Reaction chamber for semiconductor exhaust gas treatment apparatus and method of monitoring a reaction chamber

Abstract

The application provides a reaction cavity for a semiconductor waste gas treatment device and a monitoring method of the reaction cavity, and the reaction cavity for the semiconductor waste gas treatment device comprises a reaction cavity body, which is in a cylindrical shape, and waste gas generated in a semiconductor process is generated in the reaction cavity body; a thin film pressure sensor covers a wall surface of the reaction cavity body, and the thin film pressure sensor is used for monitoring pressure change inside the reaction cavity body; and a control module is electrically connected with the thin film pressure sensor, and the control module acquires the pressure change inside the reaction cavity body in real time according to a monitoring signal transmitted by the thin film pressure sensor. A high-incidence area of corrosion leakage of the reaction cavity of the application is a no overflow water covering area, and a force is generated on the thin film pressure sensor due to an internal negative pressure environment after corrosion, and the control module alarms and stops according to threshold value judgment of the thin film pressure sensor. The application effectively monitors corrosion of the reaction cavity through a simple device, avoids a leakage crisis possibly generated in a semiconductor process, and protects personal safety of an operator.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of semiconductor waste gas treatment, and in particular to a reaction cavity for a semiconductor waste gas treatment device and a monitoring method of the reaction cavity. BACKGROUND

[0002] In the production process of the semiconductor industry, a large number of chemicals and special gases are used, and a large amount of toxic and harmful gas process waste gas is continuously generated in the production process. Process waste gas needs to be collected, treated and discharged synchronously with the production process. The waste gas treatment system and equipment are an integral part of the semiconductor production process, and their safety and stability are directly related to the production capacity utilization rate, product yield, employee occupational health and the ecological environment.

[0003] In the semiconductor process, the harsh process refers to a process that is complex, harsh, dusty and strongly corrosive, such as the boron phosphorus silicon glass (BPSG) process in the chemical vapor deposition (CVD) process, the high aspect ratio (HARP) process, the silicon nitride (SiN) process, the metal etching (Metal ETCH) process in etching (ETCH), the atomic layer deposition (ALD) process in the diffusion process, the time sensitive network (TSN) process, etc.

[0004] In the harsh process, a large amount of SiO2 dust and strongly corrosive harmful substances need to be treated, which can easily cause problems such as poor flow of waste gas treatment equipment, dust accumulation, blockage and equipment corrosion leakage, resulting in the need to stop the equipment for maintenance. Strongly corrosive harmful substances can easily cause irreversible damage to the equipment, and in severe cases can even endanger the personal safety of the operator.

[0005] In the background section, the above-disclosed information is only used to strengthen the understanding of the background of the present application, and therefore it can include information that does not constitute prior art known to those of ordinary skill in the art. SUMMARY

[0006] At least one embodiment of the present application provides a reaction cavity for a semiconductor waste gas treatment device and a monitoring method of the reaction cavity.

[0007] In a first aspect, at least one embodiment of the present application provides a reaction cavity for a semiconductor waste gas treatment device, comprising: a reaction cavity body in a cylindrical shape, waste gas generated by a semiconductor process is generated in the reaction cavity body; a thin film pressure sensor covering the outer wall surface of the reaction cavity body, the thin film pressure sensor is used to monitor the change of air pressure inside the reaction cavity body; a control module electrically connected with the thin film pressure sensor, the control module acquires the change of air pressure inside the reaction cavity body in real time according to the monitoring signal conveyed by the thin film pressure sensor.

[0008] In a second aspect, at least one embodiment of the present application provides a monitoring method for a reaction cavity for semiconductor waste gas treatment, comprising: covering an outer wall surface of the reaction cavity body with the thin film pressure sensor; monitoring pressure changes inside the reaction cavity body through the thin film pressure sensor; the control module acquires pressure changes inside the reaction cavity body in real time according to monitoring signals transmitted by the thin film pressure sensor; and the control module controls to execute an alarm shutdown in response to the pressure inside the reaction cavity body being higher than a predetermined threshold.

[0009] For example, in some embodiments of the first aspect or the second aspect of the present application, the inner wall of the reaction cavity body comprises a covered area by overflow water and an uncovered area by overflow water, and the covered area by overflow water and the uncovered area by overflow water represent the coverage state of the overflow water entering the inside of the reaction cavity body.

