Adjustable phase shifter and electronic device

Abstract

The application provides a tunable phase shifter and an electronic device. The tunable phase shifter comprises a dielectric layer between a first substrate and a second substrate; a first electrode arranged on the first substrate; and a second electrode arranged on the second substrate. The second electrode comprises at least one patch electrode arranged on the second substrate. A projection of the first electrode on the second substrate covers at least part of a projection of the dielectric layer on the second substrate and at least part of a projection of the patch electrode on the second substrate. The first electrode, the dielectric layer and the at least one patch electrode form at least one variable capacitor. This structure facilitates voltage application, does not require additional electrodes and has little effect on the performance of the phase shifter. The capacitance of the variable capacitor can be increased by changing the thickness of the first electrode and / or the patch electrode. When the dielectric constant of the liquid crystal in the variable capacitor changes, the phase shifter can obtain a larger phase shift.

Description

Technical Field

[0001] This application relates to the field of communication technology, specifically to an adjustable phase shifter and electronic device. Background Technology

[0002] A phase shifter is a device that can adjust the phase of a wave, and it has wide applications in radar, missile attitude control, accelerators, communications, and instrumentation. Commonly used phase shifters include varactor diode phase shifters, ferrite phase shifters, PIN diode phase shifters, MEMS (Micro-Electro-Mechanical System) phase shifters, and adjustable phase shifters.

[0003] In the case of an adjustable phase shifter, the dielectric constant of the dielectric layer can be controlled by applying voltage. Therefore, the dielectric constant can change continuously with different applied bias voltages, thereby enabling continuous phase shift adjustment.

[0004] However, the phase shift achieved by existing coplanar waveguide (CPW) phase shifters is limited, which restricts their application. Summary of the Invention

[0005] To address the aforementioned issues, this application provides an adjustable phase shifter and electronic device that can solve the technical problem of limited phase shift in existing adjustable phase shifters.

[0006] In a first aspect, this application provides an adjustable phase shifter, comprising:

[0007] A first substrate and a second substrate arranged opposite to each other;

[0008] A dielectric layer with adjustable dielectric constant is located between the first substrate and the second substrate;

[0009] The first electrode is disposed on the first substrate;

[0010] The second electrode is disposed on the second substrate;

[0011] The second electrode includes at least one patch electrode spaced apart on the second substrate, and the orthographic projection of the first electrode on the second substrate at least covers a portion of the dielectric layer and a portion of the orthographic projection of the patch electrode on the second substrate.

[0012] In some embodiments, the adjustable phase shifter described above further includes a first sub-electrode and a second sub-electrode spaced apart on the second substrate;

[0013] Wherein, the orthogonal projection of the at least one patch electrode on the second substrate falls between the orthogonal projections of the first sub-electrode and the second sub-electrode on the second substrate.

[0014] In some embodiments, in the adjustable phase shifter described above, each of the patch electrodes is connected to the first sub-electrode and the second sub-electrode via a corresponding connection portion.

[0015] In some embodiments, in the adjustable phase shifter described above, the orthogonal projection of the first electrode on the second substrate does not cover the orthogonal projections of the first sub-electrode and the second sub-electrode on the second substrate.

[0016] In some embodiments, in the adjustable phase shifter described above, the second electrode is a ground electrode.

[0017] In some embodiments, the dielectric layer in the adjustable phase shifter described above includes a liquid crystal layer.

[0018] In some embodiments, in the adjustable phase shifter described above, the at least one patch electrode includes at least one first patch electrode and at least one second patch electrode and at least one third patch electrode respectively disposed on both sides of the at least one first patch electrode;

[0019] Wherein, in the at least one second patch electrode, the area of ​​the overlapping region of each second patch electrode and the first electrode on the second substrate gradually increases or gradually decreases along the extending direction of the orthogonal projection of the at least one second patch electrode on the second substrate.

[0020] In the at least one third patch electrode, the area of ​​the overlapping region of each third patch electrode and the orthographic projection of the first electrode on the second substrate gradually increases or gradually decreases along the extending direction of the orthographic projection of the at least one third patch electrode on the second substrate.

[0021] In some embodiments, in the adjustable phase shifter described above, the overlapping areas of the at least one second patch electrode and the orthographic projection of the first electrode on the second substrate, and the overlapping areas of the at least one third patch electrode and the orthographic projection of the first electrode on the second substrate, are symmetrically disposed on both sides of the orthographic projection of the at least one first patch electrode on the second substrate.

[0022] In some embodiments, in the adjustable phase shifter described above, the shape of the overlapping area of ​​the patch electrode and the first electrode projected onto the second substrate is square, circular, or elliptical.

