Balun, push-pull power amplifier and RF front-end module

Abstract

The present invention discloses a balun, a push-pull power amplifier, and a radio frequency front-end module. The balun includes a first winding, a second winding, and a third winding. The first winding and the second winding are arranged on different metal layers, while the second winding and the third winding are arranged on the same metal layer. The second winding and a portion of the coils of the first winding are coupled to each other to form a first coupling region. The third winding and a portion of the coils of the first winding are coupled to each other to form a second coupling region. The formation of the first and second coupling regions in the balun significantly increases the coupling coefficient of the balun, reduces losses, and thereby improves the bandwidth, linearity, and efficiency of the circuit in which the balun is located.

Description

Technical Field

[0001] The present invention relates to the field of radio frequency circuit technology, and in particular to a balun, a push-pull power amplifier and a radio frequency front-end module. Background Art

[0002] The rapid development of mobile communications services is placing higher demands on high-efficiency, low-energy device design. Push-pull power amplifiers (PAs) are among the most energy-intensive modules in RF front-end modules. Therefore, their efficiency directly determines the overall energy consumption of the module. Improving their efficiency has become a hot topic in RF technology research. Existing PAs typically incorporate a balun. However, to minimize footprint, these baluns often incur significant losses. Therefore, balancing these concerns is a pressing issue. Summary of the Invention

[0003] The embodiments of the present invention provide a balun, a push-pull power amplifier, and a radio frequency front-end module to solve the problem that the existing balun cannot take both area and loss into consideration.

[0004] An embodiment of the present invention provides a balun, comprising a first winding, a second winding, and a third winding, wherein the first winding and the second winding are arranged on different metal layers, and the second winding and the third winding are arranged on the same metal layer;

[0005] Part of the coils of the second winding and the first winding are coupled to each other to form a first coupling region;

[0006] The third winding and part of the coils of the first winding are coupled to each other to form a second coupling region.

[0007] Preferably, projections of partial coils of the second winding and the first winding in the longitudinal direction at least partially overlap to form a first coupling region;

[0008] Projections of the third winding and partial coils of the first winding in the longitudinal direction at least partially overlap to form a second coupling region.

[0009] Preferably, a winding direction of the first winding in the first coupling region is opposite to a winding direction of the first winding in the second coupling region;

[0010] The winding direction of the second winding in the first coupling region is the same as the winding direction of the third winding in the second coupling region;

[0011] The winding direction of the first winding in the first coupling region is the direction of winding starting from the first connection end of the first winding, and the winding direction of the first winding in the second coupling region is the direction of winding starting from the second connection end of the first winding.

[0012] Preferably, the first winding is provided on a first metal layer;

[0013] The second winding and the third winding are arranged on a second metal layer;

[0014] The first winding includes a first winding winding portion, a winding connecting portion extending from the first winding winding portion, and a second winding winding portion extending from the winding connecting portion;

[0015] The second winding and the first winding winding portion are coupled to each other to form the first coupling region;

[0016] The third winding and the second winding winding portion are coupled to each other to form the second coupling region.

[0017] Preferably, projections of the second winding and the first winding winding portions in the longitudinal direction at least partially overlap to form a first coupling region;

[0018] Projections of the winding parts of the third winding and the second winding in the longitudinal direction at least partially overlap to form a second coupling region.

[0019] Preferably, the first winding includes a first coil, a second coil connected to the first coil, and a third coil, the first coil is arranged on a first metal layer, and the second coil and the third coil are arranged on a third metal layer;

[0020] The second winding and the third winding are arranged on a second metal layer, and the second metal layer is located between the first metal layer and the third metal layer;

[0021] The second winding, a partial coil of the first coil, and the second coil are coupled to each other to form a first coupling region;

[0022] The third winding, a partial coil of the first coil, and the third coil are coupled to each other to form the second coupling region.

[0023] Preferably, the first coil includes a first coil winding portion, a coil connecting portion extending from the first coil winding portion, and a second coil winding portion extending from the coil connecting portion;

[0024] The second winding, the first coil winding portion and the second coil are coupled to each other to form the first coupling region;

[0025] The third winding, the second coil winding portion, and the third coil are coupled to each other to form a second coupling region.

[0026] Preferably, projections of the second winding, the first coil winding portion and the second coil in the longitudinal direction at least partially overlap to form the first coupling region;

[0027] Projections of the third winding, the second coil winding portion, and the third coil in the longitudinal direction at least partially overlap to form the second coupling region.

[0028] Preferably, the first end of the first coil is connected to the first end of the second coil, the second end of the first coil is connected to the first end of the third coil, and the second end of the second coil and the second end of the third coil are two connection ends of the first winding.

[0029] Preferably, the second winding includes a fourth coil and a fifth coil, and the third winding includes a sixth coil and a seventh coil;

[0030] The fourth coil and the fifth coil are arranged on a first metal layer, the first winding is arranged on a second metal layer, the sixth coil and the seventh coil are arranged on a third metal layer, and the second metal layer is located between the first metal layer and the third metal layer;

[0031] The fourth coil, part of the coils of the first winding, and the sixth coil are coupled to each other to form the first coupling region;

[0032] The fifth coil, some coils of the first winding, and the seventh coil are coupled to each other to form the second coupling region.

[0033] Preferably, the first winding includes a first winding winding portion, a winding connecting portion extending from the first winding winding portion, and a second winding winding portion extending from the winding connecting portion;

[0034] The fourth coil, the first winding portion and the sixth coil are coupled to each other to form the first coupling region;

[0035] The fifth coil, the second winding portion, and the seventh coil are coupled to each other to form the second coupling region.

[0036] Preferably, projections of the fourth coil, the first winding portion and the sixth coil in the longitudinal direction at least partially overlap to form the first coupling region;

[0037] Projections of the fifth coil, the second winding portion, and the seventh coil in the longitudinal direction at least partially overlap to form the second coupling region.

[0038] Preferably, the second winding includes a fourth coil and a fifth coil, and the third winding includes a sixth coil and a seventh coil;

[0039] The fourth coil and the sixth coil are arranged on a first metal layer, the first winding is arranged on a second metal layer, the fifth coil and the seventh coil are arranged on a third metal layer, and the second metal layer is located between the first metal layer and the third metal layer;

[0040] The fourth coil, part of the coils of the first winding, and the seventh coil are coupled to each other to form the first coupling region;

[0041] The fifth coil, some coils of the first winding, and the sixth coil are coupled to each other to form the second coupling region.

[0042] Preferably, the first winding includes a first winding winding portion, a winding connecting portion extending from the first winding winding portion, and a second winding winding portion extending from the winding connecting portion;

[0043] The fourth coil, the first winding portion and the seventh coil are coupled to each other to form the first coupling region;

[0044] The fifth coil, the second winding portion, and the sixth coil are coupled to each other to form a second coupling region.

[0045] Preferably, projections of the fourth coil, the first winding portion and the seventh coil in the longitudinal direction at least partially overlap to form the first coupling region;

[0046] Projections of the fifth coil, the second winding portion, and the sixth coil in the longitudinal direction at least partially overlap to form the second coupling region.

[0047] Preferably, the two connection ends of the first winding are the input end and the ground end of the balun respectively, and the two connection ends of the second winding and the two connection ends of the third winding are the output ends of the balun;

[0048] Alternatively, the two connection ends of the first winding are the output end and the ground end of the balun respectively, and the two connection ends of the second winding and the two connection ends of the third winding are the input ends of the balun.

[0049] An embodiment of the present invention provides a push-pull power amplifier, comprising the above-mentioned balun, a first differential amplifier circuit, and a second differential amplifier circuit;

[0050] The first differential amplifier circuit is connected to the second winding;

[0051] The second differential amplifier circuit is connected to the third winding.

[0052] Preferably, the first differential amplifier circuit includes a first amplifier branch and a second amplifier branch; the first amplifier branch is connected to the first connection end of the second winding; the second amplifier branch is connected to the second connection end of the second winding;

[0053] The second differential amplifier circuit includes a third amplifier branch and a fourth amplifier branch; the third amplifier branch is connected to the first connection end of the third winding; and the fourth amplifier branch is connected to the second connection end of the third winding.

[0054] Preferably, the first amplifying branch comprises a first amplifying transistor, and the first amplifying transistor is connected to the first connection terminal of the second winding;

[0055] The second amplifying branch includes a second amplifying transistor, and the second amplifying transistor is connected to the second connection end of the second winding;

[0056] The third amplifying branch includes a third amplifying transistor, and the third amplifying transistor is connected to the first connection end of the third winding;

[0057] The fourth amplifying branch includes a fourth amplifying transistor, and the fourth amplifying transistor is connected to the second connection end of the third winding.

[0058] Preferably, the first amplifying branch further includes a first matching inductor, one end of the first matching inductor is connected to the first amplifying transistor, and the other end is connected to the first connection end of the second winding;

[0059] The second amplifying branch further includes a second matching inductor, one end of the second matching inductor is connected to the second amplifying transistor, and the other end is connected to the second connection end of the second winding;

[0060] The third amplifying branch further includes a third matching inductor, one end of the third matching inductor is connected to the third amplifying transistor, and the other end is connected to the first connection end of the third winding;

[0061] The fourth amplifying branch further includes a fourth matching inductor, one end of which is connected to the fourth amplifying transistor, and the other end of which is connected to the second connection end of the third winding.

[0062] Preferably, the first differential amplifier circuit further includes a first resonant circuit and a second resonant circuit; the second differential amplifier circuit includes a third resonant circuit and a fourth resonant circuit;

[0063] One end of the first resonant circuit is connected to the first amplifying branch, and the other end is grounded;

[0064] One end of the second resonant circuit is connected to the second amplifying branch, and the other end is grounded;

[0065] One end of the third resonant circuit is connected to the third amplifying branch, and the other end is grounded;

[0066] One end of the fourth resonant circuit is connected to the fourth amplifying branch, and the other end is grounded.

[0067] Preferably, one end of the first resonant circuit is connected to the connection node between the first amplifying transistor and the first matching inductor, and the other end is grounded; or, one end of the first resonant circuit is connected to the first connection end of the first matching inductor and the second winding, and the other end is grounded;

[0068] One end of the second resonant circuit is connected to the connection node between the second amplifying transistor and the second matching inductor, and the other end is grounded; or one end of the second resonant circuit is connected to the second connection end of the second matching inductor and the second winding, and the other end is grounded;

[0069] One end of the third resonant circuit is connected to the connection node between the third amplifying transistor and the third matching inductor, and the other end is grounded; or one end of the third resonant circuit is connected to the third matching inductor and the first connection end of the third winding, and the other end is grounded;

[0070] One end of the fourth resonant circuit is connected to the connection node between the fourth amplifying transistor and the fourth matching inductor, and the other end is grounded; or, one end of the fourth resonant circuit is connected to the fourth matching inductor and the second connection end of the third winding, and the other end is grounded.

[0071] Preferably, the first resonant circuit comprises a first capacitor and a first inductor, one end of the first capacitor is connected to the first amplifying branch, and the other end is grounded through the first inductor;

[0072] The second resonant circuit includes a second capacitor and a second inductor, one end of the second capacitor is connected to the second amplifying branch, and the other end is grounded through the second inductor;

[0073] The third resonant circuit includes a third capacitor and a third inductor, one end of the third capacitor is connected to the third amplifying branch, and the other end is grounded through the third inductor;

[0074] The fourth resonant circuit includes a fourth capacitor and a fourth inductor. One end of the fourth capacitor is connected to the fourth amplifying branch, and the other end is grounded through the fourth inductor.

[0075] Preferably, the midpoint of the second winding is connected to the power supply end, and the midpoint of the third winding is connected to the power supply end.

[0076] Preferably, the first amplifying branch further includes a first DC blocking capacitor and a first feeding circuit; the first DC blocking capacitor is arranged between the first amplifying transistor and the first connection end of the second winding; one end of the first feeding circuit is connected to the connection node between the first amplifying transistor and the first DC blocking capacitor, and the other end is connected to the power supply end;

[0077] The second amplifying branch further includes a second DC blocking capacitor and a second feeding circuit; the second DC blocking capacitor is arranged between the second amplifying transistor and the second connection end of the second winding; one end of the second feeding circuit is connected to the connection node between the second amplifying transistor and the second DC blocking capacitor, and the other end is connected to the power supply end;

[0078] The third amplifying branch further includes a third DC blocking capacitor and a third feeding circuit; the third DC blocking capacitor is arranged between the third amplifying transistor and the first connection end of the third winding; one end of the third feeding circuit is connected to the connection node between the third amplifying transistor and the third DC blocking capacitor, and the other end is connected to the power supply end;

[0079] The fourth amplifying branch also includes a fourth DC blocking capacitor and a fourth feeding circuit; the fourth DC blocking capacitor is arranged between the fourth amplifying transistor and the second connection end of the third winding; one end of the fourth feeding circuit is connected to the connection node between the fourth amplifying transistor and the fourth DC blocking capacitor, and the other end is connected to the power supply end.

[0080] An embodiment of the present invention provides a radio frequency front-end module, comprising a substrate, a first chip disposed on the substrate, and the above-mentioned push-pull power amplifier disposed on the substrate, wherein the first chip comprises a first differential amplifier circuit and a second differential amplifier circuit;

[0081] The first terminal of the first differential amplifier circuit is connected to the first pad of the first chip, and the first pad is connected to the first connection end of the second winding through a first bonding wire;

[0082] The second end of the first differential amplifier circuit is connected to the second pad of the first chip, and the second pad is connected to the second connection end of the second winding through a second bonding wire;

[0083] The first end of the second differential amplifier circuit is connected to the third pad of the first chip, and the third pad is connected to the first connection end of the third winding through a third bonding wire;

[0084] The second end of the second differential amplifier circuit is connected to the fourth pad of the first chip, and the fourth pad is connected to the second connection end of the third winding through a fourth bonding wire.

[0085] Preferably, the first chip further includes a first capacitor, a second capacitor, a third capacitor, and a fourth capacitor; the first differential amplifier circuit includes a first amplifier transistor and a second amplifier transistor, and the second differential amplifier circuit includes a third amplifier transistor and a fourth amplifier transistor;

[0086] A first end of the first capacitor is connected to the first amplifying transistor, a second end of the first capacitor is connected to a fifth pad of the first chip, and the fifth pad is grounded through a fifth bonding wire;

[0087] A first end of the second capacitor is connected to the second amplifying transistor, a second end of the second capacitor is connected to a sixth pad of the first chip, and the sixth pad is grounded through a sixth bonding wire;

[0088] A first end of the third capacitor is connected to the third amplifying transistor, a second end of the third capacitor is connected to a seventh pad of the first chip, and the seventh pad is grounded through a seventh bonding wire;

[0089] A first end of the fourth capacitor is connected to the fourth amplifying transistor, a second end of the fourth capacitor is connected to an eighth pad of the first chip, and the eighth pad is grounded through an eighth bonding wire.

