Etching device
By incorporating liquid injection lines and rotating components into the etching apparatus, the problem of uneven etching depth between wafer edges and the central region was solved, thereby improving the uniformity and quality of wafer etching and protecting the inner wall of the reaction chamber.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- HC SEMITEK ZHEJIANG CO LTD
- Filing Date
- 2023-04-24
- Publication Date
- 2026-06-12
AI Technical Summary
In existing etching equipment, the uneven etching depth between the edge and middle regions of the wafer affects the etching quality.
The etching apparatus is equipped with a liquid injection pipeline and a rotating assembly. The etching solution is injected into the epitaxial tray through the liquid injection pipeline, and the epitaxial tray is driven to rotate by the rotating assembly, so that the etching solution is uniformly attached to the wafer surface. Combined with the anti-corrosion layer protecting the inner wall of the reaction chamber, the etching depth of each area is ensured to be consistent.
This achieves uniform etching depth across all areas of the wafer, improves etching quality, avoids corrosion of the reaction chamber wall, and enhances the reliability of the etching apparatus.
Smart Images
Figure CN116544141B_ABST
Abstract
Description
Technical Field
[0001] This disclosure relates to the field of optoelectronic manufacturing technology, and in particular to an etching apparatus. Background Technology
[0002] A wafer refers to a silicon chip used in the fabrication of silicon semiconductor integrated circuits. Due to its circular shape, a wafer typically includes multiple integrated light-emitting diodes (LEDs). LEDs are highly influential new products in the optoelectronics industry, characterized by their small size and low power consumption. During wafer fabrication, etching equipment is typically used to etch away the surface material of the wafer, forming the desired patterns on it.
[0003] In related technologies, etching apparatus typically includes a reaction chamber, an epitaxial tray, and a tray pressure plate. The epitaxial tray is disposed inside the reaction chamber and has multiple spaced grooves on it. The grooves are used to place the wafer, and the tray pressure plate is used to press against the surface of the wafer to prevent the wafer from moving in the grooves.
[0004] During the wafer etching process, plasma is introduced into the reaction chamber. As the tray plate presses down on the wafer, it blocks the edge area of the wafer. This results in the edge area of the wafer not being fully etched by the plasma, causing a difference in the uniformity of the etching depth between the middle area and the edge area of the wafer, thus affecting the etching quality of the wafer. Summary of the Invention
[0005] This disclosure provides an etching apparatus that can improve the uneven etching depth between the edge and middle regions of a wafer, thereby enhancing the etching quality of the wafer. The technical solution is as follows:
[0006] This disclosure provides an etching apparatus, which includes: a reaction chamber, an epitaxial tray, a liquid injection line, and a rotating assembly; the epitaxial tray is located inside the reaction chamber, the outlet end of the liquid injection line is located inside the reaction chamber and opposite to the epitaxial tray, and the liquid injection line is used to inject etching solution; the rotating assembly is located inside the reaction chamber and connected to the epitaxial tray, and is used to drive the epitaxial tray to rotate.
[0007] In one implementation of this disclosure, the injection pipeline includes at least two branch pipes, one end of which is inserted into the reaction chamber and extends into the reaction chamber, and the at least two branch pipes are arranged radially at intervals along the extended tray.
[0008] In another implementation of the present disclosure, the rotating assembly includes a locking member, a chassis, and a driving member. The extended tray is located on the chassis. The locking member is detachably connected to the extended tray and the chassis. The driving member is connected to the chassis and is used to drive the chassis to rotate.
[0009] In another implementation of the present disclosure, the locking member includes a pressure ring, the inner wall surface of the pressure ring has an annular groove, the outer tray and the chassis are located in the inner hole of the pressure ring, and the edge regions of the outer tray and the edge regions of the chassis are both inserted into the annular groove.
[0010] In another implementation of the present disclosure, the epitaxial tray has a plurality of grooves for mounting wafers; the etching apparatus further includes a positioning component located within the grooves for pressing the sidewalls of the wafer.
