Scanning driving circuit, array substrate and display panel

Abstract

The present disclosure provides a scan driving circuit, an array substrate, and a display panel. In the scan driving circuit, an input end of a leakage protection unit is electrically connected to a power supply end of a corresponding GDL circuit, and an output end of the leakage protection unit is electrically connected to a pull-down control node of the corresponding GDL circuit; when the power supply end of the corresponding GDL circuit is at a first potential, the leakage protection unit controls the potential of the pull-down control node of the corresponding GDL circuit to switch between the first potential and a second potential; wherein the first potential is the potential for controlling the first switching unit, the second switching unit, and the third switching unit to be in an on state; and the second potential is the potential for controlling the first switching unit, the second switching unit, and the third switching unit to be in an off state. The present disclosure can prevent the first switching unit, the second switching unit, and the third switching unit from being in an off state for a long time, thereby better preventing the first switching unit, the second switching unit, and the third switching unit from generating leakage current.

Description

Technical Field

[0001] The present disclosure relates to the field of display technologies, and particularly to a scanning driving circuit, an array substrate, and a display panel. Background Art

[0002] Liquid Crystal Displays (LCDs) have many advantages such as thin body, power saving, and no radiation, and thus have been widely used. For example, LCD TVs, mobile phones, personal digital assistants (PDAs), digital cameras, computer screens, or laptop computer screens, etc., dominate the flat panel display field.

[0003] The GDL technology (Gate Driver less), i.e., the technology of fewer gate drivers, is to fabricate the scanning driving circuit of the horizontal scanning line on the substrate around the display area by using the original array process of the liquid crystal display, so as to replace the external integrated circuit board (Integrated Circuit, IC) to complete the driving of the horizontal scanning line.

[0004] The row driving (GOA) unit of the array substrate in the related technology can be provided with two cascaded GDL circuits that are electrically connected to each other. The pull-down control nodes connected to the gates of some switching diodes in the above two-stage GDL circuits share the potential in the upper and lower two-stage GDL circuits, resulting in the situation that some of the above switching diodes are in the cut-off state for a long time, which easily generates leakage current. Especially in a high-temperature environment, the leakage current will increase, which easily causes abnormal phenomena such as flickering of the display panel. Summary of the Invention

[0005] To overcome the problems existing in the related technology, the present disclosure provides a scanning driving circuit, an array substrate, and a display panel.

[0006] According to the first aspect of the embodiments of the present disclosure, a scanning driving circuit is provided. The scanning driving circuit includes M cascaded GOA units. Each GOA unit includes two cascaded GDL circuits that are electrically connected to each other. Each GDL circuit in the two-stage GDL circuit includes a first switching unit, a second switching unit, and a third switching unit. The start signal terminal of the corresponding GDL circuit is electrically connected to the first low-voltage potential terminal of the corresponding GDL circuit through the first switching unit. The clock signal terminal of the corresponding GDL circuit is electrically connected to the first low-voltage potential terminal of the corresponding GDL circuit through the second switching unit. The clock signal terminal of the corresponding GDL circuit is electrically connected to the second low-voltage potential terminal of the corresponding GDL circuit through the third switching unit. The control terminals of the first switching unit, the second switching unit, and the third switching unit are respectively electrically connected to the pull-down control node of the corresponding GDL circuit, where M is a positive integer.

[0007] In the two-stage GDL circuit, the pull-down control nodes of the two GDL circuits are electrically connected to each other;

[0008] In each GDL circuit of the two-stage GDL circuit, a leakage protection unit is further included. The input end of the leakage protection unit is electrically connected to the power supply end of the corresponding GDL circuit, and the output end of the leakage protection unit is electrically connected to the pull-down control node of the corresponding GDL circuit;

[0009] When the power supply end of the corresponding GDL circuit is at the first potential, the leakage protection unit controls the potential of the pull-down control node of the corresponding GDL circuit to switch between the first potential and the second potential; wherein, the first potential is the potential for controlling the first switch unit, the second switch unit, and the third switch unit to be in the on state; the second potential is the potential for controlling the first switch unit, the second switch unit, and the third switch unit to be in the off state.

[0010] In an optional embodiment, the control end of the leakage protection unit is electrically connected to the clock signal end of the GDL circuit in the two-stage GDL circuit that is one level higher;

[0011] When the power supply end of any GDL circuit in the two-stage GDL circuit is at the first potential, the leakage protection unit of the any GDL circuit controls the potential of the pull-down control node of the any GDL circuit to switch between the first potential and the second potential according to the clock signal of the GDL circuit that is one level higher in the two-stage GDL circuit.

[0012] In an optional embodiment, each GDL circuit in the two-stage GDL circuit includes a first pull-down control module, and the leakage protection unit is electrically connected to the power supply end of the corresponding GDL circuit through the first pull-down control module of the corresponding GDL circuit.

[0013] In an optional embodiment, the leakage protection unit includes a fourth switch unit and a capacitor unit;

[0014] The control end of the fourth switch unit constitutes the control end of the leakage protection unit, the input end of the fourth switch unit constitutes the input end of the leakage protection unit, and the output end of the fourth switch unit constitutes the output end of the leakage protection unit;

[0015] The first end of the capacitor unit is electrically connected to the control end of the fourth switch unit, and the second end of the capacitor unit is electrically connected to the output end of the fourth switch unit.

[0016] In an optional embodiment, the fourth switch unit includes a transistor, and the gate of the transistor constitutes the control end of the fourth switch unit.

[0017] In an alternative embodiment, each GDL circuit in the two-stage GDL circuit includes a fifth switch unit, and the first switch unit is electrically connected to the start signal terminal of the corresponding GDL circuit through the fifth switch unit of the corresponding GDL circuit.

[0018] In an alternative embodiment, each GDL circuit in the two-stage GDL circuit includes a sixth switch unit, and the second switch unit is electrically connected to the clock signal terminal of the corresponding GDL circuit through the sixth switch unit of the corresponding GDL circuit.

[0019] In an alternative embodiment, each GDL circuit in the two-stage GDL circuit includes a seventh switch unit, and the third switch unit is electrically connected to the clock signal terminal of the corresponding GDL circuit through the seventh switch unit of the corresponding GDL circuit.

