Atomic layer deposition process

Abstract

The present application discloses an atomic layer deposition process method. The atomic layer deposition process method includes: a first valve switching, switching the first valve to an open state, and switching the second valve to a closed state. A first process gas introduction, continuously introducing the first process gas through the first air inlet. A first cleaning purge, continuously introducing an inert protective gas through the third air inlet. A second valve switching, switching the first valve to a closed state, and switching the second valve to an open state. A second process gas introduction, continuously introducing the second process gas through the second air inlet. A second cleaning purge, continuously introducing an inert protective gas through the third air inlet. Through the above-mentioned methods, the present application can reduce the generation of dust in the atomic layer deposition equipment, reduce pipeline blockage and equipment damage.

Description

Technical Field

[0001] The present application relates to the fields of photovoltaic equipment technology and semiconductor technology, and in particular to an atomic layer deposition process method. Background Art

[0002] Vacuum coating is frequently required in the fields of photovoltaic equipment and semiconductor technology. During this process, large amounts of dust are often generated due to mixing of gases. This dust enters the pump tube along with the gas, flows through valves, and ultimately enters the vacuum pump. As a result, the valves and vacuum pumps used are prone to clogging and damage, requiring frequent downtime for maintenance, significantly impacting machine availability. Summary of the Invention

[0003] The embodiments of the present application provide an atomic layer deposition process method that can reduce the generation of dust in atomic layer deposition equipment, reduce pipeline blockage and equipment damage.

[0004] In a first aspect, an embodiment of the present application provides an atomic layer deposition process method. The atomic layer deposition process method includes:

[0005] A process chamber and a negative pressure pump are provided, the negative pressure pump being in communication with the process chamber through a first airflow pipeline and a second airflow pipeline, respectively, the first airflow pipeline and the second airflow pipeline being provided with a first valve and a second valve, respectively, and at least one of the first airflow pipeline and the second airflow pipeline being provided with a cold trap in series, the process chamber being further provided with a first air inlet, a second air inlet, and a third air inlet for respectively supplying a first process gas, a second process gas, and an inert protective gas into the process chamber;

[0006] The first valve switching is to switch the first valve to an open state and the second valve to a closed state;

[0007] The first process gas is introduced, and the first process gas is continuously introduced through the first gas inlet;

[0008] During the first cleaning and purging, inert protective gas is continuously introduced through the third air inlet;

[0009] The second valve switching switches the first valve to a closed state and the second valve to an open state;

[0010] The second process gas is introduced, and the second process gas is continuously introduced through the second air inlet;

[0011] During the second cleaning and purging, inert protective gas is continuously introduced through the third air inlet.

[0012] The beneficial effects of the present application are as follows: different from the prior art, by setting the first process gas to be discharged from the process chamber through the first airflow pipeline after the reaction, and the second process gas to be discharged from the process chamber through the second airflow pipeline after the reaction, the encounter between the first process gas and the second process gas can be reduced to reduce the generation of dust. By setting the first valve and the second valve, and according to the above-mentioned process method, when the first process gas needs to be discharged, the first valve can be opened and the second valve can be closed; when the second process gas needs to be discharged, the second valve can be opened and the first valve can be closed, thereby further reducing the possibility of the first process gas and the second process gas encountering each other, and further reducing the generation of dust. In other words, the first valve and the second valve in the above-mentioned atomic layer deposition process method are in an interlocking logical relationship. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 is a schematic diagram of an embodiment of an apparatus used in the atomic layer deposition method of the present application;

[0014] Figure 2 is a schematic diagram of another embodiment of an apparatus used in the atomic layer deposition method of the present application;

[0015] Figure 3 Schematic diagram of another embodiment of the apparatus used in the atomic layer deposition method of the present application.

[0016] Figure 4 It is a schematic diagram of the steps of the atomic layer deposition method of the present application;

[0017] Figure 5 This is a schematic diagram of the relationship between valve switching and synchronous time in the atomic layer deposition method of the present application. DETAILED DESCRIPTION

[0018] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0019] Vacuum coating processes often generate large amounts of dust. This dust enters the pump tube along with the gas, flows through the valve, and ultimately enters the vacuum pump. As a result, the valve components and vacuum pump used are easily damaged, requiring frequent maintenance downtime, significantly impacting machine availability.

