Modulation device and system for terahertz waves

Abstract

The application relates to a terahertz wave modulation device and system, comprising a plurality of resonance units arranged in a two-dimensional array; each resonance unit comprises a modulation unit and a dielectric layer, and the modulation unit is fixed on the first surface of the dielectric layer; the modulation unit is used for generating deformation under the condition of being loaded with a preset voltage, so as to perform phase modulation on the incident terahertz wave. The input voltage of each resonance unit can be set in the device, so that the phase modulation of the terahertz wave reflected by each resonance unit can be realized. In addition, since the resonance units are arranged in a two-dimensional array, different preset voltages are loaded on each resonance unit, so that the phases of the terahertz waves reflected by each resonance unit on the two-dimensional array are different. Compared with the prior art, the phase of the terahertz wave reflected by each resonance unit can be flexibly modulated according to the size of the preset voltage loaded on each resonance unit, that is, the flexibility of terahertz wave modulation is improved.

Description

Technical Field

[0001] This application relates to the field of electromagnetic functional device technology, and in particular to a modulation device and system for terahertz waves. Background Technology

[0002] Terahertz waves (THz waves) are electromagnetic waves with frequencies in the range of 0.1THz to 10THz. This band lies between millimeter waves and infrared light, so terahertz communication integrates the advantages of microwave communication and optical communication, and has good confidentiality and anti-interference capabilities in the field of communication.

[0003] However, high-performance terahertz communication, radar, and imaging applications require terahertz waves with specific phases, necessitating phase modulation of these waves. Currently, phase modulation of terahertz waves is primarily achieved through the reflection and refraction of lenses.

[0004] However, existing modulation techniques suffer from low flexibility. Summary of the Invention

[0005] Therefore, it is necessary to provide a terahertz wave modulation device and system that can improve the flexibility of terahertz wave modulation technology in response to the above-mentioned technical problems.

[0006] In a first aspect, this application provides a terahertz wave modulation device. The terahertz wave modulation device includes multiple resonant units arranged in a two-dimensional array; each resonant unit includes a modulation unit and a dielectric layer, the modulation unit being fixed to a first surface of the dielectric layer;

[0007] The modulation unit is used to generate deformation when a preset voltage is applied in order to modulate the phase of the incident terahertz wave.

[0008] This device utilizes the dependence between the input voltage of the resonant unit and the phase of the reflected terahertz wave to set the input voltage of each resonant unit, thereby achieving phase modulation of the terahertz wave reflected by each resonant unit. Furthermore, since the resonant units are arranged in a two-dimensional array, applying different preset voltages to each resonant unit results in different phases of the terahertz waves reflected by each resonant unit in the two-dimensional array. Compared with existing technologies, this device can flexibly modulate the phase of the terahertz wave reflected by each resonant unit based on the magnitude of the preset voltage applied to each resonant unit, thus improving the flexibility of terahertz wave modulation.

[0009] In one embodiment, the resonant unit further includes a back electrode, which is fixed to the second surface of the dielectric layer, with the first surface facing away from the second surface.

[0010] The back electrode is used for electrical connection to external circuitry.

[0011] It should be noted that, since the first surface of the resonant unit needs to receive the incident terahertz wave and reflect the received terahertz wave, a high-density interconnect circuit cannot be designed on the first surface of the resonant unit. Therefore, a back electrode is set on the second surface of the resonant unit (the second surface is opposite to the first surface), and a voltage is applied to the back electrode to deform the modulation unit on the resonant unit, thereby modulating the phase of the incident terahertz wave.

[0012] In one embodiment, the resonant unit further includes a connecting component for connecting the modulation unit and the back electrode, thereby fixing the modulation unit to a first surface of the dielectric layer and fixing the back electrode to a second surface of the dielectric layer.

[0013] The connecting component is made of copper-plated silicon. The connecting component can pass through the dielectric layer to connect the modulation unit and the back electrode, so that the modulation unit is fixed on one side of the dielectric layer and the back electrode is fixed on the other side of the dielectric layer.

