Manufacturing method of packaging board, packaging board

Abstract

Embodiments of the present application provide a packaging substrate and a manufacturing method thereof. The manufacturing method comprises: forming a through hole in a glass substrate; forming a seed layer on the surface of the glass substrate and the inner wall of the through hole, the seed layer comprising a first component on the surface of the glass substrate and a second component in the through hole; forming a metal structure on the surface of the seed layer, the metal structure comprising a redistribution structure on the surface of a first region of the first component, a bump on the surface of a second region of the first component, and a filling structure on the surface of the second component; and removing a part of the first component which is not covered by the metal structure. The manufacturing method has a simple process flow and low cost. The packaging substrate manufactured by the method has excellent electrical characteristics, low loss factor, and less application limitations, which is conducive to the application of 2.5D packaging and 3D packaging.

Description

Technical Field

[0001] This application relates to the field of packaging technology, and in particular to a method for manufacturing a packaging substrate and a packaging substrate manufactured using this method. Background Technology

[0002] As electronic products and devices increasingly demand higher speeds, smaller sizes, more integrated systems, and lower costs, the limitations of traditional packaging are becoming more and more apparent. Furthermore, with Moore's Law entering its later stages, it is becoming increasingly difficult to achieve improvements in cost, power consumption, and performance by shrinking device size. 2.5D and 3D packaging technologies, which are three-dimensional multi-chip stacking packaging processes, offer advantages such as ultra-high bandwidth, short interconnect distances, low voltage drop and power consumption, and high integration density. They can effectively reduce signal transmission delay and improve integrated circuit performance, making them one of the most popular advanced packaging technologies today.

[0003] Specifically, 2.5D packaging and 3D packaging involve laying multiple chips flat on an adapter board and forming a redistribution layer on the adapter board to achieve signal interconnection between different chips. Therefore, adapter board technology is a key technology for 2.5D / 3D packaging.

[0004] Currently, through-silicon via (TSV) adapter technology is relatively mature, but issues such as silicon substrate loss leading to degradation of high-frequency or high-speed signal transmission characteristics, high material costs, and complex processes limit its practical applications, thus affecting the application of 2.5D and 3D packaging. Summary of the Invention

[0005] In view of this, this application provides a method for manufacturing a packaging substrate and a packaging substrate manufactured using this method, the specific solution of which is as follows:

[0006] A method for manufacturing a packaging carrier board, the method comprising:

[0007] Forming through-holes in the glass substrate;

[0008] A seed layer is formed on the surface of the glass substrate and the inner wall of the through hole. The seed layer includes a first component located on the surface of the glass substrate and a second component located within the through hole.

[0009] A metal structure is formed on the surface of the seed layer, the metal structure including a redistribution structure on the surface of a first region of the first component, bumps on the surface of a second region of the first component, and a filling structure on the surface of the second component.

[0010] Remove the portion of the first component that is not covered by the metal structure.

[0011] Optionally, forming through-holes in the glass substrate includes:

[0012] Through-holes are formed in the glass substrate using laser-induced etching or deep reactive ion etching.

[0013] Optionally, laser-induced etching can be used to form through-holes in a glass substrate, including:

[0014] Selective directional laser modification is performed on a glass substrate to form a first region and a second region on the glass substrate, wherein the first region is the modified region in the glass substrate and the second region is the unmodified region in the glass substrate.

[0015] The glass substrate is then etched using a wet chemical etching method to form a through-hole in a first region on the glass substrate.

[0016] Optionally, the method further includes cleaning the glass substrate before forming the through-hole in the glass substrate.

[0017] Optionally, a metal structure is formed on the surface of the seed layer, the metal structure including a redistribution structure on the surface of a first region of the first component, bumps on the surface of a second region of the first component, and a filling structure on the surface of the second component including:

[0018] A dry film is formed on the surface of the portion of the seed layer located on the surface of the glass substrate;

[0019] The dry film is exposed and developed to remove the third region of the dry film, expose the first and second regions of the first component in the seed layer, and retain the fourth region 31 of the dry film to form a dry film pattern structure.

