An atomic layer deposition apparatus

Abstract

The invention relates to an atomic layer deposition apparatus having a reaction chamber (1) arranged inside a vacuum chamber and a stationary gas manifold assembly (3) fixedly arranged in the atomic layer deposition apparatus and arranged to supply gas to the reaction chamber (1) from outside the vacuum chamber. The reaction chamber (1) is a movable reaction chamber (1) arranged movable relative to the vacuum chamber and the stationary gas manifold assembly (3). The atomic layer deposition apparatus further comprises a connection device (4) coupling the movable reaction chamber (1) to the stationary gas manifold assembly (3). The connection device (4) comprises a flexible outer flange assembly (5) surrounding the stationary gas manifold assembly (3) and a first connection face (6) connected to a second connection face (11) of the reaction chamber (1).

Description

TECHNICAL FIELD

[0001] The invention relates to an atomic layer deposition apparatus. BACKGROUND

[0002] In prior art atomic layer deposition apparatuses, the reaction chamber is typically static and the gas manifold is fixedly connected to the reaction chamber. However, there are also movable reaction chambers, but the gas connection between the reaction chamber and the gas manifold needs to be connected manually by the user.

[0003] The invention relates to a large atomic layer deposition machine, the length of which can exceed 4 meters and the width of the substrate processed in the reaction chamber can exceed 1 meter. Thus, the diameter of the gas supply and exhaust pipes can even reach 250 mm. Since pipe parts of such dimensions are very heavy and located inside the large machine, they are difficult to clean or replace when dirty. SUMMARY

[0004] The object of the invention is to provide an atomic layer deposition apparatus that solves the above-mentioned problems.

[0005] The object of the invention is achieved by an atomic layer deposition apparatus, which is characterized by what is stated in the application. The preferred embodiments of the invention are disclosed in the application.

[0006] The invention is based on the idea of providing a flexible connection between the reaction chamber and the fixed gas manifold assembly, which reacts to the movement of the reaction chamber and keeps the connection between the reaction chamber and the fixed gas manifold assembly tight.

[0007] The atomic layer deposition apparatus according to the invention has a reaction chamber, which is arranged inside a vacuum chamber, and a fixed gas manifold assembly, which is fixedly arranged in the atomic layer deposition apparatus and is arranged to supply gas to the reaction chamber from outside the vacuum chamber. The reaction chamber is a movable reaction chamber, which is arranged to be movable relative to the vacuum chamber and the fixed gas manifold assembly. The atomic layer deposition apparatus also comprises a connection device, which couples the movable reaction chamber to the fixed gas manifold assembly. The connection device comprises a flexible outer flange assembly, which surrounds the fixed gas manifold assembly, and a first connection face, which is connected to a second connection face of the reaction chamber.

[0008] According to the invention, the flexible outer flange assembly is coaxially arranged to surround the fixed gas manifold assembly, so that the flexible outer flange assembly and the fixed gas manifold assembly have a coaxial gap, thereby forming a gas passage between the flexible outer flange assembly and the fixed gas manifold assembly.

[0009] According to the present invention, the flexible outer flange assembly comprises a first connection portion having the first connection face, a second connection portion attached to the fixed gas manifold assembly, and a flexible connection portion connecting the first and second connection portions together such that the first connection portion is movable relative to the second connection portion.

[0010] According to the present invention, the flexible connection portion comprises an expansion member connected to the first and second connection portions and surrounding the fixed gas manifold assembly. The expansion member extends between the first and second connection portions which together form a gas-tight wall surrounding the fixed gas manifold assembly. The expansion member is arranged to contract when the first and second connection faces are connected together and to expand when there is no pressure contact between the fixed gas manifold structure and the reaction chamber.

[0011] According to the present invention, the expansion member is a bellow structure.

[0012] According to the present invention, the flexible connection portion further comprises a flexible member connected to the first and second connection portions and separate from the expansion member. The flexible member is arranged to expand and contract in accordance with contact between the first connection face of the flexible outer flange assembly and the second connection face of the reaction chamber to maintain the contact tight.

[0013] According to the present invention, the flexible member comprises a pre-loaded spring extending between the first and second connection portions.

[0014] According to the present invention, the flexible member is arranged to provide vertical movement for the first connection face. Alternatively, the flexible member is arranged to provide tilting movement for the first connection face. Alternatively, the flexible member is arranged to provide both vertical and tilting movement for the first connection face.

[0015] According to the present invention, the fixed gas manifold assembly comprises a housing structure enclosing a rigid gas tube extending within the housing structure from a gas unit to an end face of the housing structure.

