Method for monitoring the effective etching of a cleaning agent

Abstract

The application relates to a method for monitoring effective etching of a cleaning reagent, which comprises the following steps: configuring cleaning solutions with different water contents, wherein the cleaning solution comprises triethanolamine, triethanolamine acetate, ammonium fluoride and water; contacting the cleaning solutions with TEOS products to etch the surface of the TEOS products at the same etching temperature; detecting the etching rate of the surface of the TEOS products by the cleaning solutions with different water contents; and establishing a curve of the etching rate changing with the water content of the cleaning solution. The method for monitoring effective etching of a cleaning reagent can accurately and effectively monitor the etching rate and cleaning effect of the cleaning solution.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor, in particular to a method for monitoring effective etching of cleaning reagent. BACKGROUND

[0002] In the manufacturing process of chips, dry etching is adopted for copper process etching. Since there are residues of polymers or metal oxides after etching, cleaning liquid needs to be used to clean the residues. The main components of the commonly used cleaning liquid are triethanolamine, triethanolamine acetate, ammonium fluoride and water. The cleaning liquid has good effect on cleaning after dry etching of chips, and can effectively clean the polymers formed on the sidewall in the dry etching process and the oxide film layer in a short time. However, in the use of the cleaning liquid, the etching rate needs to be controlled to prevent excessive etching due to too fast etching rate of the cleaning liquid in the cleaning process, so as to affect the morphology of the hole in the chip and further cause negative impact on the performance of the chip. SUMMARY

[0003] Therefore, it is necessary to provide a method for monitoring effective etching of cleaning reagent. The method for monitoring effective etching of cleaning reagent can monitor the etching rate of cleaning liquid with different water content, and thus accurately and effectively monitor the etching rate and cleaning effect of the cleaning liquid.

[0004] The present application provides a method for monitoring effective etching of cleaning reagent, characterized in that it comprises:

[0005] configuring cleaning liquid with different water content, wherein the cleaning liquid comprises triethanolamine, triethanolamine acetate, ammonium fluoride and water;

[0006] under the same etching temperature, contacting the cleaning liquid with different water content with TEOS product to etch the surface of the TEOS product;

[0007] detecting the etching rate of the surface of the TEOS product by the cleaning liquid with different water content;

[0008] establishing a curve of the etching rate changing with the water content of the cleaning liquid.

[0009] In some embodiments, after the curve of the etching rate changing with the water content of the cleaning liquid is established, the method further comprises:

[0010] using the curve between the preset etching rate and the preset water content of the cleaning liquid as a target curve.

[0011] In some embodiments, the preset etching rate is 0.1 A / min to 1 A / min.

[0012] In some embodiments, the preset water content is 36% to 40%.

[0013] In some embodiments, detecting the etching rate of the cleaning solution with different water contents on the surface of the TEOS product comprises:

[0014] The etching rate of the TEOS product using the cleaning solution is taken as a preset etching rate, and the etching stable interval is used, which satisfies that the difference between the maximum and minimum values of the etching rate in the etching stable interval is less than 0.2 A / min, and the length of the etching stable interval is 100 s to 200 s.

[0015] In some embodiments, the time difference between the start of the etching stable interval and the start of the etching is 300 s to 500 s.

[0016] In some embodiments, the preset etching rate is the average value of the etching rate in the etching stable interval.

[0017] In some embodiments, the etching temperature is 35°C to 40°C.

[0018] In some embodiments, the water content of the cleaning solution is 20% to 60%.

[0019] In some embodiments, the cleaning solution further comprises a chelate inhibitor.

[0020] In the above method for monitoring the effective etching of the cleaning agent, the TEOS product is etched using cleaning solutions with different water contents, and the etching rate is detected to obtain the corresponding relationship between the etching rate of the TEOS product and the water content of the cleaning solution with different water contents. The cleaning solution comprises triethanolamine, triethanolamine acetate, ammonium fluoride and water. The cleaning solution has a significantly lower etching rate within the effective range of water content, and the etching rate outside the effective range of water content is significantly improved. According to the characteristics of the etching rate change of the cleaning solution on the TEOS product, within the effective range, the influence of the fluctuation of the etching rate caused by other errors on the judgment of the water content of the etching solution can be reduced. The method for monitoring the effective etching of the cleaning agent can accurately and effectively monitor the etching rate and cleaning effect of the cleaning solution. BRIEF DESCRIPTION OF DRAWINGS

[0021] Figure 1 The etching rate of the SYS9058 cleaning solution with different water contents on the Cu film layer at the same temperature is shown in the schematic diagram;

