Electrically tunable frequency resonant cavity and simulation method based on electrically tunable frequency resonant cavity

Abstract

The present application relates to the field of microwave technology, and more particularly to an electrically tunable frequency resonant cavity and a simulation method based on the electrically tunable frequency resonant cavity. The electrically tunable frequency resonant cavity comprises: a microwave source; a microwave resonant cavity, the microwave resonant cavity being provided with a coupling port, the microwave source exciting the microwave resonant cavity through the coupling port to form microwaves for coupling with a quantum bit; and a first frequency modulation component for adjusting the resonant frequency of the microwave resonant cavity by applying a voltage to the microwave resonant cavity, thereby simulating each state of the quantum bit. This solves the problems of the related art, such as the difficulty in constructing a test platform and the inability of the resonant cavity to tune the resonant frequency and simulate different quantum bit states. By precisely controlling the resonant frequency of the resonant cavity through an applied voltage, the method enables simulation of each quantum bit state in a quantum monitoring system at room temperature, thereby assisting in debugging the readout equipment in the measurement and control system before the actual operation of the quantum computing chip.

Description

Technical Field

[0001] The present application relates to the field of microwave technology, and in particular to an electrically tuned frequency resonant cavity and a simulation method based on the electrically tuned frequency resonant cavity. Background Art

[0002] At present, the resonant cavity in the superconducting quantum computing chip is coupled with the quantum bit. Changes in the quantum bit often cause changes in the resonant cavity frequency. Therefore, the state of the quantum bit can be read by reading the changes in the resonant cavity frequency.

[0003] In related technologies, superconducting quantum computing chips work in dilution refrigerators, and the resonant cavities used are generally passive devices, that is, they can display their characteristics without the need for an external power supply.

[0004] However, under these working conditions, the operating temperature is Kelvin, which means that it needs to work at an absolute temperature (-273.15° as the starting point), which makes the construction of the test platform more difficult; at the same time, since the resonant cavity is generally a passive device, it is impossible to tune the resonant frequency and simulate different quantum bit states. Summary of the Invention

[0005] The present application provides an electrically tunable frequency resonant cavity and a simulation method based on the electrically tunable frequency resonant cavity to solve the problems in related technologies such as the difficulty in building a test platform and the inability of the resonant cavity to tune the resonant frequency and simulate different quantum bit states. The resonant frequency of the resonant cavity is precisely controlled by applying a voltage, thereby simulating each state of the quantum bit in the quantum monitoring system under room temperature conditions, thereby assisting in completing the debugging of the readout equipment in the measurement and control system before the actual operation of the quantum computing chip.

[0006] A first embodiment of the present application provides an electrically tunable frequency resonant cavity, comprising:

[0007] microwave source;

[0008] A microwave resonant cavity, wherein the microwave resonant cavity is provided with a coupling port, and the microwave source is excited from the coupling port to form microwaves in the microwave resonant cavity to couple with the quantum bit; and

[0009] The first frequency modulation component is used to adjust the resonant frequency of the microwave resonant cavity by applying a voltage to the microwave resonant cavity, thereby simulating each state of the quantum bit.

[0010] Optionally, the first frequency modulation component includes a varactor diode.

[0011] Optionally, the electrically tuned frequency resonant cavity further includes:

[0012] The second frequency modulation component is used to adjust the resonant frequency of the microwave resonant cavity to a preset range.

[0013] Optionally, the preset range is obtained from the tuning range of the second frequency modulation component.

[0014] Optionally, the second frequency modulation component is a ceramic rod.

[0015] Optionally, the electrically tuned frequency resonant cavity further includes:

[0016] A microwave leakage prevention component is provided at the voltage input end of the microwave resonance cavity.

[0017] Optionally, the microwave leakage prevention component is an impedance variation filter.

[0018] Optionally, the microwave leakage prevention component is a microwave leakage prevention flange.

