Preparation method of two-dimensional material with interlayer vertical electric transport channel and two-dimensional material

Abstract

This invention relates to the field of two-dimensional materials, and particularly to a method for preparing a two-dimensional material with interlayer vertical electrical transport channels. The steps are as follows: creating a supersaturated environment for the first intrinsic principal atoms in a gaseous state, while simultaneously placing the second intrinsic principal atoms in an unsaturated state; introducing a vertical p-type electrical transport channel into the gas flow path. z The doping source of the valence electron orbital replaces the unsaturated second intrinsic principal atom, and the doping source interacts with the p-type of the saturated first intrinsic principal atom. z The orbitals undergo strong coupling hybridization, activating the p-axis of the saturated first intrinsic principal atom. z The vertical extension of the track forms an interlayer vertical electrical transport channel. This invention features a simple process, good compatibility with current micro / nano fabrication technologies, high yield, excellent film quality, and stable vertical conductive channels at room temperature. It also offers strong reusability and can expand the application of two-dimensional materials, especially two-dimensional semiconductor materials, in novel vertical structure electronic devices.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of two-dimensional materials, and particularly to a preparation method of a two-dimensional material with interlayer vertical electric transport channels and the two-dimensional material. BACKGROUND

[0002] Since the emergence of graphene, a large number of two-dimensional materials have been discovered, among which there are insulators, semiconductors, conductors and superconductors, such as the semiconductor boron nitride with an ultra-wide band gap, which has gradually shown its own value in different application fields. At the same time, it has the advantages of no dangling bond on the surface, high thermal conductivity, high mechanical strength, etc., and can be integrated with other two-dimensional or three-dimensional materials through various micro-nano processing means, which has aroused people's enthusiasm for exploration.

[0003] However, unlike bulk materials, two-dimensional materials are coupled between layers by weak van der Waals forces, making it difficult to achieve effective transport in the vertical direction of electric transport, thus limiting its application in new electronic devices. For example, two-dimensional boron nitride is mainly used as a tunneling layer or a dielectric layer in vertical devices, playing the role of a green leaf highlighting a red flower, and inevitably missing many exquisite new vertical structure electronic devices. At present, the methods for regulating the interlayer interaction of two-dimensional materials mainly include changing the twist angle between the adjacent two layers, applying pressure, regulating the interlayer distance, or bonding the layers through pulsed laser. However, these methods have the problems of unsatisfactory effect and complex device manufacturing process, which is not compatible with current micro-nano processing technology.

[0004] Therefore, how to enhance the performance of vertical electric transport of two-dimensional materials and make them directly obtain vertical electric transport capability has become a research hotspot. SUMMARY

[0005] To solve the problem of insufficient vertical electric transport performance of two-dimensional materials in the prior art, the present application provides a preparation method of a two-dimensional material with interlayer vertical electric transport channels, which comprises the following steps:

[0006] In a gaseous state, a first intrinsic main atom supersaturated environment is created, and a second intrinsic main atom is in a non-saturated state;

[0007] A doping source containing a vertical p z orbital is introduced into the gas flow path, so that the doping source replaces the non-saturated second intrinsic main atom and strongly couples and hybridizes with the p z orbital of the saturated first intrinsic main atom, activates the extension of the p z orbital of the saturated first intrinsic main atom in the vertical direction, and forms an interlayer vertical electric transport channel.

[0008] In an embodiment, the first intrinsic main atom supersaturation environment building process is:

[0009] A chemical vapor deposition system is set up, including an outer tube and a small tube with an independent gas path; the outlet end of the small tube is provided with a single-port tube, the outlet end of the small tube extends into the single-port tube, the inner diameter of the single-port tube is larger than the outer diameter of the small tube, a quartz rod is provided in the small tube, and the outlet end of the quartz rod extends to the bottom of the single-port tube; the outlet end of the small tube, the outlet end of the quartz rod, and the inlet end of the single-port tube form a reaction chamber, and the reaction chamber is provided with a growth substrate.

[0010] Before the growth of the two-dimensional material, a preliminary solution containing the first intrinsic main atom of the two-dimensional material is coated on the surface of the outlet end of the quartz rod; when the growth is to be performed, the quartz rod is pushed into the single-port tube, the preliminary solution is dehydrated at a high temperature to convert the solute into a molten state and a gaseous state, and the components are in a disordered state at this time, so as to build a first intrinsic main atom supersaturation environment, and at the same time, the second intrinsic main atom is unsaturated, the atomic ratio in the two-dimensional material is broken, and more vacancies are created to replace the doping atoms.

