A rectification heat pump system for the production of semiconductor-grade and electronic-grade hydrofluoric acid

Abstract

The present invention discloses a rectification heat pump system for the production of semiconductor-grade and electronic-grade hydrofluoric acid, which includes a rectification column, a heat pump assembly, a first heat exchange sleeve, and a steam heating sleeve. The top of the rectification column is connected to the first feed port of the heat pump assembly, and the first discharge port flows back to the top of the rectification column. The bottom of the rectification column is connected to the second feed port of the heat pump assembly, and the second discharge port flows back to the bottom of the rectification column; a first heat exchange sleeve is arranged on the pipeline between the rectification column and the second feed port of the heat pump assembly. The inlet of the first heat exchange sleeve is connected to the pipeline between the rectification column and the first feed port of the heat pump assembly, and the outlet of the first heat exchange sleeve is connected to the pipeline between the rectification column and the first discharge port of the heat pump assembly; a steam heating sleeve is arranged on the pipeline between the second discharge port of the heat pump assembly and the rectification column. The present invention utilizes the heat pump to recover heat for kettle heating, thereby reducing or replacing the energy consumed for kettle heating, thus achieving the effect of energy conservation and consumption reduction.

Description

Technical Field

[0001] The present invention relates to the technical field of hydrofluoric acid rectification, and particularly relates to a rectification heat pump system for the production of semiconductor-grade and electronic-grade hydrofluoric acid. Background Art

[0002] Hydrogen fluoride is the basis of modern fluorination industry and is the most basic raw material for producing elemental fluorine, various fluorinated coolants, fluorine-containing new materials, inorganic fluorinated salts, various organic fluorides, etc. Therefore, exploring high-efficiency, low-energy-consuming, green and sustainable hydrogen fluoride production process technologies is of great significance and far-reaching impact on the fluorine chemical industry. When manufacturing hydrogen fluoride, a rectification tower is required for rectification to increase the purity of hydrogen fluoride.

[0003] Hydrogen fluoride purification is a process of refining and purifying raw hydrogen fluoride gas, mainly to remove impurities and improve the purity of hydrogen fluoride to meet the requirements of different application fields. Among them, the rectification tower is one of the core equipment in the hydrogen fluoride purification process, mainly used to separate the mixed gas into different components to achieve the purpose of purifying hydrogen fluoride. The working principle of the rectification tower is to utilize the vapor-liquid equilibrium difference of different components in the tower and separate and purify the mixed gas through the action of multiple tower plates or packing layers. In the hydrogen fluoride purification process, multiple tower plates are generally used for separation, and there is a liquid pool on each tower plate. The mixed gas enters from the bottom of the tower and, through the separation action of multiple tower plates, finally obtains hydrogen fluoride gas with a higher purity at the top of the tower.

[0004] The existing traditional rectification tower for producing anhydrous hydrogen fluoride includes a tower body, a tower kettle, a reboiler, and a condenser. The top of the tower kettle is connected and communicated with the side of the tower body and the top of the reboiler through a three-way pipe respectively, and the bottom of the tower kettle is connected and communicated with the bottom end of the tower body and the bottom end of the reboiler through a three-way pipe respectively. A liquid level gauge is connected to the three-way pipe at the bottom of the tower kettle, a temperature measuring port is also provided on the side of the tower body, and a condenser is provided at the top of the tower body. The existing hydrogen fluoride rectification tower needs to be heated by steam, electricity or natural gas, and uses a refrigerator for refrigeration as the source of cooling capacity, with relatively high energy consumption. How to save energy, reduce consumption and reduce carbon emissions is a very meaningful research. Summary of the Invention

[0005] The purpose of the present invention is to provide a rectification heat pump system for the production of semiconductor-grade and electronic-grade hydrofluoric acid, which uses a heat pump to recover heat for heating the tower kettle, thereby reducing or replacing the energy consumed for heating the tower kettle, and thus achieving the effect of energy conservation and consumption reduction.

