Graphite carrier plate and method of making same

Abstract

The present disclosure provides a graphite carrier plate and a manufacturing method thereof, and belongs to the field of semiconductors. The graphite carrier plate comprises a graphite body and a first silicon carbide coating. The graphite body has a plurality of spaced recesses, the recess bottoms have a plurality of spaced first protrusions, and the first protrusions are in the form of table-shaped or conical structures. The first silicon carbide coating is located in the recesses and covers the first protrusions and the gaps between the first protrusions. The graphite carrier plate can effectively improve the deformation of the graphite carrier plate in a high-temperature environment and prolong the service life of the graphite carrier plate.

Description

Technical Field

[0001] This disclosure relates to the semiconductor field, and in particular to a graphite carrier disk and a method for manufacturing the same. Background Technology

[0002] Graphite carriers are widely used in the semiconductor field for the fabrication of epitaxial layers.

[0003] In related technologies, a method for fabricating an epitaxial layer is provided, which uses a metal-organic chemical vapor deposition (MOCVD) apparatus or an AIXTRON metal-organic chemical vapor deposition apparatus to grow the aforementioned semiconductor layer. The method includes: placing a substrate in a recessed region of a graphite carrier within a reaction chamber, and growing the aforementioned epitaxial layer on the substrate surface.

[0004] During the growth of the epitaxial layer, the heat required for growth is transferred to the substrate surface through the graphite carrier. Due to the high growth temperature of the epitaxial layer, the high temperature causes the graphite carrier to deform, which is detrimental to the growth of the epitaxial layer. Summary of the Invention

[0005] This disclosure provides a graphite carrier disk that can effectively improve the deformation of the graphite carrier disk under high-temperature conditions. The technical solution is as follows:

[0006] A graphite carrier disk is provided, the graphite carrier disk comprising:

[0007] Graphite body and first silicon carbide coating;

[0008] The graphite body has multiple spaced grooves, and the bottom of the grooves has multiple spaced first protrusions, the first protrusions being truncated or conical in shape.

[0009] The first silicon carbide coating is located in the groove and covers the first protrusion and the gap between the first protrusion.

[0010] Optionally, the bottom width of the first protrusion is 3 to 4 μm.

[0011] Optionally, the height of the first protrusion is 1.7-23 μm.

[0012] Optionally, the spacing between the first protrusions is 0.5 to 4 μm.

[0013] Optionally, the angle between the bottom surface and the side surface of the first protrusion is in the range of 30° to 80°.

[0014] Optionally, the graphite carrier disk further includes: a plurality of second protrusions;

[0015] The plurality of second protrusions are located on the upper surface of the graphite body, and the second protrusions are frustum-shaped or cone-shaped structures;

[0016] The first silicon carbide coating also covers the second protrusion and the gap between the second protrusion.

[0017] Optionally, the shape of the first protrusion can be any one of a cone, a frustum, a pyramid, or a truncated pyramid.

[0018] Optionally, the side of the first protrusion is an outwardly convex curved surface.

[0019] Optionally, the thickness of the first silicon carbide coating is 100–110 μm.

[0020] On the other hand, a method for manufacturing a graphite carrier disk is provided, the method comprising:

[0021] Provide a graphite body;

[0022] The graphite body is patterned to form multiple spaced grooves, and the bottom of the grooves has multiple spaced first protrusions, which are frustum-shaped or cone-shaped structures.

[0023] A first silicon carbide coating is formed, which is located in the groove and covers the first protrusion and the gap between the first protrusion.

[0024] The beneficial effects of the technical solutions provided in this disclosure are:

[0025] In this embodiment, multiple spaced-apart first protrusions, shaped as frustums or cones, are formed at the bottom of the grooves of a graphite carrier. A first silicon carbide coating is then formed covering the first protrusions and the gaps between them. Because silicon carbide and graphite have different lattice constants, directly forming the silicon carbide coating on the graphite carrier surface results in a high defect density, which is detrimental to the lifespan of the graphite carrier. In this embodiment, the frustum or cone-shaped first protrusions, with their beveled sides, allow the lattice constant mismatch between silicon carbide and graphite to be offset during the growth of the first silicon carbide coating. This reduces the defect density on the surface of the first silicon carbide coating and improves the lifespan of the graphite carrier. Furthermore, since the silicon carbide and graphite lattices overlap, the first protrusions help mitigate the thermal expansion and contraction effects between the graphite and silicon carbide lattices under high-temperature conditions, thereby improving the lifespan of the graphite carrier and preventing deformation. Attached Figure Description

[0026] To more clearly illustrate the technical solutions in the embodiments of this disclosure, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0027] Figure 1 This is a top view of a graphite carrier disk provided by related technologies;