[0020] In related technologies, vacuum coating equipment has installed a filter (or catcher) in front of the vacuum pump or valve body to solve this problem. However, dust is often captured by adding a dust flow and multiple layers of filter screens. The disadvantage is that the flow resistance of the pump pipe system is increased. As the equipment works for a longer time, dust accumulates inside the filter, and the flow resistance of the filter continues to increase. This will cause the effective pumping speed of the reaction chamber to continue to decrease, thereby affecting the stability of the process and the repeatability of large-scale coating quality. In order to improve the above technical problems, the present application can provide the following embodiments.

[0021] The present application proposes an atomic layer deposition device 1. The atomic layer deposition device 1 includes a process chamber 10 and a negative pressure pump 20. The negative pressure pump 20 can continuously form a vacuum or negative pressure (relative vacuum) in the pump body, thereby providing power for the flow of gas in the pipeline in the atomic layer deposition device 1. The process chamber 10 can accommodate parts to be coated, such as wafers, that need to undergo a coating process. As different gas phases are introduced into the process chamber 10, and with the joint participation of other equipment such as heaters in the process chamber 10, a thin film can be deposited on the surface of the part to be coated.

[0022] In one embodiment, see Figures 1 to 3 The process chamber 10 is provided with a first air inlet 35, a second air inlet 36 and a third air inlet 37, which are used to supply the first process gas, the second process gas and the inert protective gas into the process chamber 10 respectively. In the coating process, the process chamber 10 needs to input two different process gases, namely the first process gas and the second process gas. The first process gas and the second process gas are introduced into the process chamber 10 through the first air inlet 35 and the second air inlet 36 in a time sequence, and the first process gas and the second process gas are discharged from the process chamber 10 after the reaction in a time sequence. In the process of switching from introducing the first process gas to introducing the second process gas and from introducing the second process gas to introducing the first process gas, it is necessary to introduce an inert protective gas through the third air inlet 37 to discharge the first process gas or the second process gas remaining in the process chamber 10 out of the process chamber 10, thereby reducing the possibility of the first process gas and the second process gas meeting in the process chamber 10, and ensuring the normal progress of the next deposition process. Optionally, the first air inlet 35, the second air inlet 36 and the third air inlet 37 can be connected to the process chamber 10 through a common pipeline, so that the process chamber 10 can be connected to the first air inlet 35, the second air inlet 36 and the third air inlet 37 through a common pipeline, so that the number of connecting ports opened in the process chamber 10 can be reduced, thereby reducing the manufacturing difficulty of the process chamber 10.

[0023] In some embodiments, the first process gas is composed of an inert protective gas mixed with a first reactive gas. The first reactive gas can be any one of trimethylaluminum, titanium tetrachloride, or hafnium tetrachloride.

[0024] In some embodiments, the second process gas is composed of an inert protective gas mixed with a second reactive gas, which can be any one of water vapor, titanium nitride, or hafnium dioxide.

[0025] In some embodiments, the inert shielding gas may be nitrogen or argon. Nitrogen or argon are chemically stable and do not react with the process gas or the workpiece to be coated during the purge process. Alternatively, the inert shielding gas may be a chemically inert gas, such as a gaseous substance corresponding to a Group 0 element on the periodic table, such as helium, neon, krypton, xenon, or radon.

[0026] In one embodiment, the process chamber 10 and the negative pressure pump 20 are connected to the process chamber 10 via a first gas flow line 31 and a second gas flow line 32, respectively. Since the first process gas and the second process gas react and generate dust when they meet, the first process gas is discharged from the process chamber 10 via the first gas flow line 31 after the reaction, and the second process gas is discharged from the process chamber 10 via the second gas flow line 32 after the reaction. This reduces the interaction between the first and second process gases and thus reduces the generation of dust.

[0027] In one embodiment, the first airflow conduit 31 and the second airflow conduit 32 are respectively provided with a first valve 33 and a second valve 34. By providing the first valve 33 and the second valve 34, when the first process gas needs to be discharged, the first valve 33 can be opened and the second valve 34 can be closed; when the second process gas needs to be discharged, the second valve 34 can be opened and the first valve 33 can be closed, thereby further reducing the possibility of the first and second process gases intersecting and thereby reducing the generation of dust. The first valve 33 and the second valve 34 are in an interlocking logical relationship.