[0011] In another implementation of the present disclosure, the positioning component includes a pad and an elastic member, one end of the elastic member is connected to the pad, the other end of the elastic member abuts against the groove wall of the groove, and the side of the pad away from the elastic member abuts against the wafer.
[0012] In another implementation of the present disclosure, the inner wall of the reaction chamber is provided with an anti-corrosion layer.
[0013] In another implementation of the embodiments of this disclosure, the anti-corrosion layer includes an iridium alloy layer.
[0014] In another implementation of the present disclosure, the etching apparatus further includes an auxiliary pipeline, which is inserted into the side wall of the reaction chamber, with one end of the auxiliary pipeline located inside the reaction chamber, and the auxiliary pipeline is used to inject a cooling medium.
[0015] In another implementation of the present disclosure, the etching apparatus further includes a drain pipe, which is inserted into the bottom of the reaction chamber and has one end connected to the reaction chamber.
[0016] The beneficial effects of the technical solutions provided in this disclosure include at least the following:
[0017] This embodiment of the etching apparatus includes a liquid injection line on the reaction chamber. During etching, etching solution is injected into the epitaxial tray through the liquid injection line, allowing the etching solution to adhere easily to the wafer surface on the epitaxial tray. Furthermore, a rotating assembly is provided within the reaction chamber, which drives the epitaxial tray to rotate. By rotating the epitaxial tray, the etching solution can be evenly spread across the wafer surface. Thus, during etching, because the etching solution adheres evenly to the central and edge regions of the wafer, and the epitaxial tray maintains uniform contact with the plasma within the reaction chamber during rotation, the uniformity of etching depth across all regions of the wafer is maintained. This improves the problem of uneven etching depth between the edge and central regions of the wafer, thereby enhancing the etching quality. Attached Figure Description
[0018] To more clearly illustrate the technical solutions in the embodiments of this disclosure, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0019] Figure 1 This is a schematic diagram of the state of wafer etching provided by related technologies;
[0020] Figure 2 This is a schematic diagram of the structure of an etching apparatus provided in an embodiment of this disclosure;
[0021] Figure 3 This is a schematic diagram of the structure of an extended tray provided in an embodiment of this disclosure;
[0022] Figure 4 This is a partial structural schematic diagram of an extended tray provided in an embodiment of this disclosure.
[0023] The markings in the diagram are explained as follows:
[0024] 10. Reaction chamber; 101. Chamber body; 102. Quartz cover; 11. Anti-corrosion layer;
[0025] 20. Extended tray; 21. Groove;
[0026] 30. Injection pipeline; 31. Branch pipeline; 32. Main pipe;
[0027] 41. Locking component; 411. Annular groove; 42. Chassis; 43. Driving component;
[0028] 51. Inlet pipe; 52. Radio frequency source; 53. Auxiliary pipe; 54. Drain pipe;
[0029] 61. Pad; 62. Elastic element;
[0030] 70. Wafer; 71. Tray plate; 72. Photoresist. Detailed Implementation
[0031] To make the objectives, technical solutions, and advantages of this disclosure clearer, the embodiments of this disclosure will be described in further detail below with reference to the accompanying drawings.
[0032] Unless otherwise defined, the technical or scientific terms used herein shall have the ordinary meaning understood by one of ordinary skill in the art to which this disclosure pertains. The terms “first,” “second,” “third,” and similar terms used in this patent application specification and claims do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Similarly, the terms “an” or “a” and similar terms do not indicate a quantity limitation, but rather indicate the presence of at least one. The terms “comprising” or “including” and similar terms mean that the elements or objects preceding “comprising” or “including” encompass the elements or objects listed following “comprising” or “including” and their equivalents, and do not exclude other elements or objects. The terms “connected” or “linked” and similar terms are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. The terms “upper,” “lower,” “left,” “right,” “top,” and “bottom,” etc., are used only to indicate relative positional relationships, and these relative positional relationships may change accordingly when the absolute position of the described objects changes.
