A perturbed electromagnetic field magnetic filtering electric arc combined magnetic control sputtering coating system

Abstract

This invention provides a perturbed electromagnetic field magnetic filtering arc composite magnetron sputtering coating system, relating to the field of vacuum coating technology. It includes: a vacuum chamber, a pumping device, a gas supply device, a magnetic filter pipe, an arc target, and a magnetron sputtering target. The vacuum chamber accommodates the workpiece and provides a coating environment. The pumping device is communicatively connected to the vacuum chamber and is used to extract gas from the vacuum chamber to control the vacuum level. The gas supply device supplies gas into the vacuum chamber. The first end of the magnetic filter pipe is connected to the vacuum chamber, and the second end extends away from the vacuum chamber. Multiple sets of magnetic filter coils are wound around the pipe, arranged sequentially along the direction of the magnetic filter pipe's extension. The magnetic filter coils are powered by a pulsed power supply. The arc target evaporates and ionizes the material, and the magnetron sputtering target is used to deposit a thin film on the sputtering target. The solution provided by this invention can improve coating quality.

Description

Technical Field

[0001] This invention relates to the field of vacuum coating technology, and in particular to a perturbed electromagnetic field magnetic filtering arc composite magnetron sputtering coating system. Background Technology

[0002] Vacuum coating is an important aspect of vacuum applications. It is a new process for thin film preparation based on vacuum technology, utilizing physical or chemical methods, and incorporating a series of new technologies such as electron beams, molecular beams, ion beams, plasma beams, radio frequency, and magnetron sputtering, to provide a basis for scientific research and practical production.

[0003] Vacuum sputtering coating is a phenomenon in which charged particles (usually positive ions of inert gas) bombard the surface of a solid (referred to as a target material), causing atoms (or molecules) on the target material surface to escape from it.

[0004] Vacuum ion plating refers to a process in which a film material is evaporated or sputtered in a vacuum atmosphere using an evaporation source or sputtering target. Some of the evaporated or sputtered particles are ionized into metal ions in the gas discharge space, and these particles are deposited onto the substrate under the action of an electric field to form a thin film.

[0005] Achieving rapid and efficient fabrication of smooth, hard films with high adhesion, and improving the uniformity of deposition on surfaces with anisotropic spatial dimensions, has always been a key technical challenge hindering industry development. Although arc ion plating can achieve rapid and efficient deposition of hard films, the large droplets generated in the melting zone of the high-current region result in high film roughness, making it difficult to meet the requirements of high-precision tools, molds, and optical devices.

[0006] To address the aforementioned issues, patent ZL200720155522.4 provides an out-of-line-of-sight magnetically filtered metal vapor vacuum arc plasma deposition multilayer film coating machine. It includes at least two out-of-line-of-sight magnetically filtered metal vapor vacuum arc plasma deposition sources mounted at a certain angle on the same plane within a vacuum coating chamber. The coating workpiece stage can rotate flexibly to coordinate with the working state of the plasma deposition sources, and an appropriate negative bias voltage is applied to the workpiece stage. Different plasma sources operate sequentially or alternately to achieve multilayer coating. Patent ZL201310226754.4 achieves the removal of large particles and efficient plasma transmission within the magnetic filtration device by activating a multi-stage magnetic field straight tube magnetic filter; adjusting process parameters allows for the rapid preparation of thin films free of large particle defects. Patent ZL202210847487.1 provides a method to regularly adjust the magnetic field line deflection direction between the filter bend and the workpiece to be coated, thereby guiding the coating ions to undergo up-and-down scanning deposition, which not only expands the effective coating area but also improves the coating uniformity of the workpiece. Patent ZL201811502695.8 discloses an ultra-wide and uniform magnetic filtering system and a cylindrical arc target device. These patents address, to varying degrees, the problem of high film roughness in arc ion plating deposition. However, the results are not ideal. Summary of the Invention

[0007] The purpose of this invention is to provide a perturbation electromagnetic field magnetic filtering arc composite magnetron sputtering coating system to solve the problems existing in the prior art and improve the coating quality.

[0008] To achieve the above objectives, the present invention provides the following solution:

[0009] This invention provides a perturbed electromagnetic field magnetic filtering arc composite magnetron sputtering coating system for coating workpieces, comprising:

[0010] A vacuum chamber is used to contain workpieces and provide a coating environment.

[0011] A vacuum pumping device is connected in communication with the vacuum chamber and is used to extract gas from the vacuum chamber to control the vacuum level within the vacuum chamber.