[0010] For example, in some embodiments of the first aspect or the second aspect of the present application, the uncovered area by overflow water is a high-corrosion area of the reaction cavity, and the negative pressure environment inside the reaction cavity after corrosion causes the thin film pressure sensor to be stressed.

[0011] For example, in some embodiments of the first aspect or the second aspect of the present application, the outer wall surface of the reaction cavity body is all within the monitoring range of the thin film pressure sensor.

[0012] For example, in some embodiments of the first aspect or the second aspect of the present application, the thin film pressure sensor comprises: a one-dimensional single-point pressure sensor for detecting radial pressure changes along a single point of the reaction cavity body; a two-dimensional single-point pressure sensor for detecting radial and axial pressure changes along a single point of the reaction cavity body; a three-dimensional multi-point pressure sensor for detecting radial, axial and circumferential pressure changes along a single point of the reaction cavity body; and / or a three-dimensional multi-point pressure sensor for detecting radial, axial and circumferential pressure changes along multiple points of the reaction cavity body.

[0013] For example, in some embodiments of the first aspect or the second aspect of the present application, the thin film pressure sensor is one or more of an alloy thin film pressure sensor, a semiconductor material thin film pressure sensor and a diamond thin film pressure sensor.

[0014] For example, in some embodiments of the first aspect or the second aspect of the present application, the resistance of the thin film pressure sensor changes with the pressure changes inside the reaction cavity body, and the control module acquires the pressure changes inside the reaction cavity body in real time by detecting the resistance changes of the thin film pressure sensor.

[0015] For example, in some embodiments of the first aspect or the second aspect of the present application, the resistance of the thin film pressure sensor decreases as the gas pressure inside the reaction cavity body increases.

[0016] For example, in some embodiments of the first aspect or the second aspect of the present application, when the resistance of the thin film pressure sensor is lower than 3kΩ, the control module controls to execute an alarm shutdown.

[0017] The high corrosion leakage area of the reaction cavity for semiconductor waste gas treatment equipment of the present application is the no overflow water covering area. The internal negative pressure environment after corrosion causes the thin film pressure sensor to be stressed. The control module judges according to the threshold value of the thin film pressure sensor to perform an alarm shutdown. The present application effectively monitors the corrosion of the reaction cavity through a simple device, avoids the leakage crisis that may be caused by the semiconductor process, and protects the personal safety of the operator.

[0018] It should be understood that the above general description and the following detailed description are only exemplary and do not limit the present application. BRIEF DESCRIPTION OF DRAWINGS

[0019] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed in the embodiment description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor.

[0020] Figure 1 A structural schematic diagram of a reaction cavity according to an example embodiment of the present application is shown.

[0021] Figure 2 A structural schematic diagram of a semiconductor waste gas treatment equipment according to an example embodiment of the present application is shown.

[0022] Figure 3 A corrosion prevention monitoring flowchart of a reaction cavity according to some embodiments of the present application is shown.

[0023] Figure 4 A schematic diagram of the relationship between the monitored gas pressure and the resistance of a thin film pressure sensor according to some embodiments of the present application is shown.

[0024] Figure 5 A monitoring method flowchart of a reaction cavity for semiconductor waste gas treatment according to an example embodiment of the present application is shown.

[0025] Figure 6 A structural schematic diagram of a washing cavity according to some embodiments of the present application is shown. DETAILED DESCRIPTION

[0026] Example embodiments now will be described more fully hereinafter with reference to the accompanying drawings; however, the example embodiments can be implemented in any number of ways not necessarily depicted in the drawings. The embodiments described should not be interpreted as limiting the application; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the example embodiments to those skilled in the art. Like numbers refer to like elements throughout.

[0027] The described features, structures, or characteristics can be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided to give a thorough understanding of embodiments of the application. However, one skilled in the relevant art will recognize that the

[0028] The flow diagrams depicted herein are examples only and are not meant to limit the scope of the application. The flow diagrams can not include all of the steps that can be necessary for the practice of the application. For example, one or more of the steps can be performed in a different order than shown or can be omitted. Further, one or more of the steps can be performed in parallel rather than sequentially. The flow diagrams can also include other steps that are not necessary for the practice of the application.

