A method for improving the reliability of a TFT display panel

Abstract

The application discloses a method for improving the reliability of a TFT display panel, comprising the steps of: locating failed TFT transistors and non-failed TFT transistors in an abnormal TFT display panel; detecting the failed TFT transistors to determine whether the failed TFT transistors have characteristic drift; if the failed TFT transistors have characteristic drift, detecting the non-failed TFT transistors to determine target waveband light causing the failed TFT transistors to have characteristic drift; and dynamically adjusting process parameters of the TFT transistors in the TFT display panel when the TFT display panel is prepared, so that the optical band gap of the TFT transistors at the target waveband light is within a preset target band gap range. The method can improve the reliability of the TFT display panel.

Description

Technical Field

[0001] This invention relates to TFT display technology, and more particularly to a method for improving the reliability of TFT display panels. Background Technology

[0002] As existing TFT display panels are used over time, their display quality gradually deteriorates, eventually leading to display abnormalities. The main reason for this phenomenon is the characteristic drift of the TFT transistors, which reduces the switching ratio of the TFT transistors. Consequently, the display pixels cannot turn on and off in a timely manner according to the signal voltage requirements, thus causing display abnormalities.

[0003] TFT transistors have poor photostability and are prone to aging under light exposure, which can lead to characteristic drift. Therefore, it is of great significance to detect and determine the wavelength range of light that causes TFT transistor characteristic drift and to improve the TFT transistor process for this wavelength range in order to improve the reliability of TFT display panels. Summary of the Invention

[0004] To address the shortcomings of the prior art, the present invention provides a method for improving the reliability of TFT display panels.

[0005] The technical problem to be solved by the present invention is achieved through the following technical solution: A method for improving the reliability of a TFT display panel includes the following steps: Step 100: Determine the target wavelength of light that causes the TFT transistor characteristic drift, and the target process parameters that can improve the TFT transistor characteristic drift; Step 200: When fabricating the TFT display panel, dynamically adjust the target process parameters of the TFT transistor so that the optical bandgap of the TFT transistor at the target wavelength is within the preset target bandgap range.

[0006] The present invention has the following beneficial effects: This patent identifies the target wavelength light that causes the drift of the TFT transistor characteristics by monitoring, as well as the target process parameters that can improve the drift of the TFT transistor characteristics. Then, during the fabrication of the TFT display panel, the target process parameters of the TFT transistor are dynamically adjusted by monitoring the optical band gap of the TFT transistor at the target wavelength light, thereby avoiding display abnormalities caused by the TFT display panel being irradiated by the target wavelength light and improving the reliability of the TFT display panel. Attached Figure Description

[0007] Figure 1 A flowchart illustrating the steps of the method provided by this invention.

[0008] Figure 2 for Figure 1 The flowchart of step 100 in the method shown is as follows.

[0009] Figure 3 for Figure 2 The flowchart of step 120 in the method shown is as follows.

[0010] Figure 4 for Figure 3 The flowchart of step 121 in the method shown is shown.

[0011] Figure 5 for Figure 2 The flowchart of step 130 in the method shown is as follows.

[0012] Figure 6 for Figure 5 The flowchart of step 131 in the method shown is shown.

[0013] Figure 7 for Figure 2 The flowchart of step 160 in the method shown is as follows.

[0014] Figure 8 for Figure 1 The flowchart of step 200 in the method shown is as follows. Implementation

[0015] The present invention will now be described in detail with reference to the accompanying drawings and embodiments, examples of which are shown in the drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain the present invention, and should not be construed as limiting the present invention.

[0016] In the description of this invention, it should be understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0017] Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first," "second," or "third" may explicitly or implicitly include one or more of that feature. In the description of this invention, "multiple" means two or more, unless otherwise explicitly specified.

