Process chamber mechanism of an atomic layer deposition apparatus

Abstract

The application discloses a process cavity mechanism of an atomic layer deposition equipment, which comprises a heating upper cover plate, a heating cylinder body and a heating lower cover plate. The heating lower cover plate is fixed on the bottom surface of the heating cylinder body and covers the bottom of the heating cylinder body. The top surface of the heating cylinder body is fixed with the heating upper cover plate and covers the top of the heating cylinder body. The bottom surface of the heating upper cover plate is installed with top heating wires. The top surface of the heating lower cover plate is fixed with bottom heating wires. The inner side wall of the heating cylinder body is installed with middle heating wires which are vertically spirally extended and coiled. The mechanism can process enough wafers in limited space, reduces the volume of the heating cylinder body and the space occupation. The vertical arrangement reduces the horizontal space occupation. The lower guide grooves arranged on the bottom surface of each tray can realize the gas guiding flow, so that the reaction source gas can quickly and uniformly flow through the wafer surface, and the uniformity and efficiency of the wafer film process are solved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor processing equipment, in particular to a process cavity mechanism of an atomic layer deposition equipment. BACKGROUND

[0002] Atomic layer deposition (ALD) is an advanced thin film preparation technology that can deposit the required substance on the target substrate in the form of a single atomic film. This process has the characteristics of high precision, high purity and high density, and therefore has wide application prospects in the fields of microelectronics, optics, biomedicine, etc.

[0003] The process cavity, which is the core of the ALD equipment, is a device for introducing reaction source gas and flowing to the surface of the wafer for deposition. The wafer is arranged in the process cavity. In order to improve the deposition efficiency of the wafer and increase the production capacity, a loading basket is generally used to hold multiple groups of carriers. The carriers are arranged horizontally and side by side in the loading basket, and the wafers are uniformly placed in the positioning grooves of the carriers to achieve the purpose of increasing production (wafers) in one cavity. The reaction source gas flows horizontally through the wafers on the carriers arranged side by side in the basket to improve the deposition efficiency and quality. Moreover, multiple loading baskets are generally placed horizontally in one process cavity. In order to facilitate the loading and unloading of the loading baskets, the spacing between adjacent two loading baskets is large. In order to ensure that all wafers can be contacted by the gas for reaction, it is necessary to ensure smooth flow of the gas, so that the gap between the process cavity and all the loading baskets needs to be large enough, and the volume of the entire process cavity needs to be large, which requires a large amount of reaction source gas to be introduced, increasing the equipment footprint and energy consumption. The reaction source gas flows horizontally through the wafers on the carriers, and the process cavity has a large horizontal flow resistance, resulting in poor uniformity of the gas flow through the wafer surface. When inert gas is purged into the gas structure, reaction source gas is easily left, and gas phase reaction occurs inside the gas inlet plate, generating contaminated particles. SUMMARY

[0004] The purpose of the present application is to overcome the shortcomings of the prior art and provide a process cavity mechanism of an atomic layer deposition equipment. The mechanism uniformly arranges multiple groups of vertically arranged wafers on the edge of a single loading basket, allowing a sufficient number of wafers to be processed in a limited space, reducing the volume of the heating cylinder, and reducing space occupation. Moreover, the vertical arrangement reduces the horizontal space occupation and improves the space utilization rate. The lower guide groove provided on the bottom surface of each tray can realize gas guiding flow, allowing the reaction source gas to flow quickly and uniformly through the wafer surface, solving the uniformity and efficiency problems of wafer thin film process.

[0005] The solution to the technical problem of the present application is as follows:

[0006] The process cavity mechanism of an atomic layer deposition device comprises a heating upper cover plate, a heating cylinder and a heating lower cover plate, the heating lower cover plate is fixed on the bottom surface of the heating cylinder and covers the bottom of the heating cylinder, the top surface of the heating cylinder is fixed with the heating upper cover plate and covers the top of the heating cylinder, the bottom surface of the heating upper cover plate is provided with top heating wires, the top surface of the heating lower cover plate is fixed with bottom heating wires, and the inner side wall of the heating cylinder is provided with middle heating wires extending in a vertical spiral shape and coiled.

