A semiconductor laser element with a two-dimensional phonon and a three-dimensional charge transport layer

Abstract

This invention relates to the field of semiconductor device technology, specifically to a semiconductor laser element with a two-dimensional phonon and three-dimensional charge transport layer. The semiconductor laser element has a two-dimensional phonon and three-dimensional charge transport layer between the active layer and the upper waveguide layer, and between the active layer and the lower waveguide layer. This layer is a two-dimensional moiré superlattice structure composed of one or more of SnSe, AgSbT2, SnTe, ZrNiSn, Bi2Te3, and NbFeSb. This layer promotes electronic hybridization, introduces local strain modulation of phonon vibrations, enhances atomic order, reduces phonon scattering, and simultaneously enhances phase transition-induced electron orbital overlap and two-dimensional phonon and three-dimensional charge transport. It also reduces the valence band order of the laser, enhances carrier localization, hole transport, and stimulated emission of the laser element, lowers the excitation threshold of the laser element, enhances bipolar conductivity, improves continuous oscillation below room temperature, enhances the confinement factor and peak gain, reduces the laser voltage, and improves the optical power and slope efficiency of the laser element.

Description

Technical Field

[0001] This invention relates to the technical field of semiconductor optoelectronic devices, and in particular to a semiconductor laser element having a two-dimensional phonon and a three-dimensional charge transport layer. Background Technology

[0002] Lasers are widely used in laser displays, laser TVs, laser projectors, communications, medical applications, weaponry, guidance, ranging, spectral analysis, cutting, precision welding, and high-density optical storage. There are many types of lasers, and they can be classified in various ways, mainly including solid-state, gas, liquid, semiconductor, and dye lasers. Compared with other types of lasers, all-solid-state semiconductor lasers have advantages such as small size, high efficiency, light weight, good stability, long lifespan, simple and compact structure, and miniaturization.

[0003] There are significant differences between lasers and nitride semiconductor light-emitting diodes (LEDs): 1) Lasers are generated by stimulated emission of charge carriers, have a small full width at half maximum (FW), and very high brightness; a single laser can have an output power in the W range. In contrast, nitride semiconductor LEDs emit spontaneous radiation, and the output power of a single LED is in the mW range; 2) Lasers can operate at current densities of up to kA / cm². 2 The efficiency of LEDs is more than two orders of magnitude higher than that of nitride LEDs, resulting in stronger electron leakage, more severe Auger recombination, stronger polarization effect, and more severe electron-hole mismatch, leading to more severe efficiency degradation and the Droop effect; 3) LEDs emit spontaneous transition radiation without external influence, producing incoherent light from high energy levels to low energy levels, while lasers emit stimulated transition radiation, where the energy of the induced photon must be equal to the energy difference of the electron transition, producing coherent light between the photon and the induced photon; 4) The principles are different: LEDs emit radiative recombination light under the action of external voltage, where electrons and holes transition to quantum wells or pn junctions, while lasers require lasing conditions to be met, which must satisfy the inversion distribution of charge carriers in the active region. The stimulated emission light oscillates back and forth in the resonant cavity, and the propagation in the gain medium amplifies the light, satisfying the threshold condition so that the gain is greater than the loss, and finally outputting laser light.

[0004] Nitride semiconductor lasers suffer from the following problems: 1) Large internal lattice mismatch and strain lead to strong polarization effects, and the strong Stark effect of quantum confinement in quantum control (QCSE) limits the improvement of laser lasing gain; 2) The Mg acceptor activation energy of p-type semiconductors is high and the ionization efficiency is low. The hole concentration is much lower than the electron concentration and the hole mobility is much lower than the electron mobility, resulting in severe electron-hole asymmetry mismatch in the quantum well, electron leakage and carrier delocalization, making hole transport in the quantum well more difficult, resulting in non-uniform carrier injection, non-uniform gain, broadened laser gain spectrum, and decreased peak gain; 3) The increased valence band difference makes hole transport in the quantum well more difficult, resulting in non-uniform carrier injection and gain; after laser lasing, the carrier concentration in the active region of multiple quantum wells becomes saturated, the bipolar conductivity effect weakens, the series resistance of the laser increases, leading to an increase in laser voltage. Summary of the Invention

[0005] One objective of this invention is to provide a semiconductor laser element having a two-dimensional phonon and a three-dimensional charge transport layer. The two-dimensional phonon and three-dimensional charge transport layer disposed in the semiconductor laser element can promote electronic hybridization, enhance the confinement factor and peak gain, reduce the voltage of the laser, and improve the optical power and slope efficiency of the laser element.

