A manifold and a thin film deposition apparatus

Abstract

The present application relates to the technical field of semiconductor manufacturing, and more particularly to a manifold for a thin film deposition device and a thin film deposition device. The manifold provided by the present application comprises a plurality of pneumatic valves, a plurality of gas inlet pipes, a plurality of gas outlet pipes and a gas mixing structure. The gas inlet pipes are connected to a gas tank and used for introducing process gas. The pneumatic valves are connected to the gas inlet pipes and used for controlling the inflow of gas from the gas inlet pipes. The gas mixing structure is connected to the gas inlet pipes through the pneumatic valves, receives the process gas introduced into the gas inlet pipes and mixes the process gas. The gas outlet pipes have one end connected to the gas mixing structure and the other end connected to a reaction cavity, and are used for outputting the mixed process gas from the gas mixing structure to the reaction cavity. The manifold and the thin film deposition device provided by the present application effectively ensure the uniform mixing of the gas by adding the gas mixing structure in the manifold, significantly improve the uniformity and consistency of the thin film deposition, and thus better meet various process requirements.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and more specifically, to a manifold for a thin film deposition apparatus and a thin film deposition apparatus. Background Technology

[0002] Thin film deposition technology is a crucial step in the manufacturing of microelectronic devices. By forming deposits on a substrate, various thin films can be created. Common thin film deposition techniques include physical vapor deposition (PVD) and chemical vapor deposition (CVD). With the continuous development of semiconductor technology, the requirements for thin film deposition technology are becoming increasingly stringent, and the structure of semiconductor thin film deposition equipment is becoming increasingly complex.

[0003] In thin film deposition equipment, the manifold plays a crucial role in controlling the inflow and outflow of different gases. However, in some current thin film deposition processes, the reaction gases need to be pre-mixed before entering the reaction chamber. To achieve this, most current technical solutions involve adding a mixing structure after the manifold. This structure results in uneven gas mixing, which affects the thin film deposition effect.

[0004] Figure 1 A cross-sectional view of a prior art manifold is revealed, such as... Figure 1 As shown, the existing manifold uses a direct connection of the channel in the middle position, without a gas mixing structure. This structure leads to uneven gas mixing, which in turn affects the thin film deposition effect.

[0005] Therefore, improving the uniformity of gas mixing is an urgent problem to be solved for existing thin film deposition equipment. Summary of the Invention

[0006] The purpose of this invention is to provide a manifold and a thin film deposition apparatus to solve the problem of uneven mixing of different reactive gases before they enter the reaction chamber in the prior art.

[0007] To achieve the above objectives, the present invention provides a manifold comprising a plurality of pneumatic valves, a plurality of inlet pipes, a plurality of outlet pipes, and a mixing structure:

[0008] The air inlet pipe is connected to the air box and is used to introduce process gas;

[0009] The pneumatic valve is connected to the air inlet pipe and is used to control the flow of gas into the air inlet pipe;

[0010] The gas mixing structure is connected to the air inlet pipe via a pneumatic valve, and receives and mixes the process gases introduced into the air inlet pipe.

[0011] The gas outlet pipe is connected at one end to the gas mixing structure and at the other end to the reaction chamber, outputting the process gas mixed by the gas mixing structure to the reaction chamber.

[0012] In one embodiment, the air-mixing structure includes a plurality of air intake chambers, a plurality of air distribution blocks, and an air-mixing chamber:

[0013] The air intake chamber is connected to the air intake pipe via a pneumatic valve to receive the process gas introduced into the air intake pipe;

[0014] The gas distribution block is located between the air inlet chamber and the gas mixing chamber, and guides the process gas in the air inlet chamber to the gas mixing chamber evenly.

[0015] The mixing chamber mixes several process gases before outputting them to the outlet pipe.

[0016] In one embodiment, the number of air intake chambers and air distribution blocks corresponds to the number of pneumatic valves and air intake pipes.

[0017] In one embodiment, a plurality of ventilation holes are evenly distributed on the gas distribution block.

[0018] In one embodiment, the air vents of the air distribution block are distributed in the following ways: concentric circle distribution, uniform grid distribution, diagonal distribution, and random distribution.

