Substrate processing apparatus and substrate processing method

Abstract

A substrate processing apparatus and a substrate processing method are provided. A substrate processing apparatus according to one embodiment includes a substrate holding portion having a stage that holds a substrate substantially horizontally, a frozen liquid supply portion that supplies a frozen liquid to the substrate, a cooling portion that cools the frozen liquid to form a frozen film, and a nozzle that extends in a first direction including a center portion of the stage in a plan view, one end of the first direction and the other end on the opposite side of the one end being located at an outer circumferential portion outside the center portion. The substrate processing apparatus includes a thawed liquid supply portion that supplies a thawed liquid to the substrate, the thawed liquid being different from the frozen liquid in at least one of a supply amount, a temperature, and a supply timing at the center portion and the outer circumferential portion, and thaws the frozen film.

Description

[0001] Related applications

[0002] This application is based on and claims the benefit of priority arising from the prior Japanese patent application No. 2022-46097 filed on March 22, 2022, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The embodiments of the present invention relate to a substrate processing apparatus and a substrate processing method. Background Technology

[0004] Freeze cleaning technology is known as one of the cleaning techniques for removing particles and other deposits attached to the surface of a substrate. In this technology, after freezing a freezing liquid supplied to the substrate surface, a thawing liquid is supplied to thaw the frozen film, thereby removing particles and other deposits from the substrate surface. Summary of the Invention

[0005] The embodiments disclosed herein provide a substrate processing apparatus and a substrate processing method for improving the efficiency of freezing and cleaning of substrates.

[0006] One embodiment of the substrate processing apparatus includes: a substrate holding section having a platform for holding the substrate substantially horizontally; a freezing liquid supply section for supplying freezing liquid to the substrate; a cooling section for cooling the freezing liquid to form a freezing film; and a nozzle, which, when viewed from above, extends in a first direction including a central portion of the platform, with one end in the first direction and the other end opposite to that end located on an outer periphery outside the central portion. The substrate processing apparatus includes a defrosting liquid supply section that supplies at least one different defrosting liquid to the substrate at the central portion and the outer periphery, based on the supply amount, temperature, and supply timing, to defrost the freezing film.

[0007] Based on the above configuration, a substrate processing apparatus and a substrate processing method that improve the efficiency of freezing and cleaning of substrates can be provided. Attached Figure Description

[0008] Figure 1 This is a diagram that schematically illustrates the overall configuration of a substrate processing apparatus according to one embodiment.

[0009] Figure 2 This is a bottom view that schematically illustrates the construction of a nozzle according to one embodiment.

[0010] Figure 3 The long side end of the nozzle involved in one embodiment ( Figure 2 YZ cross-section at location A).

[0011] Figure 4 The central portion of the long side of a nozzle involved in one embodiment ( Figure 2 YZ cross-sectional view at position A').

[0012] Figure 5 The short side center portion of the nozzle involved in one embodiment ( Figure 2 XZ cross-sectional view at position B).

[0013] Figure 6 This is a diagram that schematically illustrates a substrate processing method according to one embodiment.

[0014] Figure 7 This is a bottom view that roughly shows the construction of a nozzle involved in a variation.

[0015] Figure 8 This is a bottom view that schematically illustrates the construction of a nozzle according to one embodiment.

[0016] Figure 9 The long side end of the nozzle involved in one embodiment ( Figure 8 YZ cross-section at location A).

[0017] Figure 10 The central portion of the long side of a nozzle involved in one embodiment ( Figure 8 YZ cross-sectional view at position A').

[0018] Figure 11 The short side center portion of the nozzle involved in one embodiment ( Figure 8 XZ cross-sectional view at position B).

[0019] Figure 12 This is a diagram that schematically illustrates the overall configuration of the liquid supply unit according to one embodiment.

[0020] Figure 13 This is a bottom view that schematically illustrates the construction of a nozzle according to one embodiment.

[0021] Figure 14 This indicates the conditions of a substrate processing method according to one embodiment.

[0022] Figure 15 This is a diagram illustrating a substrate processing method according to one embodiment. Detailed Implementation

[0023] Hereinafter, the substrate processing apparatus and substrate processing method according to this embodiment will be described in detail with reference to the accompanying drawings. In the following description, elements having substantially the same function and structure will be labeled with the same reference numerals or reference numerals followed by letters, and will be described repeatedly only where necessary. The embodiments shown below illustrate apparatus and methods for embodying the technical concept of the embodiments. Various modifications may be made to the embodiments without departing from the spirit of the invention. These embodiments and their variations are all included within the scope of the invention as described in the claims and its equivalents.

[0024] To make the description clearer, the accompanying drawings may sometimes schematically show the width, thickness, shape, etc. of various parts compared to the actual embodiment, but this is merely an example and not a limitation of the interpretation of the invention. In this specification and the accompanying drawings, elements that have the same function as those described based on the drawings are sometimes labeled with the same reference numerals, omitting repeated descriptions.

[0025] Unless otherwise specified, the statement "α includes A, B, or C" in this specification does not exclude the possibility that α includes a combination of multiple A through C. Furthermore, these statements do not exclude the possibility that α includes other elements.

[0026] In this specification, horizontal sometimes refers to the direction that is horizontal relative to the platform of the substrate processing apparatus (XY direction), and vertical sometimes refers to the direction that is substantially perpendicular to the horizontal direction (Z direction).

[0027] The following implementation methods can be combined with each other without causing technical contradictions.

[0028] In the following embodiments, semiconductor substrates such as silicon wafers are used as examples of substrates, but the technology disclosed herein can be applied to substrates other than semiconductor substrates (e.g., glass substrates, quartz substrates, etc.) where it is necessary to remove particles or other deposits attached to the substrate surface.

