A semiconductor laser device provided with a self-trapped exciton layer

Abstract

The present invention provides a semiconductor laser device provided with a self-trapped exciton layer, which relates to the technical field of semiconductor optoelectronic devices. From bottom to top, it sequentially includes a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper confinement layer. A self-trapped exciton layer is provided between the active layer and the lower waveguide layer and between the lower waveguide layer and the lower confinement layer. The self-trapped exciton layer has a topological monoclinic phase periodic ferroelectric domain, forming a strong out-of-plane spontaneous polarization to induce self-trapped excitons, increasing the free exciton binding energy from below 10 meV to above 20 meV, reducing the temperature threshold of the exciton radiation of the laser, enabling exciton optical radiation at room temperature or higher temperatures. At the same time, it enhances the exciton-assisted stimulated emission of the laser device, reduces the polarization effect of the active layer, reduces the quantum-confined Stark effect, reduces the excitation threshold of the laser device, improves the continuous oscillation at room temperature, enhances the confinement factor and gain uniformity, and improves the optical power and slope efficiency of the laser device.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor optoelectronic devices, and more particularly, to a semiconductor laser element provided with a self-trapped exciton layer. Background Art

[0002] Lasers are widely used in the fields of laser display, laser TV, laser projector, communication, medical treatment, weapons, guidance, ranging, spectral analysis, cutting, precision welding, high-density optical storage, etc. There are many types of lasers, and the classification methods are also diverse. The main types include solid-state, gas, liquid, semiconductor, and dye lasers; compared with other types of lasers, all-solid-state semiconductor lasers have the advantages of small size, high efficiency, light weight, good stability, long life, simple and compact structure, and miniaturization. There are significant differences between lasers and nitride semiconductor light-emitting diodes. 1) When light resonates with two-level atoms in the gain medium, there are three processes: absorption, spontaneous emission, and stimulated emission; the phase of spontaneous emission is chaotic and irregular, the spontaneous transition is random, the spontaneous emission deviating from the axis escapes from the cavity, and photons with specific frequencies, specific directions, and transverse distributions along the axis cause avalanche-like stimulated amplification to generate laser light. Laser light is generated by the stimulated emission of carriers, and it must satisfy that the stimulated emission is greater than the absorption, achieve population inversion, the gain is greater than the loss, and realize the amplification of light; the full width at half maximum of the laser spectrum is small, the monochromaticity and directivity are very good, the brightness is very high, the output power of a single laser can be in the order of watts, while the nitride semiconductor light-emitting diode is spontaneous emission, and does not require the conditions of population inversion and stimulated emission being greater than absorption; the spectrum of the light-emitting diode is wide, without monochromaticity, and the output power of a single light-emitting diode is in the order of milliwatts. 2) The operating current density of the laser reaches kA / cm², which is more than two orders of magnitude higher than that of the nitride light-emitting diode, resulting in stronger electron leakage, more severe Auger recombination, stronger polarization effects, and more serious electron-hole mismatch, leading to a more serious efficiency droop effect. 3) The light-emitting diode undergoes spontaneous transition radiation, which is incoherent light that transitions from a high energy level to a low energy level without external influence, while the laser is stimulated transition radiation, and the energy of the induced photon should be equal to the energy difference between the electron transitions, generating completely identical coherent light of the photon and the induced photon, with strong high coherence. 4) The principles are different: the light-emitting diode undergoes radiative recombination and emits light when electrons and holes transition to the quantum well or p-n junction under the action of an external voltage, while the laser requires the lasing conditions to be met before it can lase. It must satisfy the inverted distribution of carriers in the active region, the stimulated emission light oscillates back and forth in the resonant cavity, the propagation in the gain medium amplifies the light, satisfies the threshold condition that the gain is greater than the loss, and finally outputs laser light. The nitride semiconductor laser has the following problems: 1) The large lattice mismatch and strain inside cause strong polarization effects, and the strong quantum-confined Stark effect (QCSE) severely limits the improvement of the electrical lasing gain of the laser. 2) The Mg acceptor in the p-type semiconductor has a large activation energy and low ionization efficiency. The hole concentration is much lower than the electron concentration, and the hole mobility is much smaller than the electron mobility, resulting in a serious asymmetry and mismatch of electrons and holes in the quantum well, electron leakage and carrier delocalization, making it more difficult for holes to transport in the quantum well, uneven carrier injection, uneven gain, broadening of the laser gain spectrum, and a decrease in the peak gain.3) The valence band offset of the laser increases, making it more difficult for holes to transport in the quantum well, resulting in uneven carrier injection and uneven gain. Summary of the Invention

[0003] The object of the present invention is to provide a semiconductor laser device provided with a self-trapped exciton layer, which solves the problems existing in the prior art.

[0004] A semiconductor laser device provided with a self-trapped exciton layer includes, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper confinement layer. A self-trapped exciton layer is provided between the active layer and the lower waveguide layer and between the lower confinement layer and the lower waveguide layer.

