A resin composition and its application

Abstract

The present invention provides a resin composition and its application, wherein the resin composition comprises the following components: (A) a resin containing an unsaturated bond, (B) an initiator, and (C) an inorganic filler surface-treated with a silane coupling agent having a structure represented by formula (I). The present invention uses a silane coupling agent having a structure represented by formula (I) to surface-treat the inorganic filler, thereby improving the bonding strength at the interface between the inorganic filler and the unsaturated resin matrix. The resulting insulating film has excellent dielectric properties and good dielectric stability, and the ΔD after HAST is 0.04. f The variation range of the frequency band (10GHz) is small, and it can be applied to high-frequency and high-speed printed circuit boards prepared by semi-additive or additive methods.

Description

Technical Field

[0001] The invention belongs to the technical field of packaging films and relates to a resin composition and application thereof. Background Art

[0002] In recent years, electronic devices have been progressively miniaturized and advanced in performance. Printed circuit boards (PCBs) are expected to achieve multilayered stacking, fine wiring, high density, and high reliability. A well-known manufacturing technique for printed circuit boards is a build-up method in which insulating layers and conductive layers are alternately stacked on an inner substrate. The insulating layers are typically formed by curing a resin composition. During the build-up process, the insulating film, after desmear treatment, is required to have a low arithmetic mean roughness profile (Ra) and high chemical copper bonding strength to meet the process requirements for ultrafine circuits.

[0003] In order to achieve low dielectric properties of the insulating layer, in addition to selecting a resin with low dielectric properties, the resin composition also needs to select an inorganic filler with low dielectric loss. In order to meet the low CTE, low warpage and other properties of the insulating film, it is necessary to use more than 30wt% of highly filled inorganic fillers in the resin composition. However, highly filled inorganic fillers will reduce the HAST resistance of the resin system. At the same time, the surface treatment of the inorganic filler will also have a great impact on the final low dielectric properties and dielectric stability reliability of the resin composition.

[0004] CN106433025A provides a resin composition for forming a printed circuit board, a sheet-like laminate material containing the resin composition, a printed circuit board, and a semiconductor device. The surface of the inorganic filler material is treated with a compound having a long main chain, thereby reducing the warping of the insulating layer during reflow soldering, lowering the minimum melt viscosity, and obtaining good circuit embedding properties. However, the dielectric properties and dielectric stability reliability of the resin composition provided by the invention need to be further improved.

[0005] Therefore, it is expected in this field to develop a dielectric material with excellent dielectric properties, good dielectric stability, and a △D after HAST. f The insulating adhesive film has a small variation range (10GHz) and can be applied to high-frequency and high-speed printed circuit boards prepared by semi-additive or additive methods. Summary of the Invention

[0006] In view of the deficiencies in the prior art, the present invention aims to provide a resin composition and application thereof.

[0007] To achieve this object, the present invention adopts the following technical solutions:

[0008] In a first aspect, the present invention provides a resin composition comprising the following components: (A) a resin containing an unsaturated bond, (B) an initiator, and (C) an inorganic filler surface-treated with a silane coupling agent having a structure represented by formula (I);

[0009]

[0010] In formula (I), R 1 each independently represents an alkyl group having 1 to 10 carbon atoms (e.g., 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10) or an aryl group having 6 to 10 carbon atoms (e.g., 6, 7, 8, 9, or 10), and R 2 Each of the following groups independently represents an alkyl group having 1 to 10 carbon atoms (e.g., 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10) or an aryl group having 6 to 10 carbon atoms (e.g., 6, 7, 8, 9, or 10), e, f, g, and h independently represent an integer from 1 to 40 (e.g., 1, 3, 5, 8, 10, 12, 15, 18, 20, 22, 25, 28, 30, 32, 35, 38, or 40), and m represents an integer from 1 to 3 (e.g., 1, 2, or 3). The order of the repeating units is arbitrary.

