Radiation resistant high temperature high pressure thermal flow sensor and method of making

Abstract

The application discloses a kind of high-temperature high-pressure thermal flow sensor of radiation resistance and preparation method thereof, and relates to the technical field of sensor.The purpose of the present application is to solve the problems of low precision, large error, complex process preparation, high cost and long production cycle in the preparation process of traditional thermal flow sensor.The present application is based on ceramic co-firing process technology, and the main process includes punching process, screen printing process, laminating process, cutting process and glue sintering process, etc.The preparation of flow sensor of different flow rates is realized through electrode material system, structure design and debugging calibration.The manufacturing method of the present application can reduce temperature gradient and improve heat exchange efficiency, improve precision and service life, and meet the specific environmental requirements of high temperature, high pressure and radiation.The present application can obtain a kind of high-temperature high-pressure thermal flow sensor of radiation resistance and preparation method thereof.

Description

Technical Field

[0001] This invention relates to the field of sensor technology, specifically to the structural design and manufacturing method of a flow sensor for measuring the flow rate of nuclear reactor cooling water. Background Technology

[0002] The primary coolant flow rate is one of the crucial safety parameters for the normal operation of a nuclear power plant. This is because the heat generated in the reactor core must be dissipated by the coolant in the primary loop. Under constant temperature and pressure, the coolant flow rate reflects the reactor's output power. If the coolant flow rate is below 90% of its rated value, the reactor's emergency shutdown protection system will activate, shutting down the reactor. Conversely, if the flow rate is too high, it can cause vibrations in the reactor pressure vessel and other internal components, creating safety hazards. For these reasons, it is essential to measure the reactor coolant flow rate to ensure it exceeds the thermal design requirements but is less than the maximum allowable flow rate in the mechanical design. Therefore, accurate measurement of the primary coolant flow rate is of paramount importance for the safety and operational reliability of a nuclear power plant.

[0003] Because the primary coolant loop of a nuclear reactor is located in the reactor core, it is in an extreme environment of high temperature, high pressure and radiation. China does not yet have the means to monitor the flow rate under such conditions. At present, China mainly uses indirect measurement methods to control the coolant flow rate by measuring the core temperature with temperature sensors. This method cannot accurately and timely reflect the heat exchange efficiency and is difficult to meet the requirement of timely early warning of the decline in core heat exchange efficiency.

[0004] Thermal flow sensors can be used for the measurement and control of liquid flow. These sensors offer advantages such as low power consumption, large measurement range, high integration, and simple structure. However, their application in flow measurement under high temperature, high pressure, and radiation environments is still relatively uncommon. Summary of the Invention

[0005] The purpose of this invention is to address the problems of low accuracy, large error, complex manufacturing process, high cost, and long production cycle in the traditional thermal flow sensor manufacturing process. It aims to provide a manufacturing process for a thermal flow sensor that reduces temperature gradient and improves heat exchange efficiency, increases accuracy and service life, meets the specific environmental requirements of high temperature, high pressure, and irradiation, and exhibits high sensitivity, good stability, and corrosion resistance. Specifically, this invention provides an irradiation-resistant, high-temperature, and high-pressure thermal flow sensor and its manufacturing method.

[0006] A radiation-resistant, high-temperature, and high-pressure thermal flow sensor comprises a ceramic substrate 1, an electrode array, electrode leads, and a protective insulating layer. The ceramic substrate 1 is composed of first, second, third, and fourth ceramic green ceramic strips stacked sequentially. The electrode array comprises a temperature-sensing electrode a 2Z-1, a heating electrode a 3Z-1, a temperature-sensing electrode b 2F-1, and a heating electrode b 3F-1. The electrode leads comprise a temperature-sensing electrode lead a 2Z-1a, a heating electrode lead a 3Z-1a, a temperature-sensing electrode lead b 2F-1a, and a heating electrode lead b 3F-1a. The protective insulating layer comprises an insulating protective layer a 2 and an insulating protective layer b 3.

[0007] The ceramic substrate 1 is provided with window structure a 1-7 and window structure b 1-8. An electrode via a 1-1 is provided next to the window structure a 1-7, and an electrode via b 1-2 is provided next to the window structure b 1-8. Lead-out vias a 1-3, b 1-4, c 1-5 and d 1-6 are respectively provided on one side surface of the ceramic substrate 1.

[0008] The upper surface of the ceramic substrate 1 is provided with a temperature sensing electrode a 2Z-1, a temperature sensing electrode lead a 2Z-1a, a heating electrode a 3Z-1, and a heating electrode lead a 3Z-1a. The temperature sensing electrode a 2Z-1 is provided with a temperature sensing electrode a through hole 2Z-2, and the temperature sensing electrode lead a 2Z-1a is provided with a temperature sensing electrode lead a through hole 2Z-1b. The temperature sensing electrode a 2Z-1 is electrically connected to the temperature sensing electrode lead a 2Z-1a. The heating electrode a 3Z-1 is provided with a heating electrode a through hole 3Z-2, and the heating electrode lead a 3Z-1a is provided with a heating electrode lead a through hole 3Z-1b. The heating electrode a 3Z-1 is electrically connected to the heating electrode lead a 3Z-1a.

[0009] The lower surface of the ceramic substrate 1 is provided with a temperature sensing electrode b 2F-1, a temperature sensing electrode lead b 2F-1a, a heating electrode b 3F-1, and a heating electrode lead b 3F-1a. The temperature sensing electrode b 2F-1 is provided with a temperature sensing electrode b through hole 2F-2, and the temperature sensing electrode lead b 2F-1a is provided with a temperature sensing electrode lead b through hole 2F-1b. The temperature sensing electrode b 2F-1 and the temperature sensing electrode lead b 2F-1a are electrically connected. The heating electrode b 3F-1 is provided with a heating electrode b through hole 3F-2, and the heating electrode lead b 3F-1a is provided with a heating electrode lead b through hole 3F-1b. The heating electrode b 3F-1 and the heating electrode lead b 3F-1a are electrically connected.

[0010] The center lines of the vias 2Z-2 and 1-1 of the temperature sensing electrode a and 2F-2 of the temperature sensing electrode b coincide; the center lines of the vias 3Z-2 and 1-2 of the heating electrode a and 3F-2 of the heating electrode b coincide; the center lines of the vias 2Z-1b of the temperature sensing electrode lead a and 1-3 of the lead-out via coincide; the center lines of the vias 3Z-1b of the heating electrode lead a and 1-5 of the lead-out via coincide; the center lines of the vias 1-4 and 2F-1b of the temperature sensing electrode lead b coincide; and the center lines of the vias 1-6 and 3F-1b of the heating electrode lead b coincide.

[0011] An insulating protective layer a2 is provided on the upper surface of the temperature sensing electrode a2Z-1, the temperature sensing electrode lead a2Z-1a, the heating electrode a3Z-1, and the heating electrode lead a3Z-1a, and an insulating protective layer b3 is provided on the lower surface of the temperature sensing electrode b2F-1, the temperature sensing electrode lead b2F-1a, the heating electrode b3F-1, and the heating electrode lead b3F-1a.

[0012] A method for fabricating a radiation-resistant, high-temperature, and high-pressure thermal flow sensor comprises the following steps:

[0013] Step 1: Stack the first, second, third, and fourth ceramic green ceramic strips sequentially, wrap them with a silicone mold, vacuum seal them, and then place them in a warm water isostatic press. Laminate them for 2-3 hours at 70-85℃ and 6400-7200psi, then sinter them at 1000-1200℃ to obtain ceramic substrate 1. Using a punching technique, create arrayed window structures a1-7 and b1-8 on the ceramic substrate 1. Electrode vias a1-1 and b1-2 are then created next to window structures a1-7 and b1-8, respectively. Lead-out vias a1-3, b1-4, c1-5, and d1-6 are also provided on one side surface of the ceramic substrate 1. Finally, electrode vias a1-1, b1-2, and c1-6 are also created. 1-3, via b; 1-4, via c; 1-5, and via d; 1-6 are filled with metal paste.

