An apparatus for laser-induced plasma implantation of a substrate

Through the laser induced plasma injection device, the plasma injection efficiency is improved by utilizing the laser induction component and the ion acceleration component, the problem of low efficiency of the beam-line equipment is solved, and a simple plasma injection effect is achieved.

CN117051370BActive Publication Date: 2025-10-21NAT UNIV OF DEFENSE TECH
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Patent Information

Application Number
CN202311034377.4
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2023-08-17
Publication Date
2025-10-21
Estimated Expiration
2043-08-17

AI Technical Summary

Technical Problem

Existing beam-line ion implantation equipment has low efficiency, complex structure and inconvenient operation.

Method used

A laser-induced plasma injection device is used, which includes a laser-induced component, an ion acceleration component, a vacuum injection component and a rotating support component. Plasma is formed by laser induction and accelerated in the ion acceleration component before entering the vacuum injection component and finally injected into the substrate.

Benefits of technology

The plasma injection efficiency is improved, the structure is simple, the operation is easy, and the pollution is reduced. The plasma changes the physical and chemical properties of the substrate under a high electric field.

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Abstract

The application relates to a device for laser-induced plasma injection into a substrate, which comprises a laser-induced assembly, an ion acceleration assembly, a vacuum injection assembly and a rotating support assembly; the ion acceleration assembly is installed on the upper end of the vacuum injection assembly, the upper side of the ion acceleration assembly is provided with the laser-induced assembly, and the output end of the rotating support assembly is located in the vacuum injection assembly; the plasma formed by the laser-induced assembly is accelerated and selected through the ion acceleration assembly, enters into the vacuum injection assembly and is injected into the substrate on the rotating support assembly. The application is favorable for improving the injection efficiency of the plasma and has simple structure and convenient operation.
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Description

Technical Field

[0001] The present invention relates to the technical field of laser-induced plasma, in particular to a device for injecting laser-induced plasma into a substrate. Background Art

[0002] Ion implantation technology has many advantages in modifying materials, such as not being limited by the solid solubility of the material and not affecting the external dimensions of the workpiece during the treatment process. This makes ion implantation technology a very important means of material modification.

[0003] Ion implantation is an effective means of surface modification by physically controlling the aggregation of molecules. Whether it's semiconductors, metals, or polymers, the desired ions can be implanted without being limited by their solid solubility. Ion implantation injects high-energy ions into the surface of a material, where they undergo complex physical and chemical reactions, thereby altering the physical, chemical, and mechanical properties of the surface. Currently, plasma implantation equipment primarily utilizes beam-line implantation devices. However, beam-line ion implantation suffers from small beam spots, low efficiency, and low plasma injection efficiency.

[0004] Therefore, those skilled in the art are committed to developing a device for laser-induced plasma injection into a substrate to improve the injection efficiency of the plasma, and the device has a simple structure and is easy to operate. Summary of the Invention

[0005] The technical problem to be solved by the present invention is to provide a device for laser-induced plasma injection into a substrate, which improves the injection efficiency of the plasma and has a simple structure and is easy to operate.

[0006] The technical solution of the present invention to solve the above technical problems is as follows: a device for laser-induced plasma injection into a substrate, comprising a laser induction component, an ion acceleration component, a vacuum injection component and a rotating support component;

[0007] The ion acceleration component is installed on the upper end of the vacuum injection component, the laser induction component is provided on the upper side of the ion acceleration component, and the output end of the rotation support component is located inside the vacuum injection component;

[0008] The plasma formed by the laser induction component is accelerated and selected by the ion acceleration component, enters the vacuum injection component, and is injected into the substrate on the rotating support component.

[0009] The beneficial effects of the present invention are as follows: after the laser induction component induces the formation of plasma on the upper side of the ion acceleration component, the plasma is accelerated by the ion acceleration component and the appropriate plasma is selected and then enters the vacuum injection component. The plasma is injected into the substrate under the action of the high electric field in the vacuum injection component, thereby changing the physical and chemical properties of the substrate. The structure is simple and the operation is easy.

[0010] On the basis of the above technical solution, the present invention can also be improved as follows.