[0007] The middle part of the heating upper cover plate is fixed with a connecting seat, the lower part of the connecting seat extends out of the bottom surface of the heating upper cover plate and is fixed with a wafer loading basket, the wafer loading basket is in a cylindrical shape, is inserted into the heating cylinder and cooperates with the heating cylinder, all the wafers are stacked in multiple groups of wafers and are installed at the edge of the wafer loading basket, all the groups of wafers are uniformly distributed at the edge of the wafer loading basket with the center axis of the wafer loading basket as the center, a gas inlet connecting pipe is inserted into the vertical through hole of the middle part of the connecting seat, the gas inlet connecting pipe is movably connected to the connecting seat through a bearing, the upper part of the gas inlet connecting pipe extends out of the top surface of the connecting seat, the middle part of the top plate of the gas inlet connecting pipe is provided with a gas inlet connecting head extending upward, the gas inlet connecting head communicates with the gas inlet connecting pipe, the bottom end of the gas inlet connecting pipe extends into the heating cylinder and communicates with the heating cylinder, and the middle part of the heating lower cover plate is formed with an air outlet through hole communicating with the heating cylinder.

[0008] The inner side wall of the heating cylinder is fixed with a heat preservation layer, the inner side wall of the heat preservation layer is fixed with a heating cylinder wall layer, the outer wall surface of the middle heating wires is close to or close to the inner side wall of the heating cylinder wall layer, the middle part of the middle heating wires is inserted into an isothermal layer, the outer side wall of the isothermal layer is close to the inner wall surface of the middle heating wires, the bottom surface of the heat preservation layer, the heating cylinder wall layer and the isothermal layer is fixed on the top surface of the heating lower cover plate, and the top surface of the heat preservation layer, the heating cylinder wall layer and the isothermal layer is pressed against or close to the bottom surface of the heating upper cover plate.

[0009] The wafer loading basket comprises a wafer bottom plate, a wafer top plate and a plurality of trays which are pressed against and aligned one above another.

[0010] All the trays are pressed against and clamped between the wafer bottom plate and the wafer top plate and are fixedly connected through a plurality of bolts.

[0011] The outer side wall of the tray is formed with a plurality of arc-shaped protruding parts, the top surface of the arc-shaped protruding part is formed with a circular placing groove to the edge top surface of the tray, the outer side of the circular placing groove extends out of the outer side wall of the arc-shaped protruding part, the wafer to be processed is inserted into the corresponding circular placing groove, and the bottom surface of the wafer is pressed against the bottom surface of the circular placing groove.

[0012] The bottom surface of the tray is formed with a plurality of lower air guide grooves, the lower air guide grooves are communicated with and above the corresponding circular placement grooves, the middle part of the tray is formed with a central through hole, the central through holes of all the trays are aligned and communicated, and the inner end of the lower air guide groove is communicated with the corresponding central through hole;

[0013] The outer end of the lower air guide groove extends outwardly beyond the outer side wall of the tray and the outer side wall of the corresponding arc-shaped protruding part, and the two inner side walls of the lower air guide groove extend outwardly and outwardly from the central axis of the tray.

[0014] The top surface of the tray top plate is formed with an upper mounting groove in the middle part, the bottom surface of the upper mounting groove is formed with a downwardly extending middle through hole, the bottom of the connecting seat is inserted into the upper mounting groove, the bottom surface of the connecting seat is pressed against the bottom surface of the upper mounting groove and fixedly connected by bolts, and the lower part of the gas inlet connecting pipe is inserted into the middle through hole.

[0015] The bottom surface of the tray top plate is formed with a plurality of first lower guide grooves, the inner end of the first lower guide groove is communicated with the lower groove, the outer end of the first lower guide groove extends outwardly beyond the outer side wall of the tray top plate, and the two inner side walls of the first lower guide groove extend outwardly and outwardly from the central axis of the tray top plate.