[0019] According to the electrically tunable frequency resonant cavity of the present application, a microwave source is excited into the microwave resonant cavity through a coupling port to form microwaves that couple with the quantum bit. A voltage is then applied to the microwave resonant cavity via a first frequency modulation component to adjust the resonant frequency of the microwave resonant cavity, thereby simulating each state of the quantum bit. This solves the problems of the related art, such as the difficulty in setting up a test platform and the inability of the resonant cavity to tune the resonant frequency and simulate different quantum bit states. By precisely controlling the resonant frequency of the resonant cavity through an applied voltage, the quantum bit state can be simulated in a quantum monitoring system at room temperature. This facilitates the debugging of the readout equipment in the measurement and control system before the actual operation of the quantum computing chip.

[0020] A second embodiment of the present application provides a simulation method based on an electrically tuned frequency resonant cavity, using the electrically tuned frequency resonant cavity described in the first embodiment. The method includes the following steps:

[0021] obtaining an applied voltage of the microwave resonant cavity;

[0022] The microwave source excites the microwave from the coupling port to form microwaves in the microwave resonant cavity to couple with the quantum bit;

[0023] The applied voltage is applied to the microwave resonant cavity, the resonant frequency of the microwave resonant cavity is adjusted, and each state of the quantum bit is simulated.

[0024] According to the simulation method based on an electrically tuned frequency resonant cavity of the present application, a coupling port is provided in the microwave resonant cavity. A microwave source is excited from the coupling port to form microwaves in the microwave resonant cavity to couple with the quantum bit. A voltage is then applied to the microwave resonant cavity via a first frequency modulation component to adjust the resonant frequency of the microwave resonant cavity, thereby simulating each state of the quantum bit. This solves the problems of the related art, such as the difficulty in setting up a test platform, the inability of the resonant cavity to tune the resonant frequency, and the inability to simulate different quantum bit states. By precisely controlling the resonant frequency of the resonant cavity through an applied voltage, the simulation of each quantum bit state in the quantum monitoring system can be achieved at room temperature, thereby assisting in the debugging of the readout equipment in the measurement and control system before the actual operation of the quantum computing chip.

[0025] A third embodiment of the present application provides an analog device based on an electrically tuned frequency resonant cavity, using the electrically tuned frequency resonant cavity described in the first embodiment, the device comprising:

[0026] An acquisition module, configured to acquire an applied voltage of the microwave resonant cavity;

[0027] A generating module, configured to excite the microwave source from the coupling port to form microwaves in the microwave resonant cavity to couple with the quantum bit;

[0028] A simulation module is used to apply the applied voltage to the microwave resonant cavity, adjust the resonant frequency of the microwave resonant cavity, and simulate each state of the quantum bit.

[0029] According to the simulation device based on an electrically tuned frequency resonant cavity of the present application, a coupling port is provided in the microwave resonant cavity. A microwave source is excited from the coupling port to form microwaves in the microwave resonant cavity to couple with the quantum bit. A voltage is then applied to the microwave resonant cavity via a first frequency modulation component to adjust the resonant frequency of the microwave resonant cavity, thereby simulating each state of the quantum bit. This solves the problems of the related art, such as the difficulty in setting up a test platform and the inability of the resonant cavity to tune the resonant frequency and simulate different quantum bit states. By precisely controlling the resonant frequency of the resonant cavity through an applied voltage, the device can simulate each state of the quantum bit in the quantum monitoring system at room temperature, thereby facilitating the debugging of the readout equipment in the measurement and control system before the actual operation of the quantum computing chip.

