A spin wave tunable resonator

Abstract

The application relates to the technical field of spin electronic devices, in particular to a spin wave tunable resonator which comprises a substrate, a magnetic thin film layer, an insulating layer and a metal waveguide antenna; the magnetic thin film layer and the insulating layer are arranged on the upper surface of the substrate; the metal waveguide antenna is arranged on the upper surface of the substrate or the upper surface of the insulating layer; the magnetic thin film layer is embedded with a magnetic reflection grating; the magnetic reflection grating is located on both sides of the metal waveguide antenna and is symmetrical along the metal waveguide antenna; the magnetic thin film layer is in-plane magnetic anisotropy or perpendicular magnetic anisotropy; after the metal waveguide antenna receives an external radio frequency signal, the metal waveguide antenna generates spin waves in the magnetic thin film layer; the spin waves propagate to both sides; when the spin waves propagate to the magnetic reflection grating, the spin waves are reflected; and resonance is formed through multiple reflections. The spin wave tunable resonator has the advantages of small size, high frequency, wide frequency modulation range, good stability and the like.

Description

Technical Field

[0001] This invention relates to the field of spintronic device technology, and in particular to a spin-wave tunable resonator. Background Technology

[0002] Spin-wave tunable resonators possess advantages such as small size, high frequency, wide tuning range, and good stability, and have broad application prospects in the field of radio frequency and microwave, attracting widespread attention in recent years. Current piezoelectric resonators, however, suffer from problems such as low frequency and narrow tuning range.

[0003] Therefore, it is crucial to provide a resonator that can solve the above problems. Summary of the Invention

[0004] To address the aforementioned problems, the present invention aims to provide a spin-wave tunable resonator. A metal waveguide antenna generates a spin wave within a magnetic thin film layer. This spin wave propagates to both sides, and when it reaches a magnetic reflection grating, it is reflected. Resonance is achieved through multiple reflections. An external magnetic field can alter the frequency of the spin-wave resonator, with an adjustable frequency range from several GHz to hundreds of GHz. The spin-wave tunable resonator of this invention offers advantages such as small size, high frequency, wide tuning range, and good stability.

[0005] The objective of this invention can be achieved through the following technical solutions:

[0006] This invention provides a spin-wave tunable resonator, comprising a substrate, a magnetic thin film layer, an insulating layer, and a metal waveguide antenna;

[0007] The magnetic thin film layer and the insulating layer are disposed on the upper surface of the substrate. The metal waveguide antenna is disposed on the upper surface of the substrate or the upper surface of the insulating layer. A magnetic reflection grating is embedded in the magnetic thin film layer. The magnetic reflection grating is located on both sides of the metal waveguide antenna and is symmetrical along the metal waveguide antenna. The magnetic thin film layer is in-plane magnetic anisotropy or perpendicular magnetic anisotropy.

[0008] After receiving external radio frequency signals, the metal waveguide antenna generates spin waves in the magnetic thin film layer. The spin waves propagate to both sides. When the spin waves propagate to the magnetic reflection grating, they are reflected. After multiple reflections, resonance is formed.

[0009] Preferably, the magnetic thin film layer is disposed on the upper surface of the substrate, the insulating layer is disposed on the upper surface of the magnetic thin film layer, and the metal waveguide antenna is disposed at the center of the upper surface of the substrate.

[0010] Preferably, the insulating layer is disposed on the upper surface of the substrate, the magnetic thin film layer is disposed on the upper surface of the insulating layer, and the metal waveguide antenna is disposed at the center of the upper surface of the insulating layer.

[0011] In one embodiment of the present invention, the magnetic thin film layer includes one or more magnetic thin films; when there are two or more magnetic thin films, the materials of adjacent magnetic thin films are different.

[0012] In one embodiment of the present invention, the aspect ratio of the magnetic thin film is 2 to 1000:1; the thickness of the magnetic thin film layer is 10 nm to 10000 nm.

[0013] In one embodiment of the present invention, the metal waveguide antenna is selected from one or more of microstrip antennas or coplanar waveguide antennas;

[0014] The spin wave excited by the metal waveguide antenna is selected from one or more of the following: magnetically static surface spin wave, backward body spin wave, forward body spin wave, or exchanged spin wave.

[0015] In one embodiment of the present invention, the aperture length of the metal waveguide antenna is 1μm to 100μm, the width is 10nm to 10μm, and the thickness is 10nm to 100nm.

[0016] In one embodiment of the present invention, the number of magnetic reflection gratings on each side of the metal waveguide antenna is 1 to 1000, and the spacing between adjacent magnetic reflection gratings is 1 / 8 to 1 / 2 of the spin wave wavelength.