[0090] Preferably, the first chip further includes a first capacitor, a second capacitor, a third capacitor, and a fourth capacitor; the first differential amplifier circuit includes a first amplifier transistor and a second amplifier transistor, and the second differential amplifier circuit includes a third amplifier transistor and a fourth amplifier transistor;

[0091] A first end of the first capacitor is grounded, a second end of the first capacitor is connected to a fifth pad of the first chip, and the fifth pad is connected to the first connection end of the second winding through a fifth bonding wire;

[0092] A first end of the second capacitor is grounded, a second end of the second capacitor is connected to a sixth pad of the first chip, and the sixth pad is connected to the second connection end of the second winding through a sixth bonding wire;

[0093] A first end of the third capacitor is grounded, a second end of the third capacitor is connected to a seventh pad of the first chip, and the seventh pad is connected to the first connection end of the third winding through a seventh bonding wire;

[0094] A first end of the fourth capacitor is grounded, a second end of the fourth capacitor is connected to an eighth pad of the first chip, and the eighth pad is connected to the second connection end of the third winding through an eighth bonding wire.

[0095] The above-mentioned balun, push-pull power amplifier and RF front-end module arrange the first winding, the second winding and the third winding in layers. By adjusting the positions of the first winding, the second winding and the third winding, the balun forms a first coupling area and a second coupling area. This can not only greatly improve the coupling coefficient of the balun and ensure the balance of the balun, but also reduce the loss while ensuring a small occupied area, thereby improving the bandwidth, linearity and efficiency of the circuit where the balun is located, and thus improving the bandwidth, linearity and efficiency of the push-pull power amplifier and the RF front-end module. BRIEF DESCRIPTION OF THE DRAWINGS

[0096] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments of the present invention. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0097] Figure 1 is a circuit diagram of a balun according to an embodiment of the present invention;

[0098] Figure 2 is another circuit diagram of a balun according to an embodiment of the present invention;

[0099] Figure 3 is another circuit diagram of a balun according to an embodiment of the present invention;

[0100] Figure 4 is another circuit diagram of a balun according to an embodiment of the present invention;

[0101] Figure 5 is a circuit diagram of a push-pull power amplifier according to an embodiment of the present invention;

[0102] Figure 6 is another circuit diagram of a push-pull power amplifier according to an embodiment of the present invention;

[0103] Figure 7 is another circuit diagram of a push-pull power amplifier according to an embodiment of the present invention;

[0104] Figure 8 is another circuit diagram of a push-pull power amplifier according to an embodiment of the present invention;

[0105] Figure 9 is another circuit diagram of a push-pull power amplifier according to an embodiment of the present invention;

[0106] Figure 10 is another circuit diagram of a push-pull power amplifier according to an embodiment of the present invention;

[0107] Figure 11is another circuit diagram of a push-pull power amplifier according to an embodiment of the present invention;

[0108] Figure 12 is another circuit diagram of a push-pull power amplifier according to an embodiment of the present invention;

[0109] Figure 13 is another circuit diagram of a push-pull power amplifier according to an embodiment of the present invention;

[0110] Figure 14 1 is a circuit diagram of a radio frequency front-end module according to an embodiment of the present invention;

[0111] Figure 15 is another circuit diagram of a radio frequency front-end module according to an embodiment of the present invention;

[0112] Figure 16 2 is another circuit diagram of the RF front-end module according to an embodiment of the present invention. DETAILED DESCRIPTION

[0113] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making any creative efforts shall fall within the scope of protection of the present invention.

[0114] It should be understood that the present invention can be embodied in various forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided to make the disclosure thorough and complete and to fully convey the scope of the invention to those skilled in the art. In the drawings, the dimensions and relative dimensions of layers and regions may be exaggerated for clarity. Like reference numerals denote like elements throughout.

[0115] It should be understood that when an element or layer is referred to as being "on," "adjacent to," "connected to," or "coupled to" another element or layer, it may be directly on, adjacent to, connected to, or coupled to the other element or layer, or there may be intervening elements or layers. Conversely, when an element is referred to as being "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" another element or layer, there may be no intervening elements or layers. It should be understood that although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, and / or parts, these elements, components, regions, layers, and / or parts should not be limited by these terms. These terms are merely used to distinguish one element, component, region, layer, or part from another element, component, region, layer, or part. Thus, a first element, component, region, layer, or part discussed below may be represented as a second element, component, region, layer, or part without departing from the teachings of the present invention.

[0116] Spatially relative terms such as "under," "beneath," "below," "under," "above," "above," etc., may be used herein for convenience of description to describe the relationship of one element or feature shown in the figures to other elements or features. It should be understood that the spatially relative terms are intended to include different orientations of the device in use and operation in addition to the orientations shown in the figures. For example, if the device in the drawings is flipped, then the elements or features described as "under" or "beneath" or "beneath" the other elements will be oriented as "over" the other elements or features. Thus, the exemplary terms "under" and "under" may include both the upper and lower orientations. The device may be oriented otherwise (rotated 90 degrees or in other orientations) and the spatial descriptors used herein are interpreted accordingly.

[0117] The purpose of the terms used herein is only to describe specific embodiments and is not intended to limit the present invention. When used herein, the singular forms "a", "an", and "the" are intended to include the plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "comprising" and / or "comprising", when used in this specification, determine the presence of the features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0118] In order to fully understand the present invention, detailed structures and steps will be presented in the following description to illustrate the technical solutions proposed by the present invention. Preferred embodiments of the present invention are described in detail below. However, in addition to these detailed descriptions, the present invention may also have other implementations.

[0119] The embodiment of the present invention provides a balun 1, such as Figure 1 and Figure 2 As shown, the balun 1 includes a first winding 11, a second winding 12 and a third winding 13. The first winding 11 and the second winding 12 are arranged on different metal layers, and the second winding 12 and the third winding 13 are arranged on the same metal layer; the second winding 12 and the partial coils of the first winding 11 are coupled to each other to form a first coupling region; the third winding 13 and the partial coils of the first winding 11 are coupled to each other to form a second coupling region.

[0120] The first winding 11, the second winding 12, and the third winding 13 are independently provided windings on the balun 1. The first winding 11 is a winding on the first side of the balun 1, while the second winding 12 and the third winding 13 are windings on the second side of the balun 1. As an example, the first winding 11 can be the primary winding of the balun 1, while the second winding 12 and the third winding 13 are the secondary windings of the balun 1; or, the second winding 12 and the third winding 13 are the primary windings of the balun 1, while the first winding 11 is the secondary winding of the balun 1.

[0121] As an example, the first winding 11 is a winding on the first side of the balun 1, while the second winding 12 and the third winding 13 are windings on the second side of the balun 1. The second winding 12 and the third winding 13 can be arranged on the same metal layer to ensure the balance of the balun 1. Correspondingly, the first winding 11 and the second winding 12 are arranged on different metal layers. In this case, the first winding 11 and the third winding 13 are also arranged on different metal layers. It can be understood that arranging the first winding 11 and the second winding 12 on different metal layers and the first winding 11 and the third winding 13 on different metal layers allows the first winding 11 to couple with both the second winding 12 and the third winding 13, thereby improving the coupling of the balun. Arranging the second winding 12 and the third winding 13 on the same metal layer can ensure the balance of the circuit.

[0122] In this embodiment, because the second winding 12 and the first winding 11 are arranged on different metal layers, the partial coils of the second winding 12 and the first winding 11 are coupled to each other, forming a first coupling region. This first coupling region can be understood as the coupling region corresponding to the parallel plate capacitor formed between the partial coils of the second winding 12 and the first winding 11, which can ensure the coupling coefficient between the second winding 12 and the partial coils of the first winding 11. Correspondingly, because the third winding 13 and the first winding 11 are arranged on different metal layers, the partial coils of the third winding 13 and the first winding 11 are coupled to each other, forming a second coupling region. This second coupling region can be understood as the coupling region corresponding to the parallel plate capacitor formed between the third winding 13 and the partial coils of the first winding 11, which can ensure the coupling coefficient between the third winding 13 and the partial coils of the first winding 11. It can be understood that the first winding 11, the second winding 12 and the third winding 13 are arranged in layers, and by adjusting the positions of the first winding 11, the second winding 12 and the third winding 13, the balun 1 forms a first coupling area and a second coupling area. This can not only greatly improve the coupling coefficient of the balun 1 and ensure the balance of the balun, but also reduce the loss while ensuring a small occupied area, thereby improving the bandwidth, linearity and efficiency of the circuit where the balun 1 is located.

[0123] In one embodiment, if Figure 1 and Figure 2 As shown, the projections of the second winding 12 and the partial coils of the first winding 11 in the longitudinal direction at least partially overlap to form a first coupling area; the projections of the third winding 13 and the partial coils of the first winding 11 in the longitudinal direction at least partially overlap to form a second coupling area.

[0124] As an example, the second winding 12 and the first winding 11 are arranged on different metal layers, and the projections of the partial coils of the second winding 12 and the first winding 11 in the longitudinal direction at least partially overlap, that is, the partial coils of the second winding 12 and the first winding 11 are parallel in the longitudinal direction, forming a coupling area of ​​a parallel plate capacitor, which is determined as the first coupling area. The existence of the first coupling area can ensure the coupling coefficient between the second winding 12 and the first winding 11.

[0125] As an example, the third winding 13 and the first winding 11 are arranged on different metal layers, and the projections of the partial coils of the third winding 13 and the first winding 11 in the longitudinal direction at least partially overlap, that is, the partial coils of the third winding 13 and the first winding 11 are parallel in the longitudinal direction, forming another coupling area of ​​the parallel plate capacitor, which is determined as the second coupling area. The existence of the second coupling area can ensure the coupling coefficient between the third winding 13 and the first winding 11.

[0126] Since the balun includes a first winding 11, a second winding 12 and a third winding 13, the three windings are coupled to form two coupling regions, which can greatly improve the coupling coefficient of the balun 1 and reduce the loss while ensuring a small occupied area, thereby improving the bandwidth, linearity and efficiency of the circuit in which the balun 1 is located.

[0127] In one embodiment, the winding direction of the first winding 11 in the first coupling region is opposite to the winding direction of the first winding 11 in the second coupling region; the winding direction of the second winding 12 in the first coupling region is the same as the winding direction of the third winding 13 in the second coupling region; wherein, the winding direction of the first winding 11 in the first coupling region is the direction of winding starting from the first connection end of the first winding 11, and the winding direction of the first winding 11 in the second coupling region is the direction of winding starting from the second connection end of the first winding 11.

[0128] The first connection end and the second connection end of the first winding 11 are the connection ends for connecting the first winding 11 to an external circuit. Since a portion of the coils of the first winding 11 will be coupled with the second winding 12 to form a first coupling region, and a portion of the coils of the first winding 11 will be coupled with the third winding 13 to form a second coupling region, the winding direction of the first winding 11 in the first coupling region can be determined as the direction starting from the first connection end of the first winding 11, and the winding direction of the first winding 11 in the second coupling region can be determined as the direction starting from the second connection end of the first winding 11. The winding direction of the second winding 12 in the first coupling region is the direction from the first connection end to the second connection end of the second winding 12, and the winding direction of the third winding 13 in the second coupling region is the direction from the first connection end to the second connection end of the third winding 13.

[0129] As an example, the winding direction of the first winding 11 in the first coupling region is opposite to the winding direction of the first winding 11 in the second coupling region, and the winding direction of the second winding 12 in the first coupling region is the same as the winding direction of the third winding 13 in the second coupling region, so as to ensure the realization of the basic function of balun 1.

[0130] In one embodiment, if Figure 1 As shown, the first winding 11 is arranged on the first metal layer 14; the second winding 12 and the third winding 13 are arranged on the second metal layer 15; the first winding 11 includes a first winding winding portion 111, a winding connecting portion 112 extending from the first winding winding portion 111 and a second winding winding portion 113 extending from the winding connecting portion 112; the second winding 12 and the first winding winding portion 111 are coupled to each other to form a first coupling area; the third winding 13 and the second winding winding portion 113 are coupled to each other to form a second coupling area.

[0131] The first winding portion 111 and the second winding portion 113 are integrally connected to the first winding 11 and are coupled to the second winding 12 and the third winding 13. The winding connection portion 112 is used to connect the first winding portion 111 and the second winding portion 113.

[0132] As an example, the balun 1 can be a two-layer structure, that is, the balun 1 is provided on the first metal layer 14 and the second metal layer 15. In this example, the first winding 11 can be provided on the first metal layer 14, and the second winding 12 and the third winding 13 can be provided on the second metal layer 15. In this case, the first winding 11 can be an integrated structure, such as Figure 1 As shown, the first winding 11 includes a first winding winding portion 111, a winding connecting portion 112 extending from the first winding winding portion 111 and a second winding winding portion 113 extending from the winding connecting portion 112, that is, the first winding winding portion 111, the winding connecting portion 112 and the second winding winding portion 113 form an integrated structure.

[0133] In this example, when the first winding 11 is an integrated structure, the first winding winding portion 111 provided on the first metal layer 14 and the second winding 12 provided on the second metal layer 15 are coupled to each other to form a coupling region of a parallel plate capacitor, namely, a first coupling region. Correspondingly, the second winding winding portion 113 provided on the second metal layer 15 and the third winding 13 provided on the second metal layer 15 are coupled to each other to form another coupling region of a parallel plate capacitor, namely, a second coupling region. In this example, the first winding winding portion 111 and the second winding winding portion 113 on the first metal layer 14 are respectively coupled with the second winding 12 and the third winding 13 on the second metal layer 15 to form two coupling regions, thereby ensuring the coupling coefficient of the balun 1 and thereby improving the bandwidth, linearity, and efficiency of the circuit in which the balun 1 is located.

[0134] In one embodiment, the projections of the second winding 12 and the first winding winding portion 111 in the longitudinal direction at least partially overlap to form a first coupling region; the projections of the third winding 13 and the second winding winding portion 113 in the longitudinal direction at least partially overlap to form a second coupling region.