[0028] Figure 2 This is a schematic diagram of a graphite lattice and a silicon carbide lattice provided by related technologies;

[0029] Figure 3 This is a schematic diagram of the structure of a graphite lattice and a silicon carbide lattice provided in an embodiment of this disclosure;

[0030] Figure 4 This is a top view of a graphite carrier disk provided in an embodiment of this disclosure;

[0031] Figure 5 This is a cross-sectional view of a graphite carrier disk provided in an embodiment of this disclosure;

[0032] Figure 6 This is a top view of another graphite carrier provided in an embodiment of this disclosure;

[0033] Figure 7 This is a cross-sectional view of another graphite carrier provided in an embodiment of this disclosure;

[0034] Figure 8 This is a top view of another graphite carrier provided in an embodiment of this disclosure;

[0035] Figure 9 This is a cross-sectional view of another graphite carrier provided in an embodiment of this disclosure;

[0036] Figure 10 This is a cross-sectional view of another graphite carrier provided in an embodiment of this disclosure;

[0037] Figure 11 This is a flowchart of a method for manufacturing a graphite carrier disk according to an embodiment of the present disclosure;

[0038] Figure 12 This is a flowchart of another method for manufacturing a graphite carrier disk provided in this embodiment.

[0039] Figure label:

[0040] 11: Graphite lattice; 12: Silicon carbide lattice; 13: Protrusion.

[0041] 101: Graphite body; 102: First silicon carbide coating; 103: Groove; 104: First protrusion; 105: Upper surface of graphite body.

[0042] 201: Second protrusion.

[0043] 301: Third protrusion. Detailed Implementation

[0044] To make the objectives, technical solutions, and advantages of this disclosure clearer, the embodiments of this disclosure will be described in further detail below with reference to the accompanying drawings.

[0045] Figure 1 This is a top view of a graphite carrier disk provided in related technologies; see [link / reference]. Figure 1 The graphite carrier includes 14 circular 4-inch grooves 103, that is, the specifications of the graphite carrier are 14 (pieces) * 4 (inches). The grooves 103 are used to place the substrate, and the upper surface 105 of the graphite body is between the grooves 103.

[0046] Figure 2 A schematic diagram of a graphite lattice and a silicon carbide lattice provided for related technologies. See also... Figure 2 , Figure 2 The graphite lattice 11 and the silicon carbide lattice 12 are shown.

[0047] The silicon carbide lattice 12 is displaced and stacked on the surface of the graphite lattice 11, that is, the silicon carbide lattice 12 covers the connection of the graphite lattice 11, while the connection of the silicon carbide lattice 12 is located on the surface of the graphite lattice 11.

[0048] Figure 3 This is a schematic diagram of a graphite lattice and a silicon carbide lattice provided as embodiments of this disclosure. See also... Figure 3 , Figure 3 and Figure 2 The difference lies in: Figure 3 It also includes protrusion 13.

[0049] Silicon carbide lattices 12 are interleaved and cover the surface of graphite lattice 1, with the rightmost end of silicon carbide lattice 12 contacting the side of protrusion 13, and the rightmost end of graphite lattice 11 also contacting the side of protrusion 13. The protrusion 13 is positioned to precisely offset the portion of the rightmost end of silicon carbide lattice 12 that extends beyond the surface of graphite lattice 13, thereby compensating for the lattice mismatch between the silicon carbide lattice and the graphite lattice.

[0050] Figure 4 This is a top view of a graphite carrier disk provided for an embodiment of this disclosure. See also... Figure 4The graphite carrier disk includes: a graphite body 101 and a first silicon carbide coating 102; the graphite body 101 has a plurality of spaced grooves 103, and the bottom of the grooves 103 has a plurality of spaced first protrusions 104, the first protrusions 104 being frustum-shaped or conical; the first silicon carbide coating 102 is located in the grooves 103 and covers the first protrusions 104 and the gaps between the first protrusions 104.

[0051] In this embodiment, multiple spaced-apart first protrusions are formed at the bottom of the grooves of a graphite carrier disk, with the width of the first protrusions decreasing sequentially from bottom to top. Subsequently, a first silicon carbide coating is formed covering the first protrusions and the gaps between them. Because silicon carbide and graphite have different lattice constants, directly forming the silicon carbide coating on the graphite carrier disk surface results in a high defect density, which is detrimental to improving the lifespan of the graphite carrier disk. In this embodiment, a platform-shaped or conical first protrusion is used. Since the sides of the first protrusion are sloped, the lattice constant mismatch between silicon carbide and graphite can be offset at these sloped surfaces during the growth of the first silicon carbide coating (see [link to documentation]). Figure 3 The attached diagram is shown. Figure 3 Only a single layer of silicon carbide lattice and a single layer of graphite lattice are shown, that is, the bottom silicon carbide lattice and the top graphite lattice. In reality, Figure 4 The silicon carbide coating and the graphite substrate have far more than two lattice layers stacked together, thereby reducing the defect density on the surface of the first silicon carbide coating and extending the service life of the graphite substrate. Simultaneously, because the silicon carbide and graphite lattices are interleaved, the first protrusion helps alleviate the thermal expansion and contraction effect between the graphite and silicon carbide lattices under high-temperature conditions, thus extending the service life of the graphite substrate and preventing deformation.

