phase shifter

Abstract

The application provides a phase shifter, relates to the technical field of micro electro mechanical systems, and can effectively reduce the adhesion risk of a conductive bridge and a first isolation part caused by electrostatic adsorption and improve the stability of a device. The phase shifter comprises a substrate, a first wire and a second wire arranged on one side of the substrate, the two opposite sides of the first wire are respectively provided with the second wire, the first wire and the second wire are arranged in parallel and are insulated from each other, at least one conductive bridge, the conductive bridge is arranged in cross with the first wire and is insulated from each other, the two ends of the conductive bridge are respectively overlapped with the second wire located on the two sides of the first wire and are insulated from each other, a first isolation part, the first isolation part is arranged on the side of the first wire close to the conductive bridge, and the orthographic projection of the part of the conductive bridge intersecting with the first wire on the substrate is located in the orthographic projection of the first isolation part on the substrate, and the surface of the side of the first isolation part close to the conductive bridge is uneven.

Description

Technical Field

[0001] This application relates to the field of microelectromechanical systems (MEMS) technology, and more particularly to a phase shifter. Background Technology

[0002] With the rapid development of the information age, wireless terminals with high integration, miniaturization, multifunctionality, and low cost are gradually becoming the trend in communication technology. In communication and radar applications, phase shifters are essential key components. Traditional phase shifters mainly include ferrite phase shifters and semiconductor phase shifters. Ferrite phase shifters have a large power capacity and relatively low insertion loss, but their complex manufacturing process, high cost, and large size limit their large-scale application. Semiconductor phase shifters are small in size and operate at high speed, but have relatively low power capacity, high power consumption, and are difficult to manufacture. MEMS (Micro-Electro-Mechanical System) phase shifters have significant advantages over traditional phase shifters in terms of insertion loss, power consumption, size, and cost, and have received widespread attention in fields such as radio communication and microwave technology. Summary of the Invention

[0003] The embodiments of this application adopt the following technical solutions:

[0004] On the one hand, a phase shifter is provided, comprising:

[0005] Base;

[0006] A first trace and a second trace are provided on one side of the substrate; the second trace is provided on opposite sides of the first trace, the first trace and the second trace are arranged in parallel and are insulated from each other;

[0007] At least one conductive bridge; the conductive bridge is intersecting with the first trace and is insulated from each other; the two ends of the conductive bridge are respectively connected to the second traces located on both sides of the first trace and are insulated from each other;

[0008] A first isolation portion; the first isolation portion is disposed on the side of the first trace near the conductive bridge, and the orthographic projection of the portion of the conductive bridge that intersects with the first trace on the substrate is located within the orthographic projection of the first isolation portion on the substrate; the surface of the first isolation portion on the side near the conductive bridge is not flat.

[0009] Optionally, the first isolation portion includes a first isolation unit and a second isolation unit; the surface of the first isolation unit near the conductive bridge is flat, and the second isolation unit is disposed on the side of the first isolation unit near the conductive bridge;

[0010] The second isolation unit includes a plurality of protrusions arranged in an array; the orthographic projection of the plurality of protrusions on the substrate is within the orthographic projection of the portion of the conductive bridge that overlaps with the first isolation unit on the substrate.

[0011] Optionally, the shape of the cross section of the protrusion along the direction perpendicular to the base includes a rectangle, a triangle, or a trapezoid.

[0012] Optionally, the shape of the protrusion may include a cylinder, a cone, or a frustum.

[0013] Optionally, the relative permittivity of the first isolation unit is greater than that of the second isolation unit.

[0014] Optionally, the first isolation unit covers two opposite sides of the portion where the first trace overlaps with the first isolation unit.

[0015] Optionally, the width of the first isolation unit along the first direction is greater than the width of the conductive bridge along the first direction, and the first direction is the same as the setting direction of the first trace.

[0016] Optionally, the phase shifter further includes: a second isolation portion; the second isolation portion is disposed on the side of the second trace near the conductive bridge, and the orthographic projection of the portion of the conductive bridge that overlaps with the second trace on the substrate is located within the orthographic projection of the second isolation portion on the substrate.

[0017] Optionally, the first isolation portion includes a first isolation unit and a second isolation unit; the surface of the first isolation unit near the conductive bridge is flat, and the second isolation unit is disposed on the side of the first isolation unit near the conductive bridge;

[0018] The second isolation portion has a flat surface on the side near the conductive bridge, and the thickness of the second isolation portion along the direction perpendicular to the substrate is the same as the thickness of the first isolation unit along the direction perpendicular to the substrate.

[0019] Optionally, the relative permittivity of the second isolation section is the same as that of the first isolation unit.

[0020] Optionally, the first isolation portion and the second isolation portion each comprise a single layer of isolation material;

[0021] The surface of the second isolation portion near the conductive bridge is flat, and the thickness of the second isolation portion along the direction perpendicular to the substrate is the same as the maximum thickness of the first isolation portion along the direction perpendicular to the substrate.

[0022] Optionally, the maximum thickness of the first isolation portion along the direction perpendicular to the substrate ranges from 100 nm to 1000 nm.

[0023] Optionally, the relative permittivity of the second isolation portion is the same as that of the first isolation portion.

