semiconductor laser

Abstract

The application provides a semiconductor laser. The semiconductor laser comprises a shell and a light-emitting unit, a shaping unit, a beam combining unit, a coupling unit and an output optical fiber arranged in the shell, wherein the light-emitting unit comprises a plurality of semiconductor laser single tubes arranged in a straight line, and the plurality of semiconductor laser single tubes are divided into semiconductor laser single tubes with different strip widths, the strip width of the semiconductor laser single tubes at both ends of the plurality of semiconductor laser single tubes arranged in a straight line is smaller than that of the semiconductor laser single tubes in the middle, and the laser emitted by the light-emitting unit is coupled into the output optical fiber after sequentially passing through the shaping unit, the beam combining unit and the coupling unit, so that the light spot output by the output optical fiber is composed of multiple sizes. The application solves the problem that the high output power, the high power density and the high light spot brightness of the semiconductor laser in the prior art are difficult to be simultaneously considered.

Description

Technical Field

[0001] This invention relates to the field of semiconductor equipment technology, and more specifically, to a semiconductor laser. Background Technology

[0002] Semiconductor lasers are characterized by their small size, light weight, long lifespan, low power consumption, and wide wavelength coverage, making them widely used in laser displays, materials processing, laser communication, laser medicine, and 3D printing. With increasing market demand, the requirements for semiconductor laser output power and fiber optic output spot brightness are becoming increasingly stringent. To meet these demands, conventional methods include increasing the number of semiconductor laser tubes and increasing the output power of individual semiconductor laser tubes.

[0003] A current semiconductor laser comprises multiple semiconductor laser tubes. The laser light emitted from these tubes is shaped into a rectangular spot, which is then coupled into an optical fiber via a coupling lens. During coupling, a certain NA (nanoscale) ratio must be maintained. If this ratio is exceeded, the spot cannot be fully coupled into the fiber, leading to leakage, high fiber temperature, and potentially even fiber burnout. The larger the stripe width of the semiconductor laser tube, the wider the resulting spot. Therefore, the number of semiconductor laser tube spots that can be accommodated in an optical fiber of a given diameter is limited. Current solutions typically increase the number of semiconductor laser tubes with the same stripe width, which necessitates increasing the fiber diameter; otherwise, the spot cannot be fully coupled into the fiber. Even if increasing the fiber diameter achieves full coupling and increases the laser's output power, the power density inside the fiber decreases, resulting in a corresponding decrease in the brightness of the output spot.

[0004] Meanwhile, the current photoelectric conversion efficiency of semiconductor laser diodes is around 50-60%, with the remaining electrical energy being converted into heat energy and conducted to the cooling equipment through the semiconductor laser housing. Increasing the output power of a single semiconductor laser diode will correspondingly improve the heat dissipation capacity of the semiconductor laser housing. However, the heat dissipation capacity of the semiconductor laser housing has its limits, and once these limits are reached, the overall performance of the semiconductor laser diode will be affected.

[0005] In other words, existing semiconductor lasers suffer from the problem of simultaneously achieving high output power, high power density, and high spot brightness. Summary of the Invention

[0006] The main objective of this invention is to provide a semiconductor laser to solve the problem that existing semiconductor lasers cannot simultaneously achieve high output power, high power density, and high spot brightness.

[0007] To achieve the above objectives, the present invention provides a semiconductor laser, comprising a housing and a light-emitting unit, a shaping unit, a beam-combining unit, a coupling unit, and an output optical fiber disposed within the housing. The light-emitting unit comprises a plurality of semiconductor laser tubes arranged in a straight line, and the plurality of semiconductor laser tubes are divided into semiconductor laser tubes with different strip widths. Among the plurality of semiconductor laser tubes arranged in a straight line, the strip width of the semiconductor laser tubes located at both ends is smaller than the strip width of the semiconductor laser tube located in the middle. The laser emitted by the light-emitting unit passes sequentially through the shaping unit, the beam-combining unit, and the coupling unit before being coupled into the output optical fiber, so that the light spot output by the output optical fiber is composed of multiple sizes.

[0008] Furthermore, the stripe width of various semiconductor laser tubes gradually decreases from the middle to the outer edge.

[0009] Furthermore, the light-emitting units are one or more groups. When there are multiple groups of light-emitting units, the multiple groups of light-emitting units may be the same or different. At least two groups of light-emitting units are located on the same side of the housing and have the same light emission direction, or at least two groups of light-emitting units are located on opposite sides of a set of housings and have opposite light emission directions.

[0010] Furthermore, there are multiple sets of light-emitting units, including a first light-emitting unit and a second light-emitting unit. The number of stripe width types of the multiple semiconductor laser tubes in the first light-emitting unit is equal to or different from the number of stripe width types of the multiple semiconductor laser tubes in the second light-emitting unit.

[0011] Furthermore, the number of semiconductor laser tubes in the first light-emitting unit may be equal to or different from the number of semiconductor laser tubes in the second light-emitting unit.

[0012] Furthermore, the first light-emitting unit and the second light-emitting unit are spaced apart and arranged on the same side of the housing and have the same light emission direction. The first light-emitting unit and the second light-emitting unit are the same. The first light-emitting unit includes multiple semiconductor laser tubes with two different strip widths, namely multiple first laser tubes and multiple second laser tubes. The strip width of each first laser tube is smaller than the strip width of each second laser tube. The first laser tubes are arranged on both sides of the multiple second laser tubes.

