Methods of making multilayer composite films, conductive films, and semiconductor devices

Abstract

The application discloses a preparation method of a multi-layer composite film system, a conductive thin film and a semiconductor device. The preparation method of the multi-layer composite film system comprises the following steps: preparing a first layer of metal film on a substrate by a vacuum coating method; performing surface roughening treatment on the first layer of metal film; and preparing a second layer of metal film on the first layer of metal film after the surface roughening treatment by the vacuum coating method. The preparation method of the multi-layer composite film system can enhance the adhesion between the film layers by performing the surface roughening treatment on the first layer of metal film, so that the mechanical combination mode is adopted between the film layers, the adhesion between the film layers is improved, some film layers which cannot be combined under vacuum can be effectively connected in the mechanical combination mode, the equipment investment cost is reduced, the multi-layer film system of various types is prepared by a single device, the substrate rework is effectively reduced or prevented, and the production cost is greatly reduced.

Description

Technical Field

[0001] This application relates to the field of thin film technology, and in particular to a method for preparing various types of multilayer composite film systems, conductive thin films, and semiconductor devices. Background Technology

[0002] Thin film technology is widely used in industries such as solar energy, microwaves, circuits, automobiles, and electronics. However, the adhesion between various film layers has always been a common problem hindering the development of these industries. Currently, physical vapor deposition (PVD) technology is becoming increasingly widespread. In traditional technologies, many composite films cannot be produced using continuous sputtering when using a single machine and lacking target materials. The reasonable methods for producing multi-purpose composite films in traditional technologies are either substrate rework or the introduction of multiple sputtering machines. Introducing multiple sputtering machines significantly increases equipment and production costs, while substrate rework increases workload and carries the risk of substrate scrapping. Summary of the Invention

[0003] Therefore, it is necessary to provide a method for preparing multiple types of multilayer composite films. The method of this invention, by roughening the surface of the first metal film layer, enhances the adhesion between film layers, allowing for the effective connection of layers that cannot bond under vacuum through mechanical bonding. This reduces equipment investment costs, enables the preparation of multiple types of multilayer films using a single device, effectively reduces or prevents substrate rework, and significantly reduces production costs.

[0004] One embodiment of this application provides a method for preparing various types of multilayer composite film systems.

[0005] A method for preparing multiple types of multilayer composite film systems includes the following steps:

[0006] The first metal film layer was prepared on the substrate using a vacuum deposition method;

[0007] The first metal film layer is subjected to surface roughening treatment;

[0008] A second metal film layer is prepared on the first metal film layer after surface roughening treatment using a vacuum deposition method.

[0009] In some embodiments, the substrate includes a ceramic substrate, a silicon wafer, an insulating substrate, or a semiconductor substrate.

[0010] In some embodiments, the ceramic substrate includes an alumina ceramic substrate or an aluminum nitride ceramic substrate, and the semiconductor substrate includes a solar cell.

[0011] In some embodiments, when preparing the first metal film layer on the substrate using a vacuum deposition method, the following steps are specifically included: cleaning the substrate with a cleaning agent to remove surface contaminants, wherein the cleaning agent includes hydrofluoric acid, hydrochloric acid and pure water, wherein the volume ratio of hydrofluoric acid, hydrochloric acid and pure water is 2~5mL:2~5mL:100mL.

[0012] In some embodiments, the method for preparing various types of multilayer composite film systems also satisfies at least one of the following conditions:

[0013] (1) The material for preparing the first metal film layer includes an alloy composed of one or more of the following metals: Al, Cr, Ni, Mn, Pd, Bi, Nb, Ta, Pa, V, Ti, and W;

[0014] (2) The materials used to prepare the first metal film layer include metal nitrides or metal oxides of Al, Cr, Ni, Mn, Pd, Bi, Nb, Ta, Pa, V, Ti or W.

[0015] In some embodiments, the thickness of the first metal film layer is 100nm to 300nm.

[0016] In some embodiments, the surface roughening treatment of the first metal film layer specifically includes the following steps:

[0017] After breaking the vacuum, the first metal film layer is subjected to wet sandblasting treatment. The sandblasting pressure is 0.1Mpa~0.2Mpa and the sandblasting time is 5s-20s. After wet sandblasting treatment, it is dried.