[0135] As an example, since the second winding 12 is disposed on the second metal layer 15 and the first winding portion 111 is disposed on the first metal layer 14, when the projections of the second winding 12 and the first winding portion 111 in the longitudinal direction at least partially overlap, at least portions of the coils of the second winding 12 and the first winding portion 111 are parallel to each other, forming a coupling region of a parallel plate capacitor, which is defined as a first coupling region. Accordingly, the third winding 13 is disposed on the second metal layer 15 and the second winding portion 113 is disposed on the first metal layer 14. When the projections of the third winding 13 and the second winding portion 113 in the longitudinal direction at least partially overlap, at least portions of the coils of the third winding 13 and the second winding portion 113 are parallel to each other, forming a coupling region of a parallel plate capacitor, which is defined as a second coupling region. In this example, the two winding parts of the first winding 11 on the first metal layer 14 are at least partially overlapped with the projections of the second winding 12 and the third winding 13 on the second metal layer 15 in the longitudinal direction, forming two coupling regions, thereby ensuring the coupling coefficient of the balun 1 and thereby improving the bandwidth, linearity and efficiency of the circuit in which the balun 1 is located.

[0136] In one embodiment, if Figure 2 As shown, the first winding 11 includes a first coil 114, a second coil 115 connected to the first coil 114, and a third coil 116. The first coil 114 is arranged on the first metal layer 14, and the second coil 115 and the third coil 116 are arranged on the third metal layer 16; the second winding 12 and the third winding 13 are arranged on the second metal layer 15, and the second metal layer 15 is located between the first metal layer 14 and the third metal layer 16; the second winding 12, a partial coil of the first coil 114 and the second coil 115 are coupled to each other to form a first coupling region; the third winding 13, a partial coil of the first coil 114 and the third coil 116 are coupled to each other to form a second coupling region.

[0137] The first coil 114, the second coil 115, and the third coil 116 are respectively the three coils in the split first winding 11. In this example, the first winding 11 includes the split first coil 114, the second coil 115, and the third coil 116. The first coil 114 is disposed on the first metal layer 14, while the second coil 115 and the third coil 116 are disposed on the third metal layer 16. The first and third metal layers 14 and 16 are electrically connected to ensure the normal operation of the first winding 11. The second winding 12 and the third winding 13 are disposed on the second metal layer 15, which is located between the first and third metal layers 14 and 16. The first coil 114 is disposed on the first metal layer 14, and the second coil 115 and the third coil 116 are disposed on the third metal layer 16.

[0138] As an example, because the second metal layer 15 is located between the first metal layer 14 and the third metal layer 16, the second winding 12 on the second metal layer 15, the partial coil of the first coil 114 on the first metal layer 14, and the second coil 115 on the third metal layer 16 are mutually coupled. In other words, the partial coil of the first coil 114, the second winding 12, and the second coil 115 are mutually coupled to form a first coupling region. It can be understood that when the second metal layer 15 is located between the first metal layer 14 and the third metal layer 16, the second winding 12 on the second metal layer 15 and the partial coil of the first coil 114 on the first metal layer 14 are mutually coupled, and the second winding 12 on the second metal layer 15 and the second coil 115 on the third metal layer 16 are mutually coupled. This double coupling improves the coupling effect, ensures the coupling coefficient of the balun 1, and thereby improves the bandwidth, linearity, and efficiency of the circuit in which the balun 1 is located.

[0139] As an example, because the second metal layer 15 is located between the first metal layer 14 and the third metal layer 16, the third winding 13 on the second metal layer 15, the partial coil of the first coil 114 on the first metal layer 14, and the third coil 116 on the third metal layer 16 are mutually coupled. In other words, the partial coil of the first coil 114, the third winding 13, and the third coil 116 are mutually coupled to form a second coupling region. It can be understood that when the second metal layer 15 is located between the first metal layer 14 and the third metal layer 16, the third winding 13 on the second metal layer 15 and the partial coil of the first coil 114 on the first metal layer 14 are mutually coupled, and the third winding 13 on the second metal layer 15 and the third coil 116 on the third metal layer 16 are mutually coupled. This double coupling improves the coupling effect, ensures the coupling coefficient of the balun 1, and thereby improves the bandwidth, linearity, and efficiency of the circuit in which the balun 1 is located.

[0140] In one embodiment, if Figure 2 As shown, the first coil 114 includes a first coil winding portion 1141, a coil connecting portion 1142 extending from the first coil winding portion 1141, and a second coil winding portion 1143 extending from the coil connecting portion 1142; the second winding 12, the first coil winding portion 1141 and the second coil 115 are coupled to each other to form a first coupling area; the third winding 13, the second coil winding portion 1143 and the third coil 116 are coupled to each other to form a second coupling area.

[0141] The first coil winding portion 1141 and the second coil winding portion 1143 are the portions of the integrated first coil 114 that are coupled to the second winding 12 and the third winding 13. The coil connecting portion 1142 is the portion used to connect the first coil winding portion 1141 and the second coil winding portion 1143.

[0142] As an example, the first coil 114 located on the first metal layer 14 includes a first coil winding portion 1141, a coil connecting portion 1142 extending from the first coil winding portion 1141, and a second coil winding portion 1143 extending from the coil connecting portion 1142, that is, the first coil winding portion 1141, the coil connecting portion 1142 and the second coil winding portion 1143 are formed as one piece.

[0143] As an example, the second winding 12 located in the second metal layer 15, the first coil winding portion 1141 located on the first metal layer 14, and the second coil 115 located in the third metal layer 16 are coupled to form a first coupling region to ensure the coupling coefficient of the first coupling region. In this example, the second winding 12 located in the second metal layer 15 and the first coil winding portion 1141 located on the first metal layer 14 are coupled to each other, and the second winding 12 located in the second metal layer 15 and the second coil 115 located on the third metal layer 16 are coupled to each other, making the coupling coefficient of the three-layer structure higher than the coupling coefficient of the two-layer structure, which can ensure the coupling coefficient of the ultimately formed first coupling region, thereby improving the bandwidth, linearity, and efficiency of the circuit in which the balun 1 is located.

[0144] As an example, the third winding 13 located in the second metal layer 15, the second coil winding portion 1143 located on the first metal layer 14, and the third coil 116 located in the third metal layer 16 are coupled to form a second coupling region to ensure the coupling coefficient of the second coupling region. In this example, the third winding 13 located in the second metal layer 15 and the second coil winding portion 1143 located on the first metal layer 14 are coupled to each other, and the third winding 13 located in the second metal layer 15 and the third coil 116 located on the third metal layer 16 are coupled to each other, making the coupling coefficient of the three-layer structure higher than the coupling coefficient of the two-layer structure, which can ensure the coupling coefficient of the ultimately formed second coupling region, thereby improving the bandwidth, linearity, and efficiency of the circuit in which the balun 1 is located.

[0145] In one embodiment, if Figure 2 As shown, the projections of the second winding 12, the first coil winding portion 1141 and the second coil 115 in the longitudinal direction at least partially overlap to form a first coupling area; the projections of the third winding 13, the second coil winding portion 1143 and the third coil 116 in the longitudinal direction at least partially overlap to form a second coupling area.

[0146] As an example, the second winding 12 located in the second metal layer 15, the first coil winding portion 1141 located on the first metal layer 14, and the second coil 115 located in the third metal layer 16 have at least partially overlapping projections in the longitudinal direction, so that the second winding 12 is arranged parallel to and opposite to the first coil winding portion 1141, generating a coupling effect, and is also arranged parallel to and opposite to the second coil 115, generating a coupling effect, thereby coupling the three to form a coupling region of a parallel plate capacitor, which is determined as the first coupling region to ensure the coupling coefficient of the first coupling region. In this example, the second winding 12 located in the second metal layer 15 and the first coil winding portion 1141 located on the first metal layer 14 have at least partially overlapping projections in the longitudinal direction, and the second winding 12 located in the second metal layer 15 and the second coil 115 located on the third metal layer 16 have at least partially overlapping projections in the longitudinal direction, so that the coupling coefficient of the three-layer structure is higher than that of the two-layer structure, which can ensure the coupling coefficient of the ultimately formed first coupling region, thereby improving the bandwidth, linearity, and efficiency of the circuit in which the balun 1 is located.

[0147] As an example, the projections of the third winding 13 in the second metal layer 15, the second coil winding portion 1143 on the first metal layer 14, and the third coil 116 in the third metal layer 16 in the longitudinal direction at least partially overlap, so that the third winding 13 is arranged parallel to and opposite to the second coil winding portion 1143, generating a coupling effect, and is also arranged parallel to and opposite to the third coil 116, generating a coupling effect, thereby coupling the three to form a coupling region of a parallel plate capacitor, which is determined as the second coupling region to ensure the coupling coefficient of the second coupling region. In this example, the projections of the third winding 13 in the second metal layer 15 and the second coil winding portion 1143 on the first metal layer 14 in the longitudinal direction at least partially overlap, and the projections of the third winding 13 in the second metal layer 15 and the third coil 116 on the third metal layer 16 in the longitudinal direction at least partially overlap, so that the coupling coefficient of the three-layer structure is higher than that of the two-layer structure, which can ensure the coupling coefficient of the ultimately formed second coupling region, thereby improving the bandwidth, linearity, and efficiency of the circuit in which the balun 1 is located.

[0148] In one embodiment, if Figure 2 As shown, the first end of the first coil 114 is connected to the first end of the second coil 115 , the second end of the first coil 114 is connected to the first end of the third coil 116 , and the second end of the second coil 115 and the second end of the third coil 116 are the two connection ends of the first winding 11 .

[0149] As an example, in the first winding 11, the first coil 114 disposed on the first metal layer 14 is connected to both the second coil 115 on the third metal layer 16 and the third coil 116 on the third metal layer 16 to ensure the basic functionality of the first winding 11. In this example, the first end of the first coil 114 on the first metal layer 14 is connected to the first end of the second coil 115 on the third metal layer 16, and the second end of the first coil 114 on the first metal layer 14 is connected to the first end of the third coil 116 on the third metal layer 16. This makes the second end of the second coil 115 and the second end of the third coil 116 serve as the two connection ends of the first winding 11, namely, the first connection end and the second connection end of the first winding 11, respectively. Since the first coil 114 is located on the first metal layer 14, and the second coil 115 and the third coil 116 are located on the third metal layer 16, solder pads need to be provided on the first metal layer 14 and the third metal layer 16. The solder pads are used to connect the first coil 114 to the second coil 115 and the third coil 116 respectively, so that the two connection ends of the first winding 11 can be connected to other circuits, thereby ensuring the basic functions of the first winding 11 are realized.

[0150] In one embodiment, if Figure 3 As shown, the second winding 12 includes a fourth coil 121 and a fifth coil 122 , and the third winding 13 includes a sixth coil 131 and a seventh coil 132 ;

[0151] The fourth coil 121 and the fifth coil 122 are arranged on the first metal layer 14, the first winding 11 is arranged on the second metal layer 15, the sixth coil 131 and the seventh coil 132 are arranged on the third metal layer 16, and the second metal layer 15 is located between the first metal layer 14 and the third metal layer 16;

[0152] The fourth coil 121, part of the coils of the first winding 11 and the sixth coil 131 are coupled to each other to form a first coupling region;

[0153] The fifth coil 122 , some coils of the first winding 11 , and the seventh coil 132 are coupled to each other to form a second coupling region.

[0154] The fourth coil 121 and the fifth coil 122 are two coils in the split second winding 12 , and the sixth coil 131 and the seventh coil 132 are two coils in the split third winding 13 .

[0155] As an example, the second winding 12 includes a fourth coil 121 and a fifth coil 122 of separate designs, and the fourth coil 121 and the fifth coil 122 are arranged on the first metal layer 14; the third winding 13 includes a sixth coil 131 and a seventh coil 132 of separate designs, and the sixth coil 131 and the seventh coil 132 are arranged on the third metal layer 16; the first winding 11 is an integrated winding, and the first winding 11 is arranged on the second metal layer 15, and the second metal layer 15 is located between the first metal layer 14 and the third metal layer 16, so that the three windings are respectively arranged between the three metal layers.

[0156] As an example, because the second metal layer 15 is located between the first metal layer 14 and the third metal layer 16, the fourth coil 121 on the first metal layer 14, the partial coil of the first winding 11 on the second metal layer 15, and the sixth coil 131 on the third metal layer 16 are coupled to each other, forming a first coupling region. Understandably, when the second metal layer 15 is located between the first metal layer 14 and the third metal layer 16, the fourth coil 121 on the first metal layer 14 and the partial coil of the first winding 11 on the second metal layer 15 are coupled to each other, and the partial coil of the first winding 11 on the second metal layer 15 and the sixth coil 131 on the third metal layer 16 are coupled to each other. This dual coupling improves the coupling effect, ensures the coupling coefficient of the balun 1, and thereby improves the bandwidth, linearity, and efficiency of the circuit in which the balun 1 is located.

[0157] As an example, because the second metal layer 15 is located between the first metal layer 14 and the third metal layer 16, the fifth coil 122 on the first metal layer 14, the partial coil of the first winding 11 on the second metal layer 15, and the seventh coil 132 on the third metal layer 16 are coupled to each other, forming a second coupling region. Understandably, when the second metal layer 15 is located between the first metal layer 14 and the third metal layer 16, the fifth coil 122 on the first metal layer 14 and the partial coil of the first winding 11 on the second metal layer 15 are coupled to each other, and the partial coil of the first winding 11 on the second metal layer 15 and the seventh coil 132 on the third metal layer 16 are coupled to each other. This dual coupling improves the coupling effect, ensures the coupling coefficient of the balun 1, and thereby improves the bandwidth, linearity, and efficiency of the circuit in which the balun 1 is located.

[0158] In one embodiment, if Figure 3 As shown, the first winding 11 includes a first winding winding portion 111, a winding connecting portion 112 extending from the first winding winding portion 111, and a second winding winding portion 113 extending from the winding connecting portion 112; the fourth coil 121, the first winding winding portion 111 and the sixth coil 131 are coupled to each other to form a first coupling area; the fifth coil 122, the second winding winding portion 113 and the seventh coil 132 are coupled to each other to form a second coupling area.

[0159] The first winding portion 111 and the second winding portion 113 are integrally connected to the first winding 11 and are coupled to the second winding 12 and the third winding 13. The winding connection portion 112 is used to connect the first winding portion 111 and the second winding portion 113.

[0160] When the first winding 11 is an integrated structure, the fourth coil 121 on the first metal layer 14, the first winding portion 111 on the second metal layer 15, and the sixth coil 131 on the third metal layer 16 are coupled to each other, forming a first coupling region. Specifically, the fourth coil 121 and the first winding portion 111 are coupled to each other, and the first winding portion 111 and the sixth coil 131 are coupled to each other, forming a first coupling region with multiple coupling. Correspondingly, the fifth coil 122 on the first metal layer 14, the second winding portion 113 on the second metal layer 15, and the seventh coil 132 on the third metal layer 16 are coupled to each other, forming a second coupling region with multiple coupling. Specifically, the fifth coil 122 and the second winding portion 113 are coupled to each other, and the second winding portion 113 and the seventh coil 132 are coupled to each other, forming a second coupling region with multiple coupling. In this example, both the first coupling region and the second coupling region achieve multiple coupling, ensuring the coupling coefficient of balun 1, thereby improving the bandwidth, linearity, and efficiency of the circuit in which balun 1 is located.