[0020] According to a second aspect of the embodiments of the present disclosure, an array substrate is provided. The array substrate includes 2M scanning lines and the scanning driving circuit as described in the first aspect. The 2M GDL circuits in the scanning driving circuit are connected to the 2M scanning lines in one-to-one correspondence, and each scanning line is connected to a plurality of pixel units.

[0021] According to a third aspect of the embodiments of the present disclosure, a display panel is provided. The display panel includes a counter substrate, a liquid crystal layer, and the array substrate as described in the second aspect. The liquid crystal layer is located between the counter substrate and the array substrate.

[0022] The technical solutions provided by the embodiments of the present disclosure may include the following beneficial effects: In the present disclosure, when the potential of the power supply terminal of the GDL circuit can control the corresponding first switch unit, second switch unit, and third switch unit to be in the on state, the leakage protection unit of the GDL circuit can control the potential of the pull-down control node of the GDL circuit to switch between a first potential and a second potential, so as to control the first switch unit, second switch unit, and third switch unit to switch back and forth between the on state and the off state, thereby shortening the duration of the first switch unit, second switch unit, and third switch unit in the off state, that is, it can avoid the first switch unit, second switch unit, and third switch unit from being in the off state for a long time, so as to better avoid the first switch unit, second switch unit, and third switch unit from generating leakage current, so as to better avoid abnormal phenomena such as flickering of the display panel based on the scanning driving circuit and improve the quality of the display panel. In addition, the scanning driving circuit can reduce the number of switch units in a single GDL circuit, which is more conducive to realizing a narrow border.

[0023] It should be understood that the above general description and the following detailed description are only exemplary and explanatory, and cannot limit the present disclosure. Brief Description of the Drawings

[0024] The drawings herein are incorporated into the specification and constitute a part of this specification, showing embodiments consistent with the present disclosure, and are used together with the specification to explain the principles of the present disclosure.

[0025] Figure 1 It is a circuit schematic diagram of a GOA unit of a scan driving circuit shown according to an exemplary embodiment.

[0026] Figure 2 It is a block diagram of a GOA unit of a scan driving circuit shown according to an exemplary embodiment.

[0027] Figure 3 It is a timing schematic diagram of a scan driving circuit shown according to an exemplary embodiment.

[0028] Figure 4 It is a schematic diagram of an array substrate shown according to an exemplary embodiment.

[0029] Figure 5 It is a schematic diagram of a display panel shown according to an exemplary embodiment.

[0030] Figure 6 It is a schematic diagram of a display device shown according to an exemplary embodiment.

[0031] Description of Reference Numerals:

[0032] 1. Display panel; 11. Array substrate; 111. Scan driving circuit; 1111. Upper GDL circuit; 1112. Lower GDL circuit; 111A. First pull-up control module; 111B. First pull-up module; 111C. First pull-down control module; 111D. Second pull-down control module; 111E. First pull-down module; 111F. First pull-down maintenance module; 111G. Second pull-up control module; 111H. Second pull-up module; 111I. Third pull-down control module; 111J. Fourth pull-down control module; 111K. Second pull-down module; 111L. First pull-down maintenance module; 111Q. Leakage protection unit; 112. Scan line; 12. Opposite substrate; 13. Liquid crystal layer; 2. Mounting structure;

[0033] GKL1, the first clock signal; STV1, the first start signal; Reset, the reset signal; output1, the first pull-down signal output circuit; VSSQ, the first low voltage potential; VSSG, the second low voltage potential; Garry(n), the nth stage transfer signal; Gout(n), the nth stage scan signal; Qb(n), the first pull-down control node; Q(n), the first pull-up control node; GKL2, the second clock signal; VDD-o, the power supply voltage; STV2, the second start signal; output2, the second pull-down signal output circuit; Garry(n + 1), the (n + 1)th stage transfer signal; Gout(n + 1), the (n + 1)th stage scan signal; Qb(n + 1), the second pull-down control node; Q(n + 1), the second pull-up control node; T1, the first switch unit; T2, the second switch unit; T3, the third switch unit; T4, the fourth switch unit; T5, the fifth switch unit; T6, the sixth switch unit; T7, the seventh switch unit; T8, the eighth switch unit; T9, the ninth switch unit; T10, the tenth switch unit; T11, the eleventh switch unit; T12, the twelfth switch unit; T13, the thirteenth switch unit; T14, the fourteenth switch unit; T15, the fifteenth switch unit. Detailed implementation manners

[0034] Here, the exemplary embodiments will be described in detail, and the examples are shown in the drawings. When the following description refers to the drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements. The implementation manners described in the following exemplary embodiments do not represent all the implementation manners consistent with the present disclosure. On the contrary, they are only examples of the devices and methods of some implementation manners of the present disclosure.

[0035] The embodiments of the present disclosure provide a scan driving circuit. In this scan driving circuit, when the potential of the power supply terminal of the GDL circuit can control the corresponding first switch unit, second switch unit, and third switch unit to be in the conducting state, the leakage protection unit of the GDL circuit can control the potential of the pull-down control node of the GDL circuit to switch between the first potential and the second potential, so as to control the first switch unit, second switch unit, and third switch unit to switch back and forth between the conducting state and the cutoff state, thereby shortening the duration of the first switch unit, second switch unit, and third switch unit in the cutoff state, that is, it can avoid the first switch unit, second switch unit, and third switch unit being in the cutoff state for a long time, so as to better avoid the first switch unit, second switch unit, and third switch unit from generating leakage current, so as to better avoid abnormal phenomena such as flickering of the display panel based on this scan driving circuit and improve the quality of the display panel. In addition, this scan driving circuit can reduce the number of switch units in a single GDL circuit, which is more conducive to realizing a narrow border.

[0036] In the first embodiment, a scan driving circuit is provided. Refer to Figure 1 and Figure 2 As shown, the scan driving circuit may include M cascaded GOA units, where M is a positive integer. Each GOA unit includes two-stage GDL circuits electrically connected to each other. The two-stage GDL circuits may include two GDL circuits. Among them, the two GDL circuits may be respectively denoted as the upper-level GDL circuit 1111 (i.e., the circuit included in the curly brackets 1111 in Figure 1 ) and the lower-level GDL circuit 1112 (i.e., the circuit included in the curly brackets 1112 in Figure 1 ). Each GDL circuit in the two-stage GDL circuits respectively includes a first switch unit T1, a second switch unit T2, and a third switch unit T3.