[0014] It should be noted that in the above embodiment, the external control circuit is connected to the back electrode, and the back electrode is connected to the modulation unit through the connecting component. That is, the voltage applied by the external control circuit can be applied to the modulation unit through the back electrode and the connecting component to cause the modulation unit to deform. This deformation can modulate the incident terahertz wave incident on the first surface of the dielectric layer.

[0015] In one embodiment, the resonant unit further includes a first insulating layer disposed between a first surface of the dielectric layer and a back electrode.

[0016] In one embodiment, the resonant unit further includes a second insulating layer disposed between the second surface of the dielectric layer and the modulation unit.

[0017] The first and second insulating layers are both made of silicon nitride material, which can insulate the dielectric layer from the back electrode and the dielectric layer from the modulation unit, so that the voltage applied between the dielectric layer and the back electrode (or modulation unit) by the control circuit will not affect each other.

[0018] In one embodiment, the resonant unit further includes a surface metal structure disposed between the modulation unit and the dielectric layer.

[0019] It should be noted that the above-mentioned surface metal structure creates a certain gap between the modulation unit and the dielectric layer. The size of this gap changes after a preset voltage is applied to the resonant unit, which in turn changes the resonant characteristics of the resonant unit.

[0020] In one embodiment, the modulation unit is a cantilever beam structure.

[0021] In one embodiment, the modulation unit is a cross-shaped cantilever beam structure.

[0022] The modulation unit is made of a deformable metallic material, such as aluminum. After a preset voltage is applied to the resonant unit, the modulation unit deforms, altering its resonant characteristics. When an incident terahertz wave is incident on the resonant unit, the phase of the reflected terahertz wave is modulated based on the deformed resonant unit. Furthermore, the aforementioned surface metal structure can be disposed at the four ends of the cross-shaped cantilever beam modulation unit in this embodiment, so that the modulation unit is not directly connected to the dielectric layer, but rather has a certain gap. The size of this gap changes after a preset voltage is applied to the resonant unit, thereby altering the resonant characteristics of the resonant unit.

[0023] In one embodiment, the material of the dielectric layer is silicon crystal.

[0024] Secondly, this application also provides a terahertz wave modulation system. The terahertz wave modulation system includes a terahertz wave modulation device and a control circuit as described in claim , wherein the control circuit is connected to the terahertz wave modulation device;

[0025] The control circuit is used to determine the preset voltage to be applied to each resonant unit according to the arrangement position of each resonant unit in the modulation device, and to apply each preset voltage to each resonant unit accordingly, so as to control each modulation unit to perform phase modulation on the input terahertz wave based on its own preset voltage.

[0026] The modulation unit is made of a deformable metallic material, such as aluminum. After a preset voltage is applied to the resonant unit, the modulation unit deforms, altering its resonant characteristics. When an incident terahertz wave is incident on the resonant unit, the phase of the reflected terahertz wave is modulated based on the deformed resonant unit. Furthermore, the aforementioned surface metal structure can be disposed at the four ends of the cross-shaped cantilever beam modulation unit in this embodiment, so that the modulation unit is not directly connected to the dielectric layer, but rather has a certain gap. The size of this gap changes after a preset voltage is applied to the resonant unit, thereby altering the resonant characteristics of the resonant unit.