[0033] There are two processes for wafer etching: dry etching and wet etching. Dry etching is more widely used in the LED industry. Dry etching uses plasma etching, where plasma creates a photolithographic pattern through the photoresist and reacts with the surface material of the wafer to etch away the surface material.
[0034] Figure 1 This is a schematic diagram of the state of wafer etching provided by related technologies. For example... Figure 1 As shown, during the wafer etching process, when the tray plate 71 presses the wafer 70, it will block the edge area of the wafer 70 and block part of the photoresist 72 on the wafer 70. This will result in a difference in the uniformity of etching depth between the middle area and the edge area of the wafer 70, and the uniformity of etching depth will be affected by about 6%.
[0035] Therefore, this disclosure provides an etching apparatus. Figure 2 This is a schematic diagram of an etching apparatus provided in an embodiment of this disclosure. Figure 2 As shown, the etching apparatus includes: a reaction chamber 10, an epitaxial tray 20, a liquid injection line 30, and a rotating assembly.
[0036] like Figure 2 As shown, the epitaxial tray 20 is located inside the reaction chamber 10, and the outlet end of the injection line 30 is located inside the reaction chamber 10, with the outlet end of the injection line 30 opposite to the epitaxial tray 20. The injection line 30 is used to inject etching solution.
[0037] like Figure 2 As shown, the rotating assembly is located inside the reaction chamber 10 and is connected to the epitaxial tray 20 to drive the epitaxial tray 20 to rotate.
[0038] This embodiment of the etching apparatus includes a liquid injection line 30 on the reaction chamber 10. During etching, etching solution can be injected into the epitaxial tray 20 through the liquid injection line 30, allowing the etching solution to adhere easily to the surface of the wafer 70 in the epitaxial tray 20. Furthermore, a rotating assembly is provided within the reaction chamber 10, which drives the epitaxial tray 20 to rotate. By rotating the epitaxial tray 20, the etching solution can be evenly spread across the surface of the wafer 70. Thus, during etching, because the etching solution is evenly adhered to the central and edge regions of the wafer 70, and the epitaxial tray 20 can also uniformly contact the plasma within the reaction chamber 10 during rotation, the uniformity of etching depth across different regions of the wafer 70 is maintained, improving the problem of uneven etching depth between the edge and central regions of the wafer 70 and enhancing the etching quality of the wafer 70.
[0039] Optionally, the reaction chamber 10 includes a chamber 101 and a quartz cover 102. The chamber 101 has an open end, and the quartz cover 102 is press-fitted onto the open end of the chamber. The quartz cover can seal the chamber to form a reaction chamber 10 with a sealed inner cavity, facilitating etching operations within the reaction chamber 10.
[0040] Optionally, such as Figure 2 As shown, the inner wall of the reaction chamber 10 is provided with an anti-corrosion layer 11.
[0041] Because the etching apparatus is equipped with a liquid injection line 30, which injects etching solution into the reaction chamber 10, and the etching solution adheres to the epitaxial tray 20, which rotates under the drive of the rotating component, the etching solution can easily splash onto the inner wall of the reaction chamber 10, causing corrosion. Therefore, by providing an anti-corrosion layer 11 on the inner wall of the reaction chamber 10, the direct contact between the etching solution and the inner wall of the reaction chamber 10 can be effectively prevented, thereby improving the reliability of the reaction chamber 10.
[0042] Optionally, the anti-corrosion layer 11 includes an iridium alloy layer. Because iridium metal has a high melting point, high hardness, and corrosion resistance, an iridium alloy layer is used as the anti-corrosion layer 11, so that the iridium alloy layer forms a liner on the inner wall of the reaction chamber 10 to reduce the damage of the etching solution to the reaction chamber 10.
[0043] Optionally, such as Figure 2 As shown, the etching apparatus also includes an air inlet pipe 51, which is inserted into the side wall of the cavity. One end of the air inlet pipe 51 is located inside the cavity and is connected to the internal space of the cavity.
[0044] The intake pipe 51 is used to inject etching gas into the reaction chamber 10.
