A photothermal conversion eutectic material and its preparation method and application

Abstract

The present invention belongs to the technical field of photothermal conversion materials and specifically discloses a photothermal conversion eutectic material, its preparation method, and application. The photothermal conversion eutectic material includes an electron donor and an electron acceptor. The electron donor is an aromatic vinyl compound containing a D-π-A system, which is combined with the electron acceptor to form a photothermal conversion eutectic material. The material has excellent photothermal conversion performance, an absorption band of up to 220-2000nm, and can effectively utilize light across a wide wavelength range. It also has a high photothermal conversion efficiency, particularly a near-infrared photothermal conversion efficiency of up to 90.04%. The photothermal conversion eutectic material of the present invention can be prepared by a simple solvent volatilization or solid-phase grinding process, without the need for strict condition control, making it suitable for widespread promotion and use. It has good application prospects in photothermal imaging, photoacoustic imaging, seawater desalination, shape memory devices, photothermal-electric devices, photothermal deicing, and photothermal therapy equipment.

Description

Technical Field

[0001] The present invention belongs to the technical field of photothermal conversion materials, and specifically relates to a photothermal conversion eutectic material and a preparation method and application thereof. Background Art

[0002] Solar energy is widely recognized as a clean energy source, and photothermal conversion materials can absorb solar energy and convert it into heat, providing a simple and efficient way to utilize solar energy. Currently, photothermal conversion materials have demonstrated tremendous application potential in numerous fields, including photothermal imaging, photoacoustic imaging, seawater desalination, crude oil adsorption, shape memory devices, photo-thermal-electric devices, and photothermal deicing (Angew. Chem. Int. Ed. 2018, 57, 3963–3967, Chem. Eng. J. 2021, 421, 127772). Compared to inorganic photothermal conversion materials such as metallic, carbonyl, and semiconductor materials, organic photothermal conversion materials have rapidly developed in recent years due to their easily controllable optical properties. Key types include porphyrin compounds, indocyanine green derivatives, organic free radicals, and conjugated organic semiconductor polymers (e.g., polyaniline and polypyrrole) (Nat. Mater. 2011, 10, 324–332). The performance of organic photothermal conversion materials depends not only on the structure of the organic molecules but also on the nature and strength of intermolecular interactions. To improve the photothermal performance of organic materials, research is usually conducted from two aspects: one is to increase the near-infrared (NIR) absorption capacity by extending the molecular conjugation length or covalently linking electron donor and electron acceptor fragments, and the other is to inhibit the radiative transition process by enhancing the quenching effect or increasing the free radical concentration (J.Am.Chem.Soc.2017,139,1921–1927). However, there are still some obstacles that inhibit the development of organic photothermal materials, such as complex molecular design and cumbersome preparation routes. Some researchers have designed new photothermal conversion materials by constructing metal-organic frameworks, covalent organic frameworks and nanocrystals (J.Mater.Chem.B,201,9,7909–7926). These works provide new ideas for the development of high-performance photothermal conversion materials, but these new materials have disadvantages such as high cost or low photothermal conversion efficiency. With the development of organic charge transfer eutectic engineering, organic eutectics were first used in the field of near-infrared photothermal conversion in 2018 (Angew. Chem. Int. Ed, 2018, 57, 3963–3967). Unlike the traditional chemical synthesis route of organic materials, organic eutectics utilize intermolecular non-covalent interactions, such as hydrogen bonds, halogen bonds, π-π stacking interactions, P-π interactions, CH…π interactions and charge transfer, to obtain molecular donor-acceptor units through simple self-assembly, avoiding the harsh experimental conditions required in traditional chemical bond synthesis.