[0011] In an embodiment, p z The track coupling doping process is:

[0012] A precursor temperature zone is provided in the inner part of the outer tube, a doping source temperature zone is provided in the inner part of the small tube, and a growth temperature zone is provided in the inner part of the single-port tube; the substrate is placed in the growth temperature zone, and the vacuum degree of the chemical deposition system is ensured to be lower than 10 -4 torr; before growth, the substrate is annealed at 1000-1200℃ in the atmosphere of a protective gas; when the growth is to be performed, the temperature of the precursor temperature zone is allowed to reach 80-120℃, the temperature of the doping source temperature zone is allowed to reach 400-800℃, and the temperature of the growth temperature zone is allowed to reach 1000-1200℃; the decomposition products of the precursor in the precursor temperature zone and the decomposition products of the doping source in the doping source temperature zone are respectively sent to the substrate in the reaction chamber through their respective gas paths for growth, and finally the doping atoms of the doping source rapidly replace the unsaturated second intrinsic main atoms under the catalysis of the high temperature and the substrate, and are squeezed into vacancies, and the p z track coupling doping with the first intrinsic main atoms in the two-dimensional material lattice is completed, and finally the two-dimensional material with an interlayer vertical electric transport channel is obtained.

[0013] In an embodiment, the two-dimensional material is one of two-component or multi-component two-dimensional materials such as two-dimensional hexagonal boron nitride, two-dimensional transition metal sulfide, and two-dimensional oxide.

[0014] Specifically, when the two-dimensional material is boron nitride, the first intrinsic main atom is B, and the second intrinsic main atom is N. Those skilled in the art can determine the specific composition of the first intrinsic main atom and the second intrinsic main atom according to the specific type of the two-dimensional material, which will not be repeated here.

[0015] In an embodiment, the outlet end of the small tube, the outlet end of the quartz rod, and the inlet end of the single-port tube form an M-shaped reaction chamber. The M-shaped reaction chamber can slow down the gas flow rate in the single-port quartz tube, so that the final grown two-dimensional material has good performance.

[0016] In an embodiment, the growth substrate is a metal substrate or a semiconductor substrate. Specifically, the metal substrate includes any one of a copper foil, a nickel foil, a platinum foil, or an alloy substrate; and the semiconductor substrate includes any one of Si, SiO2, GaN, or a sapphire substrate.

[0017] Further, the substrate is inserted into the single-port tube in a multi-layer coiled hollow columnar shape to increase the contact time of the dopant source decomposition product with the substrate, so that the final grown two-dimensional material has good performance.

[0018] In an embodiment, the solute of the prepared solution uses a compound having one atom in a two-component two-dimensional material or multiple atoms in a multi-component two-dimensional material, and the solute is easily soluble in water and can be converted into a molten state or a gaseous state at high temperature. Specifically, when the two-dimensional material is boron nitride, the solute can use boron oxide.

[0019] In an embodiment, the inlet end of the quartz rod is provided with a magnet. Specifically, the inlet end of the quartz rod is connected with the magnet to form a multi-stage push-pull device as a whole, which facilitates pushing the raw material to the growth temperature zone for heating.

[0020] In an embodiment, the precursor is a solid-state reagent containing each component of the two-dimensional material. Specifically, when the two-dimensional material is boron nitride, the precursor is at least one of borane ammonia and borazine.

[0021] In an embodiment, when the two-dimensional material is boron nitride, the dopant source element composition includes any one of Mg, Zn, and O. Specifically, the dopant source can use a dopant source containing Mg, Zn, O, and other dopant atoms containing P z valence electron orbitals, and the dopant atom can strongly hybridize with the P z orbitals of the intrinsic main atom, which can be selected by those skilled in the art according to actual needs.

[0022] In an embodiment, the protective gas includes hydrogen and argon; and the carrier gas includes hydrogen and argon.

[0023] The application also provides a two-dimensional material prepared by the preparation method of the two-dimensional material with interlayer vertical electric transport channels.

[0024] Based on the above, compared with the prior art, the application has the following beneficial effects:

[0025] 1、The preparation method of the two-dimensional material with interlayer vertical electric transport channels provided by the application breaks the proportion between the first intrinsic main atoms and the second intrinsic main atoms in the two-dimensional material to create more vacancies, so that the doping atoms can replace the unsaturated second intrinsic atoms for doping.

