Display device and method for controlling light emitting elements using memristors

Abstract

A display device and method for controlling a light emitting element using a memristor are provided. According to an aspect of the present invention, a display driving device includes a light emitting unit including a light emitting element, a driving unit including a memristor for driving the light emitting unit, and a switching unit including a switching thin film transistor for determining whether to apply a data voltage to the driving unit according to a scan voltage.

Description

[0001] This invention originated from research conducted as part of the Ministry of Science and ICT's Basic Research (R&D) project (Project Identifier: 1711112266, Project Identifier: 2016R1A3B1908249, Project Title: Research on High-Efficiency Optoelectronic Components Based on Glass Transparent Electrodes, Supervising Unit: Korea National Research Foundation, Research Period: March 1, 2020 to February 28, 2021). Technical Field

[0002] This invention relates to a display device and method for controlling light-emitting elements using a memristor. Background Technology

[0003] There are two types of display driving methods: passive matrix (PM) and active matrix (AM). Passive driving uses intersecting data lines and scan lines, forming an nxn matrix as the number of lines increases. At each intersection of the data and scan lines, there is a light-emitting element (pixel). As a voltage signal is applied sequentially to the scan and data lines, the current to the light-emitting element is generated by the voltage difference between the two lines, resulting in light emission from the current-flowing portion. Therefore, passive driving offers advantages in structure and manufacturing, requiring no additional components and resulting in low cost. However, since pixels operate on a row-by-row basis, the operation time per pixel decreases as the number of rows increases, leading to a degradation in image quality and brightness. Furthermore, as the number of rows increases, the distance between adjacent pixels decreases, resulting in crosstalk (e.g., image overlap), a critical problem for display devices. Therefore, it can be seen that passive driving is only suitable for image quality at the SVGA level (800×600) or lower, and is not suitable for expressing rapidly changing image information, such as video.

[0004] Therefore, active driving is used for high-resolution displays or videos that require fast-moving images. Active driving operates on a "2T 1C" structure, consisting of a thin-film transistor (TFT, T1) acting as a switch for each pixel, a capacitor (C) acting as information storage, and a driving transistor (T2) controlling the current flowing through the pixel. Even after a scan signal passes, pixel emission is maintained for one frame at a time. In this active driving method, because each pixel is driven individually on a frame-by-frame basis, high brightness can be achieved without increasing power consumption, even when driving high-resolution displays, even if the number of rows increases or the pixel size and spacing decreases.

[0005] However, in realizing micro-LED displays, recently hailed as next-generation displays, there is a problem of ensuring space for driving units (e.g., display panels) due to the scaling down of light-emitting units (e.g., micro-LED light sources). In other words, for active driving, the area of ​​the "2T 1C" structure connected to each pixel must be reduced to accommodate the size of the micro-LED. In the case of transistors, this involves a complex structure with three terminals, and in the case of capacitors, sufficient area (space) must be ensured to guarantee a specific capacitance. However, as the size decreases, the area decreases, making it impossible to obtain sufficient capacitance values. Of course, it is well known that processes with patterns of several nanometers can be achieved in the memory semiconductor industry, requiring cutting-edge technology such as state-of-the-art equipment (e.g., EUV processes). However, in display processes, processes below several micrometers have not been performed until now. Therefore, if smaller-size processes are to be implemented, a catastrophic process is required to replace all current infrastructure. In other words, micro-LED displays with small-sized (~several micrometers) light-emitting units require a new concept driving unit circuit structure that is simpler and requires less space than the "2T 1C" structure. Summary of the Invention

[0006] The technical problem that the invention aims to solve

[0007] An embodiment of the present invention aims to provide a display driving device and method, which provides an active display driving circuit that uses memristor elements to minimize size and simplify structure.

[0008] On the other hand, it should be understood that the technical problem to be solved by the present invention is not limited to the above-mentioned technical problem. Other technical problems not mentioned will become clear to those skilled in the art through the following description.

[0009] Technical solutions for solving the problem

[0010] According to one aspect of the present invention, a display driving device may be provided, comprising: a light-emitting unit including a light-emitting element; a driving unit including a memristor for driving the light-emitting unit; and a switching unit including a switching thin-film transistor for determining whether to apply a data voltage to the driving unit based on a scan voltage.

[0011] Furthermore, a display driving device can be provided, wherein the driving unit is configured to be connected to a first node, the first node being branched into the light-emitting unit and the switching unit.

[0012] Furthermore, a display driving device can be provided, wherein the switching unit is configured to be connected to: the first node; the gate line for receiving a scan voltage; and the data line for receiving a data voltage.

[0013] Furthermore, a display driving device can be provided, wherein the switching unit is configured to apply the data voltage input from the data line to the first node when the scan voltage is input from the gate line.