[0017] In one embodiment of the present invention, the thickness of the magnetic reflective grating is 10 nm to 1000 nm.

[0018] In one embodiment of the present invention, the thickness of the insulating layer is 10 nm to 1000 nm.

[0019] In one embodiment of the present invention, the substrate is selected from one or more of silicon, silicon carbide, gadolinium gallium garnet, yttrium aluminate, yttrium aluminum garnet, quartz, lithium niobate, or lanthanum aluminate.

[0020] The magnetic thin film layer is made of Y3Fe5O. 12 Tm3Fe5O 12 Tb3Ga3O 12 One or more of the following: Co, CoFe, CoNi, CoFeB, CoFeSiB, CoBa, CoPd, FeTb, FeGaSiB, FeGa, FeNi, FeGaB, FeGe, or FeGd;

[0021] The material of the magnetic reflective grating is selected from one or more of Co, Ni, FeNi, CoFe, CoNi, CoFeB, CoFeSiB, CoBa, CoPd, FeTb, FeGaSiB, FeGa, FeGe, FeGaB or FeGd;

[0022] The insulating layer is made of one or more of the following materials: SiO2, MgO, Al2O3, AlN, HfO2, ZnO, or ZrO2.

[0023] The material of the metal waveguide antenna is selected from one or more of Pt, Ir, Ta, W, Ru, Au, Al or Cu.

[0024] In one embodiment of the present invention, the magnetic thin film and the magnetic reflective grating are made of different materials.

[0025] Compared with the prior art, the present invention has the following beneficial effects:

[0026] The frequency of the spin-wave tunable resonator of the present invention varies with the external magnetic field, and the frequency range can reach several GHz to hundreds of GHz. In addition, the spin-wave tunable resonator of the present invention has the advantages of small size, high frequency, wide frequency tuning range and good stability. Attached Figure Description

[0027] Figure 1 This is a schematic diagram of the structure of a spin-wave tunable resonator according to Example 2;

[0028] Figure 2 This is a spectrum diagram of a spin-wave tunable resonator according to Example 2;

[0029] Figure 3 This is a graph showing the relationship between the resonant frequency and magnetic field variation of a spin-wave tunable resonator in Example 2.

[0030] Figure 4 This is a schematic diagram of the structure of a spin-wave tunable resonator according to Example 3;

[0031] The following are the labels in the diagram: 1. Substrate; 2. Magnetic thin film layer; 3. Magnetic reflective grating; 4. Insulating layer; 5. Metal waveguide antenna. Detailed Implementation

[0032] The present invention will now be described in detail with reference to the accompanying drawings and specific embodiments.

[0033] In embodiments of the present invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature being directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature being directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0034] In the description of this embodiment, the terms "upper," "lower," "left," and "right," etc., refer to the orientation or positional relationship shown in the accompanying drawings. They are used only for ease of description and simplification of operation, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the present invention. In addition, the terms "first" and "second" are used only for distinction in description and have no special meaning.

[0035] Example 1

[0036] This embodiment provides a spin-wave tunable resonator, including a substrate 1, a magnetic thin film layer 2, an insulating layer 4, and a metal waveguide antenna 5; the magnetic thin film layer 2 and the insulating layer 4 are disposed on the upper surface of the substrate 1, and the metal waveguide antenna 5 is disposed on the upper surface of the substrate 1 or the upper surface of the insulating layer 4; a magnetic reflection grating 3 is embedded in the magnetic thin film layer 2, and the magnetic reflection grating 3 is located on both sides of the metal waveguide antenna 5 and is symmetrical along the metal waveguide antenna 5; the magnetic thin film layer 2 is in-plane magnetic anisotropic or perpendicular magnetic anisotropic;

[0037] Preferably, the magnetic thin film layer 2 is disposed on the upper surface of the substrate 1, the insulating layer 4 is disposed on the upper surface of the magnetic thin film layer 2, and the metal waveguide antenna 5 is disposed at the center of the upper surface of the substrate 1. Figure 1 .

[0038] Preferably, the insulating layer 4 is disposed on the upper surface of the substrate 1, the magnetic thin film layer 2 is disposed on the upper surface of the insulating layer 4, and the metal waveguide antenna 5 is disposed at the center of the upper surface of the insulating layer 4. Figure 4 .

[0039] Furthermore, the magnetic thin film layer 2 includes one or more magnetic thin films; when there are two or more magnetic thin films, the materials of adjacent magnetic thin films are different, the aspect ratio of the magnetic thin films is 2 to 1000:1, and the thickness of the magnetic thin film layer 2 is 10 nm to 10000 nm.