[0018] In this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," "fixing," and "setting," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances. Example

[0019] like Figure 1 As shown, a method for improving the reliability of a TFT display panel includes the following steps: Step 100: Determine the target wavelength of light that causes the TFT transistor characteristic drift, and the target process parameters that can improve the TFT transistor characteristic drift.

[0020] In step 100, there are many wavelengths of light, but not all wavelengths of light can cause the characteristics of the TFT transistor to drift. Therefore, it is necessary to first determine the target wavelength of light that causes the characteristics of the TFT transistor to drift through testing. Similarly, there are many process parameters for the TFT transistor, but not all process parameters can improve the characteristics of the TFT transistor by adjusting them. Therefore, it is necessary to first determine the target process parameters that can improve the characteristics of the TFT transistor through testing.

[0021] Specifically, such as Figure 2 As shown, in step 100, the step of determining the target wavelength light that causes the TFT transistor characteristic drift is as follows: Step 110: Locate the failed and non-failed TFT transistors in the abnormal TFT display panel.

[0022] In step 110, the abnormal TFT display panel refers to a TFT display panel experiencing a display malfunction, primarily manifested as some pixels failing to light up normally. When locating the failed and non-failed TFT transistors, the abnormal TFT display panel can be visually inspected using a microscope, but is not limited to this method. Specifically, the abnormal TFT display panel is placed under the microscope, then the abnormal TFT display panel under the microscope is illuminated, and the light emission status of each pixel within the abnormal TFT display panel is observed through the microscope. The TFT transistor corresponding to the non-light-emitting pixel is the failed TFT transistor, and the TFT transistor corresponding to the light-emitting pixel is the non-failed TFT transistor.

[0023] Step 120: Detect the failed TFT transistor to determine whether the failed TFT transistor has experienced characteristic drift.

[0024] In step 120, the abnormal TFT display panel includes an array substrate and a color filter substrate arranged opposite each other. The array substrate and the color filter substrate are sealed together by a frame, and the space enclosed by the array substrate, the color filter substrate and the frame is filled with liquid crystal material. A TFT array circuit is provided on the side of the array substrate facing the color filter substrate. The TFT array circuit includes the failed TFT transistor and the non-failed TFT transistor.

[0025] To facilitate the detection of the failed TFT transistors and the non-failed TFT transistors, the color filter substrate is first peeled off from the array substrate before detection, and then the liquid crystal material on the array substrate is removed to expose the TFT array circuit.

[0026] Specifically, such as Figure 3 As shown, in step 120, the step of detecting the failed TFT transistor to determine whether the failed TFT transistor has experienced characteristic drift is as follows: Step 121: Monitor the characteristics of the failed TFT transistor to obtain the first characteristic curve of the failed TFT transistor.

[0027] In step 121, the first characteristic curve of the failed TFT transistor can be monitored and obtained using a TEG (Test Element Group) test device, which is a conventional test device used in the art to test panels and obtain various electrical parameters of the panels. It will not be described in detail here.

[0028] Specifically, such as Figure 4 As shown, in step 121, the steps for monitoring the characteristics of the failed TFT transistor to obtain the first characteristic curve of the failed TFT transistor are as follows: Step 1211: Drill holes at the positions corresponding to the gate, source and drain of the failed TFT transistor to expose the gate, source and drain of the failed TFT transistor respectively.

[0029] In step 1211, the TFT array circuit has multiple functional film layers stacked together, generally including a gate metal layer, a gate insulating layer, a semiconductor layer, a source / drain metal layer, a source / drain insulating layer, a pixel electrode layer, and a planarization layer. Since it has multiple functional film layers stacked together, the gate, source, and drain are not directly exposed from the surface of the failed TFT transistor. Therefore, it is necessary to perform a hole drilling process on the failed TFT transistor to expose the gate, source, and drain of the failed TFT transistor respectively for easy monitoring.

[0030] During drilling, a laser can be used, but is not limited to, to burn off the three positions on the failed TFT transistor corresponding to its gate, source, and drain, respectively, in order to remove the functional film layer covering the gate, source, and drain.