[0014] Furthermore, a display driving device can be provided, wherein the light-emitting unit is configured to be connected to: the first node; and a high-potential voltage supply line for receiving a high-potential voltage.

[0015] Furthermore, a display driving device can be provided, wherein the data voltage that can be applied to the data line is any one of the following voltages: a setting voltage for switching the memristor from a high-resistance state to a low-resistance state; and a reset voltage for switching the memristor from a low-resistance state to a high-resistance state.

[0016] Furthermore, a display driving device can be provided, wherein the driving unit is configured such that: when the set voltage is applied to the first node, the light-emitting unit is not driven and the memristor switches to a low-resistance state; when the data voltage is not applied to the first node, the light-emitting unit is driven; and when the reset voltage is applied to the first node, the light-emitting unit is not driven and the memristor switches to a high-resistance state.

[0017] Furthermore, a display driving device can be provided, wherein the set voltage is greater than the difference between the high potential voltage and the driving voltage of the light-emitting element, and the set voltage is less than the high potential voltage.

[0018] Furthermore, a display driving device can be provided in which the reset voltage is greater than the difference between the high potential voltage and the driving voltage of the light-emitting element, and the reset voltage is less than the set voltage.

[0019] Furthermore, the switching unit may include a first switching unit and a second switching unit, the gate line includes a first gate line for applying a scan voltage for the operation of the first switching unit and a second gate line for applying a scan voltage for the operation of the second switching unit, and the data line includes a first data line for applying a setting voltage and a second data line for applying a reset voltage.

[0020] The first switching unit can be configured to be connected to: the first node; the first gate line; and the first data line.

[0021] The second switching unit can be configured to be connected to: the first node; the second gate line; and the second data line.

[0022] According to another aspect of the present invention, a display driving method can be provided, which is performed by the display driving device, characterized by comprising the following steps: step (a), applying a high potential voltage to a high potential voltage supply line; step (b), applying a scan voltage to a gate line, the scan voltage being a voltage used to turn on a switching unit; step (c), applying a setting voltage to a data line, the setting voltage being a voltage used to switch a driving unit from a high resistance state to a low resistance state; step (d), removing the scan voltage applied to the gate line to turn off the switching unit; step (e), removing the high potential voltage applied to the high potential voltage supply line; step (f), applying a scan voltage to the gate line, the scan voltage being a voltage used to turn on the switching unit; step (g), applying a reset voltage to the data line, the reset voltage being a voltage used to switch the driving unit from a low resistance state to a high resistance state; and step (h), removing the scan voltage applied to the gate line and the reset voltage applied to the data line.

[0023] According to another aspect of the present invention, a display driving method can be provided, which is executed by the display driving device, characterized by comprising the following steps: step (a), applying a high potential voltage to a high potential voltage supply line; step (b), applying a scan voltage to a first gate line, the scan voltage being a voltage used to turn on a first switching unit; step (c), applying a setting voltage to a first data line, the setting voltage being a voltage used to switch a driving unit from a high resistance state to a low resistance state; step (d), removing the scan voltage applied to the first gate line to turn off the first switching unit; step (e), removing the high potential voltage applied to the high potential voltage supply line; step (f), applying a scan voltage to a second gate line, the scan voltage being a voltage used to turn on a second switching unit; step (g), applying a reset voltage to a second data line, the reset voltage being a voltage used to switch a driving unit from a low resistance state to a high resistance state; and step (h), removing the scan voltage applied to the second gate line and the reset voltage applied to the second data line.

[0024] The effects of the invention

[0025] An embodiment of the display driving device and method of the present invention can provide an active display driving circuit that uses memristor elements to minimize size and simplify structure.

[0026] Furthermore, by utilizing the micro-cavity resonance effect to amplify the light generated from the micro LED light-emitting element, the light extraction effect can be maximized. Attached Figure Description

[0027] Figure 1 The accompanying drawing shows an existing display driver 9.

[0028] Figure 2 The accompanying drawings illustrate the step-by-step operation of the existing display driver 9.

[0029] Figure 3 The accompanying drawings illustrate a display driving device 10a according to a first embodiment of the present invention, using the light-emitting unit 100, the driving unit 200, and the switching unit 300.

[0030] Figure 4 The accompanying drawings show the display driving device 10a according to the first embodiment of the present invention in more detail.

[0031] Figure 5 A graph showing the relationship between voltage and current in memristor 210.

[0032] Figure 6 The accompanying drawings illustrate the operation of the display driving device 10a according to the first embodiment of the present invention, step by step.

[0033] Figure 7a A graph showing the electrical characteristics of a light-emitting element 110 provided with an LED of 30 micrometer size.

[0034] Figure 7b A graph showing the electrical characteristics of a light-emitting element 110 provided with an LED of 50 micrometer size.