[0027] The aforementioned terahertz wave modulation device and system include multiple resonant units arranged in a two-dimensional array. Each resonant unit includes a modulation unit and a dielectric layer, with the modulation unit fixed to the first surface of the dielectric layer. The modulation unit is used to generate deformation under a preset voltage to modulate the phase of the incident terahertz wave. This device utilizes the dependence between the input voltage of the resonant unit and the phase of the reflected terahertz wave to set the input voltage of each resonant unit, thereby achieving phase modulation of the terahertz wave reflected by each resonant unit. Furthermore, since the resonant units are arranged in a two-dimensional array, applying different preset voltages to each resonant unit results in different phases of the terahertz waves reflected by each resonant unit in the two-dimensional array. Compared with existing technologies, this allows for flexible modulation of the phase of the terahertz waves reflected by each resonant unit based on the magnitude of the preset voltage applied to each resonant unit, thus improving the flexibility of terahertz wave modulation. Attached Figure Description

[0028] The accompanying drawings are used to provide a further understanding of the technical solutions of this application or the prior art, and constitute a part of the specification. The drawings illustrating embodiments of this application, together with the embodiments of this application, are used to explain the technical solutions of this application, but do not constitute a limitation on the technical solutions of this application.

[0029] Figure 1 This is a schematic diagram of the structure of a terahertz wave modulation device in one embodiment;

[0030] Figure 2 This is a schematic diagram of the resonant unit in one embodiment;

[0031] Figure 3 This is a schematic diagram of the resonant unit after deformation in another embodiment;

[0032] Figure 4 This is a schematic diagram of the structure of a terahertz wave modulation system in one embodiment;

[0033] Figure 5 This is a schematic diagram of the process for modulating an incident terahertz wave in one embodiment;

[0034] Figure 6 This is a schematic diagram illustrating terahertz beam control in one embodiment;

[0035] Figure 7 Phase distribution configured for beam deflection phase;

[0036] Figure 8 Phase distribution configured for the focusing function phase;

[0037] Figure 9 The phase distribution that generates the phase configuration for angular momentum;

[0038] Figure 10 The simulation results of the voltage-phase modulation curve are shown in the figure.

[0039] Explanation of reference numerals in the attached figures:

[0040] Terahertz wave modulation device 01; Resonant unit 010;

[0041] Modulation unit 0100; Dielectric layer 0101;

[0042] Back electrode 0102; Connecting component 0103;

[0043] First insulating layer 0104; Second insulating layer 0105;

[0044] Surface metallic structure 0106; terahertz wave modulation system 10;

[0045] Control circuit 02. Detailed Implementation

[0046] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0047] Terahertz waves are a new type of electromagnetic spectrum that lies between photonics and electronics, typically referring to electromagnetic radiation with frequencies ranging from 0.1 THz to 10 THz. In recent years, thanks to the rapid development of terahertz wave sources and detection technologies, terahertz waves have shown great promise in fields such as imaging, spectrum analysis, electronic information, and radar positioning. However, the development of intermediate devices for modulating terahertz waves has been slow, yet these devices are crucial for expanding the applications of terahertz waves, such as information encryption, transmission, and storage, terahertz beam shaping, focusing, and imaging. Currently, phase modulation of terahertz waves is mainly achieved through the reflection and refraction of lenses.

[0048] After introducing the background technology of the terahertz wave modulation device provided in the embodiments of this application, the following section focuses on the terahertz wave modulation device proposed in this solution.

[0049] In one embodiment, such as Figure 1As shown, a terahertz wave modulation device 01 is provided. The terahertz wave modulation device 01 includes multiple resonant units 010, which are arranged in a two-dimensional array. Each resonant unit 010 includes a modulation unit 0100 and a dielectric layer 0101. The modulation unit 0100 is fixed on the first surface of the dielectric layer 0101. The modulation unit 0100 is used to generate deformation when a preset voltage is applied to modulate the phase of the input terahertz wave.

[0050] The aforementioned terahertz wave modulation device 01 can perform two-dimensional modulation of the phase of the incident terahertz wave. It should be noted that the surface of the terahertz wave modulation device 01 is a metasurface structure, which includes multiple resonant units 010 arranged in a two-dimensional array. Each resonant unit 010 can undergo electromagnetic resonance under the action of the incident terahertz wave and generate reflected terahertz waves, thereby achieving modulation of the amplitude and phase of the terahertz wave. Since this scheme can control the state of each resonant unit 010 in the metasurface structure to be different from each other, each resonant unit 010 in the two-dimensional array of the metasurface structure can be arbitrarily controlled to be in a different state. Therefore, the aforementioned terahertz wave modulation device 01 can perform two-dimensional modulation of the phase of the incident terahertz wave.