[0026] 2、The preparation method of the two-dimensional material with interlayer vertical electric transport channels provided by the application selects a doping source containing a vertical p z orbital, and the doping atoms in the doping source can strongly hybridize with the p z orbital of the first intrinsic main atoms, activate the extension of the p z orbital of the first intrinsic main atoms in the vertical direction, and connect to form an interlayer vertical electric transport channel, thereby effectively enhancing the interlayer vertical current of the two-dimensional material.

[0027] 3、The two-dimensional material provided by the application has a higher interlayer vertical current, stable quality, simple process, strong controllability of the doping degree in the production process, high yield, strong secondary transplantation usability, and good application value.

[0028] Other features and beneficial effects of the application will be described in the following description, and some of them will become apparent from the description, or be understood by implementing the application. The purposes and other beneficial effects of the application can be achieved and obtained by the structures specifically pointed out in the description, claims, and drawings. BRIEF DESCRIPTION OF DRAWINGS

[0029] In order to more clearly illustrate the technical solutions in the embodiments of the application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiments or the prior art description. Obviously, the drawings described in the following description are some embodiments of the application, and for those skilled in the art, other drawings can also be obtained without creative labor based on these drawings; in the following description, the positional relationship described in the drawings is the direction of the components drawn in the drawings as the reference, unless otherwise specified.

[0030] Figure 1 The structural schematic diagram of the CVD tube furnace used in an embodiment of the application;

[0031] Figure 2 The circuit schematic diagram for in-situ conductive atomic force microscope testing in an embodiment of the application;

[0032] Figure 3 SEM morphology map for Comparative Example 1;

[0033] Figure 4 SEM morphology map for Example 1;

[0034] Figure 5 XPS B 1s binding energy electron spectroscopy map for Example 1;

[0035] Figure 6 XPS N 1s binding energy electron spectroscopy map for Example 1;

[0036] Figure 7 XPS O 1s binding energy electron spectroscopy map for Example 1;

[0037] Figure 8 Chemical structure schematic for Example 1;

[0038] Figure 9 B element XPS mapping test results for Example 1;

[0039] Figure 10 N element XPS mapping test results for Example 1;

[0040] Figure 11 O element XPS mapping test results for Example 1;

[0041] Figure 12 AES test results for Comparative Example 1;

[0042] Figure 13 AES test results for Example 1;

[0043] Figure 14 Raman spectroscopy test results for Comparative Example 1;

[0044] Figure 15 Raman spectroscopy test results for Example 1;

[0045] Figure 16 Transmission spectroscopy results schematic for Comparative Example 1 and Example 1;

[0046] Figure 17 Absorption spectroscopy results schematic for Comparative Example 1 and Example 1;

[0047] Figure 18 CAFM test results for Comparative Example 1;

[0048] Figure 19 Current distribution histograms for 1, 2, 3 regions of Figure 18 ​

[0049] Figure 20 I-V graph at a point in 1, 2, 3 regions of Figure 18

[0050] Figure 21 CAFM test result graph of Example 1C

[0051] Figure 22 Current distribution histogram of 1, 2, 3 regions of Figure 21

[0052] I-V graph at a point in 1, 2, 3 regions of Figure 23 Figure 22

[0053] Figure 24 Differential charge density distribution graph of an embodiment of the present application

[0054] Figure 25 Density of states graph of oxygen impurities in Figure 24

[0055] Formation energy graph of O N Figure 26

[0056] Schematic diagram of interlayer vertical electric transport channel of an embodiment of the present application Figure 27 Reference signs:

[0057] 100 CVD tube furnace 110 quartz tube 111 gas path

[0058] 120 small tube 121 small tube gas path 130 precursor

[0059] 140 quartz rod 150 doping source 160 substrate

[0060] 170 single-port quartz tube 180 vacuum pump

[0061] DETAILED DESCRIPTION

[0062] In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some but not all of the embodiments of the present application; and the technical features in the different embodiments of the present application described below can be combined with each other as long as there is no conflict. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present application.

[0063] ​​​​​In the description of the present application, it should be noted that all the terms (including technical terms and scientific terms) used in the present application have the same meaning as that generally understood by the ordinary skilled person in the field to which the present application belongs, and should not be understood as a limitation on the present application; it should be further understood that the terms used in the present application should be understood as having the same meaning as the terms in the context of the present application and the related field, and should not be understood in an idealized or overly formal sense, unless otherwise defined in the present application.