[0011] In the present invention, the silane coupling agent of the structure shown in formula (I) has the performance of low dielectric loss because the main chain of the structure is composed of only two elements, carbon and hydrogen, and does not contain polar groups. At the same time, its side chain contains multiple unsaturated bonds, which can increase the crosslinking density between the inorganic filler and the resin containing unsaturated bonds at the interface between the inorganic filler and the resin, and can effectively prevent water molecules from penetrating into the insulating layer through the interface between the inorganic filler and the resin during the HAST process, affecting the dielectric stability. The insulating film prepared by combining the inorganic filler surface treated with the silane coupling agent having the structure shown in formula (I) with the resin containing unsaturated bonds has excellent dielectric properties and good dielectric stability. The △D after HAST is 0. f The variation range of the frequency band (10GHz) is small, and it can be applied to high-frequency and high-speed printed circuit boards prepared by semi-additive or additive methods.

[0012] It should be noted that the inorganic filler can be surface treated using a silane coupling agent having a structure represented by formula (I) using conventional methods in the prior art.

[0013] Exemplarily, the method for preparing the inorganic filler surface-treated with a silane coupling agent having a structure represented by formula (I) comprises the following steps:

[0014] The inorganic filler is placed in a stirrer, and a silane coupling agent having a structure represented by formula (I) is sprayed into the stirrer under stirring to react and obtain the inorganic filler surface-treated with the silane coupling agent having a structure represented by formula (I).

[0015] Preferably, in formula (I), f / (e+f+g+h) is 0.20 or greater, more preferably 0.22 or greater, further preferably 0.25 or greater, and particularly preferably 0.30 or greater. The upper limit is not particularly limited, but is preferably 1 or less, and more preferably 0.8 or less.

[0016] Preferably, the number average molecular weight of the silane coupling agent of the structure shown in formula (I) is 500 to 50,000, for example, 500, 1,000, 5,000, 10,000, 20,000 or 50,000, as well as specific values between the above values. Due to space limitations and for the sake of simplicity, the present invention no longer exhaustively lists the specific values included in the range, preferably 1,000 to 20,000. In the present invention, the number average molecular weight test method is GB / T 21863-2008, and is measured by gel permeation chromatography (GPC) based on polystyrene calibration. Compared to other small molecule silane coupling agents, the present invention uses a silane coupling agent of the structure shown in formula (I) to surface treat the inorganic filler, and the volatility is lower during the drying process. The use of a low content of silane coupling agent can increase the interfacial crosslinking density between the unsaturated resin and the inorganic filler.

[0017] Preferably, based on 100% by weight of the inorganic filler in component (C), the content of the silane coupling agent of formula (I) is 0.1% to 5%, for example, 0.1%, 0.2%, 0.3%, 0.5%, 0.8%, 1%, 1.5%, 2%, 2.5%, 3%, 3.5%, 4%, 4.5% or 5%, as well as specific values between the above values. Due to space limitations and for the sake of simplicity, the present invention does not exhaustively list the specific values included in the above range. If the content of the silane coupling agent of formula (I) is too low, the surface treatment of the inorganic filler will be insufficient, and the coating will not be well performed, resulting in a relatively weak bridging effect between the inorganic filler and the unsaturated resin matrix. If the content of the silane coupling agent of formula (I) is too high, the excess silane coupling agent will migrate freely, affecting the copper bonding strength of the insulating film surface and reducing the dielectric properties of the insulating film.

[0018] Preferably, the weight content of component (C) is 30% to 80%, for example, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, or 80%, based on the sum of the weights of component (A) and component (C) as 100%, as well as specific values between the aforementioned values. Due to space limitations and for the sake of simplicity, the present invention does not exhaustively list the specific values included in the aforementioned ranges. The present invention uses a highly filled component (C) at a concentration of 30 wt% or more to meet the performance requirements of the insulating film, such as low CTE and low warpage. If the content of component (C) is too low, the CTE and warpage resistance are poor, making it difficult to use in build-up insulating films. If the content of component (C) is too high, the chemical copper bonding strength of the insulating film will be reduced.

[0019] Preferably, based on the sum of the weight parts of component (A) and component (C) as 100%, the weight part content of component (A) is 20% to 70%, for example, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65% or 70%, as well as specific point values between the above point values. Due to space limitations and for the sake of simplicity, the present invention no longer exhaustively lists the specific point values included in the said range.

