A semiconductor laser element

Abstract

The application provides a semiconductor laser element, which comprises, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper confinement layer; a topological Dirac electron point layer is arranged between the upper waveguide layer and the electron blocking layer, and a topological Dirac electron point layer is arranged between the electron blocking layer and the upper confinement layer; the active layer is a periodic structure composed of a well layer and a barrier layer, and the number of periods is 3 >= m >= 1; the well layer is any one or any combination of InGaN, InN, AlInN and GaN, and the thickness is 10-80 angstrom meters; and the barrier layer is any one or any combination of GaN, AlGaN, AlInGaN, AlN and AlInN, and the thickness is 10-120 angstrom meters. The semiconductor laser element provided by the application can generate non-local effects between electrons and electrons through the cage lattice structure of the arranged topological Dirac electron point layer, and can inhibit the charge density wave and the quantum limited Stark effect.

Description

A semiconductor laser element Technical Field

[0001] This invention relates to the field of semiconductor optoelectronic device technology, and in particular to a semiconductor laser element. Background Technology

[0002] Lasers are widely used in laser displays, laser TVs, laser projectors, communications, medical applications, weaponry, guidance, ranging, spectral analysis, metal processing and cutting, precision welding, high-density optical storage, submarine communications, atomic clocks, and quantum sensors. There are many types of lasers, and they can be classified in various ways, mainly including solid-state, gas, liquid, semiconductor, and dye lasers. Compared with other types of lasers, all-solid-state semiconductor lasers have advantages such as small size, high efficiency, high brightness, good directionality, light weight, good stability, long lifespan, simple and compact structure, and miniaturization.

[0003] There are significant differences between lasers and nitride semiconductor light-emitting diodes (LEDs): 1) Lasers operate on the principle of stimulated emission, while LEDs operate on the principle of spontaneous emission. Lasers are generated by stimulated emission of charge carriers, exhibiting a narrow half-width of the spectrum, excellent monochromaticity, and very high brightness; a single laser can achieve output power in the W range. In contrast, nitride semiconductor LEDs operate on spontaneous emission, exhibiting a wide half-width of the spectrum, lacking monochromaticity, and a single LED's output power is in the mW range. 2) Lasers operate at current densities reaching kA / cm², more than two orders of magnitude higher than nitride LEDs. This results in stronger electron leakage, more severe Auger recombination, stronger polarization effects, and more severe electron-hole mismatch, leading to more... 3) Severe efficiency degradation due to the Droop effect; 4) Spontaneous transition radiation in LEDs, without external influence, is incoherent light transitioning from a high energy level to a low energy level, while lasers are stimulated transition radiation, where the energy of the induced photon must be equal to the energy difference of the electron transition, producing coherent light between the photon and the induced photon; 5) Different principles: LEDs emit radiative recombination light under external voltage by electron-hole transitions to quantum wells or pn junctions, while lasers require lasing conditions to be met, which must satisfy the inversion distribution of charge carriers in the active region. The stimulated emission light oscillates back and forth in the resonant cavity, and its propagation in the gain medium amplifies the light. The threshold condition must be met so that the gain is greater than the loss, and finally, laser light is output.

[0004] Nitride semiconductor lasers suffer from the following problems: 1) Large internal lattice mismatch and strain lead to strong polarization effects, and the strong QCSE quantum confinement Stark effect limits the improvement of laser electro-lasing gain; 2) High optical waveguide absorption loss, inherent carbon impurities in p-type semiconductors can compensate for acceptors and destroy p-type structures, the low ionization rate of p-type doping, and a large number of unionized Mg acceptor impurities can lead to increased internal optical loss, and the refractive index dispersion and confinement factor of the laser decrease with increasing wavelength, resulting in a decrease in laser mode gain; 3) p-type semiconductors... Mg has a high acceptor activation energy and low ionization efficiency. The hole concentration is much lower than the electron concentration, and the hole mobility is much lower than the electron mobility. Furthermore, the quantum well polarization field raises the hole injection barrier and causes hole overflow from the active layer. This results in uneven hole injection and low efficiency, leading to severe electron-hole asymmetry and mismatch in the quantum well, electron leakage, and carrier delocalization. Hole transport in the quantum well becomes more difficult, resulting in uneven carrier injection and gain. Simultaneously, the laser gain spectrum broadens, and the peak gain decreases, leading to an increase in the laser threshold current and a decrease in slope efficiency. 4) The increased valence band difference in the laser makes hole transport in the quantum well more difficult, resulting in uneven carrier injection and gain. After laser lasing, the carrier concentration in the multi-quantum-well active region saturates, the bipolar conductivity effect weakens, and the series resistance of the laser increases, leading to an increase in laser voltage. Summary of the Invention