[0016] The outstanding effect of the present application is:

[0017] It uniformly arranges a plurality of vertically arranged wafers on the edge of a single loading basket, so that it can process enough wafers in a limited space, reduces the volume of the heating cylinder, reduces space occupation, and vertically arranged reduces horizontal space occupation, has high space utilization, and the lower guide groove provided on the bottom surface of each tray can realize gas guiding flow, so that the reaction source gas quickly and uniformly flows through the surface of the wafer, solving the uniformity and efficiency problem of wafer thin film process.

[0018] The top heating wire, middle heating wire and bottom heating wire of the process cavity composed of the heating upper cover plate, heating cylinder and heating lower cover plate can comprehensively and uniformly heat the entire process cavity.

[0019] The heating cylinder is provided with an isothermal layer, a middle heating wire, a heating cylinder wall layer and a heat preservation layer, the isothermal layer is made of high-purity quartz material, which can uniformly distribute the heat radiated by the heating wire on the quartz wall surface, and then uniformly radiate to the wafer, so as to eliminate the temperature gradient at each circumference and ensure the isothermal condition of the wafer at each place.

[0020] The heating cylinder wall layer is fixed by three annular stainless steel sheets with connecting screws, and has a spacing between each two adjacent stainless steel sheets, and the surface is mirror polished to uniformly reflect heat, and the three layers of stainless steel sheets with equal distance inside and outside can effectively and progressively reflect heat.

[0021] The heat preservation layer adopts nanoscale aerogel heat insulation material, and the low thermal conductivity and heat resistance of the material can effectively avoid the heat escaping from the reflection plate from being transmitted to the cavity through heat conduction, heat radiation and other ways, so as to make the temperature in the cavity fluctuate, and the heat preservation effect can be more effectively achieved, and the hardware guarantee for temperature control required by the internal process environment is provided. BRIEF DESCRIPTION OF DRAWINGS

[0022] Figure 1 is a partial structure schematic diagram of the application;

[0023] Figure 2 is a partial structure schematic diagram of the application with angle change;

[0024] Figure 3 is a partial structure schematic diagram of the application without heating cylinder and other components;

[0025] Figure 4 is a partial sectional view of the application;

[0026] Figure 5 is a partial enlarged view of Figure 4 ;

[0027] Figure 6 is a partial structure schematic diagram of the tray of the application;

[0028] Figure 7 is a partial structure schematic diagram of the application with angle change; Figure 6

[0029] Figure 8 is a partial structure schematic diagram of the heating upper cover plate;

[0030] Figure 9 is a schematic diagram of gas flow in the heating cylinder;

[0031] Figure 10 is a schematic diagram of thickness uniformity detection after processing of the application;

[0032] Figure 11 is a timing diagram of a cycle atomic layer process. DETAILED DESCRIPTION

[0033] Embodiment, see as Figures 1 to 9 ​As shown, a process cavity mechanism of an atomic layer deposition device includes a heating upper cover plate 10, a heating cylinder body 20 and a heating lower cover plate 30. The heating lower cover plate 30 is fixed on the bottom surface of the heating cylinder body 20 and covers the bottom of the heating cylinder body 20. The top surface of the heating cylinder body 20 is fixed with the heating upper cover plate 10 and covers the top of the heating cylinder body 20. The heating upper cover plate 10, the heating cylinder body 20 and the heating lower cover plate 30 are clamped and sealed by a clamping sealing ring to achieve clamping and sealing fixation. The bottom surface of the heating upper cover plate 10 is provided with a top heating wire 1. The top surface of the heating lower cover plate 30 is fixed with a bottom heating wire 3. The inner side wall of the heating cylinder body 20 is provided with a middle heating wire 2 extending in a vertical spiral shape.

