OLED Display Structure and Preparation Method

Abstract

The present application example discloses an OLED display structure and a preparation method. Among them, the preparation method includes providing a substrate; forming a metal layer on the display side of the substrate; patterning the metal layer to form an anode and a cathode auxiliary layer insulated from the anode; forming a light-emitting layer on the side of the anode facing away from the substrate; forming a cathode connection layer on the display side of the substrate, and the cathode connection layer is respectively connected to the light-emitting layer and the cathode auxiliary layer. The present application example forms the anode and the cathode auxiliary layer by patterning the metal layer on the display side of the substrate, and does not need to first set a partition structure on the substrate, which can simplify the formation of the anode and the cathode auxiliary layer; by providing the light-emitting layer and connecting the light-emitting layer and the cathode auxiliary layer through the cathode connection layer, the continuity of the cathode layer of the display structure can be improved, which helps to reduce the resistance of the cathode layer of the display structure and improve the display performance of the display structure.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to an OLED display structure and a preparation method thereof. Background Art

[0002] OLED (Organic Light Emitting Display) is the current mainstream display technology. OLED display structures include active OLED display structures (AMOLED) and passive OLED display structures (PMOLED). In some cases, AMOLED's organic light-emitting materials are deposited using FMM (Fine Metal Mask) red, green and blue organic light-emitting materials. After the cathode layer is processed and formed, the cathode layer is prone to fracture, resulting in a decrease in the connection performance of the cathode layer, which in turn affects the display effect of the display structure. Summary of the invention

[0003] The present application provides a method for preparing an OLED display structure, aiming to improve the performance of a cathode layer of the OLED display structure and enhance the display effect of the display structure.

[0004] In order to achieve the above technical effects, a technical solution adopted in the present application is: to provide a method for preparing an OLED display structure, comprising the following steps:

[0005] Providing a substrate, and forming a metal layer on the display side of the substrate;

[0006] patterning the metal layer to form an anode and a cathode auxiliary layer insulated from the anode;

[0007] forming a light-emitting layer on a side of the anode facing away from the substrate; and

[0008] A cathode connecting layer is formed on the display side of the substrate, and the cathode connecting layer is respectively connected to the light emitting layer and the cathode auxiliary layer.

[0009] The present application also proposes an OLED display structure, comprising:

[0010] a substrate having a display side;

[0011] an anode disposed on the substrate;

[0012] The cathode auxiliary layer is spaced apart from the anode and arranged on the substrate, and the cathode auxiliary layer and the anode are formed by patterning the metal layer on the display side of the substrate;

[0013] A plurality of light-emitting layers are respectively arranged on a side of the anode facing away from the substrate; and

[0014] The cathode connecting layer is arranged on the display side of the substrate and is respectively connected to the cathode auxiliary layer and the plurality of light emitting layers.

[0015] In the above solution, by patterning the metal layer on the display side of the substrate to form the anode and the cathode auxiliary layer, it is not necessary to first set up a partition structure on the substrate, which can simplify the formation of the anode and the cathode auxiliary layer; by setting up the light-emitting layer and connecting the light-emitting layer and the cathode auxiliary layer through the cathode connection layer, the continuity of the cathode layer of the display structure can be improved, which helps to reduce the resistance of the cathode layer of the display structure and improve the display performance of the display structure. Description of the Drawings

[0016] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present application. For those skilled in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0017] Figure 1 is a schematic structural diagram of an example of the display structure of the present application;

[0018] Figure 2 is a flowchart of an example of the manufacturing method of the display structure of the present application;

[0019] Figure 3 is a schematic diagram of the processing steps of an example of the first light-emitting layer of the present application;

[0020] Figure 4 is a flowchart of the processing steps of an example of the first light-emitting layer of the present application;

[0021] Figure 5 is a schematic diagram of the processing steps of an example of the second light-emitting layer of the present application;

[0022] Figure 6 is a flowchart of the processing steps of an example of the second light-emitting layer of the present application;

[0023] Figure 7 is a schematic diagram of the processing steps of an example of the third light-emitting layer and the cathode connection layer of the present application;

[0024] Figure 8 is a flowchart of the processing steps of an example of the third light-emitting layer of the present application;

[0025] Figure 9 is a schematic structural diagram of another example of the display structure of the present application;

[0026] Figure 10 is a schematic diagram of the processing steps of another example of the first light-emitting layer of the present application;

[0027] Figure 11 is a flowchart of the processing steps of another example of the first light-emitting layer of the present application;

[0028] Figure 12 Schematic diagram of the processing steps for another example of the second light-emitting layer of the present application;

[0029] Figure 13 Flow chart of the processing steps for another example of the second light-emitting layer of the present application;

[0030] Figure 14 Schematic diagram of the processing steps for another example of the third light-emitting layer of the present application;

[0031] Figure 15 Flow chart of the processing steps for another example of the third light-emitting layer of the present application;

[0032] Figure 16 Schematic diagram of the processing steps for another example of the cathode connection layer of the present application;

[0033] Figure 17 Flow chart of the processing steps for another example of the cathode connection layer of the present application.

[0034] Wherein: 10, substrate; 11, driving circuit layer; 20, metal layer; 21, anode; 211, first anode; 212, second anode; 213, third anode; 22, cathode auxiliary layer; 30, light-emitting layer; 31, first light-emitting material layer, 311, first light-emitting layer; 32, second light-emitting material layer; 321, second light-emitting layer; 33, third light-emitting material layer; 331, third light-emitting layer; 40, cathode connection layer; 41, first cathode layer; 42, second cathode layer; 43, third cathode layer; 50, first protective layer; 51, first resist layer; 60, second protective layer, 61, second resist layer; 62, third protective layer; 63, third resist layer; 70, fourth protective layer; 71, fourth resist layer; 80, fifth protective layer; 81, fifth resist layer; 82, sixth protective layer; 83, sixth resist layer; 90, first encapsulation layer; 91, first via; 92, second via, 93, third via; 94, fourth via; 95, second encapsulation layer. Detailed implementation manners

[0035] Next, the technical solutions in the embodiments of the present application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative efforts belong to the scope of protection of the present application.

[0036] In the description of the present application, it should be understood that the orientation or positional relationship indicated by the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation to the present application. In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more features. In the description of the present application, the meaning of "a plurality" is two or more, unless otherwise specifically defined.

[0037] In the present application, the term "exemplary" is used to mean "serving as an example, illustration, or explanation". Any embodiment described as "exemplary" in the present application is not necessarily to be construed as more preferred or more advantageous than other embodiments. The following description is provided to enable any person skilled in the art to make and use the present application. In the following description, details are set forth for the purpose of explanation. It should be understood that those of ordinary skill in the art can recognize that the present application can be implemented without these specific details. In other instances, well-known structures and processes are not described in detail to avoid unnecessary details from obscuring the description of the present application. Therefore, the present application is not intended to be limited to the embodiments shown, but is to be accorded the widest scope consistent with the principles and features disclosed in the present application.

[0038] In the examples of the present application, "a plurality" means at least two (including two).

[0039] The OLED display structure (hereinafter referred to as the display structure) generally includes an active OLED display structure and a passive OLED display structure. The display structure generally has a substrate and a light-emitting material layer disposed on the substrate. The light-emitting material layer generally includes a plurality of sub-pixels, and each sub-pixel has a corresponding organic light-emitting material. In order to improve the resolution and reduce the cost of the OLED display structure, currently, FMM is generally used to manufacture the organic light-emitting material layer. A partition structure is added between the light-emitting layers. The partition structure includes an upper portion made of an inorganic insulating material and a lower portion made of an inorganic conductive material (generally a conductive metal). The cathode layer electrode of each light-emitting layer is connected through the lower portion made of the inorganic conductive material in the partition structure, thereby realizing the conduction of the cathode layer electrodes of the light-emitting layers. However, dry etching and wet etching methods are used to etch the inorganic insulating material layer and the inorganic conductive material layer, with many manufacturing processes and poor process control.

