Etchant composition, method for forming metal layer, and display panel

Abstract

The application discloses an etchant composition, a metal layer forming method and a display panel. The etchant composition is used for etching a metal film layer containing a copper-based film layer and a molybdenum-based shielding metal layer, and comprises hydrogen peroxide, an etching aid, a shielding metal layer inhibitor and water. The shielding metal layer inhibitor comprises a first shielding metal layer inhibitor and a second shielding metal layer inhibitor. The first shielding metal layer inhibitor is selected from at least one of purine compounds, pyrimidine compounds and glycoside acid compounds. The second shielding metal layer inhibitor is selected from at least one of ethylene imine and polyethylene imine. The etchant composition has excellent selective etching effect. On the basis of effective etching of the copper-based film layer, the molybdenum-based shielding metal layer cannot be etched, and the film layer existing on the lower side of the shielding metal layer, such as an active layer, cannot be corroded and damaged.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to an etching agent composition, a method for forming a metal layer, and a display panel. Background Art

[0002] Currently, gate or source / drain metal wiring in large-scale displays typically uses copper, a metal with lower resistance and greater environmental friendliness. However, copper exhibits poor adhesion to glass substrates and silicon-based active layers, and is prone to diffusion into the silicon-based active layer. To address these issues, a shielding metal layer is typically added beneath the copper film layer, primarily composed of molybdenum or its alloys. Specifically, to compensate for the shortcomings of copper wiring, a multilayer metal film structure is formed, with copper serving as the primary metal film layer and a shielding metal layer made of molybdenum or its alloys added as a buffer layer. For etching such metal films, Korean Patent Publication No. 2003-0082375 and Patent Publication No. 2004-0051502 disclose hydrogen peroxide-based copper / molybdenum etchants.

[0003] However, the etchants used in the past, whether containing fluorine or not, will react with the active layer below the source and drain metal layer and cause damage. In severe cases, it will cause the thin film transistor device to fail and lead to poor display problems. Summary of the Invention

[0004] The present invention provides an etchant composition, a method for forming a metal layer and a display panel. The etchant composition can solve the problem of damage to the active layer during the etching process.

[0005] To solve the above problems, in a first aspect, the present invention provides an etchant composition for etching a metal film layer comprising a copper-based film layer and a molybdenum-based barrier metal layer, comprising: hydrogen peroxide, an etching aid, a barrier metal layer inhibitor, and water;

[0006] Among them, the shielding metal layer inhibitor includes a first shielding metal layer inhibitor and a second shielding metal layer inhibitor, the first shielding metal layer inhibitor is selected from at least one of purine compounds, pyrimidine compounds and glycoside compounds, and the second shielding metal layer inhibitor is selected from at least one of ethyleneimine and polyethyleneimine.

[0007] In one embodiment provided by the embodiments of the present invention, the first shielding metal layer inhibitor is selected from at least one of purine, adenine, guanine, pyrimidine, cytosine, uracil, thymine, adenylic acid, guanylic acid, cytidylic acid, guanylic acid, cytidine acid, guanylic acid and thymidylic acid.

[0008] In one embodiment provided by the embodiments of the present invention, the mass ratio of the first shielding metal layer inhibitor to the second shielding metal layer inhibitor in the shielding metal layer inhibitor is (2-5):1.

[0009] In one embodiment provided by the embodiments of the present invention, the mass percentage of the barrier metal layer inhibitor in the etchant composition is 0.01%-2%.

[0010] In one embodiment provided by the embodiments of the present invention, the etchant composition further includes a stabilizer, and the stabilizer is selected from at least one sulfonic acid compound.

[0011] In one embodiment provided by the embodiments of the present invention, the mass percentage of the stabilizer in the etchant composition is 0.01%-5%.

[0012] In one embodiment provided by the embodiments of the present invention, the etching aid includes a chelating agent, a corrosion inhibitor and an etching acid agent, wherein the chelating agent is at least one compound containing a chelating group, the chelating group is selected from a carboxyl group, a phosphate group or a silicate group, the corrosion inhibitor is selected from at least one azole compound, and the etching acid agent is selected from at least one carboxylic acid compound.

