A semiconductor blue laser

Abstract

The present invention proposes a semiconductor blue laser, comprising a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper confinement layer arranged in sequence from bottom to top, a first sub-confinement factor enhancement layer is arranged between the lower confinement layer and the lower waveguide layer, a second sub-confinement factor enhancement layer and a third sub-confinement factor enhancement layer are arranged between the upper confinement layer and the electron blocking layer, the first sub-confinement factor enhancement layer, the second sub-confinement factor enhancement layer and the third sub-confinement factor enhancement layer constitute a confinement factor enhancement layer, and the confinement factor enhancement layer has distribution characteristics of electron effective mass, Philips ionization degree, dielectric constant and piezoelectric polarization coefficient. The present invention suppresses the refractive index dispersion caused by high-concentration carrier fluctuations in the laser, suppresses the problem of confinement factor reduction caused by wavelength enhancement, and improves the mode gain of the laser.

Description

Technical Field

[0001] The present application relates to the field of semiconductor optoelectronic devices, and in particular to a semiconductor blue light laser. Background Art

[0002] Lasers are widely used in laser display, laser TV, laser projector, communication, medical treatment, weapons, guidance, ranging, spectral analysis, cutting, precision welding, high-density optical storage and other fields. There are many types of lasers, and the classification methods are also diverse, mainly including solid, gas, liquid, semiconductor and dye types of lasers; compared with other types of lasers, all-solid-state semiconductor lasers have the advantages of small size, high efficiency, light weight, good stability, long life, simple and compact structure, and miniaturization.

[0003] There are big differences between lasers and nitride semiconductor light-emitting diodes:

[0004] 1) Laser is generated by stimulated radiation of carriers, the spectrum half-width is small, the brightness is very high, and the output power of a single laser can be in the W level, while nitride semiconductor light-emitting diodes are spontaneously radiated, and the output power of a single light-emitting diode is in the mW level;

[0005] 2) The current density of the laser is up to KA / cm 2 , which is more than 2 orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more serious Auger recombination, stronger polarization effect, more serious electron-hole mismatch, and more serious efficiency attenuation Droop effect;

[0006] 3) The spontaneous transition radiation of the light-emitting diode is incoherent light that transitions from a high energy level to a low energy level without any external influence, while the laser is stimulated transition radiation, and the energy of the induced photon should be equal to the difference in the energy level of the electron transition, producing the same coherent light as the photon and the induced photon;

[0007] 4) Different principles: When an external voltage is applied to a light-emitting diode, electron holes jump to the active layer or pn junction to produce radiative recombination light, while a laser can only emit when the lasing conditions are met. The carrier distribution in the active region must be reversed, and the stimulated radiation light oscillates back and forth in the resonant cavity. The propagation in the gain medium amplifies the light, and the threshold condition is met so that the gain is greater than the loss, and finally the laser is output.

[0008] Nitride semiconductor lasers have the following problems: the refractive index dispersion of the laser, the fluctuation of high-concentration carrier concentration affects the refractive index of the active layer, and the confinement factor decreases with increasing wavelength, resulting in a decrease in the mode gain of the laser. The light field of the confinement layer is dissipated, and the light field mode leaks to the substrate to form a standing wave, which leads to low substrate mode suppression efficiency and poor far-field image FFP quality. Summary of the invention

[0009] To solve one of the above technical problems, the present invention provides a semiconductor blue laser.

[0010] An embodiment of the present invention provides a semiconductor blue light laser, comprising a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper confinement layer, which are arranged in sequence from bottom to top; a first sub-confinement factor enhancement layer is arranged between the lower confinement layer and the lower waveguide layer; a second sub-confinement factor enhancement layer and a third sub-confinement factor enhancement layer are arranged between the upper confinement layer and the electron blocking layer; the first sub-confinement factor enhancement layer, the second sub-confinement factor enhancement layer and the third sub-confinement factor enhancement layer constitute a confinement factor enhancement layer; and the confinement factor enhancement layer has distribution characteristics of electron effective mass, Phillips ionization degree, dielectric constant and piezoelectric polarization coefficient.