[0064] Embodiment 1

[0065] The system adopts a three-temperature-zone CVD tube furnace 100, the three temperature zones of which can be independently heated, and the temperature zones are independent of each other by adding a porous heat insulation furnace plug.

[0066] The CVD tube furnace 100 adopted in the present application has a quartz tube 110 as the reaction cavity, with an inner diameter of 5 cm and an outer diameter of 6 cm. The quartz tube 110 is externally attached to a furnace body to heat the quartz tube 110. The externally attached furnace body has three independent heating zones, and the length of the quartz tube 110 is longer than the total length of the three heating zones. The two ends of the quartz tube 110 are connected to a gas path 111 using flanges. During heating, annealing, and growth, the cavity of the quartz tube 110 needs to maintain an overall vacuum environment. The precursors 130 and the substrate 160 are placed in a quartz boat, which is then placed in the quartz tube 110. Specifically, two quartz boats with different sizes are needed to place the precursors 130. The large quartz boat is a hollow semicircular cylinder with a diameter of 3 cm and a length of 10 cm, and the small quartz boat is a hollow semicircular cylinder with a diameter of 8 mm and a length of 4 cm. The precursors 130 are placed in the small quartz boat, which is then placed in the large quartz boat. The substrate 160 is coiled into a hollow cylinder and inserted into a single-port quartz tube 170 for storage. A small tube 120 with an inner diameter of 2 cm is provided in the cavity of the quartz tube 110. The inlet of the small tube 120 is located at the inlet of the gas path 111 of the quartz tube 110, and the small tube 120 is connected to a small tube gas path 121. The length of the small tube 120 covers the first temperature zone, the second temperature zone, and half of the third temperature zone. The outlet is located in the core heating zone of the third temperature zone, and the outlet end is located near the bottom of the single-port quartz tube 170, forming an independent gas path with the quartz tube 110. The doping source 150 is fixed on a quartz rod 150 using a small quartz boat and placed in the small tube 120. The end of the quartz rod 150 is located near the bottom of the single-port quartz tube 170 during growth.

[0067] The whole system is connected with gas path 111 and small tube gas path. The gas flow control meter is controlled by computer in real time to regulate the gas flow in different proportions to meet the experimental requirements. The end of the quartz tube 110 is connected and fixed by flange with two-stage device of mechanical pump and molecular pump to form vacuum pump 180. On the one hand, it ensures that the whole reaction cavity is in a vacuum state, and on the other hand, it can timely discharge the by-products and waste gas generated in the reaction out of the cavity.

[0068] A 3% boric acid solution is configured and coated on the surface of the quartz rod 150 near the front end of the third temperature zone with a brush. 5mg of borane ammonia is placed in zone 1, 5mg of boric oxide is placed in zone 2, and the polished copper foil is inserted into the single-port quartz tube in the form of a curled hollow column in zone 3. The heating parameters of each temperature zone are set, the vacuum pump 180 is started to keep the closed tube at 1*10 - 4 torr, and the tube furnace is started at the same time, and the heating of the three temperature zones is started.

[0069] When the temperature of the third temperature zone reaches 1050℃, Ar and H2 are introduced into the quartz tube 110, and the flow ratio of the two is kept at 20:10 to anneal the surface of the copper foil and reduce the oxides on the surface of the copper foil. The annealing time is 60min.

[0070] After annealing, the quartz rod 150 coated with boric acid is inserted into the single-port quartz tube during growth, and the doping source is dehydrated to a molten state under high temperature. At this time, the components are in a disordered state, so a boron-rich atomic environment can be created to break the atomic ratio in the intrinsic two-dimensional semiconductor to create more nitrogen vacancies for oxygen atoms to replace. At this time, the temperature of the first temperature zone reaches 93℃, the temperature of the second temperature zone reaches 450℃, the borane ammonia in the first temperature zone is pushed to the core heating area of the first temperature zone by pushing and pulling, the Ar:H2 flow ratio is changed to 10:3, the boric oxide in the second temperature zone is also pushed to the core heating area of the second temperature zone by pushing and pulling, Ar and H2 are introduced into the small tube 120, and the flow ratio of the two is kept at 10:3. Under the action of the carrier gas, the products decomposed from the precursor 130 and the products decomposed from the doping source 150 are sent to the substrate 160 through different gas paths, and finally deposited in the M-shaped gas flow path under the catalytic action of high temperature and the substrate 160, and grown for 10min.