[0030] Additional aspects and advantages of the present application will be given in part in the description below, and in part will become apparent from the description below, or will be learned through practice of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] The above and / or additional aspects and advantages of the present application will become apparent and easily understood from the following description of the embodiments in conjunction with the accompanying drawings, in which:

[0032] Figure 1 Schematic diagram of a block diagram of an electrically tuned frequency resonant cavity provided according to an embodiment of the present application;

[0033] Figure 2 Schematic diagram of the structure of an electrically tuned frequency resonant cavity according to one embodiment of the present application;

[0034] Figure 3 Schematic diagram of the structure of an electrically tuned frequency resonant cavity according to another embodiment of the present application;

[0035] Figure 4 is a schematic diagram of an equivalent circuit according to an embodiment of the present application;

[0036] Figure 5 This is a schematic diagram of the effect after frequency modulation according to one embodiment of the present application;

[0037] Figure 6 is a flow chart of a simulation method based on an electrically tuned frequency resonant cavity according to an embodiment of the present application;

[0038] Figure 7 4 is a block diagram of an analog device based on an electrically tuned frequency resonant cavity according to an embodiment of the present application. DETAILED DESCRIPTION

[0039] The following describes in detail embodiments of the present application. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the present application, and should not be construed as limiting the present application.

[0040] The following describes the electrically tuned frequency resonant cavity and the simulation method based on the electrically tuned frequency resonant cavity according to the embodiment of the present application with reference to the accompanying drawings. In response to the problem that the resonant cavity in the related art mentioned in the above background technology cannot tune the resonant frequency and cannot simulate different quantum bit states, the present application provides an electrically tuned frequency resonant cavity, wherein a coupling port is set in the microwave resonant cavity, and a microwave source is excited from the coupling port to form a microwave in the microwave resonant cavity to couple with the quantum bit, and a voltage is applied to the microwave resonant cavity through a first frequency modulation component to adjust the resonant frequency of the microwave resonant cavity, thereby simulating each state of the quantum bit. Thus, the problems of the difficulty in building a test platform in the related art and the inability of the resonant cavity to tune the resonant frequency and simulate different quantum bit states are solved. The resonant frequency of the resonant cavity is precisely controlled by the applied voltage, thereby simulating each state of the quantum bit in the quantum monitoring system under room temperature conditions, thereby assisting in completing the debugging of the readout device in the measurement and control system before the actual operation of the quantum computing chip.

[0041] Specifically, Figure 1 A schematic structural diagram of an electrically tunable frequency resonant cavity provided in an embodiment of the present application.

[0042] like Figure 1 As shown, the electrically tuned frequency resonant cavity 10 includes: a microwave source 100 , a microwave resonant cavity 200 and a first frequency tuning component 300 .

[0043] A coupling port is provided at the microwave resonant cavity 200, and the microwave source 100 excites the microwave resonant cavity 200 from the coupling port to form microwaves to couple with the quantum bit, and a voltage is applied to the microwave resonant cavity 200 through the first frequency modulation component 300 to adjust the resonant frequency of the microwave resonant cavity 200, thereby simulating each state of the quantum bit.

[0044] It should be understood that the main types of resonant cavities include rectangular resonant cavities, cylindrical resonant cavities, coaxial resonant cavities, etc. In order to obtain a resonant circuit at high frequency, the resonant cavity is usually composed of a closed metal shell, and the electromagnetic field is confined to the inside of the metal shell to avoid outward radiation of the electromagnetic field.

[0045] Specifically, there are many options for resonant cavities and their modes, such as a rectangular cavity in the TE101 mode, a rectangular cavity in the TE102 mode, a cylindrical cavity in the TE011 mode, etc. Preferably, the resonant cavity used in the embodiments of the present application can be based on the principle of metal cavity resonance, and the resonant mode can be the TE101 mode. For example, the embodiments of the present application can use the TE101 mode of a rectangular resonant cavity. The TE101 mode of a rectangular resonant cavity is the most basic and important mode. It is a metal-enclosed resonant cavity formed by adding two short-circuited plates to the transmission line TE10 in the z-axis direction.