[0051] Each resonant unit 010 includes a modulation unit 0100 and a dielectric layer 0101. The modulation unit 0100 is fixed to the first surface of the dielectric layer 0101. The dielectric layer 0101 is made of silicon crystal. The modulation unit 0100 can be a cross-shaped structure of metal material or a strip-shaped structure of metal material. The structure of the modulation unit 0100 is not limited in this embodiment. The modulation unit 0100 can deform when a voltage is applied to the resonant unit 010. The magnitude of the deformation of the modulation unit 0100 varies depending on the voltage applied to the resonant unit 010. Furthermore, the greater the voltage applied to the resonant unit 010, the greater the deformation of the modulation unit 0100.

[0052] The working principle of the terahertz wave modulation device 01 provided in this embodiment is as follows: When it is necessary to perform two-dimensional modulation on the phase of the incident terahertz wave, since the amplitude and phase of the reflected terahertz wave are strongly dependent on the input voltage of the resonant unit 010, a preset voltage can be applied to multiple resonant units 010 in the terahertz wave modulation device 01. Each resonant unit 010 will deform after being loaded with the preset voltage. This deformation will change the electromagnetic resonance characteristics of each resonant unit 010. That is, if the preset voltages applied to each resonant unit 010 are different, the deformation of the modulation unit 0100 in each resonant unit 010 will be different, thereby modulating the phase of the incident terahertz wave to different degrees, so as to achieve different phase modulation of the incident terahertz wave.

[0053] The terahertz wave modulation device provided in this application includes multiple resonant units arranged in a two-dimensional array. Each resonant unit includes a modulation unit and a dielectric layer, with the modulation unit fixed to a first surface of the dielectric layer. The modulation unit is used to deform under a preset voltage to modulate the phase of the incident terahertz wave. This device utilizes the dependence between the input voltage of the resonant unit and the phase of the reflected terahertz wave to set the input voltage of each resonant unit, thereby achieving phase modulation of the terahertz wave reflected by each resonant unit. Furthermore, since the resonant units are arranged in a two-dimensional array, applying different preset voltages to each resonant unit results in different phases of the terahertz waves reflected by each resonant unit in the two-dimensional array. Compared with existing technologies, the phase of the terahertz wave reflected by each resonant unit can be flexibly modulated according to the magnitude of the preset voltage applied to each resonant unit, thus improving the flexibility of terahertz wave modulation.

[0054] In one embodiment, such as Figure 2 As shown, a terahertz wave modulation device is provided. The resonant unit 010 further includes a back electrode 0102, which is fixed on the second surface of the dielectric layer 0101, with the first surface facing away from the second surface. The back electrode 0102 is used for fixed connection with an external circuit.

[0055] The back electrode 0102 is a metallic structure and is disposed on the surface of the dielectric layer 0101 opposite to the modulation unit 0100, for electrical connection with external circuitry. It should be noted that since the first surface of the resonant unit 010 needs to receive the incident terahertz wave and reflect it, a high-density interconnect circuit cannot be designed on the first surface. Therefore, the back electrode 0102 is disposed on the second surface of the resonant unit 010 (opposite to the first surface). A voltage is applied to the back electrode 0102 to deform the modulation unit on the resonant unit 010, thereby modulating the phase of the incident terahertz wave.

[0056] In one embodiment, such as Figure 2 As shown, the resonant unit 010 further includes a connecting component 0103, which is used to connect the modulation unit 0100 and the back electrode 0102, so that the modulation unit 0100 is fixed on the first surface of the dielectric layer 0101, and the back electrode 0102 is fixed on the second surface of the dielectric layer 0101.