[0035] Figure 7c A graph showing the electrical characteristics of a light-emitting element 110 provided with an LED of 100 micrometer size.

[0036] Figure 8 A graph showing the resistance range required for memristor 210 when using a 30-micron-sized microLED as the light-emitting element 110.

[0037] Figure 9 A graph showing the required resistance range of memristor 210 when using a 50-micron-sized microLED as the light-emitting element 110.

[0038] Figure 10 A graph showing the required resistance range of memristor 210 when using a 100-micron-sized microLED as the light-emitting element 110.

[0039] Figure 11 This is a flowchart illustrating the display driving method S10a of the first embodiment of the present invention.

[0040] Figure 12 The accompanying drawings show the display driving device 10b of the second embodiment of the present invention, which is shown through the light-emitting unit 100, the driving unit 200, the first switching unit 300a and the second switching unit 300b.

[0041] Figure 13 The accompanying drawings show the display driving device 10b according to the second embodiment of the present invention in more detail.

[0042] Figure 14 The accompanying drawings illustrate the operation of the display driving device 10b according to the second embodiment of the present invention, step by step.

[0043] Figure 15 This is a flowchart illustrating the display driving method S10b of the second embodiment of the present invention. Detailed Implementation

[0044] The specific embodiments of the present invention will now be described in detail with reference to the accompanying drawings.

[0045] In describing this invention, if it is determined that a detailed description of a related known configuration or function would obscure the gist of the invention, a detailed description thereof will be omitted.

[0046] The embodiments of the present invention are provided to explain the invention more fully to those skilled in the art, and the following embodiments can be modified in many different forms, and the scope of the present invention is not limited to the following embodiments.

[0047] Furthermore, these embodiments are provided to make this disclosure thorough and complete, and to fully convey the spirit of the invention to those skilled in the art.

[0048] Furthermore, for ease of explanation and clarity, each component in the following figures has been exaggerated, and the same reference numerals refer to the same elements in the figures. The term "and / or" as used in this specification includes any one or more of the listed items and all combinations thereof.

[0049] The terminology used in this specification is for describing specific embodiments and is not intended to limit the invention.

[0050] The singular forms used in this specification may include the plural forms unless the context clearly indicates otherwise. Furthermore, the terms "comprise" and / or "comprising" as used in this specification specify the presence of the listed shapes, numbers, steps, operations, parts, elements, and / or combinations thereof, but do not preclude the presence or addition of one or more other shapes, numbers, steps, operations, parts, elements, and / or combinations thereof.

[0051] Figure 1 The accompanying drawings show the existing display driver 9. Figure 2 The accompanying drawings illustrate the step-by-step operation of the existing display driver 9.

[0052] Reference Figure 1 The existing display driving device 9 includes: a light-emitting element 110 included in the light-emitting unit 100, a driving thin-film transistor 220 and a storage capacitor 230 included in the driving unit 200, and a switching thin-film transistor 310 included in the switching unit 300.

[0053] Reference Figure 2 The existing display driver 9 operates through steps 1 to 6.

[0054] First, a high potential voltage 41 is applied through the high potential voltage supply line 40 (step 1).

[0055] Next, a scan voltage 21 that enables the switching thin-film transistor 310 to be turned on is applied to the gate terminal of the switching thin-film transistor 310 through the gate line 20 (step 2).

[0056] Next, a data voltage 31 capable of turning on the driving thin-film transistor 220 is applied to the gate terminal of the driving thin-film transistor 220 via the data line 30 (step 3). At this time, the amount of current that can flow through the driving thin-film transistor 220 is determined based on the voltage value of the data voltage 31 applied to the driving thin-film transistor 220, and the brightness of the light-emitting element 110 can be determined accordingly.

[0057] Next, the scan voltage 21 applied to the gate terminal of the switching thin-film transistor 310 is removed to turn off the switching thin-film transistor 310 (step 4).

[0058] Next, the amount of charge stored in the storage capacitor 230 is applied to the gate terminal of the driving thin-film transistor 220, causing current to flow through the driving thin-film transistor 220 (step 5). At this time, the amount of charge stored in the storage capacitor 230 can be the amount of charge that enables the driving thin-film transistor 220 to conduct for one frame.

[0059] Finally, the high potential voltage 41 applied through the high potential voltage supply line 40 is removed.

[0060] The existing display driver 9 enables the light-emitting element 110 to operate for one frame through the above steps 1 to 6.

[0061] However, recently, micro-light-emitting elements with a size of several micrometers have been used as light-emitting elements 110. Therefore, micro-displays using these micro-light-emitting elements require driving circuits with simpler structures and smaller footprints.

[0062] To meet this requirement, one embodiment of the display driving device 10a, 10b of the present invention proposes to replace the circuit of the driving thin film transistor 220 and the storage capacitor 230 included in the driving unit 200 with a memristor 210.

