Detection device and assay device

Abstract

A detection device and an assay device miniaturize a detection device that emits light toward a living body and detects light returned from the living body. A detection device (3) has a semiconductor substrate (20), a first photoelectric conversion section (31) formed on the semiconductor substrate (20), a first light emitting layer (671) formed by laminating the semiconductor substrate (20), and a first light filtering layer (32) formed by laminating the first photoelectric conversion section.

Description

Technical Field

[0001] The present invention relates to a detection device and a measuring device having a light-emitting part and a light-receiving part. Background Technology

[0002] Various non-invasive measurement techniques for determining biological information such as pulse have been proposed in the past. Patent documents 1 and 2 describe a detection device having a light-emitting part that emits light toward a biological body and a light-receiving part that receives light reflected by the biological body. By analyzing the signal output from the light-receiving part of this detection device, biological information can be obtained.

[0003] The detection device (detection element) of Patent Document 1 has a substrate on which a light source (organic EL element, LED) is mounted as a light-emitting part. On the substrate, a photodiode, phototransistor, photoconductive unit or image sensor, etc., are mounted as light-receiving parts adjacent to the light source.

[0004] The detection device (optical sensor module) in Patent Document 2 uses a flexible printed circuit board as the substrate on which a light-emitting part and a light-receiving part are configured. The light-emitting part is an LED, and the light-receiving part is a photodiode. By using a flexible printed circuit board, the substrate can be made thinner, thus enabling the detection device to be made thinner.

[0005] Patent Document 1: Japanese Patent Application Publication No. 2018-149157

[0006] Patent Document 2: Japanese Patent Application Publication No. 2018-042597 Summary of the Invention

[0007] In the detection devices described in Patent Documents 1 and 2, the LED, which serves as the light-emitting part, and the photodiode, which serves as the light-receiving part, are each chip-based and can be processed as components. Therefore, when mounting them on the substrate surface, a certain gap needs to be set between the light-emitting part and the light-receiving part according to the chip mounting accuracy. Thus, there are limits to the miniaturization of the detection device.

[0008] To address the aforementioned issues, the detection device of the present invention is characterized by comprising: a semiconductor substrate; a light-emitting portion disposed on the semiconductor substrate and emitting light toward a living organism; and a light-receiving portion disposed on the semiconductor substrate and receiving the light from the living organism, the light-receiving portion comprising: a first photoelectric conversion portion that receives the light; and a first filter layer that limits the incident angle of the light incident on the first photoelectric conversion portion.

[0009] The measuring device of the present invention is characterized by having: the detection device described above; and an information analysis unit that determines biological information based on a detection signal representing the detection result of the detection device. Attached Figure Description

[0010] Figure 1 This is a side view of the measuring device using the present invention.

[0011] Figure 2 This is a block diagram illustrating the functional structure of the measuring device to which the present invention is applied.

[0012] Figure 3 It is a top view that schematically shows the planar shapes of the light-receiving part and the light-emitting part.

[0013] Figure 4 It is a cross-sectional view schematically showing the cross-sectional structure of the light-receiving part and the light-emitting part.

[0014] Figure 5 It is a cross-sectional view schematically showing the cross-sectional structure of the light-receiving part and the light-emitting part when each light-emitting element has a color filter.

[0015] Figure 6 This is a schematic cross-sectional view showing the cross-sectional structure of the light-receiving part and the light-emitting part without the angle-limiting filter layer.

[0016] Figure 7 It is a top view schematically showing the planar shapes of the light-receiving and light-emitting parts of the modified example.

[0017] Label Explanation

[0018] 1: Housing; 2: Belt; 3: Detection device; 4: Display device; 5: Control device; 6: Storage device; 10: Detection surface; 11: Light-receiving part; 12: Light-emitting part; 13: Driving circuit; 14: Output circuit; 20: Semiconductor substrate; 21: First surface; 31: First photoelectric conversion part; 32: First filter layer; 33: Second photoelectric conversion part; 34: Second filter layer; 35: Angle-limiting filter layer; 36: Angle-limiting filter; 37: Bandpass filter Layer; 41: n-type semiconductor layer; 42: p-type semiconductor layer; 43: n-type semiconductor layer; 44: light-receiving surface; 51: conductive layer; 52: interlayer insulating film; 53: light-shielding body; 54: opening; 55: conductive layer; 56: interlayer insulating film; 57: conductive plug; 58: multilayer film; 59: light-shielding wall; 61: wiring layer; 62: organic EL element forming part; 63: sealing layer; 64: reflective layer; 65: first electrode; 66: second electrode; 67 71: Organic light-emitting layer; 72: Transparent resin layer; 100: Cover plate; 111: Measuring device; 112: First light-receiving part; 113, 115: Anode electrode; 114, 116: Cathode electrode; 121: First light-emitting element; 122: Second light-emitting element; 123: Third light-emitting element; 126, 127, 128: Anode contact; 129: Cathode contact; 351: First region; 352: Second region; 621: First Emitting region; 622: Second emitting region; 623: Third emitting region; 671: First emitting layer; 672: Second emitting layer; 673: Third emitting layer; 681: First color filter; 682: Second color filter; 683: Third color filter; C1, C2, C3, C4: Terminals; D1, D2, D3, D4: Terminals; LG: First light; LR: Second light; LI: Third light; M: Measurement site; S, S1, S2, S3: Detection signals. Detailed Implementation

[0019] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. Furthermore, in the following figures, each component is schematically illustrated to a degree that allows for easy identification; the actual dimensions and proportions may differ from those shown in the figures.

[0020] <Measuring Apparatus>

[0021] Figure 1 This is a side view of the measuring device 100 using the present invention. The measuring device 100 is a non-invasive biological measuring device for measuring biological information. The measuring device 100 is used towards the part of the subject's body (biology) that is the subject of measurement (hereinafter referred to as "measurement part M"). Figure 1In the example shown, the measuring device 100 is a watch-type portable device with a housing 1 and a strap 2. The measuring site M is the subject's wrist. The measuring device 100 is used by wrapping the strap 2 around the subject's wrist and wearing the measuring surface 10 of the housing 1 with the skin side of the wrist (measuring site M) facing it.