[0006] To achieve the above objectives, the present invention adopts the following technical solution: a semiconductor laser element having a two-dimensional phonon and a three-dimensional charge transport layer, comprising, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper confinement layer. A first two-dimensional phonon and three-dimensional charge transport layer is disposed between the lower waveguide layer and the active layer, and a second two-dimensional phonon and three-dimensional charge transport layer is disposed between the active layer and the upper waveguide layer. The first two-dimensional phonon and three-dimensional charge transport layer and the second two-dimensional phonon and three-dimensional charge transport layer are the same or different, and both are two-dimensional moiré superlattice structures formed by any one or more combinations of SnSe, AgSbT2, SnTe, ZrNiSn, Bi2Te3, and NbFeSb.

[0007] Further improvements to semiconductor laser devices with two-dimensional phonon and three-dimensional charge transport layers:

[0008] Preferably, the substrate is any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, and LiAlO2 / LiGaO2 composite substrate.

[0009] Preferably, the lower confining layer is any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, and AlInN, with a thickness of 50-5000 nm and a Si doping concentration of 1E18-1E20 cm⁻¹. -3 .

[0010] Preferably, the lower waveguide layer and the upper waveguide layer are any one or any combination of GaN, InGaN, and AlInGaN, with a thickness of 50-1000 nm and a Si doping concentration of 1E16-5E19 cm⁻¹. -3 .

[0011] Preferably, the active layer is a periodic structure composed of a well layer and a barrier layer, wherein the well layer is an InGaN well layer, and the barrier layer is any one or a combination of two or more of GaN, AlInGaN, AlGaN, and AlInN, and the number of periods of the active layer is m: 4 ≥ m ≥ 1.

[0012] Preferably, the electron blocking layer and the upper confinement layer are any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 20-1000 nm and a Mg doping concentration of 1E18-1E20 cm⁻¹. -3 .

[0013] Preferably, the thickness of the first two-dimensional phonon and the three-dimensional charge transport layer and the second two-dimensional phonon and the three-dimensional charge transport layer are both 5-500 nm.

[0014] Preferably, the first two-dimensional phonon and three-dimensional charge transport layer and the second two-dimensional phonon and three-dimensional charge transport layer are two-dimensional moiré superlattice structures formed by the following binary combinations: SnSe / AgSbT2, SnSe / SnTe, SnSe / ZrNiSn, SnSe / Bi2Te3, SnSe / NbFeSb, AgSbT2 / SnTe, AgSbT2 / ZrNiSn, AgSbT2 / Bi2Te3, AgSbT2 / NbFeSb, SnTe / ZrNiSn, SnTe / Bi2Te3, SnTe / NbFeSb, ZrNiSn / Bi2Te3, ZrNiSn / NbFeSb, Bi2Te3 / NbFeSb.

[0015] Preferably, the first two-dimensional phonon and three-dimensional charge transport layer and the second two-dimensional phonon and three-dimensional charge transport layer are two-dimensional moiré superlattice structures formed by the following ternary combinations: SnSe / AgSbT2 / SnTe, SnSe / AgSbT2 / ZrNiSn, SnSe / AgSbT2 / Bi2Te3, SnSe / AgSbT2 / NbFeSb, SnSe / SnTe / ZrNiSn, SnSe / SnTe / Bi2Te3, SnSe / SnTe / NbFeSb, SnSe / ZrNiSn / Bi2Te3, SnSe / ZrNiSn / NbFeSb ,SnSe / Bi2Te3 / NbFeSb,AgSbT2 / SnTe / ZrNiSn,AgSbT2 / SnTe / Bi2Te3,AgSbT2 / SnTe / NbFeSb,AgSbT2 / ZrNiSn / Bi2Te3,AgSbT2 / ZrNi Sn / NbFeSb, AgSbT2 / Bi2Te3 / NbFeSb, SnTe / ZrNiSn / Bi2Te3, SnTe / ZrNiSn / NbFeSb, SnTe / Bi2Te3 / NbFeSb, ZrNiSn / Bi2Te3 / NbFeSb.

