Device and method for determining the orientation of a magnet and a joystick

Abstract

A method (1900) of determining an orientation (a, b) of a magnet pivotable about a reference point having a predefined position relative to a silicon substrate, the method comprising: providing a silicon substrate; determining a first magnetic field gradient in a first direction / a second magnetic field gradient in a second direction; determining a first angle a / a second angle b based on the first / second magnetic field gradient and a first / second correction value (D1 to D8). A sensor device configured to perform the method. A sensor system comprising such a sensor device and a magnet, optionally connected to a joystick.

Description

Technical Field

[0001] This invention generally relates to the field of magnetic position sensor systems, devices, and methods, and more specifically, to a magnetic position sensor system for measuring the orientation of a magnet pivotable about a fixed reference point. The invention also relates to a position sensor system wherein the magnet is connected to a joystick. Background Technology

[0002] Magnetic position sensor systems, particularly linear or angular position sensor systems, are known in the art. Many variations of position sensor systems exist that satisfy one or more of the following requirements: use of simple or inexpensive magnetic structures; use of simple or inexpensive sensor devices; ability to measure over a relatively large range; ability to measure with high accuracy; requirement of only simple algorithms; ability to measure at high speed; high robustness to positioning errors; high robustness to external interference fields; provision of redundancy; ability to detect errors; ability to detect and correct errors; good signal-to-noise ratio (SNR); having only one degree of freedom (e.g., translation or rotation); having two degrees of freedom (e.g., one translation and one rotation, or two rotations), etc.

[0003] In many known systems, the system has only one degree of motion freedom (e.g., rotation about a single axis or translation along a single axis).

[0004] Magnetic position sensor systems in which the magnet has at least two degrees of freedom are also known in the art. For example, EP21159804.0, filed February 28, 2021, discloses a magnet that is movable along an axis and rotatable about said axis; or US2021 / 0110239(A1) discloses a circuit that includes at least one trained neural network for determining information about the position, attitude, or orientation of the magnet. These examples illustrate that position sensor systems in which the magnet has at least two degrees of freedom are much more complex than systems with only one degree of freedom.

[0005] There is always room for improvement or replacement. Summary of the Invention

[0006] The purpose of embodiments of the present invention is to provide sensor devices, position sensor systems, and methods for determining the orientation (α, β) of a magnet.

[0007] The purpose of embodiments of the present invention is to provide sensor devices, position sensor systems, and methods for determining the orientation (α, β) of a cylindrical magnet that can pivot about a fixed reference point. The fixed reference point may be located at a predefined height above or below a semiconductor substrate ("above" means on the same side of the substrate as the magnet, and "below" means on the opposite side of the substrate from the magnet).

[0008] The purpose of embodiments of the present invention is to provide sensor devices, position sensor systems, and methods for determining the orientation (α, β) of the axis of an axially magnetized cylindrical magnet that is pivotable about a reference position located on a semiconductor substrate.

[0009] In a preferred embodiment, the orientation of the magnet is determined in a highly accurate manner and has reduced sensitivity to one or more of the following: temperature changes, installation tolerances, magnet demagnetization, and external interference fields (also known as "stray fields").

[0010] The purpose of specific embodiments of the present invention is to provide a joystick comprising such a magnet, wherein the orientation of the joystick is determined with improved accuracy.

[0011] These and other objectives are achieved through embodiments of the present invention.

[0012] According to a first aspect, the present invention provides a sensor device for determining the orientation (e.g., α, β) of a magnet having an axis, the sensor device comprising: a silicon substrate including a plurality of magnetic sensors; and processing circuitry configured to: a) determine a first magnetic field gradient (e.g., dBx / dx; dBz / dx) along the first direction (e.g., X) of a first magnetic field component (e.g., Bx; Bz) oriented in a first direction (e.g., X) parallel to the silicon substrate or in a third direction (e.g., Z) perpendicular to the substrate; b) determine a magnetic field gradient (e.g., dBx / dx; dBz / dx) along the first direction (e.g., X) of a first magnetic field component (e.g., Bx; Bz) oriented in a third direction (e.g., Z) perpendicular to the silicon substrate; and c) determine a magnetic field gradient (e.g., dBx / dx) along the second direction (e.g., Y) perpendicular to the first direction (e.g., X). c) Determine a second magnetic field gradient (e.g., dBy / dy; dBz / dy) along the second direction (e.g., Y) for a second magnetic field component (e.g., By; Bz) oriented or oriented in a third direction (e.g., Z) perpendicular to the substrate; d) Determine a first angle (e.g., α) as a function of the first magnetic field gradient (e.g., dBx / dx; dBz / dx) and a first correction value (e.g., D1, D2, D3, D5, D7); d) Determine a second angle (e.g., β) as a function of the second magnetic field gradient (e.g., dBy / dy; dBz / dy) and a second correction value (e.g., D1, D2, D4, D6, D8).

[0013] Preferably, the first correction value is different from dBx / dx and different from dBz / dx, and the second correction value is different from dBy / dy and different from dBz / dy.

[0014] The orientation determined in this way was found to have improved accuracy and reduced sensitivity to one or more of the following: temperature changes, installation tolerances, external interference fields, magnet demagnetization, etc.

[0015] The first and second correction values ​​can be selected from a group consisting of the following: a predefined function of temperature, the sum of squares of the three orthogonal magnetic field components (Bx, By, Bz), the sum of squares of the three orthogonal magnetic field gradients (dBx / dx, dBy / dx, dBz / dx) along the first direction (X), the sum of squares of the three orthogonal magnetic field gradients (dBx / dy, dBy / dy, dBz / dy) along the second direction (Y), and the second-order gradient (d) of the first magnetic field component (Bx; Bz) along the first direction (X). 2 Bx / dx 2 ;d 2 Bz / dx 2 ), and the second gradient (d) of the second magnetic field component (By; Bz) along the second direction (Y). 2 By / dy 2 ;d 2 Bz / dy 2 ).

[0016] Please note that "a silicon substrate including multiple magnetic sensors" does not necessarily mean that the sensors are embedded in the silicon substrate, although they can be embedded in the silicon substrate, and it does not necessarily mean that the sensors must be made of silicon. In fact, the magnetic sensors can be formed on top of the silicon substrate and can include materials different from silicon (e.g., ferromagnetic materials (xMR) or semiconductor compounds (e.g., III-V compounds)).

[0017] The first correction value may be related to the magnetic field strength of the magnet (e.g., indicating the magnetic field strength of the magnet), and / or may be substantially independent of the orientation of the magnet.

[0018] The second correction value may be related to the magnetic field strength of the magnet (e.g., indicating the magnetic field strength of the magnet), and / or may be substantially independent of the orientation of the magnet.

[0019] Preferably, the silicon substrate has a thickness of less than 9.0 mm. 2 or less than 7.0mm 2 or less than 5.0mm 2 or less than 4.0mm 2 The area.

[0020] In one embodiment, the sensor device includes four sensor positions, for example, the four sensor positions are positioned on a virtual circle and spaced apart at multiples of 90° in angle.

[0021] In one embodiment, the sensor device includes five sensor positions, four of which are positioned on a virtual circle and spaced apart at multiples of 90° in angle, and a fifth sensor position located at the center of the virtual circle.

[0022] In an embodiment, the sensor device includes four 1D magnetic pixels, such as four horizontal Hall elements without a magnetic flux concentrator (e.g., as shown in the image). Figure 5A (As shown in the diagram).

[0023] In an embodiment, the sensor device includes four 3D magnetic pixels (e.g., such as...). Figure 8 and Figure 9 (As shown in the diagram).

[0024] In an embodiment, the sensor device includes five 1D magnetic pixels, such as five horizontal Hall elements without a magnetic flux concentrator (e.g., as shown in the image). Figure 11 (As shown in the diagram).

[0025] In an embodiment, the sensor device includes four 1D magnetic pixels positioned on a virtual circle and spaced apart at multiples of 90°, and a 2D magnetic pixel positioned at the center (e.g., as shown in the image). Figure 14 (As illustrated in the figure). The sensor device may include only a vertical Hall element, or only a magnetoresistive (MR) element, or both a vertical Hall element and an MR element.

[0026] In the embodiment, the first / second angle is determined as a function of the product of the first / second magnetic field gradient and the first / second correction value.

[0027] In an embodiment, the first / second angle is determined as a function of the ratio of the first / second magnetic field gradient to the first / second correction value.

[0028] In an embodiment, the first / second angle is determined as a function of the ratio of the first / second magnetic field gradient to the square root of the sum of squares.

[0029] In this embodiment, the function is an angle measurement function (e.g., arctangent function, arcsine function, or arccotangent function).

[0030] The magnet can be a cylindrical magnet.

[0031] The magnet can be a bipolar magnet (e.g., a cylindrical bipolar magnet, a bipolar bar magnet, or a bipolar spherical magnet).

[0032] The magnet can be an axially magnetized ring magnet or an axially magnetized disk magnet.

[0033] Cylindrical magnets may have an outer diameter ranging from 3.0 mm to 15.0 mm, or from 4.0 mm to 12.0 mm, or from 4.0 mm to 10.0 mm.

[0034] A cylindrical magnet may have a height H (in the axial direction) and an outer diameter D such that the ratio of the height to the outer diameter (H / D) is a value in the range of 20% to 100%, or in the range of 20% to 80%, or in the range of 25% to 75% (e.g., equal to about 50%).

[0035] In an embodiment, step a) includes: determining a first magnetic field gradient (e.g., dBz / dx) of a magnetic field component (e.g., Bz) oriented perpendicular to the silicon substrate along the first direction (e.g., X); and step b) includes: determining a second magnetic field gradient (e.g., dBz / dy) of the magnetic field component (e.g., Bz) oriented perpendicular to the substrate along the second direction (e.g., Y); and the first correction value and the second correction value (e.g., D1, D2, D3, D4) are selected from the group consisting of: a predefined function of temperature, the sum of squares of the three magnetic field components (e.g., Bx, By, Bz), the sum of squares of the three magnetic field gradients (e.g., dBx / dx, dBy / dx, dBz / dx) along the first direction (e.g., X), and the sum of squares of the three magnetic field gradients (e.g., dBx / dy, dBy / dy, dBz / dy) along the second direction (e.g., Y).

[0036] In this embodiment, the first and second correction values ​​are highly independent of the orientation of the magnet and depend primarily on the strength of the magnet.

[0037] In an embodiment, the sensor device is further configured to measure temperature; and step c) includes: determining a first angle (e.g., α) as a function of a predefined function of the first magnetic field gradient (e.g., dBz / dx) and temperature; and step d) includes: determining a second angle (e.g., β) as a function of a predefined function of the second magnetic field gradient (e.g., dBz / dy) and temperature.

[0038] Figure 5A An example of this embodiment is illustrated in the figure.

[0039] The temperature can be obtained from an internal temperature sensor contained in the sensor device (e.g., embedded in a silicon substrate), or it can be obtained from an external temperature sensor (e.g., mounted to or near a magnet and electrically connected to the sensor device).

[0040] Predefined functions can be stored in the non-volatile memory of the sensor device (e.g., in the form of a lookup table, or in the form of a set of coefficients of a polynomial expression, or in any other suitable manner).

[0041] The advantages of this sensor device are its high accuracy in angular positioning and its reduced sensitivity to temperature changes and external interference fields.