[0040] The display structure has a substrate, which can be a glass substrate or a flexible substrate. The material of the flexible substrate is polyimide (PI). The substrate has a driving side, and a driving circuit layer can be arranged on the driving side of the substrate. In the example of the present application, the driving circuit layer can be a TFT circuit layer, and the TFT circuit layer is used to drive the light-emitting layer of the OLED. Specifically, the TFT circuit layer includes a plurality of driving circuit units arranged in an array, and each driving circuit unit can include a thin-film transistor (TFT) device and a capacitor. Each driving circuit unit corresponds to an anode electrode and a light-emitting layer. The TFT device is of the low-temperature polysilicon (LTPS) type or the metal-oxide semiconductor (MOS) type, such as the metal-oxide semiconductor type of indium gallium zinc oxide (IGZO).

[0041] In the active OLED, the light-emitting material layer includes an anode electrode, a light-emitting layer, and a cathode layer electrode arranged in a stacked manner in sequence. The anode electrode can be disposed on the surface of the TFT circuit layer away from the substrate. There are multiple anode electrodes, which are spaced apart and arranged on one surface of the TFT circuit layer. For example, the multiple anode electrodes are arranged in an array, and each anode electrode corresponds to and is electrically connected to a driving circuit unit in the TFT circuit layer. The materials of the anode electrode include, but are not limited to, chromium, titanium, gold, silver, copper, aluminum, ITO, their combinations, or other suitable conductive materials.

[0042] The light-emitting layer is used to emit red, blue, or green light when powered on. The light-emitting layer can include one or more of a hole injection layer (HIL), a hole transfer layer (HTL), an emitting layer (EML), and an electron transfer layer (ETL).

[0043] The cathode layer electrode is disposed on the side of the light-emitting layer away from the anode electrode. The materials of the cathode layer electrode include, but are not limited to, chromium, titanium, gold, silver, copper, aluminum, ITO, their combinations, or other suitable conductive materials. The material of the cathode layer electrode can be the same as or different from the material of the anode electrode, which is specifically set according to the actual situation.

[0044] On the side of the cathode layer electrode facing away from the substrate, a filling layer and a cover plate are usually further arranged, and the cover plate can be a glass cover plate or other materials.

[0045] The embodiment of the present application provides a display structure. The following will be described in detail respectively.

[0046] Please refer to Figure 1 andFigure 2 , an example of a preparation method for an OLED display structure is proposed in this application. The preparation method includes the following steps:

[0047] S100: Provide a substrate 10 and form a metal layer 20 on the display side of the substrate 10.

[0048] The substrate 10 can serve as the bottom structure of the display structure. The substrate 10 has two relatively arranged surfaces, and one of the surfaces serves as the display side surface of the substrate 10. In the example of this application, the above-mentioned driving circuit layer 11 can be provided on the display side of the substrate 10.

[0049] The metal layer 20 can be a layer covering the display side surface of the substrate 10. The metal layer 20 in this example can adopt a transparent conductive layer such as indium tin oxide or indium zinc oxide, or can also be a multi-layer structure including a stacked transparent conductive layer, a silver conductive layer, and a transparent conductive layer.

[0050] S200: Pattern the metal layer 20 to form an anode 21 and a cathode auxiliary layer 22 insulated from the anode 21.

[0051] In the example of this application, the anode 21 and the cathode auxiliary layer 22 can be formed by etching. The anode 21 and the cathode auxiliary layer 22 being insulated from each other means that there is a gap between the anode 21 and the cathode auxiliary layer 22 and they are not electrically connected to each other. In the example of this application, multiple anodes 21 and multiple cathode auxiliary layers 22 can be formed. In the example of this application, the relative positions and shapes of the anode 21 and the cathode auxiliary layer 22 can be determined as needed. For example, in this example, the cathode auxiliary layer 22 can be in a ring shape surrounding the periphery of the anode 21. In this example, the cathode auxiliary layer 22 can also be independently arranged separately from the anode 21 and form an array distribution. Optionally, in the example of this application, a cathode auxiliary layer 22 can be provided between any two adjacent anodes 21.

[0052] S300: Form a light-emitting layer 30 on the side of the anode 21 facing away from the substrate 10.

[0053] In this example, the light-emitting layer 30 corresponds to the position of the anode 21. The light-emitting layer 30 can be an organic light-emitting material. The organic light-emitting material in the example of this application can be at least one of RGB three-color organic light-emitting materials. Taking AMOLED as an example, it has a TFT array, and pixels can emit light independently. AMOLED can independently control the light emission of each pixel point, so that the pixel points emit light continuously and independently to form the required image.

[0054] S400: Form a cathode connection layer 40 on the display side of the substrate 10. The cathode connection layer 40 is respectively connected to the light-emitting layer 30 and the cathode auxiliary layer 22.

[0055] The cathode connection layer 40 can cover the display side of the substrate 10 and cover the light-emitting layer 30 and the cathode auxiliary layer 22. In this example, the cathode connection layer 40 can be a reflective electrode and a transparent electrode disposed on the reflective electrode. The reflective electrode can be formed of Ag, magnesium (Mg), Al, Pt, Pd, Au, Ni, Nd, iridium (Ir), Cr, or a mixture thereof. The transparent electrode can be formed of at least one material of ITO, IZO, ZnO, or In2O3. In this example, the cathode connection layer 40 is connected to the cathode auxiliary layer 22 so that the cathode layer electrodes of the two light-emitting layers 30 are electrically connected through the cathode auxiliary layer 22. For example, the cathode layer electrodes in the same row or the same column are all electrically connected through the cathode auxiliary layer 22, or all the cathode layer electrodes are electrically connected through the cathode auxiliary layer 22. In the example of this application, the cathode connection layer 40 can cover the side of the cathode auxiliary layer 22 facing away from the substrate 10, and the cathode connection layer 40 can also be connected to the cathode auxiliary layer 22 through structures such as conductive posts.

[0056] In the example of this application, by forming the anode 21 and the cathode auxiliary layer 22 with the metal layer 20 and connecting the cathode auxiliary layer 22 to the cathode connection layer 40, it is possible to help reduce the cathode layer resistance of the display structure, and thus reduce the power consumption of the display structure. In the example of this application, by forming the metal layer 20 on the display side of the substrate 10 and sharing the manufacturing process of the anode 21 for the anode 21 and the cathode auxiliary layer 22, it is possible to not increase the power consumption without increasing the material cost. Since the cathode auxiliary layer 22 is used to connect the cathode connection layer 40 in this example, it helps to reduce the risk of breakage of the cathode layer electrodes of the display structure, and thus can improve the continuity of the cathode layer electrodes and reduce the problem of display discontinuity caused by the breakage of the cathode layer electrodes. In the example of this application, the light-emitting layer 30 is directly formed on the display side of the substrate 10, and there is no need to first form a partition structure on the substrate 10, which can simplify the manufacturing process of the light-emitting layer 30. Since there is no partition structure, the sudden change in the thickness of the display structure can be reduced. When forming the cathode connection layer 40, the coating structure of the cathode connection layer 40 is not easily broken, and further, the problem of breakage of the cathode layer electrodes can be reduced.