[0031] Step 1212: Inject electrode material into the holes corresponding to the gate, source and drain, respectively, so as to lead the gate, source and drain to the surface of the failed TFT transistor through the electrode material in the corresponding holes.

[0032] In step 1212, the electrode material may be, but is not limited to, silver paste. The silver paste is injected into the holes corresponding to the gate, source and drain, and then the silver paste in the holes is allowed to solidify. The gate, source and drain are then led out from the bottom of the hole to the top of the hole through the silver paste in the corresponding hole, until they reach the surface of the failed TFT transistor.

[0033] Step 1213: Connect the TEG testing equipment to the electrode materials corresponding to the gate, source, and drain, respectively, so as to obtain the first characteristic curve of the failed TFT transistor by monitoring the TEG testing equipment.

[0034] In step 1213, the three probes of the TEG test equipment are connected to the gate, source, and drain of the failed TFT transistor through the electrode material in the corresponding holes, respectively. The voltage value of the source is used as a parameter to obtain the relationship curve between the voltage value of the gate and the current value of the drain as the first characteristic curve.

[0035] Step 122: Compare the first characteristic curve with the preset target characteristic curve to determine whether the failed TFT transistor has experienced characteristic drift.

[0036] In step 122, the target characteristic curve is preset and compared with the first characteristic curve. Of course, errors are unavoidable, and the first characteristic curve and the target characteristic curve cannot be exactly the same. A first error range can be set. When the difference between the first characteristic curve and the target characteristic curve is within the first error range, it is determined that the failed TFT transistor has not experienced characteristic drift. When the difference between the first characteristic curve and the target characteristic curve is outside the first error range, it is determined that the failed TFT transistor has experienced characteristic drift.

[0037] Step 130: If the failed TFT transistor experiences characteristic drift, the non-failed TFT transistor is detected to determine the target wavelength of light that caused the characteristic drift of the failed TFT transistor.

[0038] In step 130, if the failed TFT transistor does not exhibit characteristic drift, it indicates that the failure of the failed TFT transistor is not caused by aging due to light exposure, but may be caused by scratches, breakage, or other reasons. In this case, the method can be terminated directly, or other methods can be used to further determine the failure cause of the failed TFT transistor.

[0039] Specifically, such as Figure 5 As shown, in step 130, the step of detecting the non-failed TFT transistor to determine the target wavelength of light that causes the characteristic drift of the failed TFT transistor is as follows: Step 131: Irradiate the unfailed TFT transistor with a control light source and a test light source respectively, and monitor the characteristics of the unfailed TFT transistor to obtain the second characteristic curve and the third characteristic curve of the unfailed TFT transistor under the control light source and the test light source respectively, wherein the test light source lacks a certain wavelength of light compared to the control light source.

[0040] In step 131, the reference light source can be a full-band light source, whose wavelength range covers major bands such as infrared, visible and ultraviolet light. The test light source can be based on the reference light source by removing one of the ultraviolet, blue, green, red and infrared bands, in order to compare whether there are characteristic differences of the non-failed TFT transistor under the illumination of the reference light source and the test light source, and then determine whether the characteristic drift of the failed TFT transistor is caused by the missing band of light in the test light source.

[0041] Specifically, such as Figure 6As shown, in step 131, the unfailed TFT transistor is irradiated with a reference light source and a test light source respectively, and the characteristics of the unfailed TFT transistor are monitored to obtain the second characteristic curve and the third characteristic curve of the unfailed TFT transistor under the reference light source and the test light source respectively. The steps are as follows: Step 1311: Drill holes at the locations corresponding to the gate, source, and drain of the unfailed TFT transistor to expose the gate, source, and drain of the unfailed TFT transistor.

[0042] In step 1311, since the gate, source, and drain of the non-failed TFT transistor are not directly exposed due to the multiple functional film layers stacked on top of each other, it is necessary to perform a hole-drilling process on the non-failed TFT transistor to expose the gate, source, and drain of the non-failed TFT transistor respectively for easy monitoring.