[0013] In one embodiment provided by the embodiments of the present invention, in the etchant composition, the mass percentage of the hydrogen peroxide is 5%-12%, the mass percentage of the chelating agent is 0.5%-3%, the mass percentage of the corrosion inhibitor is 0.005%-1%, and the mass percentage of the etching acid is 0.1%-4%.

[0014] In a second aspect, the present invention further provides a method for forming a metal layer, the method comprising the following steps:

[0015] Providing a substrate, and sequentially forming a shielding metal film and a copper film on the substrate;

[0016] forming a photoresist on the copper film;

[0017] Under the shielding of the photoresist, patterning the copper film using the above-mentioned etchant composition; and

[0018] Under the shielding of the photoresist, the shielding metal film is patterned using a dry etching process.

[0019] In a third aspect, the present invention further provides a display panel, comprising a metal layer, wherein the metal layer is obtained by the above-mentioned method for forming a metal layer.

[0020] Beneficial effect: The embodiment of the present invention provides an etchant composition, a method for forming a metal layer and a display panel, wherein the etchant composition includes hydrogen peroxide, an etching aid, a shielding metal layer inhibitor and water; when the etchant composition is used to etch a metal film layer including a copper film layer and a molybdenum shielding metal layer, based on the difference in corrosion potential between copper and molybdenum, the first shielding metal layer inhibitor containing a hetero-nitrogen group will be selectively adsorbed on the surface of the molybdenum shielding metal layer, and at the same time, the second shielding metal layer inhibitor acts as a surfactant on the surface of the molybdenum shielding metal layer to achieve synergistic adsorption, so that during the etching process, the surface of the shielding metal layer exposed due to the etching removal of the copper film layer will be covered by the adsorbed shielding metal layer inhibitor, which is equivalent to forming a shielding film layer to block the etchant composition from etching the molybdenum shielding metal layer, that is, the etchant composition has an excellent selective etching effect, and will not etch the molybdenum shielding metal layer on the basis of effectively etching the copper film layer. Based on this, it will not corrode and damage the film layer on the lower side of the shielding metal layer, such as the active layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0022] Figure 1 This is a microscopic morphology image obtained by characterizing the test piece 1 provided in an embodiment of the present invention under a scanning electron microscope after etching with the etchant 2;

[0023] Figure 2 This is a microscopic morphology image obtained by characterizing the test piece 1 provided in an embodiment of the present invention under a scanning electron microscope after etching with the etchant 5;

[0024] Figure 3 is a text flow diagram of a method for forming a metal layer provided by an embodiment of the present invention;

[0025] Figures 4a-4e It is a structural flow diagram of a method for forming a metal layer provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0026] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without making any creative efforts shall fall within the scope of protection of the present invention.

[0027] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the said features. In the description of the present invention, the meaning of "multiple" is two or more, unless otherwise clearly and specifically defined.

[0028] In this application, the word "exemplary" is used to mean "serving as an example, illustration, or illustration." Any embodiment described in this application as "exemplary" is not necessarily to be construed as preferred or advantageous over other embodiments. The following description is given to enable any person skilled in the art to make and use the invention. In the following description, details are listed for the purpose of explanation. It should be understood that one of ordinary skill in the art will recognize that the invention can be practiced without these specific details. In other instances, well-known structures and processes are not described in detail to avoid obscuring the description of the invention with unnecessary detail. Therefore, the present invention is not intended to be limited to the embodiments shown, but is to be accorded the widest scope consistent with the principles and features disclosed herein.

[0029] An embodiment of the present invention provides an etchant composition for etching a metal film layer including a copper-based film layer and a molybdenum-based shielding metal layer, comprising: hydrogen peroxide, an etching aid, a shielding metal layer inhibitor, and water;

[0030] Among them, the shielding metal layer inhibitor includes a first shielding metal layer inhibitor and a second shielding metal layer inhibitor, the first shielding metal layer inhibitor is selected from at least one of purine compounds, pyrimidine compounds and glycoside compounds, and the second shielding metal layer inhibitor is selected from at least one of ethyleneimine and polyethyleneimine.