[0003] Currently, organic eutectics used for photothermal conversion primarily include non-ionic binary eutectics and ionic binary eutectics. Among these non-ionic binary eutectics, for example, the DBTTF-TCNB eutectic exhibits a photothermal conversion efficiency of 18.8% under 808nm near-infrared light (Angew. Chem. Int. Ed, 2018, 57, 3963–3967), while pyrene-TCNE and pyrene-TCNQ eutectics exhibit photothermal conversion efficiencies of 80.9% and 83.3%, respectively, under 808nm light (ACS Appl. Mater. Interfaces 2022, 14, 28781-28791). Furthermore, the TMPD-PMDA eutectic exhibits a photothermal conversion efficiency of 87.2% under 808nm light (J. Phys. Chem. Lett. 2021, 12, 5796-5801). Perylene-TCNQ eutectic has a photothermal conversion efficiency of 42% under 1064nm light irradiation (J.Phys.Chem.C 2021,125,25462-25469). Ionic binary eutectic, such as Py-BPy ·+ -COF cocrystal has a photothermal conversion efficiency of 63.8% at 808 nm (Angew. Chem. Int. Ed. 2022, e202202571); TMB-ABTS +· -H2O eutectic has a photothermal conversion efficiency of 49.6% under 1064nm light irradiation (Angew.Chem.Int.Ed.2022,e202202571), Zr-PDI ·- The photothermal conversion efficiency of the cocrystal under 1064nm light irradiation is 52.3% (Angew. Chem. 2021, 133, 8238–8244).

[0004] Currently, excellent photothermal conversion eutectics, especially those with photothermal conversion efficiencies exceeding 85%, are extremely rare. For example, the TMPD-PMDA eutectic achieves a photothermal conversion efficiency of approximately 87.2% under 808nm light irradiation (J. Phys. Chem. Lett. 2021, 12, 5796-5801), and the ACAT-CD eutectic complex achieves a photothermal conversion efficiency of approximately 92.2% under 750nm light irradiation (CCS Chemistry 2020, 3, 2520-2529). Therefore, there is an urgent need to explore new donor and acceptor molecules and develop new high-performance photothermal conversion eutectics to meet the growing demand for photothermal applications. Summary of the Invention

[0005] The present invention aims to address at least one of the technical problems existing in the aforementioned prior art. To this end, the present invention provides a photothermal conversion eutectic material, its preparation method, and its application. This photothermal conversion eutectic material utilizes an aryl vinyl compound containing a D-π-A system as an electron donor, which forms a charge transfer complex with an electron acceptor and self-assembles to form a eutectic, exhibiting excellent photothermal conversion performance.

[0006] In order to solve the above technical problems, the first aspect of the present invention provides a photothermal conversion eutectic material, including an electron donor and an electron acceptor, wherein the electron donor is an aromatic vinyl compound containing a D-π-A system, which is combined with the electron acceptor to form the photothermal conversion eutectic material.

[0007] Preferably, the aromatic vinyl compound includes at least one of 4-(4-diethylaminophenylvinyl)-1-methylpyridinium iodide (D289), trans-4-[4-(dimethylamino)phenylvinyl]-1-methylpyridinium iodide (D2M), and trans-4-[4-(dibutylamino)phenylvinyl]-1-methylpyridinium iodide (D2B).

[0008] Preferably, the electron acceptor comprises 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone (F4TCNQ).

[0009] Specifically, the photothermal conversion eutectic material of the present invention uses an aromatic vinyl compound (such as D289, D2M, D2B) containing a D-π-A system and having an aggregation-induced self-quenching effect as an electron donor, wherein SP 3 The nitrogen of the hybridized diethylamino group acts as a strong electron-donating group; F4TCNQ, which contains a strong electron-withdrawing group, serves as an electron acceptor. When these electron donors and acceptors combine, electrons delocalize from the donor to the acceptor, forming a charge transfer (CT) state. This broadens the system's absorption spectrum, enabling more efficient utilization of light across a wider wavelength range. When the molecules are aligned to form a cocrystal through non-covalent bonding forces, this CT complex primarily releases absorbed light energy through non-radiative transitions such as internal conversion or vibrational relaxation, effectively converting it into heat, thereby improving its efficiency.

[0010] Preferably, the molar ratio of the electron donor to the electron acceptor is (1-2):1.

[0011] The second aspect of the present invention provides a method for preparing a photothermal conversion eutectic material, which is used to prepare the photothermal conversion eutectic material described in the first aspect of the present invention, and includes a solvent volatilization method or a solid phase grinding method.