[0071] After growth, the borane ammonia, quartz rod 150 and boric oxide are pulled out of the corresponding heating areas, the Ar:H2 flow ratio in the quartz tube 110 is changed to 20:10 again, the Ar and H2 in the small tube 120 are turned off, the cooling begins, and the quartz tube 110 is cooled to room temperature in the atmosphere of the protective gas. The delivery of Ar and H2 in the quartz tube 110 is stopped, the vacuum pump 180 is turned off, and the product is taken out, i.e. oxygen-doped two-dimensional hexagonal boron nitride is obtained.

[0072] Specifically, the annealing treatment has a reducing effect on the oxide layer on the surface of the copper foil, and makes the surface of the copper foil smoother, and to some extent, eliminates the gullies, and lays a foundation for the growth of boron nitride on the copper foil later.

[0073] Comparative Example 1

[0074] In the second temperature zone, no doping source 150, small tube 120, quartz rod 140, single-port quartz tube 170 are arranged, and the substrate 160 is placed in the large quartz boat, and at the same time, no heating program of the second temperature zone is performed, and finally, intrinsic two-dimensional hexagonal boron nitride is obtained.

[0075] The products of Example 1 and Comparative Example 1 were characterized. The specific characterization items and methods are as follows:

[0076] SEM: The copper foil on which boron nitride was grown was placed on the sample loading table, sent into the cavity, vacuumized, and then a 10kV voltage was applied. First, the selected area was analyzed at a lower magnification, and then the surface morphology of the boron nitride was analyzed and measured by magnification, focusing and adjusting astigmatism.

[0077] XPS: The boron nitride was transferred to the Si substrate by wet method, and XPS test was performed, and then the selected area was tested for corresponding element mapping.

[0078] AES test: The boron nitride was transferred to the Si substrate by wet method, and corresponding differential spectrum and integral spectrum test was performed.

[0079] Raman spectrum: The boron nitride was transferred to the SiO2 / Si substrate by wet method, and was placed on the sample loading table. It was focused under 20x and 50x optical lenses respectively, and after the image was clear, the laser size was adjusted, the integration time was set, and the measurement was started.

[0080] UV transmission and absorption spectrum: First, the blank double-polished sapphire substrate was fixed on the sample loading table and sent into the cavity. The background plate test was performed in the wavelength range of 190-800nm. After completion, the blank sapphire substrate was removed, and another double-polished sapphire substrate with wet-transferred boron nitride was fixed on the sample loading table and sent into the cavity. The previous sapphire substrate was used as the background, and the UV transmission and absorption spectrum test was performed in the wavelength range of 190-800nm.

[0081] The analysis of the characterization results is as follows:

[0082] The SEM results are as follows: Figures 3-4As shown, the surface morphology of Example 1 and Comparative Example 1 is similar. It can be clearly seen that the boron nitride surfaces of Comparative Example 1 and Example 1 have a large number of wrinkles caused by the inconsistency of the thermal expansion coefficient with the copper substrate. Furthermore, on the basis of the first layer of boron nitride completely covering the copper foil, there are some triangular-shaped second, third and even more layers of boron nitride.

[0083] XPS results are as follows Figures 5-7 As shown in Example 1, by fitting the electronic spectrum of the binding energy of B1s to decompose the asymmetric peak into two smaller peaks, it can be clearly seen that the main peak at 190.6 eV originates from the BN bond, while the weaker peak at 191.2 eV originates from the BO bond. Similarly, the presence of the BO bond can also be observed in the electronic spectrum of O1s, proving that O... N (like Figure 8 The presence of (as shown in the figure) indicates that the Si-O bond originates from the oxidation generated on the Si substrate. Figure 8 The green atoms are boron atoms, the gray atoms are nitrogen atoms, and the red atoms are oxygen atoms. Since oxygen atoms replace nitrogen atoms, it is called O. N .

[0084] XPS mapping results are as follows Figures 9-11 As shown, it can be visually observed that the surface of the h-BN film in Example 1 has uniform BO bonds and BN bonds.