[0028] Furthermore, in one embodiment, in combination Figures 1 to 3 At least one of the first gas flow pipeline 31 and the second gas flow pipeline 32 is connected in series with a cold trap 40. The cold trap 40 can collect the first process gas and the second process gas flowing therethrough, and the collected process gas can be recycled and reused.

[0029] Combine Figure 4 and Figure 5 The following is an exemplary description of the process method for coating using the atomic layer deposition device 1 of the present application. The interlocking logical relationship between the first valve 33 and the second valve 34 can be found in the description of the implementation method.

[0030] S10: The negative pressure pump 20 evacuates the process chamber 10 through the first air flow pipeline 31 and / or the second air flow pipeline 32.

[0031] When the process chamber 10 is undergoing a coating process, since air will affect the coating process, the process chamber 10 needs to be vacuumed to ensure the purity of the gas phase in the process chamber 10 during the coating reaction and to ensure the quality of the coating. The negative pressure pump 20 is connected to the process chamber 10 through the first airflow line 31 and the second airflow line 32, so the process chamber 10 can be vacuumed through the first airflow line 31 or the second airflow line 32. For example, the first valve 33 is opened and the second valve 34 is closed, and the negative pressure pump 20 vacuums the process chamber 10 through the first airflow line 31. For another example, when the second valve 34 is opened and the first valve 33 is closed, the negative pressure pump 20 vacuums the process chamber 10 through the second airflow line 32. For another example, when both the first valve 33 and the second valve 34 are opened, the process chamber 10 is vacuumed through the first airflow line 31 and the second airflow line 32.

[0032] S20: First valve switching, switching the first valve 33 to an open state and switching the second valve 34 to a closed state.

[0033] After evacuating the process chamber 10, the first process gas can be introduced into the process chamber 10 to perform the coating process. When the first process gas is introduced into the process chamber 10, the reacted first process gas needs to be discharged through the first gas flow line 31. Therefore, before introducing the first process gas, the first valve 33 needs to be switched to the open state and the second valve 34 needs to be switched to the closed state.

[0034] Furthermore, during the coating process, the first process gas and the second process gas need to be alternately introduced and circulated multiple times. After the second process gas is introduced and the process chamber 10 is cleaned and purged with an inert protective gas, the process can return to step S20 to form a cycle of alternating introduction of the two process gases. When the second process gas is introduced, the second valve 34 is in an open state and the first valve 33 is in a closed state. Therefore, before the first process gas is introduced again, the valves need to be switched, switching the first valve 33 to an open state and the second valve 34 to a closed state.

[0035] In one embodiment, the first valve switching timing is within the duration of the previous cleaning and purging step. This setting can reduce the possibility of the first process gas entering the second airflow pipeline 32 during the valve switching period. Optionally, the first valve switching timing is in the second half of the duration of the previous cleaning and purging step. Since the second process gas introduced previously needs to be purged during the cleaning and purging step, if the valve switching is performed too early, the second process gas introduced previously may not be completely purged and enter the first airflow pipeline 31. Therefore, by setting the first valve switching timing to the second half of the duration of the previous cleaning and purging step, the encounter between the two process gases can be reduced, thereby reducing the generation of dust.

[0036] In one embodiment, during the first valve switching step, the first valve 33 is opened earlier than the second valve 34 is closed. In the atomic layer deposition apparatus 1 of the present application, the process chamber 10 requires continuous exhaust during operation. Therefore, the negative pressure pump 20 is also in a continuous working state. Since the negative pressure pump 20 and the process chamber 10 are connected via the first airflow pipeline 31 and the second airflow pipeline 32, and the valve switching requires a certain amount of time, if the first valve 33 is not fully opened and the second valve 34 is already closed, the airflow resistance in the pipeline will be too large, which may cause damage to the negative pressure pump 20. In order to improve the above situation, by setting the time when the first valve 33 is opened earlier than the time when the second valve 34 is closed, it can be ensured that the first valve 33 has sufficient time to open before the second valve 34 begins to close, thereby avoiding excessive airflow resistance in the pipeline. Even if the first valve 33 and the second valve 34 are open at the same time, the airflow resistance in the pipeline is reduced and will not affect the negative pressure pump 20. Furthermore, the valve switching timing is in the second half of the cleaning purge duration of the inert protective gas, and the gas flow in the pipeline is inert protective gas. Even if the first valve 33 and the second valve 34 are open at the same time, the first process gas and the second process gas will not meet.

