MEMS element and method for manufacturing the same

Abstract

The present disclosure proposes a MEMS element and a manufacturing method thereof, which belongs to the field of semiconductor technology. The MEMS element includes: one or more MEMS units, a wiring layer arranged on the MEMS unit, one or more first electrodes and one or more second electrodes insulated and arranged on the side of the wiring layer away from the MEMS unit, and the first electrode and the second electrode are arranged at intervals; the first terminal of one or more MEMS units is electrically connected to the one or more first electrodes through the wiring layer, and the second terminal of one or more MEMS units is electrically connected to the one or more second electrodes through the wiring layer; multiple MEMS units are electrically connected through the wiring layer. The present disclosure realizes the electrical connection between the MEMS unit and each electrode through the wiring layer, and also realizes the electrical connection between multiple MEMS units, which is more flexible in application, and in actual application, there is no need to additionally design a redistribution layer or apply other lead methods.

Description

Technical Field

[0001] The present disclosure belongs to the technical field of MEMS devices, and in particular relates to a MEMS element and a manufacturing method thereof. Background Art

[0002] 3D micro devices formed based on MEMS technology have the characteristics of small size, light weight, high reliability, high integration, etc., so that MEMS components are widely used in various electronic devices. For example, MEMS switches can be used in various applications that require high-speed, electrically low-current switching in circuits; MEMS capacitors can be used in a variety of circuits, such as tunable filters, tunable phase shifters, and tunable antennas. Therefore, with the diversification of application circuits, the requirements for the size, specifications, and production cycle of MEMS components are getting higher and higher.

[0003] However, current MEMS components are more inclined to customized specifications, and have not formed a complete specification standard, with high application costs. In addition, the electrodes of each MEMS unit are retained in the MEMS component, and the first electrode and the second electrode are directly electrically connected to the MEMS unit. For example, the first electrode or the second electrode is connected to the terminal or wafer substrate of the MEMS unit, and the flexibility of use is poor. Furthermore, in the actual application of MEMS components, it is necessary to design a packaging substrate or a redistribution layer (RDL) or apply other lead methods according to the MEMS component size and specifications required by the customer, which may increase the design cost and may also introduce additional ESR or ESL. Summary of the invention

[0004] The present disclosure aims to solve at least one of the technical problems existing in the prior art and provides a MEMS element and a method for manufacturing the same.

[0005] In one aspect of the present disclosure, a MEMS element is provided, comprising: one or more MEMS units, a wiring layer disposed on the MEMS unit, and one or more first electrodes and one or more second electrodes insulated and disposed on a side of the wiring layer away from the MEMS unit, wherein the first electrodes and the second electrodes are spaced apart; wherein:

[0006] One or more first terminals of the MEMS units are electrically connected to the one or more first electrodes through the wiring layer, and one or more second terminals of the MEMS units are electrically connected to the one or more second electrodes through the wiring layer;

[0007] The multiple MEMS units are electrically connected through the wiring layer.

[0008] Optionally, the multiple MEMS units are electrically connected through the routing layer in at least one of a series connection, a parallel connection and a hybrid connection.

[0009] Optionally, the routing layer includes a first routing portion, a second routing portion and a third routing portion; wherein,

[0010] The first terminal of one of the MEMS units is electrically connected to the first electrode through the first wiring portion, and the second terminal of another MEMS unit is electrically connected to the second electrode through the second wiring portion; and the first terminals and second terminals of multiple MEMS units are connected in series through the third wiring portion.

[0011] Optionally, the routing layer includes a first routing portion and a second routing portion;

[0012] The first terminals of the plurality of MEMS units are connected in parallel through the first wiring portion, and the first wiring portion is electrically connected to the first electrode;

[0013] The second terminals of the plurality of MEMS units are connected in parallel via the second wiring portion, and the second wiring portion is electrically connected to the second electrode.

[0014] Optionally, the routing layer includes a first routing portion, a second routing portion and a third routing portion;

[0015] The first terminals of at least two MEMS units among the plurality of MEMS units are electrically connected in parallel to the first electrode through the first wiring portion;

[0016] The second terminals of at least two MEMS units among the plurality of MEMS units are electrically connected in parallel to the second electrode through the second wiring portion, and the first electrode, the at least two MEMS units and the second electrode form at least two parallel circuits;

[0017] The MEMS units in at least one of the parallel circuits are electrically connected in series via the third wiring portion.

[0018] Optionally, the number of the first electrode and the number of the second electrode are both one.

[0019] Optionally, a first dielectric layer is further provided on the wiring layer, and one or more first electrode connection through holes and one or more second electrode connection through holes are alternately provided on the first dielectric layer;

[0020] The first electrode and the second electrode are respectively disposed in the corresponding first electrode connecting through hole and the second electrode connecting through hole and are electrically connected to the wiring layer.

[0021] Optionally, a plurality of the MEMS units are adjacent to each other via scribe lines.

[0022] Optionally, the MEMS unit is at least one of a MEMS capacitor unit, a MEMS resistor unit and a MEMS inductor unit.

[0023] Optionally, the MEMS capacitor unit includes one or more layers of first polar plates, one or more layers of second polar plates, one or more layers of second dielectric layers, a third dielectric layer, a first conductive portion, and a second conductive portion; wherein,

[0024] The first electrode plate and the second electrode plate are alternately stacked, and the second dielectric layer is arranged between the first electrode plate and the second electrode plate, and the third dielectric layer is arranged on a side of the first electrode plate or the second electrode plate away from the second dielectric layer;

[0025] The first conductive part is insulated from the second conductive part and is at least disposed in the third dielectric layer, one end of the first conductive part is electrically connected to the first electrode plate to form a first terminal, one end of the second conductive part is electrically connected to the second electrode plate to form a second terminal, and the other ends of the first conductive part and the second conductive part are both electrically connected to the routing layer.

[0026] Another aspect of the present disclosure provides a method for manufacturing a MEMS element, the method comprising:

[0027] forming a plurality of MEMS units on one or more wafers;

[0028] forming a wiring layer on one or more MEMS units, wherein the plurality of MEMS units are electrically connected via the wiring layer;

[0029] Forming a first dielectric layer on the wiring layer, and providing one or more first electrode connection through holes and one or more second electrode connection through holes at intervals on the first dielectric layer;

[0030] One or more first electrodes are correspondingly formed in the one or more first electrode connecting through holes, and one or more second electrodes are correspondingly formed in the one or more second electrode connecting through holes.

[0031] Optionally, a wiring layer is formed on the plurality of MEMS units, including:

[0032] A plurality of routing portions are correspondingly formed on the first terminals and the second terminals of the plurality of MEMS units, and the plurality of routing portions are electrically connected to the MEMS units through at least one connection mode of series connection, parallel connection and mixed connection.