[0013] Furthermore, the shaping unit includes multiple shaping units, each including at least a first shaping unit and a second shaping unit. The first shaping unit is located on the light-emitting side of the first light-emitting unit, the second shaping unit is located on the light-emitting side of the second light-emitting unit, and the beam-combining unit is located between the first shaping unit and the second shaping unit to combine the laser light from the first light-emitting unit via the first shaping unit and the laser light from the second light-emitting unit via the second shaping unit. The output optical fiber is located on the side of the coupling unit away from the beam-combining unit.

[0014] Furthermore, the housing is divided into a first region and a second region. The first light-emitting unit and the second light-emitting unit are disposed in the first region, and the first shaping unit, the second shaping unit, the beam combining unit, the coupling unit, and at least a portion of the output optical fiber are disposed in the second region. The first shaping unit includes a first collimating mirror and a first reflecting mirror disposed along the optical path transmission direction. The second shaping unit includes a second collimating mirror and a second reflecting mirror disposed along the optical path transmission direction. The beam combining unit includes at least a beam combining mirror, a prism, and an anti-reflection plate. The anti-reflection plate is located between the coupling unit and the prism. The second collimating mirror and the second reflecting mirror are located on the side of the prism away from the anti-reflection plate, and the second reflecting mirror corresponds to the prism. The beam combining mirror is located on the side of the prism facing the first light-emitting unit and the second light-emitting unit, and the first reflecting mirror corresponds to the beam combining mirror.

[0015] Furthermore, the first light-emitting unit and the second light-emitting unit are respectively located on a set of opposite sides of the housing and have opposite light emission directions. The first light-emitting unit is the same as the second light-emitting unit. The first light-emitting unit includes multiple semiconductor laser tubes with three different strip widths, namely multiple first laser tubes, multiple second laser tubes, and multiple third laser tubes. The strip width of the first laser tubes gradually decreases from the strip width of the third laser tubes. At least one second laser tube is provided on each side of the multiple first laser tubes. At least one third laser tube is provided on each side of the second laser tubes located on the sides of the multiple first laser tubes that are far apart from each other.

[0016] Furthermore, the shaping unit includes multiple shaping units, each including at least a first shaping unit and a second shaping unit. The housing has an upright plate placed at the bottom of the housing, located between the first light-emitting unit and the second light-emitting unit. The first shaping unit and the second shaping unit are respectively located on both sides of the upright plate, so that the upright plate separates the first shaping unit and the second shaping unit, while making the first shaping unit correspond to the first light-emitting unit and the second shaping unit correspond to the second light-emitting unit. The beam combining unit is located on the light-emitting side of the first shaping unit and the second shaping unit, and the coupling unit and the output optical fiber are sequentially arranged on the light-emitting side of the beam combining unit.

[0017] Furthermore, the coupling unit is a single focusing lens, or a combination of a fast-axis focusing lens and a slow-axis focusing lens.

[0018] According to the technical solution of the present invention, a semiconductor laser includes a housing and a light-emitting unit, a shaping unit, a beam-combining unit, a coupling unit, and an output optical fiber disposed in the housing. The light-emitting unit includes a plurality of semiconductor laser tubes arranged in a straight line, and the plurality of semiconductor laser tubes are divided into semiconductor laser tubes with different strip widths. Among the plurality of semiconductor laser tubes arranged in a straight line, the strip width of the semiconductor laser tubes located at both ends is smaller than the strip width of the semiconductor laser tube located in the middle. The laser emitted by the light-emitting unit passes through the shaping unit, the beam-combining unit, and the coupling unit in sequence and is then coupled into the output optical fiber, so that the light spot output by the output optical fiber is composed of multiple sizes.

[0019] By designing a housing, the housing provides mounting positions for the light-emitting unit, shaping unit, beam combining unit, coupling unit, and output fiber, improving the assembly stability of the devices within the housing and simultaneously providing a sealing function. This application employs semiconductor laser tubes of various widths. By setting the width of the semiconductor laser tubes at both ends of a linearly arranged array to be smaller than that of the one in the middle, the proportion of the light spot entering the output fiber is increased. This allows the light spot from the smaller-width semiconductor laser tubes to pass through the outer periphery of the output fiber's cross-section, enabling the light spot emitted by the light-emitting unit to be shaped and coupled into the output fiber without increasing the output fiber diameter or maintaining the NA (nano) ratio. Meanwhile, the light-emitting unit of this application is composed of semiconductor laser tubes with various stripe widths, and the stripe width of the semiconductor laser tubes at both ends is smaller than that of the semiconductor laser tube in the middle. In this way, even after the maximum number of semiconductor laser tubes with the largest stripe width that can be accommodated in the output fiber has been reached, the number of semiconductor laser tubes with smaller stripe widths can still be increased. This increases the output power of the semiconductor laser without changing the diameter of the output fiber, improves the power density inside the output fiber, and improves the brightness of the output spot. It also eliminates the need to improve the heat dissipation capacity of the semiconductor laser housing, thus ensuring the performance stability of the semiconductor laser tubes and the semiconductor laser itself. Attached Figure Description

[0020] The accompanying drawings, which form part of this application, are used to provide a further understanding of the invention. The illustrative embodiments of the invention and their descriptions are used to explain the invention and do not constitute an undue limitation of the invention. In the drawings:

[0021] Figure 1 A schematic diagram of the semiconductor laser according to Embodiment 1 of the present invention is shown;

[0022] Figure 2 It shows Figure 1 A schematic diagram of a semiconductor laser from another angle;

[0023] Figure 3A schematic diagram of the light spot output by the semiconductor laser in Embodiment 1 is shown in the output optical fiber;

[0024] Figure 4 A schematic diagram of the semiconductor laser according to Embodiment 2 of the present invention is shown;

[0025] Figure 5 It shows Figure 4 A schematic diagram of a semiconductor laser from another angle;

[0026] Figure 6 A schematic diagram of the light spot output by the semiconductor laser in Embodiment 2 is shown in the output optical fiber;

[0027] Figure 7 A schematic diagram of the light spot output by the semiconductor laser in Embodiment 3 is shown in the output optical fiber.