[0161] In one embodiment, if Figure 3 As shown, the projections of the fourth coil 121, the first winding winding portion 111 and the sixth coil 131 in the longitudinal direction at least partially overlap to form a first coupling area; the projections of the fifth coil 122, the second winding winding portion 113 and the seventh coil 132 in the longitudinal direction at least partially overlap to form a second coupling area.

[0162] As an example, the fourth coil 121 is arranged on the first metal layer 14, the first winding winding portion 111 is arranged on the second metal layer 15, and the sixth coil 131 is arranged on the third metal layer 16. When the projections of the fourth coil 121, the first winding winding portion 111 and the sixth coil 131 in the longitudinal direction at least partially overlap, the fourth coil 121 and the first winding winding portion 111 are coupled to each other, and the first winding winding portion 111 and the sixth coil 131 are coupled to each other to form a multi-coupled first coupling area, which can ensure the coupling coefficient of the balun 1, thereby improving the bandwidth, linearity and efficiency of the circuit in which the balun 1 is located. Correspondingly, the fifth coil 122 is arranged on the first metal layer 14, the second winding winding portion 113 is arranged on the second metal layer 15, and the seventh coil 132 is arranged on the third metal layer 16. When the projections of the fifth coil 122, the second winding winding portion 113 and the seventh coil 132 in the longitudinal direction at least partially overlap, the fifth coil 122 and the second winding winding portion 113 are coupled to each other, and the second winding winding portion 113 and the seventh coil 132 are coupled to each other to form a multi-coupled second coupling area, which can ensure the coupling coefficient of the balun 1, thereby improving the bandwidth, linearity and efficiency of the circuit in which the balun 1 is located.

[0163] In one embodiment, if Figure 4 As shown, the second winding 12 includes a fourth coil 121 and a fifth coil 122, and the third winding 13 includes a sixth coil 131 and a seventh coil 132; the fourth coil 121 and the sixth coil 131 are arranged on the first metal layer 14, the first winding 11 is arranged on the second metal layer 15, the fifth coil 122 and the seventh coil 132 are arranged on the third metal layer 16, and the second metal layer 15 is located between the first metal layer 14 and the third metal layer 16; the fourth coil 121, part of the coil of the first winding 11 and the seventh coil 132 are coupled to each other to form a first coupling region; the fifth coil 122, part of the coil of the first winding 11 and the sixth coil 131 are coupled to each other to form a second coupling region.

[0164] The fourth coil 121 and the fifth coil 122 are two coils in the split second winding 12 , and the sixth coil 131 and the seventh coil 132 are two coils in the split third winding 13 .

[0165] As an example, the second winding 12 includes a fourth coil 121 and a fifth coil 122 of separate designs, and the fourth coil 121 and the sixth coil 131 are arranged on the first metal layer 14; the third winding 13 includes a sixth coil 131 and a seventh coil 132 of separate designs, and the fifth coil 122 and the seventh coil 132 are arranged on the third metal layer 16; the first winding 11 is an integrated winding, and the first winding 11 is arranged on the second metal layer 15, and the second metal layer 15 is located between the first metal layer 14 and the third metal layer 16, so that the three windings are respectively arranged between the three metal layers.

[0166] As an example, because the second metal layer 15 is located between the first metal layer 14 and the third metal layer 16, the fourth coil 121 on the first metal layer 14, the partial coil of the first winding 11 on the second metal layer 15, and the seventh coil 132 on the third metal layer 16 are coupled to each other, forming a first coupling region. Understandably, when the second metal layer 15 is located between the first metal layer 14 and the third metal layer 16, the fourth coil 121 on the first metal layer 14 and the partial coil of the first winding 11 on the second metal layer 15 are coupled to each other, and the partial coil of the first winding 11 on the second metal layer 15 and the seventh coil 132 on the third metal layer 16 are coupled to each other. This dual coupling improves the coupling effect, ensures the coupling coefficient of the balun 1, and thereby improves the bandwidth, linearity, and efficiency of the circuit in which the balun 1 is located.

[0167] As an example, because the second metal layer 15 is located between the first metal layer 14 and the third metal layer 16, the sixth coil 131 on the first metal layer 14, the partial coil of the first winding 11 on the second metal layer 15, and the fifth coil 122 on the third metal layer 16 are coupled to each other, forming a second coupling region. Understandably, when the second metal layer 15 is located between the first metal layer 14 and the third metal layer 16, the sixth coil 131 on the first metal layer 14 and the partial coil of the first winding 11 on the second metal layer 15 are coupled to each other, and the partial coil of the first winding 11 on the second metal layer 15 and the fifth coil 122 on the third metal layer 16 are coupled to each other. This dual coupling improves the coupling effect, ensures the coupling coefficient of the balun 1, and thereby improves the bandwidth, linearity, and efficiency of the circuit in which the balun 1 is located.

[0168] In one embodiment, if Figure 4 As shown, the first winding 11 includes a first winding winding portion 111, a winding connecting portion 112 extending from the first winding winding portion 111, and a second winding winding portion 113 extending from the winding connecting portion 112; the fourth coil 121, the first winding winding portion 111 and the seventh coil 132 are coupled to each other to form a first coupling area; the fifth coil 122, the second winding winding portion 113 and the sixth coil 131 are coupled to each other to form a second coupling area.

[0169] The first winding portion 111 and the second winding portion 113 are integrally connected to the first winding 11 and are coupled to the second winding 12 and the third winding 13. The winding connection portion 112 is used to connect the first winding portion 111 and the second winding portion 113.

[0170] When the first winding 11 is an integrated structure, the fourth coil 121 on the first metal layer 14, the first winding portion 111 on the second metal layer 15, and the seventh coil 132 on the third metal layer 16 are coupled to each other, forming a first coupling region. Specifically, the fourth coil 121 and the first winding portion 111 are coupled to each other, and the first winding portion 111 and the seventh coil 132 are coupled to each other, forming a first coupling region with multiple coupling. Correspondingly, the sixth coil 131 on the first metal layer 14, the second winding portion 113 on the second metal layer 15, and the fifth coil 122 on the third metal layer 16 are coupled to each other, forming a second coupling region with multiple coupling. Specifically, the sixth coil 131 and the second winding portion 113 are coupled to each other, and the second winding portion 113 and the fifth coil 122 are coupled to each other, forming a second coupling region with multiple coupling. In this example, both the first coupling region and the second coupling region achieve multiple coupling, ensuring the coupling coefficient of balun 1, thereby improving the bandwidth, linearity, and efficiency of the circuit in which balun 1 is located.

[0171] In one embodiment, if Figure 5 As shown, the projections of the fourth coil 121, the first winding winding portion 111 and the seventh coil 132 in the longitudinal direction at least partially overlap to form a first coupling area; the projections of the fifth coil 122, the second winding winding portion 113 and the sixth coil 131 in the longitudinal direction at least partially overlap to form a second coupling area.

[0172] As an example, the fourth coil 121 is arranged on the first metal layer 14, the first winding winding portion 111 is arranged on the second metal layer 15, and the seventh coil 132 is arranged on the third metal layer 16. When the projections of the fourth coil 121, the first winding winding portion 111 and the seventh coil 132 in the longitudinal direction at least partially overlap, the fourth coil 121 and the first winding winding portion 111 are coupled to each other, and the first winding winding portion 111 and the seventh coil 132 are coupled to each other to form a multi-coupled first coupling area, which can ensure the coupling coefficient of the balun 1, thereby improving the bandwidth, linearity and efficiency of the circuit in which the balun 1 is located. Correspondingly, the sixth coil 131 is arranged on the first metal layer 14, the second winding winding portion 113 is arranged on the second metal layer 15, and the fifth coil 122 is arranged on the third metal layer 16. When the projections of the fifth coil 122, the second winding winding portion 113 and the sixth coil 131 in the longitudinal direction at least partially overlap, the fifth coil 122 and the second winding winding portion 113 are coupled to each other, and the second winding winding portion 113 and the sixth coil 131 are coupled to each other to form a multi-coupled second coupling area, which can ensure the coupling coefficient of the balun 1, thereby improving the bandwidth, linearity and efficiency of the circuit in which the balun 1 is located.

[0173] In one embodiment, the two connection ends of the first winding 11 are respectively the input end and the ground end of the balun 1, and the two connection ends of the second winding 12 and the two connection ends of the third winding 13 are the output ends of the balun 1; or, the two connection ends of the first winding 11 are respectively the output end and the ground end of the balun 1, and the two connection ends of the second winding 12 and the two connection ends of the third winding 13 are the input ends of the balun 1.

[0174] As an example, the two connection ends of the first winding 11 are the input end and the ground end of the balun 1, respectively. For example, when the first connection end of the first winding 11 is the input end of the balun 1, the second connection end of the first winding 11 is the ground end of the balun 1. Alternatively, when the first connection end of the first winding 11 is the ground end of the balun 1, the second connection end of the first winding 11 is the input end of the balun 1. Correspondingly, the two connection ends of the second winding 12 and the two connection ends of the third winding 13 are both output ends of the balun 1. In other words, when the balun 1 is in operation, it can receive an input RF signal through one connection end of the first winding 11, process the signal through the balun 1, and then output the processed RF signal to other circuits through the four output ends formed by the second winding 12 and the third winding 13. For example, the second winding 12 can be connected to a differential amplifier circuit, and the third winding 13 can be connected to another differential amplifier circuit. It can be understood that when the first winding 11 is the input end of the balun 1 and the second winding 12 and the third winding 13 are the output ends of the balun 1, the single RF signal input by the first winding 11 can be processed by the balun 1 to output four RF signals.

[0175] As an example, the two connection terminals of the first winding 11 serve as the output terminal and the ground terminal of the balun 1, respectively. For example, when the first connection terminal of the first winding 11 serves as the output terminal of the balun 1, the second connection terminal of the first winding 11 serves as the ground terminal of the balun 1. Alternatively, when the first connection terminal of the first winding 11 serves as the ground terminal of the balun 1, the second connection terminal of the first winding 11 serves as the output terminal of the balun 1. Correspondingly, the two connection terminals of the second winding 12 and the two connection terminals of the third winding 13 serve as the input terminals of the balun 1. In other words, when the balun 1 is in operation, four RF signals can be received through the second winding 12 and the third winding 13. After processing by the balun 1, the processed RF signals can be output through one connection terminal of the first winding 11. For example, the second winding 12 can be connected to a differential amplifier circuit, and the third winding 13 can be connected to another differential amplifier circuit. In this case, the two differential amplifier circuits can output four RF signals, so that the four RF signals received by the second winding 12 and the third winding 13 are processed by the balun 1 to output a single RF signal.

[0176] The embodiment of the present invention provides a push-pull power amplifier, such as Figure 5 As shown, the push-pull power amplifier includes the above-mentioned balun 1, the first differential amplifier circuit 2 and the second differential amplifier circuit 3; the first differential amplifier circuit 2 is connected to the second winding 12; and the second differential amplifier circuit 3 is connected to the third winding 13.

[0177] As an example, a push-pull power amplifier includes the balun 1, the first differential amplifier circuit 2, and the second differential amplifier circuit 3 described in the above embodiment. The first differential amplifier circuit 2 and the second differential amplifier circuit 3 are the two differential amplifier circuits of the push-pull power amplifier. The first differential amplifier circuit 2 is connected to the second winding 12, i.e., the two ends of the first differential amplifier circuit 2 are respectively connected to the two connection ends of the two second windings 12, for transmitting two RF signals. The second differential amplifier circuit 3 is connected to the two ends of the third winding 13, i.e., the two ends of the second differential amplifier circuit 3 are respectively connected to the two connection ends of the two third windings 13.

[0178] In this embodiment, the first differential amplifier circuit 2 is connected to the second winding 12, and the second differential amplifier circuit 3 is connected to the third winding 13, and the second winding 12 and the third winding 13 are arranged on the same metal layer to ensure the balance of the circuit; the first winding 11 and the second winding 12 can cooperate to form a first coupling region, and the first winding 11 and the third winding 13 can cooperate to form a second coupling region, so that the balun 1 can form two coupling regions, which can greatly improve the coupling coefficient of the balun 1, thereby improving the bandwidth, linearity and efficiency of the push-pull power amplifier where the balun 1 is located.

[0179] In one embodiment, if Figure 6As shown, the first differential amplifier circuit 2 includes a first amplifier branch 21 and a second amplifier branch 22; the first amplifier branch 21 is connected to the first connection end of the second winding 12; the second amplifier branch 22 is connected to the second connection end of the second winding 12;

[0180] The second differential amplifier circuit 3 includes a third amplifier branch 31 and a fourth amplifier branch 32 ; the third amplifier branch 31 is connected to the first connection end of the third winding 13 ; the fourth amplifier branch 32 is connected to the second connection end of the third winding 13 .

[0181] The first amplifying branch 21 and the second amplifying branch 22 are branches in the first differential amplifying circuit 2 for implementing radio frequency signal amplification processing. As an example, the first differential amplifying circuit 2 includes the first amplifying branch 21 and the second amplifying branch 22; the first amplifying branch 21 is connected to the first connection end of the second winding 12 to implement radio frequency signal transmission between the first amplifying branch 21 and the second winding 12; the second amplifying branch 22 is connected to the second connection end of the second winding 12 to implement radio frequency signal transmission between the second amplifying branch 22 and the second winding 12.

[0182] The third amplifying branch 31 and the fourth amplifying branch 32 are branches in the second differential amplifying circuit 3 for implementing radio frequency signal amplification processing. As an example, the second differential amplifying circuit 3 includes the third amplifying branch 31 and the fourth amplifying branch 32; the third amplifying branch 31 is connected to the first connection end of the third winding 13 to implement radio frequency signal transmission between the third amplifying branch 31 and the third winding 13; the fourth amplifying branch 32 is connected to the second connection end of the third winding 13 to implement radio frequency signal transmission between the fourth amplifying branch 32 and the third winding 13.

[0183] In one embodiment, if Figure 7 As shown, the first amplifying branch 21 includes a first amplifying transistor M21, which is connected to the first connection end of the second winding 12; the second amplifying branch 22 includes a second amplifying transistor M22, which is connected to the second connection end of the second winding 12; the third amplifying branch 31 includes a third amplifying transistor M31, which is connected to the first connection end of the third winding 13; and the fourth amplifying branch 32 includes a fourth amplifying transistor M32, which is connected to the second connection end of the third winding 13.