[0031] In the etchant composition provided by the embodiment of the present invention, by adding a shielding metal layer inhibitor of a specific composition, the shielding metal layer inhibitor specifically includes a first shielding metal layer inhibitor composed of at least one of a purine compound, a pyrimidine compound and a glycoside compound and a second shielding metal layer inhibitor composed of at least one of ethyleneimine and polyethyleneimine. When the etchant composition is used to etch a metal film layer comprising a copper film layer and a molybdenum-based shielding metal layer, based on the difference in corrosion potential between copper and molybdenum, the first shielding metal layer inhibitor containing a hetero-nitrogen group will be selectively adsorbed on the surface of the molybdenum-based shielding metal layer, and at the same time, the The second shielding metal layer inhibitor acts as a surfactant on the surface of the molybdenum-based shielding metal layer to achieve synergistic adsorption, so that during the etching process, the surface of the shielding metal layer exposed due to the etching and removal of the copper-based film layer will be covered by the adsorbed shielding metal layer inhibitor, which is equivalent to forming a shielding film layer to block the etchant composition from etching the molybdenum-based shielding metal layer. That is, the etchant composition has an excellent selective etching effect. While effectively etching the copper-based film layer, it will not etch the molybdenum-based shielding metal layer. Based on this, it will not corrode the film layer on the lower side of the shielding metal layer, such as the active layer, and damage it.

[0032] It should be supplemented that the material of the copper-based film layer described in the embodiment of the present invention is copper or a copper alloy, and the material of the molybdenum-based shielding metal layer is molybdenum or a molybdenum alloy.

[0033] In some embodiments, the first barrier metal layer inhibitor is selected from at least one of purine, adenine, guanine, pyrimidine, cytosine, uracil, thymine, adenylic acid, guanylic acid, cytidylic acid, guanylic acid, cytidylic acid, guanylic acid, and thymidylic acid.

[0034] In some embodiments, the mass ratio of the first shielding metal layer inhibitor to the second shielding metal layer inhibitor in the shielding metal layer inhibitor is (2 to 5):1. Exemplarily, the mass ratio of the first shielding metal layer inhibitor to the second shielding metal layer inhibitor in the shielding metal layer inhibitor is 2:1, 2.5:1, 3:1, 3.5:1, 4:1, 4.5:1 or 5:1. Within the above ratios, the first shielding metal layer inhibitor and the second shielding metal layer inhibitor synergistically exhibit excellent inhibitory effects on the shielding metal layer.

[0035] In some embodiments, the mass percentage of the shielding metal layer inhibitor in the etchant composition is 0.01%-2%, further, the mass percentage of the shielding metal layer inhibitor is 0.1%-1%, and illustratively, the mass percentage of the shielding metal layer inhibitor is 0.2%, 0.3%, 0.4%, 0.5%, 0.6%, 0.7%, 0.8% or 0.9%. Within the above ratios, the shielding metal layer inhibitor exhibits excellent inhibitory effect on the shielding metal layer.

[0036] In some embodiments, the etchant composition further includes a stabilizer, and the stabilizer is selected from at least one sulfonic acid compound. The stabilizer is used to solve the problem of decomposition of hydrogen peroxide caused by the reaction of the shielding layer metal inhibitor with hydrogen peroxide. Exemplarily, the stabilizer is selected from at least one of methanesulfonic acid, p-toluenesulfonic acid, benzenesulfonic acid, aminomethanesulfonic acid or sulfonic acid. Further, the stabilizer is methanesulfonic acid.

[0037] In some embodiments, the mass percentage of the stabilizer in the etchant composition is 0.01%-5%, further, the mass percentage of the stabilizer is 0.5%-3%, and illustratively, the mass percentage of the stabilizer is 0.6%, 0.7%, 0.8%, 0.9%, 1.0%, 1.2%, 1.4%, 1.6%, 1.8%, 2.0%, 2.2%, 2.4%, 2.6% or 2.8%.

[0038] In some embodiments, the etching aid includes a chelating agent, a corrosion inhibitor, and an etching acid.

[0039] The chelating agent is at least one compound containing a chelating group, wherein the chelating group is selected from a carboxyl group, a phosphate group or a silicate group. The chelating agent chelates the metal ions oxidized during the etching process to passivate them, slowing down the decomposition rate of hydrogen peroxide, thereby ensuring the stability of the etchant composition, maintaining a high etching efficiency and extending the service life of the etchant composition.

