Substrate processing apparatus, method of manufacturing semiconductor device, and substrate support

Abstract

A substrate processing apparatus, a method of manufacturing a semiconductor device, and a substrate support that improve the removal efficiency of deposits and reduce the generation of particles and the like caused by the residue of the deposits when removing the deposits using an etching gas. The substrate processing apparatus includes a substrate support column that supports a substrate, a heat insulating portion that is provided below a substrate support area of the substrate support column, and a processing container that houses the substrate support column and the heat insulating portion. The heat insulating portion includes a cylindrical side wall portion that opposes an inner wall of the processing container and an upper end portion that faces the substrate support area to close an upper end of the side wall portion. At least a portion of a surface of the upper end portion that opposes the substrate support area is formed of an upper surface portion that is formed of a first material having a larger thermal conductivity than a second material that forms the upper end of the side wall portion and the substrate support column.

Description

Technical Field

[0001] This invention relates to a substrate processing apparatus, a method for manufacturing a semiconductor device, and a substrate support. Background Technology

[0002] As a step in the manufacturing process of a semiconductor device, a cleaning process is sometimes performed, in which etching gas is supplied to the processing chamber of the processing substrate to remove deposits and the like adhering to the processing chamber (for example, Patent Document 1).

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2015-26660 Summary of the Invention

[0006] The problem that the invention aims to solve

[0007] However, since the deposits cannot be completely removed through the etching process, the unremoved deposits become particles, which can sometimes affect the processing of the substrate.

[0008] The purpose of this disclosure is to provide a technique that can improve the removal efficiency of deposits and reduce the generation of particles and the like caused by deposit residue when using etching gases for deposit removal.

[0009] Solution for solving the problem

[0010] According to one aspect of this disclosure, a technology is provided comprising: a substrate support pillar supporting a substrate; a heat insulation portion disposed below a substrate support region of the substrate support pillar; and a processing container housing the substrate support pillar and the heat insulation portion, the heat insulation portion having: a cylindrical sidewall portion opposing an inner wall of the processing container; and an upper end portion facing the substrate support region and closing the upper end of the sidewall portion, at least a portion of the surface of the upper end portion opposing the substrate support region being formed by an upper surface portion, the upper surface portion being formed by a first material having a thermal conductivity greater than that of a second material forming the upper end of the sidewall portion and the substrate support pillar.

[0011] Invention Effects

[0012] A technique is provided that can improve the removal efficiency of deposits and reduce the generation of particles and the like caused by deposit residue when using etching gas to remove deposits. Attached Figure Description

[0013] Figure 1 This is a schematic structural diagram of a vertical processing furnace as one aspect of the substrate processing apparatus disclosed herein, and is a diagram showing the furnace portion in a longitudinal sectional view.

[0014] Figure 2 This is a schematic structural diagram of a vertical processing furnace as one embodiment of the substrate processing apparatus disclosed herein. Figure 1 The AA-line sectional view shows the processing furnace section.

[0015] Figure 3 This is a perspective view showing a substrate support member as one embodiment of the present disclosure.

[0016] Figure 4 This is a cross-sectional view showing an example of the heat insulation portion of a substrate support member as one embodiment of the present disclosure.

[0017] Figure 5 This is a longitudinal sectional view showing another example of the heat insulation portion of a substrate support member as one embodiment of the present disclosure.

[0018] Figure 6 This is a schematic structural diagram of the controller of a substrate processing apparatus as one embodiment of the present disclosure, and is a diagram of the control system of the controller represented by a block diagram.

[0019] In the picture:

[0020] 10: Substrate processing apparatus; 200: Wafer (substrate); 201: Processing chamber (processing container); 203: Processing tube (processing container); 217: Crystal boat (substrate support); 218: Heat insulation part. Detailed Implementation

[0021] The following is for reference Figures 1 to 6 This explanation is provided. Furthermore, the accompanying drawings used in the following explanation are schematic, and the dimensional relationships and ratios of the elements shown in the drawings may not correspond to reality. Additionally, the dimensional relationships and ratios of elements may not be consistent across different drawings.

[0022] (1) Structure of the substrate processing device

[0023] like Figure 1 As shown, the processing furnace 202 has a heater 207 as a heating unit (heating mechanism). The heater 207 is cylindrical and is vertically mounted by being supported on a holding plate. The heater 207 also functions as an activation mechanism (activation unit) that uses heat to activate (excite) gas. The heater 207 is located outside the heat insulation portion 218 (described later) and facing the substrate support region 402. That is, in this embodiment, the heater 207 is not located inside the heat insulation portion 218.

[0024] Inside the heater 207, a reaction tube constituting a reaction vessel (processing vessel) is arranged concentrically with the heater 207. The reaction tube has a double tube structure consisting of an inner tube (inner cylinder, internal tube) 204 and an outer tube (outer cylinder, outer tube) 203 that concentrically surrounds the inner tube 204. The inner tube 204 and the outer tube 203 are respectively made of heat-resistant materials such as quartz (SiO2) or silicon carbide (SiC), and are formed into a cylindrical shape that is closed at the top and open at the bottom.

[0025] A processing chamber 201 for processing the wafer 200, which serves as a substrate, is formed in the hollow portion of the inner tube 204 (inside the reaction vessel). The processing chamber 201 is configured to house the wafers 200 in a configuration from one end (lower side) to the other end (upper side) within the processing chamber 201. It is also possible to divide the processing chamber 201 into multiple regions. In this embodiment, the region within the processing chamber 201 where multiple wafers 200 are arranged is referred to as the substrate support region 204 (wafer support region). The substrate support region 204 is also referred to as the substrate arrangement region (wafer arrangement region). The substrate support region 204 includes a region where the temperature is maintained uniformly by the heater 207 for uniform processing of the wafers 200, i.e., a heat homogenization region T1. Furthermore, within the processing chamber 201, the region containing the substrate support region 204 and surrounded by the heater 207, i.e., the region within the processing chamber 201 where the temperature is relatively high, is referred to as a high-temperature region. Furthermore, within the processing chamber 201, the area that does not include the substrate support region 204 and is not substantially surrounded by the heater 207 (the area surrounding the heat insulation portion 218 described later), i.e., the area within the processing chamber 201 with a relatively low temperature, is referred to as the low-temperature region. Specifically, the low-temperature region is the area within the processing chamber 201 located below the upper surface of the heat insulation portion 218. Additionally, the direction in which the wafers 200 are arranged within the processing chamber 201 is referred to as the substrate alignment direction (wafer alignment direction).

