High-entropy max phase material and high-entropy mxene material, and preparation method and use thereof
By preparing and etching high-entropy MAX phase materials, high-entropy MXene materials with layered structures and out-of-plane ordered arrangements are formed, solving the structural control problem of existing high-entropy MAX phase materials and expanding their performance in a variety of application fields.
Patent Information
- Application Number
- CN202210365107.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2022-04-07
- Publication Date
- 2026-04-21
- Estimated Expiration
- 2042-04-07
AI Technical Summary
In existing high-entropy MAX phase materials, Ti, Zr, Hf, Nb, and Ta elements are limited to in-plane solid solution distribution, making it difficult to control the structure through element distribution. This results in limited physical and chemical properties, and the application potential of high-entropy MXene materials has not been fully explored.
A layered high-entropy MAX phase material is formed by heat treatment after mixing M', M", A, and X elements in a specific ratio. High-entropy MXene material is prepared by etching the A layer. M' represents Cr, Mo, or W, M" is selected from group IIIB, IVB, VB, and VIB elements, A is selected from group IIIA, IVA, VA, and VIA elements, X is carbon, and the etchant is selected from halogen elements, halide hydrides, and halide metal salts.
The layered structure and out-of-plane ordered arrangement of high-entropy MAX phase materials were realized, and high-entropy MXene materials with unique properties were prepared, which are suitable for anti-corrosion coatings, high-temperature coatings, nuclear radiation protection, catalysis, sensors, electronic devices, supercapacitors, batteries, electromagnetic shielding, microwave absorbing materials and superconducting materials.
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Figure CN116924406B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of new materials, and more particularly to a high-entropy MAX phase material and a high-entropy MXene material, their preparation methods, and applications. Background Technology
[0002] The MAX phase is a layered transition metal carbide, nitride, and carbonitride, with the molecular formula M. n+1 AX n n = 1, 2, 3, or 4; M refers to transition metal elements, including Sc, Y, Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, W, etc.; A mainly refers to elements from Groups 3, 4, and 5, such as Al, Ga, In, Tl, Si, Ge, Sn, Pb, Zn, Cu, Au, Fe, etc.; X represents C or N. Besides the rich variety of elements constituting the MAX phase, the structure of the MAX phase can also be designed. When two M-phase elements (denoted as M1 and M2) lie in the same plane, M1 and M2 can be distributed in a solid solution form within the same plane, for example (Ti... 0.5 Nb 0.5 )2AlC, can also periodically exhibit an ordered distribution at specific locations, called an in-plane ordered MAX phase (denoted as i-MAX), for example (Mo 2 / 3 Y 1 / 3 )2AlC; When M1 and M2 are in different atomic layers, the MAX phase formed by M1 and M2 is called an out-of-plane ordered MAX phase (denoted as o-MAX), such as Mo2TiAlC. Based on the diversity of MAX phase elements and structures, more than 155 MAX phases have been reported, and new MAX phases are constantly being successfully prepared.
[0003] High-entropy materials, due to their high element content and design flexibility, may possess unique physical and chemical properties. According to the entropy calculation formula S = RlnN (where S represents entropy, R represents the gas molar constant, and N represents the number of metallic components), materials prepared when N ≥ 5, i.e., S ≥ 1.61R, are considered high-entropy materials. In recent years, high-entropy alloys, high-entropy oxides, and high-entropy sulfides have been reported. In 2020, the high-entropy MAX phase ((TiZrHfNbTa)2AlC) was reported, proving that high-entropy MAX phases can also exist stably, greatly expanding the exploration space of MAX. However, the Ti, Zr, Hf, Nb, and Ta elements in the high-entropy MAX phase (TiZrHfNbTa)2AlC are limited to in-plane solid solution distribution, and the structure of the high-entropy MAX phase cannot be controlled by the elemental distribution.
[0004] The ordered high-entropy MAX phase can not only achieve the addition of five or more M elements, but the ordered arrangement can also bring about specific physical and chemical properties. Furthermore, by selectively etching some M elements, medium-entropy or high-entropy MXenes with in-plane ordered vacancies can be prepared, which will also produce new physical and chemical properties. It is expected to show better performance in various applications such as catalysis, batteries, supercapacitors and electromagnetic shielding, and realize the industrialization and practical application of MXenes two-dimensional materials. Summary of the Invention
[0005] The object of the present invention is to provide a novel high-entropy MAX phase material in the first aspect, the chemical formula of which is represented as M'2M”2AX3, or M'2M”AX2; wherein M' represents at least one of chromium (Cr), molybdenum (Mo) or tungsten (W), M” is selected from at least five elements of group IIIB, IVB, VB and VIB, A is selected from at least one of group IIIA, IVA, VA and VIA, and X is carbon.
