Magnetron sputtering device
By adjusting the distance between the magnet assembly and the target and changing the magnetization direction of the magnet block, the problem of low target utilization in magnetron sputtering devices is solved, the service life of the target is extended, and the cost is reduced.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SUZHOU MAXWELL TECH CO LTD
- Filing Date
- 2023-07-17
- Publication Date
- 2026-05-12
AI Technical Summary
The low utilization rate of targets in magnetron sputtering equipment leads to waste and increased costs, mainly because the etching rate at the tip of the magnet rod is higher than that in the middle, forming a 'V'-shaped etching groove that causes the target to be scrapped prematurely.
The distance between the magnet assembly and the target is adjusted by using an adjustment component, and the magnetization direction of the magnet block is changed, which changes the distribution of magnetic lines of force and tilts the etching direction at the end of the target, thus extending the service life of the target.
By changing the magnetization direction of the magnet, the etching amount at the end of the target is dispersed to adjacent positions, extending the service life of the target, improving utilization, and saving costs.
Smart Images
Figure CN116837337B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of sputtering coating technology, and more particularly to a magnetron sputtering device. Background Technology
[0002] Currently, in the magnetron sputtering apparatus, the magnetic poles of the central magnet of the magnet rod face upwards (N / S side), while the magnetic poles of the outer magnets face upwards (S / N side). All magnets are magnetized vertically upwards or downwards. During actual operation, the target material in the magnetron sputtering apparatus rotates continuously. During this rotation, if… Figure 1 As shown, due to the presence of the "U-shaped etching raceway 330" at the end of the magnetic rod, the axial etching component at the end of the "U-shaped etching raceway 330" ( Figure 1 The direction indicated by arrow A in the middle is significantly greater than the etching component in the middle. Figure 1 As indicated by arrow B in the diagram, the axial etching rate at the tip of the magnetic rod is greater than that in the middle, resulting in deep etching points at the end of the etching track. As the target material is consumed, the surface of the target material is closer to the magnetic rod, and the magnetic field strength is stronger, which intensifies the etching at the tip of the magnetic rod, eventually forming a "V"-shaped etching groove. When the "V"-shaped etching groove is etched through, the lifespan of the target material expires and it can no longer be used. However, a relatively thick portion of the target material remains in the middle area, resulting in low target material utilization, wasted target material, and increased costs.
[0003] Therefore, there is an urgent need to design a magnetron sputtering device to solve the above technical problems. Summary of the Invention
[0004] The purpose of this invention is to provide a magnetron sputtering device that can improve the utilization rate of the target material and save costs.
[0005] To achieve this objective, the present invention adopts the following technical solution: The present invention provides a magnetron sputtering apparatus, comprising:
[0006] Support base, on which an adjustment component is provided;
[0007] A magnet assembly, comprising a magnetic yoke, a first type of magnet block, a second type of magnet block, and a third type of magnet block, wherein an adjustment component is connected to the magnetic yoke and is configured to adjust the distance between the magnet assembly and the target material;
[0008] The first type of magnet block, the second type of magnet block, and the third type of magnet block are all disposed on the magnetic yoke. Along the first direction, the first type of magnet block is located at both ends of the magnetic yoke, the third type of magnet block is located at the middle of the magnetic yoke, and the second type of magnet block is located between the first type of magnet block and the third type of magnet block.
[0009] The magnetization direction of the first type of magnet is inclined downwards towards the middle of the magnetic yoke, while the magnetization direction of the third type of magnet is vertically upwards; or,
[0010] The magnetization direction of the first type of magnet is inclined upwards towards the center position away from the magnetic yoke, while the magnetization direction of the third type of magnet is vertically downwards.
[0011] As an optional technical solution for a magnetron sputtering device, when the magnetization direction of the first type of magnet block is inclined downward toward the center of the magnetic yoke, the magnetization direction of the second type of magnet block is inclined upward toward the center of the magnetic yoke; when the magnetization direction of the first type of magnet block is inclined upward toward a position away from the center of the magnetic yoke, the magnetization direction of the second type of magnet block is inclined downward toward a position away from the center of the magnetic yoke.