[0184] The first amplifier transistor M21 is a transistor disposed in the first amplifier branch 21 for signal amplification. As an example, the first amplifier branch 21 includes the first amplifier transistor M21, which is connected to the first connection terminal of the second winding 12. For example, the output terminal of the first amplifier transistor M21 is connected to the first connection terminal of the second winding 12 to input the RF signal amplified by the first amplifier transistor M21 into the balun 1 for processing. For another example, the output terminal of the first amplifier transistor M21 is connected to the first connection terminal of the second winding 12 to input the RF signal output by the second winding 12 into the first amplifier transistor M21 for amplification.

[0185] The second amplifying transistor M22 is a transistor disposed in the second amplifying branch 22 for signal amplification. As an example, the second amplifying branch 22 includes the second amplifying transistor M22, which is connected to the second connection terminal of the second winding 12. For example, the output terminal of the second amplifying transistor M22 is connected to the second connection terminal of the second winding 12 so that the RF signal amplified by the second amplifying transistor M22 is input to the balun 1 for processing. For another example, the output terminal of the second amplifying transistor M22 is connected to the second connection terminal of the second winding 12 so that the RF signal output by the second winding 12 is input to the second amplifying transistor M22 for amplification.

[0186] The third amplifying transistor M31 is a transistor disposed in the third amplifying branch 31 for signal amplification. As an example, the third amplifying branch 31 includes the third amplifying transistor M31, which is connected to the first connection terminal of the third winding 13. For example, the output terminal of the third amplifying transistor M31 is connected to the first connection terminal of the third winding 13 so that the RF signal amplified by the third amplifying transistor M31 is input to the balun 1 for processing. For another example, the output terminal of the third amplifying transistor M31 is connected to the first connection terminal of the third winding 13 so that the RF signal output by the third winding 13 is input to the third amplifying transistor M31 for amplification.

[0187] The fourth amplifying transistor M32 is a transistor disposed in the fourth amplifying branch 32 for signal amplification. As an example, the fourth amplifying branch 32 includes the fourth amplifying transistor M32, which is connected to the second connection terminal of the third winding 13. For example, the output terminal of the fourth amplifying transistor M32 is connected to the second connection terminal of the third winding 13 so that the RF signal amplified by the fourth amplifying transistor M32 is input to the balun 1 for processing. For another example, the output terminal of the fourth amplifying transistor M32 is connected to the second connection terminal of the third winding 13 so that the RF signal output by the third winding 13 is input to the fourth amplifying transistor M32 for amplification.

[0188] In one embodiment, if Figure 8 As shown, the first amplifying branch 21 further includes a first matching inductor L21, one end of which is connected to the first amplifying transistor M21, and the other end is connected to the first connection end of the second winding 12; the second amplifying branch 22 further includes a second matching inductor L22, one end of which is connected to the second amplifying transistor M22, and the other end is connected to the second connection end of the second winding 12; the third amplifying branch 31 further includes a third matching inductor L31, one end of which is connected to the third amplifying transistor M31, and the other end is connected to the first connection end of the third winding 13; the fourth amplifying branch 32 further includes a fourth matching inductor L32, one end of which is connected to the fourth amplifying transistor M32, and the other end is connected to the second connection end of the third winding 13.

[0189] The first matching inductor L21 is an inductor provided in the first amplifying branch 21 for achieving impedance matching. As an example, the first amplifying branch 21 further includes the first matching inductor L21, one end of which is connected to the first amplifying transistor M21, and the other end of which is connected to the first connection end of the second winding 12. In other words, the first amplifying transistor M21 is connected to the first connection end of the second winding 12 via the first matching inductor L21 to achieve impedance matching.

[0190] The second matching inductor L22 is an inductor provided in the second amplifying branch 22 for achieving impedance matching. As an example, the second amplifying branch 22 further includes the second matching inductor L22, one end of which is connected to the second amplifying transistor M22, and the other end of which is connected to the second connection end of the second winding 12. In other words, the second amplifying transistor M22 is connected to the second connection end of the second winding 12 via the second matching inductor L22 to achieve impedance matching.

[0191] The third matching inductor L31 is an inductor provided in the third amplifying branch 31 for achieving impedance matching. As an example, the third amplifying branch 31 further includes the third matching inductor L31. One end of the third matching inductor L31 is connected to the third amplifying transistor M31, and the other end is connected to the first connection end of the third winding 13. In other words, the third amplifying transistor M31 is connected to the first connection end of the third winding 13 via the third matching inductor L31 to achieve impedance matching.

[0192] The fourth matching inductor L32 is an inductor provided in the fourth amplifying branch 32 for achieving impedance matching. As an example, the fourth amplifying branch 32 further includes the fourth matching inductor L32, one end of which is connected to the fourth amplifying transistor M32, and the other end of which is connected to the second connection end of the third winding 13. In other words, the fourth amplifying transistor M32 is connected to the second connection end of the third winding 13 via the fourth matching inductor L32 to achieve impedance matching.

[0193] In one embodiment, if Figure 9 As shown, the first differential amplifier circuit 2 also includes a first resonant circuit 23 and a second resonant circuit 24; the second differential amplifier circuit 3 includes a third resonant circuit 33 and a fourth resonant circuit 34; one end of the first resonant circuit 23 is connected to the first amplifying branch 21, and the other end is grounded; one end of the second resonant circuit 24 is connected to the second amplifying branch 22, and the other end is grounded; one end of the third resonant circuit 33 is connected to the third amplifying branch 31, and the other end is grounded; one end of the fourth resonant circuit 34 is connected to the fourth amplifying branch 32, and the other end is grounded.

[0194] The first resonant circuit 23 and the second resonant circuit 24 are two resonant circuits in the first differential amplifier circuit 2 , and the third resonant circuit 33 and the fourth resonant circuit 34 are two resonant circuits in the second differential amplifier circuit 3 .

[0195] As an example, one end of the first resonant circuit 23 is connected to the first amplifying branch 21, and the other end is grounded. The second-order harmonic impedance of the first amplifying branch 21 is adjusted so that the harmonic impedance (especially the second-order harmonic impedance) of the push-pull power amplifier within the entire operating frequency band is more converged, thereby optimizing the overall performance of the push-pull power amplifier within the entire operating frequency band. For example, when the output end of the first amplifying branch 21 is connected to the first connection end of the second winding 12, one end of the first resonant circuit 23 is connected to the connection node between the first amplifying branch 21 and the first connection end of the second winding 12, and the other end is grounded. The second-order harmonic impedance of the first amplifying branch 21 is adjusted so that the harmonic impedance (especially the second-order harmonic impedance) of the push-pull power amplifier within the entire operating frequency band is more converged, thereby optimizing the overall performance of the push-pull power amplifier within the entire operating frequency band.

[0196] As an example, one end of the second resonant circuit 24 is connected to the second amplifying branch 22, and the other end is grounded. The second-order harmonic impedance of the second amplifying branch 22 is adjusted, so that the harmonic impedance (especially the second-order harmonic impedance) of the push-pull power amplifier within the entire operating frequency band is more converged, thereby optimizing the overall performance of the push-pull power amplifier within the entire operating frequency band. For example, when the output end of the second amplifying branch 22 is connected to the second connection end of the second winding 12, one end of the second resonant circuit 24 is connected to the connection node between the second amplifying branch 22 and the second connection end of the second winding 12, and the other end is grounded. The second-order harmonic impedance of the second amplifying branch 22 is adjusted, so that the harmonic impedance (especially the second-order harmonic impedance) of the push-pull power amplifier within the entire operating frequency band is more converged, thereby optimizing the overall performance of the push-pull power amplifier within the entire operating frequency band.

[0197] As an example, one end of the third resonant circuit 33 is connected to the third amplifying branch 31, and the other end is grounded. The second-order harmonic impedance of the third amplifying branch 31 is adjusted, so that the harmonic impedance (especially the second-order harmonic impedance) of the push-pull power amplifier within the entire operating frequency band is more converged, thereby optimizing the overall performance of the push-pull power amplifier within the entire operating frequency band. For example, when the output end of the third amplifying branch 31 is connected to the first connection end of the third winding 13, one end of the third resonant circuit 33 is connected to the connection node between the third amplifying branch 31 and the first connection end of the third winding 13, and the other end is grounded. The second-order harmonic impedance of the third amplifying branch 31 is adjusted, so that the harmonic impedance (especially the second-order harmonic impedance) of the push-pull power amplifier within the entire operating frequency band is more converged, thereby optimizing the overall performance of the push-pull power amplifier within the entire operating frequency band.

[0198] As an example, one end of the fourth resonant circuit 34 is connected to the fourth amplifying branch 32, and the other end is grounded. The second-order harmonic impedance of the fourth amplifying branch 32 is adjusted to make the harmonic impedance (especially the second-order harmonic impedance) of the push-pull power amplifier more convergent across the entire operating frequency band, thereby optimizing the overall performance of the push-pull power amplifier across the entire operating frequency band. For example, when the output end of the fourth amplifying branch 32 is connected to the second connection end of the third winding 13, one end of the fourth resonant circuit 34 is connected to the connection node between the fourth amplifying branch 32 and the second connection end of the third winding 13, and the other end is grounded. The second-order harmonic impedance of the fourth amplifying branch 32 is adjusted to make the harmonic impedance (especially the second-order harmonic impedance) of the push-pull power amplifier more convergent across the entire operating frequency band, thereby optimizing the overall performance of the push-pull power amplifier across the entire operating frequency band.

[0199] In one embodiment, if Figure 10 and Figure 11As shown, one end of the first resonant circuit 23 is connected to the connection node between the first amplifying transistor M21 and the first matching inductor L21, and the other end is grounded; or, one end of the first resonant circuit 23 is connected to the first matching inductor L21 and the first connection end of the second winding 12, and the other end is grounded; one end of the second resonant circuit 24 is connected to the connection node between the second amplifying transistor M22 and the second matching inductor L22, and the other end is grounded; or, one end of the second resonant circuit 24 is connected to the second connection end of the second matching inductor L22 and the second winding 12, and the other end is grounded. One end of the third resonant circuit 33 is connected to the connection node between the third amplifying transistor M31 and the third matching inductor L31, and the other end is grounded; alternatively, one end of the third resonant circuit 33 is connected to the third matching inductor L31 and the first connection end of the third winding 13, and the other end is grounded; one end of the fourth resonant circuit 34 is connected to the connection node between the fourth amplifying transistor M32 and the fourth matching inductor L32, and the other end is grounded; alternatively, one end of the fourth resonant circuit 34 is connected to the second connection end of the fourth matching inductor L32 and the third winding 13, and the other end is grounded.

[0200] As an example, a first matching inductor L21 is provided between the first amplifying transistor M21 and the first connection end of the second winding 12, a second matching inductor L22 is provided between the first amplifying transistor M21 and the second connection end of the second winding 12, a third matching inductor L31 is provided between the third amplifying transistor M31 and the first connection end of the third winding 13, and a fourth matching inductor L32 is provided between the fourth amplifying transistor M32 and the second connection end of the third winding 13. The first resonant circuit 23, the second resonant circuit 24, the third resonant circuit 33 and the fourth resonant circuit 34 can be set at different positions to adjust the second-order harmonic impedance of the push-pull power amplifier, so that the harmonic impedance (especially the second-order harmonic impedance) of the push-pull power amplifier within the entire operating frequency band is more converged, thereby improving the working efficiency and linearity of the push-pull power amplifier circuit.

[0201] The first circuit design: Figure 11As shown, one end of the first resonant circuit 23 is connected to the connection node between the first amplifying transistor M21 and the first matching inductor L21, and the other end is grounded; one end of the second resonant circuit 24 is connected to the connection node between the second amplifying transistor M22 and the second matching inductor L22, and the other end is grounded; one end of the third resonant circuit 33 is connected to the connection node between the third amplifying transistor M31 and the third matching inductor L31, and the other end is grounded; one end of the fourth resonant circuit 34 is connected to the connection node between the fourth amplifying transistor M32 and the fourth matching inductor L32, and the other end is grounded. Under this circuit design, by adjusting the resonant frequency points of the first resonant circuit 23, the second resonant circuit 24, the third resonant circuit 33 and the fourth resonant circuit 34, the first resonant circuit 23, the second resonant circuit 24, the third resonant circuit 33 and the fourth resonant circuit 34 resonate at the second-order resonant point, the second-order harmonic impedance of the output end of the first amplifying transistor M21, the second amplifying transistor M22, the third amplifying transistor M31 and the fourth amplifying transistor M32 is close to zero, so as to adjust the second-order harmonic impedance of the push-pull power amplifier, so that the harmonic impedance (especially the second-order harmonic impedance) of the push-pull power amplifier within the entire operating frequency band is more converged, thereby improving the working efficiency and linearity of the push-pull power amplifier circuit.

[0202] The second circuit design: Figure 10 As shown, one end of the first resonant circuit 23 is connected to the first matching inductor L21 and the first connection end of the second winding 12, and the other end is grounded; one end of the second resonant circuit 24 is connected to the second matching inductor L22 and the second connection end of the second winding 12, and the other end is grounded; one end of the third resonant circuit 33 is connected to the third matching inductor L31 and the first connection end of the third winding 13, and the other end is grounded; one end of the fourth resonant circuit 34 is connected to the fourth matching inductor L32 and the second connection end of the third winding 13, and the other end is grounded. In this circuit design, by adjusting the resonant frequencies of the first resonant circuit 23, the second resonant circuit 24, the third resonant circuit 33, and the fourth resonant circuit 34, the first resonant circuit 23, the second resonant circuit 24, the third resonant circuit 33, and the fourth resonant circuit 34 resonate at the second-order resonant point, the second-order harmonic impedance at the output ends of the first amplifying transistor M21, the second amplifying transistor M22, the third amplifying transistor M31, and the fourth amplifying transistor M32 is biased toward inductive behavior. Impedance matching is then performed using the first matching inductor L21, the second matching inductor L22, the third matching inductor L31, and the fourth matching inductor L32, so that the second-order harmonic impedance at the two connection ends of the second winding 12 and the two connection ends of the third winding 13 is close to zero. This adjusts the second-order harmonic impedance of the push-pull power amplifier, thereby making the harmonic impedance (especially the second-order harmonic impedance) of the push-pull power amplifier more convergent across the entire operating frequency band, thereby improving the operating efficiency and linearity of the push-pull power amplifier circuit.