[0037] Among them, the start signal terminal of the GDL circuit is electrically connected to the first low-voltage potential terminal of the GDL circuit through the first switch unit T1. The clock signal terminal of the GDL circuit is electrically connected to the first low-voltage potential terminal of the GDL circuit through the second switch unit T2. The clock signal terminal of the GDL circuit is electrically connected to the second low-voltage potential terminal of the GDL circuit through the third switch unit T3. The control terminals of the first switch unit T1, the second switch unit T2, and the third switch unit T3 are respectively electrically connected to the pull-down control nodes of the corresponding GDL circuit (such as Figure 1 the first pull-down control node Qb(n) and the second pull-down control node Qb(n + 1) in Figure 1 ). That is to say, the potential of the pull-down control node can control the states of the first switch unit T1, the second switch unit T2, and the third switch unit T3. It should be noted that the states of the first switch unit T1, the second switch unit T2, and the third switch unit T3 may include a conducting state and a cutoff state.

[0038] Among them, in the two-stage GDL circuits, the pull-down control nodes of the two GDL circuits are electrically connected to each other. That is, in each GOA unit, the pull-down control node of the upper-level GDL circuit 1111 is electrically connected to the pull-down control node of the lower-level GDL circuit 1112, and the two nodes share the potential.

[0039] Among them, in each GDL circuit of the two-stage GDL circuit, a leakage protection unit 111Q is further included. The input end of the leakage protection unit 111Q is electrically connected to the power supply end of the corresponding GDL circuit, and the output end of the leakage protection unit 111Q is electrically connected to the pull-down control node of the corresponding GDL circuit. That is to say, the input end of the leakage protection unit 111Q of the upper-level GDL circuit 1111 is electrically connected to the power supply end of the upper-level GDL circuit 1111, and the output end of the leakage protection unit 111Q of the upper-level GDL circuit 1111 is electrically connected to the pull-down control node of the upper-level GDL circuit 1111. The input end of the leakage protection unit 111Q of the lower-level GDL circuit 1112 is electrically connected to the power supply end of the lower-level GDL circuit 1112, and the output end of the leakage protection unit 111Q of the lower-level GDL circuit 1112 is electrically connected to the pull-down control node of the lower-level GDL circuit 1112.

[0040] Among them, when the power supply end of the corresponding GDL circuit is at the first potential, the leakage protection unit 111Q controls the potential of the pull-down control node of the corresponding GDL circuit to switch between the first potential and the second potential. Among them, the first potential is the potential for controlling the first switch unit T1, the second switch unit T2, and the third switch unit T3 to be in the on state. The second potential is the potential for controlling the first switch unit T1, the second switch unit T2, and the third switch unit T3 to be in the off state.

[0041] That is to say, when the power supply end of the upper-level GDL circuit 1111 is at the first potential, the leakage protection unit 111Q of the upper-level GDL circuit 1111 controls the potential of the pull-down control node of the upper-level GDL circuit 1111 to switch between the first potential and the second potential. Among them, when the potential of the pull-down control node of the upper-level GDL circuit 1111 is at the first potential, the first switch unit T1, the second switch unit T2, and the third switch unit T3 of the upper-level GDL circuit 1111 are respectively in the on state, and the first switch unit T1, the second switch unit T2, and the third switch unit T3 of the lower-level GDL circuit 1112 corresponding to the upper-level GDL circuit 1111 are also respectively in the on state. When the potential of the pull-down control node of the upper-level GDL circuit 1111 is at the second potential, the first switch unit T1, the second switch unit T2, and the third switch unit T3 of the upper-level GDL circuit 1111 are respectively in the off state, and the first switch unit T1, the second switch unit T2, and the third switch unit T3 of the lower-level GDL circuit 1112 corresponding to the upper-level GDL circuit 1111 are also respectively in the off state.

[0042] Since the pull - down control nodes of the upper - level GDL circuit 1111 and the lower - level GDL circuit 1112 share a unit in the same GOA unit, for the case where the power supply terminal of the lower - level GDL circuit 1112 is at the first potential, reference can be made to the above - mentioned upper - level GDL circuit 1111, and details will not be elaborated here.

[0043] It should be noted that the first switch unit T1, the second switch unit T2, and the third switch unit T3 can be thin - film transistors (TFTs) respectively, or can be other devices or combinations that can achieve a switching effect respectively, and no limitation is made in this regard.

[0044] Among them, the first potential and the second potential can be set according to actual needs, and no limitation is made in this regard. For example, when the first switch unit T1, the second switch unit T2, and the third switch unit T3 are thin - film transistors respectively, and the thin - film transistors are in the on - state at a high potential, the first potential can be a high potential and the second potential can be a low potential. It should be noted that the high potential and the low potential are relative, and the specific values of the potential are not limited.

[0045] In this scanning driving circuit, when the potential of the power supply terminal of the GDL circuit can control the corresponding first switch unit T1, second switch unit T2, and third switch unit T3 to be in the on - state, the leakage protection unit 111Q of the GDL circuit can control the potential of the pull - down control node of the GDL circuit to switch between the first potential and the second potential, so as to control the first switch unit T1, second switch unit T2, and third switch unit T3 to switch back and forth between the on - state and the off - state. In the scanning driving circuit of the related art, generally two groups of first switch units T1, second switch units T2, and third switch units T3 are included. In the above - mentioned case, there is always a group of first switch units T1, second switch units T2, and third switch units T3 that are in the off - state for a long time (for example, the duration is 1.67 s). Therefore, compared with the scanning driving circuit of the related art, in the scanning driving circuit of the present disclosure, by controlling the first switch unit T1, second switch unit T2, and third switch unit T3 to switch back and forth between the on - state and the off - state, the duration of the first switch unit, second switch unit, and third switch unit in the off - state can be shortened, that is, it can be avoided that the first switch unit T1, second switch unit T2, and third switch unit T3 are in the off - state for a long time, so as to better avoid the generation of leakage current in the first switch unit T1, second switch unit T2, and third switch unit T3, and better avoid abnormal phenomena such as flickering of the display panel based on this scanning driving circuit, and improve the quality of the display panel. In addition, this scanning driving circuit can reduce the number of switch units in a single GDL circuit, which is more conducive to realizing a narrow bezel.