[0029] The terms "first", "second", third", etc. are used herein to distinguish one element from another, and are not necessarily used to describe a particular sequential order. Furthermore, the terms "comprises", "comprising", "includes", "including", "has", "having", "contains", "containing" or the like are inclusive and are used as equivalents of the term "comprising" and are intended to cover any process, method, system, product, or apparatus that includes the recited elements, without necessarily excluding other elements. The term "about" when used in connection with a numerical value throughout the present disclosure denotes a range of values that fall within 20% of the value.

[0030] A semiconductor waste gas treatment apparatus according to an example embodiment of the present application will be described in detail below with reference to the accompanying drawings.

[0031] Figure 1 A structure diagram of a reaction chamber according to an example embodiment of the present application is shown.

[0032] Figure 2 A structure diagram of a semiconductor waste gas treatment apparatus according to an example embodiment of the present application is shown.

[0033] Referring to Figure 1 and Figure 2 A semiconductor waste gas treatment apparatus according to an example embodiment of the present application includes a bracket assembly 100, a reaction chamber 200, a cooling chamber 300, and a washing chamber 400.

[0034] The reaction cavity 200 comprises a reaction cavity body 210, a thin film pressure sensor 230 and a control module 240.

[0035] The reaction cavity body 210 is in a cylindrical shape, and the semiconductor process generated exhaust gas is generated in the reaction cavity body 210.

[0036] The thin film pressure sensor 230 covers the wall surface of the reaction cavity body 210, and the thin film pressure sensor 230 is used to monitor the change of the gas pressure inside the reaction cavity body 210.

[0037] The control module 240 is electrically connected with the thin film pressure sensor 230, and the control module 240 acquires the change of the gas pressure inside the reaction cavity body 210 in real time according to the monitoring signal transmitted by the thin film pressure sensor 230.

[0038] In the reaction cavity 200 of the semiconductor exhaust gas treatment equipment, the high corrosion leakage area of the reaction cavity 200 is the no overflow water covering area, and the internal negative pressure environment after corrosion causes the thin film pressure sensor 230 to be stressed, and the control module 240 alarms and stops according to the threshold value judgment of the thin film pressure sensor 230.

[0039] According to some embodiments of the present application, the thin film pressure sensor 230 covers the outer wall surface of the reaction cavity body 210, that is, the outer wall surface of the reaction cavity body 210 is all in the monitoring range of the thin film pressure sensor 230. When any place of the reaction cavity 200 is leaked due to corrosion, the thin film pressure sensor 230 can effectively monitor the leakage state in the first time, so as to make alarm in time and protect the personal safety of the operator.

[0040] In the selection process of the thin film pressure sensor 230, the type and quantity thereof can be configured in multiple ways. For example, according to the detection sensitivity requirement, the thin film pressure sensor 230 can be configured to include one or more of a one-dimensional single-point pressure sensor, a two-dimensional single-point pressure sensor, a three-dimensional multi-point pressure sensor and a three-dimensional multi-point pressure sensor.

[0041] Among them, the one-dimensional single-point pressure sensor can be configured to detect the change of the gas pressure along the radial direction of the single point of the reaction cavity body 210. The two-dimensional single-point pressure sensor can be configured to detect the change of the gas pressure along the radial direction and the axial direction of the single point of the reaction cavity body 210. The three-dimensional multi-point pressure sensor can be configured to detect the change of the gas pressure along the radial direction, the axial direction and the circumferential direction of the single point of the reaction cavity body 210. The three-dimensional multi-point pressure sensor can be configured to detect the change of the gas pressure along the radial direction, the axial direction and the circumferential direction of the multi-point of the reaction cavity body 210.

[0042] According to the selection cost of the thin film pressure sensor 230, the monitoring accuracy requirement, the kind can also be divided into one or more of alloy thin film pressure sensor, semiconductor material thin film pressure sensor and diamond thin film pressure sensor.

[0043] The bracket assembly 100 includes a first sliding rail 110 and a second sliding rail 120. The first sliding rail 110 and the second sliding rail 120 are independent of each other, and during sliding, the first sliding rail 110 and the second sliding rail 120 do not interfere with each other.

[0044] The reaction cavity 200 is arranged on the first sliding rail 110, and the waste gas generated in the semiconductor process is generated in the reaction cavity 200. The cooling cavity 300 is arranged on the bracket assembly 100, the side of the cooling cavity 300 is provided with a cooling cavity flange 310, and the cooling cavity 300 is assembled to be communicated downstream of the reaction cavity 200, and the waste gas generated in the semiconductor process enters the cooling cavity 300 for cooling through the reaction cavity 200.