[0020] Using the dry film pattern structure as a mask, a metal structure is formed on the surface of the seed layer. The metal structure includes a redistribution structure on the surface of a first region of the first component, bumps on the surface of a second region of the first component, and a filling structure on the surface of the second component.

[0021] Remove the dry film pattern structure.

[0022] Optionally, in a direction perpendicular to the plane of the glass substrate, the thickness of the portion of the metal structure located on the surface of the first component is less than the thickness of the dry film.

[0023] Optionally, when removing the portion of the first component not covered by the metal structure, the removal time is a first time, which is longer than a second time, where the second time is the time it takes to remove the first component until the surface of the glass substrate is exposed.

[0024] Optionally, in the process of removing the portion of the first component not covered by the metal structure, the method may also remove a portion of the thickness of the metal structure located on the surface of the glass substrate.

[0025] Optionally, during the process of removing the portion of the first component not covered by the metal structure, the thickness of the portion of the metal structure located on the surface of the glass substrate that is removed is 1 micrometer.

[0026] A packaging carrier board, comprising:

[0027] A glass substrate having through holes;

[0028] A seed structure located on the surface of the glass substrate, the seed structure including a first seed structure located on the surface of the glass substrate and a second seed structure located on the sidewall of the through hole;

[0029] The redistribution structure located in the first sub-region of the surface of the first seed structure and the protrusion located in the second sub-region of the surface of the second seed structure;

[0030] The filling structure located on the surface of the second seed layer structure.

[0031] The packaging substrate and its fabrication method provided in this application employ glass through-hole (TGV) technology, which not only possesses excellent high-frequency electrical characteristics and a loss factor 2-3 orders of magnitude lower than silicon materials, but also facilitates the production of large-size, ultra-thin glass substrates at a lower cost. Furthermore, the packaging substrate and its fabrication method provided in this application have a simple process flow, do not require the deposition of insulating layers on the substrate surface and the inner wall of the TGV, exhibit strong mechanical stability, and have fewer application limitations, thus benefiting 2.5D and 3D packaging applications.

[0032] Furthermore, the packaging substrate and its manufacturing method provided in this application embodiment are formed in the same process step, whereby the redistribution layer, the bumps, and the filling structure are formed in the same step, thereby reducing the production cost of the packaging substrate and improving the production efficiency of the packaging substrate. Attached Figure Description

[0033] To more clearly illustrate the technical solutions in the embodiments of this application or related technologies, the drawings used in the description of the embodiments or prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of this application. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0034] The structures, proportions, sizes, etc., shown in the accompanying drawings are only for the purpose of assisting those skilled in the art in understanding and reading the content disclosed in the specification, and are not intended to limit the implementation conditions of this application. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in the proportions, or adjustments to the size, without affecting the effects and purposes that this application can produce, should still fall within the scope of the technical content disclosed in this application.

[0035] Figure 1 This is a flowchart illustrating a method for fabricating a packaging substrate according to an embodiment of this application.

[0036] Figures 2-8 This is a partial structural diagram of the packaging carrier board provided in one embodiment of this application, which is involved in the manufacturing process. Detailed Implementation

[0037] The embodiments of this application will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0038] Various modifications and variations can be made to this application without departing from its spirit or scope, which will be apparent to those skilled in the art. Therefore, this application is intended to cover modifications and variations falling within the scope of the corresponding claims (the claimed technical solutions) and their equivalents. It should be noted that the implementation methods provided in the embodiments of this application can be combined with each other without contradiction.

[0039] To make the above-mentioned objectives, features and advantages of this application more apparent and understandable, the application will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0040] As described in the background section, the degradation of high-frequency or high-speed signal transmission characteristics caused by silicon substrate loss, high material costs, and complex processes limit the practical application of through-silicon via (TSV) adapters, thus affecting the application of 2.5D and 3D packaging.

[0041] Compared to silicon, glass possesses superior high-frequency electrical properties and strong mechanical stability, making it a viable alternative. Therefore, through-glass via (TGV) technology has emerged. Specifically, compared to through-silicon via (TSV) technology, TGV offers the following advantages: superior high-frequency electrical properties; glass is an insulator with a dielectric constant approximately one-third that of silicon, and a loss factor 2-3 orders of magnitude lower; easy access to large-size, ultra-thin glass substrates, reducing costs; a simpler process flow, eliminating the need for insulating layer deposition on the substrate surface and the inner wall of the TGV; and strong mechanical stability.