[0012] A gas supply device for supplying gas into the vacuum chamber;

[0013] A magnetic filter pipe has a first end connected to the vacuum chamber and a second end extending away from the vacuum chamber. Multiple sets of magnetic filter coils are wound around the pipe. The multiple sets of magnetic filter coils are arranged sequentially along the direction of the magnetic filter pipe. The magnetic filter coils are powered by a pulse power supply.

[0014] An electric arc target, positioned near the second end of the magnetic filter pipe, is used for evaporation and ionization.

[0015] A magnetron sputtering target is provided, with one installed in the middle of the vacuum cavity and the other multiple installed at the edge of the vacuum cavity, serving as sputtering cathodes for depositing thin films on the sputtering target material.

[0016] Preferably, the magnetic filter coil assembly is positioned near the second end to generate a perturbed magnetic field within the vacuum cavity.

[0017] Preferably, the magnetic filter coil group is provided in three groups, and the three groups of magnetic filter coil groups are wound in sequence from the second end to the first end in a number of turns of 3:6:9 to form a segmented enhanced magnetic field.

[0018] Preferably, a planetary tooling turntable is provided inside the vacuum cavity. The planetary tooling turntable is used to support the workpiece to be coated and drive the workpiece to revolve and rotate. The planetary tooling turntable can be connected to a bias power supply to coat the workpiece. A central columnar magnetron sputtering target is provided in the middle of the planetary tooling turntable. As the magnetron sputtering target in the middle of the vacuum cavity, the target surface and magnetic field components of the central columnar magnetron sputtering target can rotate around their own axis. The material of the target surface of the central columnar magnetron sputtering target can be the same as or different from the material of the arc target surface. When a negative bias power supply is applied to the central columnar magnetron sputtering target, it can achieve thin film deposition through sputtering. When a positive voltage is applied to the central columnar magnetron sputtering target, it acts as an auxiliary anode to promote thin film preparation.

[0019] Preferably, the planetary tooling turntable is provided with multiple magnetron sputtering targets around its periphery, serving as magnetron sputtering targets at the edge of the vacuum cavity. The target surface and magnetic field components of the magnetron sputtering targets can rotate around their own axes. The material of the target surface of the magnetron sputtering targets can be the same as or different from that of the target surface of the arc target. When a negative bias power supply is applied to the magnetron sputtering targets, thin film deposition can be achieved through sputtering.

[0020] Preferably, the air extraction device is a vacuum pump.

[0021] Preferably, the vacuum pump is provided in multiple ways, namely two molecular pumps, one mechanical pump and one Roots pump; the top of the vacuum chamber is provided with two air extraction ports, and each of the two air extraction ports is provided with a molecular pump, and the two molecular pumps are connected to the mechanical pump and the Roots pump in sequence through pipes.

[0022] Preferably, an ion source or a planar magnetron sputtering target is provided on the side of the vacuum chamber away from the magnetic filter pipe.

[0023] Preferably, the vacuum chamber door of the vacuum chamber is a clamshell side-opening door.

[0024] Preferably, the arc target is an arc column target and / or a planar arc target.

[0025] The present invention achieves the following technical effects compared to the prior art:

[0026] First, the perturbation electromagnetic field magnetic filtering arc composite magnetron sputtering coating system provided by the present invention, through the design of the magnetic filtering magnetic field, utilizes pulse discharge to form a pulse magnetic field, thereby achieving plasma compression (current peak) and expansion (current is 0), so that the plasma generated by the arc continuously contracts and expands, thereby increasing the collision probability of ions, reducing droplet output, and improving deposition efficiency and quality.

[0027] Secondly, the magnetic filter coil assembly can generate a perturbed magnetic field within the vacuum chamber, enabling effective plasma cleaning of the substrate, removing surface oxides and contaminants. Furthermore, by perturbing the permanent magnetic field and electromagnetic field, it can achieve an arbitrary angular thickness difference of 3% in multilayer thin films. This is of great significance for achieving uniform deposition across the entire surface of the sample.

[0028] Third, the perturbation electromagnetic field magnetic filtering arc composite magnetron sputtering coating system provided by the present invention adds a central columnar magnetron sputtering target. The entire surface of the central columnar magnetron sputtering target is the target surface. When the workpiece rotates to face the central columnar magnetron sputtering target, one material is deposited, and when it rotates to face the arc target, another material is deposited. This realizes the self-assembly continuous deposition of thin films.