[0006] In some embodiments, A is selected from at least one element selected from aluminum (Al), gallium (Ga), indium (In), lead (Pb), silicon (Si), germanium (Ge), tin (Sn), or sulfur (S).
[0007] In some embodiments, the M” above is selected from at least five elements selected from scandium (Sc), titanium (Ti), vanadium (V), yttrium (Y), zirconium (Zr), niobium (Nb), hafnium (Hf), tantalum (Ta), and all lanthanides.
[0008] In some embodiments, the high-entropy MAX phase material described above has a layered structure, which includes an MX layer and an A layer; wherein the MX layer is arranged in an orderly manner in the order of M' layer, M” layer, M” layer, and M' layer.
[0009] In some embodiments, the high-entropy MAX phase material described above has a layered structure, which includes an MX layer and an A layer; wherein the MX layer is arranged in an orderly manner in the order of M' layer, M” layer, and M' layer.
[0010] In some implementations, the atoms of each element in the M” layer are randomly distributed in the M” layer.
[0011] In some embodiments, the particle size of the high-entropy MAX phase material is between 0.1 μm and 50 μm.
[0012] The second aspect of the present invention provides a method for preparing the above-mentioned high-entropy MAX phase material, comprising the following steps: 1) mixing elemental and / or compound elements M', M”, A and X in a molar ratio of 2:2:(1.05-1.5):3 or 2:1:(1.05-1.5):2 and ball milling to obtain a mixture; 2) heat-treating the mixture obtained in step 1) in an inert gas or vacuum.
[0013] In some embodiments, the heat treatment temperature is between 800°C and 1700°C; the heat treatment time is between 30 min and 600 min.
[0014] A third aspect of this invention provides a high-entropy MXene material, obtained by etching the A layer of the aforementioned high-entropy MAX phase material, with the chemical formula M'2M”2X3T. x , or, M'2M”X2T x Where M' represents at least one of chromium, molybdenum, or tungsten; M” is selected from at least five elements from groups IIIB, IVB, VB, and VIB; X is carbon; and T x Represents surface functional groups.
[0015] In some embodiments, the thickness of the high-entropy MXene material is between 1 nm and 100 nm.
[0016] In some embodiments, the aforementioned high-entropy MXene material has a hexagonal crystal structure.
[0017] In some embodiments, the functional groups of the above-mentioned high-entropy MXene material include at least one of -F, -Cl, Br, -I, -OH, -O, and -S.
[0018] The fourth aspect of the present invention provides a method for preparing the above-mentioned high-entropy MXene material, the steps of which include: etching the A layer therein of the above-mentioned high-entropy MAX phase material, wherein the etching agent selected for etching is selected from one or more of the following: halogen elements, halide hydrides, and halide metal salts.
[0019] In some embodiments, the etching agent is: hydrofluoric acid or an acid solution + fluoride salt system.
[0020] The fifth aspect of the present invention provides the above-mentioned high-entropy MAX phase material, or the above-mentioned high-entropy MXene material, in the application of anti-corrosion coatings, high-temperature coatings, nuclear radiation protection, catalysis, sensors, electronic devices, photocatalysis, supercapacitors, batteries, electromagnetic shielding, microwave absorbing materials or superconducting materials.
[0021] A sixth aspect of the present invention provides a coating comprising the above-described high-entropy MAX phase material and / or the above-described high-entropy MXene material.