[0012] As a further improvement of the above scheme, the solvent volatilization method includes the following steps:

[0013] (1) dissolving an electron donor and an electron acceptor in solvent A and solvent B, respectively, to obtain an electron donor solution and an electron acceptor solution;

[0014] (2) The electron donor solution and the electron acceptor solution are mixed, subjected to microwave-assisted volatilization, and then volatilized to obtain the photothermal conversion eutectic material.

[0015] Specifically, after the electron donor solution and the electron acceptor solution are evenly mixed, a black intermolecular charge transfer complex is generated.

[0016] Preferably, the solvent A and the solvent B are both low-boiling-point solvents.

[0017] More preferably, the solvent A is acetonitrile, and the solvent B is dichloromethane.

[0018] (1) Preferably, the concentration of the electron donor solution is 9.2×10 -4 -9.4×10 -4 g / mL.

[0019] (2) Preferably, the concentration of the electron acceptor solution is 1.38×10 -3 g / mL.

[0020] Preferably, in step (1), ultrasonic oscillation is used to completely dissolve the solution during the dissolution, and the ultrasonic oscillation time is 5-6 minutes.

[0021] Preferably, in step (2), the microwave-assisted reaction time is 25-35 minutes to accelerate the movement of molecules and the volatilization of the solvent.

[0022] Preferably, in step (2), the static volatilization time is 3-4 days.

[0023] As a further improvement of the above scheme, the solid phase grinding method comprises the following steps:

[0024] The electron donor and the electron acceptor are mixed and then ground to obtain the photothermal conversion eutectic material.

[0025] Specifically, after the solids of the electron donor and the electron acceptor are mixed, the two components contact each other to form an electron donor-electron acceptor intermolecular charge transfer complex; during the grinding process, the contact between the two components is more sufficient, which can promote the intermolecular charge transfer complex to self-assemble in an orderly manner in the form of lowest energy to form a eutectic.

[0026] Preferably, the grinding time is more than 1 hour; more preferably, the grinding time is 1-2 hours.

[0027] The third aspect of the present invention provides an application of the photothermal conversion eutectic material described in the first aspect of the present invention.

[0028] Preferably, the applications include photothermal imaging, photoacoustic imaging, seawater desalination, crude oil adsorption, shape memory devices, photo-thermal-electric devices, photothermal deicing or photothermal therapy equipment.

[0029] Compared with the prior art, the above technical solution of the present invention has at least the following technical effects or advantages:

[0030] (1) The photothermal conversion eutectic material of the present invention uses an aromatic vinyl compound containing a D-π-A system and having an aggregation-induced self-quenching effect as an electron donor, and forms a complete charge transfer complex with an electron acceptor component and self-assembles to form a eutectic. It has excellent photothermal conversion performance, an absorption band of up to 220-2000nm, and can effectively utilize light in a wide band; at the same time, it has a high photothermal conversion efficiency, especially a near-infrared photothermal conversion efficiency of up to 90.04%. The excellent photothermal conversion performance of the photothermal conversion eutectic material of the present invention is closely related to the aggregation-induced self-quenching effect of this type of compound itself, the complete charge transfer complex formed by this type of compound and the electron acceptor component, and the structure formed by the directional arrangement of this complex.

[0031] (2) The photothermal conversion eutectic material of the present invention can be prepared by a simple solvent evaporation or solid phase grinding process without the need for strict condition control, and is suitable for wide promotion and use.