[0203] Furthermore, under the second circuit design, by adjusting the first resonant circuit 23, the second resonant circuit 24, the third resonant circuit 33, and the fourth resonant circuit 34, for example, when the resonant circuit is an LC resonant circuit, the capacitance value or the inductance value can be reduced, so that the first resonant circuit 23, the second resonant circuit 24, the third resonant circuit 33, and the fourth resonant circuit 34 are in a partial capacitive state as a whole, and then impedance conversion is performed through the first matching inductor L21, the second matching inductor L22, the third matching inductor L31, and the fourth matching inductor L32, so that the second-order harmonic impedance at the output end of the first amplifying transistor M21, the second amplifying transistor M22, the third amplifying transistor M31, and the fourth amplifying transistor M32 is close to zero, so as to adjust the second-order harmonic impedance of the push-pull power amplifier, so that the harmonic impedance (especially the second-order harmonic impedance) of the push-pull power amplifier within the entire operating frequency band is more converged, thereby improving the working efficiency and linearity of the push-pull power amplifier circuit.

[0204] In one embodiment, if Figure 12 As shown, the first resonant circuit 23 includes a first capacitor C21 and a first inductor L23, one end of the first capacitor C21 is connected to the first amplifying branch 21, and the other end is grounded through the first inductor L23; the second resonant circuit 24 includes a second capacitor C22 and a second inductor L24, one end of the second capacitor C22 is connected to the second amplifying branch 22, and the other end is grounded through the second inductor L24; the third resonant circuit 33 includes a third capacitor C31 and a third inductor L33, one end of the third capacitor C31 is connected to the third amplifying branch 31, and the other end is grounded through the third inductor L33; the fourth resonant circuit 34 includes a fourth capacitor C32 and a fourth inductor L34, one end of the fourth capacitor C32 is connected to the fourth amplifying branch 32, and the other end is grounded through the fourth inductor L34.

[0205] As an example, the first resonant circuit 23 includes a first capacitor C21 and a first inductor L23. One end of the first capacitor C21 is connected to the first amplifying branch 21, and the other end is grounded through the first inductor L23. By adjusting the capacitance value of the first capacitor C21 and the inductance value of the first inductor L23, the first resonant circuit 23 resonates at the second-order resonance point.

[0206] As an example, the second resonant circuit 24 includes a second capacitor C22 and a second inductor L24. One end of the second capacitor C22 is connected to the second amplifying branch 22, and the other end is grounded through the second inductor L24. By adjusting the capacitance value of the second capacitor C22 and the inductance value of the second inductor L24, the second resonant circuit 24 resonates at the second-order resonance point.

[0207] As an example, the third resonant circuit 33 includes a third capacitor C31 and a third inductor L33. One end of the third capacitor C31 is connected to the third amplifying branch 31, and the other end is grounded through the third inductor L33. By adjusting the capacitance value of the third capacitor C31 and the inductance value of the third inductor L33, the third resonant circuit 33 resonates at the second-order resonance point.

[0208] As an example, the fourth resonant circuit 34 includes a fourth capacitor C32 and a fourth inductor L34. One end of the fourth capacitor C32 is connected to the fourth amplifying branch 32, and the other end is grounded through the fourth inductor L34. By adjusting the capacitance value of the fourth capacitor C32 and the inductance value of the fourth inductor L34, the fourth resonant circuit 34 resonates at the second-order resonance point.

[0209] In one embodiment, if Figure 5-Figure 12 As shown, the midpoint of the second winding 12 is connected to the power supply terminal VCC, and the midpoint of the third winding 13 is connected to the power supply terminal VCC.

[0210] As an example, the midpoint of the second winding 12 is connected to the power supply terminal VCC to power the first differential amplifier circuit 2 through the second winding 12; the midpoint of the third winding 13 is connected to the power supply terminal VCC to power the second differential amplifier circuit 3 through the third winding 13.

[0211] In this example, the first differential amplifier circuit 2 includes a first amplifier branch 21 and a second amplifier branch 22. The output end of the first amplifier branch 21 is connected to the first connection end of the second winding 12, and the output end of the second amplifier branch 22 is connected to the second connection end of the second winding 12. The midpoint of the second winding 12 is connected to the power supply end VCC, and the first amplifier branch 21 and the second amplifier branch 22 can be powered through the second winding 12; moreover, the midpoint of the second winding 12 is connected to the power supply end VCC to ensure the balance of the circuit.

[0212] In this example, the second differential amplifier circuit 3 includes a third amplifier branch 31 and a fourth amplifier branch 32. The output end of the third amplifier branch 31 is connected to the first connection end of the third winding 13, and the output end of the fourth amplifier branch 32 is connected to the second connection end of the third winding 13. The midpoint of the third winding 13 is connected to the power supply end VCC, and the third amplifier branch 31 and the fourth amplifier branch 32 can be powered by the third winding 13. Moreover, the midpoint of the third winding 13 is connected to the power supply end VCC to ensure the balance of the circuit.

[0213] In one embodiment, if Figure 13As shown, the first amplifying branch 21 further includes a first blocking capacitor C23 and a first feeding circuit 221; the first blocking capacitor C23 is arranged between the first amplifying transistor M21 and the first connection terminal of the second winding 12; one end of the first feeding circuit 221 is connected to the connection node between the first amplifying transistor M21 and the first blocking capacitor C23, and the other end is connected to the power supply terminal VCC; the second amplifying branch 22 further includes a second blocking capacitor C24 and a second feeding circuit 221; the second blocking capacitor C24 is arranged between the second amplifying transistor M22 and the second connection terminal of the second winding 12; one end of the second feeding circuit 221 is connected to the connection node between the second amplifying transistor M22 and the second blocking capacitor C24, and the other end is connected to the power supply terminal VCC The third amplifying branch 31 further includes a third blocking capacitor C33 and a third feeding circuit 311; the third blocking capacitor C33 is arranged between the third amplifying transistor M31 and the first connection terminal of the third winding 13; one end of the third feeding circuit 311 is connected to the connection node between the third amplifying transistor M31 and the third blocking capacitor C33, and the other end is connected to the power supply terminal VCC; the fourth amplifying branch 32 further includes a fourth blocking capacitor C34 and a fourth feeding circuit 321; the fourth blocking capacitor C34 is arranged between the fourth amplifying transistor M32 and the second connection terminal of the third winding 13; one end of the fourth feeding circuit 321 is connected to the connection node between the fourth amplifying transistor M32 and the fourth blocking capacitor C34, and the other end is connected to the power supply terminal VCC.

[0214] As an example, the first amplifying branch 21 further includes a first DC-blocking capacitor C23 and a first feed circuit 221. The first DC-blocking capacitor C23 is disposed between the first amplifying transistor M21 and the first connection terminal of the second winding 12 to block DC current and allow AC current to pass through. Due to the DC-blocking and AC-passing properties of the first DC-blocking capacitor C23, the circuit cannot supply power to the first amplifying transistor M21 via the second winding 12. Therefore, a first feed circuit 221 is additionally provided. One end of the first feed circuit 221 is connected to the connection node between the first amplifying transistor M21 and the first DC-blocking capacitor C23, and the other end is connected to the power supply terminal VCC. Power is supplied to the first amplifying transistor M21 via the first feed circuit 221 to ensure normal operation of the circuit. In this example, the first feeding circuit 221 may include a first feeding inductor L25, which is connected to the power supply terminal VCC and the first amplifying transistor M21 through the first feeding inductor L25 to supply power to the first amplifying transistor M21. The first feeding inductor L25 works together with the first DC blocking capacitor C23 to further adjust the impedance conversion of the push-pull power amplifier, thereby achieving more flexible impedance adjustment.

[0215] As an example, the second amplifying branch 22 further includes a second DC-blocking capacitor C24 and a second feed circuit 221. The second DC-blocking capacitor C24 is disposed between the second amplifying transistor M22 and the second connection terminal of the second winding 12 to block DC current and allow AC current to pass through. Due to the DC-blocking and AC-passing properties of the second DC-blocking capacitor C24, the circuit cannot supply power to the second amplifying transistor M22 via the second winding 12. Therefore, a second feed circuit 221 is additionally provided. One end of the second feed circuit 221 is connected to the connection node between the second amplifying transistor M22 and the second DC-blocking capacitor C24, and the other end is connected to the power supply terminal VCC. Power is supplied to the second amplifying transistor M22 via the second feed circuit 221 to ensure normal operation of the circuit. In this example, the second feeding circuit 221 may include a second feeding inductor L26, which is connected to the power supply terminal VCC and the second amplifying transistor M22 through the second feeding inductor L26 to supply power to the second amplifying transistor M22. The second feeding inductor L26 works together with the second DC blocking capacitor C24 to further adjust the impedance conversion of the push-pull power amplifier, thereby achieving more flexible impedance adjustment.

[0216] As an example, the third amplifying branch 31 further includes a third DC blocking capacitor C33 and a third feeding circuit 311; the third DC blocking capacitor C33 is arranged between the third amplifying transistor M31 and the first connection terminal of the third winding 13 to achieve the purpose of blocking DC and passing AC. Due to the DC blocking and AC passing characteristics of the third DC blocking capacitor C33, the circuit cannot supply power to the third amplifying transistor M31 through the third winding 13. Therefore, a third feeding circuit 311 is required to be additionally provided. One end of the third feeding circuit 311 is connected to the connection node between the third amplifying transistor M31 and the third DC blocking capacitor C33, and the other end is connected to the power supply terminal VCC. The third amplifying transistor M31 is supplied with power through the third feeding circuit 311 to ensure normal operation of the circuit. In this example, the third feeding circuit 311 may include L35, which connects the power supply terminal VCC and the third amplifying transistor M31 via L35 to supply power to the third amplifying transistor M31. L35 and the third DC blocking capacitor C33 work together to further adjust the impedance conversion of the push-pull power amplifier, thereby achieving more flexible impedance adjustment.

[0217] As an example, the fourth amplifying branch 32 further includes a fourth DC-blocking capacitor C34 and a fourth feed circuit 321. The fourth DC-blocking capacitor C34 is disposed between the fourth amplifying transistor M32 and the second connection terminal of the third winding 13 to block DC current and allow AC current to pass through. Due to the DC-blocking and AC-passing properties of the first DC-blocking capacitor C23, the circuit cannot supply power to the fourth amplifying transistor M32 via the third winding 13. Therefore, a fourth feed circuit 321 is additionally provided. One end of the fourth feed circuit 321 is connected to the connection node between the fourth amplifying transistor M32 and the fourth DC-blocking capacitor C34, and the other end is connected to the power supply terminal VCC. Power is supplied to the third amplifying transistor M31 via the fourth feed circuit 321 to ensure normal operation of the circuit. In this example, the fourth feeding circuit 321 may include a fourth feeding inductor L36, which is connected to the power supply terminal VCC and the fourth amplifying transistor M32 through the fourth feeding inductor L36 to supply power to the fourth amplifying transistor M32. The fourth feeding inductor L36 works together with the fourth DC blocking capacitor C34 to further adjust the impedance conversion of the push-pull power amplifier, thereby achieving more flexible impedance adjustment.

[0218] An embodiment of the present invention provides a radio frequency front-end module, such as Figure 14 As shown, it includes a substrate, a first chip 4 arranged on the substrate, and the push-pull power amplifier in the above embodiment arranged on the substrate, the first chip 4 includes a first differential amplifier circuit 2 and a second differential amplifier circuit 3; the first end of the first differential amplifier circuit 2 is connected to the first pad of the first chip 4, and the first pad is connected to the first connection end of the second winding 12 through a first bonding wire S21; the second end of the first differential amplifier circuit 2 is connected to the second pad of the first chip 4, and the second pad is connected to the second connection end of the second winding 12 through a second bonding wire S22; the first end of the second differential amplifier circuit 3 is connected to the third pad of the first chip 4, and the third pad is connected to the first connection end of the third winding 13 through a third bonding wire S31; the second end of the second differential amplifier circuit 3 is connected to the fourth pad of the first chip 4, and the fourth pad is connected to the second connection end of the third winding 13 through a fourth bonding wire S32.

[0219] As an example, the RF front-end module includes a substrate and a push-pull power amplifier arranged on a first chip 4 and the above-mentioned embodiment, and a first differential amplifier circuit 2 and a second differential amplifier circuit 3 are provided on the first chip 4. The first differential amplifier circuit 2 and the second differential amplifier circuit 3 on the first chip 4 are connected to the push-pull power amplifier on the substrate.

[0220] As an example, the first terminal of the first differential amplifier circuit 2 provided on the first chip 4 is connected to the first pad of the first chip 4. The first pad is connected to the first connection end of the second winding 12 via a first bonding wire S21, thereby electrically connecting the first differential amplifier circuit 2 to the first connection end of the second winding 12. The first pad is a pad provided on the first chip 4. The first bonding wire S21 is a bonding wire connecting the first pad and the first connection end of the first winding 11. Here, the first bonding wire S21 is equivalent to the first matching inductor L21, which can achieve an impedance matching effect.

[0221] As an example, the second end of the first differential amplifier circuit 2 provided on the first chip 4 is connected to the second pad of the first chip 4, and the second pad is connected to the second connection end of the second winding 12 via a second bonding wire S22, thereby electrically connecting the first differential amplifier circuit 2 to the second connection end of the second winding 12. The second pad is a pad provided on the first chip 4, and the second bonding wire S22 is a bonding wire connecting the second pad and the second connection end of the first winding 11. Here, the second bonding wire S22 functions as a second matching inductor L22, providing an impedance matching effect.

[0222] In this example, when the first differential amplifier circuit 2 includes a first amplifier branch 21 and a second amplifier branch 22 , the first end of the first differential amplifier circuit 2 is one end of the first amplifier branch 21 , and the second end of the second differential amplifier circuit 3 is one end of the second amplifier branch 22 .

[0223] As an example, the first end of the second differential amplifier circuit 3 provided on the first chip 4 is connected to the third pad of the first chip 4, and the third pad is connected to the first connection end of the third winding 13 via a third bonding wire S31, thereby electrically connecting the second differential amplifier circuit 3 to the first connection end of the third winding 13. The third pad is a pad provided on the first chip 4, and the third bonding wire S31 is a bonding wire connecting the third pad to the first connection end of the second winding 12. Here, the third bonding wire S31 is equivalent to the third matching inductor L31, which can achieve an impedance matching effect.

[0224] As an example, the second terminal of the second differential amplifier circuit 3 provided on the first chip 4 is connected to the fourth pad of the first chip 4. The fourth pad is connected to the second connection terminal of the third winding 13 via a fourth bonding wire S32, thereby electrically connecting the second differential amplifier circuit 3 to the second connection terminal of the third winding 13. The fourth pad is provided on the first chip 1. The fourth bonding wire S32 connects the fourth pad to the second connection terminal of the third winding 13. The fourth bonding wire S32 acts as a fourth matching inductor L32 and can provide an impedance matching effect.

