A method for preparing silicon-coated copper, an anti-oxidation copper coated with silicon prepared by the method, and a semiconductor device using the same.

Abstract

This invention relates to a method for preparing silicon-coated copper, an anti-oxidation copper coated with silicon prepared by the method, and a semiconductor device using the same. More specifically, it relates to copper on a silicon (Si) coated surface, wherein silicon (Si) is vapor-deposited to form a silicon (Si)-oxygen (O)-copper (Cu) mixed layer protective film to maintain electrical properties and have anti-oxidation properties. The anti-oxidation copper coated with silicon according to the present invention is characterized by the vapor-deposit of silicon (Si) to form a silicon (Si)-oxygen (O) mixed layer. The present invention is characterized in that the aforementioned silicon-coated copper comprises: a copper layer (10); SiCuO x Layer (20) is formed by mixing silicon (Si)-oxygen (O)-copper (Cu) on the upper end of the copper layer (10); the first silicon (Si)-oxygen (O) mixed layer (30) is formed on the SiCuO layer. x The upper end of layer (20); a silicon layer (40) is formed on the upper end of the first silicon (Si)-oxygen (O) mixed layer (30); and a second silicon (Si)-oxygen (O) mixed layer (50) is formed on the upper end of the silicon (Si) layer (40). The method for preparing silicon-coated copper according to the present invention is characterized by depositing silicon (Si) by a single sputtering process.

Description

Technical Field

[0001] This invention relates to a method for preparing silicon-coated copper, silicon-coated anti-oxidation copper prepared by the same method, and a semiconductor device using the same. More specifically, it relates to a method for preparing silicon-coated copper.

[0002] The copper on the surface is deposited by vapor deposition of silicon (Si) to form a silicon (Si)-oxygen (O)-copper (Cu) mixed layer.

[0003] A protective film is used to maintain electrical properties and provide antioxidant protection. Background Technology

[0004] Copper is generally considered a valuable and widely used conductive material. This type of copper...

[0005] It is used as thin films, foils, or bulk structures. However, copper has weak resistance to oxidation, therefore, it is unsuitable for applications requiring extreme reliability, such as prolonged use or use at high temperatures.

[0006] Instead of copper, gold, which has a higher impedance and is more expensive, is used.

[0007] Therefore, in order to make more effective use of economically viable and physically superior copper, it is necessary to solve...

[0008] A technology to solve this oxidation problem. Summary of the Invention

[0009] Technical issues

[0010] This invention addresses the aforementioned problems, and its objective is to provide a method for preparing...

[0011] An oxidation-resistant Si-O-Cu protective layer is formed by vapor deposition of Si, which also provides oxidation resistance at high temperatures.

[0012] Methods for stabilizing copper thin films, foils, or bulk structures.

[0013] The technical problem to be solved by this invention is not limited to the problems mentioned above.

[0014] Those skilled in the art can clearly understand other techniques not mentioned from the following description.

[0015] Technical issues.

[0016] Technical solution

[0017] The present invention is a silicon-coated anti-oxidation copper, characterized in that a silicon (Si)-oxygen (O) and silicon (Si)-oxygen (O)-copper (Cu) mixed layer is formed by vapor deposition of silicon (Si).

[0018] Furthermore, the present invention is characterized in that the copper coated with the silicon (Si) has a resistance value between the copper and gold (Au) that are not coated with the silicon (Si).

[0019] Furthermore, a feature of the present invention is that the resistivity of the copper coated with the aforementioned silicon is 1.68 × 10⁻⁶. -6 Ω·cm to 2.2×10 -6 Ω·cm.

[0020] Furthermore, the present invention is characterized in that the copper coating on the silicon comprises: a copper layer 10; SiCuO x Layer 20 is formed by mixing silicon (Si)-oxygen (O)-copper (Cu) on the upper end of the copper layer 10; the first silicon (Si)-oxygen (O) mixed layer 30 is formed on the SiCuO layer. x The upper end of layer 20; a silicon (Si) layer 40, formed on the upper end of the first silicon (Si)-oxygen (O) mixed layer 30; and a second silicon (Si)-oxygen (O) mixed layer 50, formed on the upper end of the silicon (Si) layer 40.

