Edge polishing apparatus and edge polishing method

Abstract

The present disclosure relates to an edge polishing apparatus and an edge polishing method, the edge polishing apparatus comprising: a carrying module for carrying a silicon wafer; an edge polishing module arranged for polishing an edge of the silicon wafer; a trimming module; wherein the trimming module comprises a polishing portion and a cleaning portion, the polishing portion is arranged to be capable of trimming the edge polishing module by polishing the edge polishing module while the edge polishing module is polishing the edge of the silicon wafer, and the cleaning portion is arranged to be capable of trimming the edge polishing module by cleaning the edge polishing module while the edge polishing module is polishing the edge of the silicon wafer.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to the technical field of semiconductor processing manufacturing, and in particular, to an edge polishing device and an edge polishing method. BACKGROUND

[0002] With the continuous development of the semiconductor industry, the requirements for the geometric parameters, granularity and roughness of the edges of a silicon wafer are becoming higher and higher.

[0003] In the current process of preparing a silicon wafer, many factors can cause the roughness of the edges of the silicon wafer to be too high or even cause the silicon wafer to break, such as the stress on the silicon wafer in the wire sawing and chamfering process, and the collision between the silicon wafer and the inside of a wafer box in which the silicon wafer is accommodated for transfer. These factors can cause defects such as sharp corners, unevenness and burrs on the edges of the silicon wafer, which can easily cause stress concentration. These defects can further cause cracks or even breakage of the silicon wafer in the subsequent processing of the silicon wafer. Therefore, an edge polishing process needs to be performed on the silicon wafer to remove the above-mentioned defects by edge polishing to obtain a silicon wafer with smooth edges.

[0004] For the current edge polishing device, the polishing capacity directly determines the polishing quality of the silicon wafer. Therefore, the edge polishing device needs to be trimmed regularly to maintain the polishing effect. SUMMARY

[0005] Therefore, the present disclosure aims to provide an edge polishing device and an edge polishing method. By using the edge polishing device and the edge polishing method, the edge polishing component can be trimmed while the edge polishing operation is performed on the edges of the silicon wafer by the edge polishing component, thereby improving the polishing efficiency and quality of the edges of the silicon wafer.

[0006] The technical solution of the present disclosure is implemented as follows:

[0007] In a first aspect, the present disclosure provides an edge polishing device, comprising:

[0008] a carrying module for carrying a silicon wafer;

[0009] an edge polishing module configured to polish the edges of the silicon wafer;

[0010] a trimming module;

[0011] The trimming module includes a polishing portion and a cleaning portion. The polishing portion is configured to trim the edge polishing module by polishing the edge polishing module while the edge polishing module is polishing the edge of the silicon wafer. The cleaning portion is configured to trim the edge polishing module by cleaning the edge polishing module while the edge polishing module is polishing the edge of the silicon wafer.

[0012] In some optional examples, the trimming module includes a plurality of polishing portions configured to polish the edge polishing module respectively to make the polished edge polishing module have different roughness.

[0013] In some optional examples, the edge polishing device further includes a control module configured to trigger one of the plurality of polishing portions and the cleaning portion to trim the edge polishing module or trigger a plurality of the plurality of polishing portions and the cleaning portion to trim the edge polishing module in a certain order according to a monitoring result of a surface topography of the edge polishing module.

[0014] In some optional examples, the edge polishing device further includes a monitoring module in communication with the control module, the monitoring module being configured to obtain the monitoring result of the surface topography of the edge polishing module.

[0015] In some optional examples, each of the plurality of polishing portions and the cleaning portion is coaxially arranged along a vertical direction and is configured to be aligned with the edge polishing module respectively along a movement of the edge polishing module in the vertical direction to trim the edge polishing module.

[0016] In some optional examples, the edge polishing device includes two of the bearing modules, two of the edge polishing modules, and two of the trimming modules, wherein,

[0017] Each of the two bearing modules bears one silicon wafer, and

[0018] The two trimming modules are configured to trim the two edge polishing modules respectively while the two edge polishing modules are polishing the edges of the two silicon wafers respectively.

[0019] In a second aspect, the embodiments of the present disclosure provide an edge polishing method, which is performed by using the edge polishing device according to the first aspect, and the edge polishing method includes:

[0020] Bearing a silicon wafer by a bearing module;

[0021] polishing the edge of the silicon wafer by an edge polishing module, the edge polishing module is trimmed by a trimming module.