[0043] Lasers can be used, but are not limited to, to burn off the functional film layers covering the gate, source, and drain of the non-failed TFT transistor at three locations corresponding to its gate, source, and drain, respectively.

[0044] Step 1312: Inject electrode material into the holes corresponding to the gate, source and drain, respectively, so as to lead the gate, source and drain to the surface of the unfailed TFT transistor through the electrode material in the holes.

[0045] In step 1312, the electrode material may be, but is not limited to, silver paste. The silver paste is injected into the holes corresponding to the gate, source and drain, and then the silver paste in the holes is allowed to solidify. The gate, source and drain are then led out from the bottom of the hole to the top of the hole through the silver paste in the corresponding hole, until they reach the surface of the unfailed TFT transistor.

[0046] Step 1313: Connect the TEG testing equipment to the electrode materials corresponding to the gate, source, and drain, respectively. Irradiate the unfailed TFT transistor with the reference light source and the test light source, respectively. Monitor and obtain the second characteristic curve and the third characteristic curve of the unfailed TFT transistor through the TEG testing equipment.

[0047] In step 1313, the three probes of the TEG test equipment are connected to the gate, source and drain of the unfailed TFT transistor through the electrode material in the corresponding holes, respectively. The voltage value of the source is used as a parameter to obtain the relationship curve between the voltage value of the gate and the current value of the drain as the second characteristic curve and the third characteristic curve.

[0048] Preferably, the TEG testing equipment monitors and obtains the second and third characteristic curves of the unfailed TFT transistor, and sequentially outputs positive and negative bias voltages to the unfailed TFT transistor for a predetermined duration to simulate the state of the unfailed TFT transistor after long-term operation. Then, it acquires the second and third characteristic curves of the unfailed TFT transistor under the positive and negative bias voltages at certain time intervals. The time interval for acquiring the second and third characteristic curves can be 0s, 400s, 1000s, 2000s, and 3600s after outputting the positive and negative bias voltages, etc., to observe the characteristic drift of the unfailed TFT transistor under the control light source with the positive and negative bias voltages at different operating times, and the characteristic drift of the unfailed TFT transistor under the test light source with the positive and negative bias voltages at different operating times.

[0049] Step 132: Compare the second characteristic curve with the third characteristic curve to determine whether there are characteristic differences in the non-failed TFT transistor under the control light source and the test light source.

[0050] In step 132, the characteristic states of the non-failed TFT transistor under the reference light source and the test light source can be categorized into three cases: the first case is that the non-failed TFT transistor does not experience characteristic drift under either the reference light source or the test light source; the second case is that the non-failed TFT transistor experiences characteristic drift under both the reference light source and the test light source; and the third case is that the non-failed TFT transistor experiences characteristic drift under the reference light source but not under the test light source. For the first two cases, the second characteristic curve is the same as or similar to the third characteristic curve, indicating that the non-failed TFT transistor does not exhibit characteristic differences under the reference light source and the test light source. For the last case, the second characteristic curve is different from the third characteristic curve, indicating that the non-failed TFT transistor exhibits characteristic differences under the reference light source and the test light source.

[0051] Because there are differences in optical parameters between the control light source and the test light source, these differences can cause errors in the characteristic curves. Even if both the control light source and the test light source cause characteristic drift in the non-failed TFT transistor, the second characteristic curve and the third characteristic curve cannot be exactly the same. Therefore, a second error range can be set. When the difference between the second characteristic curve and the third characteristic curve is within the second error range, it is determined that the non-failed TFT transistor has no characteristic difference under the control light source and the test light source. When the difference between the second characteristic curve and the third characteristic curve is outside the second error range, it is determined that the non-failed TFT transistor has characteristic differences under the control light source and the test light source.