[0022] Figure 2 The etching rate of the SYS9058 cleaning solution with different water contents on the TEOS film layer at the same temperature is shown in the schematic diagram;

[0023] Figure 3 The relationship between etching rate of Cu film layer and water content of SYS9058 cleaning solution with different water content at the same temperature;

[0024] Figure 4 The etching rate of BD film layer by SYS9058 cleaning solution with different water content at the same temperature;

[0025] Figure 5 The etching rate of TiN film layer by SYS9058 cleaning solution with different water content at the same temperature;

[0026] Figure 6 The etching rate of NDC film layer by SYS9058 cleaning solution with different water content at the same temperature;

[0027] Figure 7 The etching rate of SION film layer by SYS9058 cleaning solution with different water content at the same temperature;

[0028] Figure 8 The flow chart of the method for monitoring effective etching of cleaning reagent provided by an embodiment of the present application;

[0029] Figure 9 The relationship between etching rate and etching time in each repeat group in experimental example 1. DETAILED DESCRIPTION

[0030] In order to make the above objectives, features and advantages of the present application more apparent, specific embodiments of the present application will be described in detail below with reference to the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. However, the present application can be practiced in a number of different ways beyond the specific embodiments described and it is therefore contemplated to cover all such modifications as fall within the scope of the application. It is to be understood that other embodiments can be employed and structural or procedural changes can be made without departing from the scope of the present application.

[0031] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in the description herein is for describing particular embodiments only and is not intended to be limiting of the application. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0032] In the description of the present application, it needs to be understood that the orientation or positional relationship indicated by the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the devices or elements indicated must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application.

[0033] In addition, the terms "first", "second" are only for the purpose of description, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features defined with "first", "second" can explicitly or implicitly include at least one of the features. In the description of the present application, the meaning of "a plurality of" is at least two, such as two, three, etc., unless otherwise explicitly specified and limited.

[0034] In the present application, unless otherwise explicitly specified and limited, the terms "mounting", "connection", "connection", "fixing" and the like should be understood in a broad sense, for example, it can be fixed connection, or detachable connection, or integral; it can be mechanical connection, or electrical connection; it can be directly connected, or indirectly connected through an intermediate medium, it can be the internal communication of two elements or the interaction relationship between two elements, unless otherwise explicitly limited. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0035] At present, dry etching is used for copper process etching in the manufacturing process of chips. Since there will be residues of polymers or metal oxides after etching, cleaning liquid needs to be used to clean the residues. The main components of the commonly used cleaning liquid are triethanolamine, triethanolamine acetate, ammonium fluoride and water. The cleaning effect of the cleaning liquid on the dry etching of the chip is good. However, in the use of the cleaning liquid, the etching rate needs to be controlled to prevent excessive etching due to the too fast etching rate of the cleaning liquid in the cleaning process, which affects the morphology of the hole in the chip, and further negatively affects the performance of the chip.

[0036] The present application found in the research that the above cleaning liquid is applicable to the cleaning after dry etching of Cu, Al, W, Ti, TiN, SIN, SiON or other low dielectric constant materials. However, the etching rate of the cleaning liquid on the above materials is high. For example, taking SYS9058 cleaning liquid as an example, the etching rate of SYS9058 cleaning liquid with different water content on Cu film layer at the same temperature is as follows:Figure 1 As shown in Table 1,

[0037] Table 1

[0038]

[0039] As shown in Table 1 and Figure 1 As shown in Table 1, the etching rate of the SYS9058 cleaning solution with a water content of 35% to 41% on the Cu film layer is relatively large, and is all above 3.8 A / min. In the case that the etching rate of the SYS9058 cleaning solution with different water contents on the Cu film layer is relatively large, the etching rate of the SYS9058 cleaning solution with a certain water content on the Cu film layer will have a large fluctuation range, and it is difficult to determine whether the error is caused by the change of the water content of the cleaning solution or other factors. The large fluctuation of the etching rate of the SYS9058 cleaning solution on the Cu film layer still exists after a long time of etching. In the face of the above problems, the applicant adopts the following scheme of etching the TEOS product using cleaning solutions with different water contents, which can accurately monitor the effective etching rate of the cleaning solution. It can be understood that the water content in the present application represents the mass percentage of water in the cleaning solution.

[0040] An embodiment of the present application provides a method for monitoring the effective etching of a cleaning reagent, comprising:

[0041] S110: configuring cleaning solutions with different water contents, the cleaning solution comprising triethanolamine, triethanolamine acetate, ammonium fluoride and water.