[0022] In some optional examples, the edge polishing method further comprises:

[0023] In some optional examples, the edge polishing method further comprises:

[0024] In some optional examples, the edge polishing method further comprises:

[0025] In some optional examples, the edge polishing method further comprises:

[0026] In some optional examples, the edge polishing method further comprises:

[0027] In some optional examples, the edge polishing method further comprises:

[0028] In some optional examples, the edge polishing method further comprises:

[0029] In some optional examples, the edge polishing method further comprises:

[0030] In some optional examples, the edge polishing method further comprises, before the at least one of the plurality of polishing portions and the cleaning portion is triggered to trim the edge polishing module according to the monitoring result of the surface topography of the edge polishing module in a certain order by the control module of the edge polishing apparatus while the edge of the silicon wafer is polished by the edge polishing module:

[0031] The monitoring result of the surface topography of the edge polishing module is obtained by a monitoring module of the edge polishing apparatus.

[0032] In some optional examples, the trimming the edge polishing module by one of the polishing portion and the cleaning portion, or the trimming the edge polishing module by at least two of the polishing portion and the cleaning portion in a certain order while the edge of the silicon wafer is polished by the edge polishing module comprises:

[0033] The movement of the plurality of polishing portions and the cleaning portion relative to the edge polishing module in the vertical direction is aligned with the edge polishing module respectively to trim the edge polishing module, wherein each of the plurality of polishing portions and the cleaning portion is coaxially arranged in the vertical direction.

[0034] In some optional examples, in the case that the edge polishing apparatus comprises two of the bearing modules, two of the edge polishing modules and two of the trimming modules, the trimming the edge polishing module by the trimming module while the edge of the silicon wafer is polished by the edge polishing module comprises:

[0035] The two trimming modules trim the two edge polishing modules respectively while the two edge polishing modules polish the edges of the two silicon wafers carried by the two bearing modules respectively.

[0036] This disclosure provides an edge polishing apparatus and an edge polishing method. The edge polishing apparatus includes an edge polishing module for polishing the edges of a silicon wafer carried by a carrier module, and a trimming module. The trimming module includes a polishing section and a cleaning section capable of simultaneously polishing and cleaning the edge polishing module while the edge polishing module polishes the silicon wafer edge. Since the edge polishing module and the trimming module can work synchronously—that is, the edge polishing module can be trimmed by the trimming module while performing edge polishing operations on the silicon wafer—the edge polishing apparatus can operate continuously, improving overall polishing efficiency. Furthermore, since the trimming module can perform real-time trimming of the edge polishing module through both polishing and cleaning, it can not only eliminate damage to the edge polishing module but also promptly remove contaminants adhering to it, ensuring the edge polishing module is in optimal working condition and thus guaranteeing the consistency and high quality of the polishing operation on the silicon wafer edge. Attached Figure Description

[0037] Figure 1 A schematic diagram of an edge polishing apparatus provided in an embodiment of this disclosure is shown;

[0038] Figure 2 A schematic diagram of an edge polishing apparatus provided in another embodiment of this disclosure is shown;

[0039] Figure 3 A perspective view of the edge polishing apparatus provided in an embodiment of this disclosure is shown;

[0040] Figure 4 A top view of the edge polishing apparatus provided in an embodiment of this disclosure is shown;

[0041] Figure 5 A perspective view of a portion of the edge polishing apparatus provided in an embodiment of this disclosure is shown;

[0042] Figure 6 A flowchart of an edge polishing method provided in an embodiment of this disclosure is shown. Detailed Implementation

[0043] The technical solutions in the embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings.

[0044] As explained above, polishing the edges of silicon wafers not only removes tiny cracks or defects that occur at the edges during cutting and processing, but also makes the edges smoother, enhancing the mechanical strength of the wafer and reducing the risk of breakage during subsequent processing. Furthermore, edge cracks and defects can also become hiding places for contaminants and impurities; edge polishing can remove these potential sources of contamination, thereby reducing silicon wafer contamination.

[0045] Referring to Figure 1 Some embodiments of the present disclosure provide an edge polishing apparatus 1 for edge polishing a silicon wafer S. The edge polishing apparatus 1 can include a support chuck 11 having a vacuum suction capability, a round edge polishing drum 12, a plurality of polishing heads 13, and a liquid supply pipe 14. The support chuck 11 can fix the silicon wafer S to be edge polished by means of vacuum suction. The round edge polishing drum 12 can be used in cooperation with the support chuck 11 to complete the polishing of the edge of the silicon wafer S.