[0032] (3) The photothermal conversion eutectic material of the present invention is composed of organic small molecules, and the preparation conditions are mild and simple, and the cost is low. Therefore, it has good application prospects in photothermal imaging, photoacoustic imaging, seawater desalination, shape memory devices, photo-thermal-electric devices, photothermal deicing, and photothermal treatment equipment. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 Schematic diagram of the process for preparing photothermal conversion eutectic material by solvent evaporation method adopted in an embodiment of the present invention;

[0034] Figure 2 Schematic diagram of the process for preparing photothermal conversion eutectic material by solid phase grinding method adopted in an embodiment of the present invention;

[0035] Figure 3 The structural formula and electrostatic potential distribution diagram of the electron donor D289 and the electron acceptor F4TCNQ;

[0036] Figure 4 This is the PXRD spectrum of the photothermal conversion eutectic material prepared in Example 1-2;

[0037] Figure 5This is the PXRD spectrum of the photothermal conversion eutectic material prepared in Example 3-5;

[0038] Figure 6 This is a crystal structure analysis diagram of the photothermal conversion eutectic material prepared in Example 1;

[0039] Figure 7 This is the UV-visible-near-infrared absorption spectrum of the photothermal conversion eutectic material prepared in Example 1;

[0040] Figure 8 This is a diagram showing the photothermal conversion experimental results of the photothermal conversion eutectic material prepared in Example 1;

[0041] Figure 9 This is a diagram showing the ultrafast spectrum experimental results of the photothermal conversion eutectic material prepared in Example 1;

[0042] Figure 10 This is a graph showing the experimental results of the temperature rise within 600s of the photothermal conversion of the photothermal conversion eutectic material prepared in Example 3-5. DETAILED DESCRIPTION

[0043] The present invention is described in detail below with reference to the examples to facilitate understanding of the present invention by those skilled in the art. It is necessary to point out that the examples are only used to further illustrate the present invention and are not to be construed as limiting the scope of protection of the present invention. Non-essential improvements and adjustments made to the present invention by those skilled in the art based on the above-mentioned invention should still fall within the scope of protection of the present invention. At the same time, the raw materials mentioned below that are not described in detail are all commercially available products; the process steps or preparation methods that are not mentioned in detail are all process steps or preparation methods known to those skilled in the art.

[0044] The process diagrams of preparing the photothermal conversion eutectic material by the solvent evaporation method and the solid phase grinding method used in the embodiment of the present invention are as follows: Figure 1 and Figure 2 shown.

[0045] Example 1

[0046] The method for preparing a photothermal conversion eutectic material by a solvent volatilization method comprises the following steps:

[0047] (1) Weigh 11.83 mg of D289 solid into a 20 mL transparent screw-capped glass bottle, add approximately 12 mL of acetonitrile, and sonicate at room temperature for 5 minutes to fully dissolve the D289 solid to obtain a D289 solution;

[0048] (2) Weigh 4.14 mg of F4TCNQ solid and place it in a 20 mL transparent screw-capped glass bottle. Add 3 mL of dichloromethane and sonicate at room temperature for 5 minutes to fully dissolve the F4TCNQ solid to obtain a F4TCNQ solution.

[0049] (3) uniformly mixing the D289 solution prepared in step (1) and the F4TCNQ solution prepared in step (2) to generate a black intermolecular charge transfer complex;

[0050] (4) The intermolecular charge transfer complex prepared in step (3) was microwaved at low temperature for 30-40 minutes in a microwave oven to accelerate molecular motion and solvent volatilization; the bottle mouth was then sealed with a sealing film, and a small hole was punched in the sealing film. After standing still for 2 days, the photothermal conversion eutectic material of this embodiment was precipitated.

[0051] Example 2

[0052] The method for preparing a photothermal conversion eutectic material by a solvent volatilization method comprises the following steps:

[0053] (1) Weigh 10.99 mg of D2M solid and place it in a 20 mL transparent screw-capped glass bottle. Add about 12 mL of acetonitrile and sonicate at room temperature for 5 minutes to fully dissolve the D2M solid to obtain a D2M solution.

[0054] (2) Weigh 4.14 mg of F4TCNQ solid and place it in a 20 mL transparent screw-capped glass bottle. Add 3 mL of dichloromethane and sonicate at room temperature for 5 minutes to fully dissolve the F4TCNQ solid to obtain a F4TCNQ solution.

[0055] (3) uniformly mixing the D2M solution prepared in step (1) and the F4TCNQ solution prepared in step (2) to generate a black intermolecular charge transfer complex;

[0056] (4) The intermolecular charge transfer complex prepared in step (3) was microwaved at low temperature for 30-40 minutes in a microwave oven to accelerate molecular motion and solvent volatilization; the bottle mouth was then sealed with a sealing film, and a small hole was punched in the sealing film. After standing still for 2 days, the photothermal conversion eutectic material of this embodiment was precipitated.

