Anti-counterfeiting element and anti-counterfeiting product

By combining an infrared reflective layer, a magnetic layer, and an optically variable layer, multiple anti-counterfeiting information is provided, solving the problem of single anti-counterfeiting information and improving the anti-counterfeiting effect and performance.

CN116811461BActive Publication Date: 2025-11-28CHINA BANKNOTE PRINTING & MINTING +1
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Patent Information

Application Number
CN202310665391.8
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2023-06-06
Publication Date
2025-11-28
Estimated Expiration
2043-06-06

AI Technical Summary

Technical Problem

Existing anti-counterfeiting products have limited anti-counterfeiting information, are easy to counterfeit, and have poor anti-counterfeiting performance.

Method used

The design employs a combination of an infrared reflective layer, a magnetic layer, and an optically variable layer. The infrared reflective layer transmits electromagnetic waves in the first wavelength range and reflects electromagnetic waves in the second wavelength range. The magnetic layer absorbs electromagnetic waves in the third wavelength range. The optically variable layer has dynamic light-changing characteristics, providing first and second anti-counterfeiting information.

Benefits of technology

This design improves anti-counterfeiting effects, enhances the machine-readable anti-counterfeiting performance of the magnetic pattern, and makes it difficult to counterfeit.

✦ Generated by Eureka AI based on patent content.

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Patent Text Reader

Abstract

The application provides a kind of anti-counterfeiting element and anti-counterfeiting product, wherein the anti-counterfeiting element comprises: at least one infrared reflection layer, the infrared reflection layer has a transmission effect on electromagnetic waves in a first wavelength interval, and the infrared reflection layer has a reflection effect on electromagnetic waves in a second wavelength interval;A magnetic layer is provided on one side of the infrared reflection layer, the magnetic layer has an absorption characteristic for electromagnetic waves in a third wavelength interval, at least part of the first wavelength interval is within the third wavelength interval, the magnetic layer has first anti-counterfeiting information, and the first anti-counterfeiting information is a detectable magnetic signal;An optically variable layer is provided on the magnetic layer, and the optically variable layer has a dynamic optical variable characteristic, and the electromagnetic waves entering the anti-counterfeiting element can obtain second anti-counterfeiting information according to the optically variable layer.
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Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of anti-fake products, in particular to an anti-fake element and an anti-fake product. BACKGROUND

[0002] In the related art, the anti-fake element has magnetic ink to achieve the purpose of anti-fake. However, the anti-fake information of such anti-fake product is relatively single, the anti-fake performance is poor, and it is easy to be imitated by similar products. SUMMARY

[0003] In order to solve or improve at least one of the above technical problems, one purpose of the present application is to provide an anti-fake element.

[0004] Another purpose of the present application is to provide an anti-fake product having the above anti-fake element.

[0005] To achieve the above purpose, the first aspect of the present application provides an anti-fake element, comprising: at least one infrared reflection layer, the infrared reflection layer has a transmission effect on electromagnetic waves in a first wavelength interval, and the infrared reflection layer has a reflection effect on electromagnetic waves in a second wavelength interval; a magnetic layer is arranged on one side of the infrared reflection layer, the magnetic layer has an absorption characteristic for electromagnetic waves in a third wavelength interval, at least part of the first wavelength interval is within the third wavelength interval, the magnetic layer has first anti-fake information, and the first anti-fake information is a detectable magnetic signal; an optically variable layer is arranged on the magnetic layer, the optically variable layer has a dynamic optical variable characteristic, and the electromagnetic waves entering the anti-fake element can obtain second anti-fake information according to the optically variable layer.

[0006] According to the technical scheme of the anti-fake element provided by the present application, the first anti-fake information and the second anti-fake information can be obtained through the anti-fake element, effectively solving the problem of single anti-fake information in the traditional technology, which is conducive to improving the anti-fake effect, and can also improve the machine reading anti-fake performance of the magnetic pattern, especially the magnetic dynamic optical variable pattern. In addition, the color change effect observed when the electromagnetic waves in the first wavelength interval and the electromagnetic waves in the second wavelength interval irradiate the anti-fake element is not consistent, and the color change effect observed when the electromagnetic waves in the second wavelength interval irradiate both sides of the anti-fake element may also be inconsistent (in the case that the anti-fake element is provided with the infrared reflection layer on only one side), which is conducive to further improving the anti-fake effect and is not easy to be imitated by similar products.

[0007] Specifically, the anti-counterfeiting element comprises an infrared reflective layer, a magnetic layer and an optically variable layer. The infrared reflective layer has a transmission effect on electromagnetic waves in a first wavelength interval. Optionally, the infrared reflective layer has a transmittance of no less than 80% for electromagnetic waves in the first wavelength interval. The infrared reflective layer has almost no blocking effect on electromagnetic waves in the first wavelength interval. Optionally, the first wavelength interval is 400-700 nm. The wavelength interval of visible light is 400-700 nm, so the infrared reflective layer has a transmission effect on visible light and almost no blocking effect.

[0008] Further, the infrared reflective layer has a reflection effect on electromagnetic waves in a second wavelength interval. Optionally, the infrared reflective layer has a reflectance of no less than 80% for electromagnetic waves in the second wavelength interval. The infrared reflective layer has a strong blocking effect on electromagnetic waves in the second wavelength interval. Optionally, the second wavelength interval is 800-1500 nm. The wavelength interval of near-infrared waves is 700-1500 nm. When an infrared light source irradiates the infrared reflective layer, the infrared reflective layer has a strong reflection effect on near-infrared waves, i.e. a strong blocking effect on near-infrared waves.

[0009] Further, the number of the infrared reflective layers is at least one. The infrared reflective layer can be one or two. Further, the magnetic layer is arranged on one side of the infrared reflective layer. If the number of the infrared reflective layers is one, the magnetic layer can be arranged on any one of the two sides of the infrared reflective layer; if the number of the infrared reflective layers is two, the magnetic layer is arranged between the two infrared reflective layers. Optionally, the magnetic layer is a layered structure formed by printing or coating an ink containing magnetic pigments.

[0010] Further, the magnetic layer has an absorption characteristic for electromagnetic waves in a third wavelength interval. At least part of the first wavelength interval is within the third wavelength interval. Since the infrared reflective layer has a transmission effect on electromagnetic waves in the first wavelength interval, the electromagnetic waves in the first wavelength interval can pass through the infrared reflective layer and irradiate the magnetic layer. Since at least part of the first wavelength interval is within the third wavelength interval, the magnetic layer has an absorption characteristic for at least part of the electromagnetic waves in the first wavelength interval and within the third wavelength interval. Optionally, the electromagnetic waves in the first wavelength interval are visible light, and at least part of the wavelength interval of the visible light is within the third wavelength interval. The magnetic layer has an absorption characteristic for at least part of the visible light, and the magnetic layer can be observed by the naked eye under visible light.