[0018] The first metal film layer after drying is subjected to plasma etching treatment with an etching pressure of 0.1 Pa to 1 Pa, an etching gas of argon, and an etching time of 20 s to 50 s.

[0019] In some embodiments, the method for preparing various types of multilayer composite film systems further includes the following steps:

[0020] The second to Nth metal film layers are prepared on the first metal film layer after surface roughening treatment using a vacuum deposition method, where N is an integer ≥ 3.

[0021] In some embodiments, the method for preparing various types of multilayer composite film systems also satisfies at least one of the following conditions:

[0022] (1) The thickness of the second metal film layer is 100nm~300nm;

[0023] (2) The thickness of the Nth metal film layer is 100nm~300nm.

[0024] In some embodiments, the method for preparing various types of multilayer composite film systems also satisfies at least one of the following conditions:

[0025] (1) The material for preparing the second metal film layer and the material for preparing the Nth metal film layer each independently include an alloy composed of one or more of the following metals: Al, Cr, Ni, Mn, Pd, Bi, Nb, Ta, Pa, V, Ti, and W;

[0026] (2) The materials for preparing the second metal film layer and the materials for preparing the Nth metal film layer each independently include metal nitrides or metal oxides of Al, Cr, Ni, Mn, Pd, Bi, Nb, Ta, Pa, V, Ti or W.

[0027] In some embodiments, the vacuum deposition process used to prepare the second to Nth metal film layers on the first metal film layer after surface roughening is the same as the vacuum deposition process used to prepare the first metal film layer.

[0028] In some embodiments, the first metal film layer is a single film layer or an indeterminate film layer.

[0029] One embodiment of this application also provides a conductive thin film.

[0030] A conductive thin film is prepared using the aforementioned methods for preparing various types of multilayer composite film systems.

[0031] An embodiment of this application also provides a semiconductor device.

[0032] A semiconductor device includes the conductive thin film.

[0033] The method for preparing various types of multilayer composite films of the present invention can enhance the adhesion between film layers by roughening the surface of the first metal film layer. For example, this application increases the surface roughness of the first metal film layer by sandblasting, and after removing the surface oxide layer, it is easier to deposit other film layers again, so that the film layers are mechanically bonded, which improves the adhesion between film layers. This allows some film layers that cannot be bonded under vacuum to be effectively connected by mechanical bonding, reduces equipment investment costs, realizes the preparation of various types of multilayer film systems with a single equipment, effectively reduces or prevents substrate rework, and significantly reduces production costs. Attached Figure Description

[0034] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0035] To gain a more complete understanding of this application and its beneficial effects, the following description will be provided in conjunction with the accompanying drawings. In the following description, the same reference numerals denote the same parts.

[0036] Figure 1 This is a schematic diagram of the process flow for preparing various types of multilayer composite film systems according to an embodiment of the present invention;

[0037] Figure 2 This is a schematic diagram of step (1) of the method for preparing various types of multilayer composite membrane systems according to Embodiment 1 of the present invention;

[0038] Figure 3 This is a schematic diagram of step (2) of the method for preparing various types of multilayer composite membrane systems according to Embodiment 1 of the present invention;

[0039] Figure 4 This is a schematic diagram of step (3) of the method for preparing various types of multilayer composite membrane systems according to Embodiment 1 of the present invention;

[0040] Figure 5 This is a schematic diagram of step (4) of the method for preparing various types of multilayer composite membrane systems according to Embodiment 1 of the present invention;

[0041] Figure 6 This is a schematic diagram of step (5) of the method for preparing various types of multilayer composite membrane systems according to Embodiment 1 of the present invention.

[0042] Explanation of reference numerals in the attached figures

[0043] 100, Substrate; 200, First metal film layer; 300, Second metal film layer; 400, Nth metal film layer. Detailed Implementation

[0044] To make the above-mentioned objects, features, and advantages of the present invention more apparent and understandable, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of the present invention. However, the present invention can be practiced in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed below.

