Wear-resistant multi-principal-element alloy nitride film and method for manufacturing the same

Abstract

This invention discloses a wear-resistant multi-principal-element alloy nitride thin film, characterized by: directly depositing a (VCoNi)N layer on a silicon substrate using argon and nitrogen as ionizing gases. x Thin film; the (VCoNi)N x The thin film contains the following elements by atomic percentage: V 19-39%, Co 19-39%, Ni 19-39%, and Ni 0-35%. The (VCoNi)N... x The thin film was obtained by magnetron sputtering deposition on the substrate surface, and the crystal phase has a face-centered cubic structure. The technical advantage of this invention is that it produces a (VCoNi)N film with a face-centered cubic structure using magnetron sputtering. x Compared to the original multi-principal element alloy VCoNi film and alloy nitride film, this film exhibits higher hardness and excellent wear resistance, with a hardness exceeding 8 GPa and a wear rate below 3.99 × 10⁻⁶. ‑6 mm 3 / Nm exhibits excellent wear resistance; it can provide good protection for the substrate in high-wear environments at a low cost, and is easy to implement and promote in industry.

Description

TECHNICAL FIELD

[0001] The application relates to the technical field of wear-resistant alloy nitride films, in particular to a wear-resistant multi-principal-element alloy nitride film and a preparation method thereof. BACKGROUND

[0002] In the fields of industrial production, aerospace, automobile industry, etc., the friction and wear behavior between materials can greatly reduce the service life of parts, causing serious economic losses. Coating a protective coating on the surface of a workpiece to increase the hardness or corrosion resistance of the surface of the workpiece, or adding a lubricant or grease to the friction contact to reduce wear is considered as a feasible protective measure. However, under extremely harsh application conditions, such as high temperature and high speed, ultra-low temperature, strong radiation, etc., ordinary protective coatings or the addition of lubricants are difficult to meet the requirements, and the development of new protective films has become a potential solution to meet the service requirements of parts under the above extreme conditions.

[0003] The multi-principal-element alloy nitride is a multi-principal-element cationic ceramic formed by adding non-metallic elements such as boron, carbon, nitrogen, oxygen, silicon and phosphorus to high-entropy alloys and medium-entropy alloys. The multi-principal-element cationic ceramic still has the high-entropy effect, slow diffusion effect, lattice distortion effect and cocktail effect possessed by the multi-principal-element alloy. It has excellent mechanical properties, high-temperature resistance, corrosion resistance and wear resistance. Compared with traditional ceramic materials which are highly brittle, it has higher fracture toughness and is not prone to cracking under strong mechanical force or strong impact, thereby having higher durability and being more widely applied. The multi-principal-element alloy nitride layer has excellent mechanical properties and corrosion resistance, and can meet more complex and severe working conditions compared with commonly used alloy nitride layers such as TiN and CrN. In the past decade, it has been widely studied and received wide attention in the fields of optoelectronics, hard tools, chips, aviation, aerospace and ships.

[0004] The introduction of V elements into the multi-principal-element system can increase the lattice distortion of the material and is considered as an element that can more effectively improve the mechanical properties of the material. For example, VCoNi is a medium-entropy alloy with a face-centered cubic phase, which has very high yield strength, and studies have shown that VCoNi still exhibits excellent mechanical properties in a wide temperature range. In addition, studies have shown that V can form a Magnéli phase at high temperatures, thereby serving as a solid lubricant to reduce the friction and wear of materials at high temperatures. The introduction of nitrogen elements into VCoNi can not only enable the film to exhibit excellent mechanical properties of the multi-principal-element alloy nitride, but also can play the self-lubricating performance of V elements at high temperatures, thereby having wide application and commercial production prospects in the industrial field. SUMMARY

[0005] The application aims to provide a wear-resistant multi-principal-element alloy nitride film and a preparation method thereof, which can achieve the technical effects proposed in the background.

[0006] To achieve the above object, the application provides the following technical scheme: a wear-resistant multi-principal-element alloy nitride film, comprising a (VCoNi)N x film plated on a silicon substrate by using argon and nitrogen as ionization gas

[0007] The (VCoNi)N x film contains the following elements in terms of atomic percentage:

[0008] V 19-39%, Co 19-39%, Ni 19-39%, and N 0-35%.

[0009] Preferably, the (VCoNi)N x film is deposited on the surface of a substrate by a magnetron sputtering technique and has a face-centered cubic structure.