[0011] Preferably, the electron effective mass distribution of the first sub-confinement factor enhancement layer is of "L" type inverse symmetry, the electron effective mass distribution of the second sub-confinement factor enhancement layer is of "L" type, the electron effective mass distribution of the third sub-confinement factor enhancement layer is of "I" type, and the electron effective mass of the first sub-confinement factor enhancement layer ≤ the electron effective mass of the second sub-confinement factor enhancement layer ≤ the electron effective mass of the third sub-confinement factor enhancement layer.

[0012] Preferably, the Phillips ionization degree distribution of the first sub-confinement factor enhancement layer is in the shape of a "7", the Phillips ionization degree distribution of the second sub-confinement factor enhancement layer is inversely symmetrical to the "7", the Phillips ionization degree distribution of the third sub-confinement factor enhancement layer is in the shape of a "I", and the Phillips ionization degree of the third sub-confinement factor enhancement layer is ≤ the Phillips ionization degree of the second sub-confinement factor enhancement layer ≤ the Phillips ionization degree of the first sub-confinement factor enhancement layer.

[0013] Preferably, the dielectric constant distribution of the first sub-confinement factor enhancement layer is in the shape of a "7", the dielectric constant distribution of the second sub-confinement factor enhancement layer is inversely symmetrical to the "7", the dielectric constant distribution of the third sub-confinement factor enhancement layer is in the shape of a "I", and the dielectric constant of the third sub-confinement factor enhancement layer is ≤ the dielectric constant of the second sub-confinement factor enhancement layer ≤ the dielectric constant of the first sub-confinement factor enhancement layer.

[0014] Preferably, the piezoelectric polarization coefficient distribution of the first sub-confinement factor enhancement layer is "L"-shaped and inversely symmetrical, the piezoelectric polarization coefficient distribution of the second sub-confinement factor enhancement layer is "L"-shaped, and the piezoelectric polarization coefficient distribution of the third sub-confinement factor enhancement layer is "I"-shaped, and the piezoelectric polarization coefficient of the first sub-confinement factor enhancement layer is ≤ the piezoelectric polarization coefficient of the second sub-confinement factor enhancement layer ≤ the piezoelectric polarization coefficient of the third sub-confinement factor enhancement layer.

[0015] Preferably, the doping element of the first sub-limiting factor enhancement layer is Si, and the doping concentration of Si is 5E17cm -3 To 1E19cm -3 ;

[0016] The second sub-confinement factor enhancement layer and the third sub-confinement factor enhancement layer are unintentionally doped;

[0017] The background Mg doping concentration of the second sub-confinement factor enhancement layer is 1E15 cm -3 To 1E17cm -3 ;

[0018] The background Mg doping concentration of the third sub-confinement factor enhancement layer is 1E16 cm -3 To 5E18cm -3 .

[0019] Preferably, the first and second sub-confinement factor enhancement layers are any one or any combination of InGaN, GaN and InN, and the third sub-confinement factor enhancement layer is any one or any combination of AlGaN, AlInGaN, AlInN and GaN.

[0020] Preferably, the active layer is a periodic structure composed of a well layer and a barrier layer, and the period x is: 1≤x≤3;

[0021] The well layer of the active layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, and the thickness of the well layer is p: 10≤p≤100 angstroms;

[0022] The barrier layer of the active layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, and the barrier layer thickness is q: 10≤q≤200 angstroms.

[0023] Preferably, the upper waveguide layer, upper confinement layer, lower waveguide layer, electron blocking layer and lower confinement layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

[0024] Preferably, the substrate comprises sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , any one of magnesia-aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrates.

[0025] The beneficial effects of the present invention are as follows: the present invention sets a restriction factor enhancement layer in a semiconductor blue laser, and designs the distribution characteristics of the electron effective mass, Philips ionization degree, dielectric constant and piezoelectric polarization coefficient in the restriction factor enhancement layer, so that the restriction factor enhancement layer suppresses the refractive index dispersion caused by the high concentration carrier fluctuation in the laser, suppresses the restriction factor reduction problem caused by wavelength enhancement, and improves the mode gain of the laser. At the same time, the restriction factor enhancement layer can suppress the light field dissipation of the restriction layer, reduce the leakage of the light field mode to the substrate, reduce the focus spot size, and improve the restriction factor, beam quality factor and far-field image quality of the laser. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0027] Figure 1 A schematic diagram of the structure of a semiconductor blue laser according to an embodiment of the present invention;

[0028] Figure 2 This is a SIMS secondary ion mass spectrum of the semiconductor blue laser described in an embodiment of the present invention.