[0022] In this specification, the X, Y, and Z directions are mutually perpendicular. The Z direction is the normal direction of the detection surface 10. The +Z direction is the direction from the detection surface 10 toward the measuring part M, and the -Z direction is the direction from the measuring part M toward the detection surface 10.

[0023] In this instruction manual, the subject's pulse (e.g., pulse rate) and oxygen saturation (SpO2) are exemplified as biological information. Pulse refers to the change in volume within blood vessels over time in conjunction with the heartbeat. Oxygen saturation refers to the percentage (%) of oxygen-bound hemoglobin in the subject's blood and is an indicator used to evaluate the subject's respiratory function.

[0024] Figure 2 This is a block diagram illustrating the functional structure of the measuring device 100 to which the present invention is applied. For example... Figure 2 As shown, the measuring device 100 includes a control device 5, a storage device 6, a display device 4, and a detection device 3. The control device 5 and the storage device 6 are disposed inside the housing 1. The detection device 3 is disposed on the detection surface 10. The display device 4 is disposed on the surface of the housing 1 opposite to the detection surface 10. Under the control of the control device 5, the display device 4 displays various images containing the measurement results. The display device 4 is, for example, a liquid crystal display panel.

[0025] In addition, the measuring device 100 Figure 2 In addition to the functional structure shown, it can also be configured to have operation buttons, touch panels, or other operation units disposed on the surface of the housing 1, and input operation signals corresponding to the operation of the operation units to the control device 5. Furthermore, it may also have a communication unit for outputting measurement results to the outside and inputting signals from the outside to the control device 5. Alternatively, as a unit for informing of measurement results, it may also have a sound output unit and a vibration unit.

[0026] like Figure 2 As shown, the detection device 3 includes a light-receiving unit 11, a light-emitting unit 12, a driving circuit 13, and an output circuit 14. Furthermore, one or both of the driving circuit 13 and the output circuit 14 can be configured as external circuitry of the detection device 3. That is, the driving circuit 13 and the output circuit 14 can be omitted from the detection device 3.

[0027] The detection device 3 is a reflective optical sensor module that emits light from the detection surface 10 and receives light incident on the detection surface 10 from the measurement portion M, thereby generating a detection signal S. Specifically, in the detection device 3 of this embodiment, a light-receiving portion 11 and a light-emitting portion 12 are disposed on the detection surface 10. The light-emitting portion 12 has a first light-emitting element 121, a second light-emitting element 122, and a third light-emitting element 123. The first light-emitting element 121, the second light-emitting element 122, and the third light-emitting element 123 each emit light of different wavelengths from the detection surface 10.

[0028] The first light-emitting element 121 emits a first light LG. The first light LG is, for example, green light with a green wavelength of 520 nm to 550 nm, and has a peak wavelength of 520 nm. The second light-emitting element 122 emits a second light LR. The second light LR is, for example, red light with a red wavelength of 600 nm to 800 nm, and has a peak wavelength of 660 nm. The third light-emitting element 123 emits a third light LI. The third light LI is, for example, near-infrared light with a near-infrared wavelength of 800 nm to 1300 nm. The third light LI has, for example, a peak wavelength of 905 nm. Furthermore, the wavelength of the light emitted by each light-emitting element is not limited to the aforementioned wavelength ranges.

[0029] The driving circuit 13 supplies driving current to cause the first light-emitting element 121, the second light-emitting element 122, and the third light-emitting element 123 to emit light respectively. For example, the driving circuit 13 causes the first light-emitting element 121, the second light-emitting element 122, and the third light-emitting element 123 to emit light periodically in a time-division manner. The light emitted from the first light-emitting element 121, the second light-emitting element 122, and the third light-emitting element 123 enters the measuring portion M from the detection surface 10, and after being repeatedly reflected and scattered inside the measuring portion M, it exits from the measuring portion M and enters the light-receiving portion 11 disposed on the detection surface 10.

[0030] The light-receiving unit 11 has a first light-receiving unit 111 and a second light-receiving unit 112. The first light-receiving unit 111 and the second light-receiving unit 112 respectively generate a detection signal corresponding to the intensity of the received light.

[0031] The first light-receiving unit 111 receives the first light LG emitted from the first light-emitting element 121 and propagating inside the measuring region M, and generates a detection signal corresponding to its light intensity. The second light-receiving unit 112 receives the second light LR emitted from the second light-emitting element 122 and propagating inside the measuring region M, or the third light LI emitted from the third light-emitting element 123 and propagating inside the measuring region M, and generates a detection signal corresponding to its light intensity.

[0032] The output circuit 14 is configured to include, for example, an A / D converter that converts the detection signals generated by the first light-receiving unit 111 and the second light-receiving unit 112 from analog to digital; and an amplifier circuit that amplifies the converted detection signals (all omitted from the figure) to generate multiple detection signals S (S1, S2, S3) corresponding to different wavelengths.

[0033] Detection signal S1 is a signal indicating the light intensity received by the first light-receiving section 111 when it receives the first light LG (green light) emitted from the first light-emitting element 121. Detection signal S2 is a signal indicating the light intensity received by the second light LR (infrared light) emitted from the second light-emitting element 122. Detection signal S3 is a signal indicating the light intensity received by the second light-receiving section 112 when it receives the third light LI (near-infrared light) emitted from the third light-emitting element 123.

[0034] Generally speaking, the amount of light absorbed by blood differs when blood vessels dilate and constrict. Therefore, each detection signal S becomes a pulse signal containing a periodic variation of the pulsating component (volume pulse) of the artery inside the measurement site M.

[0035] The driving circuit 13 and the output circuit 14 are mounted on the substrate, for example, in the form of an IC chip. As will be described later, in this embodiment, the light-receiving part 11 and the light-emitting part 12 are formed on the same semiconductor substrate 20 (see reference 10). Figure 3 , Figure 4 The driving circuit 13 and the output circuit 14 are mounted on the circuit configuration section of the semiconductor substrate 20, on which the light-receiving portion 11 and the light-emitting portion 12 are formed. Alternatively, the driving circuit 13 and the output circuit 14 may be mounted on a substrate separate from the semiconductor substrate 20 on which the light-receiving portion 11 and the light-emitting portion 12 are formed. Or, as described above, the driving circuit 13 and the output circuit 14 may be configured as external circuits of the detection device 3.