[0046] In the second embodiment, a scanning driving circuit is provided. Refer toFigure 1 As shown in the figure, in the scan driving circuit, the control end of the leakage protection unit 111Q can be electrically connected to the clock signal end of the GDL circuit at the upper level in the two-stage GDL circuit. That is, in each GOA unit, the control end of the leakage protection unit 111Q in the upper-level GDL circuit 1111 is electrically connected to the clock signal end of the upper-level GDL circuit 1111, so that the control end of the leakage protection unit 111Q accesses the clock signal of the upper-level GDL circuit 1111. The control end of the leakage protection unit 111Q of the lower-level GDL circuit 1112 can also be electrically connected to the clock signal end of the upper-level GDL circuit 1111, so that the control end of the leakage protection unit 111Q accesses the clock signal of the upper-level GDL circuit 1111.

[0047] Wherein, when the power supply terminal of any one of the two-stage GDL circuits is at the first potential, the leakage protection unit 111Q of any one of the GDL circuits controls the potential of the pull-down control node of any one of the GDL circuits to switch between the first potential and the second potential according to the clock signal of the upper-level GDL circuit in the two-stage GDL circuits.

[0048] That is, in each GOA unit, as long as the power supply terminal of any one of the GDL circuits is at the first potential, the leakage protection unit 111Q of any one of the GDL circuits can control the potential of the pull-down control node of any one of the GDL circuits to switch between the first potential and the second potential according to the clock signal of the upper-level GDL circuit 1111 in the GOA unit.

[0049] That is to say, in each GOA unit, when the power output terminal of the upper-level GDL circuit 1111 is at the first potential, the leakage protection unit 111Q of the upper-level GDL circuit 1111 controls the potential of the pull-down control node of the upper-level GDL circuit 1111 to switch between the first potential and the second potential according to the clock signal of the upper-level GDL circuit 1111; when the power output terminal of the lower-level GDL circuit 1112 is at the first potential, the leakage protection unit 111Q of the lower-level GDL circuit 1112 controls the potential of the pull-down control node of the lower-level GDL circuit 1112 to switch between the first potential and the second potential according to the clock signal of the upper-level GDL circuit 1111.

[0050] Wherein, the leakage protection unit 111Q may include a fourth switch unit T4 and a capacitor unit C. The control end of the fourth switch unit T4 constitutes the control end of the leakage protection unit 111Q. The fourth switch unit T4 may include a thin film transistor, or may include other devices or combinations that can achieve a switching effect, and no limitation is made thereto. When the fourth switch unit T4 is a thin film transistor, the gate of the thin film transistor constitutes the control end of the fourth switch unit T4.

[0051] Among them, the first end of the capacitor unit C is electrically connected to the control end of the fourth switch unit T4, and the second end of the capacitor unit C is electrically connected to the output end of the fourth switch unit T4. The control end of the fourth switch unit T4 is electrically connected to the clock signal end of the upper-level GDL circuit 1111 in the corresponding GOA unit.

[0052] In some embodiments,

[0053] Referring to Figure 1 and Figure 2 As shown, when the control end of the first switch unit T1 is at a high potential, the first switch unit T1 can be in a conducting state; when the control end of the first switch unit T1 is at a low potential, the first switch unit T1 can be in a cut-off state. Regarding the control of the conducting and cut-off states of the second switch unit T2, the third switch unit T3, and the fourth switch unit T4, reference can be made to the first switch unit T1, and details are not described herein.

[0054] In this embodiment, in each GOA unit, the potentials of the power supply end of the upper-level GDL circuit 1111 and the power supply end of the lower-level GDL circuit 1112 are interchanged between a high potential and a low potential. That is, when the power supply end of the upper-level GDL circuit 1111 is at a high potential, the power supply end of the lower-level GDL circuit 1112 is at a low potential; when the power supply end of the upper-level GDL circuit 1111 is at a low potential, the power supply end of the lower-level GDL circuit 1112 is at a high potential.

[0055] When the power supply end of the upper-level GDL circuit 1111 is at a high potential, when the clock signal of the upper-level GDL circuit 1111 is also at a high potential, the fourth switch unit T4 of the upper-level GDL circuit 1111 is in a conducting state, the pull-down control node of the upper-level GDL circuit 1111 is at a high potential, the pull-down control node of the lower-level GDL circuit 1112 shares the high potential with the pull-down control node of the upper-level GDL circuit 1111, and the first switch unit T1, the second switch unit T2, and the third switch unit T3 in both the upper-level GDL circuit 1111 and the lower-level GDL circuit 1112 are in a conducting state; when the clock signal of the upper-level GDL circuit 1111 is at a low potential, the fourth switch unit T4 of the upper-level GDL circuit 1111 is in a cut-off state, and under the action of the capacitor unit C, the upper-level GDL circuit 1111 makes the pull-down control node of the upper-level GDL circuit 1111 at a low potential, the pull-down control node of the lower-level GDL circuit 1112 shares the low potential with the pull-down control node of the upper-level GDL circuit 1111, and the first switch unit T1, the second switch unit T2, and the third switch unit T3 in both the upper-level GDL circuit 1111 and the lower-level GDL circuit 1112 are in a cut-off state. Thus, it is possible to avoid the first switch unit T1, the second switch unit T2, and the third switch unit T3 in the GOA unit from being in a cut-off state for a long time, thereby better avoiding the generation of leakage current.

[0056] When the power supply terminal of the lower-level GDL circuit 1112 is at a high potential, when the clock signal of the upper-level GDL circuit 1111 is also at a high potential, the fourth switch unit T4 of the lower-level GDL circuit 1112 is in a conducting state, the pull-down control node of the lower-level GDL circuit 1112 is at a high potential, the pull-down control node of the upper-level GDL circuit 1111 shares the high potential with the pull-down control node of the lower-level GDL circuit 1112, and the first switch unit T1, the second switch unit T2, and the third switch unit T3 of the upper-level GDL circuit 1111 in the upper-level GDL circuit 1111 and the lower-level GDL circuit 1112 are all in a conducting state; when the clock signal of the upper-level GDL circuit 1111 is at a low potential, the fourth switch unit T4 of the lower-level GDL circuit 1112 is in a cut-off state, and under the action of the capacitor unit C in the lower-level GDL circuit 1112, the pull-down control node of the lower-level GDL circuit 1112 is at a low potential, the pull-down control node of the upper-level GDL circuit 1111 shares the low potential with the pull-down control node of the lower-level GDL circuit 1112, and the first switch unit T1, the second switch unit T2, and the third switch unit T3 are all in a cut-off state. Thus, it is possible to avoid the first switch unit T1, the second switch unit T2, and the third switch unit T3 in the GOA unit from being in a cut-off state for a long time, thereby better avoiding the generation of leakage current.