[0005] The present invention aims to provide a semiconductor laser element to solve the above-mentioned technical problems. By forming a slope efficiency enhancement structure on the active layer, the stress mismatch of the active layer is reduced, the quantum confinement Stark effect is reduced, and the carrier injection efficiency and uniformity of the laser element are improved, the gain spectrum of the laser element is narrowed, the thermal stability is improved, and the slope efficiency is further improved.

[0006] To address the aforementioned technical problems, the present invention provides a semiconductor laser element comprising, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper confinement layer; a topological Dirac electron dot layer is disposed between the upper waveguide layer and the electron blocking layer, and a topological Dirac electron dot layer is disposed between the electron blocking layer and the upper confinement layer.

[0007] In the above scheme, the cage-like lattice structure of the topological Dirac electron dot layer can generate nonlocal effects between electrons, suppressing charge density waves and quantum confinement Stark effects.

[0008] Furthermore, the active layer is a periodic structure composed of a well layer and a barrier layer, wherein the number of periods is 3 ≥ m ≥ 1; it should also be noted that the well layer is any one or any combination of InGaN, InN, AlInN, and GaN, with a thickness of 10 to 80 angstroms; the barrier layer is any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 10 to 120 angstroms.

[0009] Furthermore, the topological Dirac electron dot layer is CsV3Sb5@BAs, KV3Sb5@BAs, RbV3Sb5@BAs, or LaFe4Sb 12 Two-dimensional cage-like superlattices of any one or any combination of @BAs, AsP@MoS2, and PbSe@MoS2.

[0010] In the above scheme, any combination of the topological Dirac electron point layers includes the following binary combinations of two-dimensional cage-like superlattices: CsV3Sb5@BAs / KV3Sb5@BAs, CsV3Sb5@BAs / RbV3Sb5@BAs, CsV3Sb5@BAs / LaFe4Sb 12 @BAs, CsV3Sb5@BAs / AsP@MoS2, CsV3Sb5@BAs / PbSe@MoS2, KV3Sb5@BAs / RbV3Sb5@BAs, KV3Sb5@BAs / LaFe4Sb 12 @BAs, KV3Sb5@BAs / AsP@MoS2, KV3Sb5@BAs / PbSe@MoS2, RbV3Sb5@BAs / LaFe4Sb 12 @BAs, RbV3Sb5@BAs / AsP@MoS2, RbV3Sb5@BAs / PbSe@MoS2, LaFe4Sb 12 @BAs / AsP@MoS2, LaFe4Sb 12 @BAs / PbSe@MoS2, AsP@MoS2 / PbSe@MoS2.