[0045] Optionally, such as Figure 2 As shown, radio frequency sources 52 are provided at the bottom of both the quartz cover and the cavity. When the radio frequency source 52 is working, the etching gas is first introduced into the reaction cavity 10 through the gas flow control system. Under the action of a high-frequency electric field (e.g., a frequency of 13.56 MHz), glow discharge is generated, causing gas molecules or atoms to ionize and form plasma, thereby achieving etching of the wafer 70 through plasma.
[0046] Optionally, such as Figure 2 As shown, the etching apparatus also includes an auxiliary pipe 53, which is inserted into the side wall of the reaction chamber 10, with one end of the auxiliary pipe 53 located inside the reaction chamber 10. The auxiliary pipe 53 is used to inject cooling medium.
[0047] For example, such as Figure 2 As shown, one end of the auxiliary conduit 53 is located below the epitaxial tray 20. This allows cooling medium to flow through the bottom of the wafer 70 during etching, preventing excessively high temperatures from causing deformation of the etched pattern and affecting etching uniformity.
[0048] As an example, the cooling medium can be an inert gas, and the temperature of the gas is lower than the temperature inside the reaction chamber 10.
[0049] Optionally, such as Figure 2 As shown, the etching apparatus also includes a drain pipe 54, which is inserted into the bottom of the reaction chamber 10, and one end of the drain pipe 54 is connected to the reaction chamber 10.
[0050] The drain pipe 54 is inserted into the bottom of the reaction chamber 10 at one end, and the drain pipe 54 does not protrude from the bottom surface of the reaction chamber 10. In this way, the etching liquid collected at the bottom of the reaction chamber 10 can flow out of the reaction chamber 10 through the drain pipe 54 for recycling, and prevent the etching solution from corroding the reaction chamber 10.
[0051] Optionally, such as Figure 2 As shown, the injection line 30 includes at least two branch lines 31, one end of which is inserted into the reaction chamber 10 and extends into the reaction chamber 10. The at least two branch lines 31 are arranged at radial intervals along the outer tray 20.
[0052] In the above implementation, by setting multiple diversion pipes 31, the etching solution can be sprayed onto the epitaxial tray 20 from different positions, so that the etching solution can be more evenly attached to the epitaxial tray 20.
[0053] For example, such as Figure 2 As shown, the injection pipeline 30 includes three branch pipes 31 and one main pipe 32. The main pipe 32 is located outside the reaction chamber 10. One end of each of the three branch pipes 31 is inserted into the quartz cap, and the other end of each of the three branch pipes 31 is connected to the wall of the main pipe 32, so that each branch pipe 31 is opposite to the epitaxial tray 20, allowing the etching solution to be injected into various areas of the epitaxial tray 20 through different branch pipes 31.
[0054] The three distribution channels 31 are arranged radially from one side of the epitaxial tray 20 to the other side. This allows the distribution channels 31 to be more evenly distributed above the epitaxial tray 20, so that the etching solution can be evenly injected into each area of the epitaxial tray 20 through the distribution channels 31.
[0055] Optionally, such as Figure 2 As shown, the rotating assembly includes a locking member 41, a chassis 42, and a driving member 43, with the extended tray 20 located on the chassis 42.
[0056] The locking member 41 is detachably connected to the outer tray 20 and the chassis 42, and the driving member 43 is connected to the chassis 42 and is used to drive the chassis 42 to rotate.
[0057] In this embodiment of the present disclosure, the driving component 43 may be disposed outside the reaction chamber 10, and the driving component 43 is connected to the chassis 42 via a rotating shaft that is movably inserted into the bottom of the chamber.
[0058] For example, the driving component 43 can be a motor, which drives the rotating shaft to rotate, and the rotating shaft drives the chassis 42 to rotate together. Since the chassis 42 is connected to the epitaxial tray 20 through the locking component 41, the chassis 42 can also drive the epitaxial tray 20 to rotate together, thereby achieving the purpose of driving the wafer 70 set on the epitaxial tray 20 to rotate.