[0057] In some examples, the anode 21 includes a first anode 211, and the light-emitting layer 30 includes a first light-emitting layer 311. The first anode 211 can be used as the anode 21 of any one of the RGB three-color organic light-emitting materials, and the first light-emitting layer 311 serves as the light-emitting layer 30 of the sub-pixel. Please refer to Figure 3 and Figure 4 , in this example, step S300 includes:

[0058] S310: Form a first light-emitting material layer 31 on the display side of the substrate 10, and the first light-emitting material layer 31 covers the side of the anode 21 facing away from the substrate 10.

[0059] As Figure 3(3a - 3c), the first light - emitting material layer 31 can be any one of the RGB three - color organic light - emitting materials. In this example, processes such as evaporation can be used to form the first light - emitting material layer 31. The first light - emitting material layer 31 covers the surface of the anode 21 facing away from the substrate 10, so that the first light - emitting material layer 31 forms a film structure on the display side of the substrate 10. The first light - emitting material layer 31 in this example can also cover the cathode auxiliary layer 22.

[0060] S311: Form a first protective layer 50 on the side of the first light - emitting material layer 31 facing away from the substrate 10.

[0061] As Figure 3 (3d), the first protective layer 50 is disposed on the side of the first light - emitting material layer 31 facing away from the substrate 10, forming a film layer on the surface of the first light - emitting material layer 31. The first protective layer 50 in this example can be used as a sacrificial layer, and during etching, the first protective layer 50 can be etched away. The first protective layer in this example can be made of a resin material soluble in water or alcohol.

[0062] S312: Dispose a first resist layer 51 on the side of the first protective layer 50 facing away from the substrate 10, and the first resist layer 51 is disposed corresponding to the position of the first anode 211.

[0063] As Figure 3 (3e), the first resist layer 51 is disposed on the side of the first protective layer 50 facing away from the substrate 10. The first resist layer 51 can be a positive photoresist. The first resist layer 51 is disposed corresponding to the position of the first anode 211, and is used to protect the first protective layer 50 and the first light - emitting material layer 31 at the position of the first anode 211.

[0064] S313: Remove the first resist layer 51 and the first protective layer 50 and the first light - emitting material layer 31 outside the corresponding position of the first resist layer 51, and the remaining first light - emitting material layer 31 forms the first light - emitting layer 311.

[0065] As Figure 3 (3f), in this example, the first resist layer 51 and the first protective layer 50 and the first light - emitting material layer 31 outside the corresponding position of the first resist layer 51 can be removed by an etching process. During etching, the first light - emitting material layer 31 at the corresponding position of the first resist layer 51 is not etched, and the first protective layer 50 at the corresponding position of the first resist layer 51 is not etched, or partially etched away. The first light - emitting material layer 31 at the corresponding position of the first resist layer 51 is retained to form the first light - emitting layer 311. Optionally, in this example, after performing step S313, the remaining first protective layer 50 can be removed. The cathode connection layer 40 can cover the side of the first light - emitting layer 311 and the cathode auxiliary layer 22 facing away from the substrate 10, and connect the first light - emitting layer 311 and the cathode auxiliary layer 22 respectively.

[0066] In this example, the first protective layer serves as a sacrificial layer, which can protect the first light-emitting material layer 31, physically isolate the first light-emitting material layer 31, and reduce the etching of the first light-emitting material layer 31 during processes such as photolithography. In this example, by using the first resist layer 51, since the first protective layer and the first light-emitting material layer at the corresponding position of the first resist layer 51 are protected by the first resist layer, a first light-emitting layer 311 connected to the first anode 211 can be formed at the corresponding position of the first resist layer 51; at the same time, the first light-emitting layer 311 will not be formed at the positions of other anodes and cathode auxiliary layers 22, which is convenient for forming other light-emitting layers in subsequent processes. In this example, the first light-emitting layer can be formed at the corresponding position of the first resist layer without using a shadow mask of a fine metal mask (FMM). Through the above patterning process, a high-resolution display panel with a high aperture ratio can be manufactured; since the first light-emitting layer can be formed separately, the contrast and display quality of the display panel can be improved, and thus the clarity of the display panel can be improved.

[0067] In some examples, the anode 21 further includes a second anode 212 spaced apart from the first anode 211. The second anode 212 in this example can be disposed adjacent to the first anode 211 or arranged on the display side of the substrate 10 according to a preset position. The light-emitting layer 30 further includes a second light-emitting layer 321 spaced apart from the first light-emitting layer 311. The second light-emitting layer 321 in this example can be an organic light-emitting material layer of a color different from that of the first light-emitting layer 311. Please refer to Figure 5 and Figure 6 , after step S313, the manufacturing method further includes:

[0068] S3131: Form a second light-emitting material layer 32 on the display side of the substrate 10, and the second light-emitting material layer 32 covers the first protective layer 50 and the side of the second anode 212 facing away from the substrate 10.

[0069] As Figure 5 (5a), the second light-emitting material layer 32 is formed on the display side of the substrate 10 to form a film layer covering the first protective layer 50 and the second anode 212 on the display side of the substrate 10. The second light-emitting material layer 32 in this example can be an organic light-emitting material different from the above-mentioned first light-emitting material layer 31. The second light-emitting material layer 32 in this example can also cover the cathode auxiliary layer 22.

[0070] S3132: Form a second protective layer 60 on the side of the second light-emitting material layer 32 facing away from the substrate 10.

[0071] As Figure 5(5b), A second protective layer 60 is formed on the side of the second light-emitting material layer 32 facing away from the substrate 10. The second protective layer 60 can serve as a sacrificial layer. The second protective layer 60 in this example can be made of the same material as the first protective layer 50 in the above example, or can be made of a different material.

[0072] S3133: A second resist layer 61 is formed on the side of the second protective layer 60 facing away from the substrate 10. The second resist layer 61 is disposed corresponding to the positions of the first anode 211 and the second anode 212.

[0073] As Figure 5 (5c), The second resist layer 61 is disposed on the side of the second protective layer 60 facing away from the substrate 10. The second resist layer 61 can be made of a positive photoresist. The second resist layer 61 is disposed corresponding to the positions of the first anode 211 and the second anode 212, and is used to protect the first protective layer 50 and the first light-emitting layer 311 at the position of the first anode 211. At the same time, it can also protect the second protective layer 60 and the second light-emitting material layer 32 at the position of the second anode 212.

[0074] S3134: Remove the second resist layer 61, and remove the second protective layer 60 and the second light-emitting material layer 32 except for the positions corresponding to the second anode 212. The remaining second light-emitting material layer 32 forms the second light-emitting layer 321.

[0075] As Figure 5 (5d), In this example, the second resist layer 61, the second protective layer 60 and the second light-emitting material layer 32 corresponding to the position of the first anode 211 of the second resist layer 61 can be removed by an etching process. At the same time, the first protective layer 50 and the first light-emitting layer 311 are not etched; the second protective layer 60 at the position corresponding to the second anode 212 is not etched, or is partially etched, and the second light-emitting material layer 32 at the position corresponding to the second anode 212 is not etched to form the second light-emitting layer 321; the second protective layer 60 and the second light-emitting material layer 32 at other positions are etched away. The cathode connection layer 40 is respectively connected to the first light-emitting layer 311, the second light-emitting layer 321 and the cathode auxiliary layer 22. Optionally in this example, after performing step S3134, the remaining second protective layer 60 at the position corresponding to the second anode 212 can be removed so that the cathode connection layer can cover the end face of the second light-emitting layer 321 facing away from the substrate 10.