[0023] In some embodiments, in the adjustable phase shifter described above, the first electrode is disposed on the side of the first substrate close to the second substrate;

[0024] The second electrode is disposed on the side of the second substrate close to the first substrate.

[0025] In some embodiments, in the adjustable phase shifter described above, the thickness of the first electrode is the same as the thickness of the first sub-electrode and the second sub-electrode along a direction perpendicular to the surface of the second substrate near the first substrate.

[0026] In some embodiments, in the adjustable phase shifter described above, the thickness of the connection portion is the same as the thickness of the patch electrode, the first sub-electrode, or the second sub-electrode in a direction perpendicular to the surface of the second substrate near the first substrate.

[0027] In a second aspect, this application provides an electronic device including an adjustable phase shifter as described in any one of the first aspects.

[0028] By adopting the above technical solution, at least the following technical effects can be achieved:

[0029] This application provides an adjustable phase shifter and electronic device. The adjustable phase shifter includes a first substrate and a second substrate disposed opposite to each other; a dielectric layer with an adjustable dielectric constant located between the first substrate and the second substrate; a first electrode disposed on the first substrate; and a second electrode disposed on the second substrate. The second electrode includes at least one patch electrode spaced apart on the second substrate. The orthographic projection of the first electrode on the second substrate at least covers a portion of the dielectric layer and a portion of the orthographic projection of the patch electrode on the second substrate. The first electrode, the dielectric layer, and the at least one patch electrode form at least one variable capacitor. This structure facilitates voltage application, eliminates the need for additional electrodes, and has minimal impact on the phase shifter's performance. The capacitance value of the variable capacitor can be increased by changing the thickness of the first electrode and / or the patch electrode. When the dielectric constant of the dielectric layer within the variable capacitor changes, the phase shifter can achieve a larger phase shift. Attached Figure Description

[0030] The accompanying drawings are provided to further illustrate the present application and form part of the specification. They are used together with the following detailed description to explain the present application, but do not constitute a limitation thereof. In the drawings:

[0031] Figure 1 This is a front top view schematic diagram of an adjustable phase shifter shown in an exemplary embodiment of this application;

[0032] Figure 2a yes Figure 1 A schematic diagram of the cross-sectional structure of the adjustable phase shifter along A-A';

[0033] Figure 2b yes Figure 1 A schematic diagram of the cross-sectional structure of the adjustable phase shifter along B-B';

[0034] Figure 3 yes Figure 1 A top-view schematic diagram of the front of the second electrode of the adjustable phase shifter;

[0035] Figure 4 This is a schematic cross-sectional view of another second electrode structure shown in an exemplary embodiment of this application;

[0036] Figure 5 This is a schematic cross-sectional view of another second electrode structure shown in an exemplary embodiment of this application;

[0037] Figure 6 This is a schematic diagram illustrating the variation of the reflection coefficient of an adjustable phase shifter (both the thickness of the first and second electrodes is 2 μm) with the effective dielectric constant of the adjustable dielectric layer, as shown in an exemplary embodiment of this application.

[0038] Figure 7 This is a schematic diagram illustrating the variation of the transmission coefficient of an adjustable phase shifter (both the thickness of the first and second electrodes is 2 μm) with the effective dielectric constant of the adjustable dielectric layer, as shown in an exemplary embodiment of this application.

[0039] Figure 8 This is a schematic diagram illustrating the change of the phase angle of an electromagnetic wave in an adjustable phase shifter (both the thickness of the first and second electrodes is 2 μm) as a function of the effective dielectric constant of the adjustable dielectric layer, according to an exemplary embodiment of this application.

[0040] Figure 9 This is a schematic diagram illustrating the change of the phase angle of the electromagnetic wave in another adjustable phase shifter (the thickness of the first electrode is 2 μm and the thickness of the patch electrode in the second electrode is 2.5 μm) as a function of the effective dielectric constant of the adjustable dielectric layer, as shown in an exemplary embodiment of this application.

[0041] Figure 10 This is a schematic diagram illustrating the change of the phase angle of the electromagnetic wave with the effective dielectric constant of the adjustable dielectric layer in another adjustable phase shifter (the thickness of the first electrode is 2 μm and the thickness of the patch electrode in the second electrode is 3 μm) according to an exemplary embodiment of this application.

[0042] Figure 11 This is a schematic diagram illustrating the variation of the reflection coefficient of another adjustable phase shifter (the thickness of the first electrode is 3 μm and the thickness of the patch electrode in the second electrode is 2 μm) as a function of the effective dielectric constant of the adjustable dielectric layer, as shown in an exemplary embodiment of this application.