[0057] It should be noted that regarding the setting of the GOA unit, in addition to the above-described implementation manner, other manners may also be adopted, which are not limited thereto, so as to better meet the different needs of users.

[0058] In this scan driving circuit, by providing a leakage protection unit 111Q composed of the fourth switch unit T4 and the capacitor unit C, and connecting the control terminal of the fourth switch unit T4 to the clock signal of the upper-level GDL circuit 1111 in the GOA unit, when the power supply terminal of the GDL circuit is at a high potential, it is possible to better control the first switch unit T1, the second switch unit T2, and the third switch unit T3 in the GOA unit to switch between a conducting state and a cut-off state according to the clock signal, thereby better avoiding the first switch unit T1, the second switch unit T2, and the third switch unit T3 from being in a cut-off state for a long time, so as to better avoid the generation of leakage current in the first switch unit T1, the second switch unit T2, and the third switch unit T3, and to better avoid abnormal phenomena such as flickering of the display panel based on this scan driving circuit, and improve the quality of the display panel.

[0059] In the third embodiment, a scan driving circuit is provided. Refer to Figure 1 and Figure 2As shown, in this scan driving circuit, the upper-level GDL circuit 1111 of the ((n + 1) / 2)-th GOA unit may include a first pull-up control module 111A, a first pull-up module 111B, a first pull-down control module 111C, a second pull-down control module 111D, a first pull-down module 111E, a first pull-down control node Qb(n), and a first pull-up control node Q(n). Wherein, 5 ≤ n ≤ 2M and n is an odd number.

[0060] The first pull-up control module 111A is electrically connected to the first pull-up control node Q(n) and receives the first start signal STV1. The first pull-up control module 111A is configured to pull up the potential of the first pull-up control node Q(n) to a first potential according to the first start signal STV1, where the first potential may be a high potential.

[0061] The first pull-up module 111B is electrically connected to the first pull-up control node Q(n), the output terminal of the n-th level transfer signal Carry(n), and the output terminal of the n-th level scan signal Gout(n), and receives the clock signal of the upper-level GDL circuit 1111, which may be denoted as the first clock signal CLK1. The first pull-up module 111B is configured to output the n-th level transfer signal Carry(n) and the n-th level scan signal Gout(n) with a high potential according to the first clock signal CLK1 when the potential of the first pull-up control node Q(n) is the first potential.

[0062] The first pull-down control module 111C is electrically connected to the first pull-up control node Q(n), is electrically connected to the first pull-down signal output circuit output1, and receives the reset signal Reset and the first low voltage potential VSSQ. The first pull-down control module 111C is configured to pull down the potential of the first pull-up control node Q(n) to a second potential according to the potential of the first pull-down signal output circuit output1, so that the first pull-up module 111B outputs the n-th level transfer signal Carry(n) and the n-th level scan signal Gout(n) with a low potential, where the second potential is a low potential. The first pull-down control module 111C is further configured to pull down the potential of the first pull-up control node Q(n) according to the reset signal Reset.

[0063] The second pull-down control module 111D is electrically connected to the first pull-down control node Qb(n) through the leakage protection unit 111Q and is configured to adjust the potential of the first pull-down control node Qb(n).

[0064] The first pull-down module 111E is electrically connected to the first pull-down control node Qb(n), the output terminal of the nth-stage carry signal Carry(n), and the output terminal of the nth-stage scan signal Gout(n), and is connected to the first low potential VSSQ and the second low potential VSSG. The first pull-down module 111E is used to pull down the potentials of the nth-stage carry signal Carry(n) and the nth-stage scan signal Gout(n) when the potential of the first pull-down control node Qb(n) is the first potential, output the nth-stage carry signal Carry(n) with a low potential, and turn off the nth-stage scan signal Gout(n).

[0065] The upper GDL circuit 1111 may further include a first pull-down maintenance module 111F. The first pull-down maintenance module 111F is electrically connected to the first pull-down control node Qb(n) and the first pull-up control node Q(n), and is connected to the first start signal STV1 and the first low potential VSSQ. The first pull-down maintenance module 111F is used to maintain the potentials of the first pull-down control node Qb(n) and the first pull-up control node Q(n) according to the first start signal STV1.

[0066] The lower GDL circuit 1112 in the (n + 1) / 2th GOA unit may include: a second pull-up control module 111J, a second pull-up module 111H, a third pull-down control module 111I, a fourth pull-down control module 111J, a second pull-down module 111K, a second pull-down control node Qb(n + 1), and a second pull-up control node Q(n + 1).

[0067] The second pull-up control module 111J is electrically connected to the second pull-up control node Q(n + 1), and is connected to the second start signal STV2. The second pull-up control module 111J is used to pull up the potential of the second pull-up control node Q(n + 1) to the first potential according to the second start signal STV2.

[0068] The second pull-up module 111H is electrically connected to the second pull-up control node Q(n + 1), the output terminal of the (n + 1)th-stage carry signal Carry(n + 1), and the output terminal of the (n + 1)th-stage scan signal Gout(n + 1), and is connected to the clock signal of the lower GDL circuit 1112. This clock signal can be denoted as the second clock signal CLK2. The second pull-up module 111H is used to output the (n + 1)th-stage carry signal Carry(n + 1) and the (n + 1)th-stage scan signal Gout(n + 1) with high potentials according to the second clock signal CLK2 when the potential of the second pull-down control node Qb(n + 1) is the first potential.

[0069] The third pull-down control module 111I is electrically connected to the second pull-down control node Qb(n + 1) and the second pull-up control node Q(n + 1), and is also electrically connected to the second pull-down signal output circuit output2, and is connected to the reset signal Reset and the first low voltage potential VSSQ. The third pull-down control module 111I is used to pull down the potential of the second pull-up control node Q(n + 1) to the second potential according to the potential of the second pull-down signal output circuit output2, so that the second pull-up module 111H outputs the low-level carry signal Carry(n + 1) and the (n + 1)-th stage scan signal Gout(n + 1). The third pull-down control module 111I is also used to pull down the potential of the second pull-up control node Q(n + 1) according to the reset signal Reset.