[0042] In an embodiment, the sensor device is further configured to measure three orthogonal magnetic field components (e.g., Bx, By, Bz) and to determine the sum of squares of these magnetic field components; and step c) includes determining a first angle (e.g., α) as a function of the first magnetic field gradient (e.g., dBz / dx) and the sum of squares; and step d) includes determining a second angle (e.g., β) as a function of the second magnetic field gradient (e.g., dBz / dy) and the sum of squares.

[0043] exist Figure 6 and Figure 7 The figure in the middle shows an example of this embodiment.

[0044] The advantages of this sensor device are its high accuracy in angular position and its reduced sensitivity to temperature changes, magnet demagnetization, installation tolerances, and external interference fields.

[0045] The sensor device is further configured to determine three orthogonal magnetic field gradients (e.g., dBx / dx, dBy / dx, dBz / dx) along a first direction (e.g., X) and to determine a first sum of squares of these gradients; and the sensor device is further configured to determine three orthogonal magnetic field gradients (e.g., dBx / dy, dBy / dy, dBz / dy) along a second direction (e.g., Y) and to determine a second sum of squares of these gradients; and step c) includes determining a first angle (e.g., α) as a function of the first magnetic field gradient (e.g., dBz / dx) and the first sum of squares; and step d) includes determining a second angle (e.g., β) as a function of the second magnetic field gradient (e.g., dBz / dy) and the second sum of squares.

[0046] exist Figures 8 to 10 The figure in the middle shows an example of this embodiment.

[0047] Surprisingly, it was found that the first sum of squares is height-constant with respect to the angular positions of the first angle in the XZ plane, and the second sum of squares is substantially constant with respect to the angular positions of the second angle in the YZ plane, such as... Figure 10 As illustrated in the figure. To the best of the inventor's knowledge, this is unknown in the art.

[0048] In an embodiment, the sensor device is further configured to determine the second-order gradient (e.g., d) of the first magnetic field component (e.g., Bx; Bz) along a first direction (e.g., X). 2 Bx / dx 2 ;d 2 Bz / dx 2), and used to determine the second gradient (e.g., d) of the second magnetic field component (e.g., By; Bz) along the second direction (e.g., Y). 2 By / dy 2 ;d 2 Bz / dy 2 Step c) includes: determining the first angle (e.g., α) as the first magnetic field gradient (e.g., dBx / dx; dBz / dx) and the second-order gradient (e.g., d...) along a first direction (e.g., X) of the first magnetic field component (e.g., Bx; Bz). 2 Bx / dx 2 ;d 2 Bz / dx 2 The function of ); and step d) includes: determining the second angle (e.g., β) as the second magnetic field gradient (e.g., dBy / dy; dBz / dy) of the second magnetic field component (e.g., By; Bz) along the second direction (e.g., Y) and the second-order gradient (e.g., d 2 By / dy 2 ;d 2 Bz / dy 2 The function of ).

[0049] exist Figures 11 to 14 The figure in the middle shows an example of this embodiment.

[0050] The advantages of this sensor device are its high accuracy in angular position and its reduced sensitivity to temperature changes, magnet demagnetization, installation tolerances, and external interference fields.

[0051] In an embodiment, step a) includes: determining a first magnetic field gradient (e.g., dBx / dx) of a first magnetic field component (e.g., Bx) oriented in a first direction (e.g., X) parallel to the silicon substrate; and step b) includes: determining a second magnetic field gradient (e.g., dBy / dy) of a second magnetic field component (e.g., By) oriented in a second direction (e.g., Y) parallel to the silicon substrate and perpendicular to the first direction (e.g., X); and step c) includes: determining a first angle (e.g., α) as the first magnetic field gradient (e.g., dBx / dx) of the first magnetic field component (e.g., Bx) along the first direction (e.g., X) and the second magnetic field gradient (e.g., d... 2 Bx / dx 2 The function of ); and step d) includes: determining the second angle (e.g., β) as the second magnetic field gradient (e.g., dBy / dy) of the second magnetic field component (e.g., By) along the second direction (e.g., Y) and the second-order gradient (e.g., d 2 By / dy 2 The function of ).

[0052] Figure 14 The figure in the middle shows an example of this embodiment.

[0053] In an embodiment, step a) includes: determining a first magnetic field gradient (e.g., dBz / dx) of a first magnetic field component (e.g., Bz) oriented perpendicular to the silicon substrate along a first direction (e.g., X); and step b) includes: determining a second magnetic field gradient (e.g., dBz / dy) of the first magnetic field component (e.g., Bz) oriented perpendicular to the silicon substrate along a second direction (e.g., Y) perpendicular to the first direction; and step c) includes: determining a first angle (e.g., α) as the first magnetic field gradient (e.g., dBz / dx) of the first magnetic field component (e.g., Bz) along a first direction (e.g., X) and the second magnetic field gradient (e.g., d... 2 Bz / dx 2 The function of ); and step d) includes: determining the second angle (e.g., β) as the second magnetic field gradient (e.g., dBz / dy) of the first magnetic field component (e.g., Bz) along the second direction (e.g., Y) and the second-order gradient (e.g., d 2 Bz / dy 2 The function of ).

[0054] exist Figures 11 to 13 The figure in the middle shows an example of this embodiment.

[0055] According to a second aspect, the present invention also provides a position sensor system comprising: a sensor device according to the first aspect, the sensor device comprising: the silicon substrate; and a magnet pivotable about a reference point (e.g., P-reference (Pref)) having a predefined position relative to the silicon substrate.

[0056] In one embodiment, the system further includes a joystick connected to a magnet.

[0057] According to a third aspect, the present invention also provides a method for determining the orientation (α, β) of a magnet pivotable about a reference point (e.g., Pref) having a predefined position relative to a silicon substrate, the method comprising: a) providing a silicon substrate including a plurality of magnetic sensors, and measuring a plurality of magnetic field components at the plurality of sensor positions; b) determining a first magnetic field gradient (e.g., dBx / dx; dBz / dx) along the first direction (e.g., X) for a first magnetic field component (e.g., Bx; Bz) oriented in a first direction (e.g., X) parallel to the silicon substrate or in a third direction (e.g., Z) perpendicular to the substrate; c) determining a second magnetic field gradient (e.g., By; Bz) along the first direction (e.g., X) for a second magnetic field component (e.g., By; Bz) oriented in a second direction (e.g., Y) parallel to the silicon substrate and perpendicular to the first direction (e.g., X) or in a third direction (e.g., Z) perpendicular to the first direction (e.g., X); The second magnetic field gradient (e.g., dBy / dy; dBz / dy) in the second direction (e.g., Y); d) determining the first angle (e.g., α) formed between the orthogonal projection of the magnet's axis onto a first virtual plane (e.g., XZ) parallel to the first direction (e.g., X) and a third direction (e.g., Z) as a function of the first magnetic field gradient (e.g., dBx / dx or dBz / dx) and a first correction value (e.g., D1, D2, D3, D5); e) determining the second angle (e.g., β) formed between the orthogonal projection of the magnet's axis onto a second virtual plane (e.g., YZ) parallel to the second direction (e.g., Y) and a third direction (e.g., Z) as a function of the second magnetic field gradient (e.g., dBy / dy or dBz / dy) and a second correction value (e.g., D1, D2, D4, D6).

[0058] The first and second correction values ​​can be selected from a group consisting of the following: a predefined function of temperature, the sum of squares of the three orthogonal magnetic field components (Bx, By, Bz), the sum of squares of the three orthogonal magnetic field gradients (dBx / dx, dBy / dx, dBz / dx) along the first direction (X), the sum of squares of the three orthogonal magnetic field gradients (dBx / dy, dBy / dy, dBz / dy) along the second direction (Y), and the second-order gradient (dBx / dy, dBy / dy, dBz / dy) of the first magnetic field component (Bx; Bz) along the first direction (X). 2 Bx / dx 2 ;d 2 Bz / dx 2 ), and the second gradient (d) of the second magnetic field component (By; Bz) along the second direction (Y). 2 By / dy 2 ;d 2 Bz / dy 2 ).

[0059] The first correction value may be related to the magnetic field strength of the magnet (e.g., indicating the magnetic field strength of the magnet), and / or may be substantially independent of the orientation of the magnet.

[0060] The second correction value may be related to the magnetic field strength of the magnet (e.g., indicating the magnetic field strength of the magnet), and / or may be substantially independent of the orientation of the magnet.

[0061] In an embodiment, step b) includes: determining a first magnetic field gradient (e.g., dBz / dx) of a magnetic field component (e.g., Bz) oriented in a direction perpendicular to the substrate (e.g., Z) along a first direction (e.g., X); step c) includes: determining a second magnetic field gradient (e.g., dBz / dy) of the magnetic field component (e.g., Bz) oriented in a direction perpendicular to the substrate (e.g., Z) along a second direction (e.g., Y); step d) includes: determining the first angle (e.g., α) as a function of the first magnetic field gradient (e.g., dBz / dx) and the first correction value (e.g., D1, D2, D3); step e) includes: determining the second angle (e.g., β) as a function of the second magnetic field gradient (e.g., dBz / dy) and the second correction value (e.g., D1, D2, D4).

[0062] The first and second correction values ​​can be selected from a group consisting of the following: a predefined function of temperature, the sum of squares of the three orthogonal magnetic field components (Bx, By, Bz), the sum of squares of the three orthogonal magnetic field gradients (dBx / dx, dBy / dx, dBz / dx) along the first direction (X), and the sum of squares of the three orthogonal magnetic field gradients (dBx / dy, dBy / dy, dBz / dy) along the second direction (Y).

[0063] In an embodiment, the method further includes: determining the second-order gradient (e.g., d) of the first magnetic field component (e.g., Bx; Bz) along a first direction (e.g., X). 2 Bx / dx 2 ;d 2 Bz / dx 2 The method further includes: determining the second gradient (e.g., d) of the second magnetic field component (e.g., By; Bz) along a second direction (e.g., Y). 2 By / dy 2 ;d 2 Bz / dy 2 Step d) includes: determining the first angle (e.g., α) as the first magnetic field gradient (e.g., dBx / dx; dBz / dx) and the second-order gradient (e.g., d...) along a first direction (e.g., X) of the first magnetic field component (e.g., Bx; Bz). 2 Bx / dx 2 ;d2 Bz / dx 2 The function of ); and step e) includes: determining the second angle (e.g., β) as the second magnetic field gradient (e.g., dBy / dy; dBz / dy) along the second direction (e.g., Y) of the second magnetic field component (e.g., By; Bz) and the second-order gradient (e.g., d 2 By / dy 2 ;d 2 Bz / dy 2 The function of ).

[0064] In an embodiment, step b) includes: determining a first magnetic field gradient (e.g., dBx / dx) of a first magnetic field component (e.g., Bx) oriented in a first direction (X) parallel to the silicon substrate along the first direction (e.g., X); and step c) includes: determining a second magnetic field gradient (e.g., dBy / dy) of a second magnetic field component (e.g., By) oriented in a second direction (e.g., Y) parallel to the silicon substrate and perpendicular to the first direction (e.g., X); and step d) includes: determining a first angle (e.g., α) as the first magnetic field gradient (e.g., dBx / dx) of the first magnetic field component (e.g., Bx) along the first direction (e.g., X) and the second magnetic field gradient (e.g., d... 2 Bx / dx 2 The function of ); and step e) includes: determining the second angle (e.g., β) as the second magnetic field gradient (e.g., dBy / dy) of the second magnetic field component (e.g., By) along the second direction (e.g., Y) and the second-order gradient (e.g., d 2 By / dy 2 The function of ).