[0085] AES test results are as follows Figures 12-13 As shown, since oxygen not only comes from the sample but also exists in large quantities in water vapor and air, directly measuring the oxygen content would inevitably lead to significant deviations. However, AES can be used to qualitatively compare the oxygen content in Comparative Example 1 and Example 1. In Comparative Example 1, the oxygen content in the five elements (B, C, N, Si, and O) was 11.7%, while in Example 1, the oxygen content in the four elements (B, C, N, Si, and O) was 32.3%. The significant difference in oxygen content between the two examples indicates that oxygen doping was achieved in the boron nitride obtained in Example 1 of this invention.

[0086] Raman spectroscopy results as follows Figures 14-15 As shown, compared with Comparative Example 1, the Raman peak position of Example 1 showed a significant blue shift, and many Raman companion peaks appeared. The full width at half maximum (FWHM) increased, which is very likely the result of vibration and lattice expansion caused by defects induced by oxygen doping.

[0087] Transmission and absorption spectral results are as follows Figures 16-17As shown in the transmission and absorption spectra of Comparative Example 1 and Example 1, a steep absorption peak can be seen in the deep ultraviolet band at about 5.95 eV, corresponding to the band edge absorption of boron nitride, and different from Comparative Example 1, the transmission and absorption spectra of Example 1 become steeper, indicating that the absorption spectrum is changed due to the introduction of oxygen defects.

[0088] The above characterization results prove that the boron nitride obtained in Example 1 is oxygen-doped boron nitride.

[0089] Further, vertical conductivity tests were performed on Example 1 and Comparative Example 1. If the few-layer boron nitride film is transferred to other substrates for testing, it is easy to damage the boron nitride during the transfer process, thereby introducing many unnecessary factors. Therefore, in-situ conductive atomic force microscopy (CAFM) tests were directly performed on the copper foil, and the test method was as follows:

[0090] The copper foil on which the boron nitride had been grown was cut into a size of about 1 cm*1 cm, and then connected to the power loop of the CAFM, while a certain voltage was applied through the conductive probe, and the vertical direction current value through the boron nitride film was recorded, completing the area mapping current test or single-point I-V test of the boron nitride. The specific results are shown in Figures 18-23

[0091] As shown in Figure 18 and Figure 21 It can be seen that the first layer of Example 1 completely covers the copper foil, and the second and third layers exhibit a small amount of triangles. Here, both Example 1 and Comparative Example 1 selected for vertical current testing are three-layer structures, and the current distribution histogram of the selected area is shown in Figure 19 and Figure 22 As can be clearly seen, under the premise of the same number of layers of boron nitride, the vertical current of Example 1 is significantly greater than that of Comparative Example 1, indicating that the interlayer vertical current of the two-dimensional material is enhanced, and the interlayer vertical transport channel is formed.

[0092] The selected area was also subjected to single-point I-V testing, and the results are shown in Figure 20 and Figure 23 The results are similar to the current distribution histogram, and compared with Comparative Example 1, not only does the current corresponding to 3V voltage in Example 1 increase, but also the opening voltage threshold of the I-V curve decreases accordingly, indicating that the vertical conductive capacity of Example 1 increases.

[0093] Further, a double-layer boron nitride oxygen-doped model was established using Vesta software, and the difference charge density distribution diagram of the activated charge state (+1) and the neutral charge state (0) of the oxygen-doped boron nitride was obtained through structure relaxation, self-consistent operation, etc., as shown in Figure 24 ​As shown, partial density of states diagrams for both high-concentration oxygen-doped boron nitride and intrinsic boron nitride were obtained simultaneously, as shown in the figure. Figure 25 As shown, it is clear that the p of high concentrations of oxygen impurities can be determined. z Orbital energy and intrinsic atom p z The orbitals undergo intense hybridization, activating the intrinsic atom p. z The vertical extension of the track connects to form interlayer vertical electric transport channels, thereby effectively enhancing the interlayer vertical current of the two-dimensional material.

[0094] Depend on Figure 26 It is possible to determine the O content in a boron-rich environment. N The formation energy is significantly lower than that in a boron-poor environment, indicating that O dopants are easier to incorporate.

[0095] In summary, compared with existing technologies, such as Figure 27 As shown, the method for preparing a two-dimensional material with interlayer vertical electric transport channels provided by the present invention involves coupling doping within the two-dimensional material, allowing the doped atoms to interact with the intrinsic atoms via p-coupling. z The orbitals undergo intense hybridization, activating the intrinsic atom p. z The vertical extension of the tracks connects to form interlayer vertical electric transport channels, thereby effectively enhancing the interlayer vertical current in two-dimensional materials. This further broadens the application of two-dimensional materials in vertical devices.

