Sputtering device

Abstract

The sputtering device of the present application has a cathode unit that emits sputtering particles toward a processing surface of a substrate to be deposited. The cathode unit has a target, a magnet unit, a magnet scanning portion, and an auxiliary magnet. The auxiliary magnet tilts the magnetic flux lines formed by the magnet located at the first swing end toward the second swing end along the magnet located at the first swing end.

Description

Technical Field

[0001] This invention relates to sputtering apparatus, and more particularly to techniques suitable for film formation with magnetron cathodes.

[0002] This application claims priority under Japanese Patent Application No. 2021-192171, filed on November 26, 2021, the contents of which are incorporated herein by reference. Background Technology

[0003] In film deposition apparatuses with magnetron cathodes, it is known to move the magnet relative to the target in order to improve target utilization efficiency, etc.

[0004] In addition, as disclosed in Patent Document 1, it is also known that in order to improve the uniformity of the film formed by the film-forming method, in addition to moving the magnet, the cathode and the target are oscillated relative to the substrate to which the film is formed.

[0005] In addition, as disclosed in Patent Document 2, it is known that magnets and cathodes are oscillated in order to prevent the generated particles from adversely affecting the film formation in the sputtering chamber.

[0006] Furthermore, as a technique for oscillating the substrate to which the film is formed relative to the magnet and the cathode, the applicant has disclosed a technique as described in Patent Document 3.

[0007] Patent Document 1: Japanese Patent Application Publication No. 2009-41115

[0008] Patent Document 2: Japanese Patent Application Publication No. 2012-158835

[0009] Patent Document 3: Japanese Patent No. 6579726

[0010] However, even with techniques that involve scanning (oscillating) the magnet relative to the target as described above, non-eroded areas can still occur. These non-eroded areas, near the periphery of the film-forming area close to the oscillating region of the magnet, sometimes contribute to particle generation. There is a demand to eliminate the formation of these non-eroded areas. In particular, it has been found that, compared to the formation of non-eroded areas, the blurred boundary between the non-eroded and eroded areas can lead to problematic particle generation, such as resputtering of redeposited films (reattached films, sputtered films attached to the target).

[0011] Furthermore, in techniques that involve scanning (oscillating) a magnet relative to a target to create a non-eroded region, issues arise near the periphery of the film deposition area close to the magnet's oscillation region, including reduced film thickness and potentially uneven film thickness and quality distribution. These problems remain unresolved. Moreover, with the increasing size of substrates, the demand for improvement in these defects grows. Summary of the Invention

[0012] The present invention was made in view of the above circumstances, and it aims to achieve the following objectives.

[0013] 1. Suppress the generation of blurred areas around non-erosion-generating areas to reduce the causes of particle formation.

[0014] 2. To stabilize the plasma distribution and improve the uniformity of film thickness distribution and film thickness characteristics distribution regardless of the oscillation position of the magnet.

[0015] Through in-depth research, the inventors of this application have successfully suppressed particle generation caused by non-erosion areas and suppressed deviations in film thickness distribution and film quality characteristics distribution.

[0016] During sputtering, an applied electric current generates a magnetic field (magnetic field lines) using a magnet. The sputtered plasma or electrons then move along these magnetic field lines. Within these magnetic field lines, the line contributing to plasma generation forms an arc from the N pole (north pole) of the magnet, which is parallel to the target and positioned in the same plane, towards the S pole. The magnetic field lines then penetrate the target from the N pole along its thickness direction, from the back side to the front side, forming an arc within the plasma generation space, and then return to the S pole from the front side to the back side along its thickness direction.

[0017] A portion with an anode and ground potential is arranged around the end of the target. In this state, when the magnet is scanned (swung) and positioned near the swing end, the magnet is located close to the anode.

[0018] Therefore, near the oscillating end of the magnet, sometimes the magnetic field lines generated from the N pole tend to move towards the anode, which is closer to the field lines, instead of returning to the S pole. As a result, because electrons are tracked (moving) along the magnetic field lines, they cannot return to the plasma formation space and contribute to plasma formation; instead, they flow towards the anode. This phenomenon is called electron absorption.

[0019] When electrons are absorbed by the anode, the electron density in the plasma generation space on the front side of the target decreases. This can sometimes result in a reduced plasma density or even no plasma generation at all. This phenomenon is called plasma absorption. In cases where this occurs, the target is not sputtered by plasma, thus sometimes creating a non-eroded region, which in turn becomes larger.

[0020] Here, when electrons are absorbed by the anode, the oscillation of the magnet and other factors cause the plasma near the anode to switch on and off. This results in the on and off of sputtering caused by the plasma. Consequently, the possibility of particle generation due to sputtering of the redeposited film increases.

[0021] In other words, due to the formation of non-erosion areas, particles can sometimes be generated near the periphery of the film-forming area close to the oscillating area of ​​the magnet.

[0022] At this point, the boundary between the non-eroded area and the eroded area becomes unclear, forming an erosion-non-erosion boundary region.

[0023] Thus, it can be seen that, compared to the formation of non-eroded areas, the blurred boundary between non-eroded and eroded areas becomes a cause of problematic particle generation, such as the resputtering of redeposited films.

[0024] As described above, when electrons are absorbed by the anode, the magnetic field lines from the magnet are oriented towards the anode, that is, they are tilted outward from the target's profile than the thickness direction of the target.

[0025] Therefore, the inventors of this application discovered that, in order to solve this problem, the amount of absorbed electrons can be reduced by making the magnetic field lines generated by the magnet at the swing end of the magnet not point towards the anode. That is, the inventors of this application discovered that if the magnetic field lines generated by the magnet at one end of the swing end of the magnet are inclined more towards the other end of the swing end of the magnet compared to the thickness direction of the target, that is, inclined more towards the inside of the target's contour compared to the thickness direction of the target, the non-eroded area will be effectively reduced.

[0026] Furthermore, in the above description, magnetic field lines are marked from the N pole to the S pole according to the usual notation, but even with opposite polarities, there is no obstacle to understanding the phenomenon.

[0027] Furthermore, in the case of non-erosion regions, plasma generation is suppressed. Therefore, the applied power supply is not consumed in plasma generation and becomes excessive. This excess power is either redistributed to regions different from the original non-erosion regions or absorbed as an overall voltage (power) fluctuation. Thus, plasma generation conditions vary like voltage fluctuations, resulting in increased deviations in film thickness distribution and film quality characteristic distribution.

[0028] In other words, when electrons are absorbed by the anode, the deviation in film thickness distribution and the deviation in film quality distribution are amplified due to the generation of non-erosion areas.

[0029] Furthermore, even when non-erosion regions are generated, variations in plasma generation conditions, such as voltage fluctuations, can sometimes lead to the creation of non-erosion regions that differ from the original ones. In such cases, the generation of particles, as well as deviations in film thickness distribution and film quality characteristics, increase.

[0030] Therefore, the inventors of this application discovered that, in order to solve this problem, the amount of absorbed electrons can be reduced by ensuring that the magnetic field lines generated by the magnet at one end of the magnet's swinging end are not directed towards the anode. In other words, the inventors of this application discovered that if the magnetic field lines generated by the magnet at one end of the magnet's swinging end are tilted more towards the other end of the magnet's swinging end compared to the thickness direction of the target, that is, tilted more towards the inner contour of the target compared to the thickness direction of the target, then deviations in film thickness distribution and film quality distribution can be effectively suppressed.

[0031] In view of these, the inventors of this application have completed the present invention as follows.

[0032] One aspect of the sputtering apparatus of the present invention includes a cathode unit for ejecting sputtered particles toward a surface to be treated of a substrate. The cathode unit has a target for which an etched region is formed, a magnet unit, a magnet scanning unit, and an auxiliary magnet. The magnet unit has a plurality of magnets disposed on a side opposite to the target and for forming the etched region on the target. The magnet scanning unit enables the magnet unit and the substrate to reciprocate relative to each other between a first oscillating end and a second oscillating end in an oscillation direction along the surface to be treated of the substrate. The auxiliary magnet is used to tilt the magnetic field lines formed by the magnet located at the first oscillating end toward the second oscillating end along the magnet located at the first oscillating end of the plurality of magnets, wherein the plurality of magnets extend along the surface to be treated of the substrate in an intersecting direction that intersects the oscillation direction.

[0033] In a sputtering apparatus according to one aspect of the present invention, the auxiliary magnet may be disposed along the magnet located at the first oscillating end on the opposite side to the second oscillating end relative to the first oscillating end, and the auxiliary magnet may oscillate integrally with the magnet.

[0034] In one aspect of the sputtering apparatus, the auxiliary magnet may have the same polarity as the magnet located at the first oscillating end.

[0035] In one aspect of the sputtering apparatus of the present invention, the magnetic intensity of the auxiliary magnet may be equal to or less than the magnetic intensity of the magnet located at the first oscillating end.

[0036] In one aspect of the sputtering apparatus, the auxiliary magnet may have a protrusion extending along the magnet toward the target.

[0037] In one aspect of the sputtering apparatus of the present invention, the auxiliary magnet may be disposed on the side opposite to the substrate being processed relative to the target and mounted on a magnetic yoke forming a magnetic circuit.

[0038] In a sputtering apparatus according to one aspect of the present invention, the cathode unit may have: a flat magnetic yoke having a central region on its surface composed of a magnetic material; an auxiliary magnetic yoke adjacent to the magnetic yoke; a central magnet portion arranged linearly in the central region of the magnetic yoke; a peripheral magnet portion arranged surrounding the central magnet portion; a parallel region where the central magnet portion and the peripheral magnet portion are parallel to each other; a magnetic circuit disposed on the surface of the magnetic yoke; and a back plate overlapping the magnetic circuit. The plurality of magnets constituting the magnetic unit are all disposed on the magnetic yoke, the auxiliary magnet is arranged parallel to the peripheral magnet portion, and the auxiliary magnet is fixed to the magnetic yoke by means of the auxiliary magnetic yoke, the auxiliary magnetic yoke being composed of a magnetic material or a dielectric material.

[0039] In one aspect of the sputtering apparatus of the present invention, the auxiliary yoke and the auxiliary magnet can be detached from the yoke.

[0040] In a sputtering apparatus according to one aspect of the present invention, the magnet located at the first swing end among the plurality of magnets has a plurality of magnetic field generating regions divided in the cross direction. Each magnetic field generating region has a dividing yoke, a dividing peripheral magnet portion, a dividing central magnet portion, and a dividing auxiliary magnet. The positions of each of the magnetic field generating regions can be adjusted in the cross direction and in the thickness direction of the yoke. The magnet having the plurality of magnetic field generating regions with adjusted positions can be swung by the magnet scanning unit.

[0041] One aspect of the sputtering apparatus of the present invention includes a cathode unit for ejecting sputtered particles toward a surface to be treated of a substrate. The cathode unit has a target for which an etched region is formed, a magnet unit, a magnet scanning unit, and an auxiliary magnet. The magnet unit has a plurality of magnets disposed on a side opposite to the target and for forming the etched region on the target. The magnet scanning unit enables the magnet unit and the substrate to reciprocate relative to each other between a first oscillating end and a second oscillating end in an oscillation direction along the surface to be treated of the substrate. The auxiliary magnet is used to tilt the magnetic field lines formed by the magnet located at the first oscillating end toward the second oscillating end along the magnet located at the first oscillating end of the plurality of magnets, wherein the plurality of magnets extend along the surface to be treated of the substrate in an intersecting direction that intersects the oscillation direction.