[0011] Furthermore, the vacuum injection assembly includes a vacuum chamber, the side wall of the vacuum chamber has an air inlet and an air outlet, and the air outlet is connected to a vacuum pumping assembly;

[0012] The side wall of the vacuum chamber is installed with a positive electrode plate, and the upper end of the rotating support assembly is connected to the negative electrode.

[0013] The beneficial effect of adopting the above further solution is that ion implantation is performed in a vacuum environment, thereby reducing pollution and improving plasma implantation efficiency.

[0014] Furthermore, the ion acceleration component includes an ion acceleration grid, and the output end of the laser induction component is located at the upper end of the ion acceleration grid.

[0015] The beneficial effect of adopting the above further solution is that the ion acceleration grid is not only used to accelerate the plasma, but also to select suitable plasma under the specific electric field of the ion acceleration grid, which is beneficial for subsequent injection.

[0016] Furthermore, the laser induction component includes a laser ablation material and a laser, and the laser ablation material is located on the upper side of the ion acceleration grid;

[0017] A reflecting mirror, a focusing lens and the laser ablation material are sequentially arranged along the laser output end of the laser.

[0018] The beneficial effect of adopting the above further solution is that the laser ablation material is rapidly ablated under the action of the laser to form plasma, which is beneficial for the subsequent injection of the plasma into the substrate.

[0019] Furthermore, the rotary support assembly includes a workbench, the workbench is located in the vacuum chamber, a rotary support shaft is connected to the bottom of the workbench, the rotary support shaft extends out of the vacuum chamber, and the rotary support shaft is connected to a rotary motor and a cathode electrode;

[0020] A telescopic component is also installed at the bottom of the rotating motor.

[0021] The beneficial effect of adopting the above further solution is that the rotating motor drives the rotating support shaft to drive the workbench and the substrate to rotate, which is beneficial to the uniform injection of plasma.

[0022] Furthermore, an insulating shaft is installed between the rotating support shaft and the output shaft of the rotating motor.

[0023] The beneficial effect of adopting the above further solution is that the rotating support shaft is connected to the cathode electrode, so that its workbench forms the cathode, which is beneficial for the plasma to set the path movement.

[0024] Furthermore, a sealing nest is installed between the rotating support shaft and the bottom wall of the vacuum chamber.

[0025] The beneficial effect of adopting the above further solution is that the vacuum chamber is always kept in a vacuum state when the sealing nesting makes the rotating support shaft rotate or move up and down.

[0026] Furthermore, the telescopic assembly includes a telescopic plate, the rotating motor is installed on the upper side of the telescopic plate, the lower side of the telescopic plate is connected to the output end of the telescopic electric cylinder, the telescopic electric cylinder is installed on the mounting plate, and a guide shaft is also installed between the mounting plate and the telescopic plate.

[0027] The beneficial effect of adopting the above further solution is that the output end of the telescopic electric cylinder moves up and down, thereby driving the workbench to move up and down, so that the substrate and the laser ablation component maintain a suitable distance.

[0028] Furthermore, a magnetic induction heating coil is installed at the bottom of the workbench, and an induction coil that cooperates with the magnetic induction heating coil is installed at the bottom of the vacuum chamber.

[0029] The beneficial effect of adopting the above further solution is that the magnetic induction heating coil is used to heat the workbench, thereby increasing the molecular gap of the substrate, which is beneficial for the injection of plasma into the molecular gap.

[0030] Furthermore, a temperature sensor is installed on the workbench.

[0031] The beneficial effect of adopting the above further solution is that the temperature sensor is used to detect the temperature of the workbench, thereby facilitating the control of the injection temperature of the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 This is a schematic structural diagram of a specific embodiment of the present invention;

[0033] Figure 2 This is a schematic diagram of the telescopic assembly structure according to a specific embodiment of the present invention.

