value and calibration value of the exposure parameters during the production of the photoresist of the N-1 batches preceding the current mark; when N is greater than or equal to 7, adjusting the exposure parameters of the Nth batch of photoresist based on the average value and calibration value of the exposure parameters during the production of the photoresist of the N-5th to N-1th batches preceding the current mark.

[0020] In some embodiments, the feedback method further includes: pre-storing the exposure parameters that match the preset photoresist parameters, and when the parameters of the currently marked photoresist are consistent with the preset photoresist parameters, calling the exposure parameters that match the preset photoresist parameters.

[0021] The above technical solution, by marking photoresist batch by batch, enables the acquisition of parameters for the currently marked photoresist when the marking changes during wafer fabrication. These parameters are then compared with preset photoresist parameters. If the parameters of the currently marked photoresist fall outside the preset range, the exposure parameters for that photoresist during production are adjusted. This achieves automatic and accurate adjustment of exposure parameters during the photolithography process.

[0022] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and are not intended to limit this disclosure. Techniques, methods, and apparatus known to those skilled in the art may not be discussed in detail, but where appropriate, such techniques, methods, and apparatus should be considered part of the specification. Attached Figure Description

[0023] Figure 1 This is a schematic diagram of a feedback system according to an embodiment of the present disclosure.

[0024] Figure 2 This is a schematic diagram of replacing the photoresist in one embodiment of the present disclosure.

[0025] Figure 3 This is a schematic diagram of adjusting exposure parameters in one embodiment of the present disclosure.

[0026] Figure 4 This is a schematic diagram of a feedback method in one embodiment of the present disclosure. Detailed Implementation

[0027] The following detailed description, in conjunction with the accompanying drawings, illustrates specific embodiments of the feedback system and feedback method provided in this disclosure. The following description of at least one exemplary embodiment is merely illustrative and is not intended to limit the scope of this disclosure or its application or use. That is, those skilled in the art will understand that they merely illustrate exemplary methods that can be used in real-time, and are not exhaustive. Furthermore, unless otherwise specifically stated, the relative arrangement of components and steps set forth in these embodiments does not limit the scope of this disclosure.

[0028] Figure 1 This is a schematic diagram of a feedback system according to an embodiment of this disclosure. Please refer to the following: Figure 1 The feedback system includes: a marking unit U1 for marking photoresist batch by batch; an identification unit U2 for acquiring the parameters of the currently marked photoresist when the marking changes during wafer production; a comparison unit U3 for comparing the parameters of the currently marked photoresist with preset photoresist parameters; and an execution unit U4 for adjusting the exposure parameters of the currently marked photoresist during production when the parameters of the currently marked photoresist are outside the range of the preset photoresist parameters.

[0029] Different batches of photoresist have different properties such as photosensitivity and resolution. In this embodiment, the feedback system marks the photoresist according to batch through the marking unit U1. In other embodiments, the batch of photoresist and the corresponding lithography parameters are associated and stored in the feedback system, so that the identification unit U2, comparison unit U3, and execution unit U4 can retrieve the stored data.

[0030] Please continue reading below. Figure 1 The feedback system obtains parameters of the currently marked photoresist through the identification unit U2, including acquiring key dimension parameters of the pattern formed using the currently marked photoresist as a mask. In other embodiments, the feedback system further obtains parameters of the currently marked photoresist through the identification unit U2, such as photosensitivity and resolution. This allows the comparison unit U3 to compare the parameters of the currently marked photoresist with the parameters of the previously marked photoresist or target parameters, thereby adjusting the exposure parameters in subsequent production processes and achieving automatic and accurate adjustment of exposure parameters during photolithography.