[0070] The fourth pull-down control module 111J is electrically connected to the second pull-down control node Qb(n + 1) through the leakage protection unit of the lower-level GDL circuit, and is connected to the power supply voltage VDD_o of the power supply terminal of the lower-level GDL circuit 1112. The fourth pull-down control module 111J is used to adjust the potential of the second pull-down control node Qb(n + 1).

[0071] The second pull-down module 111K is respectively electrically connected to the second pull-down control node Qb(n + 1), the output terminal of the (n + 1)-th stage carry signal Carry(n + 1), and the output terminal of the (n + 1)-th stage scan signal Gout(n + 1), and is connected to the first low voltage potential VSSQ and the second low voltage potential VSSG. The second pull-down module 111K is used to pull down the potentials of the (n + 1)-th stage carry signal Carry(n + 1) and the (n + 1)-th stage scan signal Gout(n + 1) when the potential of the second pull-down control node Qb(n + 1) is the first potential, output the (n + 1)-th stage carry signal Carry(n + 1) with a low potential, and turn off the (n + 1)-th stage scan signal Gout(n + 1).

[0072] The lower-level GDL circuit 1112 may further include a second pull-down maintenance module 111L. The second pull-down maintenance module 111L is electrically connected to the second pull-down control node Qb(n + 1) and the first pull-up control node Q(n), and is connected to the first start signal STV1 and the first low voltage potential VSSQ. The second pull-down maintenance module 111L is used to maintain the potential of the second pull-down control node Qb(n + 1) according to the first start signal STV1.

[0073] For example, the first pull-up control module 111A may include a fifth switch unit T5. The fifth switch unit T5 may be a transistor. The gate and source of the fifth switch unit T5 are connected to the first start signal STV1, and the drain is electrically connected to the first pull-up control node Q(n).

[0074] The first pull-up module 111B may include a sixth switch unit T6 and a seventh switch unit T7. The sixth switch unit T6 and the seventh switch unit T7 may be transistors respectively. Among them, the source of the sixth switch unit T6 is connected to the first clock signal CLK1, the gate of the sixth switch unit T6 is electrically connected to the first pull-up control node Q(n), and the drain of the sixth switch unit T6 is electrically connected to the output end of the nth-stage carry signal Carry(n). The source of the seventh switch unit T7 is connected to the first clock signal CLK(N), the gate of the seventh switch unit T7 is electrically connected to the first pull-up control node Q(n), and the drain of the seventh switch unit T7 is electrically connected to the output end of the nth-stage scan signal Gout(n).

[0075] The first pull-down control module 111C may include a ninth switch unit T9, a first switch unit T1, and an eighth switch unit T8. The ninth switch unit T9, the first switch unit T1, and the eighth switch unit T8 may be transistors respectively. Among them, the gate of the ninth switch unit T9 is connected to the reset signal Reset, the source of the ninth switch unit T9 is electrically connected to the first pull-up control node Q(n), and the drain of the ninth switch unit T9 is electrically connected to the first low-voltage terminal to receive the first low-voltage potential VSSQ. The gate of the first switch unit T1 is electrically connected to the second pull-up control node Q(n + 1), the source of the first switch unit T1 is electrically connected to the first pull-up control node Q(n), and the drain of the first switch unit T1 is electrically connected to the first low-voltage terminal to receive the first low-voltage potential VSSQ. The gate of the eighth switch unit T8 is connected to the first pull-down signal output circuit output1, the source of the eighth switch unit T8 is electrically connected to the first pull-up control node Q(n), and the drain of the eighth switch unit T8 is electrically connected to the first low-voltage terminal to receive the first low-voltage potential VSSQ.

[0076] The second pull-down control module 111D may include an eleventh switch unit T11, a tenth switch unit T10, and a twelfth switch unit T12. The eleventh switch unit T11, the tenth switch unit T10, and the twelfth switch unit T12 may be transistors respectively. Among them, the source and the gate of the eleventh switch unit T11 are connected to the power supply voltage VDD_O, and the drain of the eleventh switch unit T11 is connected to the gate of the tenth switch unit T10 and the source of the twelfth switch unit T12. The source of the tenth switch unit T10 is connected to the power supply voltage VDD_O, and the drain of the tenth switch unit T10 is connected to the first pull-down control node Qb(n) through the leakage protection unit 111Q. The gate of the twelfth switch unit T12 is electrically connected to the first pull-up control node Q(n), and the drain of the twelfth switch unit T12 is electrically connected to the first low-voltage terminal to receive the first low-voltage potential VSSQ.

[0077] Among them, the leakage protection unit 111Q includes a fourth switch unit T4 and a capacitor unit C. The fourth switch unit T4 can be a transistor. The gate of the fourth switch unit T4 is connected to the first clock signal CLK1. The source of the fourth switch unit is electrically connected to the drain of the tenth switch unit T10. The drain of the fourth switch unit T4 is electrically connected to the first pull-down control node Qb(n). The first end of the capacitor unit C is electrically connected to the gate of the fourth switch unit T4, and the second end of the capacitor unit C is electrically connected to the first pull-down control node Qb(n).

[0078] The first pull-down module 111E may include a second switch unit T2 and a third switch unit T3. The second switch unit T2 and the third switch unit T3 can be transistors respectively. Among them, the gate of the second switch unit T2 is electrically connected to the first pull-down control node Qb(n). The source of the second switch unit T2 is electrically connected to the output end of the nth stage carry signal Carry(n). The drain of the second switch unit T2 is electrically connected to the first low-voltage terminal to receive the first low-voltage potential VSSQ. The gate of the third switch unit T3 is electrically connected to the first pull-down control node Qb(n). The source of the third switch unit T3 is electrically connected to the output end of the nth stage scan signal Gout(n). The drain of the third switch unit T3 is electrically connected to the second low-voltage terminal to receive the second low-voltage potential VSSG.