[0036] The control device 5 is a processing unit such as a CPU (Central Processing Unit) or FPGA (Field-Programmable Gate Array) that controls the entire measuring device 100. The storage device 6, for example, is composed of a non-volatile semiconductor memory, storing the program executed by the control device 5 and various data used by the control device 5. Alternatively, a structure can be adopted that distributes the functions of the control device 5 across multiple integrated circuits, or a structure that implements some or all of the functions of the control device 5 through dedicated electronic circuits. Furthermore, in Figure 2In the illustration, the control device 5 and the storage device 6 are shown as separate elements, but the control device 5 with the built-in storage device 6 can also be implemented by means of, for example, ASIC (Application Specific Integrated Circuit).

[0037] The control device 5 determines the subject's biological information by executing a program stored in the storage device 6 based on multiple detection signals S (S1, S2, S3) generated by the detection device 3. Specifically, the control device 5 determines the subject's pulse based on the detection signal S1, which represents the intensity of light received by the first light-receiving part 111 to the first light LG (green light). For example, the control device 5 can determine the subject's pulse rate based on the detection signal S1. In addition, the control device 5 can determine the subject's oxygen saturation (SpO2) by analyzing the detection signal S2, which represents the intensity of light received by the light-receiving part 111 to the second light LR (red light) and the detection signal S3, which represents the intensity of light received by the light-receiving part 111 to the third light LI (near-infrared light).

[0038] As described above, the control device 5 functions as an information analysis unit that determines biological information based on the detection signal S representing the detection result of the detection device 3. The control device (information analysis unit) 5 causes the display device 4 to display the biological information determined based on the detection signal S. Furthermore, the measurement results can also be communicated to the user via sound output. In cases where the pulse rate or oxygen saturation fluctuates outside the prescribed range, a warning (possible impairment of bodily function) can also be issued to the user.

[0039] <Detailed Structure of the Light-Emitting and Light-Receiving Parts>

[0040] Figure 3 It is a top view schematically showing the planar shapes of the light-receiving part 11 and the light-emitting part 12. Figure 4 It is shown schematically. Figure 3 A cross-sectional view of the light-receiving part 11 and the light-emitting part 12, showing the cross-sectional structure along... Figure 3 The cross-sectional structure is cut at position AA. In this embodiment, the light-receiving portion 11 and the light-emitting portion 12 are formed on the same semiconductor substrate 20. The semiconductor substrate 20 is formed of a semiconductor material such as silicon (Si) and is used as the substrate for forming the light-receiving portion 11 and the light-emitting portion 12. Figure 4 As shown, the light-receiving portion 11 and the light-emitting portion 12 are formed on the first surface 21 of the semiconductor substrate 20. The first surface 21 is a surface facing the +Z direction. The light-receiving portion 11 and the light-emitting portion 12 are formed on the first surface 21 at adjacent positions.

[0041] As described above, the light-receiving portion 11 has a first light-receiving portion 111 and a second light-receiving portion 112. Figure 4As shown, the first light-receiving portion 111 is formed adjacent to the light-emitting portion 12. The second light-receiving portion 112 is disposed on the opposite side of the light-emitting portion 12 relative to the first light-receiving portion 111. Therefore, the second light-receiving portion 112 is farther away from the light-emitting portion 12 than the first light-receiving portion 111.

[0042] like Figure 3 As shown, in this embodiment, the light-receiving portion 11 is rectangular. The light-receiving portion 11 has a shape in which the second light-receiving portion 112 is disposed in the center, and the first light-receiving portion 111 surrounds the outer periphery of the second light-receiving portion 112 in a strip shape with a certain width. The light-receiving portion 11 has an anode electrode 113 and a cathode electrode 114 corresponding to the first light-receiving portion 111, and an anode electrode 115 and a cathode electrode 116 corresponding to the second light-receiving portion 112. These electrodes are electrically connected to terminals C1, C2, C3, and C4 disposed on the outside of the light-receiving portion 11 and the light-emitting portion 12 via wiring formed within the angle-limiting filter layer 35 described later.

[0043] The light-emitting portion 12 is shaped to surround the outer periphery of the light-receiving portion 11. A first light-emitting element 121 emitting a first light LG (green light) is disposed in the inner peripheral region of the light-emitting portion 12, surrounding the outer periphery of the light-receiving portion 11 in a strip shape with a certain width. A second light-emitting element 122 emitting a second light LR (red light) surrounds the outer periphery of the first light-emitting element 121 in a strip shape with a certain width. A third light-emitting element 123 emitting a third light LI (near-infrared light) is disposed in the outer peripheral region of the light-emitting portion 12, surrounding the outer periphery of the second light-emitting element 122 in a strip shape with a certain width. Therefore, the second light-emitting element 122 is farther away from the light-receiving portion 11 than the first light-emitting element 121. The third light-emitting element 123 is farther away from the light-receiving portion 11 than the second light-emitting element 122.

[0044] The light-emitting part 12 has anode contacts 126, 127, and 128 corresponding to the first light-emitting element 121, the second light-emitting element 122, and the third light-emitting element 123, respectively, and a common cathode contact 129. The anode contacts 126, 127, and 128 and the cathode contact 129 are electrically connected to terminals D1, D2, D3, and D4 disposed on the outside of the light-receiving part 11 and the light-emitting part 12 via wiring formed in the wiring layer 61 described later.

[0045] <Cross-sectional structure of the light-receiving part>

[0046] like Figure 4As shown, the first light-receiving portion 111 has a first photoelectric conversion portion 31 formed within a layer of the semiconductor substrate 20 and a first filter layer 32 stacked on the +Z direction surface of the first photoelectric conversion portion 31. The second light-receiving portion 112 has: a second photoelectric conversion portion 33 formed within a layer of the semiconductor substrate 20 at a position adjacent to the first photoelectric conversion portion 31; and a second filter layer 34 stacked on the surface of the second photoelectric conversion portion 33. The second photoelectric conversion portion 33 is farther away from the light-emitting portion 12 than the first photoelectric conversion portion 31.