[0026] Below the outer tube 203, a manifold (inlet flange) 209 is arranged concentrically with the outer tube 203. The inner tube 204 and outer tube 203 are supported from below by the manifold 209. The manifold 209 is made of a metal material such as stainless steel (SUS) and is formed into a cylindrical shape with openings at both the upper and lower ends. The lower end of the outer tube 203 abuts against the upper end of the manifold 209. Figure 1 As shown, an O-ring 220a, serving as a sealing component, is provided between the manifold 209 and the outer tube 203. The manifold 209 is supported by the heater base, thus the outer tube 203 is installed vertically. The reaction vessel mainly consists of the outer tube 203, the inner tube 204, and the manifold 209.

[0027] A preparation chamber (nozzle receiving chamber) 201a is formed in the hollow portion of the inner tube 204. The preparation chamber 201a protrudes radially outward from the side wall of the inner tube 204, forming a channel shape (groove shape) that extends vertically. The inner wall of the preparation chamber 201a constitutes part of the inner wall of the processing chamber 201. Alternatively, in a top view, the preparation chamber 201a and the processing chamber 201 are interconnected via an opening 201b provided in the inner tube 204.

[0028] A cover 204b is provided on the inner wall of both the inner tube 204 and the preparation chamber 201a. This cover is a gas flow path restrictor formed along the inner wall and protruding from the inner wall toward the central axis of the inner tube 204. The cover 204b can be made of, for example, quartz or SiC. The cover 204b is disposed in an area opposite at least a portion of the sidewall (side wall 404) of the heat insulation portion 218. That is, when viewed from above, the cover 204b is provided to surround the outer periphery of the heat insulation portion 218. By forming a flow path between the cover 204b and the sidewall of the heat insulation portion 218 for the inert gas supplied from the gas supply pipe 342f (described later) to flow from below to above, the cover 204b suppresses contact between the raw material gas and the reaction gas supplied to the substrate support region 204 and the sidewall and lower surface of the heat insulation portion 218. This prevents the formation of deposits on the sidewall, lower surface, and inside of the heat insulation portion 218. In addition, in this method, the gas flow path restriction part is configured as a cover 204b, but it is not limited to the shape of a cover. It can also be configured as a block shape, with the inner tube 204 protruding inward.

[0029] Nozzles 410 and 420, serving as gas supply units, are housed within the preparation chamber 201a. Nozzles 410 and 420 are constructed from heat-resistant materials such as quartz or SiC, and are L-shaped elongated nozzles. The horizontal portions of nozzles 410 and 420 are arranged to penetrate the sidewall of the manifold 209. The vertical portions of nozzles 410 and 420 are respectively arranged to rise upwards along the inner wall of the preparation chamber 201a from the lower part towards the wafer alignment direction. That is, as... Figure 2 As shown, nozzles 410 and 420 are respectively disposed on the sides of the substrate support region 204, horizontally surrounding the region of the substrate support region 204. Figure 1 As shown, nozzles 410 and 420 are arranged such that their upper ends are positioned at a height near the top of the crystal boat 217, which will be described later. In this disclosure, nozzles 410 and 420 are also referred to as the first nozzle and the second nozzle, respectively.

[0030] Gas supply holes (openings) 410a and 420a are respectively provided on the sides of nozzles 410 and 420. Multiple gas supply holes 410a and 420a are provided from the top to the bottom of nozzles 410 and 420, respectively, in a manner corresponding to the entire area of ​​the substrate support region 204 in the wafer arrangement direction, opposite to the wafer 200. That is, multiple gas supply holes 410a and 420a are provided at a height from the bottom to the top of the crystal boat 217 (described later), enabling gas to be ejected onto all the wafers 200 housed in the crystal boat 217.

[0031] In this method, gas is transported via nozzles 410 and 420 disposed within a cylindrical space, namely the preparation chamber 201a. Furthermore, gas is ejected into the processing chamber 201 from gas supply holes 410a and 420a, which are respectively opened in the nozzles 410 and 420. Moreover, the main flow of gas within the inner tube 204 is set in a direction parallel to the surface of the wafer 200, i.e., a horizontal direction. With this structure, gas can be uniformly supplied to each wafer 200. The gas flowing on the surface of the wafer 200 flows toward the exhaust hole 204a, which will be described later. However, the direction of gas flow is appropriately determined according to the position of the exhaust hole 204a and is not limited to a horizontal direction.

[0032] Gas supply pipes 342a and 342d are connected to nozzles 410 and 420. Thus, two nozzles 410 and 420 and two gas supply pipes 342a and 342d are connected to the inner tube 204, which is configured to supply various gases into the processing chamber 201.

[0033] A gas supply pipe 342f is connected below the manifold 209. The gas supply pipe 342f is arranged to pass through the lower part of the side wall of the manifold 209 and the inner pipe 204.

[0034] Gas supply pipes 342b and 342c and gas supply pipe 342e are connected to gas supply pipes 342a and 342d in a confluence manner. On gas supply pipes 342a to 342f, mass flow controllers (MFCs) 341a to 341f (flow controllers, flow control units) and valves 343a to 343f (on / off valves) are installed sequentially from the upstream side of the gas flow.

[0035] As a raw material gas, or processing gas, a gas containing predetermined elements that constitute the main elements of the film formed on the wafer 200 can be supplied from the gas supply pipe 342a to the wafer processing area within the processing chamber 201. The raw material gas refers to a raw material in a gaseous state, such as a gas obtained by vaporizing a raw material that is liquid at room temperature and pressure, or a raw material that is gaseous at room temperature and pressure. The gas containing the predetermined elements functions as a film-forming gas, or a source of the predetermined elements.

[0036] Etching gas (cleaning gas) used in the cleaning process described later can be supplied from gas supply pipe 342b into processing chamber 201.

[0037] The gas supply pipe 342d can supply reactive gases (reactants), i.e., processing gases, to the wafer processing area within the processing chamber 201. These reactive gases, such as oxidizing gases or nitriding gases, function as film-forming gases.

[0038] Inert gases can be supplied from gas supply pipes 342c and 342e to the wafer processing area within the processing chamber 201. These inert gases function as purge gases, dilution gases, or carrier gases.

[0039] An inert gas can be supplied from the gas supply pipe 342f to the low-temperature region within the processing chamber 201. This inert gas serves as a purging gas. The inert gas supplied from the gas supply pipe 342f is supplied, for example, between the inner wall 201A and the side wall portion 404 of the processing chamber 201. Additionally, the inert gas is supplied to at least one of the outer peripheral space or the inner space of the heat insulation portion 218. The inert gas supply system (nozzle) for purging the side wall portion 404 of the heat insulation portion 218 and the inert gas supply system (nozzle) for purging the inner space 404B can be a single system or can be provided independently. Alternatively, the gas supply pipe 342f can be connected to the rotating mechanism 267 described later, supplying inert gas from the outer periphery of the rotating shaft 255 to the low-temperature region within the processing chamber 201.