[0063] Figure 3 This diagram illustrates the display driving device 10a according to the first embodiment of the present invention, through the light-emitting unit 100, the driving unit 200, and the switching unit 300. Figure 4 This is a diagram showing in more detail the display driving device 10a according to the first embodiment of the present invention.

[0064] Reference Figure 3 and Figure 4 Similar to the existing display driver 9, the display driver 10a includes a light-emitting unit 100, a driving unit 200, and a switching unit 300. However, in the case of the driving unit 200, the existing display driver 9 includes a driving thin-film transistor 220 and a storage capacitor 230, while the display driver 10a includes a memristor 210, thus there is a difference.

[0065] The memristor 210 is a component that simultaneously has the characteristics of a storage capacitor 230, as included in a conventional display driver 9, which maintains the amount of current flowing through it for one frame, and the characteristics of a driving thin-film transistor 220, as included in a conventional display driver 9, which regulates the amount of current.

[0066] That is, the present invention can use a memristor 210, which has the characteristics of maintaining the amount of current flowing for one frame and regulating the amount of current, to replace the driving thin film transistor 220 and storage capacitor 230 of the existing display driving device 9.

[0067] Figure 5 A graph showing the relationship between voltage and current in memristor 210.

[0068] Reference Figure 5 It can be confirmed that the memristor 210 has the characteristic of regulating the current.

[0069] Memristor 210 has a set voltage and a reset voltage. The set voltage is used to change the memristor 210 from a high-resistance state to a low-resistance state, and the reset voltage is used to change the memristor 210 from a low-resistance state to a high-resistance state.

[0070] For example, in Figure 5 In the case of memristor 210, it can be confirmed that when the voltage is less than 2.6V, a current of 10^-4A flows, and when the voltage exceeds 2.6V, a current of 10^-3A flows. This means that the resistance of memristor 210 changes from a high-resistance state to a low-resistance state, therefore... Figure 5 The memristor 210 has a set voltage of 2.6V.

[0071] Conversely, as described above, after the set voltage is input to the memristor 210 to transition it to a low-resistance state, no voltage is applied for a period of time, and then a voltage less than 1.2V is applied to the memristor 210, a current of approximately 10^-3A flows. Subsequently, it can be confirmed that when the voltage exceeds 1.2V, a current of 10^-4A flows. This means that the resistance of the memristor 210 changes from a low-resistance state to a high-resistance state, therefore... Figure 5 The memristor 210 has a reset voltage of 1.2V.

[0072] As can be seen, the memristor 210 has a set voltage for transitioning from a high resistance state to a low resistance state and a reset voltage for transitioning from a low resistance state to a high resistance state, and has the characteristic of maintaining the previously stored resistance value until the voltage applied to the memristor 210 reaches the set voltage or the reset voltage.

[0073] The structure of the display driving device 10a of the first embodiment of the present invention, which includes a memristor 210 having such characteristics, will be described in more detail.

[0074] The light-emitting unit 100 includes a light-emitting element 110.

[0075] The driving unit 200 includes a memristor 210 for driving the light-emitting unit 100.

[0076] The switching unit 300 includes a switching thin-film transistor 310, which determines whether to apply the data voltage 31 to the driving unit 200 based on the scan voltage 21.

[0077] One end of the driving unit 200 can be connected to the first node 11, and the other end can be connected to GND (ground). The first node 11 refers to the node connected to the light-emitting unit 100, the driving unit 200 and the switching unit 300. As shown in the figure, the driving unit 200 can be configured to be connected to the first node 11, which branches into the light-emitting unit 100 and the switching unit 300.

[0078] For example, the driving unit 200 may include a memristor 210, so one end of the memristor 210 may be connected to the first node 11 and the other end may be connected to GND (ground).

[0079] The switching unit 300 can be configured to be connected to: a first node 11, a gate line 20 for receiving a scan voltage 21, and a data line 30 for receiving a data voltage 31.

[0080] For example, the switching unit 300 may include a switching thin-film transistor 310, so the gate terminal of the switching thin-film transistor 310 may be connected to the gate line 20, the drain terminal may be connected to the first node 11, and the source terminal may be connected to the data line 30.

[0081] Since the switching thin-film transistor 310 is included in the switching unit 300, the switching unit 300 can be configured to apply the data voltage 31 input from the data line 30 to the first node 11 when the scan voltage 21 is input from the gate line 20.

[0082] The light-emitting unit 100 can be configured to be connected to: the first node 11 and the high-potential voltage supply line 40 for receiving the high-potential voltage 41.

[0083] For example, the light-emitting unit 100 may include a light-emitting element 110, so the light-emitting element 110 may be connected to the first node 11 and the high-potential voltage supply line 40.

[0084] Figure 6 This diagram illustrates the operation of the display driving device 10a according to the first embodiment of the present invention, step by step.