[0042] Therefore, the magnetic field lines formed by the magnet located at the first oscillating end among multiple magnets can be tilted using the magnetic field generated by the auxiliary magnet. This reduces the amount of electrons absorbed by the anode. Consequently, the phenomenon of plasma absorption and reduced plasma density can be suppressed. This effectively reduces the erosion-non-erosion boundary region and decreases particle generation caused by its formation.

[0043] At the same time, it can suppress fluctuations in the supply voltage, suppress fluctuations in plasma density under different magnet swing positions, stabilize the plasma generation state, and effectively suppress deviations in film thickness distribution and film quality distribution.

[0044] In a sputtering apparatus according to one aspect of the present invention, the auxiliary magnet may be disposed along the magnet located at the first oscillating end on the opposite side to the second oscillating end relative to the first oscillating end, and the auxiliary magnet may oscillate integrally with the magnet.

[0045] Therefore, regardless of the magnet's oscillation position, the reduction of magnetic field lines from the magnet can be suppressed. The plasma generation state is stable, suppressing the formation of erosion-non-erosion boundary regions. Particle generation can be suppressed, as well as deviations in film thickness distribution and film quality characteristic distribution.

[0046] In one aspect of the sputtering apparatus, the auxiliary magnet may have the same polarity as the magnet located at the first oscillating end.

[0047] Therefore, the magnetic field lines from the auxiliary magnet repel the magnetic field lines from the magnet that generates plasma. This allows the magnet to tilt in a predetermined direction while maintaining the necessary magnetic strength (magnetic flux density). Consequently, the formation of erosion-non-erosion boundary regions can be suppressed without causing a decrease in plasma density. Particle generation can be suppressed, as can deviations in film thickness distribution and film quality characteristic distribution.

[0048] In one aspect of the sputtering apparatus of the present invention, the magnetic intensity of the auxiliary magnet may be equal to or less than the magnetic intensity of the magnet located at the first oscillating end.

[0049] Therefore, the magnetic field lines from the plasma-generating magnet are prevented from tilting excessively due to the magnetic field lines from the auxiliary magnet, and instead tilt at a predetermined angle. This prevents unnecessary reduction in plasma density, avoids the formation of excessive non-erosion boundary regions, and suppresses the formation of erosion-non-erosion boundary regions. It also suppresses particle generation and deviations in film thickness distribution and film quality characteristic distribution.

[0050] In one aspect of the sputtering apparatus, the auxiliary magnet may have a protrusion extending along the magnet toward the target.

[0051] Therefore, the magnetic field lines of the auxiliary magnet can be concentrated from the protrusions. This prevents the magnetic field lines of the auxiliary magnet from dispersing and effectively tilts the magnetic field lines from the plasma-generating magnet. Consequently, the auxiliary magnet can be miniaturized and made lighter, allowing the magnet and auxiliary magnet to oscillate without placing unnecessary burden on the magnet scanning section. This prevents a decrease in plasma density, avoids the formation of excessive non-erosion boundary regions, and suppresses the formation of erosion-non-erosion boundary regions. It also suppresses particle generation and deviations in film thickness distribution and film quality distribution.

[0052] In one aspect of the sputtering apparatus of the present invention, the auxiliary magnet may be disposed on the side opposite to the substrate being processed relative to the target and mounted on a magnetic yoke forming a magnetic circuit.

[0053] Therefore, the auxiliary magnet can oscillate together with the main magnet. Furthermore, regardless of the oscillation position, the tilt of the magnetic field lines relative to the magnet located at the first oscillation end can be kept constant by the auxiliary magnet. Additionally, the magnetic force of the auxiliary magnet is introduced into the magnetic circuit of the magnet formed together with the yoke, thereby enabling more efficient plasma generation.

[0054] In a sputtering apparatus according to one aspect of the present invention, the cathode unit may have: a flat magnetic yoke having a central region on its surface composed of a magnetic material; an auxiliary magnetic yoke adjacent to the magnetic yoke; a central magnet portion arranged linearly in the central region of the magnetic yoke; peripheral magnet portions arranged surrounding the central magnet portion; a parallel region where the central magnet portion and the peripheral magnet portions are parallel to each other; a magnetic circuit disposed on the surface of the magnetic yoke; and a back plate overlapping the magnetic circuit. The plurality of magnets constituting the magnetic unit are all disposed on the magnetic yoke, the auxiliary magnet is arranged parallel to the peripheral magnet portion, and the auxiliary magnet is fixed to the magnetic yoke by means of the auxiliary magnetic yoke, which is composed of a magnetic material or a dielectric material.

[0055] Therefore, the magnetic pole surfaces of the peripheral magnets are arranged along a surface parallel to the substrate to which the film is formed. The magnetic field lines formed by the peripheral magnets located at the first swing end in the swing direction, which are further away from the second swing end than the direction orthogonal to the magnetic pole surfaces, are inclined at least towards the second swing end than the direction orthogonal to the magnetic pole surfaces. Therefore, even when the magnets are in the swing position closest to the anode, the amount of electrons absorbed by the anode can be reduced. This prevents a decrease in plasma density at the periphery in the swing direction, thereby suppressing the formation of erosion-non-erosion boundary regions without generating excess non-erosion boundary regions. It also suppresses particle generation and deviations in film thickness distribution and film quality distribution.

[0056] In one aspect of the sputtering apparatus of the present invention, the auxiliary yoke and the auxiliary magnet can be detached from the yoke.

[0057] Therefore, when processing is performed in a sputtering apparatus under different processing conditions, it is necessary to form magnetic field lines that meet those conditions. This requires different tilt angles of the magnetic field lines from the magnet at the oscillating end. In this case, the settings can be easily changed by replacing the auxiliary magnet.

[0058] In a sputtering apparatus according to one aspect of the present invention, the magnet located at the first swing end among the plurality of magnets may have a plurality of magnetic field generating regions divided in the cross direction. Each magnetic field generating region has a dividing yoke, a dividing peripheral magnet portion, a dividing central magnet portion, and a dividing auxiliary magnet. The positions of each of the magnetic field generating regions can be adjusted in the cross direction and the thickness direction of the yoke. The magnet having the plurality of magnetic field generating regions with adjusted positions can be swung by the magnet scanning unit.

[0059] To control the film formation state over the entire film-forming region, conditions related to plasma generation magnetic flux density are sometimes adjusted, for example, in the cross direction and the thickness direction of the yoke. According to this structure, multiple magnetic field generation regions are segmented, and the positions of the cross direction and the thickness direction of the yoke for each of the multiple magnetic field generation regions can be adjusted. Therefore, the conditions for magnetic flux density can be adjusted in each of the multiple magnetic field generation regions.

[0060] By adjusting each of the multiple magnetic field generating regions in the cross direction and the thickness direction of the yoke, in each of the multiple magnetic field generating regions, the magnetic field lines of the peripheral magnets in the magnet located at the first swing end can be tilted in the desired direction by dividing the auxiliary magnet. In each of the multiple magnetic field generating regions, the state in which the magnetic field lines are tilted in the desired direction can be maintained.

[0061] The sputtering apparatus according to one aspect of the present invention can maintain the required magnetic flux density and plasma density. Furthermore, it can suppress the formation of fuzzy regions around non-erosion areas, achieve particle reduction, and stabilize the resulting plasma distribution. It can achieve the effect of improving the uniformity of film thickness distribution and thickness characteristic distribution regardless of the swing position of the magnet. Attached Figure Description

[0062] Figure 1 This is a schematic top view illustrating the sputtering apparatus according to an embodiment of the present invention.

[0063] Figure 2 This is a perspective view showing the cathode unit in the sputtering apparatus according to an embodiment of the present invention.

[0064] Figure 3 This is a schematic diagram illustrating the positional relationship between the glass substrate and the cathode device structure in the sputtering apparatus according to an embodiment of the present invention.

[0065] Figure 4 This is a front view showing the positional relationship between the glass substrate, target, and magnet unit in the sputtering apparatus according to an embodiment of the present invention.

[0066] Figure 5 This is a view showing the end of the magnet unit of the sputtering apparatus according to an embodiment of the present invention, and an enlarged front view showing the structure of the magnet and auxiliary magnet constituting the magnet unit.

[0067] Figure 6 This is a view showing the end of the magnet unit of the sputtering apparatus according to an embodiment of the present invention, and an enlarged cross-sectional view showing the structure of the magnet and auxiliary magnet constituting the magnet unit.

[0068] Figure 7 This is a schematic diagram illustrating the non-eroded area, eroded area, and boundary area in the target of the sputtering apparatus according to an embodiment of the present invention.

[0069] Figure 8 This is a schematic diagram illustrating the electron tracking state of the sputtering apparatus according to an embodiment of the present invention without an auxiliary magnet.

[0070] Figure 9 This is a schematic diagram showing the direction of magnetic field lines in the case where there is no auxiliary magnet in the sputtering apparatus according to the embodiments of the present invention.

[0071] Figure 10 This is a schematic diagram illustrating the electronic tracking state in the sputtering apparatus according to an embodiment of the present invention.

[0072] Figure 11This is a schematic diagram showing the direction of magnetic field lines in a sputtering apparatus according to an embodiment of the present invention.

[0073] Figure 12 This is a graph showing the voltage change relative to the swing position in the sputtering apparatus according to the embodiments of the present invention.

[0074] Figure 13 This is a graph illustrating an example of the film thickness distribution of the sputtering apparatus according to an embodiment of the present invention.

[0075] Figure 14 This is a graph illustrating an example of the film resistance distribution of the sputtering apparatus according to an embodiment of the present invention.

[0076] Figure 15 This is a graph representing an example of the film thickness distribution in a sputtering apparatus.

[0077] Figure 16 This is a graph representing an example of the film resistance distribution in a sputtering apparatus.

[0078] Figure 17 This is a graph representing an example of the film thickness distribution in a sputtering apparatus.

[0079] Figure 18 This is a graph representing an example of the film resistance distribution in a sputtering apparatus.

[0080] Figure 19 This is a graph representing an example of the film thickness distribution in a sputtering apparatus.

[0081] Figure 20 This is a graph representing an example of the film resistance distribution in a sputtering apparatus.

[0082] Figure 21 This is a graph showing the relationship between film thickness distribution and film resistance distribution in the sputtering apparatus of the present invention.

[0083] Figure 22 This is an image of the front of the target after processing, in the case of using an auxiliary magnet in the sputtering apparatus according to the present invention.

[0084] Figure 23 This is a graph showing the relationship between the configuration of auxiliary magnets and plasma density in the sputtering apparatus involved in this invention.

[0085] Figure 24 This is a graph showing the relationship between the configuration of auxiliary magnets and plasma density in the sputtering apparatus involved in this invention.

[0086] Figure 25 This is a graph showing the relationship between the configuration of auxiliary magnets and plasma density in the sputtering apparatus involved in this invention.

[0087] Figure 26 This is a graph showing the relationship between the configuration of auxiliary magnets and plasma density in the sputtering apparatus involved in this invention.

[0088] Figure 27 This is an enlarged cross-sectional view showing a modified example of the auxiliary magnet of the sputtering apparatus according to an embodiment of the present invention.

[0089] Figure 28 This is an image showing the front view of the target corner after processing in the sputtering apparatus according to the present invention, when an auxiliary magnet is used.