[0029] <First Implementation>

[0030] [Substrate Processing Apparatus] Figure 1 This diagram schematically illustrates the overall configuration of a substrate processing apparatus according to one embodiment. The substrate processing apparatus 1 according to this embodiment is, for example, an apparatus for performing the following freeze-cleaning process: supplying a freezing liquid to the surface of a semiconductor substrate, cooling the freezing liquid to form a freeze film, and supplying a thawing liquid to thaw the freeze film, thereby removing particles, etc., from the substrate surface. Furthermore, the surface of the semiconductor substrate is, for example, the surface on which a three-dimensional NAND or other semiconductor device is formed. For example, a circuit pattern (not shown) is formed on the surface of the semiconductor substrate. Figure 1As shown, the substrate processing apparatus 1 includes a liquid supply unit 10, a substrate holding unit 20, and a cooling unit 30.

[0031] The substrate holding unit 20 includes a platform 21, a rotation mechanism 22, and a control unit 23. The platform 21 holds the substrate S. The platform 21 can hold a wafer-shaped (disk-shaped) substrate S with a circular upper surface in the XY direction, such that the main surface of the substrate S is horizontal (XY direction). The center of the substrate S is located at the center C of the platform 21. The platform 21 rotates about a vertical axis (dashed line) including the center C via the rotation mechanism 22. The platform 21 can rotate clockwise or counterclockwise. As the platform 21 rotates, the substrate S held by the platform 21 rotates about the center C. The rotational action and speed of the platform 21, driven by the rotation mechanism 22, are controlled by the control unit 23. The rotational speed of the platform 21 controlled by the control unit 23 is, for example, 100 rpm or more and 500 rpm or less.

[0032] A liquid supply unit 10 is disposed above platform 21. The liquid supply unit 10 includes a nozzle 11, a flow path 12, a valve 13, a filter 14, a liquid supply device 15, and a drive mechanism 16. The liquid supply unit 10 supplies freezing or thawing fluid to platform 21 (here, without distinguishing between freezing and thawing fluid, it is referred to as liquid). The flow path 12 is connected to the liquid supply device 15. Here, the freezing and thawing fluid is, for example, deionized water (DIW). The liquid supply device 15 supplies liquid to the flow path 12 while adjusting the flow rate and temperature. The valve 13 and the filter 14 are sequentially disposed between the liquid supply device 15 and the nozzle 11. Liquid is supplied to platform 21 from nozzle 11 via filter 14 by opening valve 13. The drive mechanism 16, for example, can move the liquid supply unit 10 above platform 21 when substrate S is moved in and out relative to substrate processing device 1.

[0033] The nozzle 11 is positioned above the platform 21 and extends in the diametrical direction (X direction, long side direction) encompassing the center C of the platform 21. For example, one end of the nozzle 11 in the long side direction is located outside the center of the platform 21 when viewed from above, and the other end in the long side direction is also located outside the center of the platform 21. The nozzle 11 includes a liquid reservoir 111 and a liquid supply port 112. Liquid supplied from the flow path 12 is temporarily retained in the liquid reservoir 111. The liquid retained in the liquid reservoir 111 is ejected from the liquid supply port 112 onto the substrate S, which is opposite to the cleaning area (main surface) of the substrate S placed on the platform 21. By having the nozzle 11 have the liquid reservoir 111, the flow rate of the liquid supplied from the flow path 12 can be controlled, and the pressure applied to the connection between the flow path 12 and the liquid reservoir 111 can be dispersed. By having the nozzle 11 have the liquid reservoir 111, the flow rate of the liquid ejected from the liquid supply port 112 can be controlled. In this embodiment, the nozzle 11 is rectangular, but the shape of the nozzle 11 is not particularly limited as long as it allows the liquid supply port 112 described later to be configured. The shape of the liquid reservoir 111 is also not particularly limited, as long as it can adequately hold the liquid ejected from the liquid supply port 112.

[0034] use Figures 1 to 5 The configuration and shape of the liquid supply port 112 of the nozzle 11 are described in detail. Figure 2 This is a bottom view that schematically illustrates the construction of a nozzle according to one embodiment. Figure 3 It is the long side end of nozzle 11 ( Figure 2 YZ cross-section at location A). Figure 4 It is the central part of the long side of nozzle 11 ( Figure 2 YZ cross-sectional view at position A'). Figure 5 It is the central part of the short side of nozzle 11 ( Figure 2 XZ cross-sectional view at position B).

[0035] The liquid supply port 112 is configured as a slit with a length approximately the same as the diameter of the substrate S in the X direction extending from the nozzle 11. That is, the width w of the liquid supply port 112 in the long side direction (X direction) is approximately the same as the diameter of the substrate S. The two ends of the long side of the liquid supply port 112 (… Figure 2 Position A) is located at both ends (outer periphery) of the diameter of the substrate S. That is, at both ends of the long side of the liquid supply port 112. Figure 2 Position A) is located approximately at both ends (outer periphery) of the platform's diameter. The center of the long side of the liquid supply port 112 ( Figure 2The position A') is located at the center of the substrate S (center C of platform 21). The width w of the long side (X direction) of the liquid supply port 112 has a length approximately the same as the diameter of the substrate S, so that if the platform 21 rotates, liquid can be supplied from the liquid supply port 112 to approximately the entire surface of the substrate S simultaneously. However, this is not a limitation; the width w of the liquid supply port 112 in the long side (X direction) can also be approximately the same as the radius of the substrate S. In this case, the two ends of the long side of the liquid supply port 112 are positioned at the two ends of the radius of the substrate S (outer periphery and center).