[0010] Preferably, the (VCoNi)N x film has a hardness higher than 8 GPa and a thickness of 500-3000 nm.

[0011] Preferably, the (VCoNi)N x film uses a VCoNi alloy target material, the molar mass ratio of V, Co and Ni in the VCoNi alloy target material is 1:1:1, and the purity of the VCoNi alloy target material is higher than 99.9%.

[0012] Preferably, the total flow rate of the argon and nitrogen gas is 47-53 sccm.

[0013] Preferably, the substrate is a single-side polished monocrystalline silicon wafer or a polished stainless steel sheet, which is first cleaned by ultrasonic cleaning with acetone for 15-20 min, then cleaned by ultrasonic cleaning with alcohol for 15-20 min, then cleaned by ultrasonic cleaning with pure water for 15-20 min, and finally dried.

[0014] A preparation method of a wear-resistant multi-principal-element alloy nitride film, specifically comprising the following steps:

[0015] Step 1: placing a substrate and a VCoNi alloy target material into a vacuum deposition environment, connecting a power source to the VCoNi alloy target material, and introducing ionization gas into the deposition environment;

[0016] Step 2: turning on the power source, depositing the VCoNi alloy target material on the substrate to obtain a (VCoNi)N x alloy nitride film by using a power source power of 80-200 W, a substrate bias of -60 to -100 V, a substrate rotation speed of 2-4 rpm, a substrate temperature of 20-300 ℃, and a deposition rate of 6.39-6.67 nm / min, and turning off the power source and cooling for 10-20 min after depositing for 30-60 min.

[0017] Step three: repeat step two until (VCoNi)N x The thin film reaches the required thickness, and the wear-resistant multi-principal element alloy nitride thin film is prepared.

[0018] Preferably, the background vacuum degree of the deposition environment in step one is 8*10 -5 Pa, and the vacuum degree during deposition is 0.18-0.28 Pa.

[0019] Compared with the prior art, the application has the beneficial effects that:

[0020] 1. The wear-resistant multi-principal element alloy nitride provided by the application is composed of corrosion-resistant and hard metal elements such as V, Co and Ni, and is a weak nitride-forming element except V, and has a face-centered cubic structure prepared by using a magnetron sputtering technology.

[0021] 2. The application provides a preparation method of a wear-resistant (VCoNi)N x thin film, compared with the original multi-principal element alloy VCoNi and the alloy nitride VN thin film, the (VCoNi)N x thin film shows higher hardness and excellent wear resistance, the hardness is higher than 10 GPa, and when the nitrogen content of the thin film is about 33%, the wear rate is as low as 3.99*10 -6 mm 3 / Nm; the substrate can be well protected in a high wear environment.

[0022] 3. The application provides a preparation method of a wear-resistant (VCoNi)N x thin film, and the wear-resistant (VCoNi)N x thin film is prepared, the cost is low, and the method is easy to realize and popularize in industry. DETAILED DESCRIPTION

[0023] Figure 1 It is an XRD image of sample 1 prepared by the application.

[0024] Figure 2 It is a scanning electron microscope cross-section photo of sample 1 and sample 2 prepared by the application: (a) nitrogen flow rate is 50%; (b) nitrogen flow rate is 100%.

[0025] Figure 3 It is a hardness graph of sample 1 and sample 2, VN thin film and VCoNi thin film prepared by the application.

[0026] Figure 4The wear surface scanning electron microscope photos of the VCoNi film after rubbing for 20 minutes under the conditions of reciprocating friction load 0.5 N and frequency 3 Hz are prepared for sample 1 and sample 2 of the present application; (a1), (a2) are the VCoNi film; (b1), (b2) are sample 1; (c1), (c2) are sample 2.

[0027] Figure 5 The wear rate diagrams of the VCoNi film after rubbing for 20 minutes under the conditions of reciprocating friction load 0.5 N and frequency 3 Hz are prepared for sample 1 and sample 2 of the present application. DETAILED DESCRIPTION

[0028] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present application.

[0029] In view of the deficiencies in the prior art, the present inventors have obtained the technical solutions of the present application through a large amount of research and practice. The technical solutions, the example processes and principles thereof will be further described as follows.

