Gas inlet device for semiconductor deposition apparatus, gas inlet method, and substrate processing apparatus

Abstract

The application provides a gas inlet device of semiconductor deposition equipment, a gas inlet method and a substrate processing device. The gas inlet device comprises a mixing pipeline, a mixer and a diffuser. The pipeline is fluidly connected to the mixer. A valve is arranged on the pipeline and used for controlling the process gas. The process gas mixed by the mixer is introduced into the diffuser and then flows into a reactor. The mixer has an inner cavity, a first end portion and a second end portion arranged oppositely. A gas passage is arranged on the sidewall of the mixer and used for inputting the process gas required by the reactor. The second end portion is provided with a gas outlet which is fluidly connected to the reactor. A flow guide portion is arranged in the inner cavity and extends from the first end portion to the second end portion. The outer wall of the flow guide portion is provided with a convex portion. The inner wall of the inner cavity is provided with a groove, so that the gas in the inner cavity forms a turbulent flow. The mixer of the application can further be provided with fin-shaped protruding structures which are arranged on the spiral convex portion of the inner cavity at intervals, so that a local turbulent flow is formed in the spiral passage and the gas mixing effect is improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a gas inlet device, a gas mixing method, and a substrate processing device for a semiconductor deposition apparatus. Background Technology

[0002] Gas mixing is one of the core technologies in semiconductor manufacturing processes during thin-film deposition. To ensure that the reactive gases (such as precursors, hydrogen, ammonia, water vapor, etc.) are fully mixed and uniformly cover the entire substrate to improve film uniformity, a certain amount of inert gas (also known as carrier gas) is typically introduced when the reactive gases enter the reactor chamber. This allows the reactive gases to diffuse rapidly to the substrate surface. Ensuring thorough mixing of the reactive and carrier gases before they enter the reaction chamber is crucial for improving substrate film uniformity. Therefore, the gas inlet device of the deposition equipment reactor is usually equipped with a mixer to mix the reactive and carrier gases, and a diffuser or diffusion chamber is used to diffuse the mixed gas before it is introduced into the reaction chamber to process the substrate.

[0003] In existing deposition equipment, mixers with good mixing performance use spiral channels for gas mixing. However, due to the shape and length of the channels in spiral channel gas mixers, they cannot be manufactured in one go. They usually need to be processed into multiple small pieces and then spliced ​​together to form a spiral channel of a certain length. During splicing, the contact surfaces of each small piece require vacuum sealing with O-rings. This design increases the manufacturing difficulty and cost of such gas mixers. Furthermore, the presence of O-rings significantly increases subsequent maintenance costs and has a certain impact on mixer performance. In addition, O-rings cannot withstand high temperatures; under the combined effects of the reactor's high temperature and a certain amount of reactant gas leakage, they will corrode, thus reducing their service life. Summary of the Invention

[0004] The purpose of this invention is to provide an air intake device, an air intake method, and a substrate processing device for a semiconductor deposition equipment. The air intake device for the semiconductor deposition equipment has a simple structure, is easy to process, and improves the performance and service life of the air intake device for the semiconductor deposition equipment.

[0005] To achieve the above objectives, in a first aspect, the present invention provides a gas inlet device for a semiconductor deposition apparatus, used to introduce a gas reaction source into the reactor of the semiconductor deposition apparatus. The gas inlet device includes a pipeline, a mixer, and a diffuser. The pipeline is fluidly connected to the mixer, and a valve is provided on the pipeline for controlling the process gas introduced into the mixer. The mixed process gas in the mixer is introduced into the diffuser, and the diffuser is fluidly connected to the reactor.

[0006] The mixer has an inner cavity, and the mixer further includes a first end and a second end, which are disposed opposite to each other; the cross-sectional area of ​​the inner cavity is the same from the first end to the second end; the second end is provided with a gas outlet, which is in fluid communication with the diffuser;

[0007] The mixer has a gas passage on a side different from the first end and the second end that communicates with the inner cavity. The gas passage is fluidly connected to the pipeline for inputting the first gas and / or the second gas required by the reactor, wherein the first gas / second gas can be a mixed gas.

[0008] The inner cavity is provided with a flow guide section, which extends from the first end to the second end, so that a flow space is formed in the inner cavity. The first gas and / or the second gas entering through the gas channel flow and mix in the flow space and then enter the reactor.

[0009] The outer wall of the flow guide is provided with a spiral protrusion along the extension direction of the flow guide, facing the inner cavity, so that a spiral flow channel is formed in the flow space of the inner cavity; the inner wall of the inner cavity is provided with a spiral groove along the extension direction of the flow guide, and the spiral groove is correspondingly arranged with the protrusion, so that the gas entering the inner cavity flows and mixes spirally in the flow space; there is a gap between the inner cavity and the flow guide, so that the mixed gas entering the inner cavity through the gas channel flows spirally in the flow space while flowing along the extension direction of the flow guide;

[0010] The mixer is made of a material resistant to specific temperatures and corrosion, such as aluminum, aluminum alloy, titanium, ceramic, stainless steel or Hastelloy; and different secondary treatments are selected according to different thin film deposition processes, wherein the secondary treatments are: surface passivation, mechanical treatment or coating.