[0057] The connecting component 0103 is made of copper-plated silicon. The connecting component 0103 can pass through the dielectric layer 0101 and connect the modulation unit 0100 and the back electrode 0102, so that the modulation unit 0100 is fixed on one side of the dielectric layer 0101 and the back electrode 0102 is fixed on the other side of the dielectric layer 0101.

[0058] It should be noted that in the above embodiment, the external control circuit is connected to the back electrode 0102, and the back electrode 0102 is connected to the modulation unit 0100 through the connecting component 0103. That is, the voltage applied by the external control circuit can be applied to the modulation unit 0100 through the back electrode 0102 and the connecting component 0103 to cause the modulation unit 0100 to deform. This deformation can modulate the incident terahertz wave incident on the first surface of the dielectric layer 0101.

[0059] In one embodiment, such as Figure 2 As shown, the resonant unit 010 further includes: a first insulating layer 0104, which is disposed between the first surface of the dielectric layer 0101 and the back electrode 0102; and a second insulating layer 0105, which is disposed between the second surface of the dielectric layer 0101 and the modulation unit 0100.

[0060] The first insulating layer 0104 and the second insulating layer 0105 are both made of silicon nitride material, which can insulate the dielectric layer 0101 from the back electrode 0102 and from the modulation unit 0100, so that the voltage applied between the dielectric layer 0101 and the back electrode 0102 (or the modulation unit 0100) by the control circuit will not affect each other.

[0061] The resonant unit structure provided in this application embodiment allows the back electrode to be electrically connected to an external circuit. A connecting component can pass through the dielectric layer to connect the modulation unit and the back electrode. Applying voltage to the back electrode by the control circuit is equivalent to directly applying voltage to the modulation unit, causing the modulation unit to deform accordingly. A first insulating layer and a second insulating layer are disposed on the surface of the dielectric layer to isolate the dielectric layer from the modulation unit and from the back electrode, ensuring that the voltages applied between the dielectric layer and the modulation unit (or the back electrode) do not interfere with each other.

[0062] In one embodiment, such as Figure 2 As shown, the resonant unit 010 further includes a surface metal structure 0106, which is disposed between the modulation unit 0100 and the dielectric layer 0101.

[0063] The surface metal structure 0106 is made of metal, such as aluminum or copper. The surface metal structure 0106 can deform after a voltage is applied between the modulation unit 0100 and the dielectric layer 0101. The surface metal structure 0106 is located at the end of the contact between the modulation unit 0100 and the dielectric layer 0101, and does not completely cover both. It should be noted that the surface metal structure 0106 creates a certain gap between the modulation unit 0100 and the dielectric layer 0101, making it easier for the resonant unit 010 to deform after a preset voltage is applied, and resulting in a more pronounced deformation.

[0064] In one embodiment, the resonant unit 010 further includes a modulation unit 0100 which is a cantilever beam structure.

[0065] The modulation unit 0100 is made of a deformable metallic material, such as copper. The modulation unit 0100 deforms after a preset voltage is applied to the resonant unit 010. This deformation changes the resonant characteristics of the resonant unit 010. When a terahertz wave is incident on the resonant unit 010, the phase of the reflected terahertz wave is modulated based on the deformed resonant unit 010. It should be noted that the cantilever beam structure of the modulation unit 0100 can include a straight cantilever beam structure, a double-bar cantilever beam structure, an X-shaped cantilever beam structure, etc., and this embodiment does not limit the specific type of cantilever beam.

[0066] In one embodiment, such as Figure 2 As shown, the modulation unit 0100 is a cross-shaped cantilever beam structure.