[0042] Therefore, how to apply glass via technology to 2.5D and 3D packaging to fabricate packaging substrates has become a research hotspot in this field.

[0043] In view of this, embodiments of this application provide a method for manufacturing a packaging carrier board, such as... Figure 1 As shown, the method includes:

[0044] S1: As Figure 2 As shown, a through hole 11 is formed in the glass substrate 10.

[0045] Optionally, in one embodiment of this application, forming a through-hole in the glass substrate includes: forming a through-glass via (TGV) in the glass substrate.

[0046] Based on the above embodiments, in one embodiment of this application, forming a through hole in a glass substrate includes: forming a through hole in a glass substrate using laser-induced etching or deep reactive ion etching, but this application does not limit this, and it depends on the specific circumstances.

[0047] The following describes the method of forming through holes in a glass substrate using laser-induced etching as an example.

[0048] Specifically, in one embodiment of this application, forming through-holes in a glass substrate using laser-induced etching includes:

[0049] Selective directional laser modification is performed on a glass substrate to form a first region and a second region on the glass substrate. The first region is the modified region of the glass substrate, and the second region is the unmodified region of the glass substrate. Then, wet chemical etching is used to etch the glass substrate to form a through-hole in the first region of the glass substrate. It should be noted that, in this embodiment, during the etching process of the glass substrate using wet chemical etching, the etching rate of the modified region is much higher than that of the unmodified region. That is, during the etching process of the glass substrate using wet chemical etching, the etching rate of the first region is much higher than that of the second region.

[0050] Optionally, selective directional laser modification on a glass substrate can be performed using a laser drilling machine according to the design drawings. This application does not limit this, but depends on the specific circumstances.

[0051] It should be noted that traditional mask-based wet etching methods, due to their isotropic nature, always produce aperture-to-thickness ratios greater than 1, and cannot create micro-holes. Ordinary laser direct drilling processes not only have low throughput but also leave micro-cracks and residual thermal stress, all of which affect product lifespan. In contrast, this application's embodiment uses laser-induced etching to form through-holes on a glass substrate, simultaneously meeting the processing requirements of small aperture, large aspect ratio, fine pitch, and high consistency. Furthermore, the hole walls are smooth, free of micro-cracks, debris, and stress, facilitating the fabrication of highly reliable hole metallization processes.

[0052] Optionally, based on the above embodiments, in one embodiment of this application, the diameter of the through hole ranges from 45 micrometers to 55 micrometers, including the endpoint value.

[0053] Based on any of the above embodiments, in one embodiment of this application, the method further includes cleaning the glass substrate before forming the through-hole in the glass substrate to remove dust, oil, and other impurities from the surface of the glass substrate. Specifically, in one embodiment of this application, cleaning the glass substrate includes cleaning the glass substrate using a flatbed cleaning machine, but this application is not limited to this. In other embodiments of this application, other methods may be used to clean the glass substrate, depending on the specific circumstances.

[0054] Specifically, based on any of the above embodiments, in one embodiment of this application, the thickness of the glass substrate is 100 micrometers, but this application does not limit this and it depends on the specific circumstances.

[0055] S2: As Figure 3As shown, a seed layer 20 is formed on the surface of the glass substrate 10 and the inner wall of the through hole 11 to achieve through hole metallization. Specifically, in this embodiment, the seed layer 20 includes a first component 21 located on the surface of the glass substrate 10 and a second component 22 located within the through hole 11.

[0056] In one embodiment of this application, forming a seed layer on the surface of the glass substrate and the inner wall of the through hole includes sputtering the seed layer on the surface of the glass substrate and the inner wall of the through hole using a physical vapor deposition (PVD) process.

[0057] Optionally, in one embodiment of this application, the thickness of the seed layer is in the range of 780nm~820nm, so as to ensure the conductivity of the seed layer while avoiding excessive thickness of the seed layer, which would increase the manufacturing cost of the packaging substrate. However, this application does not limit this and it depends on the specific circumstances.