[0016] Preferably, the first two-dimensional phonon and three-dimensional charge transport layer and the second two-dimensional phonon and three-dimensional charge transport layer are two-dimensional moiré superlattice structures formed by the following quaternary, pentagonal, or hexaternary combinations: SnSe / AgSbT2 / SnTe / ZrNiSn, SnSe / AgSbT2 / SnTe / Bi2Te3, SnSe / AgSbT2 / SnTe / NbFeSb, SnSe / SnTe / ZrNiSn / Bi2Te3, SnSe / SnTe / ZrNiSn / NbFeSb, SnSe / ZrNiSn / Bi2Te3 / NbFeSb, AgSbT2 / SnTe / ZrNiSn / Bi2Te3, AgSbT2 / SnTe / ZrNiSn / NbFeSb, AgSbT2 / ZrNi Sn / Bi2Te3 / NbFeSb, SnTe / ZrNiSn / Bi2Te3 / NbFeSb, SnSe / AgSbT2 / SnTe / ZrNiSn / Bi2Te3, SnSe / AgSbT2 / SnTe / ZrNiSn / NbFeSb, SnSe / AgSbT2 / SnTe / Bi2Te3 / NbFeSb ,SnSe / AgSbT2 / ZrNiSn / Bi2Te3 / NbFeSb,SnSe / SnTe / ZrNiSn / Bi2Te3 / NbFeSb,AgS bT2 / SnTe / ZrNiSn / Bi2Te3 / NbFeSb, SnSe / AgSbT2 / SnTe / ZrNiSn / Bi2Te3 / NbFeSb.

[0017] The advantages of this invention compared to the prior art are as follows:

[0018] This invention provides a semiconductor laser element with a two-dimensional phonon and a three-dimensional charge transport layer. First, the two-dimensional phonon and three-dimensional charge transport layer promotes electron hybridization, introduces localized strain modulation of phonon vibrations, enhances atomic order, and improves phonon scattering. Second, the two-dimensional phonon and three-dimensional charge transport layer enhances phase transition-induced electron orbital overlap, strengthens two-dimensional phonon and three-dimensional charge transport, reduces the valence band order of the laser, enhances carrier localization and hole transport, and strengthens stimulated emission of the laser element. These two effects work together to lower the excitation threshold of the laser element, enhance bipolar conductivity, improve continuous oscillation at room temperature, enhance the confinement factor and peak gain, reduce the laser voltage, and improve the optical power and slope efficiency of the laser element. Attached Figure Description

[0019] Figure 1 This is a schematic diagram of the structure of a semiconductor laser element with a two-dimensional phonon and a three-dimensional charge transport layer according to an embodiment of the present invention;

[0020] The meanings of the markings in the attached diagram are as follows:

[0021] 100. Substrate; 101. Lower confinement layer; 102. Lower waveguide layer; 103. Active layer; 104. Upper waveguide layer; 105. Electron blocking layer; 106. Upper confinement layer; 1071. First two-dimensional phonon and three-dimensional charge transport layer; 1072. Second two-dimensional phonon and three-dimensional charge transport layer. Detailed Implementation

[0022] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without creative effort are within the scope of protection of this invention.

[0023] Comparative Example 1

[0024] This comparative example provides a conventional laser element, which, from bottom to top, includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106; specifically:

[0025] The substrate 100 is a GaN substrate;

[0026] The lower confinement layer 101 is AlGaN with a thickness of 100 nm and a Si doping concentration of 1E18 cm⁻¹. -3 ;

[0027] The lower waveguide layer 102 is GaN with a thickness of 100 nm and a Si doping concentration of 1E18 cm⁻¹. -3 ;

[0028] The active layer 103 is a periodic structure composed of a well layer and a barrier layer. The well layer is an InGaN well layer, the barrier layer is GaN, and the number of periods m is 3.

[0029] The upper waveguide layer 104 is InGaN with a thickness of 100 nm and a Si doping concentration of 1E18 cm⁻¹. -3 ;

[0030] The electron blocking layer 105 is AlGaN, with a thickness of 100 nm and a Mg doping concentration of 1E19 cm⁻¹. -3 .

[0031] The upper confinement layer 106 is AlInGaN with a thickness of 100 nm and a Mg doping concentration of 1E19 cm⁻¹. -3 .