[0042] S120: contacting the TEOS product with the cleaning solution with different water contents at the same etching temperature to etch the surface of the TEOS product.

[0043] S130: detecting the etching rate of the cleaning solution with different water contents on the surface of the TEOS product.

[0044] S140: establishing a curve of the change of the etching rate with the water content of the cleaning solution.

[0045] In the method for monitoring the effective etching of the cleaning reagent, the TEOS product is etched by using cleaning solutions with different water contents, and the etching rate is detected to obtain the corresponding relationship between the etching rate of the TEOS product and the water content of the cleaning solution. The cleaning solution includes triethanolamine, triethanolamine acetate, ammonium fluoride and water. The cleaning solution has a significantly lower etching rate within the effective range of the water content, and the etching rate is significantly increased outside the effective range of the water content. According to the characteristics of the etching rate change of the cleaning solution to the TEOS product, within the effective range, the influence of the fluctuation of the etching rate caused by other errors on the judgment of the water content of the etching solution can be reduced. The method for monitoring the effective etching of the cleaning reagent can accurately and effectively monitor the etching rate and cleaning effect of the cleaning solution.

[0046] It can be understood that the chip copper process refers to the copper material and related processes used in the chip manufacturing process. The main processes of the chip copper process include: copper chemical mechanical polishing (CMP), copper filling, copper etching, etc. Among them, CMP is one of the most important processes in the chip copper process. CMP is a process that polishes the surface of copper through mechanical grinding and chemical reaction. In chip manufacturing, CMP can be used to polish the surface of copper lines and copper holes to improve the performance and reliability of the chip. Copper filling is another important process in the chip copper process. Copper filling is to fill copper material into the copper lines and copper holes of the chip to improve the conductivity and reliability of the chip. The process of copper filling includes physical vapor deposition (PVD), chemical vapor deposition (CVD) and electrochemical deposition (ECD), etc. Copper etching is another important process in the chip copper process. In chip manufacturing, copper etching can be used to remove unnecessary copper material to form the circuit and structure of the chip. The process of copper etching includes wet etching and dry etching, etc.

[0047] In some embodiments, after the curve of the etching rate changing with the water content of the cleaning solution is established, the method further comprises: taking the curve between the preset etching rate and the preset water content of the cleaning solution as a target curve.

[0048] In some embodiments, the preset etching rate is 0.1 A / min to 1 A / min. When the preset etching rate is 0.1 A / min to 1 A / min, the etching rate stability of the cleaning solution with a certain water content to the TEOS product is higher. Optionally, the preset etching rate is 0.1 A / min, 0.2 A / min, 0.3 A / min, 0.4 A / min, 0.5 A / min, 0.6 A / min, 0.7 A / min, 0.8 A / min, 0.9 A / min or 1 A / min.

[0049] In some embodiments, the preset water content is 36% to 40%.

[0050] The etching rate of the cleaning solution SYS9058 with different water content on the TEOS film at the same temperature is shown in Table 2 and Figure 2

[0051] Table 2

[0052]

[0053] From Table 2 and Figure 2 It can be seen that the etching rate of the cleaning solution on the TEOS product is obviously lower within the effective range of the preset water content, and the etching rate is obviously improved outside the effective range of the water content. According to the characteristics of the etching rate of the cleaning solution on the TEOS product, within the effective range, the influence of the fluctuation of the etching rate caused by other errors on the judgment of the water content of the etching solution can be reduced. The method for monitoring the effective etching of the cleaning agent can accurately and effectively monitor the etching rate and cleaning effect of the cleaning solution.

[0054] In one embodiment, the target curve is y = 80000x 3 -90279x 2 +33919x-4242.5, R²=0.9957, wherein y is the preset etching rate, x is the preset water content, and R² is the variance.

[0055] Referring to Figures 2-3 It can be seen that within the range of the preset water content, the etching rate of the cleaning solution on the TEOS product and the water content of the cleaning solution have a unique correlation, and by using the correlation, the etching rate and cleaning effect of the cleaning solution can be accurately and effectively monitored.