[0020] Preferably, the weight of the (B) component is 0.1% to 5% of the sum of the weights of the (A) component and the (C) component, for example, 0.1%, 0.2%, 0.3%, 0.5%, 0.8%, 1%, 1.5%, 2%, 2.5%, 3%, 3.5%, 4%, 4.5% or 5%, as well as specific point values between the above point values. Due to space limitations and for the sake of simplicity, the present invention no longer exhaustively lists the specific point values included in the range.

[0021] Preferably, the inorganic filler in the (C) component includes any one or a combination of at least two of silicon dioxide, titanium dioxide, zinc oxide, aluminum hydroxide, aluminum oxide, magnesium oxide, magnesium hydroxide, calcium carbonate, aluminum nitride, boron nitride, aluminum silicon carbide, silicon carbide, zirconium oxide, mica, boehmite, calcined talc, talc, silicon nitride, strontium titanate, barium titanate or calcined kaolin.

[0022] Preferably, the silica may be any one of fused silica, crystalline silica, porous silica or hollow silica, or a combination of at least two of them.

[0023] Preferably, the resin containing an unsaturated bond includes any one or a combination of at least two of an unsaturated bond-containing polyphenylene ether, a multifunctional vinyl aromatic polymer, a styrene-butadiene-styrene polymer, a styrene-butadiene polymer, a styrene-isoprene polymer, polybutadiene, polyisoprene, a cyanate resin, an unsaturated cycloolefin copolymer, an allyl-modified benzoxazine, triallyl isocyanurate, triallyl cyanurate or maleimide.

[0024] Preferably, the initiator comprises a peroxide and / or an azo compound.

[0025] In a second aspect, the present invention provides a resin adhesive, which comprises the resin composition as described in the first aspect and a solvent.

[0026] Preferably, the solvent includes any one of acetone, butanone, methyl ethyl ketone, cyclohexanone, toluene or xylene, or a combination of at least two thereof.

[0027] In a third aspect, the present invention provides an insulating adhesive film, wherein the material of the insulating adhesive film includes the resin composition as described in the first aspect.

[0028] The present invention does not impose any specific restrictions on the method for preparing the insulating film. Exemplarily, the method for preparing the insulating film includes the following steps:

[0029] The resin composition and the solvent are mixed to obtain a resin adhesive solution, the resin adhesive solution is coated on a substrate, baked, and the substrate is removed to obtain the insulating adhesive film.

[0030] Preferably, the substrate comprises any one of polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polymethyl methacrylate, cyclic polyolefin, triacetyl cellulose, polyether sulfide, polyether ketone, polyimide, polytetrafluoroethylene, polybenzimidazole, polyetheretherketone or polyphenylene sulfide.

[0031] Preferably, the thickness of the substrate is 10 to 150 μm, for example, 10 μm, 20 μm, 30 μm, 50 μm, 80 μm, 100 μm, 110 μm, 120 μm, 130 μm, 140 μm or 150 μm, as well as specific point values between the above point values. Due to space limitations and for the sake of simplicity, the present invention no longer exhaustively lists the specific point values included in the range, and is further preferably 20 to 60 μm.

[0032] Preferably, the baking temperature is 80-120°C, for example, 80°C, 90°C, 100°C, 110°C or 120°C, as well as specific point values between the above point values. Due to space limitations and for the sake of simplicity, the present invention no longer exhaustively lists the specific point values included in the range.

[0033] Preferably, the baking time is 1 to 10 minutes, for example, 1 minute, 3 minutes, 5 minutes, 8 minutes or 10 minutes, as well as specific values between the above points. Due to space limitations and for the sake of simplicity, the present invention no longer exhaustively lists the specific points included in the range.

[0034] Preferably, the thickness of the insulating film is 10 to 100 μm, for example, 10 μm, 15 μm, 20 μm, 25 μm, 30 μm, 35 μm, 40 μm, 45 μm, 50 μm, 55 μm, 60 μm, 65 μm, 70 μm, 75 μm, 80 μm, 85 μm, 90 μm, 95 μm or 100 μm, as well as specific point values between the above point values. Due to space limitations and for the sake of simplicity, the present invention no longer exhaustively lists the specific point values included in the range.