[0014] Step 2: Prepare a temperature sensing electrode a 2Z-1, a temperature sensing electrode lead a 2Z-1a, a heating electrode a 3Z-1, and a heating electrode lead a 3Z-1a on the upper surface of the ceramic substrate 1. Create a temperature sensing electrode a through-hole 2Z-2 on the temperature sensing electrode a 2Z-1, a temperature sensing electrode lead a through-hole 2Z-1b on the temperature sensing electrode lead a 2Z-1a, a heating electrode a through-hole 3Z-2 on the heating electrode a 3Z-1, and a heating electrode lead a through-hole 3Z-1b on the heating electrode lead a 3Z-1a. Electrically connect the temperature sensing electrode a 2Z-1 to the temperature sensing electrode lead a 2Z-1a and the heating electrode a 3Z-1 to the heating electrode lead a 3Z-1a.

[0015] Simultaneously, a temperature-sensing electrode b2F-1, a temperature-sensing electrode lead b2F-1a, a heating electrode b3F-1, and a heating electrode lead b3F-1a are fabricated on the lower surface of a ceramic substrate 1 using screen printing. A temperature-sensing electrode through-hole 2F-2 is formed on the temperature-sensing electrode b2F-1, a temperature-sensing electrode lead b through-hole 2F-1b is formed on the temperature-sensing electrode lead b2F-1a, a heating electrode through-hole 3F-2 is formed on the heating electrode b3F-1, and a heating electrode lead b through-hole 3F-1b is formed on the heating electrode lead b3F-1a. The temperature-sensing electrode b2F-1 and the temperature-sensing electrode lead b2F-1a are electrically connected, as are the heating electrode b3F-1 and the heating electrode lead b3F-1a. Furthermore, the temperature-sensing electrode through-hole 2F-2 and the electrode through-hole a are also electrically connected. 1-1 coincides with the center line of the center of the through hole 2F-2 of the temperature sensing electrode b; 1-2 of the heating electrode a and through hole 3Z-2 coincide with the center line of the center of the center of the through hole 3F-2 of the heating electrode b; 2Z-1b of the temperature sensing electrode lead a coincides with the center line of the center of the center of the through hole a 1-3; 3Z-1b of the heating electrode lead a coincides with the center line of the center of the center of the center of the through hole c 1-5; 1-4 of the through hole b coincides with the center line of the center of the center of the through hole 2F-1b of the temperature sensing electrode lead b; 1-6 of the through hole d coincides with the center line of the center of the center of the through hole 3F-1b of the heating electrode lead b.

[0016] Step 3: An insulating protective layer a2 is prepared on the upper surface of the temperature sensing electrode a2Z-1, temperature sensing electrode lead a2Z-1a, heating electrode a3Z-1, and heating electrode lead a3Z-1a using a screen printing method. Simultaneously, an insulating protective layer b3 is prepared on the lower surface of the temperature sensing electrode b2F-1, temperature sensing electrode lead b2F-1a, heating electrode b3F-1, and heating electrode lead b3F-1a. Finally, the layers are sintered and fixed at a temperature of 750–800℃ to obtain a radiation-resistant high-temperature and high-pressure thermal flow sensor.

[0017] The principle of this invention:

[0018] This invention proposes a method for fabricating flow sensor electrodes based on high-temperature ceramic co-sintering (HTCC) technology. Conventional platinum electrodes are typically fabricated using machining and semiconductor processes. Machining methods, due to limitations in processing technology and operator skill, cannot achieve high precision and suffer from significant random processing errors, hindering sensor debugging and calibration. Semiconductor processes are complex, requiring multiple photolithography, development, and etching steps, resulting in high costs and long production cycles, with electrode film thicknesses generally below 1 μm. Platinum films fabricated using HTCC technology can reach 10 μm to 15 μm, exhibiting better stability over long-term use. This invention employs laser cutting technology to create flow windows near the electrodes, facilitating liquid flow and improving sensor response time.

[0019] This invention proposes a novel process for preparing platinum / ceramic cores through a single-step debinding and sintering process. This reduces the impact of internal defects and deformation on precision, as debinding and sintering are completed in one step, eliminating the need for a separate debinding process. This avoids breakage during transport due to the low strength of the ceramic sheet after debinding, and also halves the sintering time. When debinding and sintering are performed in stages, the grain size is between 0.9 and 1 μm, the pore size is approximately 0.64 μm, the flexural strength is 450 MPa, and there are many defects and pores. When debinding and sintering are completed in one step, the grain size is between 0.6 and 0.7 μm, the pore size is approximately 0.45 μm, the flexural strength is 600 MPa, and the ceramic properties are better.

[0020] The beneficial effects of this invention are:

[0021] (1) The main process of this invention is the use of ceramic-based thermal film. The impact of radiation, high temperature, and high pressure on accuracy is a key issue that needs to be addressed. The ceramic substrate of this invention adopts a window structure to reduce flow resistance; it adopts an array platinum film resistor line structure to reduce temperature gradient, improve heat transfer efficiency, and enhance accuracy; it uses alumina ceramic with a small amount of cerium oxide doped as the substrate to reduce the impact of radiation on the stability of sensor materials and improve service life; and it adopts a multi-layer integrated structure of composite ceramic protective material layer, double-sided platinum film resistor layer, and ceramic substrate to meet the specific environmental requirements of high temperature, high pressure, and radiation.

[0022] This invention is based on ceramic co-firing technology, and its main processes include punching, screen printing, lamination, cutting, and debinding sintering. Flow sensors with different flow rates and velocities are fabricated through electrode material systems, structural design, and calibration. The manufacturing method of this invention can reduce temperature gradients and improve heat exchange efficiency, thereby increasing accuracy and service life, and meeting the specific environmental requirements of high temperature, high pressure, and irradiation. Furthermore, the sensors developed using these technologies possess advantages such as high sensitivity, good stability, and corrosion resistance, effectively improving sensor accuracy.

[0023] (2) This invention proposes a novel process for preparing platinum / ceramic cores through a single-step debinding and sintering process. This reduces the impact of internal defects and deformation on the precision of the core. Debinding and sintering are completed in one step, eliminating the need for a separate debinding process. This avoids the low strength of the ceramic sheet after debinding, which can lead to breakage during transport. Furthermore, it halves the sintering time. When debinding and sintering are performed in stages, the grain size is between 0.9 and 1 μm, the pore size is approximately 0.64 μm, the flexural strength is 450 MPa, and there are many defects and pores. When debinding and sintering are completed in one step, the grain size is between 0.6 and 0.7 μm, the pore size is approximately 0.45 μm, the flexural strength is 600 MPa, and the ceramic properties are better.

[0024] (3) This invention uses high temperature co-sintering technology (HTCC) and laser cutting technology (LBC) to manufacture thermal flow sensors. The sensors developed using the above technologies have advantages such as high sensitivity, good stability and corrosion resistance, which effectively improves the accuracy of the sensors.

[0025] (4) The present invention can make sensitive devices with different temperature range characteristics by adjusting the size and specifications of the temperature sensing electrode and the heating electrode, and adapt to flow sensors with different flow rates.