[0036] Both ends of the long side ( Figure 2 The width w1 of the liquid supply port 112 at position A in the short side direction (Y direction) is greater than that of the center of the long side. Figure 2 The width w2 of the liquid supply port 112 at position A' in the short side direction (Y direction). That is, the width w1 of the liquid supply port 112 opposite to the outer periphery of the substrate S is greater than the width w2 of the liquid supply port 112 opposite to the center of the substrate S. Preferably, the widths of the two ends of the long side ( Figure 2 The width w1 of the liquid supply port 112 at position A in the short side direction (Y direction) is the center of the long side ( Figure 2 The width w2 of the liquid supply port 112 at position A' is more than 1.4 times but less than 2 times the width of the liquid supply port 112 in the short side direction (Y direction).

[0037] The two ends of the long side of the liquid supply port 112 involved in this embodiment ( Figure 2 The width w1 at position A) and the center of the long side ( Figure 2 The width w2 at position A' is different, thus the liquid supply can be controlled. The liquid supply port 112 is located at both ends of its long side ( Figure 2 The width w1 at position A is greater than the width at the center of the long side ( Figure 2 The width w2 at position A' is such that the liquid supply port 112 flows from both ends of its long side. Figure 2 The supply rate of liquid ejected from position A is higher than that from the center of the long side of liquid supply port 112. Figure 2 The liquid supplied from position A' is greater. Therefore, the substrate processing apparatus 1 according to this embodiment can supply more liquid to the outer periphery of the substrate S than to the central part.

[0038] In this embodiment, the liquid supply unit 10 is shown to supply freezing liquid or thawing liquid to the platform 21. However, this is not a limitation, and the freezing liquid may also be supplied by other liquid supply units. In this case, the shape of the nozzle is not particularly limited, as long as the freezing liquid can be supplied uniformly to the substrate S.

[0039] A cooling section 30 is disposed above platform 21. The cooling section 30 supplies cooled gas to platform 21. The cooling section 30 may be, for example, a gas supply nozzle. The cooled gas cools and solidifies, for example, freezes, the freezing liquid supplied to substrate S. The gas may be, for example, nitrogen, and the gas temperature may be, for example, below the freezing point of the liquid film. The cooling section 30 supplies gas to substrate S while adjusting the gas flow rate and temperature. Alternatively, instead of the cooling section 30, cooling gas may be supplied through a through-hole provided below substrate S, for example, platform 21. In this case, the cooling gas is supplied to the back side of substrate S.

[0040] [Substrate Processing Method] Hereinafter, a substrate processing method using the substrate processing apparatus 1 according to this embodiment will be described. The substrate processing method according to this embodiment is, for example, a method for performing a freeze-cleaning process as follows: supplying a freezing liquid to the surface of a semiconductor substrate, cooling the freezing liquid to form a freeze film, and thawing the freeze film by supplying a thawing liquid, thereby removing particles and the like from the substrate surface. The substrate processing method of this embodiment can, for example, be performed as part of a semiconductor device manufacturing process. Figure 6 This is a diagram that schematically illustrates a substrate processing method according to one embodiment. Figure 6 In order to illustrate the state on the substrate S, the configuration of the substrate processing device 1 is omitted.

[0041] like Figure 1 As shown, the substrate S is first placed on the platform 21 with its main surface horizontal (XY direction). The substrate S is, for example, a semiconductor substrate. The platform 21 holding the substrate S is rotated about a vertical axis including the center C by a rotation mechanism 22.

[0042] To supply the freezing fluid, valve 13 of the liquid supply unit 10 is opened to supply the freezing fluid to the substrate S. The freezing fluid is, for example, deionized water (DIW). The freezing fluid is supplied to the substrate S via filter 14. The shapes of the nozzle 11 and the liquid supply port 112 for supplying the freezing fluid are not particularly limited. Figure 6 As shown in (a), the supplied freezing liquid forms a uniform freezing liquid film L1 on the surface of the substrate S.

[0043] Cooled gas is supplied from the cooling section 30. The gas, for example, is nitrogen, and its temperature is, for example, below the freezing point of the liquid film. Figure 6 As shown in (b), the cooled gas cools the freezing liquid film, forming a uniform freezing film F on the surface of the substrate S. Particles and other adhering substances on the substrate surface are captured in the freezing film F.

[0044] To supply defrosting fluid, valve 13 of the liquid supply unit 10 is opened to supply defrosting fluid to the substrate S. The defrosting fluid is, for example, deionized water (DIW). The defrosting fluid is supplied to the substrate S from nozzle 11 via filter 14. In this embodiment, the defrosting fluid is supplied through both ends of the long side of the liquid supply port 112 (…). Figure 2 The width w1 at position A is greater than the width at the center of the long side ( Figure 2 The width w2 at position A' allows for variation in the amount of defrosting fluid supplied from the liquid supply port 112. This variation occurs from both ends of the long side of the liquid supply port 112. Figure 2 The amount of defrosting fluid supplied from position A is greater than that from the center of the long side of the liquid supply port 112. Figure 2 The amount of defrosting fluid supplied from position A' is preferably from both ends of the long side of the liquid supply port 112. Figure 2 The supply of defrosting fluid sprayed from position A is from the center of the long side of the liquid supply port 112 ( Figure 2 The amount of thawing fluid sprayed from position A' is more than 4 times but less than 5 times the supply.

[0045] The amount of thawing fluid supplied to the outer periphery of the substrate S is greater than the amount supplied to the central portion. As a result, the frozen film F on the surface of the substrate S is thawed from the outer periphery of the substrate S. Figure 6 As shown in (c), the thickness of the frozen film F remaining on the surface of the substrate S is formed with a gentle slope, thicker at the center and thinner at the periphery. If the frozen film F of the substrate S is thawed from the periphery, the deposits trapped in the frozen film F at the periphery of the substrate S are discharged from the substrate S along with the thawing fluid. The supplied thawing fluid forms a thawing fluid film L2 on the frozen film F remaining on the surface of the substrate S. Figure 6 In (c), the thawing liquid film L2 is formed with a thickness that is thinner at the center of the substrate S and thicker at the outer periphery, with a slope opposite to that of the freezing film F. However, it is not limited to this, and the thawing liquid film L2 may not be formed on the freezing film F.