[0059] For example, such as Figure 2 As shown, the locking member 41 includes a pressure ring, the inner wall surface of which has an annular groove 411. The outer tray 20 and the base plate 42 are located in the inner hole of the pressure ring, and the edge regions of the outer tray 20 and the edge regions of the base plate 42 are both inserted into the annular groove 411.
[0060] The width of the annular groove 411 in the axial direction of the extended tray 20 can be equal to the sum of the thickness of the extended tray 20 and the thickness of the chassis 42. When the edge areas of both the extended tray 20 and the chassis 42 are inserted into the annular groove 411, their edges will abut against the groove wall of the annular groove 411, thus preventing the extended tray 20 and chassis 42 from becoming loose during rotation and improving reliability.
[0061] Figure 3 This is a schematic diagram of the structure of an extended tray 20 provided in an embodiment of this disclosure. For example... Figure 3 As shown, the epitaxial tray 20 has multiple recesses 21 for mounting the wafer 70.
[0062] Figure 4 This is a partial structural schematic diagram of an extended tray 20 provided in an embodiment of this disclosure. For example... Figure 4 As shown, the etching apparatus also includes a positioning component located within the groove 21, which is used to press the sidewalls of the wafer.
[0063] See Figure 1 In related technologies, when fixing the wafer 70 in the groove 21, a tray plate is set to mount the wafer 70. However, this causes the tray plate to block the edge area of the wafer 70, which will affect the uniformity of the etching depth.
[0064] This embodiment of the present disclosure provides a positioning component and installs the positioning component in the groove 21. By having the positioning component abut against the sidewall of the wafer 70 and the groove wall of the groove 21, the edge area of the wafer 70 is prevented from being blocked, thereby ensuring that all areas on the surface of the wafer 70 can be etched uniformly, thus improving the uniformity of the etching depth.
[0065] Optionally, such as Figure 4 As shown, the positioning assembly includes a pad 61 and an elastic member 62. One end of the elastic member 62 is connected to the pad 61, and the other end of the elastic member 62 abuts against the groove wall of the groove 21. The side of the pad 61 away from the elastic member 62 abuts against the wafer 70.
[0066] Among them, the pad 61 can be an arc-shaped plate, and the inner side of the arc-shaped plate is attached to the side wall surface of the wafer 70. If the contact area between the wafer 70 and the pad 61 is too small, the pad 61 will apply too much pressure to the wafer 70 and damage the wafer 70. It can also prevent the wafer 70 from shaking relative to the pad 61 and improve reliability.
[0067] The elastic element 62 can be a spring, with one end connected to the outer side of the pad 61 and the other end connected to the side wall of the groove 21. In this way, after the wafer 70 abuts against the pad 61, the elastic force applied by the spring can make the wafer 70 more stably fixed in the groove 21, so as to prevent the wafer 70 from loosening.
[0068] Optionally, such as Figure 4 As shown, multiple springs can be installed on the pad 61, and these springs are spaced apart along the length of the pad 61. By installing multiple springs, the pad 61 can be provided with greater elasticity, allowing it to more stably abut against the wafer 70. This also improves the reliability of the positioning assembly.
[0069] This disclosure provides a method for etching a wafer 70 using an etching apparatus, the method comprising the following steps:
[0070] The first step is to transfer the photoresist patterned wafer 70 to the groove 21 of the epitaxial tray 20 in the reaction chamber 10 of the etching apparatus, and fix the epitaxial tray 20 and the chassis 42 by a pressure ring.
[0071] For example, wafer 70 may include a substrate and an n-type layer, a multiple quantum well layer and a p-type layer sequentially formed on the substrate.
[0072] Optionally, the substrate may be a sapphire substrate, a silicon substrate, or a silicon carbide substrate. The substrate may be a flat substrate or a patterned substrate.
[0073] As an example, in this embodiment of the disclosure, the substrate is a sapphire substrate. Sapphire substrates are a commonly used substrate, with mature technology and low cost. Specifically, it can be a patterned sapphire substrate or a flat sapphire substrate.