[0040] The raw material gas supply system (including the metal raw material gas supply system) is mainly composed of gas supply pipe 342a, MFC 341a, and valve 343a. Nozzle 410 can also be included in the raw material gas supply system. The reaction gas supply system (including the oxygen gas supply system) is mainly composed of gas supply pipe 342d, MFC 341d, and valve 343d. Nozzle 420 can also be included in the reaction gas supply system. The raw material gas supply system and the reaction gas supply system can also be collectively referred to as the processing gas supply system (gas supply system). Alternatively, at least one of the raw material gas supply system or the reaction gas supply system can be considered as the processing gas supply unit. The first inert gas supply system (purge gas supply system, dilution gas supply system, carrier gas supply system) is mainly composed of gas supply pipes 342c, 342e, MFC 341c, 341e, and valves 343c, 343e. The second inert gas supply system (purge gas supply system) is mainly composed of gas supply pipe 342f, MFC 341f, and valve 343f. The etching gas supply system (clean gas supply system) mainly consists of gas supply pipe 342b, MFC 341b, and valve 343b.

[0041] like Figure 1 As shown, an exhaust port (exhaust slit) 204a, for example, a slit-shaped through hole, is elongated in the vertical direction on the side wall of the inner tube 204. The exhaust port 204a is, for example, rectangular in frontal view, and is arranged from the lower to the upper part of the side wall of the inner tube 204 in a manner corresponding to the entire area in the wafer alignment direction of the wafer alignment region. Furthermore, the exhaust port 204a is not limited to being a slit-shaped through hole; it can also be composed of multiple holes. The exhaust passage 206 within the processing chamber 201, which is formed by the annular space (gap) between the inner tube 204 and the outer tube 203, communicates via the exhaust port 204a.

[0042] like Figure 2 As shown, in a top view, the preparation chamber 201a and the exhaust port 204a are opposite each other across the center of the wafer 200 housed in the processing chamber 201 (located on opposite sides at 180 degrees). In addition, the nozzles 410 and 420 are opposite each other across the center of the wafer 200 housed in the processing chamber 201.

[0043] like Figure 1As shown, manifold 209 is connected to exhaust pipe 231, which exhausts the atmosphere inside processing chamber 201, via exhaust passage 206. A vacuum pump 246, serving as a vacuum exhaust device, is connected to exhaust pipe 231 via pressure sensor 245 (pressure detector, i.e., pressure detection unit) in exhaust passage 206, i.e., processing chamber 201, and APC (Auto Pressure Controller) valve 243 (pressure regulator, i.e., pressure adjustment unit). APC valve 243 is configured such that by opening and closing the valve while vacuum pump 246 is operating, vacuum exhaust and vacuum exhaust stop within processing chamber 201 can be performed. Furthermore, by adjusting the valve opening based on pressure information detected by pressure sensor 245 while vacuum pump 246 is operating, the pressure inside processing chamber 201 can be adjusted. The exhaust system, i.e., the exhaust line, mainly consists of exhaust pipe 231, APC valve 243, and pressure sensor 245. Alternatively, exhaust port 204a, exhaust passage 206, and vacuum pump 246 can also be included in the exhaust system.

[0044] The lower opening of the manifold 209 serves as the furnace opening of the processing furnace 202. When the crystal boat 217 is raised using the crystal boat lift 115 (described later), it is hermetically sealed by the sealing cover 219, which acts as a cover, via an O-ring 220b. The sealing cover 219 is made of a metal material such as SUS and is formed in a disc shape. A rotation mechanism 267 for rotating the crystal boat 217 is provided below the sealing cover 219. The rotation shaft 255 of the rotation mechanism 267 passes through the sealing cover 219 and is connected to the crystal boat 217. The rotation mechanism 267 is configured to rotate the wafer 200 by rotating the crystal boat 217. The sealing cover 219 is configured to move vertically upwards and downwards via the crystal boat lift 115, which is vertically installed outside the outer tube 203 and serves as a lifting mechanism. The crystal boat lift 115 is configured as a conveying device (conveying mechanism) for moving the wafer 200 supported by the crystal boat 217 into and out of the processing chamber 201 by raising and lowering the sealing cover 219.

[0045] The wafer boat 217, serving as a substrate holder, is configured to hold multiple wafers 200 arranged in a horizontal orientation with their centers aligned, thus holding them in multiple layers. The wafer boat 217 includes substrate support pillars 400 supporting the wafers 200 and a heat insulation portion 218 disposed below the substrate support region 402 of the substrate support pillars 400. The processing tube 203 is capable of housing the wafer boat 217, which includes the substrate support pillars 400 and the heat insulation portion 218.

[0046] The heat insulation portion 218 has a cylindrical side wall portion 404 opposite to the inner wall 201A of the processing chamber 201 and an upper end portion 406 that closes the upper end of the side wall portion 404 facing the substrate support region 402. At least a portion of the surface of the upper end portion 406 opposite to the substrate support region 402 is formed of an upper surface portion 408 formed of a first material with a thermal conductivity greater than that of the second material forming the upper end of the side wall portion 404 and the substrate support column 400.

[0047] The upper surface portion 408 may also be configured to include at least the center of the upper end portion 406. This "center" may also be referred to as the "center point". Additionally, the outer edge 406A of the upper end portion 406 may be formed of a second material. The upper surface portion 408 may also be composed of a plate-like body 409 formed using a first material. In the illustrated example, the plate-like body 409 is configured as a circular plate. The first material is, for example, silicon carbide (SiC), and the second material is, for example, quartz (SiO2).

[0048] The plate-shaped body 409 may also be detachably mounted on the support portion 406B provided at the upper end 406. Specifically, the support portion 406B may have a recess 406C, and the plate-shaped body 409 may be mounted by fitting into the recess 406C. The support portion 406B may also be formed of a second material.

[0049] like Figure 5 As shown, the plate-shaped body 409 can also be configured such that its lower surface faces (exposes) the internal space 404B of the heat insulation portion 218. A through portion 406D is formed in the support portion 406B, and the plate-shaped body 409 is supported on the support portion 406B, which remains in a flange shape. Thus, the lower surface of the plate-shaped body 409 faces the internal space 404B of the heat insulation portion 218.

[0050] The heat insulation section 218 is preferably a hollow structure surrounded by the side wall section 404 and the upper end section 406 (i.e., a structure that does not house heat insulation plates or heaters). There is no heat insulation plate (not shown) supporting the heat insulation section 218, but it may support more than one heat insulation plate.

[0051] An opening 404A communicating with the internal space 404B of the heat insulation part 218 can also be provided in the side wall portion 404. For example... Figure 3 As shown, the opening 404A is provided, for example, at the lower end of the side wall portion 404, and is provided at multiple locations in the circumferential direction of the side wall portion 404.