[0043] Figure 12This is a schematic diagram illustrating the variation of the transmission coefficient of another adjustable phase shifter (the thickness of the first electrode is 3 μm and the thickness of the patch electrode in the second electrode is 2 μm) as a function of the effective dielectric constant of the adjustable dielectric layer, as shown in an exemplary embodiment of this application.

[0044] Figure 13 This is a schematic diagram illustrating the change of the phase angle of the electromagnetic wave with the effective dielectric constant of the adjustable dielectric layer in another adjustable phase shifter (the thickness of the first electrode is 3 μm and the thickness of the patch electrode in the second electrode is 2 μm) according to an exemplary embodiment of this application.

[0045] In the accompanying drawings, the same parts use the same reference numerals, and the drawings are not drawn to scale.

[0046] The attached figures are labeled as follows:

[0047] 10-First substrate; 11-First electrode; 20-Second substrate; 21-Second electrode; 211-Pattern electrode; 211a-First patch electrode; 211b-Second patch electrode; 211c-Third patch electrode; 212-First sub-electrode; 213-Second sub-electrode; 214-Connector; 30-Dielectric layer; 31-Adjustable dielectric layer; 32-Non-adjustable dielectric layer. Detailed Implementation

[0048] The following detailed description of the embodiments of this application, in conjunction with the accompanying drawings, will provide a thorough understanding of how this application uses technical means to solve technical problems and achieve corresponding technical effects, enabling its implementation. The embodiments of this application and the various features within them can be combined with each other without conflict, and the resulting technical solutions are all within the protection scope of this application. In the drawings, for clarity, the dimensions and relative dimensions of layers and regions may be exaggerated. The same reference numerals denote the same elements throughout.

[0049] It should be understood that although the terms "first," "second," "third," etc., may be used to describe various elements, components, areas, layers, and / or parts, these elements, components, areas, layers, and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, area, layer, or part from another element, component, area, layer, or part. Therefore, without departing from the teachings of this application, the first element, component, area, layer, or part discussed below may be referred to as the second element, component, area, layer, or part.

[0050] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the scope of this application. When used herein, the singular forms “a,” “an,” and “the” are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprising” and / or “including,” when used in this specification, identify the presence of the stated features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups. When used herein, the term “and / or” includes any and all combinations of the associated listed items.

[0051] To fully understand this application, detailed structures and steps will be presented in the following description to illustrate the technical solutions proposed in this application. Preferred embodiments of this application are described in detail below; however, in addition to these detailed descriptions, this application may have other implementation methods.

[0052] A phase shifter with a coplanar waveguide (CPW) structure has its signal electrode (center conductor) and ground electrode on the same layer. This requires additional electrodes and makes it unsuitable for applying voltage. Furthermore, the center conductor and ground electrode are typically of the same thickness, limiting the phase shift and thus restricting the application of the phase shifter.

[0053] Therefore, this application provides an adjustable phase shifter, such as Figure 1 , Figure 2a and Figure 2b As shown, it includes: a first substrate 10 and a second substrate 20 disposed opposite to each other, a dielectric layer 30 with adjustable dielectric constant located between the first substrate 10 and the second substrate 20, and a first electrode 11 disposed on the first substrate 10 and a second electrode 21 disposed on the second substrate 20.

[0054] The second electrode 21 includes at least one patch electrode 211 spaced apart on the second substrate 20. The orthographic projection of the first electrode 11 on the second substrate 20 covers at least a portion of the dielectric layer 30 and a portion of the orthographic projection of the patch electrode 211 on the second substrate 20.

[0055] It should be noted that, in order to... Figure 1 The positions of the first electrode 11 and the second electrode 21 (especially the patch electrode 211) are clearly shown in the image, so in Figure 1 The first substrate 10, the second substrate 20, and the dielectric layer 30 are not shown in the diagram, but they are combined... Figure 2a and Figure 2b This allows us to understand the positions of the first substrate 10, the second substrate 20, and the dielectric layer 30.

[0056] The electric field formed between the first electrode 11 and the patch electrode 211 can change the dielectric constant of the dielectric layer 30. In the above structure, the first electrode 11, the dielectric layer 30, and at least one patch electrode 211 form at least one variable capacitor (the dielectric layer 30 is the capacitor dielectric). This structure facilitates the application of voltage. Under the action of the electric field between the first electrode 11 and the patch electrode 211, the dielectric constant of the dielectric layer 30 within the variable capacitor changes, thereby causing a change in the capacitance value of the variable capacitor. This can change the phase of the electromagnetic wave signal, thus realizing the phase shifting function of the electromagnetic wave signal and achieving electromagnetic wave transmission. The phase shift amount of the adjustable phase shifter is positively correlated with the relative change in the capacitance value of the variable capacitor. The propagation direction of the electromagnetic wave is the extension direction or arrangement direction of the variable capacitor.