[0024] Optionally, the relative permittivity of the first isolation portion may range from 3 to 9.

[0025] Optionally, the conductive bridge includes a body portion and overlapping portions disposed at both ends of the body portion;

[0026] In the main body, the portion that intersects with the first trace has a uniform width along the first direction, while the portion that does not intersect with the first trace has a non-uniform width along the first direction. The first direction is the same as the setting direction of the first trace.

[0027] The overlapping portion includes two independent overlapping ends, which are in contact with the corresponding second isolation portion.

[0028] Optionally, the phase shifter further includes a first control unit;

[0029] The first control unit is electrically connected to the conductive bridge and is configured to transmit a drive voltage to the conductive bridge when the phase shifter is in a phase-shifted state.

[0030] Optionally, the phase shifter further includes a second control unit;

[0031] The second control unit is electrically connected to the conductive bridge and the first trace respectively, and is configured to electrically connect the conductive bridge and the first trace when the phase shifter is in a non-phase-shifted state, so as to discharge the conductive bridge.

[0032] Optionally, the phase shifter includes a plurality of the conductive bridges;

[0033] The plurality of conductive bridges are spaced apart along a first direction, which is the same as the setting direction of the first trace.

[0034] Optionally, the plurality of said conductive bridges are divided into a first group and a second group; each group includes at least one of said conductive bridges;

[0035] In the first group, each of the conductive bridges has the same phase shift degree;

[0036] In the second group, the phase shift degree corresponding to each of the conductive bridges is different.

[0037] Optionally, the phase shift degree corresponding to the conductive bridge in the first group is greater than the phase shift degree corresponding to the conductive bridge in the second group.

[0038] The above description is only an overview of the technical solution of this application. In order to better understand the technical means of this application and to implement it in accordance with the contents of the specification, and to make the above and other objects, features and advantages of this application more obvious and understandable, the following are specific embodiments of this application. Attached Figure Description

[0039] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0040] Figure 1 A schematic diagram of a phase shifter is shown.

[0041] Figure 2-8 Schematic illustration along Figure 1 Multiple cross-sectional views in the CC direction;

[0042] Figure 9-12 The schematic diagrams of various phase shifters are shown.

[0043] Figure 13 In the diagram, Figure a is a 3D view of the simulated structure, and Figure b is a top view. Detailed Implementation

[0044] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0045] In the embodiments of this application, the terms "first," "second," etc., are used to distinguish identical or similar items with substantially the same function and effect, solely for the purpose of clearly describing the technical solutions of the embodiments of this application, and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Furthermore, "multiple" means two or more, and "at least one" means one or more, unless otherwise explicitly defined.

[0046] Embodiments of this application provide a phase shifter, combined with Figure 1 and Figure 2 As shown, the phase shifter includes:

[0047] Substrate 10; the material of the substrate is not limited, but for example, it can be a rigid material, such as glass.

[0048] A first trace 1 and a second trace 2 are provided on one side of the base 10; the second trace 2 are provided on opposite sides of the first trace 1, and the first trace 1 and the second trace 2 are arranged in parallel and insulated from each other.

[0049] At least one conductive bridge 3; the conductive bridge 3 is arranged to cross the first trace 1 and is insulated from each other; the two ends of the conductive bridge 3 are respectively connected to the second trace 2 located on both sides of the first trace 1 and are insulated from each other.

[0050] First isolation section 4; the first isolation section 4 is disposed on the side of the first trace 1 near the conductive bridge 3, and in the portion of the conductive bridge 3 that intersects with the first trace 1. Figure 1 The orthographic projection of region B, defined by the dashed line, onto the substrate lies within the orthographic projection of the first isolation portion 4 onto the substrate; the surface of the first isolation portion 4 near the conductive bridge 3 is not flat.

[0051] It should be noted that the aforementioned conductive bridge is configured such that, when no power is applied, there is a gap between the conductive bridge and the first isolation part, and they do not contact each other; when power is applied, the conductive bridge deforms towards the side closer to the first isolation part.

[0052] The first trace described above can be used as a coplanar waveguide (CPW) signal line, and the second trace described above can be used as a coplanar waveguide ground line. The first and second traces work together to form a coplanar waveguide transmission line. The phase shifting principle of this phase shifter is as follows: When the conductive bridge is not energized (i.e., no driving voltage is applied), there is a gap between the conductive bridge and the first isolation part, and they do not contact each other. High-frequency signals do not change phase when passing through the phase shifter. When the conductive bridge is energized (i.e., a driving voltage is applied), the conductive bridge deforms towards the side closer to the first isolation part under the action of electrostatic force. When the driving voltage is large enough, the electrostatic force pulls the conductive bridge down to contact the first isolation part. After the conductive bridge deforms, the distance between the conductive bridge and the first trace changes, thereby changing the distributed capacitance of the coplanar waveguide transmission line, thus making the coplanar waveguide transmission line a slow-wave system, achieving the purpose of phase delay. It should be noted that... Figures 2-5 The illustrations are all based on the example where there is a gap between the conductive bridge and the first isolation part, and they do not contact each other.

[0053] Second routes are respectively set on both sides opposite to the first route, as shown in the reference. Figure 1 As shown, the two sides opposite to the first trace 1 refer to the left and right sides of the first trace 1, respectively, where the second trace 2 is set; rather than the top and bottom sides of the first trace 1.

