Plasma processing device and plasma processing method

Abstract

The plasma processing apparatus of the present invention includes a chamber, a substrate support, a high-frequency power supply and a bias power supply. The substrate support includes an electrode and is arranged in the chamber. The high-frequency power supply is configured to supply high-frequency power to generate plasma from gas in the chamber. The bias power supply is electrically connected to the electrode of the substrate support. The high-frequency power supply is configured to supply high-frequency power during an ignition period in which plasma is ignited in the chamber. The bias power supply is configured to apply multiple bias pulses, each of which is a negative voltage, to the electrode of the substrate support in sequence during the ignition period, so that the absolute values ​​of the voltage levels of the multiple bias pulses are increased stepwise or gradually.

Description

Technical Field

[0001] Illustrative embodiments of the present invention relate to a plasma processing apparatus and a plasma processing method. Background Art

[0002] A plasma processing device is used in substrate processing. A plasma processing device includes a chamber, a substrate support, a high-frequency power supply, and a bias power supply. The substrate support includes an electrode and is arranged in the chamber. The high-frequency power supply is configured to supply high-frequency power to generate plasma from a gas in the chamber. The bias power supply is configured to apply bias energy to the electrode of the substrate support to introduce ions into the substrate. In the following patent document 1, a technology using a negative DC voltage pulse as bias energy is described.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2019-036658 Summary of the invention

[0006] Technical problem to be solved by the invention

[0007] The present invention provides a technology for suppressing the power of reflected waves of high-frequency power during the ignition period of plasma.

[0008] Technical solutions for solving technical problems

[0009] In an exemplary embodiment, a plasma processing apparatus is provided. The plasma processing apparatus includes a chamber, a substrate support, a high-frequency power supply, and a bias power supply. The substrate support includes an electrode and is disposed in the chamber. The high-frequency power supply is configured to supply high-frequency power to generate plasma from a gas in the chamber. The bias power supply is electrically connected to the electrode of the substrate support. The high-frequency power supply is configured to supply high-frequency power during an ignition period in which plasma is ignited in the chamber. The bias power supply is configured to apply multiple bias pulses, each of which is a negative voltage, to the electrode of the substrate support in sequence during the ignition period, so that the absolute values ​​of the voltage levels of the multiple bias pulses are increased stepwise or gradually.

[0010] Effects of the Invention

[0011] According to an exemplary embodiment, the power of the reflected wave of the high frequency power can be suppressed during the ignition period of the plasma. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to an exemplary embodiment.

[0013] Figure 2FIG. 1 is a diagram showing a structure inside a chamber of a plasma processing apparatus according to an exemplary embodiment.

[0014] Figure 3 is with Figure 1 FIG. 1 is a timing chart showing an example of processing in the plasma processing apparatus shown in FIG.

[0015] Figure 4 is with Figure 1 FIG. 1 is a timing chart showing an example of processing in the plasma processing apparatus shown in FIG.

[0016] Figure 5 This is a timing diagram of an example of a bias pulse for the substrate and a bias pulse for the edge ring.

[0017] Figure 6 is a flow chart of a plasma processing method according to an exemplary embodiment.

[0018] Figure 7 (a) Figure 7 (b) are graphs showing the absolute value of the voltage level of the bias pulse and the reflected wave of the high-frequency power in the first experiment.

[0019] Figure 8 (a) Figure 8 (b) are graphs showing the absolute value of the voltage level of the bias pulse and the reflected wave of the high-frequency power in the second experiment.

[0020] Fig. 9 (a) Fig. 9 (b) are graphs showing the absolute value of the voltage level of the bias pulse and the reflected wave of the high-frequency power in the third experiment.

[0021] Fig.10 (a) Fig.10 (b) are graphs showing the absolute value of the voltage level of the bias pulse and the reflected wave of the high-frequency power in the fourth experiment. DETAILED DESCRIPTION

[0022] Various exemplary embodiments are described below.

[0023] In an exemplary embodiment, a plasma processing apparatus is provided. The plasma processing apparatus includes a chamber, a substrate support, a high-frequency power supply, and a bias power supply. The substrate support includes an electrode and is disposed in the chamber. The high-frequency power supply is configured to supply high-frequency power to generate plasma from a gas in the chamber. The bias power supply is electrically connected to the electrode of the substrate support. The high-frequency power supply is configured to supply high-frequency power during an ignition period in which plasma is ignited in the chamber. The bias power supply is configured to apply multiple bias pulses, each of which is a negative voltage, to the electrode of the substrate support in sequence during the ignition period, so that the absolute values ​​of the voltage levels of the multiple bias pulses are increased stepwise or gradually.

[0024] When the absolute value of the voltage level of the bias pulse increases sharply, the power of the reflected wave of the high-frequency power increases. In the above embodiment, during the ignition period of the plasma, the levels of the plurality of bias pulses increase stepwise or gradually. Therefore, according to the above embodiment, the power of the reflected wave of the high-frequency power can be suppressed. In addition, since the power of the reflected wave is suppressed, the plasma can be stably generated in a short time, and the length of time until the substrate processing using the plasma starts can be shortened.

[0025] In an exemplary embodiment, the bias power supply may be configured to set the absolute value of the voltage level of each of the plurality of bias pulses to a value greater than the absolute value of the voltage level of any bias pulse previously applied to the electrode of the substrate support. That is, the absolute values ​​of the voltage levels of the plurality of bias pulses sequentially applied to the electrode of the substrate support may be increased (ramp up) during the ignition period of the plasma.

[0026] In an exemplary embodiment, each of the plurality of bias pulses may be a DC voltage pulse.

[0027] In an exemplary embodiment, the high frequency power supply is configured to supply high frequency power during a processing period in which the substrate is processed in the chamber using plasma after the ignition period. The bias power supply is configured to sequentially apply a plurality of bias pulses, each of which is a negative voltage, to the electrode during the processing period.

[0028] In an exemplary embodiment, the plasma processing apparatus may further include a pressure controller configured to adjust the pressure in the chamber. The pressure controller may be configured to set the pressure in the chamber during the processing period to a pressure different from the pressure in the chamber during the ignition period. The pressure controller may be configured to set the pressure in the chamber during the processing period to a pressure lower than the pressure in the chamber during the ignition period.

[0029] In an exemplary embodiment, the high-frequency power supply may be configured to set the frequency of the high-frequency power during the treatment period to a frequency different from the frequency of the high-frequency power during the ignition period. Alternatively, the high-frequency power supply may be configured to set the frequency of the high-frequency power during the treatment period to a frequency lower than the frequency of the high-frequency power during the ignition period.