[0016] According to the present invention, the vacuum chamber and the fixed gas manifold assembly are fixed together and the fixed gas manifold assembly is arranged to extend from outside the vacuum chamber through a wall of the vacuum chamber into the vacuum chamber, the connection device being arranged within the vacuum chamber.

[0017] According to the present application, the atomic layer deposition apparatus comprises a plurality of fixed gas manifold assemblies fixedly arranged in the atomic layer deposition apparatus such that a first fixed gas manifold assembly is arranged to supply gas to the reaction chamber from outside the vacuum chamber and a second fixed gas manifold assembly is arranged to discharge gas from the reaction chamber to outside the vacuum chamber. The atomic layer deposition apparatus further comprises a gas source for supplying gas to the reaction chamber through the first fixed gas manifold assembly and a discharge device for discharging gas from the reaction chamber through the second fixed gas discharge manifold assembly. The connection apparatus is arranged to be connected with each of the fixed gas manifold assemblies to connect the movable reaction chamber to the fixed gas manifold assemblies.

[0018] One advantage of the present application is that even though the reaction chamber is arranged to be movable with respect to the fixed gas manifold assemblies, the connection between the reaction chamber and the fixed gas manifold assemblies can be maintained tight due to the flexible outer flange assembly of the connection apparatus. Another advantage of the present application is that the outer surface of the fixed gas manifold structure can be kept clean since the gas passage in which an inert gas such as nitrogen can be supplied is arranged in the coaxial gap formed between the fixed gas manifold assemblies and the connection apparatus. BRIEF DESCRIPTION OF DRAWINGS

[0019] The present application will be described in detail below with specific embodiments in connection with the attached drawings, in which

[0020] Figure 1 Details of the atomic layer deposition apparatus according to the present application are shown;

[0021] Figure 2 The connection apparatus according to the present application is shown in one position;

[0022] Figure 3 The connection apparatus according to the present application is shown in another position; and

[0023] Figure 4 The connection apparatus according to the present application is shown. DETAILED DESCRIPTION

[0024] Figure 1 Details of the atomic layer deposition apparatus according to the present application are shown, the atomic layer deposition apparatus having a reaction chamber 1 arranged inside a vacuum chamber. The reaction chamber 1 comprises a supply apparatus connected from a fixed gas manifold assembly 3. Figure 1The shown reaction chamber 1 is arranged on rails such that the reaction chamber 1 is movable relative to the vacuum chamber, so that the reaction chamber 1 can be moved out of the vacuum chamber and again moved into the vacuum chamber. Thus, the reaction chamber 1 is also movable relative to the fixed gas manifold assembly 3, which is arranged in connection with the vacuum chamber. The reaction chamber 1 is thus a movable reaction chamber 1. The atomic layer deposition apparatus further comprises a connection device 4, which couples the movable reaction chamber 1 to the fixed gas manifold assembly 3. When the movable reaction chamber 1 is moved relative to the vacuum chamber and the fixed gas manifold remains in its fixed position in connection with the vacuum chamber, the movable reaction chamber 1 and the fixed gas manifold 3 are connected by the connection device 4, which comprises a flexible outer flange assembly 5, which surrounds the fixed gas manifold assembly, and a first connection face 6, which is connected to a second connection face 11 of the reaction chamber 1. When the fixed gas manifold assembly 3 and the reaction chamber 1 are coupled, the flexible outer flange assembly 5 provides for the up and down movement of the first connection face 6 and the tilting movement of the first connection face 6 relative to the reaction chamber 1. The reaction chamber 1 is too heavy to be aligned according to the fixed gas manifold assembly 3, which cannot be moved as it is fixed in the atomic layer deposition apparatus. The first connection face 6 will be pressed against the second connection face 11 of the reaction chamber 1, so that the connection between the fixed gas manifold assembly 3 and the reaction chamber 1 is tight and gas cannot escape from the connection to the vacuum chamber. The fixed gas manifold assembly 3 is fixedly arranged in the atomic layer deposition apparatus such that the atomic layer deposition apparatus is arranged to supply gas to the reaction chamber 1 from a gas source arranged outside the vacuum chamber.