[0022] This invention provides a novel high-entropy MAX phase material, belonging to a new class of materials. It has a layered structure and an out-of-plane ordered multi-component atomic composition. Etching the A component yields a novel high-entropy MXene material. Due to the presence of a rich variety of atomic components, this type of material can be endowed with new properties, enabling the regulation of material characteristics and exhibiting macroscopic physical features such as electromagnetic, optical, and acoustic properties that are not present in traditional materials. It has promising applications in anti-corrosion coatings, high-temperature coatings, nuclear radiation protection, catalysis, sensors, electronic devices, supercapacitors, batteries, electromagnetic shielding, microwave absorbing materials, and superconducting materials. Attached Figure Description
[0023] Figure 1 This is a schematic diagram of the structure of the out-of-plane ordered high-entropy MAX phase material of the present invention;
[0024] Figure 2 The high-entropy MAX phase material Mo2(Ti) in Example 3 of this invention 1 / 5 V 1 / 5 Zr 1 / 5 Nb 1 / 5 Ta 1 / 5 SEM image of 2AlC3;
[0025] Figure 3 The high-entropy MAX phase material Mo2(Ti) in Example 3 of this invention 1 / 5 V 1 / 5 Zr 1 / 5 Nb 1 / 5 Ta 1 / 5 XRD pattern of 2AlC3;
[0026] Figure 4 The high-entropy MAX phase material Mo2(Ti) in Example 3 of this invention 1 / 5 V 1 / 5 Zr 1 / 5 Nb 1 / 5 Ta 1 / 5 HAADF image of 2AlC3;
[0027] Figure 5 The high-entropy MAX phase material Mo2(Ti) in Example 3 of this invention 1 / 5 V 1 / 5 Zr 1 / 5 Nb 1 / 5 Ta 1 / 5 STEM-EDS image of 2AlC3;
[0028] Figure 6The high-entropy MXene material Mo2(Ti) in Example 4 of this invention 1 / 5 V 1 / 5 Zr 1 / 5 Nb 1 / 5 Ta 1 / 5 )2C3T x SEM images;
[0029] Figure 7 The high-entropy MXene material Mo2(Ti) in Example 4 of this invention 1 / 5 V 1 / 5 Zr 1 / 5 Nb 1 / 5 Ta 1 / 5 )2C3T x TEM images;
[0030] Figure 8 The high-entropy MXene material Mo2(Ti) in Example 4 of this invention 1 / 5 V 1 / 5 Zr 1 / 5 Nb 1 / 5 Ta 1 / 5 )2C3T x XRD patterns;
[0031] Figure 9 The high-entropy MXene material Mo2(Ti) in Example 4 of this invention 1 / 5 V 1 / 5 Zr 1 / 5 Nb 1 / 5 Ta 1 / 5 )2C3T x HRTEM images;
[0032] Figure 10 In Example 4 of this invention, the high-entropy MXene material Mo2(Ti) 1 / 5 V 1 / 5 Zr 1 / 5 Nb 1 / 5 Ta 1 / 5 )2C3T x The HAADF plot shows the Fast Fourier Transform (FFT) image, with the inset in the upper right corner.
[0033] Figure 11 The high-entropy MAX phase material Cr2(Ti) in Example 8 of this invention 1 / 5 V 1 / 5 Zr 1 / 5 Nb 1 / 5 Ta 1 / 5 AlC2 and the corresponding high-entropy MXene Cr2(Ti) 1 / 5 V 1 / 5 Zr 1 / 5 Nb 1 / 5 Ta1 / 5 C2T x XRD patterns. Detailed Implementation
[0034] The technical solution of the present invention will be described below with reference to the accompanying drawings and specific embodiments. It should be understood that one or more steps mentioned in the present invention do not preclude the existence of other methods and steps before or after the combined steps, or that other methods and steps may be inserted between these explicitly mentioned steps. It should also be understood that these examples are for illustrative purposes only and are not intended to limit the scope of the invention. Unless otherwise stated, the numbering of each method step is only for the purpose of identifying each method step, and not for limiting the order of each method or limiting the scope of the invention. Changes or adjustments to their relative relationships, without substantial changes to the technical content, can also be considered within the scope of the invention.
[0035] The raw materials and instruments used in the examples are not subject to any specific restrictions on their source; they can be purchased from the market or prepared according to conventional methods known to those skilled in the art.
[0036] Unless otherwise expressly stated, throughout the specification and claims, the term "comprising" or its variations such as "including" or "comprises" shall be understood to include the stated elements or components without excluding other elements or other components.
[0037] Example 1
[0038] This embodiment provides a high-entropy MAX phase material, whose chemical formula is represented as M'2M”2AX3 (413 phase) or M'2M”X2T. x (312 phase); wherein, M' represents at least one of chromium (Cr), molybdenum (Mo) or tungsten (W), M” is selected from at least five elements of group IIIB, IVB, VB and VIB, A is selected from at least one element of group IIIA, IVA, VA and VIA, and X is carbon.