[0040] Furthermore, the metal waveguide antenna 5 is selected from one or more of microstrip antennas or coplanar waveguide antennas; the spin wave excited by the metal waveguide antenna 5 is selected from one or more of magnetostatic surface spin waves, backward body spin waves, forward body spin waves or exchanged spin waves; the aperture length of the metal waveguide antenna 5 is 1μm to 100μm, the width is 10nm to 10μm, and the thickness is 10nm to 100nm.

[0041] Furthermore, the number of magnetic reflection gratings 3 on each side of the metal waveguide antenna 5 is 1 to 1000, the spacing between adjacent magnetic reflection gratings 3 is 1 / 8 to 1 / 2 of the spin wave wavelength, and the thickness of the magnetic reflection grating 3 is 10 nm to 1000 nm.

[0042] Furthermore, the thickness of insulating layer 4 is 10nm to 1000nm.

[0043] Furthermore, the substrate 1 is made of one or more of silicon, silicon carbide, gadolinium gallium garnet, yttrium aluminate, yttrium aluminum garnet, quartz, lithium niobate, or lanthanum aluminate; the magnetic thin film layer 2 is made of Y3Fe5O4. 12 Tm3Fe5O 12 Tb3Ga3O 12 The materials of the magnetic reflector grating 3 are selected from one or more of Co, CoFe, CoNi, CoFeB, CoFeSiB, CoBa, CoPd, FeTb, FeGaSiB, FeGa, FeNi, FeGaB, FeGe, or FeGd; the materials of the insulating layer 4 are selected from one or more of SiO2, MgO, Al2O3, AlN, HfO2, ZnO, or ZrO2; and the materials of the metal waveguide antenna 5 are selected from one or more of Pt, Ir, Ta, W, Ru, Au, Al, or Cu. The materials of the magnetic thin film and the magnetic reflector grating 3 are different.

[0044] Example 2

[0045] This embodiment provides a spin-wave tunable resonator, such as... Figure 1 As shown, the device includes a substrate 1, on which a magnetic thin film layer 2 is covered. The magnetic thin film layer 2 has a length of 500 μm, a width of 100 μm, and a thickness of 200 nm. The magnetic thin film layer 2 is in-plane magnetically anisotropic. Magnetic reflective gratings 3 are embedded on both sides of the magnetic thin film layer 2. The magnetic reflective gratings 3 have a thickness of 100 nm and a width of 200 nm. An insulating layer 4 with a thickness of 100 nm is covered on the magnetic thin film layer 2 and the magnetic reflective gratings 3. A metal waveguide antenna 5 for exciting and receiving spin waves is disposed at the center of the upper surface of the insulating layer 4. The metal waveguide antenna 5 consists of Au electrodes with a thickness of 100 nm and a width of 200 nm. The substrate 1 is a gadolinium gallium garnet substrate; the magnetic thin film layer is Y3Fe5O. 12 The magnetic thin film layer includes a Co magnetic reflective grating 3 and an insulating layer 4, which is a SiO2 insulating layer.

[0046] The spin wave has a wavelength of 800 nm, and the spacing between the magnetic reflection gratings 3 on each side is one-quarter of the spin wave wavelength. The external magnetic field is perpendicular to the spin wave propagation direction, classifying it as a magnetostatic surface spin wave. The frequency of the spin wave varies with the external magnetic field; when the external magnetic field is 300 mT, the spin wave frequency is 10 GHz. After an external radio frequency signal is input to the metal waveguide antenna 5, a magnetostatic surface spin wave is generated within the magnetic thin film layer 2. The spin wave propagates to both sides. Due to the different wave velocities of the spin waves in the two magnetic materials, reflection occurs when the spin wave reaches the magnetic reflection gratings 3. The reflected spin wave returns to the area below the metal waveguide antenna 5, generating an induced magnetic field in space, which in turn induces a current in the metal waveguide antenna 5. After reflection by multiple magnetic reflection gratings 3, resonance is achieved. The spectrum diagram of the spin wave tunable resonator is shown below. Figure 2 As shown. The frequency of the spin-wave tunable resonator varies with the magnetic field as follows: Figure 3 As shown.

[0047] Example 3

[0048] This embodiment provides a spin-wave tunable resonator, such as... Figure 4 As shown, except for the following differences, everything else is the same as in Example 2:

[0049] A metal waveguide antenna 5 is disposed at the center of the upper surface of the substrate 1, and an insulating layer 4 with a thickness of 200 nm is covered on the metal waveguide antenna 5. A magnetic reflection grating 3 is placed on the insulating layer 4, and a magnetic thin film layer 2 is covered on the insulating layer 4 and the magnetic reflection grating 3. The parameters and positions of the remaining structures are the same as in Example 1.