[0029] Fourth, the perturbation electromagnetic field magnetic filtering arc composite magnetron sputtering coating system provided by the present invention further improves the film deposition efficiency and quality by setting multiple magnetron sputtering targets at the inner edge of the vacuum cavity to deposit thin films on sputtering targets. Attached Figure Description

[0030] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0031] Figure 1 This is a schematic diagram of the structure of the perturbation electromagnetic field magnetic filtering arc composite magnetron sputtering coating system provided in an embodiment of the present invention;

[0032] Figure 2 This is a schematic diagram of the self-assembled multilayer thin film deposited in Example 1;

[0033] Figure 3 This is a schematic diagram of the sample coating in Example 2 placed at different positions and angles;

[0034] In the figure: 1-Vacuum chamber support; 2-Vacuum chamber door; 3-Vacuum chamber; 4-Magnetic filter coil assembly; 5-Magnetic filter pipe; 6-Planar arc target; 7-Arc column target; 8-Insertion valve; 9-Molecular pump; 10-Magnetron column target; 11-Central columnar magnetron sputtering target; 12-Vacuum pipe; 13-Ion source or planar magnetron sputtering target; 14-Roots pump; 15-Mechanical pump. Detailed Implementation

[0035] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0036] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0037] This invention provides a perturbation electromagnetic field magnetic filtering arc composite magnetron sputtering coating system for coating workpieces, such as... Figure 1 As shown, it includes:

[0038] Vacuum chamber 3 is used to contain the workpiece and provide a coating area;

[0039] A pumping device is connected in communication with the vacuum chamber 3 and is used to extract gas from the vacuum chamber 3 to control the vacuum level in the vacuum chamber 3.

[0040] A gas supply device for supplying gas into the vacuum chamber 3;

[0041] The magnetic filter pipe 5 has a first end connected to the vacuum chamber 3 and a second end extending away from the vacuum chamber 3. Multiple sets of magnetic filter coils 4 are wound around it. The multiple sets of magnetic filter coils 4 are arranged sequentially along the direction of extension of the magnetic filter pipe 5. The magnetic filter coils 4 are powered by a pulse power supply.

[0042] An electric arc target, positioned near the second end of the magnetic filter pipe 5, is used for evaporation and ionization.

[0043] The magnetron sputtering target is provided in multiple locations, with one installed in the middle of the vacuum chamber and the rest installed at the edge of the vacuum chamber, serving as sputtering cathodes for depositing thin films on the sputtering target material.

[0044] The vacuum chamber 3 is equipped with a planetary tooling turntable, which is used to carry the workpiece and drive it to revolve and rotate. The planetary tooling turntable can be connected to a bias power supply to coat the workpiece.

[0045] The perturbation electromagnetic field magnetic filtering arc composite magnetron sputtering coating system provided in this embodiment of the invention utilizes pulsed discharge to form a pulsed magnetic field, thereby compressing (current peak) and expanding (current zero) the plasma. This causes the plasma generated by the arc to continuously contract and expand, thereby increasing the collision probability of ions, reducing droplet output, and improving deposition efficiency and quality.

[0046] In some embodiments, the magnetic filter coil assembly 4 is positioned near the second end to generate a perturbed magnetic field within the vacuum cavity 3. The edge of the magnetic filter coil assembly 4 is preferably 70 mm from the vacuum cavity 3. The magnetic filter coil assembly 4 in this embodiment can generate a perturbed magnetic field within the vacuum cavity 3, achieving effective plasma cleaning of the substrate, removing surface oxides and contaminants, and achieving an arbitrary angular thickness difference of 3% in multilayer thin films through perturbed permanent magnetic and electromagnetic fields. This is significant for achieving uniform deposition across the entire surface of the sample.

[0047] Specifically, the magnetic filter coil group 4 consists of three groups, which are wound sequentially from the second end to the first end in a 3:6:9 ratio to form a segmented enhanced magnetic field. The magnetic field strength increases progressively from 20Gs, 40Gs, and 60Gs, and the pulse length of the pulse power supply is 20-100 microseconds with a duty cycle of 15%.

[0048] It is understood that in other embodiments of the present invention, the magnetic filter coil group 4 may also be configured as 4, 5, 6... groups.

[0049] In some embodiments, a central columnar magnetron sputtering target 11 is provided in the middle of the planetary tooling turntable. As the magnetron sputtering target in the middle of the vacuum cavity, the target surface and magnetic field components of the central columnar magnetron sputtering target 11 can rotate around their own axis. The material of the target surface of the central columnar magnetron sputtering target 11 can be the same as or different from the material of the arc target surface. When a negative bias power supply is applied to the central columnar magnetron sputtering target 11, it can achieve thin film deposition through sputtering. When a positive voltage is applied to the central columnar magnetron sputtering target 11, it acts as an auxiliary anode to promote thin film preparation.