[0052] It is worth noting that, in the embodiments disclosed herein, the width of the protrusion refers to the diameter of the bottom surface or the side length of the bottom surface of the protrusion.

[0053] Figure 4 The upper surface 105 of the graphite body is also shown, which refers to the side of the graphite body 101 with the groove 103.

[0054] It is worth noting that, Figure 4 The number of the first protrusion 104 is only for example; in actual manufacturing, the number of the first protrusion 104 is greater than [a certain number]. Figure 4 The number of the first protrusion 104 in the middle.

[0055] See you again Figure 4 It can be seen that the top view of the first protrusion 104 is circular. In the actual manufacturing process, the top view of the first protrusion 104 can also be triangular, square, or other shapes.

[0056] Figure 5 A cross-sectional view of a graphite carrier disk provided in an embodiment of this disclosure. Figure 5 It is a graphite disk edge Figure 4 The cross-sectional view in the vertical direction of the dashed line AA' in the figure.

[0057] The first protrusions 104 are spaced apart at the bottom of the groove 103. The first silicon carbide coating 102 covers the first protrusions 104 and the gaps between them. At the same time, the upper surface of the first silicon carbide coating 102 forms a plane to facilitate the subsequent placement of the substrate.

[0058] In this embodiment of the disclosure, the three-dimensional shape of the first protrusion 104 is any one of a cone, a frustum, a pyramid, or a truncated pyramid.

[0059] For example, the three-dimensional shape of the first protrusion 104 is conical.

[0060] In this embodiment of the disclosure, the first protrusion 104 with the above-described shape can facilitate the manufacture of the first protrusion 104. At the same time, the first protrusion 104 with the above-described shape combined with the first silicon carbide coating 102 can effectively alleviate the deformation of the graphite carrier and improve the service life of the graphite carrier.

[0061] In this embodiment of the disclosure, the three-dimensional shape of the first protrusion 104 is conical, and the cross-sectional shape of the first protrusion 104 is triangular.

[0062] In this embodiment of the disclosure, the bottom width R1 of the first protrusion 104 is 3 to 4 μm.

[0063] For example, the bottom width R1 of the first protrusion 104 is 3 μm.

[0064] In this embodiment, the first protrusion 104 is formed to alleviate the stress generated by the graphite carrier under high-temperature conditions. If the bottom width of the first protrusion 104 is small, its volume will be small due to its frustum or cone-shaped structure. A small first protrusion 104, combined with the first silicon carbide coating, cannot effectively alleviate the stress generated by the graphite carrier. If the size of the first protrusion 104 is designed to be too large, the number of first protrusions 104 that can be formed at the bottom of the groove 103 will be limited, which is also detrimental to alleviating the stress generated by the graphite carrier under high-temperature conditions. By using the first protrusion 104 within the aforementioned bottom width range, a sufficient number of first protrusions 104 can be formed in the groove 103, while ensuring that the size of the formed first protrusions 104 is not too large. This effectively alleviates the deformation of the graphite carrier under high-temperature conditions and significantly improves the service life of the graphite carrier.

[0065] In this embodiment of the disclosure, the spacing S1 between the first protrusions 104 is 0.5 to 4 μm.

[0066] For example, the spacing S1 between the first protrusions 104 is 3 μm.

[0067] In this embodiment, a first silicon carbide coating 102 covers the groove 103 between the first protrusions 104. If the spacing between the first protrusions 104 is too large, the width of the first silicon carbide coating between the first protrusions 104 will be large. Since stress reduction is achieved through the silicon carbide coating between the first protrusions 104, if the silicon carbide coating is too large, the number of first protrusions 104 that can be formed in the groove 103 will be small. A small number of first protrusions 104 in the groove 103 will be detrimental to alleviating the stress generated by the graphite carrier under high temperature conditions. If the spacing is too small, the size of the silicon carbide coating between the first protrusions 104 will be small, and the bonding effect with the first protrusions 104 will be poor, which will also be detrimental to alleviating the stress generated by the graphite carrier under high temperature conditions. By using the above spacing, it is possible to ensure that there are enough first protrusions 104 in the groove 103, and that the size of the first silicon carbide coating 102 between the first protrusions 104 is large enough. This allows the first protrusions 104 and the first silicon carbide coating 102 to be combined together to effectively alleviate the deformation of the graphite carrier under high temperature conditions and improve the service life of the graphite carrier.