[0045] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0046] In this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise explicitly limited. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0047] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "over," and "on top" of the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0048] In the description of this invention, "several" means one or more, "multiple" means two or more, "greater than," "less than," and "exceeding" are understood to exclude the stated number, while "above," "below," and "within" are understood to include the stated number. The use of "first" and "second" in the description is merely for distinguishing technical features and should not be construed as indicating or implying relative importance, or implicitly indicating the number of indicated technical features, or implicitly indicating the order of the indicated technical features.

[0049] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0050] This application provides a method for preparing various types of multilayer composite films, addressing the problems of traditional methods for producing multi-purpose composite films, which involve either reworking the substrate 100 or introducing multiple sputtering devices. Introducing multiple sputtering devices significantly increases equipment and production costs, while reworking the substrate 100 increases workload and carries the risk of scrapping the reworked substrate 100. The method for preparing various types of multilayer composite films will be described below with reference to the accompanying drawings.

[0051] The various methods for preparing multilayer composite films provided in this application are exemplary; please refer to [link to relevant documentation]. Figure 1 As shown, Figure 1 This is a schematic diagram of the process flow for preparing various types of multilayer composite membrane systems provided in the embodiments of this application. The various multilayer composite membrane system preparation methods of this application can be used for the production of multipurpose composite membranes.

[0052] To more clearly illustrate the structure of various methods for preparing multilayer composite membrane systems, the following will introduce various methods for preparing multilayer composite membrane systems in conjunction with the accompanying drawings.

[0053] For example, please refer to Figure 1 As shown, a method for preparing multiple types of multilayer composite film systems includes the following steps:

[0054] The first metal film layer 200 is prepared on the substrate 100 by vacuum deposition.

[0055] The surface roughening treatment is performed on the first metal film layer 200;

[0056] A second metal film layer 300 is prepared on the first metal film layer 200 after surface roughening treatment using a vacuum deposition method.

[0057] In some embodiments, substrate 100 includes a ceramic substrate, a silicon wafer, an insulating substrate, or a semiconductor substrate.

[0058] In some embodiments, the ceramic substrate includes an alumina ceramic substrate or an aluminum nitride ceramic substrate, and the semiconductor substrate includes a solar cell.

[0059] In some embodiments, when the first metal film layer 200 is prepared on the substrate 100 using a vacuum deposition method, the following steps are specifically included: cleaning the substrate 100 with a cleaning agent to remove surface contaminants, the cleaning agent including hydrofluoric acid, hydrochloric acid and pure water, wherein the volume ratio of hydrofluoric acid, hydrochloric acid and pure water is 2~5mL:2~5mL:100mL.

[0060] In some embodiments, the methods for preparing various types of multilayer composite film systems also satisfy at least one of the following conditions:

[0061] (1) The materials for preparing the first metal film layer 200 include alloys composed of one or more of the following metals: Al, Cr, Ni, Mn, Pd, Bi, Nb, Ta, Pa, V, Ti, and W;

[0062] (2) The materials used to prepare the first metal film layer 200 include metal nitrides or metal oxides of Al, Cr, Ni, Mn, Pd, Bi, Nb, Ta, Pa, V, Ti or W.

[0063] In some embodiments, the thickness of the first metal film layer 200 is 100nm to 300nm.

[0064] In some embodiments, the surface roughening treatment of the first metal film layer 200 specifically includes the following steps:

[0065] After breaking the vacuum, the first metal film layer 200 is subjected to wet sandblasting treatment. The sandblasting pressure is 0.1Mpa~0.2Mpa, the sandblasting time is 5s-20s, and the wet sandblasting treatment is followed by drying treatment.

[0066] The first metal film layer 200 after drying is subjected to plasma etching treatment. The etching pressure is 0.1 Pa to 1 Pa, the etching gas is argon, and the etching time is 20 s to 50 s.

[0067] In some embodiments, the method for preparing various types of multilayer composite film systems further includes the following steps:

[0068] See Figure 2 As shown, Figure 2 This is a schematic diagram of a multi-layer composite film system for improving adhesion according to an embodiment of the present invention. The second metal film layer 300 to the Nth metal film layer 400 are prepared on the first metal film layer 200 after surface roughening treatment by vacuum deposition method, wherein N is an integer ≥3.