[0052] The substrate support pillar 400 is configured to support multiple wafers 200 in a horizontal orientation, spaced apart from each other. For example... Figure 3As shown, the substrate support post 400 can also be erected on the base 412 located at the lowest part of the heat insulation portion 218. Alternatively, the substrate support post 400 can also be erected on, for example, the outer edge 406A of the upper end portion 406. In other words, the substrate support post 400 is disposed without contact with the upper surface portion 408.

[0053] A temperature sensor 263, which serves as a temperature detector, is installed inside the processing tube 203.

[0054] like Figure 6 As shown, the controller 121, or control unit (control unit), is configured as a computer equipped with a CPU (Central Processing Unit) 121a, RAM (Random Access Memory) 121b, storage device 121c, and I / O port 121d. The RAM 121b, storage device 121c, and I / O port 121d are configured to exchange data with the CPU 121a via an internal bus. An input / output device 122, such as a touch panel, is connected to the controller 121.

[0055] The storage device 121c is configured such as flash memory or HDD (Hard Disk Drive). The storage device 121c stores, in a readable manner, at least one of the following: a control program for controlling the temperature of the liquid raw material; a control program for controlling the operation of the substrate processing apparatus; and a process flow describing the steps and conditions of a semiconductor device manufacturing method described later. The process flow functions as a program, combining various steps in the semiconductor device manufacturing method described later, which can be executed by the substrate processing apparatus using a controller 121 configured as a computer to obtain a predetermined result. Hereinafter, the process flow, control program, etc., will be collectively referred to as a program. When using the term "program" in this specification, sometimes only the process flow unit is included, sometimes only the control program unit is included, or sometimes a combination of the process flow and the control program is included. The RAM 121b is configured as a storage area (working area) for temporarily holding programs, data, etc., read by the CPU 121a.

[0056] I / O port 121d is connected to at least one of the following: MFC 341a-341f, valves 343a-343f, pressure sensor 245, APC valve 243, vacuum pump 246, heater 207, temperature sensor 263, rotating mechanism 267, crystal boat lift 115, etc.

[0057] CPU 121a is configured to read and execute control programs from storage device 121c, and to read process data from storage device 121c based on input instructions from input / output device 122. CPU 121a is configured to control various gas flow adjustment operations performed using MFCs 341a-341f, opening and closing operations of valves 343a-343f, opening and closing operations of APC valve 243, pressure adjustment operations based on pressure sensor 245 performed using APC valve 243, temperature adjustment operations of heater 207 based on temperature sensor 263, start and stop of vacuum pump 246, rotation and speed adjustment operations of crystal boat 217 performed using rotation mechanism 267, lifting and lowering operations of crystal boat 217 performed using crystal boat lift 115, and the storage of wafer 200 into crystal boat 217, etc., according to the read process data.

[0058] The controller 121 is configured to install the aforementioned program stored in an external storage device (e.g., magnetic tape, floppy disk, hard disk, CD, DVD, MO, USB memory, memory card, etc.) 123 onto a computer. The storage device 121c and the external storage device 123 constitute a computer-readable storage medium. Hereinafter, they will be collectively referred to as storage medium. In this specification, the storage medium may sometimes consist only of the storage device 121c, sometimes only of the external storage device 123, or sometimes both. Furthermore, providing the program to the computer may also be done without using the external storage device 123, but rather using communication means such as the Internet or a dedicated line.

[0059] The control unit is configured to control the processing gas supply system and the etching gas supply system to perform processes such as supplying film-forming gas into the processing chamber 201 (processing container) to form a film on the wafer 200 (substrate) housed in the processing chamber 201, and supplying etching gas into the processing chamber 201 to remove the film deposited in the processing chamber 201.

[0060] (2) Substrate processing process

[0061] Next, as a step in the manufacturing process of the semiconductor device according to this embodiment, an example of a method for manufacturing a semiconductor device by forming a film on a wafer using the substrate processing apparatus 10 described above will be described. In the following description, the operation of each part constituting the substrate processing apparatus 10 is controlled by the controller 121.

[0062] The manufacturing method of semiconductor devices includes:

[0063] The process of supporting the wafer 200 on the aforementioned wafer boat 217 (substrate support);

[0064] A process of supplying film-forming gas into a processing chamber 201 containing a crystal boat 217 supporting a wafer 200.

[0065] The process of removing wafer 200 from crystal boat 217; and

[0066] The process of supplying etching gas into the processing chamber 201 of the crystal boat 217 containing the unsupported wafer 200.

[0067] When the term "wafer" is used in this specification, it sometimes refers to "the wafer itself," and sometimes to "a laminate (assembly) of a wafer and predetermined layers, films, etc., formed on its surface" (i.e., the case where it is called a wafer including predetermined layers, films, etc., formed on the surface). Furthermore, when the term "surface of a wafer" is used in this specification, it sometimes refers to "the surface (exposed surface) of the wafer itself," and sometimes to "the surface of predetermined layers, films, etc., formed on the wafer, i.e., the outermost surface of the wafer as a laminate." The use of the term "substrate" in this specification is also synonymous with the use of the term "wafer."

[0068] (A) Film-forming process

[0069] The following scenario will be described: Using a substrate processing apparatus 10, a film-forming gas is supplied to a wafer 200 to form a film containing predetermined elements on the wafer 200. In this method, a processing chamber 201, in which multiple wafers 200 are housed and supported on a wafer boat 217, is heated to a predetermined temperature. Then, a raw material gas supply step of supplying a raw material gas containing predetermined elements as a film-forming gas to the processing chamber 201 and a reactant gas supply step of supplying a reactant gas as a film-forming gas are performed a predetermined number of times (n times).

[0070] (Wafer loading)

[0071] Multiple wafers 200 are moved (loaded into the wafer boat) into the processing chamber 201. Specifically, when multiple wafers 200 are loaded (wafer loading) into the wafer boat 217, such as... Figure 2 As shown, a crystal boat 217 supporting multiple wafers 200 is lifted by a crystal boat elevator 115 and moved into the processing chamber 201. In this state, the sealing cap 219 closes the lower opening of the manifold 209 via an O-ring 220.

[0072] (Pressure and temperature adjustment)

[0073] Vacuum pump 246 is used to exhaust vacuum, bringing the processing chamber 201 to the required pressure (vacuum level). The pressure within the processing chamber 201 is measured by pressure sensor 245, and based on this measured pressure information, feedback control (pressure adjustment) is applied to APC valve 243. Vacuum pump 246 remains continuously operational at least until the processing of wafer 200 is complete. Additionally, heating is performed by heater 207 to bring the processing chamber 201 to the required temperature. At this time, feedback control (temperature adjustment) is applied to the electrical current supplied to heater 207 based on temperature information detected by temperature sensor 263, to achieve the required temperature distribution within the processing chamber 201. Heating of the processing chamber 201 by heater 207 continues at least until the processing of wafer 200 is complete.