[0019] In one embodiment, the vents of the air distribution block are distributed in concentric circles:

[0020] The concentric circle distribution method is that the vents are distributed on the air distribution block in a concentric circle manner, and the vents in each concentric circle are evenly distributed.

[0021] In one embodiment, the vent is a circular vent, an oblong vent, or a square vent.

[0022] In one embodiment, process gas is introduced through the plurality of air inlets;

[0023] Several pneumatic valves open simultaneously;

[0024] The process gas enters the inlet chamber through the pneumatic valve and flows evenly to the mixing chamber through the gas distributor.

[0025] Inside the mixing chamber, the introduced process gas is mixed and then flows through the outlet pipe to the corresponding reaction chamber.

[0026] In one embodiment, the pneumatic valve includes a pneumatic valve inlet:

[0027] The air inlet of the pneumatic valve controls the opening and closing of the pneumatic valve.

[0028] To achieve the above objectives, the present invention provides a thin film deposition apparatus, characterized in that it comprises at least:

[0029] reaction chamber;

[0030] The manifold as described in any of the above claims is used to control the mixing of different process gases and their flow into the reaction chamber.

[0031] The present invention provides a manifold and a thin film deposition apparatus. The manifold incorporates a gas mixing structure, which effectively ensures uniform gas mixing and significantly improves the uniformity and consistency of thin film deposition, thereby better meeting various process requirements. Attached Figure Description

[0032] The above-described and other features, properties, and advantages of the present invention will become more apparent from the following description taken in conjunction with the accompanying drawings and embodiments, in which the same reference numerals consistently denote the same features.

[0033] in:

[0034] Figure 1 A cross-sectional view of a prior art manifold is shown;

[0035] Figure 2 A three-dimensional structural schematic diagram of a manifold according to an embodiment of the present invention is disclosed;

[0036] Figure 3 A cross-sectional view of a manifold according to an embodiment of the present invention is disclosed;

[0037] Figure 4 A schematic diagram of the gas flow direction in a manifold according to an embodiment of the present invention is disclosed;

[0038] Figure 5 A top view of a manifold according to an embodiment of the present invention is disclosed;

[0039] Figure 6 A top view of a gas distribution block according to an embodiment of the present invention is shown.

[0040] The meanings of the labels in the figures are as follows:

[0041] 11. First pneumatic valve;

[0042] 111 First pneumatic valve air inlet;

[0043] 12. First air intake pipe;

[0044] 13 First exhaust pipe

[0045] 21. Second pneumatic valve;

[0046] 211 Second pneumatic valve inlet;

[0047] 22 Second intake pipe;

[0048] 23 Second exhaust pipe;

[0049] 31 First gas distribution block;

[0050] 32 Second gas block;

[0051] 33 First intake chamber;

[0052] 34 Second air intake chamber;

[0053] 35. Mixing chamber;

[0054] 40 manifold. Detailed Implementation

[0055] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are for illustrative purposes only and are not intended to limit the invention.

[0056] It should be noted that the illustrations provided in the following embodiments are only schematic representations of the basic concept of the present invention. Although the illustrations only show the components related to the present invention and are not drawn according to the actual number, shape and size of the components in the actual implementation, the shape, quantity and proportion of each component in the actual implementation can be arbitrarily changed, and the layout of the components may also be more complex.

[0057] This invention relates to a thin film deposition apparatus. Its innovation lies in the addition of a gas mixing structure to the manifold. This structure enables more uniform mixing of multiple gases beforehand, significantly improving the uniformity of the film thickness. During equipment operation, this gas mixing structure ensures uniform gas mixing and distributes the mixed gas into two chambers. This design not only improves the uniformity of gas mixing but also further ensures highly uniform gas mixing within each chamber, thereby better guaranteeing the uniformity of the film thickness.