[0026] This invention provides a radiation-resistant, high-temperature, and high-pressure thermal flow sensor and its preparation method. Attached Figure Description

[0027] Figure 1 This is an exploded view of a radiation-resistant, high-temperature, and high-pressure thermal flow sensor according to the present invention. 1 represents the ceramic substrate; 1-1 represents electrode via a; 1-2 represents electrode via b; 1-3 represents lead-out via a; 1-4 represents lead-out via b; 1-5 represents lead-out via c; 1-6 represents lead-out via d; 1-7 represents window structure a; 1-8 represents window structure b; 2Z-1 represents temperature-sensing electrode a; 2Z-2 represents the via of temperature-sensing electrode a; 3Z-1 represents heating electrode a; 3Z-2 represents the via of heating electrode a; 2Z-1a represents the lead-out via of temperature-sensing electrode a. Line a, 2Z-1b indicates via of temperature sensing electrode lead a, 3Z-1a indicates via of heating electrode lead a, 3Z-1b indicates via of heating electrode lead a, 2F-1 indicates temperature sensing electrode b, 2F-2 indicates via of temperature sensing electrode b, 3F-1 indicates via of heating electrode b, 3F-2 indicates via of heating electrode b, 2F-1a indicates via of temperature sensing electrode lead b, 2F-1b indicates via of temperature sensing electrode lead b, 3F-1a indicates via of heating electrode lead b, 3F-1b indicates via of heating electrode lead b, 2 indicates insulating protective layer a, 3 indicates insulating protective layer b;

[0028] Figure 2This is a front view of a radiation-resistant, high-temperature, and high-pressure thermal flow sensor of the present invention. 1 represents a ceramic substrate, 2 represents an insulating protective layer a, 3 represents an insulating protective layer b, 2Z-1 represents a temperature sensing electrode a, 3Z-1 represents a heating electrode a, 2F-1 represents a temperature sensing electrode b, and 3F-1 represents a heating electrode b.

[0029] Figure 3 This is a top view of a radiation-resistant, high-temperature, and high-pressure thermal flow sensor of the present invention. 1-1 represents electrode through-hole a, 1-2 represents electrode through-hole b, 1-3 represents lead-out through-hole a, 1-5 represents lead-out through-hole c, 1-7 represents window structure a, 1-8 represents window structure b, 2Z-1 represents temperature sensing electrode a, 3Z-1 represents heating electrode a, 2Z-1a represents temperature sensing electrode lead a, and 3Z-1a represents heating electrode lead a. Detailed Implementation

[0030] Specific Implementation Method 1: This implementation method provides a radiation-resistant, high-temperature, and high-pressure thermal flow sensor, comprising a ceramic substrate 1, an electrode array, electrode leads, and a protective insulating layer. The ceramic substrate 1 is composed of first, second, third, and fourth ceramic green ceramic strips stacked sequentially. The electrode array comprises a temperature-sensing electrode a2Z-1, a heating electrode a3Z-1, a temperature-sensing electrode b2F-1, and a heating electrode b3F-1. The electrode leads comprise a temperature-sensing electrode lead a2Z-1a, a heating electrode lead a3Z-1a, a temperature-sensing electrode lead b2F-1a, and a heating electrode lead b3F-1a. The protective insulating layer comprises an insulating protective layer a2 and an insulating protective layer b3.

[0031] The ceramic substrate 1 is provided with window structure a 1-7 and window structure b 1-8. An electrode via a 1-1 is provided next to the window structure a 1-7, and an electrode via b 1-2 is provided next to the window structure b 1-8. Lead-out vias a 1-3, b 1-4, c 1-5 and d 1-6 are respectively provided on one side surface of the ceramic substrate 1.

[0032] The upper surface of the ceramic substrate 1 is provided with a temperature sensing electrode a 2Z-1, a temperature sensing electrode lead a 2Z-1a, a heating electrode a 3Z-1, and a heating electrode lead a 3Z-1a. The temperature sensing electrode a 2Z-1 is provided with a temperature sensing electrode a through hole 2Z-2, and the temperature sensing electrode lead a 2Z-1a is provided with a temperature sensing electrode lead a through hole 2Z-1b. The temperature sensing electrode a 2Z-1 is electrically connected to the temperature sensing electrode lead a 2Z-1a. The heating electrode a 3Z-1 is provided with a heating electrode a through hole 3Z-2, and the heating electrode lead a 3Z-1a is provided with a heating electrode lead a through hole 3Z-1b. The heating electrode a 3Z-1 is electrically connected to the heating electrode lead a 3Z-1a.

[0033] The lower surface of the ceramic substrate 1 is provided with a temperature sensing electrode b 2F-1, a temperature sensing electrode lead b 2F-1a, a heating electrode b 3F-1, and a heating electrode lead b 3F-1a. The temperature sensing electrode b 2F-1 is provided with a temperature sensing electrode b through hole 2F-2, and the temperature sensing electrode lead b 2F-1a is provided with a temperature sensing electrode lead b through hole 2F-1b. The temperature sensing electrode b 2F-1 and the temperature sensing electrode lead b 2F-1a are electrically connected. The heating electrode b 3F-1 is provided with a heating electrode b through hole 3F-2, and the heating electrode lead b 3F-1a is provided with a heating electrode lead b through hole 3F-1b. The heating electrode b 3F-1 and the heating electrode lead b 3F-1a are electrically connected.

[0034] The center lines of the vias 2Z-2 and 1-1 of the temperature sensing electrode a and 2F-2 of the temperature sensing electrode b coincide; the center lines of the vias 3Z-2 and 1-2 of the heating electrode a and 3F-2 of the heating electrode b coincide; the center lines of the vias 2Z-1b of the temperature sensing electrode lead a and 1-3 of the lead-out via coincide; the center lines of the vias 3Z-1b of the heating electrode lead a and 1-5 of the lead-out via coincide; the center lines of the vias 1-4 and 2F-1b of the temperature sensing electrode lead b coincide; and the center lines of the vias 1-6 and 3F-1b of the heating electrode lead b coincide.

[0035] An insulating protective layer a2 is provided on the upper surface of the temperature sensing electrode a2Z-1, the temperature sensing electrode lead a2Z-1a, the heating electrode a3Z-1, and the heating electrode lead a3Z-1a, and an insulating protective layer b3 is provided on the lower surface of the temperature sensing electrode b2F-1, the temperature sensing electrode lead b2F-1a, the heating electrode b3F-1, and the heating electrode lead b3F-1a.

[0036] Specific Implementation Method Two: This implementation method describes a method for preparing a radiation-resistant, high-temperature, and high-pressure thermal flow sensor, which is carried out according to the following steps:

[0037] Step 1: Stack the first, second, third, and fourth ceramic green ceramic strips sequentially, wrap them with a silicone mold, vacuum seal them, and then place them in a warm water isostatic press. Laminate them for 2-3 hours at 70-85℃ and 6400-7200psi, then sinter them at 1000-1200℃ to obtain ceramic substrate 1. Using a punching technique, create arrayed window structures a1-7 and b1-8 on the ceramic substrate 1. Electrode vias a1-1 and b1-2 are then created next to window structures a1-7 and b1-8, respectively. Lead-out vias a1-3, b1-4, c1-5, and d1-6 are also provided on one side surface of the ceramic substrate 1. Finally, electrode vias a1-1, b1-2, and c1-6 are also created. 1-3, via b; 1-4, via c; 1-5, and via d; 1-6 are filled with metal paste.