[0046] If the remaining frozen film F in the center of the substrate S is thawed, the deposits trapped in the frozen film F in the center of the substrate S are discharged from the substrate S along with the thawing liquid. Figure 6 As shown in (d), if the frozen film F is completely thawed, the deposits trapped in the frozen film F are discharged from the substrate S along with the thawing liquid.

[0047] If the frozen film F on the surface of the substrate S thaws from the center of the substrate S, the frozen film F remaining on the outer periphery of the substrate S may sometimes hinder the movement of particles or other deposits attached to the center of the substrate S. In the substrate processing method of this embodiment, by thawing the frozen film F on the surface of the substrate S from the outer periphery of the substrate S, particles or other deposits attached to the center of the substrate S can be removed efficiently, thereby improving the freezing and cleaning efficiency of the substrate S.

[0048] <Modification> The substrate processing apparatus described in this modification is identical to that described in the first embodiment, except for the shape of the liquid supply port of the nozzle. The substrate processing method described in this modification is identical to that described in the first embodiment. Descriptions of the parts identical to those in the first embodiment are omitted; instead, descriptions of the parts differing from the configuration of the substrate processing apparatus described in the first embodiment will be provided here.

[0049] [Substrate Processing Apparatus] Figure 7 This is a bottom view that roughly shows the construction of a nozzle involved in a variation. For example... Figure 7 As shown, the nozzle 11a has multiple liquid supply ports 112a. The multiple liquid supply ports 112a are connected to a liquid storage section.

[0050] Multiple liquid supply ports 112a are disposed in the same area as the area (dashed line) where the liquid supply ports 112 are disposed in the first embodiment. That is, the width wa of the long side direction (X direction) of the area where the multiple liquid supply ports 112a are disposed is approximately the same as the diameter of the substrate S. The two ends of the long side of the area where the multiple liquid supply ports 112a are disposed ( Figure 7 The width w1a of the shorter side (Y direction) at position A is greater than that of the center of the longer side. Figure 7 The width w2a in the short side direction (Y direction) at position A'). Multiple liquid supply ports 112a are scattered in the above area (dashed line).

[0051] In this modified example, the plurality of liquid supply ports 112a are circular in shape and have the same size. The number of the plurality of liquid supply ports 112a is equal to the number of the two ends of the long side of the area where the plurality of liquid supply ports 112a are disposed. Figure 7 The number of positions A) is greater than that of the central part of the long side ( Figure 7 The number of positions A'. Preferably, the long sides of the area where the multiple liquid supply ports 112a are arranged ( Figure 7 The number of liquid supply ports 112a at position A) is the central part of the long side ( Figure 7The number of liquid supply ports 112a at position A' is more than twice but less than three times. However, it is not limited to this, and as will be described later, the size (area) of the plurality of liquid supply ports 112a is the area at both ends of the long side of the region where the plurality of liquid supply ports 112a are arranged. Figure 7 The dimension of position A) is larger than the center of the long side ( Figure 7 The size of position A'). In this case, the number of multiple liquid supply ports 112a can also be the central part of the long side of the area where the multiple liquid supply ports 112a are arranged ( Figure 7 Position A') and the two ends of the long side ( Figure 7 The same as position A).

[0052] The liquid supply port 112a involved in this embodiment allows the central portion of its long side ( Figure 7 At position A' and at both ends of the long side ( Figure 7 The number of liquid supply ports 112a at position A is different, thereby enabling control of the liquid supply amount. This is achieved by making the two ends of the long side ( Figure 7 The number of liquid supply ports 112a at position A is greater than that at the center of the long side ( Figure 7 The number of liquid supply ports 112a at position A', so that from both ends of the long side of the liquid supply port 112a ( Figure 2 The amount of liquid supplied from position A is greater than that from the center of the long side of liquid supply port 112a. Figure 2 The amount of liquid supplied from position A' is adjusted. Therefore, the substrate processing apparatus according to this modification is able to supply more liquid to the outer periphery of the substrate S than to the central portion.

[0053] <Second Implementation>

[0054] [Substrate Processing Apparatus] The substrate processing apparatus according to this embodiment is identical in configuration to the substrate processing apparatus according to the first embodiment, except for the nozzle configuration. The substrate processing method according to this embodiment is identical to the substrate processing method according to the first embodiment, except for the temperature of the defreezing liquid. Descriptions of the parts identical to those in the first embodiment are omitted; instead, descriptions of the parts differing from the configuration of the substrate processing apparatus according to the first embodiment will be provided here.

[0055] use Figure 1 , Figures 8 to 11 The composition of nozzle 11b is described in detail. Figure 8 This is a bottom view that schematically illustrates the construction of a nozzle according to one embodiment. Figure 9 It is the long side end of nozzle 11b ( Figure 8 YZ cross-section at location A). Figure 10 It is the central part of the long side of nozzle 11b ( Figure 8YZ cross-sectional view at position A'). Figure 11 It is the central part of the short side of nozzle 11b ( Figure 8 XZ cross-sectional view at position B). In this embodiment, the nozzle 11b includes a liquid storage section 111b, a liquid supply port 112b, and a temperature control mechanism 113b.

[0056] The liquid supply port 112b is configured to have a slit shape with a length approximately the same as the diameter of the substrate S in the X direction extending from the nozzle 11b. That is, the width wb of the long side direction (X direction) of the liquid supply port 112b is approximately the same as the diameter of the substrate S. The width of the short side direction (Y direction) of the liquid supply port 112b is the same throughout the long side direction (X direction). However, this is not a limitation; the width of the short side direction (Y direction) of the liquid supply port 112b may also differ at the end of the long side and the center of the long side, as in the first embodiment.