[0054] The materials of the first trace, the second trace, and the conductive bridge are not limited; for ease of manufacturing and cost reduction, the three can be made of the same material; for example, the three materials can be conductive metals such as aluminum, silver, or copper.

[0055] The material of the first isolation section is not limited, as long as it can provide insulation. By providing the first isolation section between the conductive bridge and the first trace, the problem of poor signal transmission caused by short circuit between the two is avoided.

[0056] The surface of the first isolation portion near the conductive bridge is uneven, indicating that the surface of the first isolation portion near the conductive bridge is uneven. The specific implementation of this unevenness is not limited here; for example, an uneven surface can be obtained through surface deburring, surface wavy texture, or surface granulation. Alternatively, multiple protrusions can be provided to form an uneven surface. It should be noted that the aforementioned unevenness refers to unevenness caused by structural changes, such as forming an uneven surface by providing protrusions; unevenness within the process error range caused by limitations of actual process conditions is not included in this definition.

[0057] The specific shape of the aforementioned conductive bridge is not limited. For example, the conductive bridge can be strip-shaped, or it can be other shapes.

[0058] It should be noted that electrostatic force is a key factor in the deformation of the conductive bridge. The magnitude of the electrostatic force directly affects the degree of deformation of the conductive bridge, which in turn affects the distance between the conductive bridge and the first trace, and ultimately affects the phase delay. When a sufficiently large driving voltage is applied to the conductive bridge, the electrostatic force pulls the conductive bridge down to the first isolation section. If the surface of the first isolation section near the conductive bridge is very flat, the contact area between the conductive bridge and the first isolation section will be relatively large after the conductive bridge is pulled down. Under electrostatic adsorption, there is a risk of adhesion between the conductive bridge and the first isolation section. Therefore, as the driving voltage decreases until it is removed, there is a risk that the conductive bridge will detach from the first isolation section, thereby reducing the stability of the device.

[0059] The phase shifter provided in this application can delay the phase of high-frequency signals. On the other hand, since the surface of the first isolation part near the conductive bridge is not flat, when the conductive bridge is pulled down to the first isolation part, the contact area between the conductive bridge and the first isolation part can be greatly reduced, thereby effectively reducing the risk of adhesion between the conductive bridge and the first isolation part caused by electrostatic adsorption, and thus improving the stability of the device.

[0060] In one or more embodiments, to reduce manufacturing difficulty, refer to Figures 2-5As shown, the first isolation section 4 includes a first isolation unit 41 and a second isolation unit 42; the surface of the first isolation unit 41 near the conductive bridge 3 is flat, and the second isolation unit 42 is disposed on the side of the first isolation unit 41 near the conductive bridge 3.

[0061] The second isolation unit 42 includes a plurality of protrusions 43 arranged in an array; the orthographic projection of the plurality of protrusions on the substrate is within the orthographic projection of the portion of the conductive bridge that overlaps with the first isolation unit on the substrate.

[0062] The aforementioned first isolation section comprises two isolation units. The materials of the first and second isolation units can be the same or different. Furthermore, the relative permittivity of the first and second isolation units can be the same or different; no limitation is imposed here. The specific shape and number of protrusions included in the aforementioned second isolation unit are not limited.

[0063] The surface of the first isolation unit near the conductive bridge is flat, and this flatness includes unevenness within the range of process error caused by actual process conditions.

[0064] The second isolation unit includes multiple protrusions arranged in an array, which makes the surface of the first isolation part near the conductive bridge uneven. This structure is simple and easy to implement.

[0065] Optionally, to facilitate manufacturing and reduce manufacturing difficulty, the shape of the cross-section of the protrusion along the direction perpendicular to the base includes: Figure 2 The rectangle shown Figure 4 The triangle shown, or Figure 3 The shape shown is a trapezoid. Of course, other regular shapes can also be used, depending on the specific requirements.

[0066] Optionally, to facilitate manufacturing and reduce production difficulty, the protrusion shape can include a cylinder, cone, or frustum. For further reduction in manufacturing difficulty and production costs, refer to... Figure 2-5 As shown, the multiple protrusions 43 are all the same in shape and size.

[0067] Optionally, the relative permittivity of the first isolation unit is greater than that of the second isolation unit, thereby adjusting the capacitance between the conductive bridge and the first trace to achieve a corresponding phase delay.

[0068] Optionally, to further protect the first trace and better prevent short circuits between the first trace and the conductive bridge, refer to... Figure 2 As shown, the first isolation unit 41 covers the two opposite sides of the portion where the first trace 1 intersects with the first isolation unit 41. Figure 2 (Side L1 and side L2 shown).

[0069] Optionally, to further avoid contact between the first trace and the conductive bridge, and to prevent a short circuit between them, refer to... Figure 1 As shown, the first isolation unit 41 is along the first direction ( Figure 1 The width W0 of the conductive bridge 3 along the first direction (as shown in the AO direction) is greater than that along the first direction (as shown in the AO direction). Figure 1 The width W1 of the first direction (in the AO direction shown) is... Figure 1 The AO direction shown is the same as the setting direction of the first trace 1.