[0052] Step 133: If the non-failed TFT transistor has different characteristics under the control light source and the test light source, then the missing wavelength of light in the test light source is determined as the target wavelength of light. If the non-failed TFT transistor does not have different characteristics under the control light source and the test light source, then another test light source is replaced and steps 310 to 330 are repeated, wherein the missing wavelength of light in different test light sources is different.

[0053] In step 133, if the non-failed TFT transistor does not show any characteristic difference under the control light source and the test light source, it indicates that the wavelength of light missing by the test light source is not the target wavelength of light that causes the characteristic drift of the failed TFT transistor. Therefore, it is necessary to replace the test light source and conduct the test again to further determine the wavelength of light of the target wavelength.

[0054] Specifically, in step 100, the steps for determining the target process parameters that can improve the characteristic drift of the TFT transistor are as follows: Step 140: Adjust the parameter value of one of the process parameters of the TFT transistor.

[0055] In step 140, the fabrication process of the TFT transistor includes multiple process parameters, such as the film thickness, film formation rate, film formation temperature, film formation humidity, film formation gas mixing ratio, etching rate, etching temperature, and etching solution mixing ratio of each functional film layer. Each process parameter has a corresponding parameter value, and the parameter values ​​of all process parameters together constitute the process parameters of the TFT transistor.

[0056] During adjustment, the process parameters of the failed TFT transistors and the non-failed TFT transistors in the abnormal display panel are used as the original parameters, and one of the process parameters is adjusted to form a new process parameter.

[0057] Step 150: Fabricate a new TFT transistor using the adjusted process parameters.

[0058] Step 160: Irradiate the new TFT transistor with the reference light source and monitor the characteristics of the new TFT transistor to obtain the fourth characteristic curve of the new TFT transistor under the reference light source.

[0059] Specifically, such as Figure 7 As shown, in step 160, the new TFT transistor is irradiated with the reference light source, and the characteristics of the new TFT transistor are monitored to obtain the fourth characteristic curve of the new TFT transistor under the reference light source. The steps are as follows: Step 161: Drill holes at the locations corresponding to the gate, source, and drain of the new TFT transistor to expose the gate, source, and drain of the new TFT transistor.

[0060] In step 161, since the new TFT transistor has multiple functional film layers stacked together, the gate, source and drain of the new TFT transistor are not directly exposed. Therefore, it is necessary to perform a hole-drilling process on the new TFT transistor to expose the gate, source and drain of the new TFT transistor respectively, so as to facilitate monitoring.

[0061] During drilling, a laser can be used, but is not limited to, to burn off three positions on the new TFT transistor corresponding to its gate, source, and drain, respectively, in order to remove the functional film layer covering the gate, source, and drain.

[0062] Step 162: Inject electrode material into the holes corresponding to the gate, source, and drain, respectively, so as to lead the gate, source, and drain to the surface of the new TFT transistor through the electrode material in the holes.

[0063] In step 162, the electrode material may be, but is not limited to, silver paste. The silver paste is injected into the holes corresponding to the gate, source, and drain, and then the silver paste in the holes is allowed to solidify. This allows the gate, source, and drain to be led out from the bottom of the hole to the top of the hole through the silver paste in the corresponding hole, until they reach the surface of the new TFT transistor.

[0064] Step 163: Connect the TEG testing equipment to the electrode materials corresponding to the gate, source, and drain, respectively. Irradiate the new TFT transistor with the reference light source and obtain the fourth characteristic curve of the new TFT transistor by monitoring with the TEG testing equipment.

[0065] In step 163, the three probes of the TEG test equipment are connected to the gate, source, and drain of the new TFT transistor through the electrode material in the corresponding holes, respectively. The relationship curve between the gate voltage and the drain current is obtained as the fourth characteristic curve, with the source voltage as a parameter.