[0031] In this embodiment, the comparison unit U3 compares the key dimension parameters of the pattern formed using the currently marked photoresist as a mask, obtained by the identification unit U2, with a preset target key dimension. When the key dimension parameters of the pattern formed using the currently marked photoresist as a mask are outside the preset target key dimension range, the execution unit U4 adjusts the exposure parameters during photoresist production. For example, when the key dimension parameters of the pattern formed using the currently marked photoresist as a mask are outside the preset target key dimension range, the execution unit U4 adjusts the exposure parameters during photoresist production, such as the exposure source, light wavelength, and exposure time, so that the key dimension parameters of the pattern formed using the currently marked photoresist as a mask are within the target key dimension range.

[0032] In some embodiments, adjusting the exposure parameters during photoresist production includes adjusting the exposure parameters during the current photoresist production based on the exposure parameters and calibration values ​​from the previous batch of photoresist. For example, during production, the previous photoresist is exposed according to a set of exposure parameters, and the exposure parameters are calibrated based on the exposure results to obtain a calibration value. The exposure parameters and the obtained calibration value are then used in the current photoresist exposure process. In other embodiments, a modeling approach can be used to weight and optimize the exposure parameters and calibration values ​​from previous batches to obtain more accurate calibration values ​​for adjusting the exposure parameters during the current photoresist production.

[0033] In some embodiments, after the photoresist is replaced during production, the marking of the current photoresist changes, and the parameters of the currently marked photoresist are outside the preset photoresist parameter range. In this case, the currently marked photoresist is divided into N batches, where N is an integer greater than or equal to 0. The exposure parameters of the first batch of photoresist are adjusted based on the exposure parameters and calibration values ​​during the production of the previously marked photoresist. The exposure parameters of the second batch of photoresist are adjusted based on the exposure parameters and calibration values ​​during the production of the currently marked first batch of photoresist. When N is greater than or equal to 3 and less than or equal to 6, the exposure parameters of the Nth batch of photoresist are adjusted based on the average exposure parameters and calibration values ​​of the photoresist produced in the N-1 batches prior to the current marking. For example, when N equals 6, the exposure parameters of the 6th batch of photoresist are adjusted based on the average exposure parameters and calibration values ​​during the production of the currently marked batches 1 to 5. When N is greater than or equal to 7, the exposure parameters of the Nth batch of photoresist are adjusted based on the average exposure parameters and calibration values ​​during the production of the currently marked batches N-5 to N-1. For example, when N equals 8, the exposure parameters of the 8th batch of photoresist are adjusted based on the average and calibration values ​​of the exposure parameters during the production of the current batches 3 to 7 of the photoresist. In this embodiment, the maximum number of batches on which the adjustment of the exposure parameters is based is 5 batches. In other embodiments, the number of batches on which the adjustment of the exposure parameters is based may be other values.

[0034] Figure 2 This is a schematic diagram of replacing the photoresist in one embodiment of this disclosure. Please refer to the following: Figure 2 The following explanation uses five batches of wafers with the same photoresist marking as an example. Lot1 to Lot10 are wafers from the first to the tenth batches. Among them, Lot1 to Lot5 have photoresist 1 with the same marking, and Lot6 to Lot10 have photoresist 2 with the same marking. In this embodiment, after replacing photoresist 1 with photoresist 2, the marking of the current photoresist changes, and the parameters of the photoresist with the current marking are outside the preset photoresist parameter range. Therefore, the exposure parameters of the photoresist in Lot 6 are adjusted based on the exposure parameters and calibration values ​​of the photoresist produced in Lot 5. The exposure parameters of the photoresist in Lot 7 are adjusted based on the exposure parameters and calibration values ​​of the photoresist produced in Lot 6. The exposure parameters of the photoresist in Lot 8 are adjusted based on the average and calibration values ​​of the exposure parameters produced in Lot 6 and Lot 7. The exposure parameters of the photoresist in Lot 9 are adjusted based on the average and calibration values ​​of the exposure parameters produced in Lot 6, Lot 7, and Lot 8. The exposure parameters of the photoresist in Lot 10 are adjusted based on the average and calibration values ​​of the exposure parameters produced in Lot 6, Lot 7, Lot 8, and Lot 9. The exposure parameters of the photoresist in subsequent Lots are calibrated based on the average and calibration values ​​of the exposure parameters of the first 5 batches of photoresist with the same marking.