[0034] In the accompanying drawings, the components represented by the reference numerals are as follows:

[0035] 1. Laser induction component; 2. Ion acceleration component; 3. Vacuum injection component; 4. Rotating support component; 5. Vacuum chamber; 6. Air inlet; 7. Vacuum pumping component; 8. Positive electrode; 9. Ion acceleration grid; 10. Laser ablation material; 11. Laser; 12. Reflector; 13. Focusing lens; 14. Workbench; 15. Rotating support shaft; 16. Rotating motor; 17. Insulating shaft; 18. Sealed nesting; 19. Telescopic plate; 20. Telescopic electric cylinder; 21. Mounting plate; 22. Guide shaft; 23. Magnetic induction heating coil; 24. Induction coil; 25. Temperature sensor. DETAILED DESCRIPTION

[0036] The principles and features of the present invention are described below with reference to the accompanying drawings. The examples given are only used to explain the present invention and are not used to limit the scope of the present invention.

[0037] In the description of the present invention, it should be understood that the terms "center", "length", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "inside", "outside", "peripheral", "circumferential" and the like to indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred system or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.

[0038] In the description of the present invention, “a plurality of” means at least two, for example, two, three, etc., unless otherwise clearly and specifically defined.

[0039] In the present invention, unless otherwise specified or limited, the terms "installed," "connected," "connect," "fixed," etc. should be understood in a broad sense. For example, they can refer to fixed connection, detachable connection, or integration; mechanical connection, electrical connection; direct connection, or indirect connection through an intermediate medium; internal communication between two components, or interaction between two components, unless otherwise specified. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on specific circumstances.

[0040] like Figure 1 、 Figure 2 As shown, a device for laser-induced plasma injection into a substrate comprises a laser-induced component 1, an ion acceleration component 2, a vacuum injection component 3 and a rotating support component 4; the ion acceleration component 2 is mounted on the upper end of the vacuum injection component 3, the laser-induced component 1 is provided on the upper side of the ion acceleration component 2, and the output end of the rotating support component 4 is located within the vacuum injection component 3; the plasma formed by the laser-induced component 1 is accelerated and selected by the ion acceleration component 2, then enters the vacuum injection component 3 and is injected into the substrate on the rotating support component 4.

[0041] In the present invention, after the laser induction component 1 induces the formation of plasma on the upper side of the ion acceleration component 2, the plasma is accelerated by the ion acceleration component 2 and the appropriate plasma is selected and then enters the vacuum injection component 3. The plasma is injected into the substrate under the action of the high electric field in the vacuum injection component 3, thereby changing the physical and chemical properties of the substrate. The structure is simple and the operation is easy.

[0042] like Figure 1As shown, in some embodiments, the vacuum injection assembly 3 includes a vacuum chamber 5. The vacuum chamber 5 uses an insulating chamber to reduce the influence of strong electric fields and has a very small thermal expansion coefficient. The side wall of the vacuum chamber 5 has an air inlet 6 and an air outlet. The air inlet 6 is used to break the vacuum after the substrate injection is completed. The air outlet is connected to a vacuum pumping assembly 7, which is used to pump vacuum so that the vacuum chamber 5 always maintains a vacuum state during the plasma injection process. A positive electrode plate 8 is installed on the side wall of the vacuum chamber 5. The positive electrode plate 8 is connected to the high-voltage positive electrode. The upper end of the rotating support assembly 4 is connected to the negative electrode, so that the positive electrode plate 8 and the upper side of the rotating support assembly 4 form a strong electric field for subsequent plasma injection.

[0043] In another embodiment, the ion acceleration assembly 2 includes an ion acceleration grid 9. The output end of the laser induction assembly 1 is located above the ion acceleration grid 9. The ion acceleration grid 9 not only accelerates the plasma but also selects suitable plasma under the specific electric field of the ion acceleration grid 9. In this embodiment, cathode ions are primarily selected. During the forward acceleration of anions, cations are reversely accelerated, thereby selecting suitable anions. Furthermore, because the accelerating electric field of the ion acceleration grid 9 accelerates anions of different charges differently, the ion acceleration grid 9 is also used to select ions of different charges in other embodiments.

[0044] In some embodiments, the laser induction component 1 includes a laser ablation material 10 and a laser 11. The laser ablation material 10 can be made of metal foil, nitride, hydride, etc., mainly selected according to the corresponding plasma to be injected. The laser 11 uses a high-power laser to quickly ablate the laser ablation material 10 to form plasma. The laser ablation material 10 is located on the upper side of the ion acceleration grid 9. A reflector 12, a focusing lens 13 and the laser ablation material 10 are sequentially arranged along the laser output end of the laser 11. The reflector 12 is used to fully reflect the laser, and the focusing lens 13 is mainly used to adjust the size of the laser spot so that the laser spot adapts to the volume of the laser ablation material 10, thereby quickly ablating the laser ablation material 10 to form plasma.