[0056] Meanwhile, the present application found in the research that the relationship between the etching rate of the cleaning solution with different water content on the silica (BD) film and the water content is shown in Table 3 and Figure 4

[0057] Table 3

[0058]

[0059] The relationship between the etching rate of the cleaning solution with different water content on the titanium nitride (TiN) film and the water content is shown in Table 4 and Figure 5

[0060] Table 4

[0061]

[0062] The relationship between the etching rate of the cleaning solution with different water content on the silicon carbide (NDC) film and the water content is shown in Table 5 and Figure 6

[0063] ​​​​Table 5

[0064]

[0065] The relationship between the etching rate of the SiON film and the water content of the cleaning solution with different water contents is shown in Table 6 and Figure 7

[0066] Table 6

[0067]

[0068] By comparing the relationship between the etching rate of each film layer and the water content of the cleaning solution with different water contents, it can be found that the other film layers do not have the special correlation between the etching rate and the water content of the cleaning solution when etching the TEOS film layer. The etching rate of the cleaning solution on the TEOS product and the water content of the cleaning solution have a unique correlation, which can accurately and effectively monitor the etching rate and cleaning effect of the cleaning solution.

[0069] Referring to Figure 8 In some embodiments, the method for monitoring the effective etching of the cleaning reagent comprises:

[0070] S110: configuring a cleaning solution with different water contents, the cleaning solution comprising triethanolamine, triethanolamine acetate, ammonium fluoride and water.

[0071] In some embodiments, the cleaning solution further comprises a chelate inhibitor.

[0072] In some embodiments, the cleaning solution is SYS9058 dry etching cleaning solution.

[0073] S120: contacting the TEOS product with the cleaning solution with different water contents at the same etching temperature to etch the surface of the TEOS product.

[0074] S130: detecting the etching rate of the cleaning solution with different water contents on the surface of the TEOS product.

[0075] In some embodiments, detecting the etching rate of the cleaning solution with different water contents on the surface of the TEOS product comprises: etching the TEOS product using the cleaning solution, taking the etching rate in the etching stable interval as the preset etching rate, the etching stable interval satisfying: the difference between the maximum value and the minimum value of the etching rate in the etching stable interval is less than 0.2 A / min, and the length of the etching stable interval is 100s-200s.

[0076] ​The present application found in the research that when using a certain water content of SYS9058 cleaning solution to etch TEOS products, the etching rate is faster and the fluctuation of etching rate is larger in a certain period of time at the beginning of etching, and the instability is higher. The present application found that this is because the newly grown TEOS product (film) has a large number of silicon-oxygen bonds on the surface of the film layer, and the density of the surface of the film layer is low, which leads to the initial etching rate of the SYS9058 cleaning solution to the TEOS product being too fast. Therefore, the above-mentioned method for monitoring the effective etching of the cleaning reagent is further improved, that is, the cleaning solution is used to etch the TEOS product, and after a period of time, the etching rate is stable, that is, it reaches the etching stable interval, and then the etching rate of the cleaning solution to the TEOS product is detected. The difference between the maximum and minimum values of the etching rate in the etching stable interval of 100s-200s is less than 0.2A / min, so that an accurate value of the etching rate of a certain water content of SYS9058 cleaning solution to TEOS product with less error can be obtained.

[0077] In some embodiments, the difference between the maximum and minimum values of the etching rate in the etching stable interval is less than 0.2A / min. In some embodiments, the difference between the maximum and minimum values of the etching rate in the etching stable interval is less than 0.18A / min. In some embodiments, the difference between the maximum and minimum values of the etching rate in the etching stable interval is less than 0.16A / min. In some embodiments, the difference between the maximum and minimum values of the etching rate in the etching stable interval is less than 0.14A / min. In some embodiments, the difference between the maximum and minimum values of the etching rate in the etching stable interval is less than 0.12A / min. In some embodiments, the difference between the maximum and minimum values of the etching rate in the etching stable interval is less than 0.1A / min. In some embodiments, the difference between the maximum and minimum values of the etching rate in the etching stable interval is less than 0.08A / min. In some embodiments, the difference between the maximum and minimum values of the etching rate in the etching stable interval is less than 0.06A / min. In some embodiments, the difference between the maximum and minimum values of the etching rate in the etching stable interval is less than 0.04A / min. In some embodiments, the difference between the maximum and minimum values of the etching rate in the etching stable interval is less than 0.02A / min.

[0078] When the difference between the maximum and minimum values of the etching rate in the time period of 100s-200s satisfies the condition, it can be determined that the SYS9058 cleaning solution is stable for etching the TEOS product, and the etching rate is then calculated and used as the etching rate of the cleaning solution with the water content for the TEOS product, with small error and high accuracy. Optionally, the length of the etching stable interval is 100s, 105s, 110s, 115s, 120s, 125s, 130s, 135s, 140s, 145s, 150s, 155s, 160s, 165s, 170s, 175s, 180s, 185s, 190s, 195s or 200s.

