A magnetron sputtering device

Abstract

The present invention discloses a magnetron sputtering device; it includes a sputtering assembly and a bias assembly; two sputtering assemblies are provided, the two sputtering assemblies are arranged opposite to each other, and a bias assembly is provided on one side of the two sputtering assemblies; the sputtering assembly is connected to a negative power supply, the bias assembly is connected to a positive power supply, and the bias assembly is used to repel the sputtering ions generated by the sputtering assembly onto a substrate. When the sputtering assembly is sputtering, it will have sputtering ions, sputtering molecular clusters and electrons at the same time. The sputtering assemblies arranged opposite to each other sputter the sputtering ions, sputtering molecular clusters and electrons they generate to the middle area, the bias assembly repels the sputtering ions onto the substrate, attracts the electrons to the bias assembly, and the sputtering molecular clusters remain in the area between the two sputtering assemblies. In this way, only the sputtering ions can be bombarded onto the substrate, while the sputtering molecular clusters and electrons can be prevented from bombarding the substrate, thereby ensuring the uniformity of the coating, improving the coating quality, and reducing the temperature increase of the substrate.

Description

Technical Field

[0001] The present invention relates to the technical field of magnetron sputtering, and in particular to a magnetron sputtering device. Background Art

[0002] In magnetron sputtering, the material to be deposited serves as a target, fixed to a cathode, with the substrate serving as the anode. The system is evacuated to a high vacuum, then filled with gas. A high voltage is applied between the cathode and anode, creating a glow discharge. During the sputtering process, the coupling of magnetic and electric fields causes electrons to spiral near the target surface, increasing the ionization rate of the gas molecules. The resulting cations bombard the target at high speeds under the influence of the electric field, causing the sputtered ions to detach from the target surface and deposit on the substrate, forming a thin film.

[0003] In the prior art, the target material is usually placed facing the substrate so that the sputtered ions of the target material are separated from the target material and deposited on the substrate. When bombarding the target material, the target material will produce larger sputtered molecular clusters while producing smaller sputtered ions. The sputtered molecular clusters will also be deposited on the substrate. This will cause the thin film formed on the substrate to have larger particles and affect the coating effect. Summary of the Invention

[0004] The main technical problem solved by the present invention is to provide a magnetron sputtering device to solve the problems of large particles on the film, uneven coating and poor quality during magnetron sputtering coating.

[0005] In order to solve the above technical problems, a technical solution adopted by the present invention is to provide a magnetron sputtering device, including a sputtering assembly and a bias assembly; two sputtering assemblies are provided, the two sputtering assemblies are arranged opposite to each other, and a bias assembly is provided on one side of the two sputtering assemblies; the sputtering assembly is connected to a negative power supply, and the bias assembly is connected to a positive power supply, and the bias assembly is used to repel the sputtering ions generated by the sputtering assembly onto a substrate.

[0006] Preferably, the sputtering assembly includes an anode component, a sputtering insulating component, a magnetic component and a target material. The anode component is arranged around the sputtering insulating component, the magnetic component and the target material. The sputtering insulating component, the magnetic component and the target material are arranged in sequence from the outside to the inside in the anode component. The magnetic component is connected to the negative power supply, and the anode component is connected to the positive power supply.

[0007] Preferably, the sputtering assembly further includes a sputtering cooling member, which is disposed between the magnetic member and the target material and is used to reduce the temperature of the target material.

[0008] Preferably, the bias assembly is parallel to the substrate, and the target is perpendicular to the bias assembly and the substrate.

[0009] Preferably, the bias assembly includes a biasing member, and the biasing member is spaced apart from the sputtering assembly.

[0010] Preferably, the bias assembly further includes a bias insulating plate and a bias fixing plate, the bias insulating plate is provided with a bias member, the bias fixing plate is provided with a bias insulating plate, and the bias fixing plate is grounded.

[0011] Preferably, the magnetic component includes a mounting sub-component and multiple magnetic sub-components, the mounting sub-component includes a longitudinally arranged connecting portion and a vertically arranged mounting portion, the outer end of the connecting portion passes through the anode component to connect to the negative power supply, the inner end of the connecting portion is connected to the middle of the mounting portion, and the multiple magnetic sub-components are arranged vertically on the inner side surface of the mounting portion.

[0012] Preferably, a cooling groove is provided on a side of the sputtering cooling member adjacent to the target material, and the cooling groove is used to allow cooling liquid to flow into.

[0013] Preferably, the bias member includes a first bias portion and a second bias portion, the first bias portion is adjacent to the sputtering assembly and perpendicular to the target material, the second bias portion is located in the middle of the first bias portion, passes through the bias insulating plate and the bias fixing plate, extends away from the sputtering assembly, and is parallel to the target material.