[0029] Reference numerals:

[0030] 100, substrate, 101, lower confinement layer, 102, lower waveguide layer, 103, active layer, 104, upper waveguide layer, 105, electron blocking layer, 106, upper confinement layer, 107, confinement factor enhancement layer;

[0031] 107a, a first sub-limiting factor enhancement layer, 107b, a second sub-limiting factor enhancement layer, 107c, a third sub-limiting factor enhancement layer. DETAILED DESCRIPTION

[0032] In order to make the technical solutions and advantages in the embodiments of the present application more clearly understood, the exemplary embodiments of the present application are further described in detail below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present application, rather than an exhaustive list of all the embodiments. It should be noted that the embodiments in the present application and the features in the embodiments can be combined with each other without conflict.

[0033] like Figure 1 and Figure 2 As shown, this embodiment provides a semiconductor blue laser, comprising a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105 and an upper confinement layer 106 arranged in sequence from bottom to top. A confinement factor enhancement layer 107 is arranged in the semiconductor blue laser.

[0034] Specifically, in this embodiment, the semiconductor blue laser is sequentially provided with a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105 and an upper confinement layer 106 from bottom to top. A confinement factor enhancement layer 107 is provided near the confinement layer of the semiconductor blue laser. The confinement factor enhancement layer 107 has distribution characteristics of electron effective mass, Philips ionization degree, dielectric constant and piezoelectric polarization coefficient to improve the performance of the semiconductor blue laser.

[0035] The effective mass of an electron is the effective mass of an electron. When describing the external force acting on an electron in a semiconductor, on the one hand, it is affected by the external force, and on the other hand, it interacts with the atoms and electrons inside the semiconductor, making it difficult to solve the relationship between force and speed. The introduction of effective mass can summarize the role of the internal potential field of the semiconductor, so that when solving the law of the semiconductor under the action of external force, the internal potential field effect can be ignored.

[0036] Philips ionicity is one of the basic physical parameters of GaN materials, which characterizes the ionization characteristics and electronic characteristic parameters of the material. The specific related concepts of Philips ionicity are described in detail in "JA Van Vechten. Quantum Dielectric Theory of Electronegativity in Covalent Systems. III. Pressure-Temperature Phase Diagrams, Heats of Mixing, and Distribution Coefficients [J]. Phys. Rev. B, 1973, 7: 1479-1507."

[0037] The dielectric constant refers to the energy generated by a part of the charge in a material with a lattice structure under the action of an electric field. It is a physical quantity that is linearly related to the intensity of the electric field. It is the dielectric constant of the internal potential change that occurs when an object generates a bias current in an electric field.

[0038] Piezoelectric polarization refers to the phenomenon that when some dielectrics are deformed by external forces in a certain direction, polarization will occur inside them, and opposite positive and negative charges will appear on their two opposite surfaces. When the external force is removed, it will return to an uncharged state. This phenomenon is called the positive piezoelectric effect. When the direction of the force changes, the polarity of the charge also changes. Conversely, when an electric field is applied in the polarization direction of the dielectric, these dielectrics will also deform. When the electric field is removed, the deformation of the dielectric disappears. This phenomenon is called the inverse piezoelectric effect.

[0039] By designing the distribution characteristics of the effective mass of electrons, Philips ionization degree, dielectric constant and piezoelectric polarization coefficient in the confinement factor enhancement layer 107, the confinement factor enhancement layer 107 can suppress the refractive index dispersion caused by the fluctuation of high-concentration carriers in the laser, suppress the problem of the reduction of the confinement factor caused by the wavelength enhancement, and improve the mode gain of the laser. At the same time, the confinement factor enhancement layer 107 can suppress the light field dissipation of the confinement layer, reduce the leakage of the light field mode to the substrate 100, reduce the focus spot size, and improve the confinement factor, beam quality factor and far-field image quality of the laser.