[0225] In this example, when the second differential amplifier circuit 3 includes a third amplifier branch 31 and a fourth amplifier branch 32 , the first end of the second differential amplifier circuit 3 is one end of the third amplifier branch 31 , and the second end of the second differential amplifier circuit 3 is one end of the fourth amplifier branch 32 .

[0226] In one embodiment, if Figure 15 As shown, the first chip 4 further includes a first capacitor C21, a second capacitor C22, a third capacitor C31 and a fourth capacitor C32; the first differential amplifier circuit 2 includes a first amplifier transistor M21 and a second amplifier transistor M22, and the second differential amplifier circuit 3 includes a third amplifier transistor M31 and a fourth amplifier transistor M32; the first end of the first capacitor C21 is connected to the first amplifier transistor M21, the second end of the first capacitor C21 is connected to the fifth pad of the first chip 4, and the fifth pad is grounded through the fifth bonding wire S23; the first end of the second capacitor C22 is connected to the The second amplifying transistor M22 is connected, the second end of the second capacitor C22 is connected to the sixth pad of the first chip 4, and the sixth pad is grounded through the sixth bonding wire S24; the first end of the third capacitor C31 is connected to the third amplifying transistor M31, the second end of the third capacitor C31 is connected to the seventh pad of the first chip 4, and the seventh pad is grounded through the seventh bonding wire S33; the first end of the fourth capacitor C32 is connected to the fourth amplifying transistor M32, the second end of the fourth capacitor C32 is connected to the eighth pad of the first chip 4, and the eighth pad is grounded through the eighth bonding wire S34.

[0227] The first capacitor C21, the second capacitor C22, the third capacitor C31, and the fourth capacitor C32 are four capacitors provided on the first chip 4. The first amplifying transistor M21 and the second amplifying transistor M22 are two amplifying transistors of the first differential amplifying circuit 2. The third amplifying transistor M31 and the fourth amplifying transistor M32 are two amplifying transistors of the second differential amplifying circuit 3.

[0228] As an example, the first end of the first capacitor C21 is connected to the first amplifying transistor M21, and the second end of the first capacitor C21 is connected to the fifth pad of the first chip 4, and the fifth pad is grounded through the fifth bonding wire S23. The fifth pad is a pad provided on the first chip 4. The fifth bonding wire S23 is a bonding wire used to connect the fifth pad and the ground, which is equivalent to an inductor. In this example, the first end of the first capacitor C21 is connected to the first amplifying transistor M21, and the second end of the first capacitor C21 is grounded through the fifth bonding wire S23, and the fifth bonding wire S23 is equivalent to an inductor, so that the first capacitor C21 and the fifth bonding wire S23 cooperate to form an LC resonant circuit connected to the first amplifying transistor M21, which can achieve a resonance effect without the need to add additional inductance, saving components and reducing the occupied area.

[0229] As an example, the first end of the second capacitor C22 is connected to the second amplifying transistor M22, and the second end of the second capacitor C22 is connected to the sixth pad of the first chip 4, and the sixth pad is grounded through the sixth bonding wire S24. The sixth pad is a pad provided on the first chip 4. The sixth bonding wire S24 is a bonding wire for connecting the sixth pad and the ground, which is equivalent to an inductor. In this example, the first end of the second capacitor C22 is connected to the first amplifying transistor M21, and the second end of the second capacitor C22 is grounded through the sixth bonding wire S24, and the sixth bonding wire S24 is equivalent to an inductor, so that the second capacitor C22 and the sixth bonding wire S24 cooperate to form an LC resonant circuit connected to the second amplifying transistor M22, which can achieve a resonance effect without the need to add additional inductance, saving components and reducing the occupied area.

[0230] As an example, the first end of the third capacitor C31 is connected to the third amplifying transistor M31, and the second end of the third capacitor C31 is connected to the seventh pad of the first chip 4, and the seventh pad is grounded through the seventh bonding wire S33. The seventh pad is a pad provided on the first chip 4. The seventh bonding wire S33 is a bonding wire for connecting the seventh pad and the ground, which is equivalent to an inductor. In this example, one end of the third capacitor C31 is connected to the third amplifying transistor M31, and the second end of the third capacitor C31 is grounded through the seventh bonding wire S33, and the seventh bonding wire S33 is equivalent to an inductor, so that the third capacitor C31 and the seventh bonding wire S33 cooperate to form an LC resonant circuit connected to the third amplifying transistor M31, which can achieve a resonance effect without the need to add additional inductance, saving components and reducing the occupied area.

[0231] As an example, the first end of the fourth capacitor C32 is connected to the fourth amplifying transistor M32, the second end of the fourth capacitor C32 is connected to the eighth pad of the first chip 4, and the eighth pad is grounded through the eighth bonding wire S34. The eighth pad is a pad provided on the first chip 4. The eighth bonding wire S34 is a bonding wire for connecting the eighth pad and the ground, which is equivalent to an inductor. In this example, one end of the fourth capacitor C32 is connected to the fourth amplifying transistor M32, and the second end of the fourth capacitor C32 is grounded through the eighth bonding wire S34, and the eighth bonding wire S34 is equivalent to an inductor, so that the fourth capacitor C32 and the eighth bonding wire S34 cooperate to form an LC resonant circuit connected to the fourth amplifying transistor M32, which can achieve a resonance effect without the need to add additional inductance, saving components and reducing the occupied area.

[0232] When the first terminal of the first differential amplifier circuit 2 (i.e., the first amplifying transistor M21) is connected to the first pad of the first chip 4, and the first pad is connected to the first connection end of the second winding 12 via a first bonding wire S21, one end of the first capacitor C21 is connected to the first amplifying transistor M21, specifically connected between the first amplifying transistor M21 and the first bonding wire S21, and the other end is grounded via a fifth bonding wire S23. This allows the LC resonant circuit formed by the first capacitor C21 and the fifth bonding wire S23 to resonate at the second-order resonance point, making the second-order harmonic impedance output by the first amplifying transistor M21 close to zero. Similarly, the second terminal of the first differential amplifier circuit 2 (i.e., the second amplifying transistor M22) is connected to the second pad of the first chip 4, and the second pad is connected to the second connection end of the second winding 12 via a second bonding wire S22. This allows the LC resonant circuit formed by the second capacitor C22 and the sixth bonding wire S24 to resonate at the second-order resonance point, making the second-order harmonic impedance output by the second amplifying transistor M22 close to zero. The first terminal of the second differential amplifier circuit 3 (i.e., the third amplifying transistor M31) is connected to the third pad of the first chip 4. The third pad is connected to the first connection terminal of the third winding 13 via a third bonding wire S31. This allows the LC resonant circuit formed by the third capacitor C31 and the seventh bonding wire to resonate at the second-order resonance point, making the second-order harmonic impedance output by the third amplifying transistor M31 close to zero. The second terminal of the second differential amplifier circuit 3 is connected to the fourth pad of the first chip 4. The fourth pad is connected to the second connection terminal of the third winding 13 via a fourth bonding wire S32. This allows the LC resonant circuit formed by the fourth capacitor C32 and the eighth bonding wire S34 to resonate at the second-order resonance point, making the second-order harmonic impedance output by the fourth amplifying transistor M32 close to zero. In summary, the second-order harmonic impedances at the output ends of the first amplifying transistor M21, the second amplifying transistor M22, the third amplifying transistor M31, and the fourth amplifying transistor M32 can be made close to zero, so as to adjust the second-order harmonic impedance of the push-pull power amplifier, thereby making the harmonic impedance (especially the second-order harmonic impedance) of the push-pull power amplifier more convergent within the entire operating frequency band, thereby improving the working efficiency and linearity of the push-pull power amplifier circuit.

[0233] In one embodiment, if Figure 16As shown, the first chip 4 further includes a first capacitor C21, a second capacitor C22, a third capacitor C31 and a fourth capacitor C32; the first differential amplifier circuit 2 includes a first amplifier transistor M21 and a second amplifier transistor M22, and the second differential amplifier circuit 3 includes a third amplifier transistor M31 and a fourth amplifier transistor M32; the first end of the first capacitor C21 is grounded, the second end of the first capacitor C21 is connected to the fifth pad of the first chip 4, and the fifth pad is connected to the first connection end of the second winding 12 through the fifth bonding wire S23; the first end of the second capacitor C22 is grounded, The second end of the second capacitor C22 is connected to the sixth pad of the first chip 4, and the sixth pad is connected to the second connection end of the second winding 12 through the sixth bonding wire S24; the first end of the third capacitor C31 is grounded, the second end of the third capacitor C31 is connected to the seventh pad of the first chip 4, and the seventh pad is connected to the first connection end of the third winding 13 through the seventh bonding wire S33; the first end of the fourth capacitor C32 is grounded, the second end of the fourth capacitor C32 is connected to the eighth pad of the first chip 4, and the eighth pad is connected to the second connection end of the third winding 13 through the eighth bonding wire S34.

[0234] The first capacitor C21, the second capacitor C22, the third capacitor C31, and the fourth capacitor C32 are four capacitors provided on the first chip 4. The first amplifying transistor M21 and the second amplifying transistor M22 are two amplifying transistors of the first differential amplifying circuit 2. The third amplifying transistor M31 and the fourth amplifying transistor M32 are two amplifying transistors of the second differential amplifying circuit 3.

[0235] As an example, the first end of the first capacitor C21 is grounded, the second end of the first capacitor C21 is connected to the fifth pad of the first chip 4, and the fifth pad is connected to the first connection end of the second winding 12 through the fifth bonding wire S23. The fifth pad is a pad provided on the first chip 4. The fifth bonding wire S23 is a bonding wire used to connect the fifth pad and the ground, which is equivalent to an inductor. In this example, the first end of the first capacitor C21 is grounded, and the second end of the first capacitor C21 is connected to the first connection end of the second winding 12 through the fifth bonding wire S23, and the fifth bonding wire S23 is equivalent to an inductor, so that the first capacitor C21 and the fifth bonding wire S23 cooperate, which is equivalent to forming an LC resonant circuit connected to the first connection end of the second winding 12, which can achieve a resonance effect without the need to add additional inductance, saving components and reducing the occupied area.

[0236] As an example, the first end of the second capacitor C22 is grounded, the second end of the second capacitor C22 is connected to the sixth pad of the first chip 4, and the sixth pad is connected to the second connection end of the second winding 12 through the sixth bonding wire S24; the sixth pad is a pad provided on the first chip 4. The sixth bonding wire S24 is a bonding wire used to connect the sixth pad and the ground, which is equivalent to an inductor. In this example, the first end of the second capacitor C22 is grounded, and the second end of the second capacitor C22 is connected to the second connection end of the second winding 12 through the sixth bonding wire S24, and the sixth bonding wire S24 is equivalent to an inductor, so that the second capacitor C22 and the sixth bonding wire S24 cooperate, which is equivalent to an LC resonant circuit connected to the second connection end of the second winding 12, which can achieve a resonance effect without the need for additional inductance, saving components and reducing the occupied area.

[0237] As an example, the first end of the third capacitor C31 is grounded, the second end of the third capacitor C31 is connected to the seventh pad of the first chip 4, and the seventh pad is connected to the first connection end of the third winding 13 through the seventh bonding wire S33; the seventh pad is a pad provided on the first chip 4. The seventh bonding wire S33 is a bonding wire used to connect the seventh pad and the ground, which is equivalent to an inductor. In this example, one end of the third capacitor C31 is grounded, and the second end of the third capacitor C31 is connected to the first connection end of the third winding 13 through the seventh bonding wire S33. The seventh bonding wire S33 is equivalent to an inductor, so that the third capacitor C31 and the seventh bonding wire S33 cooperate to form an LC resonant circuit connected to the first connection end of the third winding 13, which can achieve a resonance effect without the need to add additional inductors, saving components and reducing the occupied area.

[0238] As an example, the first end of the fourth capacitor C32 is grounded, the second end of the fourth capacitor C32 is connected to the eighth pad of the first chip 4, and the eighth pad is connected to the second connection end of the third winding 13 through the eighth bonding wire S34. The eighth pad is a pad provided on the first chip 4. The eighth bonding wire S34 is a bonding wire for connecting the eighth pad and the ground, which is equivalent to an inductor. In this example, one end of the fourth capacitor C32 is grounded, and the second end of the fourth capacitor C32 is connected to the second connection end of the third winding 13 through the eighth bonding wire S34, and the eighth bonding wire S34 is equivalent to an inductor, so that the fourth capacitor C32 and the eighth bonding wire S34 cooperate to form an LC resonant circuit connected to the second connection end of the third winding 13, which can achieve a resonance effect without the need to add additional inductance, saving components and reducing the occupied area.

[0239] When the first terminal of the first differential amplifier circuit 2 (i.e., the first amplifying transistor M21) is connected to the first pad of the first chip 4 and the first pad is connected to the first connection end of the second winding 12 via the first bonding wire S21, one terminal of the first capacitor C21 is grounded and the second terminal of the first capacitor C21 is connected between the first bonding wire S21 and the first connection end of the second winding 12. This allows the LC resonant circuit formed by the first capacitor C21 and the fifth bonding wire S23 to resonate at the second-order resonance point, making the second-order harmonic impedance input to the first connection end of the second winding 12 close to zero. Similarly, the second terminal of the first differential amplifier circuit 2 (i.e., the second amplifying transistor M22) is connected to the second pad of the first chip 4, which is connected to the second connection end of the second winding 12 via the second bonding wire S22. This allows the LC resonant circuit formed by the second capacitor C22 and the sixth bonding wire S24 to resonate at the second-order resonance point, making the second-order harmonic impedance input to the second connection end of the second winding 12 close to zero. The first terminal of the second differential amplifier circuit 3 (i.e., the third amplifying transistor M31) is connected to the third pad of the first chip 4. The third pad is connected to the first connection terminal of the third winding 13 via a third bonding wire S31. This allows the LC resonant circuit formed by the third capacitor C31 and the seventh bonding wire to resonate at the second-order resonance point, making the second-order harmonic impedance input to the first connection terminal of the second winding 12 close to zero. The second terminal of the second differential amplifier circuit 3 is connected to the fourth pad of the first chip 4. The fourth pad is connected to the second connection terminal of the third winding 13 via a fourth bonding wire S32. This allows the LC resonant circuit formed by the fourth capacitor C32 and the eighth bonding wire S34 to resonate at the second-order resonance point, making the second-order harmonic impedance input to the first connection terminal of the second winding 12 close to zero. In summary, the second-order harmonic impedance of the two connection ends of the second winding 12 and the two connection ends of the third winding 13 can be made close to zero, so as to adjust the second-order harmonic impedance of the push-pull power amplifier, so that the harmonic impedance (especially the second-order harmonic impedance) of the push-pull power amplifier in the entire operating frequency band is more converged, thereby improving the working efficiency and linearity of the push-pull power amplifier circuit.