[0011] In some embodiments, the protrusion is provided with a plurality of fin-shaped protrusions spaced apart.

[0012] Secondly, the present invention provides a gas inlet device for a semiconductor deposition apparatus, used to introduce a gas reaction source into the reactor of the semiconductor deposition apparatus. The gas inlet device includes a pipeline, a mixer, and a diffuser. The pipeline is fluidly connected to the mixer, and a valve is provided on the pipeline for controlling the process gas introduced into the mixer. The mixed process gas in the mixer is then introduced into the diffuser, and the diffuser is fluidly connected to the reactor.

[0013] The mixer has an inner cavity, and the mixer further includes a first end and a second end, which are disposed opposite to each other; the cross-sectional area of ​​the inner cavity is the same from the first end to the second end; the second end is provided with a gas outlet, which is in fluid communication with the diffuser;

[0014] The mixer has a gas passage on a side different from the first end and the second end that communicates with the inner cavity. The gas passage is fluidly connected to the pipeline for inputting the first gas and / or the second gas required by the reactor of the mixer, wherein the first gas / second gas can be a mixed gas.

[0015] The inner cavity is provided with a flow guide section, which extends from the first end to the second end, so that a flow space is formed in the inner cavity. The first gas and / or the second gas entering through the gas channel flows and mixes in the flow space and is then introduced into the reactor.

[0016] The first end is provided with a gas inlet, which is fluidly connected to the inner cavity for introducing a first gas, a second gas, or a third gas;

[0017] The gas inlet extends from the first end to the inner cavity of the mixer, and its extending direction is set at a certain angle to the central axis of the inner cavity;

[0018] The mixer is made of materials that are resistant to specific temperatures and corrosion, such as aluminum, aluminum alloy, titanium, ceramic, stainless steel or Hastelloy; and different secondary treatments are selected according to different thin film deposition processes, wherein the secondary treatments are: surface passivation, mechanical treatment or coating.

[0019] In some embodiments, the gas inlets are provided in two or more, allowing gas to enter the inner cavity of the mixer along different directions or angles; the plurality of gas inlets are staggered at the first end and do not communicate with each other, or the plurality of gas inlets are configured to: surround the first end with the central axis of the inner cavity as the center and extend from the first end to the inner cavity; the plurality of gas inlets may also be configured to: extend from the first end along different sides of the mixer to the inner cavity.

[0020] Thirdly, the present invention provides a gas inlet device for a semiconductor deposition apparatus, used to introduce a gas reaction source into the reactor of the semiconductor deposition apparatus. The gas inlet device includes a pipeline, a mixer, and a diffuser. The pipeline is fluidly connected to the mixer, and a valve is provided on the pipeline for controlling the process gas introduced into the mixer. The mixed process gas in the mixer is then introduced into the diffuser, and the diffuser is fluidly connected to the reactor.

[0021] The mixer has an inner cavity, and the mixer further includes a first end and a second end, which are disposed opposite to each other; the cross-sectional area of ​​the inner cavity is the same from the first end to the second end; the second end is provided with a gas outlet, which is in fluid communication with the reactor;

[0022] The mixer has a gas passage on a side different from the first end and the second end that communicates with the inner cavity. The gas passage is fluidly connected to the pipeline for inputting the first gas and / or the second gas required by the reactor, wherein the first gas / second gas can be a mixed gas.

[0023] The inner cavity is provided with a flow guide section, which extends from the first end to the second end, so that a flow space is formed in the inner cavity. The first gas and / or the second gas entering through the gas channel flow and mix in the flow space and then enter the diffuser.

[0024] The mixer and the guide section are integrally formed and made of high temperature and corrosion resistant materials, such as aluminum, aluminum alloy, titanium, ceramic, stainless steel or Hastelloy alloy; and different secondary treatments are selected according to different thin film deposition processes, wherein the secondary treatments are: surface passivation, mechanical treatment or coating.

[0025] In some embodiments, the guide portion cooperates with the inner cavity to form an annular channel, and the cross-section of the annular channel gradually decreases from the second end toward the first end.

[0026] In some embodiments, the guide portion cooperates with the inner cavity to form an annular channel, and the cross-section of the annular channel gradually increases from the second end toward the first end.

[0027] In some embodiments, the flow guide portion cooperates with the inner cavity to form an annular channel, the cross-section of the annular channel is substantially the same from the first end to the second end, and the shape of the gas channel extending into the inner cavity is teardrop-shaped or polygonal.

[0028] Fourthly, the present invention provides a gas inlet device for a semiconductor deposition apparatus, used to introduce a gas reaction source into the reactor of the semiconductor deposition apparatus. The gas inlet device includes a pipeline, a mixer, and a diffuser. The pipeline is fluidly connected to the mixer, and a valve is provided on the pipeline for controlling the process gas introduced into the mixer. The mixed process gas in the mixer is introduced into the diffuser, and the diffuser is fluidly connected to the reactor.

[0029] The mixer has an inner cavity and includes a first end and a second end, which are disposed opposite to each other. The cross-sectional area of ​​the inner cavity is the same from the first end to the second end. The second end is provided with a gas outlet, which is connected to the reactor.

[0030] The mixer has at least two gas channels on a side different from the first end and the second end, which are connected to the inner cavity. The at least two gas channels are fluidly connected to the pipeline for inputting a first gas, a second gas, and / or a third gas required by the reactor, wherein the first gas, the second gas, or the third gas can be a mixed gas.