[0040] Further, in this embodiment, the confinement factor enhancement layer 107 includes a first sub-confinement factor enhancement layer 107a, a second sub-confinement factor enhancement layer 107b and a third sub-confinement factor enhancement layer 107c. The first sub-confinement factor enhancement layer 107a is arranged between the lower confinement layer 101 and the lower waveguide layer 102, and the second sub-confinement factor enhancement layer 107b and the third sub-confinement factor enhancement layer 107c are arranged between the upper confinement layer 106 and the electron blocking layer 105. The first sub-confinement factor enhancement layer 107a, the second sub-confinement factor enhancement layer 107b and the third sub-confinement factor enhancement layer 107c all have specific electron effective mass, Philips ionization degree, dielectric constant and piezoelectric polarization coefficient distribution characteristics, which will be described below respectively.

[0041] (1) Electron effective mass

[0042] The electron effective mass distribution characteristics of the first sub-confinement factor enhancement layer 107a, the second sub-confinement factor enhancement layer 107b and the third sub-confinement factor enhancement layer 107c are specifically manifested as follows:

[0043] The electron effective mass distribution of the first sub-confinement factor enhancement layer 107a is an “L” type with reverse symmetry, i.e., an “anti-L” type distribution;

[0044] The electron effective mass distribution of the second sub-confinement factor enhancement layer 107b is "L" type;

[0045] The electron effective mass distribution of the third confinement factor enhancement sub-layer 107c is in a straight line shape.

[0046] The electron effective mass relationship of the first sub-confinement factor enhancement layer 107a, the second sub-confinement factor enhancement layer 107b and the third sub-confinement factor enhancement layer 107c is specifically as follows:

[0047] 0.05≤the electron effective mass of the first sub-confinement factor enhancing layer 107a≤the electron effective mass of the second sub-confinement factor enhancing layer 107b≤the electron effective mass of the third sub-confinement factor enhancing layer 107c≤0.5.

[0048] (2) Philips ionization degree

[0049] The Philips ionization degree distribution characteristics of the first sub-confinement factor enhancement layer 107a, the second sub-confinement factor enhancement layer 107b and the third sub-confinement factor enhancement layer 107c are specifically shown as follows:

[0050] The Philips ionization degree distribution of the first sub-confinement factor enhancement layer 107a is in the shape of "7";

[0051] The Philips ionization degree distribution of the second sub-confinement factor enhancement layer 107b is inversely symmetrical to the shape of a "7", i.e., an "anti-7" distribution;

[0052] The Lipschitz ionization degree distribution of the third sub-confinement factor enhancement layer 107c is in the shape of a straight line.

[0053] The relationship between the Phillips ionization degrees of the first sub-confinement factor enhancement layer 107a, the second sub-confinement factor enhancement layer 107b and the third sub-confinement factor enhancement layer 107c is specifically as follows:

[0054] 0.1≤the Phillips ionization degree of the third sub-confinement factor enhancing layer 107c≤the Phillips ionization degree of the second sub-confinement factor enhancing layer 107b≤the Phillips ionization degree of the first sub-confinement factor enhancing layer 107a≤1.0.

[0055] (3) Dielectric constant

[0056] The dielectric constant distribution characteristics of the first sub-confinement factor enhancement layer 107a, the second sub-confinement factor enhancement layer 107b and the third sub-confinement factor enhancement layer 107c are specifically shown as follows:

[0057] The dielectric constant distribution of the first sub-confinement factor enhancement layer 107a is in the shape of "7";

[0058] The dielectric constant distribution of the second sub-confinement factor enhancement layer 107b is inversely symmetrical to the shape of a "7", i.e., an "inverse 7" distribution;

[0059] The dielectric constant distribution of the third sub-confinement factor enhancement layer 107c is in a straight line shape.