[0096] Furthermore, those skilled in the art should understand that although many problems exist in the prior art, each embodiment or technical solution of the present invention can be improved in only one or a few aspects, without necessarily solving all the technical problems listed in the prior art or the background art simultaneously. Those skilled in the art should understand that any content not mentioned in a claim should not be construed as a limitation on that claim.

[0097] Although terms such as precursor, dopant source, and substrate are frequently used herein, the possibility of using other terms is not excluded. These terms are used merely for the convenience of describing and explaining the essence of the invention; interpreting them as any additional limitation would contradict the spirit of the invention. The terms "first," "second," etc. (if present) in the specification, claims, and accompanying drawings of the embodiments of the invention are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence.

[0098] It should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, and are not intended to limit the present application; although the present application has been described in detail with reference to the above embodiments, those skilled in the art should understand that the technical solutions recorded in the above embodiments can be modified, or some or all of the technical features can be replaced by equivalents; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A method of preparing a two-dimensional material having an interlayer vertical electrical transport channel, the method comprising: The steps are as follows: A first intrinsic main atom supersaturated environment is created in a gaseous state, while a second intrinsic main atom is in a non-saturated state; Introducing vertical p into the airflow path z The doping source of the valence electron orbital replaces the unsaturated second intrinsic principal atom, and the doping source interacts with the p-type of the saturated first intrinsic principal atom. z The orbitals undergo strong coupling hybridization, activating the p-axis of the saturated first intrinsic principal atom. z The vertical extension of the track forms a vertical electrical transport channel between layers; The first intrinsic main atom supersaturated environment is created by: A chemical vapor deposition system is provided, including an outer tube and a small tube with an independent gas path; the outlet end of the small tube is provided with a single-port tube, the outlet end of the small tube extends into the single-port tube, the inner diameter of the single-port tube is larger than the outer diameter of the small tube, a quartz rod is arranged in the small tube, and the outlet end of the quartz rod extends to the bottom of the single-port tube; the outlet end of the small tube, the outlet end of the quartz rod, and the inlet end of the single-port tube form a reaction chamber, and the reaction chamber is provided with a growth substrate; A prepared solution containing the first intrinsic main atom of the two-dimensional material is coated on the surface of the outlet end of the quartz rod; when growth is required, the quartz rod is pushed into the single-port tube to create an intrinsic main atom supersaturated environment.

2. The method of claim 1, wherein, p z The track coupling doping process is: An precursor temperature zone is provided inside the outer tube, a dopant source temperature zone is provided inside the small tube, and a growth temperature zone is provided inside the single port tube. The substrate is placed in the growth temperature zone, and the vacuum is made lower than 10 -4 torr. The substrate is annealed at 1000-1200°C in a protective gas atmosphere before growth; When growing, the temperature of the precursor temperature zone is 80-120 DEG C, the temperature of the dopant source temperature zone is 400-800 DEG C, and the temperature of the growth temperature zone is 1000-1200 DEG C; the decomposition products of the precursor in the precursor temperature zone and the decomposition products of the dopant source in the dopant source temperature zone are respectively sent to the substrate in the reaction chamber through different gas paths for growth, so that the dopant atoms of the dopant source form a p z Orbital coupling doping.

3. The method of claim 1, wherein: The two-dimensional material is any one of two-dimensional hexagonal boron nitride, two-dimensional transition metal sulfide, and two-dimensional oxide.

4. The method of claim 2, wherein: The growth substrate is a metal substrate or a semiconductor substrate.

5. The method of claim 4, wherein: The substrate is inserted into the single-port tube in the form of a multi-layer coiled hollow column.

6. The method of claim 1, wherein: When the two-dimensional material is boron nitride, the precursor is at least one of borane ammonia and borazine.

7. The method of claim 1, wherein: When the two-dimensional material is boron nitride, the doping source element composition includes any one of Mg, Zn, and O.

8. The method of claim 1, wherein: The protective gas includes hydrogen and argon, and the carrier gas includes hydrogen and argon.

9. A two-dimensional material, characterized in that, The two-dimensional material with interlayer vertical electric transport channels is prepared by the method of any one of claims 1-8.

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