[0030] In an exemplary embodiment, the high frequency power supply may be configured to set the power level of the high frequency power during the treatment period to a power level different from the power level of the high frequency power during the ignition period. Alternatively, the high frequency power supply may be configured to set the power level of the high frequency power during the treatment period to a power level higher than the power level of the high frequency power during the ignition period.

[0031] In an exemplary embodiment, the plasma processing apparatus may further include a gas supply unit configured to supply gas into the chamber. The plasma processing apparatus generates plasma in the chamber from the gas supplied by the gas supply unit. The gas supply unit may also be configured to set a flow rate of at least one gas supplied to the chamber during the processing period to be different from a flow rate of the at least one gas supplied to the chamber during the ignition period.

[0032] In an exemplary embodiment, the ignition period and the treatment period may each include a plurality of periodic pulse periods. The bias power supply may apply a plurality of bias pulses to the electrode during the on period of each of the plurality of pulse periods. In this case, the bias power supply applies a plurality of bias pulses to the electrode during the on period of each of the plurality of pulse periods with a bias period shorter than the pulse period as the time interval of the on period. The bias power supply may stop applying the plurality of bias pulses to the electrode during the off period of each of the plurality of pulse periods.

[0033] In an exemplary embodiment, the bias power supply may be configured to adjust the ratio of the duration of each on period to the duration of the pulse period, i.e., the duty cycle. The bias power supply may be configured to set the duty cycle during the processing period to a ratio different from the duty cycle during the ignition period. The bias power supply may be configured to set the duty cycle during the processing period to a ratio smaller than the duty cycle during the ignition period.

[0034] In an exemplary embodiment, the substrate support may be configured to support the edge ring placed thereon. The plasma processing apparatus may be configured to apply a plurality of bias pulses, each of which has a negative voltage, to the edge ring.

[0035] In another exemplary embodiment, a plasma processing method is provided. The plasma processing method includes the step of igniting plasma in a chamber of a plasma processing device during an ignition period. The plasma processing device includes a substrate support including an electrode and disposed in the chamber. The plasma processing method also includes the step of sequentially applying a plurality of bias pulses to the electrode during the ignition period. The plurality of bias pulses are negative voltages, and the absolute values ​​of the voltage levels of the plurality of bias pulses increase stepwise or gradually during the ignition period.

[0036] Hereinafter, various exemplary embodiments will be described in detail with reference to the accompanying drawings. In addition, in each of the drawings, the same reference numerals are given to the same or corresponding parts.

[0037] Figure 1 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to an exemplary embodiment. Figure 1 The illustrated plasma processing apparatus 1 includes a chamber 10 . Figure 2 FIG. 2 is a diagram showing a structure inside a chamber of a plasma processing apparatus according to an exemplary embodiment. Figure 2 As shown, the plasma processing apparatus 1 may be a capacitively coupled plasma processing apparatus.

[0038] The chamber 10 provides an internal space 10s therein. The central axis of the internal space 10s is an axis AX extending in the vertical direction. In one embodiment, the chamber 10 includes a chamber body 12. The chamber body 12 has a substantially cylindrical shape. The internal space 10s is provided in the chamber body 12. The chamber body 12 is formed, for example, of aluminum. The chamber body 12 is electrically grounded. The inner wall surface of the chamber body 12, that is, the wall surface defining the internal space 10s, may also be covered with a plasma-resistant film. The film may be a ceramic film such as a film formed by anodizing or a film formed from yttrium oxide.

[0039] The side wall of the chamber body 12 provides a passage 12p. When the substrate W is transported between the internal space 10s and the outside of the chamber 10, the substrate W passes through the passage 12p. To open and close the passage 12p, a gate valve 12g is provided along the side wall of the chamber body 12.

[0040] The plasma processing apparatus 1 further includes a substrate support 16. The substrate support 16 is configured to support a substrate W placed thereon in the chamber 10. The substrate W has a substantially disc shape. The substrate support 16 is supported by a support portion 17. The support portion 17 extends upward from the bottom of the chamber body 12. The support portion 17 has a substantially cylindrical shape. The support portion 17 is formed of an insulating material such as quartz.

[0041] In one embodiment, the substrate support 16 has a lower electrode 18 and an electrostatic chuck 20. The lower electrode 18 and the electrostatic chuck 20 are disposed in the chamber 10. The lower electrode 18 is formed of a conductive material such as aluminum and has a substantially disk shape.

[0042] The lower electrode 18 has a flow path 18f therein. The flow path 18f is a flow path for a heat exchange medium. The heat exchange medium is, for example, a liquid refrigerant. The flow path 18f receives the heat exchange medium supplied from a heat exchange medium supply device (for example, a cooling unit) via a pipe 23a. The supply device is provided outside the chamber 10. The heat exchange medium supplied to the flow path 18f flows in the flow path 18f and returns to the supply device via a pipe 23b.

[0043] The electrostatic chuck 20 is disposed on the lower electrode 18. Figure 1 As shown, the electrostatic chuck 20 has a dielectric portion 20d and an electrode 21a. The electrostatic chuck 20 may also have an electrode 22a and an electrode 22b. When the substrate W is processed in the internal space 10s, it is placed on the electrostatic chuck 20 and held by the electrostatic chuck 20. In addition, the substrate support 16 supports the edge ring ER placed thereon. The edge ring ER is a plate having a substantially annular shape. The edge ring ER may have electrical conductivity. The edge ring ER is formed, for example, of silicon or silicon carbide. As shown in FIG. Figure 2 As shown, the edge ring ER is mounted on the substrate support 16 so that the central axis thereof coincides with the axis AX. The substrate W accommodated in the chamber 10 is arranged on the electrostatic chuck 20 in a region surrounded by the edge ring ER.

[0044] The plasma processing apparatus 1 may further include a gas line 25. The gas line 25 supplies a heat transfer gas such as He gas from a gas supply mechanism to a gap between the upper surface of the electrostatic chuck 20 (first region described below) and the back surface (lower surface) of the substrate W.

[0045] The plasma processing device 1 may also include an outer peripheral portion 28 and an outer peripheral portion 29. The outer peripheral portion 28 extends upward from the bottom of the chamber body 12. The outer peripheral portion 28 has a substantially cylindrical shape and extends along the outer periphery of the support portion 17. The outer peripheral portion 28 is formed of a conductive material and has a substantially cylindrical shape. The outer peripheral portion 28 is electrically grounded. The surface of the outer peripheral portion 28 may also be covered with a plasma-resistant film. The film may be a ceramic film such as a film formed by anodizing or a film formed from yttrium oxide.