[0028] The above figures include the following reference numerals:

[0029] 10. Housing; 11. First region; 12. Second region; 13. Stepped structure; 14. Vertical plate; 21. First light-emitting unit; 22. Second light-emitting unit; 23. Semiconductor laser tube; 24. First laser tube; 25. Second laser tube; 26. Third laser tube; 31. First shaping unit; 311. First collimating lens; 312. First reflecting mirror; 32. Second shaping unit; 321. Second collimating lens; 322. Second reflecting mirror; 40. Beam combining unit; 41. Beam combining mirror; 42. Prism; 43. Anti-reflection sheet; 50. Coupling unit; 60. Output optical fiber; 71. First light spot; 72. Second light spot; 73. Third light spot; 74. Fourth light spot; 75. Fifth light spot. Detailed Implementation

[0030] It should be noted that, unless otherwise specified, the embodiments and features described in this application can be combined with each other. The present invention will now be described in detail with reference to the accompanying drawings and embodiments.

[0031] It should be noted that, unless otherwise specified, all technical and scientific terms used in this application have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains.

[0032] In this invention, unless otherwise stated, directional terms such as "upper," "lower," "top," and "bottom" are generally used in relation to the direction shown in the accompanying drawings, or in relation to the vertical, perpendicular, or gravitational direction of the component itself; similarly, for ease of understanding and description, "inner" and "outer" refer to the inner and outer contours of each component itself, but the above directional terms are not intended to limit this invention.

[0033] In order to solve the problem that existing semiconductor lasers cannot simultaneously achieve high output power, high power density and high spot brightness, the main objective of this invention is to provide a semiconductor laser.

[0034] like Figures 1 to 7 As shown, the semiconductor laser includes a housing 10 and a light-emitting unit, a shaping unit, a beam combining unit 40, a coupling unit 50, and an output fiber 60 disposed in the housing 10. The light-emitting unit includes a plurality of semiconductor laser tubes 23 arranged in a straight line, and the plurality of semiconductor laser tubes 23 are divided into semiconductor laser tubes 23 with different strip widths. The strip width of the semiconductor laser tubes 23 located at both ends of the plurality of semiconductor laser tubes 23 arranged in a straight line is smaller than the strip width of the semiconductor laser tube 23 located in the middle. The laser emitted by the light-emitting unit passes through the shaping unit, the beam combining unit 40, and the coupling unit 50 in sequence and is then coupled into the output fiber 60, so that the light spot output by the output fiber 60 is composed of multiple sizes.

[0035] By providing a housing 10, the housing 10 provides mounting positions for the light-emitting unit, shaping unit, beam combining unit 40, coupling unit 50, and output fiber 60, thereby improving the assembly stability of the devices within the housing 10 and also serving a sealing function. This application employs semiconductor laser tubes 23 with various strip widths. By setting the strip width of the semiconductor laser tubes 23 located at both ends of the linearly arranged array to be smaller than that of the middle semiconductor laser tube 23, the proportion of the light spot entering the output fiber 60 is increased. This allows the outer periphery of the radial cross-section of the output fiber 60 to be shaped and coupled into the output fiber 60 without increasing the diameter of the output fiber 60 or maintaining the NA ratio. Meanwhile, the light-emitting unit of this application is composed of semiconductor laser tubes 23 with various stripe widths, and the stripe width of the semiconductor laser tubes 23 at both ends is smaller than that of the semiconductor laser tube 23 in the middle. In this way, even after the maximum number of light spots of the semiconductor laser tubes 23 with the largest stripe width that can be accommodated in the output fiber 60 has reached its limit, the light spots of semiconductor laser tubes 23 with smaller stripe widths can still be added. In this way, without changing the diameter of the output fiber 60, the output power of the semiconductor laser is increased, the power density inside the output fiber 60 is improved, and the brightness of the light spot output by the output fiber 60 is improved. It is also not necessary to improve the heat dissipation capacity of the semiconductor laser housing 10, thus ensuring the performance stability of the semiconductor laser tubes 23 and the semiconductor laser.

[0036] It should be noted that the above-mentioned light-emitting unit includes various semiconductor laser tubes 23. The same type of semiconductor laser tube 23 has the same stripe width, while different types of semiconductor laser tubes 23 have different stripe widths. This arrangement allows for a variety of small light spots with different widths within the large light spot output by the output fiber 60.