[0005] As a preferred technical solution of the present invention, the self-trapped exciton layer is NbO 2 , Sb 2 Te 3 , KNbO 3 , Bi 2 O 2 Se, Ag 2 SFe 2 O 8 , Ag 8 GeS 6 Any one or any combination thereof.

[0006] As a preferred technical solution of the present invention, any combination of the self-trapped exciton layers includes the following binary combination of heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots, and two-dimensional Moiré superlattice structures: NbO 2 / Sb 2 Te 3 , NbO 2 / KNbO 3 , NbO 2 / Bi 2 O 2 Se, NbO 2 / Ag 2 SFe 2 O 8 , NbO 2 / Ag 8 GeS 6 , Sb 2 Te 3 / KNbO 3 , Sb 2 Te 3 / Bi 2 O 2 Se,Sb 2 Te 3 / Ag 2 SFe 2 O8 , Sb 2 Te 3 / Ag 8 GeS 6 , KNbO 3 / Bi 2 O 2 Se, KNbO 3 / Ag 2 SFe 2 O 8 , KNbO 3 / Ag 8 GeS 6 ,Bi 2 O 2 Se / Ag 2 SFe 2 O 8 , Bi 2 O 2 Se / Ag 8 GeS 6 , Ag 2 SFe 2 O 8 / Ag 8 GeS 6 。

[0007] As a preferred technical solution of the present invention, any combination of the self-trapped exciton layers includes the following ternary combination of heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots, two-dimensional Moiré superlattice structures: NbO 2 / Sb 2 Te 3 / KNbO 3 ,NbO 2 / Sb 2 Te 3 / Bi 2 O 2 Se, NbO 2 / Sb 2 Te 3 / Ag 2 SFe 2 O 8 , NbO 2 / Sb 2 Te 3 / Ag 8 GeS 6 , NbO 2 / KNbO 3 / Bi 2 O 2 Se,NbO 2 / KNbO 3 / Ag 2 SFe2 O 8 , NbO 2 / KNbO 3 / Ag 8 GeS 6 , NbO 2 / Bi 2 O 2 Se / Ag 2 SFe 2 O 8 , NbO 2 / Bi 2 O 2 Se / Ag 8 GeS 6 , NbO 2 / Ag 2 SFe 2 O 8 / Ag 8 GeS 6 , Sb 2 Te 3 / KNbO 3 / Bi 2 O 2 Se, Sb 2 Te 3 / KNbO 3 / Ag 2 SFe 2 O 8 ,Sb 2 Te 3 / KNbO 3 / Ag 8 GeS 6 , Sb 2 Te 3 / Bi 2 O 2 Se / Ag 2 SFe 2 O 8 , Sb 2 Te 3 / Bi 2 O 2 Se / Ag 8 GeS 6 , Sb 2 Te 3 / Ag 2 SFe 2 O 8 / Ag 8 GeS 6 , KNbO 3 / Bi 2 O 2 Se / Ag2 SFe 2 O 8 , KNbO 3 / Bi 2 O 2 Se / Ag 8 GeS 6 , KNbO 3 / Ag 2 SFe 2 O 8 / Ag 8 GeS 6 , Bi 2 O 2 Se / Ag 2 SFe 2 O 8 / Ag 8 GeS 6 。

[0008] As a preferred technical solution of the present invention, any combination of the self-trapped exciton layers includes the following heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots, two-dimensional Moiré superlattice structures of a quaternary combination: NbO 2 / Sb 2 Te 3 / KNbO 3 / Bi 2 O 2 Se, NbO 2 / Sb 2 Te 3 / KNbO 3 / Ag 2 SFe 2 O 8 , NbO 2 / Sb 2 Te 3 / KNbO 3 / Ag 8 GeS 6 , NbO 2 / KNbO 3 / Bi 2 O 2 Se / Ag 2 SFe 2 O 8 , NbO 2 / KNbO 3 / Bi 2 O 2 Se / Ag 8 GeS 6 , NbO 2 / Bi 2 O 2Se / Ag 2 SFe 2 O 8 / Ag 8 GeS 6 ,Sb 2 Te 3 / KNbO 3 / Bi 2 O 2 Se / Ag 2 SFe 2 O 8 , Sb 2 Te 3 / KNbO 3 / Bi 2 O 2 Se / Ag 8 GeS 6 , Sb 2 Te 3 / Bi 2 O 2 Se / Ag 2 SFe 2 O 8 / Ag 8 GeS 6 , KNbO 3 / Bi 2 O 2 Se / Ag 2 SFe 2 O 8 / Ag 8 GeS 6 。