[0085] Reference Figure 4 and Figure 6 The display driving device 10a of the first embodiment of the present invention operates through steps 1 to 9.

[0086] First, a high potential voltage 41 is applied through the high potential voltage supply line 40 (step 1). At this time, the memristor 210 can be in a high resistance state.

[0087] Next, a scan voltage 21 that enables the switching thin-film transistor 310 to be turned on is applied to the gate terminal of the switching thin-film transistor 310 through the gate line 20 (step 2).

[0088] Next, a setting voltage is applied to the data line 30, which is a voltage that can switch the memristor 210 to a low-resistance state (step 3).

[0089] The data voltage 31 that can be applied to the data line 30 can be any of the following voltages: a voltage that can change the memristor 210 from a high resistance state to a low resistance state, i.e., a set voltage, and a voltage that can change the memristor 210 from a low resistance state to a high resistance state, i.e., a reset voltage.

[0090] As described above, in step 3, the set voltage from the set voltage and reset voltage is applied as the data voltage 31. Since the switching thin-film transistor 310 is turned on, the set voltage can be applied to the first node 11.

[0091] At this time, the voltage value of the set voltage applied to the memristor 210 can be set to a different value in each memristor 210.

[0092] However, the set voltage value in step 3 of the present invention can be set to be greater than the difference between the high potential voltage 41 value and the driving voltage value of the light-emitting element 110, and less than the high potential voltage 41 value. This is to prevent the light-emitting element 110 from being driven when the set voltage is applied to the first node 11.

[0093] For example, when the high potential voltage 41 is 5V and the driving voltage of the light-emitting element 110 is 2.8V, the set voltage can be from 2.2V to 5V.

[0094] Next, the scan voltage 21 applied to the gate terminal of the switching thin-film transistor 310 is removed to turn off the switching thin-film transistor 310 (step 4). At this time, the current generated by the high potential voltage 41 flows along the light-emitting element 110 and the memristor 210.

[0095] Next, using a memristor 210 that has the characteristic of holding the amount of current flowing through it for one frame, the current flows through the light-emitting element 110 and the memristor 210 for one frame (step 5). At this time, the amount of charge stored in the memristor 210 can be the amount of charge that allows the current to flow through the light-emitting element 110 and the memristor 210 for one frame.

[0096] When the switching thin-film transistor 310 is turned off, the current generated by the high potential voltage 41 can flow along the light-emitting element 110 and the memristor 210 to GND (ground), causing the light-emitting element 110 to emit light.

[0097] The set voltage applied in step 3 can switch the memristor 210 to a low-resistance state. Depending on the resistance value of the memristor 210 in the low-resistance state, the brightness of the light-emitting element 110 may vary.

[0098] That is, the amount of current flowing in the light-emitting element 110 varies according to the resistance value in the low-resistance state of the memristor 210, thereby adjusting the brightness of the light-emitting element 110. For this purpose, the low-resistance state of the memristor 210 should be provided as multi-level states. Therefore, for example, a multi-level resistive random-access memory (ReRAM) element can be used as the memristor 210.

[0099] Figure 7a A graph showing the electrical characteristics of the light-emitting element 110 provided by an LED with a size of 30 micrometers, Figure 7b A graph showing the electrical characteristics of the light-emitting element 110 provided by an LED with a size of 50 micrometers, Figure 7c A graph showing the electrical characteristics of a light-emitting element 110 provided with an LED of 100 micrometer size.

[0100] Reference Figures 7a to 7c Micro-LEDs with sizes of 30 micrometers, 50 micrometers, and 70 micrometers were used as light-emitting elements 110. The change in current value of each light-emitting element 110 with voltage value was observed. In the three cases, the current changed significantly with voltage values ​​from 2.2V to 4V, which means that the brightness of the light-emitting element 110 can be easily adjusted within the range of 2.2V to 4V.

[0101] Figure 8 To illustrate the required resistance range of memristor 210 when using a 30-micron-sized microLED as the light-emitting element 110, Figure 9 To illustrate the required resistance range of memristor 210 when using a 50-micron-sized microLED as the light-emitting element 110, Figure 10 A graph showing the required resistance range of memristor 210 when using a 100-micron-sized microLED as the light-emitting element 110.

[0102] Refer to Figure 7 to Figure 10 It is known that when 5V is provided as the high potential voltage 41, the brightness of the light-emitting element 110 can be easily adjusted in the range of 2.2V to 4V. Therefore, the voltage allocated to the memristor 210 is preferably 1V to 2.2V.

[0103] Therefore, as Figures 8 to 10As shown, when a 30-micrometer-sized microLED is used as the light-emitting element 110, the resistance of the memristor 210 is preferably 0.5 to 150 kΩ; when a 50-micrometer-sized microLED is used as the light-emitting element 110, the resistance of the memristor 210 is preferably 0.5 to 4 kΩ; and when a 100-micrometer-sized microLED is used as the light-emitting element 110, the resistance of the memristor 210 is preferably 0.5 to 500 kΩ.