[0021] Furthermore, the present invention is characterized in that the thickness of the silicon (Si) layer 40 is 3 nm to 20 nm.

[0022] Furthermore, the present invention is characterized in that the thickness of the first silicon (Si)-oxygen (O) mixed layer (30) and the second silicon (Si)-oxygen (O) mixed layer 50 is 1 nm to 10 nm.

[0023] Furthermore, the present invention is characterized in that the above-mentioned SiCuO x The thickness of layer 20 is 0.8 nm to 1.2 nm.

[0024] The present invention is a method for preparing silicon-coated copper, characterized in that silicon (Si) is deposited on copper (Cu) by a single sputtering process.

[0025] Furthermore, the present invention is characterized in that the above sputtering is performed under an argon atmosphere.

[0026] Furthermore, the present invention is characterized in that the sputtering is performed at a temperature of room temperature to 350°C for 1 to 5 minutes.

[0027] This invention relates to semiconductor devices, characterized in that they include SiCuO formed as a silicon-oxygen-copper mixed layer by silicon evaporation. x 20 layers of copper.

[0028] Furthermore, the present invention is characterized in that the above-mentioned SiCuO x The thickness of layer 20 is 0.8 nm to 1.2 nm.

[0029] The effects of the invention

[0030] Through the above technical solution, the present invention can improve the preparation efficiency by evaporating silicon (Si) to prepare copper that is not oxidized in an oxidizing environment. It can use copper (Cu) and silicon (Si), which are the most abundant resources in the world, to replace gold, and therefore has high economic value.

[0031] Furthermore, the present invention can prepare copper (Cu) by vapor deposition of silicon (Si) to form a silicon (Si)-oxygen (O)-copper (Cu) protective film to maintain electrical properties and have antioxidant properties.

[0032] Furthermore, the present invention can prepare the following antioxidant copper, the preparation method is extremely simple and inexpensive, and it can be used semi-permanently at room temperature.

[0033] Furthermore, the present invention can fabricate circuits that will not be oxidized even when heat is generated during pattern fabrication and surface treatment, thereby preventing fires and explosions caused by heat generation. Attached Figure Description

[0034] Figure 1 As a photograph of a single-crystal copper thin film, it shows an RGB value (R: 254, G: 220, B: 182) that is brighter than the known RGB values ​​of copper (R: 184, G: 115, B: 51).

[0035] Figure 2 This is a photograph of a single-crystal copper thin film of silicon (Si) after being coated with silicon (Si) and then heat-treated in air at 350°C for 30 minutes.

[0036] Figure 3 The results are obtained from X-ray diffraction (XRD) measurements of single-crystal copper thin films.

[0037] Figure 4 X-ray diffraction results of single-crystal copper films coated with silicon (Si) confirm that the crystal structure was not completely changed after heat treatment in air at 350°C for 30 minutes, with better crystallization in one direction and no surface oxidation.

[0038] Figure 5 A photograph of ordinary copper foil.

[0039] Figure 6 A photograph of a copper foil coated with silicon (Si) and subjected to surface treatment.

[0040] Figure 7 A photograph of a typical copper foil that has been heat-treated in air at 250°C for 30 minutes.

[0041] Figure 8This is a photograph of a copper foil that has been coated with silicon (Si) and surface-treated, and then heat-treated in air at 250°C for 30 minutes.

[0042] Figure 9 The results are X-ray diffraction measurements of a typical copper foil that has been heat-treated in air at 250°C for 30 minutes.

[0043] Figure 10 The results are obtained by X-ray diffraction of copper foil that has been coated with silicon (Si) and surface treated, and then heat-treated in air at 250°C for 30 minutes.