[0014] Preferably, a cooling hole is provided on the first biasing portion, and the cooling hole is used to allow cooling liquid to pass through.

[0015] The beneficial effects of the present invention are as follows: in the present invention, when the sputtering components are sputtering, sputtering ions, sputtering molecular clusters, and electrons are simultaneously generated. The opposing sputtering components sputter the generated sputtering ions, sputtering molecular clusters, and electrons toward the intermediate region. The bias component repels the sputtering ions onto the substrate and attracts the electrons to the bias component, leaving the sputtering molecular clusters in the region between the two sputtering components. This allows only the sputtering ions to bombard the substrate, while preventing the sputtering molecular clusters and electrons from bombarding the substrate, ensuring the uniformity of the coating, improving the coating quality, and reducing the temperature rise of the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 is a structural diagram according to an embodiment of the present invention;

[0017] Figure 2 is a schematic diagram of the movement directions of sputtered ions, sputtered molecular clusters and electrons according to one embodiment of the present invention;

[0018] Figure 3 is a schematic diagram of the movement direction of sputtering ions according to one embodiment of the present invention;

[0019] Figure 4 is a schematic diagram of the moving direction of sputtering molecular clusters according to one embodiment of the present invention;

[0020] Figure 5 FIG. 4 is a schematic diagram of the moving direction of electrons according to an embodiment of the present invention. DETAILED DESCRIPTION

[0021] To facilitate understanding of the present invention, the present invention will be described in more detail below with reference to the accompanying drawings and specific embodiments. Preferred embodiments of the present invention are shown in the accompanying drawings. However, the present invention can be implemented in many different forms and is not limited to the embodiments described in this specification. Rather, these embodiments are provided to provide a more thorough and comprehensive understanding of the disclosure of the present invention.

[0022] It should be noted that, unless otherwise defined, all technical and scientific terms used in this specification have the same meanings as those commonly understood by those skilled in the art to which this invention pertains. The terms used in this specification are intended solely for the purpose of describing specific embodiments and are not intended to limit the invention. The term "and / or" as used in this specification includes any and all combinations of one or more of the associated listed items.

[0023] For the description of the present invention, the non-limiting Figure 1 The marks "up", "down", "left" and "right" shown in the figures are used to facilitate understanding of the embodiment and are not intended to limit the present invention. Wherein, the left-right direction refers to the longitudinal direction, and the up-down direction refers to the vertical direction.

[0024] Figure 1-Figure 5 An embodiment of the magnetron sputtering device of the present invention is shown, including a sputtering assembly 1 and a bias assembly 2; two sputtering assemblies 1 are provided, the two sputtering assemblies 1 are arranged opposite to each other, and the bias assembly 2 is provided on one side of the two sputtering assemblies 1; the sputtering assembly 1 is connected to a negative power supply -V, and the bias assembly 2 is connected to a positive power supply +V, and the bias assembly 2 is used to repel the sputtering ions generated by the sputtering assembly 1 onto a substrate 3.

[0025] In the present invention, when sputtering, sputtering assembly 1 simultaneously produces sputtered ions, sputtered molecular clusters, and electrons. The opposing sputtering assemblies 1 sputter the generated sputtered ions, sputtered molecular clusters, and electrons toward the intermediate region. The bias assembly 2 repels the sputtered ions onto the substrate 3 and attracts the electrons to the bias assembly 2, leaving the sputtered molecular clusters in the region between the two sputtering assemblies 1. This ensures that only the sputtered ions bombard the substrate 3, while preventing the sputtered molecular clusters and electrons from bombarding the substrate 3. This ensures uniformity of the coating, improves coating quality, and reduces the temperature rise of the substrate 3.

[0026] The moving direction of sputtering ions is Figure 2 and Figure 3 As shown, the sputtered ions are positive ions, and the bias component 2 connected to the positive power supply +V repels the positive sputtered ions, bombarding the sputtered ions onto the substrate 3 arranged opposite to the bias component 2.

[0027] The moving direction M of the sputtered molecular cluster is as follows: Figure 2 and Figure 4As shown, the sputtered molecular clusters are relatively large. Although the bias assembly 2 can repel the sputtered ions onto the substrate 3, it is not sufficient to repel the sputtered molecular clusters with relatively large particles onto the substrate 3. This prevents the sputtered molecular clusters from bombarding the substrate 3, thereby preventing the film formed on the substrate 3 from having relatively large particles and causing the temperature of the substrate 3 to rise significantly.