[0011] Optionally, the infrared reflective layer is prepared on a pet (polyethylene terephthalate) film by evaporation, and the pet film is removable. The infrared reflective layer is arranged on the substrate layer of the anti-counterfeiting product by labeling, hot stamping or copying.

[0012] Optionally, the magnetic layer has a coverage area that is not greater than a coverage area of the infrared reflection layer. The area where the infrared reflection layer is located can completely cover the area where the magnetic layer is located, so as to ensure that when a light source (such as a visible light source or an infrared light source) irradiates at least one side of the anti-counterfeiting element, the light will first irradiate the infrared reflection layer.

[0013] Further, the magnetic layer has first anti-counterfeiting information. The first anti-counterfeiting information is a detectable magnetic signal. The magnetic signal is a soft magnetic signal or a hard magnetic signal. A specific device can detect the magnetic signal of the magnetic layer and determine a magnetic image through the magnetic signal to obtain the first anti-counterfeiting information.

[0014] Further, the optical variable layer is arranged on the magnetic layer. The optical variable layer has a dynamic optical variable feature. The optical variable layer has a color change effect when a reflection observation angle is changed or when transmission and reflection observation is performed. Electromagnetic waves irradiating the anti-counterfeiting element can obtain second anti-counterfeiting information according to the optical variable layer. The second anti-counterfeiting information is the color change effect. The color change effect includes an optical variable pattern and a hidden state of the optical variable pattern.

[0015] Specifically, when electromagnetic waves in the second wavelength range irradiate a side of the anti-counterfeiting element where the infrared reflection layer is arranged, the optical variable pattern is observed in the hidden state, and the hiding function is realized; when electromagnetic waves in the second wavelength range irradiate a side of the anti-counterfeiting element where the infrared reflection layer is not arranged, the optical variable pattern can be observed. Electromagnetic waves in the first wavelength range can irradiate any side of the anti-counterfeiting element, and the optical variable pattern can be observed.

[0016] Optionally, when an infrared light source irradiates a side of the anti-counterfeiting element where the infrared reflection layer is arranged, the optical variable pattern is observed in the hidden state, and the infrared hiding function is realized; when the infrared light source irradiates a side of the anti-counterfeiting element where the infrared reflection layer is not arranged, the optical variable pattern can be observed. A visible light source can irradiate any side of the anti-counterfeiting element, and the optical variable pattern can be observed.

[0017] The anti-counterfeiting element can obtain the first anti-counterfeiting information and the second anti-counterfeiting information, effectively solves the problem of single anti-counterfeiting information in the prior art, is beneficial to improving the anti-counterfeiting effect, and can improve the machine reading anti-counterfeiting performance of the magnetic pattern, in particular, the magnetic dynamic optical variable pattern. In addition, the color change effect observed by the electromagnetic waves in the first wavelength range and the electromagnetic waves in the second wavelength range irradiating the anti-counterfeiting element is not consistent, and the color change effect observed by the electromagnetic waves in the second wavelength range irradiating two sides of the anti-counterfeiting element can also be inconsistent (in the case that only one side of the anti-counterfeiting element is provided with the infrared reflection layer), and this design is beneficial to further improving the anti-counterfeiting effect and is not easy to be imitated by similar products.

[0018] In addition, the above technical solutions provided by the present application can also have the following additional technical features:

[0019] In the technical solution, the magnetic layer and the optically variable layer are in an integrated structure, the magnetic layer and the optically variable layer form an optically variable magnetic layer, and the optically variable magnetic layer has a magnetic signal and a dynamic optical change feature.

[0020] In the technical solution, the optically variable layer and the magnetic layer are in the same layer structure, i.e., the optically variable magnetic layer. Alternatively, the optically variable magnetic layer is formed by printing or coating the ink containing the magnetic optically variable pigment under the action of the directional magnetic field. The optically variable magnetic layer has a magnetic signal. The magnetic signal is a soft magnetic signal or a hard magnetic signal. A specific device can detect the magnetic signal of the magnetic layer and determine a magnetic image through the magnetic signal to obtain first anti-counterfeiting information.

[0021] Further, the optically variable magnetic layer has a dynamic optical change feature. Electromagnetic waves entering the anti-counterfeiting element can obtain second anti-counterfeiting information according to the optically variable magnetic layer. The second anti-counterfeiting information is a color change effect. The color change effect includes an optical change pattern and a hidden state of the optical change pattern.

[0022] Specifically, when the anti-counterfeiting element with the infrared reflection layer is irradiated by the electromagnetic wave in the second wavelength range, the optical change pattern is observed in the hidden state, and the hiding function is realized. When the anti-counterfeiting element without the infrared reflection layer is irradiated by the electromagnetic wave in the second wavelength range, the optical change pattern can be observed. The optical change pattern can be observed on any side of the anti-counterfeiting element irradiated by the electromagnetic wave in the first wavelength range.

[0023] Alternatively, when the anti-counterfeiting element with the infrared reflection layer is irradiated by the infrared light source, the optical change pattern is observed in the hidden state, and the infrared hiding function is realized. When the anti-counterfeiting element without the infrared reflection layer is irradiated by the infrared light source, the optical change pattern can be observed. The optical change pattern can be observed on any side of the anti-counterfeiting element irradiated by the visible light source.

[0024] In the technical solution, the optically variable magnetic layer is a layered structure formed by printing or coating the ink containing the magnetic optically variable pigment under the action of the directional magnetic field.

[0025] In the technical solution, the advantages of this design are as follows. First, the optically variable layer and the magnetic layer are in the same layer structure, which is beneficial to reducing the thickness of the anti-counterfeiting element compared with the design in which the optically variable layer and the magnetic layer are in different layer structures. Second, the preparation method is simple, which is beneficial to mass production.

[0026] In the technical solution, the number of the infrared reflection layers is one, the side of the anti-counterfeiting element with the infrared reflection layer has an infrared reflection feature, and the other side of the anti-counterfeiting element has an infrared absorption feature.

[0027] In the technical solution, the number of the infrared reflection layers is one, so that one side of the anti-counterfeiting element is provided with the infrared reflection layer, and the other side is not provided with the infrared reflection layer. When the infrared light source irradiates the infrared reflection layer, the infrared reflection layer has a strong reflection effect on the infrared light, so that the side of the anti-counterfeiting element provided with the infrared reflection layer has the infrared reflection characteristic. The other side of the anti-counterfeiting element has the infrared absorption characteristic. Optionally, when the infrared light source irradiates the side of the anti-counterfeiting element provided with the infrared reflection layer, the optically variable pattern is observed to be in a hidden state; when the infrared light source irradiates the side of the anti-counterfeiting element not provided with the infrared reflection layer, the optically variable pattern can be observed.