[0066] Preferably, when the TEG testing equipment monitors and obtains the fourth characteristic curve of the new TFT transistor, it sequentially outputs a positive bias voltage and a negative bias voltage to the new TFT transistor for a predetermined duration to simulate the state of the new TFT transistor after long-term operation. Then, it acquires the fourth characteristic curve of the new TFT transistor under the positive bias voltage and the negative bias voltage at certain time intervals. The time interval for acquiring the fourth characteristic curve can be 0s, 400s, 1000s, 2000s, and 3600s after outputting the positive bias voltage and the negative bias voltage, etc., to observe the characteristic drift of the new TFT transistor under the reference light source when using the positive bias voltage and the negative bias voltage at different operating times.

[0067] Step 170: Compare the fourth characteristic curve with the second characteristic curve to determine whether the characteristic drift of the new TFT transistor has been improved.

[0068] In step 170, since the new TFT transistor and the non-failed TFT transistor use different process parameters, the difference in process parameters will cause errors in the characteristic curves. Even if the characteristic drift of the new TFT transistor is not improved, the fourth characteristic curve and the second characteristic curve cannot be exactly the same. Therefore, a third error range can be set. When the difference between the fourth characteristic curve and the second characteristic curve is within the third error range, it is determined that the characteristic drift of the TFT transistor has not been improved. When the difference between the fourth characteristic curve and the second characteristic curve is outside the third error range, it is determined that the characteristic drift of the new TFT transistor has been improved.

[0069] Step 180: If the characteristic drift of the new TFT transistor is improved, the adjusted process parameters are determined as the target process parameters. If the characteristic drift of the new TFT transistor is not improved, steps 140 to 180 are repeated, wherein the adjusted process parameters are different each time.

[0070] In step 180, the target process parameters determined by testing include the mixing ratio of each gas in the film-forming gas during the sputtering of the gate insulating layer. For example, if the gate insulating layer includes a silicon nitride film layer, ammonia and silane gas are used as film-forming gases in the film-forming chamber of the sputtering equipment during the sputtering of the silicon nitride film layer. As the mixing ratio of silane gas in the film-forming gas decreases, the improvement in the drift characteristics of the TFT transistor first increases and then decreases.

[0071] Step 200: When fabricating the TFT display panel, dynamically adjust the target process parameters of the TFT transistor so that the optical bandgap of the TFT transistor at the target wavelength is within the preset target bandgap range.

[0072] In step 200, since monitoring the characteristic curve of the TFT transistor requires destructive drilling of the TFT transistor, it is impossible to dynamically adjust the target process parameters of the TFT transistor by monitoring the characteristic curve in actual production. Therefore, an optical bandgap is needed to replace the characteristic curve to dynamically adjust the target process parameters of the TFT transistor in actual production. The optical bandgap is another optical parameter that can be monitored for the TFT transistor. Monitoring the optical bandgap does not require destructive processing of the TFT transistor, and the optical bandgap is related to the transistor characteristics. By monitoring the optical bandgap of the TFT transistor at the target wavelength, the target process parameters of the TFT transistor can be dynamically adjusted, which can prevent the TFT display panel from displaying abnormalities due to exposure to the target wavelength light, thereby improving the reliability of the TFT display panel.

[0073] Specifically, such as Figure 8 As shown, in step 200, during the fabrication of the TFT display panel, the target process parameters of the TFT transistor are dynamically adjusted to ensure that the optical bandgap of the TFT transistor at the target wavelength is within a preset target bandgap range. Step 210: Adjust the target process parameters of the TFT transistor.

[0074] In step 210, the process parameters of the failed TFT transistors and the non-failed TFT transistors in the abnormal display panel are used as the original parameters, and the target process parameters are adjusted to form new process parameters.

[0075] Step 220: Fabricate the TFT transistors of the TFT display panel using the adjusted process parameters.

[0076] Step 230: Calculate the optical bandgap of the TFT transistors of the TFT display panel at the target wavelength.