[0057] Furthermore, the above structure does not require additional electrodes, and has minimal impact on the performance of its phase shifter.

[0058] In addition, the formula for calculating the parallel plate capacitor is:

[0059] C = ε r *ε0*S / d;

[0060] Where C is the capacitance value of the aforementioned variable capacitor, and ε r ε0 is the effective dielectric constant of the dielectric layer 30 between the first electrode 11 and the patch electrode 211, S is the area of ​​the overlapping region of the first electrode 11 and the patch electrode 211 on the second substrate 20 (the area of ​​the capacitor electrode plate facing each other), and d is the vertical distance between the first electrode 11 and the patch electrode 211.

[0061] As can be seen from the above formula, the phase shifter structure in this application can also increase the capacitance value of the variable capacitor by increasing the thickness of the first electrode 11 and / or the patch electrode 211. When the dielectric constant of the dielectric layer 30 inside the variable capacitor changes, the change in capacitance value of the variable capacitor is further increased, so that the phase shifter obtains a larger phase shift and further improves the transmission efficiency of the phase shifter.

[0062] In some embodiments, the orthographic projection of the first electrode 11 on the second substrate 20 and the orthographic projection of each patch electrode 211 on the second substrate 20 at least partially overlap to form a variable capacitor corresponding to each patch electrode 211.

[0063] In some embodiments, the second electrode 21 is a ground electrode and is connected to the ground signal GND.

[0064] In some embodiments, the dielectric layer 30 includes a liquid crystal layer. Under the action of the electric field between the first electrode 11 and the patch electrode 211, the liquid crystal molecules in the variable capacitor are deflected, causing their dielectric constant to change.

[0065] It should be noted that the dielectric layer 30 is not limited to the liquid crystal layer; other dielectric layer materials whose dielectric constant can change under the action of an electric field are also feasible.

[0066] In some embodiments, such as Figure 3 As shown, the second electrode 21 further includes a first sub-electrode 212 and a second sub-electrode 213 spaced apart on the second substrate 20. The orthographic projection of at least one patch electrode 211 on the second substrate 20 falls between the orthographic projections of the first sub-electrode 212 and the second sub-electrode 213 on the second substrate 20.

[0067] Correspondingly, each patch electrode 211 is connected to the first sub-electrode 212 and the second sub-electrode 213 via a corresponding connection portion 214. This allows the patch electrode 211 to be connected to the same signal as the first sub-electrode 212 and the second sub-electrode 213. The variable capacitors formed between the patch electrodes 211 in the first electrode 11 and the second electrode 21 are connected in parallel with each other.

[0068] In some embodiments, the patch electrodes 211 are arranged periodically.

[0069] In some embodiments, the number of patch electrodes 211 can be determined based on the frequency of the electromagnetic wave to be transmitted.

[0070] In addition, the orthographic projection of the first electrode 11 on the second substrate 20 does not cover the orthographic projections of the first sub-electrode 212 and the second sub-electrode 213 on the second substrate 20. By forming a variable capacitance at the location of the patch electrode 211 in the first electrode 11 and the second electrode 21, directional transmission of electromagnetic wave signals can be achieved, reducing unnecessary transmission losses.

[0071] In some embodiments, such as Figure 2a and Figure 2b As shown, the dielectric layer 30 can be formed over the entire surface, including an adjustable dielectric layer 31 (i.e., the capacitor dielectric layer of the variable capacitor) located in the overlapping area of ​​the first electrode 11 and the patch electrode 211, and a non-adjustable dielectric layer 32 located in the non-overlapping area of ​​the first electrode 11 and the patch electrode 211. The adjustable dielectric layer 31 located in the overlapping area of ​​the first electrode 11 and the patch electrode 211 will have its dielectric constant changed under the influence of the electric field between the first electrode 11 and the patch electrode 211, thereby causing a change in the capacitance value of the aforementioned variable capacitor.

[0072] In some embodiments, such as Figure 4 As shown, the at least one patch electrode 211 includes at least one first patch electrode 211a and at least one second patch electrode 211b and at least one third patch electrode 211c respectively disposed on both sides of the at least one first patch electrode 211a;

[0073] In this embodiment, the area of ​​the overlapping region between each second patch electrode 211b and the orthographic projection of the first electrode 11 on the second substrate 20 gradually increases or decreases along the extending direction of the orthographic projection of the at least one second patch electrode 211b on the second substrate 20. That is, the area of ​​the overlapping region between each second patch electrode 211b and the orthographic projection of the first electrode 11 on the second substrate 20 gradually increases or decreases along the arrangement direction of the at least one second patch electrode 211b.