[0037] Specifically, the semiconductor laser tube 23 has at least two different stripe widths, and the stripe widths of the various semiconductor laser tubes 23 gradually decrease from the center to the outer edges. In other words, the stripe widths of different types of semiconductor laser tubes 23 gradually decrease from the center to both ends. For example, when multiple semiconductor laser tubes 23 are divided into three types with different stripe widths—namely, the first type, the second type, and the third type—the stripe width of the first type is greater than that of the second type, which is greater than that of the first type. The first type of semiconductor laser tube 23 is the most numerous and located in the middle. The second and third types of semiconductor laser tubes 23 are sequentially arranged at both ends of the multiple first type semiconductor laser tubes 23, moving away from the center. Alternatively, it can be understood that the middle part of the light-emitting unit consists of multiple semiconductor laser tubes 23 of the same type and with the largest stripe width, while the stripe widths of the semiconductor laser tubes 23 closer to the ends decrease. This configuration increases the beam ratio of the radial cross section of the output fiber 60 without increasing the diameter of the output fiber 60, the number of the same semiconductor laser tubes 23, or the NA ratio, while maintaining the NA ratio. Even after the maximum beam width of the semiconductor laser tubes 23 that can be accommodated in the output fiber 60 reaches its limit, it is still possible to add beams of semiconductor laser tubes 23 with smaller beam widths, thereby improving the output power of the semiconductor laser, the power density inside the output fiber 60, and the brightness of the output beam.

[0038] Specifically, there may be one or more sets of light-emitting units. When there are multiple sets of light-emitting units, the sets may be identical or different. At least two sets of light-emitting units are located on the same side of the housing 10 and emit light in the same direction, or at least two sets of light-emitting units are located on opposite sides of a set of housing 10 and emit light in opposite directions. When there are multiple sets of light-emitting units, each set includes a first light-emitting unit 21 and a second light-emitting unit 22. Both the first light-emitting unit 21 and the second light-emitting unit 22 include multiple semiconductor laser tubes 23.

[0039] In an optional embodiment of this application, the number of stripe width types of the plurality of semiconductor laser tubes 23 in the first light-emitting unit 21 is equal to the number of stripe width types of the plurality of semiconductor laser tubes 23 in the second light-emitting unit 22. For example, when the first light-emitting unit 21 includes semiconductor laser tubes 23 with three stripe widths, the second light-emitting unit 22 also includes semiconductor laser tubes 23 with three stripe widths; or the number of stripe width types of the plurality of semiconductor laser tubes 23 in the first light-emitting unit 21 is not equal to the number of stripe width types of the plurality of semiconductor laser tubes 23 in the second light-emitting unit 22.

[0040] In an optional embodiment of this application, the number of semiconductor laser tubes 23 in the first light-emitting unit 21 is equal to the number of semiconductor laser tubes 23 in the second light-emitting unit 22, or the number of semiconductor laser tubes 23 in the first light-emitting unit 21 is not equal to the number of semiconductor laser tubes 23 in the second light-emitting unit 22.

[0041] In summary, the combination of the first light-emitting unit 21 and the second light-emitting unit 22 can be any of the following:

[0042] The total number of semiconductor laser single tubes is equal, and the number of stripe width types is equal;

[0043] The total number of semiconductor laser single tubes is equal, but the number of stripe width types is not equal;

[0044] The total number of semiconductor laser single tubes is not equal, but the number of stripe width types is equal;

[0045] The total number of semiconductor laser single tubes 23 is not equal, and the number of stripe width types is not equal.

[0046] Example 1

[0047] like Figures 1 to 3 As shown, a semiconductor laser of Embodiment 1 is described.

[0048] like Figure 1 and Figure 2 As shown, the first light-emitting unit 21 and the second light-emitting unit 22 are spaced apart and staggered on the same side of the housing 10 and have the same light emission direction. The straight line where the light emission point of the first light-emitting unit 21 is located is parallel to and does not coincide with the straight line where the light emission point of the second light-emitting unit 22 is located. The arrangement direction of the multiple semiconductor laser tubes 23 of the first light-emitting unit 21 is the same as the arrangement direction of the multiple semiconductor laser tubes 23 of the second light-emitting unit 22. The first light-emitting unit 21 and the second light-emitting unit 22 are the same, that is, the total number of semiconductor laser tubes 23 of the first light-emitting unit 21 and the second light-emitting unit 22 are equal, and the number of strip width types is also equal.

[0049] Specifically, both the first light-emitting unit 21 and the second light-emitting unit 22 include six semiconductor laser tubes 23. The first light-emitting unit 21 includes multiple semiconductor laser tubes 23 with two different strip widths, namely multiple first laser tubes 24 and multiple second laser tubes 25. The strip width of each first laser tube 24 is smaller than the strip width of each second laser tube 25. The first laser tubes 24 are arranged on both sides of the multiple second laser tubes 25. The number of first laser tubes 24 in the first light-emitting unit 21 is two, and the number of second laser tubes 25 is four. The four second laser tubes 25 are located in the middle, and there is a first laser tube 24 at each end of the four second laser tubes 25.

[0050] Similarly, the second light-emitting unit 22 includes multiple semiconductor laser tubes 23 with two different strip widths, namely multiple first laser tubes 24 and multiple second laser tubes 25. The strip width of each first laser tube 24 is smaller than the strip width of each second laser tube 25. The first laser tubes 24 are arranged on both sides of the multiple second laser tubes 25. The number of first laser tubes 24 in the second light-emitting unit 22 is two, and the number of second laser tubes 25 is four. The four second laser tubes 25 are located in the middle, and there is a first laser tube 24 at each end of the four second laser tubes 25.