[0009] As a preferred technical solution of the present invention, any combination of the self-trapped exciton layers includes the following heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots, two-dimensional Moiré superlattice structures of five-element and six-element combinations: NbO 2 / Sb 2 Te 3 / KNbO 3 / Bi 2 O 2 Se / Ag 2 SFe 2 O 8 , NbO 2 / Sb 2 Te 3 / KNbO 3 / Bi 2 O 2 Se / Ag 8 GeS 6 , NbO 2 / Sb 2 Te3 / KNbO 3 / Ag 2 SFe 2 O 8 / Ag 8 GeS 6 , NbO 2 / Sb 2 Te 3 / Bi 2 O 2 Se / Ag 2 SFe 2 O 8 / Ag 8 GeS 6 , NbO 2 / KNbO 3 / Bi 2 O 2 Se / Ag 2 SFe 2 O 8 / Ag 8 GeS 6 , Sb 2 Te 3 / KNbO 3 / Bi 2 O 2 Se / Ag 2 SFe 2 O 8 / Ag 8 GeS 6 , NbO 2 / Sb 2 Te 3 / KNbO 3 / Bi 2 O 2 Se / Ag 2 SFe 2 O 8 / Ag 8 GeS 6 。

[0010] As a preferred technical solution of the present invention, a self-trapped exciton layer is provided between the active layer and the upper waveguide layer and between the active layer and the lower waveguide layer. The self-trapped exciton layer has topologically monoclinic periodic ferroelectric domains, forming strong out-of-plane spontaneous polarization to induce self-trapped excitons, enhancing exciton-assisted stimulated emission of the laser element, reducing the excitation threshold of the laser element, enhancing continuous oscillation at room temperature, enhancing the confinement factor, and enhancing the optical power and slope efficiency of the laser element.

[0011] As a preferred technical solution of the present invention, the thickness of the electron spin state regulation layer is 5 - 500 nm.

[0012] As a preferred technical solution of the present invention, the lower limiting layer is any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, with a thickness of 50-5000nm and a Si doping concentration of 1E18-1E20cm -3 .

[0013] As a preferred technical solution of the present invention, the lower waveguide layer and the upper waveguide layer are any one or any combination of GaN, InGaN, and AlInGaN, with a thickness of 50 to 1000 nm and a Si doping concentration of 1E16 to 5E19 cm -3 .

[0014] As a preferred technical solution of the present invention, the electron blocking layer and the upper limiting layer are any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 20 to 1000 nm and a Mg doping concentration of 1E18 to 1E20 cm -3 .

[0015] As a preferred technical solution of the present invention, the active layer is a periodic structure composed of a well layer and a barrier layer, the well layer is an InGaN well layer, the barrier layer is any one or any combination of GaN, AlInGaN, AlGaN, AlInN, and the period number of the active layer is m: 4≥m≥1.

[0016] As a preferred technical solution of the present invention, the substrate includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 and LiGaO 2 Any type of composite substrate.

[0017] Compared with the prior art, the present invention has the following beneficial effects:

[0018] In the scheme of the present invention:

[0019] Compared with the prior art, a self-trapped exciton layer is provided between the active layer and the lower waveguide layer and between the lower waveguide layer and the lower confinement layer. The self-trapped exciton layer has a topologically monoclinic-phase periodic ferroelectric domain, forming a strong out-of-plane spontaneous polarization to induce self-trapped excitons, increasing the bound energy of free excitons from below 10 meV to above 20 meV, reducing the temperature threshold of exciton radiation of the laser, enabling exciton optical radiation at room temperature or higher temperatures. At the same time, it enhances the exciton-assisted stimulated emission of the laser element, reduces the polarization effect of the active layer, reduces the quantum-confined Stark effect, improves the carrier localization and hole injection and transport efficiency, enhances the peak gain of the laser, reduces the excitation threshold of the laser element, improves the continuous oscillation at room temperature, enhances the confinement factor and gain uniformity, and improves the optical power and slope efficiency of the laser element. Brief Description of the Drawings

[0020] Figure 1 It is a schematic structural diagram of a semiconductor laser element provided with a self-trapped exciton layer according to the present invention.

[0021] Labels in the figure:

[0022] 100: Substrate; 101: Lower confinement layer; 102: Lower waveguide layer; 103: Active layer; 104: Upper waveguide layer, 105: Electron blocking layer, 106: Upper confinement layer, 107: Self-trapped exciton layer. Detailed Description of the Embodiments

[0023] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings. Obviously, the described embodiments are some, but not all, of the embodiments of the present invention.

[0024] Therefore, the following detailed description of the embodiments of the present invention is not intended to limit the scope of the claimed present invention, but merely represents some embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts fall within the scope of protection of the present invention.

[0025] It should be noted that, without conflict, the embodiments in the present invention and the features and technical solutions in the embodiments may be combined with each other.

[0026] Embodiment 1

[0027] Please refer to Figure 1, this embodiment provides a technical solution: a semiconductor laser element provided with a self-bound exciton layer, which sequentially includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106 from bottom to top. A self-bound exciton layer 107 is provided between the active layer 103 and the lower waveguide layer 102 and between the lower confinement layer 101 and the lower waveguide layer 102.

[0028] The self-bound exciton layer 107 is NbO 2 , Sb 2 Te 3 , KNbO 3 , Bi 2 O 2 Se, Ag 2 SFe 2 O 8 , Ag 8 GeS 6 any one of them.