[0034] The middle part of the heating upper cover plate 10 is provided with a connecting seat 11. An addition sealing ring is arranged between the connecting seat 11 and the heating upper cover plate 10 to achieve sealing connection. The lower part of the connecting seat 11 extends out of the bottom surface of the heating upper cover plate 10 and is fixed with a wafer loading basket 40. The wafer loading basket 40 is in a cylindrical shape and is inserted into the heating cylinder body 20 and cooperates with the heating cylinder body 20. All wafers 100 are stacked in multiple groups of wafers and are arranged at the edge of the wafer loading basket 40. All groups of wafers are uniformly distributed around the central axis of the wafer loading basket 40. A gas inlet connecting pipe 12 is inserted into the vertical through hole of the middle part of the connecting seat 11. The gas inlet connecting pipe 12 is movably connected to the connecting seat 11 through a bearing. A sealing ring is arranged between the outer side wall of the gas inlet connecting pipe 12 and the inner side wall of the vertical through hole of the middle part of the connecting seat 11 to achieve sealing connection. The upper part of the gas inlet connecting pipe 12 extends out of the top surface of the connecting seat 11. A gas inlet connecting head 13 extending upward is arranged in the middle part of the top plate of the gas inlet connecting pipe 12. The gas inlet connecting head 13 communicates with the gas inlet connecting pipe 12. The bottom end of the gas inlet connecting pipe 12 extends into the heating cylinder body 20 and communicates with the heating cylinder body 20. The middle part of the heating lower cover plate 30 is formed with an air outlet through hole 31. The air outlet through hole 31 communicates with the heating cylinder body 20.

[0035] Further, the inner side wall of the heating cylinder body 20 is fixed with a heat preservation layer 21 (nanoscale aerogel heat insulation material). The inner side wall of the heat preservation layer 21 is fixed with a heating cylinder wall layer 22 (the heating cylinder wall layer 22 is fixed by three annular stainless steel sheets through connecting screws. There is a spacing between each two adjacent stainless steel sheets. The details are not shown in the drawings and are only schematically shown). The outer wall surface of the middle heating wire 2 is close to or near the inner side wall of the heating cylinder wall layer 22. The middle part of the middle heating wire 2 is inserted with an isothermal layer 23 (high-purity quartz material). The outer side wall of the isothermal layer 23 is close to the inner wall surface of the middle heating wire 2. The bottom surface of the heat preservation layer 21, the heating cylinder wall layer 22 and the isothermal layer 23 is fixed on the top surface of the heating lower cover plate 30. The top surface of the heat preservation layer 21, the heating cylinder wall layer 22 and the isothermal layer 23 is pressed against or close to the bottom surface of the heating upper cover plate 10.

[0036] Further, the wafer tray loading basket 40 comprises a wafer tray bottom plate 41, a wafer tray top plate 42 and a plurality of trays 43 which are pressed and aligned from top to bottom;

[0037] All the trays 43 are pressed and clamped between the wafer tray bottom plate 41 and the wafer tray top plate 42 and are fixedly connected by a plurality of bolts.

[0038] The outer side wall of the tray 43 is formed with six arc-shaped protruding portions 431, and a circular placement groove 432 is formed on the top surface of the arc-shaped protruding portion 431 to the top surface of the side portion of the tray 43, the outer side of the circular placement groove 432 extends out of the outer side wall of the arc-shaped protruding portion 431, the wafer 100 to be processed is inserted into the corresponding circular placement groove 432, and the bottom surface of the wafer 100 is pressed against the bottom surface of the circular placement groove 432.

[0039] Further, the bottom surface of the tray 43 is formed with a plurality of lower air guiding grooves 433 which are communicated with and above the corresponding lower circular placement grooves 432, the middle portion of the tray 43 is formed with a central through hole 435, the central through holes 435 of all the trays 43 are aligned and communicated from top to bottom, and the inner end of the lower air guiding groove 433 is communicated with the corresponding central through hole 435.

[0040] All the arc-shaped protruding portions 431 and the lower air guiding grooves 433 of the tray 43 are uniformly distributed on the tray 43 with the central axis of the tray 43 as the center.

[0041] Further, the outer end of the lower air guiding groove 433 extends out of the outer side wall of the tray 43 and the outer side wall of the corresponding arc-shaped protruding portion 431, the two inner side walls of the lower air guiding groove 433 extend outwardly and outwardly from the central axis of the tray 43, and the inner ends of the two inner side walls are close to each other and the outer ends are far away from each other.