[0068] In this embodiment of the disclosure, the height H1 of the first protrusion 104 is 1.7-23 μm.

[0069] For example, the height H1 of the first protrusion 104 is 3 μm.

[0070] In this embodiment, a first protrusion 104 with a bottom width decreasing from bottom to top and a first silicon carbide coating 102 covering the first protrusion 104 are used to alleviate the stress generated by the graphite disk under high temperature conditions, preventing the graphite disk from deforming due to stress, thereby improving the service life of the graphite disk. If the height of the first protrusion 104 is too low, the thickness of the part where the first silicon carbide coating 102 and the first protrusion 104 are combined will be low, resulting in the first silicon carbide coating 102 and the first protrusion 104 being unable to effectively alleviate the stress generated by the graphite disk under high temperature conditions, and even less effective in alleviating the deformation of the graphite disk. If the height of the first protrusion 104 is too high, since the first protrusion 104 is formed by etching the graphite disk, a higher height of the first protrusion 104 will result in a higher degree of etching of the graphite disk, which is not conducive to improving the service life of the graphite disk. By employing the first protrusion 104 within the aforementioned height range, it is ensured that the first protrusion 104, after bonding with the first silicon carbide coating 102, can effectively alleviate the stress generated by the graphite carrier disk in a high-temperature environment, thereby mitigating the deformation of the graphite carrier disk. Simultaneously, it also ensures that the formation of the first protrusion 104 causes minimal damage to the graphite carrier disk, thereby extending the service life of the graphite carrier disk.

[0071] In this embodiment of the disclosure, the thickness H2 of the first silicon carbide coating 102 is 100-110 μm.

[0072] For example, the thickness H2 of the first silicon carbide coating 102 is 100 μm.

[0073] In this embodiment, a first silicon carbide coating 102 is used to cover the first protrusion 104 to alleviate the deformation of the graphite carrier disk under high temperature conditions. If the thickness of the first silicon carbide coating 102 is too low, the combined first silicon carbide coating 102 and the first protrusion 104 cannot effectively alleviate the deformation of the graphite carrier disk under high temperature conditions. If the thickness of the first silicon carbide coating 102 is too thin, the first silicon carbide coating 102 will not completely cover the gap between the first protrusions 104. At this time, the bottom of the groove 103 will be uneven, which will affect the subsequent placement of the substrate, and thus cause the substrate to detach from the groove during the growth of the epitaxial layer. If the thickness of the first silicon carbide coating 102 is too high, since the depth of the groove 103 is limited, the first silicon carbide coating 102 will fill the groove 103. The greater the thickness of the first silicon carbide coating 102, the shallower the groove 103 will be. A shallow groove 103 is not conducive to the placement of the substrate, and thus causes the substrate to detach from the groove 103 during the growth of the epitaxial layer.

[0074] In this embodiment of the disclosure, the included angle α between the bottom surface and the side surface of the first protrusion 104 is 30° to 80°.

[0075] For example, the angle α between the bottom surface and the side surface of the first protrusion 104 is 30°.

[0076] In this embodiment, a first protrusion 104 with a bottom width decreasing sequentially from bottom to top and a first silicon carbide coating 102 covering the first protrusion 104 are used to mitigate the deformation of the graphite carrier disk under high-temperature conditions. The first protrusion 104 has a sloped side, which can compensate for the lattice mismatch between the silicon carbide lattice and the graphite lattice, thereby reducing the defect density of the silicon carbide coating. Simultaneously, the sloped side of the first protrusion effectively mitigates the thermal expansion and contraction effect between the graphite lattice and the silicon carbide lattice. Using the aforementioned angled first protrusion effectively reduces the defect density of the silicon carbide coating and also effectively mitigates the deformation of the graphite carrier disk, thus improving the service life of the graphite carrier disk.

[0077] In this embodiment of the disclosure, the side surface of the first protrusion 104 may also be an outwardly convex curved surface.