[0030] As an aspect of the technical solutions of the present application, the wear-resistant multi-principal-element alloy nitride film is selected from elements V, Co and Ni with good corrosion resistance and mechanical properties, and the molecular formula is (VCoNi)N x In addition, the wear-resistant multi-principal-element alloy nitride film contains the following elements according to the atomic percentage content: V 19-39%, Co 19-39%, Ni 19-39%, and N 0-35%.

[0031] In some preferred examples, the wear-resistant multi-principal-element alloy nitride film is obtained by depositing on the surface of a Si substrate by a magnetron sputtering technology, and has a face-centered cubic structure.

[0032] Further, the wear-resistant multi-principal-element alloy nitride film (VCoNi)N x Compared with the multi-principal-element alloy film VCoNi or the alloy nitride film VN, the wear-resistant multi-principal-element alloy nitride film has more excellent mechanical properties and wear resistance. On the one hand, the formation of the nitride ceramic phase makes the multi-principal-element alloy nitride film have more excellent mechanical properties than the multi-principal-element alloy film; on the other hand, the unique effects of the multi-principal-element alloy nitride, including high-entropy effect, slow diffusion effect, lattice distortion effect and cocktail effect, make the multi-principal-element alloy nitride film have more excellent wear resistance than the traditional alloy nitride.

[0033] As another aspect of the technical scheme of the present application, the method for preparing the wear-resistant multi-principal-element alloy nitride film comprises the following steps:

[0034] The used substrate is a single-crystal silicon wafer or a mirror-polished stainless steel sheet, which is first cleaned by ultrasonic cleaning with acetone for 15-20 min, then cleaned by ultrasonic cleaning with alcohol for 15-20 min, and finally cleaned by ultrasonic cleaning with pure water for 15-20 min, and then dried;

[0035] Further, the used target material is a VCoNi alloy target material, the molar mass ratio of V, Co and Ni in the target material is 1:1:1, and the purity is above 99.9%.

[0036] In some embodiments, the preparation scheme comprises the following steps: introducing a sputtering gas, using a magnetron sputtering technique, the used sputtering power is 80-200 W, the substrate bias is -60 to -100 V, the substrate rotation speed is 2-4 rpm, and the substrate temperature is 20-300℃. x After depositing for 30-60 min, the power is turned off and the target material is cooled for 10-20 min, and the deposition time is 1-9 h.

[0037] Further, the sputtering gas comprises nitrogen and an inert gas, and the inert gas is preferably argon.

[0038] In some embodiments, the preparation scheme further comprises the following step: first, the sputtering target material is subjected to Ar particle bombardment to clean the oxides and other impurities on the surface of the target material.

[0039] In some embodiments, the preparation scheme further comprises the following step: first, the reaction cavity is pumped to a base vacuum of less than 8.0x10 -5 Pa.

[0040] In summary, by the above technical scheme, the wear-resistant multi-principal-element alloy nitride film provided by the present application is composed of elements V, Co and Ni which have good corrosion resistance and mechanical properties, and is obtained by magnetron sputtering on the surface of a substrate, and has a face-centered cubic structure. The film has excellent mechanical properties and good wear resistance, and the hardness is higher than 10 GPa.

[0041] The present application is further described by the following examples, but the present application is not limited by these examples. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application shall be included in the protection scope of the present application.

[0042] Example 1

[0043] In this example, the substrate material is a silicon wafer, and the surface of the substrate is a face-centered cubic crystal structure (VCoNi)Nx Wear resistant multi-principal element alloy nitride thin film.

[0044] The (VCoNi)N x The wear resistant multi-principal element alloy nitride thin film is prepared by the following method:

[0045] The single-side polished monocrystalline silicon wafer is first ultrasonically cleaned with acetone for 15-20 min, then ultrasonically cleaned with alcohol for 15-20 min, and finally ultrasonically cleaned with pure water for 15-20 min, and then dried. Then the substrate is placed into a magnetron sputtering cavity, and vacuumized to a vacuum degree of 8.0 x 10 -5 Pa. The argon and nitrogen valves are opened, the nitrogen flow is adjusted to 50 sccm, and the target material is bombarded for 5 min to clean the oxide and impurities on the surface of the target material.

[0046] During the sputtering process, the sputtering power is 190 W, the substrate bias is -100 V, and the substrate temperature is 30°C. The argon flow is kept at 25 sccm and the nitrogen flow is kept at 25 sccm. The power is turned off and cooled for 10 min after each 30 min of deposition, and the total deposition time is 5.1 h. The obtained (VCoNi)N x thin film is recorded as sample 1.