[0074] Furthermore, the crystal boat 217 and the wafer 200 are rotated by the rotation mechanism 267. The rotation of the crystal boat 217 and the wafer 200 by the rotation mechanism 267 continues at least until the processing of the wafer 200 is completed.

[0075] (Film forming process)

[0076] Then, the following steps are performed sequentially: raw material gas supply step (first gas supply step), residual gas removal step, reaction gas supply step (second gas supply step), and residual gas removal step.

[0077] (Raw material gas supply steps)

[0078] Valve 343a is opened to allow the raw material gas to flow into the gas supply pipe 310. The raw material gas is supplied into the processing chamber 201 after its flow rate is adjusted by MFC 341a. Simultaneously, valve 343c is opened to allow the carrier gas, which serves as an inert gas, to flow into the gas supply pipe 342a. The carrier gas is supplied into the processing chamber 201 along with the raw material gas after its flow rate is adjusted by MFC 341c, and is discharged from the exhaust pipe 231. Furthermore, to prevent the raw material gas from intruding into the gas supply pipe 342d (preventing backflow), valve 343e is opened to allow the carrier gas to flow into the gas supply pipe 342d. Furthermore, to suppress contact between the raw material gas and the side wall portion 404 and / or the interior of the heat insulation portion 218, valve 343f is opened to supply inert gas, which serves as a purging gas, from the gas supply pipe 342f to the furnace opening portion of the processing chamber 201.

[0079] At this time, the APC valve 243 is adjusted appropriately so that the pressure in the processing chamber 201 is, for example, within the range of 1 to 1000 Pa, preferably 1 to 100 Pa, and more preferably 10 to 50 Pa. The expression "1 to 1000 Pa" in this specification means that the lower and upper limits are included within this range. Therefore, for example, "1 to 1000 Pa" means "more than 1 Pa and less than 1000 Pa". The same applies to other numerical ranges.

[0080] The supply flow rate of the feed gas controlled by MFC341a is, for example, in the range of 10 to 2000 sccm, preferably 50 to 1000 sccm, and more preferably 100 to 500 sccm.

[0081] The carrier gas supply flow rate controlled by the MFC341c is, for example, in the range of 1 to 30 slm. The time for supplying the raw material gas to the wafer 200 is, for example, in the range of 1 to 60 seconds, preferably 1 to 20 seconds, and more preferably 2 to 15 seconds. Here, as the inert gas used as the carrier gas, rare gases such as nitrogen (N2), argon (Ar), helium (He), neon (Ne), and xenon (Xe) can be used. One or more of these can be used as the inert gas. This is also the case for other inert gases described later.

[0082] The heater 207 heats the wafer 200 in a manner that brings the temperature to, for example, a range of 200–600°C, preferably 350–550°C, and more preferably 400–550°C.

[0083] As a raw material gas, for example, a metal-containing gas, namely aluminum (Al), is used, which contains a metallic element, i.e., an Al-containing raw material gas (Al-containing raw material, Al-containing gas). As an Al-containing raw material gas, for example, halogen-containing Al gases such as aluminum chloride (AlCl3) gas, and organic Al gases such as trimethylaluminum ((CH3)3Al, TMA) gas can be used.

[0084] By supplying a raw material gas to the processing chamber 201 under the aforementioned conditions, a first layer is formed on the outermost surface of the wafer 200. For example, when using Al-containing gas as the raw material gas, an Al-containing layer is formed as the first layer. The Al-containing layer can be an Al-containing gas, an adsorption layer formed by the decomposition of a portion of the Al-containing gas (physical adsorption layer, chemisorption layer), or an Al deposition layer (Al layer).

[0085] (Residual gas removal step)

[0086] Next, valve 343a is closed to stop the supply of raw material gas. At this time, APC valve 243 remains open, and vacuum pump 246 is used to vent the processing chamber 201, removing any unreacted or unproductive raw material gas remaining in the processing chamber 201. Valves 343c, 343e, and 343f remain open to maintain the supply of carrier gas to the processing chamber 201.

[0087] (Reaction gas supply step)

[0088] After removing residual gas from processing chamber 201, valve 343d is opened to allow the reaction gas to flow within gas supply pipe 342d. The reaction gas flow rate is adjusted via MFC 341d, supplying the wafer 200 within processing chamber 201 from gas supply pipe 342d and discharging from exhaust pipe 231. In other words, wafer 200 is exposed to the reaction gas.

[0089] At this time, valve 343e is opened, allowing the carrier gas to flow within gas supply pipe 342e. The carrier gas, with its flow rate adjusted via MFC 341e, is supplied to the processing chamber 201 along with the reactant gas and discharged from exhaust pipe 231. To prevent the reactant gas from entering gas supply pipe 342a (preventing backflow), valve 343c is opened, allowing the carrier gas to flow into gas supply pipe 342a. Furthermore, similar to the feed gas supply step, to suppress contact between the reactant gas and the side wall portion 404 of the insulation portion 218 and / or the interior of the insulation portion 218, valve 343f is opened, and inert gas, used as purge gas, is supplied from gas supply pipe 342f to the furnace opening portion of the processing chamber 201. However, in this step, the supply flow rate of the purge gas from gas supply pipe 342f can be reduced or stopped compared to the feed gas supply step.

[0090] At this time, the APC valve 243 is adjusted appropriately to bring the pressure in the processing chamber 201 to, for example, a range of 1 to 1000 Pa. The supply flow rate of the reaction gas controlled by the MFC 341d is, for example, a range of 5 to 40 slm, preferably 5 to 30 slm, and more preferably 10 to 20 slm. The time for supplying the reaction gas to the wafer 200 is, for example, set to a range of 1 to 60 seconds. Other processing conditions are set to the same conditions as those described in the feed gas supply step.

[0091] A reactant gas is a gas that reacts with the reactant gas, such as an oxidizing gas. Oxidizing gases can include oxygen (O2), ozone (O3), plasma-excited O2 (O2*), O2 + hydrogen (H2), water vapor (H2O), hydrogen peroxide (H2O2), nitrous oxide (N2O), nitric oxide (NO), nitrogen dioxide (NO2), carbon monoxide (CO), carbon dioxide (CO2), and other oxygen-containing (O) gases. More than one of these can be used as the oxidizing gas.

[0092] At this time, the gases flowing in the processing chamber 201 are only reactive gases and inert gases. The reactive gases react with at least a portion of the first layer formed on the wafer 200 in the feed gas supply step. That is, the Al-containing layer formed as the first layer in the feed gas supply step is oxidized to form an aluminum oxide layer (AlO layer) containing Al and O as the second layer, which is a metal oxide layer. In other words, the Al-containing layer is modified into an AlO layer.