[0031] At least two gas channels are provided on different sides of the mixer, and the gas channels are not parallel to the central axis of the mixer cavity. When the gas enters the cavity through the gas channel, it first moves toward the first end, and after flowing and mixing in the cavity, it flows out through the gas outlet.

[0032] The mixer is made of materials that are resistant to specific temperatures and corrosion, such as aluminum, aluminum alloy, titanium, ceramic, stainless steel or Hastelloy; and different secondary treatments are selected according to different thin film deposition processes, such as surface passivation, mechanical treatment or coating.

[0033] Because the mixer of the present invention employs various gas channel designs, it forms multiple different air intake methods, allowing the gas to be mixed in a more efficient manner when entering the inner cavity of the mixer. Furthermore, the inner cavity of the mixer is also provided with a flow guide to enhance gas mixing. The flow guide may also be provided with features such as protrusions, which cooperate with the grooves in the inner cavity of the mixer. Moreover, there is still a gap between the flow guide and the inner cavity, so that the gas can be spirally mixed in the flow space formed in the inner cavity of the mixer while flowing axially along the extension direction of the flow guide. This improves the performance and mixing efficiency of the mixer, thereby improving the efficiency and quality of thin film deposition.

[0034] Furthermore, in the mixer of the present invention, one or more gas inlets may be provided at the first end. These gas inlets are not parallel to the central axis of the inner cavity, so that the gas entering the inner cavity simultaneously possesses both horizontal and vertical flow momentum, allowing for thorough flow and mixing within the flow space formed by the inner cavity of the mixer and the guide section. When two or more gas inlets are provided, they are staggered at the first end and do not communicate with each other; or the multiple gas inlets are configured to surround the first end with the central axis of the inner cavity as the center and extend from the first end to the inner cavity. The multiple gas inlets may also be configured to extend from the first end along different sides of the mixer to the inner cavity, allowing gas to enter the inner cavity of the mixer in different directions or at different angles, thereby achieving annular or spiral mixing flow within the flow space of the inner cavity, further improving the performance and mixing efficiency of the mixer. When the multiple gas inlets serve as purge gas inlets, they can also purge and remove the original reactive gases or precursors from the gas channels and reaction chamber, thereby further improving the quality of the deposited thin film.

[0035] According to another aspect of the invention, the mixer may also omit the flow guide and instead have two or more different gas channels provided on the sidewall of the mixer. These gas channels are not parallel to the central axis of the inner cavity. The gas channels may extend from the second end toward the first end on the sidewall of the mixer. When the first gas and / or the second gas enter the inner cavity through the gas channels, they first move from the second end toward the first end. Since the gas channels are located on different sidewalls of the mixer, the gases entering the mixer through different gas channels intermingle and mix after flowing toward the first end, thereby increasing the gas diffusion distance, making the gas mixing more uniform, and further improving the performance and mixing efficiency of the mixer.

[0036] According to the mixer of the present invention, the main body of the mixer can be integrally formed with the guide section, and is made of a high-temperature resistant and corrosion-resistant material, specifically aluminum, aluminum alloy, titanium, ceramic, stainless steel or Hastelloy, etc.; and different secondary treatments are selected according to different thin film deposition processes, wherein the secondary treatments are: surface passivation, mechanical treatment or coating, etc., to improve the corrosion resistance of the inner cavity of the mixer. Mechanical treatment may include, for example, sandblasting or electropolishing, etc.; thereby changing the roughness of the inner surface of the cavity, further improving the performance and service life of the mixer.

[0037] Fifthly, the present invention provides a method for inlet gas in a semiconductor deposition apparatus, applied to the aforementioned inlet device, the method comprising: controlling different process gases to enter the inner cavity of the mixer through the gas channel by a valve in a pipeline;

[0038] The process gas generates turbulence in the spiral flow channel and local turbulence at the protruding structure, forming a uniform mixed gas.

[0039] The mixed gas is delivered to the diffuser and diffused before entering the reactor.

[0040] One of the beneficial effects of the gas mixing method provided by the present invention is that by using the gas inlet device of the semiconductor deposition equipment provided by the present invention, multiple gases will generate turbulence when flowing through the spiral flow channel, and local turbulence will be generated again at the protruding structure provided on the spiral protrusion. Furthermore, the residence time of the gas in the gas inlet device of the semiconductor deposition equipment can be extended to enhance the mixing effect and further improve the uniformity of gas mixing.

[0041] In a sixth aspect, the present invention provides a substrate processing apparatus, including a diffuser, a reactor, and an inlet device for the semiconductor deposition apparatus described in the present invention, wherein the gas outlet of the mixer is connected to the inlet of the diffuser, the diffuser is used to diffuse the gas mixed by the mixer and is fluidly connected to the gas inlet of the reactor; the gas inlet and gas outlet of the reactor are disposed on opposite sides of the reactor body, such that the gas reaction source introduced into the reactor forms a laminar flow above the wafer in the reactor;

[0042] The seal between the mixer and the diffuser can be a metal-to-metal seal. When the reactor is used for a low-temperature process below 300°C, a sealing ring can also be used to seal the mixer and the diffuser.