[0076] In this example, the second protective layer serves as a sacrificial layer, which can protect the second light-emitting material layer 32, physically isolate the second light-emitting material layer 32, and reduce the etching of the second light-emitting material layer 32 during processes such as lithography. In this example, by setting the second resist layer 61, since the second protective layer and the second light-emitting material layer at the corresponding positions of the second resist layer 61 are protected by the second resist layer, the first light-emitting layer is maintained in a preset state; a second light-emitting layer 321 connected to the second anode 212 is formed at the position corresponding to the second anode 212; at the same time, the second light-emitting layer 321 will not be formed at the positions of other anodes and the cathode auxiliary layer 22, which can facilitate the formation of other light-emitting layers in subsequent processes. In this example, the second light-emitting layer can be formed at the corresponding position of the second resist layer without using a shadow mask of a fine metal mask (FMM). Through the above patterning process, a high-resolution display panel with a high aperture ratio can be manufactured; since the first light-emitting layer and the second light-emitting layer can be formed separately, the contrast and display quality of the display panel can be improved, and thus the clarity of the display panel can be enhanced.

[0077] Please refer to Figure 7 (7a-7d) and Figure 8 , in some examples, the anode 21 further includes a third anode 213 spaced apart from the first anode 211 and the second anode 212; the light-emitting layer 30 further includes a third light-emitting layer 331 spaced apart from the first light-emitting layer 311 and the second light-emitting layer 321. The third anode can be the anode 21 of any one of the RGB three-color organic light-emitting materials, and the third light-emitting layer serves as the light-emitting layer 30 of the sub-pixel. After performing step S3134, the manufacturing method further includes:

[0078] S3135: Form a third light-emitting material layer 33 on the display side of the substrate, and the third light-emitting material layer 33 covers the first protective layer 50, the second protective layer 60, and the side of the third anode 213 facing away from the substrate.

[0079] As Figure 7 (7a), the third light-emitting material layer 33 can be any one of the RGB three-color organic light-emitting materials. In this example, processes such as evaporation can be used to form the third light-emitting material layer 33. The third light-emitting material layer 33 covers the surface of the anode facing away from the substrate, so that the third light-emitting material layer 33 forms a film structure on the display side of the substrate. The third light-emitting material layer 33 in this example can also cover the cathode auxiliary layer 22.

[0080] S3136: Form a third protective layer 62 on the side of the third light-emitting material layer 33 facing away from the substrate.

[0081] As Figure 7(7b), The third protective layer 62 is disposed on the side of the third light-emitting material layer 33 away from the substrate, forming a film layer on the surface of the third light-emitting material layer 33. The third protective layer 62 in this example can be used as a sacrificial layer, and can be etched away during etching. The third protective layer 62 in this example can be made of a resin material soluble in water or alcohol.

[0082] S3137: Form a third resist layer 63 on the side of the third protective layer 62 away from the substrate. The third resist layer 63 is disposed corresponding to the positions of the first anode, the second anode, and the third anode 213.

[0083] As Figure 7 (7c), The third resist layer 63 is disposed on the side of the third protective layer 62 away from the substrate. The third resist layer 63 can be made of a positive photoresist. The third resist layer 63 is disposed corresponding to the positions of the first anode, the second anode, and the third anode 213, and is used to protect the first protective layer 50 and the first light-emitting layer 311 at the position of the first anode. At the same time, it can also protect the second protective layer 60 and the second light-emitting material layer at the position of the second anode, and can also protect the third protective layer 62 and the third light-emitting material layer 33 at the position of the third anode 213.

[0084] S3138: Remove the third resist layer 63, and remove the third protective layer 62 and the third light-emitting material layer 33 outside the corresponding position of the third anode 213. The remaining third light-emitting material layer 33 forms the third light-emitting layer 331.

[0085] In this example, the cathode connection layer 40 is also connected to the third light-emitting layer 331.

[0086] As Figure 7 (7d), In this example, the third resist layer 63, the third protective layer 62 and the third light-emitting material layer 33 corresponding to the position of the third anode 213 can be removed by an etching process. At the same time, the first protective layer 50 and the first light-emitting layer 311, the second protective layer 60 and the second light-emitting layer 321 are not etched; the third protective layer 62 corresponding to the position of the third anode 213 is not etched, or partially etched, and the third light-emitting material layer 33 corresponding to the position of the third anode 213 is not etched to form the third light-emitting layer 331; the third protective layer 62 and the third light-emitting material layer 33 at other positions are etched away. The cathode connection layer 40 is respectively connected to the first light-emitting layer 311, the second light-emitting layer 321, the third light-emitting layer 331, and the side of the cathode auxiliary layer 22 away from the substrate. Optionally in this example, after performing step S3138, the remaining third protective layer 62 at the corresponding position of the third anode 213 can be removed so that the cathode connection layer 40 can cover the end face of the third light-emitting layer 331 away from the substrate.

[0087] In this example, the third protective layer 62 serves as a sacrificial layer, which can protect the third light-emitting material layer 33, physically isolate the third light-emitting material layer 33, and reduce the etching of the third light-emitting material layer 33 during processes such as photolithography. In this example, by providing the third resist layer 63, since the third protective layer 62 and the third light-emitting material layer 33 at the corresponding positions of the third resist layer 63 are protected by the third resist layer 63, the third light-emitting layer 331 is maintained in a preset state; a third light-emitting layer 331 connected to the third anode 213 is formed at the position corresponding to the third anode 213; meanwhile, the third light-emitting layer 331 is not formed at the positions of other anodes and the cathode auxiliary layer 22. In this example, the third light-emitting layer 331 can be formed at the corresponding position of the third resist layer 63 without using a shadow mask of a fine metal mask (FMM). Through the above patterning process, a high-resolution display panel with a high aperture ratio can be manufactured; since the first light-emitting layer 311, the second light-emitting layer 321, and the third light-emitting layer 331 can be formed separately, the contrast and display quality of the display panel can be improved, and thus the clarity of the display panel can be enhanced.

[0088] Please refer to Figure 7 , in some examples, after performing step S3134, the manufacturing method further includes removing the remaining first protective layer 50, second protective layer 60, and third protective layer 62, so that the sides of the first light-emitting layer 311, second light-emitting layer 321, and third light-emitting layer 331 facing away from the substrate 10 are exposed, and then performing the above step S400. In this example, the cathode connection layers in the above step S400 respectively cover and connect the first light-emitting layer, the second light-emitting layer, the third light-emitting layer, and the cathode auxiliary layer.

[0089] Such as Figure 7 (7d - 7e), in this example, after performing the above step S3138, a certain amount of the first protective layer 50 remains on the side of the first light-emitting layer 311 facing away from the substrate 10, a certain amount of the second protective layer 60 remains on the side of the second light-emitting layer 321 facing away from the substrate 10, and a certain amount of the third protective layer may remain on the side of the third light-emitting layer facing away from the substrate 10. In this example, by removing the remaining first protective layer 50 and third protective layer 62, it is convenient to form the cathode connection layer subsequently, so that the cathode connection layer covers the first light-emitting layer 311, the second light-emitting layer 321, and the third light-emitting layer 331. In this example, the first protective layer, the second protective layer, and the third protective layer can be dissolved in water or alcohol to remove them.