[0079] In some embodiments, the time difference between the start of the etching stable interval and the start of the etching is 300s-500s. Within the range of the time difference between the start of the etching stable interval and the start of the etching, the etching rate of the cleaning solution for the TEOS product is stable. Optionally, the time difference between the start of the etching stable interval and the start of the etching is 300s, 310s, 320s, 330s, 340s, 350s, 360s, 370s, 380s, 390s, 400s, 410s, 420s, 430s, 440s, 450s, 460s, 470s, 480s, 490s or 500s. The specific test results are described in the experimental examples below.

[0080] In some embodiments, the preset etching rate is the average value of the etching rate in the etching stable interval.

[0081] S140: Establishing a curve of the etching rate changing with the water content of the cleaning solution.

[0082] In some embodiments, the etching temperature is 35℃-40℃. Optionally, the etching temperature is 35℃, 35.5℃, 36℃, 36.5℃, 37℃, 37.5℃, 38℃, 38.5℃, 39℃, 39.5℃ or 40℃.

[0083] In some embodiments, the water content of the cleaning solution is 20%-60%. Optionally, the water content of the cleaning solution is 30%-50%. Further optionally, the water content of the cleaning solution is 30%, 31%, 32%, 33%, 34%, 35%, 36%, 37%, 38%, 39%, 40%, 41%, 42%, 43%, 44%, 45%, 46%, 47%, 48%, 49% or 50%.

[0084] In some embodiments, the method for monitoring the effective etching of the cleaning reagent comprises the following steps:

[0085] (1) Prepare cleaning solutions with different water contents, which include triethanolamine, triethanolamine acetate, ammonium fluoride and water.

[0086] (2) using the cleaning solution to etch the TEOS product at the same etching temperature, taking the etching rate in the etching stable interval as the preset etching rate, the etching stable interval satisfying: the difference between the maximum value and the minimum value of the etching rate in the etching stable interval is less than 0.2 A / min, and the length of the etching stable interval is 100 s-200 s.

[0087] (3) detecting the etching rate of the cleaning solution with different water content on the surface of the TEOS product.

[0088] (4) establishing the curve of the etching rate changing with the water content of the cleaning solution.

[0089] Experimental Example 1

[0090] The TEOS film was etched by using the SYS9058 cleaning solution with a water content of 40%, 3 groups of repeated groups were set, and the etching rate of each cleaning solution on the TEOS film after cleaning for 60 s, 120 s, 180 s and 540 s was detected respectively, and the test results are shown in Tables 7 and Figure 9

[0091] Table 7

[0092]

[0093] It can be seen that in the early stage of the cleaning stage, i.e. in the time period before 180 s, the etching rate of the SYS9058 cleaning solution on the TEOS film is relatively fast, and the fluctuation between different repeated groups is large, which is due to the fact that the newly grown TEOS product (film) has a large number of silicon-oxygen bonds on the surface of the film layer, and the density of the film layer surface is low, which leads to the fact that the initial etching rate of the SYS9058 cleaning solution on the TEOS product is too fast. Therefore, the above-mentioned method for monitoring the effective etching of the cleaning agent is further improved, i.e. the TEOS product is etched by using the cleaning solution, and after a period of time, the etching rate is stable, i.e. the etching stable interval is reached, and then the etching rate of the cleaning solution on the TEOS product is detected, the difference between the maximum value and the minimum value of the etching rate in the etching stable interval is less than 0.2 A / min, and the etching rate of the SYS9058 cleaning solution with a certain water content on the TEOS product can be obtained with a small error and a high accurate value.

[0094] Experimental Example 2

[0095] The TEOS film was etched by using the SYS9058 cleaning solution with a water content of 35%-41%, and the average value of the etching rate of the cleaning solution with different water content on the TEOS film in the etching stable interval within 100 s was counted as the etching rate of the cleaning solution with the water content on the TEOS film, and the test results are shown in Table 8.​

[0096] Table 8

[0097]

[0098] It can be seen that when the water content of the SYS9058 cleaning solution is in the range of 36% to 40%, the etching rate of the SYS9058 cleaning solution on the TEOS film is less than 1 A / min, specifically 0.18 A / min to 0.81 A / min. When the water content of the SYS9058 cleaning solution is less than 35% or more than 41%, the etching rate of the SYS9058 cleaning solution on the TEOS film is significantly larger, and the amplitude of the increase is larger. It can be found that the etching rate of the SYS9058 cleaning solution on the TEOS film has a special corresponding relationship that the etching rate is smaller when the water content of the SYS9058 cleaning solution is in the range of 36% to 40%, and the etching rate of the SYS9058 cleaning solution on the TEOS film is significantly larger when the water content of the SYS9058 cleaning solution is less than 35% or more than 41%. According to the special corresponding relationship, the change curve of the etching rate with the water content of the cleaning solution can be established, the etching rate below 1 A / min is preset as the etching rate, and 36% to 40% is preset as the water content, so as to accurately determine the water content of the cleaning solution according to the etching rate.