[0012] As an optional technical solution for a magnetron sputtering device, a plurality of the first type of magnet blocks are provided, and the plurality of the first type of magnet blocks are respectively located at both ends of the magnetic yoke.
[0013] As an optional technical solution for a magnetron sputtering device, multiple second-type magnet blocks are configured, and along the direction near the center of the magnetic yoke, the magnetization direction of the multiple second-type magnet blocks transitions from obliquely upward / downward to vertical.
[0014] As an optional technical solution for a magnetron sputtering device, the magnetization direction of multiple second-type magnet blocks gradually decreases from an upward / downward tilt towards a vertical tilt.
[0015] As an optional technical solution for a magnetron sputtering apparatus, multiple third-type magnet blocks are provided, all located at the center of the magnetic yoke. As another optional technical solution for a magnetron sputtering apparatus, a preset distance is provided between the first-type and second-type magnet blocks, the preset distance being between 5mm and 30mm.
[0016] As an optional technical solution for a magnetron sputtering device, the support base is provided with a flow channel, which is connected to a cooling water source.
[0017] As an optional technical solution for a magnetron sputtering device, the support base is provided with a water inlet and a water outlet at both ends. Both the water inlet and the water outlet are connected to the flow channel and are connected to the cooling water source.
[0018] As an optional technical solution for a magnetron sputtering device, the adjustment component is configured as a bolt, and the adjustment component is threadedly connected to the support base.
[0019] The beneficial effects of the present invention at least include:
[0020] The present invention provides a magnetron sputtering device, which includes a support base and a magnet component. Among them, an adjustment component is arranged on the support base. The magnet component includes a magnetic yoke, a first type of magnet block, a second type of magnet block, and a third type of magnet block. The adjustment component is connected to the magnetic yoke and is configured to adjust the distance between the magnet component and the target. The first type of magnet block, the second type of magnet block, and the third type of magnet block are all arranged on the magnetic yoke. Along the first direction, the first type of magnet block is located at both ends of the magnetic yoke, the third type of magnet block is located at the middle position of the magnetic yoke, and the second type of magnet block is located between the first type of magnet block and the third type of magnet block; by changing the magnetization directions of the first type of magnet block and the second type of magnet block, the magnetic field line distribution at both ends of the magnet component is changed. Furthermore, it can be seen from the magnetic field lines on the surface of the target that the simulated contour lines (etching direction) have changed compared with the prior art, that is, as the thickness of the target surface gradually decreases, the etching direction has changed. Specifically, the etching direction at the end face and inside of the target has changed from being nearly perpendicular to the surface of the target in the prior art to being inclined towards the end of the target. In this way, as the target is used, the etching grooves at the end of the target will be inclined towards the end of the target. That is to say, the etching amount at a fixed position on the target in the prior art is dispersed to adjacent positions as the target is continuously etched, thereby increasing the etching amount at the end of the target, making the time when the end of the target is etched through later, increasing the etching amount of the middle target, prolonging the overall service time and utilization rate of the target, extending the service life, and saving costs. BRIEF DESCRIPTION OF THE DRAWINGS
[0021] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following will briefly introduce the drawings required for the description of the embodiments of the present invention. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained according to the content of the embodiments of the present invention and these drawings.
[0022] Figure 1 Schematic diagram of the U-shaped etching track on the target surface of the prior art;
[0023] Figure 2 Schematic diagram of the structure of the magnetron sputtering device provided in the first embodiment of the present invention;
[0024] Figure 3 Simulation diagram of the magnetic field of the magnet component and the etching morphology of the target provided in the first embodiment of the present invention;
[0025] Figure 4 Top view of the magnet component provided in the first embodiment of the present invention;
[0026] Figure 5 This is a cross-sectional view of the CC section of the magnet assembly provided in Embodiment 1 of the present invention;
[0027] Figure 6 This is a cross-sectional view of the CC section of a magnet assembly provided in another embodiment of the present invention;
[0028] Figure 7 This is a comparison chart of the target material (residual target) after etching by the magnetron sputtering device provided in Embodiment 1 of the present invention and the target material (residual target) after etching by the magnetron sputtering device in the prior art.