[0042] Further, the top surface of the wafer tray top plate 42 is formed with an upper mounting groove 421 in the middle portion, the bottom surface of the upper mounting groove 421 is formed with a downwardly extending middle portion through hole 422, the bottom portion of the connecting seat 11 is inserted into the upper mounting groove 421, the bottom surface of the connecting seat 11 is pressed against the bottom surface of the upper mounting groove 421 and is fixedly connected by a bolt, and the lower portion of the gas inlet connecting pipe 12 is inserted into the middle portion through hole 422.

[0043] Further, the bottom surface of the wafer tray top plate 42 is formed with a lower groove 423 in the middle portion, an arc-shaped wall surface is formed between the top portion of the inner side wall of the lower groove 423 and the top surface of the lower groove 423, the bottom end of the middle portion through hole 422 is communicated with the lower groove 423, the lower groove 423 is directly above and communicated with all the central through holes 435. The arc-shaped wall surface makes the flowing gas flow uniformly and smoothly, and is not easy to block.

[0044] Further, the bottom surface of the wafer tray top plate 42 is formed with a plurality of first lower guide grooves 425, the inner ends of the first lower guide grooves 425 are communicated with the lower grooves 423, the outer ends of the first lower guide grooves 425 extend out of the outer sidewall of the wafer tray top plate 42, and the two inner sidewalls of the first lower guide grooves 425 extend outwardly and outwardly from the center axis of the wafer tray top plate 42.

[0045] During operation of the embodiment, the reaction source gas enters from the gas inlet connector 13, the gas inlet connector 13 is located in the center position directly above the wafer loading basket 40, the gas is transmitted to the upper side of the wafer loading basket 40, and then reaches the surface of the wafer 100, thereby shortening the travel distance of the reaction source gas covering the deposition surface of the plurality of wafers 100. The bottom of the tray 43 is provided with a lower gas guiding groove 433 to guide the flow direction of the gas, so that the reaction source gas quickly and uniformly reaches the deposition surface of the wafer 100, thereby improving the production capacity.

[0046] As Figure 9 is a simulation of gas flow, it can be seen that the reaction source gas uniformly flows through the surface of the wafer 100 after entering from the gas inlet connector 13, and then is sucked away through the gas outlet through hole 31. The circumferentially distributed flow channel structure improves the uniformity of the gas flow distribution in the internal cavity of the process cavity composed of the heating upper cover plate, the heating cylinder body and the heating lower cover plate. The entire flow channel does not have any redundant space waste, can greatly shorten the single deposition process cycle, improve the efficiency of the entire deposition process, and provide hardware structure support for improving the production capacity.

[0047] Further, the top surface of the edge portion of the wafer tray bottom plate 41 is fixed with two positioning rods 4, the sidewall of the wafer tray top plate 41 and all the trays 43 are formed with two grooves, the corresponding grooves of all the trays 43 are aligned and corresponded, the grooves of the wafer tray top plate 41 are aligned and corresponded with the corresponding grooves of the trays 43, the positioning rods 4 are inserted into all the corresponding grooves, the screw connection portion of the top end of the positioning rod 4 extends out of the top surface of the groove of the wafer tray top plate 42 and is inserted with a gasket and a locking nut 5, and the gasket is clamped between the locking nut 5 and the top surface of the wafer tray top plate 42.

[0048] The loading basket 40 has a tray 43 and a positioning rod 4, the edge of each tray 43 has six circular placing grooves 432, each circular placing groove 432 is provided with a wafer 100, and each wafer 100 is provided with a lower gas guiding groove 433 or a first lower guiding groove 425. Due to the atomic layer deposition film, in addition to being deposited on the surface of the wafer, some thin films also need to be periodically disassembled and cleaned with multiple steps of wet cleaning. In the present application, the reaction source gas is diffused from the inside of the loading basket 40 to the outside, most of the reaction source gas can be effectively utilized, and the unreacted gas and byproduct gas are discharged from the bottom gas hole to ensure the clean environment inside the process chamber, and the wafer loading basket can be cleaned regularly, thereby solving the problem of cleaning the process chamber regularly and waiting for shutdown.