[0058] Specifically, in one embodiment of this application, the seed layer material includes at least one of the following metals: copper, aluminum, titanium, molybdenum, and chromium. The seed layer material may include one of these metals, or two of them. Optionally, in one embodiment of this application, the seed layer material is copper, but this application is not limited to this and the choice depends on the specific circumstances.

[0059] The following description uses copper as an example to illustrate the manufacturing method provided in the embodiments of this application.

[0060] Optionally, in one embodiment of this application, a physical vapor deposition (PVD) process is used. The process parameters for sputtering a seed layer on the glass substrate surface and the inner wall of the via include: a distance of 12 cm between the metal target and the glass substrate; a glass substrate transport speed of 0.1 m / min; an excitation current range of 1 A to 13 A and an excitation voltage range of 300 V to 700 V for the excitation gas used to bombard the target; a sputtering power range of 1 kW to 7 kW; argon as the protective gas and oxygen as the reactive gas during sputtering, with both the protective gas and reactive gas having a flow rate of 100 Sccm and a vacuum pressure of 1.8 × 10⁻¹ Pa; and a temperature range of 200°C to 300°C for the buffer chamber, 100°C to 200°C for the transition chamber, 50°C to 150°C for the sputtering chamber, and 0°C to 100°C for the wafer exit chamber. However, this application does not impose any restrictions on this matter; it depends on the specific circumstances.

[0061] S3: A metal structure is formed on the surface of the seed layer, the metal structure including a redistribution structure on the surface of a first region of the first component, a bump on the surface of a second region of the first component, and a filling structure on the surface of the second component.

[0062] Specifically, in one embodiment of this application, a metal structure is formed on the surface of the seed layer. The metal structure includes a redistribution structure located on the surface of a first region of the first component, bumps located on the surface of a second region of the first component, and a filling structure located on the surface of the second component, including:

[0063] like Figure 4 As shown, a dry film 30 is formed on the surface of the portion of the seed layer 20 located on the surface of the glass substrate 10, and the dry film 30 may also cover the through hole 11;

[0064] like Figure 5 As shown, the dry film is exposed and developed to remove the third region of the dry film, expose the first region 211 and the second region 212 of the first component 21 in the seed layer 20, and retain the fourth region 31 of the dry film to form a dry film pattern structure.

[0065] like Figure 6 As shown, a metal structure 40 is formed on the surface of the seed layer 20 using the dry film pattern structure as a mask. The metal structure 40 includes a redistribution structure 41 located on the surface of the first region of the first component, a bump 42 located on the surface of the second region of the first component, and a filling structure 43 located on the surface of the second component.

[0066] like Figure 7 As shown, the dry film pattern structure is removed.

[0067] It should be noted that, in order to correspond with the description of the packaging carrier board, in the above embodiment, the first region and the second region of the first component in the seed layer are named the first seed structure, the first region of the first component is the first sub-region of the first seed structure, the second region of the first component is the second sub-region of the first seed structure, the second component in the seed layer is named the second seed structure, and the first seed structure and the second seed structure constitute the seed structure.

[0068] Optionally, based on the above embodiments, in one embodiment of this application, forming a dry film on the surface of the portion of the seed layer located on the surface of the glass substrate includes using a roll forming process to form a dry film on the surface of the portion of the seed layer located on the surface of the glass substrate. However, this application does not limit this process and may vary depending on the specific circumstances.

[0069] Specifically, in one embodiment of this application, a roll forming process is used to form a dry film on the surface of the portion of the seed layer located on the glass substrate. The process parameters include: the set temperature of the roll forming roller is set to a range of 100℃ to 120℃; the roll forming temperature during film pressing is set to a range of 100℃ to 115℃; and the pressure difference between the upper and lower roll forming rollers is set to a range of 30 kgf / cm². 2 ~50 kgf / cm 2 The rotation speed of the pressure roller is 1.5 m / min ~ 2.5 m / min, and the settling time after pressing is 30 min ~ 60 min.

[0070] Specifically, in one embodiment of this application, the thickness of the dry film ranges from 24 micrometers to 26 micrometers, but this application does not limit it and it depends on the specific circumstances.