[0051] In summary, as Figure 3 The figure shows a schematic diagram of the light spot output by the semiconductor laser in Embodiment 1 within the output fiber 60, with a radial cross-sectional view shown. As illustrated, the light spot output by the semiconductor laser includes two sizes: a first light spot 71 and a second light spot 72. There are two first light spots 71 and four second light spots 72. The size of the second light spots 72 is larger than that of the first light spots 71. Both the first light spots 71 and the second light spots 72 are elongated rectangles. The four identical second light spots 72 located in the middle of the figure represent the light spots of four second laser tubes 25, while the two smaller first light spots 71 on the upper and lower sides of the four second light spots 72 represent the light spots of two first laser tubes 24.

[0052] like Figure 1 and Figure 2 As shown, the shaping unit includes multiple shaping units, each including at least a first shaping unit 31 and a second shaping unit 32. The first shaping unit 31 is located on the light-emitting side of the first light-emitting unit 21, and the second shaping unit 32 is located on the light-emitting side of the second light-emitting unit 22. The beam-combining unit 40 is located between the first shaping unit 31 and the second shaping unit 32 to combine the laser light from the first light-emitting unit 21 via the first shaping unit 31 and the laser light from the second light-emitting unit 22 via the second shaping unit 32. The output optical fiber 60 is inserted into the side of the housing 10 and is located on the side of the coupling unit 50 away from the beam-combining unit 40.

[0053] Specifically, the housing 10 has a stepped structure 13 to divide the housing 10 into a first region 11 and a second region 12. The height of the first region 11 is greater than the height of the second region 12. The first light-emitting unit 21 and the second light-emitting unit 22 are disposed in the first region 11. The first shaping unit 31, the second shaping unit 32, the beam combining unit 40, the coupling unit 50 and at least part of the output optical fiber 60 are disposed in the second region 12. The first region 11 has a stepped structure corresponding to the positions of the first light-emitting unit 21 and the second light-emitting unit 22, so that the height of the plurality of semiconductor laser tubes 23 in the first light-emitting unit 21 gradually increases from the middle to both ends, and the height of the plurality of semiconductor laser tubes 23 in the second light-emitting unit 22 gradually increases from the middle to both ends.

[0054] like Figure 1 and Figure 2 As shown, the first shaping unit 31 is located on the light-emitting side of the first light-emitting unit 21. The first shaping unit 31 includes a first collimating mirror 311 and a first reflecting mirror 312 arranged along the optical path transmission direction. There are multiple first collimating mirrors 311 and first reflecting mirrors 312. The multiple first collimating mirrors 311 correspond one-to-one with the multiple semiconductor laser tubes 23 of the first light-emitting unit 21, and the multiple first reflecting mirrors 312 correspond one-to-one with the multiple first collimating mirrors 311. The second shaping unit 32 is located on the light-emitting side of the second light-emitting unit 22. The second shaping unit 32 includes a second collimating mirror 321 and a second reflecting mirror 322 arranged along the optical path transmission direction. There are multiple second collimating mirrors 321 and second reflecting mirrors 322. The multiple second collimating mirrors 321 correspond one-to-one with the multiple semiconductor laser tubes 23 of the second light-emitting unit 22, and the multiple second reflecting mirrors 322 correspond one-to-one with the multiple second collimating mirrors 321. The beam combining unit 40 includes at least a beam combining mirror 41, a prism 42, and an anti-reflective film 43. The anti-reflective film 43 is located between the coupling unit 50 and the prism 42. Of course, an optical lens can also be added between the prism 42 and the anti-reflective film 43 to increase the light transmittance. The second collimating mirror 321 and the second reflecting mirror 322 are located on the side of the prism 42 away from the anti-reflective film 43, and the second reflecting mirror 322 corresponds to the prism 42. The beam combining mirror 41 is located on the side of the prism 42 facing the first light-emitting unit 21 and the second light-emitting unit 22. The first reflecting mirror 312 corresponds to the beam combining mirror 41, and the first reflecting mirror 312 and the second collimating mirror 321 are located on both sides of the beam combining mirror 41.

[0055] In summary, the laser emitted from the first light-emitting unit 21 is collimated by the first collimating mirror 311, reflected by the first reflecting mirror 312, and reflected by the beam-combining mirror 41 before entering the prism 42. The laser emitted from the second light-emitting unit 22 is collimated by the second collimating mirror 321 and reflected by the second reflecting mirror 322 before entering the prism 42. The lasers from the first and second light-emitting units 21 are combined in the prism 42, and then the combined laser exits the prism 42 and passes through the anti-reflective plate 43 and the coupling unit 50 before being coupled into the output optical fiber 60. The shaping unit shapes the laser emitted by the light-emitting units into a rectangular spot, the beam-combining unit 40 combines the spots of the two light-emitting units into a single spot, and the coupling unit 50 couples the spot into the output optical fiber 60.

[0056] In this embodiment, the first collimating lens 311 and the second collimating lens 321 are both slow-axis collimating lenses, and the coupling unit 50 is a single-focusing lens.

[0057] Example 2

[0058] like Figures 4 to 6 As shown, a semiconductor laser of Embodiment 2 is described.

[0059] like Figure 4 and Figure 5 As shown, the first light-emitting unit 21 and the second light-emitting unit 22 are placed opposite each other. The first light-emitting unit 21 and the second light-emitting unit 22 are located on a set of opposite sides of the housing 10 and have opposite light emission directions. The first light-emitting unit 21 and the second light-emitting unit 22 are the same. The first light-emitting unit 21 includes multiple semiconductor laser tubes 23 with three different strip widths, namely multiple first laser tubes 24, multiple second laser tubes 25 and multiple third laser tubes 26. The strip width of the first laser tubes 24 gradually decreases to the strip width of the third laser tubes 26. At least one second laser tube 25 is provided on each side of the multiple first laser tubes 24. At least one third laser tube 26 is provided on each side of the second laser tubes 25 located on the sides of the multiple first laser tubes 24 that are far away from each other.