[0079] The first pull-down maintenance module 111F may include a fourteenth switch unit T14, a thirteenth switch unit T13, and a fifteenth switch unit T15. The fourteenth switch unit T14, the thirteenth switch unit T13, and the fifteenth switch unit T15 can be transistors respectively. Among them, the gate of the fourteenth switch unit T14 is electrically connected to the first pull-up control node Q(n). The gate-source of the fourteenth switch unit T14 is electrically connected to the first pull-down control node Qb(n). The gate-drain of the fourteenth switch unit T14 is electrically connected to the first low-voltage terminal to receive the first low-voltage potential VSSQ. The gate of the thirteenth switch unit T13 is connected to the first start signal STV1. The drain of the thirteenth switch unit T13 is electrically connected to the first low-voltage terminal to receive the first low-voltage potential VSSQ. The source of the thirteenth switch unit T13 is electrically connected to the first pull-down control node Qb(n). The gate of the fifteenth switch unit T15 is electrically connected to the second pull-down control node Qb(n + 1). The source of the fifteenth switch unit T15 is electrically connected to the drain of the tenth switch unit T10. The drain of the fifteenth switch unit T15 is electrically connected to the first low-voltage terminal to receive the first low-voltage potential VSSQ.

[0080] The second pull-up control module 111J can refer to the above-mentioned first pull-up control module 111A, the second pull-up module 111H can refer to the above-mentioned first pull-up module 111B, the third pull-down control module 111I can refer to the above-mentioned first pull-down control module 111C, the fourth pull-down control module 111J can refer to the above-mentioned second pull-down control module 111D, the second pull-down module 111K can refer to the above-mentioned first pull-down module 111E, and the second pull-down maintenance module 111L can refer to the above-mentioned first pull-down maintenance module 111F. Details are not described herein.

[0081] It should be noted that when n is an odd number greater than or equal to 5 and less than or equal to 2M, the first start signal STV1 can be the stage transmission signal of the (n - 4)-th stage; the second start signal STV2 can be the stage transmission signal of the (n - 3)-th stage. When n is an odd number greater than or equal to 1 and less than or equal to 2M - 7, the first pull-down signal output circuit output1 can be the circuit corresponding to the stage transmission signal of the (n + 6)-th stage, that is, the potential of the first pull-down signal output circuit output1 can be the potential corresponding to the stage transmission signal of the (n + 6)-th stage; the second pull-down signal output circuit output2 can be the circuit corresponding to the stage transmission signal of the (n + 7)-th stage, that is, the potential of the second pull-down signal output circuit output2 can be the potential corresponding to the stage transmission signal of the (n + 7)-th stage.

[0082] In addition, it should be noted that the transistors in the GOA unit can be NMOS transistors or other transistors, which are not limited herein to better meet the different needs of users.

[0083] In this scanning drive circuit, refer to Figure 1 and Figure 3As shown, within the first time period t1, the power supply voltage VDD_o of the upper GDL circuit 1111 is at a high potential. When the first clock signal CLK1 is also at a high potential, the fourth switch unit T4 of the upper GDL circuit 1111 is in the conducting state, the first pull-down control node Qb(n) is at a high potential, the second pull-down control node Qb(n + 1) shares the high potential with the first pull-down control node Qb(n), and the first switch unit T1, the second switch unit T2, and the third switch unit T3 in both the upper GDL circuit 1111 and the lower GDL circuit 1112 are in the conducting state. When the first clock signal CLK1 is at a low potential, the fourth switch unit T4 of the upper GDL circuit 1111 is in the cut-off state. Under the action of the capacitor unit C in the upper GDL circuit 1111, the first pull-down control node Qb(n) is at a low potential, the second pull-down control node Qb(n + 1) shares the low potential with the first pull-down control node Qb(n), and the first switch unit T1, the second switch unit T2, and the third switch unit T3 in both the upper GDL circuit 1111 and the lower GDL circuit 1112 are in the cut-off state. Thus, when the fifth switch unit T5 is in the cut-off state, the states of the first switch unit T1, the second switch unit T2, and the third switch unit T3 in both the upper GDL circuit 1111 and the lower GDL circuit 1112 can be continuously switched between the conducting state and the cut-off state, which can avoid the first switch unit T1, the second switch unit T2, and the third switch unit T3 in the (n + 1) / 2-th GOA unit being in the cut-off state for a long time, thereby better avoiding the generation of leakage current. At the same time, the first pull-up control node Q(n), the n-th stage carry signal Carry(n), and the n-th stage scan signal Gout(n) will also be continuously maintained at a low potential state.

[0084] Within the second time period t2, the potential of the first pull-up control node Q(n) is at a high potential, and both the twelfth switch unit T12 and the fourteenth switch unit T14 are in the conducting state, thereby pulling the first pull-down control node Qb(n) down to a low potential. The second pull-down control node Qb(n + 1) shares the low potential with the first pull-down control node Qb(n), and the first switch unit T1, the second switch unit T2, and the third switch unit T3 in both the upper GDL circuit 1111 and the lower GDL circuit 1112 are in the cut-off state, and the n-th stage scan signal Gout(n) is normally output.

[0085] The third time period t3 can refer to the first time period t1, and this will not be elaborated here.

[0086] For the case where the power supply voltage VDD_o of the lower GDL circuit 1112 is at a high potential, it can refer to the case where the power supply voltage VDD_o of the upper GDL circuit 1111 is at a high potential as described above, and this will not be elaborated here.

[0087] In the scan driving circuit, leakage current generated by the first switching unit T1, the second switching unit T2, and the third switching unit T3 of the ((n + 1) / 2)-th GOA unit can be well avoided, so as to better avoid abnormal phenomena such as flickering in the display panel based on the scan driving circuit, and improve the quality of the display panel. In addition, the scan driving circuit can reduce the number of switching units in a single GDL circuit, which is more conducive to realizing a narrow border.

[0088] In the fourth embodiment, an array substrate is provided. Refer to Figure 4 As shown, the array substrate may include 2M scan lines 112 and a scan driving circuit 111. The first scan line may be denoted as G1, the second scan line may be denoted as G2, and so on. The 2M-th scan line may be denoted as G2M. The scan driving circuit 111 may be the scan driving circuit in the above embodiment. Wherein, M is a positive integer. The 2M scan lines 112 are connected to 2M GDL circuits in the scan driving circuit 111 in one-to-one correspondence, and each scan line 112 is connected to a plurality of pixel units P. Wherein, the pixel units P may be arranged in an array, and each scan line 112 can be electrically connected to the pixel units P in the corresponding row.