[0104] Return to reference Figure 6 Next, the high potential voltage 41 applied through the high potential voltage supply line 40 is removed (step 6).

[0105] Next, a scan voltage 21 that enables the switching thin-film transistor 310 to be turned on is applied to the gate terminal of the switching thin-film transistor 310 through the gate line 20 (step 7).

[0106] Next, a reset voltage is applied to the data line 30, which is a voltage that can switch the memristor 210 to a high-resistance state (step 8).

[0107] The reset voltage applied to memristor 210 can be set to a different value in each memristor 210.

[0108] However, the reset voltage value in step 8 of the present invention should be greater than the difference between the high potential voltage 41 and the driving voltage of the light-emitting element 110. This is to prevent the memristor 210 from being unintentionally reset due to the voltage allocated to the memristor 210.

[0109] For example, when the high potential voltage 41 is 5V and the driving voltage of the light-emitting element 110 is 2.8V to 4V, a voltage of at least 1V to a maximum of 2.2V is applied to the memristor 210. If the reset voltage is less than 2.2V, the memristor 210 may be unintentionally reset due to its voltage. Therefore, the reset voltage of the memristor 210 should be greater than the difference between the high potential voltage 41 and the driving voltage of the light-emitting element 110.

[0110] And, as Figure 5 As shown, the reset voltage should be set to be less than the set voltage in step 3.

[0111] As described above, when the data voltage 31 applied to the data line 30 in step 8 is a reset voltage, the memristor 210 switches back to a high-resistance state.

[0112] Finally, the scan voltage 21 applied to the gate terminal of the switching thin-film transistor 310 is removed to turn off the switching thin-film transistor 310 (step 9).

[0113] By using steps 1 to 9, even if the memristor 210 is used instead of the driving thin-film transistor 220 and the storage capacitor 230, the light-emitting element 110 can still operate for one frame.

[0114] Compare Figure 2 The working process of the existing display driver 9 in the middle and Figure 6 As can be seen from the working process of the display driver 10a, it is related to... Figure 2 Compared to the previous version, steps 7 to 9 have been added.

[0115] However, since the memristor 210 can operate even for tens of nanoseconds (sec), considering the operating speed of a conventional display with a scanning speed of 60 Hz per second (tens of milliseconds), the addition of steps 7 to 9 obviously will not cause any problems.

[0116] Figure 11 This is a flowchart illustrating the display driving method S10a of the first embodiment of the present invention.

[0117] Reference Figure 11 The display driving method S10a of the first embodiment of the present invention includes steps S100a to S800a.

[0118] Step S100a is the step of applying a high potential voltage 41 to the high potential voltage supply line 40, which corresponds to step 1 of the present invention.

[0119] Step S200a is the step of applying a scan voltage 21 to the gate line 20. The scan voltage 21 is the voltage used to turn on the switching unit 300, which corresponds to step 2 of the present invention.

[0120] Step S300a refers to the step of applying a setting voltage to the data line 30. This setting voltage is used to change the driving unit 200 from a high-resistance state to a low-resistance state, corresponding to step 3 of the present invention.

[0121] Step S400a refers to the step of removing the scan voltage applied to the gate line 20 to turn off the switching unit 300, which corresponds to step 4 of the present invention.

[0122] Step S500a refers to the step of removing the high potential voltage 41 applied to the high potential voltage supply line 40, corresponding to steps 5 and 6 of the present invention.

[0123] Step S600a is the step of applying a scan voltage 21 to the gate line 20. The scan voltage 21 is the voltage used to turn on the switching unit 300, which corresponds to step 7 of the present invention.

[0124] Step S700a is the step of applying a reset voltage to the data line 30. This reset voltage is used to change the drive unit 200 from a low-resistance state to a high-resistance state, corresponding to step 8 of the present invention.

[0125] Step S800a refers to the step of removing the scan voltage applied to the gate line 20 and the reset voltage applied to the data line 30, which corresponds to step 9 of the present invention.

[0126] Figure 12 The accompanying drawings illustrate a display driving device 10b according to a second embodiment of the present invention, using the light-emitting unit 100, driving unit 200, first switching unit 300a, and second switching unit 300b. Figure 13 The accompanying drawings show the display driving device 10b according to the second embodiment of the present invention in more detail.

[0127] Reference Figure 12 and Figure 13 The display driving device 10b of the second embodiment of the present invention may include a plurality of gate lines, a plurality of data lines and a plurality of switching units, such as a first gate line 20a, a second gate line 20b, a first data line 30a, a second data line 30b, a first switching unit 300a and a second switching unit 300b.