[0028] In the above technical solution, the magnetic layer is arranged between the infrared reflection layer and the optically variable layer.

[0029] In the technical solution, the infrared reflection layer is arranged on one side of the magnetic layer, and the optically variable layer is arranged on the other side of the magnetic layer. When the electromagnetic wave of the second wavelength interval irradiates the side of the anti-counterfeiting element provided with the infrared reflection layer, the magnetic optically variable pattern is observed to be in a hidden state; when the electromagnetic wave of the second wavelength interval irradiates the side of the anti-counterfeiting element not provided with the infrared reflection layer, the magnetic optically variable pattern can be observed.

[0030] In the above technical solution, the number of the infrared reflection layers is two, the magnetic layer and the optically variable layer are arranged between the two infrared reflection layers, and each of the two sides of the anti-counterfeiting element has the infrared reflection characteristic.

[0031] In the technical solution, the number of the infrared reflection layers is two, and the magnetic layer and the optically variable layer are arranged between the two infrared reflection layers, so that both sides of the anti-counterfeiting element are provided with the infrared reflection layer. When the infrared light source irradiates the infrared reflection layer, the infrared reflection layer has a strong reflection effect on the infrared light, so that the side of the anti-counterfeiting element provided with the infrared reflection layer has the infrared reflection characteristic. The infrared light source irradiates any side of the anti-counterfeiting element, and the magnetic optically variable pattern is observed to be in a hidden state.

[0032] In the above technical solution, the coverage area of the magnetic layer is not greater than the coverage area of the infrared reflection layer.

[0033] In the technical solution, the area where the infrared reflection layer is located can completely cover the area where the magnetic layer is located, so as to ensure that the light irradiating at least one side of the anti-counterfeiting element will first irradiate the infrared reflection layer.

[0034] In the above technical solution, the transmittance of the infrared reflection layer to the electromagnetic wave of the first wavelength interval is not less than 80%; and / or the reflectivity of the infrared reflection layer to the electromagnetic wave of the second wavelength interval is not less than 80%.

[0035] In the technical solution, the infrared reflection layer has a transmittance of greater than or equal to 80% for electromagnetic waves in the first wavelength range, and has a transmittance effect for electromagnetic waves in the first wavelength range, and almost no shielding effect.

[0036] Optionally, the infrared reflection layer has a reflectivity of greater than or equal to 80% for electromagnetic waves in the second wavelength range, and has a reflection effect for electromagnetic waves in the second wavelength range, that is, the infrared reflection layer has a strong shielding effect for electromagnetic waves in the second wavelength range.

[0037] In the above technical solution, the first wavelength range is 400nm to 700nm; and / or the second wavelength range is 800nm to 1500nm; and / or the third wavelength range is 400nm to 1500nm.

[0038] In the technical solution, by setting the first wavelength range to 400nm to 700nm, the infrared reflection layer has a transmittance effect for electromagnetic waves with a wavelength of 400nm to 700nm. The wavelength range of visible light is 400nm to 700nm, so the infrared reflection layer has a transmittance effect for visible light and almost no shielding effect. Visible light source can be used to observe the optically variable pattern from any side of the anti-counterfeiting element.

[0039] By setting the second wavelength range to 800nm to 1500nm, the infrared reflection layer has a reflection effect for electromagnetic waves with a wavelength of 800nm to 1500nm. The wavelength range of near-infrared waves is 700nm to 1500nm. When the infrared light source irradiates the infrared reflection layer, the infrared reflection layer has a strong reflection effect for near-infrared waves, that is, the infrared reflection layer has a strong shielding effect for near-infrared waves. When the infrared light source irradiates the side of the anti-counterfeiting element provided with the infrared reflection layer, the observed optically variable pattern is in a hidden state, realizing the infrared hiding function; when the infrared light source irradiates the side of the anti-counterfeiting element not provided with the infrared reflection layer, the optically variable pattern can be observed.

[0040] By setting the third wavelength range to 400nm to 1500nm, the magnetic layer has a strong absorption characteristic for electromagnetic waves with a wavelength of 400nm to 1500nm, and the magnetic layer can be observed by the naked eye under visible light (the magnetic layer does not have a hiding function under visible light), and the magnetic layer does not have a hiding function under infrared light, so the magnetic optically variable pattern also does not have an infrared hiding function.

[0041] In the above technical solution, the infrared reflection layer is a layered structure formed by the first dielectric layer and the second dielectric layer overlapping each other, and the refractive index of the first dielectric layer is greater than the refractive index of the second dielectric layer.

[0042] In the technical solution, the infrared reflection layer is formed by periodically repeating and overlapping the first dielectric layer with high refractive index and the second dielectric layer with low refractive index. It is worth noting that the number of the first dielectric layer is at least one, i.e., the first dielectric layer can be one, two or more; and the number of the second dielectric layer is at least one, i.e., the second dielectric layer can be one, two or more. The first dielectric layer and the second dielectric layer can be flexibly set according to actual requirements.

[0043] In the above technical solution, the thickness of the infrared reflection layer is not greater than 200 nm.

[0044] In the technical solution, the thickness of the infrared reflection layer is less than or equal to 200 nm. By controlling the thickness of the infrared reflection layer, the overall thickness of the anti-fake element can be ensured not to be too large.

[0045] The second aspect of the present application provides an anti-fake product, comprising: a substrate layer; and the anti-fake element in any of the above technical solutions, which is arranged on the substrate layer.

[0046] According to the technical solution of the anti-fake product of the present application, the anti-fake product comprises a substrate layer and the anti-fake element in any of the above technical solutions, and the anti-fake element is arranged on the substrate layer. The magnetic layer of the anti-fake element has first anti-fake information. The first anti-fake information is a detectable magnetic signal. The magnetic signal is a soft magnetic signal or a hard magnetic signal. A specific device can detect the magnetic signal of the magnetic layer and determine a magnetic image through the magnetic signal to obtain the first anti-fake information. Further, the optical variable layer of the anti-fake element has a dynamic optical variable feature. The optical variable layer has a color change effect when the reflection observation angle is changed or when the transmission and reflection observation is performed. Electromagnetic waves irradiated to the anti-fake element can obtain second anti-fake information according to the optical variable layer. The second anti-fake information is the color change effect. The color change effect includes an optical variable pattern and a hidden state of the optical variable pattern. Specifically, when the electromagnetic waves in the second wavelength range are irradiated to the side of the anti-fake element provided with the infrared reflection layer, the observed optical variable pattern is in the hidden state, realizing the hiding function; when the electromagnetic waves in the second wavelength range are irradiated to the side of the anti-fake element not provided with the infrared reflection layer, the optical variable pattern can be observed. The optical variable pattern can be observed on any side of the anti-fake element irradiated by the electromagnetic waves in the first wavelength range.