[0046] Furthermore, the electrically tuned frequency resonant cavity 10 of the embodiment of the present application mainly adopts a microwave resonant cavity 200. Due to its high quality factor, it has high sensitivity and is mainly used in resonant circuits in the microwave band. In actual application, energy is input into the cavity or output to the load through a coupling port provided in the cavity. Among them, the main parameters of the microwave resonant cavity 200 include the resonant frequency ω and the quality factor Q. The resonant frequency depends on the structural dimensions and operating mode of the microwave resonant cavity 200. The quality factor Q is an important parameter that describes the microwave resonant cavity 200 and directly determines performance parameters such as frequency selectivity, bandwidth, and damping factor. That is, the loss of the microwave resonant cavity 200 depends only on the internal loss of the cavity (metal conductor loss and dielectric loss).

[0047] Optionally, in some embodiments, the first frequency modulation component 300 includes a varactor diode.

[0048] Specifically, in order to achieve the purpose of applying voltage to change the resonant frequency, the embodiment of the present application can add an electrically tunable varactor diode in the microwave resonant cavity 200, and it can also be used as a variable capacitor in the high-frequency circuit to achieve the effects of automatic adjustment, frequency modulation, and phase modulation.

[0049] Optionally, in some embodiments, the electrically tuned frequency resonant cavity 10 further comprises a microwave leakage prevention component, wherein the microwave leakage prevention component is disposed at the voltage input end of the microwave resonant cavity 200 .

[0050] Optionally, in some embodiments, the microwave leakage prevention component is an impedance variation filter.

[0051] Optionally, in some embodiments, the microwave leakage prevention component is a microwave leakage prevention flange.

[0052] Specifically, when a microwave source excites microwaves from the coupling port of the microwave resonant cavity 200 to generate microwaves, there is a risk of microwave leakage. Therefore, a microwave leakage prevention member is required at the voltage input end of the microwave resonant cavity 200 to prevent microwave leakage from causing a decrease in the Q value of the electrically tuned frequency resonant cavity 10 and an increase in internal losses within the microwave resonant cavity 200.

[0053] It should be noted that the microwave leakage prevention component provided in the embodiment of the present application may be an impedance changing filter, a microwave leakage prevention flange or other devices with microwave leakage prevention function, which is not specifically limited here.

[0054] Optionally, in some embodiments, the electrically tuned frequency resonant cavity 10 further includes a second frequency modulation component 400. The second frequency modulation component 400 is used to adjust the resonant frequency of the microwave resonant cavity 200 to a preset range.

[0055] Optionally, in some embodiments, the preset range is obtained from the tuning range of the second frequency modulation component 400 .

[0056] Optionally, in some embodiments, the second frequency modulation component 400 is a ceramic rod.

[0057] Specifically, the resonant frequency of the electrically tuned frequency resonant cavity 10 designed in the embodiment of the present application is around 8 GHz, while the frequency modulation range of the above-mentioned varactor diode is only 20 MHz. Therefore, in order to achieve the resonant frequency within the preset range, the embodiment of the present application needs to set another set of frequency modulation components in the electrically tuned frequency resonant cavity 10 to modulate the frequency of the microwave resonant cavity 200. Figure 2 and Figure 3As shown, a second frequency modulation component 400 is provided in the electrically tuned frequency resonant cavity 10 to adjust the resonant frequency of the microwave resonant cavity 200 over a wide range to achieve a resonant frequency within a preset range. The second frequency modulation component 400 may be a ceramic rod or other device with a frequency modulation function, which will not be described in detail here.

[0058] The preset range of the resonant frequency of microwave resonant cavity 200 is determined by the tuning range of second frequency modulation component 400, which applies a voltage to microwave resonant cavity 200 to adjust the resonant frequency of microwave resonant cavity 200 to the preset range, thereby simulating the two states of 0 and 1 of the quantum bit. Through tuning, the preset range is 300 MHz. It should be noted that this preset range can be a threshold set by the user, a threshold obtained through a limited number of experiments, or a threshold obtained through a limited number of computer simulations, and is not specifically limited here.