[0047] Example 2

[0048] The single-side polished monocrystalline silicon wafer is first ultrasonically cleaned with acetone for 15-20 min, then ultrasonically cleaned with alcohol for 15-20 min, and finally ultrasonically cleaned with pure water for 15-20 min, and then dried. Then the substrate is placed into a magnetron sputtering cavity, and vacuumized to a vacuum degree of 8.0 x 10 -5 Pa. The argon and nitrogen valves are opened, the nitrogen flow is adjusted to 50 sccm, and the target material is bombarded for 5 min to clean the oxide and impurities on the surface of the target material.

[0049] During the sputtering process, the sputtering power is 200 W, the substrate bias is -100 V, and the substrate temperature is 30°C. The nitrogen flow is kept at 50 sccm. The power is turned off and cooled for 10 min after each 30 min of deposition, and the total deposition time is 5 h. The obtained (VCoNi)N x thin film is recorded as sample 2.

[0050] Example 3

[0051] The single-side polished monocrystalline silicon wafer is first ultrasonically cleaned with acetone for 15-20 min, then ultrasonically cleaned with alcohol for 15-20 min, and finally ultrasonically cleaned with pure water for 15-20 min, and then dried. Then the substrate is placed into a magnetron sputtering cavity, and vacuumized to a vacuum degree of 8.0 x 10 -5Pa. Open the argon and nitrogen valves and adjust the argon flow rate to 40 seem and the nitrogen flow rate to 10 seem. Bombard the target for 5 min to clean the surface of the target of oxides and impurities.

[0052] During sputtering, the sputtering power was 120 W, the substrate bias was -81 V, and the substrate temperature was 30 °C. The argon flow rate was kept at 40 seem and the nitrogen flow rate was kept at 10 seem. The power was turned off and the chamber was cooled for 10 min after every 30 min of deposition. The total deposition time was 4.5 h. The (VCoNi)N x The thin film is recorded as sample 3.

[0053] Example 4

[0054] A single-side polished single crystal silicon wafer was first cleaned ultrasonically with acetone for 15-20 min, then cleaned ultrasonically with alcohol for 15-20 min, and finally cleaned ultrasonically with pure water for 15-20 min, and then dried. The substrate was then placed in a magnetron sputtering chamber, which was evacuated to a vacuum degree of 8.0 x 10 -5 Pa. Open the argon and nitrogen valves and adjust the argon flow rate to 40 seem and the nitrogen flow rate to 10 seem. Bombard the target for 5 min to clean the surface of the target of oxides and impurities.

[0055] During sputtering, the sputtering power was 120 W, the substrate bias was -81 V, and the substrate temperature was 30 °C. The argon flow rate was kept at 40 seem and the nitrogen flow rate was kept at 10 seem. The power was turned off and the chamber was cooled for 10 min after every 30 min of deposition. The total deposition time was 4.5 h. The (VCoNi)N x The thin film is recorded as sample 3.

[0056] Example 5

[0057] A single-side polished single crystal silicon wafer was first cleaned ultrasonically with acetone for 15-20 min, then cleaned ultrasonically with alcohol for 15-20 min, and finally cleaned ultrasonically with pure water for 15-20 min, and then dried. The substrate was then placed in a magnetron sputtering chamber, which was evacuated to a vacuum degree of 8.0 x 10 -5 Pa. Open the argon and nitrogen valves and adjust the argon flow rate to 40 seem and the nitrogen flow rate to 10 seem. Bombard the target for 5 min to clean the surface of the target of oxides and impurities.

[0058] During sputtering, the sputtering power was 120 W, the substrate bias was -81 V, and the substrate temperature was 30 °C. The argon flow rate was kept at 40 seem and the nitrogen flow rate was kept at 10 seem. The power was turned off and the chamber was cooled for 10 min after every 30 min of deposition. The total deposition time was 4.5 h. The (VCoNi)N x The thin film is recorded as sample 3.

[0059] Example 6

[0060] The single-side polished monocrystalline silicon wafer was first ultrasonically cleaned with acetone for 15-20 min, then ultrasonically cleaned with alcohol for 15-20 min, and finally ultrasonically cleaned with pure water for 15-20 min, and then dried. The substrate was then placed in a magnetron sputtering cavity, and vacuumed to a vacuum degree of 8.0 x 10 -5 Pa. The argon and nitrogen valves were opened, the argon flow was adjusted to 25 seem, the nitrogen flow was adjusted to 25 seem, and the target material was bombarded for 5 min to clean the oxide and impurities on the surface of the target material.