[0032] Example 1

[0033] This embodiment provides a semiconductor laser element 1 having a two-dimensional phonon layer and a three-dimensional charge transport layer, as shown in the following structure. Figure 1 As shown, the specific structure is the same as that in Comparative Example 1, except that:

[0034] A first two-dimensional phonon and three-dimensional charge transport layer 1071 is disposed between the lower waveguide layer 102 and the active layer 103. The first two-dimensional phonon and three-dimensional charge transport layer 1071 is a two-dimensional moiré superlattice structure composed of SnTe / Bi2Te3 / NbFeSb ternary combination, with a thickness of 50nm.

[0035] A second two-dimensional phonon and three-dimensional charge transport layer 1072 is disposed between the active layer 103 and the upper waveguide layer 104; the second two-dimensional phonon and three-dimensional charge transport layer 1072 is a two-dimensional moiré superlattice structure of SnSe / AgSbT2 binary combination with a thickness of 100nm.

[0036] Example 2

[0037] This embodiment provides a semiconductor laser element 2 with a two-dimensional phonon and a three-dimensional charge transport layer, as shown in the following structure. Figure 1 As shown, the structure, from bottom to top, includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, a first two-dimensional phonon and three-dimensional charge transport layer 1071, an active layer 103, a second two-dimensional phonon and three-dimensional charge transport layer 1072, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106; specifically:

[0038] The substrate 100 is a sapphire / SiO2 composite substrate;

[0039] The lower confinement layer 101 is a GaN / InGaN layer with a thickness of 50 nm and a Si doping concentration of 1E18 cm⁻¹. -3 ;

[0040] The lower waveguide layer 102 is an InGaN layer with a thickness of 50 nm and a Si doping concentration of 1E16 cm⁻¹. -3 ;

[0041] The first two-dimensional phonon and three-dimensional charge transport layer 1071 is a two-dimensional moiré superlattice structure composed of SnTe / ZrNiSn / Bi2Te3 ternary combination, with a thickness of 100nm;

[0042] The active layer 103 is a periodic structure composed of a well layer and a barrier layer. The well layer is an InGaN well layer, and the barrier layer is an AlInN layer. The number of periods m satisfies that m is 3.

[0043] The second two-dimensional phonon and three-dimensional charge transport layer 1072 is a two-dimensional moiré superlattice structure composed of AgSbT2 / ZrNiSn / Bi2Te3 ternary combination, with a thickness of 200nm;

[0044] The upper waveguide layer 104 is a combination of AlInGaN and InGaN, with a thickness of 1000 nm and a Si doping concentration of 1E17 cm⁻¹. -3 ;

[0045] The electron blocking layer 105 is a combination of GaN and AlGaN, with a thickness of 20 nm and a Mg doping concentration of 1E18 cm⁻¹. -3 ;

[0046] The upper confinement layer 106 is a combination of AlInGaN and AlN, with a thickness of 20 nm and a Mg doping concentration of 1E18 cm⁻¹. -3 .

[0047] Example 3

[0048] This embodiment provides a semiconductor laser element 3 having a two-dimensional phonon layer and a three-dimensional charge transport layer, as shown in the following structure. Figure 1 As shown, the structure, from bottom to top, includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, a first two-dimensional phonon and three-dimensional charge transport layer 1071, an active layer 103, a second two-dimensional phonon and three-dimensional charge transport layer 1072, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106; specifically:

[0049] The substrate 100 is a GaAs substrate;

[0050] The lower confinement layer 101 is a combination of InN and AlInN, with a thickness of 5000 nm and a Si doping concentration of 1E20 cm⁻¹. -3 ;

[0051] The lower waveguide layer 102 is a combination of InGaN and AlInGaN, with a thickness of 1000 nm and a Si doping concentration of 1E19 cm⁻¹. -3 ;

[0052] The first two-dimensional phonon and three-dimensional charge transport layer 1071 is a two-dimensional moiré superlattice structure composed of SnSe / AgSbT2 binary combination, with a thickness of 100nm;

[0053] The active layer 103 is a periodic structure composed of a well layer and a barrier layer. The well layer is an InGaN well layer, and the barrier layer is a combination of AlGaN and AlInN. The number of periods m satisfies that m is 4.

[0054] The second two-dimensional phonon and three-dimensional charge transport layer 1072 is a two-dimensional moiré superlattice structure composed of five elements: SnSe / AgSbT2 / SnTe / ZrNiSn / NbFeSb, with a thickness of 350 nm.

