Optical device fabrication method and optical interconnection packaging method
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
- Filing Date
- 2023-06-07
- Publication Date
- 2026-07-07
AI Technical Summary
Existing integrated optical chips are difficult to achieve a unified pattern structure among chips made of different materials, resulting in high difficulty in optical coupling, low integration density, and high optical coupling loss.
By pre-setting a sputtering region on a substrate, an optical device is formed by controlling the deposition of sputtered particles using an electromagnetic field. Semiconductor materials are grown on the substrate by magnetron sputtering, and combined with annealing, a low-dislocation, low-defect optical device is prepared, realizing optical interconnection packaging between chips of different material systems.
This technology enables the transformation of optical device dimensions between chips based on various material systems, improves optoelectronic integration, reduces optical coupling loss, decreases chip size, and promotes low-loss coupling in large-scale photonic integrated chips.
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