[0011] In the above scheme, the following settings can also be made: any combination of the topological Dirac electron dot layer 107 includes the following ternary combinations of two-dimensional cage-like superlattices: CsV3Sb5@BAs / KV3Sb5@BAs / RbV3Sb5@BAs, CsV3Sb5@BAs / KV3Sb5@BAs / LaFe4Sb 12 @BAs, CsV3Sb5@BAs / KV3Sb5@BAs / AsP@MoS2, CsV3Sb5@BAs / KV3Sb5@BAs / PbSe@MoS2, CsV3Sb5@BAs / RbV3Sb5@BAs / LaFe4Sb12 @BAs, CsV3Sb5@BAs / RbV3Sb5@BAs / AsP@MoS2, CsV3Sb5@BAs / RbV3Sb5@BAs / PbSe@MoS2, CsV3Sb5@BAs / LaFe4Sb 12 @BAs / AsP@MoS2, CsV3Sb5@BAs / LaFe4Sb 12 @BAs / PbSe@MoS2, CsV3Sb5@BAs / AsP@MoS2 / PbSe@MoS2, KV3Sb5@BAs / RbV3Sb5@BAs / LaFe4Sb 12 @BAs, KV3Sb5@BAs / RbV3Sb5@BAs / AsP@MoS2, KV3Sb5@BAs / RbV3Sb5@BAs / PbSe@MoS2, KV3Sb5@BAs / LaFe4Sb 12 @BAs / AsP@MoS2, KV3Sb5@BAs / LaFe4Sb 12 @BAs / PbSe@MoS2, KV3Sb5@BAs / AsP@MoS2 / PbSe@MoS2, RbV3Sb5@BAs / LaFe4Sb 12 @BAs / AsP@MoS2, RbV3Sb5@BAs / LaFe4Sb 12 @BAs / PbSe@MoS2, RbV3Sb5@BAs / AsP@MoS2 / PbSe@MoS2.

[0012] In the above scheme, the two-dimensional cage-like superlattice of the topological Dirac electron point layer can also be configured as follows: CsV3Sb5@BAs / KV3Sb5@BAs / RbV3Sb5@BAs / LaFe4Sb 12 @BAs / AsP@MoS2, CsV3Sb5@BAs / KV3Sb5@BAs / RbV3Sb5@BAs / LaFe4Sb 12 @BAs / PbSe@MoS2, CsV3Sb5@BAs / KV3Sb5@BAs / RbV3Sb5@BAs / AsP@MoS2 / PbSe@MoS2, CsV3Sb5@BAs / KV3Sb5@BAs / LaFe4Sb 12 @BAs / AsP@MoS2 / PbSe@MoS2, CsV3Sb5@BAs / RbV3Sb5@BAs / LaFe4Sb 12 @BAs / AsP@MoS2 / PbSe@MoS2, KV3Sb5@BAs / RbV3Sb5@BAs / LaFe4Sb 12@BAs / AsP@MoS2 / PbSe@MoS2, CsV3Sb5@BAs / KV3Sb5@BAs / RbV3Sb5@BAs / LaFe4Sb 12 @BAs / AsP@MoS2 / PbSe@MoS2.

[0013] Furthermore, the thickness of the topological Dirac electron dot layer is 5 to 5000 angstroms.

[0014] In the above scheme, the lower confinement layer is any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, and AlInN, with a thickness of 50–5000 nm and a Si doping concentration of 1E18–1E20 cm⁻¹. -3 .

[0015] In the above scheme, the lower waveguide layer and the upper waveguide layer are any one or any combination of GaN, InGaN, and AlInGaN, with a thickness of 50–1000 nm and a Si doping concentration of 1E16–5E19 cm⁻¹. -3 .

[0016] Furthermore, the electron blocking layer and the upper confinement layer are any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 20–1000 nm and a Mg doping concentration of 1E18–1E20 cm⁻¹. -3 .

[0017] Furthermore, the substrate includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0018] In the above scheme, by setting a topological Dirac electron dot layer between the upper waveguide layer and the electron blocking layer, and between the electron blocking layer and the upper confinement layer, it is possible to induce a flat electron band that causes strong charge fluctuations, enhance the hole injection efficiency, enhance the radiative recombination efficiency of the electron-hole wave function in the active layer, and introduce Dirac electron dots in the band topology to increase the confinement factor and reduce internal loss, thereby reducing the excitation threshold of the laser element and improving the optical power and slope efficiency of the laser element. Attached Figure Description

[0019] Figure 1 is a schematic diagram of a semiconductor laser element structure provided in an embodiment of the present invention;

[0020] Wherein: 100, substrate; 101, lower confinement layer; 102, lower waveguide layer; 103, active layer; 104, upper waveguide layer; 105, electron blocking layer; 106, upper confinement layer; 107, topological Dirac electron dot layer. Detailed Implementation

[0021] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0022] Please refer to Figure 1. This embodiment provides a semiconductor laser element, which, from bottom to top, includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106. A topological Dirac electron dot layer 107 is disposed between the upper waveguide layer 104 and the electron blocking layer 105, and a topological Dirac electron dot layer 107 is disposed between the electron blocking layer 105 and the upper confinement layer 106.