[0029] The self-bound exciton layer 107 has a topological monoclinic phase periodic ferroelectric domain, forming a strong out-of-plane spontaneous polarization to induce self-bound excitons, enhancing the exciton-assisted stimulated emission of the laser element, reducing the excitation threshold of the laser element, enhancing the continuous oscillation at room temperature, enhancing the confinement factor, and enhancing the optical power and slope efficiency of the laser element.

[0030] The thickness of the self-bound exciton layer 107 is 5 - 500 nm.

[0031] The lower confinement layer 101 is any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, with a thickness of 50 - 5000 nm and a Si doping concentration of 1E18 - 1E20 cm -3 ;

[0032] The lower waveguide layer 102 and the upper waveguide layer 104 are any one or any combination of GaN, InGaN, AlInGaN, with a thickness of 50 - 1000 nm and a Si doping concentration of 1E16 - 5E19 cm -3 ;

[0033] The electron blocking layer 105 and the upper confinement layer 106 are any one or any combination of GaN, AlGaN, AlInGaN, AlN, AlInN, with a thickness of 20 - 1000 nm and a Mg doping concentration of 1E18 - 1E20 cm -3 ;

[0034] The active layer 103 is a periodic structure composed of well layers and barrier layers. The well layer is an InGaN well layer, and the barrier layer is any one or any combination of GaN, AlInGaN, AlGaN, and AlInN;

[0035] The number of periods of the active layer 103 is m: 4 ≥ m ≥ 1.

[0036] The substrate 100 includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl 2 O 4 , MgO, ZnO, ZrB 2 , LiAlO 2 and LiGaO 2 any one of the composite substrates.

[0037] Example 2

[0038] Please refer to Figure 1 , this embodiment provides a technical solution: a semiconductor laser device provided with a self-trapped exciton layer. A semiconductor laser device provided with a self-trapped exciton layer includes, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106. A self-trapped exciton layer 107 is provided between the active layer 103 and the lower waveguide layer 102 and between the lower confinement layer 101 and the lower waveguide layer 102.

[0039] The self-trapped exciton layer 107 has a topological monoclinic phase periodic ferroelectric domain, forming strongly out-of-plane spontaneous polarization-induced self-trapped excitons, enhancing the exciton-assisted stimulated emission of the laser device, reducing the excitation threshold of the laser device, improving continuous oscillation at room temperature, enhancing the confinement factor, and improving the optical power and slope efficiency of the laser device.

[0040] Any combination of the self-trapped exciton layers includes the following heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots, and two-dimensional Moiré superlattice structures of binary combinations: NbO 2 / Sb 2 Te 3 , NbO 2 / KNbO 3 , NbO 2 / Bi 2 O 2 Se, NbO 2 / Ag 2 SFe 2 O 8 , NbO 2 / Ag 8 GeS 6 , Sb 2 Te 3 / KNbO 3 , Sb 2 Te 3 / Bi 2 O 2 Se, Sb 2 Te 3 / Ag 2 SFe 2 O 8 , Sb 2 Te 3 / Ag 8 GeS 6 , KNbO 3 / Bi 2 O 2 Se, KNbO 3 / Ag 2 SFe 2 O 8 , KNbO 3 / Ag 8 GeS 6 , Bi 2 O 2 Se / Ag 2 SFe 2 O 8 , Bi 2 O 2 Se / Ag 8 GeS 6 , Ag 2 SFe 2 O 8 / Ag 8 GeS 6 。

[0041] The thickness of the self-trapped exciton layer 107 is 5 - 500 nm.

[0042] The lower confinement layer 101 is any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, with a thickness of 50 - 5000 nm and an Si doping concentration of 1E18 - 1E20 cm -3 ;

[0043] The lower waveguide layer 102 and the upper waveguide layer 104 are any one or any combination of GaN, InGaN, AlInGaN, with a thickness of 50 - 1000 nm and an Si doping concentration of 1E16 - 5E19 cm -3 ;

[0044] The electron blocking layer 105 and the upper confinement layer 106 are any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 20 to 1000 nm and an Mg doping concentration of 1E18 to 1E20 cm -3 ;

[0045] The active layer 103 is a periodic structure composed of well layers and barrier layers. The well layer is an InGaN well layer, and the barrier layer is any one or any combination of GaN, AlInGaN, AlGaN, and AlInN;

[0046] The number of periods of the active layer 103 is m: 4 ≥ m ≥ 1.

[0047] The substrate 100 includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 and LiGaO 2 any one of the composite substrates.

[0048] Example 3

[0049] Please refer to Figure 1 , this embodiment provides a technical solution: a semiconductor laser device provided with a self-trapped exciton layer. A semiconductor laser device provided with a self-trapped exciton layer includes, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106. A self-trapped exciton layer 107 is provided between the active layer 103 and the lower waveguide layer 102 and between the lower confinement layer 101 and the lower waveguide layer 102.