[0039] In some embodiments, M” is selected from at least five elements selected from scandium (Sc), titanium (Ti), vanadium (V), yttrium (Y), zirconium (Zr), niobium (Nb), hafnium (Hf), tantalum (Ta), and all lanthanides.
[0040] In some embodiments, A is selected from at least one element selected from aluminum (Al), gallium (Ga), indium (In), lead (Pb), silicon (Si), germanium (Ge), tin (Sn), or sulfur (S).
[0041] The high-entropy MAX phase material of the present invention has a layered structure, including an MX layer and an A layer; wherein, the MX layers of M'2M”2AX3 (413 phase) are arranged in an ordered manner according to the sequence of M' layer, M” layer, M” layer, M' layer (e.g. Figure 1 (as shown in a); M'2M”X2T x In (312 phases), the MX layer is arranged in the order of M' layer, M” layer, M' layer (e.g., ...). Figure 1 (as shown in b). In the schematic diagram, layer M” is composed of M” element atoms, layer M' is composed of M' element atoms, and layer A is composed of A element atoms. Since the X atom is small, the depiction of the X atom is ignored in order to better represent the high entropy MAX characteristic of the present invention.
[0042] Etching the A layer in the high-entropy MAX phase material of this invention yields a novel high-entropy MXene material with a unique structure. The etchant can be selected from one or more of the following: halogen elements, halide hydrides, and halide metal salts; preferably, the etchant is hydrofluoric acid or an acid solution + fluoride salt system. The MXene material retains the ordered characteristics of the MX layer, and its surface functional groups are related to the type of etchant. Typically, etchants containing halogen elements are selected, and the surface of the MXene material contains halogen functional groups (such as -F, -Cl, -Br, -I, etc.). MXene materials etched using liquid-phase methods usually also contain hydrophilic oxygen-containing functional groups (such as -O, -OH, etc.).
[0043] Example 2
[0044] This embodiment provides a method for preparing the above-mentioned high-entropy MAX phase material, the steps of which include:
[0045] 1) Prepare raw materials, including: elemental and / or compound elements M', M”, A and X, mixed in a molar ratio of 2:2:(1.05~1.5):3, and ball-milled to obtain a mixture; wherein, preferably, the mixture is mixed in a ratio of 2:2:(1.05~1.5):3, with a slight excess of element A to compensate for the volatilization of the A phase during high-temperature sintering, so as to ensure that elements M' and M” react fully.
[0046] 2) The mixture obtained in step 1) is sintered at atmospheric pressure in an inert gas or vacuum.
[0047] In some embodiments, the ball-to-material mass ratio is between (1:1) and (30:1), the ball milling speed is between 50 and 600 r / min, and the ball milling time is between 1 and 120 h, so that the raw materials can be refined and fully mixed.
[0048] In some embodiments, the sintering temperature is between 800°C and 1700°C, and the sintering time is between 30 min and 600 min.
[0049] Example 3
[0050] This embodiment uses an out-of-plane ordered high-entropy MAX phase material Mo2(Ti) 1 / 5 V 1 / 5 Zr 1 / 5 Nb 1 / 5 Ta 1 / 5 Taking Mo2(Ti)2AlC3 as an example, the structural characteristics of the high-entropy MAX phase material of the present invention are explained. 1 / 5 V 1 / 5 Zr 1 / 5 Nb 1 / 5 Ta 1 / 5 The preparation steps of 2AlC3 include:
[0051] 1) Mix the raw materials molybdenum, titanium, vanadium, zirconium, niobium, tantalum, aluminum and graphite powders in a molar ratio of 2:2:1.1:3 and ball mill them. The ball-to-material mass ratio is 10:1, the ball milling speed is 300 r / min, and the ball milling time is 10 h.
[0052] 2) Place the ball-milled powder into the high-temperature reactor, introduce Ar gas into the high-temperature reactor, control the temperature inside the high-temperature reactor to rise to 1600℃ and keep it at that temperature for 8 hours, and take out the product after it cools naturally to room temperature.
[0053] 3) After grinding, refining, and dispersing the product, the high-entropy MAX phase material Mo2(Ti) of this invention is obtained. 1 / 5 V 1 / 5 Zr 1 / 5Nb 1 / 5 Ta 1 / 5 )2AlC3.