[0006] In order to solve the above technical problems, the technical solution adopted by the present invention is: a rectification heat pump system for the production of semiconductor-grade and electronic-grade hydrofluoric acid, including a rectification tower, a heat pump assembly, a first heat exchange sleeve, and a steam heating sleeve;

[0007] The top of the rectifying column is connected to the first feed port of the heat pump assembly through a pipeline, and the first discharge port of the heat pump assembly is refluxed to the top of the rectifying column through a pipeline;

[0008] The bottom of the rectifying column is connected to the second feed port of the heat pump assembly through a pipeline, and the second discharge port of the heat pump assembly is refluxed to the bottom of the rectifying column through a pipeline;

[0009] A first heat exchange sleeve is arranged on the pipeline between the rectifying column and the second feed port of the heat pump assembly. The two side walls of the first heat exchange sleeve along its length direction are respectively provided with an inlet and an outlet. The inlet of the first heat exchange sleeve is connected to the pipeline between the rectifying column and the first feed port of the heat pump assembly, and the outlet of the first heat exchange sleeve is connected to the pipeline between the rectifying column and the first discharge port of the heat pump assembly;

[0010] A steam heating sleeve is arranged on the pipeline between the second discharge port of the heat pump assembly and the rectifying column. The two side walls of the steam heating sleeve along its length direction are respectively provided with an inlet and an outlet.

[0011] As a further optimization of a rectifying heat pump system for semiconductor-grade and electronic-grade hydrofluoric acid production according to the present invention: A second heat exchange sleeve is further arranged on the pipeline between the rectifying column and the first heat exchange sleeve. The two side walls of the second heat exchange sleeve along its length direction are respectively provided with an inlet and an outlet. The inlet of the second heat exchange sleeve is connected to the outlet of the steam heating sleeve.

[0012] As a further optimization of a rectifying heat pump system for semiconductor-grade and electronic-grade hydrofluoric acid production according to the present invention: A first valve is arranged on the inlet pipeline of the first heat exchange sleeve, a second valve is arranged on the inlet pipeline of the steam heating sleeve, and a third valve is arranged on the inlet pipeline of the second heat exchange sleeve.

[0013] As a further optimization of a rectifying heat pump system for semiconductor-grade and electronic-grade hydrofluoric acid production according to the present invention: The first heat exchange sleeve, the second heat exchange sleeve, and the steam heating sleeve all include an inner pipe body and an outer pipe body. The inner pipe body is sleeved inside the outer pipe body, and an annular cavity is formed between the inner pipe body and the outer pipe body. The outer wall of the outer pipe body is provided with an inlet and an outlet communicating with the annular cavity. Both ends of the annular cavity are closed by annular baffles. A plurality of first guide plates and second guide plates are arranged along the length direction of the annular cavity. The first guide plates and the second guide plates are arranged alternately. The first guide plates and the second guide plates are both annular plates. Their outer rings are hermetically connected to the inner wall of the outer pipe body, and their inner rings are hermetically connected to the outer wall of the inner pipe body. The cross-sections of the first guide plates and the second guide plates are arc-shaped, and the inner arc surfaces of the first guide plates and the second guide plates are arranged towards the inlet direction. Material transfer holes are arranged in the area near the inner ring of the first guide plates, and material transfer holes are arranged in the area near the outer ring of the second guide plates.

[0014] As a further optimization of a rectifying heat pump system for the production of semiconductor-grade and electronic-grade hydrofluoric acid according to the present invention: an adiabatic coating is provided on the inner wall of the outer tube body.

[0015] As a further optimization of a rectifying heat pump system for the production of semiconductor-grade and electronic-grade hydrofluoric acid according to the present invention: the adiabatic coating is a silicate adiabatic coating, a ceramic adiabatic coating or a carbon fiber adiabatic coating.

[0016] As a further optimization of a rectifying heat pump system for the production of semiconductor-grade and electronic-grade hydrofluoric acid according to the present invention: the material transfer hole is a tapered hole, and the large-diameter end of the material transfer hole is arranged towards the inlet direction.