[0050] In this embodiment of the invention, the central columnar magnetron sputtering target 11 can be used for magnetron sputtering deposition. Therefore, when magnetron sputtering and arc ion plating are performed simultaneously, one material is deposited when the workpiece rotates to face the central columnar magnetron sputtering target 11, and another material is deposited when it rotates to face the arc target. This achieves continuous deposition of the thin film through self-assembly.

[0051] Furthermore, the central columnar magnetron sputtering target 11 in this embodiment can also serve as an auxiliary anode to promote thin film preparation. Specifically, the auxiliary anode can absorb electrons generated during magnetron sputtering and arc ion plating, achieving electron and positive ion separation. Reasonable control of the electrical parameters of the auxiliary anode can effectively improve the ionization rate and increase the plasma density, thereby promoting thin film preparation.

[0052] In some embodiments, a plurality of magnetron sputtering targets 10 are arranged around the planetary tooling turntable as magnetron sputtering targets at the edge of the vacuum cavity. The target surface and magnetic field components of the magnetron sputtering target 10 can rotate around their own axis. The material of the target surface of the magnetron sputtering target 10 can be the same as or different from that of the target surface of the arc target. When a negative bias power supply is applied to the magnetron sputtering target 10, it can achieve thin film deposition through sputtering.

[0053] The embodiments of the present invention achieve multi-directional magnetron sputtering coating, thereby improving the coating effect. Furthermore, when the material of the magnetron target 10 is different from that of the arc target, self-assembled thin films of various materials can be formed.

[0054] In some embodiments, the evacuation device is a vacuum pump.

[0055] Specifically, there are multiple vacuum pumps, namely two molecular pumps 9, one mechanical pump 15, and one Roots pump 14; the top of the vacuum chamber 3 is provided with two air extraction ports, and each of the two air extraction ports is provided with a molecular pump 9. The two molecular pumps 9 are connected to the mechanical pump 15 and the Roots pump 14 in sequence through pipes.

[0056] The embodiments of the present invention can be used with different vacuum pumps to work according to different vacuum requirements.

[0057] In some embodiments, an ion source and / or a planar magnetron sputtering target 13 are provided on the side of the vacuum chamber 3 facing the magnetic filter pipe 5.

[0058] When a planar magnetron sputtering target is provided, the embodiments of the present invention can further improve the effect of magnetron sputtering coating and realize the preparation of thin films by sputtering more target materials together. When an ion source is provided, it can assist sputtering deposition or directly ionize carbon source gas for deposition.

[0059] In some embodiments, the vacuum chamber door 2 of the vacuum chamber 3 is a clamshell side-opening door.

[0060] In some embodiments, the arc target is an arc column target 7 and / or a planar arc target 6. It is understood that the embodiments of the present invention may set the arc column target 7 or the planar arc target 6 separately, or may set the arc column target 7 and the planar arc target 6 simultaneously. The target surface of the arc column target 7 and the magnetic field component can rotate around their own axis.

[0061] Example 1: Preparation of self-assembled multilayer thin films using the apparatus described in this invention.

[0062] (1) Installing the target: The central columnar magnetron sputtering target 11 is a graphite target; the arc column target 7 is a chromium target.

[0063] (2) Place the cleaned polished bearing steel sample on the planetary tooling turntable, set the planetary tooling turntable speed to 3 revolutions / minute, evacuate to 1.0E-4Pa, introduce Ar gas and maintain it at 0.4Pa.

[0064] (3) Turn on the arc target 7, set the current to 100A, that is, the magnetic field working target surface of the arc target 7 is reversed cavity, set the parameters of the pulse power supply of the magnetic filter coil group 4, and the magnetic field strength is set from 20GS.

[0065] The pulses are increased progressively to 40Gs and 60Gs. Specifically, the pulse power supply parameters for magnetic filter coil group 4 are set to a pulse length of 100 microseconds and a duty cycle of 15%.

[0066] (4) Simultaneously open the central columnar magnetron sputtering target to make it the magnetron anode. Neither the magnetic field nor the target surface rotates. The magnetic field is directly opposite the opening of the magnetic filter pipe, forming a closed magnetic field with the electromagnetic field. Adjust the holding current to 120A, the length to 100 microseconds, the duty cycle to 15%, and the asynchronous phase difference of the coil pulse power supply to 23%.