[0090] Figure 29 It is a frontal image of the target corner after processing in a sputtering apparatus without the use of auxiliary magnets. Detailed Implementation

[0091] The sputtering apparatus and sputtering method according to embodiments of the present invention will be described below based on the accompanying drawings.

[0092] Figure 1 This is a schematic top view showing the sputtering apparatus according to this embodiment. Figure 1 In the figure, reference numeral 1 indicates the sputtering device.

[0093] <Sputtering Device 1>

[0094] The sputtering apparatus 1 described in this embodiment is an example of a reciprocating (interback) vacuum processing apparatus. Such vacuum processing apparatuses are used, for example, in semiconductor device manufacturing processes, and in the manufacturing processes of flat panel displays (FPDs) such as liquid crystal displays and organic EL displays. Specifically, in such a vacuum processing apparatus, when forming thin film transistors (TFTs) on a substrate made of glass or the like, the substrate to be processed, made of glass or resin, is subjected to heat treatment, film formation treatment, etching treatment, etc., in a vacuum environment.

[0095] In this embodiment, the glass substrate 11 (film-forming substrate, transparent substrate) can be a substrate with a side length of about 100 mm or a rectangular substrate with a side length of 2000 mm or more. Furthermore, substrates with a thickness of less than 1 mm, substrates with a thickness of a few millimeters, or substrates with a thickness of 10 mm or more can also be used as the glass substrate 11.

[0096] like Figure 1As shown, the sputtering apparatus 1 includes a loading and unloading chamber 2 (vacuum chamber), a film formation chamber 4 (vacuum chamber), and a transport chamber 3. The loading and unloading chamber 2 is used to move a generally rectangular glass substrate 11 from the outside into the loading and unloading chamber 2, or from the loading and unloading chamber 2 to the outside. In the film formation chamber 4, a film, such as a transparent conductive film based on ZnO or In2O3, a metal or oxide film such as aluminum or silver, or other films, is formed on the glass substrate 11 by sputtering. The film formation chamber 4 is pressure resistant. The transport chamber 3 is located between the film formation chamber 4 and the loading and unloading chamber 2.

[0097] As the sputtering apparatus 1 involved in this embodiment, Figure 1 This indicates a side-sputtering sputtering device. A downward-sputtering sputtering device or an upward-sputtering sputtering device can also be used as sputtering device 1.

[0098] In addition to the above-described structure, the sputtering apparatus 1 also includes a film deposition chamber 4A (vacuum chamber) and a loading and unloading chamber 2a (vacuum chamber). The aforementioned multiple vacuum chambers 2, 2a, 4, and 4A are arranged to surround the transport chamber 3. The sputtering apparatus 1 equipped with such vacuum chambers is configured, for example, to have two adjacent loading and unloading chambers (vacuum chambers) and multiple processing chambers (vacuum chambers). For example, one of the loading and unloading chambers 2 and 2a is a loading chamber that loads the glass substrate 11 into the interior of the sputtering apparatus 1 (vacuum processing apparatus) from the outside. The other of the loading and unloading chambers 2 and 2a is an unloading chamber that removes the glass substrate 11 from the inside of the sputtering apparatus 1 to the outside. Furthermore, the film deposition chambers 4 and 4A may employ structures that perform different film deposition processes.

[0099] Separating valves can be formed between each of the vacuum chambers 2, 2a, 4, 4A and the transport chamber 3.

[0100] The loading and unloading chamber 2 may also be equipped with a positioning component capable of setting and aligning the placement position of the glass substrate 11 that is moved from outside the sputtering apparatus 1 into the chamber. In addition, the loading and unloading chamber 2 is provided with a rough evacuation and exhaust device (rough evacuation and exhaust device, low vacuum exhaust device) such as a rotary pump for rough evacuation of the interior of the loading and unloading chamber 2.

[0101] like Figure 1 As shown, a handling device 3a (handling robot) is arranged inside the handling chamber 3. In the following description, it is sometimes referred to as the handling robot 3a.

[0102] The transport device 3a has a rotating shaft, a robotic arm mounted on the rotating shaft, a robotic hand formed at one end of the robotic arm, and a undulating device for undulating the robotic hand. The robotic arm consists of a first active arm, a second active arm, a first driven arm, and a second driven arm that can be bent relative to each other. The transport device 3a enables the glass substrate 11, which is the object being transported, to move between the respective vacuum chambers 2, 2a, 4, 4A and the transport chamber 3.

[0103] like Figure 1 As shown, a cathode device 10, a substrate holding section 13 serving as a substrate holder including a mask, a gas introduction device, and a high-vacuum exhaust device are provided in the film formation chamber 4.

[0104] like Figure 1 As shown, the interior of the film-forming chamber 4 is composed of a front space 41 exposed on the front side of the glass substrate 11 during film formation and a back space 42 located on the back side of the glass substrate 11. A cathode device 10 is disposed in the front space 41.

[0105] Inside the film-forming chamber 4, the cathode device 10 is erected at the position furthest from the transport port 4a connected to the transport chamber 3.

[0106] like Figure 1 As shown, the substrate holding part 13 (substrate holding device) is disposed inside the back space 42.

[0107] The substrate holding part 13 can support the glass substrate 11 that is moved in from the transport port 4a.

[0108] The substrate holding section 13 holds the glass substrate 11 such that the target 23 (described later in the film formation process) is opposite to the processed surface 11a (film formation surface) of the glass substrate 11. During the film formation process, the substrate holding section 13 holds the glass substrate 11 at a position corresponding to the film formation opening 4b.

[0109] The substrate holding portion 13 may also include a swing shaft and a holding portion. The swing shaft extends substantially parallel to at least one of the transport port 4a and the film-forming port 4b, for example, at a position below the back side space 42. The holding portion is mounted on the swing shaft and is used to hold the back side of the glass substrate 11.

[0110] The gas introduction device is used to introduce gas into the interior of the film-forming chamber 4. The high-vacuum exhaust device is a turbomolecular pump, etc., that depressurizes the interior of the film-forming chamber 4 to a high-vacuum state.

[0111] <Cathode Device 10>

[0112] Figure 2 This is a perspective view showing the cathode device 10 of the sputtering apparatus 1 according to this embodiment. Figure 3This is a schematic diagram showing the positional relationship between the glass substrate and the cathode device structure in the sputtering apparatus according to this embodiment.

[0113] exist Figures 2-6 and Figures 8-11 In this context, an XYZ orthogonal coordinate system is used.

[0114] The Z-direction is the vertical direction (direction of gravity). Additionally, the Z-direction is the longitudinal direction of the glass substrate 11. The Y-direction is the thickness direction of the glass substrate 11. Additionally, the Y-direction is the thickness direction of the magnetic yoke.

[0115] The X direction is the width direction of the glass substrate 11. In the following description, the surface parallel to both the Z and X directions is sometimes referred to as the ZX plane.

[0116] Furthermore, the X direction is equivalent to the swing direction. In this case, the Z direction, which intersects the X direction, is equivalent to the intersection direction, which intersects the swing direction.

[0117] The cathode device 10 enables the glass substrate 11, which is disposed in the film-forming position (plasma processing position) inside the film-forming chamber 4, to swing in the X direction.

[0118] The cathode device 10 includes a cathode box 10A and a cathode unit 22. For example... Figure 2 As shown, the cathode unit 22 is disposed in the cathode box 10A.

[0119] In addition, Figure 2 The diagram shows a vertical cathode device 10 in which the glass substrate 11 and the target 23 are upright in the vertical direction. As the cathode device 10, a bottom deposition type cathode device can also be used. In a bottom deposition type cathode device, the glass substrate 11 is positioned below the target 23 with the glass substrate 11 facing the horizontal direction. In this state, a film is formed on the glass substrate 11. Here, the horizontal direction is the direction parallel to the X and Y directions.

[0120] <Cathode Unit 22>

[0121] like Figure 3 As shown, the cathode unit 22 is arranged along the ZX plane opposite to the front side of the glass substrate 11.

[0122] The cathode unit 22 is configured to sputter particles toward the surface 11a of the glass substrate 11. In the cathode unit 22, in the direction from the glass substrate 11 toward the magnet scanning section 29 (and... Figure 3 On the opposite direction of the Y direction shown, a target 23, a back plate 24, and a magnet unit MU (magnetic circuit) are arranged in sequence. The magnet scanning unit 29 will be described later.

[0123] <Target 23>

[0124] Figure 4 This is a front view showing the positional relationship between the glass substrate, target, and magnet unit in the sputtering apparatus according to this embodiment.

[0125] The target 23 is formed as a flat plate opposite to the glass substrate 11 and parallel to the ZX plane. The target 23 is arranged opposite to the glass substrate 11. In other words, as... Figure 3 As shown, the target 23 has a front surface 23a opposite to the glass substrate 11. Figure 2 As shown, the target 23 is exposed on the surface of the cathode box 10A at a position opposite to the glass substrate 11.

[0126] like Figure 3 and Figure 4 As shown, the target 23 is wider than the glass substrate 11 in the Z direction. Additionally, the target 23 is wider than the glass substrate 11 in the X direction. An anode 28 is disposed around the target 23. The anode 28 covers a back plate 24, which protrudes further outward from the ends of the target 23 in both the X and Z directions. In other words, in the Y direction, the anode 28 is disposed between the glass substrate 11 and the back plate 24. The anode 28 is disposed around the entire circumference of the target 23 in both the X and Z directions.

[0127] <Backplate 24>

[0128] The back plate 24 is formed as a flat plate facing the glass substrate 11 and along the ZX plane. The back plate 24 is joined to the side of the target 23 that is not facing the glass substrate 11, that is, the side opposite to the front surface 23a of the target 23. The back plate 24 is connected to a control unit 26 having a DC power supply. DC power supplied from the DC power supply is supplied to the target 23 through the back plate 24. As the power supply for the cathode, an AC power supply, a pulse power supply, or an RF power supply can also be used instead of a DC power supply. The target 23 is arranged along the ZX plane facing the processed surface 11a of the glass substrate 11 in the cathode unit 22.

[0129] <Magnetic Unit MU>

[0130] The cathode unit 22 has a magnet unit MU. The magnet unit MU consists of a plurality of magnets 25 and two auxiliary magnets 27. The magnet unit MU is disposed on the side opposite to the target 23, relative to the back plate 24. In other words, the glass substrate 11 is disposed on the front side of the target 23, and the magnet unit MU is disposed on the back side of the target 23.

[0131] The magnet unit MU is a multi-linked magnet. In the magnet unit MU, multiple magnets 25 are arranged parallel to each other and at equal intervals in the X direction. The multiple magnets 25 are vertically arranged along the Z direction, so that the length direction of each of the multiple magnets 25 is parallel to the Z direction.

[0132] In the magnet unit MU of this embodiment, for example, nine magnets 25 are arranged along the X direction. Specifically, the magnet unit MU has a first magnet 25F, a second magnet 25S, a third magnet 25T, a fourth magnet 25Y, a fifth magnet 25G, a sixth magnet 25R, a seventh magnet 25V, an eighth magnet 25E, and a ninth magnet 25N.

[0133] In this embodiment, there are nine magnets 25. The number of magnets 25 can be set according to the area of ​​the glass substrate 11, the area of ​​the target 23, or the swing area of ​​the magnets 25 (described later). In other words, the magnet unit MU has N magnets 25 (N is an integer greater than or equal to 2). In this case, the magnets for which the auxiliary magnets 27 are installed among the multiple magnets 25 are the (N-1)th magnet and the Nth magnet.