[0060] Similarly, the second light-emitting unit 22 includes multiple semiconductor laser tubes 23 with three different strip widths, namely multiple first laser tubes 24, multiple second laser tubes 25, and multiple third laser tubes 26. The strip width of the first laser tubes 24 gradually decreases to the strip width of the third laser tubes 26. At least one second laser tube 25 is provided on each side of the multiple first laser tubes 24, and at least one third laser tube 26 is provided on each side of the second laser tubes 25 located on the sides of the multiple first laser tubes 24 that are far apart from each other.

[0061] In this embodiment, the first light-emitting unit 21 includes ten semiconductor laser tubes 23, which are divided into six first laser tubes 24, two second laser tubes 25, and two third laser tubes 26. The six first laser tubes 24 form a group, with one second laser tube 25 on each side of the group, and two third laser tubes 26 on each side of the two second laser tubes 25 that are far apart from each other. The second light-emitting unit 22 includes ten semiconductor laser tubes 23, which are divided into six first laser tubes 24, two second laser tubes 25, and two third laser tubes 26. The six first laser tubes 24 form a group, with one second laser tube 25 on each side of the group, and two third laser tubes 26 on each side of the two second laser tubes 25 that are far apart from each other.

[0062] like Figure 6 The figure shows a schematic diagram of the light spot output by the semiconductor laser in Embodiment 2 within the output fiber 60, with a radial cross-sectional view shown. As shown, the light spot output by the semiconductor laser includes three sizes: a first spot 71, a second spot 72, and a third spot 73. There are six first spots 71, two second spots 72, and two third spots 73. The size of the first spot 71 is greater than the size of the second spot 72, which is greater than the size of the third spot 73. All three spots are elongated rectangles. The six identical first spots 71 in the middle of the figure represent the spots of six first laser tubes 24. These six first spots 71 form a group. The two second spots 72 on either side of each group of first spots 71 represent the spots of two second laser tubes 25. On the side of the two second spots 72 that are far apart from each other, there are two third spots 73, which represent the spots of two third laser tubes 26.

[0063] like Figure 4 and Figure 5As shown, the shaping unit includes multiple shaping units, each including at least a first shaping unit 31 and a second shaping unit 32. The first shaping unit 31 corresponds to the first light-emitting unit 21 and is located on the light-emitting side of the first light-emitting unit 21. The second shaping unit 32 corresponds to the second light-emitting unit 22 and is located on the light-emitting side of the second light-emitting unit 22. The housing 10 has a standing plate 14 at the bottom of the housing 10. The standing plate 14 is located in the middle between the first light-emitting unit 21 and the second light-emitting unit 22. The first shaping unit 31 and the second shaping unit 32 are located on both sides of the standing plate 14, so that the standing plate 14 separates the first shaping unit 31 and the second shaping unit 32. The beam-combining unit 40 is located on the light-emitting side of the first shaping unit 31 and the second shaping unit 32. The coupling unit 50 and the output optical fiber 60 are sequentially arranged on the light-emitting side of the beam-combining unit 40. The output optical fiber 60 is inserted on the side of the housing 10 and is located on the side of the coupling unit 50 away from the beam-combining unit 40.

[0064] like Figure 4 and Figure 5 As shown, the housing 10 is divided into a first region 11 and a second region 12. A first light-emitting unit 21, a second light-emitting unit 22, a first shaping unit 31, a second shaping unit 32, and a vertical plate 14 are disposed in the first region 11. A beam-combining unit 40, a coupling unit 50, and at least a portion of the output optical fiber 60 are disposed in the second region 12. The first shaping unit 31 includes a first collimating mirror 311 and a first reflecting mirror 312 disposed along the optical path transmission direction. There are multiple first collimating mirrors 311 and multiple first reflecting mirrors 312. The multiple first collimating mirrors 311 correspond one-to-one with the multiple semiconductor laser tubes 23 of the first light-emitting unit 21, and the multiple first reflecting mirrors 312 correspond one-to-one with the multiple first collimating mirrors 311. The second shaping unit 32 is located on the light-emitting side of the second light-emitting unit 22. The second shaping unit 32 includes a second collimating mirror 321 and a second reflecting mirror 322 arranged along the optical path transmission direction. There are multiple second collimating mirrors 321 and multiple reflecting mirrors 322. Each of the multiple second collimating mirrors 321 corresponds one-to-one with a multiple semiconductor laser tube 23 of the second light-emitting unit 22, and each of the multiple second reflecting mirrors 322 corresponds one-to-one with a multiple second collimating mirror 321. The beam combining unit 40 includes at least a beam combining mirror 41, a prism 42, and an anti-reflection plate 43. The anti-reflection plate 43 is located between the coupling unit 50 and the prism 42. The second collimating mirror 321 and the second reflecting mirror 322 are located on the side of the prism 42 away from the anti-reflection plate 43, and the second reflecting mirror 322 corresponds to the prism 42. The beam combining mirror 41 is located between the prism 42 and the first reflecting mirror 312, and the first reflecting mirror 312 corresponds to the beam combining mirror 41. Of course, multiple optical lenses can also be provided between the anti-reflection film 43 and the output optical fiber 60 to couple light into the output optical fiber 60.