[0047] Optionally, when the infrared light source irradiates the side of the anti-fake element provided with the infrared reflection layer, the observed optical variable pattern is in the hidden state, realizing the infrared hiding function; when the infrared light source irradiates the side of the anti-fake element not provided with the infrared reflection layer, the optical variable pattern can be observed. The optical variable pattern can be observed on any side of the anti-fake element irradiated by the visible light source.

[0048] It is worth mentioning that the material of the substrate layer is paper; or the material of the substrate layer is bopp (biaxially oriented polypropylene film); or the material of the substrate layer is pet (polyethylene terephthalate); or the material of the substrate layer is paper-plastic composite. Alternatively, the substrate layer is a pet film.

[0049] Wherein, since the anti-fake product comprises any anti-fake element in the first aspect, it has the beneficial effects of any of the above technical solutions, which will not be repeated here.

[0050] In the above technical solution, the infrared reflection layer of the anti-fake element is provided on the substrate layer by means of labeling, hot stamping or copying; the optically variable magnetic layer of the anti-fake element is provided on the substrate layer by printing; or the magnetic layer of the anti-fake element is provided on the substrate layer by means of labeling, hot stamping or copying; the optically variable layer of the anti-fake element is provided on the substrate layer by means of labeling, hot stamping or copying.

[0051] In this technical solution, when the magnetic layer and the optically variable layer are the same layer structure (optically variable magnetic layer), the optically variable magnetic layer is provided on the substrate layer by printing. When the magnetic layer and the optically variable layer are a split structure, the magnetic layer and the optically variable layer are provided on the substrate layer by means of labeling, hot stamping or copying, like the infrared reflection layer.

[0052] In the above technical solution, the substrate layer has a transparent region, and at least part of the anti-fake element is provided in the transparent region.

[0053] In this technical solution, at least part of the anti-fake element is provided in the transparent region of the substrate layer. When the second wavelength interval of electromagnetic waves is irradiated to the side of the anti-fake element provided with the infrared reflection layer, the optically variable pattern is observed in a hidden state, realizing the hiding function; when the second wavelength interval of electromagnetic waves is irradiated to the side of the anti-fake element not provided with the infrared reflection layer, the optically variable pattern can be observed. The first wavelength interval of electromagnetic waves can be irradiated to any side of the anti-fake element to observe the optically variable pattern. It is worth mentioning that the number of transparent regions is at least one, that is, the transparent region can be one, two or more, and the transparent region can be flexibly set according to actual needs.

[0054] In the above technical solution, the magnetic layer of the anti-fake element is provided on one side of the substrate layer, and at least one infrared reflection layer of the anti-fake element is provided on the other side of the substrate layer.

[0055] In this technical solution, at least one infrared reflection layer and the magnetic layer are provided on opposite sides of the substrate layer. When the number of infrared reflection layers is one, the order of each layer structure is infrared reflection layer, substrate layer and magnetic layer, or the order of each layer structure is magnetic layer, substrate layer and infrared reflection layer; when the number of infrared reflection layers is two, the order of each layer structure is infrared reflection layer, substrate layer, magnetic layer and infrared reflection layer.

[0056] Additional aspects and advantages of the technical solutions of the present invention will become apparent in the following description or may be learned by practice of the invention. Attached Figure Description

[0057] Figure 1 A first schematic diagram of an anti-counterfeiting element according to an embodiment of the present invention is shown;

[0058] Figure 2 A second schematic diagram of an anti-counterfeiting element according to an embodiment of the present invention is shown;

[0059] Figure 3 A third schematic diagram of an anti-counterfeiting element according to an embodiment of the present invention is shown;

[0060] Figure 4 A fourth schematic diagram of an anti-counterfeiting element according to an embodiment of the present invention is shown;

[0061] Figure 5 A first schematic diagram of an anti-counterfeiting product according to an embodiment of the present invention is shown;

[0062] Figure 6 A second schematic diagram of an anti-counterfeiting product according to an embodiment of the present invention is shown;

[0063] Figure 7 A third schematic diagram of an anti-counterfeiting product according to an embodiment of the present invention is shown;

[0064] Figure 8 A fourth schematic diagram of an anti-counterfeiting product according to an embodiment of the present invention is shown;

[0065] Figure 9 A fifth schematic diagram of an anti-counterfeiting product according to an embodiment of the present invention is shown;

[0066] Figure 10 A sixth schematic diagram of an anti-counterfeiting product according to an embodiment of the present invention is shown;

[0067] Figure 11 A seventh schematic diagram of an anti-counterfeiting product according to an embodiment of the present invention is shown;

[0068] Figure 12 An eighth schematic diagram of an anti-counterfeiting product according to an embodiment of the present invention is shown.

[0069] in, Figures 1 to 12 The correspondence between the reference numerals and component names in the attached drawings is as follows:

[0070] 100: security element; 110: infrared reflective layer; 120: magnetic layer; 130: optically variable layer; 140: optically variable magnetic layer; 200: security product; 210: substrate layer; 211: transparent area. DETAILED DESCRIPTION

[0071] In order to more clearly understand the above-mentioned purposes, features and advantages of the embodiments of the present application, the embodiments of the present application are further described in detail below with reference to the accompanying drawings and specific embodiments. It should be noted that the embodiments of the present application and the features in the embodiments can be combined with each other without conflict.

[0072] In the following description, a large number of specific details are set forth in order to facilitate a thorough understanding of the present application, but the embodiments of the present application can also be implemented in other ways different from those described herein, and therefore the scope of protection of the present application is not limited to the specific embodiments disclosed below.

[0073] Reference is made below to Figures 1 to 12 The security element 100 and the security product 200 provided according to some embodiments of the present application are described.

[0074] In an embodiment according to the present application, as shown in Figure 1 and Figure 2 The security element 100 includes an infrared reflective layer 110, a magnetic layer 120 and an optically variable layer 130. The infrared reflective layer 110 has a transmission effect on electromagnetic waves in a first wavelength interval. Optionally, the infrared reflective layer 110 has a transmittance of not less than 80% on electromagnetic waves in the first wavelength interval. The infrared reflective layer 110 has almost no blocking effect on electromagnetic waves in the first wavelength interval. Optionally, the first wavelength interval is 400nm to 700nm. The wavelength interval of visible light is 400nm to 700nm, and therefore the infrared reflective layer 110 has a transmission effect on visible light and almost no blocking effect.