[0023] In this embodiment, the kake-mesh lattice structure of the topological Dirac electron dot layer 107 can generate nonlocal effects between electrons, suppressing charge density waves and quantum confinement Stark effects.

[0024] It should be further noted that the active layer 103 is a periodic structure composed of a well layer and a barrier layer, wherein the number of periods is 3≥m≥1; it should also be noted that the well layer is any one or any combination of InGaN, InN, AlInN, and GaN, with a thickness of 10 to 80 angstroms; the barrier layer is any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 10 to 120 angstroms.

[0025] It should be further noted that the topological Dirac electron dot layer 107 is CsV3Sb5@BAs, KV3Sb5@BAs, RbV3Sb5@BAs, or LaFe4Sb 12 Two-dimensional cage-like superlattices of any one or any combination of @BAs, AsP@MoS2, and PbSe@MoS2.

[0026] Specifically, any combination of the topological Dirac electron dot layer 107 includes the following binary combinations of two-dimensional cage-like superlattices: CsV3Sb5@BAs / KV3Sb5@BAs, CsV3Sb5@BAs / RbV3Sb5@BAs, CsV3Sb5@BAs / LaFe4Sb12 @BAs, CsV3Sb5@BAs / AsP@MoS2, CsV3Sb5@BAs / PbSe@MoS2, KV3Sb5@BAs / RbV3Sb5@BAs, KV3Sb5@BAs / LaFe4Sb 12 @BAs, KV3Sb5@BAs / AsP@MoS2, KV3Sb5@BAs / PbSe@MoS2, RbV3Sb5@BAs / LaFe4Sb 12 @BAs, RbV3Sb5@BAs / AsP@MoS2, RbV3Sb5@BAs / PbSe@MoS2, LaFe4Sb 12 @BAs / AsP@MoS2, LaFe4Sb 12 @BAs / PbSe@MoS2, AsP@MoS2 / PbSe@MoS2.

[0027] Specifically, the following settings can also be made: any combination of the topological Dirac electron dot layer 107 includes the following ternary combinations of two-dimensional cage-like superlattices: CsV3Sb5@BAs / KV3Sb5@BAs / RbV3Sb5@BAs, CsV3Sb5@BAs / KV3Sb5@BAs / LaFe4Sb 12 @BAs, CsV3Sb5@BAs / KV3Sb5@BAs / AsP@MoS2, CsV3Sb5@BAs / KV3Sb5@BAs / PbSe@MoS2, CsV3Sb5@BAs / RbV3Sb5@BAs / LaFe4Sb 12 @BAs, CsV3Sb5@BAs / RbV3Sb5@BAs / AsP@MoS2, CsV3Sb5@BAs / RbV3Sb5@BAs / PbSe@MoS2, CsV3Sb5@BAs / LaFe4Sb 12 @BAs / AsP@MoS2, CsV3Sb5@BAs / LaFe4Sb 12 @BAs / PbSe@MoS2, CsV3Sb5@BAs / AsP@MoS2 / PbSe@MoS2, KV3Sb5@BAs / RbV3Sb5@BAs / LaFe4Sb 12 @BAs, KV3Sb5@BAs / RbV3Sb5@BAs / AsP@MoS2, KV3Sb5@BAs / RbV3Sb5@BAs / PbSe@MoS2, KV3Sb5@BAs / LaFe4Sb 12 @BAs / AsP@MoS2, KV3Sb5@BAs / LaFe4Sb 12@BAs / PbSe@MoS2, KV3Sb5@BAs / AsP@MoS2 / PbSe@MoS2, RbV3Sb5@BAs / LaFe4Sb 12 @BAs / AsP@MoS2, RbV3Sb5@BAs / LaFe4Sb 12 @BAs / PbSe@MoS2, RbV3Sb5@BAs / AsP@MoS2 / PbSe@MoS2.