[0070] In one or more embodiments, to avoid contact between the second trace and the conductive bridge, and to prevent poor signal transmission due to a short circuit between them, refer to... Figure 1-5 As shown, the phase shifter further includes: a second isolation section 5; the second isolation section 5 is disposed on the side of the second trace 2 near the conductive bridge 3, and references... Figure 4 The orthographic projection S1 of the portion of the conductive bridge 3 that overlaps with the second trace 2 on the substrate 10 is located within the orthographic projection S2 of the second isolation portion 5 on the substrate 10.

[0071] The material of the second isolation portion is not limited, as long as it can provide insulation. The materials of the second isolation portion and the first isolation portion can be the same or different; this is not limited here. Furthermore, the thicknesses of the second isolation portion and the first isolation portion along the direction perpendicular to the substrate can be the same or different. It should be noted that the two ends of the conductive bridge overlap with the second traces located on both sides of the first trace. In a phase shifter equipped with a second isolation portion, refer to... Figure 1-5 As shown, the two ends of the conductive bridge 3 can respectively contact and be fixed together with the corresponding second isolation part 5.

[0072] The following provides a specific structure for the first isolation section and the second isolation section.

[0073] refer to Figure 2-5 As shown, the first isolation section 4 includes a first isolation unit 41 and a second isolation unit 42; the surface of the first isolation unit 41 near the conductive bridge 3 is flat, and the second isolation unit 42 is disposed on the side of the first isolation unit 41 near the conductive bridge 3.

[0074] The surface of the second isolation section 5 near the conductive bridge 3 is flat, and reference Figure 4 The thickness of the second isolation portion 5 along the direction perpendicular to the substrate 10 is the same as the thickness of the first isolation unit 41 along the direction perpendicular to the substrate 10, both being H1.

[0075] The materials of the second isolation section and the first isolation unit can be the same or different; no limitation is made here. Furthermore, the relative permittivity of the second isolation section and the first isolation unit can be the same or different. To simplify the manufacturing process and reduce costs, the second isolation section and the first isolation unit can be manufactured from the same material using a single patterning process.

[0076] The structure of the second isolation unit described above can be as follows: Figure 2-5 As shown, it includes multiple protrusions arranged in an array. For details, please refer to the previous description, which will not be repeated here.

[0077] When the conductive bridge is not energized, the distance between the conductive bridge and the first isolation unit is the same as the distance between the conductive bridge and the second isolation unit. Therefore, by adjusting the thickness of the second isolation unit along the direction perpendicular to the substrate, the distance between the conductive bridge and the second isolation unit can be adjusted, thereby achieving a phase delay of a corresponding phase shift, especially for very small phase shifts (e.g., 5.625°). Alternatively, the phase delay of a corresponding phase shift can also be achieved by adjusting the thickness of the first isolation unit along the direction perpendicular to the substrate.

[0078] Optionally, in order to simplify the manufacturing process and reduce manufacturing costs, the relative permittivity of the second isolation part is the same as that of the first isolation unit.

[0079] The following provides another specific structure for the first and second isolation sections.

[0080] The first and second isolation portions each comprise a single layer of isolation material; the surface of the second isolation portion near the conductive bridge is flat, and references... Figure 5 As shown, the thickness of the second isolation portion 5 along the direction perpendicular to the substrate 10 is the same as the maximum thickness of the first isolation portion 4 along the direction perpendicular to the substrate 10, both being td.

[0081] It should be noted that, due to the uneven surface of the first isolation portion near the conductive bridge, the thickness of the first isolation portion along the direction perpendicular to the substrate is not uniform, resulting in... Figure 5 The maximum thickness td is shown.

[0082] The surface of the first isolation part near the conductive bridge is uneven. Here, the specific implementation of the uneven surface of the first isolation part near the conductive bridge is not limited. For example, the uneven surface can be obtained by surface deburring, surface wavy or surface granulation. Alternatively, multiple protrusions can be provided to form an uneven surface.

[0083] Phase delays with different phase shift degrees can be achieved by adjusting the maximum thickness of the first isolation part along the direction perpendicular to the substrate, or by adjusting the dielectric constant of the first isolation part.

[0084] For MEMS phase shifters, the switching capacitor ratio (Cr) is a key parameter determining the phase shift. The phase shift per unit length of the phase shifter increases exponentially with the increase of the switching capacitor ratio. The formula for calculating the switching capacitor ratio (Cr) is:

[0085]

[0086] Where Cd is the off-state capacitance, which is the capacitance formed by the conductive bridge under electrostatic force when a driving voltage is applied to the conductive bridge, causing it to deform towards the first isolation section. When the driving voltage is large enough, the electrostatic force pulls the conductive bridge down to contact the first isolation section. At this time, the off-state capacitance formed by the conductive bridge, the first isolation section, and the first trace is Cd. Cu is the on-state capacitance, which is the capacitance formed by the conductive bridge, the air gap, the first isolation section, and the first trace when no driving voltage is applied to the conductive bridge. εr is the relative permittivity of the first isolation section, referenced... Figure 5 As shown, g0 is the initial distance between the conductive bridge 3 and the first isolation part 4 (i.e., the distance between them when the conductive bridge is not energized), and td is the thickness of the first isolation part 4 along the direction perpendicular to the substrate 10.