[0045] The washing cavity 400 is arranged on the second sliding rail 120, and the washing cavity 400 is assembled to be communicated downstream of the cooling cavity 300, and the waste gas generated in the semiconductor process enters the washing cavity 400 after being cooled through the cooling cavity 300.

[0046] The setting height of the first sliding rail 110 and the second sliding rail 120 can be configured to be the same, similar or different.

[0047] When the setting height of the first sliding rail 110 and the second sliding rail 120 is the same or similar, the first sliding rail 110 and the second sliding rail 120 can be arranged on the same bracket in the bracket assembly 100. This arrangement can save the arrangement space inside the bracket assembly 100, so that the structure inside the bracket assembly 100 is more compact. Moreover, the arrangement of the first sliding rail 110 and the second sliding rail 120 on the same bracket in the bracket assembly 100 can make the first sliding rail 110 and the second sliding rail 120 have better pressure resistance performance. During use, the first sliding rail 110 and the second sliding rail 120 support each other in the width direction of the bracket assembly 100, and are not easily affected by external force to deform, thereby improving the fatigue strength of each other, so that the first sliding rail 110 and the second sliding rail 120 have a longer service life.

[0048] When the installation heights of the first slide rail 110 and the second slide rail 120 are different, the installation height of the first slide rail 110 can be configured to be the same as or close to the height of the center of gravity of the reaction chamber 200, and the installation height of the second slide rail 120 can be configured to be the same as or close to the height of the center of gravity of the washing chamber 400. In the process of treating the semiconductor waste gas by the semiconductor waste gas treatment device, the inner walls of the reaction chamber 200 and the washing chamber 400 are impacted by the water flow and the waste gas flow. For example, the overflow water is continuously maintained to flow into the reaction chamber 200, and the waste gas is continuously maintained to be sprayed and washed in the washing chamber 400. When the first slide rail 110 and the second slide rail 120 are respectively configured to be the same as or close to the height of the center of gravity of the reaction chamber 200 and the washing chamber 400, the semiconductor waste gas treatment device can have better operation stability.

[0049] According to some embodiments of the present application, the first slide rail 110 includes a first left slide rail 111 and a first right slide rail 112, and the first left slide rail 111 and the first right slide rail 112 are symmetrically arranged on both sides of the reaction chamber 200. When the reaction chamber 200 needs to be cleaned, an operator can remove the C-shaped sleeve above and below the reaction chamber 200, and then pull out the reaction chamber 200 along the first left slide rail 111 and the first right slide rail 112 to clean and inspect the reaction chamber 200. The first left slide rail 111 and the first right slide rail 112 are of the same height, and the slide rail length of the first left slide rail 111 and the first right slide rail 112 is greater than the maximum outer contour diameter of the reaction chamber 200.

[0050] Similarly, the second slide rail 120 can be configured to include a second left slide rail 121 and a second right slide rail 122, and the second left slide rail 121 and the second right slide rail 122 are symmetrically arranged on both sides of the washing chamber 400. When the washing chamber 400 needs to be cleaned, an operator can remove the C-shaped sleeve above and below the washing chamber 400, and then pull out the washing chamber 400 along the second left slide rail 121 and the second right slide rail 122 to clean and inspect the washing chamber 400 and replace the Bower ring and the adsorption component inside the washing chamber 400. The second left slide rail 121 and the second right slide rail 122 are of the same height, and the slide rail length of the second left slide rail 121 and the second right slide rail 122 is greater than the maximum outer contour diameter of the washing chamber 400.

[0051] Figure 3 A reaction chamber corrosion monitoring flowchart according to some embodiments of the present application is shown.

[0052] Figure 4 A schematic diagram of the relationship between the air pressure and the resistance of the monitoring of the thin film pressure sensor according to some embodiments of the present application is shown.

[0053] Figure 5 A monitoring method flowchart of a reaction chamber for semiconductor waste gas treatment according to an example embodiment of the present application is shown.

[0054] Referring to Figures 3-5 The monitoring method of the reaction cavity for semiconductor waste gas treatment of the example embodiment includes the following steps:

[0055] In S510, the thin film pressure sensor covers the wall surface of the reaction cavity body.