[0093] (Residual gas removal step)

[0094] Next, valve 324 is closed to stop the supply of reaction gas. Then, through the same treatment steps as the residual gas removal step after the raw material gas supply step, unreacted or reaction gases and reaction byproducts remaining in the treatment chamber 201 that contribute to the formation of the second layer are removed from the treatment chamber 201.

[0095] The above-described steps of feeding raw gas, removing residual gas, feeding reactant gas, and removing residual gas are repeated a predetermined number of times (at least once). In this way, by performing batch processing (multiple steps), a film is formed on wafer 200. Thus, an aluminum oxide film (AlO film), for example, comprising Al and O, is formed on wafer 200.

[0096] Furthermore, in the above film-forming process, a film (deposits) adheres to (deposits) on the inner wall of the processing chamber 201 (for example, sometimes including the inner wall of the inner tube 204, the inner wall of the manifold 209, etc.) and the upper surface 408 of the heat insulation portion 218, which are in contact with the raw material gas and the reaction gas. This film adhering to the processing chamber 201 becomes a major cause of particle (foreign matter) generation in subsequent film-forming processes, sometimes leading to a decrease in the quality of the film and device formed on the wafer 200. Therefore, in the semiconductor device manufacturing method of this embodiment, the film adhering to the processing chamber 201 is removed in the cleaning process described later. The deposits adhering to the processing chamber, etc., sometimes include films with the same composition as the films formed on the wafer 200, and sometimes also include byproducts generated during the film-forming process. Furthermore, sometimes they also include components such as quartz peeled off from the inner surface of the inner tube 204. In this embodiment, by providing the cover 204b, the adhesion of deposits to the surface of the side wall portion 404 of the heat insulation portion 218 can be suppressed. Therefore, by simply removing the deposits attached to the portion facing the substrate support area 402 in the cleaning process described later, the generation of particles and the like caused by the deposits can be effectively suppressed.

[0097] Batch processing refers to a process in which a film is formed on wafer 200 by sequentially performing a raw material gas supply step, a residual gas removal step, a reactant gas supply step, and a residual gas removal step a predetermined number of times. Then, the film is formed on wafer 200 in one batch.

[0098] (Post-purging and atmospheric pressure recovery)

[0099] Inert gas is supplied into the processing chamber 201 through gas supply pipes 342a, 342d, and 342f, and discharged through exhaust pipe 231. The inert gas acts as a purging gas, thereby purging the processing chamber 201 and removing any residual gases and byproducts (post-purging). Afterward, the atmosphere in the processing chamber 201 is replaced with inert gas (inert gas replacement), and the pressure inside the processing chamber 201 is restored to atmospheric pressure (atmospheric pressure restoration).

[0100] (Wafer removal)

[0101] Next, the sealing cover 219 is lowered by the crystal boat lift 115, opening the lower end of the manifold 209. Then, with the processed wafer 200 supported by the crystal boat 217, it is moved out from the lower end of the processing tube 203 (crystal boat unloading). Afterward, the processed wafer 200 is removed from the crystal boat 217 (wafer removal).

[0102] (B) Cleaning Procedure

[0103] Next, the process of etching the film attached to the treatment chamber 201, etc., in the film formation process (cleaning process) will be explained.

[0104] (Storage of the crystal boat (loading of the crystal boat))

[0105] After removing the wafer 200 from the processing chamber 201, the empty wafer 217 is returned to the processing chamber 201. In this state, the sealing cap 219 closes the lower opening of the manifold 209 via the O-ring 220.

[0106] (Pressure and temperature adjustment)

[0107] Vacuum pump 246 is used to exhaust vacuum, bringing the processing chamber 201 to the required pressure (vacuum level). The pressure within the processing chamber 201 is measured by pressure sensor 245, and based on this measured pressure information, APC valve 243 is controlled via feedback (pressure adjustment). Vacuum pump 246 remains continuously operational at least until the processing of wafer 200 is complete. Additionally, heating is performed by heater 207 to bring the processing chamber 201 to the required temperature. The electrical current supplied to heater 207 is controlled via feedback (temperature adjustment) based on temperature information detected by temperature sensor 263 to achieve the required temperature distribution within the processing chamber 201. Heating of the processing chamber 201 by heater 207 continues at least until the etching process is complete.

[0108] (Etching (cleaning) process)

[0109] The process chamber 201 is cleaned by etching the film attached to it.

[0110] (Etching step)

[0111] Open valve 343b to allow etching gas (cleaning gas) to flow within gas supply pipe 342a. The etching gas flow rate is adjusted by MFC 341b and supplied from gas supply pipe 342b through nozzle 410 into processing chamber 201, then discharged from exhaust pipe 231. Simultaneously, open valve 343c to allow inert gas to flow within gas supply pipe 342a. The inert gas flowing within gas supply pipe 342a is flow rate adjusted by MFC 341c and, as a dilution gas (or carrier gas), is supplied to processing chamber 201 along with the etching gas, then discharged from exhaust pipe 231. To prevent etching gas from entering gas supply pipes 342d and 342f, valves 343d and 343f can also be opened to allow inert gas to flow within gas supply pipes 342d and 342f.

[0112] Halogen-containing gases such as boron trichloride (BCl3), silicon tetrachloride (SiCl4), hydrogen chloride (HCl), chlorine (Cl2), fluorine (F2), hydrogen fluoride (HF), silicon tetrafluoride (SiF4), nitrogen trifluoride (NF3), chlorine trifluoride (ClF3), boron tribromide (BBr3), silicon tetrabromide (SiBr4), and bromine (Br2) can be used as etching gases. More than one of these gases can be used as etching gases.

[0113] By supplying etching gas, deposits adhering to the processing chamber 201 (particularly those facing the substrate support region 402, the inner wall of the inner tube 204, the substrate support pillar 400 of the crystal boat 217, and the surface adhering to the upper surface portion 408) react with the etching gas and are removed from the processing chamber 201. For example, when using SiCl4 gas as the etching gas, by supplying SiCl4 gas, at least a portion of the AlO film adhering to the processing chamber 201 reacts with the SiCl4 gas and is removed from the processing chamber 201.

[0114] At this time, the heater 207 is controlled by the controller 121 to heat the processing chamber 201 to a predetermined temperature, for example, within the range of 200 to 800°C, preferably 400 to 650°C, thereby activating the etching gas. Here, the upper surface portion 408 of the heat insulation portion 218 is composed of a plate-shaped body 409 made of a first material with high thermal conductivity, and is therefore uniformly heated in-plane by the heater 207. As a result, the deposits adhering to the surface of the upper surface portion 408 can be removed efficiently and uniformly. In addition, at this time, the APC valve 243 is closed, or substantially closed to a degree that does not affect the processing, to seal the etching gas into the processing chamber 201. By sealing the etching gas, the effect of the aforementioned reaction delay on etching can be reduced. Furthermore, the pressure in the processing chamber 201 is maintained at a predetermined pressure, for example, within the range of a first pressure, for example, 1 to 40,000 Pa, preferably 10,000 to 30,000 Pa, more preferably 20,000 to 30,000 Pa. The supply flow rate of the etching gas controlled by the MFC341b is, for example, 1 to 10 slm, preferably in the range of 3 to 8 slm. The time for supplying the etching gas to the processing chamber 201 is, for example, set to a time in the range of 60 to 600 seconds.