[0047] The first photoelectric conversion unit 31 and the second photoelectric conversion unit 33 respectively have photodiodes such as PIN photodiodes or PN photodiodes, or phototransistors. Figure 4 In the example shown, the first photoelectric conversion unit 31 and the second photoelectric conversion unit 33 respectively have an n-type semiconductor layer 41 embedded in the semiconductor substrate 20, a p-type semiconductor layer 42 formed inside the n-type semiconductor layer 41, and an n-type semiconductor layer 43 embedded inside the p-type semiconductor layer 42. The p-type semiconductor layer 42 is exposed on the first surface 21 of the semiconductor substrate 20, forming a light-receiving surface 44 for light passing through the first filter layer 32 or the second filter layer 34 to be incident.

[0048] The first photoelectric conversion unit 31 and the second photoelectric conversion unit 33 are embedded in the surface layer of the semiconductor substrate 20 on the side closest to the first surface 21. The light-receiving surface 44 of the first photoelectric conversion unit 31 and the light-receiving surface 44 of the second photoelectric conversion unit 33 are located on the same plane as the first surface 21 of the semiconductor substrate 20. The first filter layer 32 and the second filter layer 34 are located in the +Z direction relative to the first surface 21.

[0049] An angle-limiting filter layer 35 is formed on the first surface 21 of the semiconductor substrate 20, covering the entire area where the first photoelectric conversion unit 31 and the second photoelectric conversion unit 33 are disposed. The angle-limiting filter layer 35 has a first region 351 that overlaps with the first photoelectric conversion unit 31 and a second region 352 that overlaps with the second photoelectric conversion unit 33. A light-shielding material constituting the angle-limiting filter 36 is disposed in the first region 351 and the second region 352, respectively.

[0050] The first filter layer 32 has a layer structure obtained by laminating a bandpass filter layer 37 on the surface of a first region 351 in the angle-limiting filter layer 35. The second filter layer 34 is composed only of the second region 352 of the angle-limiting filter layer 35. That is, the difference between the first light-receiving part 111 and the second light-receiving part 112 is that the first light-receiving part 111 has a bandpass filter layer 37, while the second light-receiving part 112 does not have a bandpass filter layer 37; the other structures are the same.

[0051] For example, the angle-limiting filter layer 35 includes: a conductive layer 51 made of a light-reflective material such as an aluminum-copper alloy (AlCu) or titanium nitride (TIN); an interlayer insulating film 52 made of a light-transmitting material such as silicon dioxide (SiO2) or silicon nitride (SiN); and a light-shielding body 53 formed inside the interlayer insulating film 52. The light-shielding body 53 is, for example, a conductive plug made of a light-absorbing material such as tungsten (W). The angle-limiting filter 36 includes the conductive layer 51 and the light-shielding body 53, and the light-shielding body 53 is arranged in a columnar shape inside the opening 54, wherein the conductive layer 51 and the light-shielding body 53 are arranged to form an opening 54 that overlaps with the light-receiving surface 44 made of the p-type semiconductor layer 42.

[0052] The angle-limiting filter 36, through the arrangement of the conductive layer 51 and the light-shielding body 53, has the characteristic of allowing light incident at an angle smaller than a predetermined incident angle (hereinafter referred to as the permissible incident angle) to pass through, and blocking light incident at an angle larger than the permissible incident angle to pass through. Therefore, the first filter layer 32 limits the incident angle of light incident on the light-receiving surface 44 of the first photoelectric conversion unit 31. In addition, the second filter layer 34 limits the incident angle of light incident on the light-receiving surface 44 of the second photoelectric conversion unit 33. Therefore, the detection device 3 allows light that has propagated within the biological body and then incident on the detection surface 10 of the detection device 3 at the permissible incident angle to pass through, and can block light incident at an angle larger than the permissible incident angle, such as external light like sunlight and light that has not entered the biological body.

[0053] A portion of the conductive layer 51 and the light-shielding body 53 (conductive plug) disposed on the angle limiting filter layer 35 constitutes wiring electrically connected to the anode electrode 113 and cathode electrode 114 of the first photoelectric conversion unit 31, and wiring electrically connected to the anode electrode 115 and cathode electrode 116 of the second photoelectric conversion unit 33.

[0054] The bandpass filter layer 37 includes, for example, a multilayer film 58 formed by alternating layers of thin films made of low-refractive-index materials such as silicon dioxide (SiO2) and thin films made of high-refractive-index materials such as titanium dioxide (TiO2); and a light-shielding wall 59 surrounding the outer periphery of the multilayer film 58. The light-shielding wall 59, for example, blocks the second light LR (red light) and the third light LI (near-infrared light). Alternatively, the light-shielding wall 59 may be omitted. The multilayer film 58 has the characteristic of selectively allowing the first light LG (green light) to pass through, while absorbing and blocking the second light LR (red light) and the third light LI (near-infrared light), which are light in other wavelength bands.

[0055] <Cross-sectional structure of the light-emitting part>

[0056] like Figure 4As shown, the light-emitting portion 12 includes: a wiring layer 61 formed on the first surface 21 of the semiconductor substrate 20; an organic EL element forming portion 62 formed on the surface of the wiring layer 61; and a sealing layer 63 covering the entire extent and surrounding area of ​​the organic EL element forming portion 62 from the +Z direction. The sealing layer 63 is made of, for example, a light-transmitting inorganic material such as silicon dioxide (SiO2) or silicon oxynitride (SiON). Furthermore, the sealing layer 63 may also contain other materials to the extent that it does not reduce the sealing performance. Additionally, the light-emitting portion 12 includes a reflective layer 64 disposed within the wiring layer 61. The reflective layer 64 is made of, for example, a light-reflective material such as an aluminum-copper alloy (AlCu).

[0057] Although Figure 4 The diagram is omitted, but the wiring layer 61 extends from the first surface 21 of the semiconductor substrate 20 to the outer periphery of the sealing layer 63. Terminals D1, D2, D3, and D4, which are connected to the light-emitting portion 12, are formed on the surface of the wiring layer 61 extending to the outer periphery of the sealing layer 63 (see reference). Figure 3 ) and terminals C1, C2, C3, C4 (refer to) connected to the light-receiving part 11 Figure 3 ).