[0046] During the edge polishing of the silicon wafer S, the silicon wafer S is fixed by the vacuum chuck 10 and the support chuck 11 can move together with the supported silicon wafer S so that the edge of the silicon wafer S can abut against the polishing heads 13. During the edge polishing of the silicon wafer S, the polishing liquid can be dropped on the substantially central position of the upper surface of the silicon wafer S through the liquid supply pipe 14 arranged at the central position of the round edge polishing drum 12. At the same time, the round edge polishing drum 12 rotates around the central axis X, and the vacuum chuck 10 also rotates the silicon wafer S around the central axis X, so that the polishing liquid dropped on the upper surface of the silicon wafer S can flow to the edge of the silicon wafer S and between the silicon wafer S and the polishing heads 13 under the action of centrifugal force. In this case, the high-speed rotation of the round edge polishing drum 12 also exerts pressure on the silicon wafer S and maintains relative rotation with the silicon wafer S, thereby achieving the polishing of the edge of the silicon wafer S.

[0047] Different applications have different requirements for the shape of the silicon wafer. Referring to Figure 2 which shows another arrangement of the polishing heads 13 of the edge polishing apparatus 1 relative to the silicon wafer S. As shown in Figure 2 , the polishing heads 13 can be divided into three groups, which are respectively used for polishing the upper edge, the lower edge and the circumferential edge of the silicon wafer S. In the process of manufacturing the silicon wafer, the target edge shape can be obtained by setting the inclination angle of the polishing heads for polishing the upper edge and the lower edge according to the target edge shape.

[0048] For the above-mentioned edge polishing apparatus 1, the edge polishing operation can only be performed on a single silicon wafer each time. Frequent stopping of the apparatus and loading and unloading of the silicon wafer seriously affect the production efficiency.

[0049] In addition, with the long-time operation of the polishing heads 13 of the edge polishing apparatus 1, not only will the polishing ability of the polishing heads 13 decrease due to wear, but also contaminants will continuously accumulate at the polishing heads 13. The polishing heads 13 carrying the contaminants may cause uneven polishing of the edge of the silicon wafer when continuing to perform the polishing operation, and even cause secondary damage to the edge of the silicon wafer, so that the polished silicon wafer cannot meet the product requirements.

[0050] In actual production, in view of the above problems, the operator will regularly trim the edge polishing equipment, wherein the main object of trimming is the polishing head. For the current edge polishing equipment, the trimming operation needs to be carried out when the edge polishing equipment is in a stopped state and the silicon wafer has been unloaded, so the trimming operation will affect the production progress. If trimming is not timely, it may be necessary to directly replace the key parts. The replacement of parts not only further prolongs the downtime, but also requires professional personnel to debug the entire edge polishing equipment after the replacement operation is completed, resulting in an increase in labor costs.

[0051] In view of the above problems, embodiments of the present disclosure expect to provide an edge polishing equipment 2. By using the edge polishing equipment, trimming of the edge polishing component can be performed while the edge polishing operation is performed on the edge of the silicon wafer by using the edge polishing component, so as to improve the polishing efficiency and quality of the edge of the silicon wafer. The edge polishing equipment 2 is described in detail below with reference to the accompanying drawings.

[0052] Referring to Figure 3 and Figure 4 , the edge polishing equipment 2 can include a carrying module 21, an edge polishing module 22, and a trimming module 23. The carrying module 21 can be used to carry the silicon wafer S. The edge polishing module 22 can be used to polish the edge of the silicon wafer S. The trimming module 23 can be used to trim the edge polishing module 22.

[0053] The trimming module 23 can include a trimming portion 231 and a cleaning portion 232. The trimming portion 231 can be configured to trim the edge polishing module 22 by trimming the edge polishing module 22 while the edge polishing module 22 polishes the edge of the silicon wafer S. The cleaning portion 232 can be configured to trim the edge polishing module 22 by cleaning the edge polishing module 22 while the edge polishing module 22 polishes the edge of the silicon wafer S.

[0054] The edge polishing equipment 2 is further described below with reference to Figure 3 and Figure 4 .

[0055] The carrying module 21 can include a carrying table 211 and a support column 212. The carrying table 211 can be substantially disc-shaped and can have a substantially horizontal upper surface. The upper surface can be in contact with one major surface of the silicon wafer S to horizontally carry the silicon wafer S. It can be understood that the carrying table 211 can also have other shapes, and these alternative embodiments also fall within the protection scope of the present disclosure. The disc-shaped carrying table is described below as an example.

[0056] The diameter of the support table 211 is smaller than the diameter of the silicon wafer S, and the center of the support table 211 is aligned with the center of the silicon wafer S, that is, the support table 211 supports the silicon wafer S at a central position of the silicon wafer S so that a circumferential edge portion of the silicon wafer can protrude from the support table 211. In the present disclosure, the circumferential edge portion of the silicon wafer refers to a circumferential side edge of the silicon wafer and portions of the two main surfaces of the silicon wafer adjacent to the circumferential side edge.