[0056] The thin film pressure sensor 230 covers the outer wall surface of the reaction cavity body 210, so that the outer wall surface of the reaction cavity body 210 is all within the monitoring range of the thin film pressure sensor 230. When the reaction cavity 200 leaks due to corrosion at any place, the thin film pressure sensor 230 can effectively monitor the leakage state in the first time, so as to make an alarm in time and protect the personal safety of the operator.

[0057] In S520, the gas pressure change inside the reaction cavity body is monitored by the thin film pressure sensor.

[0058] Referring to Figure 4 The resistance of the thin film pressure sensor 230 changes with the change of the gas pressure inside the reaction cavity body 210. With the increase of the gas pressure inside the reaction cavity body 210, the resistance of the thin film pressure sensor decreases.

[0059] In S530, the control module obtains the gas pressure change inside the reaction cavity body in real time by detecting the resistance change of the thin film pressure sensor. If the gas pressure inside the reaction cavity body is higher than a predetermined threshold, the control module controls to execute an alarm shutdown.

[0060] For example, when the resistance of the thin film pressure sensor 230 is lower than 3kΩ, the control module 240 monitors the resistance decrease signal of the thin film pressure sensor 230, at this time, the control module 240 controls to execute an alarm shutdown.

[0061] In the embodiment of the present application, the resistance threshold of the thin film pressure sensor 230 can be flexibly configured according to the selection of the thin film pressure sensor. Different selection of the thin film pressure sensor 230 may lead to the change of the critical value. Therefore, the monitoring resistance of the control module 240 includes but is not limited to the specific value of 3kΩ.

[0062] Figure 6 A structure schematic diagram of a washing cavity according to some embodiments of the present application is shown.

[0063] As shown in Figure 6 , the washing cavity 400 can be divided into a lower washing cavity 410, a middle washing cavity 420 and an upper washing cavity 430.

[0064] The lower layer washing cavity 410 is provided with a dust capturing nozzle 411. After the waste gas generated in the semiconductor process enters the washing cavity 400, it first enters the lower layer washing cavity 410. The spraying direction of the dust capturing nozzle 411 is opposite to the inlet direction of the waste gas. The dust capturing nozzle 411 is used to make the waste gas entering the washing cavity 400 adhere to water droplets by water spraying. The head-on collision can increase the probability of dust adhering to water droplets in the waste gas, and at the same time, plays a disturbance role on the directional flow of the waste gas, and enhances the subsequent polyurethane dust capturing capability.

[0065] The relationship between the speed of the dust particles and the speed of the liquid droplets is as follows:

[0066] m1v1-m2v2=(m1+m2)v;

[0067] Wherein m1 is the mass of the dust particles, v1 is the speed of the dust particles, m2 is the mass of the liquid droplets, v2 is the speed of the liquid droplets, and m1+m2 is the mass of the dust-attached liquid droplets; v is the speed of the dust-attached liquid droplets.

[0068] The head-on collision of the liquid droplets sprayed by the dust capturing nozzle 411 and the dust can increase the probability of dust adhering to the liquid droplets, increase the mass of the dust-attached liquid droplets, and reduce the speed of the dust-attached liquid droplets, thereby increasing the possibility of being absorbed by the polyurethane adsorption block.

[0069] The middle layer washing cavity 420 is provided with a polyurethane adsorption block 421 and / or a bower ring adsorption layer 422. Corresponding to the polyurethane adsorption block 421 and the bower ring adsorption layer 422, the middle layer washing cavity 420 is also provided with water spraying nozzles of different levels.

[0070] After the waste gas enters the middle layer washing cavity 420, the polyurethane adsorption block 421 will first perform primary filtering and adsorption on the waste gas. The polyurethane adsorption block 421 has a larger specific surface area than the bower ring adsorption layer 422, has a better film-hanging effect, and has a smaller influence on negative pressure. The polyurethane adsorption block 421 is placed at the variable-diameter position of the middle layer washing cavity 420 and the lower layer washing cavity 410. After the flue gas passes through the variable-diameter position, the gas flow rate and pressure are reduced, and the flow direction has a diffusion trend. The polyurethane adsorption block 421 with a larger specific surface area is helpful for dust adsorption. The first water spraying nozzle 423 is used to clean the dust on the polyurethane adsorption block 421, so as to maintain the dust capturing efficiency of the polyurethane adsorption block 421.