[0078] In this embodiment, a first silicon carbide coating and a first protrusion have multiple layers of sequentially stacked silicon carbide and graphite lattices. The lattice mismatch between the silicon carbide and graphite lattices can be offset at certain angles (e.g., 30°–80°). A first protrusion with a sloping side is created, and this sloping surface can offset the lattice mismatch between the graphite and silicon carbide lattices that matches the sloping angle. However, if the lattice mismatch between a portion of the sequentially stacked silicon carbide and graphite lattices does not match the sloping angle of the first protrusion, then the sloping surface of the first protrusion cannot effectively reduce the lattice mismatch between the silicon carbide and graphite lattices. If the side of the first protrusion is an outwardly convex curved surface, the angle between the side of the first protrusion and the bottom surface varies at different locations. The side of the first protrusion can offset lattice mismatches that match various sloping angles. Here, lattice mismatch matching the sloping angle means that the first protrusion with that sloping angle can precisely offset the lattice mismatch. For example, if the portion of the silicon carbide lattice extending beyond the graphite lattice is short, a first protrusion with a large angle between its side and bottom surface is needed to compensate for this lattice mismatch. Using a first protrusion with curved sides can simultaneously address different degrees of lattice mismatch, thereby further reducing defects in the silicon carbide coating and extending the lifespan of the graphite carrier.

[0079] Figure 6 A top view of another graphite carrier provided in an embodiment of this disclosure. See also Figure 6 , Figure 6 The graphite carrier disk shown is Figure 4 The difference lies in that the graphite carrier also includes multiple second protrusions 201;

[0080] The plurality of second protrusions 201 are located on the upper surface 105 of the graphite body 101, and the second protrusions 201 are frustum-shaped or cone-shaped structures.

[0081] The first silicon carbide coating 102 also covers the second protrusion 201 and the gap between the second protrusion 201.

[0082] In this embodiment, a plurality of spaced-apart second protrusions 201 are formed on the upper surface 105 of the graphite body. The width of the second protrusions 201 decreases sequentially from bottom to top. Subsequently, a first silicon carbide coating is formed covering the second protrusions 201 and the gaps between the second protrusions 201. In this embodiment, a platform-shaped or cone-shaped first protrusion is used. Since the sides of the second protrusions are inclined, the lattice constant mismatch between silicon carbide and graphite can be canceled at the inclined surfaces during the growth of the first silicon carbide coating (see [link]). Figure 3As shown in the diagram, this reduces the defect density on the surface of the first silicon carbide coating, thus extending the lifespan of the graphite carrier. Simultaneously, because the silicon carbide and graphite lattices are interleaved, the second protrusion helps alleviate the thermal expansion and contraction effect between the graphite and silicon carbide lattices under high-temperature conditions, thereby extending the lifespan of the graphite carrier and preventing deformation. Fabricating the second protrusion further helps alleviate graphite carrier deformation and extend its lifespan.

[0083] In this embodiment of the disclosure, the three-dimensional shape of the second protrusion 201 is a triangular pyramid, and its top view shape is a triangle.

[0084] In other examples, the three-dimensional shape of the second protrusion 201 can also be a square pyramid, a cone, etc., and its top view shape corresponds to a quadrilateral, a circle, etc.

[0085] Figure 7 A cross-sectional view of another graphite carrier provided in an embodiment of this disclosure. See also... Figure 7 , Figure 7 It is along Figure 6 A cross-sectional view of the vertical direction of the dashed line BB'. Figure 7 and Figure 5 The difference is: Figure 7 The second protrusion 201 and a first silicon carbide coating 102 covering the gap between the second protrusion 201 and the second protrusion 201 are also shown.

[0086] The second protrusion 201 has a three-dimensional shape of a triangular pyramid and a cross-sectional shape of a triangle.

[0087] In this embodiment of the disclosure, the shape of the second protrusion 201 is any one of a cone, a frustum, a pyramid, or a truncated pyramid.

[0088] For example, the second protrusion 201 is in the shape of a triangular pyramid.

[0089] In this embodiment, the purpose of forming a second protrusion 201 on the upper surface 105 of the graphite body is to alleviate the deformation of the graphite carrier disk under high temperature conditions. The second protrusion 201 with the above-described shape has an inclined side surface. The inclined surface can effectively reduce the lattice mismatch between silicon carbide and graphite during the growth of the first silicon carbide coating 102, thereby effectively reducing the defect density on the surface of the first silicon carbide coating 102 and thus effectively improving the service life of the graphite carrier disk.

[0090] In this embodiment of the disclosure, the height H3 of the second protrusion 201 is 1.7-23 μm.

[0091] For example, the height of the second protrusion 201 is 4 μm.

[0092] In this embodiment, the second protrusion 201 is formed by etching the upper surface 105 of the graphite body. If the height H3 of the second protrusion 201 is too low, the thickness of the portion where the first silicon carbide coating 102 is bonded to the second protrusion 201 will be relatively low during the subsequent fabrication of the first silicon carbide coating 102 covering the second protrusion 201, which is not conducive to mitigating the deformation caused by the graphite disk under high temperature conditions. If the height H3 of the second protrusion 201 is too high, the etching degree of the upper surface 105 of the graphite body will be too high, resulting in greater damage to the graphite disk and hindering the improvement of the service life of the graphite disk.