[0046] The outer peripheral portion 29 is provided on the outer peripheral portion 28. The outer peripheral portion 29 is formed of a material having insulating properties. The outer peripheral portion 29 is formed of ceramics such as quartz. The outer peripheral portion 29 has a substantially cylindrical shape. The outer peripheral portion 29 extends along the outer periphery of the lower electrode 18 and the electrostatic chuck 20.

[0047] The plasma processing apparatus 1 further includes an upper electrode 30. The upper electrode 30 is provided above the substrate support 16. The upper electrode 30 closes the upper opening of the chamber body 12 together with a member 32. The member 32 has insulating properties. The upper electrode 30 is supported on the upper part of the chamber body 12 via the member 32.

[0048] The upper electrode 30 may also include a top plate 34 and a support body 36. The lower surface of the top plate 34 defines an internal space 10s. The top plate 34 provides a plurality of pores 34a. The plurality of pores 34a penetrate the top plate 34 in the plate thickness direction (vertical direction). The top plate 34 is formed of silicon, for example. Alternatively, the top plate 34 may have a structure in which a plasma-resistant film is provided on the surface of an aluminum component. The film may be a ceramic film such as a film formed by anodizing or a film formed from yttrium oxide.

[0049] The support body 36 supports the top plate 34 in a manner that the top plate 34 can be detached. The support body 36 is formed of a conductive material such as aluminum, for example. The support body 36 provides a gas diffusion chamber 36a therein. The support body 36 also provides a plurality of pores 36b. The plurality of pores 36b extend downward from the gas diffusion chamber 36a. The plurality of pores 36b are respectively connected to the plurality of pores 34a. The support body 36 also provides a gas inlet 36c. The gas inlet 36c is connected to the gas diffusion chamber 36a. The gas inlet 36c is connected to the gas supply pipe 38.

[0050] The gas source group 40 is connected to the gas supply pipe 38 via the valve group 41, the flow controller group 42 and the valve group 43. The gas source group 40, the valve group 41, the flow controller group 42 and the valve group 43 constitute a gas supply unit. The gas source group 40 includes a plurality of gas sources. The valve group 41 and the valve group 43 each include a plurality of valves (e.g., on-off valves). The flow controller group 42 includes a plurality of flow controllers. The plurality of flow controllers of the flow controller group 42 are respectively mass flow controllers or pressure-controlled flow controllers. The plurality of gas sources of the gas source group 40 are connected to the gas supply pipe 38 via the corresponding valves of the valve group 41, the corresponding flow controllers of the flow controller group 42 and the corresponding valves of the valve group 43. The plasma processing device 1 is capable of supplying the gas of one or more gas sources selected from the plurality of gas sources of the gas source group 40 to the internal space 10s at a flow rate that is individually adjusted.

[0051] A baffle 48 is provided between the outer peripheral portion 28 and the side wall of the chamber body 12. The baffle 48 can be formed by, for example, covering a ceramic such as yttrium oxide on an aluminum member. A plurality of through holes are formed in the baffle 48. Below the baffle 48, an exhaust pipe 52 is connected to the bottom of the chamber body 12. An exhaust device 50 is connected to the exhaust pipe 52. The exhaust device 50 has a pressure controller such as an automatic pressure control valve and a vacuum pump such as a turbomolecular pump, and can reduce the pressure in the internal space 10s.

[0052] The following, together with Figure 1 and Figure 2 Together, also refer to Figure 3 to Figure 5 . Figure 3 and Figure 4 is with Figure 1 FIG. 1 is a timing chart showing an example of processing in the plasma processing apparatus shown in FIG. Figure 5 This is a timing diagram of an example of a bias pulse for the substrate and a bias pulse for the edge ring.

[0053] like Figure 1 As shown, the plasma processing apparatus 1 further includes a high-frequency power supply 57. The high-frequency power supply 57 is connected to the lower electrode 18 via a matching device 58. The high-frequency power supply 57 is a power supply for generating high-frequency power RF for plasma generation. The high-frequency power RF has a frequency in the range of 27 to 100 MHz, for example, a frequency of 40 MHz or 60 MHz. The matching device 58 has a matching circuit for matching the impedance of the load side (lower electrode 18 side) of the high-frequency power supply 57 with the output impedance of the high-frequency power supply 57. In addition, the high-frequency power supply 57 may not be electrically connected to the lower electrode 18, but may be connected to the upper electrode 30 via the matching device 58.

[0054] In the plasma processing apparatus 1, a high frequency electric field is generated in the chamber 10 using high frequency power RF from the high frequency power supply 57. The gas in the chamber 10 is excited by the generated high frequency electric field. As a result, plasma is ignited and generated in the chamber 10. Figure 3 As shown, the high frequency power source 57 supplies high frequency power RF during two periods, an ignition period Pi and a processing period Pp. The ignition period Pi is a period during which plasma is ignited in the chamber 10. The processing period Pp is a period after the ignition period Pi. The substrate W is processed by chemical species during the processing period Pp, and the chemical species are substances such as ions and / or free radicals from the plasma generated in the chamber 10.

[0055] like Figure 1As shown, in one embodiment, the substrate support 16 may also have a first region 21 and a second region 22. The first region 21 is a central region of the substrate support 16. The first region 21 includes a central region of the electrostatic chuck 20 and a central region of the lower electrode 18. The second region 22 extends circumferentially radially outward relative to the first region 21. The second region 22 includes a peripheral region of the electrostatic chuck 20 and a peripheral region of the lower electrode 18. In the plasma processing apparatus 1, the first region 21 and the second region 22 are composed of a single electrostatic chuck and are formed integrally with each other. In addition, in Figure 1 In the figure, the boundary between the first region 21 and the second region 22 is indicated by a dotted line. In another embodiment, the first region 21 and the second region 22 may also be formed by independent electrostatic chucks.

[0056] The first region 21 is configured to support a substrate W placed thereon (i.e., on its upper surface). The first region 21 is a region having a disc shape. The central axis of the first region 21 is substantially consistent with the axis AX. The first region 21 and the second region 22 share a dielectric portion 20d. The dielectric portion 20d is formed of a dielectric such as aluminum nitride or aluminum oxide. The dielectric portion 20d has a substantially disc shape. In one embodiment, the thickness of the dielectric portion 20d in the second region 22 is smaller than the thickness of the dielectric portion 20d in the first region 21. The position in the vertical direction of the upper surface of the dielectric portion 20d in the second region 22 may also be lower than the position in the vertical direction of the upper surface of the dielectric portion 20d in the first region 21.

[0057] The first region 21 has an electrode 21a (sucker electrode). The electrode 21a is a film-shaped electrode, and is provided in the dielectric portion 20d in the first region 21. A DC power supply 55 is connected to the electrode 21a via a switch 56. When a DC voltage from the DC power supply 55 is applied to the electrode 21a, an electrostatic attraction is generated between the first region 21 and the substrate W. The generated electrostatic attraction causes the substrate W to be attracted to the first region 21 and held by the first region 21.