[0044] Figure 11 A graph showing the change in resistivity depending on the heat treatment temperature and silicon (Si) coating thickness of the SiCu / Al2O3 sample.

[0045] Figure 12 The results are obtained from the transmission electron microscope (TEM) cross-sectional measurements of the Si10Cu / Al2O3 sample.

[0046] Figure 13 To illustrate the results of the changes in interatomic distances of copper based on the Si10Cu / Al2O3 depth observed by high-resolution transmission electron microscopy.

[0047] Figure 14 The results are from X-ray photoelectron spectroscopy analysis of the surface of the Si10SCCF sample.

[0048] Figure 15 The results are from transmission electron microscopy compositional analysis of the Si10SCCF sample surface.

[0049] Figure 16 As a predicted distribution map of O and Si on a copper thin film, it is shown as a side view and a top view. Detailed Implementation

[0050] Briefly explain the terminology used in this invention, and then provide a detailed description of the invention.

[0051] The terminology used in this invention has been selected from general terms that take into account its function in this invention and are currently widely used as much as possible. However, this may be modified according to the intentions, conventions, and the emergence of new technologies of those skilled in the art to which this invention pertains. Therefore, the terminology used in this invention is not a simple term, but should be defined based on its meaning and the overall content of this invention.

[0052] Throughout the specification, when a section “includes” other structural elements, unless otherwise stated, it means that other structural elements may also be included, rather than excluding them.

[0053] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, so that those skilled in the art can easily implement the present invention. However, the present invention can be embodied in many different forms and is not limited to the embodiments described herein.

[0054] The specific details regarding the technical problems, technical solutions, and effects of this invention are described in the following embodiments and accompanying drawings. References and accompanying drawings are also provided. Figure 1 The advantages, features, and methods of implementing the present invention will become more apparent from the detailed embodiments described later.

[0055] The present invention will now be described in more detail with reference to the accompanying drawings.

[0056] This invention relates to a method for preparing silicon-coated copper, wherein a silicon (Si)-oxygen (O)-copper (Cu) mixed layer is formed by silicon vapor deposition.

[0057] More specifically, the silicon is deposited onto the copper surface by a single sputtering process. Preferably, the sputtering is performed under an argon atmosphere for 1 to 5 minutes at a temperature ranging from room temperature to 350°C. When performing the sputtering, crystallinity decreases due to the formation of grain boundaries and potentials when the temperature and execution time are above or below the specified range. Therefore, it is preferable to perform the sputtering within the aforementioned temperature range. In embodiments of the present invention, the sputtering is performed at a temperature of 190°C for 75 seconds, 150 seconds, and 300 seconds.

[0058] The silicon-coated copper prepared by the above-described method is characterized in that a SiCuO layer, which is a silicon (Si)-oxygen (O)-copper (Cu) mixed layer, is formed by silicon evaporation. x Layer 20.

[0059] The copper coated with silicon in this invention is characterized by having RGB values ​​of 250 to 260 (red), 210 to 220 (green), and 155 to 165 (blue). Figure 1 This is a photograph of a 185nm thick single crystal copper thin film (SCCF). Figure 2 This is a photograph of copper after being coated with silicon and heat-treated in air at 350°C for 30 minutes. When fabricated to the same size... Figure 1 The RGB values ​​of the single-crystal copper thin film are 254 (red), 220 (green), and 182 (blue). This invention... Figure 2After being coated with silicon, the RGB values ​​of copper subjected to heat treatment in air are 255 (red), 216 (green), and 159 (blue). Considering the known RGB values ​​of copper as 185 (red), 115 (green), and 51 (blue), the silicon-coated copper prepared by the present invention can prevent oxidation, maintaining a similar state to the aforementioned single-crystal copper film even after heat treatment at 350°C for 30 minutes, thus preventing oxidation.