[0038] Step 2: Prepare a temperature sensing electrode a 2Z-1, a temperature sensing electrode lead a 2Z-1a, a heating electrode a 3Z-1, and a heating electrode lead a 3Z-1a on the upper surface of the ceramic substrate 1. Create a temperature sensing electrode a through-hole 2Z-2 on the temperature sensing electrode a 2Z-1, a temperature sensing electrode lead a through-hole 2Z-1b on the temperature sensing electrode lead a 2Z-1a, a heating electrode a through-hole 3Z-2 on the heating electrode a 3Z-1, and a heating electrode lead a through-hole 3Z-1b on the heating electrode lead a 3Z-1a. Electrically connect the temperature sensing electrode a 2Z-1 to the temperature sensing electrode lead a 2Z-1a and the heating electrode a 3Z-1 to the heating electrode lead a 3Z-1a.

[0039] Simultaneously, a temperature-sensing electrode b2F-1, a temperature-sensing electrode lead b2F-1a, a heating electrode b3F-1, and a heating electrode lead b3F-1a are fabricated on the lower surface of a ceramic substrate 1 using screen printing. A temperature-sensing electrode through-hole 2F-2 is formed on the temperature-sensing electrode b2F-1, a temperature-sensing electrode lead b through-hole 2F-1b is formed on the temperature-sensing electrode lead b2F-1a, a heating electrode through-hole 3F-2 is formed on the heating electrode b3F-1, and a heating electrode lead b through-hole 3F-1b is formed on the heating electrode lead b3F-1a. The temperature-sensing electrode b2F-1 and the temperature-sensing electrode lead b2F-1a are electrically connected, as are the heating electrode b3F-1 and the heating electrode lead b3F-1a. Furthermore, the temperature-sensing electrode through-hole 2F-2 and the electrode through-hole a are also electrically connected. 1-1 coincides with the center line of the center of the through hole 2F-2 of the temperature sensing electrode b; 1-2 of the heating electrode a and through hole 3Z-2 coincide with the center line of the center of the center of the through hole 3F-2 of the heating electrode b; 2Z-1b of the temperature sensing electrode lead a coincides with the center line of the center of the center of the through hole a 1-3; 3Z-1b of the heating electrode lead a coincides with the center line of the center of the center of the center of the through hole c 1-5; 1-4 of the through hole b coincides with the center line of the center of the center of the through hole 2F-1b of the temperature sensing electrode lead b; 1-6 of the through hole d coincides with the center line of the center of the center of the through hole 3F-1b of the heating electrode lead b.

[0040] Step 3: An insulating protective layer a2 is prepared on the upper surface of the temperature sensing electrode a2Z-1, temperature sensing electrode lead a2Z-1a, heating electrode a3Z-1, and heating electrode lead a3Z-1a using a screen printing method. Simultaneously, an insulating protective layer b3 is prepared on the lower surface of the temperature sensing electrode b2F-1, temperature sensing electrode lead b2F-1a, heating electrode b3F-1, and heating electrode lead b3F-1a. Finally, the layers are sintered and fixed at a temperature of 750–800℃ to obtain a radiation-resistant high-temperature and high-pressure thermal flow sensor.

[0041] Specific Implementation Method Three: This implementation method differs from Specific Implementation Method Two in that the first, second, third, and fourth ceramic green ceramic belts mentioned in step one are all alumina or silicon nitride doped with rare earth elements. The preparation steps of the alumina doped with rare earth elements are as follows:

[0042] Step (1): Add isopropanol to water and stir at 300 rpm for 10 minutes at room temperature to obtain an isopropanol solution;

[0043] Step (2): Heat aluminum isopropoxide to 140°C until completely melted, then cool to 55°C, and add isopropanol. Stir for 10 min at 50°C and 150 rpm. Then, at 50°C, add the isopropanol solution from step (1) at a rate of 5 mL / min using a peristaltic pump. Continue stirring for 1 h at 50°C and 350 rpm. Then, add water at a rate of 5 mL / min using a peristaltic pump. Continue stirring for 1 h at 50°C. After stirring, dry at 85°C for 12 h.

[0044] Step (3): Cerium oxide powder is doped into the dried product of step (2), with a doping amount of 1-5%; wet ball milling is performed using 0.65mm alumina beads and aluminum hydroxide solution until d50 = 9um and d90 = 22um, and the mass ratio of aluminum hydroxide to water in the aluminum hydroxide solution is 1:10. The mixture is then filtered to obtain aluminum hydroxide slurry; the aluminum hydroxide slurry is then spray-granulated to obtain microparticles with a diameter of 9um. The outlet temperature is 100℃, and the temperature is finally raised to 1170℃ at a rate of 300℃ / h and calcined at 1170℃ for 3h to obtain alumina doped with rare earth elements.

[0045] By doping alumina or silicon nitride ceramics with radiation-resistant protective materials, the radiation resistance of the main material can be improved, extending the service life of the sensor; doping with rare earth elements has a toughening effect, providing strong resistance to hydrothermal aging and radiation conditions.

[0046] In step (3), alumina beads are used as abrasives and aluminum hydroxide solution is used as abrasive slurry to avoid introducing other impurities. d50 and d90 represent the characterization methods of powder particle size. d50 = 9um means that 50% of the powder has a particle size of 9um, and d90 = 22um means that 50% of the powder has a particle size of 22um.

[0047] The other steps are the same as in Specific Implementation Method Two.

[0048] Specific Implementation Method Four: The difference between this implementation method and Specific Implementation Method Two or Three is that: in step one, electrode vias a1-1, b1-2, a1-3, b1-4, c1-5, and d1-6 are all opened by mechanical drilling, and platinum slurry is filled into electrode vias a1-1, b1-2, a1-3, b1-4, c1-5, and d1-6 using a hot air adsorption filling process;

[0049] In step one, the thickness of the ceramic substrate 1 is 0.8–1.6 mm;

[0050] In step two, the temperature sensing electrode a 2Z-1, the heating electrode a 3Z-1, the temperature sensing electrode b 2F-1, and the heating electrode b 3F-1 are prepared by screen printing, and the temperature sensing electrode lead a 2Z-1a, the heating electrode lead a 3Z-1a, the temperature sensing electrode lead b 2F-1a, and the heating electrode lead b 3F-1a are prepared by magnetron sputtering.

[0051] The other steps are the same as in specific implementation methods two or three.

[0052] Specific Implementation Method Five: This implementation method differs from Specific Implementation Methods Two to Four in that: In step three, an insulating protective layer a2 is prepared on the upper surface of the temperature sensing electrode a2Z-1, the temperature sensing electrode lead a2Z-1a, the heating electrode a3Z-1, and the heating electrode lead a3Z-1a using a screen printing method. Simultaneously, an insulating protective layer b3 is prepared on the lower surface of the temperature sensing electrode b2F-1, the temperature sensing electrode lead b2F-1a, the heating electrode b3F-1, and the heating electrode lead b3F-1a. The specific steps are as follows:

[0053] Step a: The upper surfaces of the temperature sensing electrode a 2Z-1, temperature sensing electrode lead a 2Z-1a, heating electrode a 3Z-1 and heating electrode lead a 3Z-1a, and the lower surfaces of the temperature sensing electrode b 2F-1, temperature sensing electrode lead b 2F-1a, heating electrode b 3F-1 and heating electrode lead b 3F-1a are sequentially subjected to preheating treatment, roughening treatment and purification treatment;

[0054] Step b: Using Al2O3-TiO2 powder as the coating material and plasma jet as the heat source, the ceramic powder is heated to a molten state and sprayed onto the upper surfaces of the temperature sensing electrode a2Z-1, temperature sensing electrode lead a2Z-1a, heating electrode a3Z-1, and heating electrode lead a3Z-1a, as well as the lower surfaces of the temperature sensing electrode b2F-1, temperature sensing electrode lead b2F-1a, heating electrode b3F-1, and heating electrode lead b3F-1a. After deformation, spreading, and deposition processes, insulating protective layers a2 and b3 are prepared.