[0040] Furthermore, the chelating agent is selected from at least one of iminodiacetic acid, nitrilotriacetic acid, ethylenediaminetetraacetic acid, diethylnitroacetic acid, aminotri(methylphosphonic acid), (1-hydroxyethane-1,1-diene compound)bis(phosphonic acid), ethylenediaminetetra(methylphosphonic acid), diethylenetriaminepenta(methylphosphonic acid), alanine, glutamic acid, aminobutyric acid and glycine. Exemplarily, the chelating agent is iminodiacetic acid.

[0041] The corrosion inhibitor is selected from at least one azole compound, and is used to combine with copper ions on the surface of the copper film to prevent excessive corrosion caused by the etchant composition, thereby reducing the critical dimension deviation of the etched pattern and improving the etching accuracy;

[0042] Furthermore, the corrosion inhibitor is selected from at least one of 3-amino-1,2,3-triazole, 3-amino-1,2,4-triazole, 4-amino-1,2,3-triazole, 4-amino-1,2,4-triazole, 5-methyltetrazole, 5-aminotetrazole, imidazole and pyrazole. Exemplarily, the corrosion inhibitor is 5-aminotetrazole.

[0043] The etching acid agent is selected from at least one of carboxylic acid compounds, specifically a carboxylic acid compound without nitrogen atoms, and is used to adjust the pH value of the etching agent composition;

[0044] The etching acid is selected from at least one of acetic acid, formic acid, butyric acid, citric acid, glycolic acid, oxalic acid, malonic acid, valeric acid, propionic acid, fruit acid, gluconic acid and succinic acid. Further, the etching acid is citric acid.

[0045] In some embodiments, in the etchant composition, the mass percentage of the hydrogen peroxide is 5%-12%, further, the mass percentage of the hydrogen peroxide is 7%-10%, illustratively, the mass percentage of the hydrogen peroxide is 7.5%, 8%, 8.5%, 9% or 9.5%. Within the above range, the contained hydrogen peroxide has good oxidizing ability and etching efficiency, and the etching speed is appropriate;

[0046] The mass percentage of the chelating agent is 0.5%-3%. Further, the mass percentage of the chelating agent is 1.5%-2.5%. Exemplarily, the mass percentage of the chelating agent is 1.6%, 1.7%, 1.8%, 1.9%, 2.0%, 2.1%, 2.2%, 2.3% or 2.4%. Within the above range, a high etching efficiency can be maintained, the stability of the etchant composition is ensured, and the service life of the etchant is extended;

[0047] The mass percentage of the corrosion inhibitor is 0.005%-1%. Further, the mass percentage of the corrosion inhibitor is 0.05%-0.5%. Exemplarily, the mass percentage of the corrosion inhibitor is 0.06%, 0.07%, 0.08%, 0.09%, 0.1%, 0.2%, 0.3% or 0.4%. Within the above range, good etching efficiency can be maintained and excessive corrosion can be suppressed;

[0048] The mass percentage of the etching acid is 0.1%-4%, further, the mass percentage of the etching acid is 0.5%-2%, and illustratively, the mass percentage of the etching acid is 0.6%, 0.7%, 0.8%, 0.9%, 1.0%, 1.1%, 1.2%, 1.3%, 1.4%, 1.5%, 1.6%, 1.7%, 1.8% or 1.9%. Within the above range, the etching rate is moderate and the tapered angle morphology of the structure obtained by etching is good.

[0049] In some embodiments, the etchant composition does not contain fluoride.

[0050] In some embodiments, the water in the etchant composition is deionized water, and further, deionized water having a non-resistance value of greater than 18 MΩ·cm.

[0051] The following is further described with reference to specific embodiments:

[0052] Example 1

[0053] Etchant 1 was prepared according to the components and composition shown in Table 1 below, wherein iminodiacetic acid (IDA) was used as a chelating agent, 5-methyltetrazole (MTZ) was used as an inhibitor, citric acid was used as an etching acid, adenosine was used as a first shielding metal layer inhibitor, polyethyleneimine (PEI) was used as a second shielding metal layer inhibitor, and methanesulfonic acid (MSA) was used as a stabilizer, and the etchant did not contain hydrogen fluoride.

[0054] Example 2

[0055] Etchant 2 was prepared according to the ingredients and composition shown in Table 1 below.

[0056] Example 3

[0057] Etchant 3 was prepared according to the ingredients and composition shown in Table 1 below.