[0069] In some embodiments, the methods for preparing various types of multilayer composite film systems also satisfy at least one of the following conditions:

[0070] (1) The thickness of the second metal film layer 300 is 100nm~300nm;

[0071] (2) The thickness of the Nth metal film layer 400 is 100nm~300nm.

[0072] In some embodiments, during surface roughening, a vacuum is required. After the vacuum environment is broken, oxide layers will form on the first metal film layer 200, the second metal film layer 300 to the Nth metal film layer 400. These oxide layers will be removed during the surface roughening process. Therefore, the thickness of the oxide layer needs to be taken into account as compensation during deposition. That is, the thickness of the corresponding oxide layer portion is compensated in the thickness of the first metal film layer 200, the second metal film layer 300 to the Nth metal film layer 400. Therefore, the thickness of the first metal film layer 200, the thickness of the second metal film layer 300, and the thickness of the Nth metal film layer 400 are all greater than 100 nm.

[0073] In some embodiments, the methods for preparing various types of multilayer composite film systems also satisfy at least one of the following conditions:

[0074] (1) The materials for preparing the second metal film layer 300 and the materials for preparing the Nth metal film layer 400 independently include an alloy composed of one or more of the following metals: Al, Cr, Ni, Mn, Pd, Bi, Nb, Ta, Pa, V, Ti and W.

[0075] (2) The materials for preparing the second metal film layer 300 and the materials for preparing the Nth metal film layer 400 independently include metal nitrides or metal oxides of Al, Cr, Ni, Mn, Pd, Bi, Nb, Ta, Pa, V, Ti or W.

[0076] In some embodiments, the vacuum deposition process used to prepare the second metal film layer 300 to the Nth metal film layer 400 on the first metal film layer 200 after surface roughening is the same as the vacuum deposition process used to prepare the first metal film layer 200.

[0077] In some embodiments, the first metal film layer 200 is a single film layer or a variable film layer. See also Figure 2 As shown, Figure 2 This diagram illustrates the preparation of a single film layer using the various multilayer composite film system preparation methods of this invention. (See also...) Figure 3 As shown, Figure 3 This is a schematic diagram illustrating the preparation of amorphous films using the multi-layer composite film system preparation method of the present invention.

[0078] One embodiment of this application also provides a conductive thin film.

[0079] A conductive thin film is prepared using the aforementioned methods for preparing various types of multilayer composite film systems.

[0080] An embodiment of this application also provides a semiconductor device.

[0081] A semiconductor device includes the conductive thin film.

[0082] In some embodiments, the semiconductor device includes discrete semiconductor devices, optoelectronic semiconductors, logic ICs, analog ICs, memories, etc.

[0083] Another embodiment of this application also provides a solar cell.

[0084] A solar cell comprising the aforementioned conductive thin film.

[0085] Example 1

[0086] This embodiment provides a method for preparing various types of multilayer composite film systems, including the following steps:

[0087] (1) The alumina ceramic substrate 100 was cleaned with a cleaning agent to remove surface contaminants, see [reference]. Figure 2 As shown, the cleaning agent is a mixture of hydrofluoric acid, hydrochloric acid, and pure water in a volume ratio of 2 mL:2 mL:100 mL.

[0088] (2) The first metal film layer 200 is prepared on the alumina ceramic substrate 100 by vacuum deposition method, see [reference]. Figure 3 As shown, the thickness of the first metal film layer 200 is 100 nm. The material used to prepare the first metal film layer 200 includes metal Al.

[0089] (3) After the vacuum is broken, the first metal film layer 200 is subjected to wet sandblasting treatment, see [reference]. Figure 4 As shown, the sandblasting pressure is 0.1 MPa, the sandblasting time is 20 seconds, and the wet sandblasting treatment is followed by drying.

[0090] The first metal film layer 200 after drying was subjected to plasma etching at an etching pressure of 0.1 Pa, with argon as the etching gas and an etching time of 50 s.

[0091] (4) A second metal film layer 300 is prepared on the first metal film layer 200 after surface roughening treatment using a vacuum deposition method, see [link to relevant documentation]. Figure 5 As shown, the thickness of the second metal film layer 300 is 100 nm. The material used to prepare the second metal film layer 300 is the same as that used to prepare the first metal film layer 200.