[0067] The modulation unit 0100 is made of a deformable metallic material, such as aluminum. The modulation unit 0100 deforms after a preset voltage is applied to the resonant unit 010. This deformation changes the resonant characteristics of the resonant unit 010. When an incident terahertz wave is incident on the resonant unit 010, the phase of the reflected terahertz wave is modulated based on the deformed resonant unit 010. Furthermore, the aforementioned surface metal structure 0106 can be disposed at the four ends of the cross-shaped cantilever beam structure of the modulation unit 0100 in this embodiment, so that the modulation unit 0100 is not directly connected to the dielectric layer 0101, but rather there is a certain gap. This gap makes it easier for the resonant unit 010 to deform after a preset voltage is applied, and makes the degree of deformation more pronounced. Figure 3 The diagram shown is a schematic of the resonant unit 010 after deformation.

[0068] In one embodiment, such as Figure 4As shown, a terahertz wave modulation system 10 is provided. The terahertz wave modulation system 10 includes a terahertz wave modulation device 01 as described in claim 1 and a control circuit 02. The control circuit 02 is connected to the terahertz wave modulation device 01. The control circuit 02 is used to determine the preset voltage to be applied to each resonant unit 010 according to the arrangement position of each resonant unit 010 in the modulation device 01, and to apply each preset voltage to each resonant unit 010 accordingly, so as to control each modulation unit 010 to perform phase modulation on the input terahertz wave based on its own preset voltage.

[0069] The control circuit 02 is connected to the terahertz wave modulation device 01. The control circuit 02 can apply a preset voltage between the back electrode 0102 and the dielectric layer 0101 in the terahertz wave modulation device 01 to cause the modulation unit 0100 to deform. This deformation will change the electromagnetic resonance characteristics of the resonant unit 010. After the terahertz wave is incident on the resonant unit 010, the phase of the reflected terahertz wave will be modulated based on the deformed resonant unit 010.

[0070] Furthermore, such as Figure 5 As shown, to obtain the terahertz beam information of the target, the control circuit 02 can first determine the phase distribution of each resonant unit 010 based on the terahertz beam information of the target, and then determine the driving voltage of each resonant unit 010 based on the phase distribution of each resonant unit 010 and the relationship between the phase distribution of the resonant unit 010 and the driving voltage of the resonant unit 010. Then, according to the through-silicon via technology and cell array addressing, the driving voltage of each resonant unit 010 is divided, and the divided voltage is two-dimensionally addressed according to the regulated input, that is, the driving voltage of each resonant unit 010 is loaded onto the corresponding resonant unit 010 to configure each resonant unit 010 and the voltage loaded on each resonant unit 010. This voltage will cause the modulation unit 0100 to deform, and this deformation will change the electromagnetic resonance characteristics of the resonant unit 010. After the terahertz wave is incident on the resonant unit 010, the phase of the reflected terahertz wave will be modulated based on the deformed resonant unit 010.

[0071] The aforementioned terahertz wave modulation device 01 can perform two-dimensional modulation of the phase of the incident terahertz wave. It should be noted that the surface of the terahertz wave modulation device 01 is a metasurface structure, which includes multiple resonant units 010 arranged in a two-dimensional array. Each resonant unit 010 can undergo electromagnetic resonance under the action of the incident terahertz wave and generate reflected terahertz waves, thereby achieving modulation of the amplitude and phase of the terahertz wave. Since this scheme can control the state of each resonant unit 010 in the metasurface structure to be different from each other, each resonant unit 010 in the two-dimensional array of the metasurface structure can be arbitrarily controlled to be in a different state. Therefore, the aforementioned terahertz wave modulation device 01 can perform two-dimensional modulation of the phase of the incident terahertz wave.

[0072] Each resonant unit 010 includes a modulation unit 0100 and a dielectric layer 0101. The modulation unit 0100 is fixed to the first surface of the dielectric layer 0101. The dielectric layer 0101 is made of silicon crystal. The modulation unit 0100 can be a cross-shaped structure of metal material or a strip-shaped structure of metal material. The structure of the modulation unit 0100 is not limited in this embodiment. The modulation unit 0100 can deform when a voltage is applied to the resonant unit 010. The magnitude of the deformation of the modulation unit 0100 varies depending on the voltage applied to the resonant unit 010. Furthermore, the greater the voltage applied to the resonant unit 010, the greater the deformation of the modulation unit 0100.