[0033] The present disclosure proposes a MEMS element and a manufacturing method thereof, wherein the MEMS element comprises: one or more MEMS units, a routing layer disposed on the MEMS unit, one or more first electrodes and one or more second electrodes insulated and disposed on the side of the routing layer away from the MEMS unit, wherein the first electrode and the second electrode are disposed at intervals; the first terminal of the one or more MEMS units is electrically connected to the one or more first electrodes through the routing layer, and the second terminal of the one or more MEMS units is electrically connected to the one or more second electrodes through the routing layer; and multiple MEMS units are electrically connected through the routing layer. The present disclosure can customize the routing layer according to demand to change the wiring layout, and the routing layer can realize the electrical connection between the MEMS unit and each electrode, and also realize the electrical connection between multiple MEMS units, which is more flexible in application, and in actual application, there is no need to additionally design RDL or apply other lead methods, thereby reducing R&D costs and cycles. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 It is a schematic diagram of a wafer structure with a MEMS unit according to an embodiment of the present disclosure;

[0035] Figure 2 A cross-sectional schematic diagram of a MEMS capacitor structure according to another embodiment of the present disclosure;

[0036] Figure 3 A cross-sectional schematic diagram of a MEMS capacitor structure according to another embodiment of the present disclosure;

[0037] Figure 4 is a cross-sectional schematic diagram of a MEMS capacitor unit according to another embodiment of the present disclosure;

[0038] Figure 5 is a cross-sectional schematic diagram of a MEMS element according to another embodiment of the present disclosure;

[0039] Figure 6 It is a schematic structural explosion diagram of a MEMS element according to another embodiment of the present disclosure;

[0040] Figure 7 It is a schematic diagram of a wafer structure with a MEMS element according to another embodiment of the present disclosure;

[0041] Figure 8 It is a schematic diagram of the structure explosion of the MEMS element in Embodiment 1 of the present disclosure;

[0042] Fig. 9 A schematic diagram of a wafer portion after the routing layer of the MEMS element in Embodiment 1 of the present disclosure is fabricated;

[0043] Fig.10 This is a schematic diagram of the internal circuit of the MEMS element in Embodiment 1 of the present disclosure;

[0044] Fig.11 It is a schematic diagram of the structural explosion of the MEMS element in Embodiment 2 of the present disclosure;

[0045] Fig.12 Schematic diagram of the internal circuit of the MEMS element in Embodiment 2 of the present disclosure;

[0046] Fig.13 It is a schematic diagram of the structural explosion of the MEMS element in Embodiment 3 of the present disclosure;

[0047] Fig.14 This is a schematic diagram of the internal circuit of the MEMS element in Embodiment 3 of the present disclosure;

[0048] Fig.15 It is a schematic diagram of the structural explosion of the MEMS element in Embodiment 4 of the present disclosure;

[0049] Fig.16 This is a schematic diagram of the internal circuit of the MEMS element in Embodiment 4 of the present disclosure;

[0050] Fig.17 A schematic diagram of a process for manufacturing a MEMS element according to another embodiment of the present disclosure;

[0051] Fig.18 A flowchart of a method for manufacturing a MEMS element according to another embodiment of the present disclosure;

[0052] Reference numerals:

[0053] 100.MEMS components;

[0054] 101, wafer, 102, scribe groove, 103, wafer substrate;

[0055] 110, MEMS unit, 110a, MEMS capacitor unit, 110b, MEMS resistor unit, 110c, MEMS inductor unit;

[0056] 111, a first electrode plate, 112, a second electrode plate, 113, a second dielectric layer, 114, a third dielectric layer, 115, a first conductive portion, 116, a second conductive portion, 117, a first electrode plate connecting through hole, 118, a second electrode plate connecting through hole, 119, a fourth dielectric layer, 119a, a first conductive portion connecting through hole, 119b, a second conductive portion connecting through hole;

[0057] 120, routing layer, 121, first routing portion, 122, second routing portion, 123, third routing portion;

[0058] 130. a first electrode;

[0059] 140. a second electrode;

[0060] 150, a first dielectric layer, 151, a first electrode connecting through hole, 152, a second electrode connecting through hole. DETAILED DESCRIPTION

[0061] In order to enable those skilled in the art to better understand the technical solution of the present disclosure, the present disclosure is further described in detail below in conjunction with the accompanying drawings and specific implementation methods. Obviously, the described embodiments are part of the embodiments of the present disclosure, rather than all of the embodiments. Based on the described embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0062] like Figures 1 to 16 As shown, in one aspect of the present disclosure, a MEMS element 100 is proposed, comprising: one or more MEMS units 110, a wiring layer 120 arranged on the MEMS unit 110, one or more first electrodes 130 and one or more second electrodes 140 insulated and arranged on the side of the wiring layer 120 away from the MEMS unit 110, and the first electrode 130 and the second electrode 140 are arranged at intervals; wherein the MEMS unit 110 has a first terminal and a second terminal, the first terminal of the one or more MEMS units 110 is electrically connected to the first electrode 130 through the wiring layer 120, and the second terminal of the one or more MEMS units 110 is electrically connected to the second electrode 140 through the wiring layer 120; and multiple MEMS units 110 are electrically connected through the wiring layer 120.

[0063] In this embodiment, electrical connection between one or more MEMS units and the first electrode and the second electrode is achieved through the routing layer. At the same time, circuit connection between multiple MEMS units is also achieved through the routing layer, thereby completing the routing of the MEMS element. This is beneficial for setting the number of electrodes and the connection method between each MEMS unit as needed to obtain MEMS elements of different specifications and sizes. The application is more flexible, and in actual application, there is no need to additionally design a redistribution layer or apply other lead methods, thereby reducing development costs and development cycles.

[0064] It should be noted that, in this embodiment, there is no specific limitation on the circuit connection method between multiple MEMS units in a MEMS element through the wiring layer. For example, multiple MEMS units are connected in series, parallel or mixed through the wiring layer. Of course, in a MEMS element, multiple MEMS units are not limited to any of the above connection methods, and can also include two or three connection methods of series, parallel and mixed. For example, multiple MEMS units can also be connected in series and parallel, multiple series, or series and mixed, parallel and mixed, multiple parallel, multiple mixed, etc.

[0065] It should be further explained that, in this embodiment, the number of the first electrode and the second electrode is not specifically limited. Only one first electrode and one second electrode may be provided, or a plurality of first electrodes and a plurality of second electrodes less than the number of MEMS units may be provided, so that the final MEMS element only retains two required electrodes or a small number of required electrodes to complete the control of all MEMS units in the entire MEMS element. Of course, a plurality of first electrodes and a plurality of second electrodes equal to the number of MEMS units may be provided, or a plurality of first electrodes and a plurality of second electrodes greater than the number of MEMS units may be provided to achieve complex MEMS unit combinations and voltage control.