[0074] In the at least one third patch electrode 211c described above, the area of ​​the overlapping region between each third patch electrode 211c and the orthographic projection of the first electrode 11 on the second substrate 20 gradually increases or decreases along the extending direction of the orthographic projection of the at least one third patch electrode 211c on the second substrate 20. That is, the area of ​​the overlapping region between each third patch electrode 211c and the orthographic projection of the first electrode 11 on the second substrate 20 gradually increases or decreases along the arrangement direction of the at least one third patch electrode 211c.

[0075] Since the area of ​​the overlapping region of the patch electrode 211 and the first electrode 11 on the second substrate 20 is positively correlated with the capacitance value of the formed variable capacitor, when at least one patch electrode 211 is connected to the same signal, the capacitance value of the variable capacitor formed between at least one second patch electrode 211b and the first electrode 11 can increase or decrease according to a certain rule, which can make the electromagnetic wave signal transmission more stable and minimize transmission loss. The same applies to the side where the third patch electrode 211c is located, and will not be described again here.

[0076] In some embodiments, the size of the patch electrode 211 is smaller than the size of the first electrode 11. The orthographic projection of the patch electrode 211 on the second substrate 20 can be completely covered by the orthographic projection of the first electrode 11 on the second substrate 20. Therefore, the overlapping area of ​​each patch electrode 211 and the orthographic projection of the first electrode 11 on the second substrate 20 is the orthographic projection of the patch electrode 211 on the second substrate 20, and the area of ​​the corresponding overlapping area is the orthographic projection area of ​​the patch electrode 211 on the second substrate 20.

[0077] Therefore, the above structure can also be understood as, for example Figure 4As shown, in the at least one second patch electrode 211b, the orthogonal projection area of ​​each second patch electrode 211b on the second substrate 20 gradually increases or decreases along the extending direction of the orthogonal projection of the at least one second patch electrode 211b on the second substrate 20. Similarly, in the at least one third patch electrode 211c, the orthogonal projection area of ​​each third patch electrode 211c on the second substrate 20 gradually increases or decreases along the extending direction of the orthogonal projection of the at least one third patch electrode 211c on the second substrate 20.

[0078] Furthermore, the overlapping areas of the at least one second patch electrode 211b and the orthographic projection of the first electrode 11 on the second substrate 20, and the overlapping areas of the at least one third patch electrode 211c and the orthographic projection of the first electrode 11 on the second substrate 20, are symmetrically arranged on both sides of the orthographic projection of the at least one first patch electrode 211a on the second substrate 20. The term "symmetrical arrangement" can refer to axial symmetry, centrosymmetry, or other symmetrical arrangements. It can also be understood that the orthographic projections of the second patch electrodes 211b and 211c, which are equidistant from the at least one first patch electrode 211a, on the second substrate 20, form overlapping areas with the orthographic projection of the first electrode 11 on the second substrate 20, and these overlapping areas have the same size and shape.

[0079] This ensures that the variable capacitance on the second patch electrode 211b side changes in the same way as the variable capacitance on the third patch electrode 211c side, further making the electromagnetic wave signal transmission more stable and further reducing transmission loss.

[0080] In some embodiments, when the orthographic projection of the patch electrode 211 on the second substrate 20 is completely covered by the orthographic projection of the first electrode 11 on the second substrate 20, the above structure can also be understood as follows: the orthographic projections of the at least one second patch electrode 211b and the at least one third patch electrode 211c on the second substrate 20 are symmetrically arranged on both sides of the orthographic projection of the at least one first patch electrode 211a on the second substrate 20. It can also be understood that the orthographic projections of the second patch electrode 211b and the third patch electrode 211c on the second substrate 20, which are equidistant from the at least one first patch electrode 211a, have the same size and shape.

[0081] In some embodiments, the shape of the overlapping area of ​​the patch electrode 211 and the first electrode 11 on the second substrate 20 is square, circular or elliptical.

[0082] In some embodiments, when the orthographic projection of the patch electrode 211 on the second substrate 20 is completely covered by the orthographic projection of the first electrode 11 on the second substrate 20, the above structure can also be understood as the shape of the orthographic projection of the patch electrode 211 on the second substrate 20 being square, circular, or elliptical. A square structure is shown below. Figure 3 As shown, the elliptical structure is as follows Figure 5 As shown.