[0025] Figure 2 The connection device 4 according to the application is shown in a position in which the first connection face 6 is at a distance from the second connection face 11 of the reaction chamber 1. In other words, Figure 2 The state of the atomic layer deposition apparatus is shown in which the connection between the reaction chamber 1 and the fixed gas manifold assembly 3 has not yet been formed, and the precursor supplied from the fixed gas manifold assembly 3 will escape to the vacuum chamber. Figure 2Details of a connection arrangement 4 of an atomic layer deposition apparatus are shown, the connection arrangement 4 being arranged to form a connection between a reaction chamber 1 and a stationary gas manifold assembly 3. The connection arrangement 4 comprises a first connection face 6 arranged to connect to a second connection face 11 of the reaction chamber 1. The first connection face 6 is movable towards the second connection face 11 when the movable reaction chamber 1 is arranged in its position in the vacuum chamber. The first connection face 6 is moved in response to movement of a flexible outer flange assembly 5 around the stationary gas manifold assembly 3. The flexible outer flange assembly 5 comprises a first connection part 51 having the first connection face 6, a second connection part 52 attached to the stationary gas manifold assembly 3, and a flexible connection part 53 connecting the first and second connection parts 51, 52 together such that the first connection part 51 is movable relative to the second connection part 52. The flexible connection part 53 provides for up and down movement and tilting movement of the first connection face 6 relative to the second connection face 11 when the reaction chamber 1 and the stationary gas manifold structure need to be aligned.

[0026] Figure 2 It is also shown that the flexible connection part 53 comprises an expansion member 53a connected to the first and second connection parts 51, 52 and surrounding the stationary gas manifold assembly 3. The expansion member 53a extends between the first and second connection parts 51, 52 which together form a gas-tight wall around the stationary gas manifold assembly 3. In other words, the parts of the first and second connection parts 51, 52 that are at the furthest distance from the stationary gas manifold assembly 3 together with the expansion member 53a form an outer wall to a gas channel 7 extending around the stationary gas manifold assembly 3. The gas channel 7 is used to supply inert gas that prevents precursor gas from the connection point of the stationary gas manifold assembly and the reaction chamber 1 back to the structure of the gas manifold assembly 3. The expansion member 53a surrounds the stationary gas manifold assembly 3 in order to provide a gas-tight structure together with the first and second connection parts 51, 52. In this embodiment of the invention, the expansion member 53a is a bellows structure.

[0027] The flexible connection part 53 also comprises a flexible member 53b connected to the first and second connection parts 51, 52 and separate from the expansion member 53a. The flexible member 53b is arranged to expand and contract in response to contact between the first connection face of the flexible outer flange assembly 5 and the second connection face 11 of the reaction chamber 1 in order to keep the contact tight. In this embodiment of the invention, the flexible member 53b is a spring. Although the figure only shows two springs, the flexible outer flange assembly 5 is coaxially arranged around the stationary gas manifold assembly 3, and thus the flexible member 53b is also arranged around the stationary gas manifold assembly 3 at a distance.

[0028] Figure 3A connection device according to the present application is shown in another position, wherein the first connection face 6 and the second connection face 11 are against each other, such that a connection between the reaction chamber 2 and the stationary gas manifold assembly 3 is established and the flow connection between the reaction chamber 2 and the stationary gas manifold assembly 3 to the vacuum chamber is closed. The gas channel 7 formed by the coaxial gap between the stationary gas manifold assembly 3 and the connection device 4 is provided to supply inert gas around the stationary gas manifold assembly 3 to set up a diffusion barrier to prevent thin film deposition from the outer structure. The precursor gas is supplied through the gas channel of the stationary gas manifold assembly 3. When the first surface 6 of the connection device 4 and the second surface 11 of the reaction chamber 2 are tightly connected to each other, the flexible outer flange assembly 5 around the stationary gas manifold assembly 3 is activated, such that the flexible part 53b pushes the first surface 6 towards the second surface 11 to keep the connection between the surfaces tight and the expansion member 53a adjusts the expansion or contraction of the flexible part 53b, such that the gas channel 7 around the stationary gas manifold assembly 3 is gas tight.

[0029] Figure 4 The connection device 4 according to the present application is shown in more detail. The connection device 4 comprises a first connection face 6 and a flexible outer flange assembly 5. The flexible outer flange assembly 5 comprises a first connection part 51, a second connection part 52 and a flexible connection part 53 between the first connection part 51 and the second connection part 52. The first connection face 6 is provided on the first connection part 51. The second connection part 52 is attached to the stationary gas manifold assembly 3 and the flexible connection part 53 is connected to the second connection part 52, which connects the first connection part 51 to the second connection part 52 via the flexible connection part 53. When the flexible connection part 53 expands or contracts, the first connection face 6 moves according to the movement of the flexible connection part 53. The flexible connection part 53 also allows for a tilting movement, such that when the second connection face 11 of the reaction chamber 1 meets the first connection face 6 with an angle with respect to the first connection face 6, the connection between the first connection face 6 and the second connection face 11 becomes tight due to the tilting of the first connection face 6 according to the position of the second connection face 11.

[0030] Figure 4 A preloaded spring forming the flexible part 53b is shown, but in order to show that both the first connection part 51 and the second connection part 52 comprise surfaces against which the expansion member 53a is provided, the expansion member 53a is omitted from the figure.

[0031] The present application has been described above in connection with examples shown in the figures. However, the present application is by no means limited to the examples described above, but can vary within the scope of the claims.