[0066] In some preferred embodiments, in a MEMS element, when a plurality of MEMS units are electrically connected through a wiring layer in parallel, series, or mixed connection to form a group of MEMS units, a first electrode and a second electrode are electrically connected to the group of MEMS units, so that the final MEMS element only retains two required electrodes, thereby completing the control of all MEMS units in the entire MEMS element.

[0067] In other preferred embodiments, in a MEMS element, when multiple MEMS units are electrically connected through a wiring layer in at least one of parallel, series and mixed connection to form multiple groups of MEMS units, a first electrode and a second electrode can be set, or a plurality of first electrodes and second electrodes less than the number of MEMS units can be set. For example, when multiple MEMS units are electrically connected in series to form a group of MEMS units, another multiple MEMS units are electrically connected in a mixed manner to form another group of MEMS units, and another multiple MEMS units are electrically connected in parallel to form another group of MEMS units, a first electrode and a second electrode are set, and the first electrode and the second electrode are electrically connected to the three groups of MEMS units at the same time; two first electrodes and two second electrodes can also be set, one of the first electrodes and one of the second electrodes are electrically connected to one group of MEMS units, and the other first electrode and the other second electrode are electrically connected to the other two groups of MEMS units at the same time; three first electrodes and three second electrodes can also be set, and each first electrode and each second electrode are electrically connected to a group of MEMS units. In this way, the final MEMS element only retains two or a small number of required electrodes to complete the control of all MEMS units in the entire MEMS element, providing convenience for customer applications.

[0068] The following is a detailed description of the connection method of the routing layer when each MEMS unit is electrically connected in series:

[0069] When a MEMS element includes multiple MEMS units, the routing layer includes a first routing portion, a second routing portion and a third routing portion; wherein a first terminal of one of the multiple MEMS units is electrically connected to a first electrode through the first routing portion; a second terminal of another MEMS unit among the multiple MEMS units is electrically connected to a second electrode through the second routing portion; and the multiple MEMS units are connected in series through the third routing portion, thereby achieving electrical connection between the multiple MEMS units in series through the routing layer.

[0070] The following is a detailed description of the connection method of the routing layer when the MEMS units are electrically connected in parallel:

[0071] When a MEMS element includes multiple MEMS units, the routing layer includes a first routing portion and a second routing portion; the first terminals of the multiple MEMS units are connected in parallel through the first routing portion, and the first routing portion is electrically connected to the first electrode; the second terminals of the multiple MEMS units are connected in parallel through the second routing portion, and the second routing portion is electrically connected to the second electrode, thereby achieving electrical connection between the multiple MEMS units in parallel through the routing layer.

[0072] The following is a detailed description of the connection method of the routing layer when the MEMS units are electrically connected in a hybrid manner:

[0073] When a MEMS element includes multiple MEMS units, the routing layer includes a first routing portion, a second routing portion and a third routing portion; the first terminals of at least two MEMS units among the multiple MEMS units are electrically connected in parallel to the first electrode through the first routing portion, and the second terminals of at least two MEMS units among the multiple MEMS units are electrically connected in parallel to the second electrode through the second routing portion, so that the first electrode, the at least two MEMS units and the second electrode form at least two parallel circuits; the MEMS units in at least one parallel circuit are electrically connected in series through the third routing portion, so as to realize the electrical connection between the multiple MEMS units in a mixed manner through the routing layer.

[0074] It should be understood that, in the embodiment where each MEMS unit is electrically connected in a hybrid manner, at least two MEMS units electrically connected in parallel through the first routing portion and at least two MEMS units electrically connected in parallel through the second routing portion may be different MEMS units, or may be partially identical MEMS units. For example, when the MEMS element includes four or more MEMS units, two or more MEMS units are electrically connected in parallel to the first electrode through the first routing portion, and the other two or more MEMS units are electrically connected in parallel to the second electrode through the second routing portion. For another example, when the MEMS element includes three MEMS units, namely the first MEMS unit, the second MEMS unit and the third MEMS unit, the first MEMS unit and the second MEMS unit are electrically connected in parallel to the first electrode through the first routing portion, and the second MEMS unit and the third MEMS unit are electrically connected in parallel to the second electrode through the second routing portion.

[0075] Furthermore, in this embodiment, a dielectric layer can be provided to insulate the electrodes and between the electrodes and the wiring layer. It should be understood that connecting vias are also required to be provided on the dielectric layer between the electrodes and the wiring layer so that the electrodes and the wiring layer are electrically connected through the electrode connecting vias.

[0076] Specifically, Figure 5 and Figure 6 As shown, a first dielectric layer 150 is arranged on the wiring layer 120, and one or more first electrode connecting through holes 151 and one or more second electrode connecting through holes 152 are spaced apart on the first dielectric layer 150, and the wiring layer 120 located thereunder is exposed through the first electrode connecting through holes 151 and the second electrode connecting through holes 152, so that one or more first electrodes 130 and one or more second electrodes 140 are respectively penetrated into the corresponding first electrode connecting through holes 151 and the second electrode connecting through holes 152, so that the first electrode 130, the second electrode 140 are conductively connected to the wiring layer 120, and at the same time, the first electrode 130 and the second electrode 140 are spaced apart.

[0077] It should be further explained that, in this embodiment, the shape, size and arrangement of the first electrode and the second electrode are not limited and can be designed according to actual needs.

[0078] It should be noted that the material of the first electrode and the second electrode is a conductor with good conductivity and low resistivity, which can be a metal such as aluminum, gold, copper, etc., or an alloy such as nickel-titanium alloy, copper-nickel alloy, etc., or other materials, without specific limitation.

[0079] It should be noted that the shape, size, number and arrangement of the first electrode connecting through holes and the second electrode connecting through holes are not limited, wherein the number of the first electrode connecting through holes and the second electrode connecting through holes can be determined according to the number of the first electrode and the second electrode.

[0080] It should be noted that the first dielectric layer may be composed of a single dielectric material such as silicon oxide, silicon nitride, hafnium oxide, zirconium oxide, etc., or may be composed of a combination of multiple dielectric materials, and there is no specific limitation on this.

[0081] Furthermore, in this embodiment, there is no specific limitation on the type of MEMS unit. For example, the MEMS unit can be a passive MEMS device, including a MEMS capacitor, a MEMS inductor or a MEMS resistor, or an active device, including a MEMS speaker, a MEMS micromirror or a MEMS resonator.

[0082] It should be understood that MEMS units are generally based on wafers and are densely packed on the wafer. In this way, the densely packed MEMS units made on a wafer can all be one type of device, such as MEMS capacitors, or can have both one type of device and another type of device, such as MEMS capacitors, MEMS inductors, and MEMS resistors.

[0083] It should be further explained that a plurality of MEMS units closely packed on a wafer can be connected adjacently via scribe grooves, so that the desired MEMS element can be obtained by dicing, and in the MEMS element, the electrical connection of each MEMS unit is completed through the routing layer.