[0067] (5) At the same time, connect the workpiece to the bias power supply, set the pulse length to 20 microseconds, the duty cycle to 55%, and the negative bias voltage to 450V, and perform plasma cleaning on the workpiece for about 30 minutes.

[0068] (6) Reverse the magnetic field of the arc target 7 so that the sputtering working surface faces the cavity, keep the current of the magnetic filter coil group 4 unchanged, adjust the tooling bias voltage to negative 50V, keep other parameters unchanged, and deposit the chromium bonding layer for 15 minutes.

[0069] (7) Turn off the anode power supply of the central columnar magnetron sputtering target, switch to the sputtering power supply, set the current to 16A, the pulse length to 20 microseconds, the duty cycle to 55%, and the magnetic field to rotate at a speed of 5 revolutions per minute. At this time, when the sample is facing the arc target, a chromium-carbon film is deposited, and when it is away from the arc target, a carbon-based film is deposited, thereby forming a self-assembled film.

[0070] (8) The thickness and other properties of the multi-layer structure can be adjusted by the target current and the revolution speed. Figure 2 The self-assembled multilayer thin film deposited in Example 1 is presented. The adhesion strength was as high as 60 N as measured by a scratch instrument.

[0071] Example 2: A thin film with uniform thickness at any angle was prepared using the equipment described in this invention.

[0072] (1) Installing target materials: The central columnar magnetron sputtering target 11 is a titanium target, the arc column target 7 is a chromium target, and the four sets of magnetron column targets 10 are all graphite targets.

[0073] (2) Place the cleaned polished bearing steel sample on the planetary tooling turntable, with its deposition surface at 0°, 45° and 90° to the vertical plane respectively. The two sets of samples may not be placed at the bottom or middle of the tooling. Evacuate to 1.0E-4Pa, purge with Ar gas and keep at 0.4Pa.

[0074] (3) Turn on the arc target 7, set the current to 100A, reverse the magnetic field surface of the arc target 7, set the parameters of the pulse power supply of the magnetic filter coil group, and gradually increase the magnetic field strength from 20GS, 40Gs, and 60Gs. Set the pulse power supply parameters of the magnetic filter coil group 4 to 100 microseconds pulse length, 15% duty cycle, and 60Gs magnetic field strength.

[0075] (4) Simultaneously open the central magneto-anode. Neither the magnetic field nor the target rotates. The magnetic field is directly opposite the opening of the magnetic filter arc, forming a closed magnetic field with the electromagnetic field. Adjust the holding current to 120A, the length to 100 microseconds, the duty cycle to 15%, and the asynchronous phase difference of the coil pulse power supply to 23%.

[0076] (5) At the same time, connect the workpiece to the bias power supply, set the pulse length to 20 microseconds, the duty cycle to 55%, and the negative bias voltage to 450V, and perform plasma cleaning on the sample for about 30 minutes.

[0077] (6) Reverse the magnetic field of the arc target 7 so that the sputtering working surface faces the cavity. The pulse power supply parameters of the coil on the magnetic filter pipe 5 are 20 microseconds and the duty cycle is 15%. The magnetic field strength is 100 Gs.

[0078] (7) Adjust the tool bias to -50V, keep other parameters unchanged, and deposit the chromium bonding layer for 15 minutes.

[0079] (8) Turn off the anode power supply of the central columnar magnetron sputtering target 11, switch to the sputtering power supply, set the current to 10A, the pulse length to 20 microseconds, the duty cycle to 55%, the magnetic field to rotate, and the speed to 5 revolutions / minute.

[0080] (9) Turn on the magnetically controlled target 10, set the current to 12A, pulse length to 20 microseconds, duty cycle to 55%, target surface, and speed to 5 revolutions / minute.

[0081] (10) At this time, when the sample passes through the arc target, a chromium-titanium-carbon thin film is deposited, and when it moves away from the arc target, a carbon-titanium-based thin film is deposited, thereby forming a self-assembled multilayer thin film.

[0082] (11) After 1 hour of deposition, turn off the machine and remove the sample. Figure 3 The sample thicknesses of Example 2 placed at different positions and angles are given. Calculations show that the sample thickness difference is <3%. Scratch testing shows an adhesion strength as high as 90N.

[0083] Any aspects not covered in this invention are applicable to existing technologies.