[0029] Figure 8 This is a schematic diagram showing the magnetization direction of the magnet assembly provided in Embodiment 2 of the present invention;
[0030] Figure 9 This is a cross-sectional view of the magnet assembly DD provided in Embodiment 2 of the present invention;
[0031] Figure 10 This is a cross-sectional view of the magnet assembly DD provided in another embodiment of the present invention.
[0032] Figure Labels
[0033] 10. Magnet blank;
[0034] 100. Support base; 110. Adjustment component; 120. Flow channel; 130. Inlet; 140. Outlet;
[0035] 200. Magnetic assembly; 210. Type I magnetic block; 220. Type II magnetic block; 230. Type III magnetic block; 240. Magnetic yoke;
[0036] 300, target material; 310, magnetic field lines; 320, simulated contour lines; 330, U-shaped etched runway. Detailed Implementation
[0037] To make the technical problems solved by the present invention, the technical solutions adopted, and the technical effects achieved clearer, the technical solutions of the present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.
[0038] In the description of this invention, unless otherwise explicitly specified and limited, the terms "connected," "linked," and "fixed" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.
[0039] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.
[0040] In the description of this embodiment, the terms "upper," "lower," "left," and "right," etc., refer to the orientation or positional relationship shown in the accompanying drawings. They are used only for ease of description and simplification of operation, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the present invention. In addition, the terms "first" and "second" are used only for distinction in description and have no special meaning.
[0041] Example 1
[0042] like Figures 2-6 As shown, this embodiment provides a magnetron sputtering apparatus, which mainly includes a support base 100 and a magnet assembly 200. An adjustment component 110 is provided on the support base 100. The magnet assembly 200 includes a magnetic yoke 240, a first type of magnet block 210, a second type of magnet block 220, and a third type of magnet block 230. The adjustment component 110 is connected to the magnetic yoke 240 and is configured to adjust the distance between the magnet assembly 200 and the target material 300. The first type of magnet 210, the second type of magnet 220, and the third type of magnet 230 are all disposed on the magnetic yoke 240. Along the first direction, the first type of magnet 210 is located at both ends of the magnetic yoke 240, the third type of magnet 230 is located at the middle of the magnetic yoke 240, and the second type of magnet 220 is located between the first type of magnet 210 and the third type of magnet 230. The magnetization direction of the first type of magnet 210 is inclined downward toward the middle of the magnetic yoke 240 and forms an angle α with the vertical direction. The magnetization direction of the second type of magnet 220 is inclined upward toward the middle of the magnetic yoke 240 and forms an angle β with the vertical direction.
[0043] Specifically, in this embodiment, the magnetization direction of the first type of magnet block 210 is inclined downward at an angle α toward the middle position of the magnetic yoke 240, such as... Figure 3As shown, the tilt angle α is the angle between the magnetization direction of the first type of magnet block 210 and the vertical direction. For example, the tilt angle α can be set to 30°, 45°, 60°, etc.; the magnetization direction of the second type of magnet block 220 is tilted upwards at an angle β towards the middle position of the magnetic yoke 240. Figure 3 As shown, the tilt angle β is the angle between the magnetization direction of the second type of magnet 220 and the vertical direction. For example, this tilt angle β can be set to 30°, 45°, 60°, etc.; the magnetization direction of the third type of magnet 230 is vertically upward. It should be noted that the first direction in this embodiment is... Figure 2 The X-axis direction in the diagram.
[0044] Based on the above design, the magnetron sputtering device in this embodiment typically acts as the cathode to etch the target 300. The magnetic yoke 240, being a soft iron with high magnetic permeability, has excellent magnetic conductivity, capable of conducting and confining magnetic field lines 310. Furthermore, the magnetic yoke 240 can be bent and deformed, allowing adjustment of the distance between the magnet assembly 200 and the target 300 via the adjustment component 110, thereby adjusting the strength of the magnetic field. This enhances the flexibility and applicability of the magnetron sputtering device. Optionally, the adjustment component 110 is configured as a bolt, threadedly connected to the support base 100. Operators can adjust the magnetic yoke 240 by tightening the bolt, thereby changing the distance between the magnets on the yoke 240 and the target 300, and thus adjusting the strength of the magnetic field.