[0073] The working principle of the terahertz wave modulation device 01 provided in this embodiment is as follows: When it is necessary to perform two-dimensional modulation on the phase of the incident terahertz wave, since the amplitude and phase of the reflected terahertz wave are strongly dependent on the input voltage of the resonant unit 010, a preset voltage can be applied to multiple resonant units 010 in the terahertz wave modulation device 01 by the control circuit 02. After the preset voltage is applied, the modulation unit 0100 of each resonant unit 010 will deform. This deformation will change the electromagnetic resonance characteristics of each resonant unit 010. That is, if the preset voltage applied to each resonant unit 010 is different, the deformation of the modulation unit 0100 in each resonant unit 010 will be different, thereby modulating the phase of the incident terahertz wave to different degrees, so as to achieve different phase modulation of the incident terahertz wave.

[0074] The terahertz wave modulation system provided in this application is characterized in that it includes the aforementioned terahertz wave modulation device and a control circuit, wherein the control circuit is connected to the terahertz wave modulation device. The control circuit is used to determine the preset voltage to be applied to each resonant unit according to the arrangement position of each resonant unit in the modulation device, and to apply each preset voltage to each resonant unit accordingly, thereby controlling each modulation unit to perform phase modulation of the input terahertz wave based on its respective preset voltage. This scheme utilizes the dependency relationship between the input voltage of the resonant unit and the phase of the reflected terahertz wave to set the input voltage of each resonant unit, thereby achieving phase modulation of the terahertz wave reflected by each resonant unit. Furthermore, since each resonant unit is arranged in a two-dimensional array, applying different preset voltages to each resonant unit can achieve different phases of the terahertz waves reflected by each resonant unit on the two-dimensional array. Compared with the prior art, the phase of the terahertz wave reflected by each resonant unit can be flexibly modulated according to the magnitude of the preset voltage applied to each resonant unit, thus improving the flexibility of terahertz wave modulation.

[0075] In one embodiment, such as Figure 6 This is a schematic diagram of terahertz beam modulation. The dielectric layer 0101 is grounded. The voltage calculated by the modulation circuit 02 is applied to each resonant unit 010. This voltage can control the modulation unit 0100 in each resonant unit 010 to undergo a specified deformation, thereby enabling each resonant unit 010 to configure the two-dimensional phase distribution of the reflected terahertz wave 302 under the excitation of the incident terahertz wave 301.

[0076] In one embodiment, such as Figure 7-9 As shown, the phase distribution under different terahertz beam modulation requirements is illustrated. Figure 7 Phase distribution configured for beam deflection phase, Figure 8 Phase distribution configured for focusing function phase, Figure 9 The phase distribution for generating phase configuration of angular momentum should be noted. It should be observed that the voltage applied to each resonant element 010 differs under different phase distribution states. Figure 7 , Figure 8 and Figure 9 The phase of the reflected terahertz wave is composed of a square array with a side length of 6.4 mm, and pi is the magnitude of the terahertz wave phase.

[0077] In one embodiment, such as Figure 10 As shown, the simulation results of the voltage-phase modulation curve in this scheme are displayed. Figure 10As can be seen, with the increase of the voltage applied between the dielectric layer 0101 and the back electrode 0102, the deformation of the modulation unit 0100 also increases, thereby increasing the phase of the reflected terahertz wave. There is no obvious proportional relationship between the amplitude of the reflected terahertz wave and the voltage applied between the dielectric layer 0101 and the back electrode 0102. Clearly, the simulation results of the voltage-phase modulation curve provided in this embodiment further illustrate that applying different voltages to each resonant unit 010 results in different deformations in each modulation unit 0100. Because the deformations of each modulation unit 0100 are different, their electromagnetic resonance characteristics are different, which enables phase modulation of the terahertz waves incident on each modulation unit 0100.