[0058] The first region 21 further includes a first electrode 21c. The first electrode 21c is a film-shaped electrode provided in the dielectric portion 20d in the first region 21. Alternatively, the electrode 21a may extend closer to the upper surface of the first region 21 than the first electrode 21c in the vertical direction.

[0059] The plasma processing apparatus 1 further includes a first bias power supply 61. The first bias power supply 61 is electrically connected to the first electrode 21c. The first bias power supply 61 may be connected to the first electrode 21c via a filter 62. The filter 62 is an electric filter configured to cut off or attenuate the high frequency power RF from the high frequency power supply 57.

[0060] like Figure 1 and Figure 5 As shown, the first bias power supply 61 is configured to apply a plurality of bias pulses BW to the first electrode 21c in sequence. The plurality of bias pulses BW are voltage pulses. In one embodiment, the plurality of bias pulses BW are negative voltage pulses. In one example, the negative voltage pulses are negative DC voltage pulses. The output voltage of the first bias power supply 61 may be 0V when the bias pulse BW is not output. Alternatively, the output voltage of the first bias power supply 61 has a voltage level V higher than the bias pulse BW when the bias pulse BW is not output. BW The absolute value of V BW |A voltage level with a small absolute value.

[0061] The first bias power supply 61 can also be provided with a bias frequency f B The specified time interval T B The bias pulse BW is periodically applied to the first electrode 21c. The time interval T B is the bias period, is the bias frequency f B The reciprocal of the bias frequency f B For example, the frequency is in the range of 200kHz to 13.56MHz. B The period during which the internal bias pulse BW is applied to the first electrode 21c (time length T A ) (i.e., duty cycle D B =T A / T B ×100(%)) is greater than 0 and less than 100.

[0062] In one embodiment, the ignition period Pi and the processing period P p Each may also include a plurality of periodic pulse periods P L .like Figure 4 As shown, during multiple pulses P L Each includes an opening period P ON and during the closing period P OFF That is, during the opening period P ON With multiple pulse periods P L The time interval T is the same length as P The first bias power supply 61 may also be in a periodic multiple pulse period P L The respective opening period P ON In the embodiment of the present invention, a plurality of bias pulses BW are applied to the first electrode 21c. The first bias power supply 61 may also be configured to provide a plurality of bias pulses BW during the plurality of pulses P. L The respective closing period P OFF The bias pulse BW is stopped from being applied to the first electrode 21c. P Internal opening period PON (Time length T ON ) (i.e., duty cycle D P =T ON / T P ×100(%)) is greater than 0 and less than 100. The above bias period, i.e., time interval T B The ratio of the pulse period, i.e. the on period P ON The time interval T P Therefore, if Figure 5 As shown, during each opening period P ON In the process, several bias pulses BW are sent at a time interval T. B are sequentially applied to the first electrode 21c.

[0063] like Figure 1 As shown, the second region 22 extends in a manner surrounding the first region 21. The second region 22 is a substantially annular region. The central axis of the second region 22 is substantially consistent with the axis AX. The second region 22 is configured to be able to support the edge ring ER placed thereon (i.e., on its upper surface). The second region 22 and the first region 21 share the dielectric portion 20d.

[0064] In one embodiment, the second region 22 may also utilize electrostatic attraction to hold the edge ring ER. In this embodiment, the second region 22 may have more than one electrode (suction cup electrode). Figure 1 In the embodiment shown, the second region 22 has a pair of electrodes, namely, electrode 22a and electrode 22b. Electrode 22a and electrode 22b are provided in the dielectric portion 20d in the second region 22. Electrode 22a and electrode 22b constitute a bipolar electrode. Electrode 22a and electrode 22b are respectively film-shaped electrodes. Alternatively, electrode 22a and electrode 22b may extend at approximately the same height position in the vertical direction.

[0065] A DC power supply 71 is connected to the electrode 22a via a switch 72 and a filter 73. The filter 73 is an electric filter configured to cut off or attenuate the high frequency power RF, the bias pulse BW, and the bias pulse BE described later. A DC power supply 74 is connected to the electrode 22b via a switch 75 and a filter 76. The filter 76 is an electric filter configured to cut off or reduce the high frequency power RF, the bias pulse BW, and the bias pulse BE.

[0066] The DC power supply 71 and the DC power supply 74 apply a DC voltage to the electrode 22a and the electrode 22b, respectively, to generate an electrostatic attraction for adsorbing the edge ring ER to the second region 22. In addition, the set potential of each of the electrode 22a and the electrode 22b can be any one of a positive potential, a negative potential, and 0V. For example, the potential of the electrode 22a can be set to a positive potential, and the potential of the electrode 22b can be set to a negative potential. In addition, the potential difference between the electrode 22a and the electrode 22b can also be formed by using a single DC power supply instead of two DC power supplies.

[0067] When a DC voltage is applied to the electrodes 22a and 22b, an electrostatic attraction is generated between the second region 22 and the edge ring ER. The edge ring ER is attracted to the second region 22 by the generated electrostatic attraction and is held by the second region 22.

[0068] The second region 22 may further include a gas pipeline 22g. The gas pipeline 22g is used to supply a heat transfer gas G to the gap between the second region 22 and the edge ring ER. HT , such as a gas pipeline provided for He gas. The gas pipeline 22g is connected to the heat transfer gas G HT The source of the gas is connected to the gas supply mechanism 86.

[0069] The second region 22 may also have a second electrode 22c. The second electrode 22c is a film-shaped electrode. The second electrode 22c is provided in the dielectric portion 20d in the second region 22. The second electrode 22c is separated from the first electrode 21c. In addition, the electrode 22a and the electrode 22b may extend at a position closer to the upper surface of the second region 22 than the second electrode 22c in the vertical direction. In addition, the second electrode 22c may also be arranged outside the second region 22. For example, the second electrode 22c may also be provided below the edge ring ER and in the outer peripheral portion 29.

[0070] The plasma processing apparatus 1 may further include a second bias power supply 81. The second bias power supply 81 is electrically connected to the second electrode 22c. The second bias power supply 81 may also be connected to the second electrode 22c via a filter 82. The filter 82 is an electric filter configured to cut off or attenuate high frequency power RF.