[0037] S30: The first process gas is introduced continuously through the first gas inlet 35. After the valve is switched, the first process gas can be introduced into the process chamber 10 for the atomic layer deposition process. The first valve 33 is opened, and the first process gas is discharged through the first gas flow line 31 to the negative pressure pump 20. The principles of atomic layer deposition can be at least referenced to the prior art and will not be further described.

[0038] S40: First cleaning and purging, continuously introducing inert protective gas through the third air inlet duct 37.

[0039] After the first process gas is introduced, the process chamber 10 and the pipeline need to be cleaned and purged before the second process gas is introduced for the next deposition process. Continuous introduction of inert protective gas through the third gas inlet 37 can exhaust the residual first process gas in the process chamber 10 and the pipeline.

[0040] In one embodiment, the duration of the inert protective gas during the first cleaning purge is longer than the duration of the first process gas. This arrangement can ensure the cleaning purge effect and further reduce the encounter between the two process gases.

[0041] S50: Second valve switching, switching the first valve 33 to a closed state and switching the second valve 34 to an open state.

[0042] After the first cleaning and purging, a second process gas needs to be introduced into the process chamber 10 for the deposition process. When the second process gas is introduced into the process chamber 10, the reacted second process gas needs to be discharged through the second gas flow line 32. Therefore, before introducing the second process gas, the second valve 34 needs to be switched to the open state and the first valve 33 needs to be switched to the closed state.

[0043] In one embodiment, the second valve switching is performed during the duration of the first cleaning and purging step. This configuration can reduce the possibility of the second process gas entering the first airflow conduit 31 during the valve switching period. Alternatively, the second valve switching is performed during the second half of the duration of the first cleaning and purging step. Since the first process gas needs to be purged during the cleaning and purging step, if the valve switching is performed too early, the first process gas may not be completely purged and enter the second airflow conduit 32. Therefore, by setting the second valve switching to the second half of the duration of the first cleaning and purging step, the encounter between the two process gases can be reduced, thereby reducing the generation of dust.

[0044] In one embodiment, during the second valve switching step, the second valve 34 is opened earlier than the first valve 33 is closed. In the atomic layer deposition apparatus 1 of the present application, the process chamber 10 requires continuous exhaust during operation. Therefore, the negative pressure pump 20 is also in a continuous working state. Since the negative pressure pump 20 and the process chamber 10 are connected via the first air flow line 31 and the second air flow line 32, and the valve switching requires a certain amount of time, if the second valve 34 is not fully opened and the first valve 33 is already closed, the air flow resistance in the line will be too large, which may cause damage to the negative pressure pump 20. In order to improve the above situation, by setting the timing of the second valve 34 opening earlier than the timing of the first valve 33 closing, it is possible to ensure that the second valve 34 has sufficient opening time before the first valve 33 starts to close, thereby avoiding excessive air flow resistance in the line. Even if the first valve 33 and the second valve 34 are open at the same time, the air flow resistance in the line is reduced and will not affect the negative pressure pump 20. Furthermore, the valve is switched during the duration of the cleaning and purging step of the inert protective gas, and the gas flow in the pipeline is the inert protective gas. Even if the first valve 33 and the second valve 34 are open at the same time, the first process gas and the second process gas will not meet.

[0045] S60: The second process gas is introduced, and the second process gas is continuously introduced through the second air inlet 36.

[0046] After the second valve switching, the second process gas is introduced into the process chamber 10 to perform the atomic layer deposition process. The second process gas can be discharged from the second gas flow line 32 to the negative pressure pump 20 through the opened second valve 34 .

[0047] S70: Second cleaning and purging, continuously introducing inert protective gas through the third air inlet duct 37.

[0048] After the second process gas is introduced, the process chamber 10 and the pipeline need to be cleaned and purged before the first process gas is introduced for the next deposition process. Continuous introduction of inert protective gas through the third gas inlet 37 can exhaust the second process gas remaining in the process chamber 10 and the pipeline.

[0049] In one embodiment, the duration of the inert protective gas during the second cleaning purge is longer than the duration of the second process gas. This arrangement can ensure the cleaning purge effect and further reduce the encounter between the two process gases.