[0065] In an embodiment, step b) includes: determining a first magnetic field gradient (e.g., dBz / dx) of a first magnetic field component (e.g., Bz) oriented perpendicular to the silicon substrate along the first direction (e.g., X); and step c) includes: determining a second magnetic field gradient (e.g., dBz / dy) of the first magnetic field component (e.g., Bz) oriented perpendicular to the silicon substrate along a second direction (e.g., Y) perpendicular to the first direction; and step d) includes: determining a first angle (e.g., α) as the first magnetic field gradient (e.g., dBz / dx) of the first magnetic field component (e.g., Bz) along the first direction (e.g., X) and the second magnetic field gradient (e.g., d... 2 Bz / dx 2 The function of ); and step e) includes: determining the second angle (e.g., β) as the second magnetic field gradient (e.g., dBz / dy) of the first magnetic field component (e.g., Bz) along the second direction (e.g., Y) and the second-order gradient (e.g., d 2Bz / dy 2 The function of ).

[0066] Specific and preferred aspects of the invention are set forth in the appended independent and dependent claims. Features from the dependent claims may be suitably combined with features of the independent claims and other dependent claims, and not merely as expressly set forth in the claims.

[0067] These and other aspects of the invention will be apparent from the following description of one or more embodiments, and are illustrated by reference to the following description of one or more embodiments. Attached Figure Description

[0068] Figure 1 It is a schematic representation of a magnetic position sensor system comprising an axially magnetized magnet that can move relative to a sensor device having at least two degrees of freedom.

[0069] Figure 2 This shows how the random orientation of a line segment [CP] can be represented by two angles α and β.

[0070] Figure 3A This is a schematic block diagram of a sensor structure that can be used in embodiments of the present invention. The sensor structure includes a disk-shaped integrated magnetic concentrator (IMC) and four horizontal Hall elements located on the periphery of the disk and spaced apart at multiples of 90°. This sensor structure is capable of measuring three orthogonal magnetic field components and is also referred to as a "3D magnetic pixel".

[0071] Figure 3B This is a schematic block diagram of another sensor structure that can be used in embodiments of the present invention. The sensor structure includes a horizontal Hall element and four vertical Hall elements arranged near the periphery of the horizontal Hall element. This sensor structure is capable of measuring three orthogonal magnetic field components and is therefore also referred to as a "3D magnetic pixel".

[0072] Figures 4(a) to 4(d) It is a schematic representation of a cylindrical magnet having an axis that intersects the semiconductor substrate at a predefined reference position.

[0073] In Figures 4(a) and 4(b), the sensor or sensor structure is located at the reference position. It can be seen that the magnetic field lines passing through the sensor position have the same orientation as the mechanical angle of the axis, and the distance between the sensor and the magnet is independent of the orientation of the axis.

[0074] In Figures 4(c) and 4(d), the semiconductor substrate contains multiple sensors or sensor structures located at sensor positions spaced apart from the reference position. It can be seen that the orientation of the magnetic field lines at the multiple sensor positions differs from the orientation of the axis, and the distance between each sensor position and the magnet is not constant but depends on the orientation of the axis.

[0075] Figure 5A This can be achieved in embodiments of the present invention (e.g., in...). Figure 1 A schematic representation of the sensor arrangement used in the sensor device, and a set of formulas for determining the orientation of the magnet using a correction value D1 as a predefined function of temperature.

[0076] Figure 5B It is a graph that illustrates how the magnetic field gradient dBzdx varies as a function of angular offset and as a function of temperature.

[0077] Figure 5C Illustrative examples of temperature-related correction factors that can be used in embodiments of the present invention are shown.

[0078] Figure 6 and Figure 7 This illustrates embodiments that can be implemented in the present invention (e.g., in...). Figure 1 A schematic representation of another sensor arrangement used in the sensor device, and a set of formulas for determining the orientation of a magnet using a correction value D2 as the sum of the squares of the three orthogonal magnetic field components.

[0079] Figure 8 and Figure 10 This illustrates embodiments that can be implemented in the present invention (e.g., in...). Figure 1 A schematic representation of another sensor arrangement used in the sensor device, and a set of formulas for determining the orientation of the magnet using correction values ​​D3 and D4 as the sum of squares of three orthogonal magnetic field gradients.

[0080] Figure 9 These sums of squares, expressed in arbitrary units, are shown as a function of angular displacement.

[0081] Figure 11 This illustrates embodiments that can be implemented in the present invention (e.g., in...). Figure 1 A schematic representation of another sensor arrangement used in the sensor device, and a set of formulas for determining the orientation of the magnet using correction values ​​D5 and D6 as second-order gradients.

[0082] Figure 12 An example is shown with graphs of the first and second gradients as a function of angular displacement, as can be seen by... Figure 11 The sensor arrangement was obtained.

[0083] Figure 13 It shows having Figure 12 A graph showing the ratio of the first-order gradient to the second-order gradient as a function of angular displacement.

[0084] Figure 14 This illustrates embodiments that can be implemented in the present invention (e.g., in...). Figure 1 A schematic representation of another sensor arrangement used in the sensor device, and a set of formulas for determining the orientation of the magnet using correction values ​​D5 and D6 as second-order gradients.

[0085] Figure 15 An electrical block diagram of a circuit that can be used in the position sensor device proposed by the present invention is shown.

[0086] Figure 16 and Figure 17 It shows Figure 1 A specific example of a sensor system.

[0087] Figure 18 It shows Figure 1 A variant of the sensor system in which a magnet can pivot about a reference point located at a predefined non-zero distance “dref” above the substrate.

[0088] Figure 19 A flowchart is shown of a method proposed in this invention for determining two angles α and β corresponding to the orientation of the axis of a magnet.

[0089] Figure 20 A flowchart of such a method is shown, in which two angles are determined as a function of the out-of-plane magnetic field gradient and a correction value indicating the magnetic field strength of the magnet.

[0090] Figure 21 A flowchart of such a method is shown, in which the two angles are determined as functions of the first-order gradient and the second-order gradient.

[0091] The accompanying drawings are merely illustrative and not restrictive. In the drawings, some elements may be enlarged and not drawn to scale for illustrative purposes. No reference numerals in the claims should be construed as limiting the scope. In different drawings, the same reference numerals refer to the same or similar elements. Detailed Implementation

[0092] The invention will be described with reference to specific embodiments and particular drawings, but the invention is not limited thereto but is defined only by the claims.

[0093] The terms "first," "second," etc., used in the specification and claims are used to distinguish between similar elements and are not necessarily used to describe a temporal, spatial, hierarchical, or any other order. It should be understood that the terms thus used are interchangeable where appropriate, and the embodiments of the invention described herein can operate in an order different from that described or illustrated herein.

[0094] The terms top, bottom, etc., used in the specification and claims are for descriptive purposes and are not necessarily used to describe relative positions. It should be understood that the terms used so are interchangeable where appropriate, and the embodiments of the invention described herein can operate in orientations different from those described or illustrated herein.

[0095] It should be noted that the term "comprising" as used in the claims should not be construed as limiting itself to the means listed thereafter; it does not exclude other elements or steps. Therefore, the term should be interpreted as specifying the presence of the features, integers, steps, or components stated as mentioned, but does not exclude the presence or addition of one or more other features, integers, steps, or components, or groups thereof. Thus, the scope of the statement "a device comprising means A and B" should not be limited to a device consisting solely of components A and B. It means that, for the purposes of this invention, the only relevant components of the device are A and B.

[0096] Throughout this specification, the reference to "an embodiment" or "an embodiment" means that a particular feature, structure, or characteristic described in connection with that embodiment is included in at least one embodiment of the invention. Therefore, the phrase "in one embodiment" or "in an embodiment" appearing in various places throughout this specification does not necessarily refer to the same embodiment, but may refer to different embodiments. Furthermore, in one or more embodiments, as will be apparent to those skilled in the art from this disclosure, particular features, structures, or characteristics may be combined in any suitable manner.

[0097] Similarly, it should be understood that in the description of exemplary embodiments of the invention, various features of the invention are sometimes grouped together in a single embodiment, drawing, or description for the purpose of streamlining the disclosure and aiding in the understanding of one or more of the various inventive aspects. However, this method of disclosure should not be construed as reflecting an intention to claim more features than are expressly recited in each claim. Rather, as reflected in the appended claims, the inventive aspect lies in fewer features than all the features of a single foregoing disclosed embodiment. Thus, the claims appended to the Detailed Description are thereby expressly incorporated into this Detailed Description, wherein each claim itself represents a separate embodiment of the invention.

[0098] Furthermore, while some embodiments described herein include features found in other embodiments but not in those other embodiments, combinations of features from different embodiments are intended to fall within the scope of the invention and form different embodiments as will be understood by those skilled in the art. For example, any embodiment of the claimed embodiments in the appended claims may be used in any combination.

[0099] Numerous specific details are set forth in the specification provided herein. However, it should be understood that embodiments of the invention may be practiced without these specific details. In other instances, well-known methods, structures, and techniques have not been shown in detail so as not to obscure the understanding of this specification.

[0100] In this document, unless otherwise expressly stated, the terms "magnetic sensor device" or "sensor device" refer to a device preferably integrated in a semiconductor substrate that includes at least one "magnetic sensor" or at least one magnetic "sensor element". Sensor devices may be included in a package, also referred to as a "chip," although that is not strictly necessary.

[0101] In this document, the terms “sensor element” or “magnetic sensor element” or “magnetic sensor” may refer to a component or group of components or subcircuit or structure capable of measuring magnetic quantities, such as, for example, a magnetoresistive element, a GMR element, an XMR element, a horizontal Hall plate, a vertical Hall plate, a Wheatstone bridge containing at least one (but preferably four) magnetoresistive elements, or combinations thereof.

[0102] In embodiments of the invention, the term "magnetic sensor" or "magnetic sensor structure" may refer to an arrangement including one or more integrated magnetic concentrators (IMCs) (also known as integrated flux concentrators) and one or more horizontal Hall elements (e.g., a disk-shaped IMC having four horizontal Hall elements spaced apart at multiples of 90° in angle) arranged near the periphery of the IMC.

[0103] In this document, the terms "in-plane components of the magnetic field vector" and "projection of the magnetic field vector onto the sensor plane" have the same meaning. If the sensor device is on or includes a semiconductor substrate, this also means "magnetic field components parallel to the semiconductor plane." These components can be denoted as Bx, By, etc.

[0104] In this document, the terms "out-of-plane component of the magnetic field vector," "Z component of the vector," and "projection of the vector onto an axis perpendicular to the sensor plane" have the same meaning. This component can be denoted as Bz.

[0105] Embodiments of the present invention are typically described using an orthogonal coordinate system fixed to a sensor device and having three axes X, Y, and Z, wherein the X and Y axes are parallel to the substrate and the Z axis is perpendicular to the substrate.

[0106] In this document, the terms "spatial derivative," "derivative," "spatial gradient," or "gradient" are used as synonyms. Unless explicitly stated otherwise, the order of the derivative is assumed to be a first-order gradient, unless clearly understood from the context. In the context of this invention, the gradient is typically defined as the difference between two values ​​measured at two locations spaced apart along a certain direction. Theoretically, the gradient is calculated as the difference between the two values ​​divided by the distance between the sensor locations; however, in practice, this division by the distance is often omitted because the measured signal needs to be scaled anyway. Therefore, in the context of this invention, the terms "magnetic field difference" and "magnetic field gradient" can be used interchangeably.