[0090] Please refer to Figure 9 , in some examples, the anode 21 includes a first anode 211, and the light-emitting layer includes a first light-emitting layer 311; the first anode 211 can serve as the anode 21 of any one of the RGB three-color organic light-emitting materials, and the first light-emitting layer 311 serves as the light-emitting layer 30 of the sub-pixel. Please refer toFigure 10 and Figure 11 , step S300 includes:

[0091] S320: Form a first light-emitting material layer 31 on the display side of the substrate 10, and the first light-emitting material layer 31 covers the side of the first anode 211 facing away from the substrate 10.

[0092] As Figure 10 (10a), the first light-emitting material layer 31 can be any one of the RGB three-color organic light-emitting materials. In this example, processes such as evaporation can be used to form the first light-emitting material layer 31. The first light-emitting material layer 31 covers the surface of the anode 21 facing away from the substrate 10, so that the first light-emitting material layer 31 forms a film structure on the display side of the substrate 10. The first light-emitting material layer in this example can also cover the surface of the cathode auxiliary layer facing away from the substrate 10.

[0093] S321: Sequentially form a first cathode layer 41 and a fourth protective layer 70 on the side of the first light-emitting material layer 31 facing away from the substrate 10.

[0094] As Figure 10 (10b), the first cathode layer 41 can be made of the same material as the above-mentioned cathode connection layer 40, or other cathode layer materials can be used. The first cathode layer 41 forms a film layer on the display side of the substrate 10 and covers the first anode 211.

[0095] The fourth protective layer 70 is provided on the side of the first cathode layer 41 facing away from the first anode 211 and forms a film layer on the side of the first cathode layer 41 facing away from the first anode 211. The fourth protective layer 70 in this example can be at least one of SiO or SiN, or other materials can be used. The fourth protective layer 70 in this example is used to protect the first cathode layer 41 and the first light-emitting material layer 31. In some examples, the fourth protective layer 70 can be multiple layers. Taking the case where there are two fourth protective layers 70 provided on the side of the first cathode layer 41 facing away from the first light-emitting material layer 31 as an example, the two fourth protective layers 70 can be of the same material or different materials.

[0096] S322: Form a fourth resist layer 71 on the side of the fourth protective layer 70 facing away from the first cathode layer 41, and the fourth resist layer 71 is disposed corresponding to the position of the first anode 211.

[0097] As Figure 10 (10c), the fourth resist layer 71 can be a positive photoresist. The fourth resist layer 71 is disposed corresponding to the position of the first anode 211 to protect the fourth protective layer 70, the first cathode layer 41, and the first light-emitting material layer 31 at the position of the first anode 211.

[0098] S323: Remove the fourth resist layer 71, the fourth protective layer 70, the first cathode layer 41, and the first light-emitting material layer 31 except for the positions corresponding to the fourth resist layer 71. The remaining first light-emitting material layer 31 forms the first light-emitting layer 311.

[0099] As Figure 10 (10d - 10e), in this example, the fourth resist layer 71 is removed; under the protection of the fourth resist layer 71, the fourth protective layer 70, the first cathode layer 41, and the first light-emitting material layer 31 outside the fourth resist layer 71 are removed, so that the remaining first light-emitting material layer 31 at the position corresponding to the first anode 211 forms the first light-emitting layer 311, and the remaining first cathode layer 41 covers the side of the first light-emitting layer 311 facing away from the substrate 10. Optionally, in this example, the cathode connection layer 40 is respectively connected to the first light-emitting layer 311, the first cathode layer 41, and the cathode auxiliary layer 22. The first cathode layer 41 in this example can be used as an intermediate cathode layer between the cathode connection layer and the first light-emitting layer 311. When the cathode connection layer is connected to the first cathode layer, the cathode conduction of the pixel where the first light-emitting layer 311 is located can be achieved. Since the first cathode layer covers the first light-emitting layer and is connected to the cathode connection layer, the continuity of the cathode connection of the display structure can be improved.

[0100] In this example, by using the fourth resist layer 71, the first light-emitting layer 311 connected to the first anode 211 can be formed at the position corresponding to the fourth resist layer 71, and the first cathode layer 41 can be formed; at the same time, the first light-emitting layer 311 and the first cathode layer 41 will not be formed at the positions of other anodes and the cathode auxiliary layer 22, which can facilitate the formation of other light-emitting layers in subsequent processes. In this example, the first light-emitting layer can be formed at the position corresponding to the fourth resist layer without using a shadow mask of a fine metal mask (FMM). Through the above patterning process, a high-resolution display panel with a high aperture ratio can be manufactured; since the first light-emitting layer can be formed separately, the contrast and display quality of the display panel can be improved, and thus the clarity of the display panel can be improved.

[0101] In some examples, the anode 21 further includes a second anode 212 spaced apart from the first anode 211. The second anode 212 in this example can be disposed adjacent to the first anode 211 or arranged on the display side of the substrate 10 according to a preset position. The light-emitting layer 30 further includes a second light-emitting layer 321 spaced apart from the first light-emitting layer 311. The second light-emitting layer 321 in this example can be an organic light-emitting material layer of a color different from that of the first light-emitting layer 311. Please refer to Figure 12 and Figure 13 , after performing step S323, the manufacturing method further includes:

[0102] S3231: Form a second light-emitting material layer 32 on the display side of the substrate 10, and the second light-emitting material layer 32 covers the fourth protective layer 70 and the side of the second anode 212 facing away from the substrate 10.

[0103] As Figure 12 (12a), the second light-emitting material layer 32 is a film layer formed on the display side of the substrate 10, and covers the fourth protective layer 70 and the second anode 212. Optionally in this example, the second light-emitting material layer may also cover the cathode auxiliary layer. The second light-emitting material layer 32 in this example may be an organic light-emitting material different from the above-mentioned first light-emitting material layer 31.

[0104] S3232: Sequentially form a second cathode layer 42 and a fifth protective layer 80 on the side of the second light-emitting material layer 32 facing away from the substrate 10.

[0105] As Figure 12 (12b), the second cathode layer 42 may be made of the same material as the above-mentioned cathode connection layer 40 or the first cathode layer 41, or may also use other cathode layer materials. The second cathode layer 42 forms a film layer on the display side of the substrate 10 and covers the second anode 212, the cathode auxiliary layer 22, and the fourth protective layer 70.

[0106] The fifth protective layer 80 is provided on the side of the second cathode layer 42 facing away from the second anode 212, and forms a film layer on the side of the second cathode layer 42 facing away from the second anode 212. The fifth protective layer 80 in this example may be at least one of SiO or SiN, or may also use other materials. The fifth protective layer 80 in this example is used to protect the second cathode layer 42 and the second light-emitting material layer 32. In some examples, the fifth protective layer 80 may be multiple layers. Taking the example that there are two fifth protective layers 80 provided on the side of the second cathode layer 42 facing away from the second light-emitting material layer 32, the two fifth protective layers 80 may be of the same material or different materials.

[0107] S3233: Form a fifth resist layer 81 on the side of the fifth protective layer 80 facing away from the second cathode layer 42, and the fifth resist layer 81 is disposed corresponding to the position of the second anode 212.

[0108] As Figure 12 (12c), the fifth resist layer 81 may use a positive photoresist. The fifth resist layer 81 is disposed corresponding to the position of the second anode 212 to protect the fifth protective layer 80, the second cathode layer 42, and the second light-emitting material layer 32 at the position of the second anode 212.

[0109] S3234: Remove the fifth resist layer 81, the fifth protective layer 80, the second cathode layer 42, and the second light-emitting material layer 32 except for the positions corresponding to the fifth resist layer 81, and the remaining second light-emitting material layer 32 forms the second light-emitting layer 321.