[0045] like Figure 1 、 Figure 2As shown, in the embodiment, the rotary support assembly 4 includes a workbench 14, and the workbench 14 is mainly used for carrying the substrate that needs to be injected with plasma. The workbench 14 is located in the vacuum chamber 5. A magnetic induction heating coil 23 is installed at the bottom of the workbench 14. An induction coil 24 that cooperates with the magnetic induction heating coil 23 is installed at the bottom of the vacuum chamber 5. The induction coil 24 is externally connected to a power supply. The magnetic induction heating coil 23 and the induction coil 24 are used to heat the workbench 14. When the workbench 14 is heated, heat is transferred to the substrate, thereby making its substrate have a suitable temperature. Due to the increase in substrate temperature, the gap between its substrate molecules is increased, which is conducive to subsequent plasma injection into the molecular gap. In order to facilitate the perception of the temperature of the substrate, a temperature sensor 25 is also installed on the workbench 14. The temperature sensor 25 is connected to an external control device. After the temperature sensor 25 transfers the induced temperature to the controller, the controller controls the power of the induction coil 24, and then controls the temperature of the workbench 14.

[0046] To facilitate uniform plasma implantation into the substrate, a rotating support shaft 15 is connected to the bottom of the workbench 14. This shaft extends outside the vacuum chamber 5 and controls the rotation and vertical movement of the workbench 14, adapting it to different substrates and plasma implantation conditions. A sealing insert 18 is installed between the rotating support shaft 15 and the bottom wall of the vacuum chamber 5. This seals the gap between the rotating support shaft 15 and the vacuum chamber 5, preventing leakage during the rotation and vertical movement of the rotating support shaft 15, which could disrupt the vacuum within the vacuum chamber 5.

[0047] Rotating support shaft 15 is connected to a rotating motor 16 and a cathode electrode. Rotating motor 16 drives rotating support shaft 15, thereby rotating table 14. Rotating support shaft 15 is connected to the cathode electrode, forming a cathode on table 14, which facilitates directional movement of the plasma. An insulating shaft 17 is installed between rotating support shaft 15 and the output shaft of rotating motor 16 to prevent interference with and damage to rotating motor 16.

[0048] like Figure 1 、 Figure 2 As shown, in this embodiment, a telescopic assembly is also mounted at the bottom of the rotary motor 16. Specifically, the telescopic assembly includes a telescopic plate 19. The rotary motor 16 is mounted on the upper side of the telescopic plate 19. The lower side of the telescopic plate 19 is connected to the output end of a telescopic electric cylinder 20, which drives the telescopic plate 19 up and down. The use of the telescopic electric cylinder 20 facilitates precise control of the lifting distance of the workbench 14. The telescopic electric cylinder 20 is mounted on a mounting plate 21, and a guide shaft 22 is installed between the mounting plate 21 and the telescopic plate 19.

[0049] Example 1

[0050] 8Cr4Mo4V is a common bearing steel. After quenching and high-temperature tempering, its interior is mainly martensite phase. In order to further improve the wear resistance and corrosion resistance of 8Cr4Mo4V, 8Cr4Mo4V needs to be surface modified.

[0051] In the specific steps, after placing 8Cr4Mo4V on the workbench 14, the vacuum assembly 7 is started to evacuate the vacuum chamber 5, and at the same time, the workbench 14 is heated by the induction coil 24. When the temperature sensor 25 reports that the temperature of the workbench 14 reaches 300°C and maintains it for a period of time, 15KV DC is applied to the ion acceleration grid 9, and 60KV voltage is applied to the positive electrode plate 8 and the rotating support shaft 15. The laser ablation material 10 is nitride, and the focusing lens 13 is adjusted to the appropriate position. The laser 11 is turned on so that the laser emitted by the laser 11 irradiates the nitride, causing the nitride to be rapidly ablated to form plasma. The plasma enters the vacuum chamber 5 under the action of the electric field of the ion acceleration grid 9, and hits the substrate on the workbench 14 under the guidance of the negative electrode and the positive electrode 8. The light emission time of the laser 11 is 200 microseconds to 300 microseconds, and the interval time is 0.2 seconds. After the laser 11 works for 3 seconds to 5 seconds, the step of injecting nitrogen ions into the 8Cr4Mo4V bearing steel is completed.