[0050] The self-trapped exciton layer 107 has a topologically monoclinic phase periodic ferroelectric domain, forming a strong out-of-plane spontaneous polarization to induce self-trapped excitons, enhancing the exciton-assisted stimulated emission of the laser device, reducing the excitation threshold of the laser device, improving the continuous oscillation at room temperature, enhancing the confinement factor, and improving the optical power and slope efficiency of the laser device.

[0051] Any combination of the self-trapped exciton layer 107 includes the following ternary combination of heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots, and two-dimensional moiré superlattice structures: NbO 2 / Sb 2 Te 3 / KNbO 3 , NbO 2 / Sb 2 Te 3 / Bi 2 O 2 Se, NbO 2 / Sb 2 Te 3 / Ag 2 SFe 2 O 8 , NbO 2 / Sb 2 Te 3 / Ag 8 GeS 6 , NbO 2 / KNbO 3 / Bi 2 O 2 Se, NbO 2 / KNbO 3 / Ag 2 SFe 2 O 8 ,NbO 2 / KNbO 3 / Ag 8 GeS 6 , NbO 2 / Bi 2 O 2 Se / Ag 2 SFe 2 O 8 , NbO 2 / Bi 2 O 2 Se / Ag 8 GeS 6 , NbO 2 / Ag 2 SFe 2 O 8 / Ag 8 GeS 6 , Sb 2 Te 3 / KNbO 3 / Bi 2 O 2 Se, Sb 2 Te 3 / KNbO 3 / Ag 2 SFe 2 O 8 , Sb 2 Te 3 / KNbO 3 / Ag 8 GeS 6 , Sb2 Te 3 / Bi 2 O 2 Se / Ag 2 SFe 2 O 8 , Sb 2 Te 3 / Bi 2 O 2 Se / Ag 8 GeS 6 , Sb 2 Te 3 / Ag 2 SFe 2 O 8 / Ag 8 GeS 6 , KNbO 3 / Bi 2 O 2 Se / Ag 2 SFe 2 O 8 , KNbO 3 / Bi 2 O 2 Se / Ag 8 GeS 6 , KNbO 3 / Ag 2 SFe 2 O 8 / Ag 8 GeS 6 , Bi 2 O 2 Se / Ag 2 SFe 2 O 8 / Ag 8 GeS 6 。

[0052] The thickness of the self-trapped exciton layer 107 is 5 - 500 nm.

[0053] The lower confinement layer 101 is any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, and AlInN, with a thickness of 50 - 5000 nm and an Si doping concentration of 1E18 - 1E20 cm -3 ;

[0054] The lower waveguide layer 102 and the upper waveguide layer 104 are any one or any combination of GaN, InGaN, and AlInGaN, with a thickness of 50 - 1000 nm and an Si doping concentration of 1E16 - 5E19 cm -3 ;

[0055] The electron blocking layer 105 and the upper confinement layer 106 are any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 20 to 1000 nm and an Mg doping concentration of 1E18 to 1E20 cm -3 ;

[0056] The active layer 103 is a periodic structure composed of well layers and barrier layers. The well layer is an InGaN well layer, and the barrier layer is any one or any combination of GaN, AlInGaN, AlGaN, and AlInN;

[0057] The number of periods of the active layer 103 is m: 4 ≥ m ≥ 1.

[0058] The substrate 100 includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 and LiGaO 2 Any one of the composite substrates.

[0059] Example 4

[0060] Please refer to Figure 1 , this embodiment provides a technical solution: a semiconductor laser device provided with a self-trapped exciton layer, a semiconductor laser device provided with a self-trapped exciton layer, which sequentially includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106 from bottom to top. A self-trapped exciton layer 107 is provided between the active layer 103 and the lower waveguide layer 102 and between the lower confinement layer 101 and the lower waveguide layer 102.

[0061] The self-trapped exciton layer 107 has a topologically monoclinic phase periodic ferroelectric domain, forming a strong out-of-plane spontaneous polarization-induced self-trapped exciton, enhancing the exciton-assisted stimulated emission of the laser device, reducing the excitation threshold of the laser device, enhancing the continuous oscillation at room temperature, enhancing the confinement factor, and enhancing the optical power and slope efficiency of the laser device.