[0107] In this application, the horizontal Hall plate is typically referred to as H1, H2, etc., and the signal obtained from the horizontal Hall plate is typically referred to as h1, h2, etc.; the vertical Hall plate is typically referred to as V1, V2, etc., and the signal from the vertical Hall plate is typically referred to as v1, v2, etc.

[0108] In the context of this invention, the formulas arctan(x / y), atan2(x,y), and arccot(y / x) are considered equivalent.

[0109] This invention relates to a magnetic position sensor system, method, and device for measuring the orientation of a magnet pivotable about a fixed reference point "Pref". The fixed reference point may be positioned on a semiconductor substrate, or at a predefined distance "dref" above or below the semiconductor substrate. The magnet may be connected to a joystick (not shown).

[0110] In a preferred embodiment, the system has one or more or all of the following characteristics: improved accuracy, reduced sensitivity to temperature changes, reduced sensitivity to installation tolerances, reduced sensitivity to demagnetization of magnets, reduced sensitivity to external interference fields, and preferably all of these.

[0111] Please refer to the attached diagram.

[0112] Figure 1 This is a schematic diagram of a magnetic position sensor system 100 including a cylindrical magnet 101 and a sensor device 102.

[0113] Sensor device 102 includes a semiconductor substrate ( Figure 1(Not shown in the image). A coordinate system with three orthogonal axes X, Y, and Z is connected to the semiconductor substrate such that the X and Y axes are parallel to the semiconductor substrate and the Z axis is orthogonal to the semiconductor substrate.

[0114] Figure 1 The magnet 101 shown is a cylindrical magnet, more specifically an axially magnetized bipolar magnet 101. The magnet has a virtual axis "A" that intersects the semiconductor substrate at a fixed reference point "Pref" and can rotate in various directions. The distance between the magnet 101 and the reference point "Pref" is constant, thus the system has two degrees of freedom. The task of the sensor device 102 is to determine the orientation of the magnet 101.

[0115] For example, orientation can be achieved through two angles. Let ψ be uniquely defined, where ψ is the negative or positive angle relative to the Z-axis of the orthogonal projection of axis A into the YZ plane, and ψ is the negative or positive angle relative to the Z-axis of the orthogonal projection of axis A into the XZ plane. In the example shown, if the axis A of the magnet is oriented perpendicular to the semiconductor substrate, then the magnetic field vector B at the intersection of axis A and the semiconductor substrate is oriented in the negative Z direction. And ψ = 0°. The magnet is preferably available in a range of at least -30° to +30°. Neutralizes the range ψ from -30° to +30°, but of course, a larger range can be envisioned (e.g., ±40°, or ±50°, or ±60°). However, by angle... Using ψ to specify the orientation of magnet 101 is not the only possible way.

[0116] Figure 2 Another way of defining the orientation of a vector [CP] of constant length, starting from reference point “C” and ending at point “P” on an imaginary sphere, is shown. The vector [CP] is not shown, but a first orthogonal projection [CA] of the vector [CP] onto the plane XZ is shown, and a second orthogonal projection [CB] of the vector [CP] onto the plane YZ is shown. The orientation of axis A, passing through points C and P, can also be defined by a first angle α between the positive X-axis and vector [CA] and a second angle β between the positive Y-axis and vector [CB]. As an example, if the magnet axis is oriented perpendicular to the plane XY (i.e., perpendicular to the semiconductor substrate) (also called the “neutral position”), then α = 90° and β = 90°. This is consistent with what has been described above. And the orientation of ψ = 0° corresponds to this.

[0117] The following formulas apply:

[0118] Bx=B*cos(α)*sin(β)[1]

[0119] By=B*cos(β)*sin(α)[2]

[0120] Bz=B*sin(β)*sin(α)[3]

[0121] The division of [3] and [1] yields:

[0122] (Bz / Bx)=tan(α)[4]

[0123] (Bz / By)=tan(β)[5]

[0124] Where Bx is the magnetic field component oriented in the X direction, By is the magnetic field component oriented in the Y direction, Bz is the magnetic field component oriented in the Z direction, and B is the magnitude of the magnetic field vector. Therefore, by measuring Bx, By, and Bz at the reference point Pref, angles α and β can be calculated. However, this solution is highly sensitive to external influences and / or aging effects (e.g., highly sensitive to temperature changes, installation tolerances, magnet demagnetization, external interference fields, etc.).

[0125] In a preferred embodiment, angles α and β are values ​​in the range of 90°±30°, or in the range of 90°±40°, or in the range of 90°±50°, or in the range of 90°±60°.

[0126] Figure 3A This is a schematic block diagram of a sensor structure 300 that can be used in embodiments of the present invention. The sensor structure includes a disk-shaped integrated magnetic concentrator (IMC) and four horizontal Hall elements H1 to H4 located on the periphery of the disk and spaced apart at multiples of 90°. This sensor structure is capable of measuring three orthogonal magnetic field components at the center of the IMC disk and is also referred to as a "3D magnetic pixel". Formulas are provided to calculate the three orthogonal magnetic field components Bx, By, and Bz based on sensor signals h1, h2, h3, and h4 provided by the horizontal Hall elements H1, H2, H3, and H4, respectively. Note that the signals obtained from the Hall elements are actually amplified or scaled in a known manner, but the scaling factor is omitted here to keep the explanation simple.

[0127] IMCs can have a disc shape with a diameter ranging from 150 μm to 250 μm (e.g., from 170 μm to 230 μm), for example, equal to about 200 μm.

[0128] Figure 3BThis is a schematic block diagram of another sensor structure 310 that can be used in embodiments of the present invention. This sensor structure includes a horizontal Hall element H1 and four vertical Hall elements V1 to V4 arranged near the periphery of the horizontal Hall element. This sensor structure is also capable of measuring three orthogonal magnetic field components Bx, By, and Bz at the center of H1, and is therefore also referred to as a "3D magnetic pixel". Formulas are provided to calculate the three orthogonal magnetic field components Bx, By, and Bz based on sensor signals h1, v1, v2, v3, and v4 provided by the horizontal Hall element H1 and the vertical Hall elements V1, V2, V3, and V4, respectively. Note that the signals obtained from the Hall elements are actually amplified or scaled in a known manner, but the scaling factor is omitted here to keep the explanation simple.

[0129] Please note that it is not absolutely required to use four vertical Hall elements to measure Bx and By, but more accurate results can be obtained by summing or averaging the signals (v1 and v3) to calculate Bx, and by summing or averaging the signals (v2 and v4) to calculate By.

[0130] Figures 4(a) to 4(d) It is a schematic representation of a cylindrical magnet 401 having an axis A that intersects the semiconductor substrates 403a and 403b at a predefined reference position Pref.

[0131] In Figures 4(a) and 4(b), the sensor or sensor structure (schematically indicated by squares) is located at the reference position. It can be seen that the magnetic field lines passing through the sensor position have the same orientation as the mechanical angle of axis A, and the distance between the sensor and the magnet is independent of the orientation of the axis.

[0132] In Figures 4(c) and 4(d), the semiconductor substrate 403b contains multiple sensors or sensor structures located at sensor positions S1 and S2 spaced apart from the reference position Pref (schematically indicated by two squares). It can be seen that the orientation of the magnetic field lines at the multiple sensor positions differs from the orientation of axis A, and the distance between each sensor position and the magnet is not constant but depends on the orientation of the axis.

[0133] Figure 5A This can be achieved in embodiments of the present invention (e.g., in...). Figure 1 This is a schematic representation of the sensor arrangement used in sensor device 102. This sensor arrangement can be implemented on a semiconductor substrate 503 (e.g., a silicon substrate).

[0134] The sensor device includes four magnetic sensors S1 to S4 arranged on a virtual circle and spaced apart at multiples of 90°. Each sensor is capable of measuring a magnetic field component Bz oriented in a direction Z perpendicular to the semiconductor substrate 503. Sensor S1 may include a horizontal Hall element H1 capable of measuring Bz1 at a first sensor location; the second sensor S2 may include a horizontal Hall element H2 capable of measuring Bz2 at a second sensor location; the third sensor S3 may include a horizontal Hall element H3 capable of measuring Bz3; and the fourth sensor S4 may include a horizontal Hall element H4 capable of measuring Bz4.

[0135] Sensors S1 and S3 are positioned relative to each other on a virtual circle and spaced apart by a distance Δx along a first direction X. The magnetic field difference ΔBz13 can be calculated as the difference between Bz1 and Bz3. The magnetic field gradient dBz / dx can be calculated as ΔBz13 / Δx, but division by Δx is generally omitted because the sensor signals need to be scaled anyway, and the distance Δx can be taken into account in the scaling factor, as is known in the art. For this reason, in this document, the magnetic field difference ΔBz13 and the magnetic field gradient dBz / dx, along with the symbol dBzdx, are considered equivalent symbols. The latter symbol is preferred because it indicates the direction (z) along which the magnetic field components are oriented, and it indicates the direction (x) along which the difference or gradient is determined, and avoiding the effect of division by Δx is necessary.

[0136] Similarly, sensors S2 and S4 are positioned on the Y-axis perpendicular to the X-axis and spaced apart by a predefined distance Δy. The magnetic field gradient dBz / dy can be calculated as the difference between Bz2 and Bz4, but this value can also be written as ΔBz2 / 4 or dBzdy.

[0137] Orientation of the magnet (not in) Figure 5A As shown in the figure, but see, for example Figure 1 or Figures 16 to 18 This can be determined by the first angle α and the second angle β. Figure 5A In the embodiments described above.

[0138] The first angle α is calculated as f11, a function of the magnetic field gradient dBzdx and the first correction value D1, for example, as f13, a function of the ratio of the magnetic field gradient dBzdx to the first correction value D1, for example, as the arctangent function of the ratio, and optionally subsequently subjected to nonlinear correction. For example, this can be achieved using a lookup table that optionally utilizes linear interpolation;

[0139] Furthermore, the second angle β is calculated as f12, a function of the magnetic field gradient dBzdy and the correction value D1, for example, as f14, a function of the ratio of the magnetic field gradient dBzdy to the first correction value D1, for example, as the arctangent function of the ratio, optionally followed by nonlinear correction. This can be achieved, for example, using a lookup table that optionally utilizes linear interpolation;

[0140] The correction value D1 is a function f10 of the magnet’s temperature (or an estimate of that temperature), which is chosen such that f10(temperature(Temp)) indicates the magnet’s magnetic field strength, but is essentially independent of temperature.

[0141] The temperature of the magnet can be measured using a temperature sensor (e.g., a thermocouple, a thermistor, or a temperature-dependent resistor) mounted to the magnet and electrically connected to the sensor device, or it can be estimated using a temperature sensor “T” included in the sensor device 503 (e.g., embedded in a semiconductor substrate).

[0142] Figure 5B This is a graph illustrating an illustrative example of how the magnetic field gradient dBz / dx typically varies as a function of angle α and as a function of the temperature of the magnet.

[0143] The function dBzdx(α, T) can be written as the product of a constant (indicating the field strength of a particular magnet) and a first function dBzdx(angle) that depends only on the angle and a second function dBzdx(T) that depends only on the temperature, or approximated by the product of a constant (indicating the field strength of a particular magnet) and a first function dBzdx(angle) that depends only on the angle and a second function dBzdx(T) that depends only on the temperature. Although not explicitly shown, the magnetic field gradient dBz / dy will vary in a similar manner as a function of angle β and temperature.