[0050] S80: Return to execute the first valve switching step.

[0051] In a complete coating process, the first process gas and the second process gas need to be introduced alternately multiple times in a cycle. From step S20 to step S70, it is a complete process cycle. Steps S20 to S70 are repeated to complete the complete coating process cycle.

[0052] In one embodiment, combining Figure 4 and Figure 5 An example introduction to the above steps is given. Figure 4 It is a schematic diagram of the steps of the atomic layer deposition process of this application, Figure 5 This is a schematic diagram of the relationship between valve switching and ventilation time in the atomic layer deposition process method of the present application. The figure takes the example of the first reaction gas being trimethylaluminum (TMA) and the second reaction gas being water vapor (H2O) as an example. The same is true for other embodiments and will not be repeated here. Figure 5 The upper part of FIG. 1 is a schematic diagram of the atomic layer deposition process in different process chambers 10 , which shows that the atomic layer deposition processes in different process chambers 10 are not completely synchronized. Figure 5 The process of one process chamber 10 in the embodiment of the present invention is composed of a plurality of process cycles, wherein each process cycle corresponds to the above steps S20 to S70. Figure 5 The lower half of FIG. 1 is a schematic diagram of the relationship between valve switching and ventilation time in a single process chamber 10 . Figure 5 The sequence of steps from left to right is represented in the figure. First, execute step S20 for the first valve switching, at which time the first valve 33 is switched to the open state and the second valve 34 is closed. Then execute steps S30 and S40. In the figure, S30 means that trimethylaluminum is introduced for 6 seconds, and S40 means that the first cleaning purge (TMA Purge) lasts for 12 seconds. Then execute step S50 for the second valve switching within the duration of the first cleaning purge, at which time the second valve 34 is opened first and the first valve 33 is closed later. Then execute steps S60 and S70, S60 means that water vapor is introduced for 7 seconds, and S70 means that the second cleaning purge (H2O Purge) lasts for 13 seconds. After that, return to execute step S20 to form a cycle of gas introduction. In other words, steps S20 to S70 constitute a small cycle in the process method, and the coating process cycle in the process chamber 10 is composed of a preset number of small cycles.

[0053] S90: After repeating steps S20 to S70, the cold trap 40 is regenerated.

[0054] After a preset number of cycles, the condensed material in the cold trap 40 is insufficient, and the cold trap 40 needs to be regenerated. Regenerating the cold trap 40 can be achieved by heating the cold trap 40 to evaporate or sublime the condensed material, thereby draining it out of the cold trap 40. The material draining out of the cold trap 40 can be recycled, reducing the cost of the coating process.

[0055] In one embodiment, combining Figures 1 to 3 , at least one of the first airflow pipeline 31 and the second airflow pipeline 32 is provided with a cold trap 40 in series. Specifically, if the first process gas and the second process gas are discharged directly after the reaction, on the one hand, it may pollute the environment, and on the other hand, it may cause waste of raw materials. By providing a cold trap 40 in series with at least one of the first airflow pipeline 31 and the second airflow pipeline 32, the first process gas or the second process gas can be collected and reused. At least one of the first airflow pipeline 31 and the second airflow pipeline 32 is provided with a cold trap 40 in series. There are three situations below, each of which is illustrated by way of example.

[0056] The first case: combination Figure 1 , the first air flow pipeline 31 is provided with a cold trap 40, and there are two first valves 33, which are respectively arranged in series at both ends of the cold trap 40 in the first air flow pipeline 31. The first process gas is composed of an inert protective gas mixed with a first reaction gas. The first reaction gas can be any one of trimethylaluminum, titanium tetrachloride or hafnium tetrachloride. When the first process gas flows through the cold trap 40, the first reaction gas can be liquefied, solidified or even sublimated. Therefore, when the first process gas passes through the cold trap 40, the first reaction gas therein can be captured by the cold trap 40, and the inert protective gas can be discharged through the negative pressure pump 20. The temperature of the cold trap 40 is higher than the boiling point of the inert protective gas and lower than the melting point of the first reaction gas. Furthermore, since the temperature of the cold trap 40 is lower than that of the process chamber 10, the first air flow pipeline 31 and the second air flow pipeline 32, the cold trap 40 is also in a negative pressure state. The first valves 33 at both ends of the cold trap 40 seal both ends of the cold trap 40 when closed, thereby preventing the tail gas discharged from the second air flow pipeline 32 from flowing into the cold trap 40 during the circulation of gas, thereby reducing the encounter of the two process gases in the cold trap 40.