[0035] Preferably, the dielectric loss of the insulating film after curing is ≤0.00251, for example, 0.00202, 0.00208, 0.00233 or 0.00251, as well as specific point values between the above point values. Due to space limitations and for the sake of simplicity, the present invention no longer exhaustively lists the specific point values included in the range.

[0036] Preferably, the insulating film after HAST curing △ D f (10GHz)≤0.00019, such as 0.00013, 0.00014, 0.00016 or 0.00019, as well as specific point values between the above point values. Due to space limitations and for the sake of simplicity, the present invention no longer exhaustively lists the specific point values included in the said range.

[0037] Preferably, the surface roughness Ra value of the insulating film after Desmear treatment is ≤211 nm (for example, 134 nm, 141 nm, 150 nm, or 211 nm), and the chemical copper bonding strength is ≥4.1 N / cm, for example, 4.1 N / cm, 4.2 N / cm, 4.6 N / cm, or 5.5 N / cm, as well as specific values between the above points. Due to space limitations and for the sake of simplicity, the present invention does not exhaustively enumerate the specific points included in the above range.

[0038] Compared with the prior art, the present invention has at least the following beneficial effects:

[0039] (1) In the present invention, the silane coupling agent of the structure shown in formula (I) has the performance of low dielectric loss because the main chain portion of the structure is composed of only two elements, carbon and hydrogen, and does not contain polar groups. At the same time, its side chain contains multiple unsaturated bonds, which can increase the crosslinking density between the inorganic filler and the resin containing unsaturated bonds at the interface between the inorganic filler and the resin, and can effectively prevent water molecules from penetrating into the insulating layer through the interface between the inorganic filler and the resin during the HAST process, thereby affecting the dielectric stability; the silane coupling agent plays a bridging role on the interface between the unsaturated resin and the inorganic filler, and the interfacial bonding force after crosslinking and curing is high; compared with other small molecule silane coupling agents, the silane coupling agent of the structure shown in formula (I) is used to perform surface treatment on the inorganic filler, and the volatility during the drying process is lower, and the use of a low content of silane coupling agent can increase the interfacial crosslinking density between the resin and the inorganic filler.

[0040] (2) The insulating film prepared by combining the inorganic filler surface treated with the silane coupling agent having the structure shown in formula (I) with the resin containing unsaturated bonds has excellent dielectric properties and good dielectric stability. The △D after HAST is f The variation range of the frequency band (10GHz) is small, and it can be applied to high-frequency and high-speed printed circuit boards prepared by semi-additive or additive methods. DETAILED DESCRIPTION

[0041] The technical solution of the present invention is further described below by way of specific embodiments. It should be understood by those skilled in the art that the embodiments are merely to help understand the present invention and should not be regarded as specific limitations of the present invention.

[0042] The raw materials used in the preparation examples, comparative preparation examples, embodiments and comparative examples of the present invention are as follows:

[0043] (1) Resins containing unsaturated bonds:

[0044] OPE-2st 2200, polyphenylene ether containing vinyl benzyl groups at the end, Mitsubishi Chemical Corporation;

[0045] SA-9000, polyphenylene ether containing terminal methacrylate groups, Saudi Basic Industries Corporation;

[0046] B3000, polybutadiene resin, Nippon Soda Co., Ltd.;

[0047] Ricon100, styrene-butadiene copolymer, Sartomer, USA;

[0048] BMI-5100, bis(3-ethyl-5-methyl-4-maleimidophenyl)methane, Yamato Chemical Industry Co., Ltd.;

[0049] ODV-XET(X05), polydivinylbenzene, Nippon Steel Chemical Co., Ltd.

[0050] (2) Initiator:

[0051] BPO: dibenzoyl peroxide, Taigawa Oil & Fats Co., Ltd.

[0052] DCP: dicumyl peroxide, Shanghai Fangruida Chemical.

[0053] (3) Inorganic fillers:

[0054] SO-C2, silicon dioxide, median particle size D50: 0.5 μm, manufactured by Admatechs Co., Ltd., Japan;

[0055] AO-502, alumina, median particle size D50: 0.7 μm, manufactured by Japan Admatechs Co., Ltd.