[0083] In some embodiments, such as Figure 2a and Figure 2b As shown, the first electrode 11 is disposed on the side of the first substrate 10 near the second substrate 20, and the second electrode 21 is disposed on the side of the second substrate 20 near the first substrate 10. This structure allows the electric field between the first electrode 11 and the second electrode 21 to act on the dielectric layer 30, more effectively changing the dielectric constant of the dielectric layer 30 and causing a change in the capacitance value of the variable capacitor. Furthermore, when the distance between the first substrate 10 and the second substrate 20 remains constant, the capacitance value of the variable capacitor can be directly increased by changing the thickness of the first electrode 11 and / or the patch electrode 211. When the dielectric constant of the dielectric layer 30 within the variable capacitor changes, the phase shifter can obtain a larger phase shift.

[0084] In some embodiments, the thickness of the first electrode 11 is the same as the thickness of the first sub-electrode 212 and the second sub-electrode 213 along a direction perpendicular to the surface of the second substrate 20 near the first substrate 10.

[0085] It can be understood that the thickness of the first sub-electrode 212 and the second sub-electrode 213 in the first electrode 11 and the second electrode 21 is the same, and they can be made using the same process or conductor material.

[0086] Correspondingly, in the second electrode 21, the thickness of the patch electrode 211 can be the same as or different from that of the first sub-electrode 212 and the second sub-electrode 213. The patch electrode 211 can be fabricated using different processes than the first sub-electrode 212 and the second sub-electrode 213, so that the patch electrode 211 can have a different thickness than the first sub-electrode 212 and the second sub-electrode 213. This allows the capacitance value of the variable capacitor to be increased by adjusting the thickness of the patch electrode 211, thereby enabling the phase shifter to obtain a larger phase shift.

[0087] In some embodiments, along a direction perpendicular to the surface of the second substrate 20 near the first substrate 10, the thickness of the connection portion 214 is the same as the thickness of the patch electrode 211, the first sub-electrode 212, or the second sub-electrode 213. It can be understood that the connection portion 214 can be fabricated simultaneously with the patch electrode 211 using the same process, or it can be fabricated simultaneously with the first sub-electrode 212 and the second sub-electrode 213 using the same process.

[0088] In some embodiments, the materials of the first substrate 10 and the second substrate 20 include commonly used PCB insulating materials such as polytetrafluoroethylene glass fiber laminate, phenolic paper laminate, and phenolic glass cloth laminate, or rigid materials with low electromagnetic wave loss such as quartz and glass, with a thickness of 100μm to 10mm.

[0089] The materials of the first electrode 11 and the second electrode 21 include low-resistance, low-loss metals such as copper, gold, and silver, which can be prepared by methods such as magnetron sputtering, thermal evaporation, and electroplating.

[0090] In some embodiments, when the thickness of both the first electrode 11 and the second electrode 21 of the adjustable phase shifter is 2 μm, the reflection coefficient S11 of the adjustable phase shifter varies with the effective dielectric constant ε of the adjustable dielectric layer 31. r The changes, such as Figure 6 As shown in the figure, within the 15GHz-16GHz frequency band, when the effective dielectric constant ε of the tunable dielectric layer 31 is... r The reflection coefficient S11 of the adjustable phase shifter changes from 2.461 to 3.016 and then to 3.571, and is always less than -10dB (absolute value greater than 10dB). The transmission coefficient S21 of the adjustable phase shifter varies with the effective dielectric constant ε of the adjustable dielectric layer 31. r The changes, such as Figure 7 As shown in the figure, within the 15GHz-16GHz frequency band, when the effective dielectric constant ε of the tunable dielectric layer 31 is... r The transmission coefficient S21 of the adjustable phase shifter changes from 2.461 to 3.016 and then to 3.571, and the transmission coefficient S21 is always greater than -1.6dB (absolute value less than 1.6dB).

[0091] Correspondingly, the phase angle of the electromagnetic wave within the adjustable phase shifter varies with the effective dielectric constant ε of the adjustable dielectric layer 31. r The changes, such as Figure 8 As shown in the figure, at the center frequency of 15.5 GHz, when the effective dielectric constant ε of the tunable dielectric layer 31 is... r The change from 2.461 to 3.016 and then to 3.571 corresponds to a phase shift Δφ of approximately 110°.