[0134] Furthermore, in the cathode unit 22 of this embodiment, the target 23 is fixed relative to the glass substrate 11. The cathode unit 22 is fixed in the film-forming chamber 4.

[0135] Each of the nine magnets 25 forms a magnetron magnetic field on the front surface 23a of the target 23 opposite to the glass substrate 11. Each of the nine magnets 25 is independently connected to the control unit 26. The control unit 26 can control the magnetic field state generated by each of the nine magnets 25.

[0136] <Magnetic field generation regions MG1, MG2, MG3>

[0137] Each of the nine magnets 25 has three magnetic field generating regions arranged in the Z direction: a first magnetic field generating region MG1, multiple second magnetic field generating regions MG2, and a third magnetic field generating region MG3. The first magnetic field generating region MG1 is one region in the Z direction. The third magnetic field generating region MG3 is another region in the Z direction. The multiple second magnetic field generating regions MG2 are the regions between the first magnetic field generating region MG1 and the third magnetic field generating region MG3. In this embodiment, the number of multiple second magnetic field generating regions MG2 is five. The number of multiple second magnetic field generating regions MG2 is not limited to this embodiment; it can be less than five or more than six.

[0138] These multiple magnetic field generating regions MG1, MG2, and MG3 can be connected continuously in the Z direction or divided in the Z direction. In this embodiment, the structure when multiple magnetic field generating regions MG1, MG2, and MG3 are connected will be described.

[0139] Figure 5 This is an enlarged front view showing the end of the magnet unit MU of the sputtering apparatus according to this embodiment. Figure 6This is an enlarged cross-sectional view showing the end of the magnet unit MU of the sputtering apparatus according to this embodiment. Additionally, Figure 5 and Figure 6 These all represent the structure of the magnets and auxiliary magnets that constitute the magnet unit MU. Figure 5 The diagram shows a first magnet 25F, a second magnet 25S, and an auxiliary magnet 27. Figure 5 The first magnet 25F and the auxiliary magnet 27 are shown. Figure 5 The middle shows Figure 4 The first magnetic field generating region MG1 and the second magnetic field generating region MG2 are shown.

[0140] In the following description, the auxiliary magnet provided on the first magnet 25F will be described, and the description of the auxiliary magnet provided on the ninth magnet 25N will sometimes be omitted.

[0141] When describing the common structure of the first magnet 25F to the ninth magnet 25N, the first magnet 25F to the ninth magnet 25N are sometimes simply referred to as magnet 25.

[0142] like Figures 4-6 As shown, the first magnet 25F to the ninth magnet 25N each have a yoke 31, an auxiliary yoke 31d, a peripheral magnet part 32 and a central magnet part 33.

[0143] <Magnetic yoke 31 and auxiliary magnetic yoke 31d>

[0144] The magnetic yoke 31 is a roughly rectangular flat magnetic base (magnetic body) when viewed from the Y direction. The magnetic yoke 31 has a central region 31C on its front side 31S.

[0145] The auxiliary magnetic yoke 31d is the part adjacent to the magnetic yoke 31. The auxiliary magnetic yoke 31d is made of magnetic material or dielectric material.

[0146] The multiple magnets 25 constituting the magnet unit MU are all arranged on the yoke 31.

[0147] <Peripheral magnet section 32 and central magnet section 33>

[0148] The peripheral magnet portion 32 is separated from the central magnet portion 33 on the plane of the yoke 31. The peripheral magnet portion 32 is a generally elongated oval ring magnet arranged around the central magnet portion 33.

[0149] The central magnet portion 33 is a composite magnet with a straight shape. The length direction of the composite magnet corresponds to the Z direction. The central magnet portion 33 is disposed at the central position 31CP in the X direction of the central region 31C of the magnetic yoke 31.

[0150] The central magnet 33 and the peripheral magnets 32 form a magnetic circuit on the front side 31S of the magnetic yoke 31. This magnetic circuit is arranged to overlap with the back plate 24.

[0151] In the central portion MR along the Z direction, which is the length direction of magnet 25, the central magnet portion 33 and the peripheral magnet portion 32 are parallel to each other. The region where the central magnet portion 33 and the peripheral magnet portion 32 are parallel to each other is the parallel region PR.

[0152] The central magnet section 33 is divided into multiple magnets along the Z-direction in which it extends. In other words, the central magnet section 33 is composed of multiple divided magnets. The multiple divided magnets are arranged continuously in the Z-direction, thereby forming the central magnet section 33.

[0153] Similarly, the peripheral magnet section 32 is divided into multiple magnets in the Z direction along which it extends. In other words, the peripheral magnet section 32 is composed of multiple divided magnets. The multiple divided magnets are arranged continuously in the Z direction, thereby forming the peripheral magnet section 32.

[0154] Furthermore, such as Figure 5 and Figure 6 As shown, the peripheral magnet portion 32 has an end peripheral magnet portion 32a located at its end in the Z direction. The end peripheral magnet portion 32a extends in the X direction. Additionally, the peripheral magnet portion 32 has a first peripheral magnet portion 32b. The first peripheral magnet portion 32b is adjacent to the end peripheral magnet portion 32a in the Z direction. The first peripheral magnet portion 32b extends in the Z direction, which is the length direction.

[0155] The peripheral magnet portion 32a may also have a portion extending in the Z direction at a position adjacent to the first peripheral magnet portion 32b. In other words, as... Figure 5 As shown, the peripheral magnet portion 32a at one end of the magnet 25 in the Z direction may also have a generally C-shaped form. Additionally, the peripheral magnet portion 32a at the other end of the magnet 25 in the Z direction may also have a generally inverted C-shaped form.

[0156] The peripheral magnet portion 32 has a second peripheral magnet portion 32c extending in the Z direction. The second peripheral magnet portion 32c is adjacent to the first peripheral magnet portion 32b in the length direction. The second peripheral magnet portion 32c is located on the opposite side of the end peripheral magnet portion 32a in the Z direction relative to the first peripheral magnet portion 32b.

[0157] The peripheral magnet portion 32 has a third peripheral magnet portion 32d extending in the Z direction. The third peripheral magnet portion 32d is adjacent to the second peripheral magnet portion 32c in the length direction. The third peripheral magnet portion 32d is located on the opposite side of the first peripheral magnet portion 32b in the Z direction relative to the second peripheral magnet portion 32c.

[0158] The peripheral magnet portion 32 has a fourth peripheral magnet portion 32e extending in the Z direction. The fourth peripheral magnet portion 32e is adjacent to the third peripheral magnet portion 32d in the length direction. The fourth peripheral magnet portion 32e is located on the opposite side of the second peripheral magnet portion 32c in the Z direction relative to the third peripheral magnet portion 32d.

[0159] The peripheral magnet portion 32 has a fifth peripheral magnet portion 32f extending in the Z direction. The fifth peripheral magnet portion 32f is adjacent to the fourth peripheral magnet portion 32e in the length direction. The fifth peripheral magnet portion 32f is located on the opposite side of the third peripheral magnet portion 32d in the Z direction relative to the fourth peripheral magnet portion 32e.

[0160] Furthermore, the peripheral magnet portion 32 has a segmented portion extending in the Z direction (see reference). Figure 4 The segmented portion is adjacent to the fifth peripheral magnet portion 32f. The segmented portion of the peripheral magnet portion 32 is located in the parallel region PR.

[0161] In the peripheral magnet section 32, the end peripheral magnet section 32a, the first peripheral magnet section 32b, the second peripheral magnet section 32c, the third peripheral magnet section 32d, and the fourth peripheral magnet section 32e are all permanent magnets.

[0162] In the peripheral magnet section 32, the end peripheral magnet section 32a, the first peripheral magnet section 32b, the second peripheral magnet section 32c, the third peripheral magnet section 32d, and the fourth peripheral magnet section 32e can all be configured to independently generate different magnetic fields, or they can be configured to generate magnetic fields of equal strength.

[0163] In the peripheral magnet section 32, the fifth peripheral magnet section 32f and the segmented portion extending further from the fifth peripheral magnet section 32f in the Z direction are permanent magnets.

[0164] like Figure 5 and Figure 6 As shown, the central magnet portion 33 has a first coil portion 35b. The first coil portion 35b is located at the end in the Z direction, which is the length direction. The first coil portion 35b is adjacent to the end peripheral magnet portion 32a in the Z direction. The first coil portion 35b is made of coiled... Figure 5 The coil is composed of a coil wire wound around an axis perpendicular to the plane of the paper, i.e., parallel to the Y-direction. Specifically, the first coil portion 35b has a first core portion 34b parallel to the Y-direction and is composed of a coil wire wound around the first core portion 34b. The first core portion 34b is located at the center of the coil.

[0165] The first core portion 34b is a permanent magnet. The first coil portion 35b is positioned in the Z direction aligned with the first peripheral magnet portion 32b. The center of the first core portion 34b is positioned in the Z direction approximately at the same position as the center of the first peripheral magnet portion 32b. The first coil portion 35b does not contact the end peripheral magnet portion 32a or the first peripheral magnet portion 32b.

[0166] The central magnet portion 33 has a second coil portion 35c adjacent to the first coil portion 35b. The second coil portion 35c is located in the Z-direction on the side opposite to the end peripheral magnet portion 32a, relative to the first coil portion 35b. The second coil portion 35c has a second core portion 34c located at its center. The second core portion 34c is a permanent magnet. The second coil portion 35c is positioned in the Z-direction aligned with the second peripheral magnet portion 32c. The center of the second core portion 34c is positioned in the Z-direction approximately at the same location as the center of the second peripheral magnet portion 32c. The second coil portion 35c does not contact the first coil portion 35b or the second peripheral magnet portion 32c.

[0167] The central magnet portion 33 has a third coil portion 35d adjacent to the second coil portion 35c. The third coil portion 35d is located on the opposite side of the first coil portion 35b in the Z direction relative to the second coil portion 35c. The third coil portion 35d has a third core portion 34d located at its center. The third core portion 34d is a permanent magnet. The third coil portion 35d is positioned in the Z direction aligned with the third peripheral magnet portion 32d. The center of the third core portion 34d is positioned in the Z direction approximately at the same location as the center of the third peripheral magnet portion 32d. The third coil portion 35d does not contact the second coil portion 35c or the third peripheral magnet portion 32d.

[0168] The central magnet portion 33 has a fourth coil portion 35e adjacent to the third coil portion 35d. The fourth coil portion 35e is located on the opposite side of the second coil portion 35c in the Z-direction relative to the third coil portion 35d. The fourth coil portion 35e has a fourth core portion 34e located at its center. The fourth core portion 34e is a permanent magnet. The fourth coil portion 35e is positioned in the Z-direction aligned with the fourth peripheral magnet portion 32e. The center of the fourth core portion 34e is positioned in the Z-direction approximately at the same location as the center of the fourth peripheral magnet portion 32e. The fourth coil portion 35e does not contact the third coil portion 35d or the fourth peripheral magnet portion 32e.

[0169] The central magnet portion 33 has a fifth magnet portion 37 adjacent to the fourth coil portion 35e. The fifth magnet portion 37 is located on the opposite side of the third coil portion 35d in the Z direction relative to the fourth coil portion 35e. The fifth magnet portion 37 is a permanent magnet. The fifth magnet portion 37 is positioned in the Z direction aligned with the fifth peripheral magnet portion 32f. The fifth magnet portion 37 and the fifth peripheral magnet portion 32f are arranged substantially parallel to each other. Figure 5 As shown, the fifth magnet portion 37 is positioned in the X direction at approximately the same location as the first core portions 34b to 34e. In other words, the first core portions 34b to 34e and the fifth magnet portion 37 are arranged along the Z direction. The fifth magnet portion 37 has approximately the same length in the Z direction as the fifth peripheral magnet portion 32f. The fifth magnet portion 37 does not contact the fourth coil portion 35e or the fifth peripheral magnet portion 32f.