[0128] In the case of the display driving device 10a of the first embodiment of the present invention, a setting voltage and a reset voltage are applied through a data line.

[0129] However, the display driving device 10b of the second embodiment of the present invention can apply a setting voltage and a reset voltage through a data line (first data line, 30a) for applying a setting voltage and a data line (second data line, 30b) for applying a reset voltage, respectively.

[0130] More specifically, the gate terminal of the first switching thin-film transistor 310a included in the first switching unit 300a can be connected to the first gate line 20a, the drain terminal can be connected to the first node 11, and the source terminal can be connected to the first data line 30a.

[0131] Furthermore, the gate terminal of the second switching thin-film transistor 310b included in the second switching unit 300b can be connected to the second gate line 20b, the drain terminal can be connected to the first node 11, and the source terminal can be connected to the second data line 30b.

[0132] Figure 14 This diagram illustrates the operation of the display driving device 10b according to the second embodiment of the present invention, step by step.

[0133] Reference Figure 13 and Figure 14The display driving device 10b of the second embodiment of the present invention operates through steps 1 to 9.

[0134] First, a high potential voltage 41 is applied through the high potential voltage supply line 40 (step 1). At this time, the memristor 210 can be in a high resistance state.

[0135] Next, a scan voltage 21 that enables the first switching thin-film transistor 310a to turn on is applied to the gate terminal of the first switching thin-film transistor 310a through the first gate line 20a (step 2).

[0136] Next, a setting voltage is applied to the first data line 30a, which is a voltage that can switch the memristor 210 to a low-resistance state (step 3).

[0137] Next, the scan voltage 21 applied to the gate terminal of the first switching thin-film transistor 310a is removed to turn off the first switching thin-film transistor 310a (step 4). At this time, the current generated by the high potential voltage 41 flows along the light-emitting element 110 and the memristor 210.

[0138] Next, using a memristor 210 that has the characteristic of holding the amount of current flowing through it for one frame, the current flows through the light-emitting element 110 and the memristor 210 for one frame (step 5). At this time, the amount of charge stored in the memristor 210 can be the amount of charge that allows the current to flow through the light-emitting element 110 and the memristor 210 for one frame.

[0139] Next, the high potential voltage 41 applied through the high potential voltage supply line 40 is removed (step 6).

[0140] Next, a scan voltage 21 that enables the second switching thin-film transistor 310b to be turned on is applied to the gate terminal of the second switching thin-film transistor 310b through the second gate line 20b (step 7).

[0141] Next, a reset voltage is applied to the second data line 30b, which is a voltage that can switch the memristor 210 to a high-resistance state (step 8).

[0142] Finally, the scan voltage 21 applied to the gate terminal of the second switching thin-film transistor 310b is removed to turn off the second switching thin-film transistor 310b (step 9).

[0143] Figure 15 This is a flowchart illustrating the display driving method S10b of the second embodiment of the present invention.

[0144] Reference Figure 15 The display driving method S10b of the second embodiment of the present invention includes steps S100b to S800b.

[0145] Step S100b is the step of applying a high potential voltage 41 to the high potential voltage supply line 40, which corresponds to step 1 of the present invention.

[0146] Step S200b is the step of applying a scan voltage 21 to the first gate line 20a. The scan voltage 21 is the voltage used to turn on the first switching unit 300a, which corresponds to step 2 of the present invention.

[0147] Step S300b refers to the step of applying a setting voltage to the first data line 30a. This setting voltage is used to switch the drive unit 200 from a high-resistance state to a low-resistance state, corresponding to step 3 of the present invention.

[0148] Step S400b refers to the step of removing the scan voltage applied to the first gate line 20a to turn off the first switching unit 300a, which corresponds to step 4 of the present invention.

[0149] Step S500b refers to the step of removing the high potential voltage 41 applied to the high potential voltage supply line 40, corresponding to steps 5 and 6 of the present invention.

[0150] Step S600b is the step of applying a scan voltage 21 to the second gate line 20b, which is the voltage used to turn on the second switch 300b, corresponding to step 7 of the present invention.

[0151] Step S700b refers to the step of applying a reset voltage to the second data line 30b. This reset voltage is used to change the drive unit 200 from a low-resistance state to a high-resistance state, corresponding to step 8 of the present invention.

[0152] Step S800b refers to the step of removing the scan voltage applied to the second gate line 20b and the reset voltage applied to the second data line 30b, which corresponds to step 9 of the present invention.

[0153] As described above, the first embodiment of the display driving device 10a and the second embodiment of the display driving device 10b, as well as the first embodiment of the display driving method S10a and the second embodiment of the display driving method S10b, can provide an active display driving circuit that uses memristor elements to minimize size and simplify structure.