[0092] In some embodiments, when the thickness of the first electrode 11 of the adjustable phase shifter is 2 μm and the thickness of the patch electrodes 211 in the second electrode 21 is 2.5 μm, the phase angle of the electromagnetic wave in the adjustable phase shifter changes with the effective dielectric constant ε of the adjustable dielectric layer 31. r The changes, such as Figure 9 As shown in the figure, at the center frequency of 15.5 GHz, when the effective dielectric constant ε of the tunable dielectric layer 31 is... r The change from 2.461 to 3.016 and then to 3.571 corresponds to a phase shift Δφ of approximately 150°. It can be seen that, relative to... Figure 8 When the thickness of the patch electrode 211 in the second electrode 21 of the adjustable phase shifter is increased from 2μm to 2.5μm, the phase shift of the adjustable phase shifter increases significantly.

[0093] The thickness of the first sub-electrode 212, the second sub-electrode 213, and the connecting portion 214 in the second electrode 21 of the adjustable phase shifter can be 2 μm (the same as the thickness of the first electrode 11).

[0094] In some embodiments, when the thickness of the first electrode 11 of the adjustable phase shifter is 2 μm and the thickness of the patch electrodes 211 in the second electrode 21 is 3 μm, the phase angle of the electromagnetic wave in the adjustable phase shifter changes with the effective dielectric constant ε of the adjustable dielectric layer 31. r The changes, such as Figure 10 As shown in the figure, at the center frequency of 15.5 GHz, when the effective dielectric constant ε of the tunable dielectric layer 31 is... r The change from 2.461 to 3.016 and then to 3.571 corresponds to a phase shift Δφ of approximately 190°. It can be seen that, relative to... Figure 8 and Figure 9 When the thickness of the patch electrode 211 in the second electrode 21 of the adjustable phase shifter is increased from 2μm to 2.5μm and then to 3.0μm, the phase shift of the adjustable phase shifter gradually increases. It can be seen that the increase in the thickness of the patch electrode 211 in the second electrode 21 can enable the phase shifter to obtain a larger phase shift and further improve the transmission efficiency of the phase shifter.

[0095] The thickness of the first sub-electrode 212, the second sub-electrode 213, and the connecting portion 214 in the second electrode 21 of the adjustable phase shifter can be 2 μm (the same as the thickness of the first electrode 11).

[0096] In some embodiments, when the thickness of the first electrode 11 of the adjustable phase shifter is 3 μm and the thickness of the patch electrodes 211 in the second electrode 21 is 2 μm, the reflection coefficient S11 of the adjustable phase shifter varies with the effective dielectric constant ε of the adjustable dielectric layer 31. r The changes, such as Figure 11As shown in the figure, within the 15GHz-16GHz frequency band, when the effective dielectric constant ε of the tunable dielectric layer 31 is... r The reflection coefficient S11 of the adjustable phase shifter changes from 2.461 to 3.016 and then to 3.571, and is always less than -15dB (absolute value greater than 15dB). The transmission coefficient S21 of the adjustable phase shifter varies with the effective dielectric constant ε of the adjustable dielectric layer 31. r The changes, such as Figure 12 As shown in the figure, within the 15GHz-16GHz frequency band, when the effective dielectric constant ε of the tunable dielectric layer 31 is... r The transmission coefficient S21 of the adjustable phase shifter changes from 2.461 to 3.016 and then to 3.571, and the transmission coefficient S21 remains greater than -1.3dB (the absolute value is less than 1.3dB). It can be seen that, relative to... Figure 6 and Figure 7 When the thickness of the first electrode 11 of the adjustable phase shifter is increased from 2μm to 3μm, the first electrode 11 and the patch electrode 211 can better confine electromagnetic waves, thereby obtaining better reflection and transmission coefficients. The smaller the reflection coefficient and the larger the transmission coefficient, the higher the transmission efficiency of the phase shifter.

[0097] Correspondingly, the phase angle of the electromagnetic wave within the adjustable phase shifter varies with the effective dielectric constant ε of the adjustable dielectric layer 31. r The changes, such as Figure 13 As shown in the figure, at the center frequency of 15.5 GHz, when the effective dielectric constant ε of the tunable dielectric layer 31 is... r The change from 2.461 to 3.016 and then to 3.571 corresponds to a phase shift Δφ of approximately 192°. It can be seen that, relative to... Figure 8 When the thickness of the first electrode 11 of the adjustable phase shifter is increased from 2μm to 3μm, the phase shift of the adjustable phase shifter increases significantly. It can be seen that increasing the thickness of the first electrode 11 can enable the phase shifter to obtain a larger phase shift, thereby further improving the transmission efficiency of the phase shifter.

[0098] The thickness of the first sub-electrode 212 and the second sub-electrode 213 in the second electrode 21 of the adjustable phase shifter can be 3 μm (the same as the thickness of the first electrode 11), and the thickness of the connecting part 214 can be 2 μm.