[0056] (4) Silane coupling agent having the structure shown in formula (I):

[0057] Styrene-butadiene polymer silane coupling agent, X-12-1281C, Shin-Etsu Chemical, Japan, number average molecular weight is 6400.

[0058] (5) Other silane coupling agents:

[0059] Vinyltrimethoxysilane, KBM-1003, Shin-Etsu Chemical, Japan, its structural formula is

[0060]

[0061] Styrene-butadiene polymer silane coupling agent, X-12-1281A, Shin-Etsu Chemical, Japan, number average molecular weight is 9000, there is no unsaturated bond in the side chain, its structural formula is

[0062]

[0063] Preparation Examples 1-6

[0064] Preparation Examples 1-6 respectively provide an inorganic filler surface-treated with a silane coupling agent having a structure represented by formula (I), and the preparation method comprises the following steps:

[0065] The formulated amount of inorganic filler was placed in a blender, and while stirring, the vaporized silane coupling agent having the structure represented by formula (I) was sprayed thereinto, and the reaction was carried out for 10 minutes to obtain the inorganic filler surface-treated with the silane coupling agent having the structure represented by formula (I), which were respectively recorded as modified inorganic fillers AF.

[0066] The specific selection and dosage (parts by weight) of each component are shown in Table 1, wherein the "parts" and "parts by weight" involved in the present invention are calculated based on solid content and do not include solvents, dispersants, etc.

[0067] Comparative Preparation Example 1-2

[0068] The only difference between Comparative Preparation Example 1-2 and Preparation Example 1 is that the silane coupling agent with the structure represented by formula (I) is replaced by other silane coupling agents in equal parts by weight, as shown in Table 1.

[0069] Table 1

[0070]

[0071] Examples 1-6

[0072] Examples 1-6 each provide an insulating film, and the preparation method includes the following steps:

[0073] A resin composition containing an unsaturated bond, an initiator, and an inorganic filler surface-treated with a silane coupling agent having a structure represented by formula (I) in a formulated amount were mixed to obtain the resin composition. The mixture was added to a solvent (butanone) and stirred for 2 hours to obtain a resin adhesive having a solid content of 65%. The resin adhesive was coated on a PET release film and baked in an oven at 120° C. for 5 minutes to obtain the insulating adhesive film.

[0074] The specific selection and dosage (parts by weight) of each component are shown in Table 2.

[0075] Table 2

[0076]

[0077] Comparative Example 1

[0078] The only difference between this comparative example and Example 1 is that the modified inorganic filler A is replaced by the modified inorganic filler prepared in Comparative Preparation Example 1 in equal parts by weight.

[0079] Comparative Example 2

[0080] The only difference between this comparative example and Example 1 is that the modified inorganic filler A is replaced by the modified inorganic filler prepared in Comparative Preparation Example 2 in equal parts by weight.

[0081] Comparative Example 3

[0082] The only difference between this comparative example and Example 1 is that the modified inorganic filler A is replaced by equal parts by weight of an inorganic filler and a silane coupling agent (the mass ratio of the inorganic filler SO-C2 to the silane coupling agent X-12-1281C is 100:2). That is, in this comparative example, the resin containing an unsaturated bond, the initiator, the inorganic filler, and the silane coupling agent are directly mixed to obtain a resin composition, and the other steps are the same as in Example 1.

[0083] The performance tests of the insulating films prepared in Examples 1-6 and Comparative Examples 1-3 were conducted using the following test methods:

[0084] (1) HAST: Highly Accelerated Temperature and Humidity Stress Test (HAST) according to JESD22-A110, temperature 130°C, humidity 85% RH, 100 hours;

[0085] (2) Dielectric loss D f :Referring to IPC-TM-650 2.5.5.15, the dielectric loss D of the cured insulating film at 10 GHz was measured using the Split Post Dielectric Resonator (SPDR) method. f ;

[0086] (3) Dielectric loss after HAST (D f ): Take the above-mentioned tested dielectric loss (D f ) samples, after HAST treatment, the dielectric loss (D f );