[0071] Based on any of the above embodiments, in one embodiment of this application, the dry film is exposed and developed to remove the third region of the dry film, expose the first and second regions of the first component in the seed layer, and retain the fourth region of the dry film to form a dry film pattern structure, including:

[0072] The dry film is patterned by exposure to form a third region and a fourth region on the dry film, wherein the third region is an unexposed region and the fourth region is an exposed region. The third region corresponds to the first region and the second region on the surface of the first component.

[0073] The dry film is developed to remove the third region of the dry film and retain the fourth region of the dry film, wherein the fourth region is the region of the dry film from which the third region has been removed.

[0074] Optionally, based on the above embodiments, in one embodiment of this application, patterning the dry film includes: using an exposure machine to pattern the dry film. Specifically, in one embodiment of this application, an LDI (laser direct imaging) exposure machine is used to pattern the dry film. The laser wavelength of the exposure machine is 355nm, and the exposure energy range is 40 mJ / cm². 2 ~80mj / cm 2 However, this application does not impose any restrictions on this, and it depends on the specific circumstances.

[0075] Based on any of the above embodiments, in one embodiment of this application, developing the dry film and removing the third region of the dry film includes developing the dry film with a developing solution to remove the third region of the dry film, so as to expose the surface of the portion of the seed layer corresponding to the third region, that is, to expose the surface of the first region and the second region of the first component in the seed layer.

[0076] Optionally, in one embodiment of this application, during the development of the dry film using a developing solution, the developing solution is a weak alkali, Na. 2 CO 3 Or K2CO 3 The solution formed by dissolving in deionized water contains a weak base, Na. 2 CO 3 Or K2CO 3 The concentration range is 0.8%~1.2%, the developer temperature is controlled at 28℃~32℃, and the developing spray pressure ranges from 1.0 kgf / cm². 2 ~2.0 kgf / cm 2 The developing point is 50%~60%.

[0077] Based on any of the above embodiments, in one embodiment of this application, a metal structure is formed on the surface of the seed layer using the dry film pattern structure as a mask. The metal structure includes a redistribution structure on the surface of a first region of the first component, bumps on the surface of a second region of the first component, and a filling structure on the surface of the second component. This filling structure is formed by electroplating the redistribution structure on the surface of the first region of the first component, the bumps on the surface of the second region of the first component, and the filling structure on the surface of the second component to fill the through-holes. It should be noted that in this embodiment, the dry film is an electroplating-resistant dry film.

[0078] Optionally, in one embodiment of this application, the material of the metal structure is copper, but this application is not limited to this. In other embodiments of this application, the material of the metal structure may also be other conductive materials, depending on the specific circumstances.

[0079] Specifically, in one embodiment of this application, in a direction perpendicular to the plane of the glass substrate, the thickness of the portion of the metal structure located on the surface of the first component is less than the thickness of the dry film. That is, in a direction perpendicular to the plane of the glass substrate, the redistribution structure is less than the thickness of the dry film, and the thickness of the bump is less than the thickness of the dry film, so as to avoid the metal structure forming on the upper surface of the dry film, thereby increasing the difficulty of removing the dry film.

[0080] Optionally, in one embodiment of this application, the thickness of the portion of the metal structure located on the surface of the first component in the direction perpendicular to the plane of the glass substrate ranges from 19 micrometers to 21 micrometers, but this application does not limit this and it depends on the specific circumstances.

[0081] Based on any of the above embodiments, in one embodiment of this application, removing the dry film pattern structure includes: removing the dry film pattern structure using a strong alkaline solution of NaOH. Optionally, during the process of removing the dry film pattern structure using the strong alkaline solution of NaOH, the concentration of the NaOH solution ranges from 2.0% to 3.0%, the solution temperature ranges from 45% to 55%, and the demolding pressure ranges from 2.0 kgf / cm². 2 ~3.0 kgf / cm 2 The water washing pressure range is 1.0 kgf / cm. 2 ~3.0 kgf / cm 2 The delamination point ranges from 50% to 60%. However, this application does not impose any limitation on this, and the specific value depends on the circumstances.