[0043] In a seventh aspect, the present invention provides a substrate processing apparatus, including an inlet device of the semiconductor deposition apparatus described in the present invention and a reactor having a spray head structure; the reactor includes an upper chamber cover configured as a gas channel plate, the spray head structure dividing the reactor into a gas diffusion chamber and a reaction chamber, the reactor further includes a lower chamber configured with a wafer tray, and the gas outlet of the mixer is connected to the gas channel plate, so that the gas required by the reactor is mixed in the mixer before being introduced into the reactor;

[0044] The mixer and the gas channel plate are sealed with a sealing ring, and the temperature of the mixer and the gas channel plate does not exceed 300°C. Attached Figure Description

[0045] Figure 1 A perspective view of a mixer provided in an embodiment of the present invention;

[0046] Figure 2 This is a three-dimensional structural diagram of a mixer provided in an embodiment of the present invention;

[0047] Figure 3 A vertical cross-sectional schematic diagram of an air intake device for a semiconductor deposition apparatus without a flow guide provided in an embodiment of the present invention;

[0048] Figure 4 A cross-sectional schematic diagram of a gas channel in a mixer with a flow guide provided in an embodiment of the present invention;

[0049] Figure 5 A cross-sectional view of an air intake device for a semiconductor deposition apparatus provided in an embodiment of the present invention;

[0050] Figure 6 Another perspective view provided by an embodiment of the present invention, showing gas inlets staggered at the first end;

[0051] Figure 7 Another perspective view provided for an embodiment of the present invention, showing a gas inlet surrounding the first end;

[0052] Figure 8 A cross-sectional view of a mixer with a cylindrical guide section provided in an embodiment of the present invention;

[0053] Figure 9 A cross-sectional view of the air intake device of a semiconductor deposition apparatus having an equilateral triangular guide section provided in an embodiment of the present invention;

[0054] Figure 10 A cross-sectional view of a mixer with an inverted triangular guide section provided in an embodiment of the present invention;

[0055] Figure 11 A cross-sectional view of a mixer with a protruding guide portion provided in an embodiment of the present invention;

[0056] Figure 12 A cross-sectional view of a mixer with a protruding structure provided in an embodiment of the present invention;

[0057] Figure 13 This is a schematic diagram of the substrate processing apparatus provided in an embodiment of the present invention;

[0058] Figure 14 This is a schematic diagram of the substrate processing apparatus provided in an embodiment of the present invention;

[0059] Figure 15 A flowchart illustrating a gas mixing method provided in an embodiment of the present invention. Detailed Implementation

[0060] To make the objectives, technical solutions, and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without inventive effort are within the scope of protection of the present invention. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed following the word and its equivalents, but does not exclude other elements or objects.

[0061] To address the problems existing in the prior art, embodiments of the present invention provide an air intake device for a semiconductor deposition apparatus, used to introduce a gas reaction source into the reactor of the semiconductor deposition apparatus. The air intake device includes a pipeline, a mixer, and a diffuser. The pipeline is fluidly connected to the mixer, and a valve is provided on the pipeline for controlling the process gas introduced into the mixer. The mixed process gas in the mixer is introduced into the diffuser, and the diffuser is fluidly connected to the reactor.

[0062] refer to Figure 1 and Figure 2 As shown, the gas inlet device of this semiconductor deposition apparatus is used to mix the gas in the reactor. The mixer 1 of the gas inlet device of the semiconductor deposition apparatus has an inner cavity 13, and the mixer 1 includes a first end 11 and a second end 12, which are disposed opposite to each other, and the cross-sectional area of ​​the inner cavity 13 is the same from the first end 11 to the second end 12. The second end 12 has a gas outlet 14, which communicates with the inner cavity 13 and is fluidly connected to the gas inlet of the reactor. Furthermore, the mixer 1 has a gas channel 15 on a side or sidewall different from the first end 11 and the second end 12, which communicates with the inner cavity 13 for inputting gas. The gas channel 15 extends from the side of the mixer 1 to the inner cavity 13 of the mixer.

[0063] In a preferred embodiment, the gas channel 15 is provided with two or more; Figure 1Two gas channels 15 are illustrated, located on different sidewalls of the mixer 1. One gas channel 15 is used to input a first gas, and the other gas channel 15 is used to input a second gas. It should be understood that both gas channels 15 may also be located on the same sidewall, and the number of gas channels 15 may be one or more; this embodiment does not limit this. Preferably, the gas channel 15 may be located near the first end 11, or it may be located between the first end 11 and the second end 12. The specific location can be set according to requirements. At least one gas channel 15 can also be used to introduce a mixture of the first and second gases.

[0064] In one embodiment, the first gas may be a reactant gas (e.g., it may include a precursor, or, for example, hydrogen, ammonia, water vapor, etc.), and the second gas may be a carrier gas or a purge gas, such as an inert gas like argon, helium, or nitrogen. The embodiments of the present invention are not limited to the above description; the first gas and the second gas are interchangeable, and the first gas / second gas may be a mixture of a carrier gas and a reactant gas, entering the inner cavity of the mixer through the same gas channel 15.