[0057] The support column 212 can be disposed below the support table 211 and can rotate about its central axis. The support column 212 can support the support table 211 in the vertical direction and can be fixedly connected with the support column 212, so that when the support column 212 rotates about its central axis, the support table 211 and the silicon wafer S supported by the support table 211 can be driven to rotate therewith.

[0058] The edge polishing module 22 is overall cylindrical and is disposed with its central axis extending in the vertical direction. The edge polishing module 22 includes an edge polishing portion 221 disposed on a circumferential side surface near the top. The edge polishing portion 221 is disposed at a position in the vertical direction that is aligned with the circumferential side edge of the silicon wafer S supported by the support module 21, and can be brought into contact with the circumferential edge portion of the silicon wafer S in the horizontal direction. The edge polishing portion 221 is disposed to be rotatable about the central axis of the edge polishing module 22, so as to polish the circumferential edge portion of the silicon wafer S by rotational movement relative to the silicon wafer S while in contact with the circumferential edge portion of the silicon wafer S.

[0059] In the embodiment shown in FIG. 1, the edge polishing module 22 is disposed in the vertical direction above the support module 21. The edge polishing module 22 is disposed to be rotatable about its central axis in the horizontal direction, so as to polish the circumferential edge portion of the silicon wafer S by rotational movement relative to the silicon wafer S while in contact with the circumferential edge portion of the silicon wafer S. Figure 3 In the embodiment shown in FIG. 1, the edge polishing module 22 is disposed in the vertical direction above the support module 21. The edge polishing module 22 is disposed to be rotatable about its central axis in the horizontal direction, so as to polish the circumferential edge portion of the silicon wafer S by rotational movement relative to the silicon wafer S while in contact with the circumferential edge portion of the silicon wafer S. In the embodiment shown in FIG. 1, the edge polishing module 22 is disposed in the vertical direction above the support module 21. The edge polishing module 22 is disposed to be rotatable about its central axis in the horizontal direction, so as to polish the circumferential edge portion of the silicon wafer S by rotational movement relative to the silicon wafer S while in contact with the circumferential edge portion of the silicon wafer S.

[0060] It can be understood that the polishing and cleaning parts can also be arranged in other ways. For example, the polishing and cleaning parts can be arranged on the circumferential side edges of the same disc-shaped body and abut in the circumferential direction of the disc-shaped body, so that the polishing and cleaning parts can contact the edge polishing part 221 of the edge polishing module 22 respectively to trim it by rotating the disc-shaped body.

[0061] For the edge polishing device 2 provided by the embodiments of the present disclosure, the edge polishing module 22 can be trimmed by the trimming module 23 without loading the silicon wafer, or the edge polishing module 22 can be trimmed by the trimming module 23 while the edge of the silicon wafer S is polished by the edge polishing module 22 under the condition that the silicon wafer S is carried by the carrying module 21.

[0062] The polishing part 231 of the trimming module 23 can be made of diamond, for example. The polishing part 231 can remove local damage on the entire edge polishing part 221 of the edge polishing module 22 by uniformly polishing the entire edge polishing part 221. The cleaning part 232 of the trimming module 23 can be in the form of a brush, for example, to remove contaminants such as particulate matter, impurities, etc. attached to the surface of the edge polishing part 221 of the edge polishing module 22 by brushing the surface.

[0063] When the edge polishing device 2 is used, the corresponding trimming operation can be performed according to the state of the edge polishing part 221 of the edge polishing module 22. For example, only one of the polishing part 231 and the cleaning part 232 can be selected to perform a round of trimming operation, or the polishing part 231 and the cleaning part 232 can be switched continuously to perform a round of trimming operation together. For the case of using both the polishing part 231 and the cleaning part 232, the polishing part 231 and the cleaning part 232 can be repeatedly switched throughout the entire polishing operation process of the edge polishing module 22 to keep real-time trimming of the edge polishing module 22.

[0064] The edge polishing device 2 comprises an edge polishing module 22 for polishing the edge of a silicon wafer S carried by a carrying module 21, and a trimming module 23. The trimming module 23 comprises a polishing part 231 and a cleaning part 232 capable of respectively polishing and cleaning the edge polishing module while the edge polishing module is polishing the edge of the silicon wafer. Since the edge polishing module 22 and the trimming module 23 can work synchronously, i.e. the edge polishing module 22 can be trimmed by the trimming module 23 while performing the edge polishing operation on the silicon wafer S, the edge polishing module 22 can be continuously operated, and the overall polishing efficiency is improved. In addition, since the trimming module 23 can trim the edge polishing module 22 in real time by polishing and cleaning, not only the damage on the edge polishing module 22 can be eliminated, but also the pollutants attached to the edge polishing module 22 can be cleaned in time, so as to ensure that the edge polishing module 22 is in an optimal working state, and the consistency and high quality of the polishing operation on the edge of the silicon wafer are ensured.