[0059] Furthermore, the microwave resonant cavity 200 employed in the embodiments of the present application is a resonant unit operating at microwave frequencies. It is a dielectric region of arbitrary shape surrounded by conductive walls within which electromagnetic oscillations can occur. It has the characteristics of storing electromagnetic energy and selecting signals of a certain frequency. Therefore, it has functions similar to those of an LC oscillator circuit. In other words, to a certain extent, the microwave resonant cavity 200 can be equivalent to an LC oscillator circuit.

[0060] Specifically, the varactor diode and the ceramic rod add capacitance to the original equivalent circuit to achieve the purpose of frequency modulation, wherein the equivalent circuit diagram can be as follows Figure 4 As shown, in Figure 4 In the figure, inductor L1 and capacitor C1 are equivalent circuits of the original microwave resonant cavity 200; C2 is the variable capacitor introduced by the ceramic rod; and C3 is the variable capacitor introduced by the varactor diode. Therefore, the resonant frequency formula of this resonant circuit can be expressed as:

[0061]

[0062] It should be understood that both the varactor diode and the ceramic rod have the function of frequency modulation. Therefore, by changing the capacitance of the varactor diode and the depth of the ceramic rod, the frequency of the microwave resonant cavity 200 can be changed. For example, the embodiment of the present application can be designed with an electrically tuned frequency resonant cavity with a resonant frequency of about 8 GHz. The tuning range of the ceramic rod is 300 MHz, and the tuning range of the varactor diode is 20 MHz. The effect diagram of the tuned resonant frequency is as shown below. Figure 5 shown.

[0063] According to the electrically tunable frequency resonant cavity of the present application, a microwave source is excited into the microwave resonant cavity through a coupling port to form microwaves that couple with the quantum bit. A voltage is then applied to the microwave resonant cavity via a first frequency modulation component to adjust the resonant frequency of the microwave resonant cavity, thereby simulating each state of the quantum bit. This solves the problems of the related art, such as the difficulty in setting up a test platform and the inability of the resonant cavity to tune the resonant frequency and simulate different quantum bit states. By precisely controlling the resonant frequency of the resonant cavity through an applied voltage, the quantum bit state can be simulated in a quantum monitoring system at room temperature. This facilitates the debugging of the readout equipment in the measurement and control system before the actual operation of the quantum computing chip.

[0064] Next, a simulation method based on an electrically tuned frequency resonant cavity according to an embodiment of the present application will be described with reference to the accompanying drawings.

[0065] Figure 6 This is a flow chart of a simulation method based on an electrically tuned frequency resonant cavity according to an embodiment of the present application.

[0066] like Figure 6 As shown, the simulation method based on the electrically tuned frequency resonant cavity adopts Figure 1 The electrically tuned frequency resonant cavity shown in the embodiment comprises the following steps:

[0067] S601, obtaining the applied voltage of the microwave resonant cavity.

[0068] S602: The microwave source excites the microwave resonant cavity from the coupling port to form microwaves to couple with the quantum bit.

[0069] S603 , applying a voltage to the microwave resonant cavity, adjusting the resonant frequency of the microwave resonant cavity, and simulating each state of the quantum bit.

[0070] According to the simulation method based on an electrically tuned frequency resonant cavity of the present application, a coupling port is provided in the microwave resonant cavity. A microwave source is excited from the coupling port to form microwaves in the microwave resonant cavity to couple with the quantum bit. A voltage is then applied to the microwave resonant cavity via a first frequency modulation component to adjust the resonant frequency of the microwave resonant cavity, thereby simulating each state of the quantum bit. This solves the problems of the related art, such as the difficulty in setting up a test platform, the inability of the resonant cavity to tune the resonant frequency, and the inability to simulate different quantum bit states. By precisely controlling the resonant frequency of the resonant cavity through an applied voltage, the simulation of each quantum bit state in the quantum monitoring system can be achieved at room temperature, thereby assisting in the debugging of the readout equipment in the measurement and control system before the actual operation of the quantum computing chip.