[0065] like Figure 4As shown, the first region 11 of the housing 10 has a stepped structure, such that the height of the plurality of semiconductor laser tubes 23 of the first light-emitting unit 21, the plurality of semiconductor laser tubes 23 of the second light-emitting unit 22, the plurality of first collimating mirrors 311, the plurality of first reflecting mirrors 312, the plurality of second collimating mirrors 321 and the plurality of second reflecting mirrors 322 gradually decreases along the direction of the beam-combining unit 40.

[0066] In summary, the laser emitted from the first light-emitting unit 21 is collimated by the first collimating mirror 311, reflected by the first reflecting mirror 312, and reflected by the beam-combining mirror 41 before entering the prism 42. The laser emitted from the second light-emitting unit 22 is collimated by the second collimating mirror 321 and reflected by the second reflecting mirror 322 before entering the prism 42. The lasers from the first and second light-emitting units 21 are combined in the prism 42, and then the combined laser exits the prism 42 and passes through the anti-reflective plate 43 and the coupling unit 50 before being coupled into the output optical fiber 60. The shaping unit shapes the laser emitted by the light-emitting units into a rectangular spot, the beam-combining unit 40 combines the spots of the two light-emitting units into a single spot, and the coupling unit 50 couples the spot into the output optical fiber 60.

[0067] In this embodiment, the first collimating lens 311 and the second collimating lens 321 are both slow-axis collimating lenses, and the coupling unit 50 is a combination of a fast-axis focusing lens and a slow-axis focusing lens. The fast-axis focusing lens and the slow-axis focusing lens are arranged sequentially at intervals along the direction close to the output optical fiber 60.

[0068] Example 3

[0069] like Figure 7 The diagram shows a schematic representation of the radial cross-section of the light spot output by the semiconductor laser in Example 3 within the output fiber 60.

[0070] The difference between this embodiment and Embodiment 1 or Embodiment 2 is that the multiple semiconductor laser tubes 23 of the first light-emitting unit 21 and the second light-emitting unit 22 are divided into multiple semiconductor laser tubes 23 with five different widths, namely multiple first laser tubes, multiple second laser tubes, multiple first laser tubes, multiple second laser tubes, and multiple third laser tubes. Specifically, a light-emitting unit includes ten first laser tubes, two second laser tubes, two third laser tubes, two fourth laser tubes, and two fifth laser tubes. The width of the first laser tubes gradually decreases to the width of the fifth laser tube, so that the light spot output by the semiconductor includes five sizes of light spots, namely ten first light spots 71, two second light spots 72, two third light spots 73, two fourth light spots 74, and two fifth light spots 75. The size of the first light spot 71 gradually decreases to the size of the fifth light spot 75. The first laser tube corresponds to the first light spot 71, the second laser tube corresponds to the second light spot 72, the third laser tube corresponds to the third light spot 73, the fourth laser tube corresponds to the fourth light spot 74, and the fifth laser tube corresponds to the fifth light spot 75. The first light spots 71 to the fifth light spots 75 are arranged sequentially from the middle to both ends.

[0071] Of course, as needed, the multiple semiconductor laser tubes 23 of the light-emitting unit may also include semiconductor laser tubes 23 of various strip widths, which is not limited in this application.

[0072] Obviously, the embodiments described above are merely some, not all, embodiments of the present invention. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without inventive effort should fall within the scope of protection of the present invention.

[0073] It should be noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the exemplary embodiments according to this application. As used herein, the singular form is intended to include the plural form as well, unless the context clearly indicates otherwise. Furthermore, it should be understood that when the terms "comprising" and / or "including" are used in this specification, they indicate the presence of features, steps, operations, devices, components, and / or combinations thereof.

[0074] It should be noted that the terms "first," "second," etc., used in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of this application described herein can be implemented in sequences other than those illustrated or described herein.

[0075] The above description is merely a preferred embodiment of the present invention and is not intended to limit the invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A semiconductor laser, characterized by, The application relates to a semiconductor laser device, which comprises a shell (10) and a light-emitting unit, a shaping unit, a beam-combining unit (40), a coupling unit (50) and an output optical fiber (60) arranged in the shell (10), wherein the light-emitting unit comprises a plurality of semiconductor laser single tubes (23) arranged in a straight line, the plurality of semiconductor laser single tubes (23) are divided into semiconductor laser single tubes (23) of multiple strip widths, the semiconductor laser single tubes (23) at both ends of the plurality of semiconductor laser single tubes (23) arranged in a straight line have a strip width smaller than that of the semiconductor laser single tubes (23) in the middle, and laser emitted by the light-emitting unit is coupled into the output optical fiber (60) after sequentially passing through the shaping unit, the beam-combining unit (40) and the coupling unit (50), so that the output optical fiber (60) outputs a light spot composed of multiple sizes; the strip width of the same semiconductor laser single tube (23) is the same, the strip width of different semiconductor laser single tubes (23) is different, and the strip widths of multiple semiconductor laser single tubes (23) gradually decrease from the middle to the outside; in this way, after the light spot of the semiconductor laser single tube (23) with the maximum strip width accommodated in the output optical fiber (60) reaches a quantity limit, the light spot of the semiconductor laser single tube (23) with a strip width smaller than the maximum strip width can be further added, so that the output power of the semiconductor laser, the power density in the output optical fiber (60) and the brightness of the output light spot are improved.