[0055] The upper waveguide layer 104 is a combination of InGaN and AlInGaN, with a thickness of 50 nm and a Si doping concentration of 1E18 cm⁻¹. -3 ;

[0056] The electron blocking layer 105 is a combination of GaN, AlN, and AlInGaN, with a thickness of 1000 nm and a Mg doping concentration of 1E18 cm⁻¹. -3 ;

[0057] The upper confinement layer 106 is a combination of AlN and AlInN, with a thickness of 1000 nm and a Mg doping concentration of 1E19 cm⁻¹. -3 .

[0058] Example 4

[0059] This embodiment provides a semiconductor laser element 4 with a two-dimensional phonon and a three-dimensional charge transport layer, as shown in the following structure. Figure 1 As shown, the structure, from bottom to top, includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, a first two-dimensional phonon and three-dimensional charge transport layer 1071, an active layer 103, a second two-dimensional phonon and three-dimensional charge transport layer 1072, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106; specifically:

[0060] The substrate 100 is a sapphire substrate;

[0061] The lower confinement layer 101 is a combination of AlInGaN, AlN, and InN, with a thickness of 100 nm and a Si doping concentration of 1E19 cm⁻¹. -3 ;

[0062] The lower waveguide layer 102 is made of AlInGaN, with a thickness of 500 nm and a Si doping concentration of 1E17 cm⁻¹. -3 ;

[0063] The first two-dimensional phonon and the three-dimensional charge transport layer 1071 and the second two-dimensional phonon and the three-dimensional charge transport layer 1072 are the same, both being two-dimensional moiré superlattice structures composed of AgSbT2 / SnTe / ZrNiSn / NbFeSb quaternary combination, and both having a thickness of 400nm.

[0064] The active layer 103 is a periodic structure composed of a well layer and a barrier layer. The well layer is an InGaN well layer, and the barrier layer is a combination of GaN, AlInGaN, and AlGaN. The number of periods m is 1.

[0065] The upper waveguide layer 104 is a combination of InGaN and AlInGaN, with a thickness of 100 nm and a Si doping concentration of 1E17 cm⁻¹. -3 ;

[0066] The electron blocking layer 105 is a combination of AlInGaN, AlN, and AlInN, with a thickness of 100 nm and a Mg doping concentration of 1E18 cm⁻¹. -3 ;

[0067] The upper confinement layer 106 is a combination of AlInGaN, AlN, and AlInN, with a thickness of 100 nm and a Mg doping concentration of 1E19 cm⁻¹. -3 .

[0068] Example 5

[0069] This embodiment provides a semiconductor laser element 5 with a two-dimensional phonon layer and a three-dimensional charge transport layer, as shown in the following structure. Figure 1 As shown, the structure, from bottom to top, includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, a first two-dimensional phonon and three-dimensional charge transport layer 1071, an active layer 103, a second two-dimensional phonon and three-dimensional charge transport layer 1072, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106; specifically:

[0070] The substrate 100 is a GaN substrate;

[0071] The lower confinement layer 101 is a combination of InGaN and AlInN, with a thickness of 300 nm and a Si doping concentration of 1E19 cm⁻¹. -3 ;

[0072] The lower waveguide layer 102 is a combination of GaN and AlInGaN, with a thickness of 300 nm and a Si doping concentration of 1E18 cm⁻¹. -3 ;

[0073] The first two-dimensional phonon and three-dimensional charge transport layer 1071 is a two-dimensional moiré superlattice structure composed of SnSe / SnTe / NbFeSb ternary combination, with a thickness of 100nm;

[0074] The active layer 103 is a periodic structure composed of a well layer and a barrier layer. The well layer is an InGaN well layer, and the barrier layer is a combination of GaN and AlInN. The number of periods m is 3.

[0075] The second two-dimensional phonon and three-dimensional charge transport layer 1072 is a core-shell structure and heterojunction structure of a six-element combination of SnSe / AgSbT2 / SnTe / ZrNiSn / Bi2Te3 / NbFeSb, with a thickness of 300nm;

[0076] The upper waveguide layer 104 is a combination of InGaN and AlInGaN, with a thickness of 500 nm and a Si doping concentration of 1E17 cm⁻¹. -3 ;

[0077] The electron blocking layer 105 is a combination of AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 500 nm and a Mg doping concentration of 1E18 cm⁻¹. -3 ;

[0078] The upper confinement layer 106 is a combination of GaN, AlGaN, and AlN, with a thickness of 500 nm and a Mg doping concentration of 1E19 cm⁻¹. -3 ;

[0079] The performance of the semiconductor laser elements in the comparative examples above, and the semiconductor laser elements with two-dimensional phonon and three-dimensional charge transport layers in Examples 1-5, were tested, and the results are shown in Table 1 below:

[0080] Table 1. Performance test data of semiconductor laser elements in comparative examples and Examples 1-5.