[0058] In some embodiments, the manifold proposed in this invention includes a plurality of pneumatic valves, a plurality of inlet pipes, a plurality of outlet pipes, and a mixing structure:

[0059] The air inlet pipe is connected to the air box and is used to introduce process gas;

[0060] The pneumatic valve is connected to the air inlet pipe and is used to control the flow of gas into the air inlet pipe;

[0061] The gas mixing structure is connected to the air inlet pipe via a pneumatic valve, and receives and mixes the process gases introduced into the air inlet pipe.

[0062] The gas outlet pipe is connected at one end to the gas mixing structure and at the other end to the reaction chamber, outputting the process gas mixed by the gas mixing structure to the reaction chamber.

[0063] Figure 2 A three-dimensional structural schematic diagram of a manifold according to an embodiment of the present invention is disclosed. Figure 3 A cross-sectional view of a manifold according to an embodiment of the present invention is disclosed, such as... Figure 2 and Figure 3 As shown, the manifold 40 proposed in this invention includes a first pneumatic valve 11, a first air inlet pipe 12, a first air outlet pipe 13, a second pneumatic valve 21, a second air inlet pipe 22, a second air outlet pipe 23, and a mixing structure.

[0064] The first air inlet pipe 12 and the second air inlet pipe 22 are respectively connected to two gas boxes containing different process gases for introducing process gases.

[0065] The first pneumatic valve 11 is connected to the first air inlet pipe 12 and controls the flow of gas into the first air inlet pipe 12;

[0066] The second pneumatic valve 21 is connected to the second air inlet pipe 22 to control the flow of gas into the second air inlet pipe 22;

[0067] The gas mixing structure is connected to the first air inlet pipe 12 via the first pneumatic valve 11, and receives the first process gas introduced into the first air inlet pipe 12.

[0068] The gas mixing structure is connected to the second air inlet pipe 22 via the second pneumatic valve 21 to receive the second process gas introduced into the second air inlet pipe 22.

[0069] The gas mixing structure mixes the first process gas and the second process gas, and outputs the mixed process gas to the first outlet pipe 13 and the second outlet pipe 23.

[0070] The first exhaust pipe 13 and the second exhaust pipe 23 are respectively connected to the pipelines entering the reaction chamber, and output the process gas after being mixed by the gas mixing structure to the corresponding reaction chamber.

[0071] A pneumatic valve is an electromechanical intelligent control component that uses a pneumatic actuator to control the switching, regulation, and flow control of the fluid medium within the valve body.

[0072] Pneumatic valves can regulate and control fluid media in pipelines, achieving uniform flow distribution and stable operation. The control method of pneumatic valves is simple; only the air source pressure needs to be adjusted to control the valve. Because gas transmission in pipelines is stable, pneumatic valves also offer good stability.

[0073] like Figure 2 As shown, the air inlet 111 of the first pneumatic valve controls the opening and closing of the first pneumatic valve 11.

[0074] The second pneumatic valve inlet 211 controls the opening and closing of the second pneumatic valve 21.

[0075] For example, when only gas needs to flow into the first intake pipe 12, the second pneumatic valve 21 at the upper end of the second intake pipe 22 is closed, and the first pneumatic valve 11 at the upper end of the first intake pipe 12 needs to be opened, and so on.

[0076] To ensure that the reactant gases are thoroughly and uniformly mixed before entering the reaction chamber, this invention incorporates a gas mixing structure into the manifold. The gas mixing structure includes a mixing chamber, several inlet chambers, and several gas distribution blocks.

[0077] The air distribution block is located between the air intake chamber and the air mixing chamber.

[0078] The number of air intake chambers and air distribution blocks corresponds to the number of pneumatic valves and air intake pipes.

[0079] like Figure 3 As shown, in this embodiment, the gas mixing structure includes a first gas distribution block 31, a first air intake chamber 33, a second gas distribution block 32, a second air intake chamber 34, and a gas mixing chamber 35.

[0080] The first air inlet chamber 33 is connected to the first air inlet pipe 12 via the first pneumatic valve 11, and receives the first process gas introduced into the first air inlet pipe 12;

[0081] The second air inlet chamber 34 is connected to the second air inlet pipe 22 via the second pneumatic valve 21, and receives the second process gas introduced into the second air inlet pipe 22;

[0082] The first gas distribution block 31 is disposed between the first air inlet chamber 33 and the mixing chamber 35, so that the first process gas in the first air inlet chamber 33 flows evenly to the mixing chamber 35.