[0057] Example 3

[0058] A method for preparing a photothermal conversion eutectic material by solid phase grinding comprises the following steps:

[0059] (1) Weigh 118.29 mg of D289 solid and 82.85 mg of F4TCNQ solid respectively, and mix the two solids to form an intermolecular charge transfer complex;

[0060] (2) The intermolecular charge transfer complex prepared in step (1) was transferred to a grinder and subjected to pressure grinding for 1 hour to obtain the photothermal conversion eutectic material of this embodiment.

[0061] Example 4

[0062] A method for preparing a photothermal conversion eutectic material by solid phase grinding comprises the following steps:

[0063] (1) Weigh 109.88 mg of D2M solid and 82.85 mg of F4TCNQ solid respectively, and mix the two solids to form an intermolecular charge transfer complex;

[0064] (2) The intermolecular charge transfer complex prepared in step (1) was transferred to a grinder and subjected to pressure grinding for 1 hour to obtain the photothermal conversion eutectic material of this embodiment.

[0065] Example 5

[0066] A method for preparing a photothermal conversion eutectic material by solid phase grinding comprises the following steps:

[0067] (3) Weigh 135.14 mg of D2B solid and 82.85 mg of F4TCNQ solid respectively, and mix the two solids to form an intermolecular charge transfer complex;

[0068] (4) The intermolecular charge transfer complex prepared in step (1) was transferred to a grinder and subjected to pressure grinding for 1 hour to obtain the photothermal conversion eutectic material of this embodiment.

[0069] Performance Testing

[0070] 1. Structural formula and electrostatic potential

[0071] The structural formula and electrostatic potential of the electron donor D289 and the electron acceptor F4TCNQ used in the present invention were observed, and the results are as follows: Figure 3 As shown. Figure 3 It can be seen that the electron donor D289 is an aromatic vinyl compound containing a D-π-A system and having an aggregation-induced self-quenching effect, in which SP 3 The nitrogen of the hybridized diethylamino group is a strong electron-pushing group; the electron acceptor F4TCNQ contains a strong electron-withdrawing group. When the above-mentioned electron donor and acceptor combine, electrons can be delocalized from the donor to the acceptor, and the two form a charge transfer (CT) state, thereby broadening the absorption spectrum of the system, thereby enabling more effective utilization of light in a wider band; and when the CT complex is oriented to form a eutectic through intermolecular non-covalent bond forces, it can mainly release the absorbed light energy in the form of non-radiative transitions such as internal conversion or vibrational relaxation, that is, it can effectively carry out photothermal conversion.

[0072] 2. PXRD analysis

[0073] Figure 4(a) and (b) are the PXRD spectra of the photothermal conversion eutectic material prepared by the solvent evaporation method in Example 1-2, respectively. In the figure, the horizontal axis 2θ (degree) represents the angle, and the vertical axis Intensity represents the peak intensity. Figure 4 It can be seen that the photothermal conversion eutectic materials prepared by solvent evaporation have sharp and clear X-ray diffraction peaks, indicating that the material is a long-range ordered, anisotropic crystal with a good degree of crystallinity.

[0074] Figure 5 (a), (b) and (c) are the PXRD spectra of the photothermal conversion eutectic material prepared by the solid phase grinding method in Example 3-5, respectively. Figure 5 It can be seen that the photothermal conversion eutectic material prepared by the solid-phase grinding process is only slightly different from the eutectic material prepared by the solvent volatilization process in crystal morphology, size, and growth orientation, but the crystal structure, that is, the specific arrangement or stacking form of the molecules, has not changed.