[0057] The nozzle 11b has a temperature control mechanism 113b adjacent to the liquid supply port 112b. The temperature of the liquid sprayed from the liquid supply port 112b onto the substrate S is controlled by the temperature control mechanism 113b. The temperature control mechanism 113b may include one of a cooler 113b1 and a heater 113b2, or both a cooler 113b1 and a heater 113b2. The two ends of the long side of the liquid supply port 112b ( Figure 8 For example, heater 113b2 is installed at location A). The liquid supply port 112b is located at the center of its long side ( Figure 8 For example, a cooler 113b1 is configured at location A'). Figure 8 In this configuration, the temperature control mechanism 113b is adjacent to the outer side of the liquid supply port 112b, but it can also be disposed inside the liquid supply port 112b. The temperature control mechanism 113b only needs to be able to partially control the temperature of the liquid sprayed from the liquid supply port 112b onto the substrate S. The temperature control mechanism 113b may also include a temperature sensor. The sensor can also be disposed inside the liquid supply port 112b.

[0058] The temperature control mechanism 113b involved in this embodiment can control the temperature from both ends of the long side of the liquid supply port 112b. Figure 8 The temperature of the liquid ejected from position A, and the temperature of the liquid from the center of the long side of the liquid supply port 112b ( Figure 8 The temperature of the liquid ejected from position A'. This is determined by the temperature of the liquid at both ends of the long side of the liquid supply port 112b. Figure 8 Position A) The heater 113b2 is positioned at the center of the long side of the liquid supply port 112b. Figure 8 The cooler 113b1 is configured at position A', thereby allowing the liquid to flow from both ends of the long side of the liquid supply port 112b. Figure 8The temperature of the liquid ejected from position A) is higher than that from the center of the long side of the liquid supply port 112b. Figure 8 The temperature of the liquid ejected from position A' is determined by the temperature of the liquid. Therefore, the substrate processing apparatus according to this embodiment can supply liquid with a temperature higher than that of the central portion to the outer periphery of the substrate S.

[0059] [Substrate Processing Method] The substrate processing method described in this embodiment is the same as that described in the first embodiment, except for the temperature of the thawing liquid. Therefore, here, only the part that is different from the first embodiment in the supply of the thawing liquid will be described.

[0060] In this embodiment, by configuring the two ends of the long side of the liquid supply port 112b ( Figure 8 The heater at position A) and the center of the long side ( Figure 8 The cooler is located at position A', so that the temperature of the thawing fluid sprayed from the liquid supply port 112b can be changed. From both ends of the long side of the liquid supply port 112b ( Figure 8 The temperature of the defrosting fluid sprayed from position A) is higher than that from the center of the long side of the liquid supply port 112b. Figure 8 The temperature of the thawing fluid sprayed from position A'. From both ends of the long side of the liquid supply port 112b ( Figure 8 The temperature of the thawing fluid sprayed from position A can be, for example, above 20°C but below 25°C. From the center of the long side of the liquid supply port 112b ( Figure 8 The temperature of the thawing fluid sprayed from position A' can be, for example, above 3°C but below 5°C. Preferably, it is sprayed from both ends of the long side of the liquid supply port 112b. Figure 8 The temperature of the defrosting fluid sprayed from position A) is the same as that from the center of the long side of the liquid supply port 112b. Figure 8 The temperature difference of the thawing fluid sprayed from position A' is above 15°C and below 20°C.

[0061] In this embodiment, the temperature control mechanism 113b is shown to include both a cooler 113b1 and a heater 113b2. However, it is not limited to this; either the cooler 113b1 or the heater 113b2 may be used depending on the temperature of the defrosting fluid supplied from the flow path 12. When the temperature of the supplied defrosting fluid is, for example, around 10°C, the temperature can be controlled by utilizing both ends of the long side of the liquid supply port 112b (…). Figure 8 The heater at position A) heats the defrost solution, thereby creating a slope in the temperature of the defrost solution sprayed from the liquid supply port 112b. If the temperature of the supplied defrost solution is, for example, around 25°C, this can be achieved by utilizing the central portion of the long side of the liquid supply port 112b (…). Figure 8The cooler at position A' cools the thawing fluid, thereby creating a slope in the temperature of the thawing fluid sprayed from the liquid supply port 112b.

[0062] The temperature of the thawing fluid supplied to the outer periphery of the substrate S is higher than the temperature of the thawing fluid supplied to the central portion. As a result, the frozen film F on the surface of the substrate S is thawed from the outer periphery of the substrate S. Figure 6 As shown in (c), the thickness of the frozen film F remaining on the surface of the substrate S is formed at a gentle slope, being thicker at the center of the substrate S and thinner at the outer periphery. If the frozen film F of the substrate S is thawed from the outer periphery, the deposits trapped in the frozen film F at the outer periphery of the substrate S are discharged from the substrate S along with the thawing liquid. If the frozen film F remaining in the center of the substrate S is thawed, the deposits trapped in the frozen film F at the center of the substrate S are discharged from the substrate S along with the thawing liquid. In the substrate processing method according to this embodiment, by thawing the frozen film F on the surface of the substrate S from the outer periphery of the substrate S, deposits such as particles attached to the center of the substrate S can be removed efficiently, thereby improving the freezing and cleaning efficiency of the substrate S.

[0063] <Third Implementation Method>

[0064] [Substrate Processing Apparatus] The substrate processing apparatus according to this embodiment is configured the same as that according to the first embodiment, except that it has multiple flow paths. The substrate processing method according to this embodiment is the same as that according to the first embodiment, except that it has the temperature of the defreezing liquid. The description of the parts that are the same as those in the first embodiment is omitted, and the parts that are different from the configuration of the substrate processing apparatus according to the first embodiment will be described here.