[0057] The second case: combined Figure 2The second air flow pipeline 32 is provided with a cold trap 40, and there are two second valves 34, which are respectively arranged in series at both ends of the cold trap 40 in the second flow pipeline. The second process gas is composed of an inert protective gas mixed with a second reaction gas. The second reaction gas can be any one of water vapor, titanium nitride or hafnium dioxide. When the second process gas flows through the cold trap 40, the second reaction gas can be liquefied, solidified or even sublimated. As a result, when the second process gas passes through the cold trap 40, the second reaction gas therein can be captured by the cold trap 40, and the inert protective gas can be discharged through the negative pressure pump 20. The temperature of the cold trap 40 is higher than the boiling point of the inert protective gas and lower than the melting point of the second reaction gas. Furthermore, since the temperature of the cold trap 40 is lower than that of the process chamber 10, the first air flow pipeline 31 and the second air flow pipeline 32, the cold trap 40 is also in a negative pressure state. The second valves 34 at both ends of the cold trap 40 seal both ends of the cold trap 40 when closed, thereby preventing the tail gas discharged from the first air flow pipeline 31 from flowing into the cold trap 40 during the circulation of gas, thereby reducing the encounter of the two process gases in the cold trap 40.

[0058] The third case: combination Figure 3 Both the first airflow pipeline 31 and the second airflow pipeline 32 are provided with a cold trap 40; there are two first valves 33, one each connected in series to the ends of the cold trap 40 in the first airflow pipeline 31; there are two second valves 34, one each connected in series to the ends of the cold trap 40 in the second airflow pipeline. The first process gas is composed of an inert protective gas mixed with a first reactive gas. The first reactive gas can be any one of trimethylaluminum, titanium tetrachloride, or hafnium tetrachloride. The second process gas is composed of an inert protective gas mixed with a second reactive gas. The second reactive gas can be any one of water vapor, titanium nitride, or hafnium dioxide.

[0059] By providing a cold trap 40 in the first gas flow pipeline 31 and the second gas flow pipeline 32, the first reaction gas and the second reaction gas can be captured by the cold trap 40. By providing two first valves 33 and two second valves 34, both ends of the cold trap 40 can be closed or opened simultaneously. The first valves 33 and the second valves 34 are opened alternately, that is, when the two first valves 33 are open, the two second valves 34 are closed; or when the two first valves 33 are closed, the two second valves 34 are open, thereby preventing the two process gases from meeting in the cold trap 40.

[0060] In one embodiment, the atomic layer deposition apparatus 1 includes multiple process chambers 10, each of which corresponds to a vacuum pump 20, as well as a first airflow line 31 and a second airflow line 32 between the vacuum pump 20 and the process chamber 10. In other words, each process chamber 10 is exhausted via an independent vacuum pump 20 and independent airflow line. This arrangement prevents the coating processes in the process chambers 10 from interfering with each other, and both vacuuming and exhausting can be achieved by the same vacuum pump 20.

[0061] Based on the previous embodiment, each process chamber 10 is provided with at least one corresponding cold trap 40, and the atomic layer deposition apparatus 1 further includes a heat exchanger 50, which is connected to each of the multiple cold traps 40 via pipelines. Because the cooling pipelines of the cold traps 40 are not connected to the first airflow pipeline 31 or the second airflow pipeline 32, the cold traps 40 can be cooled by the same heat exchanger 50, thereby reducing the cost of the atomic layer deposition apparatus 1.

[0062] On the basis of the above, the atomic layer deposition apparatus 1 further includes a first common pipeline 38 and a second common pipeline 39. One end of the first common pipeline 38 is connected to the process chamber 10, and the other end is connected to the first gas flow pipeline 31 and the second gas flow pipeline 32 respectively; one end of the second common pipeline 39 is connected to the negative pressure pump 20, and the other end is connected to the first gas flow pipeline 31 and the second gas flow pipeline 32 respectively. Such an arrangement can reduce the number of communication ports provided on the process chamber 10, which is conducive to improving the airtightness of the process chamber 10 and reducing the manufacturing cost of the process chamber 10. It can also reduce the interfaces required for the negative pressure pump 20, reducing the requirements for the specifications of the negative pressure pump 20.