[0110] As Figure 12 (12d - 12e), in this example, the fifth resist layer 81 is removed; under the protection of the fifth resist layer 81, the fifth protection layer 80, the second cathode layer 42, and the second light-emitting material layer at positions other than the fifth resist layer 81 are removed, so that the remaining second light-emitting material layer at the corresponding position of the second anode 212 forms the first light-emitting layer 311, and the remaining second cathode layer 42 covers the side of the second light-emitting layer facing away from the substrate 10. Optionally in this example, the cathode connection layer 40 is respectively connected to the first cathode layer 41, the second cathode layer 42, and the cathode auxiliary layer 22. By using the fifth resist layer 81 in this example, a second light-emitting layer 321 connected to the second anode 212 can be formed at the corresponding position of the fifth resist layer 81, and the second cathode layer 42 can be formed; at the same time, no second light-emitting layer and second cathode layer 42 will be formed at the positions of other anodes and the cathode auxiliary layer 22, which can facilitate the formation of other light-emitting layers in subsequent processes.

[0111] Please refer to Figure 14 and Figure 15 , in some examples, the anode 21 further includes a third anode 213 spaced apart from the first anode 211 and the second anode 212; the light-emitting layer 30 further includes a third light-emitting layer 331 spaced apart from the first light-emitting layer 311 and the second light-emitting layer 321; after performing the above step S3234, the manufacturing method further includes:

[0112] S3235: Form a third light-emitting material layer 33 on the display side of the substrate 10, and the third light-emitting material layer 33 covers the fourth protection layer 70, the fifth protection layer, and the side of the third anode 213 facing away from the substrate 10.

[0113] As Figure 14 (14a), the third light-emitting material layer 33 is a film layer formed on the display side of the substrate 10, and covers the fourth protection layer 70, the fifth protection layer, and the third anode 213. Optionally in this example, the third light-emitting material layer 33 can also cover the cathode auxiliary layer. The third light-emitting material layer 33 in this example can be an organic light-emitting material different from the above-mentioned first light-emitting material layer 31.

[0114] S3236: Sequentially form a third cathode layer 43 and a sixth protection layer 82 on the side of the third light-emitting material 33 layer facing away from the substrate.

[0115] As Figure 14 (14b), the third cathode layer 43 can be made of the same material as the above-mentioned cathode connection layer 40 or the first cathode layer 41, or can also use other cathode layer materials. The third cathode layer 43 forms a film layer on the display side of the substrate 10, and can cover the third anode, the cathode auxiliary layer 22, and the fifth protection layer.

[0116] The sixth protective layer 82 is disposed on the side of the third cathode layer facing away from the third anode, and forms a film layer on the side of the third cathode layer facing away from the third anode. In this example, the sixth protective layer 82 can be made of at least one of SiO or SiN, or other materials. The sixth protective layer 82 in this example is used to protect the third cathode layer and the third light-emitting material layer. In some examples, the sixth protective layer 82 can be multi-layered. Taking the example that there are two sixth protective layers 82 disposed on the side of the third cathode layer facing away from the third light-emitting material layer 33, the two sixth protective layers 82 can be of the same material or different materials.

[0117] S3237: Form a sixth resist layer 83 on the side of the sixth protective layer 82 facing away from the second cathode layer, and the sixth resist layer 83 is disposed corresponding to the position of the third anode 213.

[0118] Such as Figure 14 (14c), the sixth resist layer 83 can be made of a positive photoresist. The sixth resist layer 83 is disposed corresponding to the position of the third anode to protect the sixth protective layer, the third cathode layer, and the third light-emitting material layer at the position of the third anode.

[0119] S3238: Remove the sixth resist layer 83 and the sixth protective layer 82, the third cathode layer 43, and the third light-emitting material layer 33 outside the corresponding position of the sixth resist layer 83, and the remaining third light-emitting material layer 33 forms the third light-emitting layer 331.

[0120] Optionally in this example, the cathode connection layer also connects the third light-emitting layer 331 and the third cathode layer 43.

[0121] Such as Figure 14 (14d - 14e), in this example, the sixth resist layer 83 is removed; under the protection of the sixth resist layer 83, the sixth protective layer, the third cathode layer, and the third light-emitting material layer outside the sixth resist layer 83 are removed, so that the remaining third light-emitting material layer at the position corresponding to the third anode forms the third light-emitting layer, and the remaining third cathode layer covers the side of the third light-emitting layer facing away from the substrate 10. Optionally in this example, the cathode connection layer 40 connects the first cathode layer 41, the second cathode layer 42, the third cathode layer, and the cathode auxiliary layer 22 respectively. In this example, by using the sixth resist layer 83, a third light-emitting layer connected to the third anode can be formed at the position corresponding to the sixth resist layer 83, and the third cathode layer can be formed; at the same time, no third light-emitting layer and third cathode layer will be formed at the positions of other anodes and the cathode auxiliary layer 22.

[0122] Please refer to Figure 16 and Figure 17 , in some examples, after step S3234, the manufacturing method further includes:

[0123] S324: Form a first encapsulation layer 90 on the display side of the substrate 10, and the first encapsulation layer 90 covers the side of the fourth protective layer 70, the fifth protective layer 80, the sixth protective layer, and the cathode auxiliary layer 22 facing away from the substrate 10.

[0124] As Figure 16 (16a), the first encapsulation layer 90 is a film layer formed on the display side of the substrate 10 to protect the device.

[0125] S325: Open first vias 91 in the first encapsulation layer 90 and the fourth protective layer 70 respectively, and the first vias 91 penetrate through the first encapsulation layer 90 and the fourth protective layer 70.

[0126] As Figure 16 (16b - 16c), one end of the first via 91 penetrates to the end face of the first encapsulation layer 90 on the side facing away from the substrate 10 at the corresponding position of the fourth protective layer 70, and the other end penetrates to some end faces of the fourth protective layer 70 facing the substrate 10.

[0127] S326: Open second vias 92 in the first encapsulation layer 90 and the fifth protective layer 80 respectively, and the second vias 92 penetrate through the first encapsulation layer 90 and the fifth protective layer 80.

[0128] As Figure 16 (16b - 16c), one end of the second via 92 penetrates to the end face of the first encapsulation layer 90 on the side facing away from the substrate 10 at the corresponding position of the fifth protective layer 80, and the other end penetrates to some end faces of the fifth protective layer 80 facing the substrate 10.

[0129] S327: Open third vias 93 in the first encapsulation layer and the sixth protective layer respectively, and the third vias 93 penetrate through the first encapsulation layer and the sixth protective layer.

[0130] As Figure 16 (16b - 16c), one end of the third via 93 penetrates to the end face of the first encapsulation layer 90 on the side facing away from the substrate 10 at the corresponding position of the sixth protective layer, and the other end penetrates to some end faces of the sixth protective layer facing the substrate 10.

[0131] S328: Open a fourth via 94 in the first encapsulation layer 90, and the fourth via 94 penetrates to the cathode auxiliary layer 22.

[0132] As Figure 16 (16b - 16c), one end of the fourth via 94 penetrates to the end face of the first encapsulation layer 90 on the side facing away from the substrate 10 at the corresponding position of the cathode auxiliary layer 22, and the other end penetrates to the cathode auxiliary layer 22.

[0133] The first vias 91, second vias 92, third vias 93, and fourth vias 94 in the examples of this application can be straight vias or beveled vias. It can be understood that the order of steps S325 to S328 in the examples of this application can be executed in the above order or in any other arbitrary order.

[0134] Optionally, in this example, the cathode connection layer 40 covers the first encapsulation layer 90, the cathode connection layer 40 passes through the first vias 91, second vias 92, third vias 93, and fourth vias 94, and is connected to the first cathode layer 41, second cathode layer 42, third cathode layer, and cathode auxiliary layer 22.