[0017] As a further optimization of a rectifying heat pump system for the production of semiconductor-grade and electronic-grade hydrofluoric acid according to the present invention: the inner tube body and the flow guiding plate are both made of high thermal conductivity materials, and the inner tube body and the flow guiding plate are of an integrally formed structure.

[0018] As a further optimization of a rectifying heat pump system for the production of semiconductor-grade and electronic-grade hydrofluoric acid according to the present invention: the materials of the inner tube body and the flow guiding plate are metallic copper or carbon nanotubes.

[0019] As a further optimization of a rectifying heat pump system for the production of semiconductor-grade and electronic-grade hydrofluoric acid according to the present invention: the inlets and outlets of the first heat exchange sleeve, the second heat exchange sleeve and the steam heating sleeve are arranged opposite to each other.

[0020] The present invention has the following beneficial effects:

[0021] 1. The present invention utilizes a heat pump to recover heat for tower kettle heating, thereby reducing or replacing the energy consumed for tower kettle heating, and thus achieving the effect of energy conservation and consumption reduction;

[0022] 2. The heat pump system of the present invention is also designed with heat exchange sleeves and a steam heating sleeve, which can be flexibly adjusted according to the actual working conditions of the heat pump to meet the operation requirements of the rectifying tower;

[0023] 3. The heat exchange sleeves and the steam heating sleeve of the present invention have a unique heat exchange structure design, and the heat exchange effect can be greatly improved through the ingenious layout of the flow guiding plate and the material transfer hole. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 is a schematic structural diagram of the rectifying heat pump system of the present invention;

[0025] Figure 2 is a schematic internal structural diagram of the first heat exchange sleeve in the rectifying heat pump system of the present invention;

[0026] Figure 3 is Figure 2Partial enlarged schematic diagram at position A in the figure;

[0027] Markings in the figure: 1, distillation column; 2, heat pump assembly; 3, first heat exchange sleeve; 4, steam heating sleeve; 5, second heat exchange sleeve; 601, inner tube body; 602, outer tube body; 603, annular cavity; 604, annular baffle; 605, first deflector; 606, second deflector; 607, material transfer hole. Specific implementation mode

[0028] To better understand the present invention, the content of the present invention will be further clarified below in conjunction with embodiments, but the content of the present invention is not limited to the following embodiments.

[0029] As Figure 1 shown, a rectification heat pump system for the production of semiconductor-grade and electronic-grade hydrofluoric acid includes a distillation column 1, a heat pump assembly 2, a first heat exchange sleeve 3, and a steam heating sleeve 4.

[0030] A heat pump can raise the temperature of the heat in a low-temperature heat source through compression and then release it into a high-temperature environment, thereby achieving heat supply.

[0031] The top of the distillation column 1 is connected to the first feed port of the heat pump assembly 2 through a pipeline, and the first discharge port of the heat pump assembly 2 is refluxed to the top of the distillation column 1 through a pipeline.

[0032] The bottom of the distillation column 1 is connected to the second feed port of the heat pump assembly 2 through a pipeline, and the second discharge port of the heat pump assembly 2 is refluxed to the bottom of the distillation column 1 through a pipeline.

[0033] A first heat exchange sleeve 3 is provided on the pipeline between the distillation column 1 and the second feed port of the heat pump assembly 2. The two side walls at both ends of the first heat exchange sleeve 3 along its length are respectively provided with an inlet and an outlet. The inlet of the first heat exchange sleeve 3 is connected to the pipeline between the distillation column 1 and the first feed port of the heat pump assembly 2, and the outlet of the first heat exchange sleeve 3 is connected to the pipeline between the distillation column 1 and the first discharge port of the heat pump assembly 2.

[0034] A steam heating sleeve 4 is provided on the pipeline between the second discharge port of the heat pump assembly 2 and the distillation column 1. The two side walls at both ends of the steam heating sleeve 4 along its length are respectively provided with an inlet and an outlet. High-temperature steam is input into the inlet of the steam heating sleeve 4.