[0077] In step 230, after the TFT transistor of the TFT display panel completes the sputtering of the gate insulating layer, the transmittance of the gate insulating layer to the target wavelength light is first monitored using a spectrophotometer or other transmittance detection device corresponding to the target wavelength light. Then, based on the transmittance of the gate insulating layer, the optical band gap of the TFT transistor at the target wavelength light is calculated.

[0078] When calculating the optical band gap based on transmittance, the intercept method, tangent method, or other existing methods can be used. The calculation method for the optical band gap is existing technology and will not be described in detail here.

[0079] Step 240: Compare the calculated optical bandgap with the target bandgap range. If the calculated optical bandgap exceeds the target bandgap range, repeat steps 210 to 240. If the calculated optical bandgap does not exceed the target bandgap range, continue to use the adjusted process parameters to prepare the TFT transistors of the next TFT display panel.

[0080] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the embodiments of the present invention and not to limit them. Although the embodiments of the present invention have been described in detail with reference to preferred embodiments, those skilled in the art should understand that modifications or equivalent substitutions can still be made to the technical solutions of the embodiments of the present invention, and these modifications or equivalent substitutions cannot cause the modified technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method for improving the reliability of a TFT display panel, characterized in that, Includes the following steps: Step 100: Determine the target wavelength of light that causes the TFT transistor characteristic drift, and the target process parameters that can improve the TFT transistor characteristic drift; Step 200: When fabricating the TFT display panel, dynamically adjust the target process parameters of the TFT transistor so that the optical bandgap of the TFT transistor at the target wavelength is within the preset target bandgap range; In step 100, the steps for determining the target wavelength of light that causes the drift in TFT transistor characteristics are as follows: Step 110: Locate the failed and non-failed TFT transistors in the abnormal TFT display panel; Step 120: Detect the failed TFT transistor to determine whether the failed TFT transistor has experienced characteristic drift; Step 130: If the failed TFT transistor experiences characteristic drift, then the non-failed TFT transistor is detected to determine the target wavelength of light that caused the characteristic drift of the failed TFT transistor; In step 200, the step of dynamically adjusting the target process parameters of the TFT transistor during the fabrication of the TFT display panel to ensure that the optical bandgap of the TFT transistor at the target wavelength is within a preset target bandgap range is as follows: Step 210: Adjust the target process parameters of the TFT transistor; Step 220: Fabricate the TFT transistors of the TFT display panel using the adjusted process parameters; Step 230: Calculate the optical bandgap of the TFT transistors of the TFT display panel at the target wavelength light; Step 240: Compare the calculated optical bandgap with the target bandgap range. If the calculated optical bandgap exceeds the target bandgap range, repeat steps 210 to 240. If the calculated optical bandgap does not exceed the target bandgap range, continue to use the adjusted process parameters to prepare the TFT transistors of the next TFT display panel.

2. The method according to claim 1, characterized in that, In step 120, the process of detecting the failed TFT transistor to determine whether the failed TFT transistor has experienced characteristic drift is as follows: Step 121: Monitor the characteristics of the failed TFT transistor to obtain the first characteristic curve of the failed TFT transistor; Step 122: Compare the first characteristic curve with the preset target characteristic curve to determine whether the failed TFT transistor has experienced characteristic drift.

3. The method according to claim 2, characterized in that, In step 121, the characteristics of the failed TFT transistor are monitored to obtain the first characteristic curve of the failed TFT transistor. The steps are as follows: Step 1211: Drill holes at the locations corresponding to the gate, source, and drain of the failed TFT transistor to expose the gate, source, and drain of the failed TFT transistor respectively. Step 1212: Inject electrode material into the holes corresponding to the gate, source, and drain, respectively, so as to lead the gate, source, and drain to the surface of the failed TFT transistor through the electrode material in the corresponding holes; Step 1213: Connect the TEG testing equipment to the electrode materials corresponding to the gate, source, and drain, respectively, so as to obtain the first characteristic curve of the failed TFT transistor by monitoring the TEG testing equipment.