[0071] In addition, an embodiment of the present application also proposes an analog device based on an electrically tuned frequency resonant cavity.

[0072] Figure 7 Block diagram of the simulation device based on the electrically tunable frequency resonant cavity.

[0073] like Figure 7 As shown, the simulation device based on the electrically tuned frequency resonant cavity adopts Figure 1 In the embodiment shown, the simulation device 20 based on the electrically tuned frequency resonant cavity includes: an acquisition module 21 , a generation module 22 and a simulation module 23 .

[0074] The acquisition module 21 is used to obtain the applied voltage of the microwave resonant cavity;

[0075] A generating module 22 is configured to generate microwaves from a microwave source through a coupling port in a microwave resonant cavity to couple with the quantum bit;

[0076] The simulation module 23 is used to apply a voltage to the microwave resonant cavity, adjust the resonant frequency of the microwave resonant cavity, and simulate each state of the quantum bit.

[0077] According to the simulation device based on an electrically tuned frequency resonant cavity of the present application, a coupling port is provided in the microwave resonant cavity. A microwave source is excited from the coupling port to form microwaves in the microwave resonant cavity to couple with the quantum bit. A voltage is then applied to the microwave resonant cavity via a first frequency modulation component to adjust the resonant frequency of the microwave resonant cavity, thereby simulating each state of the quantum bit. This solves the problems of the related art, such as the difficulty in setting up a test platform and the inability of the resonant cavity to tune the resonant frequency and simulate different quantum bit states. By precisely controlling the resonant frequency of the resonant cavity through an applied voltage, the device can simulate each state of the quantum bit in the quantum monitoring system at room temperature, thereby facilitating the debugging of the readout equipment in the measurement and control system before the actual operation of the quantum computing chip.

[0078] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or N embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine different embodiments or examples described in this specification and features of different embodiments or examples without contradiction.

[0079] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of technical features indicated. Thus, a feature specified as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of this application, "N" means at least two, for example, two, three, etc., unless otherwise specifically defined.

[0080] Any process or method description in a flowchart or otherwise described herein may be understood to represent a module, fragment or portion of code comprising one or more executable instructions for implementing the steps of a custom logical function or process, and the scope of the preferred embodiments of the present application includes alternative implementations in which functions may be performed out of the order shown or discussed, including performing functions in a substantially simultaneous manner or in reverse order depending on the functions involved, which should be understood by those skilled in the art to which the embodiments of the present application belong.

[0081] The logic and / or steps represented in the flowcharts or otherwise described herein, for example, can be considered as a sequenced list of executable instructions for implementing the logical functions, and can be embodied in any computer-readable medium for use by, or in conjunction with, an instruction execution system, apparatus, or device (e.g., a computer-based system, a system including a processor, or other system that can fetch and execute instructions from an instruction execution system, apparatus, or device). For purposes of this specification, a "computer-readable medium" can be any device that can contain, store, communicate, propagate, or transport a program for use by, or in conjunction with, an instruction execution system, apparatus, or device. More specific examples (a non-exhaustive list) of computer-readable media include the following: an electrical connection with one or N wires (electronic devices), a portable computer disk cartridge (magnetic device), random access memory (RAM), read-only memory (ROM), erasable and programmable read-only memory (EPROM or flash memory), fiber optic devices, and a portable compact disc read-only memory (CDROM). Furthermore, the computer-readable medium may even be paper or other suitable medium on which the program is printed, since the program may be obtained electronically, for example, by optically scanning the paper or other medium and then editing, interpreting or otherwise processing it in a suitable manner if necessary, and then storing it in a computer memory.