[0170] Furthermore, the central magnet portion 33 has a segmented portion extending in the Z direction. The segmented portion is adjacent to the fifth magnet portion 37. The segmented portion of the central magnet portion 33 is located in the parallel region PR.

[0171] In the central magnet section 33, the first coil section 35b, the second coil section 35c, the third coil section 35d, and the fourth coil section 35e are all connected to the control section 26 (see reference) which has a power supply function. Figure 3 (Connection). That is, the control unit 26 functions as a power supply.

[0172] In the central magnet section 33, the first coil section 35b, the second coil section 35c, the third coil section 35d, and the fourth coil section 35e are each supplied with current independently. As a result, the first coil section 35b, the second coil section 35c, the third coil section 35d, and the fourth coil section 35e can generate mutually different magnetic fields.

[0173] Furthermore, the central magnet portion 33 has a long core portion 36 extending in the Z direction.

[0174] In the central magnet section 33, the first core section 34b, the second core section 34c, the third core section 34d, and the fourth core section 34e each have an end located in the Y direction on the side opposite to the yoke 31. These four ends are adjacent to the long core section 36. The long core section 36 is positioned in approximately the same X direction as the fifth magnet section 37. In other words, the long core section 36 and the fifth magnet section 37 are arranged in the Z direction. The long core section 36 is a permanent magnet or a magnetic material.

[0175] In the central magnet section 33, the long core section 36 and the end peripheral magnet sections 32a, 32b, 32c, 32d, and 32e of the peripheral magnet section 32 form a magnetic circuit.

[0176] In the central magnet section 33, the first coil section 35b to the fourth coil section 35e are all configured to be supplied with current independently. As a result, the magnetic field strength and the distribution of the generated magnetic field in the magnetic circuit formed by the long core section 36 and the peripheral magnet section 32 can be adjusted.

[0177] Furthermore, in the example above, the first coil portion 35b to the fourth coil portion 35e constituting the central magnet portion 33 are electromagnets, but the structure of the central magnet portion 33 is not limited to electromagnets. A permanent magnet corresponding to the long core portion 36 can also be used as the central magnet portion 33. Figure 5 This indicates one end of magnet 25 in the Z direction, but the other end of magnet 25 may also have the same structure as one end of magnet 25 described above.

[0178] <Magnet Scanning Section 29>

[0179] The cathode device 10 includes a magnet scanning unit 29. The magnet scanning unit 29 moves the magnet unit MU in a swing direction, which is a scanning direction. The swing direction is the X direction, which is orthogonal to the Z direction on which the plurality of magnet units MU are vertically arranged. That is, the magnet scanning unit 29 can make the magnet unit MU and the glass substrate 11 reciprocate relative to each other.

[0180] The magnet scanning unit 29 changes the position of the magnet unit MU relative to the target 23. The magnet scanning unit 29 can make the magnet unit MU swing without changing the relative positional relationship of the multiple magnets 25 constituting the magnet unit MU.

[0181] That is, the magnet unit MU can move (oscillate) relative to the target 23 in a manner parallel to the particle emission surface of the target 23 via the magnet scanning unit 29.

[0182] The magnet scanning unit 29 may be composed of, for example, a track, rollers, and multiple motors. The track extends in the scanning direction. Rollers are mounted on each of the two ends of the cathode unit 22 in the X direction. The motors cause each roller to rotate. The magnet scanning unit 29 may also be composed of an LM guide or the like having a track extending in the scanning direction.

[0183] The track of the magnet scanning unit 29 has a width in the scanning direction (X direction) that is the same as or larger than that of the target 23. Furthermore, the structure of the magnet scanning unit 29 is not limited to the above-described structure, as long as it allows the multiple magnets 25 to move integrally in the scanning direction. Structures other than those having a track, rollers, and motor can also be applied to the magnet scanning unit 29.

[0184] <Auxiliary Magnet 27>

[0185] like Figure 4As shown, two auxiliary magnets 27 are disposed at both ends of the magnet unit MU in the X direction. In other words, one auxiliary magnet 27 (first auxiliary magnet) is disposed at one end (first end) of the magnet unit MU in the X direction, and another auxiliary magnet 27 (second auxiliary magnet) is disposed at the other end (second end) of the magnet unit MU in the X direction.

[0186] The auxiliary magnet 27 is positioned on the side opposite to the glass substrate 11 relative to the target 23. In each of the first magnet 25F and the ninth magnet 25N, the auxiliary magnet 27 is mounted and fixed to the magnetic yoke 31 that forms the magnetic circuit.

[0187] Furthermore, in this embodiment, the magnet unit MU is composed of an arrangement of nine magnets 25. A first magnet 25F is disposed at one end (first end, first arrangement end) in the X direction of the magnet unit MU. A ninth magnet 25N is disposed at the other end (second end, second arrangement end) in the X direction of the magnet unit MU.

[0188] In this structure, an auxiliary magnet 27 is disposed at the end (outer edge) of the first magnet 25F on the side opposite to the second magnet 25S in the X direction. Another auxiliary magnet 27 is disposed at the end (outer edge) of the ninth magnet 25N on the side opposite to the eighth magnet 25E in the X direction.

[0189] In other words, one auxiliary magnet 27 is located on the swing end of one end of the magnet unit MU in the X direction. Additionally, another auxiliary magnet 27 is located on the swing end of the other end of the magnet unit MU in the X direction. That is, the auxiliary magnet 27 is disposed on the outer edge of the magnet located at the first swing end of the magnet unit MU in the X direction and on the outer edge of the magnet located at the second swing end.

[0190] That is, the auxiliary magnet 27 has the function of tilting the magnetic field lines formed by the magnet 25 located at the first swing end towards the second swing end along the magnet 25 located at the first swing end. The auxiliary magnet 27 is arranged on the side opposite to the second swing end relative to the first swing end, along the magnet 25 located at the first swing end.

[0191] like Figures 4-6 As shown, the auxiliary magnet 27 is a linear magnet parallel to the peripheral magnet portion 32. The auxiliary magnet 27 extends in the Z direction. The auxiliary magnet 27 has the same polarity as the peripheral magnet portion 32 closest to it. That is, as... Figure 6 As shown, if the peripheral magnet part 32 is the N pole, then the polarity of the auxiliary magnet 27 is the same as that of the peripheral magnet part 32, that is, it is the N pole.

[0192] The auxiliary magnet 27 is located at the outermost ends of both ends of the magnet unit MU in the X direction. That is, the auxiliary magnet 27 is arranged adjacent to the outermost peripheral magnet portion 32 of the first magnet 25F in the X direction. In addition, the auxiliary magnet 27 is arranged adjacent to the outermost peripheral magnet portion 32 of the ninth magnet 25N in the X direction. In other words, the auxiliary magnet 27 is not provided on the second magnet 25S to the eighth magnet 25E.

[0193] That is, the auxiliary magnet 27 is only set in the X direction at the position corresponding to the end of the target 23.

[0194] The auxiliary magnet 27 has the same length as the peripheral magnet portion 32 closest to it. That is, the Z-direction dimension of the auxiliary magnet 27 is approximately equal to the Z-direction dimensions of the first magnet 25F and the ninth magnet 25N located at opposite ends of the magnet unit MU in the X-direction. Here, the Z-direction dimension of the auxiliary magnet 27 is approximately ±5 mm relative to the Z-direction dimensions of the first magnet 25F and the ninth magnet 25N.

[0195] The auxiliary magnet 27, like the peripheral magnet portion 32 closest to it, is a magnet with a rectangular shape when viewed in cross-section. The auxiliary magnet 27 has the same cross-sectional shape as the peripheral magnet portion 32 along its entire length in the Z direction. The auxiliary magnet 27 is extremely close to the peripheral magnet portion 32 closest to it in the X direction. Specifically, as... Figure 6 As shown, the auxiliary magnet 27 can be extremely close to the peripheral magnet portion 32 closest to the auxiliary magnet 27 in the X direction, or as described later, it can be separated by a predetermined distance in the X direction.

[0196] The auxiliary magnet 27 has a protrusion 27a. In this embodiment, the protrusion 27a is a continuous portion in the Z direction that protrudes toward the target 23 relative to the ZX plane formed by the end face 30 (pole plane) of the peripheral magnet portion 32 of the magnet 25. In other words, the protrusion 27a extends in the Z direction and protrudes from the ZX plane toward the Y direction. In the following description, the end face 30 is sometimes referred to as the pole plane 30.

[0197] Furthermore, the tip of the protrusion 27a may protrude further toward the target 23 than the magnetic pole plane 30. The tip of the protrusion 27a may also be located at the same position as the magnetic pole plane 30 in the Y direction. The tip of the protrusion 27a may also be farther away from the target 23 than the magnetic pole plane 30.

[0198] The auxiliary magnet 27 is tilted relative to the magnetic pole plane 30. That is, as... Figure 6As shown, the end face of the auxiliary magnet 27, which serves as a magnetic pole, can be tilted relative to the ZX plane at an angle θ. Here, angle θ is the angle of tilt relative to the Y direction, which is the normal to the front face 23a of the target 23. In other words, the auxiliary magnet 27 rotates about an axis parallel to the Z direction at an angle θ. This angle θ can also be called the "magnet tilt angle".

[0199] A more specific explanation of the "magnet tilt angle" is provided.

[0200] The auxiliary magnet 27 has a first magnetic pole surface 27F and a second magnetic pole surface 27S located on the side opposite to the first magnetic pole surface 27F. The first magnetic pole surface 27F faces the back plate 24. In other words, the first magnetic pole surface 27F is exposed in the space SP between the back plate 24 and the magnet 25. The second magnetic pole surface 27S is the surface that contacts the auxiliary magnetic yoke 31d, which will be described later.

[0201] The central position of the first magnetic pole surface 27F, that is, the central position between the first corner C1 and the second corner C2, is indicated by reference numeral 27Q. The central position of the second magnetic pole surface 27S, that is, the central position between the third corner C3 and the fourth corner C4, is indicated by reference numeral 27R.

[0202] In the auxiliary magnet 27, the line perpendicular to the first magnetic pole surface 27F and the second magnetic pole surface 27S and passing through the central positions 27Q and 27R is the magnet tilt line 27D. In other words, the line passing through the central position 27R and perpendicular to the second magnetic pole surface 27S is the magnet tilt line 27D. The angle θ between the magnet tilt line 27D and the Y direction, which is the normal to the front surface 23a of the target 23, is the magnet tilt angle. The magnet tilt line 27D, extending from the second magnetic pole surface 27S towards the first magnetic pole surface 27F, faces the swing region SW of the magnet 25. The angle θ is in the range of 0 degrees to 90 degrees, more preferably in the range of 0 degrees to 60 degrees, further in the range of 0 degrees to 45 degrees, and in the range of 0 degrees to 30 degrees.

[0203] <Modified example of auxiliary magnet 27>

[0204] Figure 27 This shows a modified example of auxiliary magnet 27.