[0058] The wiring layer 61 may include, for example, a conductive layer 55 made of a material such as aluminum-copper alloy (AlCu) or titanium nitride (TIN); an interlayer insulating film 56 made of a light-transmitting material such as silicon dioxide (SiO2) or silicon nitride (SiN); and a conductive plug 57 made of a material such as tungsten (W).

[0059] like Figure 4 As shown, the multiple interlayer insulating films 56 constituting the wiring layer 61 are each formed in the same layer as the interlayer insulating film 52 constituting the angle-confining filter layer 35, and the interlayer insulating films 56 and 52 are formed as continuous layers. Furthermore, the conductive layer 55 disposed on the wiring layer 61 and the conductive layer 51 disposed on the angle-confining filter layer 35 are formed in the same layer. Therefore, the angle-confining filter layer 35 and the wiring layer 61 can be formed on the semiconductor substrate 20 in the same process. Furthermore, the layer structures of the wiring layer 61 and the angle-confining filter layer 35 are not limited to... Figure 4 The structure shown.

[0060] exist Figure 4In the example shown, the wiring layer 61 and the angle-limiting filter layer 35 are approximately equal in position and height in the Z direction. An organic EL element forming portion 62 is formed on the surface of the wiring layer 61, and the height (thickness) of the organic EL element forming portion 62 in the Z direction is less than the height (thickness) of the bandpass filter layer 37 in the Z direction. Therefore, the first light-emitting element 121, the second light-emitting element 122, and the third light-emitting element 123 are all disposed within the height range of the first filter layer 32 in the Z direction. That is, the first light-emitting element 121, the second light-emitting element 122, and the third light-emitting element 123 are disposed at the same position as the first filter layer 32 in the Z direction. Furthermore, the relationship between the height (thickness) of the bandpass filter layer 37 and the organic EL element forming portion 62 in the Z direction is not limited to... Figure 4 The structure shown.

[0061] The organic EL element forming section 62 has a first light-emitting region 621 constituting a first light-emitting element 121, a second light-emitting region 622 constituting a second light-emitting element 122, and a third light-emitting region 623 constituting a third light-emitting element 123. The first light-emitting region 621, the second light-emitting region 622, and the third light-emitting region 623 are configured such that the first light-emitting region 621 is disposed on the side closest to the light-receiving section 11, and the first light-emitting region 621, the second light-emitting region 622, and the third light-emitting region 623 are arranged sequentially in the direction away from the light-receiving section 11.

[0062] The first light-emitting region 621, the second light-emitting region 622, and the third light-emitting region 623 each have a first electrode 65 and a second electrode 66 opposed in the Z direction, and an organic light-emitting layer 67 formed between the first electrode 65 and the second electrode 66. The organic light-emitting layer 67 contains an organic material that emits light when an electric current is supplied. The first light-emitting region 621 has a first light-emitting layer 671 containing a green light-emitting material as its organic light-emitting layer 67. The second light-emitting region 622 has a second light-emitting layer 672 containing a red light-emitting material as its organic light-emitting layer 67. The third light-emitting region 623 has a third light-emitting layer 673 containing a near-infrared light-emitting material as its organic light-emitting layer 67. The first light-emitting layer 671, the second light-emitting layer 672, and the third light-emitting layer 673 are disposed in the same layer.

[0063] In addition, the first light-emitting region 621, the second light-emitting region 622, and the third light-emitting region 623 may also be located between the first electrode 65 and the second electrode 66, and in addition to the organic light-emitting layer 67, they also have a hole injection layer, a hole transport layer, an electron injection layer, and an electron transport layer.

[0064] The first light-emitting element 121, the second light-emitting element 122, and the third light-emitting element 123 are top-emitting organic EL elements capable of extracting light from the +Z side of the organic light-emitting layer 67. Each of the first light-emitting element 121, the second light-emitting element 122, and the third light-emitting element 123 has a reflective layer 64 disposed within the wiring layer 61. The reflective layers 64 are formed at positions overlapping the first light-emitting layer 671, the second light-emitting layer 672, and the third light-emitting layer 673 respectively in the -Z direction (i.e., the semiconductor substrate 20 side).

[0065] The first electrode 65 is the anode. The first electrode 65 is, for example, a transparent electrode made of indium tin oxide (ITO). The first electrode 65 is formed on the surface of the wiring layer 61 in the +Z direction. In this embodiment, the first electrode 65 is separated for each light-emitting element. For example, the first electrode 65 is formed at three locations corresponding to the first light-emitting region 621, the second light-emitting region 622, and the third light-emitting region 623, respectively.

[0066] The second electrode 66 is a cathode. The second electrode 66 is, for example, a light-transmitting electrode made of a silver-magnesium alloy (AgMg). The second electrode 66 faces the organic light-emitting layer 67 from the side opposite to the semiconductor substrate 20 (+Z direction). The second electrodes 66 of the three light-emitting elements form a continuous electrode layer extending in the direction in which the three first electrodes 65 are arranged.

[0067] In wiring layer 61, wiring and anode contacts 126, 127, and 128 are formed to connect the first electrodes 65 at three locations to the drive circuit 13, respectively (see reference). Figure 3 The conductive layer 55 and conductive plug 57 are configured in a manner that allows for connection between the second electrode 66 and the GND of the drive circuit 13. Additionally, in the wiring layer 61, wiring for connecting the second electrode 66 to the GND of the drive circuit 13 and cathode contacts 129 are formed (see reference). Figure 3 The conductive layer 55 and conductive plug 57 are configured in a manner that allows for the conductive layer 55 and conductive plug 57 to be arranged in a manner that allows for the wiring structure and driving circuit 13 within the wiring layer 61 to drive the first light-emitting element 121, the second light-emitting element 122 and the third light-emitting element 123 in a passive matrix manner.

[0068] The light-receiving part 11 and the light-emitting part 12 are covered by a cover plate 72 through a transparent resin layer 71. The surface of the cover plate 72 in the +Z direction constitutes the detection surface 10. The cover plate 72 is transparent and can be, for example, a glass plate or a quartz plate. The transparent resin layer 71 is made of a transparent resin such as epoxy resin or acrylic resin.