[0075] 3. Crystal structure analysis

[0076] Figure 6 Schematic diagram of the crystal structure of the photothermal conversion eutectic material prepared in Example 1 and the intermolecular non-covalent bond interactions within it. Figure 6 (a), (b) and (c) respectively show the molecular arrangement, intermolecular hydrogen bonding, π-π stacking and other intermolecular non-covalent bond interactions in the D289-F4TCNQ eutectic material, and the molecular stacking mode. Figure 6 It can be seen that the D289-F4TCNQ eutectic material is composed of the electron donor D289 and the electron acceptor F4TCNQ in a directional arrangement.

[0077] 4. Photothermal conversion efficiency

[0078] The photothermal conversion efficiency of the photothermal conversion eutectic material sample prepared in Example 3 was measured using the method reported in the reference (J. Phys. Chem. C 2021, 125, 25462-25469, Angew. Chem. Int. Ed., 2018, 57, 3963–3967). 49.2 mg of the photothermal conversion eutectic material D289-F4TCNQ prepared in Example 3 was weighed and evenly filled into a quartz device with a groove [1.4 × 1.4 × 0.3 cm -3 The square quartz device (consists of a 1.4×1.4×0.3cm -3 A quartz cover and a 1.0 × 1.0 × 0.05 cm -3The quartz device is then irradiated with an 808 nm laser and the temperature change is recorded in real time using a Lianshang SIN-AL-10 infrared temperature sensor. -2 Under irradiation with a near-infrared laser of 808 nm, the temperature can be raised to approximately 82.96±3.25°C within 600 seconds. After the photothermal conversion measurement, the absorption intensity of the sample in the quartz device was tested to ensure that the sample thickness was consistent during the photothermal reaction and UV / VIS / NIR absorption spectrum measurement. This allows for accurate measurement of the absorption intensity used to calculate the photothermal conversion efficiency. The photothermal conversion efficiency of this photothermal conversion eutectic material was calculated from the cooling curve to be 87.0±1.4%, the highest value reported to date. The photothermal conversion efficiencies of other photothermal conversion eutectic materials are shown in Table 1.

[0079] Table 1: Photothermal conversion efficiency of some photothermal conversion eutectic materials

[0080] Material Type Photothermal conversion efficiency Organic cocrystal containing TMPD (TMPD-PMDA) (808nm) 87.20％ Organic cocrystal containing pyrene (pyrene-TCNE) (1064nm) 80.90％ Organic cocrystal containing pyrene (pyrene-TCNQ) (1064nm) 83.30％ Organic cocrystal containing perylene (perylene-TCNQ) (1064nm) 42.00％ Organic cocrystal containing DBTTF (DBTTF-TCNB) (808nm) 18.80％ <![CDATA[MB-ABTS +· -H2O eutectic (1064nm) 49.60％ <![CDATA[Perylene diimide-based metal-organic framework material (Zr-PDI ·- )(1064nm)]]> 52.30％ <![CDATA[Covalent Organic Framework (PyBPy +· )(808nm)]]> 63.80％

[0081] 5. Photothermal conversion performance

[0082] Figure 7 The UV-visible-near infrared absorption spectrum of the photothermal conversion eutectic material prepared in Example 1 is compared with the absorption spectra of D289 and F4TCNQ. In the figure, the horizontal axis Wavelength represents the wavelength, and the vertical axis Normalized intensity represents the normalized intensity. Figure 7 It can be seen that after the electron donor D289 and the electron acceptor F4TCNQ form a eutectic structure, the absorption spectrum of the eutectic material expands to 220-2000nm; compared with the individual D289 and F4TCNQ, the charge transfer degree of the eutectic is greater and the excited state electron transition energy level becomes narrower and denser, that is, the eutectic material can effectively utilize a wide range of light.

[0083] The photothermal conversion eutectic material of D289-F4TCNQ in Example 1 was subjected to 15 heating-cooling cycle tests. The results are as follows: Figure 8 As shown, Figure 8 (a) is the heating-cooling process diagram, (b) is the cyclic heating-cooling experiment result diagram, (c) is the heating-cooling result diagram of different light powers, (d) is the temperature change (△T)-incident light power (Power) linear fitting diagram; in the figure, the horizontal axis Time represents time, and the vertical axis Temperature represents temperature. Figure 8It can be seen that good photothermal conversion stability was maintained during 15 heating-cooling cycles, and the temperature rise showed a good linear relationship with the power of the incident laser, that is, the temperature of the photothermal conversion eutectic material can be accurately controlled by controlling the power of the incident light.