[0058] Comparative Example 1

[0059] Etchant 4 was prepared according to the ingredients and composition shown in Table 1 below. The difference from Example 1 is the hydrogen peroxide content.

[0060] Comparative Example 2

[0061] Etchant 4 was prepared according to the ingredients and composition shown in Table 1 below. The difference from Example 1 is the content of iminodiacetic acid.

[0062] Comparative Example 3

[0063] An etchant 5 was prepared according to the ingredients and composition shown in Table 1 below. The etchant 5 differs from Example 1 in that it does not contain adenosine monophosphate as an inhibitor of the first shielding metal layer.

[0064] Comparative Example 4

[0065] Etchant 6 was prepared according to the ingredients and composition shown in Table 1 below. The difference from Example 1 is that polyethyleneimine was used as the second shielding metal layer inhibitor.

[0066] Comparative Example 5

[0067] An etchant 7 was prepared according to the ingredients and composition shown in Table 1 below. The etchant 7 differs from Example 1 in that hydrogen fluoride was further added.

[0068] Table 1

[0069] Etchant composition H2O2 IDA MTZ citric acid Adenosine PEI MSA HF Etchant 1 10.0 1.8 0.2 1.5 0.5 0.1 0.8 0 Etchant 2 10.0 1.8 0.1 1.0 0.5 0.1 0.8 0 Etchant 3 8.0 1.8 0.1 1.5 0.3 0.15 0.8 0 Etchant 4 20.0 1.8 0.2 1.5 0.5 0.1 0.8 0 Etchant 5 10.0 4.0 0.2 1.5 0.5 0.1 0.8 0 Etchant 6 10.0 1.8 0.2 1.5 0 0.1 0.8 0 Etchant 7 10.0 1.8 0.2 1.5 0.5 0 0.8 0 Etchant 8 10.0 1.8 0.2 1.5 0.5 0.1 0.8 0.05

[0070] After depositing an organic insulating film and an oxide semiconductor film made of indium gallium zinc oxide on a glass substrate, a barrier metal film with a thickness of 300 angstroms and a copper film with a thickness of 5500 angstroms are deposited on the oxide semiconductor film. The barrier metal film is made of molybdenum, and a photoresist layer with a certain pattern is formed on the barrier metal film. Finally, a diamond knife is used to cut the film into multiple test pieces 1 with a size of 4 cm × 3 cm.

[0071] According to the above steps, the material of the shielding metal film is replaced with MoTi to prepare multiple test pieces 2;

[0072] According to the above steps, the material of the shielding metal film is replaced with MoNb to prepare multiple test pieces 3;

[0073] According to the above steps, the material of the shielding metal film is replaced with MoNbTi to prepare a plurality of test pieces 4.

[0074] 1 kg of each etchant 1 listed in the table above was placed in a beaker and heated in a water bath. When the set temperature (32°C) was reached, the prepared test piece 1 was added and etched. The total etching time was based on End Point Detection (EPD) and an overetching time of 30%. The etched substrate was cleaned and dried, and a scanning electron microscope was used to confirm whether the shielding metal film was damaged.

[0075] Test pieces 2 to 4 were verified according to the above steps.

[0076] Etchant 2 to Etchant 7 were verified according to the above steps. The results are summarized in Table 2 below, where ◎ represents that the shielding layer metal film is not damaged, ○ represents that the shielding layer metal film is partially etched, and × represents that the shielding layer metal film is completely etched:

[0077] Table 2

[0078]

[0079]

[0080] According to the above experimental structure, it can be seen that when the etching agent provided by the embodiment of the present invention is used for etching, no matter the material of the etching shielding layer metal film is molybdenum, molybdenum titanium, molybdenum niobium or molybdenum niobium titanium, the etching shielding layer metal film will not be etched. Among them, the micromorphology of the test piece 1 under the scanning electron microscope after the etching by the etchant 2 is shown as follows: Figure 1 , it can be clearly seen that the shielding metal film made of molybdenum has not been etched and is still intact on the substrate;

[0081] Furthermore, due to the excessively high hydrogen peroxide content in etchant 4, the shielding metal film made of molybdenum was etched away, and the shielding metal film made of molybdenum-titanium, molybdenum-niobium, or molybdenum-niobium-titanium was partially etched away. This confirms that when excessive hydrogen peroxide is added, the shielding effect of the shielding metal layer inhibitor on the shielding metal film is weakened, resulting in the shielding metal film still being partially etched away or completely etched away.