[0060] Figures 5 to 8 Comparative photographs of copper foil and silicon-coated copper foil before and after heat treatment in air are shown. When heat-treated at 250°C... Figure 5 The copper foil was heat-treated for 30 minutes. Figure 7 When compared, it can be confirmed that ordinary copper foil darkens. On the other hand, Figure 6 In the same conditions, when silicon-coated copper foil is heat-treated at 250°C for 30 minutes... Figure 8 When compared, it can be confirmed that the copper foil coated with silicon retains its original color.

[0061] Figure 3 and Figure 4 The X-ray diffraction results of single-crystal through-film (SCCF) thin films and single-crystal copper thin films coated with silicon and then heat-treated are shown. Figure 4 As shown, it can be confirmed that after coating with silicon, the crystallization result was not changed at all after heat treatment at 350°C for 30 minutes in air. On the contrary, the crystallization in one direction was better, and the surface was not oxidized.

[0062] Figures 9 to 10 The X-ray diffraction results of copper foil after heat treatment in air and silicon-coated copper foil are shown. Figure 9 In this process, copper foil is heat-treated in air at 250°C for 30 minutes. Figure 10 When comparing, in Figure 9 The copper foil exhibits the Cu2O phase, such as Figure 10 As shown, the silicon-coated copper foil maintains the original copper structure.

[0063] And, as Figure 11 As shown, the copper coated with silicon in this invention is characterized by having a resistivity of 1.68 × 10⁻⁶ as bulk copper. -6 Ω·cm and 2.2 × 10⁻⁶ as the resistance value of bulk Au. -6 The resistance value between Ω·cm.

[0064] The resistance of the silicon-coated copper of the present invention is maintained similarly to that of the copper without silicon deposition.

[0065] The silicon-coated copper of the present invention will not oxidize even when heated at 200°C for 60 hours.

[0066] Figure 11 The resistivity variations depend on the heat treatment temperature and silicon coating thickness of the SiCu / Al2O3 samples. Zone A shows the resistivity variation based on heat treatment of a 185 nm thick single-crystal copper thin film (SCCF) sample. Zone B shows the resistivity variation of a silicon-coated single-crystal copper thin film (SCCF) sample (Si5SCCF) and its post-heat treatment. Zone C shows the resistivity variation of a single-crystal copper thin film (SCCF) sample with a silicon coating thickness greater than 5 nm. Zone D shows the resistivity of bulk copper (Cu) and bulk gold (Au) and compares it with Zones B and C.

[0067] In region A, the resistivity of the pure SCCF (pristine) sample is 1.68 × 10⁻⁶, which is the same as that of bulk copper. -6 The resistance is almost the same in Ω·cm, and less than the resistance of bulk Au (2.2 × 10⁻⁶). -6 The resistance value is measured in Ω·cm. However, in region A, when the single-crystal copper thin film (SCCF) sample is heat-treated at a temperature of 200 to 250 °C, a sharp increase in resistance can be observed. This indicates that the copper is oxidized and becomes Cu₂O.

[0068] On the other hand, in region B, even when a sample of silicon (Si5SCCF) coated with a 5nm silicon film on a 185nm single-crystal copper thin film (SCCF) is heat-treated for 30 minutes at a temperature of 400°C, the resistance value is almost similar to that of bulk copper.

[0069] Furthermore, region C allows us to confirm the change in resistance as the silicon layer thickness increases. Silicon-coated single-crystal copper films (SCCF) exhibit resistance values ​​intermediate between bulk copper and nugget, until the silicon thickness reaches 30 nm. Only at this thickness does the resistance become similar to that of nugget.

[0070] Copper coated with the aforementioned silicon can be fabricated into monocrystalline thin films, polycrystalline thin films, foils, or blocks. For example... Figure 11 As shown, when the copper coated with the silicon is a single-crystal thin film, it is protected from oxidation even when heated to 400°C for 30 minutes. When the copper coated with the silicon is a polycrystalline thin film, foil, or block, it is protected from oxidation even when heated to 300°C for 30 minutes.