[0084] In some preferred embodiments, please refer to Figure 1 and Fig.15 , with the wafer 101 as the substrate, a plurality of MEMS units 110 are densely arranged on one side of the wafer 101 , wherein the plurality of MEMS units 110 include a MEMS capacitor unit 110 a , a MEMS resistor unit 110 b , and a MEMS inductor unit 110 c , so as to maximize the use of the wafer, and a scribe groove 102 is provided between each MEMS unit 110 on the wafer 101 , and the plurality of MEMS units 110 are adjacent to each other through the scribe groove 102 .

[0085] In some other preferred embodiments, please refer to Figure 1 and Figure 8 , Fig. 9 , Fig.11 and Fig.13, with wafer 101 as a substrate, multiple MEMS units 110 are densely arranged on one side of the wafer 101 , the multiple MEMS units 110 are MEMS capacitor units 110 a , and scribe grooves 102 are provided between the MEMS capacitor units 110 a on the wafer 101 , and the multiple MEMS capacitor units 110 a are adjacent to each other through the scribe grooves 102 .

[0086] It should be noted that, in this embodiment, when the MEMS element includes a plurality of MEMS capacitor units, the plurality of MEMS capacitor units may be the same or different.

[0087] Specifically, Figures 2 to 7 As shown, taking the MEMS element 100 including a plurality of MEMS capacitor units 110a as an example, each MEMS capacitor unit 110a includes a capacitor structure composed of one or more layers of first plates 111, one or more layers of second plates 112, and one or more layers of second dielectric layers 113. The first plates 111 and the second plates 112 are stacked alternately, and the first plates 111 in each layer are connected to each other, and the second plates 112 in each layer are connected to each other, and a second dielectric layer 113 is provided between each layer of the first plates 111 and each layer of the second plates 112, so that the first plates 111 and the second plates 112 are insulated from each other.

[0088] It should be noted that in this embodiment, there is no specific limitation on the number of layers of the first electrode plate and the second electrode plate included in the capacitor structure. The number of layers of the first electrode plate and the second electrode plate can be one layer or multiple layers, and the number of layers of the two can be the same or different.

[0089] It should be further explained that the material of the first electrode plate and the second electrode plate is a conductor with good conductivity and low resistivity, which can be a metal such as aluminum, gold, copper, etc., or an alloy such as nickel-titanium alloy, etc., or other materials.

[0090] In some preferred embodiments, please refer to Figure 2 In order to increase the specific surface area of ​​the MEMS element, one or more deep trenches are arranged on the wafer 101 and in a direction perpendicular to the surface of the wafer 101. A first electrode 111, a second dielectric layer 113, a second electrode 112, a second dielectric layer 113, and a first electrode 111 are sequentially stacked on the wafer substrate 103 in the deep trenches to form a capacitor structure. In other words, two first electrodes, one second electrode, and two second dielectric layers are filled in the deep trenches to form a capacitor structure.

[0091] In some other preferred embodiments, please refer to Figure 3, one or more deep grooves are arranged on the wafer 101 and in a direction extending perpendicular to the surface of the wafer 101. When the wafer substrate 103 has a low resistivity, the wafer substrate 103 can be used as a layer in the first electrode plate 111, that is, a second dielectric layer 113, a second electrode plate 112, a second dielectric layer 113, and a first electrode plate 111 are stacked from bottom to top on the wafer substrate 103 in the deep groove to form a capacitor structure. Of course, in other embodiments, the substrate with low resistivity can also be used as the second electrode plate, which is not specifically limited.

[0092] It should be noted that the material of the wafer can be a semiconductor material such as silicon, silicon carbide, gallium arsenide, etc. Of course, the material of the wafer can also be an insulating material such as glass, quartz, etc.

[0093] It should be further explained that structures such as thin columns and plate-shaped fins may be provided in the deep grooves to increase the facing area between the first electrode plate and the second electrode plate in the capacitor structure, thereby increasing the specific surface area of ​​the capacitor structure.

[0094] For further information, please refer to Figure 4 and Figure 5 In the MEMS capacitor unit 110a, in addition to the capacitor structure, it also includes a third dielectric layer 114 and a conductive layer, and the conductive layer includes an electrically isolated first conductive portion 115 and a second conductive portion 116. Among them, the third dielectric layer 114 is arranged on the first electrode 111 or the second electrode 112 of the capacitor structure, and at least one or more first electrode plate connecting through holes 117 corresponding to the first conductive portion 115 and one or more second electrode plate connecting through holes 118 corresponding to the second conductive portion 116 are arranged through the third dielectric layer 114, and the first electrode plate connecting through holes 117 and the second electrode plate connecting through holes 118 are arranged at intervals, and the first electrode plates 111 of each layer are exposed through the first electrode plate connecting through holes 117, and the second electrode plates 112 of each layer are exposed through the second electrode plate connecting through holes 118. In this way, the first conductive portion 115 is penetrated in the first electrode plate 111 or the second electrode plate 112. In a plate connecting through hole 117, one end thereof is connected to each layer of the first plates 111 in the capacitor structure through the first plate connecting through hole 117, the first plate 111 and the first conductive part 115 form a first terminal of the MEMS capacitor unit, and the other end of the first conductive part 115 is connected to the wiring layer 120; the second conductive part 116 is passed through the second plate connecting through hole 118, one end thereof is electrically connected to each layer of the second plates 112 in the capacitor structure through the second plate connecting through hole 118, the second plate 112 and the second conductive part 116 form a second terminal of the MEMS capacitor unit, and the other end of the second conductive part 116 is connected to the wiring layer 120.

[0095] It should be noted that, in this embodiment, the shape, size, number and arrangement of the first electrode plate connecting through hole and the second electrode plate connecting through hole are not limited. Among them, the number of the first electrode plate connecting through hole and the second electrode plate connecting through hole can be determined according to the number of layers of the first electrode plate and the second electrode plate. For example, when the first electrode plate is one layer and the second electrode plate is one layer, one first electrode plate connecting through hole and one second electrode plate connecting through hole are required to be provided, and the first conductive part is accommodated in the first electrode plate connecting through hole to connect with the first electrode plate, and the second conductive part is accommodated in the second electrode plate connecting through hole to connect with the second electrode plate. For another example, when the first electrode plate has two layers and the second electrode plate has one layer, two first electrode plate connecting through holes need to be set. Of course, these two first electrode plate connecting through holes should be connected. In this way, the first conductive part is accommodated in the two first electrode plate connecting through holes, and the first conductive part is connected to one layer of the first electrode plate through one of the first electrode plate connecting through holes, and is connected to the other layer of the first electrode plate through another first electrode plate connecting through hole; in addition, one second electrode plate connecting through hole needs to be set, and the second conductive part is connected to the second electrode plate through one second electrode plate connecting through hole.