[0065] In order to realize accurate trimming of the edge polishing module 22 to improve the trimming efficiency, according to some embodiments of the present disclosure, the trimming module 23 can comprise a plurality of polishing parts arranged to respectively polish the edge polishing module 22 so that the polished edge polishing module 22 has different roughness.

[0066] In the embodiments shown in Figure 3 , the polishing part 231 comprises a first polishing part 231A and a second polishing part 231B. The first polishing part 231A and the second polishing part 231B can be made of the same material and have similar structure and size, but have different polishing capacity. For example, referring to Figure 5 , the first polishing part 231A and the second polishing part 231B can be made of diamond material, have the same radial size in the shape of a disc and be coaxially arranged, but have different mesh numbers, wherein the mesh number of the first polishing part 231A can be higher than that of the second polishing part 231B. It can be understood that the mesh number of the diamond material depends on the particle size of the diamond abrasive, and the higher the mesh number, the finer the diamond particles; the lower the mesh number, the coarser the diamond particles. In view of this, the first polishing part 231A with a higher mesh number can make the object polished by it have smaller roughness, while the second polishing part 231B with a lower mesh number can make the object polished by it have larger roughness.

[0067] The first polishing part 231A and the second polishing part 231B can be suitable for different production requirements due to different polishing capabilities, and thus the first polishing part 231A and the second polishing part 231B can be appropriately selected from the perspective of balancing production efficiency and production quality. For example, when there is a small damage on the surface of the edge polishing part 221 of the edge polishing module 22, the first polishing part 231A with a relatively high mesh number can be used to trim the edge polishing part 221 to remove the damage; and when there is a large damage on the surface of the edge polishing part 221 of the edge polishing module 22, the second polishing part 231B with a relatively low mesh number can be used to trim the edge polishing part 221 to quickly eliminate the surface unevenness of the edge polishing part 221 caused by the damage, and in order to ensure the stability of the polishing capability of the edge polishing part 221, the first polishing part 231A can also be used to trim the edge polishing part 221 after the second polishing part 231B is used to trim the edge polishing part 221, so as to keep the surface roughness of the edge polishing part 221 meeting the target requirement.

[0068] In the above embodiments, two polishing parts are taken as examples for illustration, and it can be understood that the edge polishing module 22 can have more polishing parts. The arrangement of the polishing parts is not limited to the above embodiments, but other arrangements can also be used.

[0069] By arranging multiple polishing parts, the use flexibility of the edge polishing device can be improved. Moreover, appropriate selection of the polishing parts and the cleaning part according to the state of the trimming object can improve the trimming efficiency, and in the case that the trimming operation and the polishing operation are performed synchronously, the polishing efficiency can also be improved.

[0070] In order to be able to select an appropriate trimming strategy according to the specific situation of the edge polishing module, according to some embodiments of the present disclosure, referring to Figure 5 The edge polishing device 2 can further include a control module 24 configured to trigger one of the multiple polishing parts and the cleaning part to trim the edge polishing module 22 or trigger multiple ones of the multiple polishing parts and the cleaning part to trim the edge polishing module 22 in a certain order according to the monitoring result of the surface topography of the edge polishing module 22. The control module 24 can be arranged in the driving part DR, for example. The control module 24 can include a memory 241 and a processor 242, for example.

[0071] The following will continue to take an example in which the trimming module 23 includes two polishing parts, i.e., the first polishing part 231A and the second polishing part 231B.

[0072] The control module 24 can perform switching between the first polishing section 231 A, the second polishing section 231B, and the cleaning section 232. Specifically, the control module 24 can select any one of the first polishing section 231 A, the second polishing section 231B, and the cleaning section 232 to perform the trimming operation. For example, when it is detected that there is a small damage on the surface of the edge polishing section 221 of the edge polishing module 22, the control module 24 can control the first polishing section 231 A with a relatively high mesh to be aligned with the edge polishing section 221 of the edge polishing module 22, and to be pushed towards the edge polishing section 221 of the edge polishing module 22 along the horizontal direction while actuating the first polishing section 231 A to rotate around the central axis thereof, so as to eliminate the damage on the surface of the edge polishing section 221 by the first polishing section 231 A to uniformly polish the entire surface of the first polishing section 231 A, and to make the edge polishing section 221 have a uniform polished surface again.