[0205] Figure 27 The auxiliary magnet 27 shown has a pentagonal shape when viewed in cross-section. The auxiliary magnet 27 has a first magnetic pole face 27F and a second magnetic pole face 27S. The first magnetic pole face 27F has a vertex. The first magnetic pole face 27F has two surfaces. The vertex connecting the two surfaces corresponds to the central position 27Q. The second magnetic pole face 27S has a central position 27R. A protrusion 27a is formed on the central position 27Q of the first magnetic pole face 27F of the auxiliary magnet 27. The protrusion 27a has a convex shape.

[0206] exist Figure 27In the auxiliary magnet 27 shown, the line perpendicular to the second magnetic pole surface 27S and passing through the central positions 27Q and 27R is the magnet tilt line 27D. The angle θ between the magnet tilt line 27D and the Y direction, which is the normal to the front surface 23a of the target 23, is the magnet tilt angle. The magnet tilt line 27D, extending from the second magnetic pole surface 27S towards the first magnetic pole surface 27F, faces the swing region SW of the magnet 25.

[0207] The magnetic intensity of the auxiliary magnet 27 is equal to or less than the magnetic intensity of the peripheral magnet portion 32 closest to the auxiliary magnet 27. Specifically, the magnetic intensity of the auxiliary magnet 27 can be in the range of 1 / 2 to 3 / 4, or 1 / 2 to 1 / 3, of the magnetic intensity of the peripheral magnet portion 32 closest to the auxiliary magnet 27. The magnetic intensity of the peripheral magnet portion 32 can be 1 to 1.5 times, or 1.1 to 1.4 times, for example, about 1.39 times, of the magnetic intensity of the auxiliary magnet 27.

[0208] like Figure 6 As shown, the auxiliary magnet 27 is fixed to the yoke 31 by means of an auxiliary yoke 31d. The auxiliary yoke 31d is adjacent to the end of the yoke 31 in the X direction. The auxiliary yoke 31d may also be integrally formed with the yoke 31. In this case, the auxiliary yoke 31d is formed of the same material as the yoke 31. The auxiliary yoke 31d is made of a magnetic body or a dielectric body. The auxiliary yoke 31d and the auxiliary magnet 27 can be detached from the yoke 31.

[0209] The auxiliary magnet 27 is fixed to the auxiliary yoke 31d by the fixing member 27g to obtain the aforementioned angle θ. Thus, the second magnetic pole surface 27S of the auxiliary magnet 27 abuts against the auxiliary yoke 31d. This results in a magnetic circuit formed by the central magnet portion 33, the peripheral magnet portion 32, and the yoke 31, combined with the magnetic circuit formed by the auxiliary magnet 27 and the auxiliary yoke 31d.

[0210] In the cathode unit 22 of this embodiment, as Figure 3 and Figure 4 As shown, sputtered particles are emitted from the target and form a film on the glass substrate 11. At this time, the magnet scanning unit 29 causes the magnet unit MU to reciprocate between the swing end_reverse side and the swing end_forward side. Here, in this embodiment, the swing end_forward side is an example of a "first swing end". The swing end_reverse side is an example of a "second swing end". Furthermore, when the swing end_forward side is the "second swing end", the swing end_reverse side is the "first swing end".

[0211] In the cathode unit 22, the magnet scanning unit 29 moves the magnet unit MU together, which is a multi-linked magnet composed of multiple magnets 25. Specifically, as Figure 3As shown, the magnet scanning unit 29 first moves the magnet unit MU from the center position (center side) in the swing direction (X direction) to the right, then to the swing end (positive side). Next, the magnet scanning unit 29 moves the magnet unit MU from the swing end (positive side) to the left, passing through the center position (center side), then to the swing end (negative side). Finally, the magnet scanning unit 29 moves the magnet unit MU from the swing end (negative side) to the center position (center side). This series of movements completes one scan. This scan is repeated multiple times in the cathode unit 22.

[0212] Simultaneously, for the first magnet 25F to the ninth magnet 25N constituting the magnet unit MU, current is applied from the control unit 26, which functions as a power source, to the first coil portion 35b, the second coil portion 35c, the third coil portion 35d, and the fourth coil portion 35e at the Z-direction end of the central magnet portion 33. As a result, the magnet 25 generates a magnetic field. At this time, a magnetic circuit is formed by the central magnet portion 33, the peripheral magnet portion 32, and the yoke 31. Furthermore, in the first magnet 25F and the ninth magnet 25N, the magnetic circuit is also formed by the auxiliary magnet 27 and the auxiliary yoke 31d.

[0213] Next, the film formation performed on the glass substrate 11 in the sputtering apparatus 1 according to this embodiment will be described.

[0214] First, the glass substrate 11 is moved from the outside to the inside of the sputtering apparatus 1. Next, the glass substrate 11 is placed on a positioning member inside the loading and unloading chamber 2. Thus, the glass substrate 11 is aligned in a predetermined position on the positioning member (see reference 1). Figure 1 ).

[0215] Next, the glass substrate 11, placed on the positioning component in the loading and unloading chamber 2, is supported by the robotic arm of the transport device 3a. The glass substrate 11 is then removed from the loading and unloading chamber 2. Then, the glass substrate 11 is transported to the film-forming chamber 4 via the transport chamber 3.

[0216] At this time, in the film-forming chamber 4, the swing shaft of the substrate holding part 13 is rotated by the drive unit, and the substrate holding part 13 is positioned in a horizontal mounting position. Furthermore, by the lifting pin moving part (not shown), the lifting pin is positioned in a ready position protruding upward from the substrate holding part 13.

[0217] In this state, the glass substrate 11 that has reached the membrane chamber 4 is inserted into the upper side of the substrate holding part 13 by the transport device 3a.

[0218] Next, the robotic arm of the transport device 3a approaches the substrate holding part 13, and with the glass substrate 11 aligned with a predetermined position within the surface of the substrate holding part 13, the glass substrate 11 is placed on the lifting pin. Then, the arm of the transport robot 3a retracts towards the transport chamber 3. Next, the lifting pin descends, and the glass substrate 11 is supported on the substrate holding part 13.

[0219] Next, the swing shaft rotates, and the glass substrate 11, held by the substrate holding part 13, is upright in a vertical processing position. As a result, the film-forming port 4b is almost completely closed by the glass substrate 11, and the glass substrate 11 is held in the film-forming position. In this state, plasma is generated between the front surface 23a of the target 23 and the glass substrate 11 by the magnetic field generated by the magnet unit MU. The target 23 is sputtered, and the material constituting the target 23 adheres to the front surface of the glass substrate 11. Thus, a film-forming process is performed on the glass substrate 11.

[0220] When the film-forming process is finished, the swing shaft rotates, so that the glass substrate 11 reaches the horizontal placement position while being held by the substrate holding part 13.

[0221] The glass substrate 11, after the film-forming process is completed, is taken out of the film-forming chamber 4 via the transport device 3a. Then, the glass substrate 11 is taken out of the loading and unloading chamber 2 via the transport chamber 3.

[0222] The function of the auxiliary magnet 27 in this embodiment will be explained below.

[0223] Figure 7 This is a schematic diagram of the front of the target used to illustrate the function of the auxiliary magnet 27. Figure 8 This diagram illustrates the function of the auxiliary magnet 27 and is a schematic diagram showing the electron tracking state without the auxiliary magnet 27. Figure 9 This diagram illustrates the function of the auxiliary magnet 27 and shows the direction of magnetic field lines without the auxiliary magnet 27. First, the case without the auxiliary magnet 27 will be explained.

[0224] As described above, plasma is generated between the front surface 23a of the target 23 and the glass substrate 11 by the magnetic field formed by the magnet unit MU having a plurality of magnets 25. In this state, a film is formed on the front surface of the glass substrate 11 by forming the sputtering conditions described later.

[0225] Here, during the sputtering process, such as Figure 9 As shown, magnetic field lines are formed from the peripheral magnet section 32 of the N pole to the central magnet section 33 of the S pole. A magnetic circuit is formed by the central magnet section 33, the peripheral magnet section 32, and the magnetic yoke 31.

[0226] Therefore, as Figure 8As shown, electrons are set into trajectories along magnetic field lines.

[0227] At this time, within the swing area SW of target 23, at the position of the swing end, such as... Figure 9 As shown, the magnetic field lines generated by the peripheral magnet portion 32 of the N pole extend towards the anode 28 of the magnet 25. On the front surface 23a of the target 23, the magnetic field line density decreases. That is, as... Figure 8 As shown, the tracked electron density becomes insufficient, and the plasma density becomes insufficient. The result is, as... Figure 7 As shown, no erosion area will be formed on the front side 23a of the target 23, and non-erosion areas E1 will be formed at both ends in the X direction.

[0228] Magnetic field lines from the peripheral magnet section 32 of the N pole, in Figure 9 In the middle, as it faces the Y direction, it tilts to the left in the X direction and faces the anode 28.

[0229] Furthermore, magnetic field lines are formed from the peripheral magnet portion 32 of the N pole to the central magnet portion 33 of the S pole. Through these magnetic field lines, electrons rotate around the central magnet portion 33 surrounded by the peripheral magnet portion 32 in the front surface 23a of the target 23. At this time, near the end of the electron movement direction along the length of the magnet 25, that is, the electrons moving in the Z direction along the central magnet portion 33, their movement speed slows down and their density increases in the vicinity of the region where they bend in the X direction along the end peripheral magnet portion 32a.

[0230] As a result, the electron density decreases at the location where electrons bend from the peripheral magnet portion 32a along the peripheral magnet portion 32 from the X direction to the Z direction. Consequently, erosion on the front surface 23a of the target 23 decreases, forming a non-erosion region E2. This phenomenon cancels out in adjacent magnets 25 because the direction of electrons surrounding the central magnet portion 33 becomes opposite. Therefore, this is observed in the two magnets 25 at both ends in the X direction. Moreover, in each magnet 25 located at both ends of the magnet unit MU in the X direction, the location where the non-erosion region E2 is formed is on the opposite side in the Z direction.

[0231] As a result, without the auxiliary magnet 27, such as Figure 7 As shown, two diagonally opposite locations at the four corners of target 23 form non-erosion regions E2. Figure 7In the middle, non-erosion regions are formed near the lower left and upper right corners. Furthermore, if non-erosion regions E1 and E2 are formed in this way, non-erosion region E3 is also easily formed, in addition to the two diagonally opposite locations. When non-erosion regions are formed, the applied power supply is not consumed in plasma generation and remains. This remaining power is either redistributed to regions different from the two diagonally opposite non-erosion regions, or absorbed as a whole voltage (power) fluctuation. Therefore, it is believed that plasma generation conditions will change in a manner similar to voltage fluctuations.

[0232] Figure 10 This diagram illustrates the function of the auxiliary magnet 27 and is a schematic diagram showing the electron tracking state with the auxiliary magnet 27 present. Figure 11 This diagram illustrates the function of the auxiliary magnet 27 and is a schematic diagram showing the direction of magnetic field lines when the auxiliary magnet 27 is present.

[0233] Next, the case with auxiliary magnet 27 will be explained.

[0234] Here, during the sputtering process, such as Figure 11 As shown, magnetic field lines are formed from the peripheral magnet section 32 of the N pole to the central magnet section 33 of the S pole. At this time, in addition to the central magnet section 33, the peripheral magnet section 32 and the magnetic yoke 31, an auxiliary magnet 27 and an auxiliary magnetic yoke 31d are also included to form a magnetic circuit.