[0065] In a preferred embodiment, the inner cavity 13 of the mixer 1 is provided with a flow guide 16, which extends from the first end 11 to the second end 12, forming a flow space in the inner cavity 13. When gas from the gas channel 15 is introduced into the inner cavity 13, it first flows and mixes in this flow space, and then the mixed gas is introduced into the reactor through the gas outlet 14 to react or deposit on the substrate. When the inner cavity 13 of the mixer 1 is provided with a flow guide, the main body 1 of the gas inlet device of the semiconductor deposition equipment and the flow guide can be manufactured by an integral processing method. Compared with the prior art, it is not necessary to splice small pieces, avoids the use of sealing rings, thereby reducing the possibility of particulate contamination, reducing processing difficulty, extending service life and processing and use costs, avoiding reaction gas leakage, and improving the performance of the gas inlet device of the semiconductor deposition equipment.

[0066] like Figure 3As shown, in one possible embodiment, the inner cavity 13 of the mixer 1 may not have a flow guide. The gas channel 15 can connect to the first reaction source 81, the second reaction source 82, the third reaction source 83, and / or the fourth reaction source 84 in the pipeline. Each reaction source pipeline is equipped with a valve 8. Gas can be input into the inner cavity 13 through the gas channel 15 for mixing. At least two of the gas channels 15 are arranged on different sides of the mixer, and the gas channels 15 are not parallel to the central axis of the inner cavity 13 of the mixer. Specifically, for example, the gas channel 15 is arranged to extend from the second end 12 toward the first end 11 on the side wall of the mixer 1. When the first gas and / or the second gas enter the inner cavity through the gas channel 15, they first move from the second end toward the first end, and after flowing and mixing in the cavity, they flow out through the gas outlet 14. This design can help the gas in the gas channel 15 to be fully mixed in the inner cavity 13.

[0067] In one possible embodiment, when Figure 3 When the mixer 1 has one gas channel 15, the reactant gas or a mixture of reactant gas and carrier gas transported by the gas channel 15 will flow and mix with the carrier gas input into the inner cavity 13 in the inner cavity, and finally the mixed gas will be discharged from the gas outlet 14. In another possible embodiment, when the mixer 1 has two gas channels 15, the first gas and the second gas transported by the two gas channels 15 will flow and mix with the carrier gas input into the inner cavity 13 in the inner cavity, and finally the mixed gas will be discharged from the gas outlet 14. When the gas channel 15 for introducing reactant gas is not located near the first end 11, the gas channel 15 for introducing purge gas or carrier gas can be located near the first end 11, so that the reactant gas can be fully mixed and flow out to the gas outlet.

[0068] In the above embodiments, the cross-section of the gas channel 15 can be arc-shaped, such as teardrop-shaped or crescent-shaped, for example, as shown in the example. Figure 1 and Figure 2 As shown, the cross-section of the gas channel 15 extending into the inner cavity is teardrop-shaped. It should be understood that this cross-section can also be set as a polygon, such as a triangle or quadrilateral. Such a design allows the gas to rotate or spiral as it is input from the gas channel 15 into the inner cavity 13, thereby further ensuring the uniformity of gas mixing.

[0069] In an embodiment where the inner cavity 13 of the mixer 1 has a flow guide 16, two gas channels 15 are provided on different side walls of the inner cavity 13, as shown in the reference. Figure 4The diagram shows a cross-sectional view of the gas inlet device of a semiconductor deposition apparatus. Two gas channels 15 are respectively disposed on opposite sides of the mixer 1, and are offset from the central axis of the guide section 16 (the central axis of the guide section 16 coincides with the central axis of the inner cavity 13) on the sidewall of the mixer 1. This allows gas to enter the inner cavity 13 through the gas channel 15 on one side of the mixer 1 and flow towards the opposite side of the gas channel 15, thereby ensuring thorough mixing of the gas within the flow space of the inner cavity 13. In other embodiments, the gas channel 15 may also be configured to form a certain angle with the central axis of the guide section 16, thereby ensuring thorough mixing of gases introduced through different gas channels 15 within the flow space of the inner cavity 13.

[0070] In some embodiments, two gas channels 15 are respectively disposed on adjacent sides of the mixer 1, or they may be disposed on the same side. When the two gas channels 15 are located on the same sidewall of the mixer 1, they may be disposed at the same height or at different heights. In other embodiments, gas channels 15 may be disposed on multiple sidewalls of the mixer 1. The present invention does not limit the number and position of the gas channels. Any arrangement on the sidewall of the mixer 1 that enables the gas entering the inner cavity 13 to be fully mixed is within the protection scope of the present invention.

[0071] In some embodiments, the first end 11 of the gas inlet device of the semiconductor deposition apparatus described above may also be provided with at least one gas inlet 17 for introducing a third gas, the gas inlet 17 being connected to the inner cavity 13. The third gas may be the carrier gas mentioned above, or it may refer to a purge gas or a reaction gas. This application does not limit the type of the third gas. The first gas, the second gas, and the third gas are all process gases.

[0072] When purge gas is introduced into the gas inlet 17, it can be used to purge the gas passage and the original reaction gas or precursor in the reaction chamber after one reaction gas is introduced into the reaction chamber, and then the next reaction gas is introduced to continue the reaction or deposition. When the gas passage 15 for introducing reaction gas is not located near the first end, the gas inlet 17 can also be located near the first end, and an inert gas such as a carrier gas or purge gas can be introduced to promote the full mixing of the gas in the inner cavity 13 and allow it to flow out from the gas outlet. The gas inlet 17 can also be used to purge the residual gas in the mixer and reaction chamber during the reaction process.