[0065] use Figure 12 and Figure 13 The composition of the liquid supply unit is described in detail. Figure 12 This is a diagram that schematically illustrates the overall configuration of the liquid supply unit according to one embodiment. Figure 13 This is a bottom view that schematically illustrates the construction of a nozzle according to one embodiment.

[0066] The liquid supply unit 10c includes a nozzle 11c, a flow path 12c, a valve 13c, a filter 14c, a liquid supply device 15c, and a mass flow controller 17c. In this embodiment, the liquid supply unit 10c includes multiple flow paths 12c. Each flow path 12c is connected to a liquid supply device 15c for supplying liquid. The liquid supply device 15c supplies liquids with different timings, supply volumes, and temperatures to each flow path 12c. Between the liquid supply device 15c and the nozzle 11c in each flow path 12c, the mass flow controller 17c, the valve 13c, and the filter 14c are arranged sequentially. The mass flow controller 17c controls the flow rate by changing the flow path resistance. Liquid is supplied from the nozzle 11c to the platform 21 via the filter 14c by opening the valve 13c. Figure 12 The drive mechanism is omitted in the first embodiment, but the liquid supply unit 10c may also have a drive mechanism in the same way as the first embodiment.

[0067] The nozzle 11c has multiple liquid supply ports 112c. Each liquid supply port 112c is connected to a corresponding flow path 12c. Figure 12 The liquid storage section is omitted in this embodiment, but it can also be provided between each flow path 12c and the liquid supply port 112c in the same manner as the first embodiment.

[0068] Multiple liquid supply ports 112c are disposed in the same region as the region where liquid supply ports 112 are disposed according to the first embodiment. That is, the width wc of the long side direction (X direction) of the region where the multiple liquid supply ports 112c are disposed is approximately the same as the diameter of the substrate S. The multiple liquid supply ports 112c are distributed in the above-mentioned region.

[0069] In this embodiment, the dimensions of the plurality of liquid supply ports 112c are different from each other. The central portion of the long side of the area where the plurality of liquid supply ports 112c are disposed ( Figure 13 Compared to the size of the liquid supply port 112c located at position A', the two ends of the long side ( Figure 13 The liquid supply port 112c located at position A) is larger in size. Preferably, the long side ends of the area where the plurality of liquid supply ports 112c are located ( Figure 13 The liquid supply port 112c configured at position A) has a size of the center of the long side ( Figure 13 The size of the liquid supply port 112c disposed at position A') is more than twice but less than four times, more preferably more than twice but less than three times. Here, the size of the liquid supply port 112c refers to the area of ​​the liquid supply port 112c.

[0070] The long sides of the area where the multiple liquid supply ports 112c are arranged ( Figure 13 The diameter w1c of the liquid supply port 112c located at position A) is larger than that of the central part of the long side ( Figure 13 The diameter w2c of the liquid supply port 112c disposed at position A' is preferably at both ends of the long side of the area where the plurality of liquid supply ports 112c are disposed. Figure 13 The diameter w1c of the liquid supply port 112c located at position A is the center of the long side ( Figure 13 The diameter w2c of the liquid supply port 112c disposed at position A' is at least 1.41 times and less than 2 times, more preferably at least 1.41 times and less than 1.73 times. Here, the diameter of the liquid supply port 112c refers to the width of the liquid supply port 112c in the short side direction (Y direction).

[0071] The multiple liquid supply ports 112c are circular in shape, but this is not particularly limited. Figure 13 Examples of multiple liquid supply ports 112c with different sizes are shown, but this is not a limitation. The size of the multiple liquid supply ports 112c is only required to be the size that can stably eject the liquid described later.

[0072] The liquid supply device 15c is equipped with a flow control mechanism, a timing control mechanism, and a temperature control mechanism for supplying liquids with different supply amounts, timings, and temperatures to each flow path 12c.

[0073] The liquid ejected from the liquid supply port 112c onto the substrate S has its flow rate controlled by the flow control mechanism of the liquid supply device 15c. The flow control mechanism can control the flow rate of the area where the multiple liquid supply ports 112c are located, from both ends of the long side ( Figure 13 The flow rate of liquid ejected from the liquid supply port 112c located at position A) and from the center of the long side ( Figure 13 The flow rate of liquid ejected from the liquid supply port 112c located at position A'. This is related to the flow rate of liquid supplied to the center of the long side of the area where the multiple liquid supply ports 112c are located. Figure 13 Compared to the flow rate of liquid supplied to both ends of the long side (position A'), the flow rate of liquid supplied to the liquid supply port 112c located at position A' is higher. Figure 13 The liquid flow rate is greater at the liquid supply port 112c located at position A). Preferably, the liquid supply port 112c is located at the two ends of the long side of the area where multiple liquid supply ports 112c are arranged. Figure 13 The liquid flow rate ejected from the liquid supply port 112c located at position A) is from the center of the long side ( Figure 13 The flow rate of liquid ejected from the liquid supply port 112c located at position A' is more than 15 times that of the central portion. Therefore, the substrate processing apparatus according to this embodiment can supply more liquid to the outer periphery of the substrate S than to the central portion.