[0045] In this embodiment, the target 300 in the magnetron sputtering apparatus is disposed around the magnet assembly 200, and the target 300 is rotatable relative to the magnet assembly 200. Optionally, the target 300 is sleeve-shaped, with the magnet assembly 200 passing through the sleeve, and the sputtering deposition process occurs on one side of the target 300. It should be noted that... Figure 3 The image only shows the relative positions of the magnet assembly 200 and the target material 300.
[0046] Figure 3 and Figure 5 The direction indicated by the arrows is the magnetization direction of the first type of magnet 210, the second type of magnet 220, and the third type of magnet 230.
[0047] For example, multiple first-type magnet blocks 210 are provided, symmetrically arranged at both ends of the magnetic yoke 240. It should be noted that in actual operation, usually two first-type magnet blocks 210 are provided, with each block located at one end of the magnetic yoke 240, and the magnetization direction of both blocks inclined downwards towards the center of the yoke 240. Optionally, the first-type magnet blocks 210 and... Figure 4The black areas in the middle are all set as the S-face of the magnetic pole, and the second type of magnet block 220 and the third type of magnet block 230 in the middle area are both set as the N-face of the magnetic pole. For example, two second type of magnet blocks 220 are also provided, and the magnetization direction of both second type of magnet blocks 220 is inclined upwards towards the middle position of the magnetic yoke 240. Of course, multiple second type of magnet blocks 220 near the end of the magnetic yoke 240 can also be provided, and the magnetization direction of the multiple second type of magnet blocks 220 is the same. For example, multiple third type of magnet blocks 230 are provided, and the multiple third type of magnet blocks 230 are all located at the middle position of the magnetic yoke 240, and also between the second type of magnet blocks 220 at both ends. For example, ten third type of magnet blocks 230 are provided, and the ten third type of magnet blocks 230 are arranged side by side in sequence, and the magnetization direction of the ten third type of magnet blocks 230 is vertically upwards. Optionally, the second type of magnet block 220, the third type of magnet block 230 and... Figure 4 The shaded areas in the diagram are all set to the N-side of the magnetic pole.
[0048] Furthermore, in another embodiment, the first type of magnet block 210 and Figure 4 The black areas in the middle are all set as the N-side of the magnetic poles, while the second-type magnet block 220 and the third-type magnet block 230 in the middle area are both set as the S-side of the magnetic poles. Furthermore, the magnetization direction of the first-type magnet block 210, the second-type magnet block 220, and the third-type magnet block 230 can all be adjusted accordingly, such as... Figure 6 As shown, the magnetization direction of the first type of magnet 210 is inclined upwards towards the middle position away from the magnetic yoke 240, while the magnetization direction of the third type of magnet 230 is vertically downwards. In this embodiment, the magnetization direction of the second type of magnet 220 is inclined downwards towards the middle position away from the magnetic yoke 240.
[0049] Compared with the prior art, the above embodiment changes the magnetization direction of the first type of magnet block 210 and the second type of magnet block 220, thereby changing the distribution of magnetic field lines 310 at the two ends of the magnet assembly 200. As a result, the simulated contour lines 320 (etching direction) on the surface of the target 300 can be seen to have changed relative to the etching direction of the magnetic rod in the prior art. That is, the etching direction of the end face and interior of the target 300 is changed from the direction that is almost perpendicular to the surface of the target 300 in the prior art to the direction that is inclined towards the end of the target 300. In this way, as the target 300 is used, the etching grooves at the end of the target 300 will tilt towards the end of the target 300. In other words, the amount of etching at a fixed position on the target 300 in the prior art is dispersed to adjacent positions as the target 300 is continuously etched, thereby delaying the time when the end of the target 300 is etched through, extending the overall service life and utilization rate of the target 300, extending its service life, and saving costs.