[0092] (5) The third metal film layer, the fourth metal film layer...the Nth metal film layer 400 are sequentially prepared on the second metal film layer 300 after surface roughening treatment by vacuum deposition method, see [reference]. Figure 6As shown, the thicknesses of the third metal film layer, the fourth metal film layer, and the Nth metal film layer 400 are all 100 nm. The materials used to prepare the third metal film layer, the fourth metal film layer, and the Nth metal film layer 400 are the same as those used to prepare the first metal film layer 200.

[0093] Example 2

[0094] This embodiment provides a method for preparing various types of multilayer composite film systems. See [link to documentation]. Figure 2 As shown, it includes the following steps:

[0095] (1) The silicon wafer is cleaned with a cleaning agent to remove surface contaminants. The cleaning agent is hydrofluoric acid, hydrochloric acid and pure water in a volume ratio of 2mL:2mL:100mL.

[0096] (2) A first amorphous film layer is prepared on a silicon wafer using a vacuum deposition method. The thickness of the first amorphous film layer is 300 nm. The materials used to prepare the first amorphous film layer include an alloy of metals Al and Cr.

[0097] (3) After breaking the vacuum, the first amorphous film layer is subjected to wet sandblasting treatment. The sandblasting pressure is 0.2 MPa and the sandblasting time is 5 s. After wet sandblasting treatment, it is dried.

[0098] The first amorphous film layer after drying was subjected to plasma etching at an etching pressure of 1 Pa, using argon as the etching gas, for a time of 20 s.

[0099] (4) A second amorphous film layer is prepared on the first amorphous film layer after surface roughening treatment using a vacuum deposition method. The thickness of the second amorphous film layer is 300 nm. The material used to prepare the second amorphous film layer is the same as that used to prepare the first amorphous film layer.

[0100] (5) A third, fourth, ... Nth uncertain film layer is sequentially prepared on the second uncertain film layer after surface roughening treatment by vacuum deposition. The thicknesses of the third, fourth, and Nth uncertain film layers are all 300 nm. The materials used to prepare the third, fourth, and Nth uncertain film layers are the same as those used to prepare the first uncertain film layer.

[0101] Comparative Example 1

[0102] This comparative example provides a method for preparing multiple types of multilayer composite membrane systems. The preparation method of multiple types of multilayer composite membrane systems in this comparative example is basically the same as that in Example 1, except that step (3) is omitted.

[0103] Comparative Example 2

[0104] This comparative example provides a method for preparing multiple types of multilayer composite membrane systems. The preparation method of multiple types of multilayer composite membrane systems in this comparative example is basically the same as that in Example 2, except that step (3) is omitted.

[0105] The performance of various types of multilayer composite films prepared in Examples 1, 2, Comparative Example 1, and 2 was tested. The test results are shown in Table 1.

[0106] Table 1

[0107]

[0108] In summary, the method for preparing various types of multilayer composite films of the present invention can enhance the adhesion between film layers by roughening the surface of the first metal film layer 200. For example, this application increases the surface roughness of the first metal film layer 200 by sandblasting, and after removing the surface oxide layer, it is easier to deposit other film layers again, so that the film layers are mechanically bonded, which improves the adhesion between film layers. This allows some film layers that cannot be bonded under vacuum to be effectively connected by mechanical bonding, reduces equipment investment costs, realizes the preparation of various types of multilayer film systems with a single piece of equipment, effectively reduces or prevents the rework of the substrate 100, and significantly reduces production costs.

[0109] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0110] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0111] The embodiments described above are merely illustrative of several implementations of the present invention, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of the present invention. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these modifications and improvements all fall within the scope of protection of the present invention. Therefore, the scope of protection of this patent should be determined by the appended claims.