[0074] The liquid ejected from the liquid supply port 112c onto the substrate S is timed by a timing control mechanism of the liquid supply device 15c. The timing control mechanism can control the timing of the liquid supplied from both ends of the long side of the area where the multiple liquid supply ports 112c are located. Figure 13 The timing of the liquid ejected from the liquid supply port 112c located at position A) and from the center of the long side ( Figure 13 The timing of the liquid ejected from the liquid supply port 112c located at position A'. This is related to the timing of the liquid supplied to the center of the long side of the area where the multiple liquid supply ports 112c are located. Figure 13 Compared to the timing of the liquid supplied to the liquid supply port 112c located at position A', the liquid is supplied to both ends of the long side. Figure 13 The timing of the liquid supply port 112c located at position A) is earlier. Therefore, the substrate processing apparatus according to this embodiment can supply liquid to the outer periphery of the substrate S faster (earlier) than to the central portion. Preferably, the liquid supply port 112c is located at both ends of the long side in the region where the plurality of liquid supply ports 112c are arranged. Figure 13 When the liquid supply time from the liquid supply port 112c located at position A is 5 seconds, the liquid ejected from the center of the long side ( Figure 13 The liquid supply time from the liquid supply port 112c located at position A' is 1.2 seconds or more and 1.6 seconds or less. Preferably, the liquid is supplied from the center of the long side ( Figure 13 The timing delay of the liquid ejected from the liquid supply port 112c located at position A' is as follows: from both ends of the long side ( Figure 13 The liquid supply time of the liquid ejected from the liquid supply port 112c located at position A) is the same as that from the center of the long side ( Figure 13 The difference in liquid supply time between the liquid supply port 112c positioned at position A') and the liquid supply time between the liquid supply port 112c. Therefore, it is preferable to supply the liquid from the center of the long side ( Figure 13 The timing delay of the liquid ejected from the liquid supply port 112c configured at position A') is greater than 3.4 seconds but less than 3.8 seconds.

[0075] The liquid ejected from the liquid supply port 112c onto the substrate S has its temperature controlled by a temperature control mechanism in the liquid supply device 15c. The temperature control mechanism can control the temperature of the liquid at both ends of the long side of the area where the multiple liquid supply ports 112c are located. Figure 13 The temperature of the liquid ejected from the liquid supply port 112c located at position A) and the temperature of the liquid ejected from the center of the long side ( Figure 13 The temperature of the liquid ejected from the liquid supply port 112c located at position A' is related to the temperature of the liquid supplied to the central part of the long side of the area where the multiple liquid supply ports 112c are located. Figure 13 The temperature of the liquid supplied to the two ends of the long side is higher than that of the liquid supplied at the liquid supply port 112c located at position A'. Figure 13The liquid at the liquid supply port 112c located at position A) has a higher temperature. Preferably, the liquid is supplied to the central portion of the long side of the area where the multiple liquid supply ports 112c are located. Figure 13 The temperature of the liquid supplied to the liquid supply port 112c located at position A' is between 3°C and 5°C. Preferably, the liquid is supplied to both ends of the long side of the area where the multiple liquid supply ports 112c are located. Figure 13 The temperature of the liquid at the liquid supply port 112c located at position A) is above 20°C and below 25°C. Preferably, the liquid is supplied to the center of the long side of the area where the multiple liquid supply ports 112c are located. Figure 13 The temperature of the liquid at the liquid supply port 112c located at position A', and the temperature of the liquid supplied to both ends of the long side ( Figure 13 The temperature difference between the liquid at the liquid supply port 112c located at position A) and the liquid temperature is between 15°C and 20°C. Therefore, the substrate processing apparatus according to this embodiment can supply liquid with a temperature higher than that at the center to the outer periphery of the substrate S.

[0076] [Substrate Processing Method] The substrate processing method described in this embodiment is the same as that described in the first embodiment, except for the flow rate, timing, and temperature of the thawing liquid. Therefore, here, only the part that is different from the first embodiment in the supply of the thawing liquid will be described.

[0077] In this embodiment, the flow rate of the defrosting fluid ejected from the liquid supply port 112c can be varied by the flow control mechanism of the liquid supply device 15c. The flow rate of the defrosting fluid ejected from the liquid supply port 112c is varied from both ends of the long side of the area where the plurality of liquid supply ports 112c are arranged. Figure 13 The flow rate of the defrosting fluid ejected from the liquid supply port 112c located at position A) is greater than that ejected from the center of the long side ( Figure 13 The flow rate of the defrosting fluid ejected from the liquid supply port 112c located at position A').

[0078] In this embodiment, the timing difference of the defrosting fluid ejected from the liquid supply port 112c can be generated by the timing control mechanism of the liquid supply device 15c. This difference occurs at both ends of the long side of the area where the plurality of liquid supply ports 112c are arranged. Figure 13 The timing of the defrosting fluid ejected from the liquid supply port 112c located at position A) is earlier than that from the center of the long side ( Figure 13 The timing of the defrosting fluid sprayed from the liquid supply port 112c located at position A') is determined.

[0079] In this embodiment, the temperature of the defrosting fluid ejected from the liquid supply port 112c can be varied by the temperature control mechanism of the liquid supply device 15c. The temperature of the defrosting fluid ejected from the liquid supply port 112c is varied at both ends of the long side of the area where the plurality of liquid supply ports 112c are arranged. Figure 13The temperature of the defrosting fluid ejected from the liquid supply port 112c located at position A) is higher than that ejected from the center of the long side ( Figure 13 The temperature of the thawing fluid sprayed from the liquid supply port 112c located at position A') is as follows.

[0080] The flow rate of the thawing fluid supplied to the outer periphery of substrate S is greater than the flow rate of the thawing fluid supplied to the central portion. The timing of the thawing fluid supplied to the outer periphery of substrate S is earlier than the timing of the thawing fluid supplied to the central portion. The temperature of the thawing fluid supplied to the outer periphery of substrate S is higher than the temperature of the thawing fluid supplied to the central portion. As a result, the frozen film F on the surface of substrate S is thawed from the outer periphery of substrate S. Figure 6 As shown in (c), the thickness of the frozen film F remaining on the surface of the substrate S is formed at a gentle slope, being thicker at the center of the substrate S and thinner at the outer periphery. If the frozen film F of the substrate S is thawed from the outer periphery, the deposits trapped in the frozen film F at the outer periphery of the substrate S are discharged from the substrate S along with the thawing liquid. If the frozen film F remaining in the center of the substrate S is thawed, the deposits trapped in the frozen film F at the center of the substrate S are discharged from the substrate S along with the thawing liquid. In the substrate processing method according to this embodiment, by thawing the frozen film F on the surface of the substrate S from the outer periphery of the substrate S, deposits such as particles attached to the center of the substrate S can be removed efficiently, thereby improving the freezing and cleaning efficiency of the substrate S.