[0240] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit the same. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. These modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the various embodiments of the present invention, and should all be included in the scope of protection of the present invention.

Claims

1. A balun, characterized in that: The invention comprises a first winding, a second winding and a third winding, wherein the first winding and the second winding are arranged on different metal layers, and the second winding and the third winding are arranged on the same metal layer; Part of the coils of the second winding and the first winding are coupled to each other to form a first coupling region; The third winding and part of the coils of the first winding are coupled to each other to form a second coupling region; The first connection end of the second winding is used to connect to the first amplifying branch in the first differential amplifying circuit, and the second connection end of the second winding is used to connect to the second amplifying branch in the first differential amplifying circuit; The first connection end of the second winding is used to connect to the third amplifying branch in the second differential amplifying circuit, and the second connection end of the second winding is used to connect to the fourth amplifying branch in the second differential amplifying circuit; One of the first connection end and the second connection end of the first winding is the ground end of the balun, and the other is the input end or the output end of the balun; According to a routing direction from the first connection end of the first winding to the second connection end of the first winding, a routing direction of the first winding in the first coupling region is opposite to a routing direction of the first winding in the second coupling region.

2. The balun according to claim 1, wherein: The projections of the partial coils of the second winding and the first winding in the longitudinal direction at least partially overlap to form a first coupling region; Projections of the third winding and partial coils of the first winding in the longitudinal direction at least partially overlap to form a second coupling region.

3. The balun according to claim 1, wherein: The first winding is provided on a first metal layer; The second winding and the third winding are arranged on a second metal layer; The first winding includes a first winding winding portion, a winding connecting portion extending from the first winding winding portion, and a second winding winding portion extending from the winding connecting portion; The second winding and the first winding winding portion are coupled to each other to form the first coupling region; The third winding and the second winding winding portion are coupled to each other to form the second coupling region.

4. The balun according to claim 3, wherein: The projections of the second winding and the winding portion of the first winding in the longitudinal direction at least partially overlap to form a first coupling region; Projections of the winding parts of the third winding and the second winding in the longitudinal direction at least partially overlap to form a second coupling region.

5. The balun according to claim 1, wherein: The first winding includes a first coil, a second coil connected to the first coil, and a third coil, the first coil is arranged on a first metal layer, and the second coil and the third coil are arranged on a third metal layer; The second winding and the third winding are arranged on a second metal layer, and the second metal layer is located between the first metal layer and the third metal layer; The second winding, a partial coil of the first coil, and the second coil are coupled to each other to form a first coupling region; The third winding, a partial coil of the first coil, and the third coil are coupled to each other to form the second coupling region.

6. The balun according to claim 5, wherein: The first coil includes a first coil winding portion, a coil connecting portion extending from the first coil winding portion, and a second coil winding portion extending from the coil connecting portion; The second winding, the first coil winding portion and the second coil are coupled to each other to form the first coupling region; The third winding, the second coil winding portion, and the third coil are coupled to each other to form a second coupling region.

7. The balun according to claim 6, wherein: Projections of the second winding, the first coil winding portion, and the second coil in the longitudinal direction at least partially overlap to form the first coupling region; Projections of the third winding, the second coil winding portion, and the third coil in the longitudinal direction at least partially overlap to form the second coupling region.

8. The balun according to claim 5, wherein: The first end of the first coil is connected to the first end of the second coil, the second end of the first coil is connected to the first end of the third coil, and the second end of the second coil and the second end of the third coil are two connection ends of the first winding.

9. The balun according to claim 1, wherein: The second winding includes a fourth coil and a fifth coil, and the third winding includes a sixth coil and a seventh coil; The fourth coil and the fifth coil are arranged on a first metal layer, the first winding is arranged on a second metal layer, the sixth coil and the seventh coil are arranged on a third metal layer, and the second metal layer is located between the first metal layer and the third metal layer; The fourth coil, part of the coils of the first winding, and the sixth coil are coupled to each other to form the first coupling region; The fifth coil, some coils of the first winding, and the seventh coil are coupled to each other to form the second coupling region.

10. The balun according to claim 9, wherein: The first winding includes a first winding winding portion, a winding connecting portion extending from the first winding winding portion, and a second winding winding portion extending from the winding connecting portion; The fourth coil, the first winding portion and the sixth coil are coupled to each other to form the first coupling region; The fifth coil, the second winding portion, and the seventh coil are coupled to each other to form the second coupling region.

11. The balun according to claim 10, wherein: The projections of the fourth coil, the first winding portion and the sixth coil in the longitudinal direction at least partially overlap to form the first coupling region; Projections of the fifth coil, the second winding portion, and the seventh coil in the longitudinal direction at least partially overlap to form the second coupling region.

12. The balun according to claim 1, wherein: The second winding includes a fourth coil and a fifth coil, and the third winding includes a sixth coil and a seventh coil; The fourth coil and the sixth coil are arranged on a first metal layer, the first winding is arranged on a second metal layer, the fifth coil and the seventh coil are arranged on a third metal layer, and the second metal layer is located between the first metal layer and the third metal layer; The fourth coil, part of the coils of the first winding, and the seventh coil are coupled to each other to form the first coupling region; The fifth coil, some coils of the first winding, and the sixth coil are coupled to each other to form the second coupling region.

13. The balun according to claim 12, wherein: The first winding includes a first winding winding portion, a winding connecting portion extending from the first winding winding portion, and a second winding winding portion extending from the winding connecting portion; The fourth coil, the first winding portion and the seventh coil are coupled to each other to form the first coupling region; The fifth coil, the second winding portion, and the sixth coil are coupled to each other to form a second coupling region.

14. The balun according to claim 13, wherein: The projections of the fourth coil, the first winding portion and the seventh coil in the longitudinal direction at least partially overlap to form the first coupling region; Projections of the fifth coil, the second winding portion, and the sixth coil in the longitudinal direction at least partially overlap to form the second coupling region.

15. The balun according to claim 1, wherein: The two connection ends of the first winding are the input end and the ground end of the balun respectively, and the two connection ends of the second winding and the two connection ends of the third winding are the output ends of the balun; Alternatively, the two connection ends of the first winding are the output end and the ground end of the balun respectively, and the two connection ends of the second winding and the two connection ends of the third winding are the input ends of the balun.

16. A push-pull power amplifier, characterized in that: comprising the balun according to any one of claims 1 to 15, a first differential amplifier circuit, and a second differential amplifier circuit; The first differential amplifier circuit is connected to the second winding; The second differential amplifier circuit is connected to the third winding.

17. The push-pull power amplifier according to claim 16, wherein: The first differential amplifier circuit includes a first amplifier branch and a second amplifier branch; the first amplifier branch is connected to the first connection end of the second winding; the second amplifier branch is connected to the second connection end of the second winding; The second differential amplifier circuit includes a third amplifier branch and a fourth amplifier branch; the third amplifier branch is connected to the first connection end of the third winding; and the fourth amplifier branch is connected to the second connection end of the third winding.

18. The push-pull power amplifier according to claim 17, wherein: The first amplifying branch includes a first amplifying transistor, and the first amplifying transistor is connected to the first connection end of the second winding; The second amplifying branch includes a second amplifying transistor, and the second amplifying transistor is connected to the second connection end of the second winding; The third amplifying branch includes a third amplifying transistor, and the third amplifying transistor is connected to the first connection end of the third winding; The fourth amplifying branch includes a fourth amplifying transistor, and the fourth amplifying transistor is connected to the second connection end of the third winding.

19. The push-pull power amplifier according to claim 18, wherein The first amplifying branch further includes a first matching inductor, one end of the first matching inductor is connected to the first amplifying transistor, and the other end is connected to the first connection end of the second winding; The second amplifying branch further includes a second matching inductor, one end of the second matching inductor is connected to the second amplifying transistor, and the other end is connected to the second connection end of the second winding; The third amplifying branch further includes a third matching inductor, one end of the third matching inductor is connected to the third amplifying transistor, and the other end is connected to the first connection end of the third winding; The fourth amplifying branch further includes a fourth matching inductor, one end of which is connected to the fourth amplifying transistor, and the other end of which is connected to the second connection end of the third winding.

20. The push-pull power amplifier according to claim 19, wherein The first differential amplifier circuit further includes a first resonant circuit and a second resonant circuit; the second differential amplifier circuit includes a third resonant circuit and a fourth resonant circuit; One end of the first resonant circuit is connected to the first amplifying branch, and the other end is grounded; One end of the second resonant circuit is connected to the second amplifying branch, and the other end is grounded; One end of the third resonant circuit is connected to the third amplifying branch, and the other end is grounded; One end of the fourth resonant circuit is connected to the fourth amplifying branch, and the other end is grounded.

21. The push-pull power amplifier according to claim 20, wherein: One end of the first resonant circuit is connected to the connection node between the first amplifying transistor and the first matching inductor, and the other end is grounded; or one end of the first resonant circuit is connected to the first connection end of the first matching inductor and the second winding, and the other end is grounded; One end of the second resonant circuit is connected to the connection node between the second amplifying transistor and the second matching inductor, and the other end is grounded; or one end of the second resonant circuit is connected to the second connection end of the second matching inductor and the second winding, and the other end is grounded; One end of the third resonant circuit is connected to the connection node between the third amplifying transistor and the third matching inductor, and the other end is grounded; or one end of the third resonant circuit is connected to the third matching inductor and the first connection end of the third winding, and the other end is grounded; One end of the fourth resonant circuit is connected to the connection node between the fourth amplifying transistor and the fourth matching inductor, and the other end is grounded; or, one end of the fourth resonant circuit is connected to the fourth matching inductor and the second connection end of the third winding, and the other end is grounded.

22. The push-pull power amplifier according to claim 20, wherein: The first resonant circuit includes a first capacitor and a first inductor, one end of the first capacitor is connected to the first amplifying branch, and the other end is grounded through the first inductor; The second resonant circuit includes a second capacitor and a second inductor, one end of the second capacitor is connected to the second amplifying branch, and the other end is grounded through the second inductor; The third resonant circuit includes a third capacitor and a third inductor, one end of the third capacitor is connected to the third amplifying branch, and the other end is grounded through the third inductor; The fourth resonant circuit includes a fourth capacitor and a fourth inductor. One end of the fourth capacitor is connected to the fourth amplifying branch, and the other end is grounded through the fourth inductor.

23. The push-pull power amplifier according to claim 21, wherein The midpoint of the second winding is connected to the power supply end, and the midpoint of the third winding is connected to the power supply end.

24. The push-pull power amplifier according to claim 18, wherein The first amplifying branch further includes a first DC blocking capacitor and a first feeding circuit; the first DC blocking capacitor is arranged between the first amplifying transistor and the first connection end of the second winding; one end of the first feeding circuit is connected to the connection node between the first amplifying transistor and the first DC blocking capacitor, and the other end is connected to the power supply end; The second amplifying branch further includes a second DC blocking capacitor and a second feeding circuit; the second DC blocking capacitor is arranged between the second amplifying transistor and the second connection end of the second winding; one end of the second feeding circuit is connected to the connection node between the second amplifying transistor and the second DC blocking capacitor, and the other end is connected to the power supply end; The third amplifying branch further includes a third DC blocking capacitor and a third feeding circuit; the third DC blocking capacitor is arranged between the third amplifying transistor and the first connection end of the third winding; one end of the third feeding circuit is connected to the connection node between the third amplifying transistor and the third DC blocking capacitor, and the other end is connected to the power supply end; The fourth amplifying branch also includes a fourth DC blocking capacitor and a fourth feeding circuit; the fourth DC blocking capacitor is arranged between the fourth amplifying transistor and the second connection end of the third winding; one end of the fourth feeding circuit is connected to the connection node between the fourth amplifying transistor and the fourth DC blocking capacitor, and the other end is connected to the power supply end.

25. A radio frequency front-end module, characterized in that: The method comprises a substrate, a first chip arranged on the substrate, and a push-pull power amplifier according to any one of claims 16 to 24 arranged on the substrate, wherein the first chip comprises a first differential amplifier circuit and a second differential amplifier circuit; The first terminal of the first differential amplifier circuit is connected to the first pad of the first chip, and the first pad is connected to the first connection end of the second winding through a first bonding wire; The second end of the first differential amplifier circuit is connected to the second pad of the first chip, and the second pad is connected to the second connection end of the second winding through a second bonding wire; The first end of the second differential amplifier circuit is connected to the third pad of the first chip, and the third pad is connected to the first connection end of the third winding through a third bonding wire; The second end of the second differential amplifier circuit is connected to the fourth pad of the first chip, and the fourth pad is connected to the second connection end of the third winding through a fourth bonding wire.

26. The RF front-end module according to claim 25, wherein the first chip further comprises a first capacitor, a second capacitor, a third capacitor, and a fourth capacitor; the first differential amplifier circuit comprises a first amplifier transistor and a second amplifier transistor, and the second differential amplifier circuit comprises a third amplifier transistor and a fourth amplifier transistor; A first end of the first capacitor is connected to the first amplifying transistor, a second end of the first capacitor is connected to a fifth pad of the first chip, and the fifth pad is grounded through a fifth bonding wire; A first end of the second capacitor is connected to the second amplifying transistor, a second end of the second capacitor is connected to a sixth pad of the first chip, and the sixth pad is grounded through a sixth bonding wire; A first end of the third capacitor is connected to the third amplifying transistor, a second end of the third capacitor is connected to a seventh pad of the first chip, and the seventh pad is grounded through a seventh bonding wire; A first end of the fourth capacitor is connected to the fourth amplifying transistor, a second end of the fourth capacitor is connected to an eighth pad of the first chip, and the eighth pad is grounded through an eighth bonding wire.

27. The RF front-end module according to claim 25, wherein the first chip further comprises a first capacitor, a second capacitor, a third capacitor, and a fourth capacitor; the first differential amplifier circuit comprises a first amplifier transistor and a second amplifier transistor, and the second differential amplifier circuit comprises a third amplifier transistor and a fourth amplifier transistor; A first end of the first capacitor is grounded, a second end of the first capacitor is connected to a fifth pad of the first chip, and the fifth pad is connected to the first connection end of the second winding through a fifth bonding wire; A first end of the second capacitor is grounded, a second end of the second capacitor is connected to a sixth pad of the first chip, and the sixth pad is connected to the second connection end of the second winding through a sixth bonding wire; A first end of the third capacitor is grounded, a second end of the third capacitor is connected to a seventh pad of the first chip, and the seventh pad is connected to the first connection end of the third winding through a seventh bonding wire; A first end of the fourth capacitor is grounded, a second end of the fourth capacitor is connected to an eighth pad of the first chip, and the eighth pad is connected to the second connection end of the third winding through an eighth bonding wire.

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