[0084] Specific examples have been used to illustrate the principles and implementation methods of this invention. The descriptions of the above embodiments are only for the purpose of helping to understand the method and core ideas of this invention. Furthermore, those skilled in the art will recognize that, based on the ideas of this invention, there will be changes in the specific implementation methods and application scope. Therefore, the content of this specification should not be construed as a limitation of this invention.

Claims

1. A perturbed electromagnetic field magnetic filtering arc composite magnetron sputtering coating system for coating workpieces, characterized in that: include: A vacuum chamber is used to contain workpieces and provide a coating environment. A vacuum pumping device is connected in communication with the vacuum chamber and is used to extract gas from the vacuum chamber to control the vacuum level within the vacuum chamber. A gas supply device for supplying gas into the vacuum chamber; A magnetic filter pipe has a first end connected to the vacuum chamber and a second end extending away from the vacuum chamber. Multiple sets of magnetic filter coils are wound around the pipe. The multiple sets of magnetic filter coils are arranged sequentially along the direction of the magnetic filter pipe. The magnetic filter coils are powered by a pulse power supply to achieve the compression and expansion of the plasma, thereby increasing the collision probability of ions and reducing droplet output. An electric arc target, positioned near the second end of the magnetic filter pipe, is used for evaporation and ionization. Multiple magnetron sputtering targets are provided, one of which is installed in the middle of the vacuum cavity, and the rest are installed at the edge of the vacuum cavity, serving as sputtering cathodes for depositing thin films on the target material. A magnetic filter coil group is positioned near the second end to generate a perturbed magnetic field within the vacuum cavity. Three magnetic filter coil groups are provided, and the three groups are wound sequentially from the second end to the first end in a 3:6:9 turns ratio to form a segmented enhanced magnetic field. The edge of the magnetic filter coil group is 70 mm from the vacuum cavity, and the pulse length of the pulse power supply is 20-100 microseconds with a duty cycle of 15%.

2. The perturbed electromagnetic field magnetic filtering arc composite magnetron sputtering coating system according to claim 1, characterized in that: A planetary tooling turntable is installed inside the vacuum chamber. The planetary tooling turntable is used to carry the workpiece and drive the workpiece to revolve and rotate. The planetary tooling turntable can be connected to a bias power supply to perform film deposition on the workpiece. A central columnar magnetron sputtering target is set in the middle of the planetary tooling turntable. As the magnetron sputtering target in the middle of the vacuum chamber, the target surface and magnetic field components of the central columnar magnetron sputtering target can rotate around their own axis. The material of the target surface of the central columnar magnetron sputtering target is the same as or different from that of the arc target surface. When a negative bias power supply is applied to the central columnar magnetron sputtering target, it achieves thin film deposition through sputtering the target material. When a positive voltage is applied to the central columnar magnetron sputtering target, it acts as an auxiliary anode to promote thin film preparation.

3. The perturbed electromagnetic field magnetic filtering arc composite magnetron sputtering coating system according to claim 2, characterized in that: The planetary tooling turntable is provided with multiple magnetron sputtering targets around its periphery, which serve as magnetron sputtering targets at the edge of the vacuum cavity. The target surface and magnetic field components of the magnetron sputtering targets can rotate around their own axes. The material of the target surface of the magnetron sputtering targets may be the same as or different from that of the target surface of the arc target. When a negative bias power supply is applied to the magnetron sputtering targets, thin film deposition is achieved through sputtering.

4. The perturbed electromagnetic field magnetic filtering arc composite magnetron sputtering coating system according to claim 1, characterized in that: The air extraction device is a vacuum pump.

5. The perturbed electromagnetic field magnetic filtering arc composite magnetron sputtering coating system according to claim 4, characterized in that: The vacuum pump is provided in multiple ways, namely two molecular pumps, one mechanical pump and one Roots pump; the top of the vacuum chamber is provided with two air extraction ports, and each of the two air extraction ports is provided with a molecular pump. The two molecular pumps are connected to the mechanical pump and the Roots pump in sequence through pipes.

6. The perturbed electromagnetic field magnetic filtering arc composite magnetron sputtering coating system according to claim 1, characterized in that: An ion source or a planar magnetron sputtering target is provided on the side of the vacuum chamber away from the magnetic filter pipe.

7. The perturbed electromagnetic field magnetic filtering arc composite magnetron sputtering coating system according to claim 1, characterized in that: The vacuum chamber door of the vacuum cavity is a clamshell side-opening door.

8. The perturbed electromagnetic field magnetic filtering arc composite magnetron sputtering coating system according to claim 1, characterized in that: The arc target is an arc column target and / or a planar arc target.

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