[0035] Figure 3 This is a schematic diagram illustrating the adjustment of exposure parameters in one embodiment of this disclosure. Please refer to the following: Figure 3 The steps for adjusting exposure parameters include: step S101, where the photoresist marking changes; step S102, obtaining the parameters of the currently marked photoresist; step S103, determining whether the parameters of the currently marked photoresist exceed the preset photoresist parameter range; when the photoresist parameters are within the preset photoresist parameter range, step S104 is executed, without changing the exposure parameters during photoresist production, and at this time, the exposure parameters during the production of the previously marked photoresist are used as the standard for producing the currently marked photoresist; when the photoresist parameters are outside the preset photoresist parameter range, step S105 is executed, adjusting the exposure parameters during the production of the currently marked photoresist.

[0036] In other embodiments, the feedback system pre-stores exposure parameters that match preset photoresist parameters. When the parameters of the currently marked photoresist match the preset photoresist parameters, the exposure parameters that match the preset photoresist parameters are retrieved. This reduces the number of times exposure parameters need to be readjusted during production, reduces the time spent setting exposure parameters during production, and improves production efficiency.

[0037] The above technical solution uses a marking unit U1 to mark photoresist batch by batch. During wafer fabrication, when the marking of the photoresist changes, the identification unit U2 can obtain the parameters of the currently marked photoresist and provide these parameters to the comparison unit U3. The comparison unit U3 compares the parameters of the currently marked photoresist with preset photoresist parameters. When the parameters of the currently marked photoresist are outside the preset photoresist parameter range, the execution unit U4 adjusts the exposure parameters for subsequent photoresist production based on pre-stored exposure parameters matching the preset photoresist parameters or the average and calibration values ​​of exposure parameters from some batches produced with the currently marked photoresist. When the photoresist parameters are within the preset photoresist parameter range, the exposure parameters from the production of the previously marked photoresist are used as the standard for producing the currently marked photoresist, thus achieving automatic and accurate adjustment of exposure parameters during the photolithography process. When the parameters of the currently marked photoresist are consistent with the preset photoresist parameters, the execution unit U4 calls the exposure parameters that match the preset photoresist parameters, reducing the number of times the exposure parameters need to be readjusted during the production process, reducing the time spent setting the exposure parameters during the production process, and improving production efficiency.

[0038] Figure 4 This is a schematic diagram of a feedback method according to an embodiment of this disclosure. Please refer to the following. Figure 4The feedback method includes: step S201, marking the photoresist by batch; step S202, when the marking of the photoresist changes during wafer production, obtaining the parameters of the currently marked photoresist; step S203, comparing the parameters of the currently marked photoresist with preset photoresist parameters; step S204, when the parameters of the currently marked photoresist are outside the range of the preset photoresist parameters, adjusting the exposure parameters of the currently marked photoresist during production.

[0039] Different batches of photoresist exhibit variations in photosensitivity, resolution, and other characteristics. In this embodiment, the photoresist is labeled according to batch, allowing for the comparison of the parameters of the currently labeled photoresist with preset photoresist parameters after obtaining the parameters of the currently labeled photoresist. In other embodiments, the batches of photoresist and the corresponding lithography parameters are associated and stored for easy retrieval in other steps or processes.

[0040] Please continue reading below. Figure 4 Step S202, when the markings on the photoresist change during wafer fabrication, involves obtaining the parameters of the currently marked photoresist, including: obtaining the key dimension parameters of the pattern formed using the currently marked photoresist as a mask. In other embodiments, obtaining the parameters of the currently marked photoresist further includes: obtaining parameters such as photosensitivity and resolution of the currently marked photoresist. This facilitates comparing the parameters of the currently marked photoresist with the parameters or target parameters of the previously marked photoresist, allowing for adjustments to the exposure parameters in subsequent production processes, and achieving automatic and accurate adjustment of exposure parameters during photolithography.