[0083] The second gas distribution block 32 is disposed between the second air inlet chamber 34 and the mixing chamber 35, so that the second process gas in the second air inlet chamber 34 flows evenly to the mixing chamber 35.

[0084] The mixing chamber 35 mixes the first process gas and the second process gas and outputs them to the first outlet pipe 13 and the second outlet pipe 23, and then flows into the two reaction chambers respectively.

[0085] The addition of this gas mixing structure not only simplifies the equipment structure and significantly improves its stability and durability, but also greatly enhances the uniformity of gas mixing, making the thin film deposition process more stable and reliable.

[0086] Figure 4 A schematic diagram of the gas flow direction in a manifold according to an embodiment of the present invention is shown, as follows: Figure 4 As shown, when the reaction chamber requires the mixing of two process gases before introduction:

[0087] The first process gas is introduced into the first air inlet pipe 12, and the second process gas is introduced into the second air inlet pipe 22.

[0088] The first pneumatic valve 11 and the second pneumatic valve 21 open simultaneously;

[0089] The first process gas enters the first intake chamber 33 through the first pneumatic valve 11, and flows evenly to the mixing chamber 35 through the first gas distribution block 31.

[0090] The second process gas enters the second air inlet chamber 34 through the second pneumatic valve 21, and flows evenly to the mixing chamber 35 through the second gas distribution block 32.

[0091] Inside the mixing chamber 35, the first process gas and the second process gas are mixed and then flow to the corresponding reaction chambers through the first outlet pipe 13 and the second outlet pipe 23, respectively.

[0092] Figure 5 A top view of a manifold according to an embodiment of the present invention is disclosed, as shown below. Figure 5 As shown, the first process gas and the second process gas are mixed and then flow to the two reaction chambers through the first outlet pipe 13 and the second outlet pipe 23.

[0093] Figure 6 A top view of a gas distribution block according to an embodiment of the present invention is disclosed, as shown below. Figure 6 As shown, 26 small holes are evenly distributed on the gas distribution block, which allows the gas to flow evenly into the mixing chamber.

[0094] In this embodiment, several ventilation holes are evenly distributed on the gas distribution block.

[0095] There are no special requirements regarding the number and distribution of vents; the number and distribution of vents can be adjusted according to actual needs. The specific method depends on the number and arrangement requirements of the vents.

[0096] Here are some common through-hole distribution methods:

[0097] Concentric circle distribution: The vents can be distributed on the air distribution block in a concentric circle manner. The number of vents on each concentric circle may be different, but the vents in each circle are evenly distributed.

[0098] Uniform grid distribution: This is the simplest method, where the vents form a regular grid arrangement on the air distribution block, with equal distances between the vents. This arrangement is easy to design and manufacture, and is suitable for applications requiring uniformly distributed vents.

[0099] Spiral distribution: Ventilation holes can be distributed in a spiral pattern on the air distribution block. This distribution method allows for more ventilation holes to be placed in a limited area, but it is also more complex.

[0100] Diagonal distribution: Vent holes can be distributed in pairs diagonally on the air distribution block. This method is often used in specific applications and can provide certain performance advantages.

[0101] Random distribution: Ventilation holes can also be distributed randomly on the air distribution blocks. This method is usually uncommon, but there may be special requirements in some cases.

[0102] These different vent distribution patterns enable the gas distribution block to distribute gas more effectively, thereby meeting different process requirements.

[0103] The choice of venting pattern depends on the specific application requirements and performance specifications. For example, a uniform grid distribution may be the simplest and most effective method for some applications, while a spiral distribution can accommodate more vents within a limited space. Concentric circle and diagonal distributions may be suitable for situations requiring specific performance or special shapes for vent arrangements. In practical designs, factors such as the number, diameter, spacing, size, and shape of the vents, as well as the air distribution blocks, must typically be considered to select the appropriate distribution method.