[0060] The dielectric constant relationship among the first sub-confinement factor enhancement layer 107a, the second sub-confinement factor enhancement layer 107b and the third sub-confinement factor enhancement layer 107c is specifically as follows:

[0061] 5≤the dielectric constant of the third sub-confinement factor enhancing layer 107c≤the dielectric constant of the second sub-confinement factor enhancing layer 107b≤the dielectric constant of the first sub-confinement factor enhancing layer 107a≤15.

[0062] (4) Piezoelectric polarization coefficient

[0063] The piezoelectric polarizability distribution characteristics of the first sub-confinement factor enhancement layer 107a, the second sub-confinement factor enhancement layer 107b and the third sub-confinement factor enhancement layer 107c are specifically shown as follows:

[0064] The piezoelectric polarization coefficient distribution of the first sub-confinement factor enhancement layer 107a is inversely symmetric to the “L” type, that is, an “inverse L” type distribution;

[0065] The piezoelectric polarization coefficient distribution of the second sub-confinement factor enhancement layer 107b is "L" type;

[0066] The piezoelectric polarization coefficient distribution of the third sub-confinement factor enhancing layer 107c is in a straight line shape.

[0067] The piezoelectric polarizability relationship of the first sub-confinement factor enhancement layer 107a, the second sub-confinement factor enhancement layer 107b and the third sub-confinement factor enhancement layer 107c is specifically as follows:

[0068] 0.5≤the piezoelectric polarization coefficient of the first sub-confinement factor enhancing layer 107a≤the piezoelectric polarization coefficient of the second sub-confinement factor enhancing layer 107b≤the piezoelectric polarization coefficient of the third sub-confinement factor enhancing layer 107c≤2.

[0069] The following table shows the performance parameter comparison between the semiconductor blue laser proposed in this embodiment and the traditional semiconductor blue laser:

[0070]

[0071] It can be seen that the semiconductor blue light laser proposed in this embodiment can suppress the light field dissipation of the confinement layer, reduce the light field mode leakage to the substrate 100, reduce the focused spot size, and improve the confinement factor, beam quality factor and far-field image quality of the laser.

[0072] Furthermore, the first sub-confinement factor enhancement layer 107a and the second sub-confinement factor enhancement layer 107b are any one or any combination of InGaN, GaN, and InN. The third sub-confinement factor enhancement layer 107c is any one or any combination of AlGaN, AlInGaN, AlInN, and GaN. The doping element of the first sub-confinement factor enhancement layer 107a is Si, and the doping concentration of Si is 5E17cm -3 To 1E19cm -3 The second sub-confinement factor enhancement layer 107b and the third sub-confinement factor enhancement layer 107c are unintentionally doped. The background Mg doping concentration of the second sub-confinement factor enhancement layer 107b is 1E15 cm -3 To 1E17cm -3 The background Mg doping concentration of the third sub-confinement factor enhancement layer 107c is 1E16 cm -3 To 5E18cm -3 .

[0073] Furthermore, the active layer 103 is a periodic structure composed of a well layer and a barrier layer, and the period x is: 1≤x≤3.

[0074] The well layer of the active layer 103 is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, and the thickness of the well layer is p: 10≤p≤100 angstroms.

[0075] The barrier layer of the active layer 103 is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, and the barrier layer thickness is q: 10≤q≤200 angstroms.

[0076] The upper waveguide layer 104, the upper confinement layer 106, the lower waveguide layer 102, the electron blocking layer 105, and the lower confinement layer 101 are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

[0077] The substrate 100 includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate 100, sapphire / AlN composite substrate 100, sapphire / SiN x , any one of the composite substrates 100 of magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2.

[0078] Obviously, those skilled in the art can make various changes and modifications to the present application without departing from the spirit and scope of the present application. Thus, if these modifications and variations of the present application fall within the scope of the claims of the present application and their equivalents, the present application is also intended to include these modifications and variations.