[0035] A second heat exchange sleeve 5 is further provided on the pipeline between the distillation column 1 and the first heat exchange sleeve 3. The two side walls at both ends of the second heat exchange sleeve 5 along its length are respectively provided with an inlet and an outlet. The inlet of the second heat exchange sleeve 5 is connected to the outlet of the steam heating sleeve 4.

[0036] A first valve is provided on the inlet pipeline of the first heat exchange sleeve 3, a second valve is provided on the inlet pipeline of the steam heating sleeve 4, and a third valve is provided on the inlet pipeline of the second heat exchange sleeve 5.

[0037] When the efficiency of the heat pump assembly 2 is insufficient, the steam heating sleeve 4 can be started to operate. Through the inlet, high-temperature steam enters the annular cavity 603 of the steam heating sleeve 4. Through the heat exchange between the high-temperature steam and the material, the temperature of the material entering the bottom of the rectification column is increased to meet the operating requirements of the rectification column.

[0038] Through the setting of the first heat exchange sleeve 3, the high-temperature material collected from the top of the rectification column 1 enters through the inlet of the first heat exchange sleeve 3 and exchanges heat with the low-temperature material to be entered into the heat pump assembly 2, which can preheat the material to be heated when entering the heat pump assembly 2 and improve the efficiency of the heat pump assembly 2.

[0039] Through the setting of the second heat exchange sleeve 5, the heat of the steam can be further utilized. The steam that has exchanged heat in the steam heating sleeve 4 still has a certain temperature. It exchanges heat with the low-temperature material to be entered into the heat pump assembly 2 in the second heat exchange sleeve 5, which can preheat the material to be heated when entering the heat pump assembly 2 and further improve the efficiency of the heat pump assembly 2.

[0040] Such as Figure 2 and 3 As shown, the first heat exchange sleeve 3, the second heat exchange sleeve 5, and the steam heating sleeve 4 all include an inner tube body 601 and an outer tube body 602. The inner tube body 601 is sleeved inside the outer tube body 602. An annular cavity 603 is formed between the inner tube body 601 and the outer tube body 602. The outer wall of the outer tube body 602 is provided with an inlet and an outlet communicating with the annular cavity 603. The inlets and outlets of the first heat exchange sleeve 3, the second heat exchange sleeve 5, and the steam heating sleeve 4 are arranged oppositely.

[0041] Both ends of the annular cavity 603 are closed by annular baffles 604. A plurality of first flow guiding plates 605 and second flow guiding plates 606 are arranged along the length direction of the annular cavity 603. The first flow guiding plates 605 and the second flow guiding plates 606 are arranged alternately. The first flow guiding plates 605 and the second flow guiding plates 606 are both annular plates. Their outer rings are hermetically connected to the inner wall of the outer tube body 602, and their inner rings are hermetically connected to the outer wall of the inner tube body 601. The cross-sections of the first flow guiding plates 605 and the second flow guiding plates 606 are arc-shaped, and the inner arc surfaces of the first flow guiding plates 605 and the second flow guiding plates 606 are arranged towards the inlet direction. Material transfer holes 607 are provided in the area near the inner ring of the first flow guiding plate 605, and material transfer holes 607 are provided in the area near the outer ring of the second flow guiding plate 606.

[0042] Through the unique structural design of the above-mentioned flow guiding plates 605 / 606, the heat exchange efficiency can be greatly improved. After the high-temperature material enters the annular cavity 603, it flows along the length direction of the annular cavity 603. Due to the different distribution positions of the material transfer holes 607 on the first flow guiding plate 605 and the second flow guiding plate 606, the high-temperature material can form a turbulent flow during the flow process, increasing the exchange time with the low-temperature material, and thus improving the heat exchange efficiency.

[0043] It can be foreseen that the material transfer hole 607 can be set as a tapered hole, and the large-diameter end of the material transfer hole 607 is set towards the inlet direction. The tapered hole design can accelerate the material when it flows through the material transfer hole 607, which helps to form a turbulent flow.