[0028] Specifically, the two-dimensional cage-like superlattice of the topological Dirac electron point layer 107 can also be configured as follows: CsV3Sb5@BAs / KV3Sb5@BAs / RbV3Sb5@BAs / LaFe4Sb 12 @BAs / AsP@MoS2, CsV3Sb5@BAs / KV3Sb5@BAs / RbV3Sb5@BAs / LaFe4Sb 12 @BAs / PbSe@MoS2, CsV3Sb5@BAs / KV3Sb5@BAs / RbV3Sb5@BAs / AsP@MoS2 / PbSe@MoS2, CsV3Sb5@BAs / KV3Sb5@BAs / LaFe4Sb 12 @BAs / AsP@MoS2 / PbSe@MoS2, CsV3Sb5@BAs / RbV3Sb5@BAs / LaFe4Sb 12 @BAs / AsP@MoS2 / PbSe@MoS2, KV3Sb5@BAs / RbV3Sb5@BAs / LaFe4Sb 12 @BAs / AsP@MoS2 / PbSe@MoS2, CsV3Sb5@BAs / KV3Sb5@BAs / RbV3Sb5@BAs / LaFe4Sb 12 @BAs / AsP@MoS2 / PbSe@MoS2.

[0029] Furthermore, the thickness of the topological Dirac electron dot layer 107 is 5 to 5000 angstroms.

[0030] Specifically, the lower confinement layer is any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, and AlInN, with a thickness of 50–5000 nm and a Si doping concentration of 1E18–1E20 cm⁻¹. -3 .

[0031] Specifically, the lower waveguide layer and the upper waveguide layer are any one or any combination of GaN, InGaN, and AlInGaN, with a thickness of 50–1000 nm and a Si doping concentration of 1E16–5E19 cm⁻¹.-3 .

[0032] It should also be noted that the electron blocking layer and the upper confinement layer are any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 20–1000 nm and a Mg doping concentration of 1E18–1E20 cm⁻¹. -3 .

[0033] It should also be noted that the substrate includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0034] In this embodiment, by setting a topological Dirac electron dot layer 107 between the upper waveguide layer 104 and the electron blocking layer 105, and between the electron blocking layer 105 and the upper confinement layer 106, a flat electron band can be induced to cause strong charge fluctuations, enhance hole injection efficiency, enhance the radiative recombination efficiency of the electron-hole wave function in the active layer, and introduce Dirac electron dots of band topology to increase the confinement factor and reduce internal loss, thereby reducing the excitation threshold of the laser element and improving the optical power and slope efficiency of the laser element.

[0035] Furthermore, in order to highlight the technical advantages of this technical solution, this embodiment compares the performance of the laser element proposed in this invention with that of traditional laser elements. The comparison results can be found in Table 1.

[0036] Table 1. Performance Comparison of the Laser Element of the Present Invention with Traditional Laser Element

[0037]

[0038] Comparative analysis revealed that the laser element proposed in this invention can effectively improve the optical power and slope efficiency of the laser element, increasing the slope efficiency by 90% and the optical power by 98%. At the same time, it increases the confinement factor and reduces internal losses, thereby lowering the excitation threshold of the laser element, suppressing charge density waves and the quantum confinement Stark effect. All beneficial properties are greatly improved, and all losses are effectively mitigated, making it easy to promote and use in the industry.

[0039] The above description represents the preferred embodiments of the present invention. It should be noted that those skilled in the art can make various improvements and modifications without departing from the principles of the present invention, and these improvements and modifications are also considered to be within the scope of protection of the present invention.

Claims

1. A semiconductor laser element, comprising, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper confinement layer; characterized in that, A topological Dirac electron dot layer is disposed between the upper waveguide layer and the electron blocking layer, and a topological Dirac electron dot layer is disposed between the electron blocking layer and the upper confinement layer; the topological Dirac electron dot layer is CsV3Sb5@BAs, KV3Sb5@BAs, RbV3Sb5@BAs, or LaFe4Sb 12 The structure of the topological Dirac electron dot layer is a two-dimensional cage-like superlattice, consisting of any one or any combination of @BAs, AsP@MoS2, and PbSe@MoS2.