[0069] <Main Effects of This Implementation Method>

[0070] As described above, the detection device 3 of this embodiment includes a semiconductor substrate 20, a first photoelectric conversion unit 31 formed on the semiconductor substrate 20, a first light-emitting layer 671 formed on the semiconductor substrate 20, and a first filter layer 32 formed on the first photoelectric conversion unit 31.

[0071] More specifically, the detection device 3 of this embodiment includes: a semiconductor substrate 20; a light-emitting portion 12 formed on a first surface 21 of the semiconductor substrate 20; and a light-receiving portion 11 formed on the first surface 21 at a position adjacent to the light-emitting portion 12. The light-receiving portion 11 has a first photoelectric conversion portion 31 formed within a layer of the semiconductor substrate 20, and a first filter layer 32 formed on the surface of the first photoelectric conversion portion 31. The light-emitting portion 12 has a first light-emitting element 121 disposed in the Z direction (normal direction) of the semiconductor substrate 20 at the same position as the first filter layer 32. The first light-emitting element 121 has: a first electrode 65; a light-transmitting second electrode 66 facing the first electrode 65 from the side opposite to the semiconductor substrate 20; and a first light-emitting layer 671 formed between the first electrode 65 and the second electrode 66.

[0072] The measuring device 100 of this embodiment includes: a detection device 3; and a control device 5 as an information analysis unit, which determines biological information based on a detection signal representing the detection result of the detection device 3.

[0073] In the detection device 3 of this embodiment, the light-receiving part 11 and the light-emitting part 12 are formed with a common semiconductor substrate 20 as the substrate, so the clearance between the light-receiving part 11 and the light-emitting part 12 is smaller than before. As in the conventional case where a chip-based LED or photodiode is mounted on the substrate, the clearance between the light-receiving part 11 and the light-emitting part 12 is a millimeter in size. However, by forming the light-receiving part 11 and the light-emitting part 12 using a layer structure technique that directly forms a semiconductor layer, an insulating layer, a conductor layer constituting wiring and electrodes, an organic material layer, etc., on the semiconductor substrate 20, the clearance between the first light-emitting element 121 and the first light-receiving part 111 can be a micrometer in size. Therefore, the detection device 3 can be miniaturized.

[0074] Furthermore, in the detection device 3 of this embodiment, the first photoelectric conversion section 31 of the light-receiving section 11 is formed within a layer of the semiconductor substrate 20, thus suppressing the height of the detection device 3 in the Z direction. Additionally, the organic EL element forming section 62 constituting the first light-emitting element 121 of the light-emitting section 12 is entirely disposed within the height range of the first filter layer 32 in the Z direction. Therefore, the detection device 3 can be made thinner.

[0075] If the gap between the light-receiving part 11 and the light-emitting part 12 can be reduced, the amount of light received from the light-emitting part 12 and returning from the measurement site M to the light-receiving part 11 increases. In particular, when the first light LG emitted from the light-emitting part 12 is green light, the green light only diffuses into a shallower area of ​​the subject's body and returns, so the amount of light received decreases sharply as it moves away from the light-emitting part 12. Therefore, by reducing the gap between the light-receiving part 11 and the light-emitting part 12, the amount of light received from the first light LG (green light) emitted from the light-emitting part 12 can be increased. As a result, even if the amount of light emitted by the first light-emitting element 121 is reduced, the necessary amount of light can be ensured, and thus the power consumption of the light-emitting part 12 can be reduced. Therefore, power saving of the detection device 3 can be achieved. In addition, since more light returning from the measurement site M can be received, the S / N ratio can be improved. As a result, the detection device 100 can determine biological information based on the detection signal S with a high S / N ratio, and thus the measurement accuracy can be improved.

[0076] Furthermore, in the first light-emitting element 121, the second electrode 66, disposed on the side opposite to the semiconductor substrate 20, is a transparent electrode and is a top-emitting type organic EL light-emitting element, thus emitting a large amount of light. Therefore, even if the amount of light emitted is reduced by decreasing the power consumption, the required amount of light can be ensured, thereby reducing the power consumption of the light-emitting section 12. Therefore, power saving of the detection device 3 can be achieved.

[0077] In this embodiment, the light-receiving portion 11 has a second light-receiving portion 112, which has a second photoelectric conversion portion 33 formed within a layer of the semiconductor substrate 20, and a second filter layer 34 formed on the surface of the second photoelectric conversion portion 33. The second photoelectric conversion portion 33 is farther away from the light-emitting portion 12 than the first photoelectric conversion portion 31. Furthermore, the light-emitting portion 12 has a second light-emitting element 122, which emits a second light LR (red light) with a wavelength longer than the first light LG (green light) emitted by the first light-emitting element 121. The second light-emitting element 122 is farther away from the first light-receiving portion 111 than the first light-emitting element 121.

[0078] Furthermore, the light-emitting part 12 has a third light-emitting element 123 that emits a third light LI (near-infrared light) with a wavelength longer than the second light LR. The third light-emitting element 123 is further away from the first light-receiving part 111 than the second light-emitting element 122.

[0079] With this structure, three types of light—LG (green light), LR (red light), and LI (near-infrared light)—can be emitted from the light-emitting unit 12. Furthermore, the light-receiving unit 11 can receive light through two photoelectric conversion units. Therefore, multiple light bands can be received by multiple light-receiving units, enabling the acquisition of a detection signal S1 representing the intensity of the first light LG (green light), a detection signal S2 representing the intensity of the second light LR (red light), and a detection signal S3 representing the intensity of the third light LI (near-infrared light). Moreover, various biological information can be determined based on the detection signals S1, S2, and S3. For example, the pulse rate of a subject can be determined based on the detection signal S1. Furthermore, by analyzing the detection signals S2 and S3, the oxygen saturation of the subject can be determined.

[0080] In this embodiment, the first light-emitting element 121, which emits the first light LG (green light), is positioned closest to the light-receiving unit 11 in the light-emitting unit 12. This configuration allows the light-receiving unit 11 to receive a greater amount of the first light LG (green light) that returns after traveling a short distance within the biological body. Therefore, even when the light emission intensity of the first light-emitting element 121 is suppressed, the first light LG (green light) traveling within the biological body can be sufficiently detected in the light-receiving unit 11. Consequently, the S / N ratio of the detection signal S1, which represents the light intensity of the first light LG (green light), can be improved while reducing the power consumption of the light-emitting unit 12.