2. The semiconductor laser of claim 1, wherein, The light-emitting unit is one group or multiple groups, when the light-emitting unit is multiple groups, the multiple groups of light-emitting units are the same or different, at least two groups of light-emitting units in the multiple groups of light-emitting units are located on the same side of the shell (10) and have the same light-emitting direction, or at least two groups of light-emitting units in the multiple groups of light-emitting units are respectively located on a pair of opposite sides of the shell (10) and have opposite light-emitting directions.

3. The semiconductor laser of claim 1, wherein, The light-emitting unit is multiple groups, the multiple groups of light-emitting units comprise a first light-emitting unit (21) and a second light-emitting unit (22), The number of strip width types of the plurality of semiconductor laser single tubes (23) in the first light-emitting unit (21) is equal to or different from the number of strip width types of the plurality of semiconductor laser single tubes (23) in the second light-emitting unit (22).

4. The semiconductor laser of claim 3, wherein, The number of semiconductor laser single tubes (23) in the first light-emitting unit (21) is equal to or different from the number of semiconductor laser single tubes (23) in the second light-emitting unit (22).

5. The semiconductor laser of claim 4, wherein, The first light-emitting unit (21) and the second light-emitting unit (22) are arranged on the same side of the shell (10) and have the same light-emitting direction, the first light-emitting unit (21) is the same as the second light-emitting unit (22), The first light emitting unit (21) comprises a plurality of semiconductor laser single tubes (23) of two strip widths, which are a plurality of first laser single tubes (24) and a plurality of second laser single tubes (25) respectively, the strip width of each first laser single tube (24) is smaller than that of each second laser single tube (25), and the plurality of second laser single tubes (25) are provided with the first laser single tubes (24) on both sides.

6. The semiconductor laser of claim 5, wherein, The shaping unit comprises a plurality of shaping units, at least a first shaping unit (31) and a second shaping unit (32), the first shaping unit (31) is located on the light emitting side of the first light emitting unit (21), the second shaping unit (32) is located on the light emitting side of the second light emitting unit (22), the beam combining unit (40) is located between the first shaping unit (31) and the second shaping unit (32) for combining the laser of the first light emitting unit (21) through the first shaping unit (31) and the laser of the second light emitting unit (22) through the second shaping unit (32), and the output optical fiber (60) is located on the side of the coupling unit (50) away from the beam combining unit (40).

7. The semiconductor laser of claim 6, wherein, The shell (10) is divided into a first region (11) and a second region (12), the first light emitting unit (21) and the second light emitting unit (22) are arranged in the first region (11), the first shaping unit (31), the second shaping unit (32), the beam combining unit (40), the coupling unit (50) and at least part of the output optical fiber (60) are arranged in the second region (12), The first shaping unit (31) comprises a first collimating mirror (311) and a first reflecting mirror (312) arranged along the light path transmission direction, the second shaping unit (32) comprises a second collimating mirror (321) and a second reflecting mirror (322) arranged along the light path transmission direction, the beam combining unit (40) comprises at least a beam combining reflecting mirror (41), a prism (42) and an anti-reflection sheet (43), the anti-reflection sheet (43) is located between the coupling unit (50) and the prism (42), the second collimating mirror (321) and the second reflecting mirror (322) are located on the side of the prism (42) away from the anti-reflection sheet (43), and the second reflecting mirror (322) corresponds to the prism (42), the beam combining reflecting mirror (41) is located on the side of the prism (42) facing the first light emitting unit (21) and the second light emitting unit (22), and the first reflecting mirror (312) corresponds to the beam combining reflecting mirror (41).

8. The semiconductor laser of claim 4, wherein, The first light emitting unit (21) and the second light emitting unit (22) are respectively located on a pair of opposite sides of the shell (10) and have opposite light emitting directions, the first light emitting unit (21) and the second light emitting unit (22) are the same, The first light emitting unit (21) comprises a plurality of semiconductor laser single tubes (23) with three kinds of strip widths, i.e., a plurality of first laser single tubes (24), a plurality of second laser single tubes (25) and a plurality of third laser single tubes (26), and the strip width of the first laser single tubes (24) gradually decreases to the strip width of the third laser single tubes (26), at least one second laser single tube (25) is arranged on both sides of the plurality of first laser single tubes (24), and at least one third laser single tube (26) is arranged on both sides of the second laser single tubes (25) away from each other.

9. The semiconductor laser of claim 8, wherein, The aligning unit comprises a plurality of aligning units, and the plurality of aligning units at least comprises a first aligning unit (31) and a second aligning unit (32), the shell (10) has a vertical plate (14) vertically arranged on the bottom of the shell (10), the vertical plate (14) is located between the first light emitting unit (21) and the second light emitting unit (22), the first aligning unit (31) and the second aligning unit (32) are respectively located on both sides of the vertical plate (14), so that the vertical plate (14) separates the first aligning unit (31) and the second aligning unit (32), and at the same time, the first aligning unit (31) corresponds to the first light emitting unit (21), and the second aligning unit (32) corresponds to the second light emitting unit (22), the beam combining unit (40) is located on the light emitting side of the first aligning unit (31) and the second aligning unit (32), the coupling unit (50) and the output optical fiber (60) are sequentially arranged on the light emitting side of the beam combining unit (40).

10. The semiconductor laser of claim 1, wherein, The coupling unit (50) is a single focusing mirror, or a combination of a fast-axis focusing mirror and a slow-axis focusing mirror.

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