[0096] It should be further explained that the positions of the first plate connection through-hole and the second plate connection through-hole mentioned above can be designed according to the capacitor structure. For example, when the capacitor structure includes a first plate and a second plate, and the third dielectric layer is located on the second plate, the first plate connection through-hole is set on the third dielectric layer and the second dielectric layer to expose the first plate, and the second plate connection through-hole is set on the third dielectric layer to expose the second plate. For another example, when the capacitor structure includes two first plates and a second plate, and the third dielectric layer is located on the first plate, one of the first plate connection through-holes is set on the third dielectric layer to expose the first plate of the uppermost layer, and the other first plate connection through-hole and the second plate connection through-hole are both set on the third dielectric layer and the second dielectric layer to expose the first plate and the second plate of the lowermost layer, respectively. Of course, it should be understood that in other embodiments, the first electrode plate connecting through hole and the second electrode plate connecting through hole may penetrate the first electrode plate and / or the second electrode plate to expose the first electrode plate and the second electrode plate.

[0097] It should be noted that the second dielectric layer and the third dielectric layer can be composed of a single dielectric material such as silicon oxide, silicon nitride, hafnium oxide, zirconium oxide, etc., or a combination of multiple dielectric materials, which is not specifically limited.

[0098] It should be noted that the material of the conductive layer can be a conductor with good conductivity and low resistivity, such as metals such as aluminum, gold, copper, etc., or alloys such as nickel-titanium alloy, copper-nickel alloy, etc., or other materials.

[0099] For further information, please refer to Figure 4 and Figure 5 The MEMS capacitor unit 110a also includes a fourth dielectric layer 119 covering the conductive layer, and one or more first conductive part connecting through holes 119a and one or more second conductive part connecting through holes 119b are formed on the fourth dielectric layer 119. The first conductive part connecting through hole 119a is connected to the first electrode connecting through hole 117, and the second conductive part connecting through hole 119b is connected to the second electrode connecting through hole 118. In this way, the first conductive part 115 is accommodated in the first conductive part connecting through hole 119a and the first electrode connecting through hole 117, and is connected to the second electrode connecting through hole 118. The first conductive part connecting through hole 119a exposes the first conductive part 115, so that the wiring layer 120 is connected to the first conductive part 115 of the MEMS capacitor unit, and then connected to the first electrode 111 in the capacitor structure; the second conductive part 116 is accommodated in the second conductive part connecting through hole 119b and the second electrode plate connecting through hole 118, and the second conductive part 116 is exposed through the second conductive part connecting through hole 119b, so that the wiring layer 120 is connected to the second conductive part 116 of the MEMS capacitor unit, and then connected to the second electrode 112 in the capacitor structure.

[0100] It should be noted that, in this embodiment, the fourth dielectric layer may also be composed of a single dielectric material such as silicon oxide, silicon nitride, hafnium oxide, zirconium oxide, etc., or may be composed of a combination of multiple dielectric materials, which is not limited here.

[0101] It should be further explained that, in this embodiment, the shape, size, number and arrangement of the first conductive part connecting through holes and the second conductive part connecting through holes are not limited and can be specifically set according to the number and arrangement of the first conductive part and the second conductive part.

[0102] like Fig.17 and Fig.18 As shown, another aspect of the present disclosure provides a method S100 for manufacturing a MEMS element, comprising the following specific steps S110 to S140:

[0103] S110 , forming a plurality of MEMS units on one or more wafers.

[0104] It should be noted that the densely packed MEMS units made on a wafer may all be one type of device, such as all MEMS capacitors, or may include both one type of device and another type of device, such as both MEMS capacitors, MEMS inductors, and MEMS resistors.

[0105] It should be further explained that, in order to facilitate dicing, a scribe groove is provided between each MEMS unit on the wafer. After the production of the required MEMS components is completed, only the scribe groove between each MEMS component is exposed, and the scribe groove between the MEMS units inside each MEMS component is covered by the first dielectric layer and the routing layer. During processing, the scribe groove can be cut along the scribe groove to obtain the required MEMS component. In addition to facilitating dicing, the routing layer can be arranged on the scribe groove inside the MEMS component to facilitate the connection of the MEMS units inside the MEMS component.

[0106] In some preferred embodiments, taking the formation of multiple MEMS capacitor units on a wafer as an example, the formation process is as follows: Figures 2 to 7 As shown, a wafer 101 having one or more deep trenches is provided, and a first electrode plate 111, a second dielectric layer 113, a second electrode plate 112, a second dielectric layer 113, and a first electrode plate 111 are sequentially formed in the deep trenches using multiple mask plates to form a capacitor structure. Afterwards, a third dielectric layer 114 is formed on the first electrode plate 111 of the capacitor structure using multiple mask plates, and a first electrode plate connecting through hole 117 and a second electrode plate connecting through hole 118 are formed on the third dielectric layer 114 and the second dielectric layer 113, so that the first electrode plate 111 and the second electrode plate 112 are exposed. A conductive layer is formed on the third dielectric layer 114, a fourth dielectric layer 119 is formed on the conductive layer, and a first conductive portion connecting through hole 119a and a second conductive portion connecting through hole 119b are formed on the fourth dielectric layer 119, so that the first conductive portion 115 and the second conductive portion 116 on the conductive layer are exposed to complete the manufacture of the MEMS capacitor unit 110a, wherein the first conductive portion 115 and the first electrode 111 form a first terminal of the MEMS capacitor unit 110a, and the second conductive portion 116 and the second electrode 112 form a second terminal of the MEMS capacitor unit 110a.

[0107] It should be understood that in this embodiment, the MEMS capacitor unit is not limited to the structure described above, and a first electrode plate and a second electrode plate including other numbers of layers may also be provided, and no specific limitation is made to this, and the multiple MEMS capacitor units in each MEMS element may be the same or different.

[0108] S120 , forming a wiring layer on one or more MEMS units, wherein the multiple MEMS units are electrically connected through the wiring layer.

[0109] Specifically, combined with Figure 5 and Figure 6As shown, taking the formation of a routing layer on a plurality of MEMS capacitor units as an example, the size and capacitance of the MEMS element are determined according to customer requirements, a mask plate for making the routing layer is designed, and a wafer on which the MEMS capacitor unit 110a has been made is processed, and a routing portion 120 is formed on the first terminal and the second terminal of one or more MEMS capacitor units 110a through the mask plate, and the electrical connection of each MEMS capacitor unit 110a is completed through the routing portion 120. For example, a plurality of routing portions are electrically connected to each MEMS capacitor unit through at least one connection method selected from series, parallel and mixed connection, so as to realize the formation of MEMS capacitor elements with different sizes and capacitances.