[0055] The other steps are the same as those in specific implementation methods two to four.

[0056] Specific Implementation Method Six: The difference between this implementation method and Specific Implementation Methods Two to Five is that the temperature sensing electrode a 2Z-1, heating electrode a 3Z-1, temperature sensing electrode b 2F-1, and heating electrode b 3F-1 are all Pt, Au, or Ag.

[0057] The other steps are the same as those in specific implementation methods two to five.

[0058] Specific Implementation Method Seven: The difference between this implementation method and Specific Implementation Methods Two to Six is ​​that the thicknesses of the first, second, third, and fourth ceramic green porcelain strips are (110-130) μm, (190-210) μm, (110-130) μm, and (190-210) μm, respectively. The side with the directional markings on the first, second, third, and fourth ceramic green porcelain strips is the front side, and the other side is the back side.

[0059] The other steps are the same as those in specific implementation methods two to six.

[0060] Specific Implementation Method Eight: The difference between this implementation method and one of Specific Implementation Methods Two to Seven is that the temperature sensing electrode lead a 2Z-1a, the heating electrode lead a 3Z-1a, the temperature sensing electrode lead b 2F-1a, and the heating electrode lead b 3F-1a are all Pt, and the sintering temperature of the temperature sensing electrode, the heating electrode, and the lead are all 1300~1450℃.

[0061] The other steps are the same as those in specific implementation methods two to seven.

[0062] Specific Implementation Method Nine: The difference between this implementation method and Specific Implementation Methods Two to Eight is that the insulating protective layer a2 and the insulating protective layer b3 are both nano-alumina with a thickness of 0.01 to 0.05 mm and a sintering temperature of 700 to 1100 °C.

[0063] The other steps are the same as those in specific implementation methods two to eight.

[0064] Specific Implementation Method 10: The difference between this implementation method and Specific Implementation Methods 2 to 9 is that the width of the temperature sensing electrode and the heating electrode is 0.1 to 0.5 mm, the line spacing is 0.1 to 1 mm, and the room temperature resistance value is 200Ω ± 20Ω.

[0065] The other steps are the same as those in Specific Implementation Methods 2 to 9.

[0066] The beneficial effects of the present invention are verified using the following embodiments:

[0067] Example 1: A radiation-resistant, high-temperature, and high-pressure thermal flow sensor, comprising a ceramic substrate 1, an electrode array, electrode leads, and a protective insulating layer. The ceramic substrate 1 is composed of first, second, third, and fourth ceramic green ceramic strips stacked sequentially. The electrode array comprises a temperature-sensing electrode a 2Z-1, a heating electrode a 3Z-1, a temperature-sensing electrode b 2F-1, and a heating electrode b 3F-1. The electrode leads comprise a temperature-sensing electrode lead a 2Z-1a, a heating electrode lead a 3Z-1a, a temperature-sensing electrode lead b 2F-1a, and a heating electrode lead b 3F-1a. The protective insulating layer comprises an insulating protective layer a 2 and an insulating protective layer b 3.

[0068] The ceramic substrate 1 is provided with window structure a 1-7 and window structure b 1-8. An electrode via a 1-1 is provided next to the window structure a 1-7, and an electrode via b 1-2 is provided next to the window structure b 1-8. Lead-out vias a 1-3, b 1-4, c 1-5 and d 1-6 are respectively provided on one side surface of the ceramic substrate 1.

[0069] The upper surface of the ceramic substrate 1 is provided with a temperature sensing electrode a 2Z-1, a temperature sensing electrode lead a 2Z-1a, a heating electrode a 3Z-1, and a heating electrode lead a 3Z-1a. The temperature sensing electrode a 2Z-1 is provided with a temperature sensing electrode a through hole 2Z-2, and the temperature sensing electrode lead a 2Z-1a is provided with a temperature sensing electrode lead a through hole 2Z-1b. The temperature sensing electrode a 2Z-1 is electrically connected to the temperature sensing electrode lead a 2Z-1a. The heating electrode a 3Z-1 is provided with a heating electrode a through hole 3Z-2, and the heating electrode lead a 3Z-1a is provided with a heating electrode lead a through hole 3Z-1b. The heating electrode a 3Z-1 is electrically connected to the heating electrode lead a 3Z-1a.

[0070] The lower surface of the ceramic substrate 1 is provided with a temperature sensing electrode b 2F-1, a temperature sensing electrode lead b 2F-1a, a heating electrode b 3F-1, and a heating electrode lead b 3F-1a. The temperature sensing electrode b 2F-1 is provided with a temperature sensing electrode b through hole 2F-2, and the temperature sensing electrode lead b 2F-1a is provided with a temperature sensing electrode lead b through hole 2F-1b. The temperature sensing electrode b 2F-1 and the temperature sensing electrode lead b 2F-1a are electrically connected. The heating electrode b 3F-1 is provided with a heating electrode b through hole 3F-2, and the heating electrode lead b 3F-1a is provided with a heating electrode lead b through hole 3F-1b. The heating electrode b 3F-1 and the heating electrode lead b 3F-1a are electrically connected.

[0071] The center lines of the vias 2Z-2 and 1-1 of the temperature sensing electrode a and 2F-2 of the temperature sensing electrode b coincide; the center lines of the vias 3Z-2 and 1-2 of the heating electrode a and 3F-2 of the heating electrode b coincide; the center lines of the vias 2Z-1b of the temperature sensing electrode lead a and 1-3 of the lead-out via coincide; the center lines of the vias 3Z-1b of the heating electrode lead a and 1-5 of the lead-out via coincide; the center lines of the vias 1-4 and 2F-1b of the temperature sensing electrode lead b coincide; and the center lines of the vias 1-6 and 3F-1b of the heating electrode lead b coincide.

[0072] An insulating protective layer a2 is provided on the upper surface of the temperature sensing electrode a2Z-1, the temperature sensing electrode lead a2Z-1a, the heating electrode a3Z-1, and the heating electrode lead a3Z-1a, and an insulating protective layer b3 is provided on the lower surface of the temperature sensing electrode b2F-1, the temperature sensing electrode lead b2F-1a, the heating electrode b3F-1, and the heating electrode lead b3F-1a.

[0073] Example 2: A method for preparing a radiation-resistant, high-temperature, and high-pressure thermal flow sensor, comprising the following steps:

[0074] Step 1: Stack the first, second, third, and fourth ceramic green ceramic strips sequentially, wrap them with a silicone mold, vacuum seal them, and then place them in a warm water isostatic press. Laminate them for 3 hours at 70℃ and 7200psi, and then sinter them at 1000-1200℃ to obtain ceramic substrate 1. Using a punching technique, arrayed window structures a1-7 and b1-8 are created on the ceramic substrate 1. Electrode vias a1-1 and b1-2 are created next to window structures a1-7 and b1-8, respectively. Lead-out vias a1-3, b1-4, c1-5, and d1-6 are respectively provided on one side surface of the ceramic substrate 1. Electrode vias a1-1, b1-2, a1-3, and b1-6 are then formed. 1-4, lead-out vias c, 1-5, and d, 1-6 are filled with metal paste;

[0075] The dimensions of window structure a 1-7 and window structure b 1-8 are 6mm × 30mm, and the distance from the edge of the window to the platinum electrode is greater than 0.3mm.