[0061] During sputtering, the sputtering power was 120 W, the substrate bias was -80 V, and the substrate temperature was 150°C. The argon flow was kept at 25 seem, and the nitrogen flow was kept at 25 seem. The power was turned off and the system was cooled for 10 min after each 30 min of deposition, and the total deposition time was 1 h. The (VCoNi)N x thin film obtained is recorded as sample 6.

[0062] Comparative Example 1

[0063] The single-side polished monocrystalline silicon wafer was first ultrasonically cleaned with acetone for 15-20 min, then ultrasonically cleaned with alcohol for 15-20 min, and finally ultrasonically cleaned with pure water for 15-20 min, and then dried. The substrate was then placed in a magnetron sputtering cavity, and vacuumed to a vacuum degree of 8.0 x 10 -5 Pa. The argon and nitrogen valves were opened, the argon flow was adjusted to 30 seem, the nitrogen flow was adjusted to 20 seem, and the target material was bombarded for 5 min to clean the oxide and impurities on the surface of the target material.

[0064] During sputtering, the sputtering power was 120 W, the substrate bias was -80 V, and the substrate temperature was 30°C. The argon flow was kept at 30 seem, and the nitrogen flow was kept at 20 seem. The power was turned off and the system was cooled for 10 min after each 30 min of deposition, and the total deposition time was 9 h. The VN nitride film obtained is recorded as sample 7.

[0065] Comparative Example 2

[0066] The single-side polished monocrystalline silicon wafer was first ultrasonically cleaned with acetone for 15-20 min, then ultrasonically cleaned with alcohol for 15-20 min, and finally ultrasonically cleaned with pure water for 15-20 min, and then dried. The substrate was then placed in a magnetron sputtering cavity, and vacuumed to a vacuum degree of 8.0 x 10 -5 Pa. The argon and nitrogen valves were opened, the argon flow was adjusted to 50 seem, and the target material was bombarded for 5 min to clean the oxide and impurities on the surface of the target material.

[0067] In the sputtering process, the sputtering power is 200 W, the substrate bias is -100 V, and the substrate temperature is 30 DEG C. The argon flow rate is kept at 50 sccm. The power is turned off and the sample is cooled for 10 min after 30 min of deposition. The total deposition time is 3 h. The obtained VCoNi thin film is denoted as sample 8.

[0068] The elemental composition contents of the three multi-principal element alloy thin film samples with different nitrogen flow rates prepared in examples 1, 2, and comparative example 2 are shown in Table 1: the nitrogen flow rates are 0 sccm, 25 sccm, and 50 sccm, respectively, and the different (VCoNi)N x The multi-principal element alloy nitride thin films are simply denoted as: VCoNi, N25, and N50.

[0069] Table 1: (VCoNi)N x Elemental composition contents of the multi-principal element alloy nitride thin film samples

[0070]

[0071] As can be seen from Table 1, the three (VCoNi)N x The atomic percentage contents of the alloy elements in the multi-principal element alloy nitride thin film samples meet the atomic percentage content requirements of the multi-principal element alloy elements.

[0072] Figure 1 is the XRD image of (VCoNi)N x Since the XRD image results of (VCoNi)N x prepared in the examples are basically the same, only the image of sample 1 is listed here, and it can be seen that the prepared (VCoNi)N x thin film has a face-centered cubic crystal structure.

[0073] Figure 2 is the cross-sectional scanning electron microscope images of (VCoNi)N x thin film samples 1 and 2 prepared by the present application: (a) nitrogen flow rate of 50%; (b) nitrogen flow rate of 100%. In both figures, it can be seen that the prepared (VCoNi)N x thin film presents a dense columnar structure.

[0074] Figure 3 is the hardness image of sample 1 and sample 2, VN thin film, and VCoNi thin film prepared by the present application. It can be seen that the hardness of (VCoNi)N x is greatly improved compared with the multi-principal element alloy thin film and the alloy nitride thin film, and increases with the increase of the nitrogen flow rate, and the hardness of the prepared (VCoNi)N x thin film is higher than 10 GPa.