[0054] The obtained high-entropy MAX phase material was analyzed by scanning electron microscopy (SEM), and the results are as follows: Figure 2 As shown, the obtained high-entropy MAX phase material exhibits a layered bulk morphology, with particle sizes ranging from 0.1 μm to 50 μm. X-ray diffraction (XRD) analysis of the obtained high-entropy MAX phase material is shown in the following figures. Figure 3 As shown, the results indicate that the (002) peak is located at 7.5°, while the (002) peak of the MAX phase Mo2Ti2AlC3 is located at 7.8° and is weaker. The shift of the (002) peak to a lower angle in the high-entropy MAX phase indicates that the solid solution of metal atoms with larger atomic radii leads to the expansion of the (002) interlayer spacing, further verifying that the high-entropy MAX phase has a layered crystal structure. Moreover, Mo2(Ti 1 / 5 V1 / 5 Zr 1 / 5 Nb 1 / 5 Ta 1 / 5 )2AlC3.
[0055] Figure 4 Mo2(Ti) is given 1 / 5 V 1 / 5 Zr 1 / 5 Nb 1 / 5 Ta 1 / 5 Scanning transmission electron microscopy (STEM) analysis of 2AlC3 clearly shows Mo2(Ti) in its high-angle annular dark-field image (HAADF). 1 / 5 V 1 / 5 Zr 1 / 5 Nb 1 / 5 Ta 1 / 5 )2AlC3 has a layered structure, which can be verified by X-ray energy dispersive spectroscopy (EDS) for Mo2(Ti) 1 / 5 V 1 / 5 Zr 1 / 5 Nb 1 / 5 Ta 1 / 5 The elemental distribution of 2AlC3, such as Figure 5 As shown, there are four metal layers between two adjacent Al layers: the outer two are Mo layers, and the inner layers are Ti, V, Zr, Nb, and Ta metals. The thickness of the four metal layers is approximately 1 nm.
[0056] Example 4
[0057] This embodiment provides a method for using the high-entropy MAX phase material Mo2(Ti) from Example 3. 1 / 5 V 1 / 5 Zr 1 / 5 Nb 1 / 5 Ta 1 / 5 The high-entropy MXene material obtained by etching Al with AlC3 includes the following preparation steps:
[0058] 1) Powdered Mo2(Ti 1 / 5 V 1 / 5 Zr 1 / 5 Nb 1 / 5 Ta 1 / 5 )2AlC3 is mixed with etchant HF to obtain a mixed solution;
[0059] 2) Heat and stir the above mixed solution at 55°C for 90 hours;
[0060] 3) After the solution is stirred, filter and wash it, mix it with tetrabutylammonium hydroxide (TBAOH), shake by hand for 10 minutes, add deionized water to peel it off, and then filter to remove the liquid to obtain the intermediate product.
[0061] 4) Add water to the above intermediate product, centrifuge at 3000 rpm for 10 min, collect the supernatant, filter, and freeze-dry the resulting powder to obtain the final product Mo2(Ti). 1 / 5 V 1 / 5 Zr 1 / 5 Nb 1 / 5 Ta 1 / 5 )2C3T x .
[0062] For Mo2(Ti 1 / 5 V 1 / 5 Zr 1 / 5 Nb 1 / 5 Ta 1 / 5 )2C3T x Perform SEM analysis, such as Figure 6 As shown in the image, its morphology exhibits a distinct ultrathin two-dimensional structure, as illustrated in the transmission electron microscope (TEM) image. Figure 7 As shown, its ultrathin two-dimensional structure is also verified. This demonstrates that steps (2) and (3) successfully etched and stripped the high-entropy MAX phase.