2. A semiconductor laser element according to claim 1, characterized in that, The active layer is a periodic structure composed of a well layer and a barrier layer, with a period number of 3 ≥ m ≥ 1; the well layer is any one or any combination of InGaN, InN, AlInN, and GaN, with a thickness of 10~80 angstroms; the barrier layer is any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 10~120 angstroms.

3. A semiconductor laser element according to claim 1, characterized in that, Any combination of the topological Dirac electron dot layers includes the following binary combinations of two-dimensional cage-like superlattices: CsV3Sb5@BAs / KV3Sb5@BAs, CsV3Sb5@BAs / RbV3Sb5@BAs, CsV3Sb5@BAs / LaFe4Sb 12 @BAs, CsV3Sb5@BAs / AsP@MoS2, CsV3Sb5@BAs / PbSe@MoS2, KV3Sb5@BAs / RbV3Sb5@BAs, KV3Sb5@BAs / LaFe4Sb 12 @BAs, KV3Sb5@BAs / AsP@MoS2, KV3Sb5@BAs / PbSe@MoS2, RbV3Sb5@BAs / LaFe4Sb 12 @BAs, RbV3Sb5@BAs / AsP@MoS2, RbV3Sb5@BAs / PbSe@MoS2, LaFe4Sb 12 @BAs / AsP@MoS2, LaFe4Sb 12 @BAs / PbSe@MoS2, AsP@MoS2 / PbSe@MoS2.

4. A semiconductor laser element according to claim 1, characterized in that, Any combination of the topological Dirac electron point layers includes the following ternary combinations of two-dimensional cage-like superlattices: CsV3Sb5@BAs / KV3Sb5@BAs / RbV3Sb5@BAs, CsV3Sb5@BAs / KV3Sb5@BAs / LaFe4Sb 12 @BAs, CsV3Sb5@BAs / KV3Sb5@BAs / AsP@MoS2, CsV3Sb5@BAs / KV3Sb5@BAs / PbSe@MoS2, CsV3Sb5@BAs / RbV3Sb5@BAs / LaFe4Sb 12 @BAs, CsV3Sb5@BAs / RbV3Sb5@BAs / AsP@MoS2, CsV3Sb5@BAs / RbV3Sb5@BAs / PbSe@MoS2, CsV3Sb5@BAs / LaFe4Sb 12 @BAs / AsP@MoS2, CsV3Sb5@BAs / LaFe4Sb 12 @BAs / PbSe@MoS2, CsV3Sb5@BAs / AsP@MoS2 / PbSe@MoS2, KV3Sb5@BAs / RbV3Sb5@BAs / LaFe4Sb 12 @BAs, KV3Sb5@BAs / RbV3Sb5@BAs / AsP@MoS2, KV3Sb5@BAs / RbV3Sb5@BAs / PbSe@MoS2, KV3Sb5@BAs / LaFe4Sb 12 @BAs / AsP@MoS2, KV3Sb5@BAs / LaFe4Sb 12 @BAs / PbSe@MoS2, KV3Sb5@BAs / AsP@MoS2 / PbSe@MoS2, RbV3Sb5@BAs / LaFe4Sb 12 @BAs / AsP@MoS2, RbV3Sb5@BAs / LaFe4Sb 12 @BAs / PbSe@MoS2, RbV3Sb5@BAs / AsP@MoS2 / PbSe@MoS2.

5. A semiconductor laser element according to claim 1, characterized in that, The lower confinement layer is any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, and AlInN, with a thickness of 50~5000 nm and a Si doping concentration of 1E18~1E20 cm⁻¹. -3 The lower and upper waveguide layers are any one or any combination of GaN, InGaN, and AlInGaN, with a thickness of 50~1000nm and a Si doping concentration of 1E16~5E19 cm⁻¹. -3 .

6. A semiconductor laser element according to claim 1, characterized in that, The electron blocking layer and the upper confinement layer are any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 20~1000 nm and a Mg doping concentration of 1E18~1E20 cm⁻¹. -3 .

7. A semiconductor laser element according to claim 1, characterized in that, The substrates include sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrates, sapphire / AlN composite substrates, and sapphire / SiN composite substrates. x Sapphire / SiO2 / SiN x The composite substrate, or any one of the following: magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

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