[0075] Further, the infrared reflective layer 110 has a reflection effect on electromagnetic waves in a second wavelength interval. Optionally, the infrared reflective layer 110 has a reflectance of not less than 80% on electromagnetic waves in the second wavelength interval. The infrared reflective layer 110 has a strong blocking effect on electromagnetic waves in the second wavelength interval. Optionally, the second wavelength interval is 800nm to 1500nm. The wavelength interval of near-infrared waveband is 700nm to 1500nm. When the infrared light source irradiates the infrared reflective layer 110, the infrared reflective layer 110 has a strong reflection effect on the near-infrared waveband, i.e. the infrared reflective layer 110 has a strong blocking effect on the near-infrared waveband.

[0076] Further, the number of the infrared reflection layer 110 is at least one. The infrared reflection layer 110 can be one or two. Further, the magnetic layer 120 is arranged on one side of the infrared reflection layer 110. If the number of the infrared reflection layer 110 is one, the magnetic layer 120 can be arranged on either side of the infrared reflection layer 110; if the number of the infrared reflection layer 110 is two, the magnetic layer 120 is arranged between the two infrared reflection layers 110. Optionally, the magnetic layer 120 is a layered structure formed by printing or coating with ink containing magnetic pigments.

[0077] Further, the magnetic layer 120 has absorption characteristics for electromagnetic waves in a third wavelength range. At least part of the first wavelength range is within the third wavelength range. Since the infrared reflection layer 110 has a transmission effect for electromagnetic waves in the first wavelength range, electromagnetic waves in the first wavelength range can transmit through the infrared reflection layer 110 and hit the magnetic layer 120. Since at least part of the first wavelength range is within the third wavelength range, the magnetic layer 120 has absorption characteristics for at least part of the first wavelength range and within the third wavelength range. Optionally, the electromagnetic waves in the first wavelength range are visible light, and at least part of the wavelength range (wavelength range) of the visible light is within the third wavelength range. The magnetic layer 120 has absorption characteristics for at least part of the visible light, and the naked eye can observe the magnetic layer 120 under visible light.

[0078] Optionally, the infrared reflection layer 110 is prepared on a pet (polyethylene terephthalate) film by evaporation, and the pet film can be removed. The infrared reflection layer 110 is arranged on the substrate layer 210 of the anti-counterfeiting product 200 by labeling, hot stamping or copying.

[0079] Optionally, the coverage area of the magnetic layer 120 is not greater than the coverage area of the infrared reflection layer 110. The area where the infrared reflection layer 110 is located can completely cover the area where the magnetic layer 120 is located, to ensure that when a light source (such as a visible light source or an infrared light source) illuminates at least one side of the anti-counterfeiting element 100, the light will first hit the infrared reflection layer 110.

[0080] Further, the magnetic layer 120 has first anti-counterfeiting information. The first anti-counterfeiting information is a detectable magnetic signal. The magnetic signal is a soft magnetic signal or a hard magnetic signal. A specific device can detect the magnetic signal of the magnetic layer 120 and determine a magnetic image through the magnetic signal to obtain the first anti-counterfeiting information.

[0081] Further, the optical variable layer 130 is arranged on the magnetic layer 120. The optical variable layer 130 has a dynamic optical variable feature. The optical variable layer 130 has a color change effect when the reflection observation angle is changed or when the transmission and reflection observation is performed. The electromagnetic wave irradiation on the anti-counterfeiting element 100 can obtain the second anti-counterfeiting information according to the optical variable layer 130. The second anti-counterfeiting information is the color change effect. The color change effect includes the optical variable pattern and the hidden state of the optical variable pattern.

[0082] Specifically, when the second wavelength interval electromagnetic wave irradiates the anti-counterfeiting element 100 on the side provided with the infrared reflection layer 110, the optical variable pattern is observed in the hidden state, realizing the hidden function; when the second wavelength interval electromagnetic wave irradiates the anti-counterfeiting element 100 on the side not provided with the infrared reflection layer 110, the optical variable pattern can be observed. The optical variable pattern can be observed on any side of the anti-counterfeiting element 100 irradiated by the first wavelength interval electromagnetic wave.

[0083] Alternatively, when the infrared light source irradiates the anti-counterfeiting element 100 on the side provided with the infrared reflection layer 110, the optical variable pattern is observed in the hidden state, realizing the infrared hidden function; when the infrared light source irradiates the anti-counterfeiting element 100 on the side not provided with the infrared reflection layer 110, the optical variable pattern can be observed. The optical variable pattern can be observed on any side of the anti-counterfeiting element 100 irradiated by the visible light source.

[0084] By the anti-counterfeiting element 100 of the present application, the first anti-counterfeiting information and the second anti-counterfeiting information can be obtained, effectively solving the problem of single anti-counterfeiting information in the prior art, which is conducive to improving the anti-counterfeiting effect and can also improve the machine reading anti-counterfeiting performance of the magnetic pattern, especially the magnetic dynamic optical variable pattern. In addition, the color change effects observed by the first wavelength interval electromagnetic wave and the second wavelength interval electromagnetic wave irradiating the anti-counterfeiting element 100 are not consistent, and the color change effects observed on the two sides of the anti-counterfeiting element 100 irradiated by the second wavelength interval electromagnetic wave may also be inconsistent (when the anti-counterfeiting element 100 is provided with the infrared reflection layer 110 on only one side), which is conducive to further improving the anti-counterfeiting effect and is not easy to be imitated by similar products.

[0085] In an embodiment according to the present application, as shown in Figure 3 and Figure 4 , the magnetic layer 120 and the optical variable layer 130 are of an integrated structure, and the magnetic layer 120 and the optical variable layer 130 form an optical variable magnetic layer 140. The optical variable layer 130 and the magnetic layer 120 are of the same layer structure, i.e., the optical variable magnetic layer 140. Alternatively, the optical variable magnetic layer 140 is made of ink containing magnetic optical variable pigments and is made by printing or coating under the action of a directional magnetic field. The optical variable magnetic layer 140 has a magnetic signal. The magnetic signal is a soft magnetic signal or a hard magnetic signal. A specific device can detect the magnetic signal of the magnetic layer 120 and determine the magnetic image through the magnetic signal to obtain the first anti-counterfeiting information.

[0086] Further, the optically variable magnetic layer 140 has a dynamic optical variable feature. Electromagnetic wave irradiation to the security element 100 can obtain second security information according to the optically variable magnetic layer 140. The second security information is a color change effect. The color change effect includes an optical variable pattern and a hidden state of the optical variable pattern.