[0082] S4: As Figure 8 As shown, the portion of the first component not covered by the metal structure is removed to avoid short circuits of different redistribution structures 41 and different bumps 42 located in the first region of the first component, as well as to avoid short circuits of redistribution structures 41 and bumps 42.

[0083] Specifically, based on the above embodiments, in one embodiment of this application, the material of the first component is copper. In this embodiment, removing the portion of the first component not covered by the metal structure includes removing the portion of the first component not covered by the metal structure using a copper etching solution.

[0084] Optionally, in this embodiment of the application, when removing the portion of the first component not covered by the metal structure, the removal time is a first time, which is greater than a second time. The second time is the time for removing the first component until the glass substrate surface is exposed, so as to use an over-etching method to ensure that the portion of the first component not covered by the metal structure is etched cleanly, and to avoid the occurrence of short circuits in the redistribution structure, bump short circuits, or short circuits between the redistribution structure and bumps due to the presence of etching residue.

[0085] Based on the above embodiments, in one embodiment of this application, the method, in the process of removing the portion of the first component not covered by the metal structure by over-etching, also removes a portion of the thickness of the metal structure located on the surface of the glass substrate, so as to flatten the surface of the metal structure away from the glass substrate, thereby facilitating subsequent packaging.

[0086] Specifically, in one embodiment of this application, during the process of removing the portion of the first component not covered by the metal structure by over-etching, the thickness of the portion of the metal structure located on the surface of the glass substrate that is removed is 1 micrometer. However, this application does not limit this and it depends on the specific circumstances.

[0087] Accordingly, this application also provides a packaging carrier board, fabricated using the manufacturing method provided in any of the above embodiments. Specifically, continuing as follows... Figure 8 As shown, the packaging carrier includes:

[0088] A glass substrate 10 having through holes;

[0089] The seed structure 23 located on the surface of the glass substrate 10 includes a first seed structure 231 located on the surface of the glass substrate 10 and a second seed structure 232 located on the sidewall of the through hole.

[0090] The redistribution structure 41 located in the first sub-region 2311 on the surface of the first seed structure 231 and the protrusion 42 located in the second sub-region 2312 on the surface of the second seed structure 231;

[0091] Optionally, the filling structure 43 located on the surface of the second seed layer structure 232 completely fills the through hole.

[0092] Optionally, based on the above embodiments, in one embodiment of this application, the diameter of the through hole ranges from 45 micrometers to 55 micrometers, including the endpoint value, but this application does not limit it and it depends on the specific situation.

[0093] Specifically, based on any of the above embodiments, in one embodiment of this application, the thickness of the glass substrate is 100 micrometers, but this application does not limit this and it depends on the specific circumstances.

[0094] Optionally, in one embodiment of this application, the thickness of the seed structure is in the range of 780nm~820nm, so as to ensure the conductivity of the seed structure while avoiding excessive thickness of the seed structure, which would increase the manufacturing cost of the packaging substrate. However, this application does not limit this and it depends on the specific circumstances.

[0095] Specifically, in one embodiment of this application, the material of the seed structure includes at least one of the following metals: copper, aluminum, titanium, molybdenum, and chromium. The material of the seed structure may include one of these metals, or two of them. Optionally, in one embodiment of this application, the material of the seed structure is copper, but this application is not limited to this and the choice depends on the specific circumstances.

[0096] Optionally, based on any of the above embodiments, in one embodiment of this application, the thickness of the portion of the metal structure located on the surface of the first seed structure in the direction perpendicular to the plane of the glass substrate ranges from 19 micrometers to 21 micrometers, but this application does not limit this and it depends on the specific circumstances.

[0097] It should be noted that the packaging substrate provided in this application embodiment can be used for 2.5D packaging or 3D packaging of F2B (face-to-back) chips. This application does not limit this use and the choice depends on the specific circumstances. It should also be noted that compared to 3D packaging, 2.5D packaging has better heat dissipation and lower cost.