[0063] For Mo2(Ti 1 / 5 V 1 / 5 Zr 1 / 5 Nb 1 / 5 Ta 1 / 5 )2C3T x Perform XRD analysis, such as Figure 8 As shown, Mo2(Ti 1 / 5 V 1 / 5 Zr 1 / 5Nb 1 / 5 Ta 1 / 5 )2C3T x The (002) diffraction peak, from Mo2(Ti 1 / 5 V 1 / 5 Zr 1 / 5 Nb 1 / 5 Ta 1 / 5 The 7.5° of 2AlC3 shifted to the left to 5.2° because the Al element was reacted off during the etching process, forming lamellar Mo2(Ti). 1 / 5 V 1 / 5 Zr 1 / 5 Nb 1 / 5 Ta 1 / 5 )2C3T x (High-entropy MXene) leads to increased interlayer spacing. For Mo2(Ti) 1 / 5 V 1 / 5 Zr 1 / 5 Nb 1 / 5 Ta 1 / 5 )2C3T x Perform high-resolution transmission electron microscopy (HRTEM) analysis, such as Figure 9 As shown, its (100) interplanar spacing is 0.26 nm. For Mo2(Ti) 1 / 5 V 1 / 5 Zr 1 / 5 Nb 1 / 5 Ta 1 / 5 )2C3T x Scanning transmission electron microscopy (STEM) analysis was performed, and its high-angle annular dark field image (HAADF) was obtained, such as... Figure 10 As shown, the Fast Fourier Transform (FFT) plot in the upper right corner proves that Mo2(Ti) 1 / 5 V 1 / 5 Zr 1 / 5 Nb 1 / 5 Ta 1 / 5 )2C3T x It has good crystallinity and a hexagonal structure.
[0064] Example 5
[0065] This embodiment provides another out-of-plane ordered high-entropy MAX phase material Cr2(Ti). 1 / 5 V 1 / 5 Zr 1 / 5 Nb 1 / 5 Ta 1 / 5 )2AlC3, the preparation method is similar to that in Example 3, except that the molybdenum powder in the raw material is replaced with chromium powder, and the temperature inside the high-temperature reactor is raised to 1800℃ and kept at that temperature for 8 hours.
[0066] After etching the Al elements with an etchant, out-of-plane ordered MXene material Cr2(Ti) can be obtained. 1 / 5 V 1 / 5Zr 1 / 5 Nb 1 / 5 Ta 1 / 5 )2C3T x .
[0067] Example 6
[0068] This embodiment provides another out-of-plane ordered high-entropy MAX phase material, W2(Ti). 1 / 5 V 1 / 5 Zr 1 / 5 Nb 1 / 5 Ta 1 / 5 )2AlC3, the preparation method is similar to that in Example 3, except that the molybdenum powder in the raw material is replaced with tungsten powder, and the temperature inside the high-temperature reactor is raised to 1800℃ and kept at that temperature for 8 hours.
[0069] After etching the Al elements with an etchant, an out-of-plane ordered MXene material W2(Ti) can be obtained. 1 / 5 V 1 / 5Zr1 / 5 Nb 1 / 5 Ta 1 / 5 )2C3T x .
[0070] Example 7
[0071] This embodiment provides another out-of-plane ordered high-entropy MAX phase material, Mo2(Ti). 1 / 5 V 1 / 5 Zr 1 / 5 Nb 1 / 5 Ta 1 / 5 AlC2 was prepared in a similar manner to that in Example 3, except that the molar ratio of molybdenum, titanium, vanadium, zirconium, niobium, tantalum, aluminum and graphite powders was 2:1:1.3:2, and the temperature inside the high-temperature reactor was raised to 1500°C and held for 10 hours.
[0072] After etching the Al elements with an etchant, out-of-plane ordered MXene material Mo2(Ti) can be obtained. 1 / 5 V 1 / 5Zr 1 / 5 Nb 1 / 5 Ta 1 / 5 C2T x .
[0073] Example 8
[0074] This embodiment provides another out-of-plane ordered high-entropy MAX phase material Cr2(Ti). 1 / 5 V 1 / 5 Zr 1 / 5 Nb 1 / 5 Ta 1 / 5 AlC2, its preparation method is similar to that in Example 3, except that the molybdenum powder in the raw materials is replaced with chromium powder, and the molar ratio of chromium, titanium, vanadium, zirconium, niobium, tantalum, aluminum and graphite powders is 2:1:1.1:2. The temperature inside the high-temperature reactor is raised to 1500℃ and held for 1 hour. Figure 11 As shown, characteristic peaks corresponding to the MAX phase appeared in the raw materials, indicating that the high-entropy MAX phase was successfully prepared.
[0075] After etching the Al element with an etchant, such as Figure 11 As shown, the (002) peak of the original high-entropy MAX phase disappeared, and a (002) peak corresponding to MXene appeared at 6.8°, indicating that out-of-plane ordered MXene material Cr2(Ti) can be obtained through etching. 1 / 5 V 1 / 5 Zr 1 / 5 Nb 1 / 5 Ta 1 / 5 C2T x .