[0062] Any combination of the self-trapped exciton layer 107 includes the following four-element combination of heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots, and two-dimensional Moiré superlattice structures: NbO 2 / Sb 2 Te 3 / KNbO3 / Bi 2 O 2 Se, NbO 2 / Sb 2 Te 3 / KNbO 3 / Ag 2 SFe 2 O 8 , NbO 2 / Sb 2 Te 3 / KNbO 3 / Ag 8 GeS 6 , NbO 2 / KNbO 3 / Bi 2 O 2 Se / Ag 2 SFe 2 O 8 , NbO 2 / KNbO 3 / Bi 2 O 2 Se / Ag 8 GeS 6 , NbO 2 / Bi 2 O 2 Se / Ag 2 SFe 2 O 8 / Ag 8 GeS 6 , Sb 2 Te 3 / KNbO 3 / Bi 2 O 2 Se / Ag 2 SFe 2 O 8 , Sb 2 Te 3 / KNbO 3 / Bi 2 O 2 Se / Ag 8 GeS 6 , Sb 2 Te 3 / Bi 2 O 2 Se / Ag 2 SFe 2 O 8 / Ag 8 GeS 6 , KNbO 3 / Bi 2 O 2 Se / Ag 2 SFe 2 O 8 / Ag 8 GeS 6 。

[0063] Example 5

[0064] Please refer to Figure 1 , this example provides a technical solution: a semiconductor laser device provided with a self-trapped exciton layer. The semiconductor laser device provided with a self-trapped exciton layer includes, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106. A self-trapped exciton layer 107 is provided between the active layer 103 and the lower waveguide layer 102 and between the lower confinement layer 101 and the lower waveguide layer 102.

[0065] The self-trapped exciton layer 107 has a topological monoclinic phase periodic ferroelectric domain, forms a strong out-of-plane spontaneous polarization to induce self-trapped excitons, enhances the exciton-assisted stimulated emission of the laser device, reduces the excitation threshold of the laser device, improves the continuous oscillation at room temperature, enhances the confinement factor, and improves the optical power and slope efficiency of the laser device.

[0066] Any combination of the self-trapped exciton layers 107 includes the following heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots, and two-dimensional Moiré superlattice structures of five-element and six-element combinations: NbO 2 / Sb 2 Te 3 / KNbO 3 / Bi 2 O 2 Se / Ag 2 SFe 2 O 8 ,NbO 2 / Sb 2 Te 3 / KNbO 3 / Bi 2 O 2 Se / Ag 8 GeS 6 , NbO 2 / Sb 2 Te 3 / KNbO 3 / Ag 2 SFe 2 O 8 / Ag 8 GeS 6 , NbO 2 / Sb2 Te 3 / Bi 2 O 2 Se / Ag 2 SFe 2 O 8 / Ag 8 GeS 6 , NbO 2 / KNbO 3 / Bi 2 O 2 Se / Ag 2 SFe 2 O 8 / Ag 8 GeS 6 , Sb 2 Te 3 / KNbO 3 / Bi 2 O 2 Se / Ag 2 SFe 2 O 8 / Ag 8 GeS 6 , NbO 2 / Sb 2 Te 3 / KNbO 3 / Bi 2 O 2 Se / Ag 2 SFe 2 O 8 / Ag 8 GeS 6 。

[0067] The thickness of the self-trapped exciton layer 107 is 5 - 500 nm.

[0068] The lower confinement layer 101 is any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, with a thickness of 50 - 5000 nm and an Si doping concentration of 1E18 - 1E20 cm -3 ;

[0069] The lower waveguide layer 102 and the upper waveguide layer 104 are any one or any combination of GaN, InGaN, AlInGaN, with a thickness of 50 - 1000 nm and an Si doping concentration of 1E16 - 5E19 cm -3 ;

[0070] The electron blocking layer 105 and the upper confinement layer 106 are any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 20 to 1000 nm and an Mg doping concentration of 1E18 to 1E20 cm -3 ;

[0071] The active layer 103 is a periodic structure composed of well layers and barrier layers. The well layer is an InGaN well layer, and the barrier layer is any one or any combination of GaN, AlInGaN, AlGaN, and AlInN;

[0072] The number of periods of the active layer 103 is m: 4 ≥ m ≥ 1.

[0073] The substrate 100 includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 and LiGaO 2 any one of the composite substrates.

[0074] Experimental Example 1:

[0075] The green laser experiment was carried out using the technical solution in Example 1, and the self-trapped exciton layer was made of NbO 2 for the experiment;

[0076] Experimental Example 2:

[0077] The green laser experiment was carried out using the technical solution in Example 2, and the self-trapped exciton layer was made of NbO 2 / Sb 2 Te 3 for the experiment;

[0078] Experimental Example 3:

[0079] The green laser experiment was carried out using the technical solution in Example 3, and the self-trapped exciton layer was made of NbO 2 / Sb 2 Te 3 / KNbO 3 for the experiment;

[0080] Experimental Example 4:

[0081] The green laser experiment was carried out using the technical solution in Example 4, and the self-trapped exciton layer was made of NbO 2 / Sb 2 Te3 / KNbO 3 / Bi 2 O 2 Se was used for experiments;

[0082] Experimental Example 5:

[0083] The technical solution in Example 5 was adopted for the green laser experiment. The self-trapped exciton layer used NbO 2 / Sb 2 Te 3 / KNbO 3 / Bi 2 O 2 Se / Ag 2 SFe 2 O 8 for experiments;

[0084] The data of Experimental Examples 1 - 5 are as follows:

[0085]

[0086] The comparison data between the average values of the data of Experimental Examples 1 - 5 and traditional laser elements are as follows:

[0087]

[0088] The slope efficiency of the green laser element was increased from 0.36 / A to 0.48 W / A, an increase of 33%; the optical power was increased from 0.5 W to 0.67 W, an increase of 34%; the threshold voltage was decreased from 7.4 V to 5.7 V, a decrease of 23%; the confinement factor was increased from 1.10% to 1.60%, an increase of 45%.