[0071] The bower ring adsorption layer 422 has a secondary adsorption treatment effect, and is used to capture the missed dust. In addition, the bower ring adsorption layer 422 can also absorb the moisture in the waste gas, and reduce the gas humidity in the secondary adsorption process, so that the exhaust gas can be directly discharged into the atmosphere. The second water spraying nozzle 424 is used to clean the dust on the bower ring adsorption layer 422, so as to maintain the dust capturing and moisture absorbing efficiency of the bower ring adsorption layer 422.

[0072] The exhaust gas is discharged through the upper layer washing cavity 430 after being adsorbed and treated in the middle layer washing cavity 420. The outer contour of the upper layer washing cavity 430 is smaller than that of the middle layer washing cavity 420, which can accelerate the discharge speed of the gas. At the same time, the small discharge radius is also conducive to monitoring and controlling the discharged gas.

[0073] The exemplary embodiments of the present application are specifically shown and described above. It should be understood that the present application is not limited to the detailed structure, arrangement or implementation method described herein; on the contrary, the present application is intended to cover various modifications and equivalent arrangements included in the spirit and scope of the appended claims.

Claims

1. A reaction chamber for semiconductor exhaust gas treatment, characterized by, The method comprises the following steps: a reaction cavity body in a cylindrical shape, in which waste gas generated in a semiconductor process is generated; a thin film pressure sensor covering the outer wall surface of the reaction cavity body, the thin film pressure sensor being used to monitor the change in air pressure inside the reaction cavity body; a control module electrically connected to the thin film pressure sensor, the control module being used to acquire the change in air pressure inside the reaction cavity body in real time according to the monitoring signal transmitted by the thin film pressure sensor; the thin film pressure sensor comprises: a one-dimensional single-point pressure sensor used to detect the change in air pressure in the radial direction at a single point on the reaction cavity body; a two-dimensional single-point pressure sensor used to detect the change in air pressure in the radial direction and the axial direction at a single point on the reaction cavity body; a three-dimensional multi-point pressure sensor used to detect the change in air pressure in the radial direction, the axial direction and the circumferential direction at a single point on the reaction cavity body; and / or a three-dimensional multi-point pressure sensor used to detect the change in air pressure in the radial direction, the axial direction and the circumferential direction at multiple points on the reaction cavity body.

2. The reaction chamber for semiconductor exhaust gas treatment according to claim 1, wherein The inner wall of the reaction cavity body comprises an overflow water covered area and an overflow water uncovered area, the overflow water covered area and the overflow water uncovered area representing the covering state of the overflow water entering the inside of the reaction cavity body.

3. The reaction chamber for semiconductor exhaust gas treatment according to claim 2, wherein The overflow water uncovered area is a high-corrosion area of the reaction cavity, and the negative pressure environment inside the reaction cavity after corrosion causes the thin film pressure sensor to be stressed.

4. The reaction chamber for semiconductor exhaust gas treatment according to claim 1, wherein The outer wall surface of the reaction cavity body is within the monitoring range of the thin film pressure sensor.

5. The reaction chamber for semiconductor exhaust gas treatment according to any one of claims 1 to 4, characterized by, The thin film pressure sensor is one or more of an alloy thin film pressure sensor, a semiconductor material thin film pressure sensor and a diamond thin film pressure sensor.

6. A monitoring method for a reaction chamber for semiconductor exhaust gas treatment as claimed in any one of claims 1 to 5, characterized in that, The method comprises the following steps: covering the inner wall of the reaction cavity body with the thin film pressure sensor; monitoring the change in air pressure inside the reaction cavity body by the thin film pressure sensor; the control module acquires the change in air pressure inside the reaction cavity body in real time according to the monitoring signal transmitted by the thin film pressure sensor; in response to the air pressure inside the reaction cavity body being higher than a predetermined threshold value, the control module controls to execute alarm shutdown.

7. The monitoring method according to claim 6, wherein the resistance of the thin film pressure sensor changes with the change in air pressure inside the reaction cavity body, and the control module acquires the change in air pressure inside the reaction cavity body in real time by detecting the change in resistance of the thin film pressure sensor.

8. The monitoring method according to claim 7, wherein with the increase of the air pressure inside the reaction cavity body, the resistance of the thin film pressure sensor decreases.

9. The monitoring method according to claim 8, wherein when the resistance of the thin film pressure sensor is lower than 3kΩ, the control module controls to execute alarm shutdown.

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