[0093] It is worth noting that the height of the second protrusion 201 mentioned above is only an example. In the actual manufacturing process, since the thickness between the upper surface 105 of the graphite body and the lower surface of the graphite carrier is relatively large, the height of the second protrusion 201 can be higher than that of the above-mentioned range.

[0094] In this embodiment of the disclosure, the bottom width R2 of the second protrusion 201 is 3 to 4 μm.

[0095] For example, the bottom width R2 of the second protrusion 201 is 4μm.

[0096] In this embodiment, forming a second protrusion 201 can further alleviate the deformation of the graphite disk under high-temperature conditions. If the bottom diameter of the second protrusion 201 is small, the volume of the second protrusion 201 is small, and a small-volume second protrusion 201 cannot effectively alleviate the deformation of the graphite disk under high-temperature conditions. If the bottom width of the second protrusion 201 is too large, the volume of the second protrusion 201 is too large, resulting in a smaller number of second protrusions 201 that can be formed on the upper surface 105 of the graphite body, which is not conducive to alleviating the deformation of the graphite disk under high-temperature conditions. By using second protrusions 201 within the aforementioned bottom width range, a sufficient number of second protrusions 201 can be formed on the upper surface 105 of the graphite body, and the volume of the formed second protrusions 201 is not too small, which can effectively alleviate the deformation of the graphite disk under high-temperature conditions and improve the service life of the graphite disk.

[0097] In this embodiment of the disclosure, the spacing S2 between the second protrusions 201 is 0.5 to 4 μm.

[0098] For example, the spacing S2 between the second protrusions 201 is 4 μm.

[0099] In this embodiment, the first silicon carbide coating 102 covers the gap between the second protrusions 201. If the gap between the second protrusions 201 is too large, the number of second protrusions 201 that can be formed on the upper surface 105 of the graphite body will be small, which is not conducive to alleviating the deformation of the graphite disk itself under high temperature conditions. If the gap is too small, the volume of the first silicon carbide coating 102 between the second protrusions 201 will be small. After the small volume of the first silicon carbide coating 102 combines with the second protrusions 201, it cannot effectively alleviate the deformation of the graphite disk under high temperature conditions. By adopting the above-mentioned gap, it is possible to ensure that a sufficient number of second protrusions 201 can be formed, and the volume of the first silicon carbide coating 102 between the second protrusions 201 is large enough, thereby effectively alleviating the deformation of the graphite disk under high temperature conditions.

[0100] In this embodiment of the disclosure, the included angle β between the bottom surface and the side surface of the second protrusion 201 is 30° to 80°.

[0101] For example, the included angle β between the bottom surface and the side surface of the second protrusion 201 is 30°.

[0102] In this embodiment, a second protrusion 104 with a bottom width decreasing from bottom to top and a first silicon carbide coating 102 covering the second protrusion 104 are used to mitigate the deformation of the graphite carrier disk under high-temperature conditions. The second protrusion 104 has a sloped side, which can counteract the lattice mismatch between the silicon carbide lattice and the graphite lattice, thereby reducing the defect density of the silicon carbide coating. Simultaneously, the sloped side of the second protrusion effectively mitigates the thermal expansion and contraction effect between the graphite lattice and the silicon carbide lattice. Using the aforementioned angled second protrusion effectively reduces the defect density of the silicon carbide coating and also effectively mitigates the deformation of the graphite carrier disk, thus improving the service life of the graphite carrier disk.

[0103] In this embodiment of the disclosure, the side of the second protrusion may also be an outwardly convex curved surface.

[0104] In this embodiment, a multilayered arrangement of silicon carbide and graphite lattices exists between the first silicon carbide coating and the second protrusion. The lattice mismatch between the silicon carbide and graphite lattices can be offset at certain angles (e.g., 30°–80°). A second protrusion with a sloping side is fabricated, which can offset the lattice mismatch between the graphite and silicon carbide lattices matching the sloping angle. However, if the lattice mismatch between a portion of the multilayered silicon carbide and graphite lattices does not match the sloping angle of the second protrusion, the sloping surface of the second protrusion cannot effectively reduce the lattice mismatch between the silicon carbide and graphite lattices. If the side of the second protrusion is an outwardly convex curved surface, the angle between the side of the second protrusion and the bottom surface varies at different locations. The side of the second protrusion can offset lattice mismatches matching various sloping angles. Matching the lattice mismatch with the sloping angle means that the second protrusion with that sloping angle can precisely offset the lattice mismatch. For example, if the portion of the silicon carbide lattice extending beyond the graphite lattice is short, a second protrusion with a large angle between its side and bottom surface is needed to compensate for this lattice mismatch. Using a second protrusion with curved sides can simultaneously address different degrees of lattice mismatch, thereby further reducing defects in the silicon carbide coating and extending the lifespan of the graphite carrier.