[0081] Green Laser - Project Slope efficiency (W / A) <![CDATA[Threshold current density (kA / cm 2 )]]> Optical power (W) Threshold voltage (V) Traditional laser components 0.32 4.7 0.40 7.7 Semiconductor laser element 1 0.48 2.2 0.69 5.7 Semiconductor laser element 2 0.49 2.4 0.66 5.5 Semiconductor laser element 3 0.49 2.1 0.68 5.8 Semiconductor laser element 4 0.50 2.3 0.65 5.4 Semiconductor laser element 5 0.48 2.5 0.67 5.0

[0082] As shown in Table 1 above, compared with traditional laser elements, the semiconductor laser element with a two-dimensional phonon and three-dimensional charge transport layer of this invention achieves a slant efficiency increase of over 50%, a threshold current density decrease of over 50%, an optical power increase of over 50%, and a threshold voltage decrease of over 20%. This is because the two-dimensional phonon and three-dimensional charge transport layer of the semiconductor laser element of this invention promotes electron hybridization, introduces local strain modulation of phonon vibrations, enhances atomic order, improves phonon scattering, and simultaneously enhances phase transition-induced electron orbital overlap, enhances two-dimensional phonon and three-dimensional charge transport, reduces the valence band order of the laser, enhances carrier localization and hole transport, enhances stimulated emission of the laser element, thereby reducing the excitation threshold of the laser element, enhancing bipolar conductivity, improving continuous oscillation at room temperature, enhancing the confinement factor and peak gain, reducing the laser voltage, and improving the optical power and slant efficiency of the laser element.

[0083] Those skilled in the art should understand that the above descriptions are merely several specific embodiments of the present invention, and not all embodiments. It should be noted that many modifications and improvements can be made by those skilled in the art, and all modifications or improvements not exceeding the scope of the claims should be considered within the protection scope of the present invention.

Claims

1. A semiconductor laser device having a two-dimensional phonon and a three-dimensional charge transport layer, comprising, from bottom to top, a substrate (100), a lower confinement layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104), an electron blocking layer (105), and an upper confinement layer (106), characterized in that, A first two-dimensional phonon and three-dimensional charge transport layer (1071) is disposed between the lower waveguide layer (102) and the active layer (103), and a second two-dimensional phonon and three-dimensional charge transport layer (1072) is disposed between the active layer (103) and the upper waveguide layer (104). The first two-dimensional phonon and three-dimensional charge transport layer (1071) and the second two-dimensional phonon and three-dimensional charge transport layer (1072) are the same or different, and are both two-dimensional moiré superlattice structures formed by any one or more combinations of SnSe, AgSbT2, SnTe, ZrNiSn, Bi2Te3, and NbFeSb.

2. A semiconductor laser element having a two-dimensional phonon and a three-dimensional charge transport layer according to claim 1, characterized in that, The substrate (100) is any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, and LiAlO2 / LiGaO2 composite substrate.

3. A semiconductor laser element having a two-dimensional phonon and a three-dimensional charge transport layer according to claim 1, characterized in that, The lower confinement layer (101) is any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, and AlInN, with a thickness of 50-5000 nm and a Si doping concentration of 1E18-1E20 cm⁻¹. -3 .

4. A semiconductor laser element having a two-dimensional phonon and a three-dimensional charge transport layer according to claim 1, characterized in that, The lower waveguide layer (102) and the upper waveguide layer (104) are any one or any combination of GaN, InGaN, and AlInGaN, with a thickness of 50-1000 nm and a Si doping concentration of 1E16-5E19 cm⁻¹. -3 .

5. A semiconductor laser element having a two-dimensional phonon and a three-dimensional charge transport layer according to claim 1, characterized in that, The active layer (103) is a periodic structure composed of a well layer and a barrier layer. The well layer is an InGaN well layer, and the barrier layer is any one or a combination of two or more of GaN, AlInGaN, AlGaN, and AlInN. The number of periods of the active layer is m: 4 ≥ m ≥ 1.

6. A semiconductor laser element having a two-dimensional phonon and a three-dimensional charge transport layer according to claim 1, characterized in that, The electron blocking layer (105) and the upper confinement layer (106) are any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 20-1000 nm and a Mg doping concentration of 1E18-1E20 cm⁻¹. -3 .