[0073] In one embodiment, the third gas can be a carrier gas or a purge gas, and the carrier gas and purge gas can be, for example, inert gases. The embodiments of the present invention are not limited to the above description; the first gas, the second gas, and the third gas are interchangeable, and the third gas can also be a mixture of the carrier gas and the reactant gas, entering the inner cavity of the mixer through the same gas inlet.

[0074] For example, such as Figure 5 As shown, two gas inlets 17 are respectively located at the first end, and the gas inlets 17 form a certain angle with the axis of the inner cavity 13. It should be understood that... Figure 5 The side wall of the inner cavity is also provided with a gas channel 15 (not shown in the figure). The gas channel 15 can connect the first reaction source 81, the second reaction source 82, the third reaction source 83 and / or the fourth reaction source 84 in the pipeline. Each reaction source pipeline is provided with a valve 8. When the gas in the gas channel 15 passes through the first end near the annular channel, the carrier gas introduced by the two gas inlets 17 can promote the full mixing of the gas in the inner cavity 13 and smoothly discharge it from the gas outlet 14. The gas inlets 17 can also be used to introduce reaction gas or mix reaction gas with carrier gas, etc., which are not limited in this invention.

[0075] Another example, such as Figure 6 As shown, the gas inlets 17 are arranged at the first end in a staggered and non-interconnected manner. This arrangement aims to ensure that the gas inlets 17 are not parallel to the central axis of the mixer cavity 13 (the central axis of the cavity 13 refers to the axis perpendicular to the first end 11 and the second end 12 in the mixer 1, as shown in the figure). That is, the gas inlets 17 form a certain angle with the central axis of the cavity 13. This design allows the gas introduced through the gas inlets 17 to simultaneously possess both horizontal and vertical flow momentum, thereby ensuring sufficient flow and mixing within the flow space formed by the mixer cavity 13 and the guide section 16, and then flowing out through the gas outlet 14. Another example is... Figure 7 As shown, each gas inlet 17 surrounds the first end with the axis of the inner cavity 13 as the center and extends from the first end to the inner cavity. When a third gas is introduced into the gas inlet 17, the mixing and transport of the gas in the cavity can be accelerated, thereby ensuring uniform gas mixing. When multiple gas inlets 17 are used as purge gas inlets, the original reaction gas or precursor in the gas channel and reaction chamber can also be purged and removed, thereby further improving the quality of the deposited film. Figure 6 The diagram shows two gas inlets 17 staggered at the first end 11 on opposite sides of the mixer. In other embodiments, they may also be located on adjacent sides. It should be understood that the shape, number, and arrangement of the gas inlets 17 are not limited, and various designs where the first end 11 is not parallel to the central axis of the inner cavity 13 are included within the scope of protection of this invention.

[0076] In some embodiments, the inner cavity 13 may have the same cross-sectional area from the first end 11 to the second end 12, and then the guide portion 16 can be configured with different shapes as needed. For example, Figure 5 and Figure 8 As shown, the guide portion 16 is cylindrical, and the cross-section of the annular channel formed by the guide portion 16 and the inner cavity 13 is approximately the same from the first end to the second end. Another example is... Figure 9 As shown, the vertical cross-section of the guide portion 16 is, for example, approximately equilateral triangular, meaning that the cross-section of the annular channel formed by the guide portion 16 and the inner cavity 13 gradually decreases towards the first end 11. Another example, such as... Figure 10 As shown, the cross-section of the guide section 16 is inverted triangular, and the cross-section of the annular channel formed by the guide section 16 and the inner cavity 13 gradually increases towards the first end 11. It should be understood that the guide section 16 can also be provided with corresponding chamfers as needed, so that the introduced gas is less likely to stagnate in the hard dead angle formed by the guide section 16. Similarly, corresponding chamfers are also provided in the inner cavity 13. The mixer 1 in the above example also has a gas channel, but it is not shown in the figure. The specific location and method of the gas channel can be found above.

[0077] In some embodiments, reference Figure 11 As shown, the cross-sectional area of ​​the inner cavity 13 from the first end 11 to the second end 12 is approximately the same, and the cross-sectional area of ​​the flow guide 16 from the first end 11 to the second end 12 is also approximately the same. This makes the cross-section of the annular channel formed by the flow guide 16 and the inner cavity 13 approximately the same from the first end to the second end. The outer wall of the flow guide 16 is provided with a spiral protrusion 18 facing the inner cavity 13 along the extension direction of the flow guide, so that a spiral flow channel is formed in the flow space of the inner cavity, and the gas generates turbulence in the spiral channel.