[0087] △D f :Dielectric loss after HAST (D f )-Dielectric loss before HAST (D f );

[0088] (4) Arithmetic mean of roughness profile (Ra):

[0089] An insulating film was pressed onto the surface of the core board and oven-cured at 180°C for 30 minutes to obtain a pre-cured insulating film. The insulating film was then subjected to the following Desmear treatment: soaking in an aqueous solution of glycol ether and sodium hydroxide (MV Sweller, ATOTECH) at 70°C for 10 minutes, rinsing with deionized water for 2 minutes, soaking in a potassium permanganate solution (MV P-Etch, ATOTECH) at 80°C for 30 minutes, rinsing with deionized water for 2 minutes, and soaking in an acidic aqueous solution (MV Reduction Cleaner, ATOTECH) at 50°C for 5 minutes to obtain a roughened insulating film. The surface Ra after roughening treatment was measured using a laser confocal microscope (OLYMPUS).

[0090] (5) Chemical copper bonding strength (PS):

[0091] The roughened insulating film was subjected to the following copper deposition, electroplating, and post-curing treatments: soaking in chemical copper solution (MVTP1, ATOTECH) for 20 min—electroplating copper to a thickness of 25 μm—curing in an oven at 200°C for 60 min, and the copper foil peel strength tester was used to test the copper adhesion of the insulating film.

[0092] The performance test results of the embodiments and comparative examples are shown in Table 3.

[0093] Table 3

[0094]

[0095] As can be seen from Table 3, the insulating films prepared by using high-filled inorganic fillers surface-treated with a silane coupling agent having a structure represented by formula (I) and resins containing unsaturated bonds in Examples 1-4 of the present invention have excellent dielectric properties and good dielectric stability. The △D after HAST is f (10GHz) has a small change range, and its dielectric loss D f (10GHz) is 0.00202~0.00251, △D after HAST f (10GHz) is 0.00013~0.00019, Ra (after Desmear treatment) is 134~211nm, and the chemical copper bonding strength is 4.1~5.5N / cm.

[0096] In Example 5, the content of the silane coupling agent having the structure shown in formula (I) on the surface of the inorganic filler is relatively low, and it cannot be well coated, resulting in a relatively weak bridging effect between the inorganic filler and the unsaturated resin matrix. The △ D after HAST is f (10GHz) is 0.00047, and the surface roughness Ra after Desmear treatment is relatively large; in Example 6, the content of the silane coupling agent having the structure represented by formula (I) on the surface of the inorganic filler is relatively high, and the excess silane coupling agent will migrate freely during the addition process, reducing the copper bonding strength of the insulating film surface. At the same time, the △D after HAST is f (10GHz) is 0.00055.

[0097] Compared with Example 1, the inorganic filler in Comparative Example 1 was surface modified using a small molecule vinyl-containing silane coupling agent. Since there is only one double bond in the vinyltrimethoxysilane molecule, the crosslinking points between the inorganic filler surface and the unsaturated resin matrix are small, and the ΔD after HAST is f(10GHz) is as high as 0.00060; the inorganic filler in Comparative Example 2 is surface-modified using a silane coupling agent with a butadiene main chain. The side chain of the silane coupling agent does not have an unsaturated bond. Although its main chain contains an unsaturated bond, the unsaturated bond on the main chain can only be opened under ultra-high temperature conditions. Therefore, X-12-1281A in Comparative Example 2 cannot be cross-linked and polymerized with the resin (A) containing an unsaturated bond. The surface modification of the inorganic filler can only improve the agglomeration and compatibility. The △D of the obtained insulating film after HAST is f (10GHz) is as high as 0.00095. At the same time, the Ra after Desmear treatment is also large, making it difficult to prepare fine circuits by the addition method. In Comparative Example 3, the silane coupling agent is directly mixed into the resin composition. After the resin composition is diluted, the surface of the inorganic filler can only be coated with a trace amount of the silane coupling agent having the structure shown in formula (I), resulting in a weak bridging effect between the surface of the inorganic filler and the unsaturated resin matrix. The △D after HAST is f (10GHz) is 0.00028, and the chemical copper bonding strength is also reduced.