[0044] The inner wall of the outer tube body 602 is provided with a heat-insulating coating. A heat-insulating coating is a coating used to reduce heat transfer and protect the surface of an object. Common heat-insulating coatings include:

[0045] Silicate heat-insulating coating: This coating is mainly made of materials such as silicate, quartz powder, and cement, and has good high-temperature resistance and heat-insulating performance.

[0046] Ceramic heat-insulating coating: This coating is mainly made of ceramic materials such as alumina and silica, and has high-temperature stability and good...

[0047] Polymer heat-insulating coating: This coating is mainly made of polymer materials and has good heat resistance and heat-insulating performance. Metal heat-insulating coating: This coating is mainly made of metal materials such as aluminum, zinc, and copper, and has a high reflectivity and good heat-insulating performance.

[0048] Carbon fiber heat-insulating coating: This coating is mainly made of materials such as carbon fiber and resin, and has good heat-insulating performance and high-temperature resistance.

[0049] In this embodiment, the heat-insulating coating is a silicate heat-insulating coating, a ceramic heat-insulating coating, or a carbon fiber heat-insulating coating.

[0050] The inner tube body 601 and the flow guiding plates are all made of high thermal conductivity materials, and the inner tube body 601 and the flow guiding plates are of an integrally formed structure.

[0051] High thermal conductivity materials refer to materials that can transfer heat quickly, and their thermal conductivity coefficients are usually higher than those of conventional materials. Common high thermal conductivity materials include copper, aluminum, silver, gold, diamond, alumina ceramics, graphite, silicon, etc. Among them, due to their good electrical conductivity and thermal conductivity, metal materials are widely used in heat sinks and radiators for electronic devices. Diamond is a material with a very high thermal conductivity coefficient and is widely used in fields such as high-power lasers. Alumina ceramics is a high-temperature material with good thermal conductivity and corrosion resistance and is widely used in high-temperature furnaces, heat exchangers, and other fields. In recent years, some new materials have also been found to have relatively high thermal conductivity, such as graphene, carbon nanotubes, etc. These materials have good thermal conductivity and mechanical properties and are widely studied and applied in new electronic devices and high-efficiency heat sinks.

[0052] In this embodiment, the inner tube body 601 and the flow guide plate are made of metal copper or carbon nanotubes.

[0053] The present invention uses a heat pump to recover heat for reboiler heating, thereby reducing or replacing the energy consumed for reboiler heating, thus achieving the effect of energy conservation and consumption reduction;

[0054] The heat pump system of the present invention is also designed with a heat exchange sleeve and a steam heating sleeve, which can be flexibly adjusted according to the actual working conditions of the heat pump to meet the operating requirements of the distillation column;

[0055] The heat exchange sleeve and the steam heating sleeve of the present invention have a unique heat exchange structure design, and the heat exchange effect can be greatly improved through the ingenious layout of the flow guide plate and the material transfer holes.

[0056] The specific embodiments of the present invention have been described above. It should be understood that the present invention is not limited to the above specific embodiments, and those skilled in the art can make various deformations or modifications within the scope of the claims, which do not affect the essence of the present invention.

Claims

1. A rectification heat pump system for the production of semiconductor-grade and electronic-grade hydrofluoric acid, characterized in that: It includes a rectifying column (1), a heat pump assembly (2), a first heat exchange sleeve (3), and a steam heating sleeve (4); The top of the rectifying column (1) is connected to the first feed port of the heat pump assembly (2) through a pipeline, and the first discharge port of the heat pump assembly (2) is refluxed to the top of the rectifying column (1) through a pipeline; The bottom of the rectifying column (1) is connected to the second feed port of the heat pump assembly (2) through a pipeline, and the second discharge port of the heat pump assembly (2) is refluxed to the bottom of the rectifying column (1) through a pipeline; A first heat exchange sleeve (3) is provided on the pipeline between the rectifying column (1) and the second feed port of the heat pump assembly (2). The two side walls at both ends of the first heat exchange sleeve (3) along its length are respectively provided with an inlet and an outlet. The inlet of the first heat exchange sleeve (3) is connected to the pipeline between the rectifying column (1) and the first feed port of the heat pump assembly (2), and the outlet of the first heat exchange sleeve (3) is connected to the pipeline between the rectifying column (1) and the first discharge port of the heat pump assembly (2); A steam heating sleeve (4) is provided on the pipeline between the second discharge port of the heat pump assembly (2) and the rectifying column (1). The two side walls at both ends of the steam heating sleeve (4) along its length are respectively provided with an inlet and an outlet, and high-temperature water vapor is input into the inlet of the steam heating sleeve (4); A second heat exchange sleeve (5) is further provided on the pipeline between the rectifying column (1) and the first heat exchange sleeve (3). The two side walls at both ends of the second heat exchange sleeve (5) along its length are respectively provided with an inlet and an outlet, and the inlet of the second heat exchange sleeve (5) is connected to the outlet of the steam heating sleeve (4).