[0082] Since the chelating agent content of the etchant 5 is too high, it etches away the shielding metal film made of molybdenum and partially etches away the shielding metal film made of molybdenum-niobium or molybdenum-niobium-titanium. It can be confirmed that when the chelating agent is added in excess, the shielding effect of the shielding metal layer inhibitor on the shielding metal film is weakened, resulting in the shielding metal film still being partially etched away or completely etched away. The micromorphology of the test piece 1 under the scanning electron microscope after etching by the etchant 5 is shown in FIG. Figure 2 It can be clearly seen that the shielding metal film made of molybdenum is basically etched away, specifically, only the part under the copper film is retained, while the part exposed outside the copper film is basically etched away, with only tiny flocculent residues;

[0083] Since etchant 6 does not contain adenosine monophosphate as the first barrier metal layer inhibitor, it etches away the barrier metal film made of molybdenum, molybdenum-titanium, molybdenum-niobium, or molybdenum-niobium-titanium. This confirms that when only the second barrier metal layer inhibitor is provided without the first barrier metal layer inhibitor, the barrier metal layer inhibitor cannot effectively shield the barrier metal film, resulting in the barrier metal film still being etched away.

[0084] Since etchant 7 does not contain polyethyleneimine as the second barrier metal layer inhibitor, it etches away the barrier metal film made of molybdenum, molybdenum-niobium, or molybdenum-niobium-titanium, and partially etches away the barrier metal film made of molybdenum-titanium. This confirms that when only the first barrier metal layer inhibitor is provided without the second barrier metal layer inhibitor, the barrier metal layer inhibitor cannot play an effective shielding role, resulting in the barrier metal film still being etched away.

[0085] Since the etchant 8 contains hydrogen fluoride, it etches away the shielding layer metal film made of molybdenum, molybdenum titanium, molybdenum niobium or molybdenum niobium titanium. This confirms that even when hydrogen fluoride is present, the shielding metal layer inhibitor cannot play an effective shielding role, resulting in the shielding layer metal film still being etched away.

[0086] According to the above, the etchant provided by the embodiment of the present invention contains the shielding metal layer inhibitor having two components, the content of each component is within an appropriate range, and does not contain fluoride, so that it only etches and removes the copper film during the etching process, and has a good shielding effect on the shielding metal film, thereby enabling its complete retention. That is, the etchant provided by the embodiment of the present invention has an excellent selective etching effect, and on the basis of effectively etching the copper film, it will not etch the shielding metal film made of molybdenum or molybdenum alloy.

[0087] Another embodiment of the present invention further provides a method for forming a metal layer, see Figure 3 , specifically including the following steps:

[0088] S10: providing a substrate, and sequentially forming a molybdenum-based barrier metal film and a copper-based film on the substrate;

[0089] S20: forming a photoresist on the copper film;

[0090] S30: patterning the copper film using the etchant composition under the shielding of the photoresist;

[0091] S40: Under the shielding of the photoresist, patterning the molybdenum-based shielding metal film using a dry etching process.

[0092] Combine as follows Figures 4a-4e To elaborate:

[0093] See also Figure 4a , providing a substrate 100, and sequentially forming a molybdenum-based barrier metal film 200 and a copper-based film 300 on the substrate 100;

[0094] See also Figure 4b , forming a photoresist 400 having a specific pattern on the copper film 300;

[0095] See also Figure 4c , under the shielding of the photoresist 400 , patterning the copper film 300 using the above-mentioned etchant composition to form a first metal sub-layer 300 a ;

[0096] See also Figure 4d , under the shielding of the photoresist 400, using a dry etching process to pattern the molybdenum-based barrier metal film 200 to form a second metal sub-layer 210, the first metal sub-layer 300a and the second metal sub-layer 210 are the formed metal layer;

[0097] See also Figure 4e , remove the photoresist 400.

[0098] In the method for forming a metal layer provided in an embodiment of the present invention, the etchant composition provided in the above embodiment is used to selectively etch only the copper film 300 to pattern it to form a first metal sublayer 300a, without etching the molybdenum-based shielding metal film 200. Therefore, in the process of patterning the copper film 300, the molybdenum-based shielding metal film 200 can shield and protect the underlying film layer, avoiding the problem of corrosion and damage caused by the etchant composition contacting other film layers located below the molybdenum-based shielding metal film 200; then, after patterning the copper film 300, dry etching is used to pattern the molybdenum-based shielding metal film 200 to complete the formation of the metal layer.