[0110] In some preferred embodiments, a wiring layer may be fabricated to connect a plurality of MEMS capacitor units in any of series, parallel, and mixed connection modes, and each MEMS capacitor unit may be connected through the wiring layer to form a group of MEMS capacitor units.

[0111] In other preferred embodiments, a wiring layer may be fabricated to connect multiple MEMS capacitor units in at least one of series connection, parallel connection and mixed connection, and the MEMS capacitor units may be connected through the wiring layer to form multiple groups of MEMS capacitor units.

[0112] It should be understood that in this embodiment, it is not limited to forming a routing layer on multiple MEMS capacitor units. The routing layer can also be formed on multiple MEMS capacitor units, multiple MEMS resistor units, and multiple MEMS inductor units. The specifications of the MEMS components are determined according to customer needs, and a mask plate for making the routing layer is designed, and a wafer with multiple MEMS capacitor units, multiple MEMS resistor units, and multiple MEMS inductor units manufactured is processed.

[0113] S130, forming a first dielectric layer on the wiring layer, and providing one or more first electrode connection through holes and one or more second electrode connection through holes at intervals on the first dielectric layer.

[0114] Specifically, the formation process of the first electrode connection through hole and the second electrode connection through hole is as follows: Figure 5 to Figure 6As shown, a mask plate is designed for making a first dielectric layer, a first electrode connecting through hole, and a second electrode connecting through hole. The first dielectric layer 150 is formed on the wiring layer 120 through the mask plate, and one or more first electrode connecting through holes 151 and one or more second electrode connecting through holes 152 are respectively formed on the first dielectric layer 150 through the other two mask plates. The first electrode connecting through holes 151 and the second electrode connecting through holes 152 are arranged at intervals. The first electrode connecting through holes 151 and the second electrode connecting through holes 152 expose a portion of the wiring layer 120 covered by the first dielectric layer 150, so as to achieve conduction between each electrode and the wiring layer through each connecting through hole.

[0115] It should be noted that, in this embodiment, the number of the first electrode connection through hole and the second electrode connection through hole is not specifically limited, and can be set according to the number of the first electrode and the second electrode required by the customer. For example, when the number of the first electrode and the second electrode required is one, the number of the first connection through hole and the second connection through hole is also one, and when the number of the first electrode and the second electrode required is multiple, the number of the first connection through hole and the second connection through hole is also multiple.

[0116] S140, forming one or more first electrodes in one or more first electrode connecting through holes, and forming one or more second electrodes in one or more second electrode connecting through holes.

[0117] Specifically, combined with Figure 6 to Figure 7 As shown, the formation process of the first electrode and the second electrode is as follows: a first electrode 130 is correspondingly formed in each first electrode connecting through hole 151, and a second electrode 140 is correspondingly formed in each second electrode connecting through hole 152, so as to realize the connection between the first electrode 130, the second electrode 140 and the wiring layer 120, and the first electrode 130 and the second electrode 140 are insulated from each other.

[0118] It should be noted that in this embodiment, in order to further improve the flexibility of application, the number of first electrodes, the number of second electrodes and their arrangement in the MEMS element are not limited. It can be one first electrode and one second electrode, or multiple first electrodes and multiple second electrodes less than the number of MEMS units, so as to complete the control of all MEMS capacitor units in the entire MEMS element through two electrodes or a small number of electrodes. Of course, it is also possible to set a plurality of first electrodes and a plurality of second electrodes equal to the number of MEMS units, and it is also possible to set a plurality of first electrodes and a plurality of second electrodes greater than the number of MEMS units, so as to realize complex MEMS unit combinations and voltage control.

[0119] It is still necessary to explain that, in the present embodiment, in the process of manufacturing the routing layer, the first dielectric layer, the first electrode connecting through hole, the second electrode connecting through hole, the first electrode and the second electrode, the routing layers on each MEMS unit on the wafer can be designed to be unconnected and cut to produce a MEMS element including only one MEMS unit, or the routing layer can be manufactured to complete the electrical connection of multiple MEMS units, and the MEMS element including multiple MEMS units can be obtained by cutting.

[0120] It should still be noted that, in this embodiment, there is no limitation on the number of MEMS units included in each MEMS element on the same wafer after all process steps other than dicing are completed, that is, after all process steps other than dicing are completed, the number of MEMS units included in each MEMS element on the wafer may be the same or different.

[0121] In this embodiment, one or more MEMS units that are densely arranged, insulated from each other and connected through a substrate are manufactured on one or more wafers based on a set of masks and manufacturing processes, and the size and specifications of the finished MEMS components are then determined according to customer needs. Only a few masks need to be designed, the wafers with the MEMS units manufactured are processed, and a small number of subsequent processes such as forming a routing layer to achieve electrical connection of each MEMS unit, electrode manufacturing, etc. are completed to manufacture the MEMS components required by the customer on the wafer, and the wafers are cut according to the size and specifications required by the customer, thereby quickly and massively completing the manufacture of MEMS components of different specifications, reducing the research and development cost and time cycle of MEMS components of different specifications and sizes.

[0122] Furthermore, based on the manufacturing method of this embodiment, MEMS elements of different specifications can be manufactured, for example, 0.6*0.3mm 2 、1.2*0.6mm 2 、1.8*0.9mm 2 、2.4*1.2mm 2 Of course, MEMS elements of other specifications can also be formed, and there is no specific limitation on this.

[0123] The structure of the MEMS element will be further explained below in conjunction with several specific embodiments:

[0124] Example 1

[0125] This example takes a MEMS element formed by connecting four MEMS units with a first electrode and a second electrode based on a wiring layer as an example. The specific structure is as follows:

[0126] like Figures 8 to 10As shown, the MEMS element 100 includes four MEMS capacitor units 110a and a wiring layer 120 covering the four MEMS capacitor units 110a, a first electrode 130, a second electrode 140, and a first dielectric layer 150 arranged on the wiring layer 120; wherein the wiring layer 120 includes a first wiring portion 121 and a second wiring portion 122, and a first electrode connecting through hole 151 and a second electrode connecting through hole 152 are arranged on the first dielectric layer 150 at intervals, and the first electrode 130 is arranged through the first wiring portion 121 and the second wiring portion 122. An electrode connecting through hole 151 is electrically connected to the first wiring portion 121, and is further electrically connected to the first terminal (the first terminal includes the first conductive portion and the first electrode plate 111) through the first conductive portion connecting through hole 119a in the MEMS capacitor unit 110a. The second electrode 140 is passed through the second electrode connecting through hole 152 to be electrically connected to the second wiring portion 122, and is further electrically connected to the second terminal (the second terminal includes the second conductive portion and the second electrode plate 112) through the second conductive portion connecting through hole 119b in the MEMS capacitor unit.