[0144] Figure 5C This is a graph illustrating an illustrative example of such a second function (referred to herein as f10(T)). This function shows how the magnetic field strength of a magnet changes with temperature. This function depends on the material of the magnet. Values ​​at a predefined temperature (e.g., 25°C) can be considered as reference values. The function f10(T) can be determined during design or measured during calibration testing and can be stored in the non-volatile memory of the sensor device in any suitable form (e.g., as a lookup table, as a set of parameters for a parameterized curve, or as a set of coefficients for a polynomial expression) during production or during calibration testing. The same correction function f10(T) can be used when calculating the angle β.

[0145] Including, for example Figure 1 The movably mounted magnet 101 shown includes a magnet having, as shown in the figure, a magnet 101.Figure 5A The sensor device 102 with the sensor structure shown is used as follows: Figure 5A The sensor system 100 described in the formula is able to determine the orientation of the magnet 101 in a highly accurate manner, particularly in a manner that is highly insensitive to external disturbance fields and highly insensitive to temperature changes.

[0146] Figure 6 This can be achieved in embodiments of the present invention (e.g., in...). Figure 1 This is a schematic representation of the sensor arrangement used in sensor device 102. This sensor arrangement can be implemented on a semiconductor substrate 603 (e.g., a silicon substrate).

[0147] Figure 6 The sensor arrangement can be regarded as Figure 5A A variant of the sensor arrangement, in which a fifth sensor S5 is added, located at the center of a virtual circle. The fifth sensor S5 is a 3D magnetic pixel and is capable of measuring three orthogonal magnetic field components Bx5, By5, and Bz5. Figure 6 In the example, the fifth sensor S5 includes a horizontal Hall element H5 and two vertical Hall elements V1, V3 and two vertical Hall elements V2, V4. The two vertical Hall elements V1, V3 have a maximum sensitivity axis oriented in the X direction, and the two vertical Hall elements V2, V4 have a maximum sensitivity axis oriented in the Y direction.

[0148] exist Figure 6 In this embodiment, the correction factor D2 is calculated as the sum of the squares of the values ​​Bx5, By5, and Bz5 according to the formula D2 = sqr(Bx5) + sqr(By5) + sqr(Bz5). The value of D2 indicates the strength of the magnetic field of the magnet. For magnets installed in... Figure 1 For a given magnet in the sensor system shown, the value of D2 is related to... Figure 5C The same way as shown changes with temperature, but in Figure 6 In the embodiment shown, the magnetic field strength D2 or a value derived therefrom (e.g., the square root of D2) is used as a correction factor.

[0149] The first magnetic field difference or magnetic field gradient dBzdx can be determined using the signal h1 obtained from the first sensor S1 and the signal h3 obtained from the third sensor S3. The second magnetic field difference or magnetic field gradient dBzdy can be determined using the signal h2 obtained from the second sensor S2 and the signal h4 obtained from the fourth sensor S4.

[0150] The first angle α can be determined as a function f21 of the first magnetic field gradient dBzdx and the correction value D2, for example, as a function f23 of the square root of the first magnetic field gradient dBzdx and the correction value D2, for example, as a function f25 of the ratio of the first magnetic field gradient dBzdx to the square root of the correction value D2, for example, as an arcsine function of the ratio.

[0151] The second angle β can be determined as a function f22 of the second magnetic field gradient dBzdy and the correction value D2, for example, as a function f24 of the square root of the second magnetic field gradient dBzdy and the correction value D2, for example, as a function f26 of the ratio of the second magnetic field gradient dBzdy to the square root of the correction value D2, for example, as the arcsine function of that ratio. The value of √D2 is basically proportional to the magnetic field strength, but is somewhat sensitive to external disturbance fields.

[0152] Including, for example Figure 1 The movably mounted magnet 101 shown includes a magnet having, as shown in the figure, a magnet 101. Figure 6 The sensor device 102 with the sensor structure shown is used as follows: Figure 6 The sensor system 100 described in the formula can determine the orientation of the magnet 101 in a highly accurate manner, particularly by having reduced sensitivity to external disturbance fields and being highly insensitive to temperature changes. Furthermore, the sensor system is highly insensitive to magnet demagnetization and mounting tolerances, because if the magnet weakens and / or is positioned further away from the sensor device, both the numerator and denominator will increase or decrease.

[0153] Figure 7 This is a schematic representation of another sensor arrangement that can be used in embodiments of the present invention. Figure 7 The sensor arrangement can be regarded as Figure 6 A variant of the sensor arrangement, in which the fifth sensor S5 is also a 3D magnetic pixel capable of measuring three orthogonal magnetic field components Bx5, By5, and Bz5, but includes an integrated magnetic concentrator IMC and four horizontal Hall elements H5 to H8. Except that the magnetic field values ​​Bx5, By5, and Bz5 are derived from sensor signals h5 to h8 obtained from the horizontal Hall elements H5 to H8, for... Figure 6 All other things described regarding the sensor arrangement also apply. Figure 7 Sensor arrangement.

[0154] Figure 8 This can be achieved in embodiments of the present invention (e.g., in...). Figure 1 This is a schematic representation of another sensor arrangement used in sensor device 102. This sensor arrangement can be implemented on a semiconductor substrate 803 (e.g., a silicon substrate).

[0155] Figure 8 The sensor arrangement has four sensors S1 to S4 arranged on a virtual circle. Each of these sensors is a 3D magnetic pixel capable of measuring three orthogonal magnetic field components at its respective sensor position. For example, the first sensor S1 can measure three magnetic field components Bx1, By1, and Bz1; the second sensor S2 can measure three magnetic field components Bx2, By2, and Bz2; the third sensor S3 can measure three magnetic field components Bx3, By3, and Bz3; and the fourth sensor S4 can measure three magnetic field components Bx4, By4, and Bz4.

[0156] The three magnetic field differences or gradients dBxdx, dBydx, and dBzdx along the X-axis can be derived from the six magnetic field components measured by the first sensor S1 and the third sensor S3; and the three magnetic field differences or gradients dBxdy, dBydy, and dBzdy along the Y-axis can be derived from the six magnetic field components measured by the second sensor S2 and the fourth sensor S4.

[0157] The correction value D3 is calculated as the sum of the squares of the three magnetic field differences or gradients dBxdx, dBydx, and dBzdx along the X-axis, and the correction value D4 is calculated as the sum of the squares of the three magnetic field differences or gradients dBxdy, dBydy, and dBzdy along the Y-axis.

[0158] The first angle α can be determined as a function f41 of the first magnetic field gradient dBzdx and the correction value D3, for example, as a function f43 of the square root of the first magnetic field gradient dBzdx and the correction value D3, for example, as a function f45 of the ratio of the first magnetic field gradient dBzdx to the square root of the correction value D3, for example, as an arcsine function of the ratio.

[0159] The second angle β can be determined as a function f42 of the second magnetic field gradient dBzdy and the correction value D4, for example, as a function f44 of the square root of the second magnetic field gradient dBzdy and the correction value D4, for example, as a function f46 of the ratio of the second magnetic field gradient dBzdy to the square root of the correction value D4, for example, as an arcsine function of that ratio.

[0160] Figure 9This is a graph showing how the values ​​of D3 and D4 vary as a function of angles α and β with respect to the offset around the neutral position. Both values ​​are essentially constant (meaning proportional to the magnetic field strength of the magnet), but surprisingly, curves D3 in the XZ plane and D4 in the YZ plane have slightly flatter paths than curves D3 in the YZ plane and D4 in the XZ plane. This is why the correction value D3 is preferably used in combination with the first magnetic field gradient dBzdx and the correction value D4 is preferably used in combination with the second magnetic field gradient dBzdy. The values ​​of √D3 and √D4 are essentially proportional to the magnetic field strength and are highly insensitive to external disturbance fields.

[0161] Including, for example Figure 1 The movably mounted magnet 101 shown includes a magnet having, as shown in the figure, a magnet 101. Figure 8 The sensor device 102 with the sensor structure shown is used as follows: Figure 8 The sensor system 100 of the formula mentioned above can determine the orientation of the magnet 101 in a highly accurate manner, in particular in a manner that is highly insensitive to external interference fields, highly insensitive to temperature changes, highly insensitive to magnet demagnetization, and highly insensitive to installation tolerances.

[0162] Figure 10 This is a schematic representation of another sensor arrangement that can be used in embodiments of the present invention. Figure 10 The sensor arrangement can be regarded as Figure 8 A variant of the sensor arrangement, wherein each of the four sensors S1 to S4 includes a horizontal Hall element and four vertical Hall elements. For Figure 8 All other contents described in the sensor arrangement description, with necessary modifications, also apply. Figure 10 Sensor arrangement.

[0163] Figure 11 This can be achieved in embodiments of the present invention (e.g., in...). Figure 1 A schematic representation of another sensor arrangement used in sensor device 102.

[0164] Figure 11 The sensor arrangement can be regarded as Figure 5A A variant of the sensor arrangement that adds a fifth sensor S5 located at the center of the virtual circle; or considered as... Figure 6 The fifth sensor S5 is a variant of the 1D magnetic pixel sensor arrangement. The fifth sensor S5 is a horizontal Hall element and is capable of measuring the magnetic field component Bz5.

[0165] exist Figure 11In this embodiment, the correction factor D5 is calculated as a linear combination of signals obtained from three sensors S1, S5, and S3 positioned on the X-axis, for example, calculated as (Bz1 - 2*Bz5 + Bz3) indicating the second-order gradient of Bz along the X-axis. This value D5 can also be viewed as the difference between two first-order gradients (Bz3 - Bz5) and (Bz5 - Bz1). Another correction factor D6 is calculated as a linear combination of signals obtained from three sensors S2, S5, and S4 positioned on the Y-axis, for example, calculated as (Bz4 - 2*Bz5 + Bz2) indicating the second-order gradient of Bz along the Y-axis. This value D5 can also be viewed as the difference between two first-order gradients (Bz2 - Bz5) and (Bz5 - Bz4). The values ​​of D5 and D6 are substantially proportional to the magnetic field strength and are highly insensitive to external disturbance fields.

[0166] The first angle α can be determined as a function f51 of the first magnetic field gradient dBzdx and the correction value D5, for example, as a function f53 of the ratio of the first magnetic field gradient dBzdx to the value D5, for example, as the arctangent function of that ratio, optionally followed by nonlinear correction. For example, this can be achieved using a lookup table that optionally utilizes linear interpolation.

[0167] The second angle β can be determined as a function f52 of the second magnetic field gradient dBzdy and the correction value D6, for example, as a function f53 of the ratio of the first magnetic field gradient dBzdx to the value D5, for example, as the arctangent function of that ratio, optionally followed by nonlinear correction. For example, this can be achieved using a lookup table that optionally utilizes linear interpolation.

[0168] Including, for example Figure 1 The movably mounted magnet 101 shown includes a magnet having, as shown in the figure, a magnet 101. Figure 11 The sensor device 102 with the sensor structure shown is used as follows: Figure 1 The sensor system 100 of the formula mentioned above can determine the orientation of the magnet 101 in a highly accurate manner, in particular in a manner that is highly insensitive to external interference fields, highly insensitive to temperature changes, highly insensitive to magnet demagnetization, and highly insensitive to installation tolerances.

[0169] Figure 12 An example of a graph with arbitrary units is shown, where the first curve (black square) corresponds to the first gradient dBzdx(α) as a function of angular displacement, and the second curve (black circle) corresponds to the second gradient as a function of angular displacement, as can be seen from... Figure 11The sensor arrangement was used to obtain the gradient. Note that the second gradient of Bz along the X-axis can be calculated as (Bz3-Bz5)-(Bz5-Bz1), which is equal to (Bz3+Bz1-2*Bz5); and the second gradient of Bz along the Y-axis can be calculated as (Bz2-Bz5)-(Bz5-Bz4), which is equal to (Bz4+Bz2-2*Bz5).