[0076] Step 2: Prepare a temperature sensing electrode a 2Z-1, a temperature sensing electrode lead a 2Z-1a, a heating electrode a 3Z-1, and a heating electrode lead a 3Z-1a on the upper surface of the ceramic substrate 1. Create a temperature sensing electrode a through-hole 2Z-2 on the temperature sensing electrode a 2Z-1, a temperature sensing electrode lead a through-hole 2Z-1b on the temperature sensing electrode lead a 2Z-1a, a heating electrode a through-hole 3Z-2 on the heating electrode a 3Z-1, and a heating electrode lead a through-hole 3Z-1b on the heating electrode lead a 3Z-1a. Electrically connect the temperature sensing electrode a 2Z-1 to the temperature sensing electrode lead a 2Z-1a and the heating electrode a 3Z-1 to the heating electrode lead a 3Z-1a.

[0077] Simultaneously, a temperature-sensing electrode b2F-1, a temperature-sensing electrode lead b2F-1a, a heating electrode b3F-1, and a heating electrode lead b3F-1a are fabricated on the lower surface of a ceramic substrate 1 using screen printing. A temperature-sensing electrode through-hole 2F-2 is formed on the temperature-sensing electrode b2F-1, a temperature-sensing electrode lead b through-hole 2F-1b is formed on the temperature-sensing electrode lead b2F-1a, a heating electrode through-hole 3F-2 is formed on the heating electrode b3F-1, and a heating electrode lead b through-hole 3F-1b is formed on the heating electrode lead b3F-1a. The temperature-sensing electrode b2F-1 and the temperature-sensing electrode lead b2F-1a are electrically connected, as are the heating electrode b3F-1 and the heating electrode lead b3F-1a. Furthermore, the temperature-sensing electrode through-hole 2F-2 and the electrode through-hole a are also electrically connected. 1-1 coincides with the center line of the center of the through hole 2F-2 of the temperature sensing electrode b; 1-2 of the heating electrode a and through hole 3Z-2 coincide with the center line of the center of the center of the through hole 3F-2 of the heating electrode b; 2Z-1b of the temperature sensing electrode lead a coincides with the center line of the center of the center of the through hole a 1-3; 3Z-1b of the heating electrode lead a coincides with the center line of the center of the center of the center of the through hole c 1-5; 1-4 of the through hole b coincides with the center line of the center of the center of the through hole 2F-1b of the temperature sensing electrode lead b; 1-6 of the through hole d coincides with the center line of the center of the center of the through hole 3F-1b of the heating electrode lead b.

[0078] Step 3: An insulating protective layer a2 is prepared on the upper surface of the temperature sensing electrode a2Z-1, temperature sensing electrode lead a2Z-1a, heating electrode a3Z-1, and heating electrode lead a3Z-1a using a screen printing method. Simultaneously, an insulating protective layer b3 is prepared on the lower surface of the temperature sensing electrode b2F-1, temperature sensing electrode lead b2F-1a, heating electrode b3F-1, and heating electrode lead b3F-1a. Finally, the layers are sintered and fixed at a temperature of 750–800℃ to obtain a radiation-resistant high-temperature and high-pressure thermal flow sensor.

[0079] The first, second, third, and fourth ceramic green ceramic belts mentioned in step one are all alumina or silicon nitride doped with rare earth elements. The preparation steps of the alumina doped with rare earth elements are as follows:

[0080] Step (1): Add isopropanol to water and stir at 300 rpm for 10 minutes at room temperature to obtain an isopropanol solution;

[0081] Step (2): Heat aluminum isopropoxide to 140°C until completely melted, then cool to 55°C, and add isopropanol. Stir for 10 min at 50°C and 150 rpm. Then, at 50°C, add the isopropanol solution from step (1) at a rate of 5 mL / min using a peristaltic pump. Continue stirring for 1 h at 50°C and 350 rpm. Then, add water at a rate of 5 mL / min using a peristaltic pump. Continue stirring for 1 h at 50°C. After stirring, dry at 85°C for 12 h.

[0082] Step (3): Cerium oxide powder is doped into the dried product of step (2), with a doping amount of 1-5%; wet ball milling is performed using 0.65mm alumina beads and aluminum hydroxide solution until d50 = 9um and d90 = 22um, and the mass ratio of aluminum hydroxide to water in the aluminum hydroxide solution is 1:10. The mixture is then filtered to obtain aluminum hydroxide slurry; the aluminum hydroxide slurry is then spray-granulated to obtain microparticles with a diameter of 9um. The outlet temperature is 100℃, and the temperature is finally raised to 1170℃ at a rate of 300℃ / h and calcined at 1170℃ for 3h to obtain alumina doped with rare earth elements.

[0083] In step one, electrode vias a 1-1, b 1-2, a 1-3, b 1-4, c 1-5, and d 1-6 are all drilled mechanically, and platinum slurry is filled into electrode vias a 1-1, b 1-2, a 1-3, b 1-4, c 1-5, and d 1-6 using a hot air adsorption filling process.

[0084] In step one, the thickness of the ceramic substrate 1 is 0.8–1.6 mm;

[0085] In step two, the temperature sensing electrode a 2Z-1, the heating electrode a 3Z-1, the temperature sensing electrode b 2F-1, and the heating electrode b 3F-1 are prepared by screen printing, and the temperature sensing electrode lead a 2Z-1a, the heating electrode lead a 3Z-1a, the temperature sensing electrode lead b 2F-1a, and the heating electrode lead b 3F-1a are prepared by magnetron sputtering.

[0086] In step three, an insulating protective layer a2 is prepared on the upper surface of the temperature sensing electrode a2Z-1, the temperature sensing electrode lead a2Z-1a, the heating electrode a3Z-1, and the heating electrode lead a3Z-1a using a screen printing method. Simultaneously, an insulating protective layer b3 is prepared on the lower surface of the temperature sensing electrode b2F-1, the temperature sensing electrode lead b2F-1a, the heating electrode b3F-1, and the heating electrode lead b3F-1a. The specific steps are as follows:

[0087] Step a: The upper surfaces of the temperature sensing electrode a 2Z-1, temperature sensing electrode lead a 2Z-1a, heating electrode a 3Z-1 and heating electrode lead a 3Z-1a, and the lower surfaces of the temperature sensing electrode b 2F-1, temperature sensing electrode lead b 2F-1a, heating electrode b 3F-1 and heating electrode lead b 3F-1a are sequentially subjected to preheating treatment, roughening treatment and purification treatment;

[0088] Step b: Using Al2O3-TiO2 powder as the coating material and plasma jet as the heat source, the ceramic powder is heated to a molten state and sprayed onto the upper surfaces of the temperature sensing electrode a2Z-1, temperature sensing electrode lead a2Z-1a, heating electrode a3Z-1, and heating electrode lead a3Z-1a, as well as the lower surfaces of the temperature sensing electrode b2F-1, temperature sensing electrode lead b2F-1a, heating electrode b3F-1, and heating electrode lead b3F-1a. After deformation, spreading, and deposition processes, insulating protective layers a2 and b3 are prepared.

[0089] The temperature sensing electrode a 2Z-1, heating electrode a 3Z-1, temperature sensing electrode b 2F-1, and heating electrode b 3F-1 are all Pt, Au, or Ag.

[0090] The thicknesses of the first, second, third, and fourth ceramic green porcelain strips are 120μm, 200μm, 120μm, and 200μm, respectively. The side with the directional markings on the first, second, third, and fourth ceramic green porcelain strips is the front side, and the other side is the back side.