[0098] The applicant declares that the present invention uses the above-mentioned embodiments to illustrate the resin composition and its application, but the present invention is not limited to the above-mentioned embodiments, that is, it does not mean that the present invention must rely on the above-mentioned embodiments to be implemented. Those skilled in the art should understand that any improvements to the present invention, equivalent replacements of various raw materials in the products of the present invention, addition of auxiliary ingredients, and selection of specific methods, etc., are all within the scope of protection and disclosure of the present invention.

Claims

1. A resin composition, characterized in that The resin composition comprises the following components: (A) a resin containing an unsaturated bond, (B) an initiator, and (C) an inorganic filler surface-treated with a silane coupling agent having a structure represented by formula (I); ； Formula (I) In formula (I), R 1 each independently represents an alkyl group having 1 to 10 carbon atoms or an aryl group having 6 to 10 carbon atoms, R 2 Each of the repeating units independently represents an alkyl group having 1 to 10 carbon atoms or an aryl group having 6 to 10 carbon atoms; e, f, g, and h independently represent an integer of 1 to 40; and m represents an integer of 1 to 3. The order of the repeating units is arbitrary.

2. The resin composition according to claim 1, wherein The number average molecular weight of the silane coupling agent represented by formula (I) is 500-50,000.

3. The resin composition according to claim 2, characterized in that The number average molecular weight of the silane coupling agent with the structure represented by formula (I) is 1,000 to 20,000.

4. The resin composition according to claim 1, characterized in that Based on 100% by weight of the inorganic filler in component (C), the content of the silane coupling agent having the structure represented by formula (I) is 0.1% to 5%.

5. The resin composition according to claim 1, wherein Based on the sum of the weight of the component (A) and the component (C) being 100%, the weight content of the component (C) is 30% to 80%.

6. The resin composition according to claim 1, characterized in that Based on the sum of the weight of component (A) and component (C) being 100%, the weight content of component (A) is 20% to 70%.

7. The resin composition according to claim 1, characterized in that The weight of the component (B) accounts for 0.1% to 5% of the total weight of the components (A) and (C).

8. The resin composition according to claim 1, wherein The inorganic filler in the (C) component includes any one or a combination of at least two of silicon dioxide, titanium dioxide, zinc oxide, aluminum hydroxide, aluminum oxide, magnesium oxide, magnesium hydroxide, calcium carbonate, aluminum nitride, boron nitride, aluminum silicon carbide, silicon carbide, zirconium oxide, mica, boehmite, calcined talc, talc, silicon nitride, strontium titanate, barium titanate or calcined kaolin.

9. The resin composition according to claim 1, characterized in that The resin containing an unsaturated bond includes any one or a combination of at least two of an unsaturated bond-containing polyphenylene ether, a multifunctional vinyl aromatic polymer, a styrene-butadiene-styrene polymer, a styrene-butadiene polymer, a styrene-isoprene polymer, polybutadiene, polyisoprene, a cyanate resin, an unsaturated cycloolefin copolymer or an allyl-modified benzoxazine.

10. The resin composition according to claim 1, wherein The initiator includes peroxides and / or azo compounds.

11. A resin glue, characterized in that: The resin glue comprises the resin composition according to any one of claims 1 to 10 and a solvent.

12. The resin adhesive according to claim 11, characterized in that The solvent includes any one of acetone, butanone, methyl ethyl ketone, cyclohexanone, toluene or xylene, or a combination of at least two thereof.

13. An insulating film, characterized in that: The material of the insulating film comprises the resin composition according to any one of claims 1 to 10.

14. The insulating adhesive film according to claim 13, characterized in that: The thickness of the insulating film is 10-100 μm.

15. The insulating adhesive film according to claim 13, characterized in that: The dielectric loss of the insulating adhesive film after curing is ≤0.00251.

16. The insulating adhesive film according to claim 13, characterized in that: The △D of the insulating film after HAST after curing at 10GHz f ≤0.00019.

17. The insulating adhesive film according to claim 13, wherein: The surface roughness Ra value of the insulating film after Desmear treatment is ≤211 nm, and the chemical copper bonding strength is ≥4.1 N / cm.

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