[0052] In the description of this specification, the reference terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" mean that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine different embodiments or examples described in this specification and features of different embodiments or examples without contradiction.

[0053] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A device for laser-induced plasma injection into a substrate, characterized in that: It comprises a laser induction component (1), an ion acceleration component (2), a vacuum injection component (3) and a rotation support component (4); The ion acceleration component (2) is mounted on the upper end of the vacuum injection component (3), the laser induction component (1) is provided on the upper side of the ion acceleration component (2), and the output end of the rotation support component (4) is located inside the vacuum injection component (3); The plasma generated by the laser induction component (1) is accelerated and selected by the ion acceleration component (2), enters the vacuum injection component (3), and is injected into the substrate on the rotating support component (4); The vacuum injection assembly (3) comprises a vacuum chamber (5), the side wall of the vacuum chamber (5) is provided with an air inlet (6) and an air outlet, and the air outlet is connected to a vacuum pumping assembly (7); A positive electrode plate (8) is installed on the side wall of the vacuum chamber (5), and the upper end of the rotating support assembly (4) is connected to the negative electrode; The rotary support assembly (4) comprises a workbench (14), the workbench (14) is located in the vacuum chamber (5), a rotary support shaft (15) is connected to the bottom of the workbench (14), the rotary support shaft (15) extends out of the vacuum chamber (5), and the rotary support shaft (15) is connected to a rotary motor (16) and a cathode electrode; A telescopic assembly is also installed at the bottom of the rotating motor (16).

2. The device for laser-induced plasma implantation into a substrate according to claim 1, wherein: The ion acceleration component (2) comprises an ion acceleration grid (9), and the output end of the laser induction component (1) is located at the upper end of the ion acceleration grid (9).

3. The device for laser-induced plasma implantation into a substrate according to claim 2, wherein: The laser induction component (1) comprises a laser ablation material (10) and a laser (11), wherein the laser ablation material (10) is located on the upper inner side of the ion acceleration grid (9); A reflecting mirror (12), a focusing lens (13) and the laser ablation material (10) are sequentially arranged along the laser output end of the laser (11).

4. The device for laser-induced plasma implantation into a substrate according to claim 1, wherein: An insulating shaft (17) is installed between the rotating support shaft (15) and the output shaft of the rotating motor (16).

5. The device for laser-induced plasma implantation into a substrate according to claim 1, wherein: A sealing nest (18) is installed between the rotating support shaft (15) and the bottom wall of the vacuum chamber (5).

6. The device for laser-induced plasma implantation into a substrate according to claim 1, wherein: The telescopic assembly comprises a telescopic plate (19), the rotating motor (16) is mounted on the upper side of the telescopic plate (19), the lower side of the telescopic plate (19) is connected to the output end of a telescopic electric cylinder (20), the telescopic electric cylinder (20) is mounted on a mounting plate (21), and a guide shaft (22) is further mounted between the mounting plate (21) and the telescopic plate (19).

7. The device for laser-induced plasma implantation into a substrate according to claim 1, wherein: A magnetic induction heating coil (23) is installed at the bottom of the workbench (14), and an induction coil (24) that cooperates with the magnetic induction heating coil (23) is installed at the bottom of the vacuum chamber (5).

8. The device for laser-induced plasma implantation into a substrate according to claim 1, wherein: A temperature sensor (25) is also installed on the workbench (14).

Citation Information

Patent Citations

  • In situ surface contaminant removal for ion implanting

    CN101006198A

  • Method and apparatus for laser to induce plasma to inject into substrate

    CN102208321A

  • Ion beam injection device and method for inhibiting secondary electron emission of insulating medium material

    CN113529041A