[0235] Therefore, as Figure 10 As shown, electrons are tracked along magnetic field lines.

[0236] At this time, within the swinging area of ​​target 23, at the position of the swinging end, such as... Figure 11 As shown, the magnetic field lines from the peripheral magnet 32 ​​of the N pole are inclined to the right in the Y direction or X direction orthogonal to the magnetic pole plane 30, through the magnetic field lines from the auxiliary magnet 27, without facing the anode 28.

[0237] Therefore, no decrease in magnetic field density will occur on the front surface 23a of target 23. That is, as... Figure 10 As shown, the tracked electron density is sufficiently maintained, and the plasma density is also sufficiently maintained. As a result, in Figure 7 On the front 23a of the target 23 shown, non-erosion regions E1 formed on each magnet 25 located at both ends of the magnet unit MU in the X direction can be suppressed.

[0238] Furthermore, in the structure including the auxiliary magnet 27, a magnetic circuit is formed including a central magnet portion 33, a peripheral magnet portion 32, a yoke 31, the auxiliary magnet 27, and the auxiliary yoke 31d. Therefore, through the magnetic field lines from the peripheral magnet portion 32 at the N pole towards the central magnet portion 33 at the S pole, electrons surround the central magnet portion 33, which is enclosed by the peripheral magnet portion 32, on the front surface 23a of the target 23. At the end of the electron movement direction along the length of the magnet 25, electrons moving in the Z direction along the central magnet portion 33 bend in the X direction along the end peripheral magnet portion 32a, but the electron movement speed does not slow down, thus suppressing the increase in density.

[0239] As a result, no density reduction occurs at the location where electrons bend from the peripheral magnet portion 32a along the peripheral magnet portion 32 from the X direction to the Z direction. Consequently, in the two magnets 25 located at both ends of the magnet unit MU in the X direction, the formation of the non-erosion region E2 on the front surface 23a of the target 23 is as follows: Figure 22 As shown, this is suppressed. That is, in the two magnets 25 located at both ends of the magnet unit MU in the X direction, since the auxiliary magnet 27 is adjacent to them, the formation of two diagonally opposite non-erosion regions E2 can be suppressed. Therefore, if voltage fluctuations are suppressed and the formation of non-erosion regions E1 and E2 is suppressed, the phenomenon that non-erosion regions E3 are easily formed outside of the two diagonally opposite locations can be suppressed.

[0240] According to the sputtering apparatus 1 of this embodiment, the auxiliary magnet 27 prevents the magnetic field lines generated by the magnet 25 at the oscillating end of the magnet 25 from pointing towards the anode 28. This reduces the amount of electrons absorbed by the anode 28. In other words, it allows the magnetic field lines generated from the magnet 25 to be oriented towards the Y direction, or to be oriented further towards the Y direction than towards the Y direction. Figure 10 The magnetic field lines are tilted to the right, meaning they are tilted further inwards from the target's contour compared to the target's thickness direction. This allows for a reduction in the non-erosion regions E1, E2, and E3.

[0241] In other words, by reducing the generation of non-eroded regions E1, E2, and E3, particle generation can be suppressed. That is, the formation of erosion-non-erosion boundary regions, which are the cause of particle generation due to the indistinct boundary between non-eroded and eroded regions, is reduced.

[0242] Furthermore, by suppressing the generation of non-erosion regions E1 to E3, the supplied power is not redistributed, thereby suppressing some changes in plasma generation conditions caused by voltage fluctuations, and suppressing particle generation, as well as deviations in film thickness distribution and film quality distribution.

[0243] Figure 12This is a graph showing the relationship between the swing position of the magnet 25 in this embodiment and the supply voltage (discharge voltage) from the plasma generation power source.

[0244] Here, the magnet unit MU, which has multiple magnets 25, is made to travel back and forth twice (scan twice). That is, the magnet unit MU travels from... Figure 12 The swing end_positive side moves to the swing end_reverse side e. Then, the magnet unit MU moves in the opposite direction and returns to the swing end_positive side. Furthermore, the magnet unit MU moves from the swing end_positive side to the swing end_reverse side e. Then, the magnet unit MU moves in the opposite direction and returns to the swing end_positive side. Additionally, in Figure 12 In the diagram, solid lines represent cases where auxiliary magnet 27 is provided, and dashed lines represent cases where auxiliary magnet 27 is not provided.

[0245] from Figure 12 It can be seen that, compared with the case without auxiliary magnet 27, the fluctuation range of discharge voltage at different swing positions is smaller when auxiliary magnet 27 is provided.

[0246] In addition, from Figure 12 It can be seen that, compared with the case without auxiliary magnet 27, the peak fluctuation of discharge voltage is suppressed when auxiliary magnet 27 is provided.

[0247] Figure 13 This indicates the film thickness distribution of the film formed by sputtering using the auxiliary magnet 27 as condition 0 in the sputtering apparatus 1 according to this embodiment. Figure 14 This indicates the distribution of the film resistance value (thin film resistance value) Rs of the film formed by sputtering using the auxiliary magnet 27 as condition 0 in the sputtering apparatus 1 according to this embodiment.

[0248] like Figure 13 As shown, compared with the case without auxiliary magnet 27, the film thickness distribution can be converged within the range of ±4.2% when auxiliary magnet 27 is provided.

[0249] like Figure 14 As shown, compared with the case without auxiliary magnet 27, the distribution of film resistance value Rs can be converged within the range of ±12.5% ​​when auxiliary magnet 27 is provided.

[0250] In contrast, Figures 15-20 The text indicates the situation where the sputtering film formation conditions are changed under three conditions without the auxiliary magnet 27. Figure 15 Indicates the film thickness distribution under condition 1. Figure 16 This represents the distribution of membrane resistance values ​​under condition 1. Figure 17 Indicates the film thickness distribution under condition 2. Figure 18 This represents the distribution of membrane resistance values ​​under condition 2. Figure 19 Indicates the film thickness distribution under condition 3. Figure 20 This represents the distribution of membrane resistance values ​​under condition 3.

[0251] The results under conditions 1 to 3 show that the film thickness distribution and the film resistance distribution are in a trade-off relationship, such as... Figure 21 As shown, previously, it was not possible to achieve a distribution further down than the line connecting the three conditions, which is inversely proportional. In contrast, using the auxiliary magnet 27... Figure 13 and Figure 14 Under the corresponding condition 0, compared with the case without auxiliary magnet 27, it can simultaneously reduce the film thickness distribution and film resistance distribution.

[0252] The configuration and dimensions of auxiliary magnet 27 and magnet 25 are described below.

[0253] like Figure 6 As shown, the configuration of the auxiliary magnet 27 and the peripheral magnet portion 32 closest to the auxiliary magnet 27 is set. Here, the tilt angle of the Y direction with respect to the magnet tilt line 27D is set to θ. The distance between the auxiliary magnet 27 in the X direction and the peripheral magnet portion 32 closest to the auxiliary magnet 27 is set to Wx. The distance between the auxiliary magnet 27 in the Y direction and the magnetic pole plane 30 is set to Wy.

[0254] Here, angle θ is the tilt angle of the axes of the N and S poles of the auxiliary magnet 27 relative to the Y direction. The direction in which the magnetic field lines formed by the N pole approach the nearest peripheral magnet portion 32 is set as the positive direction. In other words, the magnet tilt line 27D extending from the second magnetic pole surface 27S to the first magnetic pole surface 27F faces the swing region SW of the magnet 25. The value of angle θ is varied from 0 degrees to 90 degrees.

[0255] Additionally, distance Wx is the closest distance in the X direction between the auxiliary magnet 27 and the nearest peripheral magnet portion 32. When the auxiliary magnet 27 is tilted at an angle θ, this distance Wx is the distance from the protrusion 27b of the auxiliary magnet 27 in the X direction to the peripheral magnet portion 32. Distance Wx is varied from 0 mm to 30 mm.

[0256] Distance Wy is the distance in the Y direction between the most prominent protrusion 27a of the N pole of the auxiliary magnet 27 facing the target 23 and the magnetic pole plane 30. When distance Wy is negative, it indicates that the protrusion 27a is further away from the target 23 than the magnetic pole plane 30. Distance Wy is varied from 0 mm to 50 mm.

[0257] Figures 23-26This indicates the plasma density at the front surface 23a of the target 23 near the anode 28 when the configuration of the magnet 25 and the auxiliary magnet 27 in this embodiment is changed. Here, in Figures 23-26 The diagram shows the markings "×", "△", "〇", and "◎". These markings are in ascending order of plasma density. Specifically, "×" indicates the lowest plasma density. "◎" indicates the highest plasma density, and is equal to the plasma density at a location farthest from the anode 28. "〇" indicates approximately 80% of the plasma density of "◎". "△" indicates less than 50% of the plasma density of "◎".

[0258] from Figures 23-26 The results show that the plasma density remains constant when the angle θ is 90 degrees. Furthermore, it is known that the angle θ, distance Wx, and distance Wy are not independent parameters. For the angle θ, distance Wx, and distance Wy, it is understood that if an inclination such that the magnetic field lines of the closest peripheral magnet 32 ​​are pushed into the inner side of the oscillating region can be obtained, their values ​​are not, for example, values ​​whose preferred range is set solely by distance Wx.

[0259] Specifically, it is possible to achieve θ = 0 degrees, -10mm ≤ Wy ≤ 10mm, and 0mm ≤ Wx ≤ 20mm;

[0260] θ = 30 degrees, -10mm ≤ Wy ≤ 10mm, 0mm ≤ Wx ≤ 30mm;

[0261] θ = 60 degrees, 0 mm ≤ Wy ≤ 10 mm, 20 mm ≤ Wx ≤ 30 mm; set these as appropriate ranges.

[0262] Furthermore, (θ [degrees], Wx [mm], Wy [mm]) can be set as the range connecting the points of (0, 0, -10)(0, 0, 0)(0, 0, 10)(0, 10, 0)(30, 0, -10)(30, 0, 0)(30, 0, 10)(30, 10, 0)(30, 10, 10)(30, 20, 0)(30, 20, 10)(30, 30, 10)(60, 30, 0).

[0263] <Examples of variations in the magnetic field generation regions MG1, MG2, and MG3>

[0264] In the above embodiment, a structure in which the multiple magnetic field generating regions MG1, MG2, and MG3 constituting each of the nine magnets 25 are continuously connected in the Z direction has been described. In this modified example, a segmented structure is described where the multiple magnetic field generating regions MG1, MG2, and MG3 are divided in the Z direction. In this segmented structure, for example, the multiple magnetic field generating regions MG1, MG2, and MG3 may be divided one by one. Alternatively, two, three, or four magnetic field generating regions may be used to form a unit region, and multiple unit regions may be mutually divided.

[0265] In each of the second magnet 25S to the eighth magnet 25E, the multiple magnetic field generating regions MG1, MG2, and MG3 each have a segmented yoke, a segmented peripheral magnet portion, and a segmented central magnet portion.

[0266] Furthermore, in each of the first magnet 25F and the ninth magnet 25N, the multiple magnetic field generating regions MG1, MG2, and MG3 each have a segmented yoke, a segmented peripheral magnet section, a segmented central magnet section, and a segmented auxiliary magnet.

[0267] Here, the segmented magnetic yoke corresponds to the magnetic yoke 31 described above. The segmented peripheral magnet portion corresponds to the peripheral magnet portion 32 described above. The segmented central magnet portion corresponds to the central magnet portion 33 described above. The segmented auxiliary magnet corresponds to the auxiliary magnet 27 described above.