[0087] Specifically, when the second wavelength range of electromagnetic wave irradiates the security element 100 on the side provided with the infrared reflective layer 110, the optical variable pattern is observed in a hidden state, realizing a hidden function; when the second wavelength range of electromagnetic wave irradiates the security element 100 on the side not provided with the infrared reflective layer 110, the optical variable pattern can be observed. The optical variable pattern can be observed on any side of the security element 100 irradiated by the first wavelength range of electromagnetic wave.

[0088] Alternatively, when the infrared light source irradiates the security element 100 on the side provided with the infrared reflective layer 110, the optical variable pattern is observed in a hidden state, realizing an infrared hidden function; when the infrared light source irradiates the security element 100 on the side not provided with the infrared reflective layer 110, the optical variable pattern can be observed. The optical variable pattern can be observed on any side of the security element 100 irradiated by the visible light source.

[0089] Further, the optically variable magnetic layer 140 is a layered structure formed by printing or coating the ink containing magnetic optical variable pigments under the action of a directional magnetic field. The advantages of this design are: first, it ensures that the optically variable layer 130 and the magnetic layer 120 are the same layer structure, which is beneficial to reduce the thickness of the security element 100 compared with the design that the optically variable layer 130 and the magnetic layer 120 are different layer structures; second, the preparation method is simple, which is beneficial to mass production.

[0090] In an embodiment according to the present application, as shown in Figure 1 and Figure 3 The number of the infrared reflective layer 110 is one. The side of the security element 100 provided with the infrared reflective layer 110 has an infrared reflective feature, and the other side of the security element 100 has an infrared absorption feature.

[0091] By setting the number of infrared reflective layers 110 to one, one side of the anti-counterfeiting element 100 is the side with the infrared reflective layer 110, and the other side is the side without the infrared reflective layer 110. When an infrared light source illuminates the infrared reflective layer 110, the infrared reflective layer 110 has a strong reflective effect on infrared light, so the side of the anti-counterfeiting element 100 with the infrared reflective layer 110 has infrared reflection characteristics. The other side of the anti-counterfeiting element 100 has infrared absorption characteristics. Optionally, when an infrared light source illuminates the side of the anti-counterfeiting element 100 with the infrared reflective layer 110, the light-changing pattern is observed to be hidden; when an infrared light source illuminates the side of the anti-counterfeiting element 100 without the infrared reflective layer 110, the light-changing pattern can be observed.

[0092] Furthermore, a magnetic layer 120 is disposed between the infrared reflective layer 110 and the optically variable layer 130. The infrared reflective layer 110 is disposed on one side of the magnetic layer 120, and the optically variable layer 130 is disposed on the other side of the magnetic layer 120. When the side of the anti-counterfeiting element 100 with the infrared reflective layer 110 is irradiated by electromagnetic waves in the second wavelength range, the magnetic optically variable pattern is observed to be hidden; when the side of the anti-counterfeiting element 100 without the infrared reflective layer 110 is irradiated by electromagnetic waves in the second wavelength range, the magnetic optically variable pattern can be observed.

[0093] In another embodiment, such as Figure 2 and Figure 4 As shown, there are two infrared reflective layers 110, with a magnetic layer 120 and an optically variable layer 130 disposed between the two infrared reflective layers 110. Each side of the anti-counterfeiting element 100 has infrared reflective features. Both sides of the anti-counterfeiting element 100 are provided with infrared reflective layers 110. When an infrared light source illuminates the infrared reflective layer 110, the infrared reflective layer 110 has a strong reflective effect on infrared light; therefore, the side of the anti-counterfeiting element 100 with the infrared reflective layer 110 has infrared reflective features. When an infrared light source illuminates either side of the anti-counterfeiting element 100, the magnetic optically variable pattern will be observed to be hidden.

[0094] In one embodiment of the present invention, the coverage area of ​​the magnetic layer 120 is no greater than the coverage area of ​​the infrared reflective layer 110. The area where the infrared reflective layer 110 is located can completely cover the area where the magnetic layer 120 is located, so as to ensure that when a light source (such as a visible light source or an infrared light source) illuminates at least one side of the anti-counterfeiting element 100, the light will first be directed to the infrared reflective layer 110.

[0095] In one embodiment of the present invention, the infrared reflective layer 110 has a transmittance of not less than 80% for electromagnetic waves in the first wavelength range. The infrared reflective layer 110 has a transmittance of greater than or equal to 80% for electromagnetic waves in the first wavelength range, and thus exhibits a transmission effect with almost no blocking effect.

[0096] In another embodiment, the infrared reflection layer 110 has a reflectivity of no less than 80% for electromagnetic waves in the second wavelength range. The infrared reflection layer 110 has a reflectivity of greater than or equal to 80% for electromagnetic waves in the second wavelength range, and the infrared reflection layer 110 has a reflection effect for electromagnetic waves in the second wavelength range, i.e., the infrared reflection layer 110 has a strong shielding effect for electromagnetic waves in the second wavelength range.

[0097] In an embodiment according to the present application, the first wavelength range is 400 nm to 700 nm. By setting the first wavelength range to 400 nm to 700 nm, the infrared reflection layer 110 has a transmission effect for electromagnetic waves with a wavelength of 400 nm to 700 nm. The wavelength range of visible light is 400 nm to 700 nm, and therefore the infrared reflection layer 110 has a transmission effect for visible light and almost no shielding effect. The light variable pattern can be observed from any side of the anti-counterfeiting element 100 irradiated by a visible light source.

[0098] In another embodiment, the second wavelength range is 800 nm to 1500 nm. By setting the second wavelength range to 800 nm to 1500 nm, the infrared reflection layer 110 has a reflection effect for electromagnetic waves with a wavelength of 800 nm to 1500 nm. The wavelength range of the near-infrared waveband is 700 nm to 1500 nm. When an infrared light source irradiates the infrared reflection layer 110, the infrared reflection layer 110 has a strong reflection effect for the near-infrared waveband, i.e., the infrared reflection layer 110 has a strong shielding effect for the near-infrared waveband. When an infrared light source irradiates the side of the anti-counterfeiting element 100 provided with the infrared reflection layer 110, the observed light variable pattern is in a hidden state, realizing an infrared hiding function; when an infrared light source irradiates the side of the anti-counterfeiting element 100 not provided with the infrared reflection layer 110, the light variable pattern can be observed.