[0075] Figure 4 are the wear surface scanning electron microscope photos of the VCoNi thin film and the samples 1 and 2 prepared by the present application after the VCoNi thin film is rubbed for 20 min under the conditions of reciprocating friction load 0.5 N and frequency 3 Hz: (a1), (a2) are the VCoNi thin film; (b1), (b2) are the sample 1; (c1), (c2) are the sample 2. Adhesive oxide and furrows are observed on the surfaces of the three films, and as the nitrogen content increases, the wear scar becomes narrower, the adhesion decreases, and the furrows become shallower. This is due to the formation of the nitrided layer, the overall oxidation resistance of the thin film is improved, and at the same time, due to the improvement of the hardness and elastic modulus of the thin film, the scratching of the abrasive debris on the surface during the friction process is resisted, thereby reducing the furrows.

[0076] Figure 4 are the wear rate diagrams of the VCoNi thin film and the samples 1 and 2 prepared by the present application after the VCoNi thin film is rubbed for 20 min under the conditions of reciprocating friction load 0.5 N and frequency 3 Hz. It can be seen that compared with the VCoNi thin film, the wear rate of the sample 2 is reduced to 30% of the original VCoNi thin film. It can be seen that the wear resistance of the prepared nitrided film is better, and as the nitrogen content increases, the (VCoNi)N x thin film has better wear resistance.

[0077] Obviously, those skilled in the art can make various modifications and variations to the present application without departing from the spirit and scope of the present application. Thus, if these modifications and variations of the present application fall within the scope of the claims of the present application and their equivalent technologies, the present application also intends to include these modifications and variations.

Claims

1. A wear resistant multi-principal element alloy nitride film, characterized by: A layer of (VCoNi)N is directly plated on a silicon substrate using argon and nitrogen as ionization gas x Thin film; (VCoNi)N x The thin film comprises the following elements in atomic percentage: V 19~39%, Co 19~39%, Ni 19~39%, N 0~35%, wherein the percentage content of N is greater than zero.

2. The wear resistant multi-principal element alloy nitride film of claim 1, wherein: said (VCoNi)N x The thin films were deposited on substrates by magnetron sputtering and have a face-centered cubic structure.

3. The wear resistant multi-principal element alloy nitride film of claim 1, wherein: (VCoNi)N x The thin film has a hardness higher than 10 GPa and a thickness controlled between 500 and 3000 nm.

4. The wear resistant multi-principal element alloy nitride film of claim 1, wherein: The (VCoNi)N is prepared x The target material used in the thin film is a VCoNi alloy target material, the atomic content ratio of V, Co and Ni in the VCoNi alloy target material is 1:1:1, and the purity is above 99.9%.

5. The wear resistant multi-principal element alloy nitride film of claim 1, wherein: The total flow rate of the argon and nitrogen gas is 47~53 sccm.

6. The wear resistant multi-principal element alloy nitride film of claim 1, wherein: The substrate is a single-side polished monocrystalline silicon wafer or a polished mirror stainless steel sheet, which is first cleaned by ultrasonic cleaning with acetone for 15~20 min, then cleaned by ultrasonic cleaning with alcohol for 15~20 min, then cleaned by ultrasonic cleaning with pure water for 15~20 min, and finally dried before use.

7. A method for preparing a wear-resistant multi-principal-element alloy nitride thin film, characterized in that: Specifically comprising the following steps: Step one: placing the substrate and the VCoNi alloy target into a vacuum deposition environment, connecting the direct current power source with the VCoNi alloy target, and introducing a specific proportion of ionized gas into the deposition environment; Step two: depositing a VCoNi alloy film on the substrate by magnetron sputtering. Step two: deposit VCoNi alloy target material on the substrate to get (VCoNi)N with power 80~200 W, substrate bias -60~-100 V, substrate rotation speed 2~4 rpm, substrate temperature 20~300 ℃, deposition rate 6.39~6.67 nm / min x The alloy nitride film is cooled for 10~20 min after depositing for 30~60 min. Step three: repeat step two until (VCoNi)N x The thin film reaches the required thickness, and the wear-resistant multi-principal element alloy nitride thin film is prepared.

8. The method for preparing a wear-resistant multi-principal-element alloy nitride thin film as described in claim 7, characterized in that: The base vacuum of the deposition environment in step one is 8x10 -5 Pa, and the vacuum during deposition is 0.18~0.28 Pa.

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