[0268] For each of the nine magnets 25, the positions of the multiple magnetic field generating regions MG1, MG2, and MG3 can be adjusted in the Z and Y directions. The magnets 25, which have the multiple magnetic field generating regions MG1, MG2, and MG3 after adjustment, can be oscillated by the magnet scanning unit 29.

[0269] To control the film formation state of the entire film-forming region, for example, the conditions of magnetic flux density related to plasma generation are sometimes adjusted in the Z and Y directions. According to this modified example, since multiple magnetic field generating regions MG1, MG2, and MG3 are segmented, the positions of the multiple magnetic field generating regions MG1, MG2, and MG3 in the Z and Y directions can be adjusted. Therefore, the conditions of magnetic flux density can be adjusted in each of the multiple magnetic field generating regions MG1, MG2, and MG3.

[0270] By adjusting each of the multiple magnetic field generating regions MG1, MG2, and MG3 in the Z and Y directions, in each of the multiple magnetic field generating regions, the magnetic field lines of the peripheral magnetic poles in the magnet 25 located at the first swing end can be tilted in the desired direction by dividing the auxiliary magnet. In each of the multiple magnetic field generating regions MG1, MG2, and MG3, the state of the magnetic field lines tilting in the desired direction can be maintained.

[0271] Example

[0272] The embodiments of the present invention will now be described.

[0273] Here, a verification test will be described as a specific example of film formation performed by sputtering in this invention. Here, the non-erosion area in target 23 is verified, the film thickness distribution is measured, and the thin film resistance distribution is measured.

[0274] <Experimental Example 1>

[0275] Using the sputtering apparatus 1 with auxiliary magnet 27 shown in the embodiment, the swing width is set to 82.5 mm from the center. That is, half of the swing distance in the X direction from the swing end_reverse side to the swing end_positive side is 82.5 mm.

[0276] Here, it represents the various aspects of film formation.

[0277] Condition 0

[0278] Target composition: Indium Tin Oxide (ITO)

[0279] Substrate dimensions (X-direction × Z-direction): 1500mm × 1800mm

[0280] Membrane composition: ITO

[0281] Film thickness: 80nm

[0282] Power supply (plasma generation power): 15kW

[0283] Bias power: Not used

[0284] Supply gas and gas flow rate: Ar 120 sccm

[0285] Atmospheric pressure: 0.2 Pa

[0286] Film formation time: 53 seconds

[0287] The width of the auxiliary magnet 27 in the X direction (width of the pole face) is 185mm.

[0288] Angle θ: 30°

[0289] Wx: 17mm

[0290] Wy: 20mm

[0291] Auxiliary yoke 31d: SUS430

[0292] The result, such as Figure 13 , Figure 14 , Figure 21As shown, film-forming characteristics with a film thickness distribution within 4.2% and a film resistance distribution within 12.5% ​​can be obtained.

[0293] <Experimental Examples 2-4>

[0294] ITO films were formed without the use of auxiliary magnet 27.

[0295] Condition 1

[0296] Target composition: ITO

[0297] Substrate dimensions (X-direction × Z-direction): 1500mm × 1800mm

[0298] Membrane composition: ITO

[0299] Film thickness: 80nm

[0300] Power supply (plasma generation power): 30kW

[0301] Bias power: Not used

[0302] Supply gas and gas flow rate: Ar 120 sccm

[0303] Atmospheric pressure: 0.2 Pa

[0304] Film formation time: 65 seconds

[0305] As a result, under condition 1, such as Figure 15 , Figure 16 , Figure 21 As shown, film-forming characteristics with a film thickness distribution of 7.9% and a film resistance distribution of 11.5% can be obtained.

[0306] Condition 2

[0307] Target composition: ITO

[0308] Substrate dimensions (X-direction × Z-direction): 1500mm × 1800mm

[0309] Membrane composition: ITO

[0310] Film thickness: 80nm

[0311] Power supply (plasma generation power): 30kW

[0312] Bias power: Not used

[0313] Supply gas and gas flow rate: H2O 0.5 sccm, Ar 120 sccm

[0314] Atmospheric pressure: 0.5 Pa

[0315] Film formation time: 74 seconds

[0316] As a result, under condition 2, such as Figure 17 , Figure 18 , Figure 21 As shown, film-forming characteristics with a film thickness distribution of 5.5% and a film resistance distribution of 21.3% can be obtained.

[0317] Condition 3

[0318] Target composition: ITO

[0319] Substrate dimensions (X-direction × Z-direction): 1500mm × 1800mm

[0320] Membrane composition: ITO

[0321] Film thickness: 80nm

[0322] Power supply (plasma generation power): 60kW

[0323] Bias power: Not used

[0324] Supply gas and gas flow rate: H2O 0.5 sccm, Ar 360 sccm

[0325] Atmospheric pressure: 0.3 Pa

[0326] Film formation time: 86 seconds

[0327] As a result, under condition 3, such as Figure 19 , Figure 20 , Figure 21 As shown, film-forming characteristics with a film thickness distribution of 4.2% and a film resistance distribution of 26.6% can be obtained.

[0328] <Experimental Example 5>

[0329] Sputtering was performed without the auxiliary magnet 27, and the front of the target was visually observed.

[0330] Target composition: aluminum

[0331] Substrate dimensions (X-direction × Z-direction): 1500mm × 1800mm

[0332] As a result, Figure 7 The dimensions of the non-eroded region E1 shown were measured to be 11 mm, 17 mm, 8 mm, and 11 mm, respectively. As... Figure 7 The dimensions of the non-eroded region E2 shown were measured to be 19 mm and 20 mm. As... Figure 7 The dimensions of the non-eroded area E3 shown were measured to be 10 mm, 5 mm, 8 mm, 10 mm, etc.

[0333] At the same time, the boundary region was observed, and its size was measured to be 15 mm.

[0334] <Experimental Example 6>

[0335] Sputtering is performed using auxiliary magnet 27, and the front of the target is visually observed.

[0336] Target composition: aluminum

[0337] Substrate dimensions (X-direction × Z-direction): 1500mm × 1800mm

[0338] The width of the auxiliary magnet 27 in the X direction (width of the pole face) is 185mm.

[0339] Angle θ: 30°

[0340] Wx: 17mm

[0341] Wy: 20mm

[0342] Auxiliary yoke 31d: SUS430

[0343] As a result, Figure 22 The dimensions of the non-eroded region E1 shown are 22 mm. However, no boundary region was observed.

[0344] <Experimental Example 7>

[0345] Use auxiliary magnet 27, such as Figures 23-26 As shown, θ [degrees], Wx [mm], and Wy [mm] are changed, and the plasma density is measured. Figures 23-26 The results are shown below. Therefore, as mentioned above, it is known that the specified relationships must be satisfied with respect to angle θ, distance Wx, and distance Wy.

[0346] Furthermore, in Experiment 6 using the auxiliary magnet 27, the front of the target 23 after the sputtering process was confirmed. The corner image at this time is as follows... Figure 28 As shown in the figure, the boundary of the non-eroded region is clear and unambiguous. During the processing, the plasma did not disappear in the non-eroded region, and no boundary region was observed.

[0347] Similarly, in Experiment 5 without the auxiliary magnet 27, the front of the target 23 after the sputtering process was confirmed. The corner image at this time is as follows... Figure 29 As shown in the figure. Based on this result, it can be seen that the boundary of the non-eroded region is blurred; during the processing, the plasma disappears in the non-eroded region, and the boundary region is observed.

[0348] These results show that by pressing the magnetic field lines into the anode 28 using the auxiliary magnet 27, the boundary region between the eroded and non-eroded areas can be reduced, thus reducing particles and improving the film thickness distribution and film resistance distribution.

[0349] Explanation of reference numerals in the attached figures

[0350] 1. Sputtering apparatus; 4. Film formation chamber (vacuum chamber)

[0351] 10 Cathode Device 10A Cathode Box

[0352] 11. Glass substrates (film-forming substrates, transparent substrates)

[0353] 13 Substrate holding section 22 Cathode unit

[0354] 23 Target 24 Backplate

[0355] 25 Magnet (magnetic circuit) 26 Control unit

[0356] 27 Auxiliary magnet 27a Protrusion bar

[0357] 28 Anode 29 Magnet Scanning Section

[0358] 31 Magnetic yoke 31d Auxiliary magnetic yoke

[0359] 32 Peripheral magnet section 33 Central magnet section

[0360] 33a End magnet section; 33b First coil section

[0361] 41 Front side space 42 Rear side space

[0362] MU Magnet Unit (Magnetic Circuit)

Claims

1. A sputtering apparatus comprising a cathode unit for ejecting sputtered particles onto a surface of a substrate to be coated, wherein, The cathode unit has: The target that has been eroded; A magnet unit having a plurality of magnets, the plurality of magnets being disposed on a side opposite to the target and the substrate to which the film is formed and for forming the etched region on the target; The magnet scanning unit enables the magnet unit and the substrate to be film-formed to reciprocate relative to each other between a first swing end and a second swing end in the swing direction along the processed surface of the substrate. as well as An auxiliary magnet is used to tilt the magnetic field lines formed by the magnet located at the first oscillating end of the plurality of magnets toward the second oscillating end, wherein the plurality of magnets extend along the processed surface of the substrate to be coated in an intersecting direction that intersects the oscillation direction. The auxiliary magnet is positioned along the magnet located at the first swing end, on the side opposite to the second swing end. The auxiliary magnet can swing together with the main magnet. The auxiliary magnet has the same polarity as the magnet located at the first swing end. The auxiliary magnet has protrusions along the magnet toward the target. The magnetic strength of the auxiliary magnet is equal to or less than the magnetic strength of the magnet located at the first swing end.

2. The sputtering apparatus according to claim 1, wherein, The auxiliary magnet is positioned on the side opposite to the target and is mounted and fixed on the magnetic yoke that forms the magnetic circuit.

3. The sputtering apparatus according to claim 1 or 2, wherein, The cathode unit has: A flat magnetic yoke with a central region on its surface composed of magnetic material; An auxiliary magnetic yoke is adjacent to the magnetic yoke; The central magnet is arranged in a straight line in the central region of the yoke; The peripheral magnets are arranged to surround the central magnet. Parallel regions where the central magnet and the peripheral magnets are parallel to each other. A magnetic circuit is disposed on the surface of the magnetic yoke; and The backplate overlaps with the magnetic circuit. The plurality of magnets constituting the magnetic unit are all disposed on the magnetic yoke. The auxiliary magnet is arranged parallel to the peripheral magnet. The auxiliary magnet is fixed to the magnetic yoke by means of the auxiliary magnetic yoke. The auxiliary magnetic yoke is composed of a magnetic body or a dielectric body.

4. The sputtering apparatus according to claim 3, wherein, The auxiliary yoke and the auxiliary magnet can be detached from the yoke.

5. The sputtering apparatus according to claim 4, wherein, The magnet located at the first swing end among the plurality of magnets has a plurality of magnetic field generating regions divided in the crossing direction. Each of the magnetic field generating regions has a segmented yoke, a segmented peripheral magnet section, a segmented central magnet section, and a segmented auxiliary magnet. The positions of the magnetic field generating regions can be adjusted in both the intersection direction and the thickness direction of the magnetic yoke. The magnet, which has the plurality of magnetic field generating regions with adjusted positions, can oscillate through the magnet scanning unit.

Images