[0154] In summary, although specific embodiments of the present invention have been described using memristors to control light-emitting elements, these are merely examples, and the present invention is not limited thereto. It should be understood that the invention has the widest scope based on the technical concept of the present invention. Those skilled in the art can combine or substitute the disclosed embodiments to achieve patterns of shapes not indicated, but this does not depart from the scope of the present invention. Furthermore, those skilled in the art can readily change or modify the disclosed embodiments based on this specification, and such changes or modifications are also included within the scope of the present invention.

Claims

1. A display driving device, characterized in that, include: A light-emitting unit, including a light-emitting element; The driving unit includes a memristor for driving the light-emitting unit; and The switching unit includes a switching thin-film transistor that determines whether to apply a data voltage to the driving unit based on the scan voltage. The switching unit is configured to be directly connected to the first node, the gate line for receiving the scan voltage, and the data line for receiving the data voltage. The first node is directly connected to each of the light-emitting unit, the driving unit, and the switching unit.

2. The display driving device according to claim 1, characterized in that, The driving unit is configured to be connected to the first node, and the first node branches into the light-emitting unit and the switching unit.

3. The display driving device according to claim 1, characterized in that, The switching unit is configured to apply the data voltage input from the data line to the first node when the scan voltage is input from the gate line.

4. The display driving device according to claim 1, characterized in that, The light-emitting unit is configured to be connected to: The first node; and High-potential voltage supply line, used to receive high-potential voltage.

5. The display driving apparatus according to claim 4, wherein The data voltage is any one of the following voltages: A set voltage is provided to transition the memristor from a high-resistance state to a low-resistance state; and Reset voltage, used to switch the memristor from a low-resistance state to a high-resistance state.

6. The display driving device according to claim 5, characterized in that, The drive unit is configured as follows: When the set voltage is applied to the first node, the light-emitting unit is not driven and the memristor switches to a low-resistance state; When the data voltage is not applied to the first node, the light-emitting unit is driven; When the reset voltage is applied to the first node, the light-emitting unit is not driven and the memristor switches to a high-resistance state.

7. The display driving device according to claim 5, characterized in that, The set voltage is greater than the difference between the high potential voltage and the driving voltage of the light-emitting element. The set voltage is less than the high potential voltage.

8. The display driving device according to claim 7, characterized in that, The reset voltage is greater than the difference between the high potential voltage and the driving voltage of the light-emitting element. The reset voltage is less than the set voltage.

9. The display driving device according to claim 1, characterized in that, The switching unit includes a first switching unit and a second switching unit. The gate line includes a first gate line for applying a scan voltage for the operation of the first switching unit and a second gate line for applying a scan voltage for the operation of the second switching unit. The data lines include a first data line that applies a set voltage and a second data line that applies a reset voltage.

10. The display driving device according to claim 9, characterized in that, The first switching unit is configured to be connected to: The first node; The first gate line; and The first data line.

11. The display driving device according to claim 10, characterized in that, The second switching unit is configured to be connected to: The first node; The second gate line; and The second data line.

12. A display driving method, performed by a display driving device according to claim 1, characterized in that, Includes the following steps: Step (a): Apply a high-potential voltage to the high-potential voltage supply line; Step (b): A scan voltage is applied to the gate line, the scan voltage being the voltage used to turn on the switching unit; Step (c) involves applying a set voltage to the data line, the set voltage being a voltage used to switch the drive unit from a high-resistance state to a low-resistance state; Step (d): Remove the scan voltage applied to the gate line to turn off the switching unit; Step (e): Remove the high-potential voltage applied to the high-potential voltage supply line; Step (f): A scan voltage is applied to the gate line, the scan voltage being the voltage used to turn on the switching unit; Step (g) is to apply a reset voltage to the data line, the reset voltage being a voltage used to switch the drive unit from a low-resistance state to a high-resistance state; as well as Step (h) removes the scan voltage applied to the gate line and the reset voltage applied to the data line.

13. A display driving method, performed by the display driving device according to claim 9, characterized in that, Includes the following steps: Step (a): Apply a high-potential voltage to the high-potential voltage supply line; Step (b): A scan voltage is applied to the first gate line, the scan voltage being the voltage used to turn on the first switching unit; Step (c) is to apply a setting voltage to the first data line, the setting voltage being a voltage used to switch the drive unit from a high-resistance state to a low-resistance state; Step (d): Remove the scan voltage applied to the first gate line to turn off the first switching unit; Step (e): Remove the high potential voltage applied to the high potential voltage supply line; Step (f): A scan voltage is applied to the second gate line, the scan voltage being the voltage used to turn on the second switching unit; Step (g) involves applying a reset voltage to the second data line, the reset voltage being a voltage used to switch the drive unit from a low-resistance state to a high-resistance state; as well as Step (h) removes the scan voltage applied to the second gate line and the reset voltage applied to the second data line.

Images