[0074] Optionally, the n-type layer can be an n-type GaN layer. The thickness of the n-type layer is from 0.5 μm to 3 μm.
[0075] In this layer, the dopant is silane, and the concentration of the silane dopant can be 1×10⁻⁶. 18 cm -3 Up to 1×10 19 cm -3 .
[0076] Among them, the multi-quantum well layer includes alternating layers of multi-quantum well layers and multi-quantum barrier layers.
[0077] As an example, quantum well layers include In x Ga 1-x With N layers, 0.2 ≤ x ≤ 0.5, and the proportion of In component in each quantum well layer being equal, setting the proportion of In component in each quantum well layer can better achieve industrial mass production.
[0078] Optionally, the quantum barrier layer includes either a GaN layer or an AlGaN layer. That is, the quantum barrier layer in various types of multi-quantum-well layers can be either a GaN layer or an AlGaN layer.
[0079] Optionally, the thickness of the p-type layer is 50 nm to 100 nm.
[0080] Among them, the dopant of the p-type layer is magnesium cyclopentadienyl.
[0081] Among them, the p-type layer may include a low-temperature p-type AlGaN layer, a p-type electron blocking layer, a high-temperature p-type GaN layer, and a p-type ohmic contact layer that are sequentially stacked on the multi-quantum well layer.
[0082] Exemplarily, the p-type electron blocking layer may be a p-type Al k Ga 1-k N, 0.2 < k < 0.5 layer, and the thickness of the p-type electron blocking layer may be 20 nm to 100 nm.
[0083] In the embodiments of the present disclosure, both the low-temperature p-type AlGaN layer and the high-temperature p-type GaN layer are Mg-doped.
[0084] The Mg doping concentration of the low-temperature p-type AlGaN layer is 5×10 19 cm -3 to 1×10 21 cm -3 and the Mg doping concentration of the high-temperature p-type GaN layer is 5×10 19 cm -3 to 1×10 21 cm -3 .
[0085] Among them, the thickness of the low-temperature p-type AlGaN layer may be 50 nm to 100 nm. For example, the thickness of the low-temperature p-type AlGaN layer may be 80 nm.
[0086] Among them, the thickness of the high-temperature p-type GaN layer may be 100 nm to 200 nm. For example, the thickness of the high-temperature p-type GaN layer may be 150 nm.
[0087] Optionally, the thickness of the p-type ohmic contact layer may be 10 nm to 50 nm. As an example, in the embodiments of the present disclosure, the thickness of the p-type ohmic contact layer is 20 nm.
[0088] Optionally, a buffer layer and an undoped GaN layer are further included between the substrate and the n-type layer, and the buffer layer and the undoped GaN layer are sequentially stacked on the substrate.
[0089] In the embodiments of the present disclosure, the buffer layer may be an AlN layer, and the AlN layer is an AlN layer grown at a temperature between 400 °C and 800 °C.
[0090] Among them, the thickness of the buffer layer may be 10 nm to 50 nm. Exemplarily, the thickness of the buffer layer may be 20 nm.
[0091] By setting the thickness of the buffer layer within the above range, it is possible to avoid the buffer layer being too thin, which would reduce the crystal quality of the epitaxial layer grown on a thinner buffer layer; it is also possible to avoid the buffer layer being too thick, which would increase the absorption of light by the buffer layer and thus reduce the luminescence efficiency of the epitaxial wafer.
[0092] In this embodiment, an undoped GaN layer is grown between the buffer layer and the n-type layer. Compared to the substrate, since the crystal structure of the undoped GaN layer is similar to that of the n-type layer, the crystal quality of the subsequent epitaxial layer can be improved by setting the undoped GaN layer as a transition layer.
[0093] The thickness of the undoped GaN layer is 0.5 μm to 3 μm. For example, the thickness of the undoped GaN layer is 2 μm.