[0073] In addition, after the edge polishing module 22 has been working for a long time, as the edge polishing module 22 is continuously worn and contaminated, it can be detected that there is a large or more damage and more contaminants attached on the surface of the edge polishing section 221 of the edge polishing module 22, in which case, it can be required that both the first polishing section 231 A and the second polishing section 231B participate in the trimming operation in a certain order, or it can be required that one of the first polishing section 231 A and the second polishing section 231B and the cleaning section 232 participate in the trimming operation in a certain order, or it can be required that all of the first polishing section 231 A, the second polishing section 231B, and the cleaning section 232 participate in the trimming operation in a certain order. For this case, some trimming strategies can be pre-stored in the memory 241 of the control module 24. After receiving the monitoring result of the surface topography of the edge polishing section 221 of the edge polishing module 22, the processor 242 of the control module 24 can select an appropriate trimming strategy according to the monitoring result. For example, the trimming strategy can include switching at least two of the first polishing section 231 A, the second polishing section 231B, and the cleaning section 232 of the trimming module 23 to trim the edge polishing section 221 of the edge polishing module 22 in a certain order and time interval. The combination of the trimming components, the operation order of the related trimming components, and / or the operation time of each of the related trimming components can be different between different trimming strategies to meet different trimming requirements. It can be understood that the trimming strategy can be obtained based on past production experience, experimental data, specific process requirements, etc.

[0074] The control module 24 can automatically select an appropriate trimming strategy in an intelligent manner without human intervention, thereby not only further reducing labor costs, but also making the trimming operation more accurate.

[0075] In order to further improve the intelligent level and working efficiency of the edge polishing device 2, in some embodiments of the present disclosure, referring to Figure 3 , the edge polishing device 2 can further include a monitoring module 25 in communication with the control module 24, and the monitoring module 25 is configured to obtain monitoring results of the surface topography of the edge polishing module 22. The monitoring module 25 can be arranged on the top of the trimming module 23, for example.

[0076] It can be understood that the surface topography of the edge polishing module 22 can be monitored by a device independent of the edge polishing device 2, and the monitoring results can be imported into the control module 24, or detailed information about the surface topography of the edge polishing module can be obtained by the monitoring module 25 of the edge polishing device 2. This is also further conducive to real-time monitoring and trimming of the edge polishing module 22. The monitoring module 25 can have functions such as real-time monitoring, data collection, high-precision detection, etc.

[0077] By using the edge polishing device 2 provided by the embodiments of the present disclosure, it is also possible to simultaneously trim two edge polishing modules while simultaneously polishing two silicon wafers. Specifically, referring to Figure 3 and Figure 4 , the edge polishing device 2 can include two bearing modules 21, two edge polishing modules 22, and two trimming modules 23, wherein each of the two bearing modules 21 bears one silicon wafer S, and the two trimming modules 23 are arranged to trim the two edge polishing modules 22, respectively, while the two edge polishing modules 22 are polishing the edges of the two silicon wafers S carried by the two bearing modules 21, respectively.

[0078] As shown in Figure 4 , the two edge polishing modules 22 can be arranged side by side, and the two bearing modules 21 and the two trimming modules 23 are arranged in a cross manner from the outside to surround the two edge polishing modules 22, i.e., each silicon wafer is located between the two trimming modules 23. The diameters of the edge polishing modules 22 and the trimming modules 23 are arranged such that each edge polishing module 22 is in contact with the circumferential edge portion of the two silicon wafers carried by the bearing module 21, and the trimming module 23 is not in contact with the silicon wafers at all, and each trimming module 23 is only in contact with one edge polishing module 22. Thus, through the relative rotational movement among the silicon wafers, the edge polishing modules 22, and the trimming modules 23, it is possible to simultaneously polish the circumferential edge portion of each silicon wafer by the two edge polishing modules 22, and at the same time, each edge polishing module 22 can be trimmed by one trimming module 23. In this way, the polishing efficiency is significantly improved, and the consistency of edge polishing for different silicon wafers can be improved.

[0079] Some embodiments of the present disclosure also provide an edge polishing method, referring to Figure 6The edge polishing method is performed by using the edge polishing apparatus 2 described above, and the edge polishing method comprises:

[0080] S01: loading the silicon wafer by the loading module 21;

[0081] S02: while polishing the edge of the silicon wafer by the edge polishing module 22, trimming the edge polishing module 22 by the trimming module 23.