[0105] It is worth noting that other protrusions with shapes inconsistent with the second protrusion 201 can also be made on the upper surface of the graphite carrier disk, and this disclosure does not limit this.

[0106] Figure 8 A top view of another graphite carrier provided in an embodiment of this disclosure. See also Figure 8 , Figure 8 and Figure 6 The difference lies in the following: multiple third protrusions 301; the multiple third protrusions 301 and the multiple first protrusions 104 are distributed in the groove 103 at intervals, the third protrusions 301 are frustum-shaped or cone-shaped structures, and the shapes of the third protrusions 301 and the first protrusions 104 are not consistent; the first silicon carbide coating 102 covers the third protrusions 301.

[0107] In this embodiment of the disclosure, a third protrusion 301 with a different shape than the first protrusion 104 can also be made in the groove. By forming the first protrusion and the third protrusion with different shapes, the deformation of the graphite carrier disk under high temperature conditions can be alleviated.

[0108] Of course, other protrusions of different shapes from the first and third protrusions can also be made in the groove, and this disclosure does not limit this.

[0109] In this embodiment of the disclosure, the three-dimensional shape of the third protrusion 301 is a frustum, and the top view shape is an annular shape.

[0110] In other embodiments, the three-dimensional shape of the third protrusion 301 can be a square pyramid, and the top view shape is a quadrilateral.

[0111] Figure 9 A cross-sectional view of another graphite carrier provided in an embodiment of this disclosure. See also... Figure 9 , Figure 9 It is along Figure 8 The cross-sectional view in the vertical direction of the dashed line CC' in the diagram. Figure 9 and Figure 7 The difference is that the graphite carrier also shows a third protrusion 301.

[0112] The third protrusion 301 has a three-dimensional shape of a frustum and a cross-sectional shape of a trapezoid.

[0113] It is worth noting that the shape of the third protrusion 301 can also be any one of a cone, frustum, pyramid, or truncated cone, as long as the shape of the third protrusion 301 is not the same as the shape of the first protrusion 104.

[0114] In this embodiment of the disclosure, the height H4 of the third protrusion 301 is 1.7-23 μm.

[0115] For example, the height of the third protrusion 301 is 3 μm.

[0116] In this embodiment of the disclosure, the bottom width R3 of the third protrusion 301 is 3 to 4 μm.

[0117] For example, the bottom width R3 of the third protrusion 301 is 3μm.

[0118] In this embodiment of the disclosure, the angle γ between the inclined surface and the bottom surface of the third protrusion 301 is 30° to 80°.

[0119] For example, the angle γ between the inclined surface and the bottom surface of the third protrusion 301 is 40°.

[0120] In this embodiment of the disclosure, the side surface of the third protrusion 301 may also be an outwardly convex curved surface.

[0121] Figure 10 A cross-sectional view of another graphite carrier provided in an embodiment of this disclosure. See also... Figure 10 The cross-sectional view is along Figure 6 Cross-sectional view in the vertical direction of the dashed line BB'. Figure 10 and Figure 7 The difference is that the sides of the first protrusion 104 and the second protrusion 201 are outwardly convex arcs.

[0122] The first protrusion 104 and the second protrusion 201, which are curved surfaces with outward convexity, can more effectively alleviate the deformation of the graphite carrier disk under high temperature conditions.

[0123] Figure 11 A flowchart illustrating a method for fabricating a graphite carrier disk according to an embodiment of this disclosure. See also... Figure 11 The method includes the following steps:

[0124] S81, Provide a graphite body.

[0125] S82. The graphite body is patterned to form multiple spaced grooves, and the bottom of the grooves has multiple spaced first protrusions, which are frustum-shaped or cone-shaped structures.

[0126] S83. A first silicon carbide coating is formed, wherein the first silicon carbide coating is located in the groove and covers the first protrusion and the gap between the first protrusion.