2. The rectification heat pump system for semiconductor-grade and electronic-grade hydrofluoric acid production according to claim 1, wherein: A first valve is provided on the inlet pipeline of the first heat exchange sleeve (3), a second valve is provided on the inlet pipeline of the steam heating sleeve (4), and a third valve is provided on the inlet pipeline of the second heat exchange sleeve (5).

3. The rectification heat pump system for producing semiconductor-grade and electronic-grade hydrofluoric acid according to claim 1, characterized in that: The first heat exchange sleeve (3), the second heat exchange sleeve (5) and the steam heating sleeve (4) all include an inner tube body (601) and an outer tube body (602). The inner tube body (601) is sleeved inside the outer tube body (602), and an annular cavity (603) is formed between the inner tube body (601) and the outer tube body (602). An inlet and an outlet communicating with the annular cavity (603) are provided on the outer wall of the outer tube body (602). Both ends of the annular cavity (603) are closed by annular baffles (604). A plurality of first guide plates (605) and second guide plates (606) are arranged along the length direction of the annular cavity (603). The first guide plates (605) and the second guide plates (606) are arranged alternately. The first guide plates (605) and the second guide plates (606) are both annular plates, the outer rings of which are hermetically connected to the inner wall of the outer tube body (602), and the inner rings of which are hermetically connected to the outer wall of the inner tube body (601). The cross sections of the first guide plates (605) and the second guide plates (606) are arc-shaped, and the inner arc surfaces of the first guide plates (605) and the second guide plates (606) are arranged towards the inlet direction. Material transfer holes (607) are provided in the area near the inner ring of the first guide plates (605), and material transfer holes (607) are provided in the area near the outer ring of the second guide plates (606).

4. The rectification heat pump system for semiconductor-grade and electronic-grade hydrofluoric acid production according to claim 3, wherein: An adiabatic coating is provided on the inner wall of the outer tube body (602).

5. The rectification heat pump system for semiconductor-grade and electronic-grade hydrofluoric acid production according to claim 4, wherein: The adiabatic coating is a silicate adiabatic coating, a ceramic adiabatic coating or a carbon fiber adiabatic coating.

6. The rectification heat pump system for semiconductor-grade and electronic-grade hydrofluoric acid production according to claim 3, wherein: The material transfer holes (607) are tapered holes, and the large-diameter ends of the material transfer holes (607) are arranged towards the inlet direction.

7. The rectification heat pump system for semiconductor-grade and electronic-grade hydrofluoric acid production according to claim 3, characterized in that: The inner tube body (601) and the guide plates are made of high thermal conductivity materials, and the inner tube body (601) and the guide plates are of an integrally formed structure.

8. The rectification heat pump system for semiconductor-grade and electronic-grade hydrofluoric acid production according to claim 7, characterized in that: The materials of the inner tube body (601) and the guide plates are metallic copper or carbon nanotubes.

9. The rectification heat pump system for producing semiconductor-grade and electronic-grade hydrofluoric acid according to claim 3, wherein: The inlets and outlets of the first heat exchange sleeve (3), the second heat exchange sleeve (5) and the steam heating sleeve (4) are arranged opposite to each other.

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