[0081] [Example]

[0082] use Figure 14 and Figure 15 This illustrates an example of a substrate processing method using the substrate processing apparatus according to the third embodiment. Figure 14 The conditions of a substrate processing method according to one embodiment are shown. Figure 15 This is a diagram illustrating a substrate processing method according to one embodiment.

[0083] Figure 13 The liquid supply ports 112c (a~f) shown are located at the center of the long side ( Figure 13 The distance between positions A', the area ratio of each liquid supply port 112c, the flow rate ratio of the thawing fluid supplied from each liquid supply port 112c, the temperature of the thawing fluid (°C), and the timing delay of the thawing fluid supply (sec) are as follows: Figure 14 As shown. Under the conditions of a platform rotation speed of 300 rpm and a processing time of 5 seconds, the average residual film thickness of the frozen film F when the defreezing fluid is supplied (equivalent to...) Figure 6 (c)) in Figure 15 As shown in the image. Figure 15As shown, the frozen film F on the surface of substrate S is thawed from the outer periphery of substrate S, and the thickness of the remaining frozen film F on the surface of substrate S forms a gentle slope that is thicker at the center of substrate S and thinner at the outer periphery.

[0084] The above describes several embodiments, but these embodiments are merely examples and do not imply limitation of the scope of the invention. The new apparatus and method described in this specification can be implemented in various other ways. Furthermore, various omissions, substitutions, and modifications can be made to the apparatus and method described in this specification without departing from the spirit of the invention. The appended claims and their equivalents are intended to include the scope, spirit, and variations of the invention.

Claims

1. A substrate processing apparatus comprising: The substrate holding section includes a platform that holds the substrate substantially horizontally; a freezing liquid supply section that supplies freezing liquid to the substrate; a cooling section that cools the freezing liquid to form a freezing film; and a nozzle that, when viewed from above, extends in a first direction including the center portion of the platform, with one end in the first direction and the other end opposite to that end located on the outer periphery outside the center portion. The substrate processing apparatus includes a thawing fluid supply unit. The thawing fluid supply unit simultaneously supplies at least one different thawing fluid at different amounts and temperatures to the substrate at the center and the outer periphery to thaw the frozen film. The nozzle has multiple liquid supply ports. The width of the region where the multiple liquid supply ports are arranged in the long side direction is approximately the same as the diameter of the substrate. The width of the region where the multiple liquid supply ports are arranged in the short side direction at both ends of the long side is greater than the width of the region where the long side is located in the short side direction, so that the number of liquid supply ports at both ends of the long side is greater than the number of liquid supply ports at the region where the long side is located, thereby the amount of defrosting fluid supplied is greater at the outer periphery than at the center.

2. The substrate processing apparatus according to claim 1, wherein, The defrosting fluid supply section has a liquid supply port that is opposite to the substrate and extends along the radial direction of the substrate. The width of the liquid supply port, which is orthogonal to the radial direction, is larger at the outer periphery than at the center.

3. The substrate processing apparatus according to claim 1, wherein, The defrosting fluid supply section has multiple liquid supply ports, which are opposite to the substrate and distributed in the radial direction of the substrate. The number of liquid supply ports is greater in the outer periphery than in the center.

4. The substrate processing apparatus according to claim 1, wherein, The defrosting fluid supply section has multiple liquid supply ports, which are opposite to the substrate and distributed in the radial direction of the substrate. The diameter of the multiple liquid supply ports is larger at the outer periphery than at the center.

5. The substrate processing apparatus according to claim 1, wherein, The defrosting fluid supply unit includes: a plurality of liquid supply ports, which are opposite to the substrate and distributed in the radial direction of the substrate; and a flow control mechanism, which is connected to each of the plurality of liquid supply ports.

6. The substrate processing apparatus according to claim 1, wherein, The defrosting fluid supply unit includes: a plurality of liquid supply ports, which are opposite to the substrate and distributed in the radial direction of the substrate; and a timing control mechanism, which is connected to each of the plurality of liquid supply ports.

7. The substrate processing apparatus according to claim 1, wherein, The defrosting fluid supply unit includes a temperature control mechanism that controls the temperature of the defrosting fluid supplied to the substrate.

8. The substrate processing apparatus according to claim 7, wherein, The temperature control mechanism includes a cooler or a heater.

9. The substrate processing apparatus according to claim 1, wherein, The defrosting fluid supply unit includes: a plurality of liquid supply ports, which are opposite to the substrate and distributed in the radial direction of the substrate; and a temperature control mechanism, which is connected to each of the plurality of liquid supply ports.

10. A substrate processing method, comprising: A freezing liquid is supplied to a substrate that is kept approximately horizontal, and the freezing liquid is cooled to form a freezing film. At least one of the following methods, either in terms of supply amount or temperature, is simultaneously supplied to the substrate at different locations at the center and outer periphery, thereby thawing the freezing film. By making the width of the region where the multiple liquid supply ports of the nozzle are arranged in the long direction approximately the same as the diameter of the substrate, and making the width of the region where the multiple liquid supply ports are arranged in the short direction at both ends of the long side greater than the width of the region at the center of the long side, the number of liquid supply ports at both ends of the long side is greater than the number of liquid supply ports at the center of the long side, thereby making the amount of defrosting fluid supplied in the outer periphery greater than that in the center.

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