[0127] In this embodiment, multiple spaced-apart first protrusions, shaped as frustums or cones, are formed at the bottom of the grooves of a graphite carrier. A first silicon carbide coating is then formed covering the first protrusions and the gaps between them. Because silicon carbide and graphite have different lattice constants, directly forming the silicon carbide coating on the graphite carrier surface results in a high defect density, which is detrimental to the lifespan of the graphite carrier. In this embodiment, the frustum or cone-shaped first protrusions, with their beveled sides, allow the lattice constant mismatch between silicon carbide and graphite to be offset during the growth of the first silicon carbide coating. This reduces the defect density on the surface of the first silicon carbide coating and improves the lifespan of the graphite carrier. Furthermore, since the silicon carbide and graphite lattices overlap, the first protrusions help mitigate the thermal expansion and contraction effects between the graphite and silicon carbide lattices under high-temperature conditions, thereby improving the lifespan of the graphite carrier and preventing deformation.

[0128] Figure 12 A flowchart illustrating another method for fabricating a graphite carrier disk according to an embodiment of this disclosure. See also... Figure 12 The method includes the following steps:

[0129] S91, Provide a graphite body.

[0130] S92. The graphite body is patterned to form multiple spaced grooves, and the bottom of the grooves has multiple spaced first protrusions, which are frustum-shaped or cone-shaped structures.

[0131] In one example, step S92 may also create a third protrusion located in the groove, the shape of which is different from that of the first protrusion.

[0132] Of course, more protrusions of different shapes can be made at the bottom of the groove, and this disclosure does not limit this.

[0133] S93. The graphite body is patterned to form multiple spaced second protrusions on the upper surface of the graphite body. The second protrusions are frustum-shaped or cone-shaped structures.

[0134] In one example, step S93 may also create a fourth protrusion and a fifth protrusion on the upper surface of the graphite body, wherein the shapes of the second protrusion, the fourth protrusion, and the fifth protrusion are not the same.

[0135] Of course, based on the above, more protrusions of various shapes can be made on the surface of the graphite body.

[0136] S94. A first silicon carbide coating is formed, wherein the first silicon carbide coating covers the first protrusion and the gap between the first protrusion, and the first silicon carbide coating also covers the second protrusion and the gap between the second protrusion.

[0137] Of course, the first silicon carbide coating can also cover the gaps between other protrusions, or cover the surface of the graphite body, and this disclosure does not limit this.

[0138] The above description is merely an optional embodiment of this disclosure and is not intended to limit this disclosure. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this disclosure should be included within the protection scope of this disclosure.

Claims

1. A graphite carrier tray, characterized by, The graphite carrier disc comprises: a graphite body (101) and a first silicon carbide coating (102); the graphite body (101) has a plurality of spaced recesses (103), the bottom of the recesses (103) has a plurality of spaced first protrusions (104), the first protrusions (104) are table or cone structures; the first silicon carbide coating (102) is located in the recesses (103) and covers the first protrusions (104) and the gaps between the first protrusions (104), the upper surface of the first silicon carbide coating (102) is a plane; the graphite carrier disc further comprises a plurality of second protrusions (201); the plurality of second protrusions (201) are located on the upper surface (105) of the graphite body (101), the second protrusions (201) are table or cone structures; the first silicon carbide coating (102) also covers the second protrusions (201) and the gaps between the second protrusions (201); the second protrusions (201) are formed by etching the upper surface (105) of the graphite body, the top of the second protrusions (201) is lower than the upper surface (105) of the graphite body.

2. The graphite tray of claim 1, wherein The bottom width of the first protrusions (104) is 3-4 μm.

3. The graphite tray of claim 1, wherein, The height of the first protrusions (104) is 1.7-23 μm.

4. The graphite tray of claim 1, wherein, The spacing between the first protrusions (104) is 0.5-4 μm.

5. The graphite tray of claim 1, wherein, The included angle between the bottom surface and the side surface of the first protrusions (104) ranges from 30° to 80°.

6. The graphite tray according to any one of claims 1 to 5, wherein The shape of the first protrusions (104) is any one of a cone, a circular truncated cone, a pyramid, or a truncated pyramid.

7. The graphite tray of claim 6, wherein, The side surface of the first protrusions (104) is a convex curved surface.

8. The graphite tray according to any one of claims 1 to 5, wherein The thickness of the first silicon carbide coating (102) is 100-110 μm.

9. A method for manufacturing a graphite carrier disk, characterized in that, The method comprises: providing a graphite body; graphically processing the graphite body to form a plurality of spaced recesses, the bottom of the recesses having a plurality of spaced first protrusions, the first protrusions being table or cone structures; etching the upper surface of the graphite body to form a plurality of second protrusions, the second protrusions being table or cone structures, the top of the second protrusions being lower than the upper surface of the graphite body; making a first silicon carbide coating, the first silicon carbide coating being located in the recesses and covering the first protrusions and the gaps between the first protrusions, the upper surface of the first silicon carbide coating being a plane, the first silicon carbide coating covering the second protrusions and the gaps between the second protrusions.

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