[0170] Figure 13 It shows Figure 12 The ratio of the first-order gradient to the second-order gradient, expressed in arbitrary units, as a function of angular displacement. It can be seen that this curve exhibits good linearity.

[0171] Figure 14 This is a schematic representation of another sensor arrangement that can be used in embodiments of the present invention. Figure 14 The sensor arrangement can be regarded as Figure 11 A variant of the sensor arrangement, wherein sensors S1 and S3 are vertical Hall elements for measuring Bx1 and Bx3, having a maximum sensitivity axis oriented in the X direction; and wherein sensors S2 and S4 are vertical Hall elements for measuring By2 and By4, having a maximum sensitivity axis oriented in the Y direction; and wherein sensor S5 has at least one vertical Hall element V5, V7 for measuring Bx5, having a maximum sensitivity axis oriented in the X direction; and has at least one vertical Hall element V6, V8 for measuring By5, having a maximum sensitivity axis oriented in the Y direction.

[0172] The first gradient dBxdx of the magnetic field component Bx along the X-axis can be calculated based on signals Bx1 and Bx3. The second gradient dBydy of the magnetic field component By along the Y-axis can be calculated based on signals By2 and By4.

[0173] The correction factor D7 is calculated as a linear combination of signals obtained from three sensors S1, S5, and S3 positioned on the X-axis. For example, it is calculated as (Bx1 - 2*Bx5 + Bx3) indicating the second-order gradient of Bx along the X-axis. This value D7 can also be viewed as the difference between two first-order gradients (Bx3 - Bx5) and (Bx5 - Bx1). Similarly, another correction factor D8 can be calculated as a linear combination of signals obtained from three sensors S2, S5, and S4 positioned on the Y-axis. For example, it is calculated as (By4 - 2*By5 + By2) indicating the second-order gradient of By along the Y-axis. This value D8 can also be viewed as the difference between two first-order gradients (By2 - By5) and (By5 - By4). The values ​​of D7 and D8 are substantially proportional to the magnetic field strength and are highly insensitive to external disturbance fields.

[0174] The first angle α can be determined as a function f91 of the magnetic field gradient dBxdx and the correction value D7, for example, as a function f93 of the ratio of the magnetic field gradient dBxdx and the value D7, for example, as the arctangent function of that ratio.

[0175] The second angle β can be determined as a function f92 of the magnetic field gradient dBydy and the correction value D8, for example, as a function f93 of the ratio of the magnetic field gradient dBydy and the value D8, for example, as the arctangent function of that ratio.

[0176] The magnetic field gradients dBxdx, dBydy, and the second-order gradient d are shown. 2 Bxdx 2 d 2 Bydy 2 The curve will look very similar Figure 12 And their ratios will look very similar Figure 13 .

[0177] Including, for example Figure 1 The movably mounted magnet 101 shown includes a magnet having, as shown in the figure, a magnet 101. Figure 14 The sensor device 102 with the sensor structure shown is used as follows: Figure 1 The sensor system 100 of the formula mentioned above can determine the orientation of the magnet 101 in a highly accurate manner, in particular in a manner that is highly insensitive to external interference fields, highly insensitive to temperature changes, highly insensitive to magnet demagnetization, and highly insensitive to installation tolerances.

[0178] In all the embodiments shown above, the first angle α and the second angle β are calculated separately and independently of each other. In some embodiments, it is possible to regard the values ​​thus calculated as a first estimate of orientation, and it is possible to perform correction as a post-processing step (e.g., using a two-dimensional lookup table that optionally utilizes interpolation). The values ​​of this lookup table can be determined during the calibration process and can be stored in the non-volatile memory of the sensor device.

[0179] In the embodiments shown above, only horizontal Hall elements and vertical Hall elements are shown, but of course it is possible to use other magnetic sensor structures where other magnetic sensor structures (e.g., magnetoresistive (MR) sensors) can measure the same magnetic field components.

[0180] Figure 15 This illustrates what can be achieved in the aforementioned position sensor devices (e.g., in...). Figure 1 Electrical block diagram of circuit 1510 used in device 102.

[0181] The circuit 1510 includes multiple magnetic sensor elements M1 to M4 (e.g., horizontal Hall element, vertical Hall element, MR element, etc.), a processing unit 1530 (e.g., including analog components and / or digital components), and a non-volatile memory 1531 (e.g., EEPROM or flash memory).

[0182] Multiple magnetic sensor elements M1, M2, etc. can be as follows: Figure 5A , Figure 6 , Figure 7 , Figure 8 , Figure 10 , Figure 11 or Figure 14 Part of the sensor arrangement shown. The biasing and readout of Hall sensors or circuits including MR elements are well known in the art and therefore do not require further explanation here.

[0183] The first angle α and the second angle β can be determined in the manner described above (e.g., by using the mathematical formulas illustrated above and / or in the accompanying drawings, and / or by using an interpolation lookup table, optionally). Optionally, a post-correction step is also applied.

[0184] Used to determine magnetic field components (e.g., Figure 7 h5-h7) and / or used to determine the magnetic field gradient (e.g., Figure 5A Subtraction of signals (Bz1-Bz3) can be performed before or after amplification, in the analog or digital domain.

[0185] Processing unit 1530 may include a digital processor, which may optionally include or be connected to non-volatile memory 1531 (e.g., NVRAM, EEPROM, or flash memory). The memory may include one or more constants, lookup tables, polynomial coefficients, etc. Digital processor 1530 may be, for example, an 8-bit processor or a 16-bit processor.

[0186] Although not explicitly shown, sensor device 1510 may further include one or more components or sub-circuits selected from the group consisting of: amplifiers, differential amplifiers, analog-to-digital converters (ADCs), multiplexers, etc. The ADC may have a resolution of at least 8 bits, or at least 10 bits, or at least 12 bits, or at least 14 bits, or at least 16 bits.

[0187] Its main advantage is that the processing circuit does not have to perform a Fast Fourier Transform (FFT) or implement a neural network with hundreds of nodes.

[0188] Figure 16 and Figure 17 Showing like Figure 1 Two specific examples of sensor systems are shown in the diagram.Figure 16 In System 1600, the magnet is a cylindrical magnet with a diameter "D" of approximately 4 mm and a height "H" of approximately 4 mm, and the magnet is located at a distance "g" of approximately 3 mm from the sensor device. Figure 17 In system 1700, the magnet is a cylindrical magnet with a diameter "D" of approximately 8 mm and a height "H" of approximately 4 mm, and the magnet is located at a distance "g" of approximately 3 mm from the sensor device. However, these are merely two examples, and the invention is not limited thereto.

[0189] Figure 18 It shows Figure 1 A variant of the sensor system in which magnet 1801 is pivotable about a reference point "Pref" located at a predefined non-zero distance "dref" above a semiconductor substrate (not explicitly shown, but also defined by the XY plane). In this example, the reference point "Pref" is positioned on the positive Z-axis, meaning the magnet and the reference point are positioned on the same side of the substrate. However, the invention is not limited to this, and the reference point can also be positioned on the negative Z-axis, i.e., on the side of the substrate opposite to the magnet.

[0190] Figure 1 and Figure 11 The reference point "Pref" of the system shown is located outside the space defined by the size of the cylindrical magnet, and is in its neutral position when the magnet is in the neutral position (meaning when ψ = 0° and (At that time), the reference point was positioned between the semiconductor substrate and the magnet.

[0191] However, the invention is not limited thereto, and the invention will also work if the reference point “Pref” (real or imaginary) about which the axis of the magnet can pivot is located within or above the space defined by the magnet.

[0192] It has been found that the same formulas used above to calculate α and β can also be used in these cases. Optionally, the sensor device can be further adapted to apply post-processing to these angles in a manner known per se in the art, for example, by applying a first piecewise linear correction to angle α using a first predefined set of coefficients, and a second piecewise linear correction to angle β using a second predefined set of coefficients. These coefficients can be determined during the calibration step and can be stored in the non-volatile memory of the sensor device. In another embodiment, the post-processing step can be based on a two-dimensional lookup table utilizing two-dimensional interpolation.

[0193] Figure 19 A flowchart of a method 1900 for determining the orientation (α, β) of a cylindrical magnet having an axis (A) relative to a reference point “Pref” located on a semiconductor substrate is shown, the method comprising:

[0194] a) In step 1901, a silicon substrate including multiple magnetic sensors is provided, and multiple magnetic field components are measured at multiple sensor locations;

[0195] b) In step 1902, a first magnetic field gradient (dBx / dx or dBz / dx) is determined along the first direction (X) for a first magnetic field component (Bx or Bz) oriented in a first direction (X) parallel to the semiconductor substrate or in a third direction (Z) perpendicular to the substrate.

[0196] c) In step 1903, a second magnetic field gradient (dBy / dy or dBz / dy) is determined along the second direction (Y) of a second magnetic field component (By or Bz) oriented in a second direction (Y) parallel to the semiconductor substrate and perpendicular to the first direction (X) or in a third direction (Z) perpendicular to the substrate.

[0197] d) In step 1904, the first angle α formed between the orthogonal projection of the magnet's axis "A" onto the first virtual plane XZ parallel to the first direction X and the third direction Z is determined as a function of the first magnetic field gradient (dBx / dx or dBz / dx) and the first correction value (D1, D2, D3, D5, D7) related to the magnetic field strength of the magnet.

[0198] e) In step 1905, the second angle β formed between the orthogonal projection of the magnet's axis "A" onto the second virtual plane YZ parallel to the second direction Y and the third direction Z is determined as a function of the second magnetic field gradient (dBy / dy or dBz / dy) and the second correction values ​​(D1, D2, D4, D6, D8) related to the magnetic field strength of the magnet.

[0199] Step a) may include:

[0200] Provide with, for example Figure 5A The semiconductor substrate in which the sensors are arranged is shown, and Bz1, Bz2, Bz3, and Bz4 are measured at four sensor locations; or

[0201] Provide with, for example Figure 6 or Figure 7 The semiconductor substrate with the sensor arrangement shown is used to measure Bz1, Bz2, Bz3, Bz4, Bx5, By5, and Bz5 at five sensor locations; or

[0202] Provide with, for example Figure 8 or Figure 9 The semiconductor substrate with the sensor arrangement shown is used to measure Bx1, By1, Bz1, Bx2, By2, Bz2, Bx3, By3, Bz3, Bx4, By4, and Bz4 at four sensor locations; or

[0203] Provide with, for example Figure 11 The semiconductor substrate with the sensor arrangement shown is used to measure Bz1, Bz2, Bz3, Bz4, and Bz5 at five sensor locations; or

[0204] Provide with, for example Figure 14 The semiconductor substrate with the sensor arrangement shown is used to measure Bx1, By2, Bx3, By4, Bx5, and By5 at five sensor locations; or

[0205] Step b) may include determining Figure 5A , Figure 6 , Figure 7 , Figure 8 , Figure 10 , Figure 11 dBzdx in the sensor arrangement; or determine Figure 14 dBxdx in the sensor arrangement.

[0206] Step c) may include determining Figure 5A , Figure 6 , Figure 7 , Figure 8 , Figure 10 , Figure 11 dBzdy in the sensor arrangement; or determine Figure 14 dBxdy in the sensor arrangement.