[0028] The movement of electrons E is as follows Figure 2 and Figure 5 As shown, electrons flow from the negative power supply -V to the positive power supply +V, that is, from the sputtering component 1 to the bias component 2. This prevents the electrons from bombarding the substrate 3, causing the thin film formed on the substrate 3 to have uneven depressions and a significant increase in the temperature of the substrate 3.

[0029] The magnetron sputtering device includes a sealed housing (not shown in the figure), in which a sputtering assembly 1 and a bias assembly 2 are arranged.

[0030] Preferably, the sputtering assembly 1 includes an anode part 11, a sputtering insulating part 12, a magnetic part 13 and a target material 15. The anode part 11 is arranged around the sputtering insulating part 12, the magnetic part 13 and the target material 15. The sputtering insulating part 12, the magnetic part 13 and the target material 15 are arranged in sequence from the outside to the inside in the anode part 11, and the magnetic part 13 is connected to the negative power supply -V.

[0031] Preferably, the sputtering assembly 1 further includes a sputtering cooling member 14 , which is disposed between the magnetic member 13 and the target material 15 and is used to reduce the temperature of the target material 15 .

[0032] The anode member 11 includes a middle plate 111 and side plates 112 extending inward at both ends of the middle plate 111. The side plates 112 are arranged in parallel, and there is an opening between the side plates 112. The openings of the two anode members 11 are arranged opposite each other. The anode member 11 can be a metal outer cover used only to place the sputtering insulating member 12, the magnetic member 13 and the target material 15. Preferably, the anode is a metal outer cover and is connected to the positive power supply +V. When the anode member 11 is connected to the positive power supply +V, it can attract electrons away from the bias assembly 2 to the anode member 11, as shown in FIG. Figure 2 and Figure 5 As shown, the attraction of electrons can be further improved, and the electrons that the bias component 2 cannot attract are prevented from bombarding the substrate 3. The film on the substrate 3 is prevented from having uneven depressions, and the temperature rise of the substrate 3 is reduced.

[0033] Preferably, the sputtering insulating member 12 is disposed adjacent to the middle plate 111 , and the sputtering insulating member 12 is used to isolate the magnetic member 13 connected to the negative power supply -V from the anode member 11 connected to the positive power supply +V.

[0034] Preferably, the magnetic component 13 includes a mounting sub-component 131 and multiple magnetic sub-components 132. The mounting sub-component 131 includes a longitudinally arranged connecting portion 1311 and a vertically arranged mounting portion 1312. The outer end of the connecting portion 1311 passes through the middle plate 111 and is connected to the negative power supply -V. The inner end of the connecting portion 1311 is connected to the middle of the mounting portion 1312. The multiple magnetic sub-components 132 are arranged vertically on the inner side of the mounting portion 1312. Preferably, there are three magnetic sub-components 132. They are vertically spaced apart on the inner side of the mounting portion 1312.

[0035] Preferably, the sputtering assembly 1 is symmetrically arranged about the longitudinal axis of the connecting portion 1311. This ensures the uniformity of the sputtering ion distribution, thereby improving the uniformity of the coating.

[0036] Preferably, the sputtering cooling element 14 is disposed between the magnetic sub-assembly 132 and the target 15. A cooling groove 141 is provided on one side of the sputtering cooling element 14 adjacent to the target 15. The cooling groove 141 is used to admit a coolant. The coolant may be water, an ethylene glycol aqueous solution, mineral oil, a fluorinated liquid, or the like, with water being preferred. When the coolant flows into the cooling groove 141, it simultaneously contacts the sputtering cooling element 14 and the target 15, thereby reducing the temperature of the target 15.

[0037] Preferably, the target 15 is located at the outermost side of the anode member 11 . The material of the target 15 can be selected according to different coating requirements, and may be aluminum, copper, stainless steel, titanium, nickel, etc.

[0038] Preferably, the bias assembly 2 is parallel to the substrate 3, and the target 15 is perpendicular to the bias assembly 2 and the substrate 3. Thus, the bias assembly 2 enables the sputtered ions bombarded by the two oppositely disposed targets 15 to be evenly plated onto the substrate 3, thereby improving the uniformity of the coating.

[0039] Preferably, the bias assembly 2 includes a bias member 21, a bias insulating plate 22, and a bias fixing plate 23. The bias member 21 is spaced apart from the sputtering assembly 1. The bias member 21 is mounted on the bias insulating plate 22 and connected to a positive power supply +V. The bias fixing plate 23 is mounted on the bias insulating plate 22 and grounded. This allows the bias assembly 2 to have an independent positive power supply +V, thereby repelling sputtered ions from the substrate 3 and attracting electrons to the bias assembly 2.