[0050] Compared to conventional magnetron sputtering devices, where a 9mm thick target 300 will be etched through after vertically etching downwards for 9mm, the magnetron sputtering device in this embodiment uses a tilted etching direction at the end of the target 300, resulting in a greater amount of target 300 used in the etching direction. Under the same etching rate, the target 300 in other areas can also be fully utilized, effectively improving the utilization rate of the target 300 and saving costs.
[0051] It should be emphasized that the magnetization direction of the first type of magnet block 210, the second type of magnet block 220 and the third type of magnet block 230 in this embodiment is fixed during the manufacturing process of the first type of magnet block 210, the second type of magnet block 220 and the third type of magnet block 230. In other words, the magnetization direction of the first type of magnet block 210, the second type of magnet block 220 and the third type of magnet block 230 is determined during the production process.
[0052] For example, the magnet blank 10 of the first type of magnet block 210 is magnetized from top to bottom. When processing the first type of magnet block 210, the operator can cut from the magnet blank 10 according to actual needs, thereby cutting out the first type of magnet block 210 with a specified magnetization direction. Similarly, the second type of magnet block 220 and the third type of magnet block 230 are also made in the same way. It should be noted that the above processing technology is a conventional process in the art, and will not be described in detail here.
[0053] like Figure 7 The figure shows a comparison between the curves of the target 300 (residual target) etched using the magnetron sputtering device in this embodiment and the curves of the target 300 (residual target) etched using a magnetron sputtering device in the prior art. The horizontal axis is marked as 0 from one end of the target 300, and tests are performed every 20 mm. Both the horizontal and vertical axes are in mm. When the target is etched through, the smaller the overall outer diameter of the residual target, the less unused target material 300 remains. This indicates a higher utilization rate of the target 300, a longer time for the etched grooves to be penetrated, and thus a longer lifespan for the target 300. Figure 7 It can be concluded that after the target is etched through, the thickness of the residual target in the middle of the target in this embodiment is much smaller than that in the prior art. Therefore, the target utilization rate is much higher than that in the prior art.
[0054] like Figure 2As shown, in this embodiment, a flow channel 120 is provided on the support base 100, and the flow channel 120 is connected to a cooling water source. Specifically, the support base 100 has an inlet 130 and an outlet 140 at both ends, both of which are connected to the flow channel 120 and the cooling water source. For example, the cooling water source can be an external cooling water tank containing cooling water, and the cooling water tank is connected to a water pump, thereby cooling the target 300 in the magnetron sputtering device and improving the service life of the target 300.
[0055] In addition, such as Figure 3 As shown, in this embodiment, a preset distance is set between the first type of magnet block 210 and the second type of magnet block 220. The preset distance is between 5mm and 30mm, and can be set to values such as 5mm, 10mm, 15mm, 20mm, and 30mm. Setting the preset distance enables the magnetic field of the magnet assembly 200 to be closed and continuous, thereby improving the yield of the etching target 300 of the magnetron sputtering device.
[0056] Example 2
[0057] like Figures 8-10 As shown, the main difference between the magnetron sputtering device provided in this embodiment and that in Embodiment 1 is that: in this embodiment, multiple second-type magnet blocks 220 are provided, and along the direction near the middle position of the magnetic yoke 240, the magnetization direction of the second-type magnet blocks 220 transitions from an upward slant towards a vertical direction. Optionally, six second-type magnet blocks 220 are provided, with three second-type magnet blocks 220 located at one end of the third-type magnet block 230 and the remaining three second-type magnet blocks 220 located at the other end of the third-type magnet block 230. Along the first direction, the magnetization direction of the three second-type magnet blocks 220 located at one end of the third-type magnet block 230 transitions from an upward slant towards a vertical direction. Exemplarily, along the direction from the end to the middle of the magnet assembly, the angles between the magnetization direction of the three second-type magnet blocks 220 and the vertical direction are 60°, 45°, and 30° respectively. Similarly, along the direction from the end to the middle of the magnet assembly, the angles between the magnetization direction of the three second-type magnet blocks 220 located at the other end of the third-type magnet block 230 and the vertical direction are successively set to 60°, 45°, and 30°. It should be noted that the 60°, 45°, and 30° mentioned above refer to the angles perpendicular to the magnetic yoke 240. Of course, the magnetization direction of the second-type magnet blocks 220 can also be set to other progressive angles, which will not be elaborated here. By progressively transitioning the magnetization direction of the second-type magnet blocks 220 from an upward tilt to a vertical direction, the magnetic field of the magnet assembly 200 transitions more smoothly from both ends to the middle, improving the flexibility and applicability of the magnetron sputtering device.