[0081] In this embodiment, the first filter layer 32 provided in the first light-receiving portion 111 has a bandpass filter layer 37 that selectively transmits light of a wavelength (i.e., green light) emitted from the first light-emitting element 121 in the light-emitting portion 12. As described above, the first light-receiving portion 111 is positioned closest to the light-emitting portion 12 within the light-receiving portion 11, thus receiving more of the first light LG (green light) that returns after traveling a short distance within the biological body. Therefore, by providing the bandpass filter layer 37 in the first light-receiving portion 111, the second light LR (red light) and the third light LI (near-infrared light) emitted from other light-emitting elements are intercepted, thereby improving the S / N ratio of the detection signal S1, which represents the intensity of the first light LG (green light). Furthermore, since external light of a different wavelength band than green light can be intercepted by the bandpass filter layer 37, noise caused by external light can be reduced. Therefore, the S / N ratio of the detection signal S1, which represents the intensity of the first light LG (green light), can be improved.

[0082] In this embodiment, the first filter layer 32 and the second filter layer 34 have an angle-limiting filter layer 35. The angle-limiting filter layer 35 allows light incident at an angle smaller than the permissible incident angle to pass through, while blocking light incident at an angle larger than the permissible incident angle. Therefore, in the first light-receiving portion 111 and the second light-receiving portion 112, external light incident from a direction different from the measurement site M of the biological body can be blocked, thereby improving the S / N ratio of the detection signal S1 obtained from the first light-receiving portion 111 and improving the S / N ratios of the detection signals S2 and S3 obtained from the second light-receiving portion 112.

[0083] Here, the second filter layer 34 does not have a bandpass filter layer. As described above, compared to the second light LR (red light) or the third light LI (near-infrared light), the first light LG (green light) can only travel a shorter distance within the biological body. Therefore, the first light LG (green light) will not reach the position of the second light-receiving section 112, and thus, even without a bandpass filter layer, the first light LG (green light) will not be incident on the second photoelectric conversion section 33. Therefore, the second light-receiving section 112 can omit the bandpass filter layer, thereby achieving cost reduction.

[0084] In this embodiment, the light-emitting portion 12 is shaped to surround the light-receiving portion 11, and within the light-receiving portion 11, the first light-receiving portion 111 surrounds the second light-receiving portion 112. Therefore, in the semiconductor substrate 20, the first photoelectric conversion portion 31 is formed to surround the second photoelectric conversion portion 33. As described above, the first light LG (green light) is emitted after traveling a short distance within the biological body, and therefore cannot reach distant locations, resulting in a relatively small amount of light that can be received. Therefore, by configuring the light-emitting portion 12 to surround the light-receiving portion 11 throughout its circumference, the amount of light directed toward the light-receiving portion 11 can be increased. Furthermore, by arranging the first photoelectric conversion portion 31 to surround the second photoelectric conversion portion 33 throughout its circumference, a structure is created where the entire area approaching the light-emitting portion 12 can receive the first light LG (green light). Therefore, the amount of first light LG (green light) received can be increased.

[0085] In this embodiment, the light-emitting section 12 does not have active components such as switching transistors arranged in a passive matrix manner for each light-emitting element, but has an organic EL element structure in a passive matrix manner. Therefore, the structure of the light-emitting section 12 is simple, and thus the manufacturing of the light-emitting section 12 is easy.

[0086] In the light-emitting unit 12 of this embodiment, a reflective layer 64 is provided in the wiring layer 61 at positions overlapping the first light-emitting layer 671, the second light-emitting layer 672, and the third light-emitting layer 673 from the semiconductor substrate 20 side. Therefore, in each light-emitting element, light in a predetermined wavelength range generated by the organic light-emitting layer 67 resonates between the reflective layer 64 and the second electrode 66 (cathode). As a result, the peak value of the wavelength distribution of the light extracted from each light-emitting element in the +Z direction becomes steeper, thus increasing the intensity of the light emitted from the light-emitting unit 12 (first light LG, second light LR, third light LI) and improving color purity.

[0087] The detection device 3 of this embodiment includes: a transparent cover plate 72 that covers the light-emitting portion 12 and the light-receiving portion 11 from the side opposite to the semiconductor substrate 20; and a transparent resin layer 71 formed between the light-emitting portion 12 and the light-receiving portion 11 and the cover plate 72. Thus, a protective layer protecting the light-receiving portion 11 and the light-emitting portion 12 can be formed. Furthermore, the cover plate 72 can form the detection surface 10.

[0088] <Modified Examples of Detection Devices>

[0089] (1) The light-emitting part 12 in the above embodiment is a structure that can emit light in three bands: first light LG (green light), second light LR (red light), and third light LI (near-infrared light). However, either the third light-emitting element 123 or the second light-emitting element 122 can be omitted from the light-emitting part 12.

[0090] (2) In the above embodiment, the first electrode 65 is a transparent electrode (ITO film), but the first electrode 65 can also be formed as a light-shielding electrode.

[0091] (3) In the above embodiment, the light-emitting part 12 is a structure in which each light-emitting element is driven in a passive matrix manner, but it can also be a structure in which each light-emitting element is driven in an active matrix manner. For example, a switching transistor can be formed in a layer of the semiconductor substrate 20 at a position that overlaps with each light-emitting element in the Z direction.

[0092] (4) The light-emitting part 12 may also be configured such that each light-emitting element has a color filter. Figure 5 This is a schematic cross-sectional view showing the cross-sectional structure of the light-receiving part 11 and the light-emitting part 12 when each light-emitting element has a color filter. (Example) Figure 5 As shown, the first light-emitting element 121 has a first color filter 681 that overlaps with the first light-emitting layer 671. The second light-emitting element 122 has a second color filter 682 that overlaps with the second light-emitting layer 672. The third light-emitting element 123 has a third color filter 683 that overlaps with the third light-emitting layer 673. The first color filter 681, the second color filter 682, and the third color filter 683 are formed on the surface of the sealing layer 63 in the +Z direction.