[0050] The above description of the embodiments is provided to enable those skilled in the art to understand and use the invention. It will be apparent to those skilled in the art that various modifications can be made to these embodiments, and the general principles described herein can be applied to other embodiments without inventive effort. Therefore, the present invention is not limited to the above embodiments, and any improvements and modifications made by those skilled in the art based on the interpretation of the present invention, without departing from the scope of the invention, should be within the protection scope of the present invention.

Claims

1. A spin-wave tunable resonator, characterized in that, It includes a substrate (1), a magnetic thin film layer (2), an insulating layer (4), and a metal waveguide antenna (5); The magnetic thin film layer (2) and the insulating layer (4) are disposed on the upper surface of the substrate (1), and the metal waveguide antenna (5) is disposed on the upper surface of the substrate (1) or the upper surface of the insulating layer (4). A magnetic reflection grating (3) is embedded in the magnetic thin film layer (2). The magnetic reflection grating (3) is located on both sides of the metal waveguide antenna (5) and is symmetrical along the metal waveguide antenna (5). The magnetic thin film layer (2) is in-plane magnetic anisotropy or perpendicular magnetic anisotropy. After receiving external radio frequency signals, the metal waveguide antenna (5) generates spin waves in the magnetic thin film layer (2). The spin waves propagate to both sides. When the spin waves propagate to the magnetic reflection grating (3), they are reflected. After multiple reflections, resonance is formed.

2. The spin-wave tunable resonator according to claim 1, characterized in that, The magnetic thin film layer (2) is disposed on the upper surface of the substrate (1), the insulating layer (4) is disposed on the upper surface of the magnetic thin film layer (2), and the metal waveguide antenna (5) is disposed at the center of the upper surface of the substrate (1).

3. A spin-wave tunable resonator according to claim 1, characterized in that, The insulating layer (4) is disposed on the upper surface of the substrate (1), the magnetic thin film layer (2) is disposed on the upper surface of the insulating layer (4), and the metal waveguide antenna (5) is disposed at the center of the upper surface of the insulating layer (4).

4. A spin-wave tunable resonator according to claim 1, characterized in that, The magnetic thin film layer (2) includes one or more magnetic thin films; when there are two or more magnetic thin films, the materials of adjacent magnetic thin films are different; The aspect ratio of the magnetic thin film is 2 to 1000:1; The thickness of the magnetic thin film layer (2) is 10 nm to 10000 nm.

5. A spin-wave tunable resonator according to claim 1, characterized in that, The metal waveguide antenna (5) is selected from one or more of microstrip antennas or coplanar waveguide antennas; The spin wave excited by the metal waveguide antenna (5) is selected from one or more of the following: magnetic static surface spin wave, backward body spin wave, forward body spin wave or exchanged spin wave. The aperture length of the metal waveguide antenna (5) is 1μm to 100μm, the width is 10nm to 10μm, and the thickness is 10nm to 100nm.

6. A spin-wave tunable resonator according to claim 1, characterized in that, The number of magnetic reflection gratings (3) on each side of the metal waveguide antenna (5) is 1 to 1000, and the spacing between adjacent magnetic reflection gratings (3) is 1 / 8 to 1 / 2 of the spin wave wavelength.

7. A spin-wave tunable resonator according to claim 6, characterized in that, The thickness of the magnetic reflective grating (3) is 10 nm to 1000 nm.

8. A spin-wave tunable resonator according to claim 1, characterized in that, The thickness of the insulating layer (4) is 10nm to 1000nm.

9. A spin-wave tunable resonator according to claim 1, characterized in that, The material of the substrate (1) is selected from one or more of silicon, silicon carbide, gadolinium gallium garnet, yttrium aluminate, yttrium aluminum garnet, quartz, lithium niobate or lanthanum aluminate; The magnetic thin film layer (2) is made of Y3Fe5O4. 12 Tm3Fe5O 12 Tb3Ga3O 12 One or more of the following: Co, CoFe, CoNi, CoFeB, CoFeSiB, CoBa, CoPd, FeTb, FeGaSiB, FeGa, FeNi, FeGaB, FeGe, or FeGd; The material of the magnetic reflective grating (3) is selected from one or more of Co, Ni, FeNi, CoFe, CoNi, CoFeB, CoFeSiB, CoBa, CoPd, FeTb, FeGaSiB, FeGa, FeGe, FeGaB or FeGd; The insulating layer (4) is made of one or more of the following materials: SiO2, MgO, Al2O3, AlN, HfO2, ZnO or ZrO2. The material of the metal waveguide antenna (5) is selected from one or more of Pt, Ir, Ta, W, Ru, Au, Al or Cu.

10. A spin-wave tunable resonator according to claim 9, characterized in that, The magnetic thin film layer (2) and the magnetic reflective grating (3) are made of different materials.

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