[0099] Another embodiment of the present invention provides a display panel, which includes a metal layer. The metal layer is obtained by the method for forming a metal layer provided in the above embodiment.

[0100] In some embodiments, the metal layer may be any metal film layer in the display panel. For example, the metal layer is a gate metal layer, or the metal layer is a source / drain metal layer.

[0101] It should be noted that the above display panel embodiment only describes the above structure. It can be understood that, in addition to the above structure, the display panel of the embodiment of the present invention may also include any other necessary structures as needed, such as a substrate, a buffer layer, an interlayer dielectric layer, etc., which are not specifically limited here.

[0102] Another embodiment of the present invention further provides a display device, which includes the display panel provided by the above embodiment. The display device includes but is not limited to a mobile phone, a smart watch, a tablet computer, a laptop computer, a television, etc.

[0103] The above is a detailed introduction to an etching agent composition, a method for forming a metal layer, and a display panel provided in an embodiment of the present invention. Specific examples are used herein to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea. At the same time, for those skilled in the art, according to the idea of ​​the present invention, there will be changes in the specific implementation methods and application scopes. In summary, the content of this specification should not be understood as limiting the present invention.

Claims

1. An etching agent composition, characterized in that The etchant composition is used for etching a metal film layer including a copper film layer and a molybdenum barrier metal layer, and comprises: hydrogen peroxide, an etching aid, a barrier metal layer inhibitor and water; The shielding metal layer inhibitor includes a first shielding metal layer inhibitor and a second shielding metal layer inhibitor, the first shielding metal layer inhibitor is selected from at least one of purine compounds, pyrimidine compounds and glycoside compounds, and the second shielding metal layer inhibitor is selected from at least one of ethyleneimine and polyethyleneimine; The etching aid includes a chelating agent; The mass percentage of the hydrogen peroxide is 5%-12%, the mass percentage of the chelating agent is 0.5%-3%, and the etchant composition does not contain fluoride.

2. The etching agent composition according to claim 1, characterized in that The first shielding metal layer inhibitor is selected from at least one of purine, adenine, guanine, pyrimidine, cytosine, uracil, thymine, adenylic acid, guanylic acid, cytidylic acid, guanylic acid, cytidylic acid, guanylic acid and thymidylic acid.

3. The etching agent composition according to claim 1, characterized in that The mass ratio of the first shielding metal layer inhibitor to the second shielding metal layer inhibitor in the shielding metal layer inhibitor is (2-5):

1.

4. The etching agent composition according to claim 1, characterized in that The mass percentage of the shielding metal layer inhibitor in the etchant composition is 0.01%-2%.

5. The etching agent composition according to claim 1, characterized in that The etchant composition further includes a stabilizer, and the stabilizer is selected from at least one sulfonic acid compound.

6. The etchant composition according to claim 5, characterized in that The mass percentage of the stabilizer in the etchant composition is 0.01%-5%.

7. The etchant composition according to claim 1, wherein The etching aid includes a corrosion inhibitor and an etching acid, wherein the chelating agent is at least one compound containing a chelating group, the chelating group is selected from a carboxyl group, a phosphate group or a silicate group, the corrosion inhibitor is selected from at least one azole compound, and the etching acid is selected from at least one carboxylic acid compound.

8. The etchant composition according to claim 7, wherein In the etchant composition, the mass percentage of the corrosion inhibitor is 0.005%-1%, and the mass percentage of the etching acid is 0.1%-4%.

9. A method for forming a metal layer, characterized in that: The method for forming the metal layer comprises the following steps: Providing a substrate, and sequentially forming a molybdenum-based barrier metal film and a copper-based film on the substrate; forming a photoresist on the copper film; Under the shielding of the photoresist, patterning the copper film using the etchant composition according to any one of claims 1 to 8; as well as Under the shielding of the photoresist, the molybdenum-based shielding metal film is patterned using a dry etching process.

10. A display panel, characterized in that: The display panel includes a metal layer, and the metal layer is obtained by the method for forming a metal layer according to claim 9.

Images