[0104] The shape of the vent hole may include, but is not limited to, a circular vent hole, an oblong vent hole, or a square vent hole.

[0105] Based on the aforementioned manifold, the present invention proposes a thin film deposition apparatus, comprising at least:

[0106] reaction chamber;

[0107] The manifold, which employs the gas mixing structure described above, is used to control the mixing of different process gases and their flow into the reaction chamber.

[0108] In summary, this invention proposes a thin film deposition apparatus that incorporates a gas mixing structure in the manifold, allowing the process gas to be uniformly mixed and distributed to the two chambers, greatly simplifying the apparatus structure and improving the uniformity of gas mixing.

[0109] In the description of this invention, it should be noted that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limiting this invention.

[0110] As indicated in this application and claims, unless the context clearly indicates otherwise, the words "a," "an," "an," and / or "the" are not specifically singular and may include plural forms. Generally speaking, the terms "comprising" and "including" only indicate the inclusion of explicitly identified steps and elements, which do not constitute an exclusive list, and the method or apparatus may also include other steps or elements.

[0111] The terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, unless otherwise stated, "a plurality of" means two or more, unless explicitly defined otherwise.

[0112] Unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0113] The above embodiments are provided for those skilled in the art to implement or use the present invention. Those skilled in the art can make various modifications or changes to the above embodiments without departing from the inventive concept of the present invention. Therefore, the protection scope of the present invention is not limited to the above embodiments, but should be the maximum scope that conforms to the innovative features mentioned in the claims.

Claims

1. A manifold, characterized in that, Includes several pneumatic valves, several air inlet pipes, several air outlet pipes, and a mixing structure: The air inlet pipe is connected to the air box and is used to introduce process gas; The pneumatic valve is connected to the air inlet pipe and is used to control the flow of gas into the air inlet pipe; The gas mixing structure is connected to the air inlet pipe via a pneumatic valve, and receives and mixes the process gases introduced into the air inlet pipe. The gas outlet pipe is connected at one end to the gas mixing structure and at the other end to the reaction chamber, and outputs the process gas mixed by the gas mixing structure to the reaction chamber. The gas mixing structure includes several air intake chambers, several air distribution blocks, and a gas mixing chamber. The number of air intake chambers and air distribution blocks corresponds one-to-one with the number of pneumatic valves and air intake pipes; The air intake chamber is connected to the air intake pipe via a pneumatic valve to receive the process gas introduced into the air intake pipe; The gas distribution block is located between the air inlet chamber and the gas mixing chamber, which uniformly guides the process gas in the air inlet chamber to the gas mixing chamber. The mixing chamber mixes several process gases before outputting them to the outlet pipe. The process gas is introduced through the several air inlet pipes; Several pneumatic valves open simultaneously; The process gas enters the inlet chamber through the pneumatic valve and flows evenly to the mixing chamber through the gas distributor. Inside the mixing chamber, the introduced process gas is mixed and then flows through the outlet pipe to the corresponding reaction chamber.

2. The manifold according to claim 1, characterized in that, The gas distribution block has several vent holes evenly distributed on it.

3. The manifold according to claim 2, characterized in that, The distribution of ventilation holes in the gas distribution block includes concentric circle distribution, uniform grid distribution, spiral distribution, diagonal distribution, and random distribution.

4. The manifold according to claim 3, characterized in that, The ventilation holes of the gas distribution block are distributed in concentric circles: The concentric circle distribution method is that the vents are distributed on the air distribution block in a concentric circle manner, and the vents in each concentric circle are evenly distributed.

5. The manifold according to any one of claim 2, claim 3, or claim 4, characterized in that, The vent hole can be a circular vent hole, an oblong vent hole, or a square vent hole.

6. The manifold according to claim 1, characterized in that, The pneumatic valve includes a pneumatic valve inlet: The air inlet of the pneumatic valve controls the opening and closing of the pneumatic valve.

7. A thin film deposition apparatus, characterized in that, At least including: reaction chamber; The manifold according to any one of claims 1 to 6, wherein the manifold is used to control the mixing of different process gases and their flow into the reaction chamber.

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