[0135] As Figure 16 (16d), in this example, the cathode connection layer 40 is formed on the display side of the substrate 10, and the cathode connection layer 40 covers the first encapsulation layer 90. The cathode connection layer 40 can cover the inner wall surfaces of the first vias 91, second vias 92, third vias, and fourth vias 94, and is connected to the first cathode layer 41, second cathode layer 42, third cathode layer, and cathode auxiliary layer 22 to form the cathode layer structure of the display structure.

[0136] In this example, since the first cathode layer 41 corresponds to the first light-emitting layer 311, the second cathode layer 42 corresponds to the second light-emitting layer 321, the third cathode layer corresponds to the third light-emitting layer, and at the same time, the cathode connection layer 40 is connected through the cathode auxiliary layer 22. On the one hand, the cathode layer resistance of the display structure can be reduced, and on the other hand, the problem of cathode layer breakage caused by the relatively thin cathode layer coating can be reduced.

[0137] As Figure 16 (16d), in some examples, after step S400, the manufacturing method further includes forming a second encapsulation layer 95 on the display side of the substrate 10, and the second encapsulation layer 95 covers the side of the cathode connection layer 40 facing away from the substrate 10. The second encapsulation layer 95 in this example can be formed after the above step S3138 or step S328, and the second encapsulation layer 95 is used to protect the entire electrical device.

[0138] This application also proposes an example of an OLED display structure, including a substrate 10, an anode 21, a cathode auxiliary layer 22, a cathode connection layer 40, and a plurality of light-emitting layers 30. The substrate 10 has a display side; the anode 21 is disposed on the substrate 10; the cathode auxiliary layer 22 and the anode 21 are disposed on the substrate 10 at intervals, and the cathode auxiliary layer 22 and the anode 21 are formed by patterning a metal layer 20 on the display side of the substrate 10; the plurality of light-emitting layers 30 are respectively disposed on the side of the anode 21 facing away from the substrate 10; the cathode connection layer 40 is disposed on the display side of the substrate 10 and is respectively connected to the cathode auxiliary layer 22 and the plurality of light-emitting layers 30.

[0139] In the example of this application, the substrate 10 can serve as the main structure of the display structure. The substrate 10 has two relatively arranged surfaces, and one of the surfaces is the display side surface of the substrate 10. In the example of this application, the above-mentioned driving circuit layer 11 can be arranged on the display side of the substrate 10.

[0140] The anode 21 and the cathode auxiliary layer 22 are formed on the display side of the substrate 10, and the anode 21 and the cathode auxiliary layer 22 can be formed by etching. The anode 21 and the cathode auxiliary layer 22 are spaced apart from each other to be insulated from each other. In the example of this application, a plurality of anodes 21 and a plurality of cathode auxiliary layers 22 can be formed. In the example of this application, the shape of the relative positions of the anode 21 and the cathode auxiliary layer 22 can be determined as needed.

[0141] A plurality of light-emitting layers 30 are respectively arranged on the side of the plurality of anodes 21 facing away from the substrate 10. The plurality of light-emitting layers 30 can be any one of RGB three-color organic light-emitting materials. In the example of this application, the light-emitting layer 30 is directly formed on the display side of the substrate 10, and there is no need to first form a partition structure on the substrate 10, which can simplify the manufacturing process of the light-emitting layer 30; since there is no partition structure, the thickness change of the display structure can be reduced. When the cathode connection layer 40 is formed, the coating structure of the cathode connection layer 40 is not easily broken, and further, the problem of cathode layer electrode breakage can be reduced.

[0142] The cathode connection layer is a film layer formed on the side of the plurality of light-emitting layers 30 facing away from the substrate 10, and the cathode connection layer is simultaneously connected to the cathode auxiliary layer 22. In the example of this application, by using the metal layer 20 to form the anode 21 and the cathode auxiliary layer 22 and connecting the cathode auxiliary layer to the cathode connection layer, it can help reduce the cathode layer resistance of the display structure, thereby reducing the power consumption of the display structure; in the example of this application, by forming the metal layer 20 on the display side of the substrate 10 and sharing the manufacturing process of the anode 21 for the anode 21 and the cathode auxiliary layer 22, it can, without increasing the material cost, not increase the power consumption. Since the cathode auxiliary layer 22 is used to connect the cathode connection layer 40 in this example, it helps reduce the breakage risk of the cathode layer electrode of the display structure, and further, the continuity of the cathode layer electrode can be improved, and the problem of display discontinuity caused by cathode layer electrode breakage can be reduced.

[0143] Please refer to Figure 9 and Figure 16(16c-16d), in some examples, the display structure further includes a first encapsulation layer 90 and a plurality of intermediate cathode layers. The plurality of intermediate cathode layers are disposed on the display side of the substrate 10 and respectively cover the plurality of light-emitting layers 30 one by one; the first encapsulation layer 90 is disposed on the display side of the substrate 10 and covers the cathode auxiliary layer 22 and the plurality of intermediate cathode layers respectively; a first via 91, a second via 92, a third via 93, and a fourth via 94 are formed in the first encapsulation layer 90. Among them, the first via 91, the second via 92, and the third via 93 respectively penetrate through to the corresponding intermediate cathode layers one by one, and the fourth via 94 penetrates through to the cathode auxiliary layer. Optionally, in this example, the cathode connection layer covers the first encapsulation layer, and the cathode connection layer respectively passes through the first via, the second via, the third via 93, and the fourth via, and is respectively connected to the corresponding intermediate cathode layer and the cathode auxiliary layer. Optionally, the intermediate cathode layer in this example may include the first cathode layer, the second cathode layer, and the third cathode layer described in any of the above examples.

[0144] In some examples, the fourth protection layer 70, the fifth protection layer 80, and the sixth protection layer 82 described in any of the above examples are disposed on the display side of the substrate 10. Among them, the fourth protection layer 70, the fifth protection layer 80, and the sixth protection layer 82 are respectively disposed corresponding to the first cathode layer, the second cathode layer, and the third cathode layer, and the first encapsulation layer 90 is located on the side of the fourth protection layer 70, the fifth protection layer 80, and the sixth protection layer away from the substrate. A first via 91 is formed in the first encapsulation layer 90 and the fourth protection layer 70 respectively; a second via 92 is formed in the first encapsulation layer 90 and the fifth protection layer 80 respectively; a third via 93 is formed in the first encapsulation layer 90 and the sixth protection layer respectively; a fourth via 94 penetrating through to the cathode auxiliary layer 22 is further formed in the first encapsulation layer 90; the cathode connection layer 40 covers the first encapsulation layer 90, and the cathode connection layer 40 passes through the first via 91, the second via 92, and the fourth via 94, and is connected to the first cathode layer 41, the second cathode layer 42, and the cathode auxiliary layer 22.

[0145] In this example, since the first cathode layer 41 corresponds to the first light-emitting layer 311, the second cathode layer 42 corresponds to the second light-emitting layer 321, the third cathode layer corresponds to the third light-emitting layer, and at the same time, the cathode connection layer 40 is connected through the cathode auxiliary layer 22. On the one hand, the cathode layer resistance of the display structure can be reduced, and on the other hand, the problem of cathode layer breakage caused by the relatively thin cathode layer coating can be reduced.

[0146] The above are only the embodiments of the present application, and do not limit the patent scope of the present application accordingly. Any equivalent structure or equivalent process transformation made by using the content of the specification and drawings of the present application, or directly or indirectly applied to other related technical fields, shall be equally included in the patent protection scope of the present application.