[0099] In the above method for monitoring the effective etching of the cleaning agent, the cleaning solution with different water contents is used to etch the TEOS product, and the etching rate is detected to obtain the corresponding relationship between the etching rate of the cleaning solution with different water contents on the TEOS product and the water content thereof. The cleaning solution includes triethanolamine, triethanolamine acetate, ammonium fluoride and water. The cleaning solution has a significantly lower etching rate within the effective range of water content, and the etching rate is significantly improved outside the effective range of water content. According to the characteristics of the change of the etching rate of the cleaning solution on the TEOS product, within the effective range, the influence of the fluctuation of the etching rate caused by other errors on the determination of the water content of the etching solution can be reduced. The method for monitoring the effective etching of the cleaning agent can accurately and effectively monitor the etching rate and cleaning effect of the cleaning solution.

[0100] The technical features of the above-described embodiments can be combined in any manner. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described, but as long as the combinations of the technical features do not exist contradictions, they should be considered as the scope of the present disclosure.

[0101] The above embodiments only express several implementation manners of the present application, and the description is relatively specific and detailed, but it should not be understood as a limitation on the patent scope of the application. It should be pointed out that for ordinary skilled persons in the art, several modifications and improvements can be made without departing from the concept of the present application, which are all within the protection scope of the present application. Therefore, the protection scope of the patent of the present application should be subject to the appended claims, and the description and drawings can be used to explain the content of the claims.

Claims

1. A method of monitoring the effective etching of a cleaning agent, characterized by, The method comprises the following steps: configuring cleaning solutions with different water contents, the cleaning solutions comprising triethanolamine, triethanolamine acetate, ammonium fluoride and water; at the same etching temperature, contacting the cleaning solutions with different water contents with TEOS products to etch the surface of the TEOS products; detecting the etching rate of the cleaning solutions with different water contents on the surface of the TEOS products, comprising: using the cleaning solution to etch the TEOS product, taking the etching rate in the etching stable interval as the preset etching rate, the etching stable interval satisfying: the difference between the maximum and minimum values of the etching rate in the etching stable interval is less than 0.2 A / min, and the time length of the etching stable interval is 100s-200s; establishing the curve of the etching rate changing with the water content of the cleaning solution.

2. The method of claim 1, wherein the cleaning agent is effective to etch the material. After the curve of the etching rate changing with the water content of the cleaning solution is established, the method further comprises: taking the curve between the preset etching rate and the preset water content of the cleaning solution as the target curve.

3. The method of claim 2, wherein the cleaning agent is selected from the group consisting of: ammonia, hydrogen peroxide, sulfuric acid, hydrochloric acid, nitric acid, and combinations thereof. The preset etching rate is 0.1 A / min-1 A / min.

4. The method of claim 2, wherein the cleaning agent is selected from the group consisting of: ammonia, hydrogen peroxide, sulfuric acid, hydrochloric acid, nitric acid, and combinations thereof. The preset water content is 36%-40%.

5. The method of claim 1, wherein the cleaning agent is selected from the group consisting of: ammonia, hydrogen peroxide, sulfuric acid, hydrochloric acid, nitric acid, and combinations thereof. The time difference between the starting point of the etching stable interval and the starting point of the etching is 300s-500s.

6. The method of claim 1, wherein the cleaning agent is selected from the group consisting of: ammonia, hydrogen peroxide, sulfuric acid, hydrochloric acid, nitric acid, and combinations thereof. The preset etching rate is the average value of the etching rate in the etching stable interval.

7. The method of claim 1-6, wherein the cleaning agent is a photoresist developer. The etching temperature is 35℃-40℃.

8. The method of claim 1-6, wherein the cleaning agent is monitored to be effective to etch. The water content of the cleaning solution is 20%-60%.

9. The method of claim 1-6, wherein the cleaning agent is monitored to be effective to etch. The cleaning solution further comprises a chelate inhibitor.

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