[0082] According to some embodiments of the present disclosure, while polishing the edge of the silicon wafer by the edge polishing module 22, the trimming of the edge polishing module 22 by the trimming module 23 comprises:

[0083] While polishing the edge of the silicon wafer by the edge polishing module 22, the trimming of the edge polishing module 22 by one of the polishing part 231 and the cleaning part 232, or the trimming of the edge polishing module 22 by at least two of the polishing part 231 and the cleaning part 232 in a certain order.

[0084] According to some embodiments of the present disclosure, in the case that the trimming module 23 comprises a plurality of polishing parts 231, the trimming of the edge polishing module 22 by one of the polishing part 231 and the cleaning part 232 while polishing the edge of the silicon wafer by the edge polishing module 22 comprises:

[0085] According to some embodiments of the present disclosure, in the case that the trimming module 23 comprises a plurality of polishing parts 231, the trimming of the edge polishing module 22 by one of the polishing part 231 and the cleaning part 232 while polishing the edge of the silicon wafer by the edge polishing module 22 comprises:

[0086] According to some embodiments of the present disclosure, in the case that the trimming module 23 comprises a plurality of polishing parts 231, the trimming of the edge polishing module 22 by one of the polishing part 231 and the cleaning part 232 while polishing the edge of the silicon wafer by the edge polishing module 22 comprises:

[0087] According to some embodiments of the present disclosure, in the case that the trimming module 23 comprises a plurality of polishing parts 231, the trimming of the edge polishing module 22 by one of the polishing part 231 and the cleaning part 232 while polishing the edge of the silicon wafer by the edge polishing module 22 comprises:

[0088] According to some embodiments of the present disclosure, before the edge polishing module 22 is trimmed by one of the plurality of polishing sections 231 and the cleaning section 232, or by at least two of the plurality of polishing sections 231 and the cleaning section 232 in a certain order while the edge of the silicon wafer is polished by the edge polishing module 22, the edge polishing method further comprises:

[0089] The monitoring module 25 of the edge polishing apparatus 2 acquires the monitoring result of the surface topography of the edge polishing module 22.

[0090] According to some embodiments of the present disclosure, before the edge polishing module 22 is trimmed by one of the plurality of polishing sections 231 and the cleaning section 232, or by at least two of the plurality of polishing sections 231 and the cleaning section 232 in a certain order while the edge of the silicon wafer is polished by the edge polishing module 22, the edge polishing method further comprises:

[0091] The monitoring module 25 of the edge polishing apparatus 2 acquires the monitoring result of the surface topography of the edge polishing module 22.

[0092] According to some embodiments of the present disclosure, the edge polishing module 22 is trimmed by one of the plurality of polishing sections 231 and the cleaning section 232, or by at least two of the plurality of polishing sections 231 and the cleaning section 232 in a certain order while the edge of the silicon wafer is polished by the edge polishing module 22 comprises:

[0093] The plurality of polishing sections 231 and the cleaning section 232 are respectively aligned with the edge polishing module 22 in a vertical direction to trim the edge polishing module 22, wherein each of the plurality of polishing sections 231 and the cleaning section 232 is coaxially arranged in the vertical direction.

[0094] According to some embodiments of the present disclosure, in the case where the edge polishing apparatus 2 comprises two bearing modules 21, two edge polishing modules 22 and two trimming modules 23, the edge polishing module 22 is trimmed by the trimming module 23 while the edge of the silicon wafer is polished by the edge polishing module 22 comprises:

[0095] The two edge polishing modules 22 are respectively trimmed by the two trimming modules 23 while the edges of the two silicon wafers carried by the two bearing modules 21 are respectively polished by the two edge polishing modules 22.

[0096] The above merely provides the specific implementation of the present disclosure, but the protection scope of the present disclosure is not limited thereto, any person skilled in the art can easily think of the changes or replacements within the technical range disclosed by the present disclosure, which should be covered in the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be subject to the protection scope of the claims.

Claims

1. An edge polishing device, characterized in that, The edge polishing equipment includes: A carrier module used to support silicon wafers; An edge polishing module is configured to polish the edges of the silicon wafer; Modify the module; The trimming module includes a polishing section and a cleaning section. The polishing section is configured to trim the edge polishing module by polishing it simultaneously with the edge polishing module polishing the edge of the silicon wafer. The cleaning section is configured to trim the edge polishing module by cleaning it simultaneously with the edge polishing module polishing the edge of the silicon wafer. The finishing module includes multiple polishing sections, which are configured to polish the edge polishing module separately, so that the polished edge polishing module has different roughness. Each of the plurality of polishing sections and the cleaning section are arranged coaxially in the vertical direction and configured to be movable relative to the edge polishing module in the vertical direction to align with the edge polishing module respectively, so as to trim the edge polishing module.