[0091] The temperature sensing electrode lead a 2Z-1a, heating electrode lead a 3Z-1a, temperature sensing electrode lead b 2F-1a, and heating electrode lead b 3F-1a are all Pt, and the sintering temperature of the temperature sensing electrode, heating electrode, and leads is 1400℃.

[0092] Both the insulating protective layer a2 and the insulating protective layer b3 are nano-alumina with a thickness of 0.01 to 0.05 mm and a sintering temperature of 1050 °C.

[0093] The width of the temperature sensing electrode and the heating electrode is 0.2 mm, the line spacing is 0.3 mm, and the resistance value at room temperature is 200 Ω ± 20 Ω.

[0094] Sensitive devices with different temperature range characteristics can be manufactured by adjusting the size and specifications of the temperature sensing electrode and the heating electrode, thus adapting to flow sensors with different flow rates.

Claims

1. A radiation-resistant, high-temperature, and high-pressure thermal flow sensor, characterized in that... The radiation-resistant high-temperature and high-pressure thermal flow sensor consists of a ceramic substrate (1), an electrode array, electrode leads, and a protective insulating layer. The ceramic substrate (1) is composed of first, second, third, and fourth ceramic green ceramic strips stacked sequentially. The electrode array consists of a temperature sensing electrode a (2Z-1), a heating electrode a (3Z-1), a temperature sensing electrode b (2F-1), and a heating electrode b (3F-1). The electrode leads consist of a temperature sensing electrode lead a (2Z-1a), a heating electrode lead a (3Z-1a), a temperature sensing electrode lead b (2F-1a), and a heating electrode lead b (3F-1a). The protective insulating layer consists of an insulating protective layer a (2) and an insulating protective layer b (3). The ceramic substrate (1) is provided with window structure a (1-7) and window structure b (1-8). An electrode via a (1-1) is provided next to the window structure a (1-7), and an electrode via b (1-2) is provided next to the window structure b (1-8). On one side surface of the ceramic substrate (1), there are lead-out vias a (1-3), b (1-4), c (1-5), and d (1-6). The upper surface of the ceramic substrate (1) is provided with a temperature sensing electrode a (2Z-1), a temperature sensing electrode lead a (2Z-1a), a heating electrode a (3Z-1), and a heating electrode lead a (3Z-1a); the temperature sensing electrode a (2Z-1) is provided with a temperature sensing electrode a through hole (2Z-2), the temperature sensing electrode lead a (2Z-1a) is provided with a temperature sensing electrode lead a through hole (2Z-1b), and the temperature sensing electrode a (2Z-1) is electrically connected to the temperature sensing electrode lead a (2Z-1a); the heating electrode a (3Z-1) is provided with a heating electrode a through hole (3Z-2), the heating electrode lead a (3Z-1a) is provided with a heating electrode lead a through hole (3Z-1b), and the heating electrode a (3Z-1) is electrically connected to the heating electrode lead a (3Z-1a); The lower surface of the ceramic substrate (1) is provided with a temperature sensing electrode b (2F-1), a temperature sensing electrode lead b (2F-1a), a heating electrode b (3F-1), and a heating electrode lead b (3F-1a); the temperature sensing electrode b (2F-1) is provided with a temperature sensing electrode b through hole (2F-2), the temperature sensing electrode lead b (2F-1a) is provided with a temperature sensing electrode lead b through hole (2F-1b), and the temperature sensing electrode b (2F-1) is electrically connected to the temperature sensing electrode lead b (2F-1a); the heating electrode b (3F-1) is provided with a heating electrode b through hole (3F-2), the heating electrode lead b (3F-1a) is provided with a heating electrode lead b through hole (3F-1b), and the heating electrode b (3F-1) is electrically connected to the heating electrode lead b (3F-1a); The center lines of the vias (2Z-2) and (1-1) of the temperature sensing electrode a and the via (2F-2) of the temperature sensing electrode b coincide; the center lines of the vias (3Z-2) and (1-2) of the heating electrode a and the via (3F-2) of the heating electrode b coincide; the center lines of the vias (2Z-1b) of the temperature sensing electrode lead a coincide with the center line of the lead-out via a (1-3); the center lines of the vias (3Z-1b) of the heating electrode lead a coincide with the center line of the lead-out via c (1-5); the center lines of the lead-out via b (1-4) coincide with the center line of the via (2F-1b) of the temperature sensing electrode lead b; and the center lines of the lead-out via d (1-6) coincide with the center line of the via (3F-1b) of the heating electrode lead b. An insulating protective layer a (2) is provided on the upper surface of the temperature sensing electrode a (2Z-1), temperature sensing electrode lead a (2Z-1a), heating electrode a (3Z-1) and heating electrode lead a (3Z-1a), and an insulating protective layer b (3) is provided on the lower surface of the temperature sensing electrode b (2F-1), temperature sensing electrode lead b (2F-1a), heating electrode b (3F-1) and heating electrode lead b (3F-1a).

2. The method for preparing a radiation-resistant, high-temperature, and high-pressure thermal flow sensor as described in claim 1, characterized in that... The preparation method is carried out according to the following steps: Step 1: Stack the first, second, third, and fourth ceramic green ceramic strips in sequence, wrap them with a silicone mold, vacuum seal them, and then place them in a warm water isostatic press. Laminate them for 2-3 hours at a temperature of 70-85℃ and a pressure of 6400-7200psi, and then sinter them at a temperature of 1000-1200℃ to obtain a ceramic substrate (1). Use punching technology to open window structures a (1-7) and b (1-8) arranged in an array on the ceramic substrate (1), and respectively on window structure a (1-7) and b (1-8) Electrode vias a (1-1) and b (1-2) are made next to the window structure b (1-8), and lead-out vias a (1-3), b (1-4), c (1-5) and d (1-6) are respectively provided on one side surface of the ceramic substrate (1). Then, metal paste is filled into the electrode vias a (1-1), b (1-2), a (1-3), b (1-4), c (1-5) and d (1-6). Step 2: Prepare a temperature sensing electrode a (2Z-1), a temperature sensing electrode lead a (2Z-1a), a heating electrode a (3Z-1), and a heating electrode lead a (3Z-1a) on the upper surface of the ceramic substrate (1). Make a temperature sensing electrode a through hole (2Z-2) on the temperature sensing electrode a (2Z-1), a temperature sensing electrode lead a through hole (2Z-1b) on the temperature sensing electrode lead a (2Z-1a), a heating electrode a through hole (3Z-2) on the heating electrode a (3Z-1), and a heating electrode lead a through hole (3Z-1b) on the heating electrode lead a (3Z-1a). Connect the temperature sensing electrode a (2Z-1) to the temperature sensing electrode lead a (2Z-1a) and the heating electrode a (3Z-1) to the heating electrode lead a (3Z-1a). Simultaneously, a temperature-sensing electrode b (2F-1), a temperature-sensing electrode lead b (2F-1a), a heating electrode b (3F-1), and a heating electrode lead b (3F-1a) are fabricated on the lower surface of a ceramic substrate (1) using a screen printing method. A temperature-sensing electrode through-hole (2F-2) is formed on the temperature-sensing electrode b (2F-1), a temperature-sensing electrode lead b through-hole (2F-1b) is formed on the temperature-sensing electrode lead b (2F-1), a heating electrode through-hole (3F-2) is formed on the heating electrode b (3F-1), and a heating electrode lead b through-hole (3F-1b) is formed on the heating electrode lead b (3F-1a). The temperature-sensing electrode b (2F-1) is electrically connected to the temperature-sensing electrode lead b (2F-1a), and the heating electrode b (3F-1) is electrically connected to the heating electrode lead b (3F-1a). 3F-1a) Electrical connection; and make the center line of the through hole (2Z-2) of the temperature sensing electrode a, the center line of the through hole (1-1) of the electrode a, and the center line of the through hole (2F-2) of the temperature sensing electrode b, the center line of the through hole (3Z-2) of the heating electrode a, the center line of the through hole (1-2) of the electrode b, and the center line of the through hole (3F-2) of the heating electrode b, the center line of the through hole (2Z-1b) of the temperature sensing electrode lead a, the center line of the through hole (1-3) of the lead-out through hole, the center line of the through hole (3Z-1b) of the heating electrode lead a, the center line of the through hole (1-5) of the lead-out through hole, the center line of the through hole (1-4) of the temperature sensing electrode lead b, the center line of the through hole (2F-1b) of the temperature sensing electrode lead b, and the center line of the through hole (1-6) of the lead-out through hole (3F-1b) of the heating electrode lead b; Step 3: An insulating protective layer a (2) is prepared on the upper surface of the temperature sensing electrode a (2Z-1), temperature sensing electrode lead a (2Z-1a), heating electrode a (3Z-1), and heating electrode lead a (3Z-1a) using a screen printing method. At the same time, an insulating protective layer b (3) is prepared on the lower surface of the temperature sensing electrode b (2F-1), temperature sensing electrode lead b (2F-1a), heating electrode b (3F-1), and heating electrode lead b (3F-1a). Finally, the electrode is sintered and fixed at a temperature of 750~800℃ to obtain a radiation-resistant high-temperature and high-pressure thermal flow sensor.