[0127] Please continue to refer to Fig.10 The circuit connection of four MEMS capacitor units and a first electrode and a second electrode based on the routing layer is as follows: the first plates 111 of the four MEMS capacitor units 110a are connected in parallel to the first electrode 130 through the first routing portion 121, and the second plates 112 of the four MEMS capacitor units 110a are connected in parallel to the second electrode 140 through the second routing portion 122. That is to say, the electrical connection between the four MEMS capacitor units is completed in parallel through the routing layer to form a group of MEMS capacitor units. At the same time, the routing layer also realizes the electrical connection of the group of MEMS capacitor units with a first electrode and a second electrode, which is more flexible to use.

[0128] Example 2

[0129] This example takes a MEMS element formed by connecting four MEMS capacitor units with a first electrode and a second electrode based on a wiring layer as an example. The specific structure is as follows:

[0130] like Fig.11 and Fig.12As shown, the MEMS element 100 includes four MEMS capacitor units 110a and a wiring layer 120 covering the four MEMS capacitor units 110a, a first electrode 130, a second electrode 140, and a first dielectric layer 150 arranged on the wiring layer 120; wherein the wiring layer 120 includes a first wiring portion 121, a second wiring portion 122 and a third wiring portion 123, and a first electrode connecting through hole 151 and a second electrode connecting through hole 152 are arranged on the first dielectric layer 150 at intervals, and the first electrode 130 passes through the first and second electrodes 140. The first electrode connecting through hole 151 is provided to be electrically connected to the first wiring portion 121, and is further electrically connected to the first terminal (the first terminal includes the first conductive portion and the first electrode plate 111) through the first conductive portion connecting through hole 119a in the MEMS capacitor unit 110a. The second electrode 140 is passed through the second electrode connecting through hole 152 to be electrically connected to the second wiring portion 122, and is further electrically connected to the second terminal (the second terminal includes the second conductive portion and the second electrode plate 112) through the second conductive portion connecting through hole 119b in the MEMS capacitor unit 110a.

[0131] Please continue to refer to Fig.12 , the circuit connection of four MEMS capacitor units and a first electrode and a second electrode based on the routing layer is as follows: the first electrode plate 111 in one of the MEMS capacitor units 110a is connected to the first electrode 130 through the first routing portion 121, and the second electrode plate 112 on the other MEMS capacitor unit 110a is connected to the second electrode 140 through the second routing portion 122. The second electrode plate 112 in one of the MEMS capacitor units 110a, the first electrode plate 111 and the second electrode plate 112 in the remaining two MEMS capacitor units 110a, and the first electrode plate 111 of the other MEMS capacitor unit are sequentially connected in series through the third routing portion 123. That is to say, the electrical connection between the four MEMS capacitor units is completed in series through the routing layer to form a group of MEMS capacitor units. At the same time, the routing layer also realizes the electrical connection of the group of MEMS capacitor units with a first electrode and a second electrode, which is more flexible to use.

[0132] Example 3

[0133] This example takes a MEMS element formed by connecting four MEMS capacitor units with a first electrode and a second electrode based on a wiring layer as an example. The specific structure is as follows:

[0134] like Fig.13 and Fig.14As shown, the MEMS element 100 includes four MEMS capacitor units 110a and a wiring layer 120 covering the four MEMS capacitor units 110a, a first electrode 130, a second electrode 140, and a first dielectric layer 150 arranged on the wiring layer 120; wherein the wiring layer 120 includes a first wiring portion 121, a second wiring portion 122 and a third wiring portion 123, and a first electrode connecting through hole 151 and a second electrode connecting through hole 152 are arranged on the first dielectric layer 150 at intervals, and the first electrode 130 passes through the first and second electrodes 140. The first electrode connecting through hole 151 is provided to be electrically connected to the first wiring portion 121, and is further electrically connected to the first terminal (the first terminal includes the first conductive portion and the first electrode plate 111) through the first conductive portion connecting through hole 119a in the MEMS capacitor unit 110a. The second electrode 140 is passed through the second electrode connecting through hole 152 to be electrically connected to the second wiring portion 122, and is further electrically connected to the second terminal (the second terminal includes the second conductive portion and the second electrode plate 112) through the second conductive portion connecting through hole 119b in the MEMS capacitor unit 110a.

[0135] Please continue to refer to Fig.14 , the circuit connection of four MEMS capacitor units and a first electrode and a second electrode based on the routing layer is as follows: the first plates 111 of two MEMS capacitor units 110a are connected in parallel to the first electrode 130 through the first routing portion 121, and the second plates 112 of the other two MEMS capacitor units 110a are connected in parallel to the second electrode 140 through the second routing portion 122, wherein the second plates 112 of the two MEMS capacitor units 110a and the first plates 111 of the other two MEMS capacitor units 110a are connected in series through the third routing portion 123, that is, the electrical connection between the four MEMS capacitor units is completed in a mixed manner through the routing layer to form a group of MEMS capacitor units, and at the same time, the electrical connection of the group of MEMS capacitor units with a first electrode and a second electrode is also realized through the routing layer, which is more flexible to use.

[0136] Example 4

[0137] This example uses a MEMS element formed by connecting a MEMS capacitor unit, a MEMS inductor unit, a MEMS resistor unit, a first electrode, and a second electrode based on a wiring layer as an example for explanation. The specific structure is as follows:

[0138] like Fig.15 and Fig.16As shown, the MEMS element 100 includes a MEMS capacitor unit 110a, a MEMS resistor unit 110b, a MEMS inductor unit 110c, and a wiring layer 120 covering the three MEMS units, a first electrode 130, a second electrode 140, and a first dielectric layer 150 arranged on the wiring layer 120; wherein the wiring layer includes a first wiring portion 121, a second wiring portion 122 and a third wiring portion 123, and a first electrode connecting through hole 151 and a second electrode connecting through hole 152 are arranged at intervals on the first dielectric layer 150, the first electrode 130 is penetrated through the first electrode connecting through hole 151 to be electrically connected to the first wiring portion 121, and is further electrically connected to the first terminal of the MEMS unit, the second electrode 140 is penetrated through the second electrode connecting through hole 152 to be electrically connected to the second wiring portion 122, and is further electrically connected to the second terminal of the MEMS unit.

[0139] Please continue to refer to Fig.16 , the circuit connection of three MEMS units and a first electrode and a second electrode based on the wiring layer is as follows: the first terminals of the MEMS capacitor unit 110a and the MEMS resistor unit 110b are electrically connected in parallel to the first electrode 130 through the first wiring portion 121, the second terminals of the MEMS capacitor unit 110a and the MEMS inductor unit 110c are electrically connected in parallel to the second electrode 140 through the second wiring portion 122, and at the same time, the second terminal of the MEMS resistor unit 110b and the first terminal of the MEMS inductor unit 110c are electrically connected in series through the third wiring portion 123. In other words, the electrical connection between the three MEMS units is completed in a mixed-parallel manner through the wiring layer to form a group of MEMS units. At the same time, the wiring layer also realizes the electrical connection of the group of MEMS units with a first electrode and a second electrode, which is more flexible to use.