[0099] In another embodiment, the third wavelength range is 400 nm to 1500 nm. By setting the third wavelength range to 400 nm to 1500 nm, the magnetic layer 120 has a strong absorption characteristic for electromagnetic waves with a wavelength of 400 nm to 1500 nm, and the magnetic layer 120 can be observed by the naked eye under visible light (the magnetic layer 120 does not have a hiding function under visible light) and does not have a hiding function under infrared light, so that the magnetic light variable pattern also does not have an infrared hiding function.

[0100] In another embodiment, the third wavelength interval is 450nm to 1200nm. By setting the third wavelength interval to 450nm to 1200nm, the magnetic layer 120 has an absorption characteristic for electromagnetic waves with a wavelength of 450nm to 1200nm. The electromagnetic waves of the first wavelength interval are visible light, and at least part of the wavelength band (wavelength interval) of the visible light is within the third wavelength interval. The magnetic layer 120 has an absorption characteristic for at least part of the visible light, and the magnetic layer 120 can be observed by the naked eye under visible light.

[0101] Optionally, the third wavelength interval is 500nm to 1000nm.

[0102] In one embodiment according to the present application, the infrared reflection layer 110 is a layered structure formed by the first dielectric layer and the second dielectric layer being overlapped with each other, and the refractive index of the first dielectric layer is greater than the refractive index of the second dielectric layer. The infrared reflection layer 110 is formed by the first dielectric layer with a high refractive index and the second dielectric layer with a low refractive index being periodically and repeatedly overlapped. It is worth mentioning that the number of the first dielectric layer is at least one, i.e., the first dielectric layer can be one, two or more; and the number of the second dielectric layer is at least one, i.e., the second dielectric layer can be one, two or more. The first dielectric layer and the second dielectric layer can be flexibly set according to actual requirements.

[0103] In another embodiment, the thickness of the infrared reflection layer 110 is not greater than 200nm, i.e., the thickness of the infrared reflection layer 110 is less than or equal to 200nm. By controlling the thickness of the infrared reflection layer 110, it can be ensured that the overall thickness of the anti-counterfeiting element 100 will not be too large.

[0104] In one embodiment according to the present application, as Figure 5 , Figure 6 , Figure 7 , Figure 8 , Figure 9 , Figure 10 , Figure 11 and Figure 12As shown, the anti-counterfeiting product 200 comprises a substrate layer 210 and the anti-counterfeiting element 100 in any of the above embodiments, and the anti-counterfeiting element 100 is arranged on the substrate layer 210. The magnetic layer 120 of the anti-counterfeiting element 100 has first anti-counterfeiting information. The first anti-counterfeiting information is a detectable magnetic signal. The magnetic signal is a soft magnetic signal or a hard magnetic signal. A specific device can detect the magnetic signal of the magnetic layer 120 and determine a magnetic image through the magnetic signal to obtain the first anti-counterfeiting information. Further, the optically variable layer 130 of the anti-counterfeiting element 100 has a dynamic optical variable feature. The optically variable layer 130 has a color change effect when the reflection observation angle is changed or when the transmission and reflection observation is performed. Electromagnetic waves irradiated to the anti-counterfeiting element 100 can obtain second anti-counterfeiting information according to the optically variable layer 130. The second anti-counterfeiting information is the color change effect. The color change effect includes an optical variable pattern and a hidden state of the optical variable pattern. Specifically, when the electromagnetic waves of the second wavelength interval irradiate the side of the anti-counterfeiting element 100 provided with the infrared reflection layer 110, the optical variable pattern is observed in the hidden state, and the hiding function is realized; when the electromagnetic waves of the second wavelength interval irradiate the side of the anti-counterfeiting element 100 not provided with the infrared reflection layer 110, the optical variable pattern can be observed. The electromagnetic waves of the first wavelength interval irradiate any side of the anti-counterfeiting element 100, and the optical variable pattern can be observed.

[0105] Optionally, when the infrared light source irradiates the side of the anti-counterfeiting element 100 provided with the infrared reflection layer 110, the optical variable pattern is observed in the hidden state, and the infrared hiding function is realized; when the infrared light source irradiates the side of the anti-counterfeiting element 100 not provided with the infrared reflection layer 110, the optical variable pattern can be observed. The visible light source irradiates any side of the anti-counterfeiting element 100, and the optical variable pattern can be observed.

[0106] It is worth noting that the material of the substrate layer 210 is paper; or the material of the substrate layer 210 is bopp (biaxially oriented polypropylene film); or the material of the substrate layer 210 is pet (polyethylene terephthalate); or the material of the substrate layer 210 is paper-plastic composite. Optionally, the substrate layer 210 is a pet film.

[0107] Further, as Figure 9 , Figure 10 and Figure 11As shown, the infrared reflective layer 110 of the security element 100 is provided on the substrate layer 210 by means of labeling, hot stamping or transfer printing; the optically variable magnetic layer 140 of the security element 100 is provided on the substrate layer 210 by means of printing; or the magnetic layer 120 of the security element 100 is provided on the substrate layer 210 by means of labeling, hot stamping or transfer printing; the optically variable layer 130 of the security element 100 is provided on the substrate layer 210 by means of labeling, hot stamping or transfer printing. When the magnetic layer 120 and the optically variable layer 130 are the same layer structure (optically variable magnetic layer 140), the optically variable magnetic layer 140 is provided on the substrate layer 210 by means of printing. When the magnetic layer 120 and the optically variable layer 130 are separate structures, the magnetic layer 120 and the optically variable layer 130 are provided on the substrate layer 210 by means of labeling, hot stamping or transfer printing, like the infrared reflective layer 110.

[0108] In one embodiment according to the present application, as shown in Figure 12 As shown, the substrate layer 210 has a transparent region 211, and at least part of the security element 100 is provided on the transparent region 211. When the infrared light source irradiates the side of the security element 100 provided with the infrared reflective layer 110, the optically variable pattern is in a hidden state; when the infrared light source irradiates the side of the security element 100 not provided with the infrared reflective layer 110, the optically variable pattern can be observed. The visible light source irradiates any side of the security element 100, and the optically variable pattern can be observed. It is worth mentioning that the number of the transparent region 211 is at least one, i.e. the transparent region 211 can be one, two or more, and the transparent region 211 can be flexibly set according to actual needs.

[0109] In one embodiment according to the present application, the magnetic layer 120 of the security element 100 is provided on one side of the substrate layer 210, and at least one infrared reflective layer 110 of the security element 100 is provided on the other side of the substrate layer 210. The at least one infrared reflective layer 110 and the magnetic layer 120 are provided on opposite sides of the substrate layer 210. When the number of the infrared reflective layer 110 is one, the order of each layer structure is the infrared reflective layer 110, the substrate layer 210 and the magnetic layer 120, or the order of each layer structure is the magnetic layer 120, the substrate layer 210 and the infrared reflective layer 110; when the number of the infrared reflective layer 110 is two, the order of each layer structure is the infrared reflective layer 110, the substrate layer 210, the magnetic layer 120 and the infrared reflective layer 110.