[0094] The second step involves spraying an etching solution onto the surface of the wafer 70 through the injection pipeline 30, and driving the epitaxial tray 20 to rotate via a rotating assembly, so that the etching solution is evenly adhered to the surface of the wafer 70.
[0095] The third step involves introducing etching gas into the reaction chamber 10 through the inlet pipe 51, and driving the epitaxial tray 20 to rotate through the rotating assembly, so that the plasma on the surface of the wafer 70 can uniformly etch the surface of the wafer 70.
[0096] During the etching process, a cooling medium is injected into the bottom of the epitaxial tray 20 through the auxiliary pipe 53 to prevent the etching pattern from deforming due to excessive temperature during the etching process, thus affecting the etching uniformity.
[0097] The fourth step is to measure the etching data after the etching process is completed to confirm the uniformity of the 70 etching depth on the wafer.
[0098] The above is not intended to limit this disclosure in any way. Although this disclosure has been disclosed above through embodiments, it is not intended to limit this disclosure. Any person skilled in the art can make some modifications or alterations to the above-disclosed technical content to create equivalent embodiments without departing from the scope of the technical solution of this disclosure. Any simple modifications, equivalent changes and alterations made to the above embodiments based on the technical essence of this disclosure without departing from the content of the technical solution of this disclosure shall still fall within the scope of the technical solution of this disclosure.
Claims
1. An etching apparatus, characterized in that, The etching apparatus includes: a reaction chamber (10), an epitaxial tray (20), a liquid injection line (30), and a rotating assembly; The epitaxial tray (20) is located inside the reaction chamber (10), the outlet end of the injection line (30) is located inside the reaction chamber (10), and the outlet end is opposite to the epitaxial tray (20). The injection line (30) is used to inject etching solution. The rotating assembly is located inside the reaction chamber (10) and connected to the epitaxial tray (20) for driving the epitaxial tray (20) to rotate. The rotating assembly includes a locking member (41), a chassis (42), and a driving member (43). The epitaxial tray (20) is located on the chassis (42). The locking member (41) is detachably connected to the epitaxial tray (20) and the chassis (42). The driving member (43) is connected to the chassis (42) and is used to drive the chassis (42) to rotate. The locking member (41) includes a pressure ring. The inner wall surface of the pressure ring has an annular groove (411). The epitaxial tray (20) and the chassis (42) are located in the inner hole of the pressure ring, and the edge regions of the epitaxial tray (20) and the edge regions of the chassis (42) are inserted into the annular groove (411).
2. The etching apparatus according to claim 1, characterized in that, The injection line (30) includes at least two branch pipes (31), one end of which is inserted into the reaction chamber (10) and extends into the reaction chamber (10). The at least two branch pipes (31) are arranged at radial intervals along the outer tray (20).
3. The etching apparatus according to claim 1 or 2, characterized in that, The epitaxial tray (20) has multiple grooves (21) for mounting wafers. The etching apparatus further includes a positioning component located within the groove (21) for pressing the sidewalls of the wafer.
4. The etching apparatus according to claim 3, characterized in that, The positioning component includes a pad (61) and an elastic element (62). One end of the elastic element (62) is connected to the pad (61), and the other end of the elastic element (62) abuts against the groove wall of the groove (21). The side of the pad (61) away from the elastic element (62) abuts against the wafer.
5. The etching apparatus according to claim 1 or 2, characterized in that, The inner wall of the reaction chamber (10) is provided with an anti-corrosion layer (11).
6. The etching apparatus according to claim 5, characterized in that, The anti-corrosion layer (11) includes an iridium alloy layer.
7. The etching apparatus according to claim 1 or 2, characterized in that, The etching apparatus also includes an auxiliary pipe (53), which is inserted into the side wall of the reaction chamber (10) and one end of the auxiliary pipe (53) is located inside the reaction chamber (10). The auxiliary pipe (53) is used to inject cooling medium.
8. The etching apparatus according to claim 1 or 2, characterized in that, The etching apparatus also includes a drain pipe (54), which is inserted into the bottom of the reaction chamber (10) and has one end connected to the reaction chamber (10).