7. A semiconductor laser element having a two-dimensional phonon and a three-dimensional charge transport layer according to claim 1, characterized in that, The thickness of the first two-dimensional phonon and three-dimensional charge transport layer (1071) and the second two-dimensional phonon and three-dimensional charge transport layer (1072) is 5-500 nm.

8. A semiconductor laser element having a two-dimensional phonon and a three-dimensional charge transport layer as described in claim 1 or 7, characterized in that, The first two-dimensional phonon and three-dimensional charge transport layer (1071) and the second two-dimensional phonon and three-dimensional charge transport layer (1072) are two-dimensional moiré superlattice structures formed by the following binary combinations: SnSe / AgSbT2, SnSe / SnTe, SnSe / ZrNiSn, SnSe / Bi2Te3, SnSe / NbFeSb, AgSbT2 / SnTe, AgSbT2 / ZrNiSn, AgSbT2 / Bi2Te3, AgSbT2 / NbFeSb, SnTe / ZrNiSn, SnTe / Bi2Te3, SnTe / NbFeSb, ZrNiSn / Bi2Te3, ZrNiSn / NbFeSb, Bi2Te3 / NbFeSb.

9. A semiconductor laser element having a two-dimensional phonon and a three-dimensional charge transport layer as described in claim 1 or 7, characterized in that, The first two-dimensional phonon and three-dimensional charge transport layer (1071) and the second two-dimensional phonon and three-dimensional charge transport layer (1072) are two-dimensional moiré superlattice structures formed by the following ternary combinations: SnSe / AgSbT2 / SnTe, SnSe / AgSbT2 / ZrNiSn, SnSe / AgSbT2 / Bi2Te3, SnSe / AgSbT2 / NbFeSb, SnSe / SnTe / ZrNiSn, SnSe / SnTe / Bi2Te3, SnSe / SnTe / NbFeSb, SnSe / ZrNiSn / Bi2Te3, SnSe / ZrNiSn / Nb FeSb, SnSe / Bi2Te3 / NbFeSb, AgSbT2 / SnTe / ZrNiSn, AgSbT2 / SnTe / Bi2Te3, AgSbT2 / SnTe / NbFeSb, AgSbT2 / ZrNiSn / Bi2Te3, AgSbT2 / Zr NiSn / NbFeSb, AgSbT2 / Bi2Te3 / NbFeSb, SnTe / ZrNiSn / Bi2Te3, SnTe / ZrNiSn / NbFeSb, SnTe / Bi2Te3 / NbFeSb, ZrNiSn / Bi2Te3 / NbFeSb.

10. A semiconductor laser element having a two-dimensional phonon and a three-dimensional charge transport layer as described in claim 1 or 7, characterized in that, The first two-dimensional phonon and three-dimensional charge transport layer (1071) and the second two-dimensional phonon and three-dimensional charge transport layer (1072) are two-dimensional moiré superlattice structures formed by the following quaternary, pentagonal, or hexaternary combinations: SnSe / AgSbT2 / SnTe / ZrNiSn, SnSe / AgSbT2 / SnTe / Bi2Te3, SnSe / AgSbT2 / SnTe / NbFeSb, SnSe / SnTe / ZrNiSn / Bi2Te3, SnSe / SnTe / ZrNiSn / NbFeSb, SnSe / ZrNiSn / Bi2Te3 / NbFeSb, AgSbT2 / SnTe / ZrNiSn / Bi2Te3, AgSbT2 / SnTe / ZrNiSn / NbFeSb, AgSbT2 / ZrNiSn / Bi2Te3 / NbFeSb, SnTe / ZrNiSn / Bi2Te3 / NbFeSb, SnSe / AgSbT2 / SnTe / ZrNi Sn / Bi2Te3, SnSe / AgSbT2 / SnTe / ZrNiSn / NbFeSb, SnSe / AgSbT2 / SnTe / Bi2Te3 / NbFe Sb, SnSe / AgSbT2 / ZrNiSn / Bi2Te3 / NbFeSb, SnSe / SnTe / ZrNiSn / Bi2Te3 / NbFeSb, Ag SbT2 / SnTe / ZrNiSn / Bi2Te3 / NbFeSb, SnSe / AgSbT2 / SnTe / ZrNiSn / Bi2Te3 / NbFeSb.

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