[0087] From the formula for Cr, it can be seen that the switching capacitance ratio Cr is directly proportional to εr and g0, and inversely proportional to td. Therefore, adjusting the relative permittivity of the first isolation section, the initial distance between the conductive bridge and the first isolation section, and the thickness of the first isolation section along the direction perpendicular to the substrate can all change the switching capacitance ratio, thereby achieving phase delays with different phase shift degrees. The smaller the phase shift degree, the higher the phase shift accuracy can be. Therefore, by increasing the relative permittivity of the first isolation section, increasing the initial distance between the conductive bridge and the first isolation section, or decreasing the thickness of the first isolation section along the direction perpendicular to the substrate, a smaller phase shift degree can be achieved, thereby improving the phase shift accuracy.

[0088] Optionally, to accommodate high-bit phase shifters and 45° phase shifters, the maximum thickness of the first isolation portion along the direction perpendicular to the substrate can range from 100 nm to 1000 nm. In this case, silicon nitride can be used as the material for the first isolation portion. Currently, the unit phase shift of a 4-phase shifter is 22.5°, and the unit phase shift of a 5-phase shifter is 11.25°. To obtain a smaller phase shift, the maximum thickness of the first isolation portion along the direction perpendicular to the substrate can range from 200 nm to 600 nm. If this phase shifter is applied to a 4-phase shifter, the first isolation portion can be made of silicon nitride, and its maximum thickness along the direction perpendicular to the substrate can be 300 nm.

[0089] use Figure 13 The structure shown is used for simulation modeling. Figure 13Figure a is a 3D view, and Figure b is a top view. This structure uses silicon nitride with a relative permittivity of 7 to form the first isolation portion. With the relative permittivity of the first isolation portion and the initial distance between the conductive bridge and the first isolation portion remaining constant, different phase shift degrees are obtained by changing the thickness of the first isolation portion along the direction perpendicular to the substrate. Furthermore, this design of changing the phase shift degree by altering the thickness of the first isolation portion along the direction perpendicular to the substrate has little impact on the driving voltage of the conductive bridge; that is, different phase shift degrees can be achieved without increasing the driving voltage.

[0090] Table 1

[0091]

[0092] Referring to Table 1, with the relative permittivity of the first isolation section and the initial distance between the conductive bridge and the first isolation section remaining constant, the corresponding phase shifts are 39.78°, 22.6°, and 15.55° when the thickness of the first isolation section along the direction perpendicular to the substrate is 150nm, 300nm, and 450nm, respectively. In Table 1, εr is the relative permittivity of the first isolation section, h is the distance between the conductive bridge and the first isolation section, S11 represents the return loss, S21 represents the insertion loss, Cang_deg represents the phase, and Δ represents the phase shift. It should be noted that in the structure used for simulation modeling, the surface of the first isolation section near the conductive bridge is flat. The simulation results for phase shifters with an uneven surface on the side of the first isolation section near the conductive bridge are similar to those described above, and will not be specifically described here.

[0093] Optionally, in order to simplify the process and reduce manufacturing costs, the relative permittivity of the second isolation part is the same as that of the first isolation part.

[0094] Optionally, to ensure compatibility with high-bit phase shifters and improve phase shifting accuracy, the relative permittivity of the first isolation section can range from 3 to 9. If the phase shifter is applied to a 4-bit phase shifter, the first isolation section can be made of silicon nitride with a relative permittivity of 7, and its maximum thickness along the direction perpendicular to the substrate can be 300 nm.

[0095] use Figure 13 The structure shown is simulated and modeled. In this structure, the thickness of the first isolation part along the direction perpendicular to the substrate is 300 nm. With the thickness of the first isolation part along the direction perpendicular to the substrate and the initial distance between the conductive bridge and the first isolation part remaining unchanged, different phase shift degrees are obtained by changing the relative permittivity of the first isolation part.

[0096] Table 2

[0097]

[0098] Referring to Table 2, with a thickness of 300 nm in the direction perpendicular to the substrate for the first isolation section and an unchanged initial distance between the conductive bridge and the first isolation section, the phase shift degrees corresponding to 5, 7, and 9 for the first isolation section are 16.54°, 22.6°, and 28.22°, respectively. The meanings of the parameters in each column of Table 2 are the same as in Table 1, and will not be repeated here. It should be noted that in the structure used for simulation modeling, the surface of the first isolation section near the conductive bridge is flat. The simulation results for phase shifters with an uneven surface on the side of the first isolation section near the conductive bridge are similar to those described above, and will not be specifically explained here. Furthermore, changing the relative permittivity of the first isolation section to alter the phase shift degree design has little effect on the driving voltage of the conductive bridge; that is, different phase shift degrees can be achieved without increasing the driving voltage.

[0099] The following provides a specific structure for a conductive bridge.

[0100] To achieve a better overlap and facilitate the pull-down of the conductive bridge, refer to... Figure 1 As shown, the conductive bridge 3 includes a main body 30 and overlapping portions 31 disposed at both ends of the main body 30.