[0207] Preferably, the first and second correction values ​​are substantially proportional to the magnetic field strength of the method, and may be, for example:

[0208] Predefined functions of temperature (e.g., Figure 5A D1 in the middle);

[0209] The sum of squares of the three orthogonal magnetic field components (Bx, By, Bz) (for example, Figure 6 and Figure 7 D2 in the middle);

[0210] The sum of squares of the three orthogonal magnetic field gradients along the first direction (X) (e.g., Figure 8 and Figure 10 D3 in the middle), or the sum of squares of three orthogonal magnetic field gradients along the second direction (Y) (e.g., Figure 11 and Figure 14 (D4 in the middle);

[0211] Determine the second-order gradient (d) of the first magnetic field component (Bx; Bz) along the first direction (X). 2 Bx / dx 2 ;d 2 Bz / dx 2 )(For example,Figure 5A D5 and Figure 6 D7); or the second gradient (d) of the second magnetic field component (By; Bz) along the second direction (Y). 2 By / dy 2 ;d 2 Bz / dy 2 )(For example, Figure 7 D6 and Figure 8 (D8 in the middle).

[0212] Figure 10 A flowchart of method 2000 is shown, in which angles α and β are determined as functions of the out-of-plane magnetic field gradient (dBz / dx and dBz / dy) and correction values ​​(D1 to D4) indicating the magnetic field strength of the magnet. Method 2000 is Figure 11 Method 1900 is a special case, and can be combined with, for example Figure 14 , Figure 5A , Figure 6 , Figure 7 and Figure 8 The sensor arrangement shown in the figure is used together. Method 2000 includes the following steps:

[0213] a) In step 2001, a silicon substrate including a plurality of magnetic sensors is provided, and a plurality of magnetic field components are measured at the plurality of sensor locations;

[0214] b) In step 2002, a first magnetic field gradient (dBz / dx) is determined for the magnetic field component (Bz) oriented in a direction perpendicular to the substrate (Z) along a first direction (X) parallel to the substrate.

[0215] c) In step 2003, the magnetic field component (Bz) oriented in a direction perpendicular to the substrate (Z) is determined to have a second magnetic field gradient (dBz / dy) along a second direction (Y) parallel to the substrate and perpendicular to the first direction (X);

[0216] d) In step 2004, the first angle (α) formed between the orthogonal projection of the magnet's axis (A) onto a first plane (XZ) parallel to the first direction X and the third direction (Z) is determined as a function of the first magnetic field gradient (dBz / dx) and the first correction values ​​(D1, D2, D3) indicating the magnetic field strength of the magnet;

[0217] e) In step 2005, the second angle (β) formed between the orthogonal projection of the magnet's axis (A) onto the second plane (YZ) parallel to the second direction (Y) and the third direction (Z) is determined as a function of the second magnetic field gradient (dBz / dy) and the second correction values ​​(D1, D2, D4) indicating the magnetic field strength of the magnet;

[0218] Figure 10 A flowchart of method 2100 is shown, in which angles α and β are determined as functions of the first and second gradients. Method 2100 is... Figure 11 Method 1900 is a special case, and can be combined with, for example Figure 14 and Figure 5A Figure 6 Figure 7 Figure 8 Figure 10 Figure 11 Figure 14 Figure 5A Figure 6 Figure 7 Figure 8 Figure 10 Figure 11 Figure 14 Figure 5A Figure 6 Figure 7 Figure 8 Figure 10 Figure 11 Figure 14 Figure 5A Figure 6 Figure 7 Figure 8 Figure 10 Figure 11 Figure 14 Figure 5A Figure 6 Figure 7 Figure 8 Figure 10 Figure 11 Figure 14 Figure 5A Figure 6 Figure 7 Figure 8 Figure 10 Figure 11 Figure 14 Figure 5A Figure 6 Figure 7 Figure 8 Figure 10 Figure 11 Figure 14 Figure 5A Figure 6 Figure 7 Figure 8 Figure 10 Figure 11 Figure 14 Figure 5A Figure 6 Figure 7 Figure 8 Figure 10 Figure 11 Figure 14 Figure 5A Figure 6 Figure 7 Figure 8 Figure 10 Figure 11 Figure 14 Figure 5A Figure 6 Figure 7 Figure 8 Figure 10 Figure 11 Figure 14 Figure 5A Figure 6 Figure 7 Figure 8 Figure 10 Figure 11 Figure 14 Figure 5A Figure 6 Figure 7 Figure 8 Figure 10 Figure 11 Figure 14 Figure 5A Figure 6 Figure 7 Figure 8 Figure 10 Figure 11 Figure 14 Figure 5A Figure 6 Figure 7 Figure 8 Figure 10 Figure 11 Figure 14 Figure 5A Figure 6 Figure 7 Figure 8 Figure 10 Figure 11 Figure 14 Figure 5A Figure 6 Figure 7 Figure 8 Figure 10 Figure 11 Figure 14 Figure 5A Figure 6 Figure 7 Figure 8 Figure 10 Figure 11 Figure 14 Figure 5A Figure 6 Figure 7 Figure 8 Figure 10 Figure 11 Figure 14 Figure 5A Figure 6 Figure 7 Figure 8 Figure 10 Figure 11 Figure 14 Figure 5A Figure 6 Figure 7 Figure 8 Figure 10 Figure 11 Figure 14 Figure 5A Figure 6 Figure 7 Figure 8 Figure 10 Figure 11 Figure 14 Figure 5A Figure 6 Figure 7 Figure 8 Figure 10 Figure 11 Figure 14 Figure 5A Figure 6 Figure 7 Figure 8 Figure 10 Figure 11 Figure 14 Figure 5A Figure 6 Figure 7 Figure 8 Figure 10 Figure 11 Figure 14 Figure 5A Figure 6 Figure 7 Figure 8 Figure 10 Figure 11 Figure 14 Figure 5A Figure 6 Figure 7 Figure 8 Figure 10 Figure 11 Figure 14 Figure 5A Figure 6 Figure 7 Figure 8 Figure 10 Figure 11 Figure 14 Figure 5A Figure 6 Figure 7 Figure 8 Figure 10 Figure 11 Figure 14 Figure 5A Figure 6 Figure 7 Figure 8 Figure 10 Figure 11 Figure 14 Figure 5A Figure 6 Figure 7 Figure 8 Figure 10 Figure 11 Figure 14 Figure 5A Figure 6 Figure 7 Figure 8 Figure 10 Figure 11 Figure 14 Figure 5A Figure 6 Figure 7 Figure 8 Figure 10 Figure 11 Figure 14 Figure 5A Figure 6 Figure 7 Figure 8 Figure 10 Figure 11 Figure 14 Figure 5A Figure 6 Figure 7 Figure 8 Figure 10 Figure 11 Figure 14 Figure 5A Figure 6 Figure 7 Figure 8 Figure 10 Figure 11 Figure 14 Figure 5A Figure 6 Figure 7 Figure 8 Figure 10 Figure 11 Figure 14 Figure 5A Figure 6 Figure 7 Figure 8 Figure 10 Figure 11 Figure 14 Figure 5A Figure 6 Figure 7 Figure 8 Figure 10 Figure 11 Figure 14 Figure 5A Figure 6 Figure 7 Figure 8 Figure 10 Figure 11 Figure 14 Figure 5A Figure 6 Figure 7 Figure 8 Figure 10 Figure 11 Figure 14 Figure 5A Figure 6 Figure 7 Figure 8 Figure 10 Figure 11 Figure 14 Figure 5A Figure 6 Figure 7 Figure 8 Figure 10 Figure 11 Figure 14 Figure 5A Figure 6 Figure 7 Figure 8 Figure 10 Figure 11 Figure 14 Figure 5A Figure The sensor arrangement shown in the figure is used together. Method 2100 includes the following steps:

[0219] a) In step 2101, a silicon substrate including multiple magnetic sensors is provided, and multiple magnetic field components are measured at multiple sensor locations;

[0220] b) In step 2102, a first magnetic field gradient (dBx / dx or dBz / dx) is determined along the first direction (X) for a first magnetic field component (Bx or Bz) oriented in a first direction (X) parallel to the semiconductor substrate or in a third direction (Z) perpendicular to the substrate.

[0221] c) In step 2103, a second magnetic field gradient (dBy / dy or dBz / dy) is determined along the second direction (Y) of a second magnetic field component (By or Bz) oriented in a second direction (Y) parallel to the semiconductor substrate and orthogonal to the first direction (X) or oriented in a third direction (Z) perpendicular to the substrate.

[0222] d) In step 2104, the first angle (α) formed between the orthogonal projection of the magnet's axis (A) onto a first plane (XZ) parallel to the first direction X and the third direction (Z) is determined as the first magnetic field gradient (dBx / dx or dBz / dx) and the second-order gradient (d) of the first magnetic field component (Bx or Bz) along the first direction (X). 2 Bx / dx 2 or d 2 Bz / dx 2 The function;

[0223] e) In step 2105, the second angle (β) formed between the orthogonal projection of the magnet's axis (A) onto a second plane (YZ) parallel to the second direction Y and the third direction (Z) is determined as the second magnetic field gradient (dBy / dy or dBz / dy) and the second-order gradient (dBy / dy) of the second magnetic field component (By or Bz) along the second direction (Y). 2 By / dy 2 or d 2 Bz / dy 2 The function of ).

Claims

1. A sensor device for determining the orientation of a magnet having an axis (A), the sensor device comprising: A silicon substrate including multiple magnetic sensors; Processing circuit (1530), the processing circuit (1530) being configured to: a) Determine the first magnetic field gradient (dBx / dx; dBz / dx) along the first direction (X) for a first magnetic field component (Bx; Bz) oriented in a first direction (X) parallel to the silicon substrate or in a third direction (Z) perpendicular to the substrate; b) Determine the second magnetic field gradient (dBy / dy; dBz / dy) along the second direction (Y) of the second magnetic field component (By; Bz) oriented in a second direction (Y) parallel to the silicon substrate and perpendicular to the first direction (X) or in the third direction (Z) perpendicular to the substrate; c) The first angle (α) is determined as a function of the first magnetic field gradient (dBx / dx; dBz / dx) and the first correction value (D1, D2, D3, D5, D7); d) Determine the second angle (β) as a function of the second magnetic field gradient (dBy / dy; dBz / dy) and the second correction value (D1, D2, D4, D6, D8), wherein the first angle (α) and the second angle (β) correspond to the orientation of the magnet; Its features Step a) includes: determining a first magnetic field gradient (dBz / dx) along the first direction (X) of the magnetic field component (Bz) oriented perpendicular to the silicon substrate; and Step b) includes: determining a second magnetic field gradient (dBz / dy) of the magnetic field component (Bz) oriented perpendicular to the substrate along the second direction (Y); Furthermore, the first correction value and the second correction value (D1, D2, D3, D4) are selected from the group consisting of the following: a predefined function of temperature, the sum of squares of the three orthogonal magnetic field components (Bx, By, Bz), the sum of squares of the three orthogonal magnetic field gradients (dBx / dx, dBy / dx, dBz / dx) along the first direction (X), and the sum of squares of the three orthogonal magnetic field gradients (dBx / dy, dBy / dy, dBz / dy) along the second direction (Y).

2. The sensor device according to claim 1, in, The sensor device is further configured to measure temperature; and Step c) includes: determining the first angle (α) as a function of the first magnetic field gradient (dBz / dx) and the temperature as a predefined function; and Step d) includes: determining the second angle (β) as a function of the second magnetic field gradient (dBz / dy) and the temperature as a predefined function.