[0041] In this embodiment, the critical dimension parameters of the pattern formed using the currently marked photoresist as a mask are compared with a preset target critical dimension. When the critical dimension parameters of the pattern formed using the currently marked photoresist as a mask are outside the preset target critical dimension range, the exposure parameters during photoresist production are adjusted. For example, when the critical dimension parameters of the pattern formed using the currently marked photoresist as a mask are outside the preset target critical dimension range, the exposure parameters such as the exposure source, light wavelength, and exposure time during photoresist production are adjusted to bring the critical dimension parameters of the pattern formed using the currently marked photoresist as a mask within the target critical dimension range.

[0042] In some embodiments, adjusting the exposure parameters during photoresist production includes adjusting the exposure parameters during the current photoresist production based on the exposure parameters and calibration values ​​from the previous batch of photoresist. For example, during production, the previous photoresist is exposed according to a set of exposure parameters, and the exposure parameters are calibrated based on the exposure results to obtain a calibration value. The exposure parameters and the obtained calibration value are then used in the current photoresist exposure process. In other embodiments, a modeling approach can be used to weight and optimize the exposure parameters and calibration values ​​from previous batches to obtain more accurate calibration values ​​for adjusting the exposure parameters during the current photoresist production.

[0043] In some embodiments, after the photoresist is replaced during production, the marking of the current photoresist changes, and the parameters of the currently marked photoresist are outside the preset photoresist parameter range. In this case, the currently marked photoresist is divided into N batches, where N is an integer greater than or equal to 0. The exposure parameters of the first batch of photoresist are adjusted based on the exposure parameters and calibration values ​​during the production of the previously marked photoresist. The exposure parameters of the second batch of photoresist are adjusted based on the exposure parameters and calibration values ​​during the production of the currently marked first batch of photoresist. When N is greater than or equal to 3 and less than or equal to 6, the exposure parameters of the Nth batch of photoresist are adjusted based on the average exposure parameters and calibration values ​​of the photoresist produced in the N-1 batches prior to the current marking. For example, when N equals 6, the exposure parameters of the 6th batch of photoresist are adjusted based on the average exposure parameters and calibration values ​​during the production of the currently marked batches 1 to 5. When N is greater than or equal to 7, the exposure parameters of the Nth batch of photoresist are adjusted based on the average exposure parameters and calibration values ​​during the production of the currently marked batches N-5 to N-1. For example, when N equals 8, the exposure parameters of the 8th batch of photoresist are adjusted based on the average and calibration values ​​of the exposure parameters during the production of the current batches 3 to 7 of the photoresist. In this embodiment, the maximum number of batches on which the adjustment of the exposure parameters is based is 5 batches. In other embodiments, the number of batches on which the adjustment of the exposure parameters is based may be other values.

[0044] Figure 2 This is a schematic diagram of replacing the photoresist in one embodiment of this disclosure. Please refer to the following: Figure 2The following explanation uses five batches of wafers with the same photoresist marking as an example. Lot1 to Lot10 are wafers from the first to the tenth batches. Among them, Lot1 to Lot5 have photoresist 1 with the same marking, and Lot6 to Lot10 have photoresist 2 with the same marking. In this embodiment, after replacing photoresist 1 with photoresist 2, the marking of the current photoresist changes, and the parameters of the photoresist with the current marking are outside the preset photoresist parameter range. Therefore, the exposure parameters of the photoresist in Lot 6 are adjusted based on the exposure parameters and calibration values ​​of the photoresist produced in Lot 5. The exposure parameters of the photoresist in Lot 7 are adjusted based on the exposure parameters and calibration values ​​of the photoresist produced in Lot 6. The exposure parameters of the photoresist in Lot 8 are adjusted based on the average and calibration values ​​of the exposure parameters produced in Lot 6 and Lot 7. The exposure parameters of the photoresist in Lot 9 are adjusted based on the average and calibration values ​​of the exposure parameters produced in Lot 6, Lot 7, and Lot 8. The exposure parameters of the photoresist in Lot 10 are adjusted based on the average and calibration values ​​of the exposure parameters produced in Lot 6, Lot 7, Lot 8, and Lot 9. The exposure parameters of the photoresist in subsequent Lots are calibrated based on the average and calibration values ​​of the exposure parameters of the first 5 batches of photoresist with the same marking.