[0063] In one embodiment, the atomic layer deposition apparatus 1 further includes an exhaust gas treatment device 70, which is in communication with the negative pressure pump 20. The exhaust gas treatment device 70 is capable of treating the first process gas and the second process gas in the first gas flow line 31 and the second gas flow line 32 that are not collected by the cold trap 40, thereby preventing the process gases from polluting the environment.

[0064] In one embodiment, the atomic layer deposition equipment 1 also includes a pressure detection device 60, which is arranged on the process chamber 10 to detect the pressure in the process chamber 10, thereby providing data support for the vacuum state of the negative pressure pump 20 and the injection conditions of the process gas.

[0065] Based on the above embodiment, the structure of the cold trap 40 can be described as follows. The cold trap 40 includes a shell having a cooling chamber, the shell being provided with an air inlet and an air outlet. The cold trap 40 is connected in series with the first airflow pipeline 31 and / or the second airflow pipeline 32 through the air inlet and the air outlet. The cold trap 40 also includes a cooling pipeline, which is coiled within the cooling chamber and extends outside the shell to form a cooling inlet and a cooling outlet. The heat exchanger 50 can circulate coolant in the cooling pipeline through the cooling inlet and the cooling outlet, thereby reducing the temperature of the cooling chamber and achieving the collection of process gas.

[0066] The above are merely embodiments of the present application and are not intended to limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. An atomic layer deposition process, characterized in that: include: A process chamber and a negative pressure pump are provided, wherein the negative pressure pump is connected to the process chamber through a first gas flow pipeline and a second gas flow pipeline, respectively, the first gas flow pipeline and the second gas flow pipeline are respectively provided with a first valve and a second valve, and at least one of the first gas flow pipeline and the second gas flow pipeline is provided with a cold trap in series, and the process chamber is further provided with a first gas inlet channel, a second gas inlet channel, and a third gas inlet channel for respectively supplying a first process gas, an inert protective gas, and a second process gas into the process chamber; The first valve switching is to switch the first valve to an open state and the second valve to a closed state; A first process gas introduction, wherein the first process gas is continuously introduced through the first gas inlet; During the first cleaning and purging, the inert protective gas is continuously introduced through the third air inlet passage; The second valve switching is to switch the first valve to a closed state and the second valve to an open state during the second half of the first cleaning and purging period when the inert protective gas is introduced, wherein the second valve is opened earlier than the first valve is closed; a second process gas introduction, continuously introducing the second process gas through the second gas inlet; During the second cleaning and purging, the inert protective gas is continuously introduced through the third air inlet passage.

2. The process according to claim 1, wherein: The duration of the inert protective gas in the first cleaning purge is longer than the duration of the first process gas in the first process gas introduction; The duration of the inert protective gas introduction during the second cleaning and purging is greater than the duration of the second process gas introduction during the second process gas introduction.

3. The process according to claim 1, wherein: After the second cleaning and purging, the process method further includes: returning to execute the first valve switching step.

4. The process according to claim 1, wherein: The timing of the second valve switching is within the duration of the first cleaning and purging step; The first valve switching timing is within the duration of the previous cleaning and purging step.

5. The process according to claim 3, wherein: After returning to execute the first valve switching step for a preset number of cycles, the process method further includes: regenerating the cold trap.

6. The process according to claim 1, wherein: In the first valve switching step, the first valve is opened earlier than the second valve is closed; In the second valve switching step, the second valve is opened earlier than the first valve is closed.

7. The process according to claim 1, wherein: The first process gas is composed of an inert protective gas mixed with a first reaction gas. The first reaction gas can be any one of trimethylaluminum, titanium tetrachloride or hafnium tetrachloride.

8. The process according to claim 1, wherein: The second process gas is composed of an inert protective gas mixed with a second reaction gas. The second reaction gas can be any one of water vapor, titanium nitride, or hafnium dioxide.

9. The process according to any one of claims 1 to 8, characterized in that: The inert protective gas can be nitrogen or argon.

10. The process according to claim 1, wherein: Before the first valve switching, the process method further includes: the negative pressure pump evacuating the process chamber through the first air flow pipeline or the second air flow pipeline.

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