Claims

1. An atomic layer deposition apparatus having a reaction chamber (1) provided inside a vacuum chamber and a stationary gas manifold assembly (3) fixedly provided in the atomic layer deposition apparatus and arranged to supply gas to the reaction chamber (1) from outside the vacuum chamber, characterized in that, The reaction chamber (1) is a movable reaction chamber (1) arranged to be movable relative to the vacuum chamber and the fixed gas manifold assembly (3), the atomic layer deposition apparatus further comprising: a connection arrangement (4) coupling the movable reaction chamber (1) to the fixed gas manifold assembly (3), the connection arrangement (4) comprising: - a flexible outer flange assembly (5) surrounding the fixed gas manifold assembly (3); and - a first connection face (6) connected to a second connection face (11) of the reaction chamber (1), The flexible outer flange assembly (5) comprises: a first connection part (51) having the first connection face (6); a second connection part (52) attached to the fixed gas manifold assembly (3); and a flexible connection part (53) connecting the first connection part (51) and the second connection part (52) together such that the first connection part (51) is movable relative to the second connection part (52), The flexible connection part (53) provides up and down movement of the first connection face (6) relative to the second connection face (11).

2. The atomic layer deposition apparatus according to claim 1, characterized by The flexible outer flange assembly (5) is coaxially arranged to surround the fixed gas manifold assembly (3) such that the flexible outer flange assembly (5) and the fixed gas manifold assembly (3) have a coaxial gap, thereby forming a gas passage (7) between the flexible outer flange assembly (5) and the fixed gas manifold assembly (3).

3. The atomic layer deposition apparatus according to claim 1, characterized by The flexible connection part (53) is arranged to provide vertical movement for the first connection face (6); or The flexible connection part (53) is arranged to provide tilting movement for the first connection face (6); or The flexible connection part (53) is arranged to provide both vertical and tilting movement for the first connection face (6).

4. The atomic layer deposition apparatus according to claim 1, characterized by The flexible connection part (53) comprises: an expansion member (53a) connected to the first connection part (51) and the second connection part (52) and surrounding the fixed gas manifold assembly (3), the expansion member (53a) extending between the first connection part (51) and the second connection part (52), the first connection part (51) and the second connection part (52) together forming a gas-tight wall surrounding the fixed gas manifold assembly (3).

5. The atomic layer deposition apparatus according to claim 4, characterized by The expansion member (53a) is a bellows structure.

6. The atomic layer deposition apparatus according to claim 4, wherein The flexible connection part (53) further comprises: a flexible member (53b) connected to the first connection part (51) and the second connection part (52) and separate from the expansion member (53a), the flexible member (53b) being arranged to expand and contract in dependence of contact between the first connection face (6) of the flexible outer flange assembly (5) and the second connection face (11) of the reaction chamber (1) to maintain the contact tight.

7. An atomic layer deposition apparatus according to claim 6, characterised in that The flexible member (53b) comprises a preloaded spring extending between the first connection part (51) and the second connection part (52).

8. The atomic layer deposition apparatus according to claim 6, characterized by The flexible member (53b) is arranged to provide vertical movement for the first connection face (6); or The flexible part (53b) is arranged to provide tilting movement for the first connection surface (6); or The flexible part (53b) is arranged to provide vertical and tilting movement for the first connection surface (6).

9. The atomic layer deposition apparatus according to claim 1, wherein The stationary gas manifold assembly (3) comprises a housing structure enclosing a rigid gas tube extending within the housing structure from a gas unit to an end face of the housing structure.

10. The atomic layer deposition apparatus according to claim 1, wherein The vacuum chamber and the stationary gas manifold assembly (3) are fixed together, and the stationary gas manifold assembly (3) is arranged to extend into the vacuum chamber from outside the vacuum chamber through a wall of the vacuum chamber, the connection device (4) being arranged within the vacuum chamber.

11. The atomic layer deposition apparatus according to claim 1, characterized by The atomic layer deposition device comprises a plurality of stationary gas manifold assemblies (3) fixedly arranged in the atomic layer deposition device such that a first stationary gas manifold assembly (3) is arranged to supply gas to the reaction chamber (1) from outside the vacuum chamber, and a second stationary gas manifold assembly (3) is arranged to discharge gas from the reaction chamber (1) to outside the vacuum chamber, the atomic layer deposition device further comprising: a gas source for supplying gas to the reaction chamber (1) through the first stationary gas manifold assembly (3); and a discharge device for discharging gas from the reaction chamber (1) through the second stationary gas discharge manifold assembly; The connection device (4) is arranged to connect the movable reaction chamber (1) to each of the stationary gas manifold assemblies (3).

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