[0071] like Figure 1 and Figure 5As shown, the second bias power supply 81 is configured to apply a plurality of bias pulses BE to the second electrode 22c in sequence. The plurality of bias pulses BE are applied to the edge ring ER via the second electrode 22c. The plurality of bias pulses BE are voltage pulses. In one embodiment, the plurality of bias pulses BE are negative voltage pulses. In one example, the negative voltage pulses are negative DC voltage pulses. When the bias pulse BE is not output, the output voltage of the second bias power supply 81 may be 0V. Alternatively, when the bias pulse BE is not output, the output voltage of the second bias power supply 81 has a voltage level V higher than the bias pulse BE. BE The absolute value of V BE |A voltage level with a small absolute value. The bias pulse BE may be synchronized with the bias pulse BW. The bias pulse BE may not be synchronized with the bias pulse BW.

[0072] The second bias power supply 81 can also be switched at a time interval T BE The bias pulse BE is periodically applied to the second electrode 22c. BE is the bias period, is the bias frequency f BE The reciprocal of the bias frequency f BE For example, the frequency is in the range of 200kHz to 13.56MHz. Figure 5 As shown, the time interval T BE Can be compared with the time interval T B Similarly, it can also be compared with the time interval T B different.

[0073] At time interval T BE The period during which a bias pulse BE is applied to the second electrode 22c (time length T AE ) (i.e., duty cycle D BE =T AE / T BE ×100(%)) is greater than 0 and less than 100. Figure 5 As shown, the time length T AE Can be compared with the time length T A Similarly, it can also be compared with the time length T A In addition, the duty cycle D BE Can be compared with the duty cycle D B The same can also be said of the duty cycle D B different.

[0074] In one embodiment, the ignition period Pi and the processing period P p Each may also include a plurality of periodic pulse periods P L＿E .like Figure 4 As shown, during multiple pulses P L＿E Includes the opening period P ON＿Eand during the closing period P OFF＿E That is, during the opening period P ON_E With multiple pulse periods P L_E The time interval T is the same length as P_E The second bias power supply 81 may also be provided during a plurality of periodic pulses P L_E The respective opening period P ON_E In the embodiment of the present invention, a plurality of bias pulses BE are applied to the second electrode 22c. The second bias power supply 81 may also be configured to provide a plurality of bias pulses BE during the plurality of pulses P. L_E The respective closing period P OFF_E In the time interval T, the bias pulse BE is stopped from being applied to the second electrode 22c. P＿E Internal opening period P ON＿E (Time length T ON＿E ) (i.e., duty cycle D P＿E =T ON＿E / T P＿E ×100(%)) is greater than 0 and less than 100. The above bias period, i.e., time interval T BE The ratio of the pulse period, i.e. the on period P ON_E The time interval T P_E Therefore, if Figure 5 As shown, during each opening period P ON_E In the process, several bias pulses BE are sent at a time interval T BE is applied to the second electrode 22c in sequence. ON_E Can be with the opening period P ON Synchronous. Open period P ON_E It is also possible not to ON synchronous.

[0075] In one embodiment, if Figure 4 As shown, the high frequency power source 57 may also be configured to have a plurality of periodic pulse periods P during the ignition period Pi and the processing period Pp, respectively. L_R The respective opening period P ON_R In other words, the high frequency power source 57 can also be provided at a time interval T. P_R The opening period P ON_R The high frequency power source 57 may also supply high frequency power RF during multiple pulse periods P L_R The respective closing period P OFF_R In the time interval T, the high frequency power RF is stopped. P_R Internal opening period P ON_R (Time length T ON_R ) (i.e., duty cycle D P_R =T ON_R / T P_R×100(%)) is greater than 0 and less than 100. In addition, during the on period P ON_R Can be with the opening period P ON and opening period P ON_R Synchronous. Open period P ON_R It is also possible not to ON and opening period P ON_R At least one of them is synchronized.

[0076] In one embodiment, the plasma processing apparatus 1 may further include a power supply 88. The power supply 88 is configured to apply a voltage DCS to the upper electrode 30. The power supply 88 may apply the voltage DCS to the upper electrode 30 during each of the ignition period Pi and the processing period Pp. The voltage DCS may be a negative voltage. The voltage DCS may be a negative direct current voltage.

[0077] In one embodiment, if Figure 4 As shown, the power supply 88 may also be provided during the ignition period Pi and the processing period Pp in a periodic manner. L＿D The respective opening period P ON＿D In the process, the voltage DCS is applied to the upper electrode 30. That is, the power supply 88 can also be switched at a time interval T. P_D The opening period P ON_D In the embodiment of the present invention, the voltage DCS is applied to the upper electrode 30. The power supply 88 may also be configured to provide a plurality of pulses during the period P. L_D The respective closing period P OFF_D In the time interval T, the power supply 88 is stopped. P_D Internal opening period P ON＿D (Time length T ON＿D ) (i.e., duty cycle D P＿D =T ON＿D / T P＿D ×100(%)) is greater than 0 and less than 100. In addition, during the on period P ON_D Can be with the opening period P ON , Open period P ON_R and opening period P ON_R Synchronous. Open period P ON_D It is also possible not to ON , Open period P ON_R and opening period P ON_R At least one of them is synchronized.

[0078] In one embodiment, if Figure 2As shown, the plasma processing device 1 may further include a control unit MC. The control unit MC is a computer including a processor, a storage device, an input device, a display device, etc., and controls each unit of the plasma processing device 1. Specifically, the control unit MC executes a control program stored in the storage device, and controls each unit of the plasma processing device 1 based on the recipe data stored in the storage device. Through the control of the control unit MC, the process specified by the recipe data is performed in the plasma processing device 1.

[0079] The following, together with Figures 1 to 5 Together, also refer to Figure 6 Next, a plasma processing method according to an exemplary embodiment will be described. In addition, a detailed example of the operation of each part of the plasma processing apparatus 1 will be described. Figure 6 is a flow chart of a plasma processing method according to an exemplary embodiment.

[0080] exist Figure 6 In the plasma processing method shown (hereinafter referred to as "method MT"), the edge ring ER is held by the second region 22, and the substrate W is held by the first region 21 of the substrate support 16. In addition, the gas supply unit supplies the processing gas into the chamber 10. Figure 3 In the example shown, the gas supply unit supplies the processing gas into the chamber 10 from time t0. The supply of the processing gas into the chamber continues during the ignition period Pi and the processing period Pp. In addition, the exhaust device 50 (its pressure controller) adjusts the pressure in the chamber 10 to a specified pressure. In addition, the gas supply mechanism 86 starts to supply the heat transfer gas G at a time between time t0 and time t1 when the ignition period Pi starts. HT . Heat transfer gas G HT The heat transfer gas G is supplied to the gap between the second region 22 and the edge ring ER. The heat transfer gas G is continuously supplied during the ignition period Pi and the processing period Pp. HT .