[0093] The first color filter 681 selectively allows light of the wavelength corresponding to the first light LG (green light) to pass through. The second color filter 682 selectively allows light of the wavelength corresponding to the second light LR (red light) to pass through. The third color filter 683 selectively allows light of the wavelength corresponding to the third light LI (near-infrared light) to pass through. By having the first color filter 681, the second color filter 682, and the third color filter 683, the color purity of the first light LG (green light), the second light LR (red light), and the third light LI (near-infrared light) emitted from the light-emitting unit 12 can be improved.

[0094] (5) Figure 5 As shown, when each light-emitting element has a structure with a color filter, the first light-emitting layer 671, the second light-emitting layer 672, and the third light-emitting layer 673 can all be formed of an organic material that emits white light.

[0095] (6) In the above embodiment, both the first light-receiving part 111 and the second light-receiving part 112 have an angle-limiting filter layer 35, but the angle-limiting filter layer 35 may be omitted from one or both of the first light-receiving part 111 and the second light-receiving part 112. For example, when the structure is formed such that external light can be blocked from the light-receiving part 11 and the light-emitting part 12, the angle-limiting filter layer 35 for reducing noise caused by external light can be omitted.

[0096] Figure 6 This is a schematic cross-sectional view showing the cross-sectional structure of the light-receiving part 11 and the light-emitting part 12 without the angle-limiting filter layer 35. Figure 6 In the structure shown, the first light-receiving part 111 has a first filter layer 32, which is composed only of a bandpass filter layer 37. The second light-receiving part 112 does not have a filter layer, and a transparent resin layer 71 is formed on the surface of the second photoelectric conversion part 33. The light-emitting part 12 has a wiring layer 61, but it is connected to... Figure 4 The structure shown simplifies the layer construction of wiring layer 61.

[0097] (7) In the above embodiment, the second filter layer 34 does not have a bandpass filter layer, but it may also be configured such that the first filter layer 32 and the second filter layer 34 each have a bandpass filter layer that allows light of different wavelengths to pass through. For example, a bandpass filter layer that selectively allows one or both of the second light LR (red light) and the third light LI (near-infrared light) to pass through can be provided in the second filter layer 34.

[0098] (8) In the above embodiments, the first light-emitting element 121, the second light-emitting element 122, and the third light-emitting element 123 are generally disposed within the thickness (height) range of the first filter layer 32 in the Z direction. However, they may also be configured as part of or entirely disposed outside the thickness (height) range of the first light-emitting element 121, the second light-emitting element 122, and the third light-emitting element 123 in the Z direction. For example, such as Figure 6 As shown, when the angle-limiting filter layer 35 is omitted and the thickness (height) of the bandpass filter layer 37 in the Z direction is reduced, a part or all of the organic EL element forming portion 62 constituting the first light-emitting element 121, the second light-emitting element 122 and the third light-emitting element 123 can be disposed at a position closer to the +Z direction than the first filter layer 32.

[0099] (9) Figure 7 This is a top view schematically showing the planar shapes of the light-receiving part 11 and the light-emitting part 12 in a modified example. (Example) Figure 7 As shown, the light-receiving part 11 and the light-emitting part 12 can adopt a circular planar shape instead of a rectangle.

Claims

1. A detection device, characterized in that, The detection device has: Semiconductor substrate; A light-emitting part, which is disposed on the semiconductor substrate, emits light toward the living organism; as well as A light-receiving portion, disposed on the semiconductor substrate, receives light from the organism. The light-receiving portion includes: a first photoelectric conversion portion that receives the light; and a first filter layer that limits the incident angle of the light incident on the first photoelectric conversion portion. The light-receiving part is positioned adjacent to the light-emitting part. The first filter layer is disposed on the surface of the first photoelectric conversion unit. The light-emitting portion has a first light-emitting element, and at least a portion of the first light-emitting element is disposed at the same position as the first filter layer in the normal direction of the semiconductor substrate. The first light-emitting element has: a first electrode; a second electrode that is transparent; and a first light-emitting layer that emits light and is disposed between the first electrode and the second electrode.

2. The detection device according to claim 1, characterized in that, The first electrode has light-shielding properties.

3. The detection device according to claim 1 or 2, characterized in that, Viewed from the normal direction, the detection device has a reflective layer at the position where it overlaps with the first light-emitting layer.

4. The detection device according to claim 1 or 2, characterized in that, The first filter layer has a bandpass filter layer that selectively allows wavelengths of light emitted from the first light-emitting element to pass through.

5. The detection device according to claim 4, characterized in that, The light-emitting part has a second light-emitting element, which emits a second light with a wavelength longer than the first light emitted by the first light-emitting element. The second light-emitting element is farther away from the light-receiving part than the first light-emitting element.

6. The detection device according to claim 5, characterized in that, The first light is green wavelength light. The bandpass filter layer selectively allows the first light to pass through. The second light is light in the red band or near-infrared band.

7. The detection device according to claim 5, characterized in that, The second light-emitting element has a second light-emitting layer. The first light-emitting element has a first color filter that overlaps with the first light-emitting layer. The second light-emitting element has a second color filter that overlaps with the second light-emitting layer.

8. The detection device according to claim 5, characterized in that, The light-receiving portion includes: a second photoelectric conversion portion formed within a layer of the semiconductor substrate; and a second filter layer formed on the surface of the second photoelectric conversion portion. The second photoelectric conversion unit is farther away from the light-emitting unit than the first photoelectric conversion unit.

9. The detection device according to claim 8, characterized in that, The first filter layer and the second filter layer each have an angle-limiting filter layer.

10. The detection device according to claim 8, characterized in that, Viewed from the normal direction, the light-emitting part is shaped to surround the light-receiving part. The first photoelectric conversion unit is shaped to surround the second photoelectric conversion unit.

11. The detection device according to claim 1 or 2, characterized in that, The detection device has: A transparent cover plate that covers the light-emitting portion and the light-receiving portion from the side opposite to the semiconductor substrate; and A transparent resin layer is formed between the light-emitting part and the light-receiving part and the cover plate.

12. A measuring device, characterized in that, The measuring device has: The detection device according to any one of claims 1 to 11; and The information analysis unit determines biological information based on the detection signal representing the detection result of the detection device.

Images