[0110] According to the anti-counterfeiting element and the anti-counterfeiting product, the first anti-counterfeiting information and the second anti-counterfeiting information can be obtained through the anti-counterfeiting element, the problem of single anti-counterfeiting information in the prior art is effectively solved, the anti-counterfeiting effect is improved, and the machine reading anti-counterfeiting performance of the magnetic pattern, especially the magnetic dynamic optically variable pattern, is improved. In addition, the color change effects observed by the electromagnetic waves in the first wavelength range and the electromagnetic waves in the second wavelength range are inconsistent, and the color change effects observed on the two sides of the anti-counterfeiting element irradiated by the electromagnetic waves in the second wavelength range may also be inconsistent (in the case that the anti-counterfeiting element is provided with the infrared reflection layer on only one side), and the design method is beneficial to further improving the anti-counterfeiting effect and is not easy to be imitated by similar products.

[0111] In the present application, the terms "first", "second", "third" are only for descriptive purpose, and should not be understood as indicating or implying relative importance; the term "multiple" refers to two or more, unless otherwise explicitly limited. The terms "mounting", "connecting", "connecting", "fixing" and the like should be understood in a broad sense, for example, "connecting" can be fixed connection, or detachable connection, or integral connection; "connecting" can be direct connection, or indirect connection through intermediate medium. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0112] In the description of the present application, it should be understood that the terms "upper", "lower", "left", "right", "front", "back" and the like indicate the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the devices or units referred to must have a specific direction, be constructed and operated in a specific orientation, therefore, should not be understood as a limitation on the present application.

[0113] In the description of the present application, the terms "one embodiment", "some embodiments", "a specific embodiment" and the like mean that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In the present application, the illustrative description of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0114] The above is only the preferred embodiment of the present application, and is not used to limit the present application. For those skilled in the art, the present application can have various modifications and changes. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. An anti-counterfeiting element, characterized in that, include: At least one infrared reflective layer (110) has a transmission effect on electromagnetic waves in a first wavelength range and a reflection effect on electromagnetic waves in a second wavelength range. A magnetic layer (120) is disposed on one side of the infrared reflective layer (110). The magnetic layer (120) has absorption characteristics for electromagnetic waves in the third wavelength range. At least a portion of the first wavelength range is within the third wavelength range. The magnetic layer (120) has first anti-counterfeiting information, which is a detectable magnetic signal. An optical variable layer (130) is disposed on the magnetic layer (120). The optical variable layer (130) has dynamic optical variation characteristics. When electromagnetic waves are injected into the anti-counterfeiting element, second anti-counterfeiting information can be obtained based on the optical variable layer (130). The first wavelength range is 400nm to 700nm; the second wavelength range is 800nm ​​to 1500nm; and the third wavelength range is 400nm to 1500nm. The second anti-counterfeiting information is a color change effect, which includes optically variable patterns and the hidden state of the optically variable patterns.

2. The anti-counterfeiting element according to claim 1, characterized in that, The magnetic layer (120) and the optical variable layer (130) are an integral structure. The magnetic layer (120) and the optical variable layer (130) together form an optical variable magnetic layer (140), which has the magnetic signal and the dynamic optical variation characteristics.

3. The anti-counterfeiting element according to claim 2, characterized in that, The optically variable magnetic layer (140) is a layered structure formed by printing or coating ink containing magnetic optically variable pigments under the action of a directional magnetic field.

4. The anti-counterfeiting element according to claim 1, characterized in that, The number of infrared reflective layers (110) is one. The side of the anti-counterfeiting element with the infrared reflective layer (110) has infrared reflection characteristics, and the other side of the anti-counterfeiting element has infrared absorption characteristics.

5. The anti-counterfeiting element according to claim 4, characterized in that, The magnetic layer (120) is disposed between the infrared reflective layer (110) and the optical variable layer (130).

6. The anti-counterfeiting element according to claim 1, characterized in that, The number of infrared reflective layers (110) is two, the magnetic layer (120) and the optical variable layer (130) are disposed between the two infrared reflective layers (110), and each side of the anti-counterfeiting element has infrared reflective features.

7. The anti-counterfeiting element according to claim 1, characterized in that, The coverage area of ​​the magnetic layer (120) is not greater than the coverage area of ​​the infrared reflective layer (110).

8. The anti-counterfeiting element according to any one of claims 1 to 7, characterized in that, The infrared reflective layer (110) has a transmittance of not less than 80% for electromagnetic waves in the first wavelength range; and / or the infrared reflective layer (110) has a reflectance of not less than 80% for electromagnetic waves in the second wavelength range.

9. The anti-counterfeiting element according to any one of claims 1 to 7, characterized in that, The infrared reflective layer (110) is a layered structure formed by overlapping a first dielectric layer and a second dielectric layer, wherein the refractive index of the first dielectric layer is greater than that of the second dielectric layer.

10. The anti-counterfeiting element according to any one of claims 1 to 7, characterized in that, The thickness of the infrared reflective layer (110) is no greater than 200 nm.

11. An anti-counterfeiting product, characterized in that, include: Substrate layer (210); The anti-counterfeiting element as described in any one of claims 1 to 10 is disposed on the substrate layer (210).

12. The anti-counterfeiting product according to claim 11, characterized in that, The infrared reflective layer (110) of the anti-counterfeiting element is applied to the substrate layer (210) by means of labeling, hot stamping or copying. The optically variable magnetic layer (140) of the anti-counterfeiting element is printed onto the substrate layer (210); or The magnetic layer (120) of the anti-counterfeiting element is applied to the substrate layer (210) by means of labeling, hot stamping or copying. The optical variable layer (130) of the anti-counterfeiting element is applied to the substrate layer (210) by means of labeling, hot stamping or copying.

13. The anti-counterfeiting product according to claim 11, characterized in that, The substrate layer (210) has a transparent area (211), and at least a portion of the anti-counterfeiting element is disposed in the transparent area (211).

14. The anti-counterfeiting product according to claim 11, characterized in that, The magnetic layer (120) of the anti-counterfeiting element is disposed on one side of the substrate layer (210), and at least one infrared reflective layer (110) of the anti-counterfeiting element is disposed on the other side of the substrate layer (210).

Citation Information

Patent Citations

  • Phase optical variable anti-counterfeiting element

    CN112644200A

  • Magnetic infrared anti-counterfeiting pigment

    CN114664171A