[0101] refer to Figure 1 As shown, in the main body 30, the portion that intersects with the first trace 1 ( Figure 1 The region B defined by the dashed line runs along the first direction ( Figure 1 The width W1 of the AO direction shown is uniform, and the width of the portion that does not intersect with the first trace along the first direction is not uniform. Figure 1 The AO direction shown is the same as the setting direction of the first trace 1. Figure 1 In the body portion 30, the width of the portion that does not intersect with the first wiring along the first direction includes W2, W3, and W4.

[0102] refer to Figure 1 As shown, the overlapping portion 31 includes two independent overlapping ends 311, which are in contact with the corresponding second isolation portion 5. (Reference) Figure 1 As shown, the area D defined by the dashed line is the part where the overlapping end 311 contacts the second isolation part 5. This area can also be called the anchor point area.

[0103] In one or more embodiments, to better control the driving voltage of the conductive bridge, reference is made. Figure 1 As shown, the phase shifter also includes a first control unit 6; the first control unit 6 is electrically connected to the conductive bridge 3 and is configured to transmit a drive voltage to the conductive bridge when the phase shifter is in a phase-shifting state.

[0104] The structure of the first control unit described above is not limited. For example, the first control unit may include a thin film transistor (TFT), which includes a gate, a first electrode, and a second electrode. The first electrode can be... Figure 1 The first trace 8 shown is connected to one end 311 of the conductive bridge 3. The gate can be connected to a control signal, and the second terminal can be connected to a drive voltage signal. Under the control of the control signal, the thin film transistor is turned on, thereby allowing the drive voltage signal to be transmitted to the first control unit.

[0105] In one or more embodiments, reference is made to Figure 1 As shown, the phase shifter also includes a second control unit 7; the second control unit 7 is electrically connected to the conductive bridge 3 and the first trace 1 respectively, and is configured to electrically connect the conductive bridge and the first trace when the phase shifter is in a non-phase-shifting state, so as to discharge the conductive bridge; in this way, the residual charge on the conductive bridge can be avoided from affecting the next phase shift, thereby improving the stability and accuracy of the phase shift. (Reference) Figure 1 As shown, the second control unit 7 can be electrically connected to the conductive bridge 3 via the second trace 9, and to the first trace 1 via the third trace 11.

[0106] In one or more embodiments, to achieve a phase delay with greater phase shift, reference Figure 9-12 As shown, the phase shifter includes multiple conductive bridges 3; the multiple conductive bridges 3 are spaced apart along a first direction (OA direction), and the first direction (OA direction) is the same as the setting direction of the first trace 1.

[0107] The aforementioned multiple conductive bridges may correspond to the same phase shift; or, different conductive bridges may correspond to different phase shifts; or, some conductive bridges may correspond to the same phase shift, while the remaining conductive bridges may correspond to different phase shifts. No limitation is made here.

[0108] An N-shift phase shifter can include 2N-1 conductive bridges. Taking a 5-shift phase shifter as an example, refer to... Figure 9As shown, the phase shifter consists of 31 cascaded conductive bridges, each corresponding to a phase shift of 11.25°. Based on the phase shifter's position, it can be divided into 5 groups: 11.25° corresponds to 1 conductive bridge, 22.5° to 2 conductive bridges, 45° to 4 conductive bridges, 90° to 8 conductive bridges, and 180° to 16 conductive bridges, thus forming 5 MEMS switches (i.e., 5-phase shifters). When none of the DC bias points 20 of the 5-phase shifter's DC bias point array are connected to a bias voltage, the high-frequency signal has no phase change when passing through the phase shifter. When a bias voltage is applied to at least one bias point corresponding to the 22.5°, 45°, 90°, and 180° MEMS switches, respectively, the height of all MEMS switches corresponding to that DC bias point 20 changes. Consequently, the phase of the high-frequency signal passing through the phase shifter changes accordingly. For example, when bias voltages are applied to the bias points corresponding to the 22.5°, 45°, 90°, and 180° MEMS switches, respectively, the phase of the high-frequency signal passing through the phase shifter will change by 22.5°, 45°, 90°, and 180°, respectively. Each group of conductive bridges is connected in parallel. In this structure, each conductive bridge corresponds to a phase shift degree; this structure requires a large number of conductive bridges, resulting in a large device area and high production costs.

[0109] To reduce the number of conductive bridges, different phase shift degrees can be obtained by changing the relative permittivity of the first isolation portion, or the maximum thickness of the first isolation portion along the direction perpendicular to the substrate. By increasing the relative permittivity of the first isolation portion or decreasing its maximum thickness along the direction perpendicular to the substrate, two types of conductive bridges can be obtained: one with a phase shift degree of 22.5° and the other with a phase shift degree of 11.25°. To further reduce the number of conductive bridges, refer to... Figure 10 As shown, the 11.25° position corresponds to one conductive bridge, the 22.5° position to one conductive bridge, the 45° position to two conductive bridges (conductive bridges with a phase shift of 22.5°), the 90° position to four conductive bridges (conductive bridges with a phase shift of 22.5°), and the 180° position to eight conductive bridges (conductive bridges with a phase shift of 22.5°), thus forming five MEMS switches (i.e., five phase shifters). This phase shifter only requires 16 conductive bridges, compared to... Figure 9 The phase shifter shown reduces the number of conductive bridges from 31 to 16, significantly reducing the number of conductive bridges and halving the device area, thereby greatly reducing costs.