3. The method for preparing a radiation-resistant, high-temperature, and high-pressure thermal flow sensor according to claim 2, characterized in that... The first, second, third, and fourth ceramic green ceramic belts mentioned in step one are all alumina or silicon nitride doped with rare earth elements. The preparation steps of the alumina doped with rare earth elements are as follows: Step 1: Add isopropanol to water and stir at 300 rpm for 10 minutes at room temperature to obtain an isopropanol solution; Step 2: Heat aluminum isopropoxide to 140℃ until completely melted, then cool to 55℃, add isopropanol, and stir for 10 min at 50℃ and 150 rpm; then add the isopropanol solution from Step 1 at 5 mL / min using a peristaltic pump at 50℃, and continue stirring for 1 h at 350 rpm; then add water at 5 mL / min using a peristaltic pump, and continue stirring for 1 h at 50℃; after stirring, dry at 85℃ for 12 h. Step 3: Dope the dried product from Step 2 with cerium oxide powder, the doping amount of cerium oxide powder is 1~5%; use 0.65mm alumina beads and aluminum hydroxide solution for wet ball milling until d50=9um, d90=22um, the mass ratio of aluminum hydroxide to water in the aluminum hydroxide solution is 1:10, then filter to obtain aluminum hydroxide slurry; then spray granulate the aluminum hydroxide slurry to obtain microparticles with a diameter of 9um, the outlet temperature is 100℃, and finally the temperature is raised to 1170℃ at a rate of 300℃ / h, and calcined at 1170℃ for 3h to obtain alumina doped with rare earth elements.

4. The method for preparing a radiation-resistant, high-temperature, and high-pressure thermal flow sensor according to claim 2, characterized in that... In step one, electrode vias a (1-1), b (1-2), a (1-3), b (1-4), c (1-5), and d (1-6) are all opened by mechanical drilling. Platinum slurry is filled into electrode vias a (1-1), b (1-2), a (1-3), b (1-4), c (1-5), and d (1-6) using a hot air adsorption filling process. In step one, the thickness of the ceramic substrate (1) is 0.8~1.6mm; In step two, the temperature sensing electrode a (2Z-1), heating electrode a (3Z-1), temperature sensing electrode b (2F-1), and heating electrode b (3F-1) are prepared by screen printing, and the temperature sensing electrode lead a (2Z-1a), heating electrode lead a (3Z-1a), temperature sensing electrode lead b (2F-1a), and heating electrode lead b (3F-1a) are prepared by magnetron sputtering.

5. The method for preparing a radiation-resistant, high-temperature, and high-pressure thermal flow sensor according to claim 2, characterized in that... In step three, an insulating protective layer a (2) is prepared on the upper surface of the temperature sensing electrode a (2Z-1), temperature sensing electrode lead a (2Z-1a), heating electrode a (3Z-1), and heating electrode lead a (3Z-1a) using a screen printing method. At the same time, an insulating protective layer b (3) is prepared on the lower surface of the temperature sensing electrode b (2F-1), temperature sensing electrode lead b (2F-1a), heating electrode b (3F-1), and heating electrode lead b (3F-1a). The specific steps are as follows: Step a: The upper surfaces of the temperature sensing electrode a (2Z-1), temperature sensing electrode lead a (2Z-1a), heating electrode a (3Z-1) and heating electrode lead a (3Z-1a), as well as the lower surfaces of the temperature sensing electrode b (2F-1), temperature sensing electrode lead b (2F-1a), heating electrode b (3F-1) and heating electrode lead b (3F-1a), are sequentially subjected to preheating treatment, roughening treatment and purification treatment; Step b: Using plasma spraying, Al2O3-TiO2 powder is used as the spraying material and plasma jet is used as the heat source. The ceramic powder is heated to a molten state and sprayed onto the upper surface of the temperature sensing electrode a (2Z-1), temperature sensing electrode lead a (2Z-1a), heating electrode a (3Z-1) and heating electrode lead a (3Z-1a), as well as the lower surface of the temperature sensing electrode b (2F-1), temperature sensing electrode lead b (2F-1a), heating electrode b (3F-1) and heating electrode lead b (3F-1a). After deformation, spreading and deposition processes, insulating protective layer a (2) and insulating protective layer b (3) are prepared.

6. The method for preparing a radiation-resistant, high-temperature, and high-pressure thermal flow sensor according to claim 2, characterized in that... The temperature sensing electrode a (2Z-1), heating electrode a (3Z-1), temperature sensing electrode b (2F-1), and heating electrode b (3F-1) are all Pt, Au, or Ag.

7. The method for preparing a radiation-resistant, high-temperature, and high-pressure thermal flow sensor according to claim 2, characterized in that... The thicknesses of the first, second, third, and fourth ceramic green porcelain strips are (110~130) μm, (190~210) μm, (110~130) μm, and (190~210) μm, respectively. The side with the directional markings on the first, second, third, and fourth ceramic green porcelain strips is the front side, and the other side is the back side.

8. The method for preparing a radiation-resistant, high-temperature, and high-pressure thermal flow sensor according to claim 2, characterized in that... The temperature sensing electrode lead a (2Z-1a), heating electrode lead a (3Z-1a), temperature sensing electrode lead b (2F-1a), and heating electrode lead b (3F-1a) are all made of Pt, and the sintering temperature of the temperature sensing electrode, heating electrode, and leads is 1300~1450℃.

9. The method for preparing a radiation-resistant, high-temperature, and high-pressure thermal flow sensor according to claim 2, characterized in that... The insulating protective layer a (2) and the insulating protective layer b (3) are both nano-alumina with a thickness of 0.01~0.05mm and a sintering temperature of 700~1100℃.

10. The method for preparing a radiation-resistant, high-temperature, and high-pressure thermal flow sensor according to claim 2, characterized in that... The width of the temperature sensing electrode and the heating electrode is 0.1~0.5mm, the line spacing is 0.1~1mm, and the resistance value at room temperature is 200Ω±20Ω.

Images