[0115] (Residual gas removal step)

[0116] After supplying etching gas to the processing chamber 201 for a predetermined time, valve 343b is closed to stop the supply of etching gas. APC valve 243 is then opened, provided it is closed or substantially closed to a degree that does not affect the processing. Then, unreacted or etched gas remaining in the processing chamber 201, or any gas that contributes to film removal, is removed from the processing chamber 201 through the same processing steps as the residual gas removal step described above during the film formation process.

[0117] (Number of scheduled implementations)

[0118] The membrane adhering to the treatment chamber 201 is removed by repeating the above steps at least once (a predetermined number of times (m times)). It is preferable to repeat the above cycle multiple times.

[0119] (3) Effects

[0120] According to this disclosure, by making at least a portion of the upper surface of the heat insulation portion 218 with a first material whose thermal conductivity is greater than that of the second material constituting the other portions of the heat insulation portion 218, at least one of the following—heat dissipation to the upper end of the sidewall portion 404 of the heat insulation portion 218, temperature drop of the upper surface, and temperature unevenness—can be suppressed. Therefore, when using etching gas to remove the deposited film, the removal efficiency of the deposited film on the upper surface can be improved, and the amount of powdery particles caused by residue of the deposited film on the upper surface can be reduced.

[0121] During the film-forming process, the surface of the sidewall portion 404 is purged with an inert gas, thereby suppressing film buildup on the sidewall portion 404. This limits the cleaning target area where film buildup would occur to the upper end only. Therefore, even if only a portion with high thermal conductivity is provided at the upper end 406 as in this embodiment, a sufficient reduction in particles and the like can be achieved.

[0122] During the film-forming process, by allowing inert gas to flow from the lower end of the sidewall portion 404 toward the upper end, it is possible to suppress the inflow of film-forming gas into the space between the inner wall of the processing chamber 201 and the sidewall portion 404.

[0123] When the upper surface portion 408 includes at least the center of the upper end portion 406, it is possible to suppress the temperature drop of the surface near the center, which is most prone to temperature drop.

[0124] When the outer edge 406A of the upper end 406 is formed of a second material, it is possible to suppress the temperature drop and temperature unevenness of the upper surface portion 408 caused by heat dissipation to the side wall portion 404 through the outer edge 406A.

[0125] When the plate-shaped body 409 is configured such that its lower surface faces the internal space 404B of the heat insulation part 218, the contact area between the support part 406B formed of the second material and the lower surface of the upper surface part 408 is reduced, and the heat dissipation generated through the contact surface is reduced, thereby further suppressing the temperature drop and temperature unevenness of the upper surface part 408.

[0126] As described above, the first material can be silicon carbide (SiC), and the second material can be quartz (SiO2). For example, as in the embodiment, when using BCl3 gas as the etching gas to etch the AlO film as a deposited film, it is preferable to choose SiC, which is difficult to etch using BCl3 gas, as the first material. Other materials that can be used as the first material include Si, AlO, etc., which have a higher thermal conductivity than quartz. However, it is preferable to select a material that is not etched or is difficult to etch, depending on the etching gas used when removing the deposited film.

[0127] In the case where the heat insulation portion 218 has a hollow structure surrounded by the side wall portion 404 and the upper end portion 406, the internal space 404B of the heat insulation portion 218 can be easily and efficiently purged. However, since there is no heater or heat insulation body inside, there is a problem that heat loss can easily occur due to heat radiation from the upper surface of the heat insulation portion 218 to the internal space of the heat insulation body. In the present disclosure, in particular, it is possible to suppress the temperature drop and temperature unevenness of the upper surface of the heat insulation portion 218 caused by heat loss due to the hollow internal structure of such a heat insulation portion 218.

[0128] An opening 404A communicating with the internal space 404B of the heat insulation section 218 is provided in the side wall portion 404. During the film-forming process, when inert gas is supplied from the gas supply pipe 342f to the outer peripheral space of the heat insulation section 218, this inert gas flows into the internal space 404B through the opening 404A in the side wall portion 404 of the heat insulation section 218. This allows the internal space 404B of the heat insulation section 218 to be purged using inert gas. Furthermore, during the film-forming process, when inert gas is supplied directly to the internal space of the heat insulation section 218 (e.g., when a nozzle for supplying inert gas is provided in the internal space), the internal space 404B can also be purged using inert gas. Therefore, it is possible to suppress the inflow of film-forming gas into the internal space 404B, thus preventing film deposition. In other words, it is possible to further suppress the generation of particles and the like caused by film deposition.

[0129] By non-contactly disposing the substrate support post 400 on the upper surface portion 408, heat dissipation from the upper surface portion 408 to the substrate support post 400 can be reduced.

[0130] The thermal expansion rate of the film deposited on the inner wall of the processing chamber 201 and the upper surface portion 408 of the heat insulation portion 218 by supplying film-forming gas into the processing chamber 201 is preferably closer to the thermal expansion rate of the first material than that of the second material. In this case, cracks in the deposited film on the upper surface portion 408 are less likely to occur. In addition to suppressing the formation of powdery particles in the deposited film caused by cracks, the generation of powdery particles of the material constituting the upper surface portion 408 caused by cracks in the surface of the upper surface portion 408 that occur with the cracks in the deposited film can also be suppressed.

[0131] (program)

[0132] A program that is executed by a computer on a substrate processing device:

[0133] The step of supporting the wafer 200 on the aforementioned crystal boat 217;

[0134] The step of supplying film-forming gas into the processing chamber 201 containing the crystal boat 217 supporting the wafer 200;

[0135] The steps for removing wafer 200 from crystal boat 217; and

[0136] The step of supplying etching gas into the processing chamber 201 of the crystal boat 217 containing the unsupported wafer 200.

[0137] The program can also be recorded in a storage medium.

[0138] Furthermore, the above method describes an example of forming an AlO film on wafer 200 and using an etching gas to etch (remove) the AlO film deposited in the furnace; however, in this disclosure, the type of film is not particularly limited. Additionally, the types of gases used in the film formation process, such as raw material gases and reaction gases, are not particularly limited.