[0040] Preferably, the bias member 21 includes a first bias portion 211 and a second bias portion 212. The first bias portion 211 is adjacent to the sputtering assembly 1 and is perpendicular to the target material 15. The second bias portion 212 is located in the middle of the first bias portion 211, passes through the bias insulating plate 22 and the bias fixing plate 23, and extends away from the sputtering assembly 1, parallel to the target material 15.

[0041] Preferably, the magnetron sputtering device is symmetrically arranged about the vertical axis of the second bias unit 212. This ensures the uniformity of the sputtering ion distribution, thereby improving the uniformity of the coating.

[0042] Preferably, the first biasing member 211 is provided with a cooling hole 213 for admitting a coolant. The coolant may be water, an ethylene glycol aqueous solution, mineral oil, a fluorinated liquid, or the like, with water being preferred. The coolant flowing into the cooling hole 213 serves to reduce the temperature of the biasing member 21.

[0043] In summary, in the present invention, when the sputtering assembly is sputtering, it will have sputtering ions, sputtering molecular clusters and electrons at the same time. The relatively arranged sputtering assemblies sputter the sputtering ions, sputtering molecular clusters and electrons they generate to the middle area, the bias assembly repels the sputtering ions onto the substrate, attracts the electrons to the bias assembly, and the sputtering molecular clusters remain in the area between the two sputtering assemblies. In this way, only the sputtering ions can be bombarded onto the substrate, while the sputtering molecular clusters and electrons can be prevented from bombarding the substrate, thereby ensuring the uniformity of the coating, improving the quality of the coating, and reducing the temperature increase of the substrate. At the same time, the target material and the bias member are cooled by the coolant to prevent the temperature of the target material and the bias member from being too high.

[0044] The above are merely embodiments of the present invention and are not intended to limit the patent scope of the present invention. Any equivalent structural transformations made using the contents of the present invention's description and drawings, or directly or indirectly applied to other related technical fields, are also included in the patent protection scope of the present invention.

Claims

1. A magnetron sputtering device, characterized in that: The device comprises a sputtering assembly and a bias assembly, which are arranged in a housing; two sputtering assemblies are provided, the two sputtering assemblies are arranged opposite to each other, and the bias assembly is arranged on one side of the two sputtering assemblies; the sputtering assembly is connected to a negative power supply, the bias assembly is connected to a positive power supply, and the bias assembly is used to repel sputtering ions generated by the sputtering assembly onto a substrate; The sputtering assembly includes an anode component, a sputtering insulating component, a magnetic component and a target material, wherein the anode component is arranged around the sputtering insulating component, the magnetic component and the target material, and the sputtering insulating component, the magnetic component and the target material are arranged in sequence from the outside to the inside of the anode component, the magnetic component is connected to a negative power supply, and the anode component is connected to a positive power supply; The bias assembly is parallel to the substrate, and the target is perpendicular to the bias assembly and the substrate.

2. The magnetron sputtering device according to claim 1, characterized in that The sputtering assembly further includes a sputtering cooling member, which is disposed between the magnetic member and the target material and is used to reduce the temperature of the target material.

3. The magnetron sputtering device according to claim 1, characterized in that The bias assembly includes a biasing member, and the biasing member is spaced apart from the sputtering assembly.

4. The magnetron sputtering device according to claim 3, characterized in that The bias assembly further includes a bias insulating plate and a bias fixing plate. The bias member is arranged on the bias insulating plate. The bias insulating plate is arranged on the bias fixing plate. The bias fixing plate is grounded.

5. The magnetron sputtering device according to claim 1, characterized in that The magnetic component includes a mounting sub-component and multiple magnetic sub-components. The mounting sub-component includes a longitudinally arranged connecting portion and a vertically arranged mounting portion. The outer end of the connecting portion passes through the anode component and is connected to the negative power supply. The inner end of the connecting portion is connected to the middle of the mounting portion. Multiple magnetic sub-components are vertically arranged on the inner side surface of the mounting portion.

6. The magnetron sputtering device according to claim 2, characterized in that A cooling groove is provided on one side of the sputtering cooling member adjacent to the target material, and the cooling groove is used for passing a cooling liquid.

7. The magnetron sputtering device according to claim 4, characterized in that The bias member includes a first bias portion and a second bias portion. The first bias portion is adjacent to the sputtering assembly and perpendicular to the target material. The second bias portion is located in the middle of the first bias portion, passes through the bias insulating plate and the bias fixing plate, extends away from the sputtering assembly, and is parallel to the target material.

8. The magnetron sputtering device according to claim 7, characterized in that The first biasing portion is provided with a cooling hole, and the cooling hole is used for letting in cooling liquid.

Images