Claims

1. A method for preparing an OLED display structure, characterized in that, it comprises the following steps: Providing a substrate, and forming a metal layer on the display side of the substrate; the metal layer is a coating covering the surface of the display side of the substrate; Patterning the metal layer to form an anode and a cathode auxiliary layer insulated from the anode; Directly forming a light-emitting layer on the side of the anode facing away from the substrate, and not forming a partition structure; And Forming a cathode connection layer on the display side of the substrate, with an intermediate cathode layer respectively disposed on the side of each light-emitting layer facing away from the substrate, a first encapsulation layer disposed on the display side of the substrate, the first encapsulation layer covering the intermediate cathode layer and the side of the cathode auxiliary layer facing away from the substrate, the cathode connection layer being located on the side of the first encapsulation layer facing away from the intermediate cathode layer, and the cathode connection layer passing through the first encapsulation layer and connecting the intermediate cathode layer and the cathode auxiliary layer respectively.

2. The preparation method according to claim 1, characterized in that, the anode includes a first anode, the light-emitting layer includes a first light-emitting layer, and the intermediate cathode layer includes a first cathode layer; the step of directly forming a light-emitting layer on the side of the anode facing away from the substrate includes: Forming a first light-emitting material layer on the display side of the substrate, the first light-emitting material layer covering the side of the first anode facing away from the substrate; Sequentially forming a first cathode layer and a fourth protective layer on the side of the first light-emitting material layer facing away from the substrate; Forming a fourth resist layer on the side of the fourth protective layer facing away from the first cathode layer, the fourth resist layer being disposed corresponding to the position of the first anode; and Removing the fourth resist layer and the fourth protective layer, the first cathode layer, and the first light-emitting material layer except for the positions corresponding to the fourth resist layer, and the remaining first light-emitting material layer forms the first light-emitting layer; wherein, the cathode connection layer connects the first cathode layer and the cathode auxiliary layer respectively.

3. The preparation method according to claim 2, characterized in that, the anode further includes a second anode spaced apart from the first anode; the light-emitting layer further includes a second light-emitting layer spaced apart from the first light-emitting layer, and the intermediate cathode layer further includes a second cathode layer; after the step of removing the fourth resist layer and the fourth protective layer, the first cathode layer, and the first light-emitting material layer except for the positions corresponding to the fourth resist layer, and the remaining first light-emitting material layer forms the first light-emitting layer, the preparation method further includes: Forming a second light-emitting material layer on the display side of the substrate, the second light-emitting material layer covering the fourth protective layer and the side of the second anode facing away from the substrate; Sequentially forming a second cathode layer and a fifth protective layer on the side of the second light-emitting material layer facing away from the substrate; Forming a fifth resist layer on the side of the fifth protective layer facing away from the second cathode layer, the fifth resist layer being disposed corresponding to the position of the second anode; and Removing the fifth resist layer and the fifth protective layer, the second cathode layer, and the second light-emitting material layer except for the positions corresponding to the fifth resist layer, and the remaining second light-emitting material layer forms the second light-emitting layer; Wherein, the cathode connection layer also connects the cathode auxiliary layer and the second cathode layer.

4. The manufacturing method according to claim 3, characterized in that the anode further includes a third anode spaced apart from the first anode and the second anode; the light-emitting layer further includes a third light-emitting layer spaced apart from the first light-emitting layer and the second light-emitting layer, and the intermediate cathode layer further includes a third cathode layer; after the step of removing the fifth protective layer, the second cathode layer, and the second light-emitting material layer except for the positions corresponding to the fifth resist layer, and leaving the second light-emitting material layer to form the second light-emitting layer, the manufacturing method further includes: forming a third light-emitting material layer on the display side of the substrate, the third light-emitting material layer covering the fourth protective layer, the fifth protective layer, and the side of the third anode facing away from the substrate; forming a third cathode layer and a sixth protective layer in sequence on the side of the third light-emitting material layer facing away from the substrate; forming a sixth resist layer on the side of the sixth protective layer facing away from the third cathode layer, the sixth resist layer being disposed corresponding to the position of the third anode; and removing the sixth protective layer, the third cathode layer, and the third light-emitting material layer except for the positions corresponding to the sixth resist layer, and leaving the third light-emitting material layer to form the third light-emitting layer; wherein, the cathode connection layer also connects the cathode auxiliary layer and the third cathode layer.

5. The manufacturing method according to claim 4, characterized in that after the step of removing the sixth protective layer, the third cathode layer, and the third light-emitting material layer except for the positions corresponding to the sixth resist layer, and leaving the third light-emitting material layer to form the third light-emitting layer, the manufacturing method further includes: forming the first encapsulation layer on the display side of the substrate, the first encapsulation layer covering the fourth protective layer, the fifth protective layer, the sixth protective layer, and the side of the cathode auxiliary layer facing away from the substrate; and forming first vias in the first encapsulation layer and the fourth protective layer respectively, the first vias penetrating through the first encapsulation layer and the fourth protective layer; forming second vias in the first encapsulation layer and the fifth protective layer respectively, the second vias penetrating through the first encapsulation layer and the fifth protective layer; forming third vias in the first encapsulation layer and the sixth protective layer respectively, the third vias penetrating through the first encapsulation layer and the sixth protective layer; forming a fourth via in the first encapsulation layer, the fourth via penetrating through to the cathode auxiliary layer; wherein, the cathode connection layer covers the first encapsulation layer, and the cathode connection layer also passes through the first via, the second via, the third via, and the fourth via, and connects the first cathode layer, the second cathode layer, the third cathode layer, and the cathode auxiliary layer.

6. The manufacturing method according to any one of claims 1 to 5, characterized in that after the step of forming a cathode connection layer on the display side of the substrate, the cathode connection layer connecting the cathode auxiliary layer, the manufacturing method further includes: A second encapsulation layer is formed on the display side of the substrate, and the second encapsulation layer covers the side of the cathode connection layer facing away from the substrate.

7. An OLED display structure, characterized in that, comprising: a substrate having a display side; an anode disposed on the substrate; a cathode auxiliary layer spaced from the anode on the substrate, the cathode auxiliary layer and the anode being formed by patterning a metal layer on the display side of the substrate; a plurality of light-emitting layers respectively disposed on the side of the anode facing away from the substrate, wherein the plurality of light-emitting layers are directly formed on the anode and no partition structure is formed; a plurality of intermediate cathode layers disposed on the display side of the substrate and respectively covering the plurality of light-emitting layers one by one; a cathode connection layer disposed on the display side of the substrate and respectively connecting the cathode auxiliary layer and the plurality of intermediate cathode layers; a first encapsulation layer; disposed on the display side of the substrate and respectively covering the cathode auxiliary layer and the plurality of intermediate cathode layers; the cathode connection layer is located on the side of the first encapsulation layer facing away from the intermediate cathode layer, and the cathode connection layer passes through the first encapsulation layer and respectively connects the intermediate cathode layer and the cathode auxiliary layer.

8. The display structure according to claim 7, characterized in that, a first via, a second via, a third via and a fourth via are formed in the first encapsulation layer, the first via, the second via and the third via respectively penetrate through to the plurality of intermediate cathode layers one by one, and the fourth via penetrates through to the cathode auxiliary layer; the cathode connection layer covers the first encapsulation layer, and the cathode connection layer also respectively passes through the first via, the second via, the third via and the fourth via and respectively connects the corresponding intermediate cathode layer and the cathode auxiliary layer.

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