[0110] In one or more embodiments, three types of conductive bridges can be obtained by changing the thickness of the second isolation unit along the direction perpendicular to the substrate. The phase shift degree corresponding to the first type of conductive bridge is 5.625°, the phase shift degree corresponding to the second type of conductive bridge is 11.25°, and the phase shift degree corresponding to the third type of conductive bridge is 22.5°.

[0111] To further reduce the number of conductive bridges, refer to Figure 11 As shown, the 5.625° position corresponds to one conductive bridge, the 11.25° position to one conductive bridge, the 22.5° position to one conductive bridge, the 45° position to two conductive bridges (conductive bridges with a phase shift of 22.5°), the 90° position to four conductive bridges (conductive bridges with a phase shift of 22.5°), and the 180° position to eight conductive bridges (conductive bridges with a phase shift of 22.5°), thus forming six MEMS switches (i.e., a six-phase shifter). This phase shifter only requires 17 conductive bridges, compared to... Figure 9 The phase shifter shown reduces the number of conductive bridges from 31 to 17, significantly reducing the number of conductive bridges and device area, thereby greatly reducing costs. At the same time, the impact on the driving voltage of the conductive bridges is not significant, meaning that multiple phase shift degrees and high-precision phase shifting functions can be achieved without changing the driving voltage.

[0112] In one or more embodiments, four types of conductive bridges can be obtained by changing the thickness of the second isolation unit along the direction perpendicular to the substrate. The phase shift degree corresponding to the first conductive bridge is 5.625°, the phase shift degree corresponding to the second conductive bridge is 11.25°, the phase shift degree corresponding to the third conductive bridge is 22.5°, and the phase shift degree corresponding to the fourth conductive bridge is 45°.

[0113] To further reduce the number of conductive bridges, refer to Figure 12 As shown, one conductive bridge corresponds to the 5.625° position, one conductive bridge to the 11.25° position, one conductive bridge to the 22.5° position, one conductive bridge to the 45° position, two conductive bridges to the 90° position (conductive bridges with a phase shift of 45°), and four conductive bridges to the 180° position (conductive bridges with a phase shift of 45°), thus forming six MEMS switches. This phase shifter only requires ten conductive bridges, compared to... Figure 9 The phase shifter shown reduces the number of conductive bridges from 31 to 10, significantly reducing the number of conductive bridges and device area, thereby greatly reducing costs. At the same time, the impact on the driving voltage of the conductive bridges is not significant, meaning that multiple phase shift degrees and high-precision phase shifting functions can be achieved without changing the driving voltage.

[0114] In one or more embodiments, when the phase shifter includes multiple conductive bridges, then refer to Figure 9-12 As shown, the phase shifter also includes multiple DC bias points 20, through which bias voltage can be applied to the corresponding conductive bridge.

[0115] It should be noted that the reason why related MEMS phase shifters cannot achieve high-precision cell design is due to two limitations: firstly, the need for precise control of the driving voltage; and secondly, the limitation of fabrication capabilities, which prevent the fabrication of smaller conductive bridges. The high-precision phase shifter provided in this application has no special requirements for either of these aspects, making it more suitable for mass production and possessing very high practical production application value.

[0116] Optional, see reference Figure 10-12 As shown, multiple conductive bridges are divided into a first group T1 and a second group T2; each group includes at least one conductive bridge; in the first group T1, the phase shift degree corresponding to each conductive bridge is the same; in the second group T2, the phase shift degree corresponding to each conductive bridge is different.

[0117] By changing the dielectric constant or thickness of the first isolation section, the phase shift of the conductive bridge can be altered.

[0118] Further optionally, to reduce the number of conductive bridges, the phase shift degree corresponding to the first group of conductive bridges is greater than the phase shift degree corresponding to the second group of conductive bridges. For example, see reference... Figure 11 As shown, the phase shift of the first group of conductive bridges T1 is 22.5°, and the phase shift of the second group of conductive bridges T2 includes 5.625° and 11.25°. 22.5° is greater than 5.625° and also greater than 11.25°.

[0119] This application also provides a phase shifter, see reference. Figure 6-8 As shown, the structure of this phase shifter is similar to... Figure 2-5 The difference in the phase shifter shown is that the surface of the first isolation part 4 near the conductive bridge 3 is flat. The thickness of the first isolation part along the direction perpendicular to the substrate can range from 100nm to 1000nm, and its relative permittivity can range from 3 to 9. The rest of the structure is the same as the phase shifter described above, and will not be repeated here. Figure 7 The thickness H of the first isolation section 4 along the direction perpendicular to the substrate 10 is greater than... Figure 6 The thickness H of the first isolation section 4 along the direction perpendicular to the substrate 10, Figure 6 and Figure 7 In the first isolation portion 4, the thickness along the direction perpendicular to the substrate 10 is the same as the thickness of the second isolation portion 5 along the direction perpendicular to the substrate 10. Figure 8 In the middle, the first isolation section 4 includes a first isolation unit 41 and a second isolation unit 42 stacked together; and with Figure 6-8 The structure of the first isolation section shown is different. Figure 8The surface of the second isolation unit 42 near the conductive bridge is flat, and the thickness of the second isolation portion 5 along the direction perpendicular to the substrate 10 is the same as the thickness of the first isolation unit 41 along the direction perpendicular to the substrate 10. By adjusting the thickness of the first isolation portion along the direction perpendicular to the substrate or the relative permittivity of the first isolation portion, phase delays with different phase shift degrees can be achieved.