3. The sensor device according to claim 1, in, The sensor device is further configured to measure three orthogonal magnetic field components (Bx, By, Bz) and to determine the sum of squares of these magnetic field components; and Step c) includes: determining the first angle (α) as a function of the first magnetic field gradient (dBz / dx) and the sum of squares; and Step d) includes: determining the second angle (β) as a function of the second magnetic field gradient (dBz / dy) and the sum of squares.

4. The sensor device according to claim 1, in, The sensor device is further configured to determine three orthogonal magnetic field gradients (dBx / dx, dBy / dx, dBz / dx) along the first direction (X), and to determine a first sum of squares of these gradients; and The sensor device is further configured to determine three orthogonal magnetic field gradients (dBx / dy, dBy / dy, dBz / dy) along the second direction (Y), and to determine the second sum of squares of these gradients; and Step c) includes: determining the first angle (α) as a function of the first magnetic field gradient (dBz / dx) and the first sum of squares; and Step d) includes: determining the second angle (β) as a function of the second magnetic field gradient (dBz / dy) and the second sum of squares.

5. A sensor device for determining the orientation of a magnet having an axis (A), the sensor device comprising: A silicon substrate including multiple magnetic sensors; Processing circuit (1530), the processing circuit (1530) being configured to: a) Determine the first magnetic field gradient (dBx / dx; dBz / dx) along the first direction (X) for a first magnetic field component (Bx; Bz) oriented in a first direction (X) parallel to the silicon substrate or in a third direction (Z) perpendicular to the substrate; b) Determine the second magnetic field gradient (dBy / dy; dBz / dy) along the second direction (Y) of the second magnetic field component (By; Bz) oriented in a second direction (Y) parallel to the silicon substrate and perpendicular to the first direction (X) or in the third direction (Z) perpendicular to the substrate; c) The first angle (α) is determined as a function of the first magnetic field gradient (dBx / dx; dBz / dx) and the first correction value (D1, D2, D3, D5, D7); d) Determine the second angle (β) as a function of the second magnetic field gradient (dBy / dy; dBz / dy) and the second correction value (D1, D2, D4, D6, D8), wherein the first angle (α) and the second angle (β) correspond to the orientation of the magnet; Its features The sensor device is further configured to determine the second-order gradient (d) of the first magnetic field component (Bx; Bz) along the first direction (X). 2 Bx / dx 2 ;d 2 Bz / dx 2 ), and is used to determine the second-order gradient (d) of the second magnetic field component (By; Bz) along the second direction (Y). 2 By / dy 2 ;d 2 Bz / dy 2 );and Step c) includes: determining the first angle (α) as the first magnetic field gradient (dBx / dx; dBz / dx) and the second-order gradient (d) of the first magnetic field component (Bx; Bz) along the first direction (X). 2 Bx / dx 2 ;d 2 Bz / dx 2 The function; and Step d) includes: determining the second angle (β) as the second magnetic field gradient (dBy / dy; dBz / dy) of the second magnetic field component (By; Bz) along the second direction (Y) and the second-order gradient (d 2 By / dy 2 ;d 2 Bz / dy 2 The function of ).

6. The sensor device according to claim 5, in, Step a) includes: determining a first magnetic field gradient (dBx / dx) along the first direction (X) of a first magnetic field component (Bx) oriented in a first direction (X) parallel to the silicon substrate; and Step b) includes: determining a second magnetic field gradient (dBy / dy) along the second direction (Y) of a second magnetic field component (By) oriented in a second direction (Y) parallel to the silicon substrate and perpendicular to the first direction (X); and Step c) includes: determining the first angle (α) as the first magnetic field gradient (dBx / dx) of the first magnetic field component (Bx) along the first direction (X) and the second-order gradient (dBx / dx). 2 Bx / dx 2 The function; and Step d) includes: determining the second angle (β) as the second magnetic field gradient (dBy / dy) of the second magnetic field component (By) along the second direction (Y) and the second-order gradient (dBy / dy). 2 By / dy 2 The function of ).

7. The sensor device according to claim 5, in, Step a) includes: determining a first magnetic field gradient (dBz / dx) along the first direction (X) of a first magnetic field component (Bz) oriented perpendicular to the silicon substrate; and Step b) includes: determining a second magnetic field gradient (dBz / dy) of the first magnetic field component (Bz) oriented perpendicular to the silicon substrate along a second direction (Y) perpendicular to the first direction; and Step c) includes: determining the first angle (α) as the first magnetic field gradient (dBz / dx) and the second-order gradient (d) of the first magnetic field component (Bz) along the first direction (X). 2 Bz / dx 2 The function; and Step d) includes: determining the second angle (β) as the second magnetic field gradient (dBz / dy) of the first magnetic field component (Bz) along the second direction (Y) and the second-order gradient (dBz / dy). 2 Bz / dy 2 The function of ).

8. A position sensor system, the position sensor system comprising: The sensor device according to any one of the preceding claims, the sensor device comprising the silicon substrate; as well as A magnet that can pivot about a reference point (Pref) having a predefined position relative to the silicon substrate.

9. The position sensor system according to claim 8, Includes only a single magnet.

10. The position sensor system according to claim 8 or 9, wherein, The system further includes a joystick connected to the magnet.

11. A method (1900) for determining the orientation of a magnet, said magnet being pivotable about a reference point (Pref) having a predefined position relative to a silicon substrate, said method comprising: a) Provide (1901) a silicon substrate comprising multiple magnetic sensors, and measure multiple magnetic field components at multiple sensor locations; b) Determine (1902) the first magnetic field gradient (dBx / dx; dBz / dx) along the first direction (X) of the first magnetic field component (Bx; Bz) oriented in a first direction (X) parallel to the silicon substrate or in a third direction (Z) perpendicular to the substrate; c) Determine (1903) the second magnetic field gradient (dBy / dy; dBz / dy) of the second magnetic field component (By; Bz) oriented in a second direction (Y) parallel to the silicon substrate and perpendicular to the first direction (X) or in the third direction (Z) along the second direction (Y); d) The first angle (α) formed between the orthogonal projection of the axis (A) of the magnet on the first virtual plane (XZ) parallel to the first direction (X) and the third direction (Z) is determined (1904) as a function of the first magnetic field gradient (dBx / dx or dBz / dx) and the first correction value (D1, D2, D3, D5); e) Determine (1905) the second angle (β) formed between the orthogonal projection of the axis (A) of the magnet onto a second virtual plane (YZ) parallel to the second direction (Y) and the third direction (Z) as a function of the second magnetic field gradient (dBy / dy or dBz / dy) and the second correction value (D1, D2, D4, D6), wherein the first angle (α) and the second angle (β) correspond to the orientation of the magnet; Its features Step b) includes: determining (2002) a first magnetic field gradient (dBz / dx) along a first direction (X) parallel to the substrate for a magnetic field component (Bz) oriented in a direction (Z) perpendicular to the substrate; Step c) includes: determining (2003) a second magnetic field gradient (dBz / dy) along the second direction (Y) of the magnetic field component (Bz) oriented in a direction perpendicular to the substrate (Z); Step d) includes: determining the first angle (α) (2004) as a function of the first magnetic field gradient (dBz / dx) and the first correction value (D1, D2, D3); Step e) includes: determining the second angle (β) (2005) as a function of the second magnetic field gradient (dBz / dy) and the second correction value (D1, D2, D4).

12. A method (2101) for determining the orientation of a magnet, said magnet being pivotable about a reference point (Pref) having a predefined position relative to a silicon substrate, said method comprising: a) Provide (1901) a silicon substrate comprising multiple magnetic sensors, and measure multiple magnetic field components at multiple sensor locations; b) Determine (1902) the first magnetic field gradient (dBx / dx; dBz / dx) along the first direction (X) of the first magnetic field component (Bx; Bz) oriented in a first direction (X) parallel to the silicon substrate or in a third direction (Z) perpendicular to the substrate; c) Determine (1903) the second magnetic field gradient (dBy / dy; dBz / dy) of the second magnetic field component (By; Bz) oriented in a second direction (Y) parallel to the silicon substrate and perpendicular to the first direction (X) or in the third direction (Z) along the second direction (Y); d) The first angle (α) formed between the orthogonal projection of the axis (A) of the magnet on the first virtual plane (XZ) parallel to the first direction (X) and the third direction (Z) is determined (1904) as a function of the first magnetic field gradient (dBx / dx or dBz / dx) and the first correction value (D1, D2, D3, D5); e) Determine (1905) the second angle (β) formed between the orthogonal projection of the axis (A) of the magnet onto a second virtual plane (YZ) parallel to the second direction (Y) and the third direction (Z) as a function of the second magnetic field gradient (dBy / dy or dBz / dy) and the second correction value (D1, D2, D4, D6), wherein the first angle (α) and the second angle (β) correspond to the orientation of the magnet; Its features The method further includes: determining the second-order gradient (d) of the first magnetic field component (Bx; Bz) along the first direction (X). 2 Bx / dx 2 ;d 2 Bz / dx 2 );and The method further includes: determining the second-order gradient (d) of the second magnetic field component (By; Bz) along the second direction (Y). 2 By / dy 2 ;d 2 Bz / dy 2 );and Step d) includes: determining the first angle (α) as the first magnetic field gradient (dBx / dx; dBz / dx) and the second-order gradient (d) of the first magnetic field component (Bx; Bz) along the first direction (X). 2 Bx / dx 2 ;d 2 Bz / dx 2 The function; and Step e) includes: determining the second angle (β) as the second magnetic field gradient (dBy / dy; dBz / dy) of the second magnetic field component (By; Bz) along the second direction (Y) and the second-order gradient (dBy / dy; dBz / dy). 2 By / dy 2 ;d 2 Bz / dy 2 The function of ).

13. The method (2101) according to claim 12, in, Step b) includes: determining a first magnetic field gradient (dBx / dx) along the first direction (X) of a first magnetic field component (Bx) oriented in a first direction (X) parallel to the silicon substrate; and Step c) includes: determining a second magnetic field gradient (dBy / dy) along the second direction (Y) of a second magnetic field component (By) oriented in a second direction (Y) parallel to the silicon substrate and perpendicular to the first direction (X); and Step d) includes: determining the first angle (α) as the first magnetic field gradient (dBx / dx) of the first magnetic field component (Bx) along the first direction (X) and the second-order gradient (dBx / dx). 2 Bx / dx 2 The function; and Step e) includes: determining the second angle (β) as the second magnetic field gradient (dBy / dy) of the second magnetic field component (By) along the second direction (Y) and the second-order gradient (dBy / dy). 2 By / dy 2 The function of ).

14. The method (2101) according to claim 12, in, Step b) includes: determining a first magnetic field gradient (dBz / dx) along the first direction (X) of a first magnetic field component (Bz) oriented perpendicular to the silicon substrate; and Step c) includes: determining a second magnetic field gradient (dBz / dy) of the first magnetic field component (Bz) oriented perpendicular to the silicon substrate along a second direction (Y) perpendicular to the first direction; and Step d) includes: determining the first angle (α) as the first magnetic field gradient (dBz / dx) of the first magnetic field component (Bz) along the first direction (X) and the second-order gradient (dBz / dx). 2 Bz / dx 2 The function; and Step e) includes: determining the second angle (β) as the second magnetic field gradient (dBz / dy) of the first magnetic field component (Bz) along the second direction (Y) and the second-order gradient (dBz / dy). 2 Bz / dy 2 The function of ).

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