[0058] The remaining structures of the magnetron sputtering device in this embodiment are the same as those in Embodiment 1, and will not be described in detail here.
[0059] Obviously, the above description is merely a preferred embodiment of the present invention and the technical principles employed. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and various obvious changes, readjustments, and substitutions can be made without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in detail through the above embodiments, the present invention is not limited to the above embodiments, and may include many other equivalent embodiments without departing from the concept of the present invention, the scope of which is determined by the scope of the appended claims.
[0060] Note that in the description of this specification, the references to terms such as "some embodiments," "other embodiments," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.
Claims
1. A magnetron sputtering apparatus, characterized in that, include: A support base (100) is provided with an adjustment component (110). A magnet assembly (200) includes a yoke (240), a first type of magnet block (210), a second type of magnet block (220), and a third type of magnet block (230). An adjustment assembly (110) is connected to the yoke (240) and is configured to adjust the distance between the magnet assembly (200) and the target material (300). The first type of magnet block (210), the second type of magnet block (220) and the third type of magnet block (230) are all disposed on the magnetic yoke (240). Along the first direction, the first type of magnet block (210) is located at both ends of the magnetic yoke (240), the third type of magnet block (230) is located at the middle of the magnetic yoke (240), and the second type of magnet block (220) is located between the first type of magnet block (210) and the third type of magnet block (230). The magnetization direction of the first type of magnet (210) is inclined downward toward the middle position of the magnetic yoke (240), and the magnetization direction of the third type of magnet (230) is vertically upward; or, The magnetization direction of the first type of magnet (210) is inclined upward towards the center position away from the magnetic yoke (240), and the magnetization direction of the third type of magnet (230) is vertically downward. When the magnetization direction of the first type of magnet block (210) is inclined downward toward the middle position of the magnetic yoke (240), the magnetization direction of the second type of magnet block (220) is inclined upward toward the middle position of the magnetic yoke (240). When the magnetization direction of the first type of magnet block (210) is inclined upward toward the center position away from the magnetic yoke (240), the magnetization direction of the second type of magnet block (220) is inclined downward toward the center position away from the magnetic yoke (240).
2. The magnetron sputtering apparatus according to claim 1, characterized in that, The first type of magnet block (210) is configured as a plurality of such magnet blocks (210), and the plurality of the first type of magnet blocks (210) are respectively located at both ends of the magnetic yoke (240).
3. The magnetron sputtering apparatus according to claim 2, characterized in that, The second type of magnet (220) is configured as a plurality of them, and along the direction near the middle position of the magnetic yoke (240), the magnetization direction of the plurality of second type of magnet (220) transitions from obliquely upward or obliquely downward towards the vertical direction.
4. The magnetron sputtering apparatus according to claim 1, characterized in that, The third type of magnet block (230) is configured as a plurality of such blocks, and the plurality of the third type of magnet blocks (230) are all located at the middle position of the magnetic yoke (240).
5. The magnetron sputtering apparatus according to claim 1, characterized in that, A preset distance is set between the first type of magnet block (210) and the second type of magnet block (220), and the preset distance is between 5mm and 30mm.
6. The magnetron sputtering apparatus according to any one of claims 1-5, characterized in that, The support base (100) is provided with a flow channel (120), which is connected to a cooling water source.
7. The magnetron sputtering apparatus according to claim 6, characterized in that, The support base (100) is provided with an inlet (130) and an outlet (140) at both ends. The inlet (130) and the outlet (140) are both connected to the flow channel (120), and the inlet (130) and the outlet (140) are both connected to the cooling water source.
8. The magnetron sputtering apparatus according to claim 1, characterized in that, The adjusting component (110) is configured as a bolt, and the adjusting component (110) is threadedly connected to the support base (100).