[0071] like Figure 12 As shown, the silicon-coated copper prepared by the above-described method comprises: a copper layer 10; and SiCuO. xLayer 20 is formed by mixing silicon (Si)-oxygen (O)-copper (Cu) on the upper end of the copper layer 10; the first silicon (Si)-oxygen (O) mixed layer 30 is formed on the SiCuO layer. x The upper end of layer 20; a silicon (Si) layer 40, formed on the upper end of the first silicon (Si)-oxygen (O) mixed layer 30; and a second silicon (Si)-oxygen (O) mixed layer 50, formed on the upper end of the silicon (Si) layer 40.

[0072] Figure 12 The transmission electron microscope cross-sectional measurements of a sample with a 10 nm silicon (Si10Cu / Al2O3) coating on a single-crystal copper thin film show that the silicon coating in this invention is not simply a single layer, but rather a silicon (Si)-oxygen (O) mixed layer is formed on the upper end of the copper layer 10, and then a silicon (Si) layer and the aforementioned silicon (Si)-oxygen (O) mixed layer are formed again.

[0073] More specifically, the present invention is characterized in that the thickness of the first silicon (Si)-oxygen (O) mixed layer 30, the silicon (Si) layer 40, and the second silicon (Si)-oxygen (O) mixed layer 50, which are layers of silicon (Si) coated on copper, is from 5 nm to 30 nm. When the thickness of the silicon (Si) coating layer is less than 5 nm, it will be easily oxidized; when the thickness is greater than 30 nm, problems of reduced insulation or conductivity occur. Therefore, the above conditions are preferred.

[0074] The present invention is characterized in that the thickness of the silicon (Si) layer 40 is 3 nm to 20 nm.

[0075] The present invention is characterized in that the thickness of the first silicon (Si)-oxygen (O) mixed layer 30 and the second silicon (Si)-oxygen (O) mixed layer 50 is 1 nm to 10 nm.

[0076] The present invention is characterized in that the above-mentioned SiCuO x The thickness of layer 20 is 0.8 nm to 1.2 nm.

[0077] Figure 13 To illustrate the results of depth-based interatomic distance variations in copper observed using high-resolution transmission electron microscopy. For example... Figure 13 As shown, a decrease in the distance between copper (Cu) layers on the surface can be observed, confirming the presence of a mixed silicon (Si) and copper (Cu) layer on the surface. Figure 14 The presence of the silicon (Si) and copper (Cu) mixed layer can be confirmed again by X-ray photoelectron spectroscopy analysis.

[0078] Figure 14X-ray photoelectron spectroscopy (XPS) analysis results were used to confirm the compositional distribution on the surface of a 10 nm silicon-coated SCCF (Si10SCCF) sample. It was confirmed that the surface oxygen initially decreases slightly, increases again in the mixed layer, and then decreases again. In the silicon (Si) distribution, oxygen exhibits the highest distribution in the trench-forming regions. Furthermore, regions containing a mixed layer of oxygen, silicon, and copper play a decisive role in preventing oxidation. That is, it can be confirmed that a silicon (Si)-oxygen (O)-copper (Cu) mixed layer (SiCuO) is formed on the copper surface. x Layer 20), silicon (Si)-oxygen (O) mixed layer (SiO) X ) and silicon (Si) layer 40 morphology.

[0079] Figure 15 The surface morphology of silicon-coated copper can be more accurately confirmed, showing the surface structure of a SCCF (Si10SCCF) sample coated with 10 nm silicon (transmission electron microscopy). Figure 15 Part (b) shows the results of component analysis in transmission electron microscopy, such as... Figure 12 Transmission electron microscope and Figure 14 The X-ray photoelectron spectroscopy results show that, according to the silicon (Si)-oxygen (O) mixed layer (SiO), X ), silicon (Si) layer 40, silicon (Si)-oxygen (O) mixed layer SiO X ), Silicon (Si)-Oxygen (O)-Copper (Cu) mixed layer (SiCuO) x Layer 20) and copper (Cu) are sequentially formed on the surface of the thin film, forming a silicon (Si)-oxygen (O) mixed layer (SiO2). X It has an amorphous structure, therefore, in Figure 15 The image in part (a) is not shown. The silicon atoms directly above the copper film fix the oxygen atoms, which move freely on the copper surface, in optimal positions (sites). Normally, oxygen moves relatively freely on the flat surface of copper, but silicon fixes these oxygen atoms. The thickness of the silicon (Si) layer 40 does not play a significant role in oxidation prevention; the most important structure is determined by the atomic layer 1-2 directly above the copper film.