[0082] It should be understood that various parts of the present application can be implemented using hardware, software, firmware, or a combination thereof. In the above embodiment, the N steps or methods can be implemented using software or firmware stored in a memory and executed by a suitable instruction execution system. For example, if implemented using hardware, as in another embodiment, any one of the following technologies known in the art or a combination thereof can be used to implement: a discrete logic circuit having a logic gate circuit for implementing a logic function on a data signal, an application-specific integrated circuit having a suitable combination of logic gate circuits, a programmable gate array (PGA), a field programmable gate array (FPGA), etc.

[0083] Those skilled in the art will appreciate that all or part of the steps in the method for implementing the above-mentioned embodiment can be completed by instructing related hardware through a program, and the program can be stored in a computer-readable storage medium. When the program is executed, it includes one or a combination of the steps of the method embodiment.

[0084] In addition, the functional units in the various embodiments of the present application may be integrated into a processing module, or each unit may exist physically separately, or two or more units may be integrated into a module. The above-mentioned integrated module may be implemented in the form of hardware or in the form of a software functional module. If the integrated module is implemented in the form of a software functional module and sold or used as an independent product, it may also be stored in a computer-readable storage medium.

[0085] The storage medium mentioned above may be a read-only memory, a magnetic disk, or an optical disk, etc. Although the embodiments of the present application have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present application. Persons skilled in the art may make changes, modifications, substitutions, and variations to the above embodiments within the scope of the present application.

Claims

1. An electrically tuned frequency resonant cavity, characterized in that: include: microwave source; A microwave resonant cavity is provided with a coupling port, and the microwave source is excited from the coupling port to form microwaves in the microwave resonant cavity to couple with the quantum bit; as well as a first frequency modulation component, configured to adjust the resonant frequency of the microwave resonant cavity by applying a voltage to the microwave resonant cavity, thereby simulating the two states of 0 and 1 of the quantum bit; The first frequency modulation component includes a varactor diode.

2. The electrically tuned frequency resonant cavity according to claim 1, characterized in that: Also includes: The second frequency modulation component is used to adjust the resonant frequency of the microwave resonant cavity to a preset range.

3. The electrically tuned frequency resonant cavity according to claim 2, wherein: The preset range is obtained from the tuning range of the second frequency modulation component.

4. The electrically tuned frequency resonant cavity according to claim 2 or 3, characterized in that: The second frequency modulation component is a ceramic rod.

5. The electrically tuned frequency resonant cavity according to claim 1, wherein: Also includes: A microwave leakage prevention component is provided at the voltage input end of the microwave resonance cavity.

6. The electrically tuned frequency resonant cavity according to claim 5, characterized in that: The microwave leakage prevention component is an impedance variation filter.

7. The electrically tuned frequency resonant cavity according to claim 5, characterized in that: The microwave leakage-proof component is a microwave leakage-proof flange.

8. A simulation method based on an electrically tuned frequency resonant cavity, characterized in that: Using the electrically tunable frequency resonant cavity according to any one of claims 1 to 7, the method comprises the following steps: obtaining an applied voltage of the microwave resonant cavity; The microwave source excites the microwave from the coupling port to form microwaves in the microwave resonant cavity to couple with the quantum bit; The applied voltage is applied to the microwave resonant cavity to adjust the resonant frequency of the microwave resonant cavity to simulate the two states of 0 and 1 of the quantum bit.

9. An analog device based on an electrically tuned frequency resonant cavity, characterized in that: The electrically tunable frequency resonant cavity according to any one of claims 1 to 7 is used, wherein the device comprises: An acquisition module, configured to acquire an applied voltage of the microwave resonant cavity; A generating module, configured to excite the microwave source from the coupling port to form microwaves in the microwave resonant cavity to couple with the quantum bit; The simulation module is used to apply the applied voltage to the microwave resonant cavity, adjust the resonant frequency of the microwave resonant cavity, and simulate the two states of 0 and 1 of the quantum bit.

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