[0049] In the embodiment, the wafers 100 are arranged in a six-segment ring shape, which reduces the volume of the internal cavity of the process chamber composed of the heating upper cover plate, the heating cylinder and the heating lower cover plate, improves the utilization rate of the cavity, and has small equipment footprint and large number of loaded wafers.

[0050] In the embodiment, as an aluminum oxide process, the reaction source is trimethylaluminum and water, 20nm aluminum oxide film is deposited on a 100mm diameter silicon wafer at a deposition temperature of 250℃, and the thickness uniformity can reach 0.5%. The film thickness test is obtained by 9-point test of ellipsometer as shown in Figure 10

[0051] The small volume of the process chamber greatly shortens the time of introducing the reaction source and purging the process chamber, and one cycle time of the present application can be 5s, TMA is introduced for 0.5s, TMA is purged for 1.5s, H2O is introduced for 1s, and H2O is purged for 2s, as shown in Figure 11

[0052] As described above, the processing effect of the embodiment is good, the gas flowing on each wafer 100 is uniform and stable, and the deposition film uniformity is good.​​

Claims

1. A process cavity mechanism of an atomic layer deposition apparatus, comprising a heating upper cover plate (10), a heating cylinder (20) and a heating lower cover plate (30), the heating lower cover plate (30) is fixed on the bottom surface of the heating cylinder (20) and covers the bottom of the heating cylinder (20), the top surface of the heating cylinder (20) is fixed with the heating upper cover plate (10) and covers the top of the heating cylinder (20), characterized in that: The bottom surface of the heating upper cover plate (10) is provided with top heating wires (1), the top surface of the heating lower cover plate (30) is fixed with bottom heating wires (3), and the inner side wall of the heating cylinder (20) is provided with middle heating wires (2) extending vertically and spirally. The middle part of the heating upper cover plate (10) is fixed with a connecting seat (11), the lower part of the connecting seat (11) extends out of the bottom surface of the heating upper cover plate (10) and is fixed with a wafer loading basket (40), the wafer loading basket (40) is cylindrical, is inserted into the heating cylinder (20) and cooperates with the heating cylinder (20), all wafers (100) are stacked in multiple groups of wafer groups and are arranged at the edge of the wafer loading basket (40), all wafer groups are uniformly distributed around the central axis of the wafer loading basket (40), a gas inlet connecting pipe (12) is inserted into the vertical through hole of the middle part of the connecting seat (11), the gas inlet connecting pipe (12) is movably connected to the connecting seat (11) through a bearing, the upper part of the gas inlet connecting pipe (12) extends out of the top surface of the connecting seat (11), the top plate of the gas inlet connecting pipe (12) is provided with a gas inlet connecting head (13) extending upward, the gas inlet connecting head (13) communicates with the gas inlet connecting pipe (12), the bottom end of the gas inlet connecting pipe (12) extends into the heating cylinder (20) and communicates with the heating cylinder (20), and the middle part of the heating lower cover plate (30) is formed with an air outlet through hole (31) which communicates with the heating cylinder (20); The wafer loading basket (40) comprises a wafer bottom plate (41), a wafer top plate (42) and a plurality of trays (43) which are pressed and aligned one above another; All the trays (43) are pressed and clamped between the wafer bottom plate (41) and the wafer top plate (42) and are fixedly connected through a plurality of bolts; The outer side wall of the tray (43) is formed with a plurality of arc-shaped protruding portions (431), the top surface of the arc-shaped protruding portion (431) is formed with a circular placing groove (432) to the top surface of the edge of the tray (43), the outer side of the circular placing groove (432) extends out of the outer side wall of the arc-shaped protruding portion (431), the wafer (100) to be processed is inserted into the corresponding circular placing groove (432), and the bottom surface of the wafer (100) is pressed against the bottom surface of the circular placing groove (432); The bottom surface of the tray (43) is formed with a plurality of lower air guiding grooves (433), the lower air guiding grooves (433) communicate with and are above the corresponding lower circular placing grooves (432), the middle part of the tray (43) is formed with a central through hole (435), the central through holes (435) of all the trays (43) are aligned and communicated one above another, and the inner end of the lower air guiding groove (433) communicates with the corresponding central through hole (435); All the arc-shaped protruding portions (431) and the lower air guiding grooves (433) of the tray (43) are uniformly distributed on the tray (43) around the central axis of the tray (43). The top surface of the edge of the crystal tray bottom plate (41) is fixed with two positioning rods (4), the side wall of the crystal tray top plate (42) and all the trays (43) are formed with two grooves, the corresponding grooves of all the trays (43) are aligned and corresponded, the grooves of the crystal tray top plate (42) are aligned and corresponded with the corresponding grooves of the trays (43), the positioning rods (4) are inserted into all the corresponding grooves, the threaded part of the top end of the positioning rod (4) extends out of the top surface of the groove of the crystal tray top plate (42) and is inserted with a gasket and a locking nut (5), the gasket is clamped between the locking nut (5) and the top surface of the crystal tray top plate (42).