2. The edge polishing equipment according to claim 1, characterized in that, The edge polishing equipment further includes a control module, which is configured to trigger one of the plurality of polishing sections and the cleaning section to trim the edge polishing module based on the monitoring results of the surface morphology of the edge polishing module, or to trigger multiple of the plurality of polishing sections and the cleaning section to trim the edge polishing module in a certain order.

3. The edge polishing equipment according to claim 2, characterized in that, The edge polishing device also includes a monitoring module that communicates with the control module, the monitoring module being configured to acquire monitoring results of the surface morphology of the edge polishing module.

4. The edge polishing apparatus according to any one of claims 1 to 3, characterized in that, The edge polishing equipment includes two support modules, two edge polishing modules, and two trimming modules, wherein... Each of the two carrier modules carries a silicon wafer, and The two trimming modules are configured to trim the edges of the two silicon wafers supported by the two carrier modules while the two edge polishing modules polish the edges of the two wafers respectively.

5. An edge polishing method, characterized in that, The edge polishing method is performed using an edge polishing apparatus according to any one of claims 1 to 4, the edge polishing method comprising: The silicon wafer is supported by a carrier module; While the edge of the silicon wafer is polished by the edge polishing module, the edge polishing module is trimmed by the trimming module.

6. The edge polishing method according to claim 5, characterized in that, The step of polishing the edge of the silicon wafer using the edge polishing module while simultaneously trimming the edge polishing module using the trimming module includes: While the edge of the silicon wafer is polished by the edge polishing module, the edge polishing module is trimmed by one of the polishing section and the cleaning section, or the edge polishing module is trimmed by at least two of the polishing section and the cleaning section in a certain order.

7. The edge polishing method according to claim 6, characterized in that, When the trimming module includes multiple polishing sections, the step of trimming the edge polishing module by one of the polishing sections and the cleaning section while polishing the edge of the silicon wafer by the edge polishing module includes: While the edge of the silicon wafer is polished by the edge polishing module, the control module of the edge polishing equipment triggers one of the multiple polishing sections and the cleaning section in a certain order to trim the edge polishing module based on the monitoring results of the surface morphology of the edge polishing module.

8. The edge polishing method according to claim 6, characterized in that, When the trimming module includes multiple polishing sections, the step of trimming the edge polishing module by passing at least two of the polishing sections and cleaning sections in a certain order while polishing the edge of the silicon wafer by the edge polishing module includes: While the edge of the silicon wafer is polished by the edge polishing module, the control module of the edge polishing equipment triggers at least one of the plurality of polishing sections and the cleaning section to trim the edge polishing module in a certain order according to the monitoring results of the surface morphology of the edge polishing module.

9. The edge polishing method according to claim 7, characterized in that, Before the edge polishing method further includes, while the edge of the silicon wafer is polished by the edge polishing module, the control module of the edge polishing equipment triggers one of the plurality of polishing sections and the cleaning section in a certain sequence to trim the edge polishing module based on the monitoring results of the surface morphology of the edge polishing module, the edge polishing method also includes: The monitoring results of the surface morphology of the edge polishing module are obtained through the monitoring module of the edge polishing equipment.

10. The edge polishing method according to claim 8, characterized in that, Before the edge polishing method further includes, while the edge of the silicon wafer is polished by the edge polishing module, the control module of the edge polishing equipment triggers at least one of the plurality of polishing sections and the cleaning section in a certain sequence to trim the edge polishing module based on the monitoring results of the surface morphology of the edge polishing module, the edge polishing method also includes: The monitoring results of the surface morphology of the edge polishing module are obtained through the monitoring module of the edge polishing equipment.

11. The edge polishing method according to any one of claims 6 to 10, characterized in that, The step of polishing the edge of the silicon wafer simultaneously with polishing the edge of the edge polishing module, and then trimming the edge polishing module by one of the polishing section and the cleaning section, or trimming the edge polishing module by at least two of the polishing section and the cleaning section in a certain order, includes: The plurality of polishing sections and the cleaning section are moved vertically relative to the edge polishing module to be aligned with the edge polishing module, so as to trim the edge polishing module. Each of the plurality of polishing sections and the cleaning section are arranged coaxially in the vertical direction.

12. The edge polishing method according to any one of claims 6 to 10, characterized in that, In the case where the edge polishing equipment includes two carrier modules, two edge polishing modules, and two trimming modules, the step of simultaneously polishing the edge of the silicon wafer using the edge polishing modules and trimming the edge polishing modules using the trimming modules includes: While the two edge polishing modules polish the edges of the two silicon wafers supported by the two carrier modules, the two trimming modules trim the edges of the two edge polishing modules.

Images