4. The method according to claim 1, characterized in that, In step 130, the step of detecting the non-failed TFT transistor to determine the target wavelength of light that causes the characteristic drift of the failed TFT transistor is as follows: Step 131: Irradiate the unfailed TFT transistor with a reference light source and a test light source respectively, and monitor the characteristics of the unfailed TFT transistor to obtain the second characteristic curve and the third characteristic curve of the unfailed TFT transistor under the reference light source and the test light source respectively, wherein the test light source lacks a certain wavelength of light compared to the reference light source; Step 132: Compare the second characteristic curve with the third characteristic curve to determine whether there are any characteristic differences between the non-failed TFT transistor under the control light source and the test light source; Step 133: If the non-failed TFT transistor has different characteristics under the control light source and the test light source, then the missing wavelength of light in the test light source is determined as the target wavelength of light. If the non-failed TFT transistor does not have different characteristics under the control light source and the test light source, then another test light source is replaced and steps 310 to 330 are repeated, wherein the missing wavelength of light in different test light sources is different.

5. The method according to claim 4, characterized in that, In step 131, the unfailed TFT transistor is irradiated with a reference light source and a test light source, respectively, while the characteristics of the unfailed TFT transistor are monitored to obtain the second characteristic curve and the third characteristic curve of the unfailed TFT transistor under the reference light source and the test light source, respectively. The steps are as follows: Step 1311: Drill holes at the locations corresponding to the gate, source, and drain of the unfailed TFT transistor to expose the gate, source, and drain of the unfailed TFT transistor respectively. Step 1312: Inject electrode material into the holes corresponding to the gate, source, and drain, respectively, so as to lead the gate, source, and drain to the surface of the unfailed TFT transistor through the electrode material in the holes; Step 1313: Connect the TEG testing equipment to the electrode materials corresponding to the gate, source, and drain, respectively. Irradiate the unfailed TFT transistor with the reference light source and the test light source, respectively. Monitor and obtain the second characteristic curve and the third characteristic curve of the unfailed TFT transistor through the TEG testing equipment.

6. The method according to claim 4, characterized in that, In step 100, the steps for determining the target process parameters that can improve the characteristic drift of the TFT transistor are as follows: Step 140: Adjust the parameter value of one of the process parameters of the TFT transistor; Step 150: Fabricate new TFT transistors using the adjusted process parameters; Step 160: Irradiate the new TFT transistor with the reference light source and monitor the characteristics of the new TFT transistor to obtain the fourth characteristic curve of the new TFT transistor under the reference light source. Step 170: Compare the fourth characteristic curve with the second characteristic curve to determine whether the characteristic drift of the new TFT transistor has been improved; Step 180: If the characteristic drift of the new TFT transistor is improved, the adjusted process parameters are determined as the target process parameters. If the characteristic drift of the TFT transistor is not improved, steps 140 to 180 are repeated, wherein the adjusted process parameters are different each time.

7. The method according to claim 6, characterized in that, In step 160, the new TFT transistor is irradiated with the reference light source, and the characteristics of the new TFT transistor are monitored to obtain the fourth characteristic curve of the new TFT transistor under the reference light source. The steps are as follows: Step 161: Drill holes at the locations corresponding to the gate, source, and drain of the new TFT transistor to expose the gate, source, and drain of the new TFT transistor respectively. Step 162: Inject electrode material into the holes corresponding to the gate, source, and drain, respectively, so as to lead the gate, source, and drain to the surface of the new TFT transistor through the electrode material in the holes; Step 163: Connect the TEG testing equipment to the electrode materials corresponding to the gate, source, and drain, respectively. Irradiate the new TFT transistor with the reference light source and obtain the fourth characteristic curve of the new TFT transistor by monitoring with the TEG testing equipment.

8. The method according to claim 1, characterized in that, The TFT transistor includes a gate insulating layer, and the target process parameters include the mixing ratio of each gas in the film-forming gas during the sputtering deposition of the gate insulating layer.

Images