2. The process chamber mechanism of an atomic layer deposition apparatus according to claim 1, characterized by: The inner side wall of the heating cylinder (20) is fixed with a heat preservation layer (21), the inner side wall of the heat preservation layer (21) is fixed with a heating cylinder wall layer (22), the outer wall surface of the middle heating wire (2) is close to or close to the inner side wall of the heating cylinder wall layer (22), the middle heating wire (2) is inserted with an isothermal layer (23), the outer side wall of the isothermal layer (23) is close to the inner wall surface of the middle heating wire (2), the bottom surface of the heat preservation layer (21), the heating cylinder wall layer (22) and the isothermal layer (23) is fixed on the top surface of the lower heating cover plate (30), the top surface of the heat preservation layer (21), the heating cylinder wall layer (22) and the isothermal layer (23) is pressed or close to the bottom surface of the upper heating cover plate (10).

3. The process chamber mechanism of an atomic layer deposition apparatus according to claim 1, wherein: The outer end of the lower air guide groove (433) extends out of the outer side wall of the tray (43) and the outer side wall of the corresponding arc-shaped protruding part (431), the two inner side walls of the lower air guide groove (433) extend outwardly and outwardly with the center axis of the tray (43) as the center, the inner ends of the two inner side walls are close to each other, and the outer ends are far away from each other.

4. The process chamber according to claim 1, wherein: The top surface of the crystal tray top plate (42) is formed with an upper mounting groove (421) in the middle, the bottom surface of the upper mounting groove (421) is formed with a downward extending middle through hole (422), the bottom of the connecting seat (11) is inserted into the upper mounting groove (421), the bottom surface of the connecting seat (11) is pressed on the bottom surface of the upper mounting groove (421) and is fixedly connected by bolts, and the lower part of the air inlet connecting pipe (12) is inserted into the middle through hole (422).

5. The process chamber mechanism of an atomic layer deposition apparatus according to claim 4, wherein: The bottom surface of the crystal tray top plate (42) is formed with a lower groove (423) in the middle, an arc-shaped wall surface is formed between the top of the inner side wall of the lower groove (423) and the top surface of the lower groove (423), the bottom end of the middle through hole (422) communicates with the lower groove (423), and the lower groove (423) is directly above and communicates with all the center through holes (435).

6. The process chamber mechanism of an atomic layer deposition apparatus according to claim 4, wherein: The bottom surface of the crystal tray top plate (42) is formed with a plurality of first lower guide grooves (425), the inner end of the first lower guide groove (425) communicates with the lower groove (423), the outer end of the first lower guide groove (425) extends out of the outer side wall of the crystal tray top plate (42), and the two inner side walls of the first lower guide groove (425) extend outwardly and outwardly with the center axis of the crystal tray top plate (42) as the center. The inner ends of the two inner side walls are close to each other, and the outer ends are far away from each other.

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