[0098] In summary, the packaging substrate and its fabrication method provided in this application employ glass through-hole (TGV) technology, which not only possesses excellent high-frequency electrical characteristics with a loss factor 2-3 orders of magnitude lower than silicon materials, but also facilitates the production of large-size, ultra-thin glass substrates at a lower cost. Furthermore, the packaging substrate and its fabrication method provided in this application have a simple process flow, do not require the deposition of insulating layers on the substrate surface and the inner wall of the TGV, exhibit strong mechanical stability, and have fewer application limitations, making them beneficial for 2.5D and 3D packaging applications.

[0099] Furthermore, the packaging substrate and its manufacturing method provided in this application embodiment are formed in the same process step, whereby the redistribution layer, the bumps, and the filling structure are formed in the same step, thereby reducing the production cost of the packaging substrate and improving the production efficiency of the packaging substrate.

[0100] The various embodiments in this specification are described in a progressive, parallel, or combined manner. Each embodiment focuses on its differences from other embodiments, and similar or identical parts between embodiments can be referred to interchangeably. For the apparatuses disclosed in the embodiments, since they correspond to the methods disclosed in the embodiments, the descriptions are relatively simple, and relevant parts can be referred to the method section.

[0101] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that an article or apparatus comprising a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such an article or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the article or apparatus that includes the aforementioned element.

[0102] The above description of the disclosed embodiments enables those skilled in the art to make or use this application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of this application. Therefore, this application is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A method for manufacturing a packaging carrier board, characterized in that, The method includes: Forming through-holes in the glass substrate; A seed layer is formed on the surface of the glass substrate and the inner wall of the through hole. The seed layer includes a first component located on the surface of the glass substrate and a second component located within the through hole. A metal structure is formed on the surface of the seed layer, the metal structure including a redistribution structure on the surface of a first region of the first component, bumps on the surface of a second region of the first component, and a filling structure on the surface of the second component. Remove the portion of the first component not covered by the metal structure. When removing the portion of the first component not covered by the metal structure, the removal time is a first time, which is longer than a second time. The second time is the time for removing the first component until the surface of the glass substrate is exposed, so as to avoid the occurrence of short circuits in the redistribution structure, bumps, or redistribution structure and bumps due to the presence of etching residue. In the process of removing the portion of the first component not covered by the metal structure by over-etching, the method also removes a portion of the thickness of the metal structure located on the surface of the glass substrate, so as to flatten the surface of the metal structure on the side away from the glass substrate.

2. The manufacturing method according to claim 1, characterized in that, Forming through-holes in a glass substrate includes: Through-holes are formed in the glass substrate using laser-induced etching or deep reactive ion etching.

3. The manufacturing method according to claim 2, characterized in that, Forming through-holes in a glass substrate using laser-induced etching includes: Selective directional laser modification is performed on a glass substrate to form a first region and a second region on the glass substrate, wherein the first region is the modified region in the glass substrate and the second region is the unmodified region in the glass substrate. The glass substrate is then etched using a wet chemical etching method to form a through-hole in a first region on the glass substrate.

4. The manufacturing method according to claim 1, characterized in that, The method further includes cleaning the glass substrate before forming through holes in the glass substrate.

5. The manufacturing method according to claim 1, characterized in that, A metal structure is formed on the surface of the seed layer. The metal structure includes a redistribution structure on the surface of a first region of the first component, bumps on the surface of a second region of the first component, and a filling structure on the surface of the second component comprising: A dry film is formed on the surface of the portion of the seed layer located on the surface of the glass substrate; The dry film is exposed and developed to remove the third region of the dry film, expose the first and second regions of the first component in the seed layer, and retain the fourth region of the dry film to form a dry film pattern structure. Using the dry film pattern structure as a mask, a metal structure is formed on the surface of the seed layer. The metal structure includes a redistribution structure on the surface of a first region of the first component, bumps on the surface of a second region of the first component, and a filling structure on the surface of the second component. Remove the dry film pattern structure.

6. The manufacturing method according to claim 5, characterized in that, In a direction perpendicular to the plane of the glass substrate, the thickness of the portion of the metal structure located on the surface of the first component is less than the thickness of the dry film.

7. The manufacturing method according to claim 1, characterized in that, During the process of removing the portion of the first component not covered by the metal structure, the thickness of the portion of the metal structure located on the surface of the glass substrate that is removed is 1 micrometer.

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