[0078] refer to Figure 12As shown, in some embodiments, the protrusion 18 is provided with several spaced-apart, for example, fin-shaped protrusions 20. These protrusions 20 cause further turbulence in the local airflow, increasing gas residence time and further improving gas mixing. The cross-sectional shape of the protrusion 18 can be various shapes such as square, pyramid, or rhombus. The protrusion 18 obstructs the gas in the inner cavity 13, helping to guide the gas flow, thereby forming a spiral flow channel in the flow space defined by the inner cavity 13 of the mixer 1 and the guide section 16, further improving the uniformity of gas mixing. In another possible embodiment, in addition to the spiral protrusion 18 circumferentially arranged on the outer wall of the guide section 16 facing the inner cavity 13 along the extending direction of the guide section, a spiral groove can also be provided on the inner wall of the inner cavity, as shown in the reference. Figure 11 As shown, the inner cavity 13 may also be provided with a spiral groove 19 on the inner wall ring facing the guide portion 16. The spiral groove 19 may be correspondingly arranged with the protrusion 18, forming a certain obstruction to the gas in the inner cavity 13, so that the gas flows and mixes in the annular channel. There is a gap between the inner cavity and the guide portion 16. The mixed gas entering the inner cavity through the gas channel flows spirally in the flow space and flows along the extension direction of the guide portion 16. It should be understood that... Figure 11 The illustration shows a combination of a spiral groove 19 and a protrusion 18 in the air intake device of a semiconductor deposition apparatus. The air intake device of the semiconductor deposition apparatus may have either a spiral groove 19 or a protrusion 18 alone, thereby forming a spiral flow channel in the inner cavity 13 in various forms to improve the mixing effect. These will not be illustrated in detail here, but it should be understood that all designs that form a spiral channel in the inner cavity are within the protection scope of this invention.

[0079] It should be understood that when the outer wall of the guide portion 16 is provided with a spiral protrusion 18, the guide portion 16 can be manufactured independently for ease of processing, instead of being manufactured as an integral part of the main body of the mixer 1. Specifically, the protrusion 18 can be machined on the guide portion 16 first, and then the spiral groove 19 can be machined in the inner cavity 13 as needed. Next, the guide portion 16 is inserted into the inner cavity 13, and then the first end 11 and the lower end of the outer wall of the inner cavity 13 of the mixer 1 are welded together.

[0080] In yet another embodiment of the present invention, a substrate processing apparatus is provided, with reference to... Figure 13As shown, the substrate processing apparatus may include a diffuser 2, a reactor 3, and a mixer 1 disclosed in any of the above embodiments. The gas outlet of the mixer 1 is connected to the gas inlet 21 of the diffuser 2. The diffuser 2 is used to diffuse the gas mixed in the mixer and is fluidly connected to the gas inlet 31 of the reactor 3 through the gas outlet 22. The gas inlet 31 and the gas outlet 32 ​​of the reactor 3 are located on opposite sides of the main body of the reactor 3, so that the gas reaction source introduced into the reactor 3 forms a laminar flow above the wafer in the reactor 3. By diffusing the mixed gas output from the gas outlet of the mixer 1 through the diffuser 2, the uniformity of the diffused gas in the reactor 3 can be ensured, thereby improving the deposition effect.

[0081] In another embodiment of the present invention, a substrate processing apparatus is provided, with reference to... Figure 14 As shown, the atomic deposition apparatus includes a mixer 1 and a reactor with a spray head structure 5. The reactor includes an upper chamber cover 6 configured as a gas channel plate, which has a gas inlet 61, a gas outlet 62, and an exhaust port 63. The gas inlet 61 is located at the center of the upper part of the upper chamber cover 6, and the gas outlet 62 is located on the gas channel plate away from the center. The exhaust port 63 is used to discharge the reacted gas. The spray head structure 5 divides the reactor into a gas diffusion chamber 51 and a reaction chamber 52. The reactor also includes a lower chamber 7 with a wafer tray 71 for placing a substrate 75. The lower chamber 7 has a lower chamber isolation component 72 that separates the reaction chamber 52 from the lower chamber 7, ensuring the sealing of the reaction chamber 52. The bottom of the lower chamber 7 also has a lower chamber air inlet 73 and a lower chamber air outlet 74, allowing for separate air intake and exhaust in the lower chamber to maintain a vacuum state. The gas channel 15 of the mixer 1 can be connected to, for example, a first reaction source 81, a second reaction source 82, a third reaction source 83, and / or a fourth reaction source 84. Each reaction source can provide different reaction gases, and each reaction source is equipped with a valve 8 for control. A purge inlet 85 may also be provided above the mixer 1, through which purge gas can be discharged. The gas outlet of the mixer 1 is connected to the gas channel plate, ensuring that the gas required by the reactor is fully mixed in the mixer 1 before being introduced into the reactor, thereby improving membrane homogeneity and reactor efficiency.

[0082] refer to Figure 15 As shown, in another embodiment of the present invention, a method for air intake in a semiconductor deposition apparatus is provided, the method being applied to... Figure 11 The method, as shown in the mixer 1, includes:

[0083] S151: Different process gases are controlled by valves in the pipeline to enter the inner cavity of the mixer through the gas channel.

[0084] S152: The process gas generates turbulence in the spiral flow channel, and generates local turbulence and vortices at the protruding structure, forming a uniform mixed gas.

[0085] S153: The mixed gas is delivered to the diffuser and diffused before entering the reactor.

[0086] In this embodiment, by adopting Figure 12 The mixer shown generates turbulence as various gases flow through the spiral flow channel and protruding structure, which prolongs the residence time of the gases in the mixer, enhances the mixing effect, and further improves the uniformity of gas mixing.