[0084] Figure 9 This is the result of the ultrafast spectrum experiment of the photothermal conversion eutectic material prepared in Example 1. Figure 9 (a) and (b) are the femtosecond transient absorption spectra of the eutectic material, (c) is the kinetic fitting result diagram, and (d) is a schematic diagram of the excitation and relaxation paths of the eutectic material. In the figure, the horizontal axis Wavelength represents the wavelength, the Delay time represents the delay time, and the vertical axis △OD represents the change in optical density. Figure 9 It can be seen that after absorbing light excitation, the eutectic material can decay rapidly within 2.34ps. Kinetic results show that this process accounts for 61.2% of the total relaxation process. This indicates that after being excited, the eutectic material can quickly release energy and relax to the ground state, mainly in the form of non-radiative transitions. During this process, light energy is effectively converted into heat energy, which gives the eutectic material excellent light-to-heat conversion efficiency.

[0085] The photothermal conversion performance of the photothermal conversion eutectic materials prepared in Examples 3-5 was tested under the conditions of a power density of 0.69 w / cm -2 Under 808nm infrared light irradiation, the results are as follows Figure 10 As shown in the figure, the horizontal axis Time represents time, and the vertical axis Temperature represents temperature. Figure 10 It can be seen that these photothermal eutectic materials containing D-π-A can be rapidly heated to approximately 82.96±3.25℃, 79.33±3.25℃ and 71±3.25℃ respectively within 600 seconds, showing excellent photothermal conversion performance.

[0086] For those skilled in the art to which the present invention belongs, a number of simple deductions or substitutions can be made without departing from the concept of the present invention, without having to resort to creative work. Therefore, based on the disclosure of the present invention, simple improvements made by those skilled in the art to the present invention should be within the scope of protection of the present invention. The above embodiments are preferred embodiments of the present invention, and all processes similar to the present invention and equivalent changes made should fall within the scope of protection of the present invention.

Claims

1. A photothermal conversion eutectic material, characterized in that: It includes an electron donor and an electron acceptor, wherein the electron donor is an aryl vinyl compound containing a D-π-A system, and is combined with the electron acceptor to form the photothermal conversion eutectic material; The electron donor is selected from at least one of 4-(4-diethylaminophenylvinyl)-1-methylpyridinium iodide, trans-4-[4-(dimethylamino)phenylvinyl]-1-methylpyridinium iodide, and trans-4-[4-(dibutylamino)phenylvinyl]-1-methylpyridinium iodide; The electron acceptor is selected from 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone.

2. The photothermal conversion eutectic material according to claim 1, characterized in that The molar ratio of the electron donor to the electron acceptor is (1-2):

1.

3. A method for preparing a photothermal conversion eutectic material, characterized in that: The preparation method is used to prepare the photothermal conversion eutectic material according to any one of claims 1 to 2, and is selected from a solvent volatilization method or a solid phase grinding method.

4. The method for preparing the photothermal conversion eutectic material according to claim 3, characterized in that: The solvent volatilization method comprises the following steps: (1) dissolving an electron donor and an electron acceptor in solvent A and solvent B, respectively, to obtain an electron donor solution and an electron acceptor solution; (2) The electron donor solution and the electron acceptor solution are mixed, subjected to microwave-assisted volatilization, and then volatilized to obtain the photothermal conversion eutectic material.

5. The method for preparing the photothermal conversion eutectic material according to claim 4, characterized in that: The solvent A is acetonitrile, and the solvent B is dichloromethane.

6. The method for preparing the photothermal conversion eutectic material according to claim 3, characterized in that: The solid phase grinding method comprises the following steps: The electron donor and the electron acceptor are mixed and then ground to obtain the photothermal conversion eutectic material.

7. The method for preparing the photothermal conversion eutectic material according to claim 6, characterized in that: The grinding time is more than 1 hour.

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