[0139] The process procedures (programs containing processing steps, processing conditions, etc.) used in the formation of these various thin films are preferably prepared separately (multiple procedures are prepared) according to the content of substrate processing, cleaning processing, etc. (film type, composition ratio, film quality, film thickness, processing steps, processing conditions, etc.). Furthermore, when starting substrate processing, cleaning processing, etc., it is preferable to appropriately select an appropriate process procedure or cleaning process from among the multiple process procedures or cleaning processes, based on the content of substrate processing, cleaning processing, etc. Specifically, it is preferable to pre-store (install) the multiple process procedures or cleaning processes, prepared separately according to the content of substrate processing, cleaning processing, etc., in the storage device 121c of the substrate processing apparatus via an electrical communication line and a storage medium (external storage device 123) recording the process procedures or cleaning processes, etc. Furthermore, it is preferable that when starting substrate processing, the CPU 121a of the substrate processing apparatus appropriately selects an appropriate process procedure or cleaning process from among the multiple process procedures or cleaning processes stored in the storage device 121c, based on the content of substrate processing. This configuration allows for the versatile and reproducible formation of thin films of various types, compositions, qualities, and thicknesses within a single substrate processing apparatus. Furthermore, it reduces the operator's workload (inputting processing steps, conditions, etc.), prevents operational errors, and enables rapid commencement of substrate processing.

[0140] Furthermore, this disclosure can also be implemented, for example, by changing the process technology or cleaning process of an existing substrate processing apparatus. When changing the process technology or cleaning process, the process technology or cleaning process according to this disclosure can also be installed in an existing substrate processing apparatus via an electrical communication line or a storage medium recording the process technology or cleaning process, or the input / output device of an existing substrate processing apparatus can be operated to change the process technology or cleaning process itself to the process technology or cleaning process according to this disclosure.

[0141] The foregoing has specifically described one method and variation of this disclosure. However, this disclosure is not limited to the above method and variation, and various changes can be made without departing from its spirit.

Claims

1. A substrate processing apparatus, characterized in that, have: Substrate support pillars, which support the substrate; A heat insulation portion is disposed below the substrate support area of ​​the substrate support pillar; and The processing container houses the substrate support pillars and the heat insulation portion. The heat insulation portion includes: a cylindrical sidewall portion opposite to the inner wall of the processing container, the sidewall portion having an opening communicating with the internal space of the heat insulation portion; and an upper end portion facing the substrate support area and closing the upper end of the sidewall portion, and the heat insulation portion having a hollow structure surrounded by the sidewall portion and the upper end portion, wherein no heat insulation plate or heater is housed in the hollow structure. At least a portion of the surface of the upper end opposite the substrate support region is formed by an upper surface portion, which is formed by a first material having a thermal conductivity greater than that of the second material forming the upper end of the sidewall portion and the substrate support column.

2. The substrate processing apparatus according to claim 1, characterized in that, The substrate support pillar is configured to support a plurality of substrates in a horizontal position and in a spaced-apart state.

3. The substrate processing apparatus according to claim 1, characterized in that, It also includes an inert gas supply system that supplies inert gas between the inner wall and the side wall of the processing container.

4. The substrate processing apparatus according to claim 1, characterized in that, The upper surface portion is configured to include at least the center of the upper end portion.

5. The substrate processing apparatus according to claim 4, characterized in that, The outer edge of the upper end is formed of the second material.

6. The substrate processing apparatus according to claim 1, characterized in that, The upper surface portion is composed of a plate-like body formed from the first material.

7. The substrate processing apparatus according to claim 6, characterized in that, The plate-shaped body is detachably mounted on the support portion, which is located at the upper end.

8. The substrate processing apparatus according to claim 7, characterized in that, The support portion has a recess. The plate-like body is installed by embedding it into the recess.

9. The substrate processing apparatus according to claim 7, characterized in that, The support portion is formed of the second material.

10. The substrate processing apparatus according to claim 1, characterized in that, The first material is silicon carbide, and the second material is quartz.

11. The substrate processing apparatus according to any one of claims 1 to 10, characterized in that, It is equipped with an inert gas supply system that supplies inert gas to at least one of the outer peripheral space and the inner space of the insulation part.

12. The substrate processing apparatus according to claim 1, characterized in that, The substrate support column is erected on the base located at the lowest part of the heat insulation section.

13. The substrate processing apparatus according to claim 1, characterized in that, It also includes a heater, which is located on the outside of the heat insulation portion and facing the substrate support area.

14. The substrate processing apparatus according to claim 1, characterized in that, It also includes a film-forming gas supply unit configured to supply film-forming gas into the processing container. The thermal expansion rate of the film deposited on the inner wall and upper surface of the processing container by supplying the film-forming gas into the processing container is closer to that of the first material than that of the second material.

15. The substrate processing apparatus according to any one of claims 1-10, characterized in that, It is equipped with an inert gas supply system that supplies inert gas to the interior space of the heat insulation part through the opening provided on the side wall.

16. The substrate processing apparatus according to claim 15, characterized in that, The inert gas supply system is located on the outside of the heat insulation portion and is configured to supply inert gas to the space between the inner wall and the side wall portion of the processing container.

17. A method for manufacturing a semiconductor device, characterized in that, have: A process for supporting a substrate on a substrate support member, the substrate support member comprising: a substrate support column supporting the substrate; and a heat insulation portion disposed below the substrate support area of ​​the substrate support column, the heat insulation portion comprising: a cylindrical sidewall portion facing the inner wall of a processing container, the sidewall portion having an opening communicating with the internal space of the heat insulation portion; and an upper end portion facing the substrate support area and closing the upper end of the sidewall portion, and the heat insulation portion having a hollow structure surrounded by the sidewall portion and the upper end portion, the hollow structure not housing a heat insulation plate or a heater, at least a portion of the surface of the upper end portion facing the substrate support area being formed by an upper surface portion, the upper surface portion being formed by a first material having a thermal conductivity greater than that of the second material forming the upper end of the sidewall portion and the substrate support column; A process of supplying film-forming gas into the processing container containing the substrate support member in a state of supporting the substrate. The process of removing the substrate from the substrate support; and A process of supplying etching gas into a processing container that houses a substrate support member in a state where the substrate is not supported.

18. A substrate support member, characterized in that, have: Substrate support pillars that support the substrate; and A heat insulation component is disposed below the substrate support area of ​​the substrate support pillar. The heat insulation portion includes: a cylindrical sidewall portion opposite to the inner wall of the processing container, the sidewall portion having an opening communicating with the internal space of the heat insulation portion; and an upper end portion facing the substrate support area and closing the upper end of the sidewall portion, and the heat insulation portion having a hollow structure surrounded by the sidewall portion and the upper end portion, wherein no heat insulation plate or heater is housed in the hollow structure. At least a portion of the surface of the upper end opposite the substrate support region is formed by an upper surface portion, which is formed by a first material having a thermal conductivity greater than that of the second material forming the upper end of the sidewall portion and the substrate support column.

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