[0078] In one embodiment, a method for fabricating a resonant unit 010 structure is also provided. The fabrication sequence of the resonant unit 010 is as follows: preparing a silicon substrate, processing blind holes using deep reactive etching, growing a silicon oxide insulating layer using thermal oxidation, forming copper pillars in the blind holes by electroplating, forming a bottom electrode plate by surface sputtering, defining a movable cantilever beam support anchor point using photosensitive polyimide as a sacrificial layer, processing the movable cantilever beam structure and anchor point by electroplating, thinning and polishing the back side of the silicon wafer by etching and chemical mechanical polishing, forming a back insulating layer by spin coating with photosensitive polyimide, processing the back electrode plate by electroplating, and releasing the front cantilever beam structure by dry etching.

[0079] Those skilled in the art will understand that all or part of the processes in the methods of the above embodiments can be implemented by a computer program instructing related hardware. The computer program can be stored in a non-volatile computer-readable storage medium, and when executed, it can include the processes of the embodiments of the above methods. Any references to memory, databases, or other media used in the embodiments provided in this application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetic random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. By way of illustration and not limitation, RAM can take many forms, such as Static Random Access Memory (SRAM) or Dynamic Random Access Memory (DRAM). The databases involved in the embodiments provided in this application may include at least one type of relational database and non-relational database. Non-relational databases may include, but are not limited to, blockchain-based distributed databases. The processors involved in the embodiments provided in this application may be general-purpose processors, central processing units, graphics processing units, digital signal processors, programmable logic devices, quantum computing-based data processing logic devices, etc., and are not limited to these.

[0080] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0081] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of this application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this application should be determined by the appended claims.

Claims

1. A terahertz wave modulation system, characterized in that, The terahertz wave modulation system includes a terahertz wave modulation device and a control circuit, wherein the control circuit is connected to the modulation device. The modulation device includes multiple resonant units arranged in a two-dimensional array. Each resonant unit includes a modulation unit, a dielectric layer, a back electrode, and a connecting component. The modulation unit is fixed to a first surface of the dielectric layer. The back electrode is fixed to a second surface of the dielectric layer and connected to the control circuit. The first surface and the second surface are opposite to each other. The modulation unit is used to generate deformation when a preset voltage is applied, so as to perform phase modulation on the incident terahertz wave. The connecting component is used to connect the modulation unit and the back electrode, so that the modulation unit is fixed on the first surface of the dielectric layer, and the back electrode is fixed on the second surface of the dielectric layer; The control circuit is used to determine the preset voltage to be applied to each of the resonant units according to the arrangement position of each resonant unit in the modulation device, and to apply each preset voltage to each of the resonant units accordingly, so as to control each of the modulation units in the modulation device to perform phase modulation on the input terahertz wave based on its own preset voltage.

2. The modulation system according to claim 1, characterized in that, The resonant unit further includes a first insulating layer disposed between the first surface of the dielectric layer and the back electrode.

3. The modulation system according to claim 2, characterized in that, The first insulating layer is made of silicon nitride material.

4. The modulation system according to claim 1, characterized in that, The resonant unit further includes a second insulating layer, which is disposed between the second surface of the dielectric layer and the modulation unit.

5. The modulation system according to claim 4, characterized in that, The second insulating layer is made of silicon nitride material.

6. The modulation system according to claim 1, characterized in that, The resonant unit further includes a surface metal structure disposed between the modulation unit and the dielectric layer.

7. The modulation system according to claim 1, characterized in that, The modulation unit is a cantilever beam structure.

8. The modulation system according to claim 7, characterized in that, The cantilever beam structure includes at least one of the following: a straight cantilever beam structure, a double-bar cantilever beam structure, and an X-shaped cantilever beam structure.

9. The modulation system according to claim 1, characterized in that, The modulation unit is a cross-shaped cantilever beam structure.

10. The modulation system according to claim 1, characterized in that, The dielectric layer is made of silicon crystal.

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