[0081] Then, step STa is performed during the ignition period Pi. That is, during the ignition period Pi, plasma is ignited in the chamber 10. The high-frequency power source 57 supplies high-frequency power RF during the ignition period Pi. Figure 3 In the example shown, the supply of high-frequency power RF starts at time t1.

[0082] In addition, step STb is performed during the ignition period Pi. In step STb, the first bias power supply 61 sequentially applies a plurality of bias pulses BW to the first electrode 21c. Figure 3 In the example shown, the application of the plurality of bias pulses BW to the first electrode 21c starts at time t3 after time t1 and continues during the ignition period Pi. In step STb, the first bias power supply 61 sets the voltage level VBW The absolute value of V BW | In steps or increasing gradually.

[0083] In one embodiment, the first bias power supply 61 sets the absolute value of the voltage level of each of the plurality of bias pulses BW in the ignition period Pi to a value greater than the absolute value of the voltage level of any bias pulse BW previously applied to the first electrode 21c. Figure 5 As shown, the voltage levels V of the plurality of bias pulses BW sequentially applied to the first electrode 21c during the ignition period Pi are BW The absolute value of |V BW |Can also be increased.

[0084] When the absolute value of the voltage level of the bias pulse BW increases sharply, the power of the reflected wave of the high-frequency power RF increases. In the plasma processing device 1, the levels of the plurality of bias pulses BW increase stepwise or gradually during the ignition period Pi. Therefore, according to the plasma processing device 1, the power of the reflected wave of the high-frequency power RF can be suppressed. In addition, since the power of the reflected wave is suppressed, plasma can be stably generated in a short time, and the length of time until the substrate processing using plasma starts can be shortened.

[0085] In one embodiment, the second bias power supply 81 sequentially applies a plurality of bias pulses BE to the second electrode 22c during the ignition period Pi. The plurality of bias pulses BE are applied to the edge ring ER via the second electrode 22c. Figure 3 In the example shown, the application of the plurality of bias pulses BE to the second electrode 22c starts at time t3 and continues during the ignition period Pi. In addition, the second bias power supply 81 sets the voltage level V BE The absolute value of V BE |Increase stepwise or gradually. In this case, the power of the reflected wave of the high-frequency power RF can also be suppressed.

[0086] In one embodiment, the second bias power supply 81 sets the absolute value of the voltage level of each of the plurality of bias pulses BE to a value greater than the absolute value of the voltage level of any bias pulse BE previously applied to the second electrode 22c during the ignition period Pi. Figure 5 As shown, the voltage levels V of the plurality of bias pulses BE sequentially applied to the second electrode 22c during the ignition period Pi are BE The absolute value of |V BE |Can also be increased.

[0087] In one embodiment, the power supply 88 applies the voltage DCS to the upper electrode 30 during the ignition period Pi. Figure 3In the example shown, the application of the voltage DCS to the upper electrode 30 starts at time t2 between time t1 and time t3 and continues during the ignition period Pi (see Figure 3 The voltage level of the DCS is V DCS ).

[0088] In method MT, step STc is then performed. Step STc is performed during the treatment period Pp after the ignition period Pi. Figure 3 In the example shown, the processing period Pp starts at time t4. In the processing period Pp, the substrate W is processed in the chamber 10 using the plasma continuously generated since the ignition period Pi.

[0089] In one embodiment, the gas supply unit may also set the flow rate of at least one of the processing gases supplied to the chamber 10 during the processing period Pp to be different from the flow rate of the at least one gas supplied to the chamber 10 during the ignition period Pi. The flow rate of the at least one gas may be changed at time t5 after time t4. The time length between time point t4 and time point t5 is, for example, 0.6 seconds.

[0090] The processing gas includes, for example, a deposition gas and an oxygen-containing gas. The deposition gas is, for example, a carbon-containing gas such as a fluorocarbon gas. The oxygen-containing gas is, for example, an O2 gas. The gas supply unit may also set the flow rate of the deposition gas supplied to the chamber 10 during the processing period Pp to be smaller than the flow rate of the deposition gas supplied to the chamber 10 during the ignition period Pi. The gas supply unit may also set the flow rate of the oxygen-containing gas supplied to the chamber 10 during the processing period Pp to be larger than the flow rate of the oxygen-containing gas supplied to the chamber 10 during the ignition period Pi.

[0091] In one embodiment, the pressure controller of the exhaust device 50 may also set the pressure in the chamber 10 during the processing period Pp to a pressure different from the pressure in the chamber 10 during the ignition period Pi. The pressure controller may also set the pressure in the chamber 10 during the processing period Pp to a pressure different from the pressure in the chamber 10 during the ignition period Pi. Figure 3 As shown by the solid line in the middle, the pressure in the chamber 10 is set to be lower than the pressure in the chamber 10 in the ignition period Pi. The pressure controller may also set the pressure in the chamber 10 in the ignition period Pi (in the case of the pressure in the chamber 10 in the processing period Pp) to be lower than the pressure in the chamber 10 in the ignition period Pi. Figure 3 The pressure controller may also set the pressure in the chamber 10 in the ignition period Pi to the same value as the threshold value when the pressure in the chamber 10 in the processing period Pp is lower than the threshold value. The threshold value of the pressure in the chamber 10 is, for example, 2.666 Pa (20 mTorr).

[0092] The high-frequency power source 57 supplies high-frequency power RF also in the process period Pp in order to continuously generate plasma from the process gas from the ignition period Pi.

[0093] In one embodiment, the high frequency power source 57 may also set the frequency of the high frequency power RF in the processing period Pp to a frequency different from the frequency of the high frequency power RF in the ignition period Pi. Figure 3 As shown, the high-frequency power source 57 may set the frequency of the high-frequency power RF in the processing period Pp to a frequency lower than the frequency of the high-frequency power RF in the ignition period Pi.

[0094] In one embodiment, the high frequency power source 57 may also set the power level of the high frequency power RF during the treatment period Pp to a power level different from the power level of the high frequency power RF during the ignition period Pi. The high frequency power source 57 may also set the power level of the high frequency power RF during the treatment period Pp to a power level different from the power level of the high frequency power RF during the ignition period Pi. Figure 3 As shown by the solid line in the middle, the power level is set to be higher than the power level of the high-frequency power RF in the ignition period Pi. The high-frequency power source 57 may also set the power level of the high-frequency power RF in the ignition period Pi to the same level as the power level of the high-frequency power RF in the processing period Pp when the power level of the high-frequency power RF in the processing period Pp is below the threshold. Please refer to Figure 3 The power level of the high frequency power RF is shown by the dotted line in the figure. The high frequency power source 57 may also set the power level of the high frequency power RF in the ignition period Pi to the same value as the threshold value when the power level of the high frequency power RF in the processing period Pp is greater than the threshold value. The threshold value of the power level of the high frequency power RF is, for example, 2500W.