[0080] exist Figure 15 Part (b) contains a silicon (Si)-oxygen (O)-copper (Cu) mixed layer (SiCuO) formed by oxygen, silicon, and copper. x Layer 20), this mixed layer plays a decisive role in preventing oxidation.

[0081] Figure 16 The above-mentioned SiCuO on a copper thin film is shown. x The expected distribution of oxygen (O) and silicon (Si) in layer 20. Figure 16Part (a) is the formation of SiCuO on the copper thin film by the oxygen (O) and silicon (Si). x Side view of floor 20. Figure 16 Part (b) is a top view. The silicon (Si) described above combines with and is fixed to the oxygen (O) on the surface of the copper. In this case, the basic structure is as follows: Figure 16 Composition. For example... Figure 16 As shown in the side view of part (a) and the top view of part (b), when the oxygen (O) covers the copper surface and is fixed by silicon (Si), other oxygen (O) cannot enter the interior of the copper and is prevented from entering.

[0082] Furthermore, the present invention can manufacture semiconductor devices comprising silicon-coated copper prepared by the above-described method for preparing silicon-coated copper. The semiconductor device of the present invention is characterized by comprising copper formed by vapor deposition of silicon (Si) to form a silicon (Si)-oxygen (O)-copper (Cu) mixed layer. The semiconductor device described above comprises the same structure as the silicon-coated copper described above.

[0083] Specifically, the aforementioned semiconductor device is connected to the semiconductor chip pad and terminals and includes copper on its surface with a silicon (Si)-oxygen (O)-copper (Cu) mixed layer of the present invention formed to prevent oxidation. Therefore, compared to using gold, it has low resistance, robustness, and low cost, and its lifespan is increased even at high ambient temperatures, allowing for long-term use. Furthermore, it maintains the advantages offered by ordinary copper, improving electrical properties due to oxidation suppression and increasing strength.

[0084] More specifically, the first silicon (Si)-oxygen (O) mixed layer 30, the silicon (Si) layer 40, and the second silicon (Si)-oxygen (O) mixed layer 50 are silicon (Si) layers coated on copper, characterized by a thickness of 5 nm to 30 nm. When the thickness of the silicon (Si) layer is less than 5 nm, it will be easily oxidized and discarded; when it is greater than 30 nm, problems such as insulation or reduced conductivity will occur. Therefore, the above conditions are preferred.

[0085] Furthermore, the present invention is characterized in that, in the above-described semiconductor device, the SiCuO... x The thickness of layer 20 is 0.8 nm to 1.2 nm.

[0086] Through the above technical solution, the present invention can improve the preparation efficiency by evaporating silicon (Si) to prepare copper that is not oxidized in an oxidizing environment. It can use copper (Cu) and silicon (Si), which are the most abundant resources in the world, to replace gold, and therefore has high economic value.

[0087] Furthermore, the present invention can prepare copper (Cu) by vapor deposition of silicon (Si) to form a silicon (Si)-oxygen (O)-copper (Cu) protective film to maintain electrical properties and have antioxidant properties.

[0088] Furthermore, the present invention can prepare the following antioxidant copper, which corresponds to the substance with the longest duration at high temperature. The preparation method is extremely simple and inexpensive, and it can be used semi-permanently at room temperature.

[0089] Furthermore, the present invention can fabricate circuits that will not be oxidized even when heat is generated during pattern fabrication and surface treatment, thereby preventing fires and explosions caused by heat generation and significantly increasing current density, thus having a great impact on semiconductor processes.