[0120] The terms "an embodiment," "embodiment," or "one or more embodiments" as used herein mean that a particular feature, structure, or characteristic described in connection with an embodiment is included in at least one embodiment of this application. Furthermore, please note that the examples of the phrase "in one embodiment" do not necessarily all refer to the same embodiment.

[0121] Numerous specific details are set forth in the specification provided herein. However, it will be understood that embodiments of this application may be practiced without these specific details. In some instances, well-known methods, structures, and techniques have not been shown in detail so as not to obscure the understanding of this specification.

[0122] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application.

Claims

1. A phase shifter, wherein, include: Base; A first trace and a second trace are provided on one side of the substrate; the second trace is provided on opposite sides of the first trace, the first trace and the second trace are arranged in parallel and are insulated from each other; At least one conductive bridge; the conductive bridge is intersecting with the first trace and is insulated from each other; the two ends of the conductive bridge are respectively connected to the second traces located on both sides of the first trace and are insulated from each other; A first isolation section; the first isolation section is disposed on the side of the first trace near the conductive bridge, and the orthographic projection of the portion of the conductive bridge that intersects with the first trace on the substrate is within the orthographic projection of the first isolation section on the substrate; the surface of the first isolation section near the conductive bridge is not flat. The first isolation section includes a first isolation unit and a second isolation unit; the surface of the first isolation unit near the conductive bridge is flat, and the second isolation unit is disposed on the side of the first isolation unit near the conductive bridge; The second isolation unit includes multiple protrusions arranged in an array; The orthographic projection of the plurality of protrusions on the substrate is located within the orthographic projection of the portion of the conductive bridge that overlaps with the first isolation unit on the substrate; The relative permittivity of the first isolation unit is greater than that of the second isolation unit.

2. The phase shifter according to claim 1, wherein, The shape of the protrusion along the cross-section perpendicular to the base includes a rectangle, a triangle, or a trapezoid.

3. The phase shifter according to claim 2, wherein, The shape of the protrusion includes a cylinder, a cone, or a frustum.

4. The phase shifter according to claim 1, wherein, The first isolation unit covers two opposite sides of the portion where the first trace intersects with the first isolation unit.

5. The phase shifter according to claim 1, wherein, The width of the first isolation unit along the first direction is greater than the width of the conductive bridge along the first direction, and the first direction is the same as the setting direction of the first trace.

6. The phase shifter according to any one of claims 1-4, wherein, The phase shifter further includes a second isolation section; the second isolation section is disposed on the side of the second trace near the conductive bridge, and the orthographic projection of the portion of the conductive bridge that overlaps with the second trace on the substrate is located within the orthographic projection of the second isolation section on the substrate.

7. The phase shifter according to claim 6, wherein, The first isolation section includes a first isolation unit and a second isolation unit; the surface of the first isolation unit near the conductive bridge is flat, and the second isolation unit is disposed on the side of the first isolation unit near the conductive bridge; The surface of the second isolation portion near the conductive bridge is flat, and the thickness of the second isolation portion along the direction perpendicular to the substrate is the same as the thickness of the first isolation unit along the direction perpendicular to the substrate.

8. The phase shifter according to claim 7, wherein, The relative permittivity of the second isolation section is the same as that of the first isolation unit.

9. The phase shifter according to claim 6, wherein, The maximum thickness of the first isolation portion along the direction perpendicular to the substrate ranges from 100 nm to 1000 nm.

10. The phase shifter according to claim 6, wherein, The conductive bridge includes a main body and overlapping portions disposed at both ends of the main body. In the main body, the portion that intersects with the first trace has a uniform width along the first direction, while the portion that does not intersect with the first trace has a non-uniform width along the first direction. The first direction is the same as the setting direction of the first trace. The overlapping portion includes two independent overlapping ends, which are in contact with the corresponding second isolation portion.

11. The phase shifter according to claim 1, wherein, The phase shifter also includes a first control unit; The first control unit is electrically connected to the conductive bridge and is configured to transmit a drive voltage to the conductive bridge when the phase shifter is in a phase-shifted state.

12. The phase shifter according to claim 1, wherein, The phase shifter also includes a second control unit; The second control unit is electrically connected to the conductive bridge and the first trace respectively, and is configured to electrically connect the conductive bridge and the first trace when the phase shifter is in a non-phase-shifted state, so as to discharge the conductive bridge.

13. The phase shifter according to claim 1, wherein, The phase shifter includes a plurality of the conductive bridges; The plurality of conductive bridges are spaced apart along a first direction, which is the same as the setting direction of the first trace.

14. The phase shifter according to claim 13, wherein, The plurality of said conductive bridges are divided into a first group and a second group; each group includes at least one of said conductive bridges; In the first group, each of the conductive bridges has the same phase shift degree; In the second group, the phase shift degree corresponding to each of the conductive bridges is different.

15. The phase shifter according to claim 14, wherein, The phase shift degree corresponding to the conductive bridge in the first group is greater than that corresponding to the conductive bridge in the second group.

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