[0099] In this application, the first electrode 11, the dielectric layer 30, and at least one patch electrode 211 form at least one variable capacitor. This structure facilitates the application of voltage, does not require additional electrodes, and has little impact on the performance of the phase shifter. The capacitance value of the variable capacitor can be increased by changing the thickness of the first electrode 11 and / or the patch electrode 211. When the dielectric constant of the dielectric layer 30 inside the variable capacitor changes, the phase shifter can obtain a larger phase shift.

[0100] This application provides an electronic device including any of the adjustable phase shifters described above. In practical applications, the electronic device may further include a support unit, such as a support plate, on which the phase shifter may be mounted; however, this embodiment of the invention does not impose any limitations on this.

[0101] It should be noted that the number of adjustable phase shifters included in the electronic device can be determined according to actual needs, and the embodiments of the present invention do not impose specific limitations.

[0102] The above are merely preferred embodiments of this application and are not intended to limit this application. Various modifications and variations are possible for those skilled in the art. Any modifications, equivalent substitutions, or improvements made within the spirit and principles of this application should be included within the scope of protection of this application. Although the embodiments disclosed in this application are as described above, the content is merely for the purpose of facilitating understanding of this application and is not intended to limit this application. Any person skilled in the art to which this application pertains may make any modifications and variations in the form and details of the implementation without departing from the spirit and scope disclosed in this application; however, the scope of protection of this application shall still be determined by the scope defined in the appended claims.

Claims

1. An adjustable phase shifter, characterized in that, include: A first substrate and a second substrate arranged opposite to each other; A dielectric layer with adjustable dielectric constant is located between the first substrate and the second substrate; A first electrode is disposed on the side of the first substrate near the second substrate; The second electrode is disposed on the side of the second substrate close to the first substrate; The second electrode includes at least one patch electrode spaced on the second substrate, and the orthographic projection of the first electrode on the second substrate at least covers a portion of the dielectric layer and a portion of the orthographic projection of the patch electrode on the second substrate. The second electrode further includes a first sub-electrode and a second sub-electrode spaced apart on the second substrate; each of the patch electrodes is connected to the first sub-electrode and the second sub-electrode through a corresponding connection portion.

2. The adjustable phase shifter according to claim 1, characterized in that, The orthographic projection of the at least one patch electrode on the second substrate falls between the orthographic projections of the first sub-electrode and the second sub-electrode on the second substrate.

3. The adjustable phase shifter according to claim 2, characterized in that, The orthogonal projection of the first electrode on the second substrate does not cover the orthogonal projections of the first sub-electrode and the second sub-electrode on the second substrate.

4. The adjustable phase shifter according to claim 1, characterized in that, The second electrode is a ground electrode.

5. The adjustable phase shifter according to claim 1, characterized in that, The dielectric layer includes a liquid crystal layer.

6. The adjustable phase shifter according to claim 1, characterized in that, The at least one patch electrode includes at least one first patch electrode, at least one second patch electrode disposed on one side of the at least one first patch electrode, and at least one third patch electrode disposed on the other side of the at least one first patch electrode; Wherein, in the at least one second patch electrode, the area of ​​the overlapping region of each second patch electrode and the first electrode on the second substrate gradually increases or gradually decreases along the extending direction of the orthogonal projection of the at least one second patch electrode on the second substrate. In the at least one third patch electrode, the area of ​​the overlapping region of each third patch electrode and the orthographic projection of the first electrode on the second substrate gradually increases or gradually decreases along the extending direction of the orthographic projection of the at least one third patch electrode on the second substrate.

7. The adjustable phase shifter according to claim 6, characterized in that, The overlapping areas of the at least one second patch electrode and the orthographic projection of the first electrode on the second substrate, and the overlapping areas of the at least one third patch electrode and the orthographic projection of the first electrode on the second substrate, are symmetrically disposed on both sides of the orthographic projection of the at least one first patch electrode on the second substrate.

8. The adjustable phase shifter according to claim 1, characterized in that, The overlapping area of ​​the patch electrode and the first electrode on the second substrate has a square, circular or elliptical shape.

9. The adjustable phase shifter according to claim 2, characterized in that, Along a direction perpendicular to the surface of the second substrate near the first substrate, the thickness of the first electrode is the same as the thickness of the first sub-electrode and the second sub-electrode.

10. The adjustable phase shifter according to claim 1, characterized in that, Along a direction perpendicular to the surface of the second substrate near the first substrate, the thickness of the connection portion is the same as the thickness of the patch electrode, the first sub-electrode, or the second sub-electrode.

11. An electronic device, characterized in that, Includes the adjustable phase shifter as described in any one of claims 1 to 10.

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