[0089] Compared with the prior art, a self-trapped exciton layer is provided between the active layer and the lower waveguide layer and between the lower waveguide layer and the lower confinement layer. The self-trapped exciton layer has a topological monoclinic phase periodic ferroelectric domain, forming a strong out-of-plane spontaneous polarization to induce self-trapped excitons, increasing the free exciton binding energy from below 10 meV to above 20 meV, reducing the temperature threshold of the exciton radiation of the laser, enabling exciton optical radiation at room temperature or higher temperatures. At the same time, it enhances the exciton-assisted stimulated emission of the laser element, reduces the polarization effect of the active layer, reduces the quantum-confined Stark effect, improves the carrier localization and hole injection and transport efficiency, enhances the peak gain of the laser, reduces the excitation threshold of the laser element, improves the continuous oscillation at room temperature, enhances the confinement factor and gain uniformity, and improves the optical power and slope efficiency of the laser element.

[0090] The above embodiments are only used to illustrate the present invention and do not limit the technical solutions described in the present invention. Although the present specification has described the present invention in detail with reference to the above embodiments, the present invention is not limited to the above specific implementation manners. Therefore, any modification or equivalent replacement of the present invention; and all technical solutions and their improvements that do not depart from the spirit and scope of the invention are covered by the scope of the claims of the present invention.

Claims

1. A semiconductor laser device provided with a self-confined exciton layer, which sequentially includes a substrate (100), a lower confinement layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104), an electron blocking layer (105), and an upper confinement layer (106) from bottom to top. Characterized in that: A self-trapped exciton layer (107) is provided between the active layer (103) and the lower waveguide layer (102) and between the lower confinement layer (101) and the lower waveguide layer (102). The self-trapped exciton layer (107) is NbO 2 , Sb 2 Te 3 , KNbO 3 , Bi 2 O 2 Se, Ag 2 SFe 2 O 8 , Ag 8 GeS 6 or any combination thereof. The self-trapped exciton layer (107) has a topological monoclinic phase periodic ferroelectric domain, forming a strong out-of-plane spontaneous polarization to induce self-trapped excitons, enhancing the exciton-assisted stimulated emission of the laser element, reducing the excitation threshold of the laser element, improving the continuous oscillation at room temperature, enhancing the confinement factor, and improving the optical power and slope efficiency of the laser element.