[0045] Figure 3 This is a schematic diagram illustrating the adjustment of exposure parameters in one embodiment of this disclosure. Please refer to the following: Figure 3 The adjustment of exposure parameters includes: step S101, the photoresist marking changes; step S102, obtaining the parameters of the currently marked photoresist; step S103, determining whether the parameters of the currently marked photoresist exceed a preset photoresist parameter range; when the parameters of the photoresist are within the preset photoresist parameter range, step S104 is executed, without changing the exposure parameters during the production of the photoresist, at this time, the exposure parameters during the production of the previously marked photoresist are used as the standard to produce the currently marked photoresist; when the parameters of the photoresist are outside the preset photoresist parameter range, step S105 is executed, adjusting the exposure parameters during the production of the currently marked photoresist.

[0046] In other embodiments, the feedback system pre-stores exposure parameters that match preset photoresist parameters. When the parameters of the currently marked photoresist match the preset photoresist parameters, the exposure parameters that match the preset photoresist parameters are retrieved. This reduces the number of times exposure parameters need to be readjusted during production, reduces the time spent setting exposure parameters during production, and improves production efficiency.

[0047] The above technical solution, through step S201, marks the photoresist batch by batch. During wafer fabrication, when the photoresist marking changes, step S202 obtains the parameters of the currently marked photoresist, and step S203 compares these parameters with preset photoresist parameters. When the parameters of the currently marked photoresist are outside the preset range, the exposure parameters for subsequent photoresist production are adjusted based on pre-stored exposure parameters matching the preset parameters or the average and calibration values ​​of exposure parameters from some batches produced with the currently marked photoresist. When the photoresist parameters are within the preset range, the exposure parameters from the production of the previously marked photoresist are used as the standard for producing the currently marked photoresist, achieving automatic and accurate adjustment of exposure parameters during photolithography. When the parameters of the currently marked photoresist match the preset parameters, the exposure parameters matching the preset parameters are used, reducing the number of times exposure parameters need to be readjusted during production, reducing the time spent setting exposure parameters, and improving production efficiency.

[0048] The above description is only a preferred embodiment of this application. It should be noted that those skilled in the art can make several improvements and modifications without departing from the principle of this invention, and these improvements and modifications should also be considered within the scope of protection of this invention.

Claims

1. A feedback system, characterized in that, include: The marking unit marks the photoresist in batches. The identification unit acquires the parameters of the photoresist with the current mark when the marking of the photoresist changes during wafer production. The parameters of the photoresist include the key dimension parameters of the pattern formed by the photoresist as a mask. The comparison unit compares the parameters of the currently marked photoresist with preset photoresist parameters; The execution unit adjusts the exposure parameters during the production of the currently marked photoresist when the parameters of the photoresist are outside the preset photoresist parameter range. The step of adjusting the exposure parameters during the production of the currently marked photoresist includes: dividing the currently marked photoresist into N batches, where N is an integer greater than or equal to 0; The exposure parameters of the first batch of photoresist are adjusted based on the exposure parameters and calibration values ​​during the production of the previously marked photoresist; the exposure parameters of the second batch of photoresist are adjusted based on the exposure parameters and calibration values ​​during the production of the currently marked first batch of photoresist; when N is greater than or equal to 3 and less than or equal to 6, the exposure parameters of the Nth batch of photoresist are adjusted based on the average value and calibration value of the exposure parameters during the production of the currently marked N-1 batches of photoresist; when N is greater than or equal to 7, the exposure parameters of the Nth batch of photoresist are adjusted based on the average value and calibration value of the exposure parameters during the production of the currently marked N-5 batches to the N-1 batches of photoresist.