[0095] In one embodiment, the high frequency power supply 57 may also set the duty cycle D during the processing period Pp to P_R Set to the duty cycle D during the ignition period Pi P_R The high frequency power supply 57 can also change the duty ratio D during the processing period Pp. P_R Set to a duty ratio D during the ignition period Pi P_R The high frequency power supply 57 can also be used to adjust the duty ratio D during the processing period Pp. P＿R When the duty ratio D in the ignition period Pi is greater than the threshold value, P＿R Set to the duty ratio D during the processing period Pp P＿R The high frequency power supply 57 can also be set at a duty ratio D during the processing period Pp. P＿R If the duty cycle D in the ignition period Pi is smaller than the threshold, P＿R Set to the same value as the threshold. Duty cycle D P_R The threshold value is, for example, 30%.

[0096] The first bias power supply 61 sequentially applies a plurality of bias pulses BW to the first electrode 21c also during the processing period Pp. The plurality of bias pulses BW may be periodically sequentially applied to the first electrode 21c during the processing period Pp as in the ignition period Pi. The voltage levels of the plurality of bias pulses BW may be the same during the processing period Pp.

[0097] In one embodiment, the first bias power supply 61 can also set the duty cycle D during the processing period Pp to P Set to the duty cycle D during the ignition period Pi P The first bias power supply 61 can also set the duty ratio D in the processing period Pp to P ,like Figure 3 As shown by the solid line in the middle, the duty ratio D in the ignition period Pi is set to P The duty ratio D of the first bias power supply 61 during the processing period Pp is P If the value is above the threshold, Figure 3 As shown by the dashed line in the middle, the duty cycle D during the ignition period Pi can also be P Set to the duty ratio D during the processing period Pp P The duty ratio D of the first bias power supply 61 during the processing period Pp is P When the duty cycle D in the ignition period Pi is smaller than the threshold value, P Set to the same value as the threshold. Duty cycle D P The threshold value is, for example, 30%.

[0098] The second bias power supply 81 sequentially applies a plurality of bias pulses BE to the second electrode 22c also during the processing period Pp. The plurality of bias pulses BE may be periodically sequentially applied to the second electrode 22c during the processing period Pp as in the ignition period Pi. The voltage levels of the plurality of bias pulses BE may be the same during the processing period Pp.

[0099] In one embodiment, the second bias power supply 81 can also set the duty cycle D during the processing period Pp to P_E Set to the duty cycle D during the ignition period Pi P_E The second bias power supply 81 can also set the duty cycle D during the processing period Pp P_E Set to a duty ratio D during the ignition period Pi P_E The second bias power supply 81 can also be set at a duty ratio D in the processing period Pp. P＿E When the duty ratio D in the ignition period Pi is greater than the threshold value, P＿E Set to the duty ratio D during the processing period Pp P＿EThe second bias power supply 81 can also have a duty cycle D during the processing period Pp. P_E If the duty cycle D in the ignition period Pi is smaller than the threshold, P_E Set to the same value as the threshold. Duty cycle D P_E The threshold value is, for example, 30%.

[0100] The power supply 88 applies the voltage DCS to the upper electrode 30 also in the process period Pp. The voltage level of the voltage DCS in the process period Pp may be the same as the voltage level of the voltage DCS in the ignition period Pi.

[0101] In one embodiment, the power supply 88 can also set the duty cycle D during the processing period Pp to P＿D Set to the duty cycle D during the ignition period Pi P＿D The power supply 88 can also change the duty cycle D during the processing period Pp. P_D Set to a duty ratio D during the ignition period Pi P_D The power supply 88 can also be used to control the duty cycle D of Pp during the processing period. P＿D When the duty ratio D in the ignition period Pi is greater than the threshold value, P＿D Set to the duty ratio D during the processing period Pp P＿D The power supply 88 can also be operated at a duty cycle D during the processing period Pp. P＿D If the duty cycle D in the ignition period Pi is smaller than the threshold, P＿D Set to the same value as the threshold. Duty cycle D P_D The threshold value is, for example, 30%.

[0102] The gas supply mechanism 86 also supplies the heat transfer gas G during the processing period Pp. HT The gas supply mechanism 86 can also supply the heat transfer gas G in the processing period Pp to the gap between the second region 22 and the edge ring ER. HT The pressure of the heat transfer gas G in Pi during ignition is set to HT The gas supply mechanism 86 can also supply the heat transfer gas G in the processing period Pp to HT The pressure of the heat transfer gas G in the ignition period Pi is set to be greater than HT The pressure is high.

[0103] Although various exemplary embodiments have been described above, the present invention is not limited to the exemplary embodiments described above, and various additions, omissions, substitutions, and changes may be made. In addition, elements in different exemplary embodiments may be combined to form other exemplary embodiments.

[0104] For example, in another embodiment, the bias pulse BW from the first bias power supply 61 may be applied to the lower electrode 18. In this case, the plasma processing device 1 may not have the first electrode 21c. The bias pulse BW from the first bias power supply 61 may be applied to the electrode 21a. In this case, the plasma processing device 1 may not have the first electrode 21c.

[0105] In another embodiment, the bias pulse BE from the second bias power supply 81 may be applied to the electrode 22a and the electrode 22b. In this case, the plasma processing apparatus 1 may not include the second electrode 22c.

[0106] In another embodiment, the plasma processing device may be a capacitively coupled plasma processing device different from the plasma processing device 1. In another embodiment, the plasma processing device may be another type of plasma processing device. Another type of plasma processing device may be an inductively coupled plasma processing device, an electron cyclotron resonance (ECR) plasma processing device, or a plasma processing device that generates plasma using a surface wave such as a microwave.

[0107] In addition, in another embodiment, the voltage levels of the plurality of bias pulses BW may also be changed stepwise or gradually from the positive voltage level to the negative voltage level. In this case, after switching from the positive voltage pulse to the negative voltage pulse, the voltage levels V BW The absolute value of |V BW |Also increases stepwise or gradually as described above. Similarly, the voltage level of the plurality of bias pulses BE may also change stepwise or gradually from the positive voltage level to the negative voltage level. In this case, after switching from the positive voltage pulse to the negative voltage pulse, the voltage level V BE The absolute value of |V BE |Also increase stepwise or gradually as above.