2. A semiconductor laser device provided with a self-confined exciton layer as claimed in claim 1, Characterized in that, Any combination of the self-trapped exciton layer (107) includes the following heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots, two-dimensional Moiré superlattice structures of binary combinations: NbO 2 / Sb 2 Te 3 , NbO 2 / KNbO 3 , NbO 2 / Bi 2 O 2 Se, NbO 2 / Ag 2 SFe 2 O 8 ,NbO 2 / Ag 8 GeS 6 , Sb 2 Te 3 / KNbO 3 , Sb 2 Te 3 / Bi 2 O 2 Se, Sb 2 Te 3 / Ag 2 SFe 2 O 8 , Sb 2 Te 3 / Ag 8 GeS 6 , KNbO 3 / Bi 2 O 2 Se, KNbO 3 / Ag 2 SFe 2 O 8 , KNbO 3 / Ag 8 GeS 6 , Bi 2 O 2 Se / Ag 2 SFe 2 O 8 , Bi 2 O 2 Se / Ag 8 GeS 6 ,Ag 2 SFe 2 O 8 / Ag 8 GeS 6 。 3. A semiconductor laser device provided with a self-confined exciton layer as claimed in claim 1, Characterized in that, Any combination of the self-trapped exciton layer (107) includes the following ternary combinations of heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots, and two-dimensional Moiré superlattice structures: NbO 2 / Sb 2 Te 3 / KNbO 3 , NbO 2 / Sb 2 Te 3 / Bi 2 O 2 Se, NbO 2 / Sb 2 Te 3 / Ag 2 SFe 2 O 8 , NbO 2 / Sb 2 Te 3 / Ag 8 GeS 6 , NbO 2 / KNbO 3 / Bi 2 O 2 Se, NbO 2 / KNbO 3 / Ag 2 SFe 2 O 8 , NbO 2 / KNbO 3 / Ag 8 GeS 6 , NbO 2 / Bi 2 O 2 Se / Ag 2 SFe 2 O 8 , NbO 2 / Bi 2 O 2 Se / Ag 8 GeS 6 , NbO 2 / Ag 2 SFe 2 O 8 / Ag 8 GeS 6 ,Sb 2 Te 3 / KNbO 3 / Bi 2 O 2 Se, Sb 2 Te 3 / KNbO 3 / Ag 2 SFe 2 O 8 , Sb 2 Te 3 / KNbO 3 / Ag 8 GeS 6 , Sb 2 Te 3 / Bi 2 O 2 Se / Ag 2 SFe 2 O 8 , Sb 2 Te 3 / Bi 2 O 2 Se / Ag 8 GeS 6 , Sb 2 Te 3 / Ag 2 SFe 2 O 8 / Ag 8 GeS 6 , KNbO 3 / Bi 2 O 2 Se / Ag 2 SFe 2 O 8 , KNbO 3 / Bi 2 O 2 Se / Ag 8 GeS 6 , KNbO 3 / Ag 2 SFe 2 O 8 / Ag 8 GeS 6 , Bi 2 O 2 Se / Ag 2 SFe 2 O 8 / Ag 8 GeS 6 。 4. A semiconductor laser device provided with a self-confined exciton layer as claimed in claim 1, Characterized in that, Any combination of the self-trapped exciton layer (107) includes the following heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots, and two-dimensional Moiré superlattice structures of the quaternary combination: NbO 2 / Sb 2 Te 3 / KNbO 3 / Bi 2 O 2 Se, NbO 2 / Sb 2 Te 3 / KNbO 3 / Ag 2 SFe 2 O 8 ,NbO 2 / Sb 2 Te 3 / KNbO 3 / Ag 8 GeS 6 , NbO 2 / KNbO 3 / Bi 2 O 2 Se / Ag 2 SFe 2 O 8 , NbO 2 / KNbO 3 / Bi 2 O 2 Se / Ag 8 GeS 6 , NbO 2 / Bi 2 O 2 Se / Ag 2 SFe 2 O 8 / Ag 8 GeS 6 , Sb 2 Te 3 / KNbO 3 / Bi 2 O 2 Se / Ag 2 SFe 2 O 8 , Sb 2 Te 3 / KNbO 3 / Bi 2 O 2 Se / Ag 8 GeS 6 , Sb 2 Te 3 / Bi 2 O 2 Se / Ag 2 SFe 2 O 8 / Ag 8 GeS 6 , KNbO 3 / Bi 2 O 2 Se / Ag 2 SFe 2 O 8 / Ag 8 GeS 6 。 5. A semiconductor laser device provided with a self-confined exciton layer as claimed in claim 1, Characterized in that, Any combination of the self - trapped exciton layer (107) includes the following heterojunctions, superlattices, quantum wells, core - shell structures, quantum dots, two - dimensional Moiré superlattice structures of five - element and six - element combinations: NbO 2 / Sb 2 Te 3 / KNbO 3 / Bi 2 O 2 Se / Ag 2 SFe 2 O 8 , NbO 2 / Sb 2 Te 3 / KNbO 3 / Bi 2 O 2 Se / Ag 8 GeS 6 , NbO 2 / Sb 2 Te 3 / KNbO 3 / Ag 2 SFe 2 O 8 / Ag 8 GeS 6 , NbO 2 / Sb 2 Te 3 / Bi 2 O 2 Se / Ag 2 SFe 2 O 8 / Ag 8 GeS 6 , NbO 2 / KNbO 3 / Bi 2 O 2 Se / Ag 2 SFe 2 O 8 / Ag 8 GeS 6 , Sb 2 Te 3 / KNbO 3 / Bi 2 O 2 Se / Ag 2 SFe 2 O 8 / Ag 8 GeS 6 , NbO 2 / Sb 2 Te 3 / KNbO 3 / Bi 2 O 2 Se / Ag 2 SFe 2 O 8 / Ag 8 GeS 6 。 6. A semiconductor laser device provided with a self-confined exciton layer as claimed in claim 1, Characterized in that, The thickness of the self-confined exciton layer (107) is 5 to 500 nm.

7. A semiconductor laser device provided with a self-confined exciton layer as claimed in claim 1, Characterized in that, The lower confinement layer (101) is any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, and AlInN, with a thickness of 50 to 5000 nm and an Si doping concentration of 1E18 to 1E20 cm -3 ; the lower waveguide layer (102) and the upper waveguide layer (104) are any one or any combination of GaN, InGaN, and AlInGaN, with a thickness of 50 to 1000 nm and an Si doping concentration of 1E16 to 5E19 cm -3 ; the electron blocking layer (105) and the upper confinement layer (106) are any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 20 to 1000 nm and an Mg doping concentration of 1E18 to 1E20 cm -3 ; the active layer (103) is a periodic structure composed of well layers and barrier layers. The well layer is an InGaN well layer, and the barrier layer is any one or any combination of GaN, AlInGaN, AlGaN, and AlInN. The number of periods of the active layer (103) is m: 4 ≥ m ≥ 1.

8. A semiconductor laser device provided with a self-confined exciton layer as claimed in claim 1, Characterized in that, The substrate (100) includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl 2 O 4 , MgO, ZnO, ZrB 2 , LiAlO 2 , and LiGaO 2 composite substrate.

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