2. The feedback system according to claim 1, characterized in that, Also includes: When the parameters of the currently marked photoresist are within the preset photoresist parameter range, the execution unit does not change the exposure parameters during the production of the currently marked photoresist.

3. The feedback system according to claim 2, characterized in that, The method of not changing the exposure parameters during the production of the photoresist with the current marking includes: The exposure parameters during the production of the photoresist previously marked are used as the standard for the exposure parameters during the production of the photoresist currently marked.

4. The feedback system according to claim 1, characterized in that, Also includes: The key dimension parameters of the pattern formed using the photoresist currently marked as a mask are compared with the preset target key dimensions; When the critical dimension parameters of the pattern formed using the currently marked photoresist as a mask are outside the preset target critical dimension range, the exposure parameters during the production of the currently marked photoresist are adjusted.

5. The feedback system according to claim 1, characterized in that, Also includes: The exposure parameters that match the preset photoresist parameters are pre-stored. When the parameters of the currently marked photoresist are consistent with the preset photoresist parameters, the exposure parameters that match the preset photoresist parameters are called.

6. A feedback method, characterized in that, include: The photoresist is labeled according to batch; When the markings on the photoresist change during wafer fabrication, the parameters of the photoresist at the current markings are obtained. The parameters of the photoresist include key dimensional parameters of the pattern formed by the photoresist as a mask. The parameters of the currently marked photoresist are compared with the preset photoresist parameters; When the parameters of the currently marked photoresist are outside the preset photoresist parameter range, adjust the exposure parameters during the production of the currently marked photoresist; The step of adjusting the exposure parameters during the production of the currently marked photoresist includes: dividing the currently marked photoresist into N batches, where N is an integer greater than or equal to 0; The exposure parameters of the first batch of photoresist are adjusted based on the exposure parameters and calibration values ​​during the production of the previously marked photoresist; the exposure parameters of the second batch of photoresist are adjusted based on the exposure parameters and calibration values ​​during the production of the currently marked first batch of photoresist; when N is greater than or equal to 3 and less than or equal to 6, the exposure parameters of the Nth batch of photoresist are adjusted based on the average value and calibration value of the exposure parameters during the production of the currently marked N-1 batches of photoresist; when N is greater than or equal to 7, the exposure parameters of the Nth batch of photoresist are adjusted based on the average value and calibration value of the exposure parameters during the production of the currently marked N-5 batches to the N-1 batches of photoresist.

7. The feedback method according to claim 6, characterized in that, Also includes: When the parameters of the currently marked photoresist are within the preset photoresist parameter range, the exposure parameters during the production of the currently marked photoresist are not changed.

8. The feedback method according to claim 7, characterized in that, The method of not changing the exposure parameters during the production of the photoresist with the current marking includes: The exposure parameters during the production of the photoresist previously marked are used as the standard for the exposure parameters during the production of the photoresist currently marked.

9. The feedback method according to claim 6, characterized in that, Also includes: The key dimension parameters of the pattern formed using the photoresist currently marked as a mask are compared with the preset target key dimensions; When the critical dimension parameters of the pattern formed using the currently marked photoresist as a mask are outside the preset target critical dimension range, the exposure parameters during the production of the currently marked photoresist are adjusted.

10. The feedback method according to claim 6, characterized in that, Also includes: The exposure parameters that match the preset photoresist parameters are pre-stored. When the parameters of the currently marked photoresist are consistent with the preset photoresist parameters, the exposure parameters that match the preset photoresist parameters are called.

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