Claims

1. A semiconductor blue laser, comprising a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper confinement layer arranged in sequence from bottom to top, characterized in that: A first sub-confinement factor enhancement layer is arranged between the lower confinement layer and the lower waveguide layer, a second sub-confinement factor enhancement layer and a third sub-confinement factor enhancement layer are arranged between the upper confinement layer and the electron blocking layer, the first sub-confinement factor enhancement layer, the second sub-confinement factor enhancement layer and the third sub-confinement factor enhancement layer constitute a confinement factor enhancement layer, and the confinement factor enhancement layer has distribution characteristics of electron effective mass, Philips ionization degree, dielectric constant and piezoelectric polarization coefficient; The electron effective mass distribution of the first sub-confinement factor enhancement layer is "L"-shaped and inversely symmetrical, the electron effective mass distribution of the second sub-confinement factor enhancement layer is "L"-shaped, and the electron effective mass distribution of the third sub-confinement factor enhancement layer is "I"-shaped, and the electron effective mass of the first sub-confinement factor enhancement layer is ≤ the electron effective mass of the second sub-confinement factor enhancement layer ≤ the electron effective mass of the third sub-confinement factor enhancement layer; The Philips ionization degree distribution of the first sub-confinement factor enhancement layer is in the shape of a "7", the Philips ionization degree distribution of the second sub-confinement factor enhancement layer is inversely symmetrical to the "7", the Philips ionization degree distribution of the third sub-confinement factor enhancement layer is in the shape of a "1", and the Philips ionization degree of the third sub-confinement factor enhancement layer is ≤ the Philips ionization degree of the second sub-confinement factor enhancement layer ≤ the Philips ionization degree of the first sub-confinement factor enhancement layer; The dielectric constant distribution of the first sub-confinement factor enhancement layer is a "7" shape, the dielectric constant distribution of the second sub-confinement factor enhancement layer is inversely symmetrical to the "7" shape, the dielectric constant distribution of the third sub-confinement factor enhancement layer is a "1" shape, and the dielectric constant of the third sub-confinement factor enhancement layer is ≤ the dielectric constant of the second sub-confinement factor enhancement layer ≤ the dielectric constant of the first sub-confinement factor enhancement layer; The piezoelectric polarization coefficient distribution of the first sub-confinement factor enhancement layer is "L"-shaped and inversely symmetrical, the piezoelectric polarization coefficient distribution of the second sub-confinement factor enhancement layer is "L"-shaped, and the piezoelectric polarization coefficient distribution of the third sub-confinement factor enhancement layer is "I"-shaped, and the piezoelectric polarization coefficient of the first sub-confinement factor enhancement layer is ≤ the piezoelectric polarization coefficient of the second sub-confinement factor enhancement layer ≤ the piezoelectric polarization coefficient of the third sub-confinement factor enhancement layer.

2. The semiconductor blue laser according to claim 1, characterized in that: The doping element of the first sub-confinement factor enhancement layer is Si, and the doping concentration of Si is 5E17cm -3 To 1E19cm -3 ; The second sub-confinement factor enhancement layer and the third sub-confinement factor enhancement layer are unintentionally doped; The background Mg doping concentration of the second sub-confinement factor enhancement layer is 1E15 cm -3 To 1E17cm -3 ; The background Mg doping concentration of the third sub-confinement factor enhancement layer is 1E16 cm -3 To 5E18cm -3 .

3. The semiconductor blue laser according to claim 1, characterized in that: The first and second sub-confinement factor enhancement layers are any one or any combination of InGaN, GaN, and InN, and the third sub-confinement factor enhancement layer is any one or any combination of AlGaN, AlInGaN, AlInN, and GaN.

4. The semiconductor blue laser according to claim 1, characterized in that: The active layer is a periodic structure composed of a well layer and a barrier layer, and the period x is: 1≤x≤3; The well layer of the active layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, and the thickness of the well layer is p: 10≤p≤100 angstroms; The barrier layer of the active layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, and the barrier layer thickness is q: 10≤q≤200 angstroms.

5. The semiconductor blue laser according to claim 1, characterized in that: The upper waveguide layer, upper confinement layer, lower waveguide layer, electron blocking layer and lower confinement layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3 and BN.

6. The semiconductor blue laser according to claim 1, characterized in that: The substrate includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , any one of magnesia-aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrates.

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