[0140] The present disclosure provides a MEMS element and a manufacturing method thereof, which has the following beneficial effects compared with the prior art:

[0141] First, the MEMS element disclosed in the present invention can not only complete the circuit connection between each MEMS unit through the routing layer, but also does not need to additionally design RDL or apply other lead methods in actual application, thereby reducing the use cost of customers and avoiding the possibility of additional introduction of ESR or ESL; at the same time, the routing layer can also complete the circuit connection between the first electrode and the second electrode and the MEMS unit, which is conducive to the arrangement of different numbers of electrodes, is more flexible in use, and provides convenience for customer applications;

[0142] Second, based on the manufacturing method disclosed in the present invention, when manufacturing MEMS components of different specifications that can be obtained by arranging and combining a number of MEMS units, only a small number of additional mask plates need to be designed, and the wafers on which the MEMS units have been manufactured need to be processed accordingly. Since the manufacturing processes of the MEMS capacitor units in the early and middle stages are exactly the same, no additional development is required, which can greatly reduce the R&D costs and R&D cycle.

[0143] It is to be understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present disclosure, but the present disclosure is not limited thereto. For those of ordinary skill in the art, various modifications and improvements can be made without departing from the spirit and substance of the present disclosure, and these modifications and improvements are also considered to be within the scope of protection of the present disclosure.

Claims

1. A method for manufacturing a MEMS element, characterized in that: The production method comprises: Based on a set of mask plates, a plurality of MEMS units are formed on one or more wafers, which are densely arranged, mutually insulated and connected through a substrate; the plurality of MEMS units are adjacent to each other through scribe grooves, and the MEMS units have a first terminal and a second terminal exposed on the surface of the MEMS unit; According to the required MEMS element size and specifications, a mask for making a wiring layer, and three masks for making a first dielectric layer, a first electrode connection through hole, and a second electrode connection through hole are designed, and the wafer with the MEMS unit made is processed, including: Forming a routing portion on the first terminal and the second terminal of one or more MEMS units through a mask of the routing layer, wherein the first terminal and the second terminal on the plurality of MEMS units are electrically connected through the routing portion; Forming a first dielectric layer on the wiring layer through a mask of the first dielectric layer, and opening one or more first electrode connection through holes and one or more second electrode connection through holes at intervals on the first dielectric layer through masks of the other two electrode connection through holes; One or more first electrodes are correspondingly formed in the one or more first electrode connecting through holes, and one or more second electrodes are correspondingly formed in the one or more second electrode connecting through holes.

2. The method according to claim 1, characterized in that: The wiring portion electrically connects the MEMS units through at least one connection mode of series connection, parallel connection and mixed connection.

3. A MEMS element, characterized in that: include: One or more MEMS units, a wiring layer arranged on the MEMS unit, and one or more first electrodes and one or more second electrodes insulated and arranged on a side of the wiring layer away from the MEMS unit, wherein the first electrodes and the second electrodes are arranged at intervals; wherein A plurality of the MEMS units are adjacent to each other through scribe grooves, and the MEMS unit has a first terminal and a second terminal exposed on a surface of the MEMS unit; A first terminal exposed on one side of one or more of the MEMS units is electrically connected to the one or more first electrodes through the wiring layer, a second terminal exposed on one side of one or more of the MEMS units is electrically connected to the one or more second electrodes through the wiring layer, and a plurality of the MEMS units are electrically connected through the wiring layer; wherein, The one or more MEMS units are formed based on a set of mask plates; The routing layer is a mask plate designed for making the routing layer according to the required MEMS element size and specifications. The routing portion is used to form routing parts on the first terminal and the second terminal of one or more MEMS units that have been formed, and the electrical connection of each MEMS unit is completed through the routing portion.

4. The MEMS element according to claim 3, characterized in that: The multiple MEMS units are electrically connected through the wiring layer in at least one of a series connection, a parallel connection and a mixed connection.

5. The MEMS element according to claim 4, characterized in that: The routing layer includes a first routing portion, a second routing portion and a third routing portion; wherein, The first terminal of one of the MEMS units is electrically connected to the first electrode through the first wiring portion, the second terminal of another MEMS unit is electrically connected to the second electrode through the second wiring portion, and the first terminals and second terminals of multiple MEMS units are connected in series through the third wiring portion.

6. The MEMS element according to claim 3, characterized in that: The routing layer includes a first routing portion and a second routing portion; The first terminals of the plurality of MEMS units are connected in parallel through the first wiring portion, and the first wiring portion is electrically connected to the first electrode; The second terminals of the plurality of MEMS units are connected in parallel via the second wiring portion, and the second wiring portion is electrically connected to the second electrode.

7. The MEMS element according to claim 3, characterized in that: The routing layer includes a first routing portion, a second routing portion and a third routing portion; The first terminals of at least two MEMS units among the plurality of MEMS units are electrically connected in parallel to the first electrode through the first wiring portion; The second terminals of at least two MEMS units among the plurality of MEMS units are electrically connected in parallel to the second electrode through the second wiring portion, and the first electrode, the at least two MEMS units and the second electrode form at least two parallel circuits; The MEMS units in at least one of the parallel circuits are electrically connected in series via the third wiring portion.

8. The MEMS element according to any one of claims 3 to 7, characterized in that: The number of the first electrode and the number of the second electrode are both one.

9. The MEMS element according to any one of claims 3 to 7, characterized in that: A first dielectric layer is also disposed on the wiring layer, and one or more first electrode connection through holes and one or more second electrode connection through holes are alternately disposed on the first dielectric layer; The one or more first electrodes and the one or more second electrodes are respectively disposed in the corresponding one or more first electrode connecting through holes and the one or more second electrode connecting through holes.

10. The MEMS element according to any one of claims 3 to 7, characterized in that: The MEMS unit is at least one of a MEMS capacitor unit, a MEMS resistor unit and a MEMS inductor unit.

11. The MEMS element according to claim 10, characterized in that: The MEMS capacitor unit includes one or more layers of first plates, one or more layers of second plates, one or more layers of second dielectric layers, a third dielectric layer, a first conductive portion, and a second conductive portion; wherein, The first electrode plate and the second electrode plate are alternately stacked, and the second dielectric layer is arranged between the first electrode plate and the second electrode plate, and the third dielectric layer is arranged on a side of the first electrode plate or the second electrode plate away from the second dielectric layer; The first conductive part is insulated from the second conductive part and is at least disposed in the third dielectric layer, one end of the first conductive part is electrically connected to the first electrode plate to form a first terminal, one end of the second conductive part is electrically connected to the second electrode plate to form a second terminal, and the other ends of the first conductive part and the second conductive part are both electrically connected to the routing layer.

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