[0090] As described above, those skilled in the art will understand that the technical structure of the present invention can be implemented in other specific forms without departing from the technical concept or essential features of the present invention.

[0091] Therefore, the embodiments described above are illustrative in all respects and are not intended to limit the invention. The scope of the invention is presented by the scope of the claims described below, and not by the detailed description above. All modifications or variations derived from the meaning, scope and equivalent concepts of the scope of the claims are within the scope of the invention.

[0092] Explanation of reference numerals in the attached figures

[0093] 10. Copper layer

[0094] 20. SiCuO x layer

[0095] 30. First silicon (Si)-oxygen (O) hybrid layer

[0096] 40. Silicon (Si) layer

[0097] 50. Second silicon (Si)-oxygen (O) mixed layer

Claims

1. A silicon-coated, copper-oxide-resistant copper characterized by, The copper coated with the silicon includes: a copper layer (10); SiCuO x a layer (20) of silicon-oxygen-copper mixed at the upper end of the copper layer (10); A first silicon-oxygen mixed layer (30) is formed on the above-mentioned SiCuO. x The upper end of layer (20); a silicon layer (40) formed on an upper end of the first silicon-oxygen mixed layer (30); and a second silicon-oxygen mixed layer (50) formed on an upper end of the silicon layer (40), wherein the silicon-oxygen-copper mixed layer SiCuO is formed by sputtering a single process to evaporate silicon on the surface of copper under an argon atmosphere x layer (20).

2. The silicon-coated, copper-oxide preventing material according to claim 1, wherein The copper coated with the silicon has an electrical resistance between the copper to which the silicon is not evaporated and gold.

3. The silicon-coated, tarnish-resistant copper of claim 1, wherein, The copper coated with the silicon is a single crystal thin film, a polycrystal thin film, a foil, or a block.

4. The silicon-coated, tarnish-resistant copper of claim 3, wherein, When the copper coated with the silicon is a single crystal thin film, oxidation is prevented even if heat is applied for 30 minutes at a temperature of 400°C.

5. The silicon-coated, tarnish-resistant copper of claim 3, wherein, When the copper coated with the silicon is a polycrystal thin film, a foil, or a block, oxidation is prevented even if heat is applied at a temperature of 300°C.

6. The silicon-coated, tarnish-resistant copper of claim 1, wherein, The copper coated with the silicon prevents oxidation even if heat is applied for 60 hours at a temperature of 200°C.

7. The silicon-coated, tarnish-resistant copper of claim 1, wherein, The resistance of the copper coated with the above silicon was 1.68 x 10 -6 Ω•cm to 2.2 x 10 -6 Ω•cm.

8. The silicon-coated, tarnish-resistant copper of claim 1, wherein, The thickness of the first silicon-oxygen mixed layer (30), the silicon layer (40), and the second silicon-oxygen mixed layer (50) is 5 nm to 30 nm.

9. The silicon-coated, tarnish-resistant copper of claim 1, wherein, The thickness of the first silicon-oxygen mixed layer (30) and the second silicon-oxygen mixed layer (50) is 1 nm to 10 nm.

10. The silicon-coated, tarnish-resistant copper of claim 1, wherein, The above SiCuO x The thickness of the layer (20) is 0.8 nm to 1.2 nm.

11. A process for the production of the silicon-coated, copper-oxide- resistant material as claimed in claim 1, characterized in that The silicon is evaporated on the copper by a single sputtering process, wherein the sputtering is performed in an argon atmosphere, and the sputtering is performed at a temperature of normal temperature to 350°C for 1 minute to 5 minutes.

12. A semiconductor device, characterized by comprising: A SiCuO as a silicon-oxygen-copper mixed layer according to claim 1 formed by sputtering silicon in a single process under an argon atmosphere x Copper oxide resistant layer (20).

13. The semiconductor device according to claim 12, wherein The above SiCuO x The thickness of the layer (20) is 0.8 nm to 1.2 nm.

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