Claims

1. A method for preparing multiple types of multilayer composite film systems, characterized in that, Includes the following steps: The first metal film layer (200) is prepared on the substrate (100) by vacuum deposition. The first metal film layer (200) is subjected to surface roughening treatment, specifically: after breaking the vacuum, the first metal film layer (200) is subjected to wet sandblasting treatment, the sandblasting pressure is 0.1Mpa~0.2Mpa, the sandblasting time is 5s-20s, the wet sandblasting treatment is followed by drying treatment, and the first metal film layer (200) after drying treatment is subjected to plasma etching treatment, the etching pressure is 0.1Pa~1Pa, the etching gas is argon, and the etching time is 20s-50s; A second metal film (300) is prepared on the first metal film (200) after surface roughening treatment using a vacuum deposition method.

2. The method for preparing various types of multilayer composite film systems according to claim 1, characterized in that, The substrate (100) includes an insulating substrate or a semiconductor substrate.

3. The method for preparing various types of multilayer composite film systems according to claim 2, characterized in that, The insulating substrate includes a ceramic substrate, which includes an alumina ceramic substrate and an aluminum nitride ceramic substrate, and the semiconductor substrate includes a solar cell.

4. The method for preparing various types of multilayer composite film systems according to claim 1, characterized in that, When preparing the first metal film layer (200) on the substrate (100) using the vacuum deposition method, the specific steps include the following: cleaning the substrate (100) with a cleaning agent to remove surface contaminants, wherein the cleaning agent includes hydrofluoric acid, hydrochloric acid and pure water, wherein the volume ratio of hydrofluoric acid, hydrochloric acid and pure water is 2~5mL:2~5mL:100mL.

5. The method for preparing various types of multilayer composite film systems according to claim 1, characterized in that, The methods for preparing various types of multilayer composite film systems also satisfy at least one of the following conditions: (1) The material for preparing the first metal film layer (200) includes an alloy composed of one or more of the following metals: Al, Cr, Ni, Mn, Pd, Bi, Nb, Ta, Pa, V, Ti and W; (2) The materials used to prepare the first metal film layer (200) include metal nitrides or metal oxides of Al, Cr, Ni, Mn, Pd, Bi, Nb, Ta, Pa, V, Ti or W.

6. The method for preparing multiple types of multilayer composite film systems according to any one of claims 1 to 5, characterized in that, The thickness of the first metal film layer (200) is 100nm~300nm.

7. The method for preparing multiple types of multilayer composite film systems according to any one of claims 1 to 5, characterized in that, The method for preparing various types of multilayer composite film systems further includes the following steps: The second metal film layer (300) to the Nth metal film layer (400) are prepared on the first metal film layer (200) after surface roughening treatment by vacuum deposition method, where N is an integer ≥3.

8. The method for preparing various types of multilayer composite film systems according to claim 7, characterized in that, The thickness of the second metal film layer (300) is 100nm~300nm.

9. The method for preparing various types of multilayer composite film systems according to claim 7, characterized in that, The thickness of the Nth metal film layer (400) is 100nm~300nm.

10. The method for preparing various types of multilayer composite film systems according to claim 7, characterized in that, The methods for preparing various types of multilayer composite film systems also satisfy at least one of the following conditions: (1) The material for preparing the second metal film layer (300) and the material for preparing the Nth metal film layer (400) each independently include an alloy composed of one or more of the following metals: Al, Cr, Ni, Mn, Pd, Bi, Nb, Ta, Pa, V, Ti and W; (2) The materials for preparing the second metal film layer (300) and the materials for preparing the Nth metal film layer (400) independently include metal nitrides or metal oxides of Al, Cr, Ni, Mn, Pd, Bi, Nb, Ta, Pa, V, Ti or W.

11. The method for preparing various types of multilayer composite film systems according to claim 7, characterized in that, The vacuum deposition process used to prepare the second metal film layer (300) to the Nth metal film layer (400) on the first metal film layer (200) after surface roughening is the same as the vacuum deposition process used to prepare the first metal film layer (200).

12. The method for preparing multiple types of multilayer composite film systems according to any one of claims 1-5 and 8-11, characterized in that, The first metal film layer (200) is a single film layer or an indeterminate film layer.

13. A conductive thin film, characterized in that, It is prepared by the preparation method of the multi-layer composite film system according to any one of claims 1 to 12.

14. A semiconductor device, characterized in that, Includes the conductive thin film as described in claim 13.

Images