[0089] By providing the scan driving circuit 111 as described above, the array substrate can well avoid the generation of leakage current in the scan driving circuit 111, thereby well avoiding abnormal phenomena such as flickering in the display panel provided with the array substrate, and improving the quality of the array substrate.

[0090] In the fifth embodiment, a display panel is provided. Refer to Figure 5 As shown, the display panel may include a counter substrate 12, a liquid crystal layer 13, and an array substrate 11. The liquid crystal layer 13 is located between the counter substrate 12 and the array substrate 11. The array substrate 11 may be the array substrate in the above embodiment, and the array substrate 11 includes a substrate and a plurality of pixel units arranged in an array. The counter substrate 12 may be a color filter substrate.

[0091] The display panel includes the above array substrate 11, and the array substrate 11 includes a scan driving circuit as in the first embodiment or the second embodiment or the third embodiment. Therefore, the display panel can better avoid the phenomenon of flickering or other abnormal display of the screen caused by the leakage current generated by the scan driving circuit, and can better improve the quality of the display panel.

[0092] In the sixth embodiment, a display device is provided. The display device may be a display screen. The display device may also be a mobile phone, a computer, a television, a wearable device, etc. provided with a display screen, and this is not limited herein.

[0093] Among them, refer to Figure 6As shown, the display device can include a placement structure 2 and a display panel 1. The display panel 1 can include the display panel in the fifth embodiment above. The placement structure 2 can include a housing or a middle frame. The display panel 1 can be installed on the placement structure 2 to ensure reliable fixation of the display panel 1.

[0094] By providing the above display panel 1, the display device can well avoid phenomena such as flickering or other abnormal display of the screen, and improve the quality of the display device.

[0095] The specific embodiments described above further elaborate on the purpose, technical solutions, and beneficial effects of the present application. It should be understood that the above are only specific embodiments of the present application and are not used to limit the protection scope of the present application. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present application shall be included in the protection scope of the present application.

Claims

1. A scan driving circuit, the scan driving circuit includes M cascaded GOA units, each of the GOA units includes two-stage GDL circuits electrically connected to each other, each GDL circuit in the two-stage GDL circuits respectively includes a first switching unit, a second switching unit and a third switching unit, the start signal terminal of the corresponding GDL circuit is electrically connected to the first low voltage potential terminal of the corresponding GDL circuit through the first switching unit, the clock signal terminal of the corresponding GDL circuit is electrically connected to the first low voltage potential terminal of the corresponding GDL circuit through the second switching unit, the clock signal terminal of the corresponding GDL circuit is electrically connected to the second low voltage potential terminal of the corresponding GDL circuit through the third switching unit, and the control terminals of the first switching unit, the second switching unit and the third switching unit are respectively electrically connected to the pull-down control node of the corresponding GDL circuit, wherein, M is a positive integer, characterized in that in the two-stage GDL circuit, the pull-down control nodes of the two GDL circuits are electrically connected to each other; in each GDL circuit of the two-stage GDL circuit, a leakage protection unit is further included, the input end of the leakage protection unit is electrically connected to the power supply end of the corresponding GDL circuit, and the output end of the leakage protection unit is electrically connected to the pull-down control node of the corresponding GDL circuit; when the power supply end of the corresponding GDL circuit is at the first potential, the leakage protection unit controls the potential of the pull-down control node of the corresponding GDL circuit to switch between the first potential and the second potential; wherein, the first potential is the potential for controlling the first switch unit, the second switch unit, and the third switch unit to be in the on state; the second potential is the potential for controlling the first switch unit, the second switch unit, and the third switch unit to be in the off state; the control end of the leakage protection unit is electrically connected to the clock signal end of the GDL circuit of the upper level in the two-stage GDL circuit; when the power supply end of any GDL circuit in the two-stage GDL circuit is at the first potential, the leakage protection unit of the any GDL circuit controls the potential of the pull-down control node of the any GDL circuit to switch between the first potential and the second potential according to the clock signal of the GDL circuit of the upper level in the two-stage GDL circuit.

2. The scanning driving circuit according to claim 1, wherein each GDL circuit in the two-stage GDL circuit includes a first pull-down control module, and the leakage protection unit is electrically connected to the power supply end of the corresponding GDL circuit through the first pull-down control module of the corresponding GDL circuit.

3. The scanning driving circuit according to claim 1, wherein the leakage protection unit includes a fourth switch unit and a capacitor unit; the control end of the fourth switch unit constitutes the control end of the leakage protection unit, the input end of the fourth switch unit constitutes the input end of the leakage protection unit, and the output end of the fourth switch unit constitutes the output end of the leakage protection unit; the first end of the capacitor unit is electrically connected to the control end of the fourth switch unit, and the second end of the capacitor unit is electrically connected to the output end of the fourth switch unit.

4. The scanning drive circuit according to claim 3, wherein the fourth switch unit includes a transistor, and the gate of the transistor constitutes the control end of the fourth switch unit.

5. The scanning drive circuit according to any one of claims 1-4, characterized in that, each GDL circuit in the two-stage GDL circuit includes a fifth switch unit, and the first switch unit is electrically connected to the start signal end of the corresponding GDL circuit through the fifth switch unit of the corresponding GDL circuit.

6. The scanning driving circuit according to any one of claims 1-4, characterized in that, each GDL circuit in the two-stage GDL circuit includes a sixth switch unit, and the second switch unit is electrically connected to the clock signal end of the corresponding GDL circuit through the sixth switch unit of the corresponding GDL circuit.

7. The scanning drive circuit according to any one of claims 1-4, characterized in that, each GDL circuit in the two-stage GDL circuit includes a seventh switch unit, and the third switch unit is electrically connected to the clock signal end of the corresponding GDL circuit through the seventh switch unit of the corresponding GDL circuit.

8. An array substrate, characterized in that, The array substrate includes 2M scanning lines and the scanning driving circuit as described in any one of claims 1-7. The 2M GDL circuits in the scanning driving circuit are connected to the 2M scanning lines in one-to-one correspondence, and each scanning line is connected to a plurality of pixel units.

9. A display panel, characterized in that, The display panel includes a counter substrate, a liquid crystal layer, and the array substrate as described in claim 8. The liquid crystal layer is located between the counter substrate and the array substrate.

Images