[0076] Example 9
[0077] This embodiment provides a protective coating. The multi-component MAX phase material of the present invention is ground and refined, added to a liquid matrix, mixed evenly, and then coated onto the liquid matrix to form a film. After curing, a coating containing MAX phase material is obtained, which can be used as a thermal barrier coating, anti-corrosion coating, or electromagnetic shielding coating, etc.
[0078] The high-entropy MXene material of the present invention is added to a liquid matrix to obtain a protective coating containing high-entropy MXene material. The two-dimensional MXene material can form an ultra-thin protective film in the coating, and can also be used as a thermal barrier coating, anti-corrosion coating or electromagnetic shielding coating, etc.
[0079] The foregoing description of specific exemplary embodiments of the invention is for illustrative and explanatory purposes. These descriptions are not intended to limit the invention to the precise forms disclosed, and it will be apparent that many changes and variations can be made in accordance with the foregoing teachings. The exemplary embodiments were chosen and described in order to explain the specific principles of the invention and its practical application, thereby enabling those skilled in the art to implement and utilize various different exemplary embodiments of the invention, as well as various different choices and variations. The scope of the invention is intended to be defined by the claims and their equivalents.
Claims
1. A high-entropy MAX phase material, characterized in that, The chemical formula of the high-entropy MAX phase material is represented as M'2M''2AX3, or M'2M''AX2; wherein M' represents at least one of chromium, molybdenum, or tungsten; A is selected from at least one of aluminum, gallium, indium, lead, silicon, germanium, tin, or sulfur; M'' is selected from at least five elements selected from scandium, titanium, vanadium, yttrium, zirconium, niobium, hafnium, tantalum, and all lanthanides; and X is carbon. The high-entropy MAX phase material has a layered structure, which includes an MX layer and an A layer; wherein the MX layer is arranged in an orderly manner in the order of M' layer, M'' layer, M'' layer, M' layer; or, the MX layer is arranged in an orderly manner in the order of M' layer, M'' layer, M' layer.
2. The high-entropy MAX phase material of claim 1, wherein, The atoms of each element in the M'' layer are randomly distributed in the M'' layer; And / or, the particle size of the high-entropy MAX phase material is between 0.1 μm and 50 μm.
3. A method of producing a high-entropy MAX phase material according to claim 1 or 2, characterized by the steps of include: 1) M ’ Element, M ’’ The element, element A, and element X are mixed in a molar ratio of 2:2:(1.05~1.5):3 or 2:1:(1.05~1.5):2, and then ball-milled to obtain a mixture. 2) Heat-treat the mixture obtained in step 1) in an inert gas or vacuum.
4. The production method according to claim 3, wherein The heat treatment temperature is between 800°C and 1700°C, and the heat treatment time is between 30 min and 600 min.
5. A high-entropy MXene material, characterized in that, obtained by etching the A layer in the high-entropy MAX phase material as claimed in claim 1 or 2, and its chemical formula is M'2M''2X3T x , or M'2M''X2T x ; T x represents a functional group.
6. The high-entropy MXene material of claim 5, wherein, The thickness of the high-entropy MXene material is between 1 nm and 100 nm. And / or, the high-entropy MXene material has a hexagonal crystal structure; And / or, the functional group includes at least one of -F, -Cl, -Br, -I, -OH, -O, and -S.
7. A method of producing a high-entropy MXene material as claimed in claim 5 or 6, characterised by the steps of include: The A layer of the high-entropy MAX phase material as described in claim 1 or 2 is obtained by etching, wherein the etching agent selected is one or more of the following: halogen elements, halide hydrides, and halide metal salts.
8. The production method according to claim 7, wherein The etching agent is hydrofluoric acid, or an acid solution + fluoride salt system.
9. The use of a high-entropy MAX phase material as described in claim 1 or 2, or a high-entropy MXene material as described in claim 5 or 6, in anti-corrosion coatings, high-temperature coatings, nuclear radiation protection, catalysis, sensors, electronic devices, photocatalysis, supercapacitors, batteries, electromagnetic shielding, microwave absorbing materials, or superconducting materials.
10. A coating characterized in that, Contains the high-entropy MAX phase material as described in claim 1 or 2 and / or the high-entropy MXene material as described in claim 5 or 6.
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