[0087] It should be understood that any combination based on the above embodiments of the present invention is within the protection scope of the present invention. Any annular flow channel with a spiral structure can produce the above mixing process. The protection scope of the present invention is not limited to the above embodiments.

[0088] The above description is merely a specific implementation of the embodiments of this application, but the protection scope of the embodiments of this application is not limited thereto. Any changes or substitutions within the technical scope disclosed in the embodiments of this application should be covered within the protection scope of the embodiments of this application. Therefore, the protection scope of the embodiments of this application should be determined by the protection scope of the claims.

Claims

1. A gas inlet device for a semiconductor deposition apparatus, used to introduce a gas reaction source into the reactor of the semiconductor deposition apparatus, characterized in that, The air intake device includes a pipeline, a mixer, and a diffuser. The pipeline is fluidly connected to the mixer and is equipped with a valve for controlling the process gas introduced into the mixer. The mixed process gas in the mixer is then introduced into the diffuser, which is fluidly connected to the reactor. The mixer has an inner cavity, and the mixer further includes a first end and a second end, which are disposed opposite to each other; the cross-sectional area of ​​the inner cavity is the same from the first end to the second end; the second end is provided with a gas outlet, which is in fluid communication with the diffuser; The mixer has a gas passage on a side different from the first end and the second end that communicates with the inner cavity. The gas passage is fluidly connected to the pipeline for inputting the first gas and / or the second gas required by the reactor. The inner cavity is provided with a flow guide section, which extends from the first end to the second end, so that a flow space is formed in the inner cavity. The first gas and / or the second gas entering through the gas channel flows and mixes in the flow space and is then introduced into the reactor. The outer wall of the flow guide is provided with a spiral protrusion facing the inner cavity along the extension direction of the flow guide, so that a spiral flow channel is formed in the flow space of the inner cavity. The inner wall of the inner cavity is provided with a spiral groove along the extension direction of the guide portion. The spiral groove is provided in correspondence with the protrusion, so that the gas entering the inner cavity flows and mixes spirally in the flow space. There is a gap between the inner cavity and the guide section. The mixed gas entering the inner cavity through the gas channel flows spirally in the flow space and flows along the extension direction of the guide section. The mixer is made of materials resistant to specific temperatures and corrosion, such as aluminum, aluminum alloy, titanium, ceramic, stainless steel, or Hastelloy; and different secondary treatments are selected according to different thin film deposition processes, including surface passivation, mechanical treatment, or coating. The protrusion is provided with several fin-shaped protrusions spaced apart.

2. The air intake device of the semiconductor deposition equipment according to claim 1, characterized in that, The mixer and the guide section are integrally formed.

3. The air intake device of the semiconductor deposition equipment according to claim 1, characterized in that, The guide portion and the inner cavity cooperate to form an annular channel, and the cross-section of the annular channel is approximately the same from the first end to the second end; The gas channel extends into the inner cavity in a teardrop or polygonal shape.

4. The air intake device of the semiconductor deposition equipment according to claim 1, characterized in that, The mixer has at least two gas channels on a side different from the first end and the second end, which are connected to the inner cavity. The at least two gas channels are fluidly connected to the pipeline for inputting the first gas, the second gas and / or the third gas required by the reactor. At least two gas channels are provided on different sides of the mixer, and the gas channels are not parallel to the central axis of the mixer cavity. When the gas enters the cavity through the gas channel, it first moves toward the first end, and after flowing and mixing in the cavity, it flows out through the gas outlet.

5. A method for air intake in a semiconductor deposition apparatus, characterized in that, Applied to the air intake device as described in claim 1, the method includes: controlling different process gases to enter the inner cavity of the mixer through the gas channel by a valve in the pipeline; The process gas generates turbulence in the spiral flow channel and local turbulence at the protruding structure, forming a uniform mixed gas. The mixed gas is delivered to the diffuser and diffused before entering the reactor.

6. A substrate processing apparatus, characterized in that, The device includes an air inlet, a diffuser, and a reactor of the semiconductor deposition apparatus as described in claim 1, wherein the gas outlet of the mixer is connected to the air inlet of the diffuser, and the diffuser is used to diffuse the gas mixed by the mixer and is in fluid communication with the gas inlet of the reactor. The gas inlet and gas outlet of the reactor are located on opposite sides of the reactor body, so that the gas reaction source introduced into the reactor forms a laminar flow above the wafer in the reactor. The seal between the mixer and the diffuser is a metal-to-metal seal.

7. The substrate processing apparatus according to claim 6, characterized in that, When the reactor is used for a low-temperature process below 300°C, the mixer and the diffuser are sealed with a sealing ring.

8. A substrate processing apparatus, characterized in that, Includes the air intake device of the semiconductor deposition equipment as described in claim 1 and the reactor with a spray head structure; The reactor includes an upper chamber cover configured as a gas channel plate, a spray head structure dividing the reactor into a gas diffusion chamber and a reaction chamber, and a lower chamber containing a wafer tray. The gas outlet of the mixer is connected to the gas channel plate, so that the gas required by the reactor is mixed in the mixer before being introduced into the reactor. The mixer and the gas channel plate are sealed with a sealing ring, and the temperature of the mixer and the gas channel plate does not exceed 300°C.

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