[0108] The first to fourth experiments are described below. In the first to fourth experiments, the plasma processing device 1 was used to measure the power of the reflected wave of the high-frequency power RF in the ignition period Pi. In the first to third experiments, between the moment t3 and the moment t4 in the ignition period Pi, the absolute value of the voltage level of the plurality of bias pulses BW was increased from 0V to 9500V. The time length between the moment t3 and the moment t4 in the first to third experiments was 1 second, 2 seconds, and 3 seconds, respectively. In addition, in the fourth experiment, between the moment t3 and the moment t4 in the ignition period Pi, the absolute value of the voltage level of the plurality of bias pulses BW was increased stepwise to 2500V, 6000V, and 9500V.

[0109] Figure 7 (a) Figure 7 (b) represent the absolute value of the voltage level of the bias pulse BW in the first experiment | V BW |, Graph of the power Pr of the reflected wave of the high-frequency power RF. Figure 8 (a) Figure 8 (b) represent the absolute value of the voltage level of the bias pulse BW in the second experiment | V BW |, Graph of the power Pr of the reflected wave of the high-frequency power RF. Fig. 9 (a) Fig. 9 (b) represent the absolute value of the voltage level of the bias pulse BW in the third experiment | V BW |, Graph of the power Pr of the reflected wave of the high-frequency power RF. Fig.10 (a) Fig.10 (b) represent the absolute value of the voltage level of the bias pulse BW in the fourth experiment | V BW |, and graphs of the power Pr of the reflected wave of the high frequency power RF. As shown in these graphs, it is confirmed that by making the absolute value of the power level of the plurality of bias pulses BW |V BW | stepwise or gradually increase, the power Pr of the reflected wave of the high frequency power RF can be suppressed. In particular, in the third experiment and the fourth experiment, by making the absolute value |V BW | By increasing from 0 V to 9500 V in a period of 2 seconds or more, the power Pr of the reflected wave of the high-frequency power RF immediately after the bias pulse BW is applied can be significantly suppressed.

[0110] According to the above description, various embodiments of the present invention are described in this specification for the purpose of explanation, and various changes can be made without departing from the scope and spirit of the present invention. Therefore, the various embodiments disclosed in this specification are not intended to be limiting, and the true scope and spirit are given by the attached claims.

[0111] Description of Reference Numerals

[0112] 1 ... plasma processing apparatus, 10 ... chamber, 16 ... substrate supporter, 21c ... first electrode, 57 ... high frequency power supply, 61 ... first bias power supply.

Claims

1. A plasma processing device, characterized in that: include: Chamber; a substrate support including an electrode and disposed within the chamber; a high frequency power supply configured to supply high frequency power to generate plasma from a gas in the chamber; and a bias power supply electrically connected to the electrode, The high frequency power supply is configured to supply the high frequency power during an ignition period in which plasma is ignited in the chamber. The bias power supply is configured to apply a plurality of bias pulses, each of which is a negative voltage, to the electrode in sequence during the ignition period, so that the absolute values ​​of the voltage levels of the plurality of bias pulses increase stepwise or gradually in such a manner that the absolute value of the voltage level of one bias pulse among the plurality of bias pulses is greater than the absolute value of the voltage level of the previous bias pulse.

2. The plasma processing device according to claim 1, wherein: The plurality of bias pulses are respectively direct current voltage pulses.

3. The plasma processing device according to claim 1 or 2, characterized in that: The high frequency power source is configured to supply the high frequency power also during a processing period in which the substrate is processed in the chamber using plasma after the ignition period. The bias power supply is configured to sequentially apply a plurality of bias pulses each having a negative voltage to the electrode also during the processing period.

4. The plasma processing device according to claim 3, wherein: Also included is a pressure controller configured to adjust the pressure in the chamber, The pressure controller is configured to set the pressure in the chamber during the processing period to a pressure different from the pressure in the chamber during the ignition period.

5. The plasma processing device according to claim 4, characterized in that: The pressure controller is configured to set the pressure in the chamber during the processing period to a pressure lower than the pressure in the chamber during the ignition period.

6. The plasma processing apparatus according to claim 3, wherein: Also includes: The high-frequency power supply is configured to set the frequency of the high-frequency power in the processing period to a frequency different from the frequency of the high-frequency power in the ignition period.

7. The plasma processing apparatus according to claim 6, wherein: The high-frequency power supply is configured to set the frequency of the high-frequency power in the processing period to a frequency lower than the frequency of the high-frequency power in the ignition period.

8. The plasma processing apparatus according to claim 3, wherein: The high-frequency power supply is configured to set a power level of the high-frequency power in the processing period to a power level different from a power level of the high-frequency power in the ignition period.

9. The plasma processing apparatus according to claim 8, wherein: The high-frequency power supply is configured to set the power level of the high-frequency power in the processing period to a power level higher than the power level of the high-frequency power in the ignition period.

10. The plasma processing apparatus according to claim 3, wherein: further comprising a gas supply unit configured to supply a gas for generating plasma therefrom into the chamber, The gas supply unit is configured to set a flow rate of at least one gas supplied into the chamber during the processing period to be different from a flow rate of the at least one gas supplied into the chamber during the ignition period.

11. The plasma processing apparatus according to claim 3, wherein: The ignition period and the treatment period each include a plurality of periodic pulse periods. The bias power supply is configured to apply the plurality of bias pulses to the electrode during an on period of each of the plurality of pulse periods with a bias period shorter than a pulse period serving as a time interval between the on periods, and to stop applying the plurality of bias pulses to the electrode during an off period of each of the plurality of pulse periods.

12. The plasma processing apparatus according to claim 11, wherein: The bias power supply is configured to adjust a duty ratio, and is configured to set the duty ratio in the processing period to a ratio different from the duty ratio in the ignition period, wherein the duty ratio is a ratio of a time length of each on period to a time length of the pulse period.

13. The plasma processing apparatus according to claim 12, wherein: The bias power supply is configured to set the duty ratio in the processing period to a ratio smaller than the duty ratio in the ignition period.

14. The plasma processing device according to claim 1 or 2, characterized in that: The substrate support is configured to support the edge ring placed thereon. Another bias power supply is also included, and the other bias power supply is configured to apply a plurality of bias pulses, each of which has a negative voltage, to the edge ring.

15. A plasma treatment method, characterized in that: include: igniting plasma in a chamber of a plasma processing apparatus during the ignition period, wherein the plasma processing apparatus includes a substrate support including an electrode and disposed in the chamber; and A step of sequentially applying a plurality of bias pulses to the electrode during the ignition period, wherein the plurality of bias pulses are negative voltages, and the absolute values ​​of the voltage levels of the plurality of bias pulses increase stepwise or gradually during the ignition period in such a manner that the absolute value of the